WO2025237509A1

WO2025237509A1 - Substrate treatment apparatus allowing for an alternative cleaning, method of cleaning and use of the apparatus

Info

Publication number: WO2025237509A1
Application number: PCT/EP2024/063164
Authority: WO
Inventors: Simon Kaiser; Björn HERMANN; Michel MARTI; Jörg PATSCHEIDER; Dominik Hartmann
Original assignee: Evatec AG
Current assignee: Evatec AG
Priority date: 2024-05-14
Filing date: 2024-05-14
Publication date: 2025-11-20
Anticipated expiration: 2026-11-14
Also published as: WO2025238118A1; WO2025238117A1

Abstract

The invention relates to the technical field of substrate surface treatment by plasma etching and/or atomic layer deposition. A substrate processing apparatus (1) comprising at least one magnet arrangement recipient (13) adapted to receive a magnet arrangement (9) is provided. When the magnet arrangement (9) is received by the magnet arrangement recipient (13), no electron cyclotron resonance (ECR) is provided inside the apparatus (1). Furthermore, a substrate processing apparatus (1) comprising at least one microwave transmissive material window (16) having an electrically conductive frame (17) and one or multiple electrically conductive wires (18) is provided to attract cleaning gas ions. Moreover, a method of in-situ cleaning of a substrate processing apparatus (1) and a use of the apparatus (1) and of the method are provided.

Description

SUBSTRATE TREATMENT APPARATUS ALLOWING FOR AN ALTERNATIVE CLEANING, METHOD OF CLEANING AND USE OF THE APPARATUS

Technical field of invention

The present invention relates to the technical field of surface treatment , in particular substrate surface treatment by plasma etching or atomic layer depos ition, further in particular by plasma-enhanced atomic layer deposition . Moreover, the present invention relates to a substrate treatment apparatus comprising at least one magnet arrangement recipient adapted to receive a magnet arrangement of the substrate treatment apparatus , a substrate treatment apparatus comprising at least one microwave transmissive material window having an electrically conductive frame and multiple electrically conductive wires connected to the frame , as well as to the microwave transmissive material window itsel f . Furthermore , the present invention relates to a method of cleaning the apparatuses , as well as a use of the apparatuses in a substrate treatment process .

Thermal atomic layer deposition ( thermal ALD) is a technology which allows a conformal deposition of thin solid films on any part of a flat or non- flat surface . An exemplary and more speci fic form of ALD is the plasma- enhanced atomic layer deposition ( PEALD) which expands the possibilities of ALD by applying a plasma state during the reactive hal f-step of a PEALD cycle , thereby increasing the reactivity with respect to a thermal ALD process . In this way, PEALD enables using lower process temperatures , thus providing advantages for processing more temperature sensitive substrates .

PEALD systems to deposit thin films have been on the market since the 90ies . These are predominantly remote plasma setups but can also employ capacitively and inductively coupled RE plasmas , and microwave plasmas .

A big problem found in substrate treatment apparatuses , in particular PEALD systems , is related to the cleaning of the chamber , in which the treatment was performed . The cleaning step is of essential relevance , since even small material residues on the inner walls of the housing may contaminate the processed material , for example the deposited material during the deposition process . The state-of-the-art cleaning methods comprise a step of opening of the deposition chamber and mechanically cleaning its inside . However, this approach is very time-consuming and brings a financial disadvantage , as during the time of cleaning no new films can be produced . Moreover, continuous opening of the treatment chamber to the atmospheric air allows humidity and oxygen to enter, which is why an extensive bakeout and evacuation is required after every cleaning step .

The obj ective of the present invention is to provide a substrate treatment apparatus that allows for an alternative cleaning, in particular an easier cleaning . An alternative obj ective of the invention is the provision of a method that allows for an alternative , in particular easier cleaning . An alternative obj ective of the invention is the provision of a use of the substrate treatment apparatus that allows for an alternative , in particular easier cleaning .

An even further alternative obj ective of the invention is the provision of a substrate processing apparatus , a method of cleaning, and/or a use which at least partially overcome the named disadvantages of the prior art .

At least one of these obj ectives is achieved by an apparatus according to claim 1 or claim 8 .

At least one of these obj ectives is also achieved by a method according to claim 28 .

At least one of these obj ectives is also achieved by a use according to claim 38 .

One aspect of the invention, on its own or in the context of the still to be addressed, addresses an apparatus .

In one embodiment of the apparatus according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the apparatus comprises :

• a vacuum recipient defined by a housing with an inner surface , the vacuum recipient having an inside ;

• at least one controllable pumping port adapted to evacuate the vacuum recipient ;

• at least one controllable gas inlet to the inside of the vacuum recipient ;

• at least one controllable power source , in particular a UHF power source , adapted to generate an electric field at least inside the vacuum recipient ; • a magnet arrangement movable between a first position and a second position and generating in the first position a magnetic field at least inside the vacuum recipient , the magnet arrangement comprising one or more permanent magnet elements ;

• a chuck arranged inside the vacuum recipient and adapted to hold a substrate ; and optionally

• a control unit , and wherein the magnet arrangement in the first position forms an Electron Cyclotron Resonance (ECR) arrangement adapted to provide electron cyclotron resonance , characteri zed in that the substrate treatment apparatus further comprises

• at least one magnet arrangement recipient adapted to receive the magnet arrangement in its second position, wherein the magnet arrangement in the second position does not form an Electron Cyclotron Resonance (ECR) arrangement adapted to provide electron cyclotron resonance .

The apparatus comprises a vacuum recipient defined by a housing and having an inside . It further comprises a controllable pumping port which is adapted to evacuate the inside of the vacuum recipient and a controllable gas inlet leading to the inside of the vacuum recipient . The apparatus also comprises at least one controllable power source , e . g . 2 , 3 , 4 , 5 or more power sources which are functionally coupled to the inside of the vacuum recipient and are adapted to generate an electric field at least inside the vacuum recipient. In one variant, at least two controllable power sources are functionally coupled to the inside of the vacuum recipient, e.g. one being a UHF power source suitable for providing microwaves to the inside of the vacuum recipient. The other power source is in one variant a voltage source adapted to generate an electric field at least inside the vacuum recipient, e.g. by being connected to a cathode and an anode positioned inside the vacuum recipient or its housing. Optionally, for all embodiments disclosed herein, an interrupter switch is arranged between the at least one power source, e.g. a voltage source, and the inside of the vacuum recipient, in particular between the at least one power source and at least one electrode positioned inside the vacuum recipient or its housing. For example, the switch is "off" for ECR plasma deposition (first mode) and "on" for plasma cleaning/etching (second mode) . Exemplary switch conditions include: "off" for deposition in floating conditions, and/or forming a connection to the ground GND for grounded deposition .

Under the term "controllable pumping port" we understand e.g. a pumping port which can be switched on and/or off in a controlled manner, or the pumping capacity of which can be adjusted in a controlled manner, mechanically, electronically, manually, and/or by a control unit such as for example a computer with a suitable software. Under the term " controllable gas inlet" we understand e . g . a gas inlet which can be closed and/or opened in a controlled manner, or the flow rate through which can be adj usted in a controlled manner, mechanically, electronically, manually, and/or by a control unit such as for example a computer with a suitable software .

Under the term " controllable power source" we understand a power source such as for example a voltage power source or a UHF power source which can be switched and/or o ff in a controlled manner, or the output power of which can be adj usted in a controlled manner, mechanically, electronically, manually, and/or by a control unit such as for example a computer with a suitable software . In particular, a controllable power source such as a UHF power source is configured to provide microwaves to the inside of the vacuum recipient , wherein the wavelength and/or radiation intensity of the microwaves are adj ustable . A controllable power source such as a DC voltage power source is configured to provide an electric field inside the vacuum recipient , wherein the strength of the electric field, its presence and/or absence can be controlled or adj usted mechanically, electronically, manually, and/or by a control unit .

The apparatus further comprises a magnet arrangement which can be moved between at least two positions , in particular a first and a second position . By moving the magnet arrangement in the first position, a magnetic field is generated and present at least inside the vacuum recipient . The apparatus further comprises a chuck which is arranged inside the vacuum recipient, an optional control unit and at least one magnet arrangement recipient which is suitable for receiving the magnet arrangement in the second position of the magnet recipient.

