AU2001262623A1 - A thin film field effect transistor - Google Patents
A thin film field effect transistorInfo
- Publication number
- AU2001262623A1 AU2001262623A1 AU2001262623A AU6262301A AU2001262623A1 AU 2001262623 A1 AU2001262623 A1 AU 2001262623A1 AU 2001262623 A AU2001262623 A AU 2001262623A AU 6262301 A AU6262301 A AU 6262301A AU 2001262623 A1 AU2001262623 A1 AU 2001262623A1
- Authority
- AU
- Australia
- Prior art keywords
- thin film
- field effect
- effect transistor
- film field
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6728—Vertical TFTs
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0012798 | 2000-05-25 | ||
| GB0012798A GB2362755A (en) | 2000-05-25 | 2000-05-25 | Thin film field effect transistor with a conical structure |
| PCT/IL2001/000477 WO2001091192A1 (en) | 2000-05-25 | 2001-05-24 | A thin film field effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2001262623A1 true AU2001262623A1 (en) | 2001-12-03 |
Family
ID=9892403
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2001262623A Abandoned AU2001262623A1 (en) | 2000-05-25 | 2001-05-24 | A thin film field effect transistor |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6720617B2 (en) |
| AU (1) | AU2001262623A1 (en) |
| GB (1) | GB2362755A (en) |
| WO (1) | WO2001091192A1 (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100485177B1 (en) * | 2002-12-05 | 2005-04-22 | 동부아남반도체 주식회사 | MOS transistor and fabrication method thereof |
| JP3828511B2 (en) * | 2003-06-26 | 2006-10-04 | 株式会社東芝 | Manufacturing method of semiconductor device |
| EP1807555A4 (en) * | 2004-06-16 | 2010-04-14 | Mosaic Crystals Ltd | CRYSTALLINE GROWTH METHOD AND APPARATUS |
| US7288821B2 (en) * | 2005-04-08 | 2007-10-30 | International Business Machines Corporation | Structure and method of three dimensional hybrid orientation technology |
| US20080210124A1 (en) * | 2007-03-01 | 2008-09-04 | Xerox Corporation | Core-shell polymer particles |
| JP5933300B2 (en) * | 2011-03-16 | 2016-06-08 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| US8847233B2 (en) | 2011-05-12 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film |
| JP2013042117A (en) * | 2011-07-15 | 2013-02-28 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| CN106252352B (en) * | 2016-09-30 | 2019-03-29 | 中国科学院微电子研究所 | Semiconductor arrangement, method of making the same, and electronic device including the arrangement |
| CN112382637A (en) * | 2020-11-11 | 2021-02-19 | 京东方科技集团股份有限公司 | Display back plate, preparation method thereof and display device |
| US20240178290A1 (en) * | 2022-11-28 | 2024-05-30 | Globalfoundries U.S. Inc. | Ic structure with gate electrode fully within v-shaped cavity |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4003036A (en) * | 1975-10-23 | 1977-01-11 | American Micro-Systems, Inc. | Single IGFET memory cell with buried storage element |
| JPS5537250U (en) * | 1978-08-31 | 1980-03-10 | ||
| US4272302A (en) * | 1979-09-05 | 1981-06-09 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method of making V-MOS field effect transistors utilizing a two-step anisotropic etching and ion implantation |
| FR2466101A1 (en) * | 1979-09-18 | 1981-03-27 | Thomson Csf | PROCESS FOR FORMING POLYCRYSTALLINE SILICON LAYERS LOCATED ON SILICON-COATED SILICA REGIONS AND APPLICATION TO THE MANUFACTURE OF AN AUTOALIGNAL NON-PLANAR MOS TRANSISTOR |
| US4335450A (en) * | 1980-01-30 | 1982-06-15 | International Business Machines Corporation | Non-destructive read out field effect transistor memory cell system |
| FR2513016A1 (en) * | 1981-09-14 | 1983-03-18 | Radiotechnique Compelec | HIGH VOLTAGE TRANSFORMER V MOS AND METHOD FOR MANUFACTURING THE SAME |
| JPS58106870A (en) * | 1981-12-18 | 1983-06-25 | Nissan Motor Co Ltd | Power metal oxide semiconductor field-effect transistor |
| KR920010963A (en) | 1990-11-23 | 1992-06-27 | 오가 노리오 | SOI type vertical channel FET and manufacturing method thereof |
| US5229310A (en) | 1991-05-03 | 1993-07-20 | Motorola, Inc. | Method for making a self-aligned vertical thin-film transistor in a semiconductor device |
| KR950001159B1 (en) | 1991-12-27 | 1995-02-11 | 삼성전자 주식회사 | Tft and its manufacturing method for memory device |
| US5283456A (en) | 1992-06-17 | 1994-02-01 | International Business Machines Corporation | Vertical gate transistor with low temperature epitaxial channel |
| US5391505A (en) * | 1993-11-01 | 1995-02-21 | Lsi Logic Corporation | Active device constructed in opening formed in insulation layer and process for making same |
| US5757038A (en) | 1995-11-06 | 1998-05-26 | International Business Machines Corporation | Self-aligned dual gate MOSFET with an ultranarrow channel |
| KR100223886B1 (en) | 1995-12-26 | 1999-10-15 | 구본준 | A semiconductor device and method for producing the same |
| US5689127A (en) | 1996-03-05 | 1997-11-18 | International Business Machines Corporation | Vertical double-gate field effect transistor |
| JPH10290007A (en) | 1997-04-14 | 1998-10-27 | Sharp Corp | Semiconductor device and manufacturing method thereof |
-
2000
- 2000-05-25 GB GB0012798A patent/GB2362755A/en not_active Withdrawn
-
2001
- 2001-05-23 US US09/863,838 patent/US6720617B2/en not_active Expired - Lifetime
- 2001-05-24 AU AU2001262623A patent/AU2001262623A1/en not_active Abandoned
- 2001-05-24 WO PCT/IL2001/000477 patent/WO2001091192A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2001091192A1 (en) | 2001-11-29 |
| GB0012798D0 (en) | 2000-07-19 |
| GB2362755A (en) | 2001-11-28 |
| US6720617B2 (en) | 2004-04-13 |
| US20020000619A1 (en) | 2002-01-03 |
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