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WO2025217899A1 - Electronic component and method for manufacturing an electronic component - Google Patents

Electronic component and method for manufacturing an electronic component

Info

Publication number
WO2025217899A1
WO2025217899A1 PCT/CN2024/088779 CN2024088779W WO2025217899A1 WO 2025217899 A1 WO2025217899 A1 WO 2025217899A1 CN 2024088779 W CN2024088779 W CN 2024088779W WO 2025217899 A1 WO2025217899 A1 WO 2025217899A1
Authority
WO
WIPO (PCT)
Prior art keywords
electronic component
contact recess
carrier element
semiconductor body
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2024/088779
Other languages
French (fr)
Inventor
Fei Shen
Aibin SHEN
Jia Liu
Suhang GU
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Ams Osram International GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ams Osram International GmbH filed Critical Ams Osram International GmbH
Priority to PCT/CN2024/088779 priority Critical patent/WO2025217899A1/en
Publication of WO2025217899A1 publication Critical patent/WO2025217899A1/en
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H10W72/075—
    • H10W72/50—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means
    • H10W90/755—

Definitions

  • the present application relates to an electronic component and a method for manufacturing an electronic component.
  • the electronic component is configured to emit and/or detect electromagnetic radiation, for example light that is perceptible to the human eye.
  • a further object is to provide a method for manufacturing an electronic component having improved long-term stability.
  • the electronic component comprises a semiconductor body, a carrier element and a bond wire.
  • the semiconductor body is in particular a monolithic element comprising a plurality of epitaxially grown semiconductor layers.
  • the semiconductor body comprises a first region, a second region and an active region arranged between the first and the second region.
  • the first region has a first conductivity type and the second region has a second conductivity type.
  • the first conductivity type is, for example, an n-type conductivity and the second conductivity type is, for example, a p-type conductivity or vice versa.
  • the first region is doped with a first doping material and the second region is doped with a second doping material.
  • the active region advantageously comprises a pn junction, a double heterostructure, a single quantum well (SQW) , or a multiple quantum well (MQW) structure for generating or detecting electromagnetic radiation.
  • the carrier element is preferably mechanically self-supporting.
  • the carrier element is in a planar shape extending in a main plane of extension.
  • the carrier element is for example formed as a lead frame.
  • the carrier element is formed with a metal or a metal alloy.
  • the bond wire is preferably formed with a metal or a metal alloy.
  • the bond wire is configured to provide the semiconductor body with an electrical current needed for operating the semiconductor body.
  • the semiconductor body is arranged on a mounting surface of the carrier element.
  • the mounting surface is preferably planar.
  • the carrier element comprises a contact recess.
  • the contact recess extends in particular from the mounting surface towards a rear surface of the carrier element.
  • the rear surface of the carrier element is in particular arranged opposite the mounting surface.
  • the contact recess comprises a bottom surface and side walls.
  • the bottom surface is in particular planar.
  • a planar bottom surface enables an easy mounting of the bond wire in the contact recess.
  • the bond wire extends from the semiconductor body to the bottom surface of the contact recess.
  • the bond wire extends from the mounting surface into the recess and to the bottom surface of the contact recess. This arrangement advantageously enables protection of the bond wire against mechanical damages.
  • the electronic component comprises a semiconductor body, a carrier element and a bond wire, wherein
  • the semiconductor body is arranged on a mounting surface of the carrier element
  • the carrier element comprises a contact recess
  • the contact recess comprises a bottom surface and side walls
  • the bond wire extends from the semiconductor body to the bottom surface of the contact recess.
  • An electronic component described herein is, inter alia, based on the following considerations: Reliability tests of electronic components often reveal broken bond wires. Bond wires can in particular be weakened at their mounting regions due to the effects of heat. The formation of balls on an end of a bonding wire is often caused by sparks heating up the wire bond and partially melting the material. This heat can cause heat-affected zones, which can further increase an unwanted formation of cracks in the wire bond.
  • the electronic component described herein makes use of the idea of protecting the end of a wire bond by mounting it inside a contact recess of a carrier element.
  • the contact recess can have a depth of several tens of ⁇ m to protect the wire neck and possibly any heat-affected zones of the wire bond.
  • the contact recess has a depth of at least 40 ⁇ m.
  • a contact recess of at least 40 ⁇ m in particular protects at least the first 40 ⁇ m of the wire bond from mechanical damage.
  • the depth of the contact recess is measured in a direction perpendicular to a main plane of extension of the carrier element.
