NO139688B - PROCEDURE FOR PREPARING THE POLYETHYLE WITH HIGH DENSITY FOR FILM FORMATION BY MELTING AND MECHANICAL HOMOGENIZATION - Google Patents
PROCEDURE FOR PREPARING THE POLYETHYLE WITH HIGH DENSITY FOR FILM FORMATION BY MELTING AND MECHANICAL HOMOGENIZATION Download PDFInfo
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- NO139688B NO139688B NO426972A NO426972A NO139688B NO 139688 B NO139688 B NO 139688B NO 426972 A NO426972 A NO 426972A NO 426972 A NO426972 A NO 426972A NO 139688 B NO139688 B NO 139688B
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- Prior art keywords
- silicon
- stated
- treatment
- carried out
- fluoride
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 14
- 238000002844 melting Methods 0.000 title claims description 7
- 230000008018 melting Effects 0.000 title claims description 7
- 230000015572 biosynthetic process Effects 0.000 title 1
- 238000000265 homogenisation Methods 0.000 title 1
- 239000010703 silicon Substances 0.000 claims description 46
- 229910052710 silicon Inorganic materials 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 8
- 150000002739 metals Chemical class 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052792 caesium Inorganic materials 0.000 claims description 4
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052716 thallium Inorganic materials 0.000 claims description 4
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000012298 atmosphere Substances 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 40
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- REYHXKZHIMGNSE-UHFFFAOYSA-M silver monofluoride Chemical compound [F-].[Ag+] REYHXKZHIMGNSE-UHFFFAOYSA-M 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 229940096017 silver fluoride Drugs 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- 239000011260 aqueous acid Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000004508 fractional distillation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29B—PREPARATION OR PRETREATMENT OF THE MATERIAL TO BE SHAPED; MAKING GRANULES OR PREFORMS; RECOVERY OF PLASTICS OR OTHER CONSTITUENTS OF WASTE MATERIAL CONTAINING PLASTICS
- B29B13/00—Conditioning or physical treatment of the material to be shaped
- B29B13/10—Conditioning or physical treatment of the material to be shaped by grinding, e.g. by triturating; by sieving; by filtering
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Extrusion Moulding Of Plastics Or The Like (AREA)
- Casting Or Compression Moulding Of Plastics Or The Like (AREA)
- Polyethers (AREA)
- Processes Of Treating Macromolecular Substances (AREA)
- Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
- Shaping By String And By Release Of Stress In Plastics And The Like (AREA)
Description
Fremgangsmåte for rensing av silisium. Process for purification of silicon.
Foreliggende oppfinnelse går ut på å oppnå rent silisium og angår spesielt en fremgangsmåte for rensing av urent silisium. The present invention aims to obtain pure silicon and relates in particular to a method for purifying impure silicon.
Det er for det første 'kjent å rense råsilisium som er oppnådd industrielt med en renhetsgrad av størrelsesordenen 95 Firstly, it is known to purify raw silicon which has been obtained industrially with a degree of purity of the order of 95
pst. eller mere, enten ved fraksjonert de-stillering av silisium i en aluminiumlegering, eller ved smelting av urent silisium i nærvær av kopper, eller ved oppløsning av visse av forurensningene i en vandig sur væske, f. eks. saltsyre, fluorhydrogensyre og/eller salpetersyre. Disse fremgangsmå- pst. or more, either by fractional distillation of silicon in an aluminum alloy, or by melting impure silicon in the presence of copper, or by dissolving certain of the impurities in an aqueous acid liquid, e.g. hydrochloric acid, hydrofluoric acid and/or nitric acid. These procedures
ter har dog den store ulempe at de ikke systematisk fjerner alle de forurensninger som vanlig er tilstede i urent silisium, deriblant i alminnelighet bor, jern, aluminium, kopper, titan, kalsium osv. ter, however, has the major disadvantage that they do not systematically remove all the contaminants that are usually present in impure silicon, including generally boron, iron, aluminium, copper, titanium, calcium, etc.
