NO20043049L - Organisk felteffekttransistor med et organisk dielektrikum - Google Patents
Organisk felteffekttransistor med et organisk dielektrikumInfo
- Publication number
- NO20043049L NO20043049L NO20043049A NO20043049A NO20043049L NO 20043049 L NO20043049 L NO 20043049L NO 20043049 A NO20043049 A NO 20043049A NO 20043049 A NO20043049 A NO 20043049A NO 20043049 L NO20043049 L NO 20043049L
- Authority
- NO
- Norway
- Prior art keywords
- organic
- field effect
- effect transistor
- insulating material
- dielectric
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B57/00—Other synthetic dyes of known constitution
- C09B57/008—Triarylamine dyes containing no other chromophores
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B69/00—Dyes not provided for by a single group of this subclass
- C09B69/10—Polymeric dyes; Reaction products of dyes with monomers or with macromolecular compounds
- C09B69/109—Polymeric dyes; Reaction products of dyes with monomers or with macromolecular compounds containing other specific dyes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
- H10K10/476—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure comprising at least one organic layer and at least one inorganic layer
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- H10P14/6342—
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- H10P14/683—
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- H10P14/687—
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/10—Definition of the polymer structure
- C08G2261/11—Homopolymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/10—Definition of the polymer structure
- C08G2261/12—Copolymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/31—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain
- C08G2261/314—Condensed aromatic systems, e.g. perylene, anthracene or pyrene
- C08G2261/3142—Condensed aromatic systems, e.g. perylene, anthracene or pyrene fluorene-based, e.g. fluorene, indenofluorene, or spirobifluorene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/31—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain
- C08G2261/316—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain bridged by heteroatoms, e.g. N, P, Si or B
- C08G2261/3162—Arylamines
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/32—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
- C08G2261/322—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed
- C08G2261/3223—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed containing one or more sulfur atoms as the only heteroatom, e.g. thiophene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/90—Applications
- C08G2261/92—TFT applications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
- H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/115—Polyfluorene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/151—Copolymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
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- H10P14/69393—
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- H10P14/69394—
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0130321A GB0130321D0 (en) | 2001-12-19 | 2001-12-19 | Electronic devices |
| GB0130451A GB0130451D0 (en) | 2001-12-20 | 2001-12-20 | Electronic devices |
| GB0220504A GB0220504D0 (en) | 2002-09-03 | 2002-09-03 | Electronic devices |
