[go: up one dir, main page]

NO20055967L - Fremgangsmate for fremstilling av et komposittmateriale - Google Patents

Fremgangsmate for fremstilling av et komposittmateriale

Info

Publication number
NO20055967L
NO20055967L NO20055967A NO20055967A NO20055967L NO 20055967 L NO20055967 L NO 20055967L NO 20055967 A NO20055967 A NO 20055967A NO 20055967 A NO20055967 A NO 20055967A NO 20055967 L NO20055967 L NO 20055967L
Authority
NO
Norway
Prior art keywords
layer
preparing
composite material
compound
vapor
Prior art date
Application number
NO20055967A
Other languages
English (en)
Inventor
Jahromi Shahab
Original Assignee
Dsm Ip Assets Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dsm Ip Assets Bv filed Critical Dsm Ip Assets Bv
Publication of NO20055967L publication Critical patent/NO20055967L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/20—Metallic material, boron or silicon on organic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

Oppfinnelsen vedrører en fremgangsmåte for fremstilling av et komposittmateriale som omfatter et subsfrat, et første lag og et andre lag, omfattende ¿ et første dampdeponerende trinn, hvori en første forbindelse dampdeponeres på subsfratet hvorved det første laget dannes, og ¿ et andre dampdeponerende trinn, hvori en andre forbindelse omfattende en triazinforbindelse dampdeponeres på det første laget hvorved det andre laget dannes, hvorved de første og andre dampdeponerende trinnene utføres på en slik måte at det første laget omfatter mellom 0 vektprosent og 10 vektprosent av en triazinforbindelse.
NO20055967A 2003-05-15 2005-12-15 Fremgangsmate for fremstilling av et komposittmateriale NO20055967L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL0300361 2003-05-15
PCT/NL2004/000312 WO2004101843A1 (en) 2003-05-15 2004-05-10 Process for the preparation of a composite material

Publications (1)

Publication Number Publication Date
NO20055967L true NO20055967L (no) 2006-01-31

Family

ID=33448406

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20055967A NO20055967L (no) 2003-05-15 2005-12-15 Fremgangsmate for fremstilling av et komposittmateriale

Country Status (14)

Country Link
US (1) US20070184187A1 (no)
EP (1) EP1623053A1 (no)
JP (1) JP2007503529A (no)
KR (1) KR20060003097A (no)
CN (1) CN100545298C (no)
AR (1) AR044333A1 (no)
BR (1) BRPI0410284A (no)
CA (1) CA2525715A1 (no)
CL (1) CL2004001061A1 (no)
NO (1) NO20055967L (no)
PE (1) PE20050427A1 (no)
RU (1) RU2353476C2 (no)
TW (1) TW200506078A (no)
WO (1) WO2004101843A1 (no)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4826114B2 (ja) * 2004-12-24 2011-11-30 凸版印刷株式会社 無機酸化物蒸着層及び保護層を有するガスバリア基材フィルム
BRPI0713896A2 (pt) * 2006-07-07 2012-11-20 Dsm Ip Assets Bv produtos retardantes de chama
EA200900973A1 (ru) * 2007-01-11 2009-12-30 ДСМ АйПи АССЕТС Б.В. Субстраты, обладающие барьерными свойствами в условиях высокой влажности
EP1995059A1 (en) 2007-05-24 2008-11-26 DSM IP Assets B.V. Substrates with barrier properties at high humidity
EP2036716A1 (en) * 2007-07-20 2009-03-18 DSMIP Assets B.V. A laminate and composite layer comprising a substrate and a coating, and a process for preparation thereof
KR101024353B1 (ko) * 2007-09-11 2011-03-23 (주)휴넷플러스 유기 전자 소자 및 그 제조방법
KR20100069652A (ko) * 2007-10-18 2010-06-24 가부시키가이샤 알박 수지제 기재에의 금속 장식막의 적층 방법 및 금속 장식막을 구비한 수지제 기재
EP2296876A1 (en) * 2008-07-10 2011-03-23 DSM IP Assets B.V. Barrier layers. its uses and a process for preparation thereof
JP6225573B2 (ja) 2013-02-06 2017-11-08 東洋紡株式会社 積層フィルム
JP6056521B2 (ja) 2013-02-06 2017-01-11 東洋紡株式会社 ガスバリアフィルム
WO2017100388A1 (en) * 2015-12-11 2017-06-15 Sabic Global Technologies B.V. Method of additive manufacturing to improve interlayer adhesion
KR101912033B1 (ko) 2017-02-13 2018-10-25 연세대학교 산학협력단 Fpga 기반의 온도 센싱 장치 및 센싱 방법
EP4242255A1 (en) 2022-03-09 2023-09-13 Knowfort Holding B.V. Printable substrates with barrier properties