Det er videre kjent å fremstille ekstra rent silisium ved reduksjon og/eller ter-misk spalting av en gassformet, meget ren silisiumforbindelse, f. eks. triklorsilan. Denne fremgangsmåte som gjør det mulig It is also known to produce extra pure silicon by reduction and/or thermal decomposition of a gaseous, very pure silicon compound, e.g. trichlorosilane. This method makes it possible
å oppnå silisium med meget høy renhetsgrad, gjør det nødvendig å passere gjen-nom meget rene mellom-forbindelser og krever en omhyggelig og omstendelig gjen-nomførelse som dog er berettiget i de til-feller hvor det trenges silisium som betraktes som ekstra rent, spesielt for tbruk ved utførelse av meget følsomme appara- to obtain silicon with a very high degree of purity makes it necessary to pass through very clean intermediate compounds and requires a careful and laborious implementation which is however justified in cases where silicon which is considered extra pure is needed, especially for use in the construction of very sensitive apparatus
ter, f. eks. tol. a. transistorer. ter, e.g. toll a. transistors.
Foreliggende oppfinnelse går ut på The present invention is based on
en enkel og billig fremgangsmåte for rensing av råsilisium, som gjør det mulig å a simple and cheap method for purifying raw silicon, which makes it possible to
oppnå silisium hvis renhetsgrad er minst lik 99,95 pst., endog av størrelsesordenen 99,99 ± 0,005 pst. obtain silicon whose degree of purity is at least equal to 99.95 per cent, even of the order of magnitude 99.99 ± 0.005 per cent.
Oppfinnelsen går også ut på å oppnå praktisk talt rent silisium, hvis elektriske motstand er større enn flere ohm pr. cm, endog flere titals ohm pr. cm, og fortrinsvis mellom 5 og 50 ohm/cm. Et slikt silisium kan brukes tol. a. for fremstilling av sol-batterier. The invention also aims to obtain practically pure silicon, the electrical resistance of which is greater than several ohms per cm, even several tens of ohms per cm, and preferably between 5 and 50 ohm/cm. Such silicon can be used tol. a. for the production of solar batteries.
Andre formål med oppfinnelsen vil fremgå av den beskrivelse som nå skal gis. Other purposes of the invention will be apparent from the description that will now be given.
Fremgangsmåten for rensing av silisium i henhold til oppfinnelsen omfatter behandling av urent silisium med et fluo- The method for purifying silicon according to the invention comprises treatment of impure silicon with a fluo-
rid av minst ett av metallene sølv, cesium, rid of at least one of the metals silver, cesium,
bly, tallium, aluminium, kopper, kadmium, gallium, titan og sink, ved en temperatur mellom ca. 1.000° C og ca. 1.600° C. lead, thallium, aluminium, copper, cadmium, gallium, titanium and zinc, at a temperature between approx. 1,000° C and approx. 1,600° C.
Det har nemlig vist seg at hvis urent silisium, hvis elektriske motstand er la-vere enn f. eks. 0,05 ohm/cm og som tol. a. inneholder bor og en annen metallisk for-urensning, f. eks. jern, aluminium, kopper, titan og/eller kalsium osv., uten at denne liste skal betraktes som fullstendig, blir behandlet med fluoridet av minst ett av de metaller som er angitt ovenfor, vil det silisium som derved oppnås, etter at det er skilt fra den metallegering som dannes under behandlingen, ha en renhetsgrad som er høyere enn 99,95 pst., spesielt av størrelsesordenen 99,99 ± 0,005 pst., mens dets elektriske motstand i alminnelighet ligger mellom 5 og 40 ohm/cm. It has been shown that if impure silicon, whose electrical resistance is lower than, for example, 0.05 ohm/cm and as tol. a. contains boron and another metallic impurity, e.g. iron, aluminum, copper, titanium and/or calcium, etc., without this list being considered exhaustive, is treated with the fluoride of at least one of the metals listed above, the silicon thereby obtained, after it has been separated from the metal alloy formed during the treatment, have a degree of purity higher than 99.95 percent, especially of the order of 99.99 ± 0.005 percent, while its electrical resistance is generally between 5 and 40 ohm/cm.
