AU2001247680A1 - A semitransparent optical detector including a polycrystalline layer and method of making - Google Patents
A semitransparent optical detector including a polycrystalline layer and method of makingInfo
- Publication number
- AU2001247680A1 AU2001247680A1 AU2001247680A AU4768001A AU2001247680A1 AU 2001247680 A1 AU2001247680 A1 AU 2001247680A1 AU 2001247680 A AU2001247680 A AU 2001247680A AU 4768001 A AU4768001 A AU 4768001A AU 2001247680 A1 AU2001247680 A1 AU 2001247680A1
- Authority
- AU
- Australia
- Prior art keywords
- making
- optical detector
- polycrystalline layer
- detector including
- semitransparent optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/164—Polycrystalline semiconductors
- H10F77/1642—Polycrystalline semiconductors including only Group IV materials
- H10F77/1645—Polycrystalline semiconductors including only Group IV materials including microcrystalline silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
- H10F30/2235—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier the devices comprising Group IV amorphous materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/50—Encapsulations or containers
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US19244200P | 2000-03-27 | 2000-03-27 | |
| US19244100P | 2000-03-27 | 2000-03-27 | |
| US19244000P | 2000-03-27 | 2000-03-27 | |
| US60/192,440 | 2000-03-27 | ||
| US60/192,441 | 2000-03-27 | ||
| US60/192,442 | 2000-03-27 | ||
| PCT/US2001/009176 WO2001073857A2 (en) | 2000-03-27 | 2001-03-20 | A semitransparent optical detector including a polycrystalline layer and method of making |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2001247680A1 true AU2001247680A1 (en) | 2001-10-08 |
Family
ID=27393052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2001247680A Abandoned AU2001247680A1 (en) | 2000-03-27 | 2001-03-20 | A semitransparent optical detector including a polycrystalline layer and method of making |
Country Status (2)
| Country | Link |
|---|---|
| AU (1) | AU2001247680A1 (en) |
| WO (1) | WO2001073857A2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10127017B4 (en) * | 2001-06-01 | 2007-11-29 | Forschungszentrum Jülich GmbH | Photosensor for a transmitted light method for detecting the intensity profile of an optically standing wave |
| GB2383680A (en) * | 2001-12-27 | 2003-07-02 | Bookham Technology Plc | A Light Sensor |
| NL1028253C2 (en) * | 2005-02-11 | 2006-08-14 | Uteke Maria Klaassens | Sensor microchip with contact ring, image recording sensor, image recording camera. |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4528082A (en) * | 1983-09-26 | 1985-07-09 | Exxon Research And Engineering Co. | Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers |
| JPS60210826A (en) * | 1984-04-03 | 1985-10-23 | Mitsubishi Electric Corp | Solar battery |
| JPS6194382A (en) * | 1984-10-09 | 1986-05-13 | ゼロツクス コーポレーシヨン | 2 terminal thin film photodetector |
| WO1989003593A1 (en) * | 1987-10-15 | 1989-04-20 | Stemcor Corporation | Low noise photodetection and photodetector therefor |
| US5162239A (en) * | 1990-12-27 | 1992-11-10 | Xerox Corporation | Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors |
| AUPM982294A0 (en) * | 1994-12-02 | 1995-01-05 | Pacific Solar Pty Limited | Method of manufacturing a multilayer solar cell |
| JP3754815B2 (en) * | 1997-02-19 | 2006-03-15 | キヤノン株式会社 | Photovoltaic element, photoelectric conversion element, method for producing photovoltaic element, and method for producing photoelectric conversion element |
-
2001
- 2001-03-20 AU AU2001247680A patent/AU2001247680A1/en not_active Abandoned
- 2001-03-20 WO PCT/US2001/009176 patent/WO2001073857A2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2001073857A3 (en) | 2002-01-31 |
| WO2001073857A9 (en) | 2002-12-19 |
| WO2001073857A2 (en) | 2001-10-04 |
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