  • the contact recess has a depth of at least 80 ⁇ m.
  • a contact recess of at least 40 ⁇ m in particular also protects any heat-affected zones of the wire bond.
  • the depth of the contact recess is less than a thickness of the carrier.
  • the thickness of the carrier element corresponds to an extension of the carrier element perpendicular to its main plane of extension. In other words, the contact recess does not completely extend through the carrier element.
  • the bond wire is formed with copper or gold. Copper and gold are particularly suitable for the formation of electrical connections because they have low electrical resistance and can be welded easily.
  • the bond wire has a thickness of at most 38 ⁇ m, preferably of at most 30 ⁇ m and particularly preferably of at most 25 ⁇ m. Thinner bond wires can help to decrease manufacturing costs due to the need for less material.
  • the contact recess is at least partially filled with filler particles.
  • the filler particles are formed with TiO 2 .
  • the filler particles can increase the mechanical stability of the bond wire by fixing it inside the contact recess.
  • the filler particles have a reflectivity of at least 80%, preferably of at least 90%and particularly preferably of at least 95%for electromagnetic radiation emitted or detected by the semiconductor body.
  • the contact recess has the shape of a truncated cone.
  • the side walls of the contact recess are inclined with respect to the bottom surface of the contact recess.
  • the electronic component comprises a shaped body which circumferentially surrounds the semiconductor body on the mounting surface and forms a mounting recess.
  • the shaped body is preferably formed with a mold material, such as a polymer for example.
  • the shaped body in particular completely surrounds the semiconductor body.
  • the semiconductor body is preferably arranged inside the mounting recess. In other words, the shaped body preferably protrudes beyond the semiconductor body in a vertical direction.
  • the vertical direction is oriented perpendicular to a main plane of extension of the carrier element. Moreover, the vertical direction is oriented parallel to a stacking direction of the multiple layers of semiconductor material in the semiconductor body.
  • the mounting recess is at least partially filled with a filler material having at least 50%wt of filler particles.
  • filler particles form at least 50%of the filler material in terms of weight.
  • the filler particles are formed with TiO 2 .
  • the filler particles can increase the mechanical stability of the bond wire by fixing it inside the contact recess.
  • the filler particles have a reflectivity of at least 80%, preferably of at least 90%and particularly preferably of at least 95%for electromagnetic radiation emitted or detected by the semiconductor body during operation.
  • the mounting recess can also be filled completely with filler material.
  • the filler material in particular comprises a polymer, for example a polysiloxane or an epoxy and filler particles.
  • the filler material is preferably permeable for electromagnetic radiation emitted or detected by the semiconductor body.
  • a method for manufacturing an electronic component is also disclosed.
  • the method for manufacturing an electronic component is particularly suitable for producing an electronic component described herein. This means that all features disclosed in connection with the electronic component are also disclosed for the method for manufacturing an electronic component and vice versa.
  • the method comprises a step of providing a semiconductor body arranged on a mounting surface of a carrier element.
  • the semiconductor body is in particular mounted on the carrier element by soldering.
  • the method comprises a step of forming a contact recess having a bottom surface and side walls in the carrier element.
  • the recess extends in particular from the mounting surface inside the carrier element.
  • the method comprises a step of attaching a bond wire on the bottom surface and on the semiconductor body.
  • the bond wire is in particular attached to the bottom surface by welding using ultrasonic energy.
  • the method comprises the steps of:
  • the contact recess is formed via etching of the carrier element.
  • the method comprises a step of dispensing a filler material comprising filler particles in the contact recess.
  • the filler material can for example be dispensed by jetting.
  • the filler material comprises at least 50%wt of filler particles.
  • a high filling grade of filler particles enables a high mechanical stability of the filler material which further increases the mechanical protection for the bond wire.
  • the method comprises a step of performing a sedimentation of filler particles in the contact recess.
  • the filler material comprises a gradient of filler particles, wherein the filler particles have a maximum concentration in the contact recess and on the mounting surface and a decreasing concentration with increasing distance from the mounting surface in the vertical direction.
  • the sedimentation is carried out in a centrifugal process.
  • an orientation of the centripetal force during the centrifugal process is parallel to the vertical direction.
  • An electronic component described herein is particularly suitable for use in light-emitting diodes.
  • Figure 1A shows a schematic cross-sectional view of an electronic component described herein according to a first exemplary embodiment
  • Figure 1B shows a schematic top view of an electronic component described herein according to the first exemplary embodiment
  • Figure 2A shows a schematic cross-sectional view of an electronic component described herein according to a second exemplary embodiment
  • Figure 2B shows a schematic top view of an electronic component described herein according to the second exemplary embodiment
  • Figure 3 shows a schematic cross-sectional view of an electronic component described herein according to a third exemplary embodiment.
