WO2026016669A1 - Array substrate, display panel, and display apparatus - Google Patents
Array substrate, display panel, and display apparatusInfo
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- WO2026016669A1 WO2026016669A1 PCT/CN2025/099608 CN2025099608W WO2026016669A1 WO 2026016669 A1 WO2026016669 A1 WO 2026016669A1 CN 2025099608 W CN2025099608 W CN 2025099608W WO 2026016669 A1 WO2026016669 A1 WO 2026016669A1
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/1336—Illuminating devices
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
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Abstract
Description
相关申请的交叉引用Cross-reference to related applications
本申请要求在2024年7月15日提交中华人民共和国国家知识产权局、申请号为202410944863.8、发明名称为“阵列基板、显示面板及显示装置”的中国专利申请的优先权,其全部内容通过引用结合在本申请中。This application claims priority to Chinese Patent Application No. 202410944863.8, filed on July 15, 2024, entitled "Array Substrate, Display Panel and Display Device", the entire contents of which are incorporated herein by reference.
本公开涉及显示技术领域,尤其涉及一种阵列基板、显示面板及显示装置。This disclosure relates to the field of display technology, and in particular to an array substrate, a display panel, and a display device.
薄膜晶体管液晶显示器(Thin Film Transistor Liquid Crystal Display,TFT-LCD)具有体积小、功耗低、画质高、无辐射和携带方便等特点,近年来得到了迅速地发展,已逐渐取代传统的阴极射线管显示装置(Cathode Ray Tube display,CRT),在当前的平板显示器市场中占据了主导地位。目前,TFT-LCD在各种大中小尺寸的产品上得到了广泛的应用,几乎涵盖了当今信息社会的主要电子产品,如液晶电视、高清晰度数字电视、电脑(台式和笔记本)、手机、平板电脑、导航仪、车载显示、投影显示、摄像机、数码相机、电子手表、计算器、电子仪器、仪表、公共显示和虚幻显示等。Thin-film transistor liquid crystal displays (TFT-LCDs) are characterized by their small size, low power consumption, high image quality, no radiation, and portability. They have experienced rapid development in recent years and have gradually replaced traditional cathode ray tube (CRT) displays, dominating the current flat panel display market. Currently, TFT-LCDs are widely used in products of various sizes, covering almost all major electronic products in today's information society, such as LCD TVs, high-definition digital TVs, computers (desktop and laptop), mobile phones, tablets, navigation systems, in-vehicle displays, projection displays, cameras, digital cameras, electronic watches, calculators, electronic instruments, meters, public displays, and virtual displays.
本公开提供的阵列基板、显示面板及显示装置,具体方案如下:The array substrate, display panel, and display device disclosed herein are specifically designed as follows:
一方面,本公开实施例提供了一种阵列基板,包括:On one hand, embodiments of this disclosure provide an array substrate, including:
衬底基板;Substrate;
多个像素电极,在所述衬底基板上呈阵列排布;Multiple pixel electrodes are arranged in an array on the substrate.
多条数据线,在所述像素电极的部分列间隙处延伸;Multiple data lines extend at the partial column gaps of the pixel electrodes;
多条栅线,在所述像素电极的行间隙处延伸,同一行间隙处包括两条所述栅线;Multiple gate lines extend at the row gaps of the pixel electrodes, with two gate lines at the same row gap;
多条公共电极线,在所述像素电极的间隙处延伸,且所述公共电极线与所述数据线同层、间隔设置,所述公共电极线包括用于支撑隔垫物的基台部,所述基台部在所述衬底基板上的正投影位于两条所述栅线在所述衬底基板上的正投影之间。Multiple common electrode lines extend at the gaps between the pixel electrodes, and the common electrode lines are arranged on the same layer as the data lines and spaced apart. The common electrode lines include a base portion for supporting spacers, and the orthographic projection of the base portion on the substrate is located between the orthographic projections of the two gate lines on the substrate.
在一些实施例中,在本公开实施例提供的上述阵列基板中,还包括与所述多条公共电极线电连接的公共电极,所述公共电极包括交叉且一体设置的第一条状公共电极和第二条状公共电极;其中,In some embodiments, the array substrate provided in this disclosure further includes a common electrode electrically connected to the plurality of common electrode lines, the common electrode including a first strip-shaped common electrode and a second strip-shaped common electrode that are intersected and integrally disposed; wherein...
所述第一条状公共电极在所述衬底基板上的正投影位于两条所述栅线在所述衬底基板上的正投影之间,所述第二条状公共电极与所述数据线在所述像素电极的不同列间隙处交替设置。The orthographic projection of the first strip common electrode on the substrate is located between the orthographic projections of the two gate lines on the substrate, and the second strip common electrode and the data line are alternately arranged at different column gaps of the pixel electrode.
在一些实施例中,在本公开实施例提供的上述阵列基板中,所述多条公共电极线包括第一公共电极线,所述第一公共电极线与所述第一条状公共电极电连接,且所述第一条状公共电极在所述衬底基板上的正投影与所述第一公共电极线在所述衬底基板上的正投影至少部分交叠。In some embodiments, in the array substrate provided in the present disclosure, the plurality of common electrode lines include a first common electrode line, the first common electrode line being electrically connected to the first strip-shaped common electrode, and the orthographic projection of the first strip-shaped common electrode on the substrate at least partially overlapping the orthographic projection of the first common electrode line on the substrate.
在一些实施例中,在本公开实施例提供的上述阵列基板中,还包括与所述多条栅线同层设置的转接线,所述转接线连接在相邻两个所述第一公共电极线之间。In some embodiments, the array substrate provided in the present disclosure further includes a transition line disposed on the same layer as the plurality of gate lines, the transition line being connected between two adjacent first common electrode lines.
在一些实施例中,在本公开实施例提供的上述阵列基板中,还包括位于所述多条数据线所在层与所述多条栅线所在层的第一绝缘层,以及位于所述多条数据线所在层与所述公共电极所在层之间的第二绝缘层;其中,In some embodiments, the array substrate provided in this disclosure further includes a first insulating layer located between the layer containing the plurality of data lines and the layer containing the plurality of gate lines, and a second insulating layer located between the layer containing the plurality of data lines and the layer containing the common electrode; wherein,
所述第一绝缘层和所述第二绝缘层包括贯通设置的第一过孔,所述第一过孔在所述衬底基板上的正投影与所述转接线在所述衬底基板上的正投影部分交叠;The first insulating layer and the second insulating layer include a through-hole, wherein the orthographic projection of the first through-hole on the substrate overlaps with the orthographic projection of the adapter line on the substrate.
所述第二绝缘层包括与所述第一过孔导通设置的第二过孔,所述第二过孔在所述衬底基板上的正投影与所述第一条状公共电极在所述衬底基板上的正投影部分交叠;The second insulating layer includes a second via that is conductively connected to the first via, wherein the orthographic projection of the second via on the substrate overlaps with the orthographic projection of the first strip common electrode on the substrate.
所述第一条状公共电极通过所述第一过孔与所述转接线电连接,且所述第一条状公共电极线通过所述第二过孔与所述第一公共电极线电连接。The first strip-shaped common electrode is electrically connected to the adapter cable through the first via, and the first strip-shaped common electrode line is electrically connected to the first common electrode line through the second via.
在一些实施例中,在本公开实施例提供的上述阵列基板中,所述多条公共电极线还包括第二公共电极线,所述第二公共电极线与所述第二条状公共电极电连接,且所述第二条状公共电极在所述衬底基板上的正投影与所述第二公共电极线在所述衬底基板上的正投影至少部分交叠。In some embodiments, in the array substrate provided in the present disclosure, the plurality of common electrode lines further include a second common electrode line, the second common electrode line being electrically connected to the second strip-shaped common electrode, and the orthographic projection of the second strip-shaped common electrode on the substrate at least partially overlapping the orthographic projection of the second common electrode line on the substrate.
