[go: up one dir, main page]

NL8001295A - Combinatie van een halfgeleider en glas. - Google Patents

Combinatie van een halfgeleider en glas. Download PDF

Info

Publication number
NL8001295A
NL8001295A NL8001295A NL8001295A NL8001295A NL 8001295 A NL8001295 A NL 8001295A NL 8001295 A NL8001295 A NL 8001295A NL 8001295 A NL8001295 A NL 8001295A NL 8001295 A NL8001295 A NL 8001295A
Authority
NL
Netherlands
Prior art keywords
semiconductor
layer
semiconductor layer
glass
combination
Prior art date
Application number
NL8001295A
Other languages
English (en)
Dutch (nl)
Original Assignee
Licentia Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Gmbh filed Critical Licentia Gmbh
Publication of NL8001295A publication Critical patent/NL8001295A/nl

Links

Classifications

    • H10W72/013—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/38—Photoelectric screens; Charge-storage screens not using charge storage, e.g. photo-emissive screen, extended cathode
    • H10W70/692—
    • H10W72/30—
    • H10W72/073—
    • H10W72/07331—
    • H10W72/07337—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/936—Graded energy gap

Landscapes

  • Laminated Bodies (AREA)
  • Glass Compositions (AREA)
  • Photovoltaic Devices (AREA)
  • Surface Treatment Of Glass (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Electron Tubes For Measurement (AREA)
NL8001295A 1979-03-14 1980-03-04 Combinatie van een halfgeleider en glas. NL8001295A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2909956 1979-03-14
DE19792909956 DE2909956A1 (de) 1979-03-14 1979-03-14 Halbleiter-glas-verbundwerkstoff

Publications (1)

Publication Number Publication Date
NL8001295A true NL8001295A (nl) 1980-09-16

Family

ID=6065332

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8001295A NL8001295A (nl) 1979-03-14 1980-03-04 Combinatie van een halfgeleider en glas.

Country Status (5)

Country Link
US (1) US4344803A (fr)
DE (1) DE2909956A1 (fr)
FR (1) FR2451635B1 (fr)
GB (1) GB2045524B (fr)
NL (1) NL8001295A (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2507386A1 (fr) * 1981-06-03 1982-12-10 Labo Electronique Physique Dispositif semi-conducteur, emetteur d'electrons, dont la couche active possede un gradient de dopage
DE3242737A1 (de) * 1982-11-19 1984-05-24 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen einer halbleiter-photokathode
US5315126A (en) * 1992-10-13 1994-05-24 Itt Corporation Highly doped surface layer for negative electron affinity devices
US5512375A (en) * 1993-10-14 1996-04-30 Intevac, Inc. Pseudomorphic substrates
JP2009258055A (ja) * 2008-04-21 2009-11-05 Hamamatsu Photonics Kk 放射線像変換パネル

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3287611A (en) * 1961-08-17 1966-11-22 Gen Motors Corp Controlled conducting region geometry in semiconductor devices
NL290121A (fr) * 1963-03-12
US3460240A (en) * 1965-08-24 1969-08-12 Westinghouse Electric Corp Manufacture of semiconductor solar cells
US3502884A (en) * 1966-12-19 1970-03-24 Rca Corp Method and apparatus for detecting light by capacitance change using semiconductor material with depletion layer
US3458782A (en) * 1967-10-18 1969-07-29 Bell Telephone Labor Inc Electron beam charge storage device employing diode array and establishing an impurity gradient in order to reduce the surface recombination velocity in a region of electron-hole pair production
US3575628A (en) * 1968-11-26 1971-04-20 Westinghouse Electric Corp Transmissive photocathode and devices utilizing the same
US3548233A (en) * 1968-11-29 1970-12-15 Rca Corp Charge storage device with pn junction diode array target having semiconductor contact pads
US3631303A (en) * 1970-01-19 1971-12-28 Varian Associates Iii-v cathodes having a built-in gradient of potential energy for increasing the emission efficiency
US3769536A (en) * 1972-01-28 1973-10-30 Varian Associates Iii-v photocathode bonded to a foreign transparent substrate
US3959038A (en) * 1975-04-30 1976-05-25 The United States Of America As Represented By The Secretary Of The Army Electron emitter and method of fabrication
GB1536412A (en) * 1975-05-14 1978-12-20 English Electric Valve Co Ltd Photocathodes
US4086102A (en) * 1976-12-13 1978-04-25 King William J Inexpensive solar cell and method therefor
DE2842492C2 (de) 1978-09-29 1986-04-17 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur Herstellung einer aus einem Halbleiter-Glas-Verbundwerkstoff bestehenden Photokathode

Also Published As

Publication number Publication date
GB2045524A (en) 1980-10-29
GB2045524B (en) 1983-06-15
US4344803A (en) 1982-08-17
DE2909956A1 (de) 1980-09-18
FR2451635B1 (fr) 1985-07-26
FR2451635A1 (fr) 1980-10-10

Similar Documents

Publication Publication Date Title
US4056879A (en) Method of forming silicon solar energy cell having improved back contact
DE3015706A1 (de) Solarzelle mit schottky-sperrschicht
SE8705016L (sv) Sett att belegga glas
DE19634617B4 (de) Verfahren zur Herstellung einer Siliziumsolarzelle mit verringerter Rekombination nahe der Solarzellenoberfläche
US4201798A (en) Method of applying an antireflective coating to a solar cell
ATE171732T1 (de) Verfahren zur herstellung einer metalloxidschicht, vakuumbehandlungsanlage hierfür sowie mit mindestens einer metalloxidschicht beschichteter teil
US4377901A (en) Method of manufacturing solar cells
US4349395A (en) Method for producing MOS semiconductor device
NL8001295A (nl) Combinatie van een halfgeleider en glas.
US4096511A (en) Photocathodes
US4999841A (en) Semiconductor lasers
JPS63175431A (ja) ホウケイ酸ガラスを有する半導体装置の製造方法
DE2411517A1 (de) Verfahren zum herstellen einer lichtempfindlichen heterogendiode
US4156622A (en) Tantalum oxide antireflective coating and method of forming same
US3421056A (en) Thin window drifted silicon,charged particle detector
DE1444521A1 (de) Verfahren zur Herstellung einer Halbleiteranordnung
US3145126A (en) Method of making diffused junctions
US3769558A (en) Surface inversion solar cell and method of forming same
US4347263A (en) Method of applying an antireflective and/or dielectric coating
US3303069A (en) Method of manufacturing semiconductor devices
GB1526937A (en) Iii-v semiconductor photocathodes
JPS5476629A (en) Coating composition
DE2818237A1 (de) Infrarot-detektorzelle
DE1614815A1 (de) Halbleiteranordnung
GB1194048A (en) Method of Making Junctions for Semiconductor Devices

Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
BV The patent application has lapsed