  • Figure 1A shows a schematic cross-sectional view of an electronic component 1 described herein according to a first exemplary embodiment.
  • the electronic component comprises a semiconductor body 10, a carrier element 20 and a bond wire 30.
  • the semiconductor body 10 is in particular a monolithic element comprising a plurality of epitaxially grown semiconductor layers.
  • the semiconductor body 10 comprises a first region 101, a second region 102 and an active region 103 arranged between the first region 101 and the second region 102.
  • the first region 101 has a first conductivity type and the second region 102 has a second conductivity type.
  • the first conductivity type is, for example, an n-type conductivity and the second conductivity type is, for example, a p-type conductivity or vice versa.
  • the first region 101 is doped with a first doping material and the second region 102 is doped with a second doping material.
  • the active region 103 comprises a pn junction, a double heterostructure, a single quantum well (SQW) , or a multiple quantum well (MQW) structure for generating or detecting electromagnetic radiation.
  • SQL single quantum well
  • MQW multiple quantum well
  • the carrier element 20 is preferably mechanically self-supporting.
  • the carrier element 20 is in a planar shape extending in a main plane of extension.
  • the semiconductor body 10 is arranged on a mounting surface 20A of the carrier element 20.
  • the mounting surface 20A is preferably planar.
  • the carrier element 20 further comprises a contact recess 40.
  • the contact recess 40 extends in particular from the mounting surface 20A towards a rear surface 20B of the carrier element 20.
  • the rear surface 20B of the carrier element 20 is in particular arranged opposite the mounting surface 20A.
  • the contact recess 40 comprises a bottom surface 40A and side walls 40B.
  • the bottom surface 40A is in particular planar.
  • a planar bottom surface 40A enables an easy mounting of the bond wire 30 in the contact recess 40.
  • the bond wire 30 is preferably formed with a metal or a metal alloy.
  • the bond wire 30 is formed with copper or gold. Copper and gold are in particular suitable for the formation of electrical connections because it has a low electrical resistance and can be welded easily.
  • the bond wire is configured to provide the semiconductor body 10 with an electrical current needed for operating the active region 103 of the semiconductor body 10.
  • the bond wire 30 extends in a vertical direction Y from the semiconductor body 10 to the bottom surface 40A of the contact recess 40.
  • the bond wire 30 extends from the mounting surface 20A into the recess 40 and to the bottom surface 40A of the contact recess 40. This arrangement advantageously enables a protection of the bond wire 30 against mechanical damages.
  • the vertical direction Y is oriented perpendicular to a main plane of extension of the carrier element 20. Moreover, the vertical direction Y is oriented parallel to a stacking direction of the multiple layers of semiconductor material in the semiconductor body 10.
  • a lateral direction X is oriented perpendicular to the vertical direction Y. The lateral direction X is in particular oriented parallel to a main plane of extension of the carrier element 20.
  • Figure 1B shows a schematic top view of an electronic component 1 described herein according to the first exemplary embodiment.
  • the contact recess 40 has a circular shape.
  • the side walls 40B of the contact recess 40 are inclined with respect to the bottom surface 40A of the contact recess 40.
  • the contact recess 40 has the shape of a truncated cone.
  • FIG 2A shows a schematic cross-sectional view of an electronic component 1 described herein according to a second exemplary embodiment.
  • the second exemplary embodiment is essentially equal to the first exemplary embodiment shown in figures 1A and 1B.
  • the electronic component 1 comprises a shaped body 201.
  • the shaped body 201 circumferentially surrounds the semiconductor body 10 on the mounting surface 20A, thus forming a mounting recess 60.
  • the carrier element 20 is formed with a metal or a metal alloy.
  • the shaped body 201 is formed with a mold material, such as a polymer for example.
  • the semiconductor body 10 is arranged inside the mounting recess 60.
  • the shaped body 201 protrudes beyond the semiconductor body 10 in the vertical direction Y.
  • the shaped body 201 delimits an extension of the filler material 50 in the lateral direction X.
  • the mounting recess 60 is at least partially filled with a filler material 50 having at least 50%wt of filler particles 501.
  • the filler particles 501 are formed with TiO 2 .
  • the filler particles 501 can increase the mechanical stability of the bond wire by fixing it inside the contact recess 40.