The magnet arrangement which is part of the substrate treatment apparatus comprises one or more permanent magnet elements, e.g., 2, 3, 4, 5, 10, 100, 1000, or 1.000.000 permanent magnet elements. In the context of the present invention, a permanent magnet element defines an element having the physical property of generating a constant magnetic field without the need of providing electrical energy. For example, the element can be a permanent magnet itself, or it can contain permanent magnetic areas.

The substrate treatment apparatus further comprises a chuck adapted or configured to hold a substrate with a surface to be treated. In one of the possible variants, the chuck is formed as a pedestal on which the substrate can be placed. In an alternative apparatus, the chuck is arranged below the permanent magnet element or the permanent magnet elements of the magnet arrangement. Depending on the specific needs and requirements to be met, the chuck can be arranged inside the vacuum recipient in a movable or nonmovable manner, the chuck being for example movable in and/or out of the vacuum recipient and/or being movable within the inside of the vacuum recipient. In another variant, the chuck is completely electrically insulated from the housing of the vacuum recipient and has a top and/or a surface that is electrically conductive with an electrical conductivity of at least 1 mS/cm. The substrate treatment apparatus comprises an optional control unit . The latter is configured to control the parts of the substrate treatment apparatus , for example during the surface treatment process of the substrate , or generally during the operation and/or maintenance of the apparatus .

The magnet arrangement in the first position forms an ECR arrangement adapted or configured to provide electron cyclotron resonance , in particular inside the vacuum recipient . In one exemplary embodiment , this ef fect is achieved with the magnet arrangement being arranged outside the vacuum recipient in its first position, for example inside a cavity formed by the housing or inside the housing of the vacuum recipient .

The substrate treatment apparatus further comprises at least one magnet arrangement recipient adapted and/or configured to receive the magnet arrangement in its second position, wherein no electron cyclotron resonance is provided inside the vacuum recipient . In one exemplary embodiment , only the permanent magnet element or the permanent magnet elements are received by the magnet arrangement recipient when the magnet arrangement is in the second position . However, also some further elements or all elements belonging to the magnet arrangement , such as for example the wiring, elements for positioning the permanent magnet element or elements and/or at least one sensor can be received by the magnet arrangement recipient when the magnet arrangement is in the second position . In another embodiment of the apparatus according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the magnet arrangement in the second position does not generate a magnetic field inside the vacuum recipient suf ficient to maintain a magnetron discharge .

According to this embodiment , no magnetic field suf ficient to maintain a magnetron discharge is generated inside the vacuum recipient . In one example , the at least one permanent magnet element still generates a magnetic field, which however does not reach the inside of the vacuum element , in particular in a way that the Electron Cyclotron Resonance (ECR) arrangement adapted to provide electron cyclotron resonance is not formed, further in particular when the magnet element ( e . g . forming a semi-torus ) is arranged in the second position, for example outside the vacuum recipient .

In one variant , the magnetic field is considered too week inside the vacuum recipient i f its strength value is less than 875 G at 2 . 45 GHz . In particular, ECR conditions are met at the 875 G isosurface of the magnet element semitorus . The strength of the magnetic field outside the vacuum recipient can be of any value .

In another embodiment of the apparatus according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the magnet arrangement recipient is configured to shield at least the magnetic field lines of the magnet arrangement in its second position, of which the magnetic field lines would otherwise generate a magnetic field inside the vacuum recipient suf ficient to maintain a magnetron discharge .

In one variant , the magnet arrangement recipient forms a barrier which shields the magnetic field lines and prevents them from reaching the inside of the vacuum recipient . Herein, the distance by which the magnet arrangement has to be moved between the first and the second position can be shorter in comparison to an embodiment , in which the magnet arrangement recipient is not configured to shield the magnetic field lines . For example , the magnet arrangement recipient encompasses the magnet arrangement , in particular the one or more permanent magnet elements , at least in one direction perpendicular to the magnetic field lines generated by the magnet arrangement . In an exemplary variant , a plate to shield the magnetic fields lines is placed between the magnet arrangement or the one or more permanent magnet elements and the inside of the vacuum recipient .

In another variant , the magnet arrangement recipient encompasses at least the circumference of the permanent magnet element or of the permanent magnet elements when the magnet arrangement is in the second position . This variant can for example be reali zed by a cavity formed by the housing of the vacuum recipient , which cavity can be open or closed with respect to the inside of the vacuum recipient , or by a recess formed inside the housing of the vacuum recipient .

In another embodiment of the apparatus according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the magnet arrangement recipient comprises or consists of a ferromagnetic material . In one variant , the ferromagnetic material is in particular iron ( Fe ) or a ferromagnetic steel . In another variant , the magnet arrangement recipient comprises or consists of a soft-magnetic material with a low remanence magneti zation .

Suitable ferromagnetic materials are known to those skilled in the art and are for example selected from a group consisting of iron ( Fe ) , cobalt (Co ) , nickel (Ni ) , rare- earth metals , and their alloys .

In another embodiment of the apparatus according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the apparatus is configured to be operable in a first mode and in a second mode , wherein : in the first mode the at least one controllable power source , in particular UHF power source , is switched on and the magnet arrangement is in its first position; in the second mode the at least one controllable power source provides a continuous or pulsed DC voltage between a first electrode and a second electrode , wherein the first electrode is arranged inside the vacuum recipient or is the housing of the vacuum recipient , wherein the second electrode is arranged inside the vacuum recipient or is the housing of the vacuum recipient , wherein the inside of the vacuum recipient contains a cleaning gas , and the magnet arrangement is in its second position, and wherein optionally the control unit is configured to control the switch between the first mode and the second mode .

According to this embodiment , the apparatus is configured to be manually and/or automatically operable in the first and in the second mode . Herein, the apparatus is configured such that the first mode and the second mode cannot be conducted simultaneously, but they can be conducted one after the other . For example , a plasma-assisted atomic layer deposition ( PEALD) process can be conducted when the apparatus is operated in the first mode . Operating the apparatus in the second mode allows for example a cleaning of the inside of the vacuum recipient or a plasma etching of a substrate . Herein, the continuous or pulsed DC voltage between the first and the second electrode can generate an electrical field by which the cleaning gas is ioni zed to form a plasma . In the second mode , the magnet arrangement is in the second position and no electron cyclotron resonance is provided inside the vacuum recipient . In one variant , the switching between the two modes comprises li fting the one or more magnet elements by a li fting mechanism to create a distance between the inside of the vacuum recipient and the surface of the one or more magnet elements of the magnet arrangement , such as e . g .

1 cm to 100 cm, in particular 6 cm and/or more than 6 cm . In one variant , the switching is done by using a motor and a moving mechanism, e . g . a spindle drive . However, also any other mechanisms are conceivable , e . g . a manual removal of the magnet element or elements to a suf ficiently large distance to not ignite a magnetron discharge inside the vacuum recipient .

The second mode is performed after the switching on the at least one controllable power source and after and/or during a cleaning gas was introduced into the vacuum recipient .

The control unit is an optional feature in some of the alternative apparatuses and can be embodied for example by a computer configured to switching between the two modes .

A further aspect of the invention, on its own or in the context of the preaddressed or still to be addressed, addresses a microwave transmissive material window comprising an electrically conductive frame and one or multiple electrically conductive wires connected to the frame and contacting the surface of the microwave transmissive material window or arranged with a distance to the surface of the microwave transmissive material window . The microwave transmissive material window can be of any shape , such as for example circular, rectangular, squared, trapezoid, etc . and comprises a microwave transmissive material, in particular in the form of a pane, which is framed by the electrically conductive frame. At least one, in particular more than one, e.g. 2, 3, 4, 5, 6, 7, 8, 9, 10, 15, 20, 25, 30, 35, 40, 45, 50, 100, or 250 electrically conductive wires are connected to the frame in a way that they at least partially, in particular fully extend over the surface of the window. In particular, the wires extend parallel to each other and/or to the borders of the window either contacting the surface of the microwave transmissive material and/or they are arranged with a distance to said surface, the distance being for example in a range of 0.005 mm to 10 mm. In one variant, the wires are evenly distributed across the surface of the window. In another variant, the distance between the frame and its closest wire is bigger than the distance between the wires. This variant allows for example for an easier adjustment of the window in case there are steric hinderances at the borders of the window, in particular at the window frame.

