WO2025206207A1 - Mounting pretreatment device, mounting system, and mounting pretreatment method - Google Patents

Abstract

The present invention provides a mounting pretreatment device, a mounting system, and a mounting pretreatment method capable of suppressing a reduction in bond strength on a bonding surface between an electronic component and a mounting substrate. A mounting pretreatment device 300 according to an embodiment performs mounting pretreatment on a bonding surface between an electronic component E and a mounting substrate BW prior to mounting the electronic component E on the mounting substrate BW, the mounting pretreatment device 300 including: a plasma treatment device 102 that applies a surface treatment using plasma to the bonding surface of the electronic component E and/or the mounting substrate BW; a cleaning device that cleans the electronic component E and/or the mounting substrate BW before and/or after the plasma treatment in the plasma treatment device 102; and a removal device 101 that, before the plasma treatment in the plasma treatment device 102, promotes the volatilization of a volatile component and removes the volatile component from a component supply body TW in which a sheet T having a sticky portion on the surface thereof is supported by a ring R and the electronic component E is stuck to the sheet T.

Description

Pre-mounting processing device, mounting system, and pre-mounting processing method

The present invention relates to a pre-mounting processing device, a mounting system, and a pre-mounting processing method.

Direct bonding is a method for mounting semiconductor chips, which are electronic components, to a mounting substrate. Direct bonding is a mounting method in which the connection terminals of the mounting substrate and semiconductor chip are directly bonded together without using bonding materials such as solder bumps. For example, the surfaces of the mounting substrate and semiconductor chip (protective films such as SiO2 films) are terminated with hydroxyl groups. By bringing these surfaces into contact and applying pressure and heat, the mounting substrate and semiconductor chip are bonded to each other through hydrogen bonds between the hydroxyl groups, which eventually change to covalent bonds via oxygen atoms. As a result, the connection terminals of the mounting substrate and semiconductor chip are diffusion bonded together in a nearly integrated manner.

"Bonding" includes "temporary bonding" and "permanent bonding." Temporary bonding is when an electronic component is directly mounted (bonded) to a mounting substrate, while permanent bonding is when the bonding surfaces of the temporarily bonded electronic component and mounting substrate are covalently bonded by annealing. In the following explanation, "temporary bonding" will be referred to as "mounting."

Semiconductor chips are electronic components formed by dicing a wafer into small pieces, and are adhered to an adhesive sheet attached to a ring. The component consisting of the ring and the sheet to which the diced wafer is adhered is called a component supply. Furthermore, the wafer on which electronic components are mounted after being removed from the component supply is called a mounting substrate.

When electronic components from a component supplier are directly bonded to a mounting substrate, the diced wafers and mounting substrates are pre-processed and cleaned beforehand. This pre-processing involves surface treatment (activation and cleaning). Activation is a process in which the surfaces of the electronic components and mounting substrates are activated using active species such as ions and radicals generated by turning a reactive gas into plasma. Activation involves breaking the chemical bonds of surface molecules, etching the oxide film formed on the surfaces of the electronic components and mounting substrates, and terminating the surfaces of the electronic components and mounting substrates with hydroxyl groups. Cleaning is a process in which the surfaces of the electronic components and mounting substrates are cleaned using the generated active species such as ions and radicals. Cleaning involves flicking away and removing particles adhering to the surface, and decomposing and removing organic matter.

In the following explanation, this activation and cleaning process using plasma will be referred to as surface treatment, and the equipment that performs this surface treatment will be referred to as a plasma treatment equipment. Generally, plasma treatment equipment can also perform processes other than surface treatment, and any process performed by a plasma treatment equipment that includes surface treatment will be broadly referred to as plasma treatment. This plasma treatment also includes reducing the pressure to generate plasma and increasing the pressure to release that pressure reduction. Pre-treatment will also be referred to as pre-mounting treatment. Cleaning treatment is a process in which particles and other substances present on the surfaces of electronic components and mounting boards are cleaned with a liquid such as water, and the equipment that performs this cleaning treatment will be referred to as a cleaning equipment.

Japanese Patent Application Laid-Open No. 2020-021966

However, this type of direct bonding can sometimes result in a decrease in the bond strength at the bonding surface between the electronic component and the mounting board. This decrease in bond strength can lead to poor quality in products manufactured by bonding (mounting) the electronic component to the mounting board.

Embodiments of the present invention aim to provide a pre-mounting processing device, a mounting system, and a pre-mounting processing method that can prevent a decrease in the bonding strength at the bonding surface between an electronic component and a mounting board.

The pre-mounting treatment device of this embodiment is a pre-mounting treatment device that performs pre-mounting treatment of the bonding surfaces of the electronic component and the mounting substrate before mounting the electronic component on the mounting substrate, and includes: a plasma treatment device that performs surface treatment of the bonding surfaces of the electronic component and/or the mounting substrate using plasma; a cleaning device that cleans the electronic component and/or the mounting substrate before and/or after the plasma treatment in the plasma treatment device; and a removal device that promotes volatilization of volatile components from a component supply body in which a sheet T having an adhesive portion on its surface is supported by a ring R and electronic components E are adhered to the sheet T, and removes the volatile components before the plasma treatment in the plasma treatment device.

The mounting system of this embodiment includes the pre-mounting processing device and a bonding device that removes the electronic components processed by the pre-mounting processing device from the component supply and mounts them on the mounting substrate.

The pre-mounting treatment method of this embodiment is a method for performing pre-mounting treatment of the bonding surfaces of an electronic component and a mounting substrate before mounting the electronic component on the mounting substrate, and includes a plasma surface treatment of the bonding surfaces of the electronic component and/or the mounting substrate, a cleaning treatment for cleaning the electronic component and/or the mounting substrate before and/or after the surface treatment, and a component supply body in which a sheet T having an adhesive portion on its surface is supported by a ring R and electronic components E are adhered to the sheet T, and the volatile components are removed by accelerating their evaporation before the surface treatment.

Embodiments of the present invention can prevent a decrease in bonding strength at the bonding surface between an electronic component and a mounting substrate.

FIG. 2 is an explanatory diagram illustrating the processing of each unit of the mounting system according to the embodiment. FIG. 1 is a simplified perspective plan view showing the configuration of a mounting system according to an embodiment. 1A and 1B are cross-sectional views showing the removal device of the embodiment, in which (A) is a cross-sectional view taken along line bb in (B), and (B) is a cross-sectional view taken along line aa in (A). 1 is a cross-sectional view showing a plasma processing apparatus according to an embodiment; FIG. 2 is a simplified configuration diagram showing a supplier cleaning device and a mounting substrate cleaning device of the mounting system. 10 is a graph showing the change in pressure inside a chamber in a removal device, where (A) shows the case where a component supply is plasma-treated, (B) shows the case where the chamber is empty and the component supply is stored and not plasma-treated, and (C) shows the case where the component supply is heated in addition to (B). 10 is a flowchart illustrating an operation procedure of the embodiment. FIG. 1 is a cross-sectional view of a removal device having a component detector. FIG. 10 is a cross-sectional view showing a modified example of the removal device. 10A and 10B are cross-sectional views showing a modified example of a removal device, in which (A) is a cross-sectional view taken along line gg of (B) showing a support section that supports multiple component supply bodies in a layered manner with spaces between them, and (B) is a cross-sectional view taken along line cc of (A). 10A and 10B are cross-sectional views showing a modified example of the removal device, in which (A) is a cross-sectional view showing that the support portion is pin-shaped, and (B) is a cross-sectional view taken along line dd of (A). 10A and 10B are cross-sectional views showing a modified example of a removal device, in which (A) is a cross-sectional view taken along line ff of (B) showing that the inner bottom of the chamber also serves as a support, and (B) is a cross-sectional view taken along line ee of (A). 1A is a cross-sectional view of a removal device showing an example in which the heater of the heating unit is ring-shaped, and FIG. 1B is a bottom view of the component supply body and the heating unit. FIG. 10 is a cross-sectional view showing a modified example of a removal device. FIG. 1 is a simplified perspective plan view showing a mounting system in which a mounting section has a plurality of bonding devices.

Embodiments of the present invention will be described below with reference to the drawings. Note that the drawings are schematic diagrams, and the size, proportions, etc. of various parts are exaggerated to make them easier to understand.

[overview]
1 and 2 , a mounting system 100 of this embodiment is an example of a system for mounting electronic components E supplied by a component supplier TW onto a mounting board BW. The mounting system 100 is composed of a mounting pre-processing unit X and a mounting unit Y. A mounting pre-processing device 300 serving as the mounting pre-processing unit X performs surface treatment (activation treatment, cleaning treatment) on the component supplier TW and the mounting board BW before mounting, and a bonding device 180 serving as the mounting unit Y mounts an electronic component E (semiconductor chip) picked up from the component supplier TW that has undergone pre-processing onto the mounting board BW that has also undergone pre-processing.

As shown in FIG. 1, the component supply TW comprises a sheet T with an adhesive portion on its surface supported by a ring R, with electronic components E adhered to the sheet T. In this embodiment, the component supply TW has a wafer (semiconductor wafer) W adhered to the center of the ring R of the sheet T. The wafer W is then diced into small electronic components E. The electronic components E are, for example, semiconductor chips. The sheet T is a thin, stretchable member made of resin, and its surface is provided with an adhesive portion containing a UV-curable resin whose adhesive strength can be reduced by irradiation with UV light. The mounting substrate BW is the wafer (semiconductor wafer, substrate) W on which the electronic components E detached from the component supply TW are mounted (bonded).

The pre-mounting processing device 300 performs pre-mounting processing of the bonding surfaces between the electronic component E and the mounting board BW before mounting the electronic component E on the mounting board BW. As shown in Figure 2, the pre-mounting processing device 300 of this embodiment can perform pre-mounting processing (surface processing) one by one on component supply bodies TW and mounting boards BW that are stored in multiple pieces in a transport container F such as a FOUP (Front Opening Unified Pod) or FOSB (Front Opening Shipping Box) and supplied from a previous process device, etc. The pre-mounting processing device 300 can also include a cleaning device that performs cleaning processing on the electronic component E and mounting board BW.

The mounting system 100 is configured by arranging multiple chambers 11b housing devices for performing various processes around the base 11a of a box-shaped container that serves as a transfer chamber, according to the process. In other words, the pre-mounting processing device 300, which handles the pre-mounting processing section X, and the bonding device 180, which handles the mounting section Y, are configured using chambers 11b that perform various processes.

An FFU (Fan Filter Unit) (not shown) is provided on the ceiling of the base 11a, and is configured to maintain a clean atmosphere inside the base 11a by creating a downflow of clean air. Such an FFU may also be provided in the chamber 11b as required. A conveying device 190 is provided inside the base 11a.

The base 11a is also provided with a load port 11c on which a transfer container F is mounted. The transfer container F containing unprocessed component supplies TW and mounting boards BW is mounted on the load port 11c. The component supplies TW and mounting boards BW are removed one by one from this transfer container F by a transfer device 190. The component supplies TW or mounting boards BW removed by the transfer device 190 are carried into each chamber 11b, processed, and removed.

The mounting system 100 of this embodiment may have a buffer device that temporarily stores component suppliers TW and mounting boards BW. This buffer device may be included in the mounting pre-processing unit X, or it may also be included in the mounting unit Y.

More specifically, the mounting system 100 of this embodiment is a system including a removal device 101, a plasma processing device 102, a supply cleaning device 110, a mounting substrate cleaning device 120, an adjustment processing device 130, a gauging device 140, an alignment device 150, a supply buffer device 160, a mounting substrate buffer device 170, a bonding device 180, a transport device 190, and a control device 200. The removal device 101, plasma processing device 102, supply cleaning device 110, a mounting substrate cleaning device 120, an adjustment processing device 130, a gauging device 140, an alignment device 150, a supply buffer device 160, a mounting substrate buffer device 170, a transport device 190, and a control device 200 constitute a mounting pre-processing unit X, and the bonding device 180 and the control device 200 constitute a mounting unit Y.

The removal device 101 removes volatile components from the component supply TW. The plasma processing device 102 performs surface treatment on the component supply TW and the mounting board BW. The supply cleaning device 110 cleans the component supply TW, and the mounting board cleaning device 120 cleans the mounting board BW. The adjustment processing device 130 reduces the adhesive force of the sheet T on the component supply TW. The gauging device 140 positions the component supply TW, and the alignment device 150 positions the mounting board BW. The supply buffer device 160 temporarily stores the component supply TW, and the mounting board buffer device 170 temporarily stores the mounting board BW. The bonding device 180 detaches the electronic components E from the component supply TW and places (mounts) them on the mounting board BW. The transport device 190 transports the component supply TW and the mounting board BW between each part and device. The control device 200 controls each part of the mounting system 100. Each part will be explained in detail below.

[Removal device]
The removal device 101 is a device that promotes the volatilization of volatile components from the component supply body TW and removes the volatilized volatile components before plasma processing in the plasma processing device 102. As shown in FIG. 3 , the removal device 101 has a chamber 1, a support unit 2, an exhaust unit 3, a heating unit 4, a purge unit 5, and a pressure detector 6.