在一些实施例中,在本公开实施例提供的上述阵列基板中,还包括位于所述多条数据线所在层与所述公共电极所在层之间的第二绝缘层,所述第二绝缘层包括第三过孔,所述第二公共电极线通过所述第三过孔与所述第二条状公共电极电连接。In some embodiments, the array substrate provided in this disclosure further includes a second insulating layer located between the layer containing the plurality of data lines and the layer containing the common electrode. The second insulating layer includes a third via, and the second common electrode line is electrically connected to the second strip-shaped common electrode through the third via.
在一些实施例中,在本公开实施例提供的上述阵列基板中,所述第三过孔在所述衬底基板上的正投影与所述基台部在所述衬底基板上的正投影至少部分交叠。In some embodiments, in the array substrate provided in the present disclosure, the orthographic projection of the third via on the substrate at least partially overlaps with the orthographic projection of the pedestal portion on the substrate.
在一些实施例中,在本公开实施例提供的上述阵列基板中,所述第二条状公共电极包括凸台结构,所述凸台结构在所述衬底基板上的正投影覆盖所述第三过孔在所述衬底基板上的正投影且位于所述基台部在所述衬底基板上的正投影内。In some embodiments, in the array substrate provided in the present disclosure, the second strip-shaped common electrode includes a boss structure, the orthographic projection of the boss structure on the substrate covers the orthographic projection of the third via on the substrate and is located within the orthographic projection of the base portion on the substrate.
在一些实施例中,在本公开实施例提供的上述阵列基板中,还包括位于所述像素电极的行间隙处的多个晶体管和多个连接结构;其中,In some embodiments, the array substrate provided in this disclosure further includes a plurality of transistors and a plurality of connection structures located at the row gaps of the pixel electrodes; wherein,
所述连接结构在所述衬底基板上的正投影与所述第二条状公共电极在所述衬底基板上的正投影相互交叉;The orthographic projection of the connection structure on the substrate intersects with the orthographic projection of the second strip-shaped common electrode on the substrate;
在相邻两条所述数据线之间,所述像素电极的同一行间隙处设有两个所述晶体管;其中一个所述晶体管通过所述连接结构与所述像素电极电连接。Between two adjacent data lines, two transistors are provided at the same row gap of the pixel electrode; one of the transistors is electrically connected to the pixel electrode through the connection structure.
在一些实施例中,在本公开实施例提供的上述阵列基板中,还包括位于所述像素电极行间隙处的多个补偿结构,所述补偿结构与未对应所述连接结构的所述晶体管电连接,且所述补偿结构在所述衬底基板上的正投影与所述第二条状公共电极在所述衬底基板上的正投影相互交叉,所述连接结构的部分与所述补偿结构在两条所述栅线两侧关于所述第一条状公共电极大致对称设置。In some embodiments, the array substrate provided in this disclosure further includes a plurality of compensation structures located at the gaps between the pixel electrode rows. The compensation structures are electrically connected to the transistors that do not correspond to the connection structures, and the orthographic projection of the compensation structures on the substrate intersects with the orthographic projection of the second strip common electrode on the substrate. A portion of the connection structure and the compensation structure are arranged approximately symmetrically about the first strip common electrode on both sides of the two gate lines.
在一些实施例中,在本公开实施例提供的上述阵列基板中,还包括与所述晶体管的有源层同层的第一图案,所述第一图案在所述衬底基板上的正投影与所述数据线所在层的图案在所述衬底基板上的正投影大致重合。In some embodiments, the array substrate provided in the present disclosure further includes a first pattern on the same layer as the active layer of the transistor, wherein the orthographic projection of the first pattern on the substrate substantially coincides with the orthographic projection of the pattern of the layer containing the data line on the substrate.
在一些实施例中,在本公开实施例提供的上述阵列基板中,所述公共电极还包括多条第三条状公共电极,所述第三条状公共电极与所述数据线位于所述像素电极的相同列间隙处。In some embodiments, in the array substrate provided in the present disclosure, the common electrode further includes a plurality of third strip-shaped common electrodes, which are located at the same column gap as the data line of the pixel electrode.
在一些实施例中,在本公开实施例提供的上述阵列基板中,至少部分所述第三条状公共电极位于沿行方向排列的相邻两个所述像素电极之间。In some embodiments, in the array substrate provided in the present disclosure, at least a portion of the third strip common electrode is located between two adjacent pixel electrodes arranged along the row direction.
在一些实施例中,在本公开实施例提供的上述阵列基板中,所述数据线一侧的所述第三条状公共电极位于沿行方向排列的相邻两个所述像素电极之间,所述数据线另一侧的所述第三条状公共电极贯穿所述像素电极的列间隙、并与所述第一条状公共电极相交。In some embodiments, in the array substrate provided in the present disclosure, the third strip-shaped common electrode on one side of the data line is located between two adjacent pixel electrodes arranged along the row direction, and the third strip-shaped common electrode on the other side of the data line passes through the column gap of the pixel electrodes and intersects with the first strip-shaped common electrode.
在一些实施例中,在本公开实施例提供的上述阵列基板中,还包括与所述像素电极同层的第二图案,所述第二图案在所述衬底基板上的正投影与所述栅线所在层的图案在所述衬底基板上的正投影大致重合。In some embodiments, the array substrate provided in the present disclosure further includes a second pattern on the same layer as the pixel electrode, wherein the orthographic projection of the second pattern on the substrate generally coincides with the orthographic projection of the pattern of the layer containing the gate line on the substrate.
另一方面,本公开实施例提供了一种显示面板,包括相对而置的阵列基板和对向基板;其中,On the other hand, embodiments of this disclosure provide a display panel, including an array substrate and a counter substrate placed opposite each other; wherein,
所述阵列基板为本公开实施例提供的上述阵列基板;The array substrate is the array substrate provided in the embodiments of this disclosure;
所述对向基板包括隔垫物,所述隔垫物朝向所述阵列基板的端部在所述衬底基板上的正投影与所述基台部在所述衬底基板上的正投影相互交叠。The opposing substrate includes a spacer, and the orthographic projection of the end of the spacer facing the array substrate onto the substrate overlaps with the orthographic projection of the pedestal portion onto the substrate.
另一方面,本公开实施例提供了一种显示装置,包括本公开实施例提供的上述显示面板,以及位于所述显示面板入光侧的背光模组。On the other hand, this disclosure provides a display device, including the display panel provided in this disclosure and a backlight module located on the light-incident side of the display panel.
