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WO2025244063A1 - Light-emitting device and illumination device - Google Patents

Light-emitting device and illumination device

Info

Publication number
WO2025244063A1
WO2025244063A1 PCT/JP2025/018417 JP2025018417W WO2025244063A1 WO 2025244063 A1 WO2025244063 A1 WO 2025244063A1 JP 2025018417 W JP2025018417 W JP 2025018417W WO 2025244063 A1 WO2025244063 A1 WO 2025244063A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
emitting device
heat dissipation
light emitting
wavelength conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2025/018417
Other languages
French (fr)
Japanese (ja)
Inventor
慎也 久保田
和 瀬尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Publication of WO2025244063A1 publication Critical patent/WO2025244063A1/en
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21SNON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50Cooling arrangements
    • F21V29/502Cooling arrangements characterised by the adaptation for cooling of specific components
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50Cooling arrangements
    • F21V29/502Cooling arrangements characterised by the adaptation for cooling of specific components
    • F21V29/503Cooling arrangements characterised by the adaptation for cooling of specific components of light sources
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50Cooling arrangements
    • F21V29/70Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V3/00Globes; Bowls; Cover glasses
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V3/00Globes; Bowls; Cover glasses
    • F21V3/04Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings
    • F21V3/06Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by the material
    • F21V3/08Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by the material the material comprising photoluminescent substances
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/858Means for heat extraction or cooling
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00Light-generating elements of semiconductor light sources
    • F21Y2115/10Light-emitting diodes [LED]