In another embodiment of the apparatus according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the apparatus further comprises at least one microwave transmissive material window sealing the inside of the vacuum recipient with respect to the at least one controllable power source, the at least one controllable power source being in particular a UHF power source, wherein the microwave transmissive material window comprises an electrically conductive frame and multiple electrically conductive wires connected to the frame and contacting the surface of the microwave transmissive material window or arranged with a distance to the surface of the microwave transmissive material window .

In the embodiment the at least one microwave transmissive material window seals the inside of the vacuum recipient with respect to the said at least one controllable power source in a vacuum-tight manner . In particular, the electrically conductive wire or wires are at the same ground potential as the rest of the vacuum recipient ' s inner housing walls . The material window is considered microwave transmissive i f at least a part of the electromagnetic waves with wavelengths in the microwave frequency range of 300 MHz to 300 GHz of the electromagnetic spectrum ( corresponding to a wavelength of Im- 1mm) can pass through the material window, the wire ' s thickness and distance depending on the frequency used . In one variant , wavelengths in the microwave frequency range of 1 GHz to 300 GHz , in particular 0 . 9 GHz to 25 GHz can pass through the material window . To be defined as microwave transmissive , the material window does not have to transmit 100% of the incoming microwave radiation intensity . Also , a material window transmitting less than 75% of the incoming microwave radiation intensity, e . g . , 50% of the incoming microwave radiation intensity is considered as microwave transmissive . In some variants , the microwave transmissive window is suitable for transmitting the incoming radiation power at percentages summari zed in

Table 1 .

Table 1 :

The microwave transmissive material window comprises an electrically conductive frame and a multitude of electrically conductive wires , which are in particular oriented parallel to each other . In some examples , the microwave transmissive material window comprises any UHF- transmissive material , e . g . glass , AI2O3, quartz , or a polymer framed by the electrically conductive frame .

A further aspect of the invention, on its own or in the context of the preaddressed or still to be addressed, addresses an apparatus .

In one embodiment of the apparatus according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the substrate treatment apparatus comprises : • a vacuum recipient defined by a housing with an inner surface , the vacuum recipient having an inside ;

• at least one controllable gas inlet to the inside of the vacuum recipient ;

• at least one controllable power source , in particular a UHF power source adapted to generate an electric field at least inside the vacuum recipient ;

• a magnet arrangement generating a magnetic field at least inside the vacuum recipient , the magnet arrangement comprising one or more permanent magnet elements ;

• a control unit , and wherein the magnet arrangement forms an Electron Cyclotron Resonance (ECR) arrangement adapted to provide electron cyclotron resonance , characteri zed in that the substrate treatment apparatus further comprises

• at least one microwave transmissive material window sealing the inside of the vacuum recipient with respect to the at least one controllable power source , wherein the microwave transmissive material window comprises an electrically conductive frame and one or multiple electrically conductive wires connected to the frame and contacting the surface of the microwave transmissive material window or arranged with a distance to the surface of the microwave transmissive material window .

The above-described substrate treatment apparatus addresses an alternative to the previously described substrate treatment apparatus and its embodiments , but its technical features can nonetheless be combined with the previously described substrate treatment apparatus and its embodiments .

The apparatus comprises a vacuum recipient defined by a housing and having an inside . It further comprises a controllable pumping port which is adapted to evacuate the inside of the vacuum recipient and a controllable gas inlet leading to the inside of the vacuum recipient . The apparatus also comprises at least one controllable power source , e . g . 2 , 3 , 4 , 5 or more power sources which are adapted to generate an electric field at least inside the vacuum recipient .

In one variant , at least two controllable power sources are functionally coupled to the inside of the vacuum recipient , e . g . one being a UHF power source suitable for providing microwaves to the inside of the vacuum recipient . The other power source is in one variant a voltage source adapted to generate an electric field at least inside the vacuum recipient , e . g . by being connected to a cathode and an anode positioned inside the vacuum recipient or its housing . Optionally, for all embodiments disclosed herein, an interrupter switch is arranged between the at least one power source , e . g . a voltage source , and the inside of the vacuum recipient , in particular between the at least one power source and at least one electrode positioned inside the vacuum recipient or its housing . For example , the switch is "of f" for ECR plasma deposition ( first mode ) and "on" for plasma cleaning/etching ( second mode ) . Exemplary switch conditions include : "of f" for deposition in floating conditions , and/or forming a connection to the ground GND for grounded deposition .

The apparatus further comprises a magnet arrangement generating a magnetic field at least inside the vacuum recipient , which comprises one or more permanent magnet elements . Moreover, inside the vacuum recipient , the apparatus comprises a chuck and outside the vacuum recipient , an optional control unit . The magnet arrangement forms an Electron Cyclotron Resonance (ECR) arrangement which is suitable for providing electron cyclotron resonance inside the vacuum recipient . The apparatus further comprises at least one microwave transmissive material window which vacuum tightly seals the inside of vacuum recipient , in particular from an outside being the standard atmosphere with a standard atmospheric pressure or from an outside having a pressure higher than the vacuum inside the vacuum recipient but lower than the standard atmospheric pressure .

In particular, the microwave transmissive material window is at the same potential as the inner surface of the vacuum recipient ' s housing or floating . In another embodiment of the apparatus according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the one or more permanent magnet elements have the shape of a torus or of a semi-torus .

The inventors have found that the shape of the permanent magnet element or elements , in particular the shape of the total of the permanent magnet element or elements , has an influence on the electron cyclotron resonance (ECR) to be provided . Magnet arrangements having one or more , in particular all permanent magnet elements , further in particular the magnetic isosurface of all permanent magnetic elements , forming the shape of a torus or of a semi-torus result in an ECR with a homogenous , dense and uni form plasma distribution .

Herein, a torus defines a shape of a three-dimensional ring or a donut with or without a slight distortion . In one variant , the torus or the semi-torus is arranged in a way that its equatorial plane lies essentially parallel to the plane defined by the surface of the chuck and/or to the surface of a substrate when a substrate is positioned on the chuck . The semi-torus defines a shape of essentially a hal f of the above-described torus , of course some slight deviations are possible . A semi-torus shape is obtained from the torus by an imaginary, essentially perpendicular cut of the torus with respect to its equatorial plane . In another embodiment of the apparatus according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the at least one controllable pumping port is a pumping chamber being optionally arranged adjacent, particularly connected to the housing of the vacuum recipient.

In one of the variants, the at least one controllable pumping port has the form of a pumping chamber. If the apparatus comprises more than one pumping port, only some, e.g. one pumping port, two or three pumping ports can be a pumping chamber and the other pumping ports can have a different design.

In some alternatives, the pumping chamber has a housing, which is arranged adjacent to, optionally connected to the housing of the vacuum recipient, e.g. a process chamber.

In some variants, the pumping chamber has a partial housing, meaning that in these cases the housing does not surround the total volume of the pumping chamber and has e.g. one opening or more than one opening. Herein, the pumping chamber is arranged adjacent to, optionally connected to the housing of the vacuum recipient in such a way that the pumping chamber and the vacuum recipient form a vacuum-tight arrangement.

In an alternative apparatus, the pumping chamber is adapted and/or configured to receive the chuck assembly or the chuck, in particular by moving the chuck assembly or the chuck from the inside of the vacuum recipient to the inside of the pumping chamber and vice versa. Therefore, in some of the variants , there is a passage between the vacuum recipient and the pumping chamber, through which passage the chuck can be moved from the pumping chamber to the vacuum recipient and from the vacuum recipient to the pumping chamber . Such passage can for example have the form of a closable opening .

In another embodiment of the apparatus according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the apparatus further comprises a separating valve , which separating valve separates the pumping chamber from the vacuum recipient , wherein the separating valve is in particular a ring valve .

