NO971252D0 - Fremgangsmåte og apparatur for raffinering av silisium - Google Patents

Fremgangsmåte og apparatur for raffinering av silisium

Info

Publication number: NO971252D0
Authority: NO; Norway
Prior art keywords: refining silicon; refining; silicon
Prior art date: 1996-03-19

Application number

NO971252A

Other languages

English (en)

Other versions

NO971252L (no

Inventor

Kazuhiro Hanazawa

Masamichi Abe

Hiroyuki Baba

Naomichi Nakamura

Noriyoshi Yuge

Yasuhiko Sakaguchi

Yoshiei Kato

Fukuo Aratani

Original Assignee

Kawasaki Steel Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1996-03-19

Filing date

1997-03-18

Publication date

1997-03-18

1996-10-30 Priority claimed from JP28822096A external-priority patent/JPH09309716A/ja

1996-12-26 Priority claimed from JP34796196A external-priority patent/JPH10182132A/ja

1997-03-18 Application filed by Kawasaki Steel Co filed Critical Kawasaki Steel Co

1997-03-18 Publication of NO971252D0 publication Critical patent/NO971252D0/no

1997-09-22 Publication of NO971252L publication Critical patent/NO971252L/no

Classifications

- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Inorganic Chemistry (AREA)
Silicon Compounds (AREA)

NO971252A 1996-03-19 1997-03-18 Fremgangsmåte og apparatur for raffinering av silisium NO971252L (no)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP6331996		1996-03-19
JP28822096A JPH09309716A (ja)	1996-03-19	1996-10-30	シリコンの精製方法
JP34796196A JPH10182132A (ja)	1996-12-26	1996-12-26	シリコンの精製方法および精製装置

Publications (2)

Publication Number	Publication Date
NO971252D0 true NO971252D0 (no)	1997-03-18
NO971252L NO971252L (no)	1997-09-22

Family

ID=27298127

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NO971252A NO971252L (no)	1996-03-19	1997-03-18	Fremgangsmåte og apparatur for raffinering av silisium

Country Status (7)

Country	Link
US (1)	US6231826B1 (no)
EP (1)	EP0796820B1 (no)
CN (1)	CN1167728A (no)
BR (1)	BR9701330A (no)
CA (1)	CA2200166C (no)
DE (1)	DE69702555T2 (no)
NO (1)	NO971252L (no)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP1254861B1 (en) *	2000-12-28	2008-01-30	Sumco Corporation	Silicon continuous casting method
AU2003277041A1 (en) *	2002-09-27	2004-04-19	Astropower, Inc.	Methods and systems for purifying elements
CN100457615C (zh) *	2003-12-04	2009-02-04	陶氏康宁公司	从冶金级硅中去除杂质以制得太阳能级硅的方法
JP4826936B2 (ja) *	2004-06-03	2011-11-30	株式会社アイアイエスマテリアル	電子ビームを用いたスクラップシリコンの精錬方法
JP2005343780A (ja) *	2004-06-03	2005-12-15	Iis Materials:Kk	スクラップシリコンのリサイクル方法
JP4947455B2 (ja) *	2005-08-16	2012-06-06	則近山内	電子ビームを用いたシリコンの精錬方法及び装置
US7955433B2 (en) *	2007-07-26	2011-06-07	Calisolar, Inc.	Method and system for forming a silicon ingot using a low-grade silicon feedstock
JP5311930B2 (ja) *	2007-08-29	2013-10-09	住友化学株式会社	シリコンの製造方法
US7572425B2 (en) *	2007-09-14	2009-08-11	General Electric Company	System and method for producing solar grade silicon
CN101219789B (zh) *	2007-09-29	2010-06-16	北京航空航天大学	高能束流多晶硅提纯装置
CN101391773B (zh) *	2008-04-15	2011-01-12	南安市三晶阳光电力有限公司	弥散气体导入金属硅提纯法
WO2010013484A1 (ja)	2008-08-01	2010-02-04	株式会社アルバック	金属の精製方法
KR101318239B1 (ko) *	2008-08-12	2013-10-15	가부시키가이샤 아루박	실리콘의 정제 방법
CN102123945B (zh) *	2008-08-15	2013-08-07	株式会社爱发科	硅精制方法
US7998224B2 (en) *	2008-10-21	2011-08-16	Varian Semiconductor Equipment Associates, Inc.	Removal of a sheet from a production apparatus
CN101565184B (zh) *	2009-05-22	2011-12-07	宜昌南玻硅材料有限公司	一种多晶硅生产用氢化炉装置内电极密封的方法及装置
US8475540B2 (en) *	2009-08-12	2013-07-02	Sri International	Multi-stage system for reaction and melt coalescence and separation
CN101708849B (zh) *	2009-11-19	2012-08-01	大连理工大学	局部蒸发去除多晶硅中硼的方法及装置
CN101708850B (zh) *	2009-11-19	2011-09-14	大连理工大学	连续熔炼去除多晶硅中磷和硼的方法及装置
CN102126725B (zh) *	2011-01-29	2012-12-19	大连隆田科技有限公司	一种电子束浅熔池熔炼提纯多晶硅的方法及设备
CN102120579B (zh) *	2011-01-29	2012-10-03	大连隆田科技有限公司	一种电子束高效、连续熔炼提纯多晶硅的方法及设备
DE102013107685B3 (de) *	2013-07-18	2014-09-18	Ald Vacuum Technologies Gmbh	Vorrichtung und Verfahren zum sequentiellen Schmelzen und Raffinieren in einem kontinuierlichen Verfahren
CN104651929B (zh) *	2013-11-22	2018-08-21	青岛昌盛日电太阳能科技股份有限公司	一种电子束熔炼多晶硅除氧与铸锭耦合的方法及设备
CN104131338B (zh) *	2014-07-17	2016-08-24	大连理工大学	电子束顶部局部加热凝固多晶硅除杂装置及多晶硅加热凝固除杂方法
CN108128779B (zh) *	2018-01-30	2020-05-19	青岛蓝光晶科新材料有限公司	一种去除多晶硅中碳、氮杂质的方法
WO2021158696A1 (en) *	2020-02-03	2021-08-12	Nuburu, Inc.	Long lifetime laser diode packaging