Definitions

  • This disclosure relates to light-emitting devices and lighting devices.
  • Patent Document 1 describes technology related to lighting devices.
  • a light-emitting device is disclosed.
  • the light-emitting device comprises a substrate, a wavelength conversion member, a first light-emitting element, and a first heat dissipation member.
  • the wavelength conversion member emits illumination light based on excitation light.
  • the first light-emitting element is located between the substrate and the wavelength conversion member and emits excitation light.
  • the first heat dissipation member is located between the substrate and the wavelength conversion member, spaced apart from the first light-emitting element, and has a thermal conductivity higher than that of the wavelength conversion member.
  • the lighting device comprises the light-emitting device, a cylindrical body, and a second heat dissipation member.
  • the cylindrical body houses the light-emitting device.
  • the second heat dissipation member contacts the first heat dissipation member and the inner surface of the cylindrical body.
  • FIG. 1 is a cross-sectional view schematically showing an example of the configuration of a light emitting device according to the first embodiment.
  • FIG. 2 is a plan view schematically illustrating an example of the configuration of the light emitting device according to the first embodiment.
  • FIG. 3 is a cross-sectional view schematically showing an example of the configuration of the light emitting device according to the second embodiment.
  • FIG. 4 is a plan view schematically showing an example of the configuration of the light emitting device according to the second embodiment.
  • FIG. 5 is an exploded perspective view schematically illustrating an example of the configuration of an illumination device according to the third embodiment.
  • FIG. 6 is a cross-sectional view schematically showing an example of the configuration of a light emitting device according to the fourth embodiment.
  • FIG. 1 is a cross-sectional view schematically showing an example of the configuration of a light emitting device according to the first embodiment.
  • FIG. 2 is a plan view schematically illustrating an example of the configuration of the light emitting device according to the first embodiment
  • FIG. 7 is a plan view schematically showing an example of the configuration of a light emitting device according to the fifth embodiment.
  • FIG. 8 is a cross-sectional view schematically showing an example of the configuration of a light emitting device according to the fifth embodiment.
  • FIG. 9 is a plan view schematically showing a first example of the configuration of the light emitting device according to the sixth embodiment.
  • FIG. 10 is a plan view schematically showing a second example of the configuration of the light emitting device according to the sixth embodiment.
  • FIG. 11 is a plan view schematically illustrating an example of the configuration of a light emitting device according to the seventh embodiment.
  • FIG. 12 is a diagram schematically illustrating an example of the electrical configuration of a light emitting device.
  • FIG. 13 is a graph showing an example of the wavelength dependency of the absorptance of a phosphor.
  • FIG. 14 is a cross-sectional view schematically showing a first example of the configuration of the light emitting device according to the eighth embodiment.
  • FIG. 15 is a cross-sectional view schematically showing a second example of the configuration of the light emitting device according to the eighth embodiment.
  • FIG. 16 is a cross-sectional view schematically showing a first example of the configuration of a light emitting device according to the ninth embodiment.
  • FIG. 17 is a perspective view schematically illustrating an example of the configuration of an intermediate member and a first heat transfer member according to a first example of the ninth embodiment.
  • FIG. 18 is a graph schematically showing an example of the temperature dependence of the thermal conductivity of sapphire.
  • FIG. 19 is a diagram schematically illustrating an example of the positional relationship between the first opening and the first resin member.
  • FIG. 20 is a cross-sectional view schematically showing a second example of the configuration of the light emitting device according to the ninth embodiment.
  • FIG. 21 is a perspective view schematically illustrating an example of the configuration of a wavelength conversion member, an intermediate member, a first heat transfer member, and a second heat transfer member according to a second example of the ninth embodiment.
  • FIG. 22 is a cross-sectional view schematically showing a third example of the configuration of the light emitting device according to the ninth embodiment.
  • FIG. 23 is a diagram schematically illustrating an example of how the fluorescent light travels inside the supporting member.
  • FIG. 24 is a cross-sectional view schematically showing a fourth example of the configuration of the light emitting device according to the ninth embodiment.
  • FIG. 25 is a cross-sectional view schematically showing a first example of the configuration of a light emitting device according to the tenth embodiment.
  • FIG. 26 is a plan view schematically showing a first example of the configuration of the light emitting device according to the tenth embodiment.
  • FIG. 27 is a cross-sectional view schematically showing a first specific example of the configuration of a light emitting device in which a pressing portion 65 is not provided.
  • FIG. 28 is a cross-sectional view schematically showing a second specific example of the configuration of a light emitting device in which a pressing portion 65 is not provided.
  • FIG. 29 is a cross-sectional view schematically showing a third specific example of the configuration of a light emitting device in which a pressing portion 65 is not provided.
  • FIG. 30 is a plan view schematically showing a second example of the configuration of the light emitting device according to the tenth embodiment.
  • FIG. 31 is a perspective view schematically illustrating a first example of the configuration of an illumination device according to an eleventh embodiment.
  • FIG. 32 is a perspective view schematically illustrating a second example of the configuration of the illumination device according to the eleventh embodiment.
  • FIG. 33 is a cross-sectional view schematically showing an example of the configuration of a light emitting device according to the twelfth embodiment.
  • FIG. 34 is a cross-sectional view schematically showing an example of the configuration of a light emitting device according to the thirteenth embodiment.
  • a light-emitting device that includes a housing, an LED (Light Emitting Diode) element, and a fluorescent material.
  • the housing has a recess, and the LED element is located within the recess.
  • the fluorescent material has a plate-like shape and is located so as to cover the opening of the recess in the housing.
  • the fluorescent material includes a plate-like transparent material and a plurality of phosphor particles dispersed within the transparent material.
  • the interior of the recess in the housing may be filled with a transparent resin that covers the LED element. Excitation light emitted from the LED element passes through the transparent resin and enters the fluorescent material. Each phosphor particle in the fluorescent material absorbs the excitation light and emits fluorescence. The fluorescence is emitted into external space, for example as illumination light.
  • the inventor has created a light-emitting device 1 that can improve brightness.
  • An example of the light-emitting device 1 is described below.
  • Fig. 1 is a cross-sectional view schematically showing an example of a part of the configuration of a light-emitting device 1 according to a first embodiment.
  • Fig. 2 is a plan view schematically showing an example of a part of the configuration of the light-emitting device 1. In Fig. 2, various parts are omitted as appropriate.
  • Fig. 1 shows a cross section taken along line II of Fig. 2.
  • the light-emitting device 1 includes a substrate 2, a light-emitting element 3 (corresponding to an example of a first light-emitting element), a wavelength conversion member 4, a first resin member 51, and a first heat dissipation member 6.
  • the light-emitting element 3 is located on the substrate 2.
  • the light-emitting element 3 emits excitation light.
  • the wavelength conversion member 4 is located on the opposite side of the light-emitting element 3 from the substrate 2. In other words, the light-emitting element 3 is located between the wavelength conversion member 4 and the substrate 2.
  • the wavelength conversion member 4 emits illumination light based on the excitation light from the light-emitting element 3.
  • the illumination light is emitted into an external illumination space.
  • the wavelength conversion member 4 also generates heat. When the temperature of the wavelength conversion member 4 increases due to this heat, the luminous efficiency of the wavelength conversion member 4 decreases.
  • the first heat dissipation member 6 is located between the substrate portion 2 and the wavelength conversion member 4.
  • the thermal conductivity of the first heat dissipation member 6 is higher than that of the wavelength conversion member 4. Therefore, heat generated in the wavelength conversion member 4 can be dissipated to the outside through the first heat dissipation member 6. This reduces the possibility that the luminous efficiency of the wavelength conversion member 4 will decrease due to heat.
  • the first resin member 51 is located between the substrate portion 2 and the wavelength conversion member 4, and has an annular shape that surrounds the light-emitting element 3 in a planar view.
  • the first resin member 51 is located closer to the light-emitting element 3 than the first heat dissipation member 6.
  • the first heat dissipation member 6 is located outside the first resin member 51, and is adjacent to the first resin member 51 with a gap between them.
  • the first resin member 51 may be reflective to the excitation light. If the first resin member 51 is reflective, the excitation light traveling from the light-emitting element 3 toward the first resin member 51 is reflected by the first resin member 51, and a portion of the reflected light enters the wavelength conversion member 4. Therefore, the inner diameter of the first resin member 51 defines the incidence area of the excitation light on the wavelength conversion member 4. Because the first resin member 51 surrounds the light-emitting element 3 at a position closer to the light-emitting element 3 than the first heat dissipation member 6, the inner diameter of the first resin member 51 can be made smaller. This allows the incidence area of the wavelength conversion member 4 to be made smaller. In other words, the excitation light is concentrated in a narrower incidence area.
  • the incident area can correspond to the emission area of the illumination light. This allows the wavelength conversion member 4 to emit illumination light with a smaller output diameter and higher brightness.
  • the total luminous flux of the illumination light may be, for example, 800 lumens or more.
  • the light emitting device 1 includes the first heat dissipation member 6, which allows heat from the wavelength conversion member 4 to be effectively dissipated. Therefore, the light emitting device 1 can emit high-brightness illumination light with high reliability.
  • the substrate unit 2 may include a substrate 21 and an insulating film 22.
  • the substrate 21 may have a plate-like shape.
  • the substrate 21 has a first surface 21a and a second surface 21b.
  • the first surface 21a is a surface facing the second surface 21b in the thickness direction of the substrate 21.
  • the first surface 21a and the second surface 21b may be flat surfaces.
  • the substrate 21 may have a rectangular shape in a planar view.
  • a planar view refers to viewing an object with the line of sight along the thickness direction of the substrate 21.
  • the substrate 21 may have a square shape.
  • the substrate 21 may have high thermal conductivity. This can improve the heat dissipation performance of the light-emitting device 1.
  • the thermal conductivity of the substrate 21 may be higher than that of the wavelength conversion member 4, which will be described later.
  • the substrate 21 may be formed of a metal such as copper or aluminum, or a ceramic such as alumina.
  • the insulating film 22 is located on the first surface 21a of the substrate 21.
  • the insulating film 22 may be located over the entire first surface 21a of the substrate 21.
  • the insulating film 22 may be, for example, an oxide film or a nitride film.
  • a conductive pattern 7 may be located on the insulating film 22.
  • the conductive pattern 7 is a pattern for supplying power to the light-emitting element 3.
  • the conductive pattern 7 is formed of a metal such as gold.
  • the conductive pattern 7 includes a first conductive pattern 71 and a second conductive pattern 72. A DC voltage is applied between the first conductive pattern 71 and the second conductive pattern 72 by a power supply (not shown).
  • the conductive pattern 7 can also be said to belong to the substrate portion 2.
  • the substrate portion 2 can also be said to be a wiring board.
  • the second conductive pattern 72 may include an element electrode 72a, an external electrode 72b, and wiring 72c.
  • the element electrode 72a may have a circular shape in a planar view.
  • the element electrode 72a may be located in the center of the substrate 21 in a planar view.
  • the light-emitting element 3 is electrically connected to the element electrode 72a.
  • the external electrode 72b may be located at a corner of the substrate 21 in a plan view.
  • the external electrode 72b may have a rectangular shape in a plan view.
  • One end of the wiring 86 is connected to the external electrode 72b.
  • the wiring 72c electrically connects the element electrode 72a and the external electrode 72b.
  • the wiring 72c has a strip shape and may extend linearly from the element electrode 72a to the external electrode 72b.
  • the wiring 72c extends, for example, along a diagonal line of the substrate 21.
  • the diameter of the element electrode 72a may be larger than the width of the wiring 72c, and the diagonal length of the external electrode 72b may be larger than the width of the wiring 72c.
  • the first conductive pattern 71 may include an element electrode 71a, an external electrode 71b, and wiring 71c.
  • the element electrode 71a may have an arc shape concentric with the element electrode 72a.
  • the element electrode 71a is aligned radially with the element electrode 72a at a distance.
  • the element electrode 71a may be positioned radially outward of the element electrode 72a.
  • the central angle of the element electrode 71a may be greater than 180 degrees.
  • the wiring 72c extends, passing between both ends of the arc of the element electrode 71a.
  • the light-emitting element 3 is electrically connected to the element electrode 71a, as described below.
  • the external electrode 71b may be located at a corner of the substrate 21 that is diagonally opposite the external electrode 72b.
  • the external electrode 71b may have a rectangular shape in a plan view.
  • One end of the wiring 85 is connected to the external electrode 71b.
  • the wiring 71c electrically connects the element electrode 71a and the external electrode 71b.
  • the wiring 71c extends, for example, along a diagonal line of the substrate 21.
  • the inner diameter of the element electrode 71a may be larger than the width of the wiring 71c, and the diagonal length of the external electrode 71b may be larger than the width of the wiring 71c.
  • the light-emitting element 3 emits excitation light.
  • Monochromatic light such as purple, blue-violet, or blue is used as the excitation light. More specifically, the excitation light may be any of purple light having an intensity peak at a wavelength of 405 nanometers (nm), blue-violet light having an intensity peak at a wavelength of 420 nm, and blue light having an intensity peak at a wavelength of 450 nm.
  • the light-emitting element 3 is located on the substrate portion 2.
  • the light-emitting element 3 may have a plate-like shape.
  • the light-emitting element 3 may be located on the substrate portion 2 with its thickness direction aligned with the thickness direction of the substrate 21.
  • the light-emitting element 3 has a first surface 3a and a second surface 3b that face each other in the thickness direction, with the second surface 3b located on the substrate portion 2 side.
  • a first element electrode (not shown) may be formed on the first surface 3a, and a second element electrode (not shown) may be formed on the second surface 3b.
  • the light-emitting element 3 is, for example, a semiconductor light-emitting element.
  • the light-emitting element 3 includes a p-type semiconductor layer, an n-type semiconductor layer, a first element electrode, and a second element electrode.
  • the p-type semiconductor layer and the n-type semiconductor layer are adjacent in the thickness direction and can be bonded to each other.
  • the first element electrode is connected to one of the p-type and n-type semiconductor layers, and the second element electrode is connected to the other of the p-type and n-type semiconductor layers.
  • the first element electrode and the second element electrode are formed of, for example, metal.
  • the light-emitting element 3 is, for example, an LED (Light Emitting Diode) element.
  • the light-emitting element 3 may be located on an element electrode 72a (corresponding to an example of a first electrode) of the second conductive pattern 72.
  • the second element electrode on the second surface 3b of the light-emitting element 3 is electrically connected to the element electrode 72a.
  • the second element electrode of the light-emitting element 3 may be connected to the element electrode 72a by an electrode material such as solder.
  • the first element electrode of the light-emitting element 3 is connected to the element electrode 71a of the first conductive pattern 71, for example, via a wire 31.
  • the light-emitting element 3 When a power supply (not shown) outputs a voltage between the first conductive pattern 71 and the second conductive pattern 72 via wiring 85 and wiring 86, the light-emitting element 3 emits excitation light. As the light is emitted, the light-emitting element 3 also generates heat. This heat is transferred to the substrate 21, for example, via the insulating film 22.
  • the light emitting device 1 may further include a reflective material 8.
  • the reflective material 8 is located on the conductive pattern 7 and the insulating film 22 at a position adjacent to the light emitting element 3 in a planar view.
  • the reflective material 8 may be located in an area that does not overlap with the light emitting element 3 in a planar view.
  • the reflective material 8 may be in contact with the entire periphery of the side surface of the light emitting element 3.
  • the reflective material 8 is located between the first heat dissipation member 6 (described below) and the light emitting element 3.
  • the reflective material 8 has insulating properties. This reduces the possibility of a short circuit occurring between the first conductive pattern 71 and the second conductive pattern 72.
  • the reflector 8 is reflective to excitation light or illumination light.
  • the reflectance (maximum value) of the reflector 8 to excitation light or illumination light may be, for example, 50% or more, 60% or more, 70% or more, 80% or more, or 90% or more.
  • the reflector 8 is formed, for example, from resin.
  • the wavelength conversion member 4 is located on the opposite side of the substrate unit 2 with respect to the light-emitting element 3. In other words, the light-emitting element 3 is located between the wavelength conversion member 4 and the substrate unit 2.
  • the wavelength conversion member 4 faces the light-emitting element 3 at an interval in the thickness direction of the substrate 21. Excitation light from the light-emitting element 3 is incident on the wavelength conversion member 4.
  • the wavelength conversion member 4 emits illumination light based on the excitation light.
  • the wavelength conversion member 4 absorbs, for example, the excitation light and emits illumination light having a wavelength different from the wavelength of the excitation light.
  • the wavelength conversion member 4 contains, for example, a phosphor. In this case, the illumination light is fluorescence.
  • the wavelength conversion member 4 may be made of an inorganic material.
  • the wavelength conversion member 4 may be ceramic.
  • the wavelength conversion member 4 may include any one of a sintered body, glass, crystallized glass, and crystal.
  • the crystal includes, for example , polycrystalline ceramics obtained by dispersing phosphor particles in polycrystalline aluminum oxide ( Al2O3 ) and sintering the resulting material.
  • the volume concentration of Al2O3 is, for example, 80 vol% or more and 99.99 vol% or less, and the volume concentration of the phosphor particles is, for example, 0.01 vol% or more and 20 vol% or less. An example of the phosphor particles will be described later.
  • the glass contains, for example, calcium oxide (CaO 2 ), Al 2 O 3 , silicon oxide (SiO 2 ), aluminum nitride (AlN), and at least one of rare earth elements.
  • the rare earth elements include at least one of cerium (Ce), praseodymium (Pr), europium (Eu), terbium (Tb), dysprosium (Dy), thulium (Tm), erbium (Er), and neodymium (Nd).
  • the molar concentration of CaO 2 is, for example, 0 mol% or more and 50 mol% or less
  • the molar concentration of Al 2 O 3 is, for example, 0 mol% or more and 30 mol% or less
  • the molar concentration of SiO 2 is, for example, 5 mol% or more and 60 mol% or less
  • the molar concentration of AlN is, for example, 5 mol% or more and 40 mol% or less
  • the molar concentration of the rare earth elements is, for example, 0.1 mol% or more and 20 mol% or less.
  • the crystallized glass contains, for example, Al 2 O 3 , SiO 2 , and M, which will be described below, as a base glass.
  • M includes at least one of magnesium oxide (MgO), CaO, strontium oxide (SrO), barium oxide (BaO), and yttrium oxide (Y 2 O 3 ).
  • the molar concentration of SiO 2 is, for example, 5 mol% or more and 50 mol% or less
  • the molar concentration of Al 2 O 3 is, for example, 10 mol% or more and 50 mol% or less
  • the molar concentration of M is, for example, 5 mol% or more and 70 mol% or less.
  • the crystallized glass may further contain at least one of titanium oxide (TiO 2 ), zirconium oxide (ZrO 2 ), phosphorus oxide (P 2 O 5 ), and lithium oxide (Li 2 O).
  • TiO 2 titanium oxide
  • ZrO 2 zirconium oxide
  • P 2 O 5 phosphorus oxide
  • Li 2 O lithium oxide
  • the molar concentration of the total amount of these is, for example, 0 mol% or more and 10 mol% or less.
  • the crystallized glass may contain a rare earth element as an activator. Examples of the rare earth element are as described above. The molar concentration of the rare earth element is, for example, 0.01 mol % or more and 5 mol % or less.
  • the crystals include, for example, (Y,Gd) 3 (Al,Ga) 5 O 12 :Ce 3+ single crystals or eutectic with sapphire.
  • the wavelength conversion member 4 may include a plurality of phosphor particles 41 and a binder layer 42 that binds the plurality of phosphor particles 41 together.
  • Each of the plurality of phosphor particles 41 is, for example, a phosphor particle that absorbs excitation light and emits fluorescence.
  • the plurality of phosphor particles 41 may include, for example, one or more types of phosphor particles that emit fluorescence of one or more wavelength spectra different from the wavelength spectrum of the excitation light in response to irradiation with excitation light.
  • the one or more types of phosphor particles may include, for example, multiple types of phosphor particles that emit fluorescence having mutually different wavelength spectra in response to irradiation with excitation light.
  • the multiple types of phosphor particles may include, for example, red phosphor particles, green phosphor particles, and blue phosphor particles.
  • the red phosphor is a phosphor that emits red (R) fluorescence in response to irradiation with excitation light.
  • the green phosphor is a phosphor that emits green (G) fluorescence in response to irradiation with excitation light.
  • the blue phosphor is a phosphor that emits blue (B) fluorescence in response to irradiation with excitation light.
  • the phosphor that constitutes the multiple phosphor particles may be, for example, a phosphor containing a rare earth such as europium (Eu), cerium (Ce), or yttrium (Y) in the form of a compound such as a phosphate, oxide, silicate, nitride, fluoride, aluminate, or sulfide.
  • a rare earth such as europium (Eu), cerium (Ce), or yttrium (Y) in the form of a compound such as a phosphate, oxide, silicate, nitride, fluoride, aluminate, or sulfide.
  • the red phosphor may be, for example, a phosphor whose peak fluorescence intensity wavelength in response to irradiation with excitation light is in the range of approximately 620 nm to 750 nm .
  • Examples of materials for the red phosphor include CaAlSiN3 :Eu, Y3O3S :Eu, Y3O3 :Eu, SrCaClAlSiN3:Eu2 + , and CaAlSi(ON) 3 : Eu.
  • the red phosphor particles may be, for example, phosphor particles that do not contain phosphorus (P) (also referred to as non-phosphorus phosphor particles), or phosphor particles that contain nitride.
  • the green phosphor may be, for example, a phosphor whose peak fluorescence intensity wavelength in response to irradiation with excitation light is in the range of approximately 495 nm to 570 nm.
  • materials that may be used for the green phosphor include ⁇ -sialon ( ⁇ -SiAlON:Eu), SrSi 2 (O, Cl) 2 N 2 :Eu, (Sr, Ba, Mg) 2 SiO 4 :Eu 2 2+ , ZnS:Cu, Al, and Zn 2 SiO 4 :Mn.
  • phosphor particles that do not contain phosphorus (P) (non-phosphorus phosphor particles) or phosphor particles containing nitride may be used as the phosphor particles of the green phosphor.
  • the blue phosphor may be, for example, a phosphor that emits fluorescent light in response to irradiation with excitation light with a peak intensity wavelength in the range of approximately 450 nm to 495 nm.
  • materials that may be used for the blue phosphor include (Ba,Sr) MgAl10O17 :Eu, BaMgAl10O17 :Eu, (Sr,Ca,Ba) 10 ( PO4 ) 6Cl2 : Eu, (Sr,Ba)10 ( PO4 ) 6Cl2 : Eu , and ⁇ -sialon.
  • Examples of phosphor particles that may be used for the blue phosphor include phosphor particles containing phosphorus (P) (also referred to as phosphorus-based phosphor particles), and phosphor particles containing nitride.
  • the particle size of the phosphor particles 41 may be, for example, approximately 5 micrometers ( ⁇ m) to 50 ⁇ m.
  • the phosphor particles 41 generate heat when they absorb the excitation light. This can cause the temperature of the phosphor particles 41 to rise. If the temperature of the phosphor particles 41 increases, the luminous efficiency of the phosphor particles 41 may decrease.
  • the luminous efficiency of the phosphor particles 41 here refers to, for example, the ratio of the number of photons of the fluorescent light from the phosphor particles 41 to the number of photons of the excitation light incident on the phosphor particles 41. If the temperature of the phosphor particles 41 increases too much, the phosphor particles 41 may quench. Such a decrease in the luminous efficiency and quenching of the phosphor particles 41 is undesirable, so it is desirable to mitigate the temperature rise of the phosphor particles 41.
  • the binder layer 42 is translucent for excitation light and fluorescence.
  • the binder layer 42 bonds multiple phosphor particles 41 together.
  • the wavelength conversion member 4 has a form in which multiple phosphor particles 41 are dispersed in the binder layer 42.
  • the binder layer 42 may be made of, for example, resin or glass.
  • the binder layer 42 includes an organic resin or an inorganic material.
  • the binder layer 42 may include glass as a primary inorganic material.
  • the term "primary component" refers to the component that is contained in the largest proportion (also referred to as the content) of the components constituting the substance.
  • Glass is translucent, for example, to allow excitation light to penetrate into the interior of the wavelength conversion member 4 and to radiate fluorescence emitted by phosphor particles excited in response to irradiation with excitation light to the outside of the wavelength conversion member 4.
  • glass is translucent, for example, to allow excitation light and fluorescence to pass through.
  • the binder layer 42 may also be referred to as a glass matrix. If the binder layer 42 is formed from an inorganic material (e.g., a glass matrix), the binder layer 42 is less susceptible to thermal degradation than an organic resin.
  • low-melting-point glass may be used as the glass constituting the binder layer 42.
  • oxide glass having a melting point (Tm) of 200 degrees Celsius (200°C) to 700°C may be used as the low-melting-point glass.
  • the oxide glass serving as the low-melting-point glass has a glass transition point (Tg) in the range of 100°C to 600°C and a crystallization temperature (Tc) in the range of 150°C to 650°C.
  • the oxide glass may be, for example, a glass containing two or more oxides selected from silicon dioxide ( SiO2 ), aluminum oxide ( Al2O3 ), boron oxide ( B2O3 ), sodium oxide ( Na2O3 ), potassium oxide ( K2O ), lithium oxide ( Li2O ), calcium oxide (CaO), barium oxide (BaO), zinc oxide ( ZnO), lead monoxide (PbO), and diphosphorus pentoxide ( P2O5 ) as its main components.
  • the oxide glass may contain an oxide of a metal element or an oxide of a metalloid element.
  • the binder layer 42 contains, for example, an amorphous phase of glass.
  • This amorphous phase may be, for example, the amorphous phase portion of a low-melting-point glass.
  • the amorphous phase made of glass has translucency, allowing, for example, excitation light and fluorescent light to pass through.
  • the first resin member 51 is located between the substrate unit 2 and the wavelength conversion member 4. As shown in FIG. 2, the first resin member 51 may have an annular shape in a planar view. The first resin member 51 may be located so as to surround the light-emitting element 3 in a planar view (see also FIG. 1). The first resin member 51 may also be called a dam member. In a planar view, the inner contour (i.e., inner peripheral edge) of the first resin member 51 may be located outside the contour of the light-emitting element 3. In other words, the light-emitting element 3 does not need to overlap the first resin member 51 in a planar view. In this case, the first resin member 51 can seal the light-emitting element 3 in a sealed space.
  • the light-emitting element 3 may also partially overlap the first resin member 51 in a planar view. As shown in FIG. 1, the first resin member 51 may be in contact with the reflector 8 and the wavelength conversion member 4. The first resin member 51 may be bonded to the reflector 8 and the wavelength conversion member 4, respectively.
  • the first resin member 51 may be reflective to the excitation light.
  • the reflectance of the first resin member 51 to the excitation light may be, for example, 50% or more, 60% or more, 70% or more, 80% or more, or 90% or more.
  • the first resin member 51 may be reflective to the illumination light.
  • the reflectance (maximum value) of the first resin member 51 to the illumination light may be, for example, 50% or more, 60% or more, 70% or more, 80% or more, or 90% or more.
  • the first resin member 51 may have a white surface, for example.
  • the first resin member 51 may be insulating.
  • the first resin member 51 includes a resin such as epoxy resin, phenolic resin, polyphthalamide, silicone resin, synthetic rubber, natural rubber, or silicone rubber.
  • the first resin member 51 may include a reflective material with a refractive index significantly different from that of the above resin, such as a powder of at least one of titanium oxide, aluminum oxide, and magnesium oxide.
  • the first resin member 51 may include a filler such as silver, aluminum, or aluminum oxide as a reflective material with high reflectivity. This can improve the reflectivity of the first resin member 51.
  • the first resin member 51 is reflective, part of the excitation light emitted by the light-emitting element 3 is reflected by the first resin member 51 and enters the wavelength conversion member 4. This allows the excitation light to be concentrated on the part of the wavelength conversion member 4 that is surrounded by the first resin member 51 in a planar view. As a result, the wavelength conversion member 4 can emit illumination light with a smaller emission diameter and higher brightness. On the other hand, because high-brightness excitation light enters the wavelength conversion member 4, the amount of degradation due to heat increases.
  • the first resin member 51 can be formed as follows. That is, the first resin member 51 is applied in a ring shape before solidification and has a high viscosity, and then the first resin member before solidification is solidified using a curing agent, heat, light, or the like, thereby forming the first resin member 51.
  • solidification includes the hardening of the resin. Because the viscosity of the first resin member 51 before solidification is high, the first resin member 51 can be molded into a ring shape with high precision. In other words, the emission diameter can be adjusted with even greater precision.
  • the first resin member 51 may partially face the element electrode 71a in the thickness direction of the substrate 21. In other words, at least a portion of the first resin member 51 may overlap at least a portion of the element electrode 71a in a planar view. This allows the inner diameter of the first resin member 51 to be made smaller. As a result, the wavelength conversion member 4 can emit illumination light with an even smaller emission diameter and higher brightness. At least a portion of the first resin member 51 may overlap at least a portion of the element electrode 72a. In this case, the wavelength conversion member 4 can emit illumination light with an even smaller emission diameter and higher brightness.
  • the first heat dissipation member 6 is located between the substrate 2 and the wavelength conversion member 4.
  • the first heat dissipation member 6 is located outside the first resin member 51 in a planar view.
  • the first heat dissipation member 6 is not in contact with the first resin member 51 and is separated from the first resin member 51 in a planar view.
  • the first heat dissipation member 6 is adjacent to the first resin member 51 at an interval in a direction parallel to the first surface of the substrate 21.
  • the first heat dissipation member 6 may be located in a region avoiding the conductive pattern 7 in a planar view.
  • the first heat dissipation member 6 may have a plate-like shape.
  • the first heat dissipation member 6 may have a first surface 6a and a second surface 6b facing each other in the thickness direction of the substrate 21.
  • the first surface 6a and the second surface 6b may be flat surfaces.
  • a portion of the first surface 6a of the first heat dissipation member 6 may face the peripheral edge of the wavelength conversion member 4 in the thickness direction of the substrate 21.
  • the portion of the first surface 6a of the first heat dissipation member 6 may be in contact with the peripheral portion of the wavelength conversion member 4.
  • the peripheral portion of the wavelength conversion member 4 may include, for example, a region within 0.5 mm from the outer periphery of the wavelength conversion member 4.
  • the first heat dissipation member 6 allows heat from the wavelength conversion member 4 to be dissipated to the substrate portion 2. This reduces the risk of a decrease in luminous efficiency due to thermal quenching of the wavelength conversion member 4. Although brightness can be increased by making the first resin member 51 a reflective member, as described above, there is a risk that the degree of thermal degradation of the wavelength conversion member 4 may increase. For this reason, it is particularly effective to improve the heat dissipation properties of the phosphor in such lighting devices.
  • An adhesive member 23 may be positioned between the second surface 6b of the first heat dissipation member 6 and the insulating film 22 of the substrate portion 2.
  • the adhesive member 23 may be, for example, heat dissipation grease.
  • Heat dissipation grease may contain, for example, a resin such as silicone and a highly thermally conductive filler dispersed in the resin.
  • the first heat dissipation member 6 has a thermal conductivity higher than that of the wavelength conversion member 4.
  • the first heat dissipation member 6 may be made of a metal such as copper or aluminum, a ceramic such as alumina, or a single crystal such as sapphire.
  • the first heat dissipation member 6 may include heat dissipation members 61 and 62. In a plan view, the heat dissipation members 61 and 62 are located on opposite sides of the conductive pattern 7. The heat dissipation members 61 and 62 may have the same shape.
  • the first heat dissipation member 6 may have a substantially right-angled triangular shape, with a recess 6c formed on its hypotenuse.
  • the recess 6c may be formed adjacent to the element electrode 71a in a plan view with a gap therebetween.
  • the recess 6c may have an arc shape concentric with the element electrode 71a.
  • the area of the first heat dissipation member 6 in a plan view may be more than half the area of the substrate 21.
  • a filler 53 may be located in the region surrounded by the first resin member 51.
  • the filler 53 may tightly cover the light-emitting element 3.
  • the filler 53 may seal the light-emitting element 3.
  • the filler 53 may be bonded to the wavelength conversion member 4 or the first resin member 51.
  • the filler 53 has insulating properties and light-transmitting properties.
  • the transmittance of the filler 53 for excitation light may be 70% or more, 80% or more, 90% or more, or 95% or more.
  • the transmittance (maximum value) of the filler 53 for illumination light may be 70% or more, 80% or more, 90% or more, or 95% or more.
  • the filler 53 may be solid or liquid.
  • the filler 53 may be a resin such as an epoxy resin or a silicone resin. A portion of the filler 53 may be located outside the first resin member 51 between the wavelength conversion member 4 and the substrate unit 2. The filler 53 can protect the light emitting element 3 from external factors such as moisture.
  • the filler 53 can be formed as follows. That is, the filler 53 can be formed by applying the filler 53 before solidification to an area inside the first resin member 51 and then solidifying the filler 53 before solidification using a curing agent, heat, light, or the like.
  • the viscosity of the filler 53 before solidification may be lower than the viscosity of the first resin member 51 before solidification. In this way, the fluidity of the filler 53 before solidification is high, and the filler 53 before solidification can easily fill the space inside the first resin member 51.
  • the light-emitting element 3 emits excitation light. Specifically, a portion of the excitation light from the light-emitting element 3 passes through the filler 53 and enters the wavelength conversion member 4. The light-emitting element 3 generates heat as it emits the excitation light. The heat generated by the light-emitting element 3 mainly travels through the insulating film 22 to the substrate 21 and is released to the outside.
  • the wavelength conversion member 4 emits illumination light based on the excitation light.
  • the wavelength conversion member 4 generates heat as it emits this illumination light.
  • the heat generated by the wavelength conversion member 4 is transferred mainly to the substrate 21 or to the outside via the first heat dissipation member 6. Because the thermal conductivity of the first heat dissipation member 6 is higher than that of the wavelength conversion member 4, it can effectively dissipate heat from the wavelength conversion member 4. This reduces the degree of thermal deterioration of the wavelength conversion member 4. In other words, the light emitting device 1 can continue to emit illumination light with high brightness for a longer period of time.
  • first resin member 51 is reflective to excitation light
  • excitation light traveling from the light-emitting element 3 toward the first resin member 51 is reflected by the first resin member 51, and some of the excitation light may enter the wavelength conversion member 4.
  • Excitation light traveling from the light-emitting element 3 toward the element electrode 72a is reflected by the element electrode 72a, and as a result, some of the excitation light enters the wavelength conversion member 4.
  • Excitation light from the side of the light-emitting element 3 is reflected by the reflector 8, and may enter the wavelength conversion member 4 while being reflected by other members.
  • the excitation light is incident on the wavelength conversion member 4 in an incident region surrounded by the first resin member 51.
  • the excitation light is concentrated on the incident region of the wavelength conversion member 4. This allows the wavelength conversion member 4 to emit brighter illumination light with a smaller exit diameter.
  • the degree of thermal degradation of the wavelength conversion member 4 increases.
  • the first heat dissipation member 6, which is located outside the first resin member 51, can effectively dissipate heat from the wavelength conversion member 4. This allows the light-emitting device 1 to emit brighter illumination light with high reliability.
  • the first heat dissipation member 6 If metal is used as the material for the first heat dissipation member 6, its high thermal conductivity will further improve the heat dissipation performance of the light emitting device 1. Furthermore, as shown in Figure 2, if the first heat dissipation member 6 is positioned in an area that does not overlap with the conductive pattern 7 in a planar view, insulation between the conductive first heat dissipation member 6 and the conductive pattern 7 can be more reliably ensured.
  • the excitation light from the light-emitting element 3 may be reflected by the side surface of the first heat dissipation member 6 and enter the wavelength conversion member 4.
  • the excitation light may also enter the area of the wavelength conversion member 4 near the side surface of the first heat dissipation member 6.
  • the incident area of the wavelength conversion member 4 becomes wider, which results in an increase in the emission diameter of the illumination light and a decrease in the brightness of the illumination light.
  • the first resin member 51 surrounds the light-emitting element 3 at a position closer to the light-emitting element 3 than the first heat dissipation member 6 in a planar view.
  • the element electrodes 71a and 72a are also close to the light-emitting element 3 at a position closer to the light-emitting element 3, the proximity of the insulating first resin member 51 to the element electrodes 71a and 72a does not lead to electrical problems such as discharge.
  • the first resin member 51 can be positioned directly above the element electrode 71a.
  • the first resin member 51 is reflective, the first resin member 51 can narrow the incident area of the wavelength conversion member 4, thereby increasing the brightness of the illumination light while reducing the emission diameter of the illumination light.
  • Fig. 3 is a cross-sectional view schematically showing an example of a part of the configuration of the light emitting device 1 according to the second embodiment.
  • Fig. 4 is a plan view schematically showing an example of a part of the configuration of the light emitting device 1 according to the second embodiment.
  • the light emitting device 1 according to the second embodiment differs from the light emitting device 1 according to the first embodiment in the size of the wavelength conversion member 4 and the presence or absence of the intermediate member 5.
  • the indirect member 5 is located between the wavelength conversion member 4 and the first resin member 51. It can also be said that the indirect member 5 is located between the wavelength conversion member 4 and the first heat dissipation member 6.
  • the indirect member 5 may have a plate-like shape.
  • the indirect member 5 has a first surface 5a and a second surface 5b that face each other in the thickness direction. As shown in FIG. 4, the indirect member 5 may have a rectangular shape in a planar view. As an example, the indirect member 5 may have a square shape. One side of the indirect member 5 may be parallel to one side of the substrate 21.
  • At least one of the first resin member 51 and the filler 53 may be in contact with the second surface 5b of the intermediate member 5. At least one of the first resin member 51 and the filler 53 may be bonded to the second surface 5b of the intermediate member 5.
  • the peripheral edge of the lower surface of the intermediate member 5 faces a part of the upper surface of the first heat dissipation member 6 in the thickness direction. This peripheral edge of the intermediate member 5 may be in contact with this part of the first heat dissipation member 6, and a highly thermally conductive resin such as thermal grease may be located between the intermediate member 5 and the first heat dissipation member 6.
  • the peripheral edge of the intermediate member 5 may include an area within 1 mm from the outer periphery of the intermediate member 5.
  • the indirect member 5 is translucent to the excitation light.
  • the transmittance of the indirect member 5 to the excitation light may be, for example, 80% or more, 90% or more, 95% or more, or 98% or more.
  • the indirect member 5 may be translucent to the illumination light.
  • the transmittance of the indirect member 5 to the illumination light may be, for example, 80% or more, 90% or more, 95% or more, or 98% or more.
  • the indirect member 5 is formed, for example, from a transparent ceramic such as sapphire, glass, or crystallized glass.
  • the thermal conductivity of the indirect member 5 is higher than that of air and may be higher than that of the wavelength conversion member 4. If the indirect member 5 is sapphire, the thermal conductivity of the indirect member 5 is sufficiently higher than that of the wavelength conversion member 4. The thermal conductivity of the indirect member 5 may be lower than that of the first heat dissipation member 6.
  • the heat generated in the wavelength conversion member 4 is transferred via the intermediate member 5, which has high thermal conductivity, to the first heat dissipation member 6, which also has high thermal conductivity. This allows the temperature of the wavelength conversion member 4 to be further reduced.
  • the wavelength conversion member 4 is located on the first surface 5a of the intermediate member 5. As shown in FIG. 4, the wavelength conversion member 4 may have a circular shape in a planar view. The diameter of the wavelength conversion member 4 is shorter than one side of the intermediate member 5. In a planar view, the periphery of the wavelength conversion member 4 may be located outside the inner periphery of the first resin member 51. In other words, the diameter of the wavelength conversion member 4 may be larger than the inner diameter of the first resin member 51. This allows the excitation light to more appropriately enter the wavelength conversion member 4. Conversely, the amount of excitation light that does not enter the wavelength conversion member 4 can be reduced.
  • the periphery of the wavelength conversion member 4 may be located inside the outer periphery of the first resin member 51.
  • the diameter of the wavelength conversion member 4 may be smaller than the outer diameter of the first resin member 51. In this case, the size of the wavelength conversion member 4 can be reduced, which allows the light emitting device 1 to be made more compact and the cost of the light emitting device 1 to be reduced.
  • the wavelength conversion member 4 may contain multiple types of phosphor particles 41 and a binder layer 42. This can improve the wavelength conversion performance (i.e., luminous efficiency) of the wavelength conversion member 4.
  • the breaking strength of the wavelength conversion member 4 alone is not very high.
  • the wavelength conversion member 4 may be fixed to the intermediate member 5.
  • the binder layer 42 of the wavelength conversion member 4 may be bonded to the first surface 5a of the intermediate member 5.
  • the breaking strength of the intermediate member 5 may be higher than that of the wavelength conversion member 4. For example, if the intermediate member 5 is sapphire, the breaking strength of the intermediate member 5 is sufficiently higher than that of the wavelength conversion member 4.
  • the breaking strength can be evaluated as bending strength using a method that partially complies with JIS R1601 or ISO 23242. For example, if the intermediate member 5 is sapphire, the bending strength can reach 960 MPa. On the other hand, the bending strength of the wavelength conversion member 4 can reach 50 MPa. Therefore, the reliability of the light emitting device 1 can be improved compared to the first embodiment.
  • Third Embodiment 5 is an exploded perspective view schematically illustrating an example of the configuration of an illumination device 10 according to the third embodiment.
  • the illumination device 10 includes a light-emitting device 1, a second heat dissipation member 91, a heat sink 92, and a cylindrical body 93.
  • the heat sink 92 has a first surface 92a that is larger than the second surface 21b of the substrate 21.
  • the first surface 92a of the heat sink 92 may be in contact with the second surface 21b of the substrate 21, or a highly thermally conductive resin such as thermal grease may be positioned between the heat sink 92 and the substrate 21.
  • the thermal conductivity of the heat sink 92 is higher than that of the wavelength conversion member 4.
  • the heat sink 92 is formed from a metal such as copper or aluminum.
  • the heat sink 92 may include a plate portion 921 and a plurality of fins 922.
  • the plate portion 921 has a first surface 92a.
  • a plurality of fins 922 are provided on a second surface 92b of the plate portion 921, which is opposite the first surface 92a.
  • the second surface 92b is the surface that faces the first surface 92a in the thickness direction of the plate portion 921.
  • the multiple fins 922 protrude from the second surface 92b of the plate portion 921. This can improve the heat dissipation properties of the heat sink 92.
  • the second heat dissipation member 91 is in contact with the first heat dissipation member 6 of the light-emitting device 1.
  • the second heat dissipation member 91 may have a plate-like shape.
  • An opening 91a is formed in the center of the second heat dissipation member 91.
  • the opening 91a penetrates the second heat dissipation member 91 in its thickness direction.
  • the opening 91a may have a circular shape in a planar view.
  • the second heat dissipation member 91 is attached to the light-emitting device 1 so that the light-emitting element 3 and the wavelength conversion member 4 are located within the opening 91a in a planar view.
  • the opening 91a of the second heat dissipation member 91 may be larger than the outer periphery of the first resin member 51. In other words, the diameter of the opening 91a of the second heat dissipation member 91 may be larger than the outer diameter of the first resin member 51. In a planar view, the opening 91a may be larger than the wavelength conversion member 4. Illumination light from the wavelength conversion member 4 passes through the opening 91a of the second heat dissipation member 91.
  • the second heat dissipation member 91 may be in partial contact with the first surface 6a and side surfaces of the first heat dissipation member 6, or a highly thermally conductive resin such as thermal grease may be positioned between the second heat dissipation member 91 and the first heat dissipation member 6.
  • the second heat dissipation member 91 may be in partial contact with the first surface 5a and the side surface 5c of the intermediate member 5.
  • a highly thermally conductive resin such as thermal grease may be located between the second heat dissipation member 91 and the intermediate member 5.
  • the second heat dissipation member 91 may protrude outward beyond the substrate 21.
  • the portion of the second heat dissipation member 91 that protrudes outward beyond the substrate 21 may be in contact with the first surface 92a of the heat sink 92.
  • a highly thermally conductive resin such as thermal grease may be positioned between the second heat dissipation member 91 and the heat sink 92.
  • the outer periphery of the second heat dissipation member 91 may be partially circular, and notches 91b may be formed at positions corresponding to the corners of the substrate 21.
  • the second heat dissipation member 91 may have a petal-like shape in a plan view.
  • a second heat dissipation member 91 having such a complex shape may be manufactured using, for example, a predetermined mold.
  • the second heat dissipation member 91 may also be called a sleeve.
  • the external electrode 71b and the external electrode 72b are exposed from the second heat dissipation member 91 at the corresponding notches 91b.
  • Wiring 85 is connected to the external electrode 71b, and wiring 86 is connected to the external electrode 72b.
  • the thermal conductivity of the second heat dissipation member 91 is higher than that of air.
  • the thermal conductivity of the second heat dissipation member 91 may be higher than that of the wavelength conversion member 4.
  • the second heat dissipation member 91 may be made of, for example, a metal such as aluminum, a ceramic such as alumina, or a resin or rubber.
  • the resin or rubber may contain a highly thermally conductive filler.
  • the highly thermally conductive filler may contain at least one of silver, aluminum, aluminum oxide, and graphene, which have a higher thermal conductivity than the wavelength conversion member 4.
  • the cylindrical body 93 may include a first arc portion 931 and a second arc portion 932.
  • the first arc portion 931 and the second arc portion 932 have shapes obtained by dividing the cylindrical body 93 into two in the circumferential direction.
  • the first arc portion 931 and the second arc portion 932 are joined in the circumferential direction to form the cylindrical body 93.
  • the first arc portion 931 and the second arc portion 932 are shown separated from each other.
  • a fixing member such as a locking portion for joining the first arc portion 931 and the second arc portion 932 to each other may be attached to the first arc portion 931 and the second arc portion 932.
  • the cylindrical body 93 is fixed to the heat sink 92. One peripheral end of the cylindrical body 93 is connected to the first surface 92a of the heat sink 92.
  • the cylindrical body 93 houses the light-emitting device 1.
  • the inner peripheral surface of the cylindrical body 93 is in contact with the outer peripheral surface of the second heat dissipation member 91.
  • the cylindrical body 93 may have a cylindrical shape.
  • the inner peripheral surface of the cylindrical body 93 can press against the outer peripheral surface of the second heat dissipation member 91. This improves the adhesion between the cylindrical body 93 and the second heat dissipation member 91. The higher the adhesion, the easier it is for heat to be transferred from the second heat dissipation member 91 to the cylindrical body 93.
  • the thermal conductivity of the cylindrical body 93 may be higher than that of air and higher than that of the wavelength conversion member 4.
  • the cylindrical body 93 may be made of a metal such as aluminum.
  • the second heat dissipation member 91 may have four notches 91b.
  • the four notches 91b are formed at equally spaced positions in the circumferential direction, exposing four corners of the substrate 21, respectively.
  • Two diagonally positioned notches 91b expose the external electrodes 71b and 72b, and wiring 85 and wiring 86 are connected to the external electrodes 71b and 72b, respectively.
  • the remaining two notches 91b are not necessarily required, but may provide the technical significance described below.
  • the above-described elastic deformation is particularly easy when the second heat dissipation member 91 is made of an elastic material such as resin or rubber. To improve adhesion, it is sufficient to form three or more notches 91b, and five or more notches 91b may also be formed.
  • the cylindrical body 93 has a lead-out opening 93a for leading out the wiring 85 and a lead-out opening 93b for leading out the wiring 86.
  • An optical system (not shown), such as a lens, may be located inside the cylindrical body 93.
  • the optical system may be positioned alongside the light-emitting device 1 in the thickness direction of the substrate 21. Illumination light from the wavelength conversion member 4 may be emitted to the outside through the optical system.
  • the cylindrical body 93 may also be called a lens barrel.
  • the heat generated by the wavelength conversion member 4 passes through the first heat dissipation member 6 and the second heat dissipation member 91 in this order, and is then transferred to the heat sink 92 and the cylindrical body 93. This further improves the heat dissipation performance of the light emitting device 1.
  • the second heat dissipation member 91 contacts the first surface 6a and the side surface of the first heat dissipation member 6. This allows the second heat dissipation member 91 to contact the first heat dissipation member 6 over a wider area, and to receive heat from the first heat dissipation member 6 over a wider area. This therefore further improves the heat dissipation performance of the light emitting device 1.
  • the tubular body 93 has a cylindrical shape, but this is not necessarily limited to this.
  • the tubular body 93 may also have a polygonal tubular shape.
  • the outer peripheral surface of the second heat dissipation member 91 may have a polygonal shape that partially follows the inner peripheral surface of the tubular body 93.
  • Fourth Embodiment 6 is a cross-sectional view schematically illustrating an example of a portion of the configuration of a light emitting device 1 according to the fourth embodiment.
  • the light emitting device 1 according to the fourth embodiment differs from the light emitting device 1 according to the first or second embodiment in the presence or absence of a second resin member 52.
  • the second resin member 52 is located between the first resin member 51 and the first heat dissipation member 6.
  • the thermal conductivity of the second resin member 52 is higher than that of air.
  • the thermal conductivity of the second resin member 52 may be higher than that of the first resin member 51 or may be higher than that of the wavelength conversion member 4.
  • the thermal conductivity of the second resin member 52 may be lower than that of the first heat dissipation member 6.
  • the second resin member 52 may be a resin containing a highly thermally conductive filler.
  • the highly thermally conductive filler contains at least one of silver, aluminum, aluminum oxide, and graphene, which have a higher thermal conductivity than the wavelength conversion member 4.
  • the resin may be, for example, an epoxy resin or a silicone resin.
  • the second resin member 52 may be in contact with the intermediate member 5, the first heat dissipation member 6, and the reflector 8. If the intermediate member 5 is not provided, the second resin member 52 may be in contact with the wavelength conversion member 4. Referring to FIG. 2, the second resin member 52 may fill the space between the first resin member 51 and the first heat dissipation member 6 at least in the recess 6c. This allows the heat generated by the wavelength conversion member 4 to be effectively transferred to the first heat dissipation member 6 via the intermediate member 5 and the second resin member 52.
  • the second resin member 52 is in contact with the first resin member 51, the second resin member 52 is likely to come into contact with a wider area of the intermediate member 5. This allows heat from the intermediate member 5 to be transferred more effectively to the first heat dissipation member 6.
  • the second resin member 52 is in contact with the reflector 8, the second resin member 52 is likely to come into contact with the entire side surface of the first heat dissipation member 6. This also allows heat from the wavelength conversion member 4 to be transferred more effectively to the first heat dissipation member 6.
  • the second resin member 52 may be bonded to at least one of the intermediate member 5, the first resin member 51, the first heat dissipation member 6, and the reflector 8.
  • the second resin member 52 can be formed as follows. That is, the second resin member 52 before solidification is applied between the first resin member 51 and the first heat dissipation member 6, and the second resin member 52 before solidification is solidified using a curing agent, heat, or light, thereby forming the second resin member 52.
  • the viscosity of the second resin member 52 before solidification is lower than the viscosity of the first resin member 51 before solidification. This makes it easier for the second resin member 52 to fill the space between the first resin member 51 and the first heat dissipation member 6.
  • the second resin member 52 may be reflective to the illumination light.
  • a reflective material such as silver, aluminum, or aluminum oxide may be used as the filler of the second resin member 52.
  • the reflectance (maximum value) of the second resin member 52 to the illumination light may be, for example, 50% or more, 60% or more, 70% or more, 80% or more, or 90% or more. This allows the illumination light incident on the second resin member 52 from the wavelength conversion member 4 to be reflected.
  • the illumination light emitted from the side surface of the wavelength conversion member 4 may pass through the indirect member 5 and enter the second resin member 52.
  • the second resin member 52 reflects the illumination light. This increases the amount of illumination light emitted from the light emitting device 1.
  • the emission diameter of the light-emitting device 1 may widen.
  • the second resin member 52 may be absorbing illumination light.
  • the second resin member 52 may be a black resin.
  • graphene or aluminum oxide may be used as the filler for the second resin member 52.
  • the absorption rate (maximum value) of the illumination light by the second resin member 52 may be, for example, 50% or more, 60% or more, 70% or more, 80% or more, or 90% or more. This allows the second resin member 52 to effectively absorb illumination light incident on the second resin member 52 from the wavelength conversion member 4. This reduces the emission diameter of the light-emitting device 1.
  • Fig. 7 is a cross-sectional view schematically showing an example of a portion of the configuration of the light-emitting device 1 according to the fifth embodiment.
  • Fig. 8 is a plan view schematically showing an example of a portion of the configuration of the light-emitting device 1 according to the fifth embodiment.
  • the light-emitting device 1 according to the fifth embodiment differs from the light-emitting devices 1 according to the first to fourth embodiments in the presence or absence of an electronic component 35.
  • the electronic component 35 is located between the substrate 2 and the wavelength conversion member 4, and in the example of Fig. 7, it is located between the reflector 8 and the intermediate member 5. Furthermore, the electronic component 35 is located between the first resin member 51 and the first heat dissipation member 6 in a plan view.
  • the electronic component 35 may be connected to the conductive pattern 7. As shown in FIG. 8, a first end of the electronic component 35 may be connected to the element electrode 71a, and a second end of the electronic component 35 may be connected to the wiring 72c. In this case, the electronic component 35 is connected in parallel to the light-emitting element 3.
  • the electronic component 35 may be, for example, a protective element that protects the light-emitting element 3.
  • the electronic component 35 may be a Zener diode. In this case, the electronic component 35 can protect the light-emitting element 3 from overvoltage or reverse voltage.
  • the first end of the electronic component 35 may be connected to the arc-shaped end of the element electrode 71a, and the second end of the electronic component 35 may be connected to the wiring 72c near the element electrode 72a. This allows the electronic component 35 to be positioned close to the light-emitting element 3, thereby protecting the light-emitting element 3 with greater precision.
  • the electronic component 35 may be a light-emitting element (corresponding to an example of a second light-emitting element).
  • the electronic component 35 may be a semiconductor light-emitting element, and more specifically, an LED element.
  • the electronic component 35 may emit light of a wavelength different from the excitation light of the light-emitting element 3.
  • An example of the wavelength may be the same as that of the sixth embodiment described below.
  • the second resin member 52 may cover and adhere to the electronic component 35.
  • the second resin member 52 may seal the electronic component 35.
  • the electronic component 35 can be protected from external factors such as moisture. If the electronic component 35 is a light-emitting element, the second resin member 52 is translucent to the light emitted by the electronic component 35.
  • Sixth Embodiment 9 is a plan view schematically showing a first example of a portion of the configuration of the light emitting device 1 according to the sixth embodiment.
  • the light emitting device 1 according to the sixth embodiment differs from the light emitting devices 1 according to the first to fifth embodiments in terms of the number of light emitting elements 3.
  • the light emitting device 1 according to the sixth embodiment includes a plurality of light emitting elements 3.
  • the plurality of light emitting elements 3 are surrounded by the first resin member 51 in a planar view.
  • the plurality of light emitting elements 3 are located within a region surrounded by the inner periphery of the first resin member 51 in a planar view. All of the plurality of light emitting elements 3 may be included within this region, and the plurality of light emitting elements 3 may not protrude from this region.
  • multiple light-emitting elements 3 may be connected in parallel to one another.
  • light-emitting elements 3A to 3D are shown as the light-emitting elements 3.
  • Light-emitting elements 3A to 3D are located on element electrodes 72a of the first conductive pattern 71.
  • Light-emitting elements 3A to 3D may be arranged in a matrix in plan view.
  • each of light-emitting elements 3A to 3D has a second element electrode on the second surface 3b. The second element electrode of each of light-emitting elements 3A to 3D is electrically connected to element electrode 72a.
  • Each of the light-emitting elements 3A to 3D has a first element electrode on the first surface 3a, as in the first to fifth embodiments.
  • the first element electrode of the light-emitting element 3A is connected to the element electrode 71a of the first conductive pattern 71 via wire 31A
  • the first element electrode of the light-emitting element 3B is connected to the element electrode 71a via wire 31B
  • the first element electrode of the light-emitting element 3C is connected to the element electrode 71a via wire 31C
  • the first element electrode of the light-emitting element 3D is connected to the element electrode 71a via wire 31D.
  • FIG. 10 is a plan view schematically illustrating a second example of a portion of the configuration of the light-emitting device 1 according to the sixth embodiment. As shown in FIG. 10, multiple light-emitting elements 3 may be connected in series. In the example of FIG. 10, light-emitting elements 3A to 3D are also shown as the light-emitting elements 3. In the example of FIG. 10, the light-emitting device 1 includes a first conductive pattern 71, a second conductive pattern 72, an element electrode 73, an element electrode 74, and an element electrode 75.
  • the element electrode 72a, the element electrode 73, the element electrode 74, and the element electrode 75 of the second conductive pattern 72 are located within a region surrounded by the inner periphery of the first resin member 51 in a plan view. These may be located on the insulating film 22, or may be arranged in a matrix.
  • Light-emitting element 3A is located on element electrode 72a, and the second element electrode of light-emitting element 3A is electrically connected to element electrode 72a.
  • Light-emitting element 3B is located on element electrode 73, and the second element electrode of light-emitting element 3B is connected to element electrode 73.
  • light-emitting element 3C is located on element electrode 74, and the second element electrode of light-emitting element 3C is connected to element electrode 74, and light-emitting element 3D is located on element electrode 75, and the second element electrode of light-emitting element 3D is connected to element electrode 75.
  • the first element electrode of light-emitting element 3A is connected to element electrode 73 via wire 31A
  • the first element electrode of light-emitting element 3B is connected to element electrode 74 via wire 31B
  • the first element electrode of light-emitting element 3C is connected to element electrode 75 via wire 31C
  • the first element electrode of light-emitting element 3D is connected to element electrode 71a via wire 31D.
  • the multiple light-emitting elements 3 may have the same structure. That is, the multiple light-emitting elements 3 may output excitation light in the same wavelength range.
  • at least one of the multiple light-emitting elements 3 may have a structure different from the other light-emitting elements 3. That is, at least one of the light-emitting elements 3 (corresponding to the second light-emitting element) may emit light having a peak wavelength in a wavelength range different from the wavelength range of light emitted by the other light-emitting elements 3 (corresponding to the first light-emitting element).
  • light-emitting element 3D may emit light having a peak wavelength in a wavelength range different from that of light-emitting elements 3A to 3C.
  • light-emitting elements 3A to 3C emit excitation light with a blue wavelength.
  • Wavelength conversion member 4 contains YAG phosphor particles that emit fluorescence based on the excitation light.
  • a light-emitting element that emits red light can be used for light-emitting element 3D.
  • Light-emitting element 3D may be a semiconductor light-emitting element, such as an LED element. The light emitted by light-emitting element 3D does not need to be significantly converted by wavelength conversion member 4. In other words, light-emitting element 3D may emit light that is less absorbed by wavelength conversion member 4 than the excitation light emitted by light-emitting elements 3A to 3C.
  • the red light from light-emitting element 3D can be emitted to the outside, mainly passing through filler 53 and wavelength conversion member 4.
  • the light-emitting element 3D can supplement this with red.
  • the light-emitting device 1 can emit white light supplemented with red as illumination light. In other words, the color rendering properties of the illumination light can be improved.
  • Seventh Embodiment 11 is a plan view schematically illustrating an example of a portion of the configuration of a light-emitting device 1 according to the seventh embodiment.
  • the light-emitting device 1 according to the seventh embodiment includes a plurality of light-emitting elements 3.
  • the plurality of light-emitting elements 3 are surrounded by a first resin member 51 in a planar view. That is, the plurality of light-emitting elements 3 are located within a region surrounded by the inner peripheral edge of the first resin member 51 in a planar view. All of the plurality of light-emitting elements 3 may be included within the region, or the plurality of light-emitting elements 3 may not protrude from the region.
  • a voltage different from the voltage applied to one of the other light-emitting elements 3 is input to one of the light-emitting elements 3 (corresponding to an example of a second light-emitting element).
  • the light-emitting device 1 further includes a third conductive pattern 77.
  • the third conductive pattern 77 includes an element electrode 77a, an external electrode 77b, and wiring 77c.
  • the element electrode 77a may have an arc shape in a plan view and may be adjacent to the element electrode 72a of the second conductive pattern 72 at an interval.
  • the central angle of the element electrode 77a may be less than 180 degrees and may be concentric with the element electrode 71a of the first conductive pattern 71 and the element electrode 72a of the second conductive pattern 72.
  • the central angle of the element electrode 71a of the first conductive pattern 71 may also be less than 180 degrees, and the element electrode 71a may be aligned with the element electrode 77a at an interval in the circumferential direction.
  • the external electrode 77b may be located at a corner of the substrate 21 where the external electrodes 71b and 72b are not provided.
  • the external electrode 71b may have a rectangular shape in a plan view.
  • One end of the wiring 87 is connected to the external electrode 71b.
  • Wiring 77c electrically connects element electrode 77a and external electrode 77b.
  • Wiring 77c has a strip shape and may extend linearly from element electrode 77a to external electrode 77b.
  • Wiring 72c extends, for example, along a diagonal line of substrate 21.
  • the diameter of element electrode 77a may be larger than the width of wiring 77c, and the diagonal length of external electrode 77b may be larger than the width of wiring 72c.
  • light-emitting elements 3A to 3D are shown as the multiple light-emitting elements 3. As shown in FIG. 11, light-emitting elements 3A to 3D may be positioned on element electrode 72a, and the second element electrodes of light-emitting elements 3A to 3D may be electrically connected to element electrode 72a. Light-emitting elements 3A to 3D may be arranged in a matrix.
  • the first element electrode of light-emitting element 3B (an example of a first light-emitting element) may be connected to element electrode 71a (an example of a first electrode) via wire 31B, and the first element electrode of light-emitting element 3C (an example of a first light-emitting element) may be connected to element electrode 71a via wire 31C.
  • the first element electrode of light-emitting element 3A (an example of a second light-emitting element) may be connected to element electrode 77a (an example of a second electrode) via wire 31A, and the first element electrode of light-emitting element 3D (an example of a second light-emitting element) may be connected to element electrode 77a via wire 31D.
  • FIG. 12 is a diagram schematically illustrating an example of the electrical configuration of the light-emitting device 1.
  • wiring 85 and wiring 86 may be connected to a first power supply 81
  • wiring 86 and wiring 87 may be connected to a second power supply 82.
  • Wiring 86 may be grounded.
  • the first power supply 81 and the second power supply 82 may output different voltages.
  • Each of the first power supply 81 and the second power supply 82 may include a switching power supply circuit (not shown).
  • the first power supply 81 and the second power supply 82 may output a variable DC voltage.
  • the control unit 80 may control the output voltages of the first power supply 81 and the second power supply 82.
  • the control unit 80 is a control circuit and includes, for example, a central processing unit (CPU) and a memory unit.
  • the memory unit includes non-transitory recording media that can be read by the CPU, such as read-only memory (ROM) and random access memory (RAM).
  • the memory unit stores, for example, programs for controlling the first power supply 81 and the second power supply 82.
  • the various functions of the control unit 80 are realized when the CPU executes the programs in the memory unit.
  • the control unit 80 may control the first power supply 81 using a predetermined first target value.
  • the first target value is a target value for the first power supply 81 regarding voltage, current, or power.
  • the first target value may be a value for causing light-emitting elements 3B and 3C to emit a predetermined amount of light.
  • the control unit 80 may control the second power supply 82 using a predetermined second target value.
  • the second target value is a target value for the second power supply 82 regarding voltage, current, or power.
  • the second target value may be a value for causing light-emitting elements 3A and 3D to emit a predetermined amount of light. Therefore, each of the first power supply 81 and the second power supply 82 can output a voltage or current appropriate for each light-emitting element 3.
  • Light-emitting elements 3B and 3C emit a first light
  • light-emitting elements 3A and 3D emit a second light having a wavelength spectrum different from that of the first light.
  • light-emitting elements 3B and 3C emit purple excitation light
  • light-emitting elements 3A and 3D emit blue light.
  • the wavelength conversion member 4 includes, for example, the red, green, and blue phosphors already described.
  • Figure 13 is a graph showing an example of the wavelength dependence of the absorptance of phosphors.
  • Graph G1 shows the wavelength dependence for the blue phosphor
  • graph G2 shows the wavelength dependence for the red phosphor
  • graph G3 shows the wavelength dependence for the green phosphor.
  • the wavelength dependence of the blue phosphor is greater than the wavelength dependence of the red and blue phosphors.
  • the peak wavelength of the excitation light from light-emitting element 3B and light-emitting element 3C can vary from one element to another due to manufacturing variations, etc. Therefore, if the content of blue phosphor in wavelength conversion member 4 is constant, variations between individual light-emitting elements 3 will cause variations in the illumination light from wavelength conversion member 4. In other words, the amount of blue component in the illumination light will fluctuate depending on the individual differences between light-emitting element 3B and light-emitting element 3C.
  • Control unit 80 may control second power supply 82 using a second target value that corresponds to individual variations in light-emitting elements 3B and 3C.
  • This second target value is set in advance, for example, through experiments or simulations.