Denne behandling tolir 1 henhold til oppfinnelsen fortrinsvis utført ved en temperatur som er høyere enn smeltetemperaturen for fluoridet, og kan dessuten være enten høyere enn smeltetemperaturen for silisium og, tol. a. ligge mellom ca. 1.450° C og ca. 1.600° C, eller under smeltetemperaturen for silisium og ligge mellom f. eks. ca. 1.000° C og ca. 1.400° C. This treatment toler 1 according to the invention is preferably carried out at a temperature which is higher than the melting temperature for the fluoride, and can also be either higher than the melting temperature for silicon and, tol. a. lie between approx. 1,450° C and approx. 1,600° C, or below the melting temperature for silicon and lie between e.g. about. 1,000° C and approx. 1,400° C.
Denne behandling blir forøvrig fortrinsvis utført under vakuum eller 1 en atmosfære av en inert gass, f. eks. bl. a. argon eller hydrogen. Incidentally, this treatment is preferably carried out under vacuum or in an atmosphere of an inert gas, e.g. p. a. argon or hydrogen.
I en spesiell utførelsesform for oppfinnelsen, 'blir behandlingen utført i nærvær av en viss mengde av minst ett av de samme metaller som danner de fluorider som er nevnt ovenfor og, fortrinsvis, av det samme metall som danner det fluorid som torukes. Vektsforholdet mellom fluorid og metall i de stoffer fluorid og metall, som da settes til det urene silisium, er i alminnelighet i dette tilfelle 0,05— 0,3, fortrinsvis av størrelsesorden ca. 0,2. In a particular embodiment of the invention, the treatment is carried out in the presence of a certain amount of at least one of the same metals that form the fluorides mentioned above and, preferably, of the same metal that forms the fluoride being treated. The weight ratio between fluoride and metal in the substances fluoride and metal, which is then added to the impure silicon, is generally in this case 0.05-0.3, preferably of the order of magnitude approx. 0.2.
I en foretrukket utførelsesform for oppfinnelsen blir det urene silisium i pulverform behandlet ved temperatur over 430° C, endog over 1.000° C, og spesielt av størrelsesordenen 1.300° C med sølvfluorid i nærvær av metallisk sølv i pulverform. Den mengde sølvfluorid som da trenges, er mindre enn mengden av urent silisium, idet vektforholdet mellom AgF og urent Si fortrinsvis er av størrelsesordenen ca. 0,4—0,9, mens mengden av sølvpulver er flere ganger så stor, fortrinsvis mellom 3 og 6 ganger mengden av det urene silisium som behandles. In a preferred embodiment of the invention, the impure silicon in powder form is treated at a temperature above 430° C, even above 1,000° C, and especially of the order of magnitude 1,300° C with silver fluoride in the presence of metallic silver in powder form. The amount of silver fluoride that is then needed is less than the amount of impure silicon, as the weight ratio between AgF and impure Si is preferably of the order of approx. 0.4-0.9, while the amount of silver powder is several times as large, preferably between 3 and 6 times the amount of the impure silicon being treated.
Det er forøvrig fastslått at metall-fluoridet, eventuelt i stedet for å være innført på forhånd i fast form, kan frem-bringes direkte på stedet i den masse som er under behandling, og som i det vesentlige består av urent silisium og minst ett av de metaller som utgjør de fluorider som er angitt ovenfor, ved at dette metall påvirkes av gassformet fluorhydrogen ved høy temperatur, fortrinsvis mellom 1.000 og 1.600° C. It has also been established that the metal fluoride, possibly instead of being introduced beforehand in solid form, can be produced directly on site in the mass which is being treated, and which essentially consists of impure silicon and at least one of the metals that make up the fluorides stated above, in that this metal is affected by gaseous hydrogen fluoride at a high temperature, preferably between 1,000 and 1,600°C.
Det gasstrykk for fluorhydrogensyren som spesielt ibrukes i dette tilfelle kan ligge mellom 5 og 300 mm Hg. Fluorhydro-genet blir i alminnelighet brukt fortynnet med en nøytral gass, f. eks. argon og/eller hydrogen. The gas pressure for the hydrofluoric acid which is particularly used in this case can lie between 5 and 300 mm Hg. Hydrogen fluoride is generally used diluted with a neutral gas, e.g. argon and/or hydrogen.
