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AU2001267890A1 - N-type nitride semiconductor laminate and semiconductor device using same - Google Patents

N-type nitride semiconductor laminate and semiconductor device using same

Info

Publication number
AU2001267890A1
AU2001267890A1 AU2001267890A AU6789001A AU2001267890A1 AU 2001267890 A1 AU2001267890 A1 AU 2001267890A1 AU 2001267890 A AU2001267890 A AU 2001267890A AU 6789001 A AU6789001 A AU 6789001A AU 2001267890 A1 AU2001267890 A1 AU 2001267890A1
Authority
AU
Australia
Prior art keywords
same
type nitride
semiconductor device
laminate
nitride semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001267890A
Other languages
English (en)
Inventor
Yasunobu Hosokawa
Koji Tanizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of AU2001267890A1 publication Critical patent/AU2001267890A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H10P14/24—
    • H10P14/2901—
    • H10P14/2921—
    • H10P14/3216—
    • H10P14/3416—
AU2001267890A 2000-07-03 2001-07-02 N-type nitride semiconductor laminate and semiconductor device using same Abandoned AU2001267890A1 (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2000201341 2000-07-03
JP2000-201341 2000-07-03
JP2001-27070 2001-02-02
JP2001027070 2001-02-02
JP2001-155577 2001-05-24
JP2001155577A JP5145617B2 (ja) 2000-07-03 2001-05-24 ｎ型窒化物半導体積層体およびそれを用いる半導体素子
PCT/JP2001/005690 WO2002003474A2 (fr) 2000-07-03 2001-07-02 Lamine semi-conducteur a nitrure de type n et dispositif a semi-conducteur faisant intervenir ledit lamine

Publications (1)

Publication Number Publication Date
AU2001267890A1 true AU2001267890A1 (en) 2002-01-14

Family

ID=27343953

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001267890A Abandoned AU2001267890A1 (en) 2000-07-03 2001-07-02 N-type nitride semiconductor laminate and semiconductor device using same

Country Status (6)

Country Link
US (1) US20030205711A1 (fr)
JP (1) JP5145617B2 (fr)
AU (1) AU2001267890A1 (fr)
MY (1) MY143405A (fr)
TW (1) TW511300B (fr)
WO (1) WO2002003474A2 (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
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JP3955367B2 (ja) 1997-09-30 2007-08-08 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 光半導体素子およびその製造方法
US6849472B2 (en) 1997-09-30 2005-02-01 Lumileds Lighting U.S., Llc Nitride semiconductor device with reduced polarization fields
KR101034055B1 (ko) 2003-07-18 2011-05-12 엘지이노텍 주식회사 발광 다이오드 및 그 제조방법
JP4583060B2 (ja) * 2004-03-26 2010-11-17 京セラ株式会社 単結晶サファイア基板の製造方法および窒化物半導体発光素子の製造方法
KR100678854B1 (ko) * 2004-04-13 2007-02-05 엘지이노텍 주식회사 발광 다이오드 및 그 제조방법
TWI427828B (zh) * 2004-07-30 2014-02-21 住友化學股份有限公司 氮化物類化合物半導體及其製法
US20060267043A1 (en) * 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
JP2006339550A (ja) * 2005-06-06 2006-12-14 Sony Corp 半導体素子及びその製造方法、並びに半導体装置及びその製造方法
JP4853198B2 (ja) * 2005-12-02 2012-01-11 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
JP2008227103A (ja) * 2007-03-12 2008-09-25 Rohm Co Ltd ＧａＮ系半導体発光素子
CN101494262B (zh) * 2008-01-23 2013-11-06 晶元光电股份有限公司 发光二极管的结构
JP2008252124A (ja) * 2008-06-27 2008-10-16 Sumitomo Electric Ind Ltd 窒化物系半導体装置
JP2010123920A (ja) * 2008-10-20 2010-06-03 Sumitomo Electric Ind Ltd 窒化物系半導体発光素子を作製する方法、及びエピタキシャルウエハを作製する方法
JP5633154B2 (ja) * 2010-02-18 2014-12-03 豊田合成株式会社 半導体発光素子の製造方法および半導体発光素子、ランプ、電子機器、機械装置
JP5388967B2 (ja) * 2010-08-09 2014-01-15 株式会社東芝 半導体発光素子
JP2013183126A (ja) * 2012-03-05 2013-09-12 Sharp Corp 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
CN104641453B (zh) * 2012-10-12 2018-03-30 住友电气工业株式会社 Iii族氮化物复合衬底及其制造方法以及制造iii族氮化物半导体器件的方法
JP2013219386A (ja) * 2013-06-24 2013-10-24 Toshiba Corp 半導体発光素子
JP6124740B2 (ja) * 2013-08-30 2017-05-10 シャープ株式会社 窒化物半導体発光素子の製造方法、窒化物半導体発光素子および窒化物半導体発光素子用下地基板
JP5996499B2 (ja) * 2013-09-02 2016-09-21 株式会社東芝 半導体発光素子及び半導体発光素子の製造方法
US11322643B2 (en) 2014-05-27 2022-05-03 Silanna UV Technologies Pte Ltd Optoelectronic device
CN106537617B (zh) 2014-05-27 2019-04-16 斯兰纳Uv科技有限公司 使用半导体结构和超晶格的高级电子装置结构
CN106415854B (zh) 2014-05-27 2019-10-01 斯兰纳Uv科技有限公司 包括n型和p型超晶格的电子装置
JP6817072B2 (ja) 2014-05-27 2021-01-20 シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドＳｉｌａｎｎａ Ｕｖ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｐｔｅ Ｌｔｄ 光電子デバイス
GB2586862B (en) * 2019-09-06 2021-12-15 Plessey Semiconductors Ltd LED precursor incorporating strain relaxing structure

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3778609B2 (ja) * 1996-04-26 2006-05-24 三洋電機株式会社 半導体素子の製造方法
JP3448450B2 (ja) * 1996-04-26 2003-09-22 三洋電機株式会社 発光素子およびその製造方法
JP3374737B2 (ja) * 1997-01-09 2003-02-10 日亜化学工業株式会社 窒化物半導体素子
JPH10215035A (ja) * 1997-01-30 1998-08-11 Toshiba Corp 化合物半導体素子及びその製造方法
JP3744211B2 (ja) * 1997-09-01 2006-02-08 日亜化学工業株式会社 窒化物半導体素子
JP3647236B2 (ja) * 1997-12-22 2005-05-11 日亜化学工業株式会社 窒化物半導体レーザ素子
US7193246B1 (en) * 1998-03-12 2007-03-20 Nichia Corporation Nitride semiconductor device
JP3622562B2 (ja) * 1998-03-12 2005-02-23 日亜化学工業株式会社 窒化物半導体発光ダイオード
JP4166885B2 (ja) * 1998-05-18 2008-10-15 富士通株式会社 光半導体装置およびその製造方法

Also Published As

Publication number Publication date
WO2002003474A3 (fr) 2002-06-27
MY143405A (en) 2011-05-13
JP2002305323A (ja) 2002-10-18
US20030205711A1 (en) 2003-11-06
JP5145617B2 (ja) 2013-02-20
TW511300B (en) 2002-11-21
WO2002003474A2 (fr) 2002-01-10

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