  • control unit 80 controls first power supply 81 and second power supply 82 to cause light-emitting elements 3A to 3D to emit light, and sets a second target value for the output of second power supply 82 so that the evaluation value of the illumination light of light-emitting device 1 falls within a predetermined target range.
  • the evaluation value may include at least one of color temperature and color deviation.
  • the second target value is stored in advance in a storage unit (e.g., a memory) of control unit 80.
  • the wavelength conversion member 4 includes a first phosphor 41a that emits a first fluorescence (e.g., blue fluorescence) and a second phosphor 41b that emits a second fluorescence (e.g., red or green fluorescence) (see also Figure 1).
  • the wavelength dependence of the absorption rate of the second phosphor 41b for excitation light is greater than the wavelength dependence of the first phosphor 41a.
  • the light emitting device 1 includes a light emitting element 3 that emits excitation light for the wavelength conversion member 4 and a light emitting element 3 that emits light of the same color as the second fluorescence.
  • light of the same color refers to light having a peak wavelength closer to the wavelength of the second fluorescence of the second phosphor 41b than to the wavelength of the first fluorescence of the first phosphor 41a.
  • the light emitting element 3 that emits light of the same color as the second phosphor 41b is powered by a second power source 82, and the light emitting element 3 that emits excitation light is powered by a first power source 81.
  • the control unit 80 controls the second power source 82 using a second target value that corresponds to the wavelength variation of the excitation light. This allows individual variations in the light-emitting elements 3 that emit excitation light to be absorbed, allowing the light-emitting device 1 to emit more appropriate illumination light.
  • the first element electrode and the second element electrode of the light-emitting element 3 are located on the first surface 3 a and the second surface 3 b of the light-emitting element 3, respectively.
  • this embodiment is not necessarily limited to this.
  • the first element electrode and the second element electrode may be located on the second surface 3 b of the light-emitting element 3.
  • FIG. 14 is a cross-sectional view schematically showing a first example of a portion of the configuration of a light-emitting device 1 according to the eighth embodiment.
  • the second surface 3b of the light-emitting element 3 is located across the element electrodes 71a and 72a.
  • a first element electrode and a second element electrode are located on the second surface 3b of the light-emitting element 3, with the first element electrode connected to the element electrode 71a and the second element electrode connected to the element electrode 72a.
  • the first element electrode is connected to the element electrode 71a and the second element electrode is connected to the element electrode 72a by an electrode material such as solder.
  • Figure 15 is a cross-sectional view schematically showing a second example of a portion of the configuration of the light-emitting device 1 according to the eighth embodiment.
  • the light-emitting element 3 is formed on the substrate 21. That is, the second surface 3b of the light-emitting element 3 is in contact with the substrate 21.
  • the insulating film 22 may be formed in the same layer as the light-emitting element 3, or may be adjacent to the light-emitting element 3 in a direction parallel to the first surface of the substrate 21.
  • the insulating film 22 may be in contact with the side surface of the light-emitting element 3 and the substrate 21. In this case, it can be said that the substrate portion 2 on which the light-emitting element 3 is located does not include the insulating film 22.
  • the conductive pattern 7 is formed on the insulating film 22. In a plan view, the conductive pattern 7 is located in an area that avoids the light-emitting element 3.
  • the first element electrode on the first surface 3a of the light-emitting element 3 is connected to the element electrode 71a of the first conductive pattern 71 via wire 31A
  • the second element electrode on the first surface 3a of the light-emitting element 3 is connected to the element electrode 72a of the second conductive pattern 72 via wire 31B.
  • the light-emitting element 3 can also emit excitation light from the second surface 3b. Therefore, the substrate 21 may be reflective to the excitation light.
  • the reflectance of the substrate 21 to the excitation light may be, for example, 50% or more, 60% or more, 70% or more, 80% or more, 90% or more, or 95% or more.
  • the substrate 21 may be reflective to the illumination light.
  • the reflectance (maximum value) of the substrate 21 to the illumination light may be, for example, 50% or more, 60% or more, 70% or more, 80% or more, 90% or more, or 95% or more.
  • the thermal conductivity of the substrate 21 may be higher than that of the wavelength conversion member 4.
  • the substrate 21 may be made of, for example, aluminum. Miro (registered trademark) material can be used for the substrate 21. Because the substrate 21 reflects at least one of the excitation light and the illumination light in this way, the reflective material 8 may not be provided.
  • Fig. 16 is a cross-sectional view schematically showing a first example of the configuration of the light-emitting device 1 according to the ninth embodiment.
  • the light-emitting device 1 according to the first example of the ninth embodiment differs from the light-emitting devices 1 according to the first to eighth embodiments in the presence or absence of a first heat-transfer member 561.
  • Fig. 17 is a perspective view schematically showing an example of the configuration of the intermediate member 5 and the first heat-transfer member 561 according to the first example of the ninth embodiment.
  • the first heat transfer member 561 is located on the opposite side of the intermediate member 5 from the wavelength conversion member 4 and is in contact with the second surface 5b of the intermediate member 5.
  • the intermediate member 5 is formed, for example, from a transparent ceramic.
  • the transparent ceramic include at least one of YAG (Y3Al5O12), Y2O3 , Sc2O3 , Lu2O3 , and sapphire .
  • the thermal conductivity of these transparent ceramics at room temperature is more than 10 times higher than that of glass at room temperature (approximately 1.1 W/m ⁇ K).
  • the thermal conductivity of sapphire is approximately 41 W/m ⁇ K, approximately 40 times higher than that of glass. Therefore, using sapphire as the material for the intermediate member 5 allows for more effective transfer of heat from the wavelength conversion member 4.
  • the thermal conductivity of the first heat transfer member 561 is higher than that of the wavelength conversion member 4 and is also higher than that of the indirect member 5.
  • the thermal conductivity of the first heat transfer member 561 may be more than twice, or even more than five times, that of the indirect member 5.
  • the transmittance of the first heat transfer member 561 for excitation light may be lower than that of the indirect member 5.
  • the transmittance of the first heat transfer member 561 for excitation light may be, for example, 10% or less, 5% or less, 2% or less, or 1% or less.
  • the transmittance (maximum value) of the first heat transfer member 561 for illumination light may also be, for example, 10% or less, 5% or less, 2% or less, or 1% or less.
  • the transmittance of the first heat transfer member 561 may be low, the freedom in selecting the material for the first heat transfer member 561 can be improved. Therefore, a material with higher thermal conductivity can be used for the first heat transfer member 561.
  • metal may be used as the material of the first heat transfer member 561.
  • Specific examples of materials that may be used for the first heat transfer member 561 include silver, copper, gold, aluminum, zinc, chromium, nickel, and tin, or an alloy containing at least one of these.
  • the first heat transfer member 561 may have a plate-like or sheet-like shape.
  • the first heat transfer member 561 includes a first portion 571 and a second portion 572.
  • the first portion 571 is the portion of the first heat transfer member 561 that faces the first heat dissipation member 6 in the thickness direction of the substrate 21. In other words, the first portion 571 is the portion that overlaps with the first heat dissipation member 6 in a planar view.
  • the second portion 572 is a portion of the first heat transfer member 561 that does not face the first heat dissipation member 6 in the thickness direction of the substrate 21. In other words, the second portion 572 is a portion that does not overlap the first heat dissipation member 6 in a planar view.
  • the second portion 572 is connected to the first portion 571. In other words, the second portion 572 is continuous with the first portion 571.
  • the second portion 572 is positioned in a state that protrudes from the first heat dissipation member 6 in a planar view. As shown in FIG. 16 , at least a portion of the second portion 572 is positioned closer to the first resin member 51 than the first heat dissipation member 6.
  • the first heat transfer member 561 may face both the heat dissipation member 61 and the heat dissipation member 62. That is, the first heat transfer member 561 may have, as the first portion 571, a portion 5711 facing the heat dissipation member 61 and a portion 5712 facing the heat dissipation member 62. The second portion 572 may be located between portions 5711 and 5712.
  • the first heat transfer member 561 has a first opening 56a in a region facing at least a portion of the wavelength conversion member 4 in the thickness direction of the substrate 21. In other words, the first heat transfer member 561 is not located in this region.
  • the first opening 56a is formed in the second portion 572.
  • the first opening 56a may be surrounded by the second portion 572.
  • the first opening 56a may have a circular shape in a planar view.
  • the first opening 56a passes through the second portion 572.
  • This first opening 56a is an opening that allows excitation light from the light-emitting element 3 to pass through to the wavelength conversion member 4 side.
  • the first heat transfer member 561 may be in contact with the entire second surface 5b of the intermediate member 5 except for the first opening 56a.
  • the first heat transfer member 561 may be in contact with the second surface 5b of the intermediate member 5 in an unbonded state.
  • the first heat transfer member 561 may be a metal plate and arranged in a detachable state.
  • the first heat transfer member 561 may be bonded to the second surface 5b of the intermediate member 5.
  • the first heat transfer member 561 may be formed on the second surface 5b of the intermediate member 5 by, for example, plating, spraying, or coating.
  • the first heat transfer member 561 can be formed by vacuum deposition, sputtering, CVD (chemical vapor deposition), electroless plating, or the like using the material of the first heat transfer member 561 as a raw material, with the area of the intermediate member 5 other than the area where the first heat transfer member 561 will be formed masked to form the plated portion before placing the intermediate member 5 on the light emitting device 1.
  • electrolytic plating may be performed on top of the first heat transfer member 561. In this case, the first heat transfer member 561 can be easily formed thicker, allowing for more effective heat transfer from the wavelength conversion member 4.
  • the first heat transfer member 561 can be formed by forming a metal film for the first heat transfer member 561 on the entire surface of the intermediate member 5 alone by vacuum deposition, sputtering, CVD (chemical vapor deposition), or electroless plating, and then irradiating the metal film with laser light at the portions where the first opening 56a and the wavelength conversion member 4 will be formed to remove a portion of the metal film.
  • the first heat transfer member 561 can be formed without a mask, and electrolytic plating may be performed on top of it in the same manner. Laser removal may also be performed after electrolytic plating.
  • the first heat transfer member 561 may be a heat transfer film formed on the second surface 5b of the intermediate member 5.
  • the material of the first heat transfer member 561 may be an organic resin such as epoxy resin. Even in this case, the first heat transfer member 561 may be in contact with the second surface 5b of the intermediate member 5 in an unbonded state, or may be bonded to the second surface 5b of the intermediate member 5.
  • the first heat transfer member 561 may be formed on the second surface 5b of the intermediate member 5 by, for example, painting. In this case, the first heat transfer member 561 may also be a heat transfer film.
  • excitation light from the light-emitting element 3 enters the indirect member 5 through the area surrounded by the first resin member 51 and the first opening 56a.
  • the excitation light then passes through the indirect member 5 and enters the wavelength conversion member 4.
  • the wavelength conversion member 4 absorbs at least a portion of the excitation light and emits illumination light (i.e., fluorescent light) and heat.
  • a portion of the heat generated in the wavelength conversion member 4 is transferred to the second portion 572 of the first heat transfer member 561 via the interior of the intermediate member 5. This heat is transferred from the second portion 572 to the first portion 571 and then to the first heat dissipation member 6. Because the thermal conductivity of the first heat transfer member 561 is higher than that of the intermediate member 5, the heat generated in the wavelength conversion member 4 can be transferred more effectively to the first heat dissipation member 6. In other words, heat from a portion of the intermediate member 5 that is far from the first heat dissipation member 6 is also transferred to the first heat dissipation member 6 via the highly thermally conductive first heat transfer member 561.
  • heat from a portion of the intermediate member 5 near the first resin member 51 is transferred to the first heat dissipation member 6 via the first heat transfer member 561. This further improves the heat dissipation performance of the light emitting device 1. This further mitigates the temperature rise in the wavelength conversion member 4.
  • this can mitigate the temperature rise of the intermediate member 5 and reduce variations in the temperature distribution of the intermediate member 5. This can reduce the possibility of peeling between the wavelength conversion member 4 and the intermediate member 5 due to thermal expansion. Furthermore, if the intermediate member 5 is made of sapphire, a sudden change in temperature from high to low may cause cracks in the sapphire. For example, when the light emitting device 1 is used in a low-temperature environment, the temperature of the light emitting device 1 may drop suddenly. Cracks are more likely to occur the greater the temperature change. In this embodiment, the temperature rise of the intermediate member 5 is also mitigated, so even if a temperature drop occurs, the temperature change is relatively small, reducing the possibility of cracks occurring. In other words, the reliability of the light emitting device 1 can also be improved.
  • the thermal conductivity of transparent ceramics can have temperature dependence, decreasing as the temperature increases.
  • Figure 18 is a graph schematically illustrating an example of the temperature dependence of the thermal conductivity of sapphire. As shown in Figure 18, the thermal conductivity of sapphire is approximately 41 W/mK at room temperature, but decreases to approximately 20 W/mK at 200 degrees Celsius. Therefore, if a transparent material with such temperature dependence is used for the intermediate member 5, the thermal conductivity of the intermediate member 5 will decrease due to the temperature increase associated with light emission from the wavelength conversion member 4.
  • the first heat transfer member 561 is provided, thereby sufficiently improving the heat dissipation of the light emitting device 1 even in relatively high-temperature regions.
  • the thermal conductivity of the first heat transfer member 561 at 200 degrees Celsius may be higher than the thermal conductivity of the intermediate member 5 at 25 degrees Celsius. This allows the heat dissipation of the light emitting device 1 to be sufficiently improved in high-temperature regions.
  • the thermal conductivity of the first heat transfer member 561 may have temperature dependency, decreasing as the temperature increases, but the decrease in thermal conductivity with respect to the amount of change in temperature may be smaller than the decrease in thermal conductivity of the intermediate member 5 with respect to that amount of change. This also allows the heat dissipation performance of the light emitting device 1 to be sufficiently improved in high-temperature regions.
  • the intermediate member 561 can improve the heat dissipation performance of the light emitting device 1, the intermediate member 5 can be made even smaller.
  • the intermediate member 5 can be made thinner, or the diameter of the intermediate member 5 can be reduced. Since transparent ceramics (especially sapphire) are expensive, this can reduce manufacturing costs.
  • the gap between the first heat transfer member 561 and the intermediate member 5 can be reduced. This reduces the thermal resistance between the intermediate member 5 and the first heat transfer member 561. Therefore, heat can be more effectively transferred from the intermediate member 5 to the first heat transfer member 561. If the first heat transfer member 561 is in contact with the entire second surface 5b of the intermediate member 5 except for the first opening 56a, heat can be even more effectively transferred from the intermediate member 5 to the first heat dissipation member 6.
  • Figure 19 is a diagram schematically showing an example of the positional relationship between the first opening 56a and the first resin member 51.
  • the outline of the first opening 56a may be located outside the inner peripheral edge 51a of the first resin member 51.
  • the outline of the first opening 56a may surround the inner peripheral edge 51a of the first resin member 51.
  • the area of the first opening 56a may be larger than the area surrounded by the inner peripheral edge 51a of the first resin member 51. This allows more excitation light from the light-emitting element 3 to be incident on the wavelength conversion member 4.
  • the outline of the first opening 56a may be located between the inner peripheral edge 51a and the outer peripheral edge 51b of the first resin member 51. Because the outline of this first opening 56a is formed by the second portion 572 of the first heat transfer member 561, the second portion 572 can be located near the excitation light incidence area of the wavelength conversion member 4 in a planar view. Therefore, the second portion 572 of the first heat transfer member 561 can be located near the heat-generating portion of the wavelength conversion member 4. Therefore, the first heat transfer member 561 can effectively transfer heat generated at the heat-generating portion to the first heat dissipation member 6.
  • the outline of the first opening 56a may be located outside the outer peripheral edge 51b of the first resin member 51. Even in this case, the presence of the second portion 572 of the first heat transfer member 561 makes it possible to improve the heat dissipation properties of the light emitting device 1.
  • Figure 20 is a cross-sectional view that schematically shows a second example of the configuration of the light-emitting device 1 according to the ninth embodiment.
  • the light-emitting device 1 according to the second example of the ninth embodiment differs from the light-emitting device 1 according to the first example of the ninth embodiment in the presence or absence of the second heat-transfer member 562.
  • Figure 21 is a perspective view that schematically shows an example of the configuration of the wavelength conversion member 4, the intermediate member 5, the first heat-transfer member 561, and the second heat-transfer member 562 according to the second example of the ninth embodiment.
  • the second heat transfer member 562 contacts the intermediate member 5 from the side opposite to the first heat transfer member 561. In other words, the second heat transfer member 562 contacts the first surface 5a of the intermediate member 5.
  • the thermal conductivity of the second heat transfer member 562 is higher than that of the wavelength conversion member 4, and is also higher than that of the intermediate member 5.
  • the thermal conductivity of the second heat transfer member 562 may be at least twice, or may be at least five times, the thermal conductivity of the intermediate member 5.
  • the transmittance of the second heat transfer member 562 for at least one of the excitation light and the illumination light may be lower than the transmittance of the intermediate member 5.
  • the transmittance of the second heat transfer member 562 for at least one of the excitation light and the illumination light may be, for example, 10% or less, 5% or less, 2% or less, or 1% or less. Since the transmittance of the second heat transfer member 562 may be low, the degree of freedom in selecting the material of the second heat transfer member 562 can be improved. Therefore, a material with higher thermal conductivity can be used for the second heat transfer member 562. Any of the materials exemplified above as the material of the first heat transfer member 561 can be used as the material of the second heat transfer member 562.
  • the second heat transfer member 562 may be made of the same material as the first heat transfer member 561.
  • the second heat transfer member 562 may be adjacent to the wavelength conversion member 4 in a plan view. As shown in Figures 20 and 21, the second heat transfer member 562 may have a second opening 56b. The outline of the second opening 56b may surround the wavelength conversion member 4. In other words, the wavelength conversion member 4 may be located inside the second opening 56b. In this case, the inner surface of the second heat transfer member 562 that forms the second opening 56b faces the side surface of the wavelength conversion member 4. In this way, the second heat transfer member 562 does not face the emission surface of the wavelength conversion member 4, and therefore does not substantially impede the emission of illumination light from the wavelength conversion member 4.
  • the second heat transfer member 562 may have a plate or sheet shape.
  • the thickness of the second heat transfer member 562 may be equal to or less than the thickness of the wavelength conversion member 4.
  • the surface of the second heat transfer member 562 opposite the intermediate member 5 may be flush with the emission surface of the wavelength conversion member 4 opposite the intermediate member 5, or may be located closer to the intermediate member 5 than the emission surface. This makes it possible to prevent illumination light emitted from the emission surface of the wavelength conversion member 4 from entering the second heat transfer member 562.
  • the light emitting device 1 includes the second heat transfer member 562.
  • the second heat transfer member 562 receives heat generated in the wavelength conversion member 4, for example, via the intermediate member 5.
  • the second heat transfer member 562 can dissipate heat to the outside, further improving the heat dissipation performance of the light emitting device 1.
  • the second heat transfer member 562 may be in contact with the first surface 5a of the indirect member 5 in an unbonded state. Alternatively, the second heat transfer member 562 may be bonded to the first surface 5a of the indirect member 5.
  • the second heat transfer member 562 may be formed on the first surface 5a by, for example, plating, spraying, or coating. The formation method is the same as that of the first heat transfer member 561, and the second heat transfer member 562 may be formed at the same time as the first heat transfer member 561.
  • plating may be performed while masking areas of the indirect member 5 other than those where the first heat transfer member 561 and the second heat transfer member 562 are bonded, or the entire surface of the indirect member 5 may be plated and then removed by irradiating the relevant areas of the metal film with laser light.
  • the second heat transfer member 562 can also be considered a heat transfer film formed on the first surface 5a of the indirect member 5. If the second heat transfer member 562 is bonded to the first surface 5a of the indirect member 5, the gap between the second heat transfer member 562 and the first surface 5a of the indirect member 5 can be reduced. This allows heat to be transferred more effectively from the intermediate member 5 to the second heat transfer member 562.
  • the second heat transfer member 562 may be in contact with the entire first surface 5a of the intermediate member 5 except for the second opening 56b. This allows heat to be more effectively transferred from the intermediate member 5 to the second heat transfer member 562, and the second heat transfer member 562 can more effectively dissipate heat.
  • a portion of the illumination light (i.e., fluorescence) emitted by the wavelength conversion member 4 may pass through the indirect member 5 and be reflected by the first heat transfer member 561.
  • the reflectance (maximum value) of the first heat transfer member 561 for the illumination light may be, for example, 50% or more, 60% or more, 70% or more, 80% or more, or 90% or more.
  • the reflected illumination light may then pass through the indirect member 5 again and be incident on the second heat transfer member 562.
  • the transmittance of the second heat transfer member 562 for the illumination light may be lower than the transmittance of the indirect member 5 for the illumination light. In this case, the illumination light cannot pass through the second heat transfer member 562 very much. This reduces the illumination light emitted into the illumination space from areas other than the emission surface of the wavelength conversion member 4. This allows the light emitting device 1 to emit higher-definition illumination light.
  • a portion of the excitation light reflected by the wavelength conversion member 4 may also be reflected by the first heat transfer member 561 and enter the second heat transfer member 562.
  • the transmittance of the second heat transfer member 562 for excitation light may be lower than the transmittance of the indirect member 5 for excitation light.
  • the transmittance of the second heat transfer member 562 for excitation light may be, for example, 10% or less, 5% or less, 2% or less, or 1% or less. In this case, the excitation light is not able to pass through the second heat transfer member 562 very much. This makes it possible to reduce the excitation light emitted into the illumination space from areas other than the wavelength conversion member 4. This allows the light emitting device 1 to emit illumination light with higher definition.
  • Figure 22 is a cross-sectional view schematically illustrating a third example of the configuration of the light-emitting device 1 according to the ninth embodiment.
  • the light-emitting device 1 according to the third example of the ninth embodiment differs from the light-emitting device 1 according to the second example of the ninth embodiment in the presence or absence of a third heat transfer member 563.
  • the third heat transfer member 563 connects the periphery of the first heat transfer member 561 and the periphery of the second heat transfer member 562.
  • the third heat transfer member 563 may be connected to the periphery of the first heat transfer member 561 around its entire circumference, or may be connected to the periphery of the second heat transfer member 562 around its entire circumference.
  • the third heat transfer member 563 may be in contact with the side surface 5c of the intermediate member 5, and as an example, may be in contact with the side surface 5c of the intermediate member 5 around its entire circumference.
  • the thermal conductivity of the third heat transfer member 563 is higher than that of the wavelength conversion member 4 and also higher than that of the intermediate member 5.
  • the thermal conductivity of the third heat transfer member 563 may be at least twice, or even five times, that of the intermediate member 5.
  • the transmittance of the third heat transfer member 563 for at least one of the illumination light and the excitation light may be lower than that of the intermediate member 5.
  • the transmittance of the third heat transfer member 563 for at least one of the illumination light and the excitation light may be, for example, 10% or less, 5% or less, 2% or less, or 1% or less. Since the transmittance of the third heat transfer member 563 may be low, the freedom in selecting the material for the third heat transfer member 563 can be improved.
  • the third heat transfer member 563 a material with higher thermal conductivity can be used for the third heat transfer member 563. Any of the materials listed above as examples of the material for the first heat transfer member 561 can be used for the third heat transfer member 563.
  • the third heat transfer member 563 may be made of the same material as the first heat transfer member 561 and the second heat transfer member 562.
  • the light-emitting device 1 includes the third heat-transfer member 563. Therefore, heat transferred from the intermediate member 5 to the second heat-transfer member 562 can be transferred to the first heat-dissipation member 6 via the third heat-transfer member 563 and the first heat-transfer member 561 in this order. This further improves the heat dissipation performance of the light-emitting device 1.
  • the third heat transfer member 563 is in contact with the side surface 5c of the intermediate member 5, heat is transferred from the side surface 5c of the intermediate member 5 through the third heat transfer member 563 and the first heat transfer member 561 to the first heat dissipation member 6. This further improves the heat dissipation performance of the light emitting device 1.
  • the third heat transfer member 563 may be in contact with the side surface 5c of the intermediate member 5 in an unbonded state. Alternatively, the third heat transfer member 563 may be bonded to the side surface 5c of the intermediate member 5. This further improves the heat dissipation performance of the light emitting device 1.
  • the third heat transfer member 563 is made of the same material as the first heat transfer member 561 and the second heat transfer member 562, the first heat transfer member 561, the second heat transfer member 562, and the third heat transfer member 563 can be integrally formed on the indirect member 5 in the same process. For example, these can be formed integrally on the indirect member 5 by plating, spraying, or coating. This reduces the cost of the indirect member 5, the first heat transfer member 561, the second heat transfer member 562, and the third heat transfer member 563.
  • the portion of the indirect member 5 on which the wavelength conversion member 4 is placed and the portion that will become the first opening 56a can be masked and plated, or the entire surface of the indirect member 5 can be plated and then laser light irradiated onto the relevant portions of the metal film to remove them.
  • a portion of the illumination light (i.e., fluorescent light) emitted by the wavelength conversion member 4 may pass through the intermediate member 5 and be reflected by the first heat transfer member 561.
  • the reflected fluorescent light may then pass through the intermediate member 5 again and be reflected by the second heat transfer member 562.
  • the reflectance (maximum value) of each of the first heat transfer member 561 and the second heat transfer member 562 for fluorescent light may be, for example, 50% or more, 60% or more, 70% or more, 80% or more, or 90% or more.
  • the fluorescent light travels through the intermediate member 5 toward the side surface 5c while repeatedly being reflected by the first heat transfer member 561 and the second heat transfer member 562.
  • Figure 23 is a diagram schematically illustrating an example of how fluorescent light travels inside the intermediate member 5.
  • the fluorescent light is schematically indicated by an arrow. As the fluorescent light travels through the intermediate member 5 toward the side surface 5c, it enters the third heat transfer member 563.
  • the transmittance (maximum value) of the third heat transfer member 563 for illumination light may be lower than the transmittance (maximum value) of the indirect member 5 for illumination light.
  • the transmittance of the third heat transfer member 563 for illumination light may be, for example, 10% or less, 5% or less, 2% or less, or 1% or less. In this case, fluorescent light does not pass through the third heat transfer member 563 very well. This makes it possible to reduce the amount of fluorescent light emitted into the illumination space from the side surface 5c of the indirect member 5. This allows the light emitting device 1 to emit illumination light with higher definition.
  • the reflectance (maximum value) of the third heat transfer member 563 for fluorescent light may be, for example, 50% or more, 60% or more, 70% or more, 80% or more, or 90% or more. In this case, a portion of the fluorescent light reflected by the third heat transfer member 563 may be emitted again into the illumination space through the wavelength conversion member 4. This allows the light emitting device 1 to emit illumination light with higher brightness.
  • the reflectance of each of the first heat transfer member 561 and the second heat transfer member 562 for the excitation light may be 50% or more, 60% or more, 70% or more, 80% or more, or 90% or more.
  • the excitation light like fluorescent light, travels inside the indirect member 5 toward the side surface 5c.
  • the transmittance of the third heat transfer member 563 for the excitation light may be lower than the transmittance of the indirect member 5 for the excitation light.
  • the transmittance of the third heat transfer member 563 for the excitation light may be, for example, 10% or less, 5% or less, 2% or less, or 1% or less. In this case, the excitation light is not able to pass through the third heat transfer member 563 very much. This makes it possible to reduce the excitation light emitted into the illumination space from the side surface 5c of the indirect member 5. This allows the light-emitting device 1 to emit higher-definition illumination light.
  • the reflectivity of the third heat transfer member 563 with respect to the excitation light may be, for example, 50% or more, 60% or more, 70% or more, 80% or more, or 90% or more.
  • a portion of the excitation light reflected by the third heat transfer member 563 is incident again on the wavelength conversion member 4. This improves the brightness of the illumination light emitted by the wavelength conversion member 4. This allows the light emitting device 1 to emit illumination light with higher brightness.
  • the light emitting device 1 includes the first resin member 51. However, in the ninth embodiment, the light emitting device 1 may not include the first resin member 51.
  • Figure 24 is a cross-sectional view schematically showing a fourth example of the configuration of the light emitting device 1 according to the ninth embodiment. In the example of Figure 24, the light emitting device 1 does not include the first resin member 51.
  • the first heat dissipation member 6 may be separated from the light emitting element 3 in a planar view.
  • the first heat dissipation member 6 may also be separated from the conductive pattern 7. Therefore, even if the first heat dissipation member 6 is conductive, it is easy to ensure insulation between the first heat dissipation member 6 and each of the light emitting element 3 and the conductive pattern 7.
  • the area of the portion of the intermediate member 5 that does not face the first heat dissipation member 6 is large.
  • the second portion 572 of the first heat transfer member 561 contacts at least a portion of this portion, and further, the first portion 571 continuous with the second portion 572 faces the first heat dissipation member 6.
  • heat from this portion of the intermediate member 5 is transferred to the first heat dissipation member 6 through the highly thermally conductive first heat transfer member 561. This also improves the heat dissipation performance of the light-emitting device 1 according to the fourth example of the ninth embodiment.
  • the first opening 56a of the first heat transfer member 561 can define the incident area of the wavelength conversion member 4.
  • the thickness of the first heat transfer member 561 may be smaller than the thickness of the first heat dissipation member 6. Because the first heat transfer member 561 is thin, the first opening 56a can be formed in the first heat transfer member 561 with high shape precision. This allows the light emitting device 1 to emit illumination light with a more precise emission diameter.
  • the first heat dissipation member 6 may have an annular shape surrounding the light-emitting element 3 in a plan view.
  • the filler 53 may fill the space inside the annular first heat dissipation member 6.
  • the first heat dissipation member 6 functions as a dam material.
  • the first heat dissipation member 6 may surround the element electrodes 71a and 72a in a plan view.
  • the wiring 71c and wiring 72c may pass through the substrate portion 2, unlike the example described above.
  • Tenth Embodiment Fig. 25 is a cross-sectional view schematically showing a first example of the configuration of the light-emitting device 1 according to the tenth embodiment.
  • Fig. 26 is a plan view schematically showing a first example of the configuration of the light-emitting device 1 according to the tenth embodiment.
  • the light-emitting device 1 according to the first example of the tenth embodiment differs from the light-emitting devices 1 according to the first to ninth embodiments in the presence or absence of a pressing portion 65.
  • the light-emitting device 1 may include a first heat-transfer member 561, a second heat-transfer member 562, and a third heat-transfer member 563, as in the ninth embodiment.
  • the pressing portion 65 presses the indirect member 5 toward the first heat dissipation member 6. This reduces the gap between the indirect member 5 and the first heat dissipation member 6. The factors that cause the gap between the indirect member 5 and the first heat dissipation member 6 will be described in detail later. In the tenth embodiment, the gap between the indirect member 5 and the first heat dissipation member 6 is reduced, thereby reducing the thermal resistance between the indirect member 5 and the first heat dissipation member 6. This allows heat to be transferred more effectively from the indirect member 5 to the first heat dissipation member 6.
  • the pressing portion 65 may include a pressing member 66 and a fastening member 67.
  • the pressing member 66 includes a third portion 661 and a fourth portion 662.
  • the third portion 661 is located on the opposite side of the intermediate member 5 from the first heat dissipation member 6. In other words, the third portion 661 is located on the first surface 5a side of the intermediate member 5.
  • the third portion 661 faces the intermediate member 5 in the thickness direction of the substrate 21.
  • the third portion 661 may be in contact with the first surface 5a of the intermediate member 5.
  • the second heat transfer member 562 is located on the first surface 5a of the intermediate member 5
  • the third portion 661 may be in contact with the second heat transfer member 562.
  • the fourth portion 662 is located outside the intermediate member 5 in a planar view (see FIG. 26).
  • the fourth portion 662 does not face the intermediate member 5 in the thickness direction of the substrate 21, but faces the first heat dissipation member 6.
  • the fourth portion 662 is connected to the third portion 661.
  • the fourth portion 662 is continuous with the third portion 661 and is positioned in a state where it protrudes from the third portion 661 to the outside of the intermediate member 5.
  • a fastening through hole 65a is formed in the fourth portion 662.
  • the through hole 65a penetrates the fourth portion 662 in the thickness direction of the substrate 21.
  • the fastening member 67 fastens the pressing member 66 to the first heat dissipation member 6 through a through hole 65a formed in the fourth portion 662.
  • the fastening member 67 may include a bolt or a screw. That is, the fastening member 67 may include a screw head 671 and a threaded portion 672 (see Figure 25).
  • the fastening member 67 is inserted into the through hole 65a of the fourth portion 662.
  • the inner diameter of the through hole 65a is larger than the diameter of the threaded portion 672.
  • a threaded hole may be formed in the first heat dissipation member 6 at a position opposite the through hole 65a.
  • the threaded portion 672 is coupled to the first heat dissipation member 6 by screw action, and the screw head 671 of the fastening member 67 presses the pressing member 66 toward the first heat dissipation member 6.
  • the third portion 661 of the pressing member 66 presses the intermediate member 5 toward the first heat dissipation member 6.
  • a screw hole is formed in the first heat dissipation member 6, but this is not necessarily limited to this.
  • a screw hole may also be formed in the substrate 21, and the threaded portion 672 may be connected to the substrate 21 by a screw action.
  • the fastening member 67 may include a nut. The fastening member 67 may also fasten the pressing member 66 to the structure from the first heat dissipation member 6 to the substrate 21 by co-tightening.
  • the light emitting device 1 may include multiple pressing portions 65.
  • the light emitting device 1 may include two pressing portions 65.
  • the two pressing portions 65 will also be referred to as the first pressing portion 651 and the second pressing portion 652, respectively.
  • the pressing member 66 of the first pressing portion 651 may be positioned opposite the heat dissipation member 61 in the thickness direction of the substrate 21, and the pressing member 66 of the second pressing portion 652 may be positioned opposite the heat dissipation member 62 in the thickness direction of the substrate 21.
  • the pressing member 66 of the first pressing portion 651 may face the first corner 551 of the intermediate member 5 in the thickness direction of the substrate 21.
  • the pressing member 66 of the second pressing portion 652 may face the second corner 552 diagonally opposite the first corner 551 of the intermediate member 5 in the thickness direction of the substrate 21.
  • the first corner 551 of the intermediate member 5 may face the heat dissipation member 61 in the thickness direction of the substrate 21, and the second corner 552 of the intermediate member 5 may face the heat dissipation member 62 in the thickness direction of the substrate 21.
  • each pressing member 66 may have a triangular shape in a plan view. Specifically, each pressing member 66 may have a right-angled triangular shape.
  • Each pressing member 66 may be positioned such that the two sides other than the hypotenuse are aligned along the respective sides of the intermediate member 5.
  • Each pressing member 66 may have multiple through holes 65a formed therein. As a specific example, each pressing member 66 may have two through holes 65a formed therein. A first corner 551 of the intermediate member 5 may be located between the two through holes 65a of the first pressing portion 651, and a second corner 552 of the intermediate member 5 may be located between the two through holes 65a of the second pressing portion 652. As shown in FIG. 26 , each through hole 65a may be located near an acute corner of the pressing member 66. With this structure in which the corner of the intermediate member 5 is located between two through holes 65a, the pressing member 66 can more effectively press the corner of the intermediate member 5 toward the first heat dissipation member 6 by fastening the fastening member 67.
  • the pressing portion 65 presses the intermediate member 5 toward the first heat dissipation member 6. This reduces the thermal resistance between the intermediate member 5 and the first heat dissipation member 6.
  • FIG. 27 is a cross-sectional view schematically illustrating a first specific example of the configuration of a light-emitting device 1 in which a pressing portion 65 is not disposed.
  • a portion of the filler 53 is interposed between the first resin member 51 and the intermediate member 5. This is because the amount of filler 53 may be larger than the space inside the first resin member 51 within the manufacturing clearance range. By using a larger amount of filler 53 in this way, the filler 53 can be more securely bonded to the intermediate member 5.
  • a gap may occur between the intermediate member 5 and the first heat dissipation member 6. Although the gap is exaggerated in the example of FIG. 27, it is actually smaller.
  • the end of the intermediate member 5 is open as a free end, so even if the light-emitting device 1 is subjected to an external impact, the impact can be dissipated from the intermediate member 5. Furthermore, even if there is a difference in the thermal expansion coefficient between the intermediate member 5 and the first heat dissipation member 6, thermal stress applied from the first heat dissipation member 6 to the intermediate member 5 can be almost completely avoided. Furthermore, when the second resin member 52 is not present, thermal stress caused by bonding between the second resin member 52 and the intermediate member 5 does not occur. However, this gap increases the thermal resistance between the intermediate member 5 and the first heat dissipation member 6.
  • Figure 28 is a cross-sectional view schematically showing a second specific example of the configuration of a light-emitting device 1 in which a pressing portion 65 is not arranged.
  • a portion of the first resin member 51 is located closer to the wavelength conversion member 4 than the first surface 6a of the first heat dissipation member 6. This is because a relatively large amount of the first resin member 51 may be used within the manufacturing clearance range. In this case, too, a gap is created between the intermediate member 5 and the first heat dissipation member 6. In the example of Figure 28, this gap is also exaggerated.
  • the light-emitting device 1 can also dissipate impacts from the intermediate member 5, reducing thermal stress generated in the intermediate member 5. However, this gap increases thermal resistance.
  • 29 is a cross-sectional view schematically illustrating a third specific example of the configuration of a light-emitting device 1 in which a pressing portion 65 is not disposed.
  • a portion of the second resin member 52 is interposed between the intermediate member 5 and the first heat dissipation member 6. This is because a relatively large amount of the second resin member 52 may be used within the manufacturing clearance range. By using a larger amount of the second resin member 52 in this manner, the second resin member 52 can be more securely bonded to the intermediate member 5.
  • the thermal resistance between the intermediate member 5 and the first heat dissipation member 6 becomes relatively large.
  • the second resin member 52 is interposed between the intermediate member 5 and the first heat dissipation member 6, resulting in a gap between the intermediate member 5 and the first heat dissipation member 6. In the example of FIG. 29, the gap is also exaggerated.
  • This structure reduces the thermal resistance in the path from the intermediate member 5 to the first heat dissipation member 6, thereby improving the heat dissipation performance of the optical light-emitting device 1 compared to the structures shown in Figures 27 and 28. Furthermore, the intermediate member 5 is less likely to peel off. However, this gap increases the thermal resistance.
  • the pressing portion 65 presses the indirect member 5 toward the first heat dissipation member 6. This makes it possible to reduce the gap between the indirect member 5 and the first heat dissipation member 6, for example. Alternatively, it is possible to reduce the thickness of the second resin member 52 between the indirect member 5 and the first heat dissipation member 6. Therefore, it is possible to reduce the thermal resistance between the indirect member 5 and the first heat dissipation member 6.
  • the pressing portion 65 may be attached to the first heat dissipation member 6 at the timing described below during the manufacture of the light emitting device 1.
  • the filling liquid which is the filler material 53 before solidification, is applied to the space inside the solidified first resin member 51, and then the intermediate member 5 with the wavelength conversion member 4 attached is placed on top of the first resin member 51 and the first heat dissipation member 6.
  • the pressing portion 65 is attached to the intermediate member 5 and the first heat dissipation member 6. This presses the intermediate member 5 toward the first heat dissipation member 6, reducing the gap between the intermediate member 5 and the first heat dissipation member 6.
  • the filling liquid may also be pressed by the intermediate member 5.
  • This pressure causes the filling liquid to spread within the space inside the first resin member 51. This reduces the void within the space. Furthermore, the filling material may overflow between the intermediate member 5 and the first resin member 51.
  • the filling liquid is solidified. In other words, the filling liquid solidifies and forms the filler material 53 while the gap between the intermediate member 5 and the first heat dissipation member 6 is reduced.
  • the intermediate member 5 can be reliably joined by the filler 53 while reducing the gap between the intermediate member 5 and the first heat dissipation member 6. This reduces the thermal resistance between the intermediate member 5 and the first heat dissipation member 6.
  • the pressing portion 65 may be attached at the timing described below. First, a filling liquid, which is the filler material 53 before solidification, is applied to the space inside the solidified first resin member 51, and a resin liquid, which is the second resin member 52 before solidification, is applied between the solidified first resin member 51 and the first heat dissipation member 6. Next, the indirect member 5 with the wavelength conversion member 4 attached is placed on top of the first resin member 51 and the first heat dissipation member 6. Next, the pressing portion 65 is attached to the indirect member 5 and the first heat dissipation member 6. This presses the indirect member 5 toward the first heat dissipation member 6.
  • the filling liquid may be pressed by the indirect member 5 or may spill out between the indirect member 5 and the first resin member 51.
  • the resin liquid may be pressed by the indirect member 5 or may spill out between the indirect member 5 and the first heat dissipation member 6. Because the intermediate member 5 is pressed toward the first heat dissipation member 6, the gap between the intermediate member 5 and the first heat dissipation member 6 is reduced. As a result, the resin liquid spreads thinly between the intermediate member 5 and the first heat dissipation member 6. Next, with the pressing portion 65 attached, the filling liquid and resin liquid are solidified.
  • the intermediate member 5 can be reliably bonded by the filler 53 and the second resin member 52, while the gap between the intermediate member 5 and the first heat dissipation member 6 can be reduced. In other words, the thickness of the second resin member 52 can be reduced. Furthermore, because the resin liquid spreads thinly between the intermediate member 5 and the first heat dissipation member 6, the gap between the intermediate member 5 and the first heat dissipation member 6 can be more reliably reduced. Therefore, the thermal resistance between the intermediate member 5 and the first heat dissipation member 6 can be more reliably reduced.
  • the pressing portion 65 includes a pressing member 66 and a fastening member 67. This allows the pressing member 66 to be attached to the first heat dissipation member 6 with a simpler structure, while pressing the indirect member 5 toward the first heat dissipation member 6.
  • the thermal conductivity of the pressing member 66 of the pressing portion 65 may be higher than that of the wavelength conversion member 4, and may also be higher than that of the intermediate member 5.
  • the pressing member 66 is formed from at least one of a metal and a ceramic.
  • metals that can be used include silver, copper, gold, aluminum, zinc, chromium, nickel, or tin, or an alloy containing at least one of these.
  • ceramics that can be used include silicon carbide or aluminum nitride.
  • the thermal conductivity of the fastening member 67 may be higher than that of the wavelength conversion member 4, and may also be higher than that of the intermediate member 5.
  • the fastening member 67 is made of at least one of a metal and a ceramic.
  • metals that can be used include iron, silver, copper, gold, aluminum, zinc, chromium, nickel, and tin, as well as alloys containing at least one of these (e.g., stainless steel).
  • ceramics that can be used include silicon carbide and aluminum nitride.
  • the pressing member 66 when the thermal conductivity of the pressing member 66 is high, the pressing member 66 can more effectively dissipate the heat received from the intermediate member 5 to the outside. It is also possible to transfer heat from the pressing member 66 to the first heat dissipation member 6. For example, it is also possible to transfer heat from the pressing member 66 to the first heat dissipation member 6 via the fastening member 67. This further improves the heat dissipation performance of the light emitting device 1.
  • a portion of the fourth portion 662 of the pressing member 66 may be located closer to the first heat dissipation member 6 than the third portion 661.
  • the fourth portion 662 is located in a state where it protrudes closer to the first heat dissipation member 6 than the third portion 661.
  • the amount by which the fourth portion 662 protrudes from the third portion 661 is equal to or less than the thickness of the intermediate member 5.
  • the portion of the fourth portion 662 faces at least a portion of the side surface 5c of the intermediate member 5 in a direction parallel to the first surface of the substrate 21.
  • the fourth portion 662 may cover at least a portion of the side surface 5c of the intermediate member 5. In other words, the fourth portion 662 may partially cover the side surface 5c of the intermediate member 5 from the outside. The side surface 5c of the intermediate member 5 may be partially covered by the fourth portion 662, or may be partially exposed. For example, when the intermediate member 5 is a rectangular plate-shaped member, the fourth portion 662 may cover the side surface of the corner of the intermediate member 5, or the fourth portion 662 may cover the entire intermediate member 5 other than the corners.
  • This structure allows the distance between the fourth portion 662 of the pressing member 66 and the first heat dissipation member 6 to be reduced. This reduces the thermal resistance between the pressing member 66 and the first heat dissipation member 6. This allows heat from the intermediate member 5 to be more effectively transferred to the first heat dissipation member 6 through the pressing member 66. Note that when the fastening member 67 is attached, the fourth portion 662 may be in contact with the first surface 6a of the first heat dissipation member 6.
  • the surface of the fourth portion 662 that faces the side surface 5c of the indirect member 5 will also be referred to as the "facing surface.”
  • the fluorescence and excitation light emitted from the side surface 5c of the intermediate member 5 are incident on the opposing surface of the fourth portion 662.
  • the transmittance of the fourth portion 662 for at least one of the fluorescence and excitation light may be lower than the transmittance of the intermediate member 5.
  • the transmittance of the fourth portion 662 for at least one of the fluorescence and excitation light may be 10% or less, 5% or less, 2% or less, or 1% or less. This prevents at least one of the fluorescence and excitation light from passing through the fourth portion 662 of the pressing member 66 to a large extent. This reduces the amount of fluorescence or excitation light emitted from the side surface 5c of the intermediate member 5 into the illumination space. This allows the light-emitting device 1 to emit illumination light with higher definition.
  • At least one of the fluorescence and the excitation light may be absorbed by the fourth portion 662.
  • the fourth portion 662 may be formed of black silicon carbide.
  • at least one of the fluorescence and the excitation light may be reflected by the fourth portion 662.
  • the reflectance of the fourth portion 662 for at least one of the fluorescence and the excitation light may be 50% or more, 60% or more, 70% or more, 80% or more, or 90% or more.
  • the above-mentioned materials exemplified as materials for the pressing member 66 have high reflectance for the fluorescence and the excitation light.
  • the fourth portion 662 may be anodized.
  • At least one of the fluorescence and the excitation light reflected by the opposing surface of the fourth portion 662 may be incident on the wavelength conversion member 4 again through the indirect member 5. This allows the light emitting device 1 to emit illumination light with higher brightness.
  • Figure 30 is a plan view schematically showing a second example of the configuration of the light emitting device 1 according to the tenth embodiment.
  • the light emitting device 1 according to the second example of the tenth embodiment differs from the light emitting device 1 according to the first example of the tenth embodiment in the configuration of the pressing member 66 of the pressing portion 65.
  • the pressing member 66 may have an annular shape in plan view.
  • the pressing member 66 may surround the wavelength conversion member 4 in plan view.
  • the inner surface of the pressing member 66 may surround the side surface of the wavelength conversion member 4.
  • the pressing member 66 may have an annular shape, and the wavelength conversion member 4 may have a disk shape.
  • the inner diameter (diameter) of the pressing member 66 may be equal to or greater than the diameter of the wavelength conversion member 4.
  • the pressing member 66 includes a third portion 661 and a fourth portion 662.
  • the third portion 661 faces the intermediate member 5, and the fourth portion 662 faces the first heat dissipation member 6 outside the intermediate member 5.
  • the third portion 661 may have an annular shape. That is, the third portion 661 may face the intermediate member 5 over the entire circumference of the wavelength conversion member 4.
  • the inner diameter (diameter) of the pressing member 66 may be shorter than one side of the intermediate member 5, and the outer diameter (diameter) of the pressing member 66 may be longer than one side of the intermediate member 5.
  • the third portion 661 has an annular shape.
  • the fourth portion 662 is separated into multiple portions. In the example of FIG. 30, four fourth portions 662 are located outside the intermediate member 5.
  • Each fourth portion 662 may have an arch-shaped shape in a plan view.
  • the inner diameter of the pressing member 66 may be longer than one side of the indirect member 5 and shorter than the diagonal of the indirect member 5.
  • the multiple third portions 661 face the multiple corners of the indirect member 5, respectively.
  • the outer diameter of the pressing member 66 may be longer than the diagonal of the indirect member 5.
  • the fourth portion 662 has an annular shape. In other words, the fourth portion 662 is located outside the indirect member 5 all around the circumference.
  • the fastening members 67 may be attached one-to-one to the sides of the indirect member 5.
  • the fastening members 67 may be attached to positions adjacent to the center of each side of the indirect member 5 in a plan view. In this way, by fastening the fastening members 67, the pressing member 66 can press the indirect member 5 more evenly toward the first heat dissipation member 6.
  • the third portion 661 of the pressing member 66 is in contact with the intermediate member 5 over a larger area.
  • the pressing member 66 can press all corners of the intermediate member 5. This allows heat from the intermediate member 5 to be effectively transferred to the outside or to the first heat dissipation member 6 through the pressing member 66. This further improves the heat dissipation performance of the light-emitting device 1.
  • the thickness of the third portion 661 of the pressing member 66 may be smaller than the thickness of the wavelength conversion member 4, but may also be larger. If the third portion 661 is thicker than the wavelength conversion member 4, the pressing member 66 can more effectively release heat to the outside.
  • the third portion 661 may be thicker than the first heat dissipation member 6 and may also be thicker than the substrate 21.
  • Eleventh Embodiment 31 is a perspective view schematically illustrating a first example of the configuration of the lighting device 10 according to the eleventh embodiment.
  • the lighting device 10 according to the first example of the eleventh embodiment differs from the lighting device 10 according to the third embodiment in the presence or absence of a pressing portion 65.
  • the light-emitting device 1 includes an indirect member 5.
  • the second heat dissipation member 91 also functions as a pressing portion 65. Specifically, the second heat dissipation member 91 has a pressing member 66. As shown in FIG. 31 , a portion of the second heat dissipation member 91 faces a portion of the intermediate member 5 in the thickness direction of the substrate 21, and functions as a third portion 661 of the pressing member 66. As in the first example of the tenth embodiment, the second heat dissipation member 91 may include multiple third portions 661. As a specific example, the first heat dissipation member 6 may include two third portions 661. One third portion 661 may face the first corner portion 551 of the intermediate member 5, and the other third portion 661 may face the second corner portion 552 of the intermediate member 5.
  • the third portion 661 may form part of the outline of the opening 91a of the second heat dissipation member 91.
  • the opening 91a of the second heat dissipation member 91 may have a shape that extends along a diagonal line connecting the third corner 553 and the fourth corner 554 of the intermediate member 5.
  • the opening 91a may be an elongated hole that is long in the direction along the diagonal line.
  • the second heat dissipation member 91 does not have to face the third corner 553 and the fourth corner 554 of the intermediate member 5 in the thickness direction of the board 21. In other words, in a plan view, the third corner 553 and the fourth corner 554 of the intermediate member 5 may be located inside the opening 91a.
  • the second heat dissipation member 91 faces the first heat dissipation member 6 outside the intermediate member 5 in the thickness direction of the substrate 21, and functions as the fourth portion 662 of the pressing member 66.
  • the second heat dissipation member 91 may include multiple fourth portions 662.
  • the second heat dissipation member 91 may include two fourth portions 662. One fourth portion 662 may face the heat dissipation member 61, and the other fourth portion 662 may face the heat dissipation member 62.
  • a through hole 65a is formed in the fourth portion 662 of the second heat dissipation member 91, and is penetrated by a fastening member 67.
  • multiple through holes 65a may be formed in each fourth portion 662.
  • two through holes 65a may be formed in each fourth portion 662.
  • each corner of the intermediate member 5 may be located between two through holes 65a in each fourth portion 662.
  • the second heat dissipation member 91 By fastening the fastening member 67, the second heat dissipation member 91 is pressed toward the first heat dissipation member 6, and the third portion 661 of the second heat dissipation member 91 presses the intermediate member 5 toward the first heat dissipation member 6. This reduces the thermal resistance between the intermediate member 5 and the first heat dissipation member 6. This also reduces the thermal resistance between the fourth portion 662 of the second heat dissipation member 91 and the first heat dissipation member 6. This pressure also reduces the thermal resistance between the third portion 661 of the second heat dissipation member 91 and the intermediate member 5. This allows heat to be more effectively transferred from the intermediate member 5 to each of the first heat dissipation member 6 and the second heat dissipation member 91.
  • portion 91c of the second heat dissipation member 91 may also face the heat sink 92.
  • Portion 91c may be in contact with the first surface 92a of the heat sink 92, and a highly thermally conductive resin such as thermal grease may be positioned between portion 91c and the heat sink 92.
  • the portion 91c of the second heat dissipation member 91 may be pressed toward the heat sink 92.
  • the thermal resistance between the portion 91c of the second heat dissipation member 91 and the heat sink 92 can be reduced. This allows heat to be transferred more effectively from the second heat dissipation member 91 to the heat sink 92.
  • the second heat dissipation member 91 may be in contact with the inner circumferential surface of the cylindrical body 93.
  • portion 91c of the second heat dissipation member 91 may be in contact with the inner circumferential surface of the cylindrical body 93. This allows heat from the intermediate member 5 to be transferred to the cylindrical body 93 via the second heat dissipation member 91. This further improves the heat dissipation performance of the lighting device 10.
  • a portion of the fourth portion 662 of the second heat dissipation member 91 may face at least a portion of the side surface 5c of the intermediate member 5 in a direction parallel to the first surface of the substrate 21. This reduces the possibility that fluorescence and excitation light will be emitted into the illumination space, even if fluorescence and excitation light are emitted from at least a portion of the side surface 5c of the intermediate member 5.
  • Figure 32 is a perspective view that schematically illustrates a second example of the configuration of the lighting device 10 according to the 11th embodiment.
  • the lighting device 10 according to the second example of the 11th embodiment differs from the lighting device 10 according to the first example of the 11th embodiment in the configuration of the second heat dissipation member 91.
  • the second heat dissipation member 91 also functions as the pressing member 66.
  • the opening 91a may have a circular shape in a plan view, and the second heat dissipation member 91 (specifically, the third portion 661) may face each of the first corner 551 to the fourth corner 554 of the intermediate member 5.
  • the second heat dissipation member 91 may face all of the corners of the intermediate member 5.
  • the third portion 661 of the second heat dissipation member 91 may form the entire outline of the opening 91a.
  • the third portion 661 of the second heat dissipation member 91 contacts the intermediate member 5 over a larger area. Therefore, by fastening the fastening member 67, the second heat dissipation member 91 can press the intermediate member 5 more evenly toward the first heat dissipation member 6. This allows heat from the intermediate member 5 to be more effectively transferred to the heat sink 92 or the cylindrical body 93 via the second heat dissipation member 91. This further improves the heat dissipation performance of the lighting device 10.
  • the second heat dissipation member 91 may be integrally formed from the same material, or may be composed of a combination of multiple members. These multiple members may be in contact with each other, or a highly thermally conductive resin may be positioned between the members. At least two of the multiple members may be formed from different materials.
  • the same material means that the main components are the same, and may contain different components.
  • the light emitting device 1 may not include the first resin member 51, and the wavelength conversion member 4 may be placed on top of the first heat dissipation member 6. Furthermore, as a thirteenth embodiment, as shown in Fig. 34 , the light emitting device 1 may not include the first resin member 51, and the wavelength conversion member 4 may be placed on top of the first heat dissipation member 6 via an intermediate member 5.
  • the light emitting element 3 and the wavelength conversion member 4, which can be heat sources are located apart in the thickness direction of the substrate 21, and therefore can be less susceptible to the thermal influence of each other.
  • a portion of the peripheral edge of the wavelength conversion member 4 may face the first heat dissipation member 6 in the thickness direction of the substrate 21. That is, in a plan view, a portion of the wavelength conversion member 4 may overlap the first heat dissipation member 6. A portion of the wavelength conversion member 4 may overlap the heat dissipation member 61, and another portion of the wavelength conversion member 4 may overlap the heat dissipation member 62.
  • a portion of the peripheral edge of the intermediate member 5 may face the first heat dissipation member 6 in the thickness direction of the substrate 21. That is, in a plan view, a portion of the intermediate member 5 may overlap the first heat dissipation member 6. A portion of the intermediate member 5 may overlap the heat dissipation member 61, and another portion of the intermediate member 5 may overlap the heat dissipation member 62.
  • a filler 53 may be located in the area surrounded by the first heat dissipation member 6.
  • the filler 53 may have the same characteristics as in the first embodiment, except that it is surrounded by the first resin member 51.
  • the filler 53 may be located in at least the portion of the area surrounded by the first heat dissipation member 6 that covers the light-emitting element 3.
  • the light-emitting device 1 and the lighting device 10 have been described in detail, but the above description is illustrative in all respects and this disclosure is not limited thereto. Furthermore, the various examples described above can be applied in combination as long as they are not mutually contradictory. It is understood that countless examples not illustrated can be envisioned without departing from the scope of this disclosure.
  • This disclosure includes the following:
  • the light-emitting device may include a substrate, a wavelength conversion member that emits illumination light based on excitation light, a first light-emitting element that is located between the substrate and the wavelength conversion member and emits the excitation light, and a first heat dissipation member that is located between the substrate and the wavelength conversion member and away from the first light-emitting element, and that has a thermal conductivity higher than that of the wavelength conversion member.
  • the light-emitting device of (1) above may further include a first resin member located between the substrate portion and the wavelength conversion member and surrounding the first light-emitting element in a planar view, and the first heat dissipation member may be adjacent to the first resin member on the outside of the first resin member with a gap therebetween.
  • the peripheral edge of the wavelength conversion member can be positioned outside the inner peripheral edge of the first resin member in a plan view.
  • any one of the light-emitting devices (1) to (3) above may further include an intermediate member having a first surface and a second surface, being translucent to the excitation light, and having a thermal conductivity higher than that of the wavelength conversion member, wherein the peripheral edge of the second surface of the intermediate member may face a portion of the first heat dissipation member, and the wavelength conversion member may be positioned on the first surface of the intermediate member.
  • the wavelength conversion member can include a plurality of phosphor particles and a binder layer bonding the plurality of phosphor particles together, and the wavelength conversion member can be bonded to the intermediate member.
  • the fracture strength of the intermediate member may be higher than the fracture strength of the wavelength conversion member.
  • any one of the light-emitting devices described in (4) to (6) above may further include a first heat transfer member that is in contact with the second surface of the intermediate member and has a thermal conductivity higher than that of the intermediate member, and the first heat transfer member may include a first portion that faces the first heat dissipation member and a second portion that is connected to the first portion and is located closer to the first resin member than the first heat dissipation member in a planar view, and may have a first opening that passes the excitation light from the first light-emitting element in a region that faces at least a portion of the wavelength conversion member.
  • the outline of the first opening can be positioned outside the inner peripheral edge of the first resin member.
  • the first heat transfer member can be joined to the intermediate member.
  • the light-emitting device may further include a second heat transfer member, the second heat transfer member having a thermal conductivity higher than that of the intermediate member, and being in contact with the first surface of the intermediate member.
  • the second heat transfer member may have a second opening, and the outline of the second opening may surround the wavelength conversion member.
  • the light-emitting device of (10) or (11) above may further include a third heat transfer member, the third heat transfer member having a thermal conductivity higher than that of the intermediate member, and the first heat transfer member and the second heat transfer member may be connected in contact with the side surface of the intermediate member.
  • the transmittance of the third heat transfer member for the illumination light may be lower than the transmittance of the indirect member for the illumination light.
  • the first heat transfer member, the second heat transfer member, and the third heat transfer member can be formed from the same material.
  • Any one of the light-emitting devices (7) to (14) above may further include a pressing portion that presses the intermediate member toward the first heat dissipation member.
  • the thermal conductivity of the pressing portion may be higher than the thermal conductivity of the wavelength conversion member.
  • the pressing portion may include a pressing member and a fastening member
  • the pressing member may include a third portion located on the first surface side of the intermediate member and a fourth portion connected to the third portion and located outside the intermediate member
  • the fastening member may fasten the pressing member to the first heat dissipation member through a through hole formed in the fourth portion.
  • the fourth portion includes a portion that partially covers the side surface of the connecting member from the outside.
  • Any one of the light-emitting devices (1) to (18) above may further include a second resin member positioned between the first resin member and the first heat dissipation member and having a thermal conductivity higher than that of air.
  • the light-emitting device may further include an electronic component located between the first resin member and the first heat dissipation member.
  • the electronic component may include a protective element that protects the first light-emitting element.
  • Any one of the light-emitting devices (1) to (21) above may further include a second light-emitting element that emits light having a wavelength different from the wavelength of the excitation light of the first light-emitting element.
  • the light-emitting device of (22) above may include a first electrode connected to the first light-emitting element, and a second electrode connected to the second light-emitting element and to which a voltage different from the voltage applied to the first electrode is applied.
  • the wavelength conversion member may include a first phosphor that emits a first fluorescence based on the excitation light and a second phosphor that emits a second fluorescence based on the excitation light, and the wavelength dependence of the absorption rate of the second phosphor for the excitation light may be greater than the wavelength dependence of the absorption rate of the first phosphor for the excitation light, and the second light-emitting element may emit light having a wavelength closer to the wavelength of the second fluorescence than to the wavelength of the first fluorescence.
  • any one of the light-emitting devices (1) to (24) above may include a first electrode connected to the first light-emitting element, and in a planar view, at least a portion of the first resin member may be positioned to overlap at least a portion of the first electrode, and the first heat dissipation member may be conductive and may be positioned in a region that avoids the first electrode in a planar view.
  • any one of the light-emitting devices (1) to (25) above may further include a reflector that is reflective to the excitation light
  • the substrate portion may include a substrate, an insulating film on the substrate, and a first electrode located on the insulating film
  • the first light-emitting element may be located on the first electrode and connected to the first electrode
  • the reflector may be located on the insulating film at a position adjacent to the first light-emitting element.
  • the substrate portion may include a substrate that is reflective to the excitation light
  • the light-emitting device may include an insulating film located on the substrate at a position adjacent to the first light-emitting element, and a first electrode located on the insulating film and electrically connected to the first light-emitting element by a wire.
  • the lighting device may include any one of the light-emitting devices (1) to (27) above, a cylindrical body that houses the light-emitting device, and a second heat-dissipating member that contacts the first heat-dissipating member and the inner surface of the cylindrical body.
  • the lighting device may include the light-emitting device of (17) or (18) above, a cylindrical body that houses the light-emitting device, and a second heat-dissipating member that contacts the first heat-dissipating member and the inner surface of the cylindrical body, and the second heat-dissipating member may have the pressing member.

