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AU2001276989A1 - Thin-film metallic oxide structure and process for fabricating same - Google Patents

Thin-film metallic oxide structure and process for fabricating same

Info

Publication number
AU2001276989A1
AU2001276989A1 AU2001276989A AU7698901A AU2001276989A1 AU 2001276989 A1 AU2001276989 A1 AU 2001276989A1 AU 2001276989 A AU2001276989 A AU 2001276989A AU 7698901 A AU7698901 A AU 7698901A AU 2001276989 A1 AU2001276989 A1 AU 2001276989A1
Authority
AU
Australia
Prior art keywords
thin
metallic oxide
oxide structure
fabricating same
film metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001276989A
Inventor
Ravindranath Droopad
Kurt Eisenbeiser
Jeffrey M. Finder
William Jay Ooms
Jamal Ramdani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2001276989A1 publication Critical patent/AU2001276989A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • H10P14/69398—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth
    • H10P14/6329—
    • H10P14/6332—
    • H10P14/6339—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H10P14/69215—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
AU2001276989A 2000-07-24 2001-07-19 Thin-film metallic oxide structure and process for fabricating same Abandoned AU2001276989A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US62487700A 2000-07-24 2000-07-24
US09624877 2000-07-24
PCT/US2001/022679 WO2002009159A2 (en) 2000-07-24 2001-07-19 Thin-film metallic oxide structure and process for fabricating same

Publications (1)

Publication Number Publication Date
AU2001276989A1 true AU2001276989A1 (en) 2002-02-05

Family

ID=24503701

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001276989A Abandoned AU2001276989A1 (en) 2000-07-24 2001-07-19 Thin-film metallic oxide structure and process for fabricating same

Country Status (4)

Country Link
JP (1) JP2004505444A (en)
CN (1) CN1449458A (en)
AU (1) AU2001276989A1 (en)
WO (1) WO2002009159A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6916717B2 (en) * 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US7072093B2 (en) 2003-04-30 2006-07-04 Hewlett-Packard Development Company, L.P. Optical interference pixel display with charge control
DE102004058958B4 (en) * 2004-12-08 2006-10-26 Forschungszentrum Jülich GmbH Semiconductor device made of a high band gap material and dielectric constant
JP4678410B2 (en) * 2008-02-12 2011-04-27 セイコーエプソン株式会社 Head manufacturing method and printer manufacturing method
CN101789260B (en) * 2010-01-19 2013-03-20 湘潭大学 Epitaxial strain ferroelectric film for ferroelectric memory and method for regulating and controlling strain thereof
CN101913860B (en) * 2010-08-19 2012-11-21 西北工业大学 Bismuth titanate based piezoelectric ceramic with high curie temperature and preparation method thereof
JP5716407B2 (en) * 2011-01-17 2015-05-13 株式会社リコー Field effect transistor, display element, image display device, and system
US8796121B1 (en) * 2013-11-19 2014-08-05 Translucent, Inc. Stress mitigating amorphous SiO2 interlayer
CN106277041B (en) * 2016-11-14 2018-01-12 东北大学 A kind of preparation method of lanthanum gallate solid solution barium titanate amorphous
US10697090B2 (en) * 2017-06-23 2020-06-30 Panasonic Intellectual Property Management Co., Ltd. Thin-film structural body and method for fabricating thereof
CN112537799B (en) * 2019-09-20 2021-09-28 中国科学院物理研究所 Method for regulating oxygen vacancy sequence phase of perovskite phase cobalt oxide material
CN111926295B (en) * 2020-09-01 2022-08-09 深圳大学 Huge tetragonal phase PbTiO 3 Method for producing thin film
CN115418718A (en) * 2022-09-07 2022-12-02 武汉大学 Product based on two-dimensional spinel type ferrite film and preparation method and application thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450575A (en) * 1987-08-21 1989-02-27 Nec Corp Substrate for electronic device
US5270298A (en) * 1992-03-05 1993-12-14 Bell Communications Research, Inc. Cubic metal oxide thin film epitaxially grown on silicon
DE69325614T2 (en) * 1992-05-01 2000-01-13 Texas Instruments Inc Oxides of high dielectric constant containing Pb / Bi using perovskites as a buffer layer which do not contain Pb / Bi
US5650362A (en) * 1993-11-04 1997-07-22 Fuji Xerox Co. Oriented conductive film and process for preparing the same
US5830270A (en) * 1996-08-05 1998-11-03 Lockheed Martin Energy Systems, Inc. CaTiO3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class

Also Published As

Publication number Publication date
JP2004505444A (en) 2004-02-19
WO2002009159A3 (en) 2002-04-25
WO2002009159A2 (en) 2002-01-31
CN1449458A (en) 2003-10-15

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