| PCT/GB2002/005248 WO2003052841A1 (en) | 2001-12-19 | 2002-11-21 | Organic field effect transistor with an organic dielectric |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO20043049L true NO20043049L (no) | 2004-07-15 |
Family
ID=27256358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20043049A NO20043049L (no) | 2001-12-19 | 2004-07-15 | Organisk felteffekttransistor med et organisk dielektrikum |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7029945B2 (no) |
| EP (3) | EP1459392B1 (no) |
| JP (3) | JP2005513788A (no) |
| KR (1) | KR100949304B1 (no) |
| AT (1) | ATE525757T1 (no) |
| AU (1) | AU2002343058A1 (no) |
| CA (1) | CA2469912A1 (no) |
| NO (1) | NO20043049L (no) |
| WO (1) | WO2003052841A1 (no) |
Families Citing this family (176)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004241528A (ja) * | 2003-02-05 | 2004-08-26 | Ricoh Co Ltd | 有機半導体装置及びそれを有する表示素子 |
| GB0303267D0 (en) * | 2003-02-13 | 2003-03-19 | Plastic Logic Ltd | Non lineur capacitors |
| US6950299B2 (en) | 2003-02-13 | 2005-09-27 | Plastic Logic Limited | Non-linear capacitors |
| US7361926B2 (en) * | 2003-06-27 | 2008-04-22 | Tdk Corporation | Field-effect transistor |
| KR100995451B1 (ko) * | 2003-07-03 | 2010-11-18 | 삼성전자주식회사 | 다층 구조의 게이트 절연막을 포함하는 유기 박막 트랜지스터 |
| JP4325479B2 (ja) * | 2003-07-17 | 2009-09-02 | セイコーエプソン株式会社 | 有機トランジスタの製造方法、アクティブマトリクス装置の製造方法、表示装置の製造方法および電子機器の製造方法 |
| JP2005072569A (ja) * | 2003-08-06 | 2005-03-17 | Mitsubishi Chemicals Corp | 有機電界効果トランジスタ |
| GB0318817D0 (en) * | 2003-08-11 | 2003-09-10 | Univ Cambridge Tech | Method of making a polymer device |
| DE10340608A1 (de) * | 2003-08-29 | 2005-03-24 | Infineon Technologies Ag | Polymerformulierung und Verfahren zur Herstellung einer Dielektrikumsschicht |
| JP2005079549A (ja) * | 2003-09-03 | 2005-03-24 | Victor Co Of Japan Ltd | 有機薄膜トランジスタ |
| JP2005136383A (ja) * | 2003-10-09 | 2005-05-26 | Canon Inc | 有機半導体素子、その製造方法および有機半導体装置 |
| US8450723B2 (en) * | 2003-11-04 | 2013-05-28 | Alcatel Lucent | Apparatus having an aromatic dielectric and an aromatic organic semiconductor including an alkyl chain |
| US7842942B2 (en) | 2003-11-28 | 2010-11-30 | Merck Patent Gmbh | Organic semiconducting layers |
| JP2005175386A (ja) * | 2003-12-15 | 2005-06-30 | Asahi Kasei Corp | 有機半導体素子 |
| JP2005191437A (ja) * | 2003-12-26 | 2005-07-14 | Ricoh Co Ltd | 半導体装置、その製造方法、および表示装置 |
| GB0400997D0 (en) | 2004-01-16 | 2004-02-18 | Univ Cambridge Tech | N-channel transistor |
| US7256436B2 (en) | 2004-03-30 | 2007-08-14 | Shin-Etsu Chemical Co., Ltd. | Thin-film field-effect transistors and making method |
| JP4449549B2 (ja) * | 2004-04-15 | 2010-04-14 | 日本電気株式会社 | 有橋環式炭化水素ラクトン構造を有する材料を用いた有機薄膜トランジスタとその製造方法 |
| US7372070B2 (en) * | 2004-05-12 | 2008-05-13 | Matsushita Electric Industrial Co., Ltd. | Organic field effect transistor and method of manufacturing the same |
| KR100560796B1 (ko) | 2004-06-24 | 2006-03-13 | 삼성에스디아이 주식회사 | 유기 박막트랜지스터 및 그의 제조방법 |
| KR100635567B1 (ko) * | 2004-06-29 | 2006-10-17 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그 제조 방법 |
| EP1648040B1 (en) * | 2004-08-31 | 2016-06-01 | Osaka University | Thin-layer chemical transistors and their manufacture |
| GB2418062A (en) | 2004-09-03 | 2006-03-15 | Seiko Epson Corp | An organic Field-Effect Transistor with a charge transfer injection layer |
| KR20070106976A (ko) * | 2004-09-14 | 2007-11-06 | 노오쓰웨스턴 유니버시티 | 카르보닐-관능화 티오펜 화합물 및 관련 장치 구조물 |
| JP4502382B2 (ja) * | 2004-11-02 | 2010-07-14 | キヤノン株式会社 | 有機トランジスタ |
