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AU2001276968A1 - Semiconductor structure for use with high-frequency signals - Google Patents

Semiconductor structure for use with high-frequency signals

Info

Publication number
AU2001276968A1
AU2001276968A1 AU2001276968A AU7696801A AU2001276968A1 AU 2001276968 A1 AU2001276968 A1 AU 2001276968A1 AU 2001276968 A AU2001276968 A AU 2001276968A AU 7696801 A AU7696801 A AU 7696801A AU 2001276968 A1 AU2001276968 A1 AU 2001276968A1
Authority
AU
Australia
Prior art keywords
semiconductor structure
frequency signals
signals
frequency
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001276968A
Inventor
Ravindranath Droopad
Kurt Eisenbeiser
Nada El-Zein
Jamal Ramdani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2001276968A1 publication Critical patent/AU2001276968A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H10P14/2905—
    • H10P14/3202—
    • H10P14/3238—
    • H10P14/3251—
    • H10P14/3402—
    • H10P14/6544—
    • H10P14/69215—
    • H10P14/6939—
    • H10P14/69398—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/90—Bulk effect device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Memories (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
AU2001276968A 2000-07-24 2001-07-18 Semiconductor structure for use with high-frequency signals Abandoned AU2001276968A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/624,296 2000-07-24
US09/624,296 US6590236B1 (en) 2000-07-24 2000-07-24 Semiconductor structure for use with high-frequency signals
PCT/US2001/022573 WO2002009150A2 (en) 2000-07-24 2001-07-18 Semiconductor structure for use with high-frequency signals

Publications (1)

Publication Number Publication Date
AU2001276968A1 true AU2001276968A1 (en) 2002-02-05

Family

ID=24501428

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001276968A Abandoned AU2001276968A1 (en) 2000-07-24 2001-07-18 Semiconductor structure for use with high-frequency signals

Country Status (4)

Country Link
US (1) US6590236B1 (en)
AU (1) AU2001276968A1 (en)
TW (1) TW523790B (en)
WO (1) WO2002009150A2 (en)

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