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Abstract

This light-emitting device is provided with a substrate part, a wavelength conversion member, a first light-emitting element, and a first heat-dissipation member. The wavelength conversion member emits illumination light on the basis of excitation light. The first light-emitting element is positioned between the substrate part and the wavelength conversion member, and emits excitation light. The first heat-dissipation member is positioned between the substrate part and the wavelength conversion member so as to be spaced apart from the first light-emitting element, and has a thermal conductivity higher than the thermal conductivity of the wavelength conversion member.

Description

発光装置および照明装置Light-emitting device and lighting device 関連出願の相互参照CROSS-REFERENCE TO RELATED APPLICATIONS

 本出願は、日本国出願2024-84598号(2024年5月24日出願)および日本国出願2024-225061号(2024年12月20日出願)の優先権を主張する出願であり、当該日本国出願の開示全体を、ここに参照のために取り込む。 This application claims priority to Japanese Application No. 2024-84598 (filed May 24, 2024) and Japanese Application No. 2024-225061 (filed December 20, 2024), the entire disclosures of which are incorporated herein by reference.

 本開示は、発光装置および照明装置に関する。 This disclosure relates to light-emitting devices and lighting devices.

 特許文献1には、照明装置に関する技術が記載されている。 Patent Document 1 describes technology related to lighting devices.

特開2015-84384号公報JP 2015-84384 A

 発光装置が開示される。 A light-emitting device is disclosed.

 一実施形態において、発光装置は、基板部と、波長変換部材と、第1発光素子と、第1放熱部材とを備える。波長変換部材は励起光に基づいて照明光を発する。第1発光素子は基板部と波長変換部材との間に位置し、励起光を発する。第1放熱部材は、基板部と波長変換部材との間において第1発光素子から離れて位置し、かつ、波長変換部材の熱伝導率よりも高い熱伝導率を有する。 In one embodiment, the light-emitting device comprises a substrate, a wavelength conversion member, a first light-emitting element, and a first heat dissipation member. The wavelength conversion member emits illumination light based on excitation light. The first light-emitting element is located between the substrate and the wavelength conversion member and emits excitation light. The first heat dissipation member is located between the substrate and the wavelength conversion member, spaced apart from the first light-emitting element, and has a thermal conductivity higher than that of the wavelength conversion member.

 一実施形態において、照明装置は、上記発光装置と、筒状体と、第2放熱部材とを備える。筒状体は上記発光装置を収納する。第2放熱部材は第1放熱部材および筒状体の内周面に接する。 In one embodiment, the lighting device comprises the light-emitting device, a cylindrical body, and a second heat dissipation member. The cylindrical body houses the light-emitting device. The second heat dissipation member contacts the first heat dissipation member and the inner surface of the cylindrical body.

