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NO20043977L - Lesemetode og deteksjonsanordning - Google Patents

Lesemetode og deteksjonsanordning

Info

Publication number
NO20043977L
NO20043977L NO20043977A NO20043977A NO20043977L NO 20043977 L NO20043977 L NO 20043977L NO 20043977 A NO20043977 A NO 20043977A NO 20043977 A NO20043977 A NO 20043977A NO 20043977 L NO20043977 L NO 20043977L
Authority
NO
Norway
Prior art keywords
detection device
reading method
reading
detection
Prior art date
Application number
NO20043977A
Other languages
English (en)
Other versions
NO20043977D0 (no
NO324029B1 (no
Inventor
Christer Karlson
Niklas Lovgren
Richard Womack
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Priority to NO20043977A priority Critical patent/NO324029B1/no
Publication of NO20043977D0 publication Critical patent/NO20043977D0/no
Priority to CNA2005800398959A priority patent/CN101061550A/zh
Priority to EP05784116.5A priority patent/EP1797564B1/en
Priority to JP2007533413A priority patent/JP4785004B2/ja
Priority to PCT/NO2005/000347 priority patent/WO2006033581A1/en
Priority to US11/231,895 priority patent/US7345906B2/en
Publication of NO20043977L publication Critical patent/NO20043977L/no
Publication of NO324029B1 publication Critical patent/NO324029B1/no

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Analogue/Digital Conversion (AREA)
  • Geophysics And Detection Of Objects (AREA)
  • Inspection Of Paper Currency And Valuable Securities (AREA)
NO20043977A 2004-09-23 2004-09-23 Lesemetode og deteksjonsanordning NO324029B1 (no)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NO20043977A NO324029B1 (no) 2004-09-23 2004-09-23 Lesemetode og deteksjonsanordning
CNA2005800398959A CN101061550A (zh) 2004-09-23 2005-09-21 读取方法和感测装置
EP05784116.5A EP1797564B1 (en) 2004-09-23 2005-09-21 Read method and sensing device
JP2007533413A JP4785004B2 (ja) 2004-09-23 2005-09-21 読み出し方法および検出デバイス
PCT/NO2005/000347 WO2006033581A1 (en) 2004-09-23 2005-09-21 Read method and sensing device
US11/231,895 US7345906B2 (en) 2004-09-23 2005-09-22 Read method and sensing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20043977A NO324029B1 (no) 2004-09-23 2004-09-23 Lesemetode og deteksjonsanordning

Publications (3)

Publication Number Publication Date
NO20043977D0 NO20043977D0 (no) 2004-09-23
NO20043977L true NO20043977L (no) 2006-03-24
NO324029B1 NO324029B1 (no) 2007-07-30

Family

ID=35057633

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20043977A NO324029B1 (no) 2004-09-23 2004-09-23 Lesemetode og deteksjonsanordning

Country Status (6)

Country Link
US (1) US7345906B2 (no)
EP (1) EP1797564B1 (no)
JP (1) JP4785004B2 (no)
CN (1) CN101061550A (no)
NO (1) NO324029B1 (no)
WO (1) WO2006033581A1 (no)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
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US7280405B2 (en) * 2004-12-14 2007-10-09 Tower Semiconductor Ltd. Integrator-based current sensing circuit for reading memory cells
ITMI20060350A1 (it) * 2006-02-28 2007-09-01 St Microelectronics Srl Amplificatore di lettura con ridotta occupazione d'area per memorie a semiconduttore
EP1944763A1 (en) 2007-01-12 2008-07-16 STMicroelectronics S.r.l. Reading circuit and method for data storage system
CN102013268B (zh) * 2009-09-07 2013-07-10 上海宏力半导体制造有限公司 位线调整方法和单元、灵敏放大器
KR101079201B1 (ko) * 2010-02-26 2011-11-03 주식회사 하이닉스반도체 반도체 메모리 장치
US8760907B2 (en) * 2010-11-30 2014-06-24 Radiant Technologies, Inc. Analog memories utilizing ferroelectric capacitors
US8605521B2 (en) 2011-05-12 2013-12-10 Micron Technology, Inc. Sense amplifiers, memories, and apparatuses and methods for sensing a data state of a memory cell
KR102215359B1 (ko) * 2014-08-01 2021-02-15 삼성전자주식회사 비휘발성 메모리 장치와 그 센싱 방법
US10229726B2 (en) * 2015-06-23 2019-03-12 Palo Alto Research Center Incorporated Memory circuit for reading ferroeletric memory having gain element including feedback capacitor
US9886571B2 (en) 2016-02-16 2018-02-06 Xerox Corporation Security enhancement of customer replaceable unit monitor (CRUM)
US10978169B2 (en) 2017-03-17 2021-04-13 Xerox Corporation Pad detection through pattern analysis
JP2018160294A (ja) * 2017-03-22 2018-10-11 東芝メモリ株式会社 メモリデバイス
US10388335B2 (en) 2017-08-14 2019-08-20 Micron Technology, Inc. Sense amplifier schemes for accessing memory cells
US10446232B2 (en) * 2017-12-19 2019-10-15 Micron Technology, Inc. Charge separation for memory sensing
US10504576B2 (en) 2017-12-19 2019-12-10 Micron Technology, Inc. Current separation for memory sensing
US10446220B1 (en) * 2018-04-19 2019-10-15 Micron Technology, Inc. Sense amplifier with lower offset and increased speed
KR102670947B1 (ko) * 2018-08-17 2024-06-03 에스케이하이닉스 주식회사 반도체 메모리 장치, 이를 포함하는 반도체 시스템 및 전자 장치
CN110619108B (zh) * 2019-08-15 2021-04-30 北京大学 一种基于铁电存储器的神经网络电路及其控制方法
CN211698994U (zh) * 2019-08-16 2020-10-16 神盾股份有限公司 指纹感测装置
US10878899B1 (en) * 2019-09-27 2020-12-29 Intel Corporation Low voltage, low power sensing based on level shifting sensing circuit
CN111579891B (zh) * 2020-05-11 2021-02-26 北京理工大学 一种电量识别和刚度筛选的耦合式传感方法及其传感系统
KR102856969B1 (ko) * 2021-03-04 2025-09-09 에스케이하이닉스 주식회사 더블 센싱 동작을 수행하기 위한 비휘발성 메모리 장치
KR102732200B1 (ko) * 2023-05-16 2024-11-20 한국과학기술원 메모리 디바이스
CN118038941B (zh) * 2024-03-20 2025-01-07 北京超弦存储器研究院 感应放大器及其感测方法、存储装置及其数据读取方法、电子设备
CN118136073B (zh) * 2024-03-20 2025-01-07 北京超弦存储器研究院 存储装置及其数据读取方法、电子设备

