NO894800L - Fremgangsmaate ved fremstilling av silisiumkarbid-plater. - Google Patents
Fremgangsmaate ved fremstilling av silisiumkarbid-plater.Info
- Publication number
- NO894800L NO894800L NO89894800A NO894800A NO894800L NO 894800 L NO894800 L NO 894800L NO 89894800 A NO89894800 A NO 89894800A NO 894800 A NO894800 A NO 894800A NO 894800 L NO894800 L NO 894800L
- Authority
- NO
- Norway
- Prior art keywords
- weight
- silica
- platelets
- carbon
- less
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 10
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 3
- 229910052799 carbon Inorganic materials 0.000 abstract 3
- 239000002245 particle Substances 0.000 abstract 3
- RHZUVFJBSILHOK-UHFFFAOYSA-N anthracen-1-ylmethanolate Chemical compound C1=CC=C2C=C3C(C[O-])=CC=CC3=CC2=C1 RHZUVFJBSILHOK-UHFFFAOYSA-N 0.000 abstract 2
- 239000003830 anthracite Substances 0.000 abstract 2
- 229910052742 iron Inorganic materials 0.000 abstract 2
- 239000002243 precursor Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 239000003245 coal Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910021385 hard carbon Inorganic materials 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000002787 reinforcement Effects 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Inorganic Fibers (AREA)
- Catalysts (AREA)
- Ceramic Products (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA584657 | 1988-12-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NO894800D0 NO894800D0 (no) | 1989-11-30 |
| NO894800L true NO894800L (no) | 1990-06-05 |
Family
ID=4139206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO89894800A NO894800L (no) | 1988-12-01 | 1989-11-30 | Fremgangsmaate ved fremstilling av silisiumkarbid-plater. |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US5080879A (no) |
| EP (1) | EP0371770B1 (no) |
| JP (1) | JPH02263797A (no) |
| AT (1) | ATE93282T1 (no) |
| AU (1) | AU621958B2 (no) |
| BR (1) | BR8906106A (no) |
| DE (1) | DE68908534T2 (no) |
| DK (1) | DK604889A (no) |
| NO (1) | NO894800L (no) |
| ZA (1) | ZA899213B (no) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5173283A (en) * | 1990-10-01 | 1992-12-22 | Alcan International Limited | Platelets for producing silicon carbide platelets and the platelets so-produced |
| US5258170A (en) * | 1990-10-01 | 1993-11-02 | Alcan International Limited | Process for producing silicon carbide platelets |
| JP3769739B2 (ja) * | 1994-11-17 | 2006-04-26 | 住友電気工業株式会社 | 多孔質セラミックス膜及びその製造方法 |
| US5884871A (en) * | 1997-03-27 | 1999-03-23 | Boeing North American, Inc. | Use of absorbing walls for laminar flow control |
| DE10113918C2 (de) * | 2001-03-07 | 2003-04-24 | Becorit Gmbh | Gesinterte anorganische Granulate und Formkörper auf Basis von Kohlenstoff und/oder Molybdänverbindungen in einer keramischen Matrix, deren Herstellung sowie deren Verwendung |
Family Cites Families (57)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8178C (no) * | 1919-07-10 | |||
| US2799912A (en) * | 1950-12-18 | 1957-07-23 | Greger Herbert Hans | Processes for forming high temperature ceramic articles |
| US2797201A (en) * | 1953-05-11 | 1957-06-25 | Standard Oil Co | Process of producing hollow particles and resulting product |
| US2860509A (en) * | 1954-10-18 | 1958-11-18 | Star Recorder Corp Of Denver | Recording apparatus for earth bore drilling |
| FR1175273A (fr) * | 1957-05-16 | 1959-03-23 | Pechiney | Four pour la production continue de nitrure d'aluminium |
| LU39124A1 (no) * | 1959-09-03 | |||
| US3271109A (en) * | 1963-04-11 | 1966-09-06 | Pittsburgh Plate Glass Co | Pigmentary silicon carbide |