图1为本公开实施例提供的阵列基板中四个子像素的一种结构示意图;Figure 1 is a schematic diagram of a structure of four sub-pixels in an array substrate provided in an embodiment of this disclosure;
图2为本公开实施例提供的阵列基板中四个子像素的又一种结构示意图;Figure 2 is a schematic diagram of another structure of four sub-pixels in the array substrate provided in the embodiment of this disclosure;
图3为本公开实施例提供的阵列基板中四个子像素的又一种结构示意图;Figure 3 is a schematic diagram of another structure of four sub-pixels in the array substrate provided in the embodiment of this disclosure;
图4为本公开实施例提供的阵列基板中四个子像素的又一种结构示意图;Figure 4 is a schematic diagram of another structure of four sub-pixels in the array substrate provided in the embodiment of this disclosure;
图5为本公开实施例提供的阵列基板中四个子像素的又一种结构示意图;Figure 5 is a schematic diagram of another structure of four sub-pixels in the array substrate provided in the embodiment of this disclosure;
图6为沿图1、图3和图5中a-a’线的截面图;Figure 6 is a cross-sectional view along line a-a’ in Figures 1, 3 and 5;
图7为沿图1、图2、图4中b-b’线的截面图;Figure 7 is a cross-sectional view along line b-b’ in Figures 1, 2, and 4;
图8为沿图2和图4中c-c’线的截面图;Figure 8 is a cross-sectional view along line c-c' in Figures 2 and 4;
图9为沿图3和图5中d-d’线的截面图;Figure 9 is a cross-sectional view along line d-d’ in Figures 3 and 5;
图10为图1至图5中像素电极所在层的结构示意图;Figure 10 is a schematic diagram of the structure of the layer where the pixel electrodes are located in Figures 1 to 5;
图11为图1至图5中栅线所在层的结构示意图;Figure 11 is a schematic diagram of the structure of the layer containing the grid lines in Figures 1 to 5;
图12为图1中有源层的结构示意图;Figure 12 is a schematic diagram of the active layer in Figure 1;
图13为图1中数据线所在层的结构示意图;Figure 13 is a schematic diagram of the structure of the layer where the data line is located in Figure 1;
图14为图1、图3、图5中过孔所在层的结构示意图;Figure 14 is a schematic diagram of the structure of the layer where the vias are located in Figures 1, 3, and 5;
图15为图1中公共电极所在层的结构示意图;Figure 15 is a schematic diagram of the structure of the layer where the common electrode is located in Figure 1;
图16为图2和图4中数据线所在层的结构示意图;Figure 16 is a schematic diagram of the structure of the layer where the data lines are located in Figures 2 and 4;
图17为图2和图4中过孔所在层的结构示意图;Figure 17 is a schematic diagram of the structure of the layer where the vias are located in Figures 2 and 4;
图18为图2中公共电极所在层的结构示意图;Figure 18 is a schematic diagram of the structure of the layer where the common electrode is located in Figure 2;
图19为图4中公共电极所在层的结构示意图;Figure 19 is a schematic diagram of the structure of the layer where the common electrode is located in Figure 4;
图20为图3和图5中数据线所在层的结构示意图;Figure 20 is a schematic diagram of the structure of the layer where the data lines are located in Figures 3 and 5;
图21为图3和图5中公共电极所在层的结构示意图;Figure 21 is a schematic diagram of the structure of the layer where the common electrode is located in Figures 3 and 5;
图22为图2和图4中有源层的结构示意图;Figure 22 is a schematic diagram of the active layer structure in Figures 2 and 4;
图23为图3和图5中有源层的结构示意图;Figure 23 is a schematic diagram of the active layer structure in Figures 3 and 5;
图24为本公开实施例提供的显示面板的一种结构示意图;Figure 24 is a schematic diagram of a display panel provided in an embodiment of this disclosure;
图25为本公开实施例提供的显示面板的又一种结构示意图;Figure 25 is a schematic diagram of another structure of the display panel provided in an embodiment of this disclosure;
图26为本公开实施例提供的显示装置的一种结构示意图;Figure 26 is a schematic diagram of a display device provided in an embodiment of the present disclosure;
图27为本公开实施例提供的显示装置的又一种结构示意图。Figure 27 is a schematic diagram of another structure of the display device provided in the embodiments of this disclosure.
为使本公开实施例的目的、技术方案和优点更加清楚,下面将结合本公开实施例的附图,对本公开实施例的技术方案进行清楚、完整地描述。需要注意的是,在附图中,为了清楚,放大了层、膜、面板、区域等的厚度。在本公开中参照作为理想化实施方式的示意图的横截面图描述示例性实施方式。这样,将预计到作为例如制造技术和/或公差的结果的与图的形状的偏差。因而,本公开中描述的实施方式不应解释为限于如本公开中所示的区域的具体形状,而是包括由例如制造所导致的形状方面的偏差。例如,图示或描述为平坦的区域可典型地具有粗糙的和/或非线性的特征;所图示的尖锐的角可为圆形的等。因而,图中所示的区域在本质上是示意性的,并且它们的尺寸和形状不意图图示区域的精确形状、不反映真实比例,目的只是示意说明本公开内容。并且自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。为了保持本公开实施例的以下说明清楚且简明,本公开省略了已知功能和已知部件的详细说明。To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. It should be noted that, for clarity, the thickness of layers, films, panels, regions, etc., is enlarged in the drawings. Exemplary embodiments are described in this disclosure with reference to cross-sectional views as schematic diagrams of idealized embodiments. Thus, deviations from the shape of the figures will be expected as a result of, for example, manufacturing techniques and/or tolerances. Therefore, the embodiments described in this disclosure should not be construed as limited to the specific shape of the regions shown in this disclosure, but rather include deviations in shape caused, for example, by manufacturing processes. For example, a region illustrated or described as flat may typically have rough and/or non-linear characteristics; a sharp corner illustrated may be rounded, etc. Therefore, the regions shown in the figures are schematic in nature, and their dimensions and shapes are not intended to illustrate the precise shape of the regions or reflect true proportions; their purpose is merely to illustrate the content of this disclosure. And throughout, the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions. To keep the following description of the embodiments of this disclosure clear and concise, detailed descriptions of known functions and known components are omitted.
除非另作定义,此处使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开说明书以及权利要求书中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接,而是可以包括电性的连接,不管是直接的还是间接的。“内”、“外”、“上”、“下”等仅用于表示相对位置关系,当被描述对象的绝对位置改变后,则该相对位置关系也可能相应地改变。Unless otherwise defined, the technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” and similar terms used in this disclosure and the claims do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as “comprising” or “including” mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, without excluding other elements or objects. Terms such as “connected” or “linked” are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. Terms such as “inner,” “outer,” “upper,” and “lower” are used only to indicate relative positional relationships, and these relative positional relationships may change accordingly when the absolute position of the described object changes.
在下面的描述中,当元件或层被称作“在”另一元件或层“上”或“连接到”另一元件或层时,该元件或层可以直接在所述另一元件或层上、直接连接到所述另一元件或层,或者可以存在中间元件或中间层。当元件或层被称作“设置于”另一元件或层“的一侧”时,该元件或层可以直接在所述另一元件或层的一侧,直接连接到所述另一元件或层,或者可以存在中间元件或中间层。然而,当元件或层被称作“直接在”另一元件或层“上”、“直接连接到”另一元件或层时,不存在中间元件或中间层。术语“和/或”包括一个或更多个相关列出项的任意和全部组合。In the following description, when an element or layer is referred to as "on" or "connected to" another element or layer, the element or layer may be directly on or directly connected to the other element or layer, or there may be intermediate elements or intermediate layers. When an element or layer is referred to as "located on one side of" another element or layer, the element or layer may be directly on or directly connected to the other element or layer, or there may be intermediate elements or intermediate layers. However, when an element or layer is referred to as "directly on" or "directly connected to" another element or layer, no intermediate elements or intermediate layers are present. The term "and/or" includes any and all combinations of one or more of the related listed items.
双栅(Dual Gate)像素通俗是指将显示区(AA)的栅线(Gate line)数量翻倍,数据线(Data line)数量减半的像素架构,可减少一半的源极驱动电路(Source COF)使用量,从而节省成本。Dual-gate pixels, in layman's terms, refer to a pixel architecture where the number of gate lines in the display area (AA) is doubled and the number of data lines is halved. This reduces the amount of source drive circuitry (COF) used by half, thereby saving costs.
然而,在一些实施例中,用于支撑隔垫物(PS)的基台设置在数据线上,用于为像素电极充电的晶体管靠近数据线设置,以致基台距离晶体管的双层金属(栅极与源漏极交叠)较近,受挤压时,PS可能会滑动至双层金属处卡位,难以回复;另外,PS受到挤压时,还可能滑动至像素开口区而划伤像素开口区,影响显示效果。However, in some embodiments, the base for supporting the spacer (PS) is located on the data line, and the transistor for charging the pixel electrode is located close to the data line. As a result, the base is close to the double metal layer of the transistor (the gate and source/drain overlap). When squeezed, the PS may slide to the double metal layer and get stuck, making it difficult to return to its original position. In addition, when the PS is squeezed, it may also slide to the pixel opening area and scratch the pixel opening area, affecting the display effect.
