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AU2001253575A1 - Process for fabricating thin film transistors - Google Patents

Process for fabricating thin film transistors

Info

Publication number
AU2001253575A1
AU2001253575A1 AU2001253575A AU5357501A AU2001253575A1 AU 2001253575 A1 AU2001253575 A1 AU 2001253575A1 AU 2001253575 A AU2001253575 A AU 2001253575A AU 5357501 A AU5357501 A AU 5357501A AU 2001253575 A1 AU2001253575 A1 AU 2001253575A1
Authority
AU
Australia
Prior art keywords
substrate
thin film
film transistors
fabricating thin
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001253575A
Inventor
Yu Chen
Kevin L. Denis
Paul S. Drzaic
Joseph M. Jacobson
Peter T Kazlas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
E Ink Corp
Original Assignee
E Ink Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by E Ink Corp filed Critical E Ink Corp
Publication of AU2001253575A1 publication Critical patent/AU2001253575A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates

Landscapes

  • Thin Film Transistor (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

Transistors are formed by depositing at least one layer of semiconductor material on a substrate comprising a polyphenylene polyimide. The substrate permits the use of processing temperatures in excess of 300° C. during the processes used to form the transistors, thus allowing the formation of high quality silicon semiconductor layers. The substrate also has a low coefficient of thermal expansion, which closely matches that of silicon, thus reducing any tendency for a silicon layer to crack or delaminate.
AU2001253575A 2000-04-18 2001-04-17 Process for fabricating thin film transistors Abandoned AU2001253575A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US19773100P 2000-04-18 2000-04-18
US60197731 2000-04-18
PCT/US2001/012429 WO2001080287A2 (en) 2000-04-18 2001-04-17 Process for fabricating thin film transistors

Publications (1)

Publication Number Publication Date
AU2001253575A1 true AU2001253575A1 (en) 2001-10-30

Family

ID=22730530

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001253575A Abandoned AU2001253575A1 (en) 2000-04-18 2001-04-17 Process for fabricating thin film transistors

Country Status (9)

Country Link
US (2) US6825068B2 (en)
EP (1) EP1275156B1 (en)
JP (1) JP2003531487A (en)
KR (1) KR100767233B1 (en)
CN (1) CN1237623C (en)
AT (1) ATE438927T1 (en)
AU (1) AU2001253575A1 (en)
DE (1) DE60139463D1 (en)
WO (1) WO2001080287A2 (en)

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