The separating valve , in particular ring valve , separates the pumping chamber from the vacuum recipient by being arranged within the above-described passage between the vacuum recipient and the pumping chamber or by being arranged outside this passage , e . g . next to the passage and between the vacuum recipient and the pumping chamber .

Moreover, in some variants the separating valve can be placed in a tube fluidly connecting the vacuum recipient and the pumping chamber .

In another embodiment of the apparatus according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the chuck arrangement , in particular the chuck, is movably arranged between the inside of the vacuum recipient and the pumping chamber .

The above-named embodiment allows a fast and easy substrate processing . Herein, the chuck is arranged in a manner which allows its mobility between the inside of the vacuum recipient and the pumping chamber . Hence , the substrate can for example be positioned on the chuck or on a substrate carrier arranged on the chuck and can therefore be moved between the pumping chamber and the vacuum recipient . This feature allows a convenient transition of the substrate between the pumping conditions and the vacuum recipient such as a process chamber in which the treatment takes place .

In another embodiment of the apparatus according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the apparatus further comprises a multiple-way tap connected to the at least one controllable gas inlet .

The multiple-way tap can for example be a two-way tap, a three-way tap, or any other suitable multiple-way tap . Connecting the latter to the at least one controllable gas inlet ( e . g . as an integral part of the gas inlet , via a connector or an adapter ) allows the handling of multiple di f ferent gas species using e . g . only one controllable gas inlet . Such gas species can for example be a plasma gas , a precursor gas , a purging gas , or a co-reactant gas .

In another embodiment of the apparatus according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the apparatus comprises at least one further controllable gas inlet to the inside of the vacuum recipient , wherein at least one controllable gas inlet is a controllable reactive gas inlet .

The embodiment provides an alternative to the use of a multiple-way tap by introducing at least one further controllable gas inlet to the inside of the vacuum recipient . In this embodiment , the additional controllable gas inlet to the inside of the vacuum recipient is configured as an inlet for any reactive gas to be used in the substrate treatment process . In particular, the controllable reactive gas inlet can comprise or comprises means for its protection from being damaged or destroyed by the reactive gas , for example by corrosion, etching, formation of a solid, etc . In a more speci fic variant, the controllable reactive gas inlet comprises a coating which protects it against any damage arising from the reactive gas .

In another embodiment of the apparatus according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the apparatus comprises at least two further controllable gas inlets to the inside of the vacuum recipient , wherein at least one controllable gas inlet is a controllable reactive gas inlet , at least one controllable gas inlet is a controllable process gas inlet and at least one controllable gas inlet is a cleaning gas inlet .

To make the inlet of the di f ferent gases even easier and prevent a mixing of the gases among each other, the apparatus may comprise at least three controllable gas inlets which can be used for three di f ferent types of gases .

In another embodiment of the apparatus according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the apparatus comprises a waveguide arrangement , which waveguide arrangement comprises at least one microwave waveguide arranged at a coupling area to the inside of the vacuum recipient .

In some variants , the at least one microwave waveguide has the form of a hollow conductive metal pipe and is adapted and/or configured to carry high frequency radio waves , particularly microwaves . For example , a conductive waveguide separated from the vacuum recipient by a dielectric window can be used .

The at least one microwave , for example 1 , 2 , 3 , 4 , 5 , or 6- 10 waveguides are arranged at the coupling area to the inside of the vacuum recipient . Herein, such coupling area extends outside the vacuum recipient , and the waveguide arrangement is hence arranged outside the vacuum recipient to the inside of which the wave should be coupled .

In another embodiment of the apparatus according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the first mode is a deposition mode , and the second mode is an in-situ cleaning mode .

The deposition mode describes herein a mode during which at least some few atoms of a desired material , e . g . of a semiconductor, an insulator, or a conductor can be deposited on the surface of the substrate to be treated, in particular as a thin film . In particular, at least a part of the atoms to be deposited derive from the reactive gas , such as for example AlMea, in order to form a continuous or discontinuous film comprising a single- or multiatomic layer deposited on the surface of the substrate , in this example AI2O3. The deposited atoms may for example form a continuous or discontinuous film of AIN, GaN, GaAs , SiN, or SIGN .

The second mode , which can be conducted before and/or after the first mode ( deposition mode ) describes a mode during which at least some of the elements of the apparatus , in particular the inner surface of the housing of the vacuum recipient , optionally the inner surface of the microwave transmissive material window and/or the chuck are cleaned, in particular plasma cleaned in-situ, i . e . without the need to expose the apparatus to the atmospheric air . Herein, the microwave transmissive material window in particular can attract ions formed from the cleaning gas and hence allows for cleaning the microwave transmissive window .

In another embodiment of the apparatus according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the microwave transmissive material of the microwave transmissive material window comprises or is made of any microwave transmissive material , in particular glass , quartz , or a polymer .

The microwave transmissive material described herein, refers to a material at least partially transmissive to microwave radiation, e . g . wherein more than 50% , in particular more than 75% and further in particular more than 90% of the microwave radiation power are transmitted through the microwave transmissive material . The latter can be made of glass , quartz ( SiCt ) , a polymer ( for example any microwave transmissive solid polymer ) , aluminum oxide (AI 2 O3 ) , or a combination or composite material thereof .

In another embodiment of the apparatus according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the multiple electrically conductive wires are arranged on the surface of the microwave transmissive material window inside the vacuum recipient and/or on the surface of the microwave transmissive material window outside the vacuum recipient.

The inventors have found that both a window having the wires arranged inside and outside the vacuum recipient (when the window is part of the substrate treatment apparatus) are usable, particularly in a cleaning mode.

In the embodiment, the wires are arranged on the surface of the microwave transmissive material window inside and/or outside the vacuum recipient, meaning that they are at least partially, or fully contacting said surface or surfaces .

In another embodiment of the apparatus according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the microwave transparency of the microwave transmissive material window is 90% and/or more than 90%.

Herein, at least 90% and/or more than 90%, e.g. 90%-92%, 90%-94%, 90%-96%, 90%-98%, or 90%-100% of the initially generated microwave power can reach the inside of the vacuum recipient. Therefore, the microwave transparency of the microwave transmissive material window equals 90% and/or more than 90%, e.g. 90%-92%, 90%-94%, 90%-96%, 90%- 98%, or 90%-100%.

The term "microwave transparency of the microwave transmissive material window" refers herein to the microwave transparency of the window element comprising the electrically conductive frame and at least one wire: it does not refer to the microwave transmissive material itself (i.e. it does not refer to the microwave transmittance of e.g. glass, quartz, or the polymer alone) .

In another embodiment of the apparatus according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the microwave transmissive material window has a total size in the range of 100 mm to 200 mm times 50 mm to 100 mm, in particular 145.3 mm times 61.3 mm, the size of the surface not covered by the frame is in the range of 99 mm to 199 mm times 49 mm to 99 mm, in particular 130 mm times 46 mm, and wherein the microwave transmissive material window comprises 15 0.5 mm thick wires with a distance of 2.5 mm between each wire.

In particular, the microwave transmissive material window can have a rectangular or squared shape, some variants of the microwave transmissive material window having a total size as summarized below in Table 2.

Table 2 : In particular, the surface of the microwave transmissive material window not covered by the frame can have a rectangular or squared shape, some variants of the microwave transmissive material window having a surface not covered by the frame having a size as summarized below in Table 3.

Table 3 :

As noted above, the microwave transmissive window can comprise in some variants at least one, in particular more than one, e.g. 2, 3, 4, 5, 6, 7, 8, 9, 10, 15, 20, 25, 30, 35, 40, 45, 50, 100, or 250 electrically conductive wires which are connected to the frame in a way that they at least partially, in particular fully extend over the surface of the window. Herein, the window surface which is covered by the wires can be in a range of 0.5% to 75% of the window surface, in particular 1% to 33%, further in particular 2% to 25% or 2% to 10%. For further examples of surface values covered by the wires, see Table 4, first line. In case that the microwave transmissive window comprises more than one wire, the distance between the wires can be in the range of 100 mm to 0.1 mm, in particular 75 mm to 0.2 mm and further in particular 10 mm to 0.2 mm. Some further distances are listed in Table 4, second line. Table 4 :

In another embodiment of the apparatus according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the electrically conductive frame and at least one, in particular all of the electrically conductive wires are metallic.