为了至少改善相关技术中存在的上述技术问题,本公开实施例提供了一种阵列基板。图1至图5所示为本公开实施例提供的阵列基板中四个子像素的结构示意图,图6为沿图1、图3和图5中a-a’线的截面图,图7为沿图1、图2、图4中b-b’线的截面图,图8为沿图2和图4中c-c’线的截面图,图9为沿图3和图5中d-d’线的截面图,图10为图1至图5中像素电极所在层的结构示意图,图11为图1至图5中栅线所在层的结构示意图,图12为图1中有源层的结构示意图,图13为图1中数据线所在层的结构示意图,图14为图1、图3、图5中过孔所在层的结构示意图,图15为图1中公共电极所在层的结构示意图,图16为图2和图4中数据线所在层的结构示意图,图17为图2和图4中过孔所在层的结构示意图,图18为图2中公共电极所在层的结构示意图,图19为图4中公共电极所在层的结构示意图,图20为图3和图5中数据线所在层的结构示意图,图21为图3和图5中公共电极所在层的结构示意图,图22为图2和图4中有源层的结构示意图,图23为图3和图5中有源层的结构示意图。To at least improve the aforementioned technical problems existing in related technologies, this disclosure provides an array substrate. Figures 1 to 5 show schematic diagrams of the structure of four sub-pixels in the array substrate provided in this disclosure. Figure 6 is a cross-sectional view along line a-a' in Figures 1, 3, and 5; Figure 7 is a cross-sectional view along line b-b' in Figures 1, 2, and 4; Figure 8 is a cross-sectional view along line c-c' in Figures 2 and 4; Figure 9 is a cross-sectional view along line d-d' in Figures 3 and 5; Figure 10 is a schematic diagram of the structure of the layer containing the pixel electrodes in Figures 1 to 5; Figure 11 is a schematic diagram of the structure of the layer containing the gate lines in Figures 1 to 5; Figure 12 is a schematic diagram of the structure of the active layer in Figure 1; Figure 13 is a schematic diagram of the structure of the layer containing the data lines in Figure 1; Figure 14 is a schematic diagram of the structure of the layer containing the data lines in Figures 1, 2, and 4. 3. Figure 5 shows the structural schematic diagram of the layer containing the vias; Figure 15 shows the structural schematic diagram of the layer containing the common electrode in Figure 1; Figure 16 shows the structural schematic diagram of the layer containing the data lines in Figures 2 and 4; Figure 17 shows the structural schematic diagram of the layer containing the vias in Figures 2 and 4; Figure 18 shows the structural schematic diagram of the layer containing the common electrode in Figure 2; Figure 19 shows the structural schematic diagram of the layer containing the common electrode in Figure 4; Figure 20 shows the structural schematic diagram of the layer containing the data lines in Figures 3 and 5; Figure 21 shows the structural schematic diagram of the layer containing the common electrode in Figures 3 and 5; Figure 22 shows the structural schematic diagram of the active layer in Figures 2 and 4; and Figure 23 shows the structural schematic diagram of the active layer in Figures 3 and 5.
在一些实施例中,本公开实施例提供的阵列基板,如图1至图5、图10至图15所示,可以包括:In some embodiments, the array substrate provided in this disclosure, as shown in Figures 1 to 5 and Figures 10 to 15, may include:
衬底基板101,可选地,衬底基板101包括显示区(AA)、以及位于显示区(AA)至少一侧的非显示区;在一些实施例中,显示区(AA)包括阵列排布的红色子像素区、绿色子像素区、蓝色子像素区等;衬底基板101为允许可见光透过的基板,例如为玻璃、石英、塑料等材质。Optionally, the substrate 101 includes a display area (AA) and a non-display area located on at least one side of the display area (AA). In some embodiments, the display area (AA) includes an array of red sub-pixel areas, green sub-pixel areas, blue sub-pixel areas, etc. The substrate 101 is a substrate that allows visible light to pass through, such as glass, quartz, plastic, etc.
多个像素电极102,在显示区(AA)呈阵列排布,可选地,像素电极102为块状电极;在一些实施例中,像素电极102可以包括氧化铟锡(ITO)、氧化铟锌(IZO)、氧化铝锌(AZO)、氧化镓锌(GZO)等至少一种透明导电材料。Multiple pixel electrodes 102 are arranged in an array in the display area (AA). Optionally, the pixel electrodes 102 are block electrodes. In some embodiments, the pixel electrodes 102 may include at least one transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), and gallium zinc oxide (GZO).
多条数据线103,在像素电极102的部分列间隙处延伸,例如数据线103在像素电极102的奇数或偶数列间隙处延伸。在一些实施例中,数据线103所在层(即源漏金属层)的材料可以包括金(Au)、银(Ag)、铜(Cu)、钼(Mo)、铝(Al)、钛(Ti)、铬(Cr)、镍(Ni)等至少一种金属,源漏金属层可以为单层结构或叠层结构,例如源漏金属层为由钛金属层/铝金属层/钛金属层构成的叠层结构。Multiple data lines 103 extend at some of the column gaps of the pixel electrode 102, for example, the data lines 103 extend at the odd or even column gaps of the pixel electrode 102. In some embodiments, the material of the layer containing the data lines 103 (i.e., the source/drain metal layer) may include at least one metal such as gold (Au), silver (Ag), copper (Cu), molybdenum (Mo), aluminum (Al), titanium (Ti), chromium (Cr), and nickel (Ni). The source/drain metal layer may be a single-layer structure or a stacked structure, for example, the source/drain metal layer may be a stacked structure composed of a titanium metal layer/aluminum metal layer/titanium metal layer.
多条栅线104,在像素电极102的行间隙处延伸,本公开可采用双栅像素架构,这样同一行间隙处可以包括两条栅线104,数据线103的数量减半,利于降低成本。在一些实施例中,栅线104所在层(即栅金属层)的材料可以包括金(Au)、银(Ag)、铜(Cu)、钼(Mo)、铝(Al)、钛(Ti)、铬(Cr)、镍(Ni)等至少一种金属,栅金属层可以为单层结构或叠层结构,例如栅金属层为由钼金属层构成的单层结构;Multiple gate lines 104 extend at the row gaps of the pixel electrode 102. This disclosure can employ a dual-gate pixel architecture, where two gate lines 104 can be included at the same row gap, halving the number of data lines 103 and helping to reduce costs. In some embodiments, the material of the layer containing the gate lines 104 (i.e., the gate metal layer) can include at least one metal such as gold (Au), silver (Ag), copper (Cu), molybdenum (Mo), aluminum (Al), titanium (Ti), chromium (Cr), and nickel (Ni). The gate metal layer can be a single-layer structure or a stacked structure, for example, the gate metal layer can be a single-layer structure composed of a molybdenum metal layer.
多条公共电极线105,在像素电极102的间隙处延伸,可选地,公共电极线105与数据线103同层、间隔设置,公共电极线105包括用于支撑隔垫物(PS)的基台部PS’,基台部PS’在衬底基板101上的正投影位于同一行间隙处的两条栅线104在衬底基板101上的正投影之间,可选地,基台部PS’与两条数据线103之间的列间隙相交。在本公开中,“同层”指的是采用同一成膜工艺形成用于制作特定图形的膜层,然后利用同一掩模板通过一次构图工艺形成的层结构。即一次构图工艺对应一道掩模板(mask,也称光罩)。根据特定图形的不同,一次构图工艺可能包括多次曝光、显影或刻蚀工艺,而所形成层结构中的特定图形可以是连续的也可以是不连续的,这些特定图形可能处于相同的高度或者具有相同的厚度、也可能处于不同的高度或者具有不同的厚度。Multiple common electrode lines 105 extend at the gaps between pixel electrodes 102. Optionally, the common electrode lines 105 and data lines 103 are arranged in the same layer and spaced apart. The common electrode lines 105 include a base portion PS' for supporting spacers (PS). The orthographic projection of the base portion PS' on the substrate 101 is located between the orthographic projections of two gate lines 104 at the same row gap on the substrate 101. Optionally, the base portion PS' intersects with the column gap between the two data lines 103. In this disclosure, "same layer" refers to a layer structure formed by using the same film deposition process to form a film layer for creating a specific pattern, and then using the same mask to form a patterning process in one step. That is, one patterning process corresponds to one mask (also called photomask). Depending on the specific pattern, the one patterning process may include multiple exposure, development, or etching processes, and the specific pattern in the formed layer structure may be continuous or discontinuous. These specific patterns may be at the same height or have the same thickness, or they may be at different heights or have different thicknesses.