  • the filler particles 501 have a reflectivity of at least 80%, preferably of at least 90%and particularly preferably of at least 95%for electromagnetic radiation emitted or detected by the semiconductor body 10 during operation.
  • the mounting recess 60 can also be filled completely with filler material 50.
  • the filler material 50 in particular comprises a polymer, for example a polysiloxane or an epoxy, and filler particles.
  • the filler material 50 is preferably permeable for electromagnetic radiation emitted or detected by the semiconductor body 10.
  • Figure 2B shows a schematic top view of an electronic component 1 described herein according to the second exemplary embodiment.
  • the shaped body 201 completely surrounds the semiconductor body 10 in a top view.
  • Figure 3 shows a schematic cross-sectional view of an electronic component 1 described herein according to a third exemplary embodiment.
  • the third exemplary embodiment is essentially equal to the second exemplary embodiment shown in figures 2A and 2B.
  • the detailed view in Figure 3 also shows the filler particles 501 of the filler material 50.
  • the filler particles 501 accumulate in the contact recess 40.
  • the filler material 50 comprises a gradient of filler particles 501, wherein the filler particles 501 have a maximum concentration in the bottom surface 40A of the contact recess 40 and on the mounting surface 20A and a decreasing concentration with increasing distance from the mounting surface 20A in the vertical direction Y.
  • the sedimentation is preferably carried out in a centrifugal process.
  • an orientation of the centripetal force during the centrifugal process is oriented parallel to the vertical direction Y.
  • the contact recess 40 has a depth of at least 80 ⁇ m.
  • a contact recess 40 of at least 40 ⁇ m in particular also protects any heat-affected zones of the wire bond 30.
  • the depth 40Y of the contact recess 40 is measured in a direction perpendicular to a main plane of extension of the carrier element 20.
  • the depth 40Y of the contact recess 40 is less than a thickness 20Y of the carrier element 20.
  • the thickness 20Y of the carrier element 20 corresponds to an extension of the carrier element 20 perpendicular to its main plane of extension. In other words, the contact recess 40 does not completely extend through the carrier element 20.
  • the bond wire 30 has a thickness 30X of at most 38 ⁇ m, preferably of at most 30 ⁇ m and particularly preferably of at most 25 ⁇ m. Thinner bond wires 30 can help to decrease manufacturing costs due to the need for less material.

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  • Led Device Packages (AREA)

Abstract

An electronic component (1) comprising a semiconductor body (10), a carrier element (20) and a bond wire (30) is described herein. The semiconductor body (10) is arranged on a mounting surface (20A) of the carrier element (20). The carrier element (20) comprises a contact reces s (40). The contact recess (40) comprises a bottom surface (401) and side walls (402). The bond wire (30) extends from the semiconductor body (10) to the bottom surface (401) of the contact recess (40). Furthermore, a method for manufacturing an electronic component (1) is provided.

Description

ELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING AN ELECTRONIC COMPONENT
The present application relates to an electronic component and a method for manufacturing an electronic component. In particular, the electronic component is configured to emit and/or detect electromagnetic radiation, for example light that is perceptible to the human eye.
It is an object of the present disclosure to provide an electronic component having improved long-term stability.
A further object is to provide a method for manufacturing an electronic component having improved long-term stability.
These objects are achieved by devices and a method according to the independent patent claims. Advantageous embodiments and further developments of the devices and the method are the subject of the dependent patent claims and are furthermore apparent from the following description and the figures.
According to at least one embodiment the electronic component comprises a semiconductor body, a carrier element and a bond wire.
The semiconductor body is in particular a monolithic element comprising a plurality of epitaxially grown semiconductor layers. For example, the semiconductor body comprises a first region, a second region and an active region arranged between the first and the second region. Preferably, the first region  has a first conductivity type and the second region has a second conductivity type.
The first conductivity type is, for example, an n-type conductivity and the second conductivity type is, for example, a p-type conductivity or vice versa. For example, the first region is doped with a first doping material and the second region is doped with a second doping material.
The active region advantageously comprises a pn junction, a double heterostructure, a single quantum well (SQW) , or a multiple quantum well (MQW) structure for generating or detecting electromagnetic radiation.
The carrier element is preferably mechanically self-supporting. In particular, the carrier element is in a planar shape extending in a main plane of extension. The carrier element is for example formed as a lead frame. Preferably, the carrier element is formed with a metal or a metal alloy.
The bond wire is preferably formed with a metal or a metal alloy. In particular, the bond wire is configured to provide the semiconductor body with an electrical current needed for operating the semiconductor body.