Chamber 1 of removal device 101 is configured as one of chambers 11b, and is a container that stores component supplies TW before plasma processing. Chamber 1 in this embodiment is a container that can be evacuated. Chamber 1 is provided with an exhaust port 1a for evacuating gas from within chamber 1 and for discharging volatile components that have evaporated from the component supplies TW, a purge hole 1b for opening to the atmosphere, and a detection port 1c for detecting pressure. Chamber 1 also has a transfer port 1d on the front side in the figure for loading and unloading the component supplies TW, which can be opened and closed by a shutter 1e, shown by a dashed line on the front side in the figure.

The support part 2 supports the component supply TW stored in the chamber 1 before plasma processing. In this embodiment, the support part 2 is a plate-shaped member that is fixed inside the chamber 1 and supports the ring R of the component supply TW via the sheet T. The support part 2 supports the area directly below the ring R located on the outer periphery of the sheet T, and therefore has an open surface on the sheet T opposite the surface to which the wafer W is adhered. In this embodiment, the outer shapes of the ring R and the sheet T are similar and the same size, so the support part 2 supports the ring R via the sheet T. However, if the outer shape of the ring R is larger than the outer shape of the sheet T or if the ring R has radial protrusions, the support part 2 may also support the ring R directly. In other words, it is sufficient if the component supply TW can be supported by supporting the ring R.

More specifically, as shown in FIG. 3(A), the support part 2 consists of a plate-like member 2a and protrusions 2b. The plate-like member 2a is a long, thin plate-like member and is arranged so that its longitudinal direction is parallel to the direction in which the robot hand 191a is inserted into the chamber 1, as shown in FIG. 3(B), for example. The plate-like members 2a are fixed to the bottom surface inside the chamber 1, and two are arranged along the two opposing inner sides of the chamber 1. A plurality of protrusions 2b are provided on the surfaces of the two plate-like members 2a facing each other. A plurality of holes 2c are provided in the plate-like member 2a below the protrusions 2b. For example, a cylindrical heating part 4, described below, is inserted into the holes 2c.

Protrusion 2b is a plate-shaped member that supports ring R of component supply TW via sheet T. Protrusion 2b contacts and supports ring R at two points near the outer edge, leaving the surface of sheet T opposite to the surface to which wafer W is adhered open. As a result, when component supply TW is supported on support part 2, heating part 4, located below protrusion 2b, faces the surface of sheet T opposite to the surface to which wafer W is adhered. Then, within chamber 1, volatile components that evaporate from sheet T and adhesive parts of component supply TW supported on support part 2 are removed.

The exhaust unit 3 exhausts the pressure inside the chamber 1. In this embodiment, the exhaust unit 3 heats the component supply TW before plasma processing within the chamber 1 using the heating unit 4 described below, thereby promoting volatilization from the component supply TW and exhausting and removing the volatilized volatile components. As described below, regardless of whether heating is performed or not, volatilization from the component supply TW can also be promoted and the volatilized volatile components can be exhausted and removed by exposing the component supply TW to a reduced pressure atmosphere created by the exhaust unit 3. The exhaust unit 3 exhausts the volatilized volatile components from the component supply TW before plasma processing within the chamber 1. The exhaust unit 3 has a pressure reducing device 3a, piping 3b, and valve 3c. The pressure reducing device 3a is connected to the exhaust port 1a via piping 3b, which is equipped with a valve 3c. The pressure reducing device 3a is a device that reduces the pressure inside the chamber 1. The pressure reducing device 3a is, for example, a vacuum pump connected to the exhaust line 3d and that evacuates the chamber 1 through the exhaust port 1a. The pressure reducing device 3a also exhausts volatile components that have evaporated from the component supply TW. In other words, by exhausting the chamber 1, the pressure reducing device 3a serves as an exhaust device that removes volatile components from the component supply TW.

(heating section)
The heating unit 4 heats the component supply TW before plasma processing in the chamber 1, thereby promoting the volatilization of volatile components from the component supply TW. In this embodiment, the heating unit 4 is disposed below the support unit 2. As a result, when the component supply TW is supported by the support unit 2, the heating unit 4 faces the surface of the component supply TW opposite to the surface to which the wafer W is adhered. The heating unit 4 is, for example, a heater that generates heat when energized, and multiple cylindrical heaters are arranged. In FIG. 3, the heaters are cylindrical and extend in the left-right direction as viewed in the figure.

The heating temperature of the heating unit 4 is a temperature at which volatile components volatilize from the component supply TW, but which does not cause damage (burning, melting, softening, etc.) to the sheet T or adhesive portion, for example, 40 to 200°C, and preferably 40 to 80°C. This temperature varies depending on the materials of the sheet T and adhesive portion. Therefore, it is preferable to determine this temperature in advance through experiments, etc.

The purge unit 5 opens the depressurized interior of the chamber 1 to the atmosphere. The purge unit 5 has a pipe 5a and a valve 5b. The pipe 5a is connected to the purge hole 1b. A valve 5b is provided at one end of the pipe 5a that connects to the purge hole 1b, and the other end of the pipe 5a is exposed to the outside of the removal device 101. When valve 5b is closed and valve 3c is opened, the depressurization device 3a can evacuate the interior of the chamber 1. When the depressurization device 3a evacuates the interior of the chamber 1, the interior of the chamber 1 is depressurized.

Once the pressure inside chamber 1 has been reduced to a predetermined level, valve 3c is closed and valve 5b is opened, allowing atmospheric air to be introduced through purge hole 1b. Instead of atmospheric air, purge unit 5 may introduce clean dry air (CDA) or an inert gas such as _N2 gas. In this case, a supply unit for supplying CDA or _N2 gas may be connected to the other end of pipe 5a. Introducing an inert gas can prevent oxidation of component supplier TW and components inside chamber 1, which are in a high-temperature state.

(Pressure detector)
The pressure detector 6 is a pressure gauge that detects the pressure inside the chamber 1. The pressure detector 6 is connected to a detection port 1c provided in the chamber 1. The pressure detector 6 is also connected to a control device 200, which will be described later, and the control device 200 controls the exhaust unit 3 (pressure reducing device 3a) and the heating unit 4 in accordance with the pressure detected by the pressure detector 6. For example, the exhaust unit 3 stops exhausting when the pressure detected by the pressure detector 6 reaches a preset pressure. For example, the exhaust unit 3 stops heating when the pressure detected by the pressure detector 6 reaches a preset pressure.

[Plasma processing apparatus]
The plasma processing apparatus 102 is an apparatus (surface processing apparatus) that performs plasma surface treatment of the bonding surfaces of the electronic components E and/or the mounting substrate BW before mounting the electronic components E on the mounting substrate BW. The surface treatment is a process that activates and cleans the surfaces (bonding surfaces) of the component supplier TW and the mounting substrate BW that will be bonded (mounted).

As shown in Figure 4, the plasma processing apparatus 102 of this embodiment includes a chamber 10, which is configured as one of the chambers 11b and is capable of reducing the pressure inside, and is equipped with a stage 20, a gas inlet 30, a plasma generator 40, a mask 50, and an exhaust port 60. The chamber 10 also has a loading/unloading port LN for loading and unloading component suppliers TW and mounting substrates BW, and the loading/unloading port LN is configured to be openable and closable by a shutter SH. The shutter SH is indicated by a dashed line in Figure 4.

(stage)
The stage 20 supports the component supplier TW or the mounting board BW. In this embodiment, the component supplier TW or the mounting board BW is placed on the stage 20 after being carried into the chamber 10 through the loading/unloading port LN, which is opened by opening the shutter SH. The stage 20 in this embodiment is a placement area formed on the inner bottom surface of the chamber 10. In the following description, the direction from the stage 20 to the component supplier TW is referred to as upward or rising, and the direction from the component supplier TW to the stage 20 is referred to as downward or falling.

As shown in FIG. 4, the stage 20 is provided with a drive unit 21 that raises and lowers the component supply unit TW or the mounting board BW. The drive unit 21 has rods 21a, 21b, and a drive mechanism 21c. The rods 21a and 21b are vertical, bar-shaped members that airtightly penetrate the bottom of the chamber 10 and are capable of moving up and down. Multiple rods 21a are arranged in positions that can support the underside of the component supply unit TW, and are rods on which component supply units TW are placed when being loaded into and unloaded from the chamber 10. Multiple rods 21b are arranged in positions that can support the underside of the mounting board BW, and are rods on which mounting boards BW are placed when being loaded into and unloaded from the chamber 10.

The drive mechanism 21c raises and lowers the component supplier TW and the mounting board BW by moving the rods 21a and 21b up and down.

(Gas inlet)
The gas inlet 30 is an opening for introducing a reaction gas into the reduced pressure chamber 10. The gas inlet 30 is provided on the side of the chamber 10 so that the reaction gas can be introduced above the stage 20. A supply device 31 is connected to the gas inlet 30 via a pipe 31 a.

The supply device 31 supplies a reactive gas into the chamber 10 through the gas inlet 30. For example, _N2 gas is used as the reactive gas. By using the reactive gas, it is possible to clean the surface of the object to be processed by removing organic matter, etch an oxide film formed on the surface of the object to be processed, and activate the surface of the object to be processed by terminating it with hydroxyl groups. The reactive gas is also used to purge the chamber 10. Hereinafter, the space into which the reactive gas is introduced will be referred to as a gas space GA.

(Plasma generator)
The plasma generator 40 converts the reactive gas into plasma. This plasma generation generates active species such as ions and radicals. These active species are irradiated onto the surfaces of the component supply body TW and the mounting board BW to activate and clean the respective surfaces. As shown in FIG. 4 , the plasma generator 40 includes an antenna 41, a power supply 42, and a matching box 43. The antenna 41 is provided outside the chamber 10 at a position corresponding to the upper part of the gas space GA. A window member 11d is provided in the chamber 10 between the antenna 41 and the gas space GA. The window member 11d is made of a dielectric material such as quartz. When a high-frequency voltage is applied to the antenna 41, the antenna 41 generates plasma P in the gas space GA through inductive coupling via the window member 11d.

The power supply 42 is connected to the antenna 41 and applies a high-frequency voltage to the antenna 41. The matching box 43 is a matching circuit connected between the power supply 42 and the antenna 41. The matching box 43 stabilizes the discharge of the plasma P by matching the impedance on the input and output sides.

(mask)
4, the mask 50 is provided in the chamber 10. The mask 50 exposes the diced wafers W (electronic components E) of the component supply body TW and covers a portion of the ring R and the sheet T. The mask 50 is arranged so as to surround the periphery of the diced wafers W in the center of the ring R. More specifically, the mask 50 is a ring-shaped member that covers the exposed surface of the sheet T other than the area where the diced wafers W are adhered and the top surface of the ring R.

Multiple support shafts 50a protrude from the bottom of the mask 50 along the inside of the outer periphery of the mask 50. The support shafts 50a are inserted into holes 11e provided in the bottom of the chamber 10 so that they can be raised and lowered. Stoppers 11f are provided on the upper edge of the holes 11e. The stoppers 11f are protrusions formed to restrict the descent of the mask 50 to a predetermined height position. In this embodiment, the stoppers 11f maintain the height of the mask 50 when the mounting board BW is placed on it at the same height as when the mask 50 covers the component supplier TW.

The mask 50 is movable up and down by a drive unit 51. The drive unit 51 has a rod 51a and a drive mechanism 51b. The rod 51a is a vertical, rod-shaped member that airtightly penetrates the bottom of the chamber 10 and is movable up and down.

Multiple rods 51a are arranged in positions where they can support the underside of the mask 50. In this embodiment, three rods 51a protrude through holes 11e and come into contact with three support shafts 50a, respectively. In other words, holes 11e have through-hole portions through which the rods 51a pass. Note that in Figure 4, to make the operation easier to understand, the support shafts 50a and rods 51a are shown, even though they do not appear in the actual cross section. The drive mechanism 51b raises and lowers the mask 50 by moving the rods 51a up and down. In addition, another support shaft is urged downward by a urging member, urging the mask 50 downward.

(exhaust port)
As shown in Fig. 4, the exhaust port 60 is an opening for exhausting gas (e.g., reaction gas) from the chamber 10. In this embodiment, the exhaust port 60 is provided on the side surface of the chamber 10. A pressure reducing device 61 such as a vacuum pump is connected to the exhaust port 60 via a pipe 61a. The pressure reducing device 61 reduces the pressure inside the chamber 10 via the exhaust port 60. The pressure reducing device 61 also exhausts the reaction gas from the chamber 10.

