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AU2001263382A1 - Semiconductor component and method of manufacturing - Google Patents

Semiconductor component and method of manufacturing

Info

Publication number
AU2001263382A1
AU2001263382A1 AU2001263382A AU6338201A AU2001263382A1 AU 2001263382 A1 AU2001263382 A1 AU 2001263382A1 AU 2001263382 A AU2001263382 A AU 2001263382A AU 6338201 A AU6338201 A AU 6338201A AU 2001263382 A1 AU2001263382 A1 AU 2001263382A1
Authority
AU
Australia
Prior art keywords
manufacturing
semiconductor component
semiconductor
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001263382A
Inventor
Leonard J. Borucki
Laura Contreras
Jill C. Hildreth
Jay P. John
Shifeng Lu
Andrew S. Morton
Shawn G. Thomas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2001263382A1 publication Critical patent/AU2001263382A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
AU2001263382A 2000-06-27 2001-05-23 Semiconductor component and method of manufacturing Abandoned AU2001263382A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US60503700A 2000-06-27 2000-06-27
US09605037 2000-06-27
PCT/US2001/016689 WO2002001624A1 (en) 2000-06-27 2001-05-23 Semiconductor component and method of manufacturing

Publications (1)

Publication Number Publication Date
AU2001263382A1 true AU2001263382A1 (en) 2002-01-08

Family

ID=24422001

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001263382A Abandoned AU2001263382A1 (en) 2000-06-27 2001-05-23 Semiconductor component and method of manufacturing

Country Status (2)

Country Link
AU (1) AU2001263382A1 (en)
WO (1) WO2002001624A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1439570A1 (en) 2003-01-14 2004-07-21 Interuniversitair Microelektronica Centrum ( Imec) SiGe strain relaxed buffer for high mobility devices and a method of fabricating it
DE102004033149B4 (en) * 2004-07-08 2006-09-28 Infineon Technologies Ag A method of fabricating a dual gate transistor, a memory cell, a vertical transistor, and buried word or bit lines, each using a buried etch stop layer
JP4946247B2 (en) * 2006-08-04 2012-06-06 信越半導体株式会社 Epitaxial substrate and liquid phase epitaxial growth method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19755979A1 (en) * 1996-12-09 1999-06-10 Inst Halbleiterphysik Gmbh Silicon germanium heterobipolar transistor
US6492711B1 (en) * 1999-06-22 2002-12-10 Matsushita Electric Industrial Co., Ltd. Heterojunction bipolar transistor and method for fabricating the same

Also Published As

Publication number Publication date
WO2002001624A1 (en) 2002-01-03

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