The frame and at least one, optionally all wires being part of the microwave transmissive material window must be electrically conductive in order to provide an arrangement, in which a voltage (i.e. potential difference) between the chuck and the window can be formed when these two elements act as differently charged electrodes. In a more specific example, the frame and at least one of the wires are metallic, meaning that they consist of one or more metals, or a metal alloy. Suitable metallic examples are known to those skilled in the art, to name only some few, e.g. Fe, Cu, Al, Ni, brass, Zn, Ag, bronze, sterling silver, Pt or Au.

In another embodiment of the apparatus according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the electrically conductive frame and at least one , in particular all of the electrically conductive wires comprise a Ni-coating .

The inventors have found that a Ni-coating applied on the frame and/or the wires protects them from damaging . For example , i f a pulsed DC voltage is applied between the chuck and the microwave transmissive material window and the vacuum recipient contains a cleaning gas , cleaning gas ions , in particular cations , can be accelerated either towards the chuck or towards the window . Hence , the frame and/or the wire material is exposed to the aggressive etching ef fect i f the wires are arranged inside the vacuum recipient . The inventors have recogni zed that a frame and a wire or wires comprising a Ni-coating are protected from such damaging, have a longer li fetime and last longer .

In another embodiment of the apparatus according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the electrically conductive wires are arranged in a plane parallel to a plane of a cross-sectional area of the microwave waveguide and are arranged parallel to at least one larger side of the cross-sectional area of the microwave waveguide , in particular parallel to the larger side of the cross- sectional area of the microwave waveguide in a rectangular shape . The at least one microwave waveguide has a cross-sectional area, for example in the form of a rectangle , triangle , trapezoid, square , triangle , or a polygon . This cross- sectional area has at least one larger ( longer ) side, parallel to which the electrically conductive wires are arranged, in the case of an oval or round cross-sectional area the circumference being the larger side . In one variant , the wires are arranged parallel to the long side of the cross-sectional area of a rectangular waveguide . Moreover, the cross-sectional area defines a plane . Herein, the electrically conductive wires are arranged in a plane , which is parallel to the plane of the before-mentioned cross-sectional area .

The wires are arranged perpendicular to the propagation direction of the wave , when the waveguide arrangement , in particular the waveguide , is in operation .

The features allow to minimi ze the obstruction of the microwave ' s propagation from the microwave waveguide into the inside o f the vacuum recipient .

In another embodiment of the apparatus according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the apparatus is a plasma enhanced atomic layer deposition ( PEALD) apparatus .

In this embodiment of the invention, the substrate treatment apparatus is configured to perform a plasma- enhanced atomic layer deposition ( PEALD) of at least one material onto the substrate to be treated . Hence , in this case the apparatus is characteri zed in that it comprises further means to achieve a PEALD deposition . The latter are known to those skilled in the art and disclosed for example in WO 2020/ 069901 .

Another aspect of the invention, on its own or in the context of the preaddressed or still to be addressed, addresses a method of in-situ cleaning for cleaning an apparatus .

In one embodiment of the method according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the method comprises

• a step A, wherein at least one magnet arrangement recipient of an apparatus to be cleaned receives a magnet arrangement of the apparatus so that an Electron Cyclotron Resonance (ECR) arrangement adapted to provide electron cyclotron resonance inside the vacuum recipient is not provided; and

• a step B, wherein a continuous or pulsed DC voltage between at least two electrodes inside a vacuum recipient of the apparatus , in particular between a first electrode and a second electrode of the apparatus , is applied, in particular wherein the vacuum recipient contains a cleaning gas .

The method is suitable for in-situ cleaning any apparatus comprising a magnet arrangement , a magnet arrangement recipient , a vacuum recipient and at least two electrodes being a cathode and an anode . In one variant , any of the preaddressed or still to be addressed apparatuses may be in-situ cleaned by using this method . However, this method should not in any way be limited for cleaning the apparatuses described herein . Also other apparatuses not described herein but having a magnet arrangement , a magnet arrangement recipient , a vacuum recipient and at least two electrodes inside the vacuum recipient may be subj ected to the method .

In another embodiment of the method according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the method comprises :

• a step A of receiving the magnet arrangement by the at least one magnet arrangement recipient , wherein the magnet arrangement does not form an Electron Cyclotron Resonance (ECR) arrangement adapted to provide electron cyclotron resonance ; and

• a step B of applying a continuous or pulsed DC voltage between at least two electrodes positioned inside the vacuum recipient of the apparatus or being part of the housing of the vacuum recipient , in particular between the first electrode and the second electrode of the apparatus , wherein the vacuum recipient contains a cleaning gas .

In step A of the embodiment , the complete magnet arrangement , in particular all of the one or more permanent magnet elements are received by the at least one magnet arrangement recipient . According to the method, either the magnet arrangement , and particularly the one or more permanent magnet elements , or the at least one magnet arrangement recipient is moved in a way that no magnetron discharge may develop inside the vacuum recipient . This can however also be achieved when both the magnet arrangement , and particularly the one or more permanent magnet elements , and the at least one magnet arrangement recipient are moved . Moreover, in one variant only some (not all ) permanent magnet elements can be received by the magnet arrangement recipient reducing the sputtering ef fect to almost zero .

Step B is in particular conducted after step A. Herein, a cleaning gas (BCla, CI2 , H2 , Ar, O2 , F2 , SFe, NF3, C_xF_y (with x=3 or 4 and y=8 ) , N2 , or a mixture thereof , introduced into the vacuum recipient before or during step B ) becomes at least partially ioni zed by the pulsed DC voltage applied between the first and the second electrode . A suitable DC voltage in a pulsed DC arrangement lies in a range of 400 V to 2000 V .

In another embodiment of the method according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the method of in- situ cleaning the apparatus compri ses

• a step B of applying a continuous or pulsed DC voltage between the first electrode and the second electrode , wherein the vacuum recipient contains a cleaning gas , and wherein the microwave transmissive material window is part of the second electrode .

The cleaning gas , for example BCla, CI2 , H2 , Ar, O2 , F2 , SFe, NF₃, C_xFy (with x=3 or 4 and y=8 ) , N2 or a mixture thereof can be introduced into the vacuum recipient before or during step B and becomes at least partially ioni zed by the pulsed DC voltage lying in the range of 400 V to 2000 V.

The microwave transmissive material window is part of the second electrode , meaning that it is electrically connected with the second electrode , for example via the electrically conductive frame and/or via at least one wire , or by being an integral part/one piece with the second electrode .

In another embodiment of the method according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the chuck acts as the first electrode and the housing of the vacuum recipient acts as the second electrode .

In another embodiment of the method according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the step B comprises a first cleaning mode for cleaning the inner surface of the housing and a second cleaning mode for cleaning the chuck . The use of the wording the " first" and the " second cleaning mode" describes the fact that the two modes are di f ferent from each other - the order of executing these two modes is not limited by the used wording, meaning that in some variants the " second cleaning mode" can be performed before the " first cleaning mode" . In the first cleaning mode , the inner surface of the housing, and particularly the inner surface of the microwave transmissive material window ( i f the window is part of the substrate treatment apparatus ) , are cleaned . In the second cleaning mode , at least a part , optionally the full chuck is cleaned .

In the context of the invention described herein, the cleaning process is in particular a plasma etching process .

In another embodiment of the method according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, a switch between the first cleaning mode and the second cleaning mode is achieved by a polarity switch of the pulsed DC voltage , which polarity switch is optionally performed by a control unit .

Herein, the polarity switch of the pulsed DC voltage can be optionally conducted by a control unit which is adapted and/or configured for this purpose . In the simplest variant , such a polarity switch can be performed manually by operating a respective pulsed DC voltage source . Further control means , such as for example a computer with an appropriate software , can be used as a control unit . In another embodiment of the method according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the housing of the vacuum recipient acts as a cathode and the chuck acts as an anode in the first cleaning mode and the housing of the vacuum recipient acts as an anode and the chuck acts as a cathode in the second cleaning mode .

In the first cleaning mode , meaning the mode for cleaning the inner surface of the housing of the vacuum recipient , the housing acts as the negative pole and the chuck acts as the positive pole .

In the second cleaning mode , which can be performed before or after the first cleaning mode in order to clean the chuck, the housing of the vacuum recipient acts as the positive pole and the chuck acts as the negative pole .

In another embodiment of the method according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the housing of the vacuum recipient and the microwave transmissive material window act as a cathode and the chuck acts as an anode in the first cleaning mode and the housing of the vacuum recipient and the microwave transmissive material window act as an anode and the chuck acts as a cathode in the second cleaning mode .

In the first cleaning mode , meaning the mode for cleaning the inner surface of the housing of the vacuum recipient and the inner surface of the microwave transmissive window (when the window is part of the apparatus) , the housing and the window act as the negative pole and the chuck acts as the positive pole.

In the second cleaning mode, which can be performed before or after the first cleaning mode in order to clean the chuck, the housing of the vacuum recipient and the microwave transmissive window act as the positive pole and the chuck acts as the negative pole.

In another embodiment of the method according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the cleaning gas is one of BC1₃, Cl₂, H₂, Ar, O₂, F₂, SF₆, NF₃, C_xF_y (with x=3 or 4 and y=8) and N₂.

In this embodiment, the cleaning gas (i.e. the gas used in the first and/or the second cleaning mode, in particular the gas from which etching ions are generated, wherein the etching ions can be used for cleaning the chuck and/or the microwave material transmissive window) is one of BC1₃, Cl₂, H₂, Ar, O₂, F₂, SF₆, NF₃, C_xF_y (with x=3 or 4 and y=8) and N₂ in their gaseous states.

C_xF_y is selected from the group consisting of C₃F₃, C4F8, or any other compound consisting only of carbon and fluorine atoms and being a stable, isolable and analyzable gaseous compound. In the case that a A1₂O₃ or AIN film should be etched, a fluorine-free cleaning gas should be used, i.e. not C_xF_y, F₂, SF₆, or NF₃. In another embodiment of the method according to the invention, which may be combined with any of the preaddressed embodiments and any of the embodiments still to be addressed unless in contradiction, the cleaning gas is a gas mixture comprising at least two of BCla, CI2 , H2 , Ar, O2 , F2 , SFe, NF3, C_xF_y (with x=3 or 4 and y=8 ) and N2 .

According to this embodiment , the cleaning gas ( i . e . the gas used in the first and/or the second cleaning mode , in particular the gas from which etching ions are generated, wherein the etching ions can be used for cleaning the chuck and/or the microwave material transmissive window) is not limited to be composed of only one chemical species . Moreover, the chemical gas can be a mixture of at least two , for example of 3 , 4 , 5 , 6 , 7 , 8 , 9 or 10 gas species which are inj ected together after a premixing, or one after the other .

One aspect of the invention, on its own or in the context of the preaddressed or still to be addressed, addresses a use of the apparatus for an in-situ cleaning of the apparatus , in particular an inside of the apparatus and further in particular the inside of a deposition chamber of the apparatus .

Another aspect of the invention, on its own or in the context of the preaddressed or still to be addressed, addresses a use of the method for an in-situ cleaning of the apparatus , in particular an inside of the apparatus and further in particular the inside of a deposition chamber of the apparatus .

The invention shall now be exempli fied with the help of figures . The figures are intended to provide a better understanding of the invention and should not limit the claimed matter . The figures show :

Fig . 1 : schematically and simpli fied, the structure of an apparatus according to the invention, suited to operate the method according to the invention;

Fig . 2 : schematically and simpli fied, the structure of an apparatus according to the invention, suited to operate the method according to the invention;

Fig . 3 : schematically and simpli fied, the structure of an apparatus according to the invention, suited to operate the method according to the invention ;

Fig . 4 : a schematical view of the microwave transmissive material window according to the invention;

Fig . 5 : a schematical view of a substrate treatment apparatus according to the invention .

According to Fig . 1 the apparatus 1 comprises a vacuum recipient 2 , the volume of which is defined by a housing 3 . The housing 3 can be made of a metal or metal alloy . The apparatus 1 further comprises a pumping port 4 which is controllable for example manually or electronically by a control unit (not shown) . Furthermore , the apparatus 1 comprises at least one gas inlet 5 to the inside of the vacuum recipient 2 , having for example at least one gas valve .

The apparatus 1 moreover comprises a magnet arrangement 9 movable between at least two positions , preferably between two positions ( the movement represented in the figure by a double arrowed line ) in a way that a magnetic field suf ficient for ECR conditions is provided inside the vacuum recipient 2 when the magnet arrangement 9 is in the first position and a much-reduced magnetic field is provided when the magnet arrangement 9 is in the second position . Hence , in the first position of the magnet arrangement 9, the magnet arrangement 9 forms an ECR arrangement adapted to provide electron cyclotron resonance inside the vacuum recipient 2 . In the second position of the magnet arrangement 9 , the magnet arrangement 9 does not form a magnetic field suf ficient to maintain the said ECR arrangement . The apparatus 1 further comprises an optional control unit 12 which is operationally connected to the apparatus 1 via electrical wires or cables , fibers , or wireless ( or is an integral part of the apparatus 1 ) to control the processes and values of the apparatus 1 .

An apparatus configured to be operable in the second mode ( e . g . a plasma etching mode or in-situ plasma cleaning mode ) comprises at least one controllable power source 6 functionally coupled to a first electrode 7 and a second electrode 8 to generate an electric field inside the vacuum recipient . In the depicted schematic apparatus , the first electrode 7 is embodied by the chuck 11 and the second electrode 8 is embodied by the housing 3 of the vacuum recipient 2 . It is however also possible that di f ferent or additional and not depicted elements di f ferent from the housing 3 and the chuck 11 function as the first and the second electrode .

An apparatus configured to be operable in the first mode either comprises another controllable power source 6 , in particular an UHF power source , or it uses the said power source 6 as the one of the second mode to generate in particular microwaves to be coupled to the inside of the vacuum recipient in the first mode .

An optional interrupter switch 20 is functionally connected to the at least one power source 6 .

Fig . 2 shows an alternative apparatus 1 , wherein the apparatus 1 comprises a vacuum recipient 2 , the volume of which is defined by a housing 3 . The housing 3 can be made of a metal or metal alloy . The apparatus 1 further comprises a pumping port 4 which is controllable for example manually or electronically by a control unit .

Furthermore , the apparatus comprises a gas inlet 5 to the inside of the vacuum recipient 2 , having for example a gas valve . The apparatus further comprises an optional control unit 12 which is operationally connected to the apparatus 1 via electrical wires or cables , fibers , or wireless ( or is an integral part of the apparatus ) to control the processes and values of the apparatus 1 . The apparatus 1 moreover comprises a magnet arrangement 9 which comprises one or more magnet elements and forms an ECR arrangement adapted to provide electron cyclotron resonance inside the vacuum recipient 2 . An apparatus configured to be operable in the second mode ( e . g . a plasma etching mode ) comprises at least one controllable power source 6 functionally coupled to a first electrode 7 and a second electrode 8 in order to generate an electric field inside the vacuum recipient . In the depicted schematic apparatus , the first electrode 7 is embodied by the chuck 11 and the second electrode 8 is embodied by the housing 3 of the vacuum recipient 2 . It is however also possible that additional and not depicted elements di f ferent from the housing 3 and the chuck 11 function as the first and the second electrode .

Moreover, the apparatus 1 is characteri zed by at least one microwave transmissive material window 16 which vacuum- tightly seals the inside of the vacuum recipient 2 with respect to one or more than one controllable power sources 6 , in particular to the UHF power source . When operating the apparatus 1 in the second mode ( e . g . a plasma etching mode ) , the window 16 is part of the second electrode or floating . An optional interrupter switch 20 is functionally connected to the at least one power source 6 .