[Supplier Cleaning Device]
The supply body cleaning device 110 is a cleaning device that cleans electronic components E before and/or after plasma processing in the plasma processing device 102. In this embodiment, the supply body cleaning device 110 is a processing chamber that cleans the component supply body TW. The supply body cleaning device 110 performs a cleaning process to clean particles present on the component supply body TW with a liquid such as water. In this embodiment, particles remaining on the plasma-treated component supply body TW or particles generated by the plasma processing are cleaned with cleaning liquid L. The cleaning targets are the surfaces of the electronic components E, the spaces between the electronic components E, and the adhesive surface of the sheet T, and particles adhering to these surfaces are cleaned and removed. As shown in FIG. 5 , the supply body cleaning device 110 includes a cleaning chamber 111 (chamber 11b) that is a container in which the cleaning process is performed, a support unit 112 that supports the component supply body TW, a rotation mechanism 113 that rotates the support unit 112, a cup 114 that receives splashed cleaning liquid L from around the component supply body TW, and a supply unit 115 that supplies the cleaning liquid L.

The cleaning chamber 111 is provided with an opening 111a through which the component supply TW is transported in and out, and the opening 111a is configured to be openable and closable by a shutter 111b. The component supply TW is transported in and out of the cleaning chamber 111 by the transport device 190 through the opening 111a with the shutter 111b open. At this time, the cup 114 is retracted by a lifting mechanism (not shown). The upper surface of the support part 112 is provided with an eccentric pin that rotates and holds the outer edge of the component supply TW. The supply part 115 is provided with a nozzle 115a that drips cleaning liquid L and a movement mechanism 115b that moves the nozzle 115a.

The cleaning process is performed by supplying cleaning liquid L from nozzle 115a to the surface to be treated of component supply body TW, which is held by the eccentric pin of support portion 112 and rotated by rotation mechanism 113. DIW, for example, is used as cleaning liquid L. In this case, hydroxyl groups are imparted to the surfaces of electronic components E in addition to water cleaning.

The rotation mechanism 113 of the supply cleaning device 110 is equipped with an expanding device (not shown). The expanding device stretches (expands) the sheet T of the component supply TW supported by the support portion 112, widening the spaces between the electronic components E. With this configuration, the supply cleaning device 110 can also clean particles that are present in the spaces between the electronic components E.

[Mounted board cleaning equipment]
The mounting substrate cleaning apparatus 120 is a cleaning apparatus that cleans the mounting substrate BW before and/or after the plasma treatment in the plasma processing apparatus 102. The mounting substrate cleaning apparatus 120 of this embodiment is a processing chamber that cleans the mounting substrate BW. The mounting substrate cleaning apparatus 120 performs a cleaning process that cleans particles present on the mounting substrate BW with a liquid such as water. In this embodiment, particles remaining on the plasma-treated mounting substrate BW or particles generated by the plasma treatment are cleaned with a cleaning liquid L. Similar to the supplier cleaning apparatus 110 shown in FIG. 5 , the mounting substrate cleaning apparatus 120 includes a cleaning chamber 111 that is a container that performs the cleaning process therein, a support 112 that supports the mounting substrate BW, a rotation mechanism 113 that rotates the support 112, a cup 114 that receives the cleaning liquid L that splashes from around the mounting substrate BW, and a supply unit 115 that supplies the cleaning liquid L. When, for example, DIW is used as the cleaning liquid L, hydroxyl groups are added to the surface of the mounting substrate BW in addition to the water cleaning.

[Conditioning Processing Device]
The adjustment processing device 130 adjusts the sheet T of the component supply unit TW after cleaning by irradiating it with UV light, thereby reducing the adhesive strength of the sheet T. As shown in FIG. 1 , the adjustment processing device 130 has an irradiation device 131 that irradiates the entire area below the stored component supply unit TW with UV light by scanning a UV light source.

[Gauging device]
The gauging device 140 positions the component supply unit TW. The gauging device 140 is a contact-type centering device that adjusts the position by contacting the outer periphery of the component supply unit TW so that the center of the component supply unit TW coincides with a reference position set inside the gauging device 140.

[Alignment device]
The alignment device 150 positions the mounting substrate BW. The alignment device 150 is a non-contact (optical) centering device that adjusts the position of the mounting substrate BW so that the center of the mounting substrate BW coincides with a reference position provided inside.

[Supplier Buffer Device]
The supply buffer device 160 temporarily stores the component supplies TW before they are carried into the bonding device 180. As shown in FIG. 1 , the supply buffer device 160 has a storehouse 161 that can store a plurality of component supplies TW stacked at intervals.

[Mounted board buffer device]
The mounted substrate buffer device 170 temporarily stores the mounted substrates BW before they are carried into the bonding device 180. The mounted substrate buffer device 170 has a storehouse 171 that can store a plurality of mounted substrates BW stacked at intervals.

[Bonding equipment]
The bonding apparatus 180 is included in the mounting section Y and is a processing chamber that detaches electronic components E from the component supply body TW that has been processed by the plasma processing apparatus 102 and mounts them on a mounting substrate BW. The bonding apparatus 180 includes a supply mechanism, a pickup mechanism, and a mounting mechanism, all of which are not shown. The bonding apparatus 180 uses the pickup mechanism to pick up electronic components E from the component supply body TW that has been carried into the supply mechanism by the transport device 190, and transfers them to the mounting mechanism. The mounting mechanism then mounts the electronic components E on the mounting substrate BW that has been carried into the bonding apparatus 180 by the transport device 190. As shown in FIG. 1 , the bonding apparatus 180 of this embodiment flips over the picked-up electronic components E and mounts the pre-mounted surface on the surface of the mounting substrate BW that has also been subjected to the pre-mounting process.

[Transportation device]
The transport device 190 transports component supply items TW and mounting boards BW between the load port 11c and each chamber 11b, between each chamber 11b, and between the supply item buffer device 160, the mounting board buffer device 170, and the bonding device 180. In other words, transport by the transport device 190 also includes transporting component supply items TW and mounting boards BW between the pre-mounting processing unit X and the mounting unit Y. As shown in FIG. 2 , the transport device 190 has a transport robot 191 and a movement mechanism 192. The transport robot 191 is of a double-arm type, and a pair of robot hands 191a support the component supply items TW and mounting boards BW, respectively. The movement mechanism 192 moves the transport robot 191 and positions it relative to the load port 11c, each chamber 11b, and the bonding device 180. The robot hand 191 a carries in and out the component supply bodies TW and the mounting boards BW to and from each transport container F, each chamber 11 b and the bonding device 180 .

[Control device]
The control device 200 is a computer that controls each part of the mounting system 100. The control device 200 has a processor that executes programs, a memory that stores various information such as the programs and operating conditions, and a drive circuit that drives each element. That is, the control device 200 controls the removal device 101, the plasma processing device 102, the supply item cleaning device 110, the mounting substrate cleaning device 120, the adjustment processing device 130, the gauging device 140, the alignment device 150, the supply item buffer device 160, the mounting substrate buffer device 170, the bonding device 180, and the transport device 190. That is, the control device 200 is also a computer that controls each part of the mounting pre-processing unit X and the mounting unit Y.

[Causes of reduced bonding strength]
In direct bonding, in which electronic component E is directly bonded to a substrate without using bonding materials such as solder bumps, there have been cases where the bond strength has decreased. There are various factors that affect bond strength, but one of the factors that causes the decrease in bond strength is thought to be insufficient pre-processing before mounting. In other words, it is thought that factors that inhibit bonding remain on the bonding surface between the electronic component and the mounting substrate.

We therefore investigated factors in the pre-processing, particularly the effects of plasma processing. As a result, we discovered that there was a difference in the pressure changes during plasma processing between when plasma processing component supply bodies TW and when plasma processing mounting boards BW. When plasma processing component supply bodies TW, pressure fluctuations occurred at the end of the plasma surface processing that were not seen when plasma processing mounting boards BW.

Figure 6 shows an example of the change in pressure during depressurization inside the chamber 10. Figure 6 is a graph with pressure on the vertical axis and time on the horizontal axis. Surface treatment using plasma is performed in a depressurized atmosphere. Therefore, the pressure inside the chamber 10 is first reduced, and when a predetermined pressure is reached, surface treatment using plasma begins. In this embodiment, this predetermined pressure is called the base pressure.

Figure 6(A) shows the pressure change (progression) within the chamber 10 when a component supply TW is plasma-treated in the plasma processing device 102. As shown in Figure 6(A), when the pressure within the chamber 10 is reduced to the base pressure, a reactive gas to be converted into plasma is introduced into the chamber 10. By introducing the reactive gas, the pressure within the chamber 10 rises to the surface treatment pressure.

Then, due to the balance between exhaust and introduction, the surface treatment pressure is maintained constant, as shown by the almost horizontal straight line in Figure 6 (A). In this state, power is applied to the reactive gas to convert it into plasma. The activated species generated by converting the reactive gas into plasma perform surface treatment on the component supply body TW carried into the plasma treatment device 102. After the predetermined treatment time t0 has elapsed, the plasma surface treatment is completed. The supply of reactive gas is stopped, and the application of power is stopped. Then, the pressure inside chamber 10 decreases due to continued exhaust. Thereafter, exhaust is stopped and atmospheric air is introduced, raising the pressure inside chamber 10 to atmospheric pressure. This completes the plasma treatment.

The pressure fluctuations observed at the end of the surface treatment of the component supplier TW mentioned above are shown circled in Figure 6(A). This fluctuation in surface treatment pressure was not observed when surface treating the mounting board BW. The inventors of the present application focused on the change in amplitude due to increases and decreases in pressure during this surface treatment.

The component supply TW and the mounting board BW have different configurations. The component supply TW is made up of a sheet T attached to a ring R, with diced wafers (semiconductor wafers) W adhered to it. In contrast, the mounting board BW is a substrate consisting of only semiconductor wafers. The difference between the two is the presence or absence of the sheet T. Therefore, it was inferred that the pressure fluctuations during surface treatment of the component supply TW were caused by the sheet T.

The adhesive portion of the sheet T holds the electronic component E and is made of a material that loses its adhesiveness when the electronic component E is peeled off during mounting. Such materials are made of curable resins such as UV-curable resins and thermosetting resins. During mounting, the resin is cured to lose its adhesiveness just before the electronic component E is peeled off from the sheet T. Therefore, until then, the resin remains in an uncured state in order to hold the electronic component E in place. Water easily dissolves in uncured resin. Furthermore, the sheet T itself is made of resin and absorbs moisture.

When a component supply TW having such components is subjected to plasma treatment, first, as the pressure is reduced, volatile components such as the highly volatile adhesive portions, moisture absorbed by the sheet T, moisture dissolved in the resin, and solvent components begin to volatilize. When plasma surface treatment begins, the heat of the plasma causes the temperature of the component supply TW to rise. This gradually increases the temperature of the sheet T being surface treated and the curable resin that makes up the adhesive portions on its surface, and further causes the moisture absorbed by the sheet T, the moisture and solvent components dissolved in the resin, and the resin components themselves to volatilize as gas. Therefore, it is thought that after a certain amount of surface treatment time has passed, pressure fluctuations will occur due to the volatile gas (volatile components).

Furthermore, when evaporation occurs from the sheet T or the adhesive curable resin, the temperature drops due to the heat of vaporization, causing the evaporation to stop. Once evaporation stops, it begins again due to the heat of the plasma. It can be assumed that this repetition causes the observed oscillatory pressure fluctuations.

Volatile components that volatilize from the resin sheet T and adhesive portions of the component supply TW generally contain carbon. Substances with small molecular weights are more likely to volatilize. It is believed that when volatile components containing small molecular weight carbon volatilize from the component supply TW during plasma surface treatment, they are absorbed into the plasma atmosphere and ionized. The ionized volatile components collide with and react with a portion of the surface of the electronic component E. It is believed that compounds or carbon-containing functional groups are formed on the portion of the surface of the electronic component E that reacts with the ionized volatile components, rendering that portion inactive. These compounds or carbon-containing functional groups cannot be removed even by cleaning with the supply cleaning device 110. This can be thought to result in a decrease in the bonding strength at the bonding surface between the component supply TW and the mounting board BW.

In other words, a decrease in bonding strength can be attributed to a variety of factors. One factor is when the surface treatment of the component supply body TW with plasma is insufficient, which is thought to be due to volatiles evaporating from the sheet T or adhesive portion. Situations that cause such a decrease in bonding strength can be considered a defect in the pre-mounting process. They can also be considered a defect in the mounting process.

In Figure 6(B), the dashed line shows the change in pressure when an empty chamber 10 is evacuated and depressurized in the same manner as plasma processing, and the dashed line shows the change in pressure when a component supply TW is placed in the chamber 10 and the chamber is evacuated and depressurized in the same manner without performing surface processing. Although not shown for ease of viewing, the change in pressure when a mounting board BW is placed in the chamber 10 and the pressure is similarly depressurized is the same as when the chamber 10 is empty. In other words, it is the same as the change shown by the dashed line.

As shown in Figure 6(B), because evacuation continues without performing surface treatment, the pressure in both the component supplier TW and the mounting board BW exceeds the base pressure and continues to decrease. Furthermore, while the pressure changes in the mounting board BW match those when the chamber 10 is empty, the pressure changes in the component supplier TW and the mounting board BW do not match.

