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MY171026A - Copper strand for bonding wire and method for producing copper strand for bonding wire - Google Patents

Copper strand for bonding wire and method for producing copper strand for bonding wire

Info

Publication number
MY171026A
MY171026A MYPI2014700100A MYPI2014700100A MY171026A MY 171026 A MY171026 A MY 171026A MY PI2014700100 A MYPI2014700100 A MY PI2014700100A MY PI2014700100 A MYPI2014700100 A MY PI2014700100A MY 171026 A MY171026 A MY 171026A
Authority
MY
Malaysia
Prior art keywords
bonding wire
semi
copper strand
wire
copper wire
Prior art date
Application number
MYPI2014700100A
Inventor
Satoshi Kumagai
Hitoshi Nakamoto
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of MY171026A publication Critical patent/MY171026A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • H10W72/0115—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H10W72/5522—
    • H10W72/952—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Wire Bonding (AREA)
  • Conductive Materials (AREA)
  • Continuous Casting (AREA)

Abstract

This semi-wrought copper wire for a bonding wire is a semi-wrought copper wire for forming a bonding wire having a wire diameter of 180 ?m or less. A diameter of the semi-wrought copper wire is in a range of 0.15 mm or more and 3.0 mm or less. The semi-wrought copper wire has a composition that contains one or more additional elements selected from Mg, Ca, Sr, Ba, Ra, Zr, Ti, and rare-earth elements such that a total content thereof is in a range of 0.0001 mass% or more and 0.01 mass% or less, with a remainder being copper and unavoidable impurities. A special grain boundary ratio (L?/L) of the semi-wrought copper wire which is a ratio of a special grain boundary length L? to a total crystal grain boundary length L measured by an EBSD method is in a range of 50%. or more.
MYPI2014700100A 2011-07-22 2012-07-17 Copper strand for bonding wire and method for producing copper strand for bonding wire MY171026A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011161036 2011-07-22

Publications (1)

Publication Number Publication Date
MY171026A true MY171026A (en) 2019-09-23

Family

ID=47601004

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2014700100A MY171026A (en) 2011-07-22 2012-07-17 Copper strand for bonding wire and method for producing copper strand for bonding wire

Country Status (7)

Country Link
JP (1) JP5344070B2 (en)
KR (1) KR101926215B1 (en)
CN (1) CN103608910B (en)
MY (1) MY171026A (en)
PH (1) PH12014500149A1 (en)
TW (1) TWI586448B (en)
WO (1) WO2013015154A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6175932B2 (en) * 2013-06-24 2017-08-09 三菱マテリアル株式会社 Drawing copper wire, drawing copper wire manufacturing method and cable
KR101519075B1 (en) * 2013-12-03 2015-05-21 (주)신동 Electromagnetic wave shielding Fe-Cu wire, rod and Manufacturing method for the same
JP6056876B2 (en) 2015-01-07 2017-01-11 三菱マテリアル株式会社 Superconducting stabilizer
JP6299802B2 (en) 2016-04-06 2018-03-28 三菱マテリアル株式会社 Superconducting stabilizer, superconducting wire and superconducting coil
JP6299803B2 (en) 2016-04-06 2018-03-28 三菱マテリアル株式会社 Superconducting wire and superconducting coil
CN106119597A (en) * 2016-08-30 2016-11-16 芜湖楚江合金铜材有限公司 The different in nature copper wires of a kind of environment-friendly and high-performance and processing technique thereof
CN106947881A (en) * 2017-05-05 2017-07-14 三门峡宏鑫有色金属有限公司 Multielement rare earth high conductivity Cu alloy material and preparation method thereof
US11613794B2 (en) 2017-10-30 2023-03-28 Mitsubishi Materials Corporation Superconductivity stabilizing material, superconducting wire and superconducting coil
WO2019151130A1 (en) * 2018-01-30 2019-08-08 タツタ電線株式会社 Bonding wire
JP7380550B2 (en) 2018-12-13 2023-11-15 三菱マテリアル株式会社 pure copper plate
CN111661953A (en) * 2020-06-16 2020-09-15 包头稀土研究院 Method for separating fluorine and phosphorus in mixed rare earth alkaline wastewater and application
JP7596784B2 (en) * 2020-12-28 2024-12-10 株式会社プロテリアル Wire rod manufacturing method and wire rod manufacturing device
CN120452906B (en) * 2025-06-16 2025-11-07 西安中实金属有限公司 A corrosion-resistant copper cable and its electrochemical corrosion prevention process

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4676827A (en) * 1985-03-27 1987-06-30 Mitsubishi Kinzoku Kabushiki Kaisha Wire for bonding a semiconductor device and process for producing the same
JPS63286212A (en) * 1987-05-16 1988-11-22 Sumitomo Electric Ind Ltd Manufacture of metal wire for wiring of semiconductor
JPH02207541A (en) * 1989-02-07 1990-08-17 Sumitomo Electric Ind Ltd Manufacture of semiconductor element connection wire
JP4501818B2 (en) * 2005-09-02 2010-07-14 日立電線株式会社 Copper alloy material and method for producing the same
JP5396939B2 (en) * 2009-03-16 2014-01-22 三菱マテリアル株式会社 Rough drawn copper wire manufacturing method, rough drawn copper wire manufacturing apparatus, and rough drawn copper wire
JP5499933B2 (en) * 2010-01-12 2014-05-21 三菱マテリアル株式会社 Phosphorous copper anode for electrolytic copper plating, method for producing the same, and electrolytic copper plating method

Also Published As

Publication number Publication date
CN103608910A (en) 2014-02-26
JP5344070B2 (en) 2013-11-20
KR20140050630A (en) 2014-04-29
JP2013048225A (en) 2013-03-07
KR101926215B1 (en) 2018-12-06
WO2013015154A1 (en) 2013-01-31
TWI586448B (en) 2017-06-11
PH12014500149A1 (en) 2017-05-19
TW201323104A (en) 2013-06-16
CN103608910B (en) 2016-03-02

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