Fig . 3 shows an alternative apparatus being a modi fication of the apparatus in Fig . 1 , wherein the controllable pumping port 4 is replaced by a ( controllable ) pumping chamber 19 . The latter can be functionally connected to a vacuum pump (not shown) . The pumping chamber 19 is configured to receive the chuck, or alternatively another substrate holder, from the outside or from the vacuum recipient 2 . The functional connection between the inside of the vacuum recipient 2 and the pumping chamber 19 is provided for example by a closable opening or a separating valve ( represented in the drawing by a dashed line ) .

Fig . 4 shows a perspective view on a simpli fied microwave transmissive material window 16 . The depicted window 16 comprises an essentially rectangular frame 17 which frames , i . e . surrounds and limits the extension of the microwave transmissive material in one plane . Within the frame , sealing materials , such as for example a sealing ring, can be arranged . The window 16 shown herein further comprises nine electrically conductive wires 18 which are arranged parallel to each other and are electrically conductively connected to said frame 17 . However, also a di f ferent number of wires 18 , such as for example 5 to 15 wires 18 can be used .

Fig . 5 shows an alternative apparatus 1 , wherein the at least one controllable pumping port is a pumping chamber 19 , the pumping chamber 19 being an integral part of the vacuum recipient 3 . The pumping chamber 19 and the vacuum recipient 2 are functionally connected . The chuck 11 is movably arranged between the inside of the vacuum recipient 2 and the inside of the pumping chamber 19 , e . g . , through a closable opening ( in the figure the chuck 11 is positioned inside the pumping chamber 19 ) . The depicted variant comprises one gas inlet 5 , however also variants with more than one gas inlets 5 are possible . In this figure , the magnet or magnets , which is/are a part of the magnet arrangement 9 , are outside the vacuum recipient 2 ( first position) and can generate a magnetic field inside the vacuum recipient 2 . A movement of said magnet or magnets in the second position, in particular inside the one or more magnet arrangement recipient or recipients 13 ( only one recipient marked) results in a magnetic field inside the vacuum recipient 2 insuf ficient to sustain a magnetron discharge during operation in the second mode , e . g . plasma cleaning or etching mode .

The apparatus in Fig . 5 moreover comprises an optional valve , in particular a pressure valve arranged between the vacuum recipient 3 and the pumping chamber 19 and suitable for pressure equali zation and/or evacuating the vacuum recipient 3 by the vacuum pump ( depicted as the circle at the bottom of the figure ) . An optional interrupter switch 20 is functionally connected to the at least one power source 6 and allows for modulating, in particular not providing ( switching of f ) the electric field deriving from the voltage power source in the first mode , and/or providing ( switching on) the electric field in the second mode between the at least two electrodes . List of reference signs

1 substrate treatment apparatus

2 vacuum recipient

3 housing of the vacuum recipient

4 pumping port

5 gas inlet

6 power source

7 first electrode

8 second electrode

9 magnet arrangement

10 permanent magnet element or elements

11 chuck

12 control unit

13 magnet arrangement recipient

16 microwave transmissive material window

17 frame

18 wire or wires

19 pumping chamber

20 interrupter switch

Claims

1. A substrate treatment apparatus (1) comprising:

• a vacuum recipient (2) defined by a housing (3) with an inner surface, the vacuum recipient (2) having an inside ;

• at least one controllable pumping port (4) adapted to evacuate the vacuum recipient (2) ;

• at least one controllable gas inlet (5) to the inside of the vacuum recipient (2) ;

• at least one controllable power source (6) , in particular a UHF power source, adapted to generate an electric field at least inside the vacuum recipient;

• a magnet arrangement (9) movable between a first position and a second position and generating in the first position a magnetic field at least inside the vacuum recipient (2) , the magnet arrangement (9) comprising one or more permanent magnet elements (10) ;

• a chuck (11) arranged inside the vacuum recipient (2) and adapted to hold a substrate; and optionally

• a control unit (12) , and wherein the magnet arrangement (9) in the first position forms an Electron Cyclotron Resonance (ECR) arrangement adapted to provide electron cyclotron resonance, characterized in that the substrate treatment apparatus (1) further comprises • at least one magnet arrangement recipient (13) adapted to receive the magnet arrangement (9) in its second position, wherein the magnet arrangement (9) in the second position does not form an Electron Cyclotron Resonance (ECR) arrangement adapted to provide electron cyclotron resonance.

2. The apparatus (1) according to claim 1, wherein the magnet arrangement (9) in the second position is not generating a magnetic field inside the vacuum recipient (2) , in particular sufficient to maintain a magnetron discharge .

3. The apparatus (1) according to claim 1 or 2, wherein the magnet arrangement recipient (13) is configured to shield at least the magnetic field lines of the magnet arrangement (9) in its second position, which magnetic field lines would otherwise generate a magnetic field inside the vacuum recipient (2) , in particular sufficient to maintain a magnetron discharge.

4. The apparatus (1) according to any one of claims 1 to 3, wherein the magnet arrangement recipient (13) comprises or consists of a ferromagnetic material, in particular iron or ferromagnetic steel, further in particular a soft- magnetic material with a low remanence magnetization.

5. The apparatus (1) according to any one of claims 1 to 4, wherein the apparatus (1) is configured to be operable in a first mode and in a second mode, wherein: in the first mode the at least one controllable power source (6) , in particular UHF power source, is switched on and the magnet arrangement (9) is in its first position; in the second mode the at least one controllable power source (6) provides a continuous or pulsed DC voltage between a first electrode (7) and a second electrode (8) , wherein the first electrode (7) is arranged inside the vacuum recipient (2) or is the housing (3) of the vacuum recipient (2) , wherein the second electrode (8) is arranged inside the vacuum recipient (2) or is the housing (3) of the vacuum recipient (2) , wherein the inside of the vacuum recipient (2) contains a cleaning gas, and the magnet arrangement (9) is in its second position, and wherein optionally the control unit (12) is configured to control the switch between the first mode and the second mode .

6. A microwave transmissive material window (16) comprising an electrically conductive frame (17) and one or multiple electrically conductive wires (18) connected to the frame (17) and contacting the surface of the microwave transmissive material window (16) or arranged with a distance to the surface of the microwave transmissive material window (16) .

7. The apparatus (1) according to any one of claims 1 to 5 further comprising at least one microwave transmissive material window (16) according to claim 6 and sealing the inside of the vacuum recipient (2) with respect to the at least one controllable power source (6) , the at least one controllable power source (6) being in particular a UHF power source .

8. A substrate treatment apparatus (1) comprising:

• at least one controllable power source (6) , in particular a UHF power source adapted to generate an electric field at least inside the vacuum recipient (2) ;

• a magnet arrangement (9) generating a magnetic field at least inside the vacuum recipient (2) , the magnet arrangement (9) comprising one or more permanent magnet elements (10) ;

• a control unit (12) , and wherein the magnet arrangement (9) forms an Electron Cyclotron Resonance (ECR) arrangement adapted to provide electron cyclotron resonance, characterized in that the substrate treatment apparatus (1) comprises

• at least one microwave transmissive material window

(16) according to claim 6 and sealing the inside of the vacuum recipient (2) with respect to the at least one controllable power source (6) , being in particular a UHF power source .

9. The apparatus (1) according to claim 8, wherein the apparatus (1) is configured to be operable in a first mode and in a second mode, wherein: in the first mode the at least one controllable power source (6) , in particular UHF power source, is switched on; in the second mode the at least one controllable power source (6) provides a continuous or pulsed DC voltage between a first electrode (7) and a second electrode (8) , wherein the first electrode (7) is arranged inside the vacuum recipient (2) or is the housing (3) of the vacuum recipient (2) , wherein the second electrode (8) is arranged inside the vacuum recipient (2) or is the housing (3) of the vacuum recipient (2) , wherein the at least one microwave transmissive material window (16) is part of the second electrode (8) or floating, wherein the inside of the vacuum recipient (2) contains a cleaning gas, and wherein optionally the control unit (12) is configured to control the switch between the first mode and the second mode .

10. The apparatus (1) according to claim 5 or claim 7 or claim 9, wherein the chuck (11) is the first electrode (7) and/or the housing (3) is the second electrode (8) .

11. The apparatus (1) according to any one of claims 1 to 5 or claim 7, or any one of claims 8 to 10, wherein the one or more permanent magnet elements (10) have the shape of a torus or of a semi-torus.