For the same amount of time after elapsed since the start of evacuation, the pressure in chamber 10 housing the component supply TW is always higher than that in chamber 10 housing the mounting board BW. This can be explained by considering that volatile components are volatilizing from the component supply TW, as mentioned above. In other words, as the pressure is reduced, evaporation occurs from the component supply TW, and this evaporation causes the pressure to rise. It can be inferred that the pressure increases by the amount of evaporation because the evaporation pressure is added to the pressure reduction pressure. In the case of Figure 6(B), the pressure difference is large near the base pressure. This indicates that the amount of evaporation from the component supply TW increases near the base pressure. This is thought to be because in pressure areas higher than the base pressure, relatively volatile components volatilize, while at pressures lower than the base pressure, the evaporation of less volatile components is also added.

[Eliminating factors that inhibit bonding]
From the above observations and inferences, it can be seen that, in order to eliminate one of the factors inhibiting bonding, it is sufficient to remove volatile components from the component supply TW in advance before performing surface treatment. Therefore, in the mounting system 100 of this embodiment, the removal device 101 removes volatile components from the component supply TW before activating and cleaning the surfaces of the electronic components E in the plasma treatment device 102 of the pre-mounting treatment device 300. Furthermore, in the removal device 101 of this embodiment, the heating unit 4 heats the component supply TW in the reduced-pressure chamber 1 to promote volatilization of the volatile components from the component supply TW.

In other words, to prevent unnecessary components from volatilizing during plasma surface treatment, the amount of volatile components generated from the component supply TW is reduced before surface treatment to a level that does not affect the bond strength. In other words, it is not necessary to remove all of the volatile components. This is called a removal process. "Doing not affect the bond strength" here means that the bond strength at the bonding surface between the component supply TW and the mounting board BW does not decrease below the required predetermined strength. The predetermined strength refers to the bond strength obtained when, after temporary bonding in the mounting process, annealing is performed, and the bonding surfaces between the component supply TW and the mounting board BW are finally converted to covalent bonds via oxygen atoms, resulting in a nearly integrated bond. The relationship between such bond strength and the amount of volatilization can be confirmed and determined in advance through experiments, etc. The amount of volatilization can be monitored by the pressure inside chamber 1, as explained below.

Figure 6(C) shows an example of pressure changes during decompression in chamber 1 of the removal apparatus 101 of this embodiment. The dashed line in the graph of Figure 6(C), like Figure 6(B), shows the pressure changes during decompression in an empty chamber 1. Therefore, it shows the pressure changes when there is no component supply TW in chamber 1 and no volatilizable components. The dashed line in the graph of Figure 6(C), also like Figure 6(B), shows the pressure changes when there is a component supply TW in chamber 1 and volatilizable components are present. The solid line in the graph of Figure 6(C) shows the pressure changes when there is a component supply TW in chamber 1 (and volatilizable components are present) and heating is being performed by the heating unit 4 to further promote volatilization. Note that the exhaust volume is constant in all states. Chamber 1 of the removal apparatus 101 and chamber 10 of the plasma processing apparatus 102 have the same chamber volume and exhaust volume.

As shown in Figure 6 (C), in either case, the pressure inside chamber 1 drops rapidly from the start of decompression and gradually reaches a constant pressure. As shown by the dashed and solid lines, when volatile components such as component supply TW are present, once the pressure inside chamber 1 is reduced to around 4000 Pa, the pressure drop becomes more gradual compared to when it is empty (dash-dotted line), and slight fluctuations in pressure occur. This is thought to be mainly due to the moisture adsorbed to sheet T and adhesive portions beginning to evaporate. As a result, the pressure inside chamber 1 drops as the moisture evaporates. This condition is also the same when plasma processing is performed on component supply TW in plasma processing device 102.

As shown by the solid line in the graph in Figure 6 (C), when heating is performed, the pressure drops more slowly than when the container is empty (dash-dotted line). This is thought to be because heating causes the water to evaporate more rapidly. Of course, it is not just water that evaporates; it is also possible that volatile components such as solvents in the resin components may also evaporate.

As shown by the dashed and solid lines in the graph in Figure 6 (C), when there is a component supply TW in chamber 1, i.e., when volatile components are present, there comes a period when the pressure drop becomes more gradual as the pressure is reduced. During this period, the pressure fluctuates oscillates. This tendency is more pronounced when heating is performed than when heating is not performed. As the pressure drops, it is thought that the pressure drop becomes slower because a larger amount of less volatile components volatilize. This evaporation is thought to be due to an increase in evaporation from the sheet T and the adhesive portions on its surface. The adhesive portions are uncured curable resin, and it is thought that the air and moisture trapped inside them come out of the resin, and that the solvent components and the resin itself also volatilize.

Here, the reason why the pressure decreases more slowly while volatile components continue to volatilize from the component supply body TW than when this volatilization does not occur will be explained using the following formula: If the pressure inside the chamber 1 is P, the amount of minute gas flowing into the chamber 1 (leakage amount) is Le, the amount of volatile components volatilized from the component supply body TW is Vo, and the exhaust volume of the pressure reducing device 61 (exhaust device) is Ex, the relationship in formula (1) below is established.
P=Le+Vo-Ex (1)
If no volatile components have evaporated from the component supply TW, then P = Le - Ex, and the pressure becomes constant when Le and Ex are balanced. If volatile components have evaporated, then the pressure in chamber 1 will be higher than normal by Vo, as shown in equation (1).

The amount of Vo repeatedly increases and decreases due to the interaction of the following four events.
(a) As the pressure in the chamber 1 decreases, the boiling point also decreases.
(b) The boiling point varies depending on the volatile components.
(c) When the volatile component evaporates, it absorbs heat of vaporization from the surroundings (for example, the sheet T or the adhesive portion), thereby lowering the surrounding temperature.
(d) Even among the same components, some are easily volatilized and some are difficult to volatilize (for example, volatile components adsorbed on the surface or adhesive portion of the sheet T are easily volatilized, while volatile components adsorbed inside the sheet T or adhesive portion are difficult to volatilize). Therefore, when the inflow amount Le and the exhaust amount Ex are constant, P changes with a change in Vo.

Specifically, due to event (a), the pressure inside Chamber 1 decreases, which lowers the boiling point of the volatile components, causing them to begin volatilizing. However, due to event (c), the temperature of Sheet T and the adhesive portion decreases, causing the temperature of the volatile components to also decrease. As a result, the temperature of the volatile components drops below the lowered boiling point as the pressure drops, and evaporation stops. However, as the pressure inside Chamber 1 decreases further, event (a) occurs again, causing the boiling point of the volatile components to decrease further, causing them to begin volatilizing again. This cycle repeats, causing the amount of Vo to repeatedly increase and decrease. Furthermore, due to the interaction of events (b) and (d), different volatile components will repeatedly start and stop volatilizing within a certain pressure range. As a result, the amount of Vo will increase and decrease in an even more complex manner.

In addition, during plasma processing in the plasma processing device 102, when a reactive gas is introduced for plasma surface processing, the pressure inside the chamber 10 rises, causing the boiling point of the volatile components to rise as well, temporarily halting their volatilization. The component supply TW is then heated by the heat of the plasma, and volatilization occurs when the boiling point of the volatile components is exceeded.

As the evaporation of volatile components progresses, the amount of evaporation decreases or disappears, and as exhaust progresses, the rate of pressure drop increases again. The dashed and solid lines in Figure 6(C) show that the pressure line is nearly horizontal, the pressure drop is slow, and after an oscillatory pressure change, the slope of the pressure drop becomes steep. At the point when this slope becomes steep, it can be said that the evaporation of volatile components has almost ceased. In other words, at this point, the volatile components have been removed from the parts supplier TW.

In other words, before performing surface treatment using plasma, the component supply body TW can be exposed to a reduced pressure atmosphere or further heated to promote the evaporation of volatile components, thereby performing a removal treatment to remove the volatile components in advance.

From the above, in the removal device 101 containing the component supply TW, when the pressure inside the chamber 1 is reduced, the rate of pressure decrease slows down and then increases, at which point it is determined that volatilization from the component supply TW has ceased, i.e., the volatile components have been removed. By then performing surface treatment using plasma, it is possible to prevent reactions that inhibit bonding from occurring during surface treatment.

However, if the removal process is insufficient, unnecessary components will volatilize during plasma surface treatment, affecting bond strength, while excessive removal will result in reduced productivity. Therefore, it is necessary to properly control the end point (endpoint) of the removal process. In other words, the end point of the removal process is the point at which the amount of volatile components volatilizing from the component supplier TW has decreased to a level that does not affect bond strength.

In order to quickly reduce the amount of volatile components volatilizing from the component supply TW to a level that does not affect the bonding strength, the volatilization of the volatile components is promoted. For this reason, in the removal device 101, the component supply TW is exposed to a reduced pressure atmosphere before surface treatment, or is heated while exposed to a reduced pressure atmosphere.

When heating is performed while reducing pressure in the removal device 101, the pressure within chamber 1 changes as shown by the solid line in the graph of Figure 6 (C). As the pressure decreases, moisture first evaporates from the sheet T and the adhesive portions on its surface. Therefore, at the same exhaust volume as when no volatile components are present, as shown by the dotted line in Figure 6 (C), the pressure decreases more slowly than when no volatile components are present. After and/or simultaneously with the moisture evaporation, evaporation occurs mainly from the adhesive portions. Then, due to the increase in the amount of evaporation, the pressure decrease becomes even more gradual, and a period of time occurs in which the amplitude of the pressure increase and decrease becomes more severe. After this period in which the slope of the pressure change becomes smaller and the amplitude becomes more severe, a period of time comes in which the amplitude of the pressure increase and decrease becomes smaller, and the pressure suddenly decreases. This indicates that evaporation from the component supply TW has ended. In this way, the point at which the slope of the pressure change changes is considered to be the end point (endpoint) of the removal process. Furthermore, the pressure inside chamber 1 at time t1 from the start of depressurization at this endpoint is designated as pressure Ep1, and is shown by the white circle in Figure 6(C).

In the removal device 101, the control device 200 of this embodiment stops heating in the heating unit 4 and ends the removal process when the pressure inside the chamber 1 detected by the pressure detector 6 reaches a preset pressure. The preset pressure here can be the endpoint pressure Ep1 described above. This pressure is, for example, 3 to 50 Pa and is set in advance in the memory of the control device 200.

When the removal device 101 is only exposed to a reduced pressure atmosphere without heating, the pressure inside the chamber 1 changes as shown by the dashed line in the graph of Figure 6 (C). As the pressure drops, moisture volatilizes. For this reason, at the same exhaust volume as when no volatilizable components are present (shown by the dashed line), the pressure drops more slowly than when no volatilizable components are present. However, the amount of volatilization per unit time is smaller and the pressure drops more quickly compared to when heating is involved.

Following and/or simultaneously with the evaporation of moisture, evaporation occurs from volatile components derived from the sheet T and adhesive portion. This causes a period of time during which the pressure decrease slows due to the increase in the amount of evaporation, and the amplitude of the pressure increase and decrease becomes more pronounced. After a period during which the amplitude of this pressure change becomes more pronounced and the slope becomes smaller, a period of time comes when the amplitude of the pressure increase and decrease becomes smaller and the pressure decrease becomes more rapid. In this case, too, the point at which the slope of the pressure change changes (time t2 from the start of pressure reduction) is set as the endpoint, and the pressure Ep2 at that point is shown by a white circle in Figure 6 (C). The pressure Ep2 is, for example, 0.01 to 10 Pa. The pressure Ep2 can be stored in the memory of the control device 200 as a set pressure.

In this case, the removal device 101 may have a structure similar to that shown in FIG. 3, but without the heating unit 4. The control device 200 controls the pressure reduction device 3a of the discharge unit 3 according to the pressure detected by the pressure detector 6. The discharge unit 3 stops exhausting using the pressure reduction device 3a when the pressure detected by the pressure detector 6 reaches a preset pressure. Alternatively, the discharge unit 3 stops exhausting using the pressure reduction device 3a when the rate of decrease in the pressure detected by the pressure detector 6 decreases from immediately after exhausting and then begins to increase. During the decompression, volatile components that have evaporated from the component supply TW that has been brought into the chamber 1 and supported by the support unit 2 are exhausted by the pressure reduction device 3a.

[Operation]
The operation of the mounting system 100 of this embodiment as described above will be described with reference to the flowchart of Fig. 7 in addition to the aforementioned Figs. 1 to 6. A mounting method for mounting an electronic component E on a mounting board BW according to the following procedure is also one aspect of this embodiment. Note that the following description follows the flowchart of Fig. 7, but it also includes a state in which each process is performed simultaneously in parallel.

As shown in FIG. 2, a transport container F containing a component supply TW and a transport container F containing a mounting board BW are mounted on the load port 11c. The transport robot 191 receives the component supply TW from the transport container F on the load port 11c and transports the component supply TW to the removal device 101.

