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MX2009001345A - Elemento y metodo de almacenamiento de estado solido. - Google Patents

Elemento y metodo de almacenamiento de estado solido.

Info

Publication number
MX2009001345A
MX2009001345A MX2009001345A MX2009001345A MX2009001345A MX 2009001345 A MX2009001345 A MX 2009001345A MX 2009001345 A MX2009001345 A MX 2009001345A MX 2009001345 A MX2009001345 A MX 2009001345A MX 2009001345 A MX2009001345 A MX 2009001345A
Authority
MX
Mexico
Prior art keywords
flash memory
memory cells
solid state
storage element
state storage
Prior art date
Application number
MX2009001345A
Other languages
English (en)
Inventor
Kenneth J Eldredge
Stephen P Van Aken
Original Assignee
Benhov Gmbh Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Benhov Gmbh Llc filed Critical Benhov Gmbh Llc
Publication of MX2009001345A publication Critical patent/MX2009001345A/es

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

Un método y un sistema para almacenar y recuperar datos utilizando dispositivos de memoria Flash. Un sistema de ejemplo incluye un aparato dentro de la configuración de la memoria Flash. La configuración de la memoria Flash incluye una pluralidad de celdas de memoria, en donde cada celda de memoria tiene una capacidad de almacenamiento de carga para utilizarla en la implementación de almacenamiento digital. El aparato incluye una configuración del proceso configurado para accesar a cada una de las celdas de memoria en una operación de escritura y una operación de lectura. El aparato también incluye un set de instrucciones para dar instrucciones al procesador para imponer niveles de carga para definir la pluralidad de los valores de datos para cada una de las celdas de memoria. Los niveles de carga de ejecución son programables movibles respecto a la capacidad de almacenamiento de carga.
MX2009001345A 2006-08-05 2007-08-06 Elemento y metodo de almacenamiento de estado solido. MX2009001345A (es)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US83562406P 2006-08-05 2006-08-05
US84311706P 2006-09-09 2006-09-09
US86395006P 2006-11-01 2006-11-01
US88692607P 2007-01-27 2007-01-27
PCT/US2007/075293 WO2008019347A2 (en) 2006-08-05 2007-08-06 Solid state storage element and method

Publications (1)

Publication Number Publication Date
MX2009001345A true MX2009001345A (es) 2009-07-17

Family

ID=39033607

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2009001345A MX2009001345A (es) 2006-08-05 2007-08-06 Elemento y metodo de almacenamiento de estado solido.

Country Status (8)

Country Link
US (4) US7877564B2 (es)
EP (1) EP2052389A4 (es)
JP (3) JP5047288B2 (es)
KR (2) KR101266594B1 (es)
CN (1) CN101523504B (es)
CA (1) CA2660087C (es)
MX (1) MX2009001345A (es)
WO (1) WO2008019347A2 (es)

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Also Published As

Publication number Publication date
JP2012109012A (ja) 2012-06-07
JP6313073B2 (ja) 2018-04-18
US7877564B2 (en) 2011-01-25
US8219773B2 (en) 2012-07-10
EP2052389A2 (en) 2009-04-29
WO2008019347A2 (en) 2008-02-14
JP5496993B2 (ja) 2014-05-21
US20120278684A1 (en) 2012-11-01
US20110093761A1 (en) 2011-04-21
EP2052389A4 (en) 2009-08-19
US8972674B2 (en) 2015-03-03
CN101523504B (zh) 2014-01-29
KR20120007544A (ko) 2012-01-20
US20080162791A1 (en) 2008-07-03
KR101266594B1 (ko) 2013-05-22
CN101523504A (zh) 2009-09-02
US20140189219A1 (en) 2014-07-03
JP2014179077A (ja) 2014-09-25
WO2008019347A3 (en) 2008-08-14
JP5047288B2 (ja) 2012-10-10
CA2660087C (en) 2014-09-23
JP2010500697A (ja) 2010-01-07
US8650376B2 (en) 2014-02-11
KR101160107B1 (ko) 2012-06-26
KR20090037501A (ko) 2009-04-15
CA2660087A1 (en) 2008-02-14

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