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TW430827B - Resistors with low temperature coefficient of resistance and methods of making - Google Patents

Resistors with low temperature coefficient of resistance and methods of making

Info

Publication number
TW430827B
TW430827B TW88107567A TW88107567A TW430827B TW 430827 B TW430827 B TW 430827B TW 88107567 A TW88107567 A TW 88107567A TW 88107567 A TW88107567 A TW 88107567A TW 430827 B TW430827 B TW 430827B
Authority
TW
Taiwan
Prior art keywords
resistance
low temperature
temperature coefficient
making
resistors
Prior art date
Application number
TW88107567A
Other languages
Chinese (zh)
Inventor
Chandra Venkatraman
Original Assignee
Advanced Refractory Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Refractory Tech filed Critical Advanced Refractory Tech
Application granted granted Critical
Publication of TW430827B publication Critical patent/TW430827B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/06Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material including means to minimise changes in resistance with changes in temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • Thermistors And Varistors (AREA)
  • Non-Adjustable Resistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

The present invention relates to a method of making a resistor having a low temperature coefficient of resistance which includes applying a first resistor layer and applying a second resistor layer over the first resistor layer, where either the first resistor layer or the second resistor layer includes a diamond-like material. The diamond-like material includes carbon, hydrogen, and a metal, and has a low temperature coefficient of resistance. The present invention also relates to a resistor.
TW88107567A 1998-05-22 1999-05-11 Resistors with low temperature coefficient of resistance and methods of making TW430827B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8354898A 1998-05-22 1998-05-22

Publications (1)

Publication Number Publication Date
TW430827B true TW430827B (en) 2001-04-21

Family

ID=22179048

Family Applications (1)

Application Number Title Priority Date Filing Date
TW88107567A TW430827B (en) 1998-05-22 1999-05-11 Resistors with low temperature coefficient of resistance and methods of making

Country Status (5)

Country Link
EP (1) EP1084500A4 (en)
JP (1) JP2002517084A (en)
AU (1) AU4084999A (en)
TW (1) TW430827B (en)
WO (1) WO1999062077A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9113546B2 (en) 2012-09-10 2015-08-18 Kabushiki Kaisha Nihon Micronics Method for manufacturing electric film body
TWI612538B (en) * 2016-08-03 2018-01-21 國立屏東科技大學 Alloy thin film resistor

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3555844B2 (en) 1999-04-09 2004-08-18 三宅 正二郎 Sliding member and manufacturing method thereof
DE60139463D1 (en) * 2000-04-18 2009-09-17 E Ink Corp PROCESS FOR THE MANUFACTURE OF THIN FILM TRANSISTORS
DE10058581C1 (en) * 2000-11-18 2002-03-14 Fraunhofer Ges Forschung Electromechanically controlled electrical resistance element used as a position sensor comprises an electrically conducting layer on a substrate, and a wear resistant layer
JP2004138128A (en) 2002-10-16 2004-05-13 Nissan Motor Co Ltd Sliding members for automobile engines
US6969198B2 (en) 2002-11-06 2005-11-29 Nissan Motor Co., Ltd. Low-friction sliding mechanism
JP3891433B2 (en) 2003-04-15 2007-03-14 日産自動車株式会社 Fuel injection valve
EP1479946B1 (en) 2003-05-23 2012-12-19 Nissan Motor Co., Ltd. Piston for internal combustion engine
JP2004360649A (en) 2003-06-06 2004-12-24 Nissan Motor Co Ltd Engine piston pin
JP4863152B2 (en) 2003-07-31 2012-01-25 日産自動車株式会社 gear
JP2005054617A (en) 2003-08-08 2005-03-03 Nissan Motor Co Ltd Valve mechanism
JP4973971B2 (en) 2003-08-08 2012-07-11 日産自動車株式会社 Sliding member
JP4117553B2 (en) 2003-08-13 2008-07-16 日産自動車株式会社 Chain drive
EP1507088B1 (en) 2003-08-13 2007-08-29 Nissan Motor Company, Limited Structure for connecting piston to crankshaft
JP4539205B2 (en) 2003-08-21 2010-09-08 日産自動車株式会社 Refrigerant compressor
US7771821B2 (en) 2003-08-21 2010-08-10 Nissan Motor Co., Ltd. Low-friction sliding member and low-friction sliding mechanism using same
EP1508611B1 (en) 2003-08-22 2019-04-17 Nissan Motor Co., Ltd. Transmission comprising low-friction sliding members and transmission oil therefor
US7165830B2 (en) 2004-05-14 2007-01-23 Lexmark International, Inc. Resistor protective layer for micro-fluid ejection devices
CN115632048B (en) * 2022-09-23 2023-08-01 北京科技大学 TaN thin film resistor with nano diamond passivation layer and preparation method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5352493A (en) * 1991-05-03 1994-10-04 Veniamin Dorfman Method for forming diamond-like nanocomposite or doped-diamond-like nanocomposite films
US5786068A (en) * 1991-05-03 1998-07-28 Advanced Refractory Technologies, Inc. Electrically tunable coatings
JPH06163201A (en) * 1992-06-16 1994-06-10 Philips Electron Nv Resistance thin film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9113546B2 (en) 2012-09-10 2015-08-18 Kabushiki Kaisha Nihon Micronics Method for manufacturing electric film body
TWI612538B (en) * 2016-08-03 2018-01-21 國立屏東科技大學 Alloy thin film resistor

Also Published As

Publication number Publication date
EP1084500A4 (en) 2005-08-17
EP1084500A1 (en) 2001-03-21
AU4084999A (en) 1999-12-13
JP2002517084A (en) 2002-06-11
WO1999062077A1 (en) 1999-12-02

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Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees