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AU2001259119A1 - Method and apparatus for plasma cleaning of workpieces - Google Patents

Method and apparatus for plasma cleaning of workpieces

Info

Publication number
AU2001259119A1
AU2001259119A1 AU2001259119A AU5911901A AU2001259119A1 AU 2001259119 A1 AU2001259119 A1 AU 2001259119A1 AU 2001259119 A AU2001259119 A AU 2001259119A AU 5911901 A AU5911901 A AU 5911901A AU 2001259119 A1 AU2001259119 A1 AU 2001259119A1
Authority
AU
Australia
Prior art keywords
workpieces
plasma cleaning
plasma
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001259119A
Inventor
Lianjun Liu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2001259119A1 publication Critical patent/AU2001259119A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H10P52/00—
    • H10P70/12—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H10P72/0406—
    • H10P72/0421—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
AU2001259119A 2000-04-25 2001-04-23 Method and apparatus for plasma cleaning of workpieces Abandoned AU2001259119A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US19935400P 2000-04-25 2000-04-25
US60199354 2000-04-25
PCT/US2001/013002 WO2001082355A2 (en) 2000-04-25 2001-04-23 Method and apparatus for plasma cleaning of workpieces

Publications (1)

Publication Number Publication Date
AU2001259119A1 true AU2001259119A1 (en) 2001-11-07

Family

ID=22737179

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001259119A Abandoned AU2001259119A1 (en) 2000-04-25 2001-04-23 Method and apparatus for plasma cleaning of workpieces

Country Status (7)

Country Link
US (1) US6776170B2 (en)
JP (1) JP2003535458A (en)
KR (1) KR100856451B1 (en)
CN (1) CN1249786C (en)
AU (1) AU2001259119A1 (en)
TW (1) TW492060B (en)
WO (1) WO2001082355A2 (en)

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US7014887B1 (en) * 1999-09-02 2006-03-21 Applied Materials, Inc. Sequential sputter and reactive precleans of vias and contacts
AU2002227418A1 (en) * 2001-01-22 2002-08-06 Tokyo Electron Limited Vertically translatable chuck assembly and method for a plasma reactor system
JP2002237486A (en) * 2001-02-08 2002-08-23 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method
EP1585999A4 (en) * 2002-08-02 2008-09-17 E A Fischione Instr Inc Methods and apparatus for preparing specimens for microscopy
US6992011B2 (en) * 2003-01-15 2006-01-31 Tokyo Electron Limited Method and apparatus for removing material from chamber and wafer surfaces by high temperature hydrogen-containing plasma
US8101025B2 (en) 2003-05-27 2012-01-24 Applied Materials, Inc. Method for controlling corrosion of a substrate
JP2004363332A (en) * 2003-06-05 2004-12-24 Nec Yamagata Ltd Plasma cvd equipment
US7244336B2 (en) * 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
FR2865420B1 (en) * 2004-01-28 2007-09-14 Saint Gobain METHOD FOR CLEANING A SUBSTRATE
US7241361B2 (en) * 2004-02-20 2007-07-10 Fei Company Magnetically enhanced, inductively coupled plasma source for a focused ion beam system
DE102004015226B3 (en) 2004-03-24 2005-08-25 Siemens Ag Plasma cleaning method suitable for interior surfaces of e.g. bulbs for discharge lamps, forms back pressure and ignites plasma only inside bulb
US7767145B2 (en) 2005-03-28 2010-08-03 Toyko Electron Limited High pressure fourier transform infrared cell
US7049209B1 (en) * 2005-04-01 2006-05-23 International Business Machines Corporation De-fluorination of wafer surface and related structure
CN100362633C (en) * 2005-12-02 2008-01-16 北京北方微电子基地设备工艺研究中心有限责任公司 A plasma cleaning method for removing silicon wafer surface particles after etching process
US7846257B2 (en) * 2005-12-14 2010-12-07 Tokyo Electron Limited Method for cleaning substrate processing apparatus, substrate processing apparatus, program and recording medium having program recorded therein
CA2664516A1 (en) * 2006-10-27 2008-05-02 Oerlikon Trading Ag, Truebbach Method and apparatus for manufacturing cleaned substrates or clean substrates which are further processed
JP5160341B2 (en) * 2008-08-20 2013-03-13 東京エレクトロン株式会社 Substrate processing apparatus, substrate processing method, substrate processing program, and computer-readable recording medium recording the substrate processing program
US8900471B2 (en) 2009-02-27 2014-12-02 Applied Materials, Inc. In situ plasma clean for removal of residue from pedestal surface without breaking vacuum
CN104148334A (en) * 2014-07-02 2014-11-19 太仓华德石太工业设备有限公司 Method for performing industrial local cleaning through hydrocarbon/ plasmas
GB201502453D0 (en) * 2015-02-13 2015-04-01 Spts Technologies Ltd Plasma producing apparatus
US9595448B2 (en) * 2015-06-29 2017-03-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method for cleaning plasma processing chamber and substrate
US12051589B2 (en) 2016-06-28 2024-07-30 Lam Research Corporation Tin oxide thin film spacers in semiconductor device manufacturing
US9824893B1 (en) 2016-06-28 2017-11-21 Lam Research Corporation Tin oxide thin film spacers in semiconductor device manufacturing
KR102722138B1 (en) 2017-02-13 2024-10-24 램 리써치 코포레이션 Method to create air gaps
US10546748B2 (en) 2017-02-17 2020-01-28 Lam Research Corporation Tin oxide films in semiconductor device manufacturing
US10544519B2 (en) * 2017-08-25 2020-01-28 Aixtron Se Method and apparatus for surface preparation prior to epitaxial deposition
CN107599727B (en) * 2017-09-29 2024-02-06 苏州市职业大学 Plasma generation equipment and coating treatment method for core carving handicrafts coating
US11355353B2 (en) 2018-01-30 2022-06-07 Lam Research Corporation Tin oxide mandrels in patterning
US11404245B2 (en) * 2018-02-28 2022-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. DC bias in plasma process
KR102841279B1 (en) 2018-03-19 2025-07-31 램 리써치 코포레이션 chamferless via integration scheme
CN115565867A (en) 2019-06-27 2023-01-03 朗姆研究公司 Alternate etch and passivation process
CN111389815A (en) * 2020-04-24 2020-07-10 中科九微科技有限公司 Cleaning equipment and method for cleaning thin-film vacuum gauge deposit removal device
CN113245306A (en) * 2021-05-08 2021-08-13 河北博威集成电路有限公司 Plasma cleaning method of GaN microwave chip
KR102667055B1 (en) 2021-05-13 2024-05-23 주식회사 디에이피 Plasma cleaning device
US11688588B1 (en) * 2022-02-09 2023-06-27 Velvetch Llc Electron bias control signals for electron enhanced material processing
US11869747B1 (en) 2023-01-04 2024-01-09 Velvetch Llc Atomic layer etching by electron wavefront
CN117696566B (en) * 2024-02-06 2024-05-28 江苏芯梦半导体设备有限公司 Cleaning method and cleaning system for semiconductor storage container