在本公开实施例提供的上述阵列基板中,将支撑隔垫物(PS)的基台部PS’由数据线103上迁移至公共电极线104上,一方面,可增大隔垫物(PS)在水平方向上与双层金属的距离,避免隔垫物(PS)滑动至双层金属处卡位,难以回复;另一方面,隔垫物(PS)受到挤压时,沿横向和纵向滑动距离较长,斜向距离短,基台部PS’位于双栅之间,可最小化和平均化隔垫物(PS)对像素开口区的划伤影响,有利于提升显示均一性。In the array substrate provided in the embodiments of this disclosure, the base portion PS’ of the spacer (PS) is moved from the data line 103 to the common electrode line 104. On the one hand, this increases the distance between the spacer (PS) and the double-layer metal in the horizontal direction, preventing the spacer (PS) from sliding to the double-layer metal and getting stuck, making it difficult to recover. On the other hand, when the spacer (PS) is squeezed, the sliding distance in the horizontal and vertical directions is longer, while the oblique distance is shorter. The base portion PS’ is located between the double gates, which can minimize and average the scratching effect of the spacer (PS) on the pixel opening area, which is beneficial to improving display uniformity.
在一些实施例中,在本公开实施例提供的上述阵列基板中,如图1至图5、图7、图10、图11、图13、图15、图16、图18至图21所示,还可以包括与多条公共电极线105电连接的公共电极106,公共电极106可以为狭缝电极,公共电极106位于狭缝之间的部分可标记为第四条状公共电极1064,公共电极106的材料可以包括氧化铟锡(ITO)、氧化铟锌(IZO)、氧化铝锌(AZO)、氧化镓锌(GZO)等至少一种透明导电材料;公共电极106可以包括交叉且一体设置的第一条状公共电极1061和第二条状公共电极1062;其中,第一条状公共电极1061在衬底基板101上的正投影位于两条栅线104在衬底基板101上的正投影之间,第二条状公共电极1062与数据线103在像素电极102的不同列间隙处交替设置。第一条状公共电极1061和第二条状公共电极1062构成交错连接网络,能够大幅提高公共电压(VCOM)均一性,进而改善VOM均一性差造成的摇头纹、横向串扰(H-crosstalk)、水纹(Waterfall)等画面不良,提升产品规格。In some embodiments, the array substrate provided in the present disclosure, as shown in Figures 1 to 5, 7, 10, 11, 13, 15, 16, and 18 to 21, may further include a common electrode 106 electrically connected to multiple common electrode lines 105. The common electrode 106 may be a slit electrode, and the portion of the common electrode 106 located between the slits may be labeled as a fourth strip-shaped common electrode 1064. The material of the common electrode 106 may include at least one transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), or gallium zinc oxide (GZO). The common electrode 106 may include a first strip-shaped common electrode 1061 and a second strip-shaped common electrode 1062 that are intersected and integrally disposed. The orthographic projection of the first strip-shaped common electrode 1061 on the substrate 101 is located between the orthographic projections of the two gate lines 104 on the substrate 101, and the second strip-shaped common electrode 1062 and the data line 103 are alternately disposed at different column gaps of the pixel electrode 102. The first strip common electrode 1061 and the second strip common electrode 1062 form an interleaved connection network, which can significantly improve the uniformity of the common voltage (VCOM), thereby improving image defects such as head-shaking patterns, lateral crosstalk, and waterfall caused by poor VOM uniformity, and improving product specifications.
在一些实施例中,在本公开实施例提供的上述阵列基板中,如图1、图3、图5、图6、图11、图15和图21所示,多条公共电极线105可以包括第一公共电极线1051,第一公共电极线1051与第一条状公共电极1061电连接,且第一条状公共电极1061在衬底基板101上的正投影与第一公共电极线1051在衬底基板101上的正投影至少部分交叠,可选地,第一条状公共电极1061在衬底基板101上的正投影位于第一公共电极线1051在衬底基板101上的正投影内,第一公共电极线1051在衬底基板101上的正投影位于两条栅线104在衬底基板101上的正投影之间。异层且同向延伸的第一公共电极线1051与第一条状公共电极1061并联,可有效降低整体的走线电阻,利于提高VCOM的均一性。In some embodiments, in the array substrate provided in the present disclosure, as shown in Figures 1, 3, 5, 6, 11, 15, and 21, multiple common electrode lines 105 may include a first common electrode line 1051. The first common electrode line 1051 is electrically connected to a first strip-shaped common electrode 1061, and the orthographic projection of the first strip-shaped common electrode 1061 on the substrate 101 at least partially overlaps with the orthographic projection of the first common electrode line 1051 on the substrate 101. Optionally, the orthographic projection of the first strip-shaped common electrode 1061 on the substrate 101 is located within the orthographic projection of the first common electrode line 1051 on the substrate 101, and the orthographic projection of the first common electrode line 1051 on the substrate 101 is located between the orthographic projections of the two gate lines 104 on the substrate 101. The first common electrode line 1051 and the first strip-shaped common electrode 1061, which are of different layers and extend in the same direction, are connected in parallel, which can effectively reduce the overall trace resistance and improve the uniformity of VCOM.
在一些实施例中,在本公开实施例提供的上述阵列基板中,如图1、图3、图5、图6、图11、图15和图21所示,还可以包括与多条栅线104同层设置的转接线107,转接线107连接在相邻两个第一公共电极线1051之间,以避免第一公共电极线1051与同层设置的数据线103短接。In some embodiments, the array substrate provided in the present disclosure, as shown in FIG1, FIG3, FIG5, FIG6, FIG11, FIG15 and FIG21, may further include a transition line 107 disposed on the same layer as the multiple gate lines 104. The transition line 107 is connected between two adjacent first common electrode lines 1051 to avoid the first common electrode lines 1051 from being short-circuited with the data lines 103 disposed on the same layer.
在一些实施例中,在本公开实施例提供的上述阵列基板中,如图6所示,还可以包括位于多条数据线103所在层(即公共电极线105所在层)与多条栅线104所在层(即转接线107所在层)的第一绝缘层108,以及位于多条数据线103所在层(即公共电极线105所在层)与公共电极106所在层之间的第二绝缘层109。其中,第一绝缘层108、第二绝缘层109的材料可以采用硅氧化物(SiOx)、硅氮化物(SiNx)、氮氧化硅(SiON)等,也可以采用氧化铝(AlOx)、氧化铪(HfOx)、氧化钽(TaOx)等,可以是单层或叠层。第一绝缘层108和第二绝缘层109可以包括贯通设置的第一过孔V1,第一过孔V1在衬底基板101上的正投影与转接线107在衬底基板101上的正投影部分交叠,在一些实施例中,第一过孔V1在衬底基板101上的正投影位于转接线107在衬底基板101上的正投影内;第二绝缘层109还包括与第一过孔V1导通设置的第二过孔V2,第二过孔V2在衬底基板101上的正投影与第一条状公共电极1061在衬底基板101上的正投影部分交叠,例如第二过孔V2在衬底基板101上的正投影位于第一条状公共电极1061在衬底基板101上的正投影内;第一条状公共电极1061通过第一过孔V1与转接线107电连接,且第一条状公共电极线1061通过第二过孔V2与第一公共电极线1051电连接。第一过孔V1与第二过孔V2共同构成一个阶梯状的半过孔,有利于配向液(PI)在显示区(AA)内均匀扩散,避免黑Mura发生。In some embodiments, the array substrate provided in this disclosure, as shown in FIG6, may further include a first insulating layer 108 located between the layer containing the multiple data lines 103 (i.e., the layer containing the common electrode line 105) and the layer containing the multiple gate lines 104 (i.e., the layer containing the adapter line 107), and a second insulating layer 109 located between the layer containing the multiple data lines 103 (i.e., the layer containing the common electrode line 105) and the layer containing the common electrode 106. The materials of the first insulating layer 108 and the second insulating layer 109 may be silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiON), etc., or aluminum oxide (AlOx), hafnium oxide (HfOx), tantalum oxide (TaOx), etc., and may be a single layer or a stacked layer. The first insulating layer 108 and the second insulating layer 109 may include a through-hole V1, the orthographic projection of the first via V1 on the substrate 101 overlapping the orthographic projection of the adapter line 107 on the substrate 101. In some embodiments, the orthographic projection of the first via V1 on the substrate 101 is located within the orthographic projection of the adapter line 107 on the substrate 101. The second insulating layer 109 also includes a second via V2 that is electrically connected to the first via V1, the orthographic projection of the second via V2 on the substrate 101 overlapping the orthographic projection of the first strip common electrode 1061 on the substrate 101. For example, the orthographic projection of the second via V2 on the substrate 101 is located within the orthographic projection of the first strip common electrode 1061 on the substrate 101. The first strip common electrode 1061 is electrically connected to the adapter line 107 through the first via V1, and the first strip common electrode line 1061 is electrically connected to the first common electrode line 1051 through the second via V2. The first via V1 and the second via V2 together form a stepped semi-via, which is conducive to the uniform diffusion of the alignment liquid (PI) in the display area (AA) and avoids black mura.