| KR100669752B1 (ko) * | 2004-11-10 | 2007-01-16 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판표시장치 |
| KR101122231B1 (ko) * | 2004-12-17 | 2012-03-19 | 삼성전자주식회사 | 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법 |
| KR101142998B1 (ko) | 2004-12-20 | 2012-05-08 | 재단법인서울대학교산학협력재단 | 유기 절연막 및 유기 절연막을 포함하는 박막 트랜지스터표시판 및 그 제조 방법 |
| WO2006086082A2 (en) | 2004-12-23 | 2006-08-17 | Northwestern University | Siloxane-polymer dielectric compositions and related organic field-effect transistors |
| KR101086159B1 (ko) * | 2005-01-07 | 2011-11-25 | 삼성전자주식회사 | 불소계 고분자 박막을 포함하는 유기 박막 트랜지스터 |
| US20080164465A1 (en) | 2005-02-18 | 2008-07-10 | Koninklijke Philips Electronics, N.V. | Electronic Device |
| JP2006229053A (ja) * | 2005-02-18 | 2006-08-31 | Ricoh Co Ltd | 有機半導体層を有する電界効果型有機薄膜トランジスタ |
| US7619242B2 (en) * | 2005-02-25 | 2009-11-17 | Xerox Corporation | Celluloses and devices thereof |
| JP4450214B2 (ja) * | 2005-03-11 | 2010-04-14 | セイコーエプソン株式会社 | 有機薄膜トランジスタ、電子デバイスおよび電子機器 |
| JP4951868B2 (ja) * | 2005-03-18 | 2012-06-13 | 凸版印刷株式会社 | 薄膜トランジスタの製造方法 |
| WO2006100545A1 (en) * | 2005-03-23 | 2006-09-28 | Turkiye Sise Ve Cam Fabrikalari A.S. | Perylene imide/diimide based organic field effect transistors-ofets and a method of producing the same |
| JP2006269599A (ja) * | 2005-03-23 | 2006-10-05 | Sony Corp | パターン形成方法、有機電界効果型トランジスタの製造方法、及び、フレキシブルプリント回路板の製造方法 |
| US20060214154A1 (en) * | 2005-03-24 | 2006-09-28 | Eastman Kodak Company | Polymeric gate dielectrics for organic thin film transistors and methods of making the same |
| US20060231829A1 (en) * | 2005-04-13 | 2006-10-19 | Xerox Corporation | TFT gate dielectric with crosslinked polymer |
| US20060231908A1 (en) * | 2005-04-13 | 2006-10-19 | Xerox Corporation | Multilayer gate dielectric |
| US7935960B2 (en) * | 2005-05-12 | 2011-05-03 | Merck Patent Gmbh | Polyacene and semiconductor formulation |
| TW200703664A (en) * | 2005-05-31 | 2007-01-16 | Nat University Iwate Univ Inc | Organic thin film transistor |
| WO2007010425A1 (en) | 2005-07-19 | 2007-01-25 | Koninklijke Philips Electronics N.V. | Fluid analyser |
| KR101209046B1 (ko) * | 2005-07-27 | 2012-12-06 | 삼성디스플레이 주식회사 | 박막트랜지스터 기판과 박막트랜지스터 기판의 제조방법 |
| US7781757B2 (en) | 2005-08-24 | 2010-08-24 | Sanyo Electric Co., Ltd. | Organic semiconductor material, organic semiconductor element and field effect transistor using the same |
| TWI261361B (en) * | 2005-08-31 | 2006-09-01 | Ind Tech Res Inst | Organic thin-film transistor structure and method for fabricating the same is provided |
| US20080113520A1 (en) * | 2005-09-07 | 2008-05-15 | University Of Seoul Foundation Of Industry- Academic Cooperation | Method of Forming Organic Layer on Semiconductor Substrate |
| US20070075308A1 (en) | 2005-09-30 | 2007-04-05 | Florian Dotz | Active semiconductor devices |
| US7488834B2 (en) | 2005-09-30 | 2009-02-10 | Alcatel-Lucent Usa Inc. | Organic semiconductors |
| US7569415B2 (en) | 2005-09-30 | 2009-08-04 | Alcatel-Lucent Usa Inc. | Liquid phase fabrication of active devices including organic semiconductors |
| CN100511751C (zh) * | 2005-10-17 | 2009-07-08 | 中国科学院化学研究所 | 一种有机场效应晶体管及其制备方法 |
| KR100708720B1 (ko) * | 2005-10-19 | 2007-04-17 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판 표시 장치 |
| DE102005059608B4 (de) * | 2005-12-12 | 2009-04-02 | Polyic Gmbh & Co. Kg | Organisches elektronisches Bauelement mit verbesserter Spannungsstabilität und Verfahren zur Herstellung dazu |