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US4662977A (en) * 1986-05-05 1987-05-05 University Patents, Inc. Neutral particle surface alteration
JPH01196819A (en) * 1988-02-02 1989-08-08 Matsushita Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device
JPH0774147A (en) * 1993-07-05 1995-03-17 Sony Corp Dry etching method and dry etching apparatus
JPH07243064A (en) * 1994-01-03 1995-09-19 Xerox Corp Cleaning method for substrate
JP3329128B2 (en) * 1995-03-28 2002-09-30 ソニー株式会社 Method for manufacturing semiconductor device
US5882538A (en) * 1995-08-28 1999-03-16 Georgia Tech Research Corporation Method and apparatus for low energy electron enhanced etching of substrates
JP3380948B2 (en) * 1995-09-19 2003-02-24 ソニー株式会社 Helicon wave plasma apparatus and plasma processing method using the same
KR100250519B1 (en) * 1997-08-30 2000-04-01 황철주 Method for manufacturing semiconductor device
US6107192A (en) * 1997-12-30 2000-08-22 Applied Materials, Inc. Reactive preclean prior to metallization for sub-quarter micron application
JP4228424B2 (en) * 1998-09-04 2009-02-25 ソニー株式会社 Manufacturing method of semiconductor device
JP3956499B2 (en) * 1998-09-07 2007-08-08 ソニー株式会社 Manufacturing method of semiconductor device
JP3619030B2 (en) * 1998-11-12 2005-02-09 キヤノン株式会社 Plasma processing apparatus and processing method

Also Published As

Publication number Publication date
JP2003535458A (en) 2003-11-25
CN1423833A (en) 2003-06-11
US20030047191A1 (en) 2003-03-13
US6776170B2 (en) 2004-08-17
KR20030007457A (en) 2003-01-23
WO2001082355A2 (en) 2001-11-01
WO2001082355A3 (en) 2002-03-21
CN1249786C (en) 2006-04-05
TW492060B (en) 2002-06-21
KR100856451B1 (en) 2008-09-04

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