Classifications

• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
  • H03L1/00—Stabilisation of generator output against variations of physical values, e.g. power supply
  • H03L1/02—Stabilisation of generator output against variations of physical values, e.g. power supply against variations of temperature only
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
  • H03K3/01—Details
  • H03K3/011—Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
  • H03L1/00—Stabilisation of generator output against variations of physical values, e.g. power supply
  • H03L1/02—Stabilisation of generator output against variations of physical values, e.g. power supply against variations of temperature only
  • H03L1/022—Stabilisation of generator output against variations of physical values, e.g. power supply against variations of temperature only by indirect stabilisation, i.e. by generating an electrical correction signal which is a function of the temperature
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
  • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
  • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors

Landscapes

• Semiconductor Integrated Circuits (AREA)
• Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
• Oscillators With Electromechanical Resonators (AREA)
• Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
• Dram (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=4551303

Family Applications (1)

Country Status (8)

Families Citing this family (7)

Family Cites Families (7)

• 1999
  • 1999-01-21 JP JP2000529038A patent/JP2003524305A/ja active Pending
  • 1999-01-21 CA CA002317482A patent/CA2317482A1/en not_active Abandoned
  • 1999-01-21 US US09/600,807 patent/US6337605B1/en not_active Expired - Fee Related
  • 1999-01-21 KR KR1020007007974A patent/KR20010034272A/ko not_active Withdrawn
  • 1999-01-21 AT AT99900428T patent/ATE218769T1/de not_active IP Right Cessation
  • 1999-01-21 DE DE69901684T patent/DE69901684T2/de not_active Expired - Fee Related
  • 1999-01-21 EP EP99900428A patent/EP1057264B1/de not_active Expired - Lifetime
  • 1999-01-21 WO PCT/CH1999/000028 patent/WO1999038260A1/fr not_active Ceased

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