在一些实施例中,在本公开实施例提供的上述阵列基板中,如图2、图7、图8、图16和图18所示,多条公共电极线105还可以包括第二公共电极线1052,第二公共电极线1052与第二条状公共电极1062电连接,且第二条状公共电极1062在衬底基板101上的正投影与第二公共电极线1052在衬底基板101上的正投影至少部分交叠,例如第二条状公共电极1062在衬底基板101上的正投影位于第二公共电极线1052在衬底基板101上的正投影内,第二公共电极线1052与数据线103在像素电极102的不同列间隙处交替设置,第一条状公共电极1061直接跨越数据线103,这样不仅可以提升VCOM的均一性,还可以保证像素负载基本不变。In some embodiments, as shown in FIG2, 7, 8, 16 and 18, the multiple common electrode lines 105 may further include a second common electrode line 1052. The second common electrode line 1052 is electrically connected to the second strip-shaped common electrode 1062, and the orthographic projection of the second strip-shaped common electrode 1062 on the substrate 101 at least partially overlaps with the orthographic projection of the second common electrode line 1052 on the substrate 101. For example, the orthographic projection of the second strip-shaped common electrode 1062 on the substrate 101 is located within the orthographic projection of the second common electrode line 1052 on the substrate 101. The second common electrode line 1052 and the data line 103 are alternately arranged at different column gaps of the pixel electrode 102. The first strip-shaped common electrode 1061 directly crosses the data line 103. This not only improves the uniformity of VCOM, but also ensures that the pixel load remains basically unchanged.
在一些实施例中,在本公开实施例提供的上述阵列基板中,如图8所示,第二绝缘层109可以包括第三过孔V3,第二公共电极线1052包括凸台结构1052’,凸台结构1052’通过第三过孔V3与第二条状公共电极1062电连接,可选地,第三过孔V3在衬底基板101上的正投影与基台部PS’在衬底基板101上的正投影至少部分交叠,例如第三过孔V3在衬底基板101上的正投影位于基台部PS’在衬底基板101上的正投影内,凸台结构1052’在衬底基板101上的正投影覆盖第三过孔V3在衬底基板101上的正投影且位于基台部PS’在衬底基板101上的正投影内,以避免在基台部PS’之外设置承载第三过孔V3的凸台结构1052’,进而可节约非开口区空间,提升像素透过率。In some embodiments, as shown in FIG8, in the array substrate provided in the present disclosure, the second insulating layer 109 may include a third via V3, and the second common electrode line 1052 includes a boss structure 1052'. The boss structure 1052' is electrically connected to the second strip-shaped common electrode 1062 through the third via V3. Optionally, the orthographic projection of the third via V3 on the substrate 101 and the orthographic projection of the base portion PS' on the substrate 101 at least partially overlap. For example, the orthographic projection of the third via V3 on the substrate 101 is located within the orthographic projection of the base portion PS' on the substrate 101, and the orthographic projection of the boss structure 1052' on the substrate 101 covers the orthographic projection of the third via V3 on the substrate 101 and is located within the orthographic projection of the base portion PS' on the substrate 101, so as to avoid setting the boss structure 1052' carrying the third via V3 outside the base portion PS', thereby saving non-opening area space and improving pixel transmittance.
值得注意的是,在一些实施例中,如图3、图5、图9和图20所示,可以省略第二公共电极线1052,在此情况下,可以减小两条数据线103之间两个像素电极102的间距,提升像素透过率。It is worth noting that in some embodiments, as shown in Figures 3, 5, 9 and 20, the second common electrode line 1052 can be omitted. In this case, the spacing between the two pixel electrodes 102 between the two data lines 103 can be reduced, thereby improving pixel transmittance.
在一些实施例中,在本公开实施例提供的上述阵列基板中,如图1至图5、图10、图11、图13、图15、图16、图18至图21所示,还可以包括位于像素电极102的行间隙处的多个晶体管110、多个连接结构111和多个补偿结构112;其中,在相邻两条数据线103之间同一行间隙处设有两个晶体管110;其中一个晶体管110通过连接结构111与像素电极102电连接,另一个晶体管110与补偿结构111、以及像素电极102电连接,且两个晶体管110电连接的两个像素电极102位于相邻行、相邻列。可选地,连接结构111、以及补偿结构112在衬底基板101上的正投影分别与第二条状公共电极1062在衬底基板101上的正投影相互交叉,且连接结构111的部分与补偿结构112在双栅两侧关于第一条状公共电极1061大致对称设置。这样设置可以使得连接结构111与栅线104的侧向电容大致等于补偿结构112与栅线104的侧向电容,并且连接结构111与第二条状公共电极1061的存储电容大致等于补偿结构112与第二条状电极1061的存储电容,从而使得不同像素电极102的充电率大致相同,利于提高显示品质。In some embodiments, the array substrate provided in this disclosure, as shown in Figures 1 to 5, 10, 11, 13, 15, 16, and 18 to 21, may further include a plurality of transistors 110, a plurality of connection structures 111, and a plurality of compensation structures 112 located at the row gaps of the pixel electrodes 102; wherein, two transistors 110 are provided at the same row gap between two adjacent data lines 103; one transistor 110 is electrically connected to the pixel electrode 102 through the connection structure 111, and the other transistor 110 is electrically connected to the compensation structure 111 and the pixel electrode 102, and the two pixel electrodes 102 electrically connected by the two transistors 110 are located in adjacent rows and adjacent columns. Optionally, the orthographic projections of the connection structure 111 and the compensation structure 112 on the substrate 101 intersect each other with the orthographic projections of the second strip-shaped common electrode 1062 on the substrate 101, and portions of the connection structure 111 and the compensation structure 112 are arranged approximately symmetrically about the first strip-shaped common electrode 1061 on both sides of the dual gate. This configuration ensures that the lateral capacitance of the connection structure 111 and the gate line 104 is approximately equal to the lateral capacitance of the compensation structure 112 and the gate line 104, and that the storage capacitance of the connection structure 111 and the second strip common electrode 1061 is approximately equal to the storage capacitance of the compensation structure 112 and the second strip electrode 1061. This results in the charging rates of different pixel electrodes 102 being approximately the same, which is beneficial for improving display quality.
在一些实施例中,在本公开实施例提供的上述阵列基板中,如图1至图5、图10、图15、图18、图19和图21所示,公共电极106还可以包括多条第三条状公共电极1063,第三条状公共电极1063与数据线103位于像素电极102的相同列间隙处,可选地,至少部分第三条状公共电极1063位于沿行方向排列的相邻两个像素电极102之间,例如在图1至图3、图10、图15和图18中,全部第三条状公共电极1063位于沿行方向排列的相邻两个像素电极102之间;在图4、图5、图10、图19和图21中,数据线103一侧的第三条状公共电极1063位于沿行方向排列的相邻两个像素电极102之间,数据线103另一侧的第三条状公共电极1063贯穿像素电极102的列间隙、并与第一条状公共电极1061相交。一方面,贯穿像素电极102列间隙的第三条状公共电极1063增大了公共电极网络密度,可以加强公共电极网络的电压均一性;另一方面,第二条状公共电极1062与第三条状公共电极1063并联,可以减小纵向公共电极的电阻,减小压降。In some embodiments, in the array substrate provided in the present disclosure, as shown in Figures 1 to 5, 10, 15, 18, 19, and 21, the common electrode 106 may further include multiple third strip-shaped common electrodes 1063. The third strip-shaped common electrodes 1063 and the data line 103 are located at the same column gap of the pixel electrode 102. Optionally, at least some of the third strip-shaped common electrodes 1063 are located between two adjacent pixel electrodes 102 arranged along the row direction, for example, in Figures 1 to 21. 3. In Figures 10, 15, and 18, all third strip-shaped common electrodes 1063 are located between two adjacent pixel electrodes 102 arranged along the row direction. In Figures 4, 5, 10, 19, and 21, the third strip-shaped common electrode 1063 on one side of the data line 103 is located between two adjacent pixel electrodes 102 arranged along the row direction, and the third strip-shaped common electrode 1063 on the other side of the data line 103 penetrates the column gaps of the pixel electrodes 102 and intersects with the first strip-shaped common electrode 1061. On the one hand, the third strip-shaped common electrode 1063 penetrating the column gaps of the pixel electrodes 102 increases the density of the common electrode network, which can enhance the voltage uniformity of the common electrode network. On the other hand, the second strip-shaped common electrode 1062 and the third strip-shaped common electrode 1063 are connected in parallel, which can reduce the resistance of the vertical common electrode and reduce the voltage drop.