図1は、第1実施形態に係る発光装置の構成の一例を概略的に示す断面図である。FIG. 1 is a cross-sectional view schematically showing an example of the configuration of a light emitting device according to the first embodiment. 図2は、第1実施形態に係る発光装置の構成の一例を概略的に示す平面図である。FIG. 2 is a plan view schematically illustrating an example of the configuration of the light emitting device according to the first embodiment. 図3は、第2実施形態に係る発光装置の構成の一例を概略的に示す断面図である。FIG. 3 is a cross-sectional view schematically showing an example of the configuration of the light emitting device according to the second embodiment. 図4は、第2実施形態に係る発光装置の構成の一例を概略的に示す平面図である。FIG. 4 is a plan view schematically showing an example of the configuration of the light emitting device according to the second embodiment. 図5は、第3実施形態に係る照明装置の構成の一例を概略的に示す分解斜視図である。FIG. 5 is an exploded perspective view schematically illustrating an example of the configuration of an illumination device according to the third embodiment. 図6は、第4実施形態に係る発光装置の構成の一例を概略的に示す断面図である。FIG. 6 is a cross-sectional view schematically showing an example of the configuration of a light emitting device according to the fourth embodiment. 図7は、第5実施形態に係る発光装置の構成の一例を概略的に示す平面図である。FIG. 7 is a plan view schematically showing an example of the configuration of a light emitting device according to the fifth embodiment. 図8は、第5実施形態に係る発光装置の構成の一例を概略的に示す断面図である。FIG. 8 is a cross-sectional view schematically showing an example of the configuration of a light emitting device according to the fifth embodiment. 図9は、第6実施形態に係る発光装置の構成の第1例を概略的に示す平面図である。FIG. 9 is a plan view schematically showing a first example of the configuration of the light emitting device according to the sixth embodiment. 図10は、第6実施形態に係る発光装置の構成の第2例を概略的に示す平面図である。FIG. 10 is a plan view schematically showing a second example of the configuration of the light emitting device according to the sixth embodiment. 図11は、第7実施形態に係る発光装置の構成の一例を概略的に示す平面図である。FIG. 11 is a plan view schematically illustrating an example of the configuration of a light emitting device according to the seventh embodiment. 図12は、発光装置の電気的な構成の一例を概略的に示す図である。FIG. 12 is a diagram schematically illustrating an example of the electrical configuration of a light emitting device. 図13は、蛍光体の吸収率の波長依存性の一例を示すグラフである。FIG. 13 is a graph showing an example of the wavelength dependency of the absorptance of a phosphor. 図14は、第8実施形態に係る発光装置の構成の第1例を概略的に示す断面図である。FIG. 14 is a cross-sectional view schematically showing a first example of the configuration of the light emitting device according to the eighth embodiment. 図15は、第8実施形態に係る発光装置の構成の第2例を概略的に示す断面図である。FIG. 15 is a cross-sectional view schematically showing a second example of the configuration of the light emitting device according to the eighth embodiment. 図16は、第9実施形態にかかる発光装置の構成の第1例を概略的に示す断面図である。FIG. 16 is a cross-sectional view schematically showing a first example of the configuration of a light emitting device according to the ninth embodiment. 図17は、第9実施形態の第1例にかかる間接部材および第1伝熱部材の構成の一例を概略的に示す斜視図である。FIG. 17 is a perspective view schematically illustrating an example of the configuration of an intermediate member and a first heat transfer member according to a first example of the ninth embodiment. 図18は、サファイアの熱伝導率の温度依存性の一例を概略的に示すグラフである。FIG. 18 is a graph schematically showing an example of the temperature dependence of the thermal conductivity of sapphire. 図19は、第1開口および第1樹脂部材の位置関係の一例を概略的に示す図である。FIG. 19 is a diagram schematically illustrating an example of the positional relationship between the first opening and the first resin member. 図20は、第9実施形態にかかる発光装置の構成の第2例を概略的に示す断面図である。FIG. 20 is a cross-sectional view schematically showing a second example of the configuration of the light emitting device according to the ninth embodiment. 図21は、第9実施形態の第2例にかかる、波長変換部材、間接部材、第1伝熱部材および第2伝熱部材の構成の一例を概略的に示す斜視図である。FIG. 21 is a perspective view schematically illustrating an example of the configuration of a wavelength conversion member, an intermediate member, a first heat transfer member, and a second heat transfer member according to a second example of the ninth embodiment. 図22は、第9実施形態にかかる発光装置の構成の第3例を概略的に示す断面図である。FIG. 22 is a cross-sectional view schematically showing a third example of the configuration of the light emitting device according to the ninth embodiment. 図23は、蛍光が間接部材の内部を進む様子の一例を模式的に示す図である。FIG. 23 is a diagram schematically illustrating an example of how the fluorescent light travels inside the supporting member. 図24は、第9実施形態にかかる発光装置の構成の第4例を概略的に示す断面図である。FIG. 24 is a cross-sectional view schematically showing a fourth example of the configuration of the light emitting device according to the ninth embodiment. 図25は、第10実施形態にかかる発光装置の構成の第1例を概略的に示す断面図である。FIG. 25 is a cross-sectional view schematically showing a first example of the configuration of a light emitting device according to the tenth embodiment. 図26は、第10実施形態にかかる発光装置の構成の第1例を概略的に示す平面図である。FIG. 26 is a plan view schematically showing a first example of the configuration of the light emitting device according to the tenth embodiment. 図27は、押圧部65が配置されていない発光装置の構成の第1具体例を概略的に示す断面図である。FIG. 27 is a cross-sectional view schematically showing a first specific example of the configuration of a light emitting device in which a pressing portion 65 is not provided. 図28は、押圧部65が配置されていない発光装置の構成の第2具体例を概略的に示す断面図である。FIG. 28 is a cross-sectional view schematically showing a second specific example of the configuration of a light emitting device in which a pressing portion 65 is not provided. 図29は、押圧部65が配置されていない発光装置の構成の第3具体例を概略的に示す断面図である。FIG. 29 is a cross-sectional view schematically showing a third specific example of the configuration of a light emitting device in which a pressing portion 65 is not provided. 図30は、第10実施形態にかかる発光装置の構成の第2例を概略的に示す平面図である。FIG. 30 is a plan view schematically showing a second example of the configuration of the light emitting device according to the tenth embodiment. 図31は、第11実施形態にかかる照明装置の構成の第1例を概略的に示す斜視図である。FIG. 31 is a perspective view schematically illustrating a first example of the configuration of an illumination device according to an eleventh embodiment. 図32は、第11実施形態にかかる照明装置の構成の第2例を概略的に示す斜視図である。FIG. 32 is a perspective view schematically illustrating a second example of the configuration of the illumination device according to the eleventh embodiment. 図33は、第12実施形態にかかる発光装置の構成の一例を概略的に示す断面図である。FIG. 33 is a cross-sectional view schematically showing an example of the configuration of a light emitting device according to the twelfth embodiment. 図34は、第13実施形態にかかる発光装置の構成の一例を概略的に示す断面図である。FIG. 34 is a cross-sectional view schematically showing an example of the configuration of a light emitting device according to the thirteenth embodiment.

 筐体と、LED(Light Emitting Diode)素子と、蛍光部材とを含む発光装置が知られている。筐体は凹部を有しており、LED素子は凹部内に位置している。蛍光部材は、板状形状を有しており、筐体の凹部の開口を塞ぐ状態で位置する。蛍光部材は、板状の透明部材と、透明部材の内部に分散して位置する複数の蛍光体粒子とを含む。筐体の凹部の内部には、LED素子を覆う透明樹脂で充填され得る。LED素子から発せられた励起光は透明樹脂を透過し、蛍光部材に入射する。蛍光部材中の各蛍光体粒子は励起光を吸収し、蛍光を発する。蛍光は例えば照明光として外部空間に出射される。 A light-emitting device is known that includes a housing, an LED (Light Emitting Diode) element, and a fluorescent material. The housing has a recess, and the LED element is located within the recess. The fluorescent material has a plate-like shape and is located so as to cover the opening of the recess in the housing. The fluorescent material includes a plate-like transparent material and a plurality of phosphor particles dispersed within the transparent material. The interior of the recess in the housing may be filled with a transparent resin that covers the LED element. Excitation light emitted from the LED element passes through the transparent resin and enters the fluorescent material. Each phosphor particle in the fluorescent material absorbs the excitation light and emits fluorescence. The fluorescence is emitted into external space, for example as illumination light.

 このような発光装置において、照明光の輝度を高めることが望まれている。 In such light-emitting devices, it is desirable to increase the brightness of the illumination light.

 本発明者は、輝度を向上させることができる発光装置1を創出した。以下、発光装置1の一例について説明する。 The inventor has created a light-emitting device 1 that can improve brightness. An example of the light-emitting device 1 is described below.

 <第1実施形態>
 <発光装置>
 図1は、第1実施形態に係る発光装置1の構成の一部の一例を概略的に示す断面図である。図2は、発光装置1の構成の一部の一例を概略的に示す平面図である。図2では、適宜に各部の図示が省略されている。図1は、図2のI-I断面を示している。
First Embodiment
<Light-emitting device>
Fig. 1 is a cross-sectional view schematically showing an example of a part of the configuration of a light-emitting device 1 according to a first embodiment. Fig. 2 is a plan view schematically showing an example of a part of the configuration of the light-emitting device 1. In Fig. 2, various parts are omitted as appropriate. Fig. 1 shows a cross section taken along line II of Fig. 2.

 発光装置1は、基板部2と、発光素子3(第1発光素子の一例に相当)と、波長変換部材4と、第1樹脂部材51と、第1放熱部材6とを含んでいる。以下では、まず、発光装置1の各構成の一例を概説し、その後、各構成について詳述する。 The light-emitting device 1 includes a substrate 2, a light-emitting element 3 (corresponding to an example of a first light-emitting element), a wavelength conversion member 4, a first resin member 51, and a first heat dissipation member 6. Below, we will first provide an overview of an example of each component of the light-emitting device 1, and then provide a detailed description of each component.

 発光素子3は基板部2の上に位置している。発光素子3は励起光を発する。波長変換部材4は発光素子3に対して基板部2とは逆側に位置している。言い換えれば、発光素子3は波長変換部材4と基板部2との間に位置している。波長変換部材4は発光素子3からの励起光に基づいて照明光を発する。照明光は外部の照明空間に出射される。波長変換部材4は照明光を発するとともに、熱も発生させる。この熱に伴って波長変換部材4の温度が高まると、波長変換部材4の発光効率が低下する。 The light-emitting element 3 is located on the substrate 2. The light-emitting element 3 emits excitation light. The wavelength conversion member 4 is located on the opposite side of the light-emitting element 3 from the substrate 2. In other words, the light-emitting element 3 is located between the wavelength conversion member 4 and the substrate 2. The wavelength conversion member 4 emits illumination light based on the excitation light from the light-emitting element 3. The illumination light is emitted into an external illumination space. In addition to emitting illumination light, the wavelength conversion member 4 also generates heat. When the temperature of the wavelength conversion member 4 increases due to this heat, the luminous efficiency of the wavelength conversion member 4 decreases.

 第1放熱部材6は基板部2と波長変換部材4との間に位置している。第1放熱部材6の熱伝導率は波長変換部材4の熱伝導率よりも高い。このため、波長変換部材4で発生した熱を、第1放熱部材6を通じて外部に放出させることができる。したがって、熱によって波長変換部材4の発光効率が低下する可能性を低減させることができる。 The first heat dissipation member 6 is located between the substrate portion 2 and the wavelength conversion member 4. The thermal conductivity of the first heat dissipation member 6 is higher than that of the wavelength conversion member 4. Therefore, heat generated in the wavelength conversion member 4 can be dissipated to the outside through the first heat dissipation member 6. This reduces the possibility that the luminous efficiency of the wavelength conversion member 4 will decrease due to heat.

 第1樹脂部材51は基板部2と波長変換部材4との間に位置しており、平面視において発光素子3を囲む環状形状を有している。第1樹脂部材51は第1放熱部材6よりも発光素子3に近い位置に位置している。逆に言えば、第1放熱部材6は第1樹脂部材51よりも外側に位置しており、第1樹脂部材51と間隔を隔てて隣り合っている。 The first resin member 51 is located between the substrate portion 2 and the wavelength conversion member 4, and has an annular shape that surrounds the light-emitting element 3 in a planar view. The first resin member 51 is located closer to the light-emitting element 3 than the first heat dissipation member 6. Conversely, the first heat dissipation member 6 is located outside the first resin member 51, and is adjacent to the first resin member 51 with a gap between them.

 第1樹脂部材51は励起光についての反射性を有していてもよい。第1樹脂部材51が反射性を有する場合、発光素子3から第1樹脂部材51に向かう励起光は第1樹脂部材51で反射し、その一部が波長変換部材4に入射する。このため、第1樹脂部材51の内径が、波長変換部材4に対する励起光の入射領域を規定する。第1樹脂部材51は第1放熱部材6よりも発光素子3に近い位置で発光素子3を囲んでいるので、第1樹脂部材51の内径を小さくすることができる。このため、波長変換部材4の入射領域をより小さくすることができる。つまり、励起光がより狭い入射領域に集中的に入射する。 The first resin member 51 may be reflective to the excitation light. If the first resin member 51 is reflective, the excitation light traveling from the light-emitting element 3 toward the first resin member 51 is reflected by the first resin member 51, and a portion of the reflected light enters the wavelength conversion member 4. Therefore, the inner diameter of the first resin member 51 defines the incidence area of the excitation light on the wavelength conversion member 4. Because the first resin member 51 surrounds the light-emitting element 3 at a position closer to the light-emitting element 3 than the first heat dissipation member 6, the inner diameter of the first resin member 51 can be made smaller. This allows the incidence area of the wavelength conversion member 4 to be made smaller. In other words, the excitation light is concentrated in a narrower incidence area.

 波長変換部材4は励起光に基づいて照明光を発するので、該入射領域が照明光の出射領域に相当し得る。このため、波長変換部材4はより小さい出力径かつより高い輝度で照明光を発することができる。照明光の全光束は例えば800ルーメン以上であってもよい。その一方で、高輝度の励起光が波長変換部材4に入射するので、波長変換部材4の熱劣化の可能性が高くなってしまう。しかしながら、本実施形態では、発光装置1は第1放熱部材6を含んでいるので、波長変換部材4の熱を効果的に逃がすことができる。したがって、発光装置1は高い信頼性で高輝度の照明光を出射することができる。 Since the wavelength conversion member 4 emits illumination light based on the excitation light, the incident area can correspond to the emission area of the illumination light. This allows the wavelength conversion member 4 to emit illumination light with a smaller output diameter and higher brightness. The total luminous flux of the illumination light may be, for example, 800 lumens or more. However, since high-brightness excitation light is incident on the wavelength conversion member 4, there is a high possibility of thermal degradation of the wavelength conversion member 4. However, in this embodiment, the light emitting device 1 includes the first heat dissipation member 6, which allows heat from the wavelength conversion member 4 to be effectively dissipated. Therefore, the light emitting device 1 can emit high-brightness illumination light with high reliability.

 <基板部>
 図1に示されるように、基板部2は基板21と絶縁膜22とを含んでいてもよい。基板21は板状形状を有し得る。基板21は第1面21aおよび第2面21bを有している。第1面21aは、基板21の厚さ方向において第2面21bと対向する面である。第1面21aおよび第2面21bは平坦面であってもよい。基板21は平面視において矩形形状を有していてもよい。ここでいう平面視とは、視線が基板21の厚さ方向に沿う状態で対象物を見ることをいう。基板21は、一例として、正方形形状を有していてもよい。基板21の熱伝導率は高くてもよい。これにより、発光装置1の放熱性を向上させることができる。基板21の熱伝導率は例えば後述の波長変換部材4の熱伝導率よりも高くてもよい。一例として、基板21は銅またはアルミニウムなどの金属によって形成されてもよく、アルミナなどのセラミックによって形成されてもよい。
<Board>
As shown in FIG. 1 , the substrate unit 2 may include a substrate 21 and an insulating film 22. The substrate 21 may have a plate-like shape. The substrate 21 has a first surface 21a and a second surface 21b. The first surface 21a is a surface facing the second surface 21b in the thickness direction of the substrate 21. The first surface 21a and the second surface 21b may be flat surfaces. The substrate 21 may have a rectangular shape in a planar view. Here, a planar view refers to viewing an object with the line of sight along the thickness direction of the substrate 21. For example, the substrate 21 may have a square shape. The substrate 21 may have high thermal conductivity. This can improve the heat dissipation performance of the light-emitting device 1. The thermal conductivity of the substrate 21 may be higher than that of the wavelength conversion member 4, which will be described later. For example, the substrate 21 may be formed of a metal such as copper or aluminum, or a ceramic such as alumina.

 絶縁膜22は基板21の第1面21a上に位置している。絶縁膜22は基板21の第1面21aの全面に位置していてもよい。絶縁膜22は例えば酸化膜または窒化膜であってもよい。 The insulating film 22 is located on the first surface 21a of the substrate 21. The insulating film 22 may be located over the entire first surface 21a of the substrate 21. The insulating film 22 may be, for example, an oxide film or a nitride film.

 図1に示されるように、絶縁膜22の上には導電パターン7が位置していてもよい。導電パターン7は、発光素子3に電力を供給するためのパターンである。導電パターン7は例えば金などの金属によって形成される。導電パターン7は第1導電パターン71と第2導電パターン72とを含む。第1導電パターン71と第2導電パターン72との間には、不図示の電源によって直流電圧が印加される。導電パターン7は基板部2に属しているともいえる。基板部2は配線基板であるともいえる。 As shown in FIG. 1, a conductive pattern 7 may be located on the insulating film 22. The conductive pattern 7 is a pattern for supplying power to the light-emitting element 3. The conductive pattern 7 is formed of a metal such as gold. The conductive pattern 7 includes a first conductive pattern 71 and a second conductive pattern 72. A DC voltage is applied between the first conductive pattern 71 and the second conductive pattern 72 by a power supply (not shown). The conductive pattern 7 can also be said to belong to the substrate portion 2. The substrate portion 2 can also be said to be a wiring board.

 図2に示されるように、第2導電パターン72は、素子電極72aと、外部電極72bと、配線72cとを含んでもよい。素子電極72aは平面視において円形状を有してもよい。素子電極72aは平面視において基板21の中央に位置してもよい。後述のように、素子電極72aには、発光素子3が電気的に接続される。 As shown in FIG. 2, the second conductive pattern 72 may include an element electrode 72a, an external electrode 72b, and wiring 72c. The element electrode 72a may have a circular shape in a planar view. The element electrode 72a may be located in the center of the substrate 21 in a planar view. As described below, the light-emitting element 3 is electrically connected to the element electrode 72a.

 外部電極72bは平面視において基板21の角部に位置してもよい。外部電極72bは平面視において矩形形状を有してもよい。外部電極72bには、配線86の一端が接続されている。 The external electrode 72b may be located at a corner of the substrate 21 in a plan view. The external electrode 72b may have a rectangular shape in a plan view. One end of the wiring 86 is connected to the external electrode 72b.

 配線72cは素子電極72aおよび外部電極72bを電気的に接続する。配線72cは帯状形状を有しており、素子電極72aから外部電極72bに直線状に延びてもよい。配線72cは例えば基板21の対角線に沿って延びている。素子電極72aの直径は配線72cの幅よりも大きくてもよく、外部電極72bの対角の長さは配線72cの幅よりも大きくてもよい。 The wiring 72c electrically connects the element electrode 72a and the external electrode 72b. The wiring 72c has a strip shape and may extend linearly from the element electrode 72a to the external electrode 72b. The wiring 72c extends, for example, along a diagonal line of the substrate 21. The diameter of the element electrode 72a may be larger than the width of the wiring 72c, and the diagonal length of the external electrode 72b may be larger than the width of the wiring 72c.

 図2に示されるように、第1導電パターン71は、素子電極71aと、外部電極71bと、配線71cとを含んでもよい。図2に示されるように、素子電極71aは、素子電極72aと同心状の円弧形状を有していてもよい。素子電極71aは間隔を隔てて素子電極72aと径方向において並んでいる。素子電極71aは素子電極72aの径方向外側に位置してもよい。素子電極71aの中心角は180度よりも大きくてもよい。配線72cは素子電極71aの円弧の両端の間を通過して延びている。素子電極71aには、後述のように、発光素子3が電気的に接続される。 As shown in FIG. 2, the first conductive pattern 71 may include an element electrode 71a, an external electrode 71b, and wiring 71c. As shown in FIG. 2, the element electrode 71a may have an arc shape concentric with the element electrode 72a. The element electrode 71a is aligned radially with the element electrode 72a at a distance. The element electrode 71a may be positioned radially outward of the element electrode 72a. The central angle of the element electrode 71a may be greater than 180 degrees. The wiring 72c extends, passing between both ends of the arc of the element electrode 71a. The light-emitting element 3 is electrically connected to the element electrode 71a, as described below.

 外部電極71bは平面視において、外部電極72bと対角となる基板21の角部に位置してもよい。外部電極71bは平面視において矩形形状を有してもよい。外部電極71bには、配線85の一端が接続される。 In a plan view, the external electrode 71b may be located at a corner of the substrate 21 that is diagonally opposite the external electrode 72b. The external electrode 71b may have a rectangular shape in a plan view. One end of the wiring 85 is connected to the external electrode 71b.

 配線71cは素子電極71aおよび外部電極71bを電気的に接続する。配線71cは例えば基板21の対角線に沿って延びている。素子電極71aの内径は配線71cの幅よりも大きくてもよく、外部電極71bの対角の長さは配線71cの幅よりも大きくてもよい。 The wiring 71c electrically connects the element electrode 71a and the external electrode 71b. The wiring 71c extends, for example, along a diagonal line of the substrate 21. The inner diameter of the element electrode 71a may be larger than the width of the wiring 71c, and the diagonal length of the external electrode 71b may be larger than the width of the wiring 71c.

 <発光素子>
 発光素子3は励起光を発する。励起光には、例えば、紫色、青紫色または青色などの単色の光が適用される。より具体的には、励起光には、例えば、405ナノメートル(nm)の波長に強度のピークを有する紫色の光、420nmの波長に強度のピークを有する青紫の光および450nmの波長に強度のピークを有する青色の光のいずれかを適用することができる。
<Light-emitting element>
The light-emitting element 3 emits excitation light. Monochromatic light such as purple, blue-violet, or blue is used as the excitation light. More specifically, the excitation light may be any of purple light having an intensity peak at a wavelength of 405 nanometers (nm), blue-violet light having an intensity peak at a wavelength of 420 nm, and blue light having an intensity peak at a wavelength of 450 nm.

 発光素子3は基板部2上に位置している。発光素子3は板状形状を有していてもよい。発光素子3は、自身の厚さ方向が基板21の厚さ方向に沿う姿勢で、基板部2上に位置していてもよい。発光素子3は、厚さ方向において対向する第1面3aおよび第2面3bを有し、第2面3bが基板部2側に位置している。第1面3aには第1素子電極(不図示)が形成されてもよく、第2面3bには第2素子電極(不図示)が形成されてもよい。 The light-emitting element 3 is located on the substrate portion 2. The light-emitting element 3 may have a plate-like shape. The light-emitting element 3 may be located on the substrate portion 2 with its thickness direction aligned with the thickness direction of the substrate 21. The light-emitting element 3 has a first surface 3a and a second surface 3b that face each other in the thickness direction, with the second surface 3b located on the substrate portion 2 side. A first element electrode (not shown) may be formed on the first surface 3a, and a second element electrode (not shown) may be formed on the second surface 3b.

 発光素子3は、例えば、半導体発光素子である。具体的な一例として、発光素子3は、p型の半導体層、n型の半導体層、第1素子電極および第2素子電極を含む。p型の半導体層およびn型の半導体層は厚さ方向において隣り合っており、互いに接合され得る。第1素子電極はp型およびn型の半導体層の一方に接続され、第2素子電極はp型およびn型の半導体層の他方に接続される。第1素子電極および第2素子電極は例えば金属で形成される。第1素子電極と第2素子電極との間に直流電圧が印加されることにより、例えば、p型半導体層とn型の半導体層との接合部において励起光が発生する。発光素子3は例えばLED(Light Emitting Diode)素子である。 The light-emitting element 3 is, for example, a semiconductor light-emitting element. As a specific example, the light-emitting element 3 includes a p-type semiconductor layer, an n-type semiconductor layer, a first element electrode, and a second element electrode. The p-type semiconductor layer and the n-type semiconductor layer are adjacent in the thickness direction and can be bonded to each other. The first element electrode is connected to one of the p-type and n-type semiconductor layers, and the second element electrode is connected to the other of the p-type and n-type semiconductor layers. The first element electrode and the second element electrode are formed of, for example, metal. When a DC voltage is applied between the first element electrode and the second element electrode, excitation light is generated, for example, at the junction between the p-type semiconductor layer and the n-type semiconductor layer. The light-emitting element 3 is, for example, an LED (Light Emitting Diode) element.

 図1に示されるように、発光素子3は第2導電パターン72の素子電極72a(第1電極の一例に相当)上に位置していてもよい。発光素子3の第2面3bの第2素子電極は素子電極72aに電気的に接続される。例えば、半田などの電極材によって発光素子3の第2素子電極が素子電極72aに接続されてもよい。発光素子3の第1素子電極は例えばワイヤ31を介して、第1導電パターン71の素子電極71aに接続される。 As shown in FIG. 1, the light-emitting element 3 may be located on an element electrode 72a (corresponding to an example of a first electrode) of the second conductive pattern 72. The second element electrode on the second surface 3b of the light-emitting element 3 is electrically connected to the element electrode 72a. For example, the second element electrode of the light-emitting element 3 may be connected to the element electrode 72a by an electrode material such as solder. The first element electrode of the light-emitting element 3 is connected to the element electrode 71a of the first conductive pattern 71, for example, via a wire 31.

 不図示の電源が配線85および配線86を介して第1導電パターン71と第2導電パターン72との間に電圧を出力すると、発光素子3は励起光を発する。発光素子3はこの発光に伴って、熱も発生する。この熱は例えば絶縁膜22を通じて基板21に伝達される。 When a power supply (not shown) outputs a voltage between the first conductive pattern 71 and the second conductive pattern 72 via wiring 85 and wiring 86, the light-emitting element 3 emits excitation light. As the light is emitted, the light-emitting element 3 also generates heat. This heat is transferred to the substrate 21, for example, via the insulating film 22.

 <反射材>
 図1に示されるように、発光装置1は反射材8をさらに含んでいてもよい。反射材8は平面視において発光素子3と隣り合う位置で導電パターン7および絶縁膜22上に位置している。反射材8は、平面視において発光素子3と重ならない領域に位置してもよい。反射材8は発光素子3の側面の全周に接していてもよい。平面視において、反射材8は後述の第1放熱部材6と発光素子3との間に位置している。反射材8は絶縁性を有している。このため、第1導電パターン71と第2導電パターン72との間で短絡が生じる可能性を低減させることができる。
<Reflective material>
As shown in FIG. 1 , the light emitting device 1 may further include a reflective material 8. The reflective material 8 is located on the conductive pattern 7 and the insulating film 22 at a position adjacent to the light emitting element 3 in a planar view. The reflective material 8 may be located in an area that does not overlap with the light emitting element 3 in a planar view. The reflective material 8 may be in contact with the entire periphery of the side surface of the light emitting element 3. In a planar view, the reflective material 8 is located between the first heat dissipation member 6 (described below) and the light emitting element 3. The reflective material 8 has insulating properties. This reduces the possibility of a short circuit occurring between the first conductive pattern 71 and the second conductive pattern 72.

 反射材8は、励起光または照明光についての反射性を有している。励起光または照明光についての反射材8の反射率(最大値)は、例えば、50%以上であってもよく、60%以上であってもよく、70%以上であってもよく、80%以上であってもよく、90%以上であってもよい。反射材8は例えば樹脂によって形成される。 The reflector 8 is reflective to excitation light or illumination light. The reflectance (maximum value) of the reflector 8 to excitation light or illumination light may be, for example, 50% or more, 60% or more, 70% or more, 80% or more, or 90% or more. The reflector 8 is formed, for example, from resin.

 <波長変換部材>
 波長変換部材4は、発光素子3に対して、基板部2とは逆側に位置している。言い換えれば、発光素子3は波長変換部材4と基板部2との間に位置している。波長変換部材4は基板21の厚さ方向において発光素子3と間隔を隔てて対向する。波長変換部材4には、発光素子3からの励起光が入射する。波長変換部材4は該励起光に基づいて照明光を発する。波長変換部材4は例えば励起光を吸収し、該励起光の波長とは異なる波長を有する照明光を発する。波長変換部材4は例えば蛍光体を含む。この場合、照明光は蛍光である。波長変換部材4は無機材料によって形成され得る。波長変換部材4はセラミックであってもよい。波長変換部材4は、焼結体、ガラス、結晶化ガラスおよび結晶のいずれか一つを含み得る。
<Wavelength conversion material>
The wavelength conversion member 4 is located on the opposite side of the substrate unit 2 with respect to the light-emitting element 3. In other words, the light-emitting element 3 is located between the wavelength conversion member 4 and the substrate unit 2. The wavelength conversion member 4 faces the light-emitting element 3 at an interval in the thickness direction of the substrate 21. Excitation light from the light-emitting element 3 is incident on the wavelength conversion member 4. The wavelength conversion member 4 emits illumination light based on the excitation light. The wavelength conversion member 4 absorbs, for example, the excitation light and emits illumination light having a wavelength different from the wavelength of the excitation light. The wavelength conversion member 4 contains, for example, a phosphor. In this case, the illumination light is fluorescence. The wavelength conversion member 4 may be made of an inorganic material. The wavelength conversion member 4 may be ceramic. The wavelength conversion member 4 may include any one of a sintered body, glass, crystallized glass, and crystal.

 結晶体は、例えば多結晶酸化アルミニウム(Al)に蛍光体粒子を分散させて焼結された多結晶セラミックを含む。Alの体積濃度は例えば80vol%以上かつ99.99vol%以下であり、蛍光体粒子の体積濃度は例えば0.01vol%以上かつ20vol%以下である。蛍光体粒子の一例は後述する。 The crystal includes, for example , polycrystalline ceramics obtained by dispersing phosphor particles in polycrystalline aluminum oxide ( Al2O3 ) and sintering the resulting material. The volume concentration of Al2O3 is, for example, 80 vol% or more and 99.99 vol% or less, and the volume concentration of the phosphor particles is, for example, 0.01 vol% or more and 20 vol% or less. An example of the phosphor particles will be described later.

 ガラスは、例えば酸化カルシウム(CaO)、Al、酸化シリコン(SiO)、窒化アルミニウム(AlN)および希土類元素の少なくともいずれかを含有する。希土類元素は、セリウム(Ce)、プラセオジム(Pr)、ユウロピウム(Eu)、テルビウム(Tb)、ジスプロジウム(Dy)、ツリウム(Tm)、エルビウム(Er)およびネオジム(Nd)の少なくともいずれかを含む。CaOのモル濃度は例えば0mol%以上かつ50mol%以下であり、Alのモル濃度は例えば0mol%以上かつ30mol%以下であり、SiOのモル濃度は例えば5mol%以上かつ60mol%以下であり、AlNのモル濃度は例えば5mol%以上かつ40mol%以下であり、希土類元素のモル濃度は例えば0.1mol%以上かつ20mol%以下である。 The glass contains, for example, calcium oxide (CaO 2 ), Al 2 O 3 , silicon oxide (SiO 2 ), aluminum nitride (AlN), and at least one of rare earth elements. The rare earth elements include at least one of cerium (Ce), praseodymium (Pr), europium (Eu), terbium (Tb), dysprosium (Dy), thulium (Tm), erbium (Er), and neodymium (Nd). The molar concentration of CaO 2 is, for example, 0 mol% or more and 50 mol% or less, the molar concentration of Al 2 O 3 is, for example, 0 mol% or more and 30 mol% or less, the molar concentration of SiO 2 is, for example, 5 mol% or more and 60 mol% or less, the molar concentration of AlN is, for example, 5 mol% or more and 40 mol% or less, and the molar concentration of the rare earth elements is, for example, 0.1 mol% or more and 20 mol% or less.

 結晶化ガラスは、例えばAl、SiOおよび次に説明するMを母材ガラスとして含有する。Mは、酸化マグネシウム(MgO)、CaO、酸化ストロンチウム(SrO)、酸化バリウム(BaO)および酸化イットリウム(Y)の少なくともいずれかを含む。SiOのモル濃度は例えば5mol%以上かつ50mol以下%であり、Alのモル濃度は例えば10mol%以上かつ50mol%以下であり、Mのモル濃度は例えば5mol%以上かつ70mol%以下である。結晶化ガラスは、さらに、酸化チタン(TiO)、酸化ジルコニウム(ZrO)、酸化リン(P)および酸化リチウム(LiO)の少なくともいずれかを含んでもよい。これらの合量のモル濃度は例えば0mol%以上かつ10mol%以下である。結晶化ガラスは賦活剤として希土類元素を含んでいてもよい。希土類元素の一例は上述の通りである。希土類元素のモル濃度は例えば0.01mol%以上かつ5mol%以下である。 The crystallized glass contains, for example, Al 2 O 3 , SiO 2 , and M, which will be described below, as a base glass. M includes at least one of magnesium oxide (MgO), CaO, strontium oxide (SrO), barium oxide (BaO), and yttrium oxide (Y 2 O 3 ). The molar concentration of SiO 2 is, for example, 5 mol% or more and 50 mol% or less, the molar concentration of Al 2 O 3 is, for example, 10 mol% or more and 50 mol% or less, and the molar concentration of M is, for example, 5 mol% or more and 70 mol% or less. The crystallized glass may further contain at least one of titanium oxide (TiO 2 ), zirconium oxide (ZrO 2 ), phosphorus oxide (P 2 O 5 ), and lithium oxide (Li 2 O). The molar concentration of the total amount of these is, for example, 0 mol% or more and 10 mol% or less. The crystallized glass may contain a rare earth element as an activator. Examples of the rare earth element are as described above. The molar concentration of the rare earth element is, for example, 0.01 mol % or more and 5 mol % or less.