| US3436179A (en) * | 1964-07-27 | 1969-04-01 | Tokyo Shibaura Electric Co | Method of preparing sintered masses of aluminum nitride |
| CH476499A (de) * | 1964-12-31 | 1969-08-15 | Ciba Geigy | Mischung zum Überziehen von Rektal-Kapseln |
| US3615972A (en) * | 1967-04-28 | 1971-10-26 | Dow Chemical Co | Expansible thermoplastic polymer particles containing volatile fluid foaming agent and method of foaming the same |
| US3840647A (en) * | 1969-01-24 | 1974-10-08 | Suwa Seikosha Kk | Method for producing whiskers |
| US3873475A (en) * | 1971-09-01 | 1975-03-25 | Minnesota Mining & Mfg | Composition for filling, patching and the like |
| US3914360A (en) * | 1973-04-23 | 1975-10-21 | Dow Chemical Co | Expansion of expandable synthetic resinous microspheres |
| US4190439A (en) * | 1973-12-28 | 1980-02-26 | Union Carbide Corporation | Process for the preparation of fine grain metal carbide powders and sintered articles therefrom |
| DE2518950A1 (de) * | 1974-05-20 | 1975-12-04 | Gen Electric | Gesintertes siliziumkarbidpulver und verfahren zu dessen herstellung |
| US4104345A (en) * | 1975-06-23 | 1978-08-01 | International Business Machines Corporation | Ceramic dielectrics |
| GB1535471A (en) * | 1976-02-26 | 1978-12-13 | Toyo Boseki | Process for preparation of a metal carbide-containing moulded product |
| JPS5492629A (en) * | 1977-12-28 | 1979-07-23 | Yashima Kagaku Kogyo Kk | Herbicide for rice field |
| JPS5515946A (en) * | 1978-07-19 | 1980-02-04 | Toray Ind Inc | Production of metal nitride fine powder |
| US4256676A (en) * | 1978-11-22 | 1981-03-17 | Kovach Julius L | Process for preparing porous metal oxide beads |
| JPS5927743B2 (ja) * | 1979-02-28 | 1984-07-07 | 旭硝子株式会社 | セラミック紛未の成形品の処理方法 |
| JPS55159946A (en) * | 1979-05-31 | 1980-12-12 | Matsushita Electric Works Ltd | Forming method for heat-insulating material |
| US4247500A (en) * | 1979-12-07 | 1981-01-27 | Bell Telephone Laboratories, Incorporated | Fabrication of ferrite material |
| US4284612A (en) * | 1980-01-28 | 1981-08-18 | Great Lakes Carbon Corporation | Preparation of SiC whiskers |
| US4327192A (en) * | 1980-10-06 | 1982-04-27 | The United States Of America As Represented By The United States Department Of Energy | Method of fabricating nested shells and resulting product |
| JPS5857392B2 (ja) * | 1980-10-22 | 1983-12-20 | 日立化成工業株式会社 | アルミニウム微粉末被覆炭化珪素粉末の製造方法 |
| JPS5771869A (en) * | 1980-10-22 | 1982-05-04 | Hitachi Chemical Co Ltd | Sinterable silicon carbide powder composition and manufacture of silicon carbide sintered body |
| DE3105556A1 (de) * | 1981-02-16 | 1982-09-02 | Henkel KGaA, 4000 Düsseldorf | "verbessertes verfahren zur herstellung von xanthomonas-biopolymeren" |
| JPS589807A (ja) * | 1981-07-10 | 1983-01-20 | Showa Denko Kk | 高純度ＳｉＣの製造法 |
| JPS58204812A (ja) * | 1982-05-22 | 1983-11-29 | Central Glass Co Ltd | 炭素含有ＳｉＣ粉末の製造法 |
| EP0111008B1 (en) * | 1982-06-01 | 1989-12-27 | MITSUI TOATSU CHEMICALS, Inc. | Process for manufacturing metal carbides and their precursors |
| JPS6052120B2 (ja) * | 1982-06-04 | 1985-11-18 | タテホ化学工業株式会社 | 炭化珪素の製造方法 |
| US4900531A (en) * | 1982-06-22 | 1990-02-13 | Harry Levin | Converting a carbon preform object to a silicon carbide object |
| DE3347862C2 (no) * | 1982-09-17 | 1988-05-11 | Tokuyama Soda K.K., Tokuyama, Yamaguchi, Jp | |
| DD242325A3 (de) * | 1983-05-27 | 1987-01-28 | Reiner Kinder | Verfahren zur herstellung hochporoeser mineralischer koerper mit polyformer struktur |
| US4536379A (en) * | 1983-06-02 | 1985-08-20 | Graphite Sales, Inc. | Production of silicon carbide |
| DD224886A1 (de) * | 1983-06-30 | 1985-07-17 | Univ Dresden Tech | Verfahren zur zuechtung von siliciumcarbid-einkristallen |