According to at least one embodiment of the electronic component, the semiconductor body is arranged on a mounting surface of the carrier element. The mounting surface is preferably planar.
According to at least one embodiment of the electronic component, the carrier element comprises a contact recess. The contact recess extends in particular from the mounting  surface towards a rear surface of the carrier element. The rear surface of the carrier element is in particular arranged opposite the mounting surface.
According to at least one embodiment of the electronic component, the contact recess comprises a bottom surface and side walls. The bottom surface is in particular planar. A planar bottom surface enables an easy mounting of the bond wire in the contact recess.
According to at least one embodiment of the electronic component, the bond wire extends from the semiconductor body to the bottom surface of the contact recess. In particular, the bond wire extends from the mounting surface into the recess and to the bottom surface of the contact recess. This arrangement advantageously enables protection of the bond wire against mechanical damages.
According to at least one embodiment of the electronic component, the electronic component comprises a semiconductor body, a carrier element and a bond wire, wherein
- the semiconductor body is arranged on a mounting surface of the carrier element,
- the carrier element comprises a contact recess,
- the contact recess comprises a bottom surface and side walls,
- the bond wire extends from the semiconductor body to the bottom surface of the contact recess.
An electronic component described herein is, inter alia, based on the following considerations: Reliability tests of electronic components often reveal broken bond wires. Bond wires can in particular be weakened at their mounting regions  due to the effects of heat. The formation of balls on an end of a bonding wire is often caused by sparks heating up the wire bond and partially melting the material. This heat can cause heat-affected zones, which can further increase an unwanted formation of cracks in the wire bond.
The electronic component described herein, inter alia, makes use of the idea of protecting the end of a wire bond by mounting it inside a contact recess of a carrier element. The contact recess can have a depth of several tens of μm to protect the wire neck and possibly any heat-affected zones of the wire bond.
According to at least one embodiment of the electronic component, the contact recess has a depth of at least 40 μm. A contact recess of at least 40 μm in particular protects at least the first 40 μm of the wire bond from mechanical damage. The depth of the contact recess is measured in a direction perpendicular to a main plane of extension of the carrier element.
According to at least one embodiment of the electronic component, the contact recess has a depth of at least 80 μm. A contact recess of at least 40 μm in particular also protects any heat-affected zones of the wire bond.
According to at least one embodiment of the electronic component, the depth of the contact recess is less than a thickness of the carrier. The thickness of the carrier element corresponds to an extension of the carrier element perpendicular to its main plane of extension. In other words, the contact recess does not completely extend through the carrier element.
According to at least one embodiment of the electronic component, the bond wire is formed with copper or gold. Copper and gold are particularly suitable for the formation of electrical connections because they have low electrical resistance and can be welded easily.
According to at least one embodiment of the electronic component, the bond wire has a thickness of at most 38 μm, preferably of at most 30 μm and particularly preferably of at most 25 μm. Thinner bond wires can help to decrease manufacturing costs due to the need for less material.
According to at least one embodiment of the electronic component, the contact recess is at least partially filled with filler particles. In particular, the filler particles are formed with TiO2. The filler particles can increase the mechanical stability of the bond wire by fixing it inside the contact recess. Preferably, the filler particles have a reflectivity of at least 80%, preferably of at least 90%and particularly preferably of at least 95%for electromagnetic radiation emitted or detected by the semiconductor body.
According to at least one embodiment of the electronic component, the contact recess has the shape of a truncated cone. In particular, the side walls of the contact recess are inclined with respect to the bottom surface of the contact recess.
According to at least one embodiment, the electronic component comprises a shaped body which circumferentially surrounds the semiconductor body on the mounting surface and forms a mounting recess.
The shaped body is preferably formed with a mold material, such as a polymer for example. The shaped body in particular completely surrounds the semiconductor body. The semiconductor body is preferably arranged inside the mounting recess. In other words, the shaped body preferably protrudes beyond the semiconductor body in a vertical direction. The vertical direction is oriented perpendicular to a main plane of extension of the carrier element. Moreover, the vertical direction is oriented parallel to a stacking direction of the multiple layers of semiconductor material in the semiconductor body.
According to at least one embodiment of the electronic component, the mounting recess is at least partially filled with a filler material having at least 50%wt of filler particles. In other words, filler particles form at least 50%of the filler material in terms of weight. In particular, the filler particles are formed with TiO2. The filler particles can increase the mechanical stability of the bond wire by fixing it inside the contact recess. Preferably, the filler particles have a reflectivity of at least 80%, preferably of at least 90%and particularly preferably of at least 95%for electromagnetic radiation emitted or detected by the semiconductor body during operation.