12. The apparatus (1) according to any one of claims 1 to 5 or claim 7, or any one of claims 8 to 11, wherein the at least one controllable pumping port (4) is a pumping chamber (19) , which pumping chamber (19) is optionally arranged adjacent, particularly connected, to the housing of the vacuum recipient (3) .

13. The apparatus (1) according to any one of claims 1 to 5 or claim 7, or any one of claims 8 to 12, further comprising a separating valve, which separating valve separates the pumping chamber (19) from the vacuum recipient (2) , the separating valve being in particular a ring valve.

14. The apparatus (1) according to any one of claims 1 to 5 or claim 7, or any one of claims 8 to 13, wherein the chuck (11) is movably arranged between the inside of the vacuum recipient (2) and the pumping chamber (19) .

15. The apparatus (1) according to any one of claims 1 to 5 or claim 7, or any one of claims 8 to 14 comprising a multiple-way tap connected to the at least one controllable gas inlet (5) .

16. The apparatus (1) according to any one of claims 1 to 5 or claim 7, or any one of claims 8 to 15 comprising at least one further controllable gas inlet (5) to the inside of the vacuum recipient (2) , wherein at least one controllable gas inlet (5) is a controllable reactive gas inlet .

17. The apparatus (1) according to any one of claims 1 to 5 or claim 7, or any one of claims 8 to 15 comprising at least two further controllable gas inlets (5) to the inside of the vacuum recipient (2) , wherein at least one controllable gas inlet (5) is a controllable reactive gas inlet, at least one controllable gas inlet (5) is a controllable process gas inlet and at least one controllable gas inlet (5) is a cleaning gas inlet.

18. The apparatus (1) according to any one of claims 1 to

5 or claim 7, or any one of claims 8 to 17 comprising a waveguide arrangement, which waveguide arrangement comprises at least one microwave waveguide arranged at a coupling area to the inside of the vacuum recipient (2) .

19. The apparatus (1) according to claim 5 or 9, wherein the first mode is a deposition mode, and the second mode is an in-situ cleaning mode.

20. The apparatus (1) according to claim 7 or according to any one of claims 8 to 19, wherein the microwave transmissive material of the microwave transmissive material window (16) is made of any microwave transmissive material, in particular of glass, quartz, or a polymer.

21. The apparatus (1) according to claim 7 or according to any one of claims 8 to 20, wherein the multiple electrically conductive wires (18) are arranged on the surface of the microwave transmissive material window (16) inside the vacuum recipient (2) and/or on the surface of the microwave transmissive material window (16) outside the vacuum recipient (2) .

22. The apparatus (1) according to claim 7 or according to any one of claims 8 to 21, wherein the microwave transparency of the microwave transmissive material window (16) is 90% and/or more than 90%.

23. The apparatus (1) according to claim 7 or according to any one of claims 8 to 22, wherein the microwave transmissive material window (16) has a total size in the range of 100 mm to 200 mm times 50 mm to 100 mm, in particular 145.3 mm times 61.3 mm, the size of the surface not covered by the frame (17) is in the range of 99 mm to 199 mm times 49 mm to 99 mm, in particular 130 mm times 46 mm, and wherein the microwave transmissive material window (16) comprises 15 0.5 mm thick wires (18) with a distance of 2.5 mm between each wire (18) .

24. The apparatus (1) according to claim 7 or according to any one of claims 8 to 23, wherein the electrically conductive frame (17) and at least one, in particular all of the electrically conductive wires (18) are metallic.

25. The apparatus (1) according to claim 7 or according to any one of claims 8 to 24, wherein the electrically conductive frame (17) and at least one, in particular all of the electrically conductive wires (18) comprise a Ni-coating .

26. The apparatus (1) according to claim 7 or according to any one of claims 8 to 25, wherein the electrically conductive wires (18) are arranged in a plane parallel to a plane of a cross-sectional area of the microwave waveguide and are arranged parallel to at least one larger side of the cross-sectional area of the microwave waveguide, in particular parallel to the larger side of the cross- sectional area of the microwave waveguide in a rectangular shape .

27. The apparatus (1) according to any one of claims 1 to

5, or 7 to 26 wherein the apparatus (1) is a plasma enhanced atomic layer deposition (PEALD) apparatus.

28. A method of in-situ cleaning for cleaning an apparatus (1) according to any one of claims 1 to 5 or claim 7, or any one of claims 9 to 27 comprising:

• a step A, wherein at least one magnet arrangement recipient (13) of an apparatus (1) to be cleaned receives a magnet arrangement (9) of the apparatus

(1) so that an Electron Cyclotron Resonance (ECR) arrangement adapted to provide electron cyclotron resonance inside the vacuum recipient (2) is not provided; and

• a step B, wherein a continuous or pulsed DC voltage between at least two electrodes positioned inside a vacuum recipient (2) of the apparatus (1) or being part of the housing (3) of the vacuum recipient (2) , in particular between the first electrode (7) and the second electrode (8) of the apparatus (1) , is applied, in particular wherein the vacuum recipient

(2) contains a cleaning gas.

29. A method of in-situ cleaning an apparatus (1) according to any one of claims 1 to 5 or claim 7, or any one of claims 9 to 27 comprising:

• a step A of receiving the magnet arrangement (9) by the at least one magnet arrangement recipient (13) , wherein the magnet arrangement (9) does not form an Electron Cyclotron Resonance (ECR) arrangement adapted to provide electron cyclotron resonance; and

• a step B of applying a continuous or pulsed DC voltage between at least two electrodes positioned inside a vacuum recipient (2) of the apparatus (1) or being part of the housing (3) of the vacuum recipient (2) , in particular between the first electrode (7) and the second electrode (8) of the apparatus (1) , wherein the vacuum recipient (2) contains a cleaning gas .

30. A method of in-situ cleaning an apparatus (1) according to any one of claims 9 to 27 comprising

• a step B of applying a continuous or pulsed DC voltage between the first electrode (7) and the second electrode (8) , wherein the vacuum recipient (2) contains a cleaning gas, and wherein the microwave transmissive material window (16) is part of the second electrode (8) .

31. The method according to claim 29 or claim 30, wherein the chuck (11) acts as the first electrode (7) and the housing of the vacuum recipient (3) acts as the second electrode ( 8 ) .

32. The method according to any of claims 29 to 31, wherein the step B comprises a first cleaning mode for cleaning the inner surface of the housing (3) and a second cleaning mode for cleaning the chuck (11) .

33. The method according to any one of claims 29 to 32, wherein a switch between the first cleaning mode and the second cleaning mode is achieved by a polarity switch of the pulsed DC voltage, which polarity switch is optionally performed by a control unit (12) .

34. The method according to any one of claims 29 to 33, wherein the housing (3) of the vacuum recipient (2) acts as a cathode and the chuck (11) acts as an anode in the first cleaning mode and wherein the housing (3) of the vacuum recipient (2) acts as an anode and the chuck (11) acts as a cathode in the second cleaning mode.

35. The method according to any one of claims 29 to 33, wherein the housing (3) of the vacuum recipient (2) and the microwave transmissive material window (16) act as a cathode and the chuck (11) acts as an anode in the first cleaning mode and wherein the housing (3) of the vacuum recipient (2) and the microwave transmissive material window (16) act as an anode and the chuck (11) acts as a cathode in the second cleaning mode.

36. The method according to any one of claims 29 to 35, wherein the cleaning gas is one of BCla, CI2, H2, Ar, O2, F2, SFe, NF3, C_xFy (with x=3 or 4 and y=8) and N2.

37. The method according to any of claims 29 to 35, wherein the cleaning gas is a gas mixture comprising at least two of BC1₃, Cl₂, H₂, Ar, 0₂, F₂, SF₆, NF₃, C_xF_y (with x=3 or 4 and y=8) and N2.

38. A use of an apparatus (1) according to any one of claims 1 to 5 or any one of claims 7 to 27 for an in-situ cleaning of the apparatus (1) .

39. A use of a method according to any one of claims 28 to 37 for an in-situ cleaning of an apparatus (1) according to any one of claims 1 to 5 or any one of claims 7 to 27.