Etter behandlingen i henhold til oppfinnelsen og avkjøling blir det oppnådd en barre som i det vesentlige toestår av rent silisium og en metallegering på grunnlag av det eller de metaller som er brukt under behandlingen og som inneholder de forskjellige metalliske forurensninger som til å begynne med var tilstede i det urene silisium. Det rene silisium og denne legering blir så skilt fra hverandre på vilkår-lig i og for seg kjent måte, f. eks. ved elektrolyse av denne legering på vanlig måte for elektrolytisk rensing, idet den oppløselige anode utgjøres av barren, deretter vaskinger bl. a. med kongevann av det rene silisium som ikke er elektrolysert. After the treatment according to the invention and cooling, an ingot is obtained which essentially consists of pure silicon and a metal alloy based on the metal(s) used during the treatment and which contains the various metallic impurities that were initially present in the impure silicon. The pure silicon and this alloy are then separated from each other in a manner known per se, e.g. by electrolysis of this alloy in the usual way for electrolytic cleaning, as the soluble anode is made up of the ingot, then washings e.g. a. with aqua regia of pure silicon that has not been electrolysed.
Oppfinnelsen skal nu beskrives nær-mere ved hjelp av noen eksempler på hvor-ledes oppfinnelsen kan gjennomføres. The invention will now be described in more detail with the help of some examples of how the invention can be implemented.
Eksempel 1. Example 1.
100 g urent silisium i pulverform ble blandet 'intimt med ca. 90 g rent sølvfluo-rid hvoretter det 'ble tilsatt ca. 400 g rent sølvpulver. 100 g of impure silicon in powder form was mixed intimately with approx. 90 g of pure silver fluoride, after which approx. 400 g pure silver powder.
Etter progressiv oppvarming i argon-atmosfære til ca. 1.300° C og deretter av-kjøling, ble det oppnådd en liten barre av en blanding av rent silisium og en sølv-legering. After progressive heating in an argon atmosphere to approx. 1,300° C and then cooling, a small ingot of a mixture of pure silicon and a silver alloy was obtained.
Denne legering ble så elektrolysert, for den største del, hvoretter silisiumet ble vasket, etter hverandre med vandige opp-løsninger av salpetersyre, fluorhydrogensyre og kongevann, og tilslutt med vann for å fjerne fullstendig ethvert spor av le-geringen. This alloy was then electrolyzed, for the most part, after which the silicon was washed successively with aqueous solutions of nitric acid, hydrofluoric acid, and aqua regia, and finally with water to completely remove any trace of the alloy.
Analyseresultatene er gitt i følgende tabell: The analysis results are given in the following table:
Eksempel 2. Example 2.
50 g urent silisium hvis elektriske motstand lå mellom 0,04 og 0,06 ohm/cm ble 50 g of impure silicon whose electrical resistance was between 0.04 and 0.06 ohm/cm was
behandlet ved ca. 1.500° C med 350 g sølv-fluorid som ble tilsatt etter hvert sam-tidig som det ble blåst hydrogen inn i smei-ten. treated at approx. 1,500° C with 350 g of silver fluoride which was added gradually at the same time as hydrogen was blown into the melt.
Etter adskillelse, slik som beskrevet i After separation, as described in
eksempel 1, av silisiumet og sølvlegeringen, example 1, of the silicon and silver alloy,
ble det tilslutt oppnådd rent silisium med pure silicon was eventually obtained with
en motstand som lå mellom 20 og 40 ohm/ a resistance that was between 20 and 40 ohms/
cm. cm.
Eksempel 3. Example 3.
I en blanding av 50 g smeltet urent In a mixture of 50 g melted impure
silisium med elektrisk motstand av stør-relsesordenen 0,04 ohm/cm og ca. 300 g silicon with electrical resistance of the order of magnitude 0.04 ohm/cm and approx. 300 g
rent aluminium ble det kontinuerlig bob-let inn en strøm av gassformet hydrogen pure aluminum, a stream of gaseous hydrogen was continuously bubbled in
og gassformet fluorhydrogensyre, i et vo-lumforhold mellom H2 og HF på ca. 20. and gaseous hydrofluoric acid, in a volume ratio between H2 and HF of approx. 20.
Etter behandling og kjøling, etterfulgt av After processing and cooling, followed by
adskillelse slik som beskrevet i eksempel 1, separation as described in example 1,
av silisium og aluminiumlegering, ble det of silicon and aluminum alloy, it was
tilslutt oppnådd rent silisium med en motstand på mere enn 10 ohm/cm. finally obtained pure silicon with a resistance of more than 10 ohm/cm.