 結晶は、例えば、(Y,Gd)(Al,Ga)12:Ce3+の単結晶またはサファイアとの共晶を含む。 The crystals include, for example, (Y,Gd) 3 (Al,Ga) 5 O 12 :Ce 3+ single crystals or eutectic with sapphire.

 あるいは、波長変換部材4は、複数の蛍光体粒子41と、複数の蛍光体粒子41を結合するバインダー層42とを含んでいてもよい。複数の蛍光体粒子41のそれぞれは、例えば、励起光を吸収して蛍光を発する蛍光体の粒子である。複数の蛍光体粒子41は、例えば、励起光の照射に応じて励起光の波長スペクトルとは異なる1種類以上の波長スペクトルの蛍光を発する1種類以上の蛍光体粒子を含む。1種類以上の蛍光体粒子は、例えば、励起光の照射に応じて相互に異なる波長スペクトルを有する蛍光を発する複数の種類の蛍光体粒子を含んでいてよい。複数の種類の蛍光体粒子は、例えば、赤色蛍光体の粒子と、緑色蛍光体の粒子と、青色蛍光体の粒子と、を含む。赤色蛍光体は、励起光の照射に応じて赤色(R)の蛍光を発する蛍光体である。緑色蛍光体は、励起光の照射に応じて緑色(G)の蛍光を発する蛍光体である。青色蛍光体は、励起光の照射に応じて青色(B)の蛍光を発する蛍光体である。 Alternatively, the wavelength conversion member 4 may include a plurality of phosphor particles 41 and a binder layer 42 that binds the plurality of phosphor particles 41 together. Each of the plurality of phosphor particles 41 is, for example, a phosphor particle that absorbs excitation light and emits fluorescence. The plurality of phosphor particles 41 may include, for example, one or more types of phosphor particles that emit fluorescence of one or more wavelength spectra different from the wavelength spectrum of the excitation light in response to irradiation with excitation light. The one or more types of phosphor particles may include, for example, multiple types of phosphor particles that emit fluorescence having mutually different wavelength spectra in response to irradiation with excitation light. The multiple types of phosphor particles may include, for example, red phosphor particles, green phosphor particles, and blue phosphor particles. The red phosphor is a phosphor that emits red (R) fluorescence in response to irradiation with excitation light. The green phosphor is a phosphor that emits green (G) fluorescence in response to irradiation with excitation light. The blue phosphor is a phosphor that emits blue (B) fluorescence in response to irradiation with excitation light.

 複数の蛍光体粒子を構成する蛍光体としては、例えば、ユウロピウム(Eu)、セリウム(Ce)もしくはイットリウム(Y)などのレアアースを、リン酸塩、酸化物、ケイ酸塩、窒化物、フッ化物、アルミン酸塩または硫化物などの化合物の形態で含む蛍光体が採用されてよい。 The phosphor that constitutes the multiple phosphor particles may be, for example, a phosphor containing a rare earth such as europium (Eu), cerium (Ce), or yttrium (Y) in the form of a compound such as a phosphate, oxide, silicate, nitride, fluoride, aluminate, or sulfide.

 赤色蛍光体として、例えば、励起光の照射に応じて発する蛍光の強度のピークの波長が620nmから750nm程度の範囲にある蛍光体を採用してよい。赤色蛍光体の材料としては、例えば、CaAlSiN:Eu、YS:Eu、Y:Eu、SrCaClAlSiN:Eu2+またはCaAlSi(ON):Euなどを採用してよい。赤色蛍光体の蛍光体粒子として、例えば、リン(P)を含まない蛍光体粒子(非リン系の蛍光体粒子ともいう)を採用してもよいし、窒化物を含む蛍光体粒子を採用してもよい。 The red phosphor may be, for example, a phosphor whose peak fluorescence intensity wavelength in response to irradiation with excitation light is in the range of approximately 620 nm to 750 nm . Examples of materials for the red phosphor include CaAlSiN3 :Eu, Y3O3S :Eu, Y3O3 :Eu, SrCaClAlSiN3:Eu2 + , and CaAlSi(ON) 3 : Eu. The red phosphor particles may be, for example, phosphor particles that do not contain phosphorus (P) (also referred to as non-phosphorus phosphor particles), or phosphor particles that contain nitride.

 緑色蛍光体として、例えば、励起光の照射に応じて発する蛍光の強度のピークの波長が495nmから570nm程度の範囲にある蛍光体を採用してよい。緑色蛍光体の材料としては、例えば、β-サイアロン(β-SiAlON:Eu)、SrSi(O,Cl):Eu、(Sr,Ba,Mg)SiO:Eu 2+、ZnS:Cu,AlまたはZnSiO:Mnなどを採用してよい。緑色蛍光体の蛍光体粒子として、例えば、リン(P)を含まない蛍光体粒子(非リン系の蛍光体粒子)を採用してもよいし、窒化物を含む蛍光体粒子を採用してもよい。 The green phosphor may be, for example, a phosphor whose peak fluorescence intensity wavelength in response to irradiation with excitation light is in the range of approximately 495 nm to 570 nm. Examples of materials that may be used for the green phosphor include β-sialon (β-SiAlON:Eu), SrSi 2 (O, Cl) 2 N 2 :Eu, (Sr, Ba, Mg) 2 SiO 4 :Eu 2 2+ , ZnS:Cu, Al, and Zn 2 SiO 4 :Mn. For example, phosphor particles that do not contain phosphorus (P) (non-phosphorus phosphor particles) or phosphor particles containing nitride may be used as the phosphor particles of the green phosphor.

 青色蛍光体として、例えば、励起光の照射に応じて発する蛍光の強度のピークの波長が450nmから495nm程度の範囲にある蛍光体を採用してよい。青色蛍光体の材料としては、例えば、(Ba,Sr)MgAl1017:Eu、BaMgAl1017:Eu、(Sr,Ca,Ba)10(POCl:Eu、(Sr,Ba)10(POCl:Euまたはα-サイアロンなどを採用してよい。青色蛍光体の蛍光体粒子として、例えば、リン(P)を含む蛍光体粒子(リン系の蛍光体粒子ともいう)を採用してもよいし、窒化物を含む蛍光体粒子を採用してもよい。 The blue phosphor may be, for example, a phosphor that emits fluorescent light in response to irradiation with excitation light with a peak intensity wavelength in the range of approximately 450 nm to 495 nm. Examples of materials that may be used for the blue phosphor include (Ba,Sr) MgAl10O17 :Eu, BaMgAl10O17 :Eu, (Sr,Ca,Ba) 10 ( PO4 ) 6Cl2 : Eu, (Sr,Ba)10 ( PO4 ) 6Cl2 : Eu , and α-sialon. Examples of phosphor particles that may be used for the blue phosphor include phosphor particles containing phosphorus (P) (also referred to as phosphorus-based phosphor particles), and phosphor particles containing nitride.

 蛍光体粒子41の粒径は、例えば、5マイクロメートル(μm)から50μm程度であってよい。 The particle size of the phosphor particles 41 may be, for example, approximately 5 micrometers (μm) to 50 μm.

 蛍光体粒子41は励起光の吸収により発熱する。このため、蛍光体粒子41の温度が上昇し得る。蛍光体粒子41の温度が高くなると、蛍光体粒子41の発光効率は低下するおそれがある。ここでいう蛍光体粒子41の発光効率とは、例えば、蛍光体粒子41に入射する励起光の光子数に対する、蛍光体粒子41からの蛍光の光子数の比である。蛍光体粒子41の温度が高くなりすぎると、蛍光体粒子41は消光するおそれもある。このような蛍光体粒子41の発光効率の低下および消光は望ましくないので、蛍光体粒子41の温度上昇の緩和が望まれる。 The phosphor particles 41 generate heat when they absorb the excitation light. This can cause the temperature of the phosphor particles 41 to rise. If the temperature of the phosphor particles 41 increases, the luminous efficiency of the phosphor particles 41 may decrease. The luminous efficiency of the phosphor particles 41 here refers to, for example, the ratio of the number of photons of the fluorescent light from the phosphor particles 41 to the number of photons of the excitation light incident on the phosphor particles 41. If the temperature of the phosphor particles 41 increases too much, the phosphor particles 41 may quench. Such a decrease in the luminous efficiency and quenching of the phosphor particles 41 is undesirable, so it is desirable to mitigate the temperature rise of the phosphor particles 41.

 バインダー層42は励起光および蛍光についての透光性を有している。バインダー層42は複数の蛍光体粒子41どうしを接合している。換言すれば、波長変換部材4は、バインダー層42において複数の蛍光体粒子41が分散している形態を有する。バインダー層42の材料としては、例えば、樹脂またはガラスが採用される。換言すれば、バインダー層42は、有機樹脂または無機材料を含む。バインダー層42は無機材料として、主成分にガラスを含んでいてよい。主成分とは、物質を構成している成分のうちの含有されている比率(含有率ともいう)が最も大きい(高い)成分のことを意味する。ガラスは、例えば、励起光を波長変換部材4の内部まで透過させるとともに、励起光の照射に応じて励起された蛍光体粒子が発する蛍光を波長変換部材4の外部に放射するために透光性を有する。換言すれば、ガラスは、例えば、励起光および蛍光を透過させる透光性を有する。バインダー層42はガラスマトリックスとも呼ばれ得る。バインダー層42が無機材料(例えばガラスマトリックス)によって形成されていれば、有機樹脂に比べて、バインダー層42に熱劣化が生じにくい。 The binder layer 42 is translucent for excitation light and fluorescence. The binder layer 42 bonds multiple phosphor particles 41 together. In other words, the wavelength conversion member 4 has a form in which multiple phosphor particles 41 are dispersed in the binder layer 42. The binder layer 42 may be made of, for example, resin or glass. In other words, the binder layer 42 includes an organic resin or an inorganic material. The binder layer 42 may include glass as a primary inorganic material. The term "primary component" refers to the component that is contained in the largest proportion (also referred to as the content) of the components constituting the substance. Glass is translucent, for example, to allow excitation light to penetrate into the interior of the wavelength conversion member 4 and to radiate fluorescence emitted by phosphor particles excited in response to irradiation with excitation light to the outside of the wavelength conversion member 4. In other words, glass is translucent, for example, to allow excitation light and fluorescence to pass through. The binder layer 42 may also be referred to as a glass matrix. If the binder layer 42 is formed from an inorganic material (e.g., a glass matrix), the binder layer 42 is less susceptible to thermal degradation than an organic resin.

 バインダー層42を構成しているガラスとして、例えば、低融点ガラスを採用してよい。低融点ガラスとして、例えば、融点(Tm)が摂氏200度(200℃)から700℃の酸化物ガラスを採用してよい。この低融点ガラスとしての酸化物ガラスは、例えば、100℃から600℃の範囲内のガラス転移点(Tg)と、150℃から650℃の範囲内の結晶化温度(Tc)と、を有する。酸化物ガラスとして、例えば、二酸化ケイ素(SiO)、酸化アルミニウム(Al)、酸化ホウ素(B)、酸化ナトリウム(Na)、酸化カリウム(KO)、酸化リチウム(LiO)、酸化カルシウム(CaO)、酸化バリウム(BaO)、酸化亜鉛(ZnO)、一酸化鉛(PbO)および五酸化二リン(P)のうちの2つ以上の酸化物を主成分として含有するガラスを採用してよい。換言すれば、酸化物ガラスは、金属元素の酸化物を含んでいてもよいし、半金属元素の酸化物を含んでいてもよい。 For example, low-melting-point glass may be used as the glass constituting the binder layer 42. For example, oxide glass having a melting point (Tm) of 200 degrees Celsius (200°C) to 700°C may be used as the low-melting-point glass. The oxide glass serving as the low-melting-point glass has a glass transition point (Tg) in the range of 100°C to 600°C and a crystallization temperature (Tc) in the range of 150°C to 650°C. The oxide glass may be, for example, a glass containing two or more oxides selected from silicon dioxide ( SiO2 ), aluminum oxide ( Al2O3 ), boron oxide ( B2O3 ), sodium oxide ( Na2O3 ), potassium oxide ( K2O ), lithium oxide ( Li2O ), calcium oxide (CaO), barium oxide (BaO), zinc oxide ( ZnO), lead monoxide (PbO), and diphosphorus pentoxide ( P2O5 ) as its main components. In other words, the oxide glass may contain an oxide of a metal element or an oxide of a metalloid element.

 バインダー層42は、例えば、ガラスのアモルファス相(非晶質相)を含む。この非晶質相は、例えば、低融点ガラスのアモルファス相の部分であってよい。ガラスで構成された非晶質相は、例えば、励起光および蛍光を透過させる透光性を有する。 The binder layer 42 contains, for example, an amorphous phase of glass. This amorphous phase may be, for example, the amorphous phase portion of a low-melting-point glass. The amorphous phase made of glass has translucency, allowing, for example, excitation light and fluorescent light to pass through.

 <第1樹脂部材>
 第1樹脂部材51は基板部2と波長変換部材4との間に位置している。図2に示されるように、第1樹脂部材51は平面視において環状形状を有していてもよい。第1樹脂部材51は平面視において発光素子3を囲んだ状態で位置していてもよい(図1も参照)。第1樹脂部材51はダム材とも呼ばれ得る。平面視において、第1樹脂部材51の内側の輪郭(つまり、内周縁)は発光素子3の輪郭よりも外側にあってもよい。言い換えれば、発光素子3は第1樹脂部材51と平面視において重なり合わなくてよい。この場合、第1樹脂部材51は発光素子3を密閉空間に封止することができる。また、発光素子3は第1樹脂部材51と平面視において部分的に重なっていてもよい。図1に示されるように、第1樹脂部材51は反射材8および波長変換部材4に接し得る。第1樹脂部材51は反射材8および波長変換部材4にそれぞれ接合していてもよい。
<First resin member>
The first resin member 51 is located between the substrate unit 2 and the wavelength conversion member 4. As shown in FIG. 2, the first resin member 51 may have an annular shape in a planar view. The first resin member 51 may be located so as to surround the light-emitting element 3 in a planar view (see also FIG. 1). The first resin member 51 may also be called a dam member. In a planar view, the inner contour (i.e., inner peripheral edge) of the first resin member 51 may be located outside the contour of the light-emitting element 3. In other words, the light-emitting element 3 does not need to overlap the first resin member 51 in a planar view. In this case, the first resin member 51 can seal the light-emitting element 3 in a sealed space. The light-emitting element 3 may also partially overlap the first resin member 51 in a planar view. As shown in FIG. 1, the first resin member 51 may be in contact with the reflector 8 and the wavelength conversion member 4. The first resin member 51 may be bonded to the reflector 8 and the wavelength conversion member 4, respectively.

 第1樹脂部材51は励起光についての反射性を有していてもよい。励起光についての第1樹脂部材51の反射率は、例えば、50%以上であってもよく、60%以上であってもよく、70%以上であってもよく、80%以上であってもよく、90%以上であってもよい。第1樹脂部材51は照明光についての反射性を有してもよい。照明光についての第1樹脂部材51の反射率(最大値)は、例えば、50%以上であってもよく、60%以上であってもよく、70%以上であってもよく、80%以上であってもよく、90%以上であってもよい。第1樹脂部材51は例えば白色の表面を有していてもよい。 The first resin member 51 may be reflective to the excitation light. The reflectance of the first resin member 51 to the excitation light may be, for example, 50% or more, 60% or more, 70% or more, 80% or more, or 90% or more. The first resin member 51 may be reflective to the illumination light. The reflectance (maximum value) of the first resin member 51 to the illumination light may be, for example, 50% or more, 60% or more, 70% or more, 80% or more, or 90% or more. The first resin member 51 may have a white surface, for example.

 第1樹脂部材51は絶縁性を有していてもよい。第1樹脂部材51は、例えば、エポキシ樹脂、フェノール樹脂、ポリフタルアミド、シリコーン樹脂、合成ゴム、天然ゴムまたはシリコーンゴムなどの樹脂を含む。第1樹脂部材51は、上記樹脂との屈率差が大きい反射材料として、例えば、酸化チタン、酸化アルミニウムおよび酸化マグネシウムの少なくともいずれかの粉末を含んでいてもよい。あるいは、第1樹脂部材51は、反射率の高い反射材料として、銀、アルミニウムまたは酸化アルミニウムなどのフィラーを含んでいてもよい。これにより、第1樹脂部材51の反射性を向上させることができる。 The first resin member 51 may be insulating. The first resin member 51 includes a resin such as epoxy resin, phenolic resin, polyphthalamide, silicone resin, synthetic rubber, natural rubber, or silicone rubber. The first resin member 51 may include a reflective material with a refractive index significantly different from that of the above resin, such as a powder of at least one of titanium oxide, aluminum oxide, and magnesium oxide. Alternatively, the first resin member 51 may include a filler such as silver, aluminum, or aluminum oxide as a reflective material with high reflectivity. This can improve the reflectivity of the first resin member 51.

 第1樹脂部材51が反射性を有している場合、発光素子3が発した励起光の一部は第1樹脂部材51で反射し、波長変換部材4に入射する。これにより、波長変換部材4のうち平面視において第1樹脂部材51で囲まれた部分に集中的に励起光を入射させることができる。ひいては、波長変換部材4はより小さい出射径かつより高輝度で照明光を発することができる。その一方で、波長変換部材4に高輝度の励起光が入射するので、熱による劣化量が大きくなってしまう。 If the first resin member 51 is reflective, part of the excitation light emitted by the light-emitting element 3 is reflected by the first resin member 51 and enters the wavelength conversion member 4. This allows the excitation light to be concentrated on the part of the wavelength conversion member 4 that is surrounded by the first resin member 51 in a planar view. As a result, the wavelength conversion member 4 can emit illumination light with a smaller emission diameter and higher brightness. On the other hand, because high-brightness excitation light enters the wavelength conversion member 4, the amount of degradation due to heat increases.

 第1樹脂部材51は次のようにして形成され得る。すなわち、粘度の高い固化前の第1樹脂部材51を環状に塗布し、固化前の第1樹脂部材を、硬化剤、熱または光などによって固化させることにより、第1樹脂部材51が形成され得る。ここでいう固化とは、樹脂が硬化することを含む。固化前の第1樹脂部材51の粘度は高いので、第1樹脂部材51を高い精度で環状に成形することができる。つまり、出射径をより高い精度で調整することができる。 The first resin member 51 can be formed as follows. That is, the first resin member 51 is applied in a ring shape before solidification and has a high viscosity, and then the first resin member before solidification is solidified using a curing agent, heat, light, or the like, thereby forming the first resin member 51. Here, solidification includes the hardening of the resin. Because the viscosity of the first resin member 51 before solidification is high, the first resin member 51 can be molded into a ring shape with high precision. In other words, the emission diameter can be adjusted with even greater precision.

 図1に示されるように、第1樹脂部材51は基板21の厚さ方向において素子電極71aと部分的に対向していてもよい。言い換えれば、第1樹脂部材51の少なくとも一部が平面視において素子電極71aの少なくとも一部と重なっていてもよい。これによれば、第1樹脂部材51の内径をより小さくすることができる。このため、波長変換部材4はさらに小さい出射径かつさらに高輝度で照明光を発することができる。第1樹脂部材51の少なくとも一部は素子電極72aの少なくとも一部と重なっていてもよい。この場合、波長変換部材4はさらに小さい出射径かつさらに高輝度で照明光を発することができる。 As shown in FIG. 1, the first resin member 51 may partially face the element electrode 71a in the thickness direction of the substrate 21. In other words, at least a portion of the first resin member 51 may overlap at least a portion of the element electrode 71a in a planar view. This allows the inner diameter of the first resin member 51 to be made smaller. As a result, the wavelength conversion member 4 can emit illumination light with an even smaller emission diameter and higher brightness. At least a portion of the first resin member 51 may overlap at least a portion of the element electrode 72a. In this case, the wavelength conversion member 4 can emit illumination light with an even smaller emission diameter and higher brightness.

 <第1放熱部材>
 第1放熱部材6は基板部2と波長変換部材4との間に位置している。第1放熱部材6は平面視において第1樹脂部材51よりも外側に位置している。第1放熱部材6は第1樹脂部材51と接しておらず、平面視において第1樹脂部材51と離れている。つまり、第1放熱部材6は、基板21の第1面と平行な方向において、第1樹脂部材51と間隔を隔てて隣り合っている。第1放熱部材6は平面視において導電パターン7を避けた領域に位置していてもよい。第1放熱部材6は板状形状を有していてもよい。第1放熱部材6は、基板21の厚さ方向において互いに対向する第1面6aと第2面6bとを有していてもよい。第1面6aおよび第2面6bは平坦面であってもよい。第1放熱部材6の第1面6aの一部は基板21の厚さ方向において波長変換部材4の周縁部と対向していてもよい。第1放熱部材6の第1面6aの当該一部は波長変換部材4の当該周縁部に接していてもよい。ここで、波長変換部材4の周縁部とは、例えば波長変換部材4の外周の縁から0.5mm以内の領域を含んでもよい。第1放熱部材6により、波長変換部材4の熱を基板部2に逃がすことができる。これにより、波長変換部材4が熱消光することにより発光効率が低下するおそれを低減できる。第1樹脂部材51を反射性部材とすることにより輝度を高めることができるものの、上述のように、波長変換部材4の熱劣化の程度が大きくなるおそれがある。このため、このような照明装置においては特に蛍光体の放熱性を高めることが特に有効である。
<First heat dissipation member>
The first heat dissipation member 6 is located between the substrate 2 and the wavelength conversion member 4. The first heat dissipation member 6 is located outside the first resin member 51 in a planar view. The first heat dissipation member 6 is not in contact with the first resin member 51 and is separated from the first resin member 51 in a planar view. In other words, the first heat dissipation member 6 is adjacent to the first resin member 51 at an interval in a direction parallel to the first surface of the substrate 21. The first heat dissipation member 6 may be located in a region avoiding the conductive pattern 7 in a planar view. The first heat dissipation member 6 may have a plate-like shape. The first heat dissipation member 6 may have a first surface 6a and a second surface 6b facing each other in the thickness direction of the substrate 21. The first surface 6a and the second surface 6b may be flat surfaces. A portion of the first surface 6a of the first heat dissipation member 6 may face the peripheral edge of the wavelength conversion member 4 in the thickness direction of the substrate 21. The portion of the first surface 6a of the first heat dissipation member 6 may be in contact with the peripheral portion of the wavelength conversion member 4. Here, the peripheral portion of the wavelength conversion member 4 may include, for example, a region within 0.5 mm from the outer periphery of the wavelength conversion member 4. The first heat dissipation member 6 allows heat from the wavelength conversion member 4 to be dissipated to the substrate portion 2. This reduces the risk of a decrease in luminous efficiency due to thermal quenching of the wavelength conversion member 4. Although brightness can be increased by making the first resin member 51 a reflective member, as described above, there is a risk that the degree of thermal degradation of the wavelength conversion member 4 may increase. For this reason, it is particularly effective to improve the heat dissipation properties of the phosphor in such lighting devices.

 第1放熱部材6の第2面6bと基板部2の絶縁膜22との間には、接着部材23が位置していてもよい。接着部材23は例えば放熱グリスである。放熱グリスは、例えば、シリコーンなどの樹脂と、該樹脂中に分散された高熱伝導性のフィラーとを含む。 An adhesive member 23 may be positioned between the second surface 6b of the first heat dissipation member 6 and the insulating film 22 of the substrate portion 2. The adhesive member 23 may be, for example, heat dissipation grease. Heat dissipation grease may contain, for example, a resin such as silicone and a highly thermally conductive filler dispersed in the resin.

 第1放熱部材6は、波長変換部材4の熱伝導率よりも高い熱伝導率を有する。例えば、第1放熱部材6は、銅またはアルミニウムなどの金属によって形成されてもよく、アルミナなどのセラミックによって形成されてもよく、サファイアなどの単結晶体によって形成されてもよい。 The first heat dissipation member 6 has a thermal conductivity higher than that of the wavelength conversion member 4. For example, the first heat dissipation member 6 may be made of a metal such as copper or aluminum, a ceramic such as alumina, or a single crystal such as sapphire.

 図2に示されるように、第1放熱部材6として放熱部材61および放熱部材62が位置していてもよい。平面視において、放熱部材61および放熱部材62は導電パターン7に対して互いに反対側に位置している。放熱部材61および放熱部材62は互いに同形状を有していてもよい。第1放熱部材6は略直角三角形状を有してもよく、その斜辺に凹部6cが形成されていてもよい。凹部6cは、平面視において、素子電極71aと間隔を隔てて隣り合う位置に形成されてもよい。凹部6cは、素子電極71aと同心状の円弧形状を有していてもよい。これによれば、第1放熱部材6と導電パターン7との間隔を狭くすることができる。つまり、第1放熱部材6の面積を大きくすることができる。したがって、発光装置1の放熱性を効果的に高めることができる。第1放熱部材6の平面視の面積は基板21の面積の半分以上であってもよい。 As shown in FIG. 2, the first heat dissipation member 6 may include heat dissipation members 61 and 62. In a plan view, the heat dissipation members 61 and 62 are located on opposite sides of the conductive pattern 7. The heat dissipation members 61 and 62 may have the same shape. The first heat dissipation member 6 may have a substantially right-angled triangular shape, with a recess 6c formed on its hypotenuse. The recess 6c may be formed adjacent to the element electrode 71a in a plan view with a gap therebetween. The recess 6c may have an arc shape concentric with the element electrode 71a. This allows the gap between the first heat dissipation member 6 and the conductive pattern 7 to be narrowed. In other words, the area of the first heat dissipation member 6 can be increased. This effectively improves the heat dissipation performance of the light emitting device 1. The area of the first heat dissipation member 6 in a plan view may be more than half the area of the substrate 21.

 <充填材>
 図1に示されるように、第1樹脂部材51によって囲まれた領域には、充填材53が位置していてもよい。充填材53は発光素子3を密着して覆っていてもよい。つまり、充填材53は発光素子3を封止していてもよい。充填材53は波長変換部材4に接合していてもよく、第1樹脂部材51に接合していてもよい。充填材53は絶縁性および透光性を有している。例えば、励起光についての充填材53の透過率は70%以上であってもよく、80%以上であってもよく、90%以上であってもよく、95%以上であってもよい。照明光についての充填材53の透過率(最大値)は例えば、70%以上であってもよく、80%以上であってもよく、90%以上であってもよく、95%以上であってもよい。充填材53は固体であってもよく、液体であってもよい。具体的な一例として充填材53は例えばエポキシ樹脂またはシリコーン樹脂などの樹脂であってもよい。充填材53の一部が波長変換部材4と基板部2との間において第1樹脂部材51の外側に位置していてもよい。充填材53は外部の水分などの因子から発光素子3を保護することができる。
<Filling material>
As shown in FIG. 1 , a filler 53 may be located in the region surrounded by the first resin member 51. The filler 53 may tightly cover the light-emitting element 3. In other words, the filler 53 may seal the light-emitting element 3. The filler 53 may be bonded to the wavelength conversion member 4 or the first resin member 51. The filler 53 has insulating properties and light-transmitting properties. For example, the transmittance of the filler 53 for excitation light may be 70% or more, 80% or more, 90% or more, or 95% or more. The transmittance (maximum value) of the filler 53 for illumination light may be 70% or more, 80% or more, 90% or more, or 95% or more. The filler 53 may be solid or liquid. As a specific example, the filler 53 may be a resin such as an epoxy resin or a silicone resin. A portion of the filler 53 may be located outside the first resin member 51 between the wavelength conversion member 4 and the substrate unit 2. The filler 53 can protect the light emitting element 3 from external factors such as moisture.

 充填材53は次のようにして形成され得る。すなわち、固化前の充填材53を第1樹脂部材51よりも内側に塗布し、固化前の充填材53を、硬化剤、熱または光などによって固化させることにより、充填材53が形成され得る。固化前の充填材53の粘度は固化前の第1樹脂部材51の粘度よりも低くてもよい。これによれば、固化前の充填材53の流動性が高いので、固化前の充填材53が第1樹脂部材51よりも内側の空間に充填されやすい。 The filler 53 can be formed as follows. That is, the filler 53 can be formed by applying the filler 53 before solidification to an area inside the first resin member 51 and then solidifying the filler 53 before solidification using a curing agent, heat, light, or the like. The viscosity of the filler 53 before solidification may be lower than the viscosity of the first resin member 51 before solidification. In this way, the fluidity of the filler 53 before solidification is high, and the filler 53 before solidification can easily fill the space inside the first resin member 51.

 このような発光装置1において、発光素子3は励起光を発する。具体的には、発光素子3からの励起光の一部は充填材53を透過して波長変換部材4に入射する。発光素子3は励起光の出射とともに発熱する。発光素子3で発した熱は主として絶縁膜22を通じて基板21に移動し、外部に放出される。 In this light-emitting device 1, the light-emitting element 3 emits excitation light. Specifically, a portion of the excitation light from the light-emitting element 3 passes through the filler 53 and enters the wavelength conversion member 4. The light-emitting element 3 generates heat as it emits the excitation light. The heat generated by the light-emitting element 3 mainly travels through the insulating film 22 to the substrate 21 and is released to the outside.

 波長変換部材4は励起光に基づいて照明光を発する。波長変換部材4はこの照明光の出射とともに発熱する。波長変換部材4で発した熱は主として第1放熱部材6を通じて基板21または外部に移動する。第1放熱部材6の熱伝導率は波長変換部材4の熱伝導率よりも高いので、効果的に波長変換部材4を放熱させることができる。このため、波長変換部材4の熱劣化の程度を低減させることができる。言い換えれば、発光装置1はより長い期間にわたって高い輝度の照明光を出射し続けることができる。 The wavelength conversion member 4 emits illumination light based on the excitation light. The wavelength conversion member 4 generates heat as it emits this illumination light. The heat generated by the wavelength conversion member 4 is transferred mainly to the substrate 21 or to the outside via the first heat dissipation member 6. Because the thermal conductivity of the first heat dissipation member 6 is higher than that of the wavelength conversion member 4, it can effectively dissipate heat from the wavelength conversion member 4. This reduces the degree of thermal deterioration of the wavelength conversion member 4. In other words, the light emitting device 1 can continue to emit illumination light with high brightness for a longer period of time.

 第1樹脂部材51が励起光についての反射性を有している場合、発光素子3から第1樹脂部材51に向かう励起光は第1樹脂部材51で反射し、当該励起光の一部が波長変換部材4に入射し得る。発光素子3から素子電極72aに向かう励起光は素子電極72aで反射し、その結果、当該励起光の一部は波長変換部材4に入射する。発光素子3の側面からの励起光は反射材8によって反射し、他の部材で反射しつつ、波長変換部材4に入射し得る。 If the first resin member 51 is reflective to excitation light, excitation light traveling from the light-emitting element 3 toward the first resin member 51 is reflected by the first resin member 51, and some of the excitation light may enter the wavelength conversion member 4. Excitation light traveling from the light-emitting element 3 toward the element electrode 72a is reflected by the element electrode 72a, and as a result, some of the excitation light enters the wavelength conversion member 4. Excitation light from the side of the light-emitting element 3 is reflected by the reflector 8, and may enter the wavelength conversion member 4 while being reflected by other members.

 第1樹脂部材51は発光素子3を囲んでいるので、励起光は波長変換部材4のうちの第1樹脂部材51で囲まれた入射領域に入射する。つまり、波長変換部材4のうちの入射領域に集中して励起光が入射する。このため、波長変換部材4はより小さい出射径でより高輝度な照明光を出射することができる。その一方で、波長変換部材4には輝度の高い励起光が入射するので、波長変換部材4の熱劣化の程度がおおきくなってしまう。本実施形態では、第1樹脂部材51の外側に位置する第1放熱部材6が波長変換部材4の熱を効果的に逃がすことができる。このため、発光装置1は高い信頼性で高輝度の照明光を出射することができる。 Because the first resin member 51 surrounds the light-emitting element 3, the excitation light is incident on the wavelength conversion member 4 in an incident region surrounded by the first resin member 51. In other words, the excitation light is concentrated on the incident region of the wavelength conversion member 4. This allows the wavelength conversion member 4 to emit brighter illumination light with a smaller exit diameter. However, since brighter excitation light is incident on the wavelength conversion member 4, the degree of thermal degradation of the wavelength conversion member 4 increases. In this embodiment, the first heat dissipation member 6, which is located outside the first resin member 51, can effectively dissipate heat from the wavelength conversion member 4. This allows the light-emitting device 1 to emit brighter illumination light with high reliability.