For example, the mounting recess can also be filled completely with filler material. The filler material in particular comprises a polymer, for example a polysiloxane or an epoxy and filler particles. The filler material is preferably permeable for electromagnetic radiation emitted or detected by the semiconductor body.
A method for manufacturing an electronic component is also disclosed. The method for manufacturing an electronic component is particularly suitable for producing an electronic component described herein. This means that all features disclosed in connection with the electronic component are also disclosed for the method for manufacturing an electronic component and vice versa.
According to at least one embodiment of the method for manufacturing an electronic component the method comprises a step of providing a semiconductor body arranged on a mounting surface of a carrier element. The semiconductor body is in particular mounted on the carrier element by soldering.
According to at least one embodiment of the method for manufacturing an electronic component, the method comprises a step of forming a contact recess having a bottom surface and side walls in the carrier element. The recess extends in particular from the mounting surface inside the carrier element.
According to at least one embodiment of the method for manufacturing an electronic component, the method comprises a step of attaching a bond wire on the bottom surface and on the semiconductor body. The bond wire is in particular attached to the bottom surface by welding using ultrasonic energy.
According to at least one embodiment of the method for manufacturing an electronic component, the method comprises the steps of:
- providing a semiconductor body arranged on a mounting surface of a carrier element,
- forming a contact recess having a bottom surface and side walls in the carrier element,
- attaching a bond wire on the bottom surface and on the semiconductor body.
According to at least one embodiment of the method for manufacturing an electronic component, the contact recess is formed via etching of the carrier element.
According to at least one embodiment of the method for manufacturing an electronic component, the method comprises a step of dispensing a filler material comprising filler particles in the contact recess. The filler material can for example be dispensed by jetting.
According to at least one embodiment of the method for manufacturing an electronic component, the filler material comprises at least 50%wt of filler particles. A high filling grade of filler particles enables a high mechanical stability of the filler material which further increases the mechanical protection for the bond wire.
According to at least one embodiment of the method for manufacturing an electronic component, the method comprises a step of performing a sedimentation of filler particles in the contact recess. For example, the filler material comprises a gradient of filler particles, wherein the filler particles have a maximum concentration in the contact recess and on the mounting surface and a decreasing concentration with increasing distance from the mounting surface in the vertical direction.
According to at least one embodiment of the method for manufacturing an electronic component, the sedimentation is carried out in a centrifugal process. In particular, an orientation of the centripetal force during the centrifugal process is parallel to the vertical direction.
An electronic component described herein is particularly suitable for use in light-emitting diodes.
Further advantages and advantageous designs and further developments of the electronic component will become apparent from the following exemplary embodiments, which are described below in association with the figures.
In the figures:
Figure 1A shows a schematic cross-sectional view of an electronic component described herein according to a first exemplary embodiment,
Figure 1B shows a schematic top view of an electronic component described herein according to the first exemplary embodiment,
Figure 2A shows a schematic cross-sectional view of an electronic component described herein according to a second exemplary embodiment,
Figure 2B shows a schematic top view of an electronic component described herein according to the second exemplary embodiment, and
Figure 3 shows a schematic cross-sectional view of an electronic component described herein according to a third exemplary embodiment.
Identical, similar or equivalent elements are marked with the same reference signs in the figures. The figures and the proportions of the elements represented in the figures among each other are not to be considered as true to scale. Rather, individual elements may be oversized for better representability and/or comprehensibility.
Figure 1A shows a schematic cross-sectional view of an electronic component 1 described herein according to a first exemplary embodiment.
The electronic component comprises a semiconductor body 10, a carrier element 20 and a bond wire 30. The semiconductor body 10 is in particular a monolithic element comprising a plurality of epitaxially grown semiconductor layers. For example, the semiconductor body 10 comprises a first region 101, a second region 102 and an active region 103 arranged between the first region 101 and the second region 102. Preferably, the first region 101 has a first conductivity type and the second region 102 has a second conductivity type.
The first conductivity type is, for example, an n-type conductivity and the second conductivity type is, for example, a p-type conductivity or vice versa. For example, the first region 101 is doped with a first doping material and the second region 102 is doped with a second doping material.
The active region 103 comprises a pn junction, a double heterostructure, a single quantum well (SQW) , or a multiple quantum well (MQW) structure for generating or detecting electromagnetic radiation.