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3610621B2 (ja) * 1994-11-11 2005-01-19 ソニー株式会社 不揮発性半導体メモリ装置
NO312699B1 (no) * 2000-07-07 2002-06-17 Thin Film Electronics Asa Adressering av minnematrise
NO20004236L (no) * 2000-08-24 2002-02-25 Thin Film Electronics Asa Ikke-flyktig passiv matriseinnretning og fremgangsmåte for utlesing av samme
NO312698B1 (no) * 2000-07-07 2002-06-17 Thin Film Electronics Asa Fremgangsmåte til å utföre skrive- og leseoperasjoner i en passiv matriseminne og apparat for å utföre fremgangsmåten
NO20004237L (no) * 2000-08-24 2002-02-25 Thin Film Electronics Asa Integrert deteksjonsforsterker
NO20010968A (no) 2001-02-26 2002-07-15 Thin Film Electronics Asa Ikke-destruktiv utlesing
US6522568B1 (en) * 2001-07-24 2003-02-18 Intel Corporation Ferroelectric memory and method for reading the same
US6611448B2 (en) * 2001-07-30 2003-08-26 Intel Corporation Ferroelectric memory and method for reading the same
NO20015879A (no) * 2001-11-30 2003-03-31 Thin Film Electronics Asa Fremgangsmåte til lesing av celler i en passiv matriseadresserbar innretning, samt innretning for utførelse av fremgangsmåten
US6646904B2 (en) 2001-12-21 2003-11-11 Intel Corporation Ferroelectric memory and method of reading the same
JP4088954B2 (ja) * 2002-03-04 2008-05-21 日本電気株式会社 半導体記憶装置の読み出し回路
US20030227809A1 (en) * 2002-06-05 2003-12-11 Schwartz Kurt S. Temperature-adjusted pre-charged reference for an integrated circuit 1T/1C ferroelectric memory
GB2390201A (en) * 2002-06-27 2003-12-31 Seiko Epson Corp Charge integrating sense amplifier
US6920060B2 (en) * 2002-08-14 2005-07-19 Intel Corporation Memory device, circuits and methods for operating a memory device
JP4216141B2 (ja) * 2002-08-27 2009-01-28 シャープ株式会社 電荷検出回路、および、その回路定数設計方法
NO320017B1 (no) 2003-03-26 2005-10-10 Thin Film Electronics Asa Deteksjonsforsterkersystemer og matriseadresserbar minneinnretning med ±n av disse
US6970371B1 (en) * 2004-05-17 2005-11-29 Texas Instruments Incorporated Reference generator system and methods for reading ferroelectric memory cells using reduced bitline voltages

Also Published As

Publication number Publication date
WO2006033581A9 (en) 2006-06-22
NO20043977D0 (no) 2004-09-23
JP2008513929A (ja) 2008-05-01
JP4785004B2 (ja) 2011-10-05
EP1797564A1 (en) 2007-06-20
US7345906B2 (en) 2008-03-18
CN101061550A (zh) 2007-10-24
US20060062042A1 (en) 2006-03-23
WO2006033581A1 (en) 2006-03-30
EP1797564B1 (en) 2013-12-25
EP1797564A4 (en) 2009-11-04
NO324029B1 (no) 2007-07-30

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