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AU2000246295A1 - Method for crystalline growth in epitaxial heterostructures based on gallium nitride - Google Patents

Method for crystalline growth in epitaxial heterostructures based on gallium nitride

Info

Publication number
AU2000246295A1
AU2000246295A1 AU2000246295A AU4629500A AU2000246295A1 AU 2000246295 A1 AU2000246295 A1 AU 2000246295A1 AU 2000246295 A AU2000246295 A AU 2000246295A AU 4629500 A AU4629500 A AU 4629500A AU 2000246295 A1 AU2000246295 A1 AU 2000246295A1
Authority
AU
Australia
Prior art keywords
gallium nitride
crystalline growth
heterostructures based
epitaxial heterostructures
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2000246295A
Inventor
Vladimir Semenovich Abramov
Georgy Georgievich Chumburidze
Vladimir Alexeevich Gorbylev
Alexandr Grigorievich Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OVCHINNIKOV VYACHESLAV ANATOLIEVICH
Original Assignee
OVCHIN VYACHESLAV ANATOLIEVICH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by OVCHIN VYACHESLAV ANATOLIEVICH filed Critical OVCHIN VYACHESLAV ANATOLIEVICH
Publication of AU2000246295A1 publication Critical patent/AU2000246295A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H10P14/3216—
    • H10P14/3251—
    • H10P14/3254—
    • H10P14/3416—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU2000246295A 2000-02-24 2000-02-24 Method for crystalline growth in epitaxial heterostructures based on gallium nitride Abandoned AU2000246295A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/RU2000/000062 WO2001063650A1 (en) 2000-02-24 2000-02-24 Method for crystalline growth in epitaxial heterostructures based on gallium nitride

Publications (1)

Publication Number Publication Date
AU2000246295A1 true AU2000246295A1 (en) 2001-09-03

Family

ID=20129486

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2000246295A Abandoned AU2000246295A1 (en) 2000-02-24 2000-02-24 Method for crystalline growth in epitaxial heterostructures based on gallium nitride

Country Status (2)

Country Link
AU (1) AU2000246295A1 (en)
WO (1) WO2001063650A1 (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU322115A1 (en) * 1970-05-25 1984-01-30 Skvortsov I M Method for making epitaxial layers
EP0293439B1 (en) * 1986-12-16 1993-04-21 AT&T Corp. Semi-insulating group iii-v based compositions
US5273933A (en) * 1991-07-23 1993-12-28 Kabushiki Kaisha Toshiba Vapor phase growth method of forming film in process of manufacturing semiconductor device
JP3721674B2 (en) * 1996-12-05 2005-11-30 ソニー株式会社 Method for producing nitride III-V compound semiconductor substrate

Also Published As

Publication number Publication date
WO2001063650A1 (en) 2001-08-30

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