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4298423A (en)	1976-12-16	1981-11-03	Semix Incorporated	Method of purifying silicon
JPS54107884A (en)	1978-02-14	1979-08-24	Toshiba Corp	Vacuum depositing method for silicon
US4668493A (en)	1982-06-22	1987-05-26	Harry Levin	Process for making silicon
DE3241366A1 (de)	1982-11-09	1984-05-10	Siemens AG, 1000 Berlin und 8000 München	Verfahren zum herstellen von fuer halbleiterbauelemente, insbesondere solarzellen, verwendbarem silicium
DE3403131A1 (de)	1984-01-30	1985-08-01	Siemens AG, 1000 Berlin und 8000 München	Verfahren zum reinigen von im lichtbogenofen erzeugtem silicium
DE3635064A1 (de)	1986-10-15	1988-04-21	Bayer Ag	Verfahren zur raffination von silicium und derart gereinigtes silicium
US4789506A (en)	1986-11-07	1988-12-06	Gas Research Institute	Method of producing tubular ceramic articles
DE3806001A1 (de)	1988-02-25	1989-09-07	Siemens Ag	Anordnung zum vollstaendigen entleeren von mit siliziumschmelze gefuellten quarzwannen oder -tiegeln nach dem siliziumbandziehen
JPH03215661A (ja)	1990-01-19	1991-09-20	Seiko Instr Inc	イオンプレーティング装置
DE4111190A1 (de)	1991-04-06	1992-10-08	Hoechst Ceram Tec Ag	Kohlenstoffkoerper mit siliziumkarbid-beschichtung und verfahren zu ihrer herstellung
US5220804A (en)	1991-12-09	1993-06-22	Isothermal Systems Research, Inc	High heat flux evaporative spray cooling
US5431869A (en)	1993-01-12	1995-07-11	Council Of Scientific & Industrial Research	Process for the preparation of polycrystalline silicon ingot
JPH06280004A (ja)	1993-03-24	1994-10-04	Japan Steel Works Ltd:The	電子ビーム蒸発源
JPH06345416A (ja) *	1993-06-02	1994-12-20	Kawasaki Steel Corp	電子ビーム溶解によるシリコンの精錬方法
JPH0717704A (ja) *	1993-06-24	1995-01-20	Kawasaki Steel Corp	電子ビーム溶解によるシリコンの精錬方法
JPH07309614A (ja) *	1994-03-24	1995-11-28	Kawasaki Steel Corp	シリコンの精製方法
JP3140300B2 (ja) *	1994-03-29	2001-03-05	川崎製鉄株式会社	シリコンの精製方法および精製装置

1997
- 1997-03-13 EP EP97104299A patent/EP0796820B1/en not_active Expired - Lifetime
- 1997-03-13 DE DE69702555T patent/DE69702555T2/de not_active Expired - Fee Related
- 1997-03-17 CA CA002200166A patent/CA2200166C/en not_active Expired - Fee Related
- 1997-03-18 BR BR9701330A patent/BR9701330A/pt not_active Application Discontinuation
- 1997-03-18 CN CN97111213A patent/CN1167728A/zh active Pending
- 1997-03-18 NO NO971252A patent/NO971252L/no not_active Application Discontinuation
1999
- 1999-09-08 US US09/391,564 patent/US6231826B1/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
US6231826B1 (en)	2001-05-15
CA2200166C (en)	2002-01-22
CN1167728A (zh)	1997-12-17
DE69702555T2 (de)	2000-11-23
EP0796820A1 (en)	1997-09-24
CA2200166A1 (en)	1997-09-19
DE69702555D1 (de)	2000-08-24
BR9701330A (pt)	1998-11-10
NO971252L (no)	1997-09-22
EP0796820B1 (en)	2000-07-19

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Legal Events

Date	Code	Title	Description
2005-10-17	FC2A	Withdrawal, rejection or dismissal of laid open patent application