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AU2001247680A1 - A semitransparent optical detector including a polycrystalline layer and method of making - Google Patents

A semitransparent optical detector including a polycrystalline layer and method of making

Info

Publication number
AU2001247680A1
AU2001247680A1 AU2001247680A AU4768001A AU2001247680A1 AU 2001247680 A1 AU2001247680 A1 AU 2001247680A1 AU 2001247680 A AU2001247680 A AU 2001247680A AU 4768001 A AU4768001 A AU 4768001A AU 2001247680 A1 AU2001247680 A1 AU 2001247680A1
Authority
AU
Australia
Prior art keywords
making
optical detector
polycrystalline layer
detector including
semitransparent optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001247680A
Inventor
Adam M. Payne
Matthias Wagner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aegis Semiconductor Inc
Original Assignee
Aegis Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aegis Semiconductor Inc filed Critical Aegis Semiconductor Inc
Publication of AU2001247680A1 publication Critical patent/AU2001247680A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/16Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164Polycrystalline semiconductors
    • H10F77/1642Polycrystalline semiconductors including only Group IV materials
    • H10F77/1645Polycrystalline semiconductors including only Group IV materials including microcrystalline silicon
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H10F30/2235Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier the devices comprising Group IV amorphous materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/10Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/30Coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/50Encapsulations or containers
AU2001247680A 2000-03-27 2001-03-20 A semitransparent optical detector including a polycrystalline layer and method of making Abandoned AU2001247680A1 (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US19244200P 2000-03-27 2000-03-27
US19244100P 2000-03-27 2000-03-27
US19244000P 2000-03-27 2000-03-27
US60/192,440 2000-03-27
US60/192,441 2000-03-27
US60/192,442 2000-03-27
PCT/US2001/009176 WO2001073857A2 (en) 2000-03-27 2001-03-20 A semitransparent optical detector including a polycrystalline layer and method of making

Publications (1)

Publication Number Publication Date
AU2001247680A1 true AU2001247680A1 (en) 2001-10-08

Family

ID=27393052

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001247680A Abandoned AU2001247680A1 (en) 2000-03-27 2001-03-20 A semitransparent optical detector including a polycrystalline layer and method of making

Country Status (2)

Country Link
AU (1) AU2001247680A1 (en)
WO (1) WO2001073857A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10127017B4 (en) * 2001-06-01 2007-11-29 Forschungszentrum Jülich GmbH Photosensor for a transmitted light method for detecting the intensity profile of an optically standing wave
GB2383680A (en) * 2001-12-27 2003-07-02 Bookham Technology Plc A Light Sensor
NL1028253C2 (en) * 2005-02-11 2006-08-14 Uteke Maria Klaassens Sensor microchip with contact ring, image recording sensor, image recording camera.

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4528082A (en) * 1983-09-26 1985-07-09 Exxon Research And Engineering Co. Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers
JPS60210826A (en) * 1984-04-03 1985-10-23 Mitsubishi Electric Corp Solar battery
JPS6194382A (en) * 1984-10-09 1986-05-13 ゼロツクス コーポレーシヨン 2 terminal thin film photodetector
WO1989003593A1 (en) * 1987-10-15 1989-04-20 Stemcor Corporation Low noise photodetection and photodetector therefor
US5162239A (en) * 1990-12-27 1992-11-10 Xerox Corporation Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors
AUPM982294A0 (en) * 1994-12-02 1995-01-05 Pacific Solar Pty Limited Method of manufacturing a multilayer solar cell
JP3754815B2 (en) * 1997-02-19 2006-03-15 キヤノン株式会社 Photovoltaic element, photoelectric conversion element, method for producing photovoltaic element, and method for producing photoelectric conversion element

Also Published As

Publication number Publication date
WO2001073857A3 (en) 2002-01-31
WO2001073857A9 (en) 2002-12-19
WO2001073857A2 (en) 2001-10-04

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