The removal device 101 removes volatile components that have evaporated from the adhesive portions and sheet T on the component supply TW (volatile component removal process: step S100). First, the shutter 1e of the chamber 1 opens, and the robot hand 191a of the transport robot 191 supporting the component supply TW is inserted through the loading/unloading entrance 1d. The robot hand 191a places the component supply TW on the support unit 2 (see Figure 3). With the shutter 1e closed and the valve 5b closed, the pressure reducing device 3a begins evacuating. The heating unit 4 also begins heating. As a result, the component supply TW is heated while the pressure inside the chamber 1 is reduced, and the volatile components volatilize from the component supply TW. When the pressure detected by the pressure detector 6 reaches the set pressure, the heating unit 4 stops heating.

Furthermore, valve 3c is closed to stop the exhaust of gas from inside chamber 1 by pressure reducing device 3a. Valve 5b is then opened, opening the decompressed interior of chamber 1 to the atmosphere. Shutter 1e opens, and the robot hand 191a of the transfer robot 191 is inserted through the transfer port 1d and receives the component supply TW supported by the support part 2. After the robot hand 191a transfers the component supply TW out of chamber 1 through the transfer port 1d, shutter 1e closes. Thereafter, the robot hand 191a passes the component supply TW to the plasma processing device 102.

The plasma processing device 102 activates and cleans the surfaces of the electronic components E through plasma surface treatment (supply body surface treatment process: step S101). First, the drive unit 51 raises the rod 51a, raising the mask 50 against the biasing force of the biasing member. By raising the mask 50, the mask 50 is retracted so as not to obstruct the entry of the robot hand 191a of the transport robot 191 into the chamber 10. Next, the shutter SH opens, and the robot hand 191a of the transport robot 191 supporting the component supply body TW is inserted through the loading/unloading entrance LN. The robot hand 191a positions the component supply body TW above the rod 21a.

The drive mechanism 21c raises the rod 21a, lifting the component supply TW from the robot hand 191a, and the robot hand 191a retracts. After the robot hand 191a retracts, the shutter SH closes. The pressure reducing device 61 then evacuates the chamber 10 to create a vacuum.

The drive mechanism 21c lowers the rod 21a, placing the component supply TW on the stage 20. Furthermore, the drive unit 51 lowers the rod 51a, causing the mask 50 to be lowered by the biasing force of the biasing member. The mask 50 then comes into contact with the ring R and stops. As a result, the mask 50 covers the ring R and the sheet T.

In this state, as shown in FIG. 4, the supply device 31 supplies reactive gas to the gas space GA, and the power supply 42 applies high-frequency power to the antenna 41, generating plasma P in the gas space GA. The reactive gas is converted into plasma, generating active species such as ions and radicals, which activate and clean the surfaces of the electronic components E. The reactive gas is exhausted from the exhaust port 60 by the pressure reducing device 61. Active species that attempt to move toward the outer periphery of the wafer W, i.e., the area between the ring R and the electronic components E, are prevented from contacting the exposed surfaces of the ring R and the sheet T by the mask 50 (as indicated by the arrows in the figure). Therefore, etching of the exposed surfaces of the ring R and the sheet T by the active species can be prevented. When the control device 200 determines that the surface treatment time (t0) has elapsed, it terminates the plasma surface treatment. In this way, the plasma processing device 102 activates and cleans the surfaces of the component supply body TW through surface treatment (supply body surface treatment process: step S101).

After surface treatment of the component supply TW, the drive unit 51 raises the rod 51a. The drive unit 51 raises the mask 50 against the biasing force of the biasing member, separating the mask 50 from the ring R. The drive mechanism 21c raises the rod 21a, thereby lifting the component supply TW. The shutter SH opens, and the robot hand 191a is inserted through the loading/unloading opening LN. The drive mechanism 21c lowers the rod 21a, and the component supply TW is placed on one of the double-armed robot hands 191a for delivery. The robot hand 191a then carries the component supply TW out through the loading/unloading opening LN.

While the surface treatment of the component supply TW is being performed, the transfer robot 191 receives the mounting substrate BW from the transfer container F onto the other robot hand 191a of the double arm. The transfer robot 191 receives the component supply TW from the rod 21a of the plasma processing device 102 and transfers the mounting substrate BW to the plasma processing device 102. The plasma processing device 102 activates and cleans the surface of the mounting substrate BW by performing surface treatment using plasma (mounting substrate surface treatment process: step S102).

The procedure for plasma treatment of the mounting substrate BW is the same as the supplier surface treatment process described above. However, in the case of the mounting substrate BW, the volatile component removal process is not performed, and only the plasma surface treatment is performed.

The transport robot 191 delivers the surface-treated component supply TW to the support section 112 of the supply cleaning device 110. The supply cleaning device 110 rotates the surface-treated component supply TW delivered to the support section 112 using the support section 112 and the rotation mechanism 113 while supplying cleaning liquid L to the component supply TW. In this manner, the component supply TW is cleaned (supply cleaning process: step S103). This removes particles generated by the etching action of the plasma surface treatment. At this time, the sheet T of the supply cleaning device 110 is expanded by the expanding device, and the electronic components E are cleaned with the spacing between them widened. After cleaning by supplying cleaning liquid L, the sheet is rotated at high speed to shake off the cleaning liquid L and dry. After drying, the rotation of the support section 112 is stopped, and the expanding device releases the sheet T, causing it to contract to its original state, restoring the spacing between the electronic components E to its original state.

After completing surface treatment of the mounting substrate BW in the plasma processing device 102, the transfer robot 191 receives the mounting substrate BW from the plasma processing device 102. The transfer robot 191 hands the received mounting substrate BW to the mounting substrate cleaning device 120. The mounting substrate cleaning device 120 supplies cleaning liquid L to the mounting substrate BW while rotating the mounting substrate BW. In this manner, the mounting substrate BW is cleaned (mounting substrate cleaning process: step S104). After supplying and cleaning with cleaning liquid L, the mounting substrate BW is dried by rotating at high speed to shake off the cleaning liquid L. This mounting substrate cleaning process includes a state in which it is performed simultaneously with the supplier cleaning process. In other words, the time spent cleaning the component supplier TW and the time spent cleaning the mounting substrate BW overlap.

After the cleaning process for the component supply TW is complete, the transport robot 191 receives the component supply TW from the supply cleaning device 110 and hands it over to the gauging device 140. The gauging device 140 aligns the component supply TW (positioning process: step S105). After alignment is complete, the transport robot 191 receives the component supply TW from the gauging device 140 and hands it over to the adjustment processing device 130. The adjustment processing device 130 performs an adjustment process to reduce the adhesive strength of the sheet T by irradiating the component supply TW with UV light (adjustment process: step S106). These positioning and adjustment processes overlap with the mounting substrate cleaning process.

After the cleaning process for the mounting substrate BW is completed, the transfer robot 191 receives the mounting substrate BW from the mounting substrate cleaning device 120 and hands it over to the alignment device 150. The alignment device 150 aligns the mounting substrate BW (positioning process: step S107).

After the adjustment process is complete, the transport robot 191 receives the component supply TW from the adjustment processing device 130 and hands it over to the supply buffer device 160. After the alignment of the mounting board BW is complete, the transport robot 191 receives the mounting board BW from the alignment device 150 and hands it over to the mounting board buffer device 170.

In this way, the component supply TW and mounting board BW are stored in the supply buffer unit 160 and mounting board buffer unit 170 (storage process: step S108). After storing the component supply TW and mounting board BW, when the bonding unit 180 is ready to accept them, the transport robot 191 receives them and hands them over to the bonding unit 180. In other words, in response to a signal from the bonding unit 180 indicating that processing is complete and the bonding unit 180 is ready to accept them, the transport robot 191 removes the component supply TW and mounting board BW from the supply buffer unit 160 and mounting board buffer unit 170. The transport robot 191 then carries the component supply TW and mounting board BW into the bonding unit 180. In the bonding unit 180, electronic components E are picked up from the component supply TW and mounted on the mounting board BW (mounting process: step S109).

[effect]
(1) The pre-mounting treatment device 300 of this embodiment is a pre-mounting treatment device 300 that performs pre-mounting treatment of the bonding surfaces of the electronic component E and the mounting substrate BW before mounting the electronic component E on the mounting substrate BW, and includes: a plasma treatment device 102 that performs surface treatment using plasma on the bonding surfaces of the electronic component E and/or the mounting substrate BW; a cleaning device that cleans the electronic component E and/or the mounting substrate BW before and/or after the plasma treatment in the plasma treatment device 102; and a removal device 101 that promotes volatilization of volatile components from a component supply TW in which a sheet T having an adhesive portion on its surface is supported by a ring R and to which electronic components E are adhered before the plasma treatment in the plasma treatment device 102, thereby removing the volatile components.

The mounting system 100 of this embodiment includes a pre-mounting processing device 300 and a bonding device 180 that removes electronic components E processed by the pre-mounting processing device 300 from the component supplier TW and mounts them on a mounting board BW.

The pre-mounting treatment method of this embodiment is a method for performing pre-mounting treatment of the bonding surfaces of electronic components E and mounting substrate BW before mounting the electronic components E on the mounting substrate BW. It includes a plasma surface treatment of the bonding surfaces of the electronic components E and/or mounting substrate BW, a cleaning treatment for cleaning the electronic components E and/or mounting substrate BW before and/or after the surface treatment, and a component supply TW in which a sheet T having an adhesive portion on its surface is supported by a ring R and to which electronic components E are adhered, promoting the evaporation of volatile components and removing the volatile components before the surface treatment.

As a result, volatile components can be discharged from the component supply body TW before plasma treatment. In particular, volatile components can be discharged from the sheet T having an adhesive portion. This reduces the amount of volatile components volatilizing from the component supply body TW during plasma surface treatment. Therefore, it is possible to prevent volatile components volatilizing from the component supply body TW from bonding to the surface of the electronic component E on the component supply body TW as compounds or carbon-containing functional groups. In other words, the active and clean state of the surface of the electronic component E is not contaminated by volatile components volatilizing from the sheet T or adhesive portion. Therefore, it is possible to prevent a decrease in the bonding strength at the bonding surface between the component supply body TW and the mounting board BW.

Furthermore, volatile components volatilizing from the component supply TW can be removed in chamber 1 of the removal device 101, which is separate from the plasma processing device 102. This configuration prevents the interior of the plasma processing device 102 from being contaminated by volatile components volatilizing from the component supply TW.

(2) The removal device 101 has a chamber 1 that stores the component supply TW, an exhaust section 3 that evacuates the chamber 1, and a heating section 4 that heats the component supply TW. By heating the component supply TW in the chamber 1 using the heating section 4, volatilization from the component supply TW is promoted, and the volatilized volatile components are discharged and removed by the exhaust section 3.

In this way, by heating in a reduced pressure atmosphere before performing plasma treatment, volatile components can be evaporated more quickly from the component supply TW. This shortens the pre-treatment time and enables high-speed mounting.

As is clear from Figure 6 (C), when heating is performed while reducing pressure in the removal device 101, the evaporation of volatile components is promoted, so the endpoint is reached earlier. In other words, the removal process can be carried out reliably and quickly.

(3) The removal device 101 has a pressure detector 6 that detects the pressure inside the chamber 1, and the heating unit 4 stops heating when the pressure detected by the pressure detector 6 reaches a preset pressure. The pressure inside the evacuated chamber 1 is affected by volatilization from the component supplier TW inside the chamber 1. When volatile components volatilize from the component supplier TW into the evacuated chamber 1, the rate at which the pressure inside the chamber 1 decreases slows. As volatilization progresses and the amount of volatilization decreases, the rate at which the pressure decreases increases. In this way, the state of pressure drop due to exhaust inside the chamber 1 changes depending on the state of volatilization from the component supplier TW, and a point in time (endpoint) occurs at which the slope of the pressure change switches.

In this case, a decrease in the amount of evaporation means that the volatile components have been removed from the component supply TW. Therefore, the endpoint can be said to be the pressure at which the evaporation time for the volatile components can be secured. In other words, by observing the pressure change inside the chamber 1 with the pressure detector 6, it is possible to detect (determine) whether the volatile components have been removed and whether the evaporation time for evaporation has been secured. Therefore, the component supply TW can be placed in a state where the volatile components have been removed, at least to the extent that no problems occur during the mounting process.

Furthermore, by setting the endpoint pressure to a set pressure while heating under reduced pressure, the timing to stop heating can be set. If the volatile components are not sufficiently removed, unnecessary components will volatilize during plasma processing, affecting bonding strength. If the removal process is excessive, productivity will decrease. By properly controlling the end point (endpoint) of the removal process, the necessary volatile components can be reliably removed and productivity can be increased.

(4) The mounting pre-treatment unit X has a plasma treatment unit 102, which has a stage 20 on which the component supply unit TW is placed, a chamber 10 capable of reducing the pressure inside, a plasma generator 40 that generates activated species by converting a reactive gas into plasma, and a mask 50 that is provided within the chamber 10 and exposes the wafer W while covering a portion of the ring R and the sheet T.

As a result, etching of exposed portions of the ring R and sheet T can be prevented. After a certain amount of volatile components is removed from the component supply TW in the removal device 101, the surface of the electronic component E is activated and cleaned by the plasma treatment device 102. In this way, a decrease in the bonding strength at the bonding surface between the component supply TW and the mounting board BW can be prevented.

Furthermore, it is now possible to achieve narrow spacing between connection terminals, which was previously impossible due to contact between bonding materials made of bumps of solder, gold, copper, aluminum, etc. on the connection terminals, making it possible to create a high-density package.

[Modification]
The pre-mounting processing device 300, which is the pre-mounting processing unit X of this embodiment, and the mounting system 100 can also be configured in the following modified examples.

(1) As shown in FIG. 8 , the removal device 101 of this embodiment may be provided with a component detector 7 that detects the amount of a specific component in the gas within the chamber 1. In this case, the component detector 7 detects the amount of volatile components volatilized from the component supply TW as the amount of the specific component. The heating unit 4 stops heating and/or evacuation when the amount of the specific component detected by the component detector 7 or the change in the amount of the specific component becomes equal to or less than a predetermined set amount. In other words, when the amount of the specific component or the change in the amount of the specific component becomes equal to or less than a predetermined set amount (endpoint), the control device 200 determines that the volatilization time has been secured, and stops heating by the heating unit 4 and/or stops evacuation by the evacuation unit 3.

More specifically, the component detector 7 is a quadrupole mass spectrometer (Q-mass) that detects components through a detection port 1c formed in the chamber 1. The component detector 7 ionizes the gas present in the chamber 1 and separates and measures the generated ions based on their mass. In other words, the component detector 7 analyzes the mass of ions generated from the gas present in the chamber 1 and detects the amount present for each mass.

In this case, for example, a component specific to the component supply TW can be selected as the specific component. By selecting a component derived from the sheet T or adhesive portion of the component supply TW, separate from the volatile components present in the chamber 1 (for example, moisture adsorbed by the chamber walls), it is possible to suppress the evaporation of volatile components during surface treatment.

Such components volatilizing from the removal device 101 appear as noise in the amount of pressure change. In this embodiment, the amount of ions derived from the volatile components volatilizing from the component supplier TW is detected. This allows for more accurate measurement of the amount of volatile components volatilizing from the component supplier TW.

Therefore, the mass of ions derived from volatile components volatilized from the component supplier TW is determined in advance, and ions with the same mass as this mass are monitored as the amount of volatile components volatilized from the component supplier TW. In this way, the amount of ions derived from volatile components volatilized from the component supplier TW is detected. In other words, the amount of components is detected by monitoring ions with the same mass as the mass of ions derived from volatile components volatilized from the component supplier TW. When the detected amount or change in the detected amount of ions derived from volatile components volatilized from the component supplier TW becomes a set amount or less, the control device 200 stops heating by the heating unit 4 and/or stops exhaust by the exhaust unit 3.

It is necessary to ensure that the ions generated in the component detector 7 are not subjected to forces due to collisions with other molecules between the time they are ionized and the time they are detected. Therefore, it is preferable that the component detector 7 be attached to the detection port 1c of the chamber 1 via a differential pumping system to prevent the generated ions from colliding with other molecules.

(2) The heating unit 4 may stop heating after a predetermined time has elapsed since the start of heating in a reduced pressure atmosphere, allowing the volatile components to volatilize. More specifically, the time from the start of heating until the pressure detected by the pressure detector 6 or the amount of a specific component detected by the component detector 7 decreases to a level that does not affect the bonding strength is determined in advance through experiments, etc. This time is set in the control device 200 as a set time (predetermined time), and when the set time has elapsed since the start of heating, the control device 200 stops heating by the heating unit 4. This simplifies the judgment process and allows the processing time to be constant. Heating may start when the pressure is reduced.

(3) In the case of an embodiment in which the aforementioned heating is not performed, the removal device 101 does not need to have a heating unit 4. In this case, the discharge unit 3 exposes the component supply TW before plasma processing to a reduced pressure atmosphere created by the discharge unit 3 within the chamber 1, thereby promoting volatilization from the component supply TW and discharging and removing the volatilized volatile components. In other words, the discharge unit 3 may remove the volatilized volatile components from the component supply TW simply by evacuating and reducing the pressure within the chamber 1. This allows for a simplified structure of the removal device 101.

In this case, the pressure detector 6 may be used to control the pressure reducing device 3a. That is, exhaust may be stopped when the pressure detected by the pressure detector 6 reaches a preset pressure. Also, instead of the pressure detector 6, the component detector 7 described above may be used to control the pressure reducing device 3a. That is, the discharge unit 3 may be configured to stop exhaust by the pressure reducing device 3a when the amount of a specific component detected by the component detector 7 reaches a preset amount.

Alternatively, the control device 200 may be configured to set a volatilization time, which is the time it takes for the volatile components to volatilize to the point where they no longer affect the bond strength, as a set time, and once the set time has elapsed since the start of decompression, the control device 200 may stop exhaust by the pressure reduction device 3a of the exhaust unit 3. In other words, the exhaust unit 3 may stop exhaust by the pressure reduction device 3a after the volatilization time, which is the time it takes for the volatilization of the volatile components to be completed after the start of exhaust by the pressure reduction device 3a, has elapsed, as determined in advance by experiment, etc.

(4) As shown in Figure 9, in addition to the heating unit 4, the chamber 1 may have an air inlet 1f and an outlet 1a, and the outlet 3 may have a circulation path connecting the blower 3e, trap 3g, and supply device 3f, the air inlet 1f, and the outlet 1a. The air inlet 1f is an opening for supplying gas into the chamber 1. A supply device 3f is connected to the air inlet 1f as a supply source for supplying gas into the chamber 1. The gas supplied into the chamber 1 may be, for example, the ambient air, CDA, or _N2 gas. In this embodiment, _N2 gas is used.

The exhaust port 1a is an opening for exhausting gas from the chamber 1 and for expelling volatile components that have evaporated from the component supply TW. The blower 3e circulates the gas supplied from the supply device 3f into the chamber 1. The blower 3e is a device that sucks in gas from one surface and blows it out from the other surface of the blower 3e. The blower 3e may be any device that can move gas. For example, a fan or a pump may be used.

Trap 3g captures volatile components that have evaporated from the component supply TW. Trap 3g is shaped like a hollow pipe, and can capture volatile components that have evaporated from the component supply TW inside. For example, the inside of trap 3g can be cooled. When volatile components that have evaporated from the component supply TW collide with the inside of trap 3g, heat is taken away, causing the volatile components to sublimate (precipitate) from a gas into a solid. As a result, the volatile components adhere to the inside of trap 3g.

In this embodiment, the pressure reducing device 3a, blower 3e, supply device 3f, trap 3g, exhaust port 1a, and air inlet 1f are connected by piping 3b and valve 3c. For example, as shown in FIG. 9, one of the three ends of the first T-shaped piping 3b1 is connected to the exhaust port 1a via valve 3c1. Valves 3c2 and 3c3 are connected to the remaining two ends of piping 3b1. The pressure reducing device 3a is connected to the end of piping 3b1 connected to valve 3c2, and one end of trap 3g is connected to the end connected to valve 3c3.

One of the three ends of the second T-shaped pipe 3b1 is connected to the air intake port 1f via valve 3c4. Valves 3c5 and 3c6 are connected to the remaining two ends of pipe 3b1. The end of pipe 3b1 connected to valve 3c5 is connected to supply device 3f, and the other surface of blower 3e is connected to the end connected to valve 3c6.

The other end of the trap 3g is connected to one surface of the air blower 3e via a pipe 3b2. With the above structure, the exhaust unit 3 is connected to the exhaust port 1a and the air inlet _1f , and _N2 gas can be supplied to and circulated within the chamber 1.

Next, the operation of the discharge unit 3 in this embodiment will be described. First, it is assumed that the component supplier TW has been previously loaded into the chamber 1 and supported by the support unit 2, with the valves 3c1 to 3c6 closed. The control device 200 controls the discharge unit 3 to open valves 3c1 and 3c2, and begin exhausting the gas in the chamber 1 using the pressure reducing device 3a. After the gas in the chamber 1 has been exhausted, the valves 3c1 and 3c2 are closed.

Next, valves 3c4 and 3c5 are opened, and _N2 gas is supplied by supply device 3f into chamber 1. After _N2 gas has been supplied until the pressure inside chamber 1 reaches the same as atmospheric pressure, valves 3c4 and 3c5 are closed, and heating by heating unit 4 is initiated. When the heating temperature reaches a preset temperature, control device 200 opens valves 3c1, 3c3, 3c6, and 3c4, and operates blower 3e.

When the heating temperature reaches a preset temperature (e.g., 40-200°C), the volatile components begin to volatilize from the component supply TW. In other words, the volatile components that have volatilized from the component supply TW are released into chamber 1 as gas.

When this evaporation begins, the control device 200 opens valves 3c1, 3c3, 3c6, and 3c4 and operates blower 3e, thereby starting the circulation of gas within chamber 1 by exhaust unit 3. Volatile components that have evaporated from component supplier TW are captured by trap 3g. The gas within chamber 1 is exhausted from chamber 1, and after the volatile components have been removed, it is sent back into chamber 1. In this way, the gas within chamber 1 is circulated, capturing and gradually removing the volatile components from the gas within chamber 1. In this case, blower 3e and trap 3g serve as an exhaust device that removes volatile components that have evaporated from component supplier TW.

Such volatile components are removed for a predetermined time. The predetermined time can be determined in advance through experiments, etc., and can be the time required for volatile components to be removed to the extent that it does not affect the bonding strength. This determined time is set in the control device 200 as the predetermined time. The control device 200 stops the circulation after the predetermined time and exhausts the gas inside the chamber 1 to the outside of the chamber 1. In other words, when the predetermined time has elapsed, the control device 200 stops the blower 3e and closes valves 3c3, 3c4, and 3c6. Next, valves 3c1 and 3c2 are opened, and the gas inside the chamber 1 is exhausted by the pressure reducing device 3a.

As mentioned above, in this embodiment, the gas within chamber 1 is heated and circulated to remove volatile components from the component supply TW. After the above-mentioned predetermined time has elapsed, the gas circulation and heating are stopped. After heating is stopped, the gas within chamber 1 is exhausted and returned to the atmospheric air. At this time, it is possible to wait for a period of time for cooling until oxidation of the component supply TW is no longer promoted, or it is possible to continue introducing and exhausting atmospheric air to promote cooling. This also means that volatile components that have evaporated are continuously removed from the component supply TW from immediately after heating is stopped until the component supply TW has cooled. After the component supply TW has reached a state where it can be removed, i.e., a temperature that does not promote oxidation or a temperature at which volatile components do not volatilize, the component supply TW is removed from chamber 1.

According to this embodiment, even without a reduced pressure, the volatilization of the volatile components from the component supply TW can be promoted by heating the component supply TW, and the volatile components can be efficiently removed. Furthermore, since the gas used to remove the volatile components is circulated, the amount of CDA or _N2 gas used can be reduced.

The endpoint (predetermined time) for removing volatile components is preferably set so that the removal of volatile components is completed reliably to the extent that it does not affect the bonding, and so that it can be completed in the shortest time possible. In this embodiment, this endpoint is referred to as the second volatilization time. The second volatilization time can be calculated, for example, as follows:

The second volatilization time is set based on the exhaust time t1 from the start of depressurization until pressure Ep1 is reached in the embodiment described above in which volatile components are removed by depressurizing while heating. Pressure Ep1 is the pressure at the position indicated by the white circle on the solid line in Figure 6 (C), and is the endpoint pressure when heat is applied to the component supplier TW in a depressurized atmosphere. In this embodiment, too, this pressure Ep1 and the exhaust time t1 from the start of depressurization until pressure Ep1 is reached are determined in advance. The determined pressure Ep1 and exhaust time t1 are stored in the control device 200.

Furthermore, the control device 200 stores an arbitrary heating time when heating the gas supplied into the chamber 1 while circulating it. For example, the heating time is set to the exhaust time t1 plus 30 seconds. The control device 200 then performs heating for this arbitrary heating time. After heating, the gas in the chamber 1 is exhausted. The pressure reached at the exhaust time t1 after exhaust begins is detected by the pressure detector 6, and this reached pressure is stored in the control device 200.

Next, the control device 200 compares the ultimate pressure with pressure Ep1. If the ultimate pressure is equal to or lower than pressure Ep1, the amount of volatile components volatilized from the component supplier TW has decreased to an amount that will not cause any problems during the mounting process. Therefore, the control device 200 stores the arbitrary heating time as the second volatilization time.

If the reached pressure is higher than pressure Ep1, the control device 200 resets the arbitrary heating time to a longer time. For example, it adds 30 seconds to the current arbitrary heating time and re-stores this as the new arbitrary heating time. Then, for the re-stored heating time, it performs heating while circulating the gas supplied to the chamber 1 for another component supplier TW, and again compares the reached pressure at exhaust time t1 with pressure Ep1. The control device 200 repeats this process until the reached pressure becomes equal to or lower than pressure Ep1.

Note that if the ultimate pressure in the initial measurement is equal to or less than pressure Ep1, it is possible that the heating time may be excessive. Therefore, for example, if the ultimate pressure is 10% or more lower than pressure Ep1, it is preferable to optimize the heating time in the same way as when the ultimate pressure is higher than pressure Ep1. Specifically, a time 30 seconds shorter than the arbitrary heating time is re-stored as the arbitrary heating time, heating processing is performed on a different component supplier TW, the ultimate pressure at exhaust time t1 is measured, and the ultimate pressure is compared with pressure Ep1. The control device 200 repeats this process until the ultimate pressure is within 10% of pressure Ep1. If the ultimate pressure is higher than pressure Ep1, the optimal heating time is determined by adding up to 30 seconds, for example 15 seconds, to the heating time.

In the above example, the specified range of pressure for optimization was set to 10%, but this value can be set by determining the optimal value through experiments, etc.

In addition, while the above explanation compares the ultimate pressure with pressure Ep1, it is also possible to measure the time from the start of exhaust until pressure Ep1 is reached and compare this with exhaust time t1. In this case, too, the desired heating time (second volatilization time) can be optimized, just as described above.

In this way, by determining the second volatilization time (endpoint) and circulating the gas based on this second volatilization time to remove the volatile components, the removal process can be carried out efficiently without having to reduce the pressure to near Ep1 and measure the pressure each time.

By providing a component detector 7 such as the one described above, it is possible to determine that the volatilization time has been secured when the amount of a specific component in the circulating gas reaches a preset amount (endpoint), and to cause the heating unit 4 to stop heating.

In addition, without circulating the gas, the gas supplied from the supply device 3f through the air inlet 1f may be discharged from the outlet 1a by the blower 3e while being heated by the heating unit 4. In this case, heating by the heating unit 4 is stopped when the amount of a specific component detected by the component detector 7 reaches a preset amount. In other words, the endpoints etc. are the same as above. Because the gas is not circulated, the gas path can be simplified. Instead of supplying gas from the air inlet 1f, outside air may be introduced by slightly opening the shutter 1e.

(5) While the removal device 101 in the above-described embodiment is a sheet-type device that processes component supplies TW one by one, it may also be a batch-type device that processes multiple component supplies TW together. For example, as shown in Figures 10(A) and 10(B), the support unit 2 supports multiple component supplies TW in a layered manner with spaces between them. That is, multiple protrusions 2b are provided in a layered manner on the surfaces of two plate-shaped members 2a facing each other. The plate-shaped members 2a have multiple holes 2c below the protrusions 2b through which cylindrical heating units 4 are inserted. Within the chamber 1, volatile components volatilizing from the sheets T and adhesive portions of the multiple component supplies TW supported by the support unit 2 are removed. This improves processing efficiency.

Furthermore, as shown in FIG. 10(A), the loading/unloading opening 1d may be larger than the loading/unloading opening 1d of the removal device 101 of the above-described embodiment. Alternatively, one loading/unloading opening 1d may be provided corresponding to each of the multiple component supplies TW mounted on the support unit 2. If the loading/unloading opening 1d is larger than the loading/unloading opening 1d of the removal device 101 of the above-described embodiment, the shutter 1e may also be larger than the shutter 1e of the removal device 101 of the above-described embodiment. Furthermore, if one loading/unloading opening 1d is provided corresponding to each of the multiple component supplies TW mounted on the support unit 2, a shutter 1e may be provided for each loading/unloading opening 1d.

(6) The support part 2 is not limited to the above-mentioned form as long as it is capable of supporting the component supply TW within the chamber 1. For example, as shown in FIG. 11(A), the support part 2 may be pin-shaped. FIG. 11(A) is a side cross-sectional view of the removal device 101, and FIG. 11(B) is a view from below of the cross section taken along line dd in FIG. 11(A). In this case, as shown in FIG. 11(B), it is preferable that the heating part 4 is provided so that its longitudinal direction is perpendicular to the direction in which the robot hand 191a is inserted into the chamber 1. Furthermore, the support part 2 is provided in a position where it does not interfere with the robot hand 191a and the heating part 4 and where it can support the ring R of the component supply TW.

Alternatively, as shown in FIG. 12(A), the support part 2 may be the inner bottom of the chamber 1. FIG. 12 is a cross-sectional view of the removal device 101, with FIG. 12(A) being a side cross-sectional view taken along line f-f in FIG. 12(B), and FIG. 12(B) being a top view of the cross-section taken along line e-e in FIG. 12(A). In this case, the removal device 101 is provided with the drive part 21 used in the plasma processing device 102. The component supply TW is carried into the chamber 1 by the robot hand 191a. After being carried into the chamber 1, the component supply TW is handed over to the drive part 21 and then supported by the support part 2. In this case, the heating part 4 is provided inside the support part 2 so as not to interfere with the rod 21a of the drive part 21, as shown in FIG. 12(B). In this way, the component supply TW can be heated by radiation and conduction. Therefore, the component supply TW can be heated efficiently.

In addition, the hatched area in the center of the heating unit 4 in Figure 12 (A) is the heater. This heater is a circular plate heater, but as with Figure 3, it may also be multiple cylindrical heaters. The heating units 4 in Figures 3, 8, 9, and 14 may also be circular plate heaters.

Furthermore, as shown in Figures 13(A) and (B), the heater may be ring-shaped. Figure 13(A) is a cross-sectional view of a heater with a cylindrical ring-shaped cross section, and Figure 13(B) is a bottom view of the component supply body TW and the heater of the heating unit 4 of Figure 13. The ring-shaped heater is placed in a position corresponding to the exposed portion of the sheet T. In this way, by placing the heater only in the exposed portion of the sheet T where the area from which the volatile components volatilize is large, it is possible to simplify the configuration and reduce power consumption. The ring-shaped heater may also be flat. Furthermore, multiple ring-shaped heaters with different diameters may be arranged concentrically. This allows for uniform heating and promotes the volatilization of the volatile components. The heater may be placed above the component supply body TW or on both the top and bottom. However, placing it on the bottom is preferable because it allows for proximity to the sheet T while avoiding adhesion of volatile components to the heater and direct heating of the electronic components E.

(7) After the volatile component removal process, UV light may be irradiated onto the component supply body TW. By doing so, even if volatile components that have evaporated during the volatile component removal process re-adhere to the wafer W, the volatile components adhering to the surface of the wafer W can be decomposed and removed. As shown in FIG. 14, the irradiation device 9 can be arranged to irradiate UV light through a quartz window 1g provided above the chamber 1 of the removal device 101. Furthermore, UV light may be irradiated after the volatile component removal process and before entering the plasma processing process, even if not by the removal device 101. Similar effects can be obtained.

(8) Furthermore, UV light irradiation may be performed during the volatile component removal process. This facilitates decomposition and removal of volatile components that volatilize. It also helps prevent re-adhesion to the wafer W.

(9) Furthermore, instead of the above-mentioned irradiation device 9, a heating lamp 4a may be provided. During the volatile component removal process, volatilization can be further promoted by heating the wafer W from above through the quartz window 1g. Of course, the heating unit 4 can also be a lamp 4a instead of a heater.

The heating temperature of the component supplier TW may also be measured by a temperature detector 8. The temperature detector 8 is, for example, a thermocouple. As shown in FIG. 14, the temperature detector 8 is inserted into the chamber 1 from the bottom of the chamber 1. The tip of the temperature detector 8 is positioned near the wafer W of the component supplier TW so as not to interfere with the heating unit 4 and the robot hand 191a.

(10) In the above-described embodiment, the pressure at the point when the slope of the pressure change switches is defined as the set pressure (end point). However, the end point may also be set based on the pressure change per unit time (ΔP/Δt). That is, exhaust and/or heating may be stopped when a preset set pressure change is reached. For example, the control device 200 stores the pressure change when there is no component supplier TW. The control device 200 then correlates the pressure in chamber 1 with the pressure change per unit time (ΔP/Δt) at that pressure based on the stored data. Thereafter, in step S100, the control device 200 monitors the pressure in chamber 1 and the pressure change per unit time (ΔP/Δt) at that pressure. The control device 200 compares the stored pressure change per unit time (ΔP/Δt) with the monitored pressure change per unit time (ΔP/Δt), and determines that the end point has been reached when the difference in pressure change is equal to or less than a threshold value.

(11) In a configuration that does not include the heating unit 4, the exhaust unit 3 may stop exhausting when the pressure detected by the pressure detector 6 indicates that the rate of pressure decrease from the start of exhausting has decreased compared to immediately after exhausting started, and then rises. For example, the control device 200 may determine that the volatilization of volatile components from the component supplier TW has been completed when the rate of pressure decrease from the start of exhausting detected by the pressure detector 6 has decreased compared to immediately after exhausting started, and then rises. As shown in FIG. 6(C), the rate of pressure decrease is large immediately after decompression starts, and then decreases. The point at which the rate of decrease further increases thereafter is set as the endpoint. Note that the point at which the rate of change increases after observing micro-oscillations in the pressure fluctuations may also be set as the endpoint.

(12) In an aspect having a heating unit 4, the heating unit 4 may stop heating when the rate of pressure decrease detected by the pressure detector 6 from the start of exhaust decreases from immediately after exhaust started and then increases. In this case, the control device 200 may determine that the volatilization of volatile components from the component supplier TW is complete when the rate of pressure decrease detected by the pressure detector 6 from the start of exhaust decreases from immediately after exhaust started and then increases. The endpoint may also be the point at which the rate of pressure decrease increases, then decreases, and then increases again. Alternatively, the endpoint may be the point at which the rate of change increases after observing micro-oscillations in the pressure fluctuations.

(13) In a configuration in which gas is heated by the heating unit 4, a configuration in which, after heating is stopped, gas is circulated by the air blower 3e and/or exhausted by the pressure reducing device 3a can be applied. That is, after heating by the heating unit 4 is stopped upon completion of volatilization of the volatile components, gas may be supplied by the supply device 3f for a certain period of time while the gas is circulated by the air blower 62 and/or exhausted by the pressure reducing device 61, thereby ventilating and cooling the chamber 1 and promoting the exhaust of the volatile components. During heating by the heating unit 4, the pressure may be reduced without circulating the gas, and after heating by the heating unit 4 is stopped upon completion of volatilization of the volatile components, a reactive gas or an inert gas may be introduced to, for example, a surface treatment pressure, and cooling may be performed by circulating and/or exhausting the gas by the air blower 62 for a certain period of time. When a reactive gas is introduced, after cooling by circulation and/or exhaust for a certain period of time, the chamber may be directly switched to plasma surface treatment, thereby improving throughput. If an inert gas is introduced, after a certain period of cooling by circulation and/or evacuation, a reactive gas is introduced and the process moves to surface treatment.

In this case, a temperature detector 8 may be provided to measure the temperature of the component supply body TW (see Figure 14), and circulation and/or exhaust may be stopped when the temperature measured by the temperature detector 8 reaches a preset temperature after heating by the heating unit 4 has stopped. Note that exhausting the gas has a greater cooling effect than circulating the gas.

(14) When volatilizing and removing volatile components, pressure reduction is not required. Volatilization of volatile components may be promoted by heating and exhaust alone. That is, in chamber 1, volatilization from component supply TW may be promoted by heating component supply TW using heating unit 4, and the volatilized volatile components may be removed by exhaust using exhaust unit 3. In this case, heating may be stopped when the amount of a specific component detected by component detector 7 reaches a predetermined set amount. For example, control device 200 may determine that volatilization of volatile components from component supply TW is complete when the amount of a specific component detected by component detector 7 reaches a predetermined set amount. Furthermore, exhaust unit 3 may have a circulation path connecting blower 3e, trap 3g, supply device 3f, air inlet 1f, and exhaust port 1a. This allows the gas in chamber 1 to be heated and circulated, facilitating the removal of volatile components from component supply TW.

In this embodiment, after heating by the heating unit 4 is stopped, gas may be supplied by the supply device 3f for a certain period of time while the gas is circulated by the blower 3e and/or exhausted by the pressure reducing device 3a, thereby ventilating and cooling the chamber 1 and promoting the discharge of volatile components. In this case, too, the endpoint is a certain period of time from when the amount of a specific component detected by the component detector 7 reaches a predetermined set amount. This allows for even greater removal of volatile components within the chamber 1 during surface treatment, enabling sufficient surface treatment. In this case, because the temperature of the component supply body TW is low during surface treatment, even if volatile components remain, they are prevented from volatilizing due to heating during surface treatment.

(15) In a mode in which heating is performed by the heating unit 4, even when the endpoint is reached, the cessation of heating may be delayed by a preset time to ensure further volatilization time. This can further reduce the volatile components in the chamber 1, more reliably suppress re-adhesion of volatile components, and make insufficient surface treatment less likely. Note that, rather than delaying the cessation of heating from the endpoint, a certain tolerance range may be added to the endpoint. For example, the endpoint may be set by adding a certain margin to the detected values of pressure and component amount, thereby more reliably completing volatilization.

(16) In the above-described embodiment, the mounting system 100 includes one bonding device 180, but this is not limited to this. As shown in FIG. 15, the mounting system 100 may include multiple bonding devices 180 in the mounting unit Y. The number of bonding devices 180 in the mounting unit Y can be determined according to the takt time determined from the component supplier TW, the size of the mounting board BW, the required processing time, etc., and increasing the number of bonding devices can improve efficiency.

In this way, when multiple bonding devices 180 are used in the mounting section Y, as shown in FIG. 15, a base 11m can be provided in the mounting section Y, and the multiple bonding devices 180 can be arranged so that they are connected to the periphery of the base 11m. While FIG. 15 shows two bonding devices 180, there is no limit to the number of bonding devices 180 connected, and it can be one, three, or more. Furthermore, a transport device 190α may be provided inside the base 11m, separate from the transport device 190, for distributing, supplying, and collecting component suppliers TW and mounting boards BW to each bonding device 180. Multiple transport devices 190α may be provided as needed.

In addition, a buffer device 11n capable of storing component suppliers TW and mounting boards BW may be provided inside the base 11m.

The buffer device 11n may store pre-processed component supply items TW and mounting boards BW without storing them in the supply item buffer device 160 and mounting board buffer device 170 of the mounting pre-processing unit X. Also, the buffer device 11n may store component supply items TW and mounting boards BW that have been mounted.

Furthermore, as shown in FIG. 15, a dedicated transport device 190β may be provided at the load port 11c. Furthermore, a supply buffer device 160 and a mounting board buffer device 170 may be provided on the load port 11c side of the base 11a, and the component supply items TW and mounting boards BW transported by the transport device 190β may be stored in these supply buffer devices 160 and mounting board buffer devices 170. The component supply items TW and mounting boards BW stored in these supply buffer devices 160 and mounting board buffer devices 170 can be transported to each chamber 11b by the transport device 190.

The buffer device 11n may be a storehouse capable of storing multiple component suppliers TW and mounting boards BW. The storehouses can be stacked with spaces between them to store the component suppliers TW and mounting boards BW.

The buffer device 11n may store pre-processed component supplies TW and mounting boards BW that are about to be mounted, or may store component supplies TW and mounting boards BW that have already been mounted.

Furthermore, multiple buffer devices 11n may be provided within the base 11m.

The buffer device 11n may also be a mounting table that can accommodate only one component supplier TW or mounting board BW. In this case, the component supplier TW or mounting board BW awaiting mounting is stored in the supplier buffer device 160 or mounting board buffer device 170, as in the previously described embodiment. The buffer device 11n may also be a storehouse that can store multiple component suppliers TW or mounting boards BW. In this case, the component suppliers TW or mounting boards BW may be stored in a stacked manner, just like the supplier buffer device 160 or mounting board buffer device 170.

Alternatively, a single transport device 190 may distribute component supplies TW and mounting boards BW to each of multiple bonding devices 180. In this case, the transport device 190 may be provided inside the base body formed by combining the base body 11a and the base body 11m.

(17) As described above, the mounting unit Y may be provided with a base 11m, and the mounting unit Y and the pre-mounting processing unit X may be separate and separable. In other words, the mounting system 100 may be configured so that the mounting unit Y and the pre-mounting processing unit X are independent of each other. The pre-mounting processing unit X may be configured to include the removal device 101. The removal device 101 may also be configured independent of the pre-mounting processing unit X. In this case, the component supply unit TW and the mounting board BW supplied from the previous process may be transported to the removal device 101 to remove volatile components, and the component supply unit TW and the mounting board BW from which the volatile components have been removed may be supplied to the load port 11c. In this case, the control device 200 may control both the pre-mounting processing unit X and the mounting unit Y, which is provided separately from it, or separate control devices may be provided for each.

(18) Even with the various modifications described above, it is possible to achieve narrow connection terminal spacing that was previously impossible due to contact between mounting components made of bumps of solder, gold, copper, aluminum, etc. on the connection terminals, thereby enabling a high-density package.

Other Embodiments
The above describes the embodiments of the present invention and modifications of each part, but these embodiments and modifications of each part are presented as examples and are not intended to limit the scope of the invention. These novel embodiments described above can be embodied in various other forms, and various omissions, substitutions, modifications, and combinations can be made without departing from the spirit of the invention. These embodiments and modifications are included within the scope and spirit of the invention, and are also included in the invention described in the claims.

1 Chamber 1a Exhaust port 1b Purge hole 1c Detection port 1d Carry-out port 1e Shutter 1f Air inlet 1g Window 2 Support part 2a Plate-shaped member 2b Protrusion 2c Hole 3 Exhaust part 3a Pressure reducing device 3b, 3b1, 3b2 Pipe 3c, 3c1 to 3c2 Valve 3d Exhaust line 3e Blower 3f Supply device 3g Trap 4 Heating part 4a Lamp 5 Purge part 5a Pipe 5b Valve 6 Pressure detector 7 Component detector 8 Temperature detector 9 Irradiation device 11a, 11m Base 11b Chamber 11c Load port 11d Window member 11e Hole 11f Stopper 11n Buffer device 10 Chamber 20 Stage 21 Drive part 21a, 21b Rod 21c Drive mechanism 30 Gas inlet 31 Supply device 31a Pipe 40 Plasma generator 41 Antenna 42 Power supply 43 Matching box 50 Mask 50a Support shaft 51 Drive unit 51a Rod 51b Drive mechanism 60 Exhaust port 61 Pressure reduction device 61a Pipe 100 Mounting system 101 Removal device 102 Plasma processing device 110 Supply body cleaning device 111 Cleaning chamber 111a Opening 111b Shutter 112 Support unit 113 Rotation mechanism 114 Cup 115 Supply unit 115a Nozzle 115b Moving mechanism 120 Mounting substrate cleaning device 130 Adjustment processing device 131 Irradiation device 140 Gauging device 150 Alignment device 160 Supply body buffer device 161 Storage 170 Mounting substrate buffer device 171 Storage 180 Bonding device 190, 190α, 190β Transport device 191 Transport robot 191a Robot hand 192 Moving mechanism 200 Control device 300 Pre-mounting processing device TW Component supply body BW Mounting board X Pre-mounting processing section Y Mounting section

Claims (19)

A pre-mounting processing device that performs pre-mounting processing of bonding surfaces of an electronic component and a mounting substrate before mounting the electronic component on the mounting substrate,
a plasma processing apparatus for performing a surface treatment with plasma on the bonding surfaces of the electronic component and/or the mounting substrate;
a cleaning device that cleans the electronic components and/or the mounting substrate before and/or after the plasma treatment in the plasma treatment device;
a removal device that promotes volatilization of volatile components from a component supply body in which a sheet T having an adhesive portion on its surface is supported by a ring R and electronic components E are adhered to the sheet T before plasma processing in the plasma processing device, and removes the volatile components;
A pre-mounting processing device comprising: The removal device comprises:
a chamber for accommodating the component supply;
an exhaust unit that exhausts the inside of the chamber to reduce the pressure;
and
In the chamber, the component supply body is exposed to a reduced pressure atmosphere created by the exhaust unit, thereby promoting volatilization from the component supply body, and the volatilized volatile components are exhausted and removed by the exhaust unit.
2. The pre-mounting processing device according to claim 1. a pressure detector for detecting the pressure in the chamber;
3. The pre-mounting processing apparatus according to claim 2, wherein the exhaust unit stops exhausting when the pressure detected by the pressure detector reaches a preset pressure or a preset pressure change amount. a pressure detector for detecting the pressure in the chamber;
3. The pre-mounting processing device according to claim 2, wherein the exhaust unit stops exhausting when a rate of pressure decrease from the start of exhausting detected by the pressure detector decreases immediately after the start of exhausting and then increases. a component detector for detecting the amount of a specific component in the gas in the chamber;
3. The pre-mounting processing device according to claim 2, wherein the exhaust unit stops exhausting when the amount of the specific component detected by the component detector or the amount of change in the amount of the specific component becomes a preset amount or becomes equal to or less than the preset amount. The removal device comprises:
a chamber for accommodating the component supply;
an exhaust section that exhausts the inside of the chamber;
a heating unit that heats the component supply body;
and
In the chamber, the component supply body is heated by the heating unit to promote volatilization from the component supply body, and the volatilized volatile components are discharged and removed by the discharge unit.
2. The pre-mounting processing device according to claim 1. the removal device has a component detector that detects the amount of a specific component in the gas within the chamber;
7. The pre-mounting processing device according to claim 6, wherein the heating unit stops heating when the amount of the specific component detected by the component detector or the amount of change in the amount of the specific component becomes a preset amount or becomes equal to or less than the preset amount. The removal device comprises:
a chamber for accommodating the component supply;
an exhaust unit that exhausts the inside of the chamber to reduce the pressure;
a heating unit configured to heat the component supply body within the chamber;
and
2. The pre-mounting processing device according to claim 1, wherein, in the chamber, the component supply body is heated by the heating section in a reduced pressure atmosphere created by the exhaust section, thereby promoting volatilization from the component supply body, and the volatilized volatile components are exhausted and removed by the exhaust section. a pressure detector for detecting the pressure in the chamber;
9. The pre-mounting processing apparatus according to claim 8, wherein the heating section stops heating when the pressure detected by the pressure detector reaches a preset pressure or a preset pressure change amount. a pressure detector for detecting the pressure in the chamber;
9. The pre-mounting processing device according to claim 8, wherein the heating unit stops heating when a rate of pressure decrease from the start of evacuation detected by the pressure detector decreases from immediately after the start of evacuation and then increases. a component detector for detecting the amount of a specific component in the gas in the chamber;
9. The pre-mounting processing device according to claim 8, wherein the heating unit stops exhausting and/or heating when the amount of the specific component detected by the component detector or the amount of change in the amount of the specific component becomes a preset amount or becomes equal to or less than a preset amount. a pressure detector for detecting a pressure in the chamber;
a temperature detector for measuring the temperature of the component supplier;
the heating unit stops heating based on the pressure detected by the pressure detector,
The pre-mounting processing apparatus according to claim 8 , wherein the exhaust unit stops exhausting when the temperature measured by the temperature detector reaches a set temperature after the heating unit stops heating. The chamber comprises:
an air inlet for supplying gas into the chamber;
an exhaust port for exhausting the gas in the chamber and for exhausting volatile components volatilized from the component supply body;
and
The discharge section is
a circulation path connecting the air inlet and the air outlet;
a blower that circulates the gas supplied into the chamber;
a trap for capturing volatile components volatilized from the component supply;
having
7. The pre-mounting processing device according to claim 6. The chamber comprises:
an air inlet for supplying gas into the chamber;
an exhaust port for exhausting the gas in the chamber and for exhausting volatile components volatilized from the component supply body;
and
The discharge section is
a circulation path connecting the air inlet and the air outlet;
a blower that circulates the gas supplied into the chamber;
a trap for capturing volatile components volatilized from the component supply;
having
9. The pre-mounting processing device according to claim 8. a pre-mounting processing device according to any one of claims 1 to 14;
a bonding device that removes the electronic components processed by the pre-mounting processing device from the component supply body and mounts them on the mounting board;
A mounting system comprising: A pre-mounting treatment method for performing pre-mounting treatment of bonding surfaces of an electronic component and a mounting substrate before mounting the electronic component on a mounting substrate, comprising:
a surface treatment using plasma on the bonding surfaces of the electronic component and/or the mounting substrate;
a cleaning treatment for cleaning the electronic component and/or the mounting substrate before and/or after the surface treatment;
A pre-mounting treatment method characterized in that, before the surface treatment, a sheet T having an adhesive portion on its surface is supported by a ring R, and the evaporation of volatile components is promoted from a component supply body having electronic components E adhered to the sheet T, thereby removing the volatile components. The component supply body is placed in a chamber, and the chamber is evacuated to reduce the pressure;
In the chamber, the component supply body is exposed to a reduced pressure atmosphere to promote volatilization from the component supply body, and the volatilized volatile components are discharged and removed from the chamber.
17. The pre-mounting process method according to claim 16. The component supply body is housed in a chamber and heated;
The component supply body is heated in the chamber to promote volatilization from the component supply body, and the volatilized volatile components are discharged and removed from the chamber.
17. The pre-mounting process method according to claim 16. The component supply body is placed in a chamber, and the chamber is evacuated, decompressed, and heated;
In the chamber, the component supply body is heated in a reduced pressure atmosphere to promote volatilization from the component supply body, and the volatilized volatile components are discharged and removed from the chamber.
17. The pre-mounting process method according to claim 16.