[go: up one dir, main page]

AU2001272846A1 - Method for vapour deposition of a film onto a substrate - Google Patents

Method for vapour deposition of a film onto a substrate

Info

Publication number
AU2001272846A1
AU2001272846A1 AU2001272846A AU7284601A AU2001272846A1 AU 2001272846 A1 AU2001272846 A1 AU 2001272846A1 AU 2001272846 A AU2001272846 A AU 2001272846A AU 7284601 A AU7284601 A AU 7284601A AU 2001272846 A1 AU2001272846 A1 AU 2001272846A1
Authority
AU
Australia
Prior art keywords
substrate
vapour deposition
film onto
onto
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001272846A
Inventor
Margreet Albertine Anne-Marie Van Wijck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASM International NV
Original Assignee
ASM International NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASM International NV filed Critical ASM International NV
Publication of AU2001272846A1 publication Critical patent/AU2001272846A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
AU2001272846A 2000-07-07 2001-07-09 Method for vapour deposition of a film onto a substrate Abandoned AU2001272846A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09611602 2000-07-07
US09/611,602 US6592942B1 (en) 2000-07-07 2000-07-07 Method for vapour deposition of a film onto a substrate
PCT/NL2001/000520 WO2002008485A2 (en) 2000-07-07 2001-07-09 Method for vapour deposition of a film onto a substrate

Publications (1)

Publication Number Publication Date
AU2001272846A1 true AU2001272846A1 (en) 2002-02-05

Family

ID=24449678

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001272846A Abandoned AU2001272846A1 (en) 2000-07-07 2001-07-09 Method for vapour deposition of a film onto a substrate

Country Status (7)

Country Link
US (1) US6592942B1 (en)
EP (1) EP1299572B1 (en)
JP (1) JP5185486B2 (en)
KR (1) KR100790416B1 (en)
AU (1) AU2001272846A1 (en)
DE (1) DE60104426T2 (en)
WO (1) WO2002008485A2 (en)