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2340995A1 (fr) * 1976-02-16 1977-09-09 Fuji Photo Film Co Ltd Procede de fabrication d'un materiau en feuille comportant une couche metallique deposee sous vide, et procede de fabrication d'un materiau d'enregistrement
US4327141A (en) * 1977-01-10 1982-04-27 Nevamar Corporation Abrasion-resistant laminate
US4567087A (en) * 1983-06-28 1986-01-28 Nevamar Corporation Scuff resistance in abrasion-resistant laminates
CN1007847B (zh) * 1984-12-24 1990-05-02 住友特殊金属株式会社 制造具有改进耐蚀性磁铁的方法
JPS63116314A (ja) * 1986-11-05 1988-05-20 三菱レイヨン株式会社 透明性に優れた導電性高分子樹脂材料の製造法
US5266384A (en) * 1991-07-18 1993-11-30 Nevamar Corporation Aesthetic surface layer
MY132134A (en) * 1995-03-14 2007-09-28 Daicel Chem Barrier composite films and a method for producing the same
JPH1076593A (ja) * 1996-09-03 1998-03-24 Daicel Chem Ind Ltd バリア性複合フィルムおよびその製造方法
NL1009405C2 (nl) * 1998-06-15 1999-12-16 Dsm Nv Object omvattende een drager en een zich op de drager bevindende laag.
DE19917076A1 (de) * 1999-04-15 2000-10-19 Fraunhofer Ges Forschung Verfahren zur Herstellung von Verbunden, Verbunde sowie Verwendung derartiger Verbunde
CA2366953A1 (en) * 1999-04-15 2000-10-26 Ulrich Moosheimer Release layer, method for producing the same and its use
DE19935181C5 (de) * 1999-07-27 2004-05-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Schutz eines vakuumtechnisch bearbeiteten Substrates und Verwendung des Verfahrens

Also Published As

Publication number Publication date
EP1623053A1 (en) 2006-02-08
PE20050427A1 (es) 2005-08-06
CN1791700A (zh) 2006-06-21
BRPI0410284A (pt) 2006-05-16
RU2005139139A (ru) 2006-05-10
WO2004101843A1 (en) 2004-11-25
JP2007503529A (ja) 2007-02-22
TW200506078A (en) 2005-02-16
CN100545298C (zh) 2009-09-30
AR044333A1 (es) 2005-09-07
CA2525715A1 (en) 2004-11-25
CL2004001061A1 (es) 2005-04-29
US20070184187A1 (en) 2007-08-09
HK1093085A1 (zh) 2007-02-23
KR20060003097A (ko) 2006-01-09
RU2353476C2 (ru) 2009-04-27

Similar Documents

Publication Publication Date Title
NO20055967L (no) Fremgangsmate for fremstilling av et komposittmateriale
NO20055966L (no) Fremgangsmate for fremstilling av et komposittmateriale
WO2003064059A3 (en) Integration of titanium and titanium nitride layers
WO2004020691A3 (en) Systems and methods for forming zirconium and/or hafnium-containing layers
TW200616014A (en) Method for manufacturing compound material wafers
CY1109426T1 (el) Κεραμικη συνθετη επενδυση τοιχου
TW200717709A (en) A method for forming a ruthenium metal layer on a patterned substrate
WO2005017962A3 (en) System and process for producing nanowire composites and electronic substrates therefrom
WO2003043073A3 (en) A method of depositing low k barrier layers
WO2003029515A3 (en) Formation of composite tungsten films
AU2003250772A8 (en) Optical variable element having a variable distance-layer thickness
TW200604093A (en) Silicon nitride film with stress control
WO2007008653A3 (en) Method for depositing silicon-containing films
DE60224061D1 (de) In-situ-ausgleich für eine phasenschiebemaske
WO2003031679A3 (en) Method for depositing metal layers employing sequential deposition techniques
AU2003250246A8 (en) Method for production of a glazed piece provided with a multi-layer coating
WO2005034195A3 (en) Growth of high-k dielectrics by atomic layer deposition
WO2006083769A3 (en) N2-based plasma treatment for porous low-k dielectric films
DE60314640D1 (de) Methoden zur abscheidung von atomschichten
TW200943393A (en) A semiconductor wafer with a heteroepitaxial layer and a method for producing the wafer
WO2010057652A8 (de) Nonodrähte auf substratoberflächen, verfahren zu deren herstellung sowie deren verwendung
ATE427558T1 (de) Atomschichtenabscheidungsverfahren und vorrichtung
EP1383176A4 (en) SEMICONDUCTOR LUMINESCENT ELEMENT CONTAINING GROUP III NITRIDE COMPOUND
WO2004110771A3 (de) Sicherheitselemente und sicherheitsmerkmale mit farbeffekten
TW200614560A (en) Method for producing a layer of a doped semiconductor material, and apparatus

Legal Events

Date Code Title Description
FC2A Withdrawal, rejection or dismissal of laid open patent application