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MX2009013011A - Control termico desmontable para hornos de estirado de cristal cinta. - Google Patents

Control termico desmontable para hornos de estirado de cristal cinta.

Info

Publication number
MX2009013011A
MX2009013011A MX2009013011A MX2009013011A MX2009013011A MX 2009013011 A MX2009013011 A MX 2009013011A MX 2009013011 A MX2009013011 A MX 2009013011A MX 2009013011 A MX2009013011 A MX 2009013011A MX 2009013011 A MX2009013011 A MX 2009013011A
Authority
MX
Mexico
Prior art keywords
crystal
thermal control
removable thermal
ovens
stretching
Prior art date
Application number
MX2009013011A
Other languages
English (en)
Inventor
Weidong Huang
David Harvey
Richard Wallace
Scott Reitsma
Christine Richardson
Original Assignee
Evergreen Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evergreen Solar Inc filed Critical Evergreen Solar Inc
Publication of MX2009013011A publication Critical patent/MX2009013011A/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

Un horno de estirado de cristal cinta tiene un aislamiento de base y un aislamiento de revestimiento conectado de manera desmontable al aislamiento de base; por lo menos una porción del aislamiento de revestimiento forma un interior para contener un crisol.
MX2009013011A 2007-06-14 2008-06-13 Control termico desmontable para hornos de estirado de cristal cinta. MX2009013011A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US94401707P 2007-06-14 2007-06-14
PCT/US2008/066865 WO2008154654A1 (en) 2007-06-14 2008-06-13 Removable thermal control for ribbon crystal pulling furnaces

Publications (1)

Publication Number Publication Date
MX2009013011A true MX2009013011A (es) 2010-01-20

Family

ID=39643160

Family Applications (2)

Application Number Title Priority Date Filing Date
MX2009013011A MX2009013011A (es) 2007-06-14 2008-06-13 Control termico desmontable para hornos de estirado de cristal cinta.
MX2009013010A MX2009013010A (es) 2007-06-14 2008-06-13 Recalentador del horno de estirado de cristal con al menos una abertura.

Family Applications After (1)

Application Number Title Priority Date Filing Date
MX2009013010A MX2009013010A (es) 2007-06-14 2008-06-13 Recalentador del horno de estirado de cristal con al menos una abertura.

Country Status (9)

Country Link
US (2) US8293007B2 (es)
EP (2) EP2152941A1 (es)
JP (2) JP5314009B2 (es)
KR (2) KR20100019536A (es)
CN (2) CN101715496A (es)
CA (2) CA2701822A1 (es)
MX (2) MX2009013011A (es)
MY (2) MY162987A (es)
WO (2) WO2008157313A1 (es)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110155045A1 (en) * 2007-06-14 2011-06-30 Evergreen Solar, Inc. Controlling the Temperature Profile in a Sheet Wafer
US20140083349A1 (en) * 2012-09-21 2014-03-27 Max Era, Inc. Removable thermal control for ribbon crystal pulling furnaces
CN106498488B (zh) * 2016-10-28 2019-04-02 同济大学 同时生长多种掺杂CaF2晶体的装置及基于该装置的制备方法
CN107513767B (zh) * 2017-09-25 2020-02-07 常州大学 一种适用于多晶硅垂直生长机构的温度梯度产生装置及使用方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3265469A (en) 1964-09-21 1966-08-09 Gen Electric Crystal growing apparatus
US4116641A (en) 1976-04-16 1978-09-26 International Business Machines Corporation Apparatus for pulling crystal ribbons from a truncated wedge shaped die
JPS5371689A (en) 1976-12-08 1978-06-26 Agency Of Ind Science & Technol Manufacturing apparatus for band type silicon crystal
US4158038A (en) 1977-01-24 1979-06-12 Mobil Tyco Solar Energy Corporation Method and apparatus for reducing residual stresses in crystals
US4118197A (en) * 1977-01-24 1978-10-03 Mobil Tyco Solar Energy Corp. Cartridge and furnace for crystal growth
JPS54128988A (en) 1978-03-31 1979-10-05 Toshiba Corp Preparation of single crystal
US4235848A (en) 1978-06-15 1980-11-25 Apilat Vitaly Y Apparatus for pulling single crystal from melt on a seed
IN154501B (es) * 1980-03-10 1984-11-03 Mobil Tyco Solar Energy Corp
US4267010A (en) * 1980-06-16 1981-05-12 Mobil Tyco Solar Energy Corporation Guidance mechanism
US4627887A (en) 1980-12-11 1986-12-09 Sachs Emanuel M Melt dumping in string stabilized ribbon growth
US4443411A (en) * 1980-12-15 1984-04-17 Mobil Solar Energy Corporation Apparatus for controlling the atmosphere surrounding a crystal growth zone
US4356152A (en) * 1981-03-13 1982-10-26 Rca Corporation Silicon melting crucible
JPS6163593A (ja) * 1984-09-05 1986-04-01 Toshiba Corp 化合物半導体単結晶の製造装置
JPS62113793A (ja) 1985-11-13 1987-05-25 Toshiba Corp 帯状シリコン結晶の製造装置
DE3743951A1 (de) 1986-12-26 1988-07-07 Toshiba Ceramics Co Einrichtung zum ziehen von siliziumeinkristallen mit einem waermeisolierzylinder und verfahren zur herstellung des materials desselben
JPH09175892A (ja) 1995-10-27 1997-07-08 Japan Energy Corp 単結晶の製造方法
JPH10251090A (ja) * 1997-03-12 1998-09-22 Mitsubishi Heavy Ind Ltd 酸化物単結晶およびその育成方法
JP2001122696A (ja) * 1999-10-21 2001-05-08 Matsushita Seiko Co Ltd リボンシリコンウェハの製造方法
ATE373119T1 (de) 2002-10-18 2007-09-15 Evergreen Solar Inc Verfahren und vorrichtung zur kristallzüchtung
US6814802B2 (en) * 2002-10-30 2004-11-09 Evergreen Solar, Inc. Method and apparatus for growing multiple crystalline ribbons from a single crucible
WO2006082085A2 (de) * 2005-02-03 2006-08-10 Rec Scanwafer As Verfahren und vorrichtung zum herstellen gerichtet erstarrter blöcke aus halbleitermaterialien
US20080134964A1 (en) * 2006-12-06 2008-06-12 Evergreen Solar, Inc. System and Method of Forming a Crystal
US8790460B2 (en) 2009-05-18 2014-07-29 Empire Technology Development Llc Formation of silicon sheets by impinging fluid

Also Published As

Publication number Publication date
CN101755076B (zh) 2013-07-17
KR20100019536A (ko) 2010-02-18
CA2701825A1 (en) 2008-12-24
CA2701822A1 (en) 2008-12-18
US20080308034A1 (en) 2008-12-18
US8293007B2 (en) 2012-10-23
WO2008154654A1 (en) 2008-12-18
US20080308035A1 (en) 2008-12-18
EP2152941A1 (en) 2010-02-17
JP2010529941A (ja) 2010-09-02
US8328932B2 (en) 2012-12-11
MX2009013010A (es) 2010-01-20
WO2008157313A1 (en) 2008-12-24
CN101755076A (zh) 2010-06-23
KR20100021630A (ko) 2010-02-25
CN101715496A (zh) 2010-05-26
JP2010529942A (ja) 2010-09-02
MY162987A (en) 2017-07-31
MY149060A (en) 2013-07-15
EP2152942A1 (en) 2010-02-17
JP5314009B2 (ja) 2013-10-16

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