Families Citing this family (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7554829B2 (en) 1999-07-30 2009-06-30 Micron Technology, Inc. Transmission lines for CMOS integrated circuits
US6319766B1 (en) 2000-02-22 2001-11-20 Applied Materials, Inc. Method of tantalum nitride deposition by tantalum oxide densification
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US6852167B2 (en) 2001-03-01 2005-02-08 Micron Technology, Inc. Methods, systems, and apparatus for uniform chemical-vapor depositions
US20030012875A1 (en) * 2001-07-10 2003-01-16 Shreyas Kher CVD BST film composition and property control with thickness below 200 A for DRAM capacitor application with size at 0.1mum or below
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
JP2005504885A (en) 2001-07-25 2005-02-17 アプライド　マテリアルズ　インコーポレイテッド Barrier formation using a novel sputter deposition method
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US7204886B2 (en) 2002-11-14 2007-04-17 Applied Materials, Inc. Apparatus and method for hybrid chemical processing
US7081271B2 (en) 2001-12-07 2006-07-25 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
US6900122B2 (en) 2001-12-20 2005-05-31 Micron Technology, Inc. Low-temperature grown high-quality ultra-thin praseodymium gate dielectrics
US6939801B2 (en) 2001-12-21 2005-09-06 Applied Materials, Inc. Selective deposition of a barrier layer on a dielectric material
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
DE10208450B4 (en) * 2002-02-27 2004-09-16 Infineon Technologies Ag Process for the deposition of thin layers by means of ALD / CVD processes in connection with fast thermal processes
US6972267B2 (en) 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US7220312B2 (en) * 2002-03-13 2007-05-22 Micron Technology, Inc. Methods for treating semiconductor substrates
US6846516B2 (en) 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US7279432B2 (en) 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US6932871B2 (en) * 2002-04-16 2005-08-23 Applied Materials, Inc. Multi-station deposition apparatus and method
JP3983091B2 (en) * 2002-04-24 2007-09-26 Ｎｅｃエレクトロニクス株式会社 Vapor phase growth method of oxide dielectric film
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US7589029B2 (en) 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US7041335B2 (en) 2002-06-04 2006-05-09 Applied Materials, Inc. Titanium tantalum nitride silicide layer
US7135421B2 (en) 2002-06-05 2006-11-14 Micron Technology, Inc. Atomic layer-deposited hafnium aluminum oxide
US7205218B2 (en) * 2002-06-05 2007-04-17 Micron Technology, Inc. Method including forming gate dielectrics having multiple lanthanide oxide layers
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US6838125B2 (en) 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
US7186385B2 (en) 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US6955211B2 (en) 2002-07-17 2005-10-18 Applied Materials, Inc. Method and apparatus for gas temperature control in a semiconductor processing system
US7066194B2 (en) 2002-07-19 2006-06-27 Applied Materials, Inc. Valve design and configuration for fast delivery system
US6915592B2 (en) 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
US6921702B2 (en) * 2002-07-30 2005-07-26 Micron Technology Inc. Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
US7084078B2 (en) 2002-08-29 2006-08-01 Micron Technology, Inc. Atomic layer deposited lanthanide doped TiOx dielectric films
US6905737B2 (en) 2002-10-11 2005-06-14 Applied Materials, Inc. Method of delivering activated species for rapid cyclical deposition
US7244683B2 (en) 2003-01-07 2007-07-17 Applied Materials, Inc. Integration of ALD/CVD barriers with porous low k materials
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US6753248B1 (en) 2003-01-27 2004-06-22 Applied Materials, Inc. Post metal barrier/adhesion film
US7192892B2 (en) 2003-03-04 2007-03-20 Micron Technology, Inc. Atomic layer deposited dielectric layers
US7238595B2 (en) * 2003-03-13 2007-07-03 Asm America, Inc. Epitaxial semiconductor deposition methods and structures
US7682947B2 (en) * 2003-03-13 2010-03-23 Asm America, Inc. Epitaxial semiconductor deposition methods and structures
JP4009550B2 (en) * 2003-03-27 2007-11-14 エルピーダメモリ株式会社 Method for forming metal oxide film
US20050070126A1 (en) * 2003-04-21 2005-03-31 Yoshihide Senzaki System and method for forming multi-component dielectric films
US7183186B2 (en) 2003-04-22 2007-02-27 Micro Technology, Inc. Atomic layer deposited ZrTiO4 films
DE10319540A1 (en) * 2003-04-30 2004-11-25 Infineon Technologies Ag Process for ALD coating of substrates and a device suitable for carrying out the process
JP2007523994A (en) 2003-06-18 2007-08-23 アプライド　マテリアルズ　インコーポレイテッド Atomic layer deposition of barrier materials
US7192824B2 (en) 2003-06-24 2007-03-20 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectric layers
US6818517B1 (en) 2003-08-29 2004-11-16 Asm International N.V. Methods of depositing two or more layers on a substrate in situ
EP1763893A2 (en) * 2004-02-27 2007-03-21 ASM America, Inc. Germanium deposition
US8323754B2 (en) 2004-05-21 2012-12-04 Applied Materials, Inc. Stabilization of high-k dielectric materials
KR100614801B1 (en) * 2004-07-05 2006-08-22 삼성전자주식회사 Film Formation Method of Semiconductor Device
US7241686B2 (en) 2004-07-20 2007-07-10 Applied Materials, Inc. Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
US7081421B2 (en) 2004-08-26 2006-07-25 Micron Technology, Inc. Lanthanide oxide dielectric layer
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
US7494939B2 (en) 2004-08-31 2009-02-24 Micron Technology, Inc. Methods for forming a lanthanum-metal oxide dielectric layer
US7429402B2 (en) 2004-12-10 2008-09-30 Applied Materials, Inc. Ruthenium as an underlayer for tungsten film deposition
US7235501B2 (en) 2004-12-13 2007-06-26 Micron Technology, Inc. Lanthanum hafnium oxide dielectrics
US7560395B2 (en) 2005-01-05 2009-07-14 Micron Technology, Inc. Atomic layer deposited hafnium tantalum oxide dielectrics
US7508648B2 (en) 2005-02-08 2009-03-24 Micron Technology, Inc. Atomic layer deposition of Dy doped HfO2 films as gate dielectrics
US7498247B2 (en) * 2005-02-23 2009-03-03 Micron Technology, Inc. Atomic layer deposition of Hf3N4/HfO2 films as gate dielectrics
US7687409B2 (en) 2005-03-29 2010-03-30 Micron Technology, Inc. Atomic layer deposited titanium silicon oxide films
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7390756B2 (en) 2005-04-28 2008-06-24 Micron Technology, Inc. Atomic layer deposited zirconium silicon oxide films
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US8110469B2 (en) 2005-08-30 2012-02-07 Micron Technology, Inc. Graded dielectric layers
KR100642763B1 (en) * 2005-09-06 2006-11-10 삼성전자주식회사 TiN film structure of semiconductor device, manufacturing method thereof, semiconductor device adopting TiN film structure and method thereof
FR2890982B1 (en) * 2005-09-21 2008-05-02 St Microelectronics Sa METHOD FOR PRODUCING A DIELECTRIC LAYER ON A CARRIER MATERIAL AND AN INTEGRATED CIRCUIT COMPRISING A CAPACITOR INCORPORATING A DIELECTRIC LAYER
TWI332532B (en) 2005-11-04 2010-11-01 Applied Materials Inc Apparatus and process for plasma-enhanced atomic layer deposition
US7648853B2 (en) 2006-07-11 2010-01-19 Asm America, Inc. Dual channel heterostructure
US7585762B2 (en) 2007-09-25 2009-09-08 Applied Materials, Inc. Vapor deposition processes for tantalum carbide nitride materials
US7816278B2 (en) * 2008-03-28 2010-10-19 Tokyo Electron Limited In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition
US20100062149A1 (en) 2008-09-08 2010-03-11 Applied Materials, Inc. Method for tuning a deposition rate during an atomic layer deposition process
US8524322B2 (en) 2010-12-28 2013-09-03 Asm International N.V. Combination CVD/ALD method and source
US9790594B2 (en) 2010-12-28 2017-10-17 Asm Ip Holding B.V. Combination CVD/ALD method, source and pulse profile modification
US9127345B2 (en) 2012-03-06 2015-09-08 Asm America, Inc. Methods for depositing an epitaxial silicon germanium layer having a germanium to silicon ratio greater than 1:1 using silylgermane and a diluent
US9171715B2 (en) 2012-09-05 2015-10-27 Asm Ip Holding B.V. Atomic layer deposition of GeO2
US9218963B2 (en) 2013-12-19 2015-12-22 Asm Ip Holding B.V. Cyclical deposition of germanium
CN118858810B (en) * 2024-07-16 2025-09-19 华中科技大学 Precursor pulse time measurement system, measurement method and measurement device thereof and atomic layer deposition system

