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NO981311D0 - Fremgangsmåte for fremstilling av silisium for bruk i solceller - Google Patents

Fremgangsmåte for fremstilling av silisium for bruk i solceller

Info

Publication number
NO981311D0
NO981311D0 NO981311A NO981311A NO981311D0 NO 981311 D0 NO981311 D0 NO 981311D0 NO 981311 A NO981311 A NO 981311A NO 981311 A NO981311 A NO 981311A NO 981311 D0 NO981311 D0 NO 981311D0
Authority
NO
Norway
Prior art keywords
solar cells
producing silicon
silicon
producing
solar
Prior art date
Application number
NO981311A
Other languages
English (en)
Other versions
NO981311L (no
Inventor
Hiroyuki Baba
Masamichi Abe
Kazuhiro Hanazawa
Naomichi Nakamura
Noriyoshi Yuge
Yasuhiko Sakaguchi
Yoshiei Kato
Tetsuya Fujii
Original Assignee
Kawasaki Steel Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7487697A external-priority patent/JPH10265214A/ja
Priority claimed from JP9313291A external-priority patent/JPH10324515A/ja
Priority claimed from JP9313289A external-priority patent/JPH10324514A/ja
Application filed by Kawasaki Steel Co filed Critical Kawasaki Steel Co
Publication of NO981311D0 publication Critical patent/NO981311D0/no
Publication of NO981311L publication Critical patent/NO981311L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
NO981311A 1997-03-24 1998-03-23 Fremgangsmåte for fremstilling av silisium for bruk i solceller NO981311L (no)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP6958997 1997-03-24
JP7154697 1997-03-25
JP7487697A JPH10265214A (ja) 1997-03-27 1997-03-27 シリコンの精製方法
JP9313291A JPH10324515A (ja) 1997-03-24 1997-11-14 太陽電池用シリコンの製造方法
JP9313289A JPH10324514A (ja) 1997-03-25 1997-11-14 金属シリコンの再利用方法

Publications (2)

Publication Number Publication Date
NO981311D0 true NO981311D0 (no) 1998-03-23
NO981311L NO981311L (no) 1998-09-25

Family

ID=27524195

Family Applications (1)

Application Number Title Priority Date Filing Date
NO981311A NO981311L (no) 1997-03-24 1998-03-23 Fremgangsmåte for fremstilling av silisium for bruk i solceller

Country Status (7)

Country Link
US (1) US6090361A (no)
EP (1) EP0867405B1 (no)
CN (1) CN1119281C (no)
BR (1) BR9800953A (no)
CA (1) CA2232777C (no)
NO (1) NO981311L (no)
RU (1) RU2154606C2 (no)

Cited By (1)

* Cited by examiner, † Cited by third party
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CN111032569A (zh) * 2017-07-25 2020-04-17 道达尔太阳能国际公司 从硅片生产工艺回收亚微米硅颗粒的方法