The carrier element 20 is preferably mechanically self-supporting. In particular, the carrier element 20 is in a planar shape extending in a main plane of extension. The semiconductor body 10 is arranged on a mounting surface 20A of the carrier element 20. The mounting surface 20A is preferably planar.
The carrier element 20 further comprises a contact recess 40. The contact recess 40 extends in particular from the mounting surface 20A towards a rear surface 20B of the carrier element 20. The rear surface 20B of the carrier element 20 is in particular arranged opposite the mounting surface 20A. The contact recess 40 comprises a bottom surface 40A and side walls 40B. The bottom surface 40A is in particular planar. A planar bottom surface 40A enables an easy mounting of the bond wire 30 in the contact recess 40.
The bond wire 30 is preferably formed with a metal or a metal alloy. Preferably, the bond wire 30 is formed with copper or gold. Copper and gold are in particular suitable for the formation of electrical connections because it has a low electrical resistance and can be welded easily.
In particular, the bond wire is configured to provide the semiconductor body 10 with an electrical current needed for operating the active region 103 of the semiconductor body 10. The bond wire 30 extends in a vertical direction Y from the semiconductor body 10 to the bottom surface 40A of the  contact recess 40. In particular, the bond wire 30 extends from the mounting surface 20A into the recess 40 and to the bottom surface 40A of the contact recess 40. This arrangement advantageously enables a protection of the bond wire 30 against mechanical damages.
The vertical direction Y is oriented perpendicular to a main plane of extension of the carrier element 20. Moreover, the vertical direction Y is oriented parallel to a stacking direction of the multiple layers of semiconductor material in the semiconductor body 10. A lateral direction X is oriented perpendicular to the vertical direction Y. The lateral direction X is in particular oriented parallel to a main plane of extension of the carrier element 20.
Figure 1B shows a schematic top view of an electronic component 1 described herein according to the first exemplary embodiment. In the top view the contact recess 40 has a circular shape. The side walls 40B of the contact recess 40 are inclined with respect to the bottom surface 40A of the contact recess 40. In other words, the contact recess 40 has the shape of a truncated cone.
Figure 2A shows a schematic cross-sectional view of an electronic component 1 described herein according to a second exemplary embodiment. The second exemplary embodiment is essentially equal to the first exemplary embodiment shown in figures 1A and 1B. In contrast to the first exemplary embodiment, the electronic component 1 comprises a shaped body 201. The shaped body 201 circumferentially surrounds the semiconductor body 10 on the mounting surface 20A, thus forming a mounting recess 60.
The carrier element 20 is formed with a metal or a metal alloy. The shaped body 201 is formed with a mold material, such as a polymer for example. The semiconductor body 10 is arranged inside the mounting recess 60. The shaped body 201 protrudes beyond the semiconductor body 10 in the vertical direction Y. The shaped body 201 delimits an extension of the filler material 50 in the lateral direction X.
The mounting recess 60 is at least partially filled with a filler material 50 having at least 50%wt of filler particles 501. In particular, the filler particles 501 are formed with TiO2. The filler particles 501 can increase the mechanical stability of the bond wire by fixing it inside the contact recess 40. Preferably, the filler particles 501 have a reflectivity of at least 80%, preferably of at least 90%and particularly preferably of at least 95%for electromagnetic radiation emitted or detected by the semiconductor body 10 during operation.
For example, the mounting recess 60 can also be filled completely with filler material 50. The filler material 50 in particular comprises a polymer, for example a polysiloxane or an epoxy, and filler particles. The filler material 50 is preferably permeable for electromagnetic radiation emitted or detected by the semiconductor body 10.
Figure 2B shows a schematic top view of an electronic component 1 described herein according to the second exemplary embodiment. The shaped body 201 completely surrounds the semiconductor body 10 in a top view.
Figure 3 shows a schematic cross-sectional view of an electronic component 1 described herein according to a third  exemplary embodiment. The third exemplary embodiment is essentially equal to the second exemplary embodiment shown in figures 2A and 2B. The detailed view in Figure 3 also shows the filler particles 501 of the filler material 50. In particular after performing a process step of sedimentation, the filler particles 501 accumulate in the contact recess 40.
For example, the filler material 50 comprises a gradient of filler particles 501, wherein the filler particles 501 have a maximum concentration in the bottom surface 40A of the contact recess 40 and on the mounting surface 20A and a decreasing concentration with increasing distance from the mounting surface 20A in the vertical direction Y. The sedimentation is preferably carried out in a centrifugal process. In particular, an orientation of the centripetal force during the centrifugal process is oriented parallel to the vertical direction Y.