 第1放熱部材6の材料として金属を採用すると、熱伝導率が高いので、発光装置1の放熱性をさらに向上させることができる。しかも、図2に示されるように、第1放熱部材6が平面視において導電パターン7と重ならない領域に位置すれば、導電性を有する第1放熱部材6と導電パターン7との絶縁性をより確実に確保することができる。 If metal is used as the material for the first heat dissipation member 6, its high thermal conductivity will further improve the heat dissipation performance of the light emitting device 1. Furthermore, as shown in Figure 2, if the first heat dissipation member 6 is positioned in an area that does not overlap with the conductive pattern 7 in a planar view, insulation between the conductive first heat dissipation member 6 and the conductive pattern 7 can be more reliably ensured.

 ここで、第1樹脂部材51が設けられてない構造について考察する。該構造では、発光素子3からの励起光の一部は第1放熱部材6の側面で反射して波長変換部材4に入射し得る。このため、波長変換部材4のうち第1放熱部材6の側面近傍の領域にも励起光が入射し得る。つまり、波長変換部材4の入射領域が広くなり、その結果、照明光の出射径が大きくなってしまうとともに、照明光の輝度も低下してしまう。 Now, let us consider a structure in which the first resin member 51 is not provided. In this structure, some of the excitation light from the light-emitting element 3 may be reflected by the side surface of the first heat dissipation member 6 and enter the wavelength conversion member 4. As a result, the excitation light may also enter the area of the wavelength conversion member 4 near the side surface of the first heat dissipation member 6. In other words, the incident area of the wavelength conversion member 4 becomes wider, which results in an increase in the emission diameter of the illumination light and a decrease in the brightness of the illumination light.

 これに対して、本実施形態では、第1樹脂部材51が、平面視において第1放熱部材6よりも発光素子3に近い位置で、発光素子3を囲んでいる。発光素子3に近い位置では、素子電極71aおよび素子電極72aも近いものの、絶縁性の第1樹脂部材51が素子電極71aおよび素子電極72aに近くても、放電などの電気的な問題を招かない。例えば、第1樹脂部材51を素子電極71aの直上に配置することができる。しかも、第1樹脂部材51が反射性を有する場合、第1樹脂部材51によって波長変換部材4の入射領域を狭くすることができるので、照明光の出射径を小さくしつつ、照明光の輝度を高めることができる。 In contrast, in this embodiment, the first resin member 51 surrounds the light-emitting element 3 at a position closer to the light-emitting element 3 than the first heat dissipation member 6 in a planar view. Although the element electrodes 71a and 72a are also close to the light-emitting element 3 at a position closer to the light-emitting element 3, the proximity of the insulating first resin member 51 to the element electrodes 71a and 72a does not lead to electrical problems such as discharge. For example, the first resin member 51 can be positioned directly above the element electrode 71a. Furthermore, if the first resin member 51 is reflective, the first resin member 51 can narrow the incident area of the wavelength conversion member 4, thereby increasing the brightness of the illumination light while reducing the emission diameter of the illumination light.

 <第2実施形態>
 図3は、第2実施形態に係る発光装置1の構成の一部の一例を概略的に示す断面図である。図4は、第2実施形態に係る発光装置1の構成の一部の一例を概略的に示す平面図である。第2実施形態に係る発光装置1は、波長変換部材4のサイズおよび間接部材5の有無という点で、第1実施形態に係る発光装置1と相違する。
Second Embodiment
Fig. 3 is a cross-sectional view schematically showing an example of a part of the configuration of the light emitting device 1 according to the second embodiment. Fig. 4 is a plan view schematically showing an example of a part of the configuration of the light emitting device 1 according to the second embodiment. The light emitting device 1 according to the second embodiment differs from the light emitting device 1 according to the first embodiment in the size of the wavelength conversion member 4 and the presence or absence of the intermediate member 5.

 第2実施形態では、間接部材5は波長変換部材4と第1樹脂部材51との間に位置している。間接部材5は波長変換部材4と第1放熱部材6との間に位置しているともいえる。間接部材5は板状形状を有していてもよい。間接部材5は、厚さ方向において対向する第1面5aおよび第2面5bを有している。図4に示されるように、間接部材5は平面視において矩形形状を有していてもよい。一例として、間接部材5は正方形形状を有していてもよい。間接部材5の一辺は基板21の一辺と平行であってもよい。 In the second embodiment, the indirect member 5 is located between the wavelength conversion member 4 and the first resin member 51. It can also be said that the indirect member 5 is located between the wavelength conversion member 4 and the first heat dissipation member 6. The indirect member 5 may have a plate-like shape. The indirect member 5 has a first surface 5a and a second surface 5b that face each other in the thickness direction. As shown in FIG. 4, the indirect member 5 may have a rectangular shape in a planar view. As an example, the indirect member 5 may have a square shape. One side of the indirect member 5 may be parallel to one side of the substrate 21.

 図3を参照して、第1樹脂部材51および充填材53の少なくともいずれか一方は間接部材5の第2面5bに接し得る。第1樹脂部材51および充填材53の少なくともいずれか一方は間接部材5の第2面5bに接合していてもよい。間接部材5の下面の周縁部は第1放熱部材6の上面の一部と厚さ方向において対向している。間接部材5の当該周縁部は第1放熱部材6の当該一部に接していてもよく、間接部材5と第1放熱部材6との間に放熱グリスなどの高熱伝導性樹脂が位置していてもよい。ここで、間接部材5の周縁部とは、間接部材5の外周の縁から1mm以内の領域を含んでもよい。 Referring to FIG. 3, at least one of the first resin member 51 and the filler 53 may be in contact with the second surface 5b of the intermediate member 5. At least one of the first resin member 51 and the filler 53 may be bonded to the second surface 5b of the intermediate member 5. The peripheral edge of the lower surface of the intermediate member 5 faces a part of the upper surface of the first heat dissipation member 6 in the thickness direction. This peripheral edge of the intermediate member 5 may be in contact with this part of the first heat dissipation member 6, and a highly thermally conductive resin such as thermal grease may be located between the intermediate member 5 and the first heat dissipation member 6. Here, the peripheral edge of the intermediate member 5 may include an area within 1 mm from the outer periphery of the intermediate member 5.

 間接部材5は励起光についての透光性を有している。励起光についての間接部材5の透過率は例えば80%以上であってもよく、90%以上であってもよく、95%以上であってもよく、98%以上であってもよい。間接部材5は照明光についての透光性を有していてもよい。照明光についての間接部材5の透過率は例えば80%以上であってもよく、90%以上であってもよく、95%以上であってもよく、98%以上であってもよい。間接部材5は例えばサファイアなどの透明セラミック、ガラスまたは結晶化ガラスによって形成される。 The indirect member 5 is translucent to the excitation light. The transmittance of the indirect member 5 to the excitation light may be, for example, 80% or more, 90% or more, 95% or more, or 98% or more. The indirect member 5 may be translucent to the illumination light. The transmittance of the indirect member 5 to the illumination light may be, for example, 80% or more, 90% or more, 95% or more, or 98% or more. The indirect member 5 is formed, for example, from a transparent ceramic such as sapphire, glass, or crystallized glass.

 間接部材5の熱伝導率は空気の熱伝導率よりも高く、波長変換部材4の熱伝導率よりも高くてもよい。間接部材5がサファイアである場合、間接部材5の熱伝導率は波長変換部材4の熱伝導率よりも十分に高い。間接部材5の熱伝導率は第1放熱部材6の熱伝導率よりも小さくてもよい。 The thermal conductivity of the indirect member 5 is higher than that of air and may be higher than that of the wavelength conversion member 4. If the indirect member 5 is sapphire, the thermal conductivity of the indirect member 5 is sufficiently higher than that of the wavelength conversion member 4. The thermal conductivity of the indirect member 5 may be lower than that of the first heat dissipation member 6.

 波長変換部材4で生じた熱は熱伝導率の高い間接部材5を経由して、熱伝導率の高い第1放熱部材6に伝達される。このため、波長変換部材4の温度をさらに低減させることができる。 The heat generated in the wavelength conversion member 4 is transferred via the intermediate member 5, which has high thermal conductivity, to the first heat dissipation member 6, which also has high thermal conductivity. This allows the temperature of the wavelength conversion member 4 to be further reduced.

 波長変換部材4は間接部材5の第1面5a上に位置している。図4に示されるように、波長変換部材4は平面視において円形状を有していてもよい。波長変換部材4の直径は間接部材5の一辺よりも短い。平面視において、波長変換部材4の周縁は第1樹脂部材51の内周縁よりも外側に位置してもよい。つまり、波長変換部材4の直径は第1樹脂部材51の内径よりも大きくてもよい。これによれば、励起光はより適切に波長変換部材4に入射する。逆に言えば、波長変換部材4に入射しない励起光の量を低減させることができる。 The wavelength conversion member 4 is located on the first surface 5a of the intermediate member 5. As shown in FIG. 4, the wavelength conversion member 4 may have a circular shape in a planar view. The diameter of the wavelength conversion member 4 is shorter than one side of the intermediate member 5. In a planar view, the periphery of the wavelength conversion member 4 may be located outside the inner periphery of the first resin member 51. In other words, the diameter of the wavelength conversion member 4 may be larger than the inner diameter of the first resin member 51. This allows the excitation light to more appropriately enter the wavelength conversion member 4. Conversely, the amount of excitation light that does not enter the wavelength conversion member 4 can be reduced.

 平面視において、波長変換部材4の周縁は第1樹脂部材51の外周縁よりも内側に位置してもよい。つまり、波長変換部材4の直径は第1樹脂部材51の外径よりも小さくてもよい。この場合、波長変換部材4のサイズを低減させることができ、発光装置1を小型化できるとともに、発光装置1のコストを低減させることができる。 In plan view, the periphery of the wavelength conversion member 4 may be located inside the outer periphery of the first resin member 51. In other words, the diameter of the wavelength conversion member 4 may be smaller than the outer diameter of the first resin member 51. In this case, the size of the wavelength conversion member 4 can be reduced, which allows the light emitting device 1 to be made more compact and the cost of the light emitting device 1 to be reduced.

 波長変換部材4は、複数種類の蛍光体粒子41およびバインダー層42を含んでいてもよい。これにより、波長変換部材4の波長変換性能(つまり、発光効率)を向上させることができる。一方で、波長変換部材4単独の破壊強度はあまり高くない。このため、波長変換部材4が間接部材5に固定されていてもよい。例えば、波長変換部材4のバインダー層42が間接部材5の第1面5aに接合していてもよい。また、間接部材5の破壊強度は波長変換部材4の破壊強度よりも高くてもよい。例えば、間接部材5がサファイアである場合、間接部材5の破壊強度は波長変換部材4の破壊強度よりも十分に高い。破壊強度は、具体的には例えばJIS R1601に一部準拠又はISO23242に準拠する方法で曲げ強度として評価可能である。例えば間接部材5がサファイアである場合、曲げ強度は960MPaに達し得る。一方、波長変換部材4の曲げ強度は50MPaに達し得る。したがって、第1実施形態に比べて、発光装置1の信頼性を向上させることができる。 The wavelength conversion member 4 may contain multiple types of phosphor particles 41 and a binder layer 42. This can improve the wavelength conversion performance (i.e., luminous efficiency) of the wavelength conversion member 4. However, the breaking strength of the wavelength conversion member 4 alone is not very high. For this reason, the wavelength conversion member 4 may be fixed to the intermediate member 5. For example, the binder layer 42 of the wavelength conversion member 4 may be bonded to the first surface 5a of the intermediate member 5. Furthermore, the breaking strength of the intermediate member 5 may be higher than that of the wavelength conversion member 4. For example, if the intermediate member 5 is sapphire, the breaking strength of the intermediate member 5 is sufficiently higher than that of the wavelength conversion member 4. Specifically, the breaking strength can be evaluated as bending strength using a method that partially complies with JIS R1601 or ISO 23242. For example, if the intermediate member 5 is sapphire, the bending strength can reach 960 MPa. On the other hand, the bending strength of the wavelength conversion member 4 can reach 50 MPa. Therefore, the reliability of the light emitting device 1 can be improved compared to the first embodiment.

 <第3実施形態>
 図5は、第3実施形態に係る照明装置10の構成の一例を概略的に示す分解斜視図である。照明装置10は、発光装置1と、第2放熱部材91と、ヒートシンク92と、筒状体93とを含んでいる。
Third Embodiment
5 is an exploded perspective view schematically illustrating an example of the configuration of an illumination device 10 according to the third embodiment. The illumination device 10 includes a light-emitting device 1, a second heat dissipation member 91, a heat sink 92, and a cylindrical body 93.

 ヒートシンク92は、基板21の第2面21bよりも広い第1面92aを有している。ヒートシンク92の第1面92aは基板21の第2面21bに接していてもよいし、ヒートシンク92と基板21との間に、放熱グリスなどの高熱伝導性樹脂が位置していてもよい。ヒートシンク92の熱伝導率は波長変換部材4の熱伝導率よりも高い。ヒートシンク92は例えば銅またはアルミニウムなどの金属によって形成される。 The heat sink 92 has a first surface 92a that is larger than the second surface 21b of the substrate 21. The first surface 92a of the heat sink 92 may be in contact with the second surface 21b of the substrate 21, or a highly thermally conductive resin such as thermal grease may be positioned between the heat sink 92 and the substrate 21. The thermal conductivity of the heat sink 92 is higher than that of the wavelength conversion member 4. The heat sink 92 is formed from a metal such as copper or aluminum.

 ヒートシンク92は、板部921と、複数のフィン922とを含んでいてもよい。板部921は第1面92aを有している。板部921のうち第1面92aとは逆側の第2面92bには、複数のフィン922が設けられている。第2面92bは、板部921の厚さ方向において第1面92aと対向する面である。複数のフィン922は板部921の第2面92bから突出している。これにより、ヒートシンク92の放熱性を向上させることができる。 The heat sink 92 may include a plate portion 921 and a plurality of fins 922. The plate portion 921 has a first surface 92a. A plurality of fins 922 are provided on a second surface 92b of the plate portion 921, which is opposite the first surface 92a. The second surface 92b is the surface that faces the first surface 92a in the thickness direction of the plate portion 921. The multiple fins 922 protrude from the second surface 92b of the plate portion 921. This can improve the heat dissipation properties of the heat sink 92.

 第2放熱部材91は発光装置1の第1放熱部材6と接している。第2放熱部材91は板状形状を有していてもよい。第2放熱部材91の中央部には開口91aが形成されている。開口91aは、第2放熱部材91をその厚さ方向に貫通する。開口91aは平面視において円形状を有していてもよい。第2放熱部材91は、平面視において開口91a内に発光素子3および波長変換部材4が位置するように、発光装置1に取り付けられている。平面視において、第2放熱部材91の開口91aは第1樹脂部材51の外周縁よりも大きくてもよい。言い換えれば、第2放熱部材91の開口91aの直径は第1樹脂部材51の外径よりも大きくてもよい。平面視において、開口91aは波長変換部材4よりも大きくてもよい。波長変換部材4からの照明光は第2放熱部材91の開口91aを通過する。 The second heat dissipation member 91 is in contact with the first heat dissipation member 6 of the light-emitting device 1. The second heat dissipation member 91 may have a plate-like shape. An opening 91a is formed in the center of the second heat dissipation member 91. The opening 91a penetrates the second heat dissipation member 91 in its thickness direction. The opening 91a may have a circular shape in a planar view. The second heat dissipation member 91 is attached to the light-emitting device 1 so that the light-emitting element 3 and the wavelength conversion member 4 are located within the opening 91a in a planar view. In a planar view, the opening 91a of the second heat dissipation member 91 may be larger than the outer periphery of the first resin member 51. In other words, the diameter of the opening 91a of the second heat dissipation member 91 may be larger than the outer diameter of the first resin member 51. In a planar view, the opening 91a may be larger than the wavelength conversion member 4. Illumination light from the wavelength conversion member 4 passes through the opening 91a of the second heat dissipation member 91.

 第2放熱部材91は第1放熱部材6の第1面6aおよび側面に部分的に接していてもよいし、第2放熱部材91と第1放熱部材6との間に、放熱グリスなどの高熱伝導性樹脂が位置していてもよい。 The second heat dissipation member 91 may be in partial contact with the first surface 6a and side surfaces of the first heat dissipation member 6, or a highly thermally conductive resin such as thermal grease may be positioned between the second heat dissipation member 91 and the first heat dissipation member 6.

 発光装置1が間接部材5を含んでいる場合、第2放熱部材91は、間接部材5の第1面5aおよび側面5cに部分的に接していてもよい。第2放熱部材91と間接部材5との間に、放熱グリスなどの高熱伝導性樹脂が位置していてもよい。 If the light emitting device 1 includes an intermediate member 5, the second heat dissipation member 91 may be in partial contact with the first surface 5a and the side surface 5c of the intermediate member 5. A highly thermally conductive resin such as thermal grease may be located between the second heat dissipation member 91 and the intermediate member 5.

 第2放熱部材91は基板21よりも外側に張り出していてもよい。第2放熱部材91のうちの基板21よりも外側に張り出した部分は、ヒートシンク92の第1面92aに接していてもよい。あるいは、第2放熱部材91とヒートシンク92との間には、放熱グリスなどの高熱伝導性樹脂が位置していてもよい。 The second heat dissipation member 91 may protrude outward beyond the substrate 21. The portion of the second heat dissipation member 91 that protrudes outward beyond the substrate 21 may be in contact with the first surface 92a of the heat sink 92. Alternatively, a highly thermally conductive resin such as thermal grease may be positioned between the second heat dissipation member 91 and the heat sink 92.

 図5に示されるように、第2放熱部材91の外周縁は部分的に円に沿っていてもよく、基板21の角部に相当する位置で切り欠き91bが形成されていてもよい。つまり、第2放熱部材91は平面視において花びら状形状を有していてもよい。このような複雑な形状を有する第2放熱部材91は、例えば、所定の金型を用いて製造され得る。第2放熱部材91はスリーブとも呼ばれ得る。外部電極71bおよび外部電極72bは、それぞれ対応する切り欠き91bにおいて、第2放熱部材91から露出している。外部電極71bには配線85が接続されており、外部電極72bには配線86が接続されている。 As shown in FIG. 5, the outer periphery of the second heat dissipation member 91 may be partially circular, and notches 91b may be formed at positions corresponding to the corners of the substrate 21. In other words, the second heat dissipation member 91 may have a petal-like shape in a plan view. A second heat dissipation member 91 having such a complex shape may be manufactured using, for example, a predetermined mold. The second heat dissipation member 91 may also be called a sleeve. The external electrode 71b and the external electrode 72b are exposed from the second heat dissipation member 91 at the corresponding notches 91b. Wiring 85 is connected to the external electrode 71b, and wiring 86 is connected to the external electrode 72b.

 第2放熱部材91の熱伝導率は空気の熱伝導率よりも高い。第2放熱部材91の熱伝導率は波長変換部材4の熱伝導率より高くてもよい。第2放熱部材91は、例えば、アルミニウムなどの金属によって形成されていてもよく、アルミナなどのセラミックによって形成されてもよく、樹脂またはゴムによって形成されてもよい。樹脂またはゴムは、高熱伝導フィラーを含んでいてもよい。高熱伝導フィラーは、波長変換部材4よりも熱伝導率が高い銀、アルミニウム、酸化アルミニウムおよびグラフェンの少なくともいずれか一つを含んでもよい。 The thermal conductivity of the second heat dissipation member 91 is higher than that of air. The thermal conductivity of the second heat dissipation member 91 may be higher than that of the wavelength conversion member 4. The second heat dissipation member 91 may be made of, for example, a metal such as aluminum, a ceramic such as alumina, or a resin or rubber. The resin or rubber may contain a highly thermally conductive filler. The highly thermally conductive filler may contain at least one of silver, aluminum, aluminum oxide, and graphene, which have a higher thermal conductivity than the wavelength conversion member 4.

 図5に示されるように、筒状体93は第1円弧部931および第2円弧部932を含んでいてもよい。第1円弧部931および第2円弧部932は筒状体93を周方向に2分割して得られた形状を有する。第1円弧部931および第2円弧部932が周方向で結合されることにより、筒状体93が構成される。図5では、第1円弧部931および第2円弧部932を互いに分離して示している。第1円弧部931および第2円弧部932には、互いに結合するための係止部などの固定部材が取り付けられ得る。 As shown in FIG. 5, the cylindrical body 93 may include a first arc portion 931 and a second arc portion 932. The first arc portion 931 and the second arc portion 932 have shapes obtained by dividing the cylindrical body 93 into two in the circumferential direction. The first arc portion 931 and the second arc portion 932 are joined in the circumferential direction to form the cylindrical body 93. In FIG. 5, the first arc portion 931 and the second arc portion 932 are shown separated from each other. A fixing member such as a locking portion for joining the first arc portion 931 and the second arc portion 932 to each other may be attached to the first arc portion 931 and the second arc portion 932.

 筒状体93はヒートシンク92に固定される。筒状体93の一方の周縁端はヒートシンク92の第1面92aに接続されている。筒状体93は発光装置1を収納している。筒状体93の内周面は第2放熱部材91の外周面に接している。筒状体93は円筒形状を有していてもよい。筒状体93の内周面は第2放熱部材91の外周面を押圧し得る。これにより、筒状体93と第2放熱部材91との密着性を向上させることができる。密着性が高いほど、熱は第2放熱部材91から筒状体93へ伝達しやすくなる。 The cylindrical body 93 is fixed to the heat sink 92. One peripheral end of the cylindrical body 93 is connected to the first surface 92a of the heat sink 92. The cylindrical body 93 houses the light-emitting device 1. The inner peripheral surface of the cylindrical body 93 is in contact with the outer peripheral surface of the second heat dissipation member 91. The cylindrical body 93 may have a cylindrical shape. The inner peripheral surface of the cylindrical body 93 can press against the outer peripheral surface of the second heat dissipation member 91. This improves the adhesion between the cylindrical body 93 and the second heat dissipation member 91. The higher the adhesion, the easier it is for heat to be transferred from the second heat dissipation member 91 to the cylindrical body 93.

 筒状体93の熱伝導率は空気の熱伝導率よりも高く、波長変換部材4の熱伝導率より高くてもよい。筒状体93は例えばアルミニウムなどの金属によって形成されてもよい。 The thermal conductivity of the cylindrical body 93 may be higher than that of air and higher than that of the wavelength conversion member 4. The cylindrical body 93 may be made of a metal such as aluminum.

 図5に示されるように、第2放熱部材91は4つの切り欠き91bを有してもよい。4つの切り欠き91bは周方向で等間隔となる位置に形成されており、それぞれ基板21の4つの角部を露出させている。対角に位置する2つの切り欠き91bは、外部電極71bおよび外部電極72bを露出させており、配線85および配線86がそれぞれ外部電極71bおよび外部電極72bに接続されている。残りの2つの切り欠き91bは必ずしも必要ではないものの、以下に説明する技術的意義を招来し得る。 As shown in FIG. 5, the second heat dissipation member 91 may have four notches 91b. The four notches 91b are formed at equally spaced positions in the circumferential direction, exposing four corners of the substrate 21, respectively. Two diagonally positioned notches 91b expose the external electrodes 71b and 72b, and wiring 85 and wiring 86 are connected to the external electrodes 71b and 72b, respectively. The remaining two notches 91b are not necessarily required, but may provide the technical significance described below.

 隣り合う2つの切り欠き91bによって囲まれた部分91cは、平面視において、発光素子3とは逆側(つまり外側)に突出している。より多くの切り欠き91bが設けられているので、部分91cの幅は比較的に狭い。このように幅の狭い部分91cが筒状体93によって内側に押圧されると、部分91cは次のように変形しやすい。すなわち、部分91cの周方向の幅が広がると共に径方向の幅が狭くなる。このような変形を伴って部分91cが筒状体93の内周面に押圧されると、部分91cの外周面と筒状体93の内周面との密着性が高くなる。特に、第2放熱部材91が樹脂またはゴムなどの弾性材料で形成されている場合には、上述の弾性変形が容易である。密着性の向上という点では、3つ以上の切り欠き91bが形成されていればよく、5つ以上の切り欠き91bが形成されてもよい。 In plan view, the portion 91c surrounded by two adjacent notches 91b protrudes toward the opposite side (i.e., outward) from the light-emitting element 3. Because many notches 91b are provided, the width of the portion 91c is relatively narrow. When this narrow portion 91c is pressed inward by the cylindrical body 93, the portion 91c is prone to deformation as follows: That is, the circumferential width of the portion 91c increases and the radial width decreases. When the portion 91c is pressed against the inner peripheral surface of the cylindrical body 93 with this deformation, the adhesion between the outer peripheral surface of the portion 91c and the inner peripheral surface of the cylindrical body 93 increases. The above-described elastic deformation is particularly easy when the second heat dissipation member 91 is made of an elastic material such as resin or rubber. To improve adhesion, it is sufficient to form three or more notches 91b, and five or more notches 91b may also be formed.

 筒状体93は、配線85を引き出すための引き出し口93aと、配線86を引き出すための引き出し口93bとを有している。 The cylindrical body 93 has a lead-out opening 93a for leading out the wiring 85 and a lead-out opening 93b for leading out the wiring 86.

 筒状体93の内部には、レンズなどの光学系(不図示)が位置していてもよい。光学系は基板21の厚さ方向において、発光装置1と並ぶ位置に配置され得る。波長変換部材4からの照明光は光学系を通じて外部に出射され得る。筒状体93は鏡筒とも呼ばれ得る。 An optical system (not shown), such as a lens, may be located inside the cylindrical body 93. The optical system may be positioned alongside the light-emitting device 1 in the thickness direction of the substrate 21. Illumination light from the wavelength conversion member 4 may be emitted to the outside through the optical system. The cylindrical body 93 may also be called a lens barrel.

 第3実施形態では、波長変換部材4で発した熱は、第1放熱部材6および第2放熱部材91をこの順に経由した後、ヒートシンク92および筒状体93に伝達される。これにより、発光装置1の放熱性をさらに向上させることができる。上述の例では、第2放熱部材91は第1放熱部材6の第1面6aおよび側面に接している。このため、第2放熱部材91はより広い面積で第1放熱部材6と接することができ、第1放熱部材6からの熱をより広い面積で受け取ることができる。したがって、発光装置1の放熱性をさらに向上させることができる。 In the third embodiment, the heat generated by the wavelength conversion member 4 passes through the first heat dissipation member 6 and the second heat dissipation member 91 in this order, and is then transferred to the heat sink 92 and the cylindrical body 93. This further improves the heat dissipation performance of the light emitting device 1. In the example described above, the second heat dissipation member 91 contacts the first surface 6a and the side surface of the first heat dissipation member 6. This allows the second heat dissipation member 91 to contact the first heat dissipation member 6 over a wider area, and to receive heat from the first heat dissipation member 6 over a wider area. This therefore further improves the heat dissipation performance of the light emitting device 1.

 上述の例では、筒状体93は円筒形状を有しているものの、必ずしもこれに限らない。筒状体93は多角筒形状を有していてもよい。この場合、第2放熱部材91の外周面は筒状体93の内周面に部分的に沿う多角形状を有していてもよい。 In the above example, the tubular body 93 has a cylindrical shape, but this is not necessarily limited to this. The tubular body 93 may also have a polygonal tubular shape. In this case, the outer peripheral surface of the second heat dissipation member 91 may have a polygonal shape that partially follows the inner peripheral surface of the tubular body 93.

 <第4実施形態>
 図6は、第4実施形態に係る発光装置1の構成の一部の一例を概略的に示す断面図である。第4実施形態に係る発光装置1は、第2樹脂部材52の有無という点で、第1実施形態または第2実施形態に係る発光装置1と相違する。第2樹脂部材52は第1樹脂部材51と第1放熱部材6との間に位置している。第2樹脂部材52の熱伝導率は空気の熱伝導率よりも高い。第2樹脂部材52の熱伝導率は第1樹脂部材51の熱伝導率より高くてもよく、波長変換部材4の熱伝導率より高くてもよい。第2樹脂部材52の熱伝導率は第1放熱部材6の熱伝導率より低くてもよい。
Fourth Embodiment
6 is a cross-sectional view schematically illustrating an example of a portion of the configuration of a light emitting device 1 according to the fourth embodiment. The light emitting device 1 according to the fourth embodiment differs from the light emitting device 1 according to the first or second embodiment in the presence or absence of a second resin member 52. The second resin member 52 is located between the first resin member 51 and the first heat dissipation member 6. The thermal conductivity of the second resin member 52 is higher than that of air. The thermal conductivity of the second resin member 52 may be higher than that of the first resin member 51 or may be higher than that of the wavelength conversion member 4. The thermal conductivity of the second resin member 52 may be lower than that of the first heat dissipation member 6.

 第2樹脂部材52は、高熱伝導フィラーを含んだ樹脂であってもよい。高熱伝導フィラーは、波長変換部材4よりも熱伝導率が高い銀、アルミニウム、酸化アルミニウムおよびグラフェンの少なくともいずれか一つを含む。樹脂には、例えば、エポキシ樹脂またはシリコーン樹脂などが採用され得る。 The second resin member 52 may be a resin containing a highly thermally conductive filler. The highly thermally conductive filler contains at least one of silver, aluminum, aluminum oxide, and graphene, which have a higher thermal conductivity than the wavelength conversion member 4. The resin may be, for example, an epoxy resin or a silicone resin.

 図6に示されるように、第2樹脂部材52は、間接部材5、第1放熱部材6および反射材8に接していてもよい。間接部材5が配置されていない場合には、第2樹脂部材52は波長変換部材4に接していてもよい。図2を参照して、第2樹脂部材52は少なくとも凹部6cにおいて、第1樹脂部材51と第1放熱部材6との間を充填していてもよい。これにより、波長変換部材4で発した熱は間接部材5および第2樹脂部材52を通じて第1放熱部材6に効果的に伝達させることができる。 As shown in FIG. 6, the second resin member 52 may be in contact with the intermediate member 5, the first heat dissipation member 6, and the reflector 8. If the intermediate member 5 is not provided, the second resin member 52 may be in contact with the wavelength conversion member 4. Referring to FIG. 2, the second resin member 52 may fill the space between the first resin member 51 and the first heat dissipation member 6 at least in the recess 6c. This allows the heat generated by the wavelength conversion member 4 to be effectively transferred to the first heat dissipation member 6 via the intermediate member 5 and the second resin member 52.

 第2樹脂部材52が第1樹脂部材51に接していれば、第2樹脂部材52は間接部材5のより広い領域に接しやすい。これによれば、間接部材5からの熱をより効果的に第1放熱部材6に伝達させることができる。一方、第2樹脂部材52が反射材8に接していれば、第2樹脂部材52は第1放熱部材6の側面の全体に接しやすい。これによっても、波長変換部材4からの熱をより効果的に第1放熱部材6に伝達させることができる。 If the second resin member 52 is in contact with the first resin member 51, the second resin member 52 is likely to come into contact with a wider area of the intermediate member 5. This allows heat from the intermediate member 5 to be transferred more effectively to the first heat dissipation member 6. On the other hand, if the second resin member 52 is in contact with the reflector 8, the second resin member 52 is likely to come into contact with the entire side surface of the first heat dissipation member 6. This also allows heat from the wavelength conversion member 4 to be transferred more effectively to the first heat dissipation member 6.

 第2樹脂部材52は間接部材5、第1樹脂部材51、第1放熱部材6および反射材8の少なくともいずれかに接合していてもよい。第2樹脂部材52は次のようにして形成され得る。すなわち、固化前の第2樹脂部材52を第1樹脂部材51と第1放熱部材6との間に塗布し、固化前の第2樹脂部材52を、硬化剤、熱または光によって固化させることにより、第2樹脂部材52が形成され得る。固化前の第2樹脂部材52の粘度は固化前の第1樹脂部材51の粘度よりも低い。これにより、第2樹脂部材52が第1樹脂部材51と第1放熱部材6との間により容易に充填される。 The second resin member 52 may be bonded to at least one of the intermediate member 5, the first resin member 51, the first heat dissipation member 6, and the reflector 8. The second resin member 52 can be formed as follows. That is, the second resin member 52 before solidification is applied between the first resin member 51 and the first heat dissipation member 6, and the second resin member 52 before solidification is solidified using a curing agent, heat, or light, thereby forming the second resin member 52. The viscosity of the second resin member 52 before solidification is lower than the viscosity of the first resin member 51 before solidification. This makes it easier for the second resin member 52 to fill the space between the first resin member 51 and the first heat dissipation member 6.

 第2樹脂部材52は照明光についての反射性を有していてもよい。例えば、第2樹脂部材52のフィラーに銀、アルミニウムまたは酸化アルミニウムなどの反射材料が採用されてもよい。照明光についての第2樹脂部材52の反射率(最大値)は、例えば50%以上であってもよく、60%以上であってもよく、70%以上であってもよく、80%以上であってもよく、90%以上であってもよい。これによれば、波長変換部材4から第2樹脂部材52に入射する照明光を反射させることができる。図6の例では、波長変換部材4の側面から出射された照明光が間接部材5を透過して、第2樹脂部材52に入射し得る。第2樹脂部材52は当該照明光を反射する。これにより、発光装置1から出射される照明光の光量を向上させることができる。 The second resin member 52 may be reflective to the illumination light. For example, a reflective material such as silver, aluminum, or aluminum oxide may be used as the filler of the second resin member 52. The reflectance (maximum value) of the second resin member 52 to the illumination light may be, for example, 50% or more, 60% or more, 70% or more, 80% or more, or 90% or more. This allows the illumination light incident on the second resin member 52 from the wavelength conversion member 4 to be reflected. In the example of Figure 6, the illumination light emitted from the side surface of the wavelength conversion member 4 may pass through the indirect member 5 and enter the second resin member 52. The second resin member 52 reflects the illumination light. This increases the amount of illumination light emitted from the light emitting device 1.