Eksempel 4. Example 4.
Til 100 g urent silisium med en elektrisk motstand på ca. 0,03 ohm/cm ble det For 100 g of impure silicon with an electrical resistance of approx. It was 0.03 ohm/cm
satt 400 g rent sølv og 22 g rent aluminium-fluorid. put 400 g of pure silver and 22 g of pure aluminum fluoride.
Den blanding som derved ble oppnådd, The mixture thus obtained,
ble smeltet og oppvarmet under vakuum was melted and heated under vacuum
ved en temperatur på ca. 1.350° C. at a temperature of approx. 1,350°C.
Etter kjøling og utskillelse av sølvet, After cooling and separating the silver,
ble det oppnådd rent silisium med en elektrisk motstand som var lik minst 5 ohm/ pure silicon was obtained with an electrical resistance equal to at least 5 ohm/
cm. cm.
Claims (7)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT3173471A IT946109B (en) | 1971-11-26 | 1971-11-26 | HIGH DENSITY POLYETHYLENE SUITABLE FOR FILMING AND PROCEDURE FOR ITS OBTAINMENT |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NO139688B true NO139688B (en) | 1979-01-15 |
| NO139688C NO139688C (en) | 1979-04-25 |
Family
ID=11234291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO426972A NO139688C (en) | 1971-11-26 | 1972-11-22 | PROCEDURE FOR THE PREPARATION OF POLYETHYL WITH HIGH DENSITY FOR FILM FORMATION BY MELTING AND MECHANICAL HOMOGENIZATION |
Country Status (13)
| Country | Link |
|---|---|
| JP (1) | JPS4860757A (en) |
| BE (1) | BE791712A (en) |
| CH (1) | CH551456A (en) |
| DD (1) | DD101904A5 (en) |
| ES (1) | ES409254A1 (en) |
| FR (1) | FR2186486B1 (en) |
| GB (1) | GB1392768A (en) |
| IT (1) | IT946109B (en) |
| LU (1) | LU66538A1 (en) |
| NL (1) | NL7215939A (en) |
| NO (1) | NO139688C (en) |
| PL (1) | PL87756B1 (en) |
| SE (1) | SE398461B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1105171B (en) * | 1955-11-18 | 1961-04-20 | Basf Ag | Process for the production of uniform polymers |
-
0
- BE BE791712D patent/BE791712A/en unknown
-
1971
- 1971-11-26 IT IT3173471A patent/IT946109B/en active
-
1972
- 1972-11-22 FR FR7241408A patent/FR2186486B1/fr not_active Expired
- 1972-11-22 NO NO426972A patent/NO139688C/en unknown
- 1972-11-22 GB GB5410372A patent/GB1392768A/en not_active Expired
- 1972-11-23 DD DD16704972A patent/DD101904A5/xx unknown
- 1972-11-23 ES ES409254A patent/ES409254A1/en not_active Expired
- 1972-11-24 LU LU66538D patent/LU66538A1/xx unknown
- 1972-11-24 SE SE1538572A patent/SE398461B/en unknown
- 1972-11-24 NL NL7215939A patent/NL7215939A/xx not_active Application Discontinuation
- 1972-11-24 PL PL15905972A patent/PL87756B1/pl unknown
- 1972-11-25 CH CH1719972A patent/CH551456A/en not_active IP Right Cessation
- 1972-11-27 JP JP11813872A patent/JPS4860757A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2257065B2 (en) | 1976-12-09 |
| IT946109B (en) | 1973-05-21 |
| ES409254A1 (en) | 1975-12-01 |
| DD101904A5 (en) | 1973-11-20 |
| BE791712A (en) | 1973-03-16 |
| GB1392768A (en) | 1975-04-30 |
| CH551456A (en) | 1974-07-15 |
| PL87756B1 (en) | 1976-07-31 |
| SE398461B (en) | 1977-12-27 |
| DE2257065A1 (en) | 1973-07-05 |
| LU66538A1 (en) | 1973-02-01 |
| NO139688C (en) | 1979-04-25 |
| FR2186486A1 (en) | 1974-01-11 |
| JPS4860757A (en) | 1973-08-25 |
| NL7215939A (en) | 1973-05-29 |
| FR2186486B1 (en) | 1976-08-20 |
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