The contact recess 40 has a depth of at least 80 μm. A contact recess 40 of at least 40 μm in particular also protects any heat-affected zones of the wire bond 30. The depth 40Y of the contact recess 40 is measured in a direction perpendicular to a main plane of extension of the carrier element 20.
The depth 40Y of the contact recess 40 is less than a thickness 20Y of the carrier element 20. The thickness 20Y of the carrier element 20 corresponds to an extension of the carrier element 20 perpendicular to its main plane of extension. In other words, the contact recess 40 does not completely extend through the carrier element 20.
The bond wire 30 has a thickness 30X of at most 38 μm, preferably of at most 30 μm and particularly preferably of at most 25 μm. Thinner bond wires 30 can help to decrease manufacturing costs due to the need for less material.
The invention described herein is not limited by the description given with reference to the exemplary embodiments. Rather, the invention encompasses any novel feature and any combination of features, including in particular any combination of features in the claims, even if this feature or this combination is not itself explicitly indicated in the claims or exemplary embodiments. References
1 electronic component 10 semiconductor body 101 first region 102 second region 103 active region 20 carrier element 201 shaped body 30 bond wire
40 contact recess 50 filler material 501 filler particles 60 mounting recess 40A bottom surface 40B side walls 40Y recess depth 20A mounting surface 20B rear surface 20Y carrier element thickness 30X bond wire thickness

Claims (16)

  1. Electronic component (1) comprising a semiconductor body (10) , a carrier element (20) and a bond wire (30) , wherein
    - the semiconductor body (10) is arranged on a mounting surface (20A) of the carrier element (20) ,
    - the carrier element (20) comprises a contact recess (40) ,
    - the contact recess (40) comprises a bottom surface (401) and side walls (402) ,
    - the bond wire (30) extends from the semiconductor body (10) to the bottom surface (401) of the contact recess (40) .
  2. Electronic component (1) according to the preceding claim, wherein
    - the contact recess (40) has a depth (40Y) of at least 40 μm.
  3. Electronic component (1) according to one of the preceding claims, wherein
    - the contact recess (40) has a depth (40Y) of at least 80 μm.
  4. Electronic component (1) according to one of the preceding claims, wherein
    - the depth (40Y) of the contact recess (40) is less than a thickness (20Y) of the carrier element (20) .
  5. Electronic component (1) according to one of the preceding claims, wherein
    - the bond wire (30) is formed with copper or gold.
  6. Electronic component (1) according to one of the preceding claims, wherein
    - the bond wire (30) has a thickness (30X) of at most 38 μm, preferably of at most 30 μm and particularly preferably of at most 25 μm.
  7. Electronic component (1) according to one of the preceding claims, wherein
    - the contact recess (40) is at least partially filled with filler particles (501) .
  8. Electronic component (1) according to the preceding claim, wherein
    - the contact recess (40) has the shape of a truncated cone.
  9. Electronic component (1) according to one of the preceding claims, further comprising
    - a shaped body (201) which circumferentially surrounds the semiconductor body (10) on the mounting surface (20A) and forms a mounting recess (60) .
  10. Electronic component (1) according to the preceding claim, wherein
    - the mounting recess (60) is at least partially filled with a filler material (50) having at least 50%wt of filler particles (501) .
  11. Method for manufacturing an electronic component (1) comprising the steps of:
    - providing a semiconductor body (10) arranged on a mounting surface (20A) of a carrier element (20) ,
    - forming a contact recess (40) having a bottom surface (401) and side walls (402) in the carrier element (20) ,
    - attaching a bond wire (30) on the bottom surface (401) and on the semiconductor body (10) .
  12. Method for manufacturing an electronic component (1) according to the preceding claim, wherein
    - the contact recess (40) is formed via etching of the carrier element (20) .
  13. Method for manufacturing an electronic component (1) according to one of the preceding claims, further comprising
    - dispensing a filler material (50) comprising filler particles (501) in the contact recess (40) .
  14. Method for manufacturing an electronic component (1) according to the preceding claim, wherein
    - the filler material comprises at least 50%wt of filler particles (501) .
  15. Method for manufacturing an electronic component (1) according to one of the preceding claims, further comprising
    - performing a sedimentation of filler particles (501) in the contact recess (40) .
  16. Method for manufacturing an electronic component (1) according to the preceding claim, wherein
    - the sedimentation is carried out in a centrifugal process.
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