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WO2002016265A1 (en) 2000-08-21 2002-02-28 Astropower, Inc. Method and apparatus for purifying silicon
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FR2827592B1 (fr) * 2001-07-23 2003-08-22 Invensil Silicium metallurgique de haute purete et procede d'elaboration
FR2831881B1 (fr) * 2001-11-02 2004-01-16 Hubert Lauvray Procede de purification de silicium metallurgique par plasma inductif couple a une solidification directionnelle et obtention directe de silicium de qualite solaire
AU2003277041A1 (en) * 2002-09-27 2004-04-19 Astropower, Inc. Methods and systems for purifying elements
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RU2240385C1 (ru) * 2003-10-09 2004-11-20 Темкин Леонид Иосифович Способ зонной плавки (варианты)
CN100457615C (zh) * 2003-12-04 2009-02-04 陶氏康宁公司 从冶金级硅中去除杂质以制得太阳能级硅的方法
CN100548877C (zh) * 2004-04-08 2009-10-14 陶氏康宁公司 选择具有改进性能的硅的方法
US8470279B2 (en) * 2004-04-13 2013-06-25 Si Options, Llc High purity silicon-containing products and method of manufacture
US7588745B2 (en) * 2004-04-13 2009-09-15 Si Options, Llc Silicon-containing products
US7638108B2 (en) * 2004-04-13 2009-12-29 Si Options, Llc High purity silicon-containing products
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JP4689373B2 (ja) * 2005-07-04 2011-05-25 シャープ株式会社 シリコンの再利用方法
AU2007226533B2 (en) * 2006-03-15 2012-12-13 Reaction Sciences, Inc. Method for making silicon for solar cells and other applications
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CN101085678B (zh) * 2006-06-09 2010-11-10 贵阳宝源阳光硅业有限公司 太阳能级硅的制备方法
WO2008026728A1 (en) * 2006-08-31 2008-03-06 Mitsubishi Materials Corporation Metallic silicon and process for producing the same
GEP20115178B (en) * 2006-09-14 2011-03-10 Silicium Becancour Inc Process and apparatus for purifying low-grade silicon material
CN101307487B (zh) * 2007-05-16 2010-05-19 佳科太阳能硅(厦门)有限公司 一种连续生产多晶硅锭的定向凝固方法及其装置
CN100595352C (zh) * 2007-07-17 2010-03-24 佳科太阳能硅(龙岩)有限公司 太阳能级多晶硅大锭的制备方法
US7955433B2 (en) 2007-07-26 2011-06-07 Calisolar, Inc. Method and system for forming a silicon ingot using a low-grade silicon feedstock
CN101868422B (zh) * 2007-09-13 2013-10-09 费罗索勒硅业公司 用于从冶金级硅制备中等和高纯度硅的方法
DE102007050010A1 (de) * 2007-10-17 2009-06-25 Jan-Philipp Mai Verfahren und Vorrichtung zur Herstellung von Silizium
CN101477949A (zh) * 2008-01-04 2009-07-08 陈科 硅片和其制造方法及装置
CN101597063A (zh) * 2008-06-06 2009-12-09 佳科太阳能硅(厦门)有限公司 冶金硅中杂质硼的去除方法
US20100055020A1 (en) * 2008-08-27 2010-03-04 Bp Corporation North America Inc Apparatus and Method for a Crucible Design and Tipping Mechanism for Silicon Casting
RU2381990C1 (ru) * 2008-09-15 2010-02-20 Анатолий Александрович Кравцов Способ вакуумной очистки кремния
US20120164054A1 (en) * 2009-01-08 2012-06-28 Bp Corporation North America Inc. Impurity Reducing Process and Purified Material
RU2403299C1 (ru) * 2009-03-20 2010-11-10 Анатолий Александрович Кравцов Способ вакуумной очистки кремния и устройство для его осуществления (варианты)
RU2403300C1 (ru) * 2009-06-18 2010-11-10 Анатолий Александрович Кравцов Способ вакуумной очистки кремния и устройство для его осуществления
US7888158B1 (en) * 2009-07-21 2011-02-15 Sears Jr James B System and method for making a photovoltaic unit
TWI393805B (zh) * 2009-11-16 2013-04-21 Masahiro Hoshino Purification method of metallurgical silicon
EP2502880A4 (en) * 2009-11-20 2013-07-03 Consarc Corp ELECTROMAGNETIC CASTING MACHINE FOR SILICON
TWI397617B (zh) 2010-02-12 2013-06-01 Masahiro Hoshino Metal silicon purification device
KR101180353B1 (ko) * 2010-07-01 2012-09-06 연세대학교 산학협력단 태양전지용 실리콘제조를 위한 ａｃｉｄ ｌｅａｃｈｉｎｇ을 이용한 ＭＧ-Ｓｉ중 불순물의 정련방법
TWI403461B (zh) 2010-07-21 2013-08-01 Masahiro Hoshino Method and apparatus for improving yield and yield of metallurgical silicon
BRPI1003984A2 (pt) * 2010-12-01 2012-07-17 Barra Do Guaicui S A processo para produção de silìcio metálico grau metalúrgico de elevada pureza a partir da purificação com metais e outros compostos, seguida de lixiviação
RU2465200C1 (ru) * 2011-02-14 2012-10-27 Общество с ограниченной ответственностью "ЭНЕРГИЯ" Способ рафинирования металлургического кремния
RU2465201C1 (ru) * 2011-02-14 2012-10-27 Общество с ограниченной ответственностью "ЭНЕРГИЯ" Способ получения слитков поликристаллического кремния
EP2530187A1 (en) * 2011-06-03 2012-12-05 Evonik Solar Norge AS Refining of silicon by directional solidification in an oxygen-containing atmosphere
TWI499558B (zh) * 2012-08-31 2015-09-11 Silicor Materials Inc 在定向凝固期間以反應蓋玻璃覆蓋熔融矽
CN103266349B (zh) * 2013-05-31 2015-07-15 大连理工大学 高纯中空硅材料、多晶硅铸锭硅真空固液分离方法及设备
RU2707053C1 (ru) * 2018-12-25 2019-11-21 Федеральное государственное бюджетное образовательное учреждение высшего образования "Рязанский государственный радиотехнический университет" Способ очистки металлургического кремния от углерода

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111032569A (zh) * 2017-07-25 2020-04-17 道达尔太阳能国际公司 从硅片生产工艺回收亚微米硅颗粒的方法
CN111032569B (zh) * 2017-07-25 2024-02-20 道达尔太阳能国际公司 从硅片生产工艺回收亚微米硅颗粒的方法

Also Published As

Publication number Publication date
EP0867405A1 (en) 1998-09-30
NO981311L (no) 1998-09-25
CN1199017A (zh) 1998-11-18
EP0867405B1 (en) 2003-06-04
US6090361A (en) 2000-07-18
BR9800953A (pt) 1999-09-28
CN1119281C (zh) 2003-08-27
RU2154606C2 (ru) 2000-08-20
CA2232777C (en) 2001-05-15
CA2232777A1 (en) 1998-09-24

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