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MX167068B - Oscilador / resonador de super alta frecuencia - Google Patents

Oscilador / resonador de super alta frecuencia

Info

Publication number
MX167068B
MX167068B MX024037A MX2403790A MX167068B MX 167068 B MX167068 B MX 167068B MX 024037 A MX024037 A MX 024037A MX 2403790 A MX2403790 A MX 2403790A MX 167068 B MX167068 B MX 167068B
Authority
MX
Mexico
Prior art keywords
resonator
high frequency
piezoelectric layer
cavity
frequency oscillator
Prior art date
Application number
MX024037A
Other languages
English (en)
Inventor
Ronald Legge
Curits D Moyer
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of MX167068B publication Critical patent/MX167068B/es

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)

Abstract

La presente invención se refiere a un método para generar una señal eléctrica oscilante caracterizado porque comprende las etapas de : proporcionar una capa conductora, proporcionar una capa piezoeléctrica separada de la capa conductora para una cavidad de una profundidad predeterminada, en la que la capa piezoeléctrica esta excenta de vibrar en la cavidad; estimular una onda acúsica de volumen poco profundo en la capa piezoeléctrica; y detectar la señal eléctrica oscilante de la corriente que fluye a través de la cavidad, entre la capa piezoeléctrica y la capa conductora.
MX024037A 1990-01-03 1990-12-28 Oscilador / resonador de super alta frecuencia MX167068B (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/460,454 US5023503A (en) 1990-01-03 1990-01-03 Super high frequency oscillator/resonator

Publications (1)

Publication Number Publication Date
MX167068B true MX167068B (es) 1993-03-01

Family

ID=23828778

Family Applications (1)

Application Number Title Priority Date Filing Date
MX024037A MX167068B (es) 1990-01-03 1990-12-28 Oscilador / resonador de super alta frecuencia

Country Status (5)

Country Link
US (1) US5023503A (es)
JP (1) JPH0537287A (es)
CA (1) CA2033318C (es)
DE (1) DE4100060C2 (es)
MX (1) MX167068B (es)

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US5283458A (en) * 1992-03-30 1994-02-01 Trw Inc. Temperature stable semiconductor bulk acoustic resonator
EP0596522A1 (en) * 1992-11-06 1994-05-11 AVANCE TECHNOLOGY, Inc. High frequency crystal resonator
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JPH07335951A (ja) * 1994-06-14 1995-12-22 Philips Japan Ltd 圧電アクチュエータ
US5666093A (en) * 1995-08-11 1997-09-09 D'ostilio; James Phillip Mechanically tunable ceramic bandpass filter having moveable tabs
US5856722A (en) * 1996-01-02 1999-01-05 Cornell Research Foundation, Inc. Microelectromechanics-based frequency signature sensor
US5821836A (en) * 1997-05-23 1998-10-13 The Regents Of The University Of Michigan Miniaturized filter assembly
US6124765A (en) * 1997-10-24 2000-09-26 Stmicroelectronics, Inc. Integrated released beam oscillator and associated methods
DE19821527A1 (de) * 1998-05-13 1999-12-02 Siemens Ag Schwingkreis
JP2000180250A (ja) * 1998-10-09 2000-06-30 Ngk Insulators Ltd 質量センサ及び質量検出方法
FR2811163B1 (fr) * 2000-06-30 2002-10-04 Centre Nat Rech Scient Filtre nono-electromecanique
US6534838B1 (en) * 2001-09-07 2003-03-18 Atr Advanced Telecommunications Research Institute International Semiconductor device and method of fabricating the same
US20040135473A1 (en) * 2003-01-15 2004-07-15 Byers Charles L. Piezoelectric devices mounted on integrated circuit chip
EP1585219A1 (en) * 2004-04-06 2005-10-12 Seiko Epson Corporation A micro-flap type nano/micro mechanical device and fabrication method thereof
GB0612754D0 (en) * 2006-06-27 2006-08-09 Univ Cambridge Tech Semiconductor device transducer and method
JP4930769B2 (ja) * 2006-09-04 2012-05-16 セイコーインスツル株式会社 発振器
JP5105345B2 (ja) * 2006-09-04 2012-12-26 セイコーインスツル株式会社 発振器
JP5019040B2 (ja) * 2007-01-18 2012-09-05 セイコーエプソン株式会社 圧電振動子、および発振器
JP4328981B2 (ja) * 2007-01-25 2009-09-09 セイコーエプソン株式会社 圧電振動子の製造方法
JP5727124B2 (ja) * 2008-08-28 2015-06-03 日本電波工業株式会社 圧電振動子
US20100276730A1 (en) * 2009-04-29 2010-11-04 University Of Seoul Industry Cooperation Foundation Semiconductor device
US8253145B2 (en) * 2009-04-29 2012-08-28 University Of Seoul Industry Cooperation Foundation Semiconductor device having strong excitonic binding
US20100270547A1 (en) * 2009-04-27 2010-10-28 University Of Seoul Industry Cooperation Foundation Semiconductor device
US20100270592A1 (en) * 2009-04-27 2010-10-28 University Of Seoul Industry Cooperation Foundation Semiconductor device
US20100270591A1 (en) * 2009-04-27 2010-10-28 University Of Seoul Industry Cooperation Foundation High-electron mobility transistor
US8097999B2 (en) * 2009-04-27 2012-01-17 University Of Seoul Industry Cooperation Foundation Piezoelectric actuator
US20100327278A1 (en) * 2009-06-29 2010-12-30 University Of Seoul Industry Cooperation Foundation Laminated structures
JP5202674B2 (ja) * 2011-03-23 2013-06-05 株式会社東芝 音響半導体装置
US8427249B1 (en) 2011-10-19 2013-04-23 The United States Of America As Represented By The Secretary Of The Navy Resonator with reduced acceleration sensitivity and phase noise using time domain switch
US9128496B2 (en) 2011-10-26 2015-09-08 The United States Of America As Represented By Secretary Of The Navy Auto-ranging for time domain extraction of perturbations to sinusoidal oscillation
US8490462B2 (en) 2011-10-26 2013-07-23 The United States Of America As Represented By The Secretary Of The Navy Auto-ranging for time domain inertial sensor
US8683862B2 (en) 2011-11-03 2014-04-01 The United States Of America As Represented By The Secretary Of The Navy Oscillation apparatus with atomic-layer proximity switch
US8650955B2 (en) 2012-01-18 2014-02-18 The United States Of America As Represented By The Secretary Of The Navy Time domain switched gyroscope
US8875576B2 (en) 2012-03-21 2014-11-04 The United States Of America As Represented By The Secretary Of The Navy Apparatus and method for providing an in-plane inertial device with integrated clock
JP5848210B2 (ja) * 2012-08-16 2016-01-27 日本電信電話株式会社 機械振動子およびその製造方法
US8991250B2 (en) 2012-09-11 2015-03-31 The United States Of America As Represented By Secretary Of The Navy Tuning fork gyroscope time domain inertial sensor
JP2014212410A (ja) * 2013-04-18 2014-11-13 セイコーエプソン株式会社 振動子、発振器、電子機器、移動体、および振動子の製造方法
US10122475B1 (en) * 2017-11-14 2018-11-06 Honeywell International Inc. Systems and methods for generating and transmitting ULF/VLF signals

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JPS52134481A (en) * 1976-05-04 1977-11-10 Nippon Gakki Seizo Kk Piezo-electric conversion device
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JPS5456785A (en) * 1977-10-14 1979-05-08 Citizen Watch Co Ltd Container for microminiature piezoelectric oscillator
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US4633124A (en) * 1982-03-16 1986-12-30 Kabushiki Kaisha Daini Seikosha Mount for quartz crystal resonator
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JPS6094758A (ja) * 1983-10-28 1985-05-27 Toko Inc 抵抗調整装置とその製造方法
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JPS6263828A (ja) * 1985-09-06 1987-03-20 Yokogawa Electric Corp 振動式トランスジューサ
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US4906840A (en) * 1988-01-27 1990-03-06 The Board Of Trustees Of Leland Stanford Jr., University Integrated scanning tunneling microscope

Also Published As

Publication number Publication date
CA2033318C (en) 1995-10-24
JPH0537287A (ja) 1993-02-12
CA2033318A1 (en) 1991-07-04
US5023503A (en) 1991-06-11
DE4100060A1 (de) 1991-08-08
DE4100060C2 (de) 1995-06-08

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