GB1194048A - Method of Making Junctions for Semiconductor Devices - Google Patents
Method of Making Junctions for Semiconductor DevicesInfo
- Publication number
- GB1194048A GB1194048A GB39911/67A GB3991167A GB1194048A GB 1194048 A GB1194048 A GB 1194048A GB 39911/67 A GB39911/67 A GB 39911/67A GB 3991167 A GB3991167 A GB 3991167A GB 1194048 A GB1194048 A GB 1194048A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- semi
- modified
- conductor
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P34/42—
-
- H10P95/90—
Landscapes
- Recrystallisation Techniques (AREA)
- Electron Beam Exposure (AREA)
Abstract
1,194,048. Semi-conductor devices. TEXAS INSTRUMENTS Inc. 31 Aug., 1967 [30 Dec., 1966], No. 39911/67. Heading H1K. The impurity concentration in a doped region of a semi-conductor body is modified by an outdiffusion process in which the necessary heat is produced by a focused beam of energy such as an electron beam or laser beam. In the preferred technique described the semi-conductor body, in which a doped region has already been formed by a conventional diffusion method, is exposed to an electron beam which is focused on to the previously doped region and causes diffusion from this region into the environment-which is preferably a vacuum. Before such exposure the surface to be exposed is cleaned, and the electron beam itself may be used to facilitate the cleaning-e.g. by rastering the semi-conductor surface with the beam in a vapour etch atmosphere. The out-diffusion modifies not only the concentration but also the distribution of the deposit in the diffused region, and the resulting impurity profile is such that the impurity concentration increases with depth from the surface to a maximum deeper within the doped zone. Such an impurity profile is particularly suitable for the base of a transistor. Fig. 3 (not shown) depicts a transistor in which the base (15<SP>1</SP>) has been formed by the method of the invention and an emitter (17) subsequently diffused into itconveniently by a method also involving the use of a focused energy beam as described in Specification 1,194,049. Having modified the impurity concentration in a given (e.g. N) type conductivity region, the region may be further modified by depositing over the modified region a layer of the same type but different conductivity (e.g. N+) and the focused beam used to diffuse impurity from this deposited layer into the region. Figs. 6 to 8 (not shown) depict successive stages of such a process. Fig. 9 shows a further example in which an N-type body 61 surmounted by an N<SP>+</SP> layer 63 is being exposed to an electron beam 65. This causes out-diffusion from both the layer and the body to provide modified zones 67 and 69 in each of them. The invention is stated to be suitable for use with any semi-conductor material, and numerous examples are given-including semiconductive dielectrics such as titanium dioxide.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US60606566A | 1966-12-30 | 1966-12-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1194048A true GB1194048A (en) | 1970-06-10 |
Family
ID=24426383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB39911/67A Expired GB1194048A (en) | 1966-12-30 | 1967-08-31 | Method of Making Junctions for Semiconductor Devices |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE1644032A1 (en) |
| FR (1) | FR1552900A (en) |
| GB (1) | GB1194048A (en) |
| NL (1) | NL6713196A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0470692A3 (en) * | 1990-08-09 | 1994-02-23 | Semitex Co Ltd |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2236271A1 (en) * | 1973-06-19 | 1975-01-31 | Anvar | Method of semiconductor junction fabrication - uses localised laser irradiation followed by reheating |
| JPS5633822A (en) * | 1979-08-29 | 1981-04-04 | Hitachi Ltd | Preparation of semiconductor device |
-
1967
- 1967-08-17 DE DE19671644032 patent/DE1644032A1/en active Pending
- 1967-08-31 GB GB39911/67A patent/GB1194048A/en not_active Expired
- 1967-09-14 FR FR1552900D patent/FR1552900A/fr not_active Expired
- 1967-09-28 NL NL6713196A patent/NL6713196A/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0470692A3 (en) * | 1990-08-09 | 1994-02-23 | Semitex Co Ltd |
Also Published As
| Publication number | Publication date |
|---|---|
| NL6713196A (en) | 1968-07-01 |
| FR1552900A (en) | 1969-01-10 |
| DE1644032A1 (en) | 1971-03-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |