MY175700A - Wire bonding and method of manufacturing wire bonding - Google Patents
Wire bonding and method of manufacturing wire bondingInfo
- Publication number
- MY175700A MY175700A MYPI2016702764A MYPI2016702764A MY175700A MY 175700 A MY175700 A MY 175700A MY PI2016702764 A MYPI2016702764 A MY PI2016702764A MY PI2016702764 A MYPI2016702764 A MY PI2016702764A MY 175700 A MY175700 A MY 175700A
- Authority
- MY
- Malaysia
- Prior art keywords
- core material
- wire bonding
- antidiscoloring
- layer
- bonding wire
- Prior art date
Links
Classifications
-
- H10W72/0115—
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/45609—Indium (In) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45644—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45664—Palladium (Pd) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/4569—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H10W72/522—
-
- H10W72/552—
-
- H10W72/5522—
-
- H10W74/00—
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Wire Bonding (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
Abstract
There is provided a bonding wire containing Ag in a core material, in which discoloration of a surface and damage of a semiconductor element during bonding can be suppressed, and continuous bondability and productivity are excellent. The bonding wire includes the core material containing 75% by mass or more of Ag, and an antidiscoloring layer 14 formed on an outer circumferential surface of this core material. The antidiscoloring layer is fonned by coating the outer peripheral surface of the core material with an aqueous solution containing at least one aliphatic organic compound having 8 to 18 carbon atoms and at least one thiol group, and at least one surfactant.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014017580 | 2014-01-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY175700A true MY175700A (en) | 2020-07-06 |
Family
ID=53756818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI2016702764A MY175700A (en) | 2014-01-31 | 2015-01-20 | Wire bonding and method of manufacturing wire bonding |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP5842068B2 (en) |
| KR (1) | KR101668975B1 (en) |
| CN (1) | CN105393343A (en) |
| MY (1) | MY175700A (en) |
| TW (1) | TWI534835B (en) |
| WO (1) | WO2015115241A1 (en) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015074703A1 (en) * | 2013-11-21 | 2015-05-28 | Heraeus Deutschland GmbH & Co. KG | Coated wire for bonding applications |
| TWI605559B (en) | 2014-04-21 | 2017-11-11 | 新日鐵住金高新材料股份有限公司 | Bonding wire for semiconductor device |
| WO2016203659A1 (en) * | 2015-06-15 | 2016-12-22 | 日鉄住金マイクロメタル株式会社 | Bonding wire for semiconductor device |
| WO2017013796A1 (en) | 2015-07-23 | 2017-01-26 | 日鉄住金マイクロメタル株式会社 | Bonding wire for semiconductor device |
| DE112015004682B4 (en) * | 2015-08-12 | 2020-07-30 | Nippon Micrometal Corporation | Bond wire for semiconductor device |
| SG10201508103QA (en) * | 2015-09-29 | 2017-04-27 | Heraeus Materials Singapore Pte Ltd | Alloyed silver wire |
| SG10201509634UA (en) * | 2015-11-23 | 2017-06-29 | Heraeus Oriental Hitec Co Ltd | Coated wire |
| CN105950895B (en) * | 2016-05-06 | 2018-04-20 | 河南优克电子材料有限公司 | A kind of manufacture method of the fine silver alloy bonding line of small chip LED encapsulation |
| JP6969869B2 (en) * | 2016-12-19 | 2021-11-24 | 株式会社大和化成研究所 | Vaporizable discoloration inhibitor |
| TWI802555B (en) * | 2017-03-31 | 2023-05-21 | 日商拓自達電線股份有限公司 | bonding wire |
| JP6869920B2 (en) | 2018-04-02 | 2021-05-12 | 田中電子工業株式会社 | Precious metal-coated silver wire for ball bonding and its manufacturing method, and semiconductor device using precious metal-coated silver wire for ball bonding and its manufacturing method |
| JP6869919B2 (en) * | 2018-04-02 | 2021-05-12 | 田中電子工業株式会社 | Precious metal-coated silver wire for ball bonding and its manufacturing method, and semiconductor device using precious metal-coated silver wire for ball bonding and its manufacturing method |
| JP6807426B2 (en) * | 2019-04-12 | 2021-01-06 | 田中電子工業株式会社 | Gold-coated silver bonding wire and its manufacturing method, and semiconductor device and its manufacturing method |
| USD904836S1 (en) * | 2019-06-03 | 2020-12-15 | Ji Yeon JEONG | Tongs for cooking |
| KR20220034846A (en) * | 2019-08-13 | 2022-03-18 | 쌩-고벵 글래스 프랑스 | Reduces silver wire corrosion on glass substrates |
| EP3993017B1 (en) * | 2019-11-22 | 2024-10-09 | NIPPON STEEL Chemical & Material Co., Ltd. | Ag alloy bonding wire for semiconductor device |
| WO2022169407A1 (en) * | 2021-02-05 | 2022-08-11 | Heraeus Materials Singapore Pte. Ltd. | Coated wire |
| KR102812812B1 (en) * | 2022-03-08 | 2025-05-27 | 엘티메탈 주식회사 | Manufacturing method of bonding wire and the wire boding manufactured thereby |
| KR102810270B1 (en) * | 2022-03-08 | 2025-05-26 | 엘티메탈 주식회사 | Manufacturing method of bonding wire and the wire boding manufactured thereby |
| KR102812809B1 (en) * | 2022-12-14 | 2025-05-27 | 엘티메탈 주식회사 | Manufacturing method of bonding wire and the wire boding manufactured thereby |
| KR102812817B1 (en) * | 2022-12-14 | 2025-05-27 | 엘티메탈 주식회사 | Manufacturing method of bonding wire and the wire boding manufactured thereby |
| CN117133852B (en) * | 2023-07-20 | 2024-08-06 | 贵研半导体材料(云南)有限公司 | Low-light-attenuation anti-color-change bonding silver wire and preparation method thereof |
| CN117712072A (en) * | 2023-12-08 | 2024-03-15 | 郑州机械研究所有限公司 | Silver alloy bonding wire and preparation method and application thereof |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5423794B2 (en) | 1975-01-27 | 1979-08-16 | ||
| JPS5626459A (en) | 1979-08-11 | 1981-03-14 | Noge Denki Kogyo:Kk | Bonding wire for assembling of semiconductor device |
| JPS5691306A (en) * | 1979-12-21 | 1981-07-24 | Nippon Electric Co | Bonding wire |
| JP2002308708A (en) * | 2001-04-12 | 2002-10-23 | Katayama Chem Works Co Ltd | Discoloration inhibitor for silver antimicrobial agent, silver antimicrobial agent comprising the same and antimicrobial method |
| JPWO2006112031A1 (en) * | 2005-04-14 | 2008-11-27 | ゼネラルテクノロジー株式会社 | Ink composition and printing method using the same |
| JP5616165B2 (en) * | 2010-08-24 | 2014-10-29 | タツタ電線株式会社 | Silver bonding wire |
| JP2013219329A (en) * | 2012-03-15 | 2013-10-24 | Jx Nippon Mining & Metals Corp | Bonding wire for semiconductor device |
-
2015
- 2015-01-20 WO PCT/JP2015/051316 patent/WO2015115241A1/en not_active Ceased
- 2015-01-20 MY MYPI2016702764A patent/MY175700A/en unknown
- 2015-01-20 KR KR1020157036378A patent/KR101668975B1/en active Active
- 2015-01-20 CN CN201580001101.3A patent/CN105393343A/en active Pending
- 2015-01-30 TW TW104103309A patent/TWI534835B/en active
- 2015-01-30 JP JP2015017274A patent/JP5842068B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201535417A (en) | 2015-09-16 |
| KR101668975B1 (en) | 2016-10-24 |
| JP5842068B2 (en) | 2016-01-13 |
| TWI534835B (en) | 2016-05-21 |
| JP2015164186A (en) | 2015-09-10 |
| WO2015115241A1 (en) | 2015-08-06 |
| CN105393343A (en) | 2016-03-09 |
| KR20160007663A (en) | 2016-01-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| MY175700A (en) | Wire bonding and method of manufacturing wire bonding | |
| PH12017500284B1 (en) | Protective coating-forming sheet and method for manufacturing semiconductor chip provided with protective coating | |
| MX2016015411A (en) | Process for preparing a surface-modified material. | |
| MX2023012571A (en) | Perovskite material layer processing. | |
| SG10201810390TA (en) | Thermal processing susceptor | |
| JP2018512415A5 (en) | ||
| MX2018001607A (en) | Elastic composite and absorbent article including the same. | |
| PH12016502141B1 (en) | Methods and apparati for making thin semi-conductor wafers with locally controlled regions that are relatively thicker than other regions and such wafers | |
| MX2017012813A (en) | Adhesive tape for preventing adhesion of aquatic organisms. | |
| MX2016005564A (en) | Oxidation barrier layer. | |
| PH12015501689B1 (en) | Mold for ironing and method for manufacturing molded material | |
| PH12016501670B1 (en) | Protective film-forming film and method of manufacturing semiconductor chip with protective film | |
| PL3519604T3 (en) | Nuclear component with a metal substrate, method for the production thereof by dli-mocvd, and uses of same for controlling oxidation/hydridation | |
| USD737379S1 (en) | Typeface | |
| MX2017013328A (en) | Fibrous basic magnesium sulfate, manufacturing method therefor and resin composition thereof. | |
| WO2016108044A3 (en) | Substrates having a functional capability | |
| WO2015160808A3 (en) | Die package comprising die-to-wire connector and a wire-to-die connector configured to couple to a die package | |
| MX2016007704A (en) | Method for producing a marking. | |
| JP2013513349A5 (en) | ||
| MX395105B (en) | METHOD FOR MANUFACTURING A TOOTHED COMPONENT AND THE TOOTHED COMPONENT. | |
| MX2018003118A (en) | Plug and method for manufacturing same. | |
| WO2016038560A9 (en) | Process for the preparation of enzalutamide | |
| MX383003B (en) | AMORPHOUS ALLOY MAGNETIC CORE AND MANUFACTURING METHOD THEREOF. | |
| ITUA20162943A1 (en) | Method for the industrial manufacture of a semiconductor structure with reduced bowing. | |
| PH12017500209A1 (en) | Cover lid with selective and edge metallization |