| KR101213871B1 (ko) * | 2005-12-15 | 2012-12-18 | 엘지디스플레이 주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
| US7425723B2 (en) * | 2005-12-21 | 2008-09-16 | Xerox Corporation | Organic thin-film transistors |
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| US6207472B1 (en) | 1999-03-09 | 2001-03-27 | International Business Machines Corporation | Low temperature thin film transistor fabrication |
| JP2000275678A (ja) * | 1999-03-26 | 2000-10-06 | Matsushita Electric Ind Co Ltd | 薄膜半導体装置およびその製造方法 |
| EP1192676A1 (en) * | 1999-06-21 | 2002-04-03 | Cambridge University Technical Services Limited | Aligned polymers for an organic tft |
| DE60033012T2 (de) * | 1999-09-10 | 2007-09-13 | Koninklijke Philips Electronics N.V. | Leitende struktur basierend auf poly-3,4-alkendioxythiophen (pedot) und polystyrolsulfonsäure (pss) |
| JP2001094107A (ja) * | 1999-09-20 | 2001-04-06 | Hitachi Ltd | 有機半導体装置及び液晶表示装置 |
| CN100483774C (zh) | 1999-12-21 | 2009-04-29 | 造型逻辑有限公司 | 半导体器件及其形成方法 |
| GB0028867D0 (en) * | 2000-11-28 | 2001-01-10 | Avecia Ltd | Field effect translators,methods for the manufacture thereof and materials therefor |
| KR100961251B1 (ko) | 2001-10-01 | 2010-06-03 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 조성물, 전자 디바이스 및 전자 디바이스의 제조 방법 |
| DE10151036A1 (de) | 2001-10-16 | 2003-05-08 | Siemens Ag | Isolator für ein organisches Elektronikbauteil |
| US6946676B2 (en) | 2001-11-05 | 2005-09-20 | 3M Innovative Properties Company | Organic thin film transistor with polymeric interface |
| CN1157807C (zh) | 2001-11-09 | 2004-07-14 | 清华大学 | 一种有机薄膜场效应晶体管及其制备方法 |
| US6912473B2 (en) * | 2002-06-28 | 2005-06-28 | International Business Machines Corporation | Method for verifying cross-sections |
-
2002
- 2002-11-21 AU AU2002343058A patent/AU2002343058A1/en not_active Abandoned
- 2002-11-21 AT AT02779719T patent/ATE525757T1/de not_active IP Right Cessation
- 2002-11-21 KR KR1020047009392A patent/KR100949304B1/ko not_active Expired - Lifetime
- 2002-11-21 CA CA002469912A patent/CA2469912A1/en not_active Abandoned
- 2002-11-21 JP JP2003553638A patent/JP2005513788A/ja active Pending
- 2002-11-21 WO PCT/GB2002/005248 patent/WO2003052841A1/en not_active Ceased
- 2002-11-21 EP EP02779719A patent/EP1459392B1/en not_active Expired - Lifetime
- 2002-11-21 EP EP10004331A patent/EP2204861A1/en not_active Withdrawn
- 2002-11-21 EP EP10004332A patent/EP2207217A1/en not_active Withdrawn
- 2002-11-21 US US10/499,040 patent/US7029945B2/en not_active Expired - Lifetime
-
2004
- 2004-07-15 NO NO20043049A patent/NO20043049L/no unknown
-
2011
- 2011-05-16 JP JP2011109287A patent/JP5727294B2/ja not_active Expired - Lifetime
- 2011-05-16 JP JP2011109286A patent/JP5727293B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR20040063176A (ko) | 2004-07-12 |
| EP2207217A1 (en) | 2010-07-14 |
| US20050104058A1 (en) | 2005-05-19 |
| KR100949304B1 (ko) | 2010-03-23 |
| EP1459392A1 (en) | 2004-09-22 |
| JP2011243986A (ja) | 2011-12-01 |
| ATE525757T1 (de) | 2011-10-15 |
| EP1459392B1 (en) | 2011-09-21 |
| AU2002343058A1 (en) | 2003-06-30 |
| WO2003052841A1 (en) | 2003-06-26 |
| JP5727294B2 (ja) | 2015-06-03 |
| JP5727293B2 (ja) | 2015-06-03 |
| EP2204861A1 (en) | 2010-07-07 |
| JP2005513788A (ja) | 2005-05-12 |
| US7029945B2 (en) | 2006-04-18 |
| JP2011254075A (ja) | 2011-12-15 |
| CA2469912A1 (en) | 2003-06-26 |
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