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE393967B (en) * 1974-11-29 1977-05-31 Sateko Oy PROCEDURE AND PERFORMANCE OF LAYING BETWEEN THE STORAGE IN A LABOR PACKAGE
NL8200753A (en) 1982-02-24 1983-09-16 Integrated Automation METHOD AND APPARATUS FOR APPLYING A COATING TO A SUBSTRATE OR TAPE.
US4420385A (en) * 1983-04-15 1983-12-13 Gryphon Products Apparatus and process for sputter deposition of reacted thin films
US4798165A (en) 1985-10-07 1989-01-17 Epsilon Apparatus for chemical vapor deposition using an axially symmetric gas flow
US4840921A (en) * 1987-07-01 1989-06-20 Nec Corporation Process for the growth of III-V group compound semiconductor crystal on a Si substrate
JPS6437832A (en) * 1987-08-04 1989-02-08 Fujitsu Ltd Method of growing compound semiconductor crystal
DE3885833T2 (en) 1987-09-22 1994-03-24 Nippon Electric Co Chemical vapor deposition apparatus for the production of high quality epitaxial layers with a uniform density.
US5166092A (en) * 1988-01-28 1992-11-24 Fujitsu Limited Method of growing compound semiconductor epitaxial layer by atomic layer epitaxy
US5130269A (en) * 1988-04-27 1992-07-14 Fujitsu Limited Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same
US4931132A (en) * 1988-10-07 1990-06-05 Bell Communications Research, Inc. Optical control of deposition of crystal monolayers
JPH0824191B2 (en) * 1989-03-17 1996-03-06 富士通株式会社 Thin film transistor
JPH0547666A (en) * 1991-08-13 1993-02-26 Fujitsu Ltd Vapor growth apparatus
US5788425A (en) 1992-07-15 1998-08-04 Imation Corp. Flexible system for handling articles
JPH06177381A (en) * 1992-12-03 1994-06-24 Fujitsu Ltd Thin film transistor matrix and manufacturing method thereof
US5443647A (en) * 1993-04-28 1995-08-22 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for depositing a refractory thin film by chemical vapor deposition
US5420072A (en) * 1994-02-04 1995-05-30 Motorola, Inc. Method for forming a conductive interconnect in an integrated circuit
US5841490A (en) * 1994-10-31 1998-11-24 Kyocera Corporation Liquid crystal display device and its fabricating method
FI97731C (en) 1994-11-28 1997-02-10 Mikrokemia Oy Method and apparatus for making thin films
FR2727693A1 (en) 1994-12-06 1996-06-07 Centre Nat Rech Scient REACTOR FOR THE DEPOSITION OF THIN LAYERS IN STEAM PHASE (CVD)
US5772770A (en) 1995-01-27 1998-06-30 Kokusai Electric Co, Ltd. Substrate processing apparatus
US5708559A (en) * 1995-10-27 1998-01-13 International Business Machines Corporation Precision analog metal-metal capacitor
NL1003538C2 (en) 1996-07-08 1998-01-12 Advanced Semiconductor Mat Method and device for contactless treatment of a disc-shaped semiconductor substrate.
US5719417A (en) * 1996-11-27 1998-02-17 Advanced Technology Materials, Inc. Ferroelectric integrated circuit structure
JPH10239698A (en) * 1997-02-25 1998-09-11 Sharp Corp Liquid crystal display
US5879459A (en) * 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
US5851849A (en) * 1997-05-22 1998-12-22 Lucent Technologies Inc. Process for passivating semiconductor laser structures with severe steps in surface topography
KR100269306B1 (en) * 1997-07-31 2000-10-16 윤종용 Integrate circuit device having buffer layer containing metal oxide stabilized by low temperature treatment and fabricating method thereof
US6271129B1 (en) 1997-12-03 2001-08-07 Applied Materials, Inc. Method for forming a gap filling refractory metal layer having reduced stress
KR100287180B1 (en) * 1998-09-17 2001-04-16 윤종용 Method for manufacturing semiconductor device including metal interconnection formed using interface control layer
US6124158A (en) * 1999-06-08 2000-09-26 Lucent Technologies Inc. Method of reducing carbon contamination of a thin dielectric film by using gaseous organic precursors, inert gas, and ozone to react with carbon contaminants
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer

Also Published As

Publication number Publication date
DE60104426D1 (en) 2004-08-26
DE60104426T2 (en) 2005-07-21
EP1299572A2 (en) 2003-04-09
JP2004504496A (en) 2004-02-12
WO2002008485A3 (en) 2002-04-25
KR100790416B1 (en) 2008-01-02
JP5185486B2 (en) 2013-04-17
WO2002008485A2 (en) 2002-01-31
US6592942B1 (en) 2003-07-15
KR20030017612A (en) 2003-03-03
EP1299572B1 (en) 2004-07-21

Similar Documents

Publication Publication Date Title
AU2001272846A1 (en) Method for vapour deposition of a film onto a substrate
AU2001279847A1 (en) Method of growing a thin film onto a substrate
AU4168699A (en) Method of organic film deposition
GB2355727B (en) Method of forming thin film using atomic layer deposition
AU2003224977A1 (en) System for depositing a film onto a substrate using a low vapor pressure gas precursor
AU6336700A (en) Apparatus for atomic layer chemical vapor deposition
AU2001246414A1 (en) Process for coating a surface
AU1208201A (en) Method for depositing nanolaminate thin films on sensitive surfaces
AU2002245433A1 (en) Method for uniformly coating a substrate
AU2001285235A1 (en) Source reagent compositions and method for forming metal films on a substrate bychemical vapor deposition
AU2002252049A1 (en) Method of uniformly coating a substrate
AU1208401A (en) Method for application of a fluid on a substrate formed as film or web
AU2003237399A1 (en) Methods for transferring a layer onto a substrate
AU2002356649A1 (en) Method for depositing a polymer onto a surface
AU2003263069A1 (en) A method for depositing a film on a substrate
AU2002220632A1 (en) Method for applying a substrate
AU2002211916A1 (en) Method for the formation of a thin optical crystal layer overlying a low dielectric constant substrate
AU2001233122A1 (en) Rotational casting method for coating a flexible substrate and resulting coated flexible article
AU2001250694A1 (en) System and method for deposition of coatings on a substrate
AU2002223671A1 (en) Method for generating a coating on a substrate
AU2001255358A1 (en) Methods for chemical vapor deposition of titanium-silicon-nitrogen films
AU2001268246A1 (en) Method for depositing a glass layer on a substrate
AU2003281548A1 (en) Vaporizer for thin film deposition apparatus
AU2003227546A1 (en) Method of forming a coating film
AU2002353611A1 (en) Apparatus of chemical vapor deposition for forming a thin film