| US4591197A (en) * | 1983-09-27 | 1986-05-27 | Ava International Corp. | Wire line running and/or pulling tool |
| JPS6081064A (ja) * | 1983-10-13 | 1985-05-09 | ティーディーケイ株式会社 | 炭化ケイ素焼結体の製造方法 |
| JPS60176910A (ja) * | 1984-02-22 | 1985-09-11 | Tokuyama Soda Co Ltd | 窒化アルミニウム粉末の製造方法 |
| FR2565964A1 (fr) * | 1984-06-13 | 1985-12-20 | Lafarge Refractaires | Nouveaux refractaires a haute teneur en alumine et leur procede d'obtention |
| GB2162504B (en) * | 1984-07-17 | 1988-05-18 | Nippon Light Metal Co | Process for continuous reaction furnace for production of b-type silicon carbide whiskers |
| DE3572155D1 (en) * | 1984-09-28 | 1989-09-14 | Toshiba Kk | Process for production of readily sinterable aluminum nitride powder |
| JPS61155210A (ja) * | 1984-12-28 | 1986-07-14 | Toshiba Corp | 易焼結性窒化アルミニウム粉末の製造方法 |
| JPS61201606A (ja) * | 1985-03-05 | 1986-09-06 | Chuzo Kato | 無機有機高分子複合体より窒化物および炭化物の製造方法 |
| US4702900A (en) * | 1985-04-08 | 1987-10-27 | Bridgestone Corporation | Method of producing silicon carbide |
| US4659022A (en) * | 1985-04-10 | 1987-04-21 | Kennecott Corporation | Production of silicon carbide with automatic separation of a high grade fraction |
| US4606902A (en) * | 1985-10-03 | 1986-08-19 | The United States Of America As Represented By The Secretary Of Commerce | Process for preparing refractory borides and carbides |
| JPS62167209A (ja) * | 1986-01-17 | 1987-07-23 | Natl Inst For Res In Inorg Mater | α−サイアロン質粉末及びその製造法 |
| JPS62223009A (ja) * | 1986-03-20 | 1987-10-01 | Ube Ind Ltd | α−サイアロン粉末の製法 |
| US4784839A (en) * | 1986-04-03 | 1988-11-15 | Atochem | Method of making metal carbide and nitride powders |
| US4756895A (en) * | 1986-08-22 | 1988-07-12 | Stemcor Corporation | Hexagonal silicon carbide platelets and preforms and methods for making and using same |
| KR910001300B1 (ko) * | 1986-11-28 | 1991-03-02 | 가와사키세이데쓰 가부시키가이샤 | 질화 알루미늄 분말의 제조방법 |
| US4686244A (en) * | 1986-12-17 | 1987-08-11 | Dow Corning Corporation | Intumescent foamable compositions |
| US4906324A (en) * | 1987-07-31 | 1990-03-06 | American Matrix, Inc. | Method for the preparation of silicon carbide platelets |
| US4784939A (en) * | 1987-09-02 | 1988-11-15 | Minnesota Mining And Manufacturing Company | Photothermographic elements |
| US4857246A (en) * | 1988-01-21 | 1989-08-15 | E. I. Du Pont De Nemours And Company | Aluminum nitride articles by carbothermal nitridation |
-
1989
- 1989-11-24 US US07/440,788 patent/US5080879A/en not_active Expired - Lifetime
- 1989-11-29 AT AT89312383T patent/ATE93282T1/de active
- 1989-11-29 EP EP89312383A patent/EP0371770B1/en not_active Expired - Lifetime
- 1989-11-29 DE DE89312383T patent/DE68908534T2/de not_active Expired - Fee Related
- 1989-11-30 AU AU45663/89A patent/AU621958B2/en not_active Ceased
- 1989-11-30 DK DK604889A patent/DK604889A/da not_active Application Discontinuation
- 1989-11-30 NO NO89894800A patent/NO894800L/no unknown
- 1989-12-01 ZA ZA899213A patent/ZA899213B/xx unknown
- 1989-12-01 BR BR898906106A patent/BR8906106A/pt unknown
- 1989-12-01 JP JP1314116A patent/JPH02263797A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DK604889A (da) | 1990-06-02 |
| US5080879A (en) | 1992-01-14 |
| EP0371770A2 (en) | 1990-06-06 |
| DK604889D0 (da) | 1989-11-30 |
| DE68908534T2 (de) | 1993-12-02 |
| ZA899213B (en) | 1990-09-26 |
| AU621958B2 (en) | 1992-03-26 |
| AU4566389A (en) | 1990-06-07 |
| EP0371770A3 (en) | 1990-08-22 |
| BR8906106A (pt) | 1990-07-31 |
| NO894800D0 (no) | 1989-11-30 |
| DE68908534D1 (de) | 1993-09-23 |
| ATE93282T1 (de) | 1993-09-15 |
| EP0371770B1 (en) | 1993-08-18 |
| JPH02263797A (ja) | 1990-10-26 |
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