在一些实施例中,在本公开实施例提供的上述阵列基板中,有源层AC可以与源漏金属层共用同一张掩膜版,在此情况下,如图12、图13、图16、图20、图22和图23所示,有源层AC可以包括与源漏金属层的数据线103、公共电极线105(包括第一公共电极线1051和/或第二公共电极线1052)、晶体管110的第一极S、第二极D分别对应且直接接触的第一图案103’、105’(包括1051’和/或1052’)、S’、D’,第一图案103’、105’(包括1051’和/或1052’)、S’、D’在衬底基板101上的正投影可以与源漏金属层的数据线103、公共电极线105(包括第一公共电极线1051和/或第二公共电极线1052)、晶体管110的第一极S、第二极D在衬底基板101上的正投影大致重合。In some embodiments, in the array substrate provided in this disclosure, the active layer AC can share the same mask as the source/drain metal layer. In this case, as shown in Figures 12, 13, 16, 20, 22, and 23, the active layer AC may include a first electrode line corresponding to and directly contacting the data line 103, the common electrode line 105 (including the first common electrode line 1051 and/or the second common electrode line 1052), the first electrode S, and the second electrode D of the transistor 110, respectively. The orthographic projections of the first patterns 103’, 105’ (including 1051’ and/or 1052’), S’, and D’ on the substrate 101 can substantially coincide with the orthographic projections of the data lines 103 and 105’ (including the first common electrode line 1051 and/or the second common electrode line 1052) of the source and drain metal layers, the first electrode S and the second electrode D of the transistor 110 on the substrate 101.
在一些实施例中,在本公开实施例提供的上述阵列基板中,像素电极102所在层可以与栅金属层共用同一张掩膜版,因此,如图10和图11所示,在像素电极102所在层可以包括与栅金属层的栅线104、转接线107、晶体管110的栅极G、连接结构111、补偿结构112分别对应且直接接触的第二图案104’、107’、G’、111’、112’,可选地,第二图案104’、107’、G’、111’、112’在衬底基板101上的正投影可以与栅金属层的栅线104、转接线107、以及晶体管110的栅极G在衬底基板101上的正投影大致重合。In some embodiments, in the array substrate provided in the present disclosure, the layer where the pixel electrode 102 is located can share the same mask as the gate metal layer. Therefore, as shown in FIG10 and FIG11, the layer where the pixel electrode 102 is located can include second patterns 104’, 107’, G’, 111’, and 112’ that correspond to and are in direct contact with the gate line 104, the adapter line 107, the gate G of the transistor 110, the connection structure 111, and the compensation structure 112 of the gate metal layer, respectively. Optionally, the orthographic projection of the second patterns 104’, 107’, G’, 111’, and 112’ on the substrate 101 can substantially coincide with the orthographic projection of the gate line 104, the adapter line 107, and the gate G of the transistor 110 on the substrate 101.
需要说明的是,在本公开提供的实施例中,由于工艺条件的限制或测量等其他因素的影响,“大致重合”可能会恰好重合,也可能会有一些偏差(例如具有±2μm的偏差),因此相关特征之间“大致重合”的关系只要满足误差允许,均属于本公开的保护范围。It should be noted that in the embodiments provided in this disclosure, due to limitations of process conditions or the influence of other factors such as measurement, "approximately coincident" may coincide exactly, or there may be some deviation (e.g., a deviation of ±2μm). Therefore, as long as the relationship of "approximately coincident" between related features meets the error allowance, it is within the protection scope of this disclosure.
在一些实施例中,在本公开实施例提供的上述阵列基板中,如图1至图5、图10、图13至图21所示,晶体管110的第一极S可以与数据线103一体设置,晶体管110的第二极D可以通过公共电极106所在层的转接电极113与像素电极102电连接,可选地,转接电极113通过第四过孔V4与像素电极102、以及晶体管110的第二极D电连接,第四过孔V4在与像素电极102的搭接处贯穿第一绝缘层108和第二绝缘层109,第四过孔V4在与晶体管110的第二极D的搭接处贯穿第二绝缘层109。对于阵列基板中其它必不可少的组成部分均为本领域的普通技术人员应该理解具有的,在此不做赘述,也不应作为对本公开的限制。In some embodiments, in the array substrate provided in the present disclosure, as shown in Figures 1 to 5, 10, and 13 to 21, the first electrode S of transistor 110 can be integrally disposed with data line 103, and the second electrode D of transistor 110 can be electrically connected to pixel electrode 102 through transition electrode 113 of the layer where common electrode 106 is located. Optionally, transition electrode 113 is electrically connected to pixel electrode 102 and the second electrode D of transistor 110 through a fourth via V4. The fourth via V4 penetrates the first insulating layer 108 and the second insulating layer 109 at the overlap with pixel electrode 102, and penetrates the second insulating layer 109 at the overlap with the second electrode D of transistor 110. Other essential components in the array substrate are those that should be understood by those skilled in the art and will not be described in detail here, nor should they be construed as limitations on the present disclosure.
基于同一发明构思,本公开实施例提供了一种显示面板,图24和图25分别为本公开实施例提供的显示面板的一种结构示意图。如图24和图25所示,本公开的显示面板包括本公开实施例提供的上述阵列基板001,以及与阵列基板001相对而置的对向基板002,其中,对向基板002包括隔垫物PS,隔垫物PS朝向阵列基板001的端部在衬底基板101上的正投影与基台部PS’在衬底基板101上的正投影相互交叠,可选地,隔垫物PS朝向阵列基板001的端部在衬底基板101上的正投影位于基台部PS’在衬底基板101上的正投影内。需要注意的是,未受挤压时,隔垫物PS作为主隔垫物(Main PS)可以与阵列基板001接触,隔垫物PS作为辅助隔垫物(Sub PS)与阵列基板001之间具有一定的间距;在受到挤压时,隔垫物PS作为主隔垫物(Main PS)被压缩,隔垫物PS作为辅助隔垫物(Sub PS)与阵列基板001接触。另外,由于该显示面板解决问题的原理与上述阵列基板解决问题的原理相似,因此,该显示面板的实施可以参见上述阵列基板的实施例,重复之处不再赘述。可选的,PS也可以设置在阵列基板上,在此不做限定。Based on the same inventive concept, this disclosure provides a display panel. Figures 24 and 25 are schematic diagrams of a structure of the display panel provided in this disclosure. As shown in Figures 24 and 25, the display panel of this disclosure includes the array substrate 001 provided in this disclosure embodiment, and a counter substrate 002 opposite to the array substrate 001. The counter substrate 002 includes spacers PS. The orthographic projection of the end of the spacers PS facing the array substrate 001 on the substrate 101 overlaps with the orthographic projection of the base portion PS' on the substrate 101. Optionally, the orthographic projection of the end of the spacers PS facing the array substrate 001 on the substrate 101 is located within the orthographic projection of the base portion PS' on the substrate 101. It should be noted that when not compressed, the spacer PS, as the main spacer, can contact the array substrate 001, while the spacer PS, as the auxiliary spacer PS, has a certain gap with the array substrate 001. When compressed, the spacer PS, as the main spacer PS, is compressed, and the spacer PS, as the auxiliary spacer PS, contacts the array substrate 001. Furthermore, since the principle by which this display panel solves the problem is similar to that of the array substrate described above, the implementation of this display panel can refer to the embodiment of the array substrate described above, and repeated details will not be elaborated further. Optionally, PS can also be disposed on the array substrate; this is not limited here.
