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MX2009002176A - Metodo para la fabricacion de articulo de vidrio recubierto con oxido de zinc impurificado, de baja resistividad y articulo de vidrio recubierto fabricado mediante el mismo. - Google Patents

Metodo para la fabricacion de articulo de vidrio recubierto con oxido de zinc impurificado, de baja resistividad y articulo de vidrio recubierto fabricado mediante el mismo.

Info

Publication number
MX2009002176A
MX2009002176A MX2009002176A MX2009002176A MX2009002176A MX 2009002176 A MX2009002176 A MX 2009002176A MX 2009002176 A MX2009002176 A MX 2009002176A MX 2009002176 A MX2009002176 A MX 2009002176A MX 2009002176 A MX2009002176 A MX 2009002176A
Authority
MX
Mexico
Prior art keywords
glass article
coated glass
zinc oxide
resistivity
making
Prior art date
Application number
MX2009002176A
Other languages
English (en)
Inventor
Kevin D Sanderson
Liang Ye
Michael B Abrams
Roman Y Korotkov
Gary S Silverman
Ryan Smith
Guillermo Benito Gutierrez
Original Assignee
Pilkington Group Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pilkington Group Ltd filed Critical Pilkington Group Ltd
Publication of MX2009002176A publication Critical patent/MX2009002176A/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/216—ZnO
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/229—Non-specific enumeration
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/23—Mixtures
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/24—Doped oxides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/24—Doped oxides
    • C03C2217/241—Doped oxides with halides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/152—Deposition methods from the vapour phase by cvd
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

Se describe y reivindica un método de deposición de vapor químico a presión atmosférica para la fabricación de un artículo de vidrio recubierto con óxido de zinc impurificado de baja resistividad, elaborado al dirigir una o más corrientes de reactivos gaseosos, específicamente un compuesto que contiene zinc, un compuesto que contiene flúor, un compuesto que contiene oxígeno y por lo menos un compuesto que contiene uno o más de boro, aluminio, galio e indio sobre una superficie de un sustrato de vidrio calentado.
MX2009002176A 2006-08-29 2007-05-03 Metodo para la fabricacion de articulo de vidrio recubierto con oxido de zinc impurificado, de baja resistividad y articulo de vidrio recubierto fabricado mediante el mismo. MX2009002176A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US84078306P 2006-08-29 2006-08-29
PCT/US2007/010624 WO2008027086A1 (en) 2006-08-29 2007-05-03 Method of making a low-resistivity, doped zinc oxide coated glass article and the coated glass article made thereby

Publications (1)

Publication Number Publication Date
MX2009002176A true MX2009002176A (es) 2009-04-22

Family

ID=38602842

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2009002176A MX2009002176A (es) 2006-08-29 2007-05-03 Metodo para la fabricacion de articulo de vidrio recubierto con oxido de zinc impurificado, de baja resistividad y articulo de vidrio recubierto fabricado mediante el mismo.

Country Status (11)

Country Link
US (1) US7989024B2 (es)
EP (1) EP2059488A1 (es)
JP (1) JP5559536B2 (es)
KR (1) KR101409711B1 (es)
CN (1) CN101541701B (es)
AU (1) AU2007290843B2 (es)
BR (1) BRPI0716385A2 (es)
MX (1) MX2009002176A (es)
MY (1) MY148287A (es)
RU (1) RU2447030C2 (es)
WO (1) WO2008027086A1 (es)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0803702D0 (en) 2008-02-28 2008-04-09 Isis Innovation Transparent conducting oxides
IT1393401B1 (it) * 2008-07-28 2012-04-20 Enea Ente Per Le Nuova Tecnologie L En E L Ambiente Metodo per la fabbricazione in linea di strati sottili di zno b trasparente conduttivo e testurizzato su larga area e relativo apparato
WO2010151430A1 (en) * 2009-06-22 2010-12-29 Arkema Inc. Chemical vapor deposition using n,o polydentate ligand complexes of metals
GB0915376D0 (en) 2009-09-03 2009-10-07 Isis Innovation Transparent conducting oxides
KR101638572B1 (ko) * 2010-01-26 2016-07-12 도레이첨단소재 주식회사 징크옥사이드 로드입자를 포함하는 투명 전도성 폴리에스테르 필름
US20120240634A1 (en) * 2011-03-23 2012-09-27 Pilkington Group Limited Method of depositing zinc oxide coatings by chemical vapor deposition
JP5932251B2 (ja) * 2011-06-17 2016-06-08 キヤノン株式会社 フッ化膜形成方法及び光学素子の製造方法
JP5912911B2 (ja) * 2012-06-26 2016-04-27 株式会社Adeka アルミニウム化合物を用いたａｌｄ法による薄膜の製造方法
RU2529443C2 (ru) * 2012-10-31 2014-09-27 Олег Петрович Ксенофонтов Способ изготовления стекловидной композиции
KR102123996B1 (ko) * 2013-02-25 2020-06-17 삼성전자주식회사 알루미늄 전구체, 이를 이용한 박막 형성 방법 및 커패시터 형성 방법
CN116239141B (zh) * 2023-03-09 2025-01-28 南开大学 一种快速、高效、高浓度氟掺杂氧化锌的制备方法

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JPH0682625B2 (ja) * 1985-06-04 1994-10-19 シーメンス ソーラー インダストリーズ，エル．ピー． 酸化亜鉛膜の蒸着方法
JPS6280918A (ja) * 1985-10-03 1987-04-14 住友電気工業株式会社 透明導電膜の製造方法
US5306522A (en) 1986-03-24 1994-04-26 Ensci, Inc. Process for coating a substrate with zinc oxide and uses for coated substrates
JP2718046B2 (ja) * 1988-01-28 1998-02-25 旭硝子株式会社 透明導電膜
JPH01249634A (ja) * 1988-03-30 1989-10-04 Nippon Sheet Glass Co Ltd 導電性ガラスおよびその製造方法
US4990286A (en) * 1989-03-17 1991-02-05 President And Fellows Of Harvard College Zinc oxyfluoride transparent conductor
JP3485918B2 (ja) * 1991-12-26 2004-01-13 アトフィナ・ケミカルズ・インコーポレイテッド ガラス基体の被覆法
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JP2002260448A (ja) * 2000-11-21 2002-09-13 Nippon Sheet Glass Co Ltd 導電膜、その製造方法、それを備えた基板および光電変換装置
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GB0518383D0 (en) 2005-09-09 2005-10-19 Pilkington Plc Deposition process

Also Published As

Publication number Publication date
EP2059488A1 (en) 2009-05-20
US20080057321A1 (en) 2008-03-06
WO2008027086A8 (en) 2009-04-09
AU2007290843B2 (en) 2012-07-26
RU2447030C2 (ru) 2012-04-10
JP2010502541A (ja) 2010-01-28
CN101541701B (zh) 2013-07-17
RU2009111381A (ru) 2010-10-10
MY148287A (en) 2013-03-29
WO2008027086A1 (en) 2008-03-06
BRPI0716385A2 (pt) 2013-01-01
US7989024B2 (en) 2011-08-02
CN101541701A (zh) 2009-09-23
KR101409711B1 (ko) 2014-06-19
JP5559536B2 (ja) 2014-07-23
AU2007290843A1 (en) 2008-03-06
KR20090057287A (ko) 2009-06-04

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