在一些实施例中,在本公开实施例提供的上述显示面板中,如图24和图25所示,还可以在阵列基板001与对向基板002之间设置液晶层003,在阵列基板001远离对向基板002的一侧可以设置有第一偏光片004,在对向基板002远离阵列基板001的一侧可以设置有第二偏光片005,且第一偏光片004的偏振方向与第二偏光片005的偏振方向相互垂直。对于显示面板中其它必不可少的组成部分均为本领域的普通技术人员应该理解具有的,在此不做赘述,也不应作为对本公开的限制。In some embodiments, as shown in Figures 24 and 25, in the display panel provided in the present disclosure, a liquid crystal layer 003 may be disposed between the array substrate 001 and the opposing substrate 002. A first polarizer 004 may be disposed on the side of the array substrate 001 away from the opposing substrate 002, and a second polarizer 005 may be disposed on the side of the opposing substrate 002 away from the array substrate 001. The polarization direction of the first polarizer 004 and the polarization direction of the second polarizer 005 are perpendicular to each other. Other essential components of the display panel are understood by those skilled in the art and will not be described in detail here, nor should they be construed as limiting the present disclosure.
基于同一发明构思,本公开实施例提供了一种显示装置,图26和图27分别为本公开实施例提供的显示装置的一种结构示意图。如图26和图27所示,本公开实施例提供的显示装置可以包括本公开实施例提供的上述显示面板PNL,以及位于显示面板PNL入光侧的背光模组BLU。该背光模组BLU可以为直下式背光模组,也可以为侧入式背光模组。可选地,侧入式背光模组可以包括灯条、层叠设置的反射片、导光板、扩散片、棱镜组等,灯条位于导光板厚度方向的一侧。直下式背光模组可以包括矩阵光源、在矩阵光源出光侧层叠设置的反射片、扩散板和增亮膜等,反射片包括与矩阵光源中各灯珠的位置正对设置的开孔。灯条中的灯珠、矩阵光源中的灯珠可以为发光器件(LED),例如量子点发光器件。Based on the same inventive concept, this disclosure provides a display device. Figures 26 and 27 are schematic diagrams of a structure of the display device provided in this disclosure. As shown in Figures 26 and 27, the display device provided in this disclosure may include the display panel PNL provided in this disclosure, and a backlight module BLU located on the light-incident side of the display panel PNL. The backlight module BLU may be a direct-lit backlight module or an edge-lit backlight module. Optionally, the edge-lit backlight module may include LED strips, stacked reflective sheets, light guide plates, diffusers, prism groups, etc., with the LED strips located on one side of the thickness direction of the light guide plate. The direct-lit backlight module may include a matrix light source, a reflective sheet, a diffuser plate, and a brightness enhancement film stacked on the light-emitting side of the matrix light source, with the reflective sheet including openings directly opposite the positions of the LEDs in the matrix light source. The LEDs in the LED strips and the LEDs in the matrix light source may be light-emitting devices (LEDs), such as quantum dot light-emitting devices.
在一些实施例中,灯珠还可以为微型发光器件(例如Mini LED、Micro LED)等,亚毫米量级甚至微米量级的微型发光器件和有机发光器件(OLED)一样属于自发光器件。其与有机发光器件一样,有着高亮度、超低延迟、超大可视角度等一系列优势。并且由于无机发光器件发光是基于性质更加稳定、电阻更低的金属半导体实现发光,因此它相比基于有机物实现发光的有机发光器件来说,有着功耗更低、更耐高温和低温、使用寿命更长的优势。且在微型发光器件作为背光源时,能够实现更精密的动态背光效果,在有效提高屏幕亮度和对比度的同时,还能解决传统动态背光在屏幕亮暗区域之间造成的眩光现象,优化视觉体验。In some embodiments, the LEDs can also be micro-light-emitting devices (such as Mini LEDs and Micro LEDs). Sub-millimeter or even micrometer-scale micro-light-emitting devices, like organic light-emitting devices (OLEDs), are self-emissive devices. Like OLEDs, they offer advantages such as high brightness, ultra-low latency, and ultra-wide viewing angles. Furthermore, because inorganic light-emitting devices emit light based on more stable and lower-resistance metal semiconductors, they offer advantages over organic light-emitting devices (OLEDs) in that they have lower power consumption, better resistance to high and low temperatures, and longer lifespan. When micro-light-emitting devices are used as backlights, they can achieve more precise dynamic backlighting effects, effectively improving screen brightness and contrast while also solving the glare problem caused by traditional dynamic backlighting between bright and dark areas of the screen, thus optimizing the visual experience.
在一些实施例中,本公开实施例提供的上述显示装置可以为:电视机、显示器、投影仪、3D打印机、虚拟现实设备、手机、平板电脑、笔记本电脑、数码相框、导航仪、智能手表、健身腕带、个人数字助理等任何具有显示功能的产品或部件。可选地,本公开提供的显示装置包括但不限于:射频单元、网络模块、音频输出&输入单元、传感器、显示单元、用户输入单元、接口单元以及控制芯片等部件。可选地,控制芯片为中央处理器、数字信号处理器、系统芯片(SoC)等。例如,控制芯片还可以包括存储器,还可以包括电源模块等,且通过另外设置的导线、信号线等实现供电以及信号输入输出功能。例如,控制芯片还可以包括硬件电路以及计算机可执行代码等。硬件电路可以包括常规的超大规模集成(VLSI)电路或者门阵列以及诸如逻辑芯片、晶体管之类的现有半导体或者其它分立的元件;硬件电路还可以包括现场可编程门阵列、可编程阵列逻辑、可编程逻辑设备等。另外,上述结构并不构成对本公开实施例提供的上述显示装置的限定,换言之,在本公开实施例提供的上述显示装置中可以包括上述更多或更少的部件,或者组合某些部件,或者不同的部件布置。In some embodiments, the display device provided in this disclosure can be any product or component with display function, such as a television, monitor, projector, 3D printer, virtual reality device, mobile phone, tablet computer, laptop computer, digital photo frame, navigator, smartwatch, fitness wristband, or personal digital assistant. Optionally, the display device provided in this disclosure includes, but is not limited to, components such as a radio frequency unit, network module, audio output & input unit, sensor, display unit, user input unit, interface unit, and control chip. Optionally, the control chip is a central processing unit, digital signal processor, system-on-a-chip (SoC), etc. For example, the control chip may also include memory, a power module, etc., and achieve power supply and signal input/output functions through additionally provided wires, signal lines, etc. For example, the control chip may also include hardware circuits and computer-executable code. The hardware circuit may include conventional very-large-scale integrated circuits (VLSI) or gate arrays, as well as existing semiconductors or other discrete components such as logic chips and transistors; the hardware circuit may also include field-programmable gate arrays, programmable array logic, programmable logic devices, etc. Furthermore, the above structure does not constitute a limitation on the display device provided in the embodiments of this disclosure. In other words, the display device provided in the embodiments of this disclosure may include more or fewer of the above components, or combine certain components, or arrange different components.
尽管已描述了本公开的优选实施例,但本领域内的技术人员一旦得知了基本创造性概念,则可对这些实施例作出另外的变更和修改。所以,所附权利要求意欲解释为包括优选实施例以及落入本公开范围的所有变更和修改。Although preferred embodiments of this disclosure have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of this disclosure.
显然,本领域的技术人员可以对本公开实施例进行各种改动和变型而不脱离本公开实施例的精神和范围。这样,倘若本公开实施例的这些修改和变型属于本公开权利要求及其等同技术的范围之内,则本公开也意图包含这些改动和变型在内。Obviously, those skilled in the art can make various modifications and variations to the embodiments of this disclosure without departing from the spirit and scope of the embodiments of this disclosure. Therefore, if these modifications and variations to the embodiments of this disclosure fall within the scope of the claims of this disclosure and their equivalents, this disclosure is also intended to include these modifications and variations.
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