 その一方で、第1樹脂部材51よりも外側に位置する第2樹脂部材52から照明光が照明空間に進むので、発光装置1の出射径が広がり得る。このような出射径の広がりを低減させるために、第2樹脂部材52は照明光についての吸収性を有していてもよい。第2樹脂部材52は黒色樹脂であってもよい。例えば、第2樹脂部材52のフィラーにグラフェンまたは酸化アルミニウムが採用されてもよい。照明光についての第2樹脂部材52の吸収率(最大値)は、例えば50%以上であってもよく、60%以上であってもよく、70%以上であってもよく、80%以上であってもよく、90%以上であってもよい。これによれば、第2樹脂部材52は、波長変換部材4から第2樹脂部材52に入射する照明光を効果的に吸収することができる。これにより、発光装置1の出射径を低減させることができる。 On the other hand, since the illumination light travels into the illumination space from the second resin member 52, which is positioned further outward than the first resin member 51, the emission diameter of the light-emitting device 1 may widen. To reduce this widening of the emission diameter, the second resin member 52 may be absorbing illumination light. The second resin member 52 may be a black resin. For example, graphene or aluminum oxide may be used as the filler for the second resin member 52. The absorption rate (maximum value) of the illumination light by the second resin member 52 may be, for example, 50% or more, 60% or more, 70% or more, 80% or more, or 90% or more. This allows the second resin member 52 to effectively absorb illumination light incident on the second resin member 52 from the wavelength conversion member 4. This reduces the emission diameter of the light-emitting device 1.

 <第5実施形態>
 図7は、第5実施形態に係る発光装置1の構成の一部の一例を概略的に示す断面図である。図8は、第5実施形態に係る発光装置1の構成の一部の一例を概略的に示す平面図である。第5実施形態に係る発光装置1は、電子部品35の有無という点で、第1実施形態から第4実施形態に係る発光装置1と相違する。電子部品35は、基板部2と波長変換部材4との間に位置しており、図7の例では、反射材8と間接部材5との間に位置している。また、電子部品35は平面視において第1樹脂部材51と第1放熱部材6との間に位置している。
Fifth Embodiment
Fig. 7 is a cross-sectional view schematically showing an example of a portion of the configuration of the light-emitting device 1 according to the fifth embodiment. Fig. 8 is a plan view schematically showing an example of a portion of the configuration of the light-emitting device 1 according to the fifth embodiment. The light-emitting device 1 according to the fifth embodiment differs from the light-emitting devices 1 according to the first to fourth embodiments in the presence or absence of an electronic component 35. The electronic component 35 is located between the substrate 2 and the wavelength conversion member 4, and in the example of Fig. 7, it is located between the reflector 8 and the intermediate member 5. Furthermore, the electronic component 35 is located between the first resin member 51 and the first heat dissipation member 6 in a plan view.

 電子部品35は導電パターン7に接続され得る。図8に示されるように、電子部品35の第1端は素子電極71aに接続されてもよく、電子部品35の第2端は配線72cに接続されてもよい。この場合、電子部品35は発光素子3に並列に接続される。電子部品35は、例えば、発光素子3を保護する保護素子であってもよい。具体的な一例として、電子部品35はツェナーダイオードであってもよい。この場合、電子部品35は発光素子3を過電圧または逆電圧から保護することができる。 The electronic component 35 may be connected to the conductive pattern 7. As shown in FIG. 8, a first end of the electronic component 35 may be connected to the element electrode 71a, and a second end of the electronic component 35 may be connected to the wiring 72c. In this case, the electronic component 35 is connected in parallel to the light-emitting element 3. The electronic component 35 may be, for example, a protective element that protects the light-emitting element 3. As a specific example, the electronic component 35 may be a Zener diode. In this case, the electronic component 35 can protect the light-emitting element 3 from overvoltage or reverse voltage.

 具体的な一例として、電子部品35の第1端は素子電極71aのうち円弧状の端部に接続されていてもよく、電子部品35の第2端は配線72cのうち素子電極72aの近傍に接続されていてもよい。これによれば、電子部品35を発光素子3の近くに配置することができるので、より高い精度で発光素子3を保護することができる。 As a specific example, the first end of the electronic component 35 may be connected to the arc-shaped end of the element electrode 71a, and the second end of the electronic component 35 may be connected to the wiring 72c near the element electrode 72a. This allows the electronic component 35 to be positioned close to the light-emitting element 3, thereby protecting the light-emitting element 3 with greater precision.

 あるいは、電子部品35は発光素子(第2発光素子の一例に相当)であってもよい。電子部品35は半導体発光素子であってもよく、具体的にはLED素子であってもよい。電子部品35は、発光素子3の励起光とは異なる波長の光を発してもよい。波長の一例は、後述の第6実施形態と同じであってもよい。 Alternatively, the electronic component 35 may be a light-emitting element (corresponding to an example of a second light-emitting element). The electronic component 35 may be a semiconductor light-emitting element, and more specifically, an LED element. The electronic component 35 may emit light of a wavelength different from the excitation light of the light-emitting element 3. An example of the wavelength may be the same as that of the sixth embodiment described below.

 また、第4実施形態が第5実施形態に採用されてもよい。第2樹脂部材52は電子部品35を覆って密着していてもよい。つまり、第2樹脂部材52が電子部品35を封止してもよい。この場合、電子部品35を外部の水分などの因子から保護することができる。電子部品35が発光素子である場合には、第2樹脂部材52は、電子部品35が発する光についての透光性を有する。 Furthermore, the fourth embodiment may be adopted in the fifth embodiment. The second resin member 52 may cover and adhere to the electronic component 35. In other words, the second resin member 52 may seal the electronic component 35. In this case, the electronic component 35 can be protected from external factors such as moisture. If the electronic component 35 is a light-emitting element, the second resin member 52 is translucent to the light emitted by the electronic component 35.

 <第6実施形態>
 図9は、第6実施形態に係る発光装置1の構成の一部の第1例を概略的に示す平面図である。第6実施形態に係る発光装置1は、発光素子3の個数という点で、第1実施形態から第5実施形態に係る発光装置1と相違する。第6実施形態に係る発光装置1は複数の発光素子3を含んでいる。第6実施形態では、複数の発光素子3は平面視において第1樹脂部材51によって囲まれている。つまり、複数の発光素子3は平面視において第1樹脂部材51の内周縁によって囲まれた領域内に位置している。複数の発光素子3の全てが該領域内に含まれてもよく、複数の発光素子3は当該領域からはみ出していなくてもよい。
Sixth Embodiment
9 is a plan view schematically showing a first example of a portion of the configuration of the light emitting device 1 according to the sixth embodiment. The light emitting device 1 according to the sixth embodiment differs from the light emitting devices 1 according to the first to fifth embodiments in terms of the number of light emitting elements 3. The light emitting device 1 according to the sixth embodiment includes a plurality of light emitting elements 3. In the sixth embodiment, the plurality of light emitting elements 3 are surrounded by the first resin member 51 in a planar view. In other words, the plurality of light emitting elements 3 are located within a region surrounded by the inner periphery of the first resin member 51 in a planar view. All of the plurality of light emitting elements 3 may be included within this region, and the plurality of light emitting elements 3 may not protrude from this region.

 図9に示されるように、複数の発光素子3は互いに並列に接続されてもよい。図9の例では、発光素子3として発光素子3Aから発光素子3Dが示されている。発光素子3Aから発光素子3Dは第1導電パターン71の素子電極72a上に位置している。発光素子3Aから発光素子3Dは平面視において行列状に配置されていてもよい。発光素子3Aから発光素子3Dの各々は第1実施形態から第5実施形態と同じく、第2面3bに第2素子電極を有する。発光素子3Aから発光素子3Dの各々の第2素子電極は素子電極72aと電気的に接続される。 As shown in FIG. 9, multiple light-emitting elements 3 may be connected in parallel to one another. In the example of FIG. 9, light-emitting elements 3A to 3D are shown as the light-emitting elements 3. Light-emitting elements 3A to 3D are located on element electrodes 72a of the first conductive pattern 71. Light-emitting elements 3A to 3D may be arranged in a matrix in plan view. As in the first to fifth embodiments, each of light-emitting elements 3A to 3D has a second element electrode on the second surface 3b. The second element electrode of each of light-emitting elements 3A to 3D is electrically connected to element electrode 72a.

 発光素子3Aから発光素子3Dの各々は第1実施形態から第5実施形態と同じく、第1面3aに第1素子電極を有する。発光素子3Aの第1素子電極はワイヤ31Aを介して第1導電パターン71の素子電極71aに接続され、発光素子3Bの第1素子電極はワイヤ31Bを介して素子電極71aに接続され、発光素子3Cの第1素子電極はワイヤ31Cを介して素子電極71aに接続され、発光素子3Dの第1素子電極はワイヤ31Dを介して素子電極71aに接続される。 Each of the light-emitting elements 3A to 3D has a first element electrode on the first surface 3a, as in the first to fifth embodiments. The first element electrode of the light-emitting element 3A is connected to the element electrode 71a of the first conductive pattern 71 via wire 31A, the first element electrode of the light-emitting element 3B is connected to the element electrode 71a via wire 31B, the first element electrode of the light-emitting element 3C is connected to the element electrode 71a via wire 31C, and the first element electrode of the light-emitting element 3D is connected to the element electrode 71a via wire 31D.

 図10は、第6実施形態に係る発光装置1の構成の一部の第2例を概略的に示す平面図である。図10に示されるように、複数の発光素子3は互いに直列に接続されていてもよい。図10の例でも、発光素子3として発光素子3Aから発光素子3Dが示されている。図10の例では、発光装置1は、第1導電パターン71、第2導電パターン72、素子電極73、素子電極74および素子電極75を含んでいる。第2導電パターン72の素子電極72a、素子電極73、素子電極74、素子電極75は、平面視において、第1樹脂部材51の内周縁によって囲まれた領域内に位置している。これらは絶縁膜22上に位置していてもよく、行列状に配置されていてもよい。 FIG. 10 is a plan view schematically illustrating a second example of a portion of the configuration of the light-emitting device 1 according to the sixth embodiment. As shown in FIG. 10, multiple light-emitting elements 3 may be connected in series. In the example of FIG. 10, light-emitting elements 3A to 3D are also shown as the light-emitting elements 3. In the example of FIG. 10, the light-emitting device 1 includes a first conductive pattern 71, a second conductive pattern 72, an element electrode 73, an element electrode 74, and an element electrode 75. The element electrode 72a, the element electrode 73, the element electrode 74, and the element electrode 75 of the second conductive pattern 72 are located within a region surrounded by the inner periphery of the first resin member 51 in a plan view. These may be located on the insulating film 22, or may be arranged in a matrix.

 素子電極72a上には発光素子3Aが位置しており、発光素子3Aの第2素子電極が素子電極72aと電気的に接続される。素子電極73上には発光素子3Bが位置しており、発光素子3Bの第2素子電極が素子電極73に接続される。発光素子3Bと同じく、発光素子3Cは素子電極74上に位置しており、発光素子3Cの第2素子電極が素子電極74と接続され、発光素子3Dは素子電極75上に位置しており、発光素子3Dの第2素子電極が素子電極75と接続される。発光素子3Aの第1素子電極はワイヤ31Aを介して素子電極73に接続され、発光素子3Bの第1素子電極はワイヤ31Bを介して素子電極74に接続され、発光素子3Cの第1素子電極はワイヤ31Cを介して素子電極75に接続され、発光素子3Dの第1素子電極はワイヤ31Dを介して素子電極71aに接続される。 Light-emitting element 3A is located on element electrode 72a, and the second element electrode of light-emitting element 3A is electrically connected to element electrode 72a. Light-emitting element 3B is located on element electrode 73, and the second element electrode of light-emitting element 3B is connected to element electrode 73. Like light-emitting element 3B, light-emitting element 3C is located on element electrode 74, and the second element electrode of light-emitting element 3C is connected to element electrode 74, and light-emitting element 3D is located on element electrode 75, and the second element electrode of light-emitting element 3D is connected to element electrode 75. The first element electrode of light-emitting element 3A is connected to element electrode 73 via wire 31A, the first element electrode of light-emitting element 3B is connected to element electrode 74 via wire 31B, the first element electrode of light-emitting element 3C is connected to element electrode 75 via wire 31C, and the first element electrode of light-emitting element 3D is connected to element electrode 71a via wire 31D.

 図9または図10において、複数の発光素子3は互いに同じ構造を有していてもよい。つまり、複数の発光素子3は互いに同じ波長範囲の励起光を出力してもよい。あるいは、複数の発光素子3の少なくともいずれか一つが、他の発光素子3とは異なる構造を有していてもよい。つまり、発光素子3の少なくともいずれか一つ(第2発光素子に相当)が、他の発光素子3(第1発光素子に相当)が発する光の波長範囲とは異なる波長範囲にピーク波長を有する光を発してもよい。例えば、発光素子3Dは、発光素子3Aから発光素子3Cと異なる波長範囲のピーク波長を有する光を発してもよい。 In Figures 9 and 10, the multiple light-emitting elements 3 may have the same structure. That is, the multiple light-emitting elements 3 may output excitation light in the same wavelength range. Alternatively, at least one of the multiple light-emitting elements 3 may have a structure different from the other light-emitting elements 3. That is, at least one of the light-emitting elements 3 (corresponding to the second light-emitting element) may emit light having a peak wavelength in a wavelength range different from the wavelength range of light emitted by the other light-emitting elements 3 (corresponding to the first light-emitting element). For example, light-emitting element 3D may emit light having a peak wavelength in a wavelength range different from that of light-emitting elements 3A to 3C.

 具体的な例として、発光素子3Aから発光素子3Cが青色の波長の励起光を出射する。波長変換部材4は、該励起光に基づいて蛍光を発するYAG蛍光体粒子を含む。発光素子3Dには、赤色の光を発する発光素子が採用され得る。発光素子3Dは半導体発光素子であってもよく、例えばLED素子であってもよい。この発光素子3Dが発する光は波長変換部材4によってあまり変換されなくてもよい。つまり、発光素子3Dは、発光素子3Aから発光素子3Cが発する励起光よりも波長変換部材4の吸収率の低い光を発してもよい。この発光素子3Dからの赤色光は充填材53および波長変換部材4を主として透過して外部に出射され得る。 As a specific example, light-emitting elements 3A to 3C emit excitation light with a blue wavelength. Wavelength conversion member 4 contains YAG phosphor particles that emit fluorescence based on the excitation light. A light-emitting element that emits red light can be used for light-emitting element 3D. Light-emitting element 3D may be a semiconductor light-emitting element, such as an LED element. The light emitted by light-emitting element 3D does not need to be significantly converted by wavelength conversion member 4. In other words, light-emitting element 3D may emit light that is less absorbed by wavelength conversion member 4 than the excitation light emitted by light-emitting elements 3A to 3C. The red light from light-emitting element 3D can be emitted to the outside, mainly passing through filler 53 and wavelength conversion member 4.

 青色の励起光によって励起されるYAG蛍光体粒子による白色光には、主として赤色が不足するところ、発光素子3Dによって赤色を補充することができる。つまり、発光装置1は、赤みが補充された白色光を照明光として出射することができる。言い換えれば、照明光の演色性を向上させることができる。 While white light produced by YAG phosphor particles excited by blue excitation light is primarily lacking in red, the light-emitting element 3D can supplement this with red. In other words, the light-emitting device 1 can emit white light supplemented with red as illumination light. In other words, the color rendering properties of the illumination light can be improved.

 <第7実施形態>
 図11は、第7実施形態にかかる発光装置1の構成の一部の一例を概略的に示す平面図である。第7実施形態に係る発光装置1は複数の発光素子3を含んでいる。第7実施形態では、複数の発光素子3は平面視において第1樹脂部材51によって囲まれている。つまり、複数の発光素子3は、平面視において第1樹脂部材51の内周縁によって囲まれた領域内に位置している。複数の発光素子3の全てが該領域内に含まれてもよく、複数の発光素子3は当該領域からはみ出していなくてもよい。第7実施形態では、発光素子3の一つ(第2発光素子の一例に相当)には、他の発光素子3の一つ(第1発光素子の一例に相当)への電圧とは異なる電圧が入力される。
Seventh Embodiment
11 is a plan view schematically illustrating an example of a portion of the configuration of a light-emitting device 1 according to the seventh embodiment. The light-emitting device 1 according to the seventh embodiment includes a plurality of light-emitting elements 3. In the seventh embodiment, the plurality of light-emitting elements 3 are surrounded by a first resin member 51 in a planar view. That is, the plurality of light-emitting elements 3 are located within a region surrounded by the inner peripheral edge of the first resin member 51 in a planar view. All of the plurality of light-emitting elements 3 may be included within the region, or the plurality of light-emitting elements 3 may not protrude from the region. In the seventh embodiment, a voltage different from the voltage applied to one of the other light-emitting elements 3 (corresponding to an example of a first light-emitting element) is input to one of the light-emitting elements 3 (corresponding to an example of a second light-emitting element).

 図11に示されるように、発光装置1は第3導電パターン77をさらに含んでいる。第3導電パターン77は、素子電極77aと、外部電極77bと、配線77cとを含んでいる。図11に示されるように、素子電極77aは平面視において円弧形状を有していてもよく、第2導電パターン72の素子電極72aと間隔を隔てて隣り合っていてもよい。素子電極77aの中心角は180度未満であってもよく、第1導電パターン71の素子電極71aおよび第2導電パターン72の素子電極72aと同心状であってもよい。図11に示されるように、第1導電パターン71の素子電極71aの中心角も180度未満であってよく、素子電極71aは素子電極77aと周方向において間隔を空けて並んでいてもよい。 As shown in FIG. 11, the light-emitting device 1 further includes a third conductive pattern 77. The third conductive pattern 77 includes an element electrode 77a, an external electrode 77b, and wiring 77c. As shown in FIG. 11, the element electrode 77a may have an arc shape in a plan view and may be adjacent to the element electrode 72a of the second conductive pattern 72 at an interval. The central angle of the element electrode 77a may be less than 180 degrees and may be concentric with the element electrode 71a of the first conductive pattern 71 and the element electrode 72a of the second conductive pattern 72. As shown in FIG. 11, the central angle of the element electrode 71a of the first conductive pattern 71 may also be less than 180 degrees, and the element electrode 71a may be aligned with the element electrode 77a at an interval in the circumferential direction.

 外部電極77bは平面視において、基板21の角部のうち、外部電極71bおよび外部電極72bが設けられていない角部に位置していてもよい。外部電極71bは平面視において矩形形状を有してもよい。外部電極71bには、配線87の一端が接続される。 In a plan view, the external electrode 77b may be located at a corner of the substrate 21 where the external electrodes 71b and 72b are not provided. The external electrode 71b may have a rectangular shape in a plan view. One end of the wiring 87 is connected to the external electrode 71b.

 配線77cは素子電極77aおよび外部電極77bを電気的に接続する。配線77cは帯状形状を有しており、素子電極77aから外部電極77bに直線状に延びてもよい。配線72cは例えば基板21の対角線に沿って延びている。素子電極77aの直径は配線77cの幅よりも大きくてもよく、外部電極77bの対角の長さは配線72cの幅よりも大きくてもよい。 Wiring 77c electrically connects element electrode 77a and external electrode 77b. Wiring 77c has a strip shape and may extend linearly from element electrode 77a to external electrode 77b. Wiring 72c extends, for example, along a diagonal line of substrate 21. The diameter of element electrode 77a may be larger than the width of wiring 77c, and the diagonal length of external electrode 77b may be larger than the width of wiring 72c.

 図11の例では、複数の発光素子3として発光素子3Aから発光素子3Dが示されている。図11に示されるように、素子電極72a上には発光素子3Aから発光素子3Dが位置してもよく、発光素子3Aから発光素子3Dの第2素子電極が素子電極72aと電気的に接続されてもよい。発光素子3Aから発光素子3Dは行列状に配置されていてもよい。発光素子3B(第1発光素子の一例に相当)の第1素子電極はワイヤ31Bを通じて素子電極71a(第1電極の一例に相当)に接続され、発光素子3C(第1発光素子の一例)の第1素子電極はワイヤ31Cを通じて素子電極71aに接続されてもよい。発光素子3A(第2発光素子の一例に相当)の第1素子電極はワイヤ31Aを通じて素子電極77a(第2電極の一例に相当)に接続されてもよく、発光素子3D(第2発光素子の一例に相当)の第1素子電極はワイヤ31Dを通じて素子電極77aに接続されてもよい。 In the example of FIG. 11, light-emitting elements 3A to 3D are shown as the multiple light-emitting elements 3. As shown in FIG. 11, light-emitting elements 3A to 3D may be positioned on element electrode 72a, and the second element electrodes of light-emitting elements 3A to 3D may be electrically connected to element electrode 72a. Light-emitting elements 3A to 3D may be arranged in a matrix. The first element electrode of light-emitting element 3B (an example of a first light-emitting element) may be connected to element electrode 71a (an example of a first electrode) via wire 31B, and the first element electrode of light-emitting element 3C (an example of a first light-emitting element) may be connected to element electrode 71a via wire 31C. The first element electrode of light-emitting element 3A (an example of a second light-emitting element) may be connected to element electrode 77a (an example of a second electrode) via wire 31A, and the first element electrode of light-emitting element 3D (an example of a second light-emitting element) may be connected to element electrode 77a via wire 31D.

 図12は、発光装置1の電気的な構成の一例を概略的に示す図である。図12に示されるように、配線85および配線86は第1電源81に接続されていてもよく、配線86および配線87は第2電源82に接続されていてもよい。配線86は接地されていてもよい。第1電源81および第2電源82は互いに異なる電圧を出力してもよい。第1電源81および第2電源82の各々は不図示のスイッチング電源回路を含んでいてもよい。第1電源81および第2電源82は可変の直流電圧を出力し得る。 FIG. 12 is a diagram schematically illustrating an example of the electrical configuration of the light-emitting device 1. As shown in FIG. 12, wiring 85 and wiring 86 may be connected to a first power supply 81, and wiring 86 and wiring 87 may be connected to a second power supply 82. Wiring 86 may be grounded. The first power supply 81 and the second power supply 82 may output different voltages. Each of the first power supply 81 and the second power supply 82 may include a switching power supply circuit (not shown). The first power supply 81 and the second power supply 82 may output a variable DC voltage.

 制御部80は第1電源81および第2電源82の出力電圧を制御してもよい。制御部80は制御回路であり、例えば、中央演算処理装置(Central Processing Unit:CPU)および記憶部を含んでいる。記憶部は、ROM(Read Only Memory)およびRAM(Random Access Memory)などの、CPUが読み取り可能な非一時的な記録媒体を含む。記憶部は、例えば、第1電源81、第2電源82を制御するためのプログラムなどを記憶している。制御部80における各種の機能は、CPUが記憶部内のプログラムを実行することで実現される。 The control unit 80 may control the output voltages of the first power supply 81 and the second power supply 82. The control unit 80 is a control circuit and includes, for example, a central processing unit (CPU) and a memory unit. The memory unit includes non-transitory recording media that can be read by the CPU, such as read-only memory (ROM) and random access memory (RAM). The memory unit stores, for example, programs for controlling the first power supply 81 and the second power supply 82. The various functions of the control unit 80 are realized when the CPU executes the programs in the memory unit.

 制御部80は、事前に設定された第1目標値で第1電源81を制御してもよい。第1目標値は、電圧、電流または電力についての第1電源81の目標値である。第1目標値は、発光素子3Bおよび発光素子3Cに所定の光量で光を発するための値であり得る。制御部80は、事前に設定された第2目標値で第2電源82を制御してもよい。第2目標値は、電圧、電流または電力についての第2電源82の目標値である。第2目標値は、発光素子3Aおよび発光素子3Dに所定の光量で光を発するための値であり得る。このため、第1電源81および第2電源82の各々は、各発光素子3に適した電圧または電流を出力することができる。 The control unit 80 may control the first power supply 81 using a predetermined first target value. The first target value is a target value for the first power supply 81 regarding voltage, current, or power. The first target value may be a value for causing light-emitting elements 3B and 3C to emit a predetermined amount of light. The control unit 80 may control the second power supply 82 using a predetermined second target value. The second target value is a target value for the second power supply 82 regarding voltage, current, or power. The second target value may be a value for causing light-emitting elements 3A and 3D to emit a predetermined amount of light. Therefore, each of the first power supply 81 and the second power supply 82 can output a voltage or current appropriate for each light-emitting element 3.

 発光素子3Bおよび発光素子3Cは第1光を発し、発光素子3Aおよび発光素子3Dは第1光とは異なる波長スペクトルを有する第2光を発する。具体的な一例として、発光素子3Bおよび発光素子3Cは紫色の励起光を発し、発光素子3Aおよび発光素子3Dは青色の光を発する。 Light-emitting elements 3B and 3C emit a first light, and light-emitting elements 3A and 3D emit a second light having a wavelength spectrum different from that of the first light. As a specific example, light-emitting elements 3B and 3C emit purple excitation light, and light-emitting elements 3A and 3D emit blue light.

 波長変換部材4は、例えば、既述の赤色蛍光体、緑色蛍光体および青色蛍光体を含む。図13は、蛍光体の吸収率の波長依存性の一例を示すグラフである。グラフG1は、青色蛍光体についての波長依存性を示し、グラフG2は、赤色蛍光体についての波長依存性を示し、グラフG3は、緑色蛍光体についての波長依存性を示している。図13に示されるように、青色蛍光体の波長依存性は赤色蛍光体および青色蛍光体の波長依存性に比べて大きい。 The wavelength conversion member 4 includes, for example, the red, green, and blue phosphors already described. Figure 13 is a graph showing an example of the wavelength dependence of the absorptance of phosphors. Graph G1 shows the wavelength dependence for the blue phosphor, graph G2 shows the wavelength dependence for the red phosphor, and graph G3 shows the wavelength dependence for the green phosphor. As shown in Figure 13, the wavelength dependence of the blue phosphor is greater than the wavelength dependence of the red and blue phosphors.

 発光素子3Bおよび発光素子3Cの励起光のピーク波長はその製造ばらつきなどにより個体ごとにばらつき得る。このため、波長変換部材4の青色蛍光体の含有量が一定である場合には、発光素子3の固体ばらつきによって、波長変換部材4からの照明光にばらつきが生じてしまう。つまり、照明光における青色成分の量が発光素子3Bおよび発光素子3Cの個体差に応じて変動してしまう。 The peak wavelength of the excitation light from light-emitting element 3B and light-emitting element 3C can vary from one element to another due to manufacturing variations, etc. Therefore, if the content of blue phosphor in wavelength conversion member 4 is constant, variations between individual light-emitting elements 3 will cause variations in the illumination light from wavelength conversion member 4. In other words, the amount of blue component in the illumination light will fluctuate depending on the individual differences between light-emitting element 3B and light-emitting element 3C.

 上述の例では、発光素子3Aおよび発光素子3Dは青色の光を発する。この青色の光の少なくとも一部は充填材53および波長変換部材4を透過して外部に出射される。制御部80は、発光素子3Bおよび発光素子3Cの固体ばらつきに応じた第2目標値で第2電源82を制御してもよい。この第2目標値は例えば実験またはシミュレーションにより事前に設定される。具体的には、制御部80が第1電源81および第2電源82を制御して発光素子3Aから発光素子3Dを発光させ、発光装置1の照明光の評価値が所定の目標範囲内になるように、第2電源82の出力の第2目標値を設定するとよい。評価値は色温度および色の偏差値の少なくともいずれかを含み得る。第2目標値は、制御部80の記憶部(例えばメモリ)に事前に記憶される。 In the above example, light-emitting elements 3A and 3D emit blue light. At least a portion of this blue light passes through filler 53 and wavelength conversion member 4 and is emitted to the outside. Control unit 80 may control second power supply 82 using a second target value that corresponds to individual variations in light-emitting elements 3B and 3C. This second target value is set in advance, for example, through experiments or simulations. Specifically, control unit 80 controls first power supply 81 and second power supply 82 to cause light-emitting elements 3A to 3D to emit light, and sets a second target value for the output of second power supply 82 so that the evaluation value of the illumination light of light-emitting device 1 falls within a predetermined target range. The evaluation value may include at least one of color temperature and color deviation. The second target value is stored in advance in a storage unit (e.g., a memory) of control unit 80.

 より一般的な概念で説明すると、波長変換部材4は、第1蛍光(例えば青色の蛍光)を発する第1蛍光体41aと、第2蛍光(例えば赤色または緑色の蛍光)を発する第2蛍光体41bとを含む(図1も参照)。励起光についての第2蛍光体41bの吸収率の波長依存性は第1蛍光体41aの波長依存性よりも大きい。発光装置1は、波長変換部材4の励起光を発する発光素子3と、第2蛍光と同色の光を発する発光素子3とを含む。ここでいう同色の光とは、第1蛍光体41aの第1蛍光の波長よりも第2蛍光体41bの第2蛍光の波長に近いピーク波長を有する光をいう。第2蛍光体41bと同色の光を発する発光素子3は第2電源82によって給電され、励起光を発する発光素子3は第1電源81によって給電される。制御部80は、励起光の波長ばらつきに応じた第2目標値で第2電源82を制御する。これにより、励起光を発する発光素子3の固体ばらつきを吸収することができ、発光装置1はより適切な照明光を出射することができる。 Explaining in more general terms, the wavelength conversion member 4 includes a first phosphor 41a that emits a first fluorescence (e.g., blue fluorescence) and a second phosphor 41b that emits a second fluorescence (e.g., red or green fluorescence) (see also Figure 1). The wavelength dependence of the absorption rate of the second phosphor 41b for excitation light is greater than the wavelength dependence of the first phosphor 41a. The light emitting device 1 includes a light emitting element 3 that emits excitation light for the wavelength conversion member 4 and a light emitting element 3 that emits light of the same color as the second fluorescence. Here, "light of the same color" refers to light having a peak wavelength closer to the wavelength of the second fluorescence of the second phosphor 41b than to the wavelength of the first fluorescence of the first phosphor 41a. The light emitting element 3 that emits light of the same color as the second phosphor 41b is powered by a second power source 82, and the light emitting element 3 that emits excitation light is powered by a first power source 81. The control unit 80 controls the second power source 82 using a second target value that corresponds to the wavelength variation of the excitation light. This allows individual variations in the light-emitting elements 3 that emit excitation light to be absorbed, allowing the light-emitting device 1 to emit more appropriate illumination light.

 <第8実施形態>
 第1実施形態から第7実施形態の例では、発光素子3の第1素子電極および第2素子電極は、それぞれ、発光素子3の第1面3aおよび第2面3bに位置していた。しかしながら、本実施形態は必ずしもこれに限らない。例えば、第1素子電極および第2素子電極は発光素子3の第2面3bに位置していてもよい。
Eighth Embodiment
In the examples of the first to seventh embodiments, the first element electrode and the second element electrode of the light-emitting element 3 are located on the first surface 3 a and the second surface 3 b of the light-emitting element 3, respectively. However, this embodiment is not necessarily limited to this. For example, the first element electrode and the second element electrode may be located on the second surface 3 b of the light-emitting element 3.

 図14は、第8実施形態に係る発光装置1の構成の一部の第1例を概略的に示す断面図である。図14の例では、発光素子3の第2面3bが素子電極71aおよび素子電極72aの上に跨って位置している。発光素子3の第2面3bには第1素子電極および第2素子電極が位置しており、第1素子電極が素子電極71aに接続され、第2素子電極が素子電極72aに接続される。例えば半田などの電極材によって、第1素子電極が素子電極71aに接続され、第2素子電極が素子電極72aに接続される。 FIG. 14 is a cross-sectional view schematically showing a first example of a portion of the configuration of a light-emitting device 1 according to the eighth embodiment. In the example of FIG. 14, the second surface 3b of the light-emitting element 3 is located across the element electrodes 71a and 72a. A first element electrode and a second element electrode are located on the second surface 3b of the light-emitting element 3, with the first element electrode connected to the element electrode 71a and the second element electrode connected to the element electrode 72a. For example, the first element electrode is connected to the element electrode 71a and the second element electrode is connected to the element electrode 72a by an electrode material such as solder.

 あるいは、発光素子3の第1面3aに第1素子電極および第2素子電極が位置していてもよい。図15は、第8実施形態に係る発光装置1の構成の一部の第2例を概略的に示す断面図である。図15の例では、発光素子3は基板21上に形成されている。つまり、発光素子3の第2面3bが基板21に接している。絶縁膜22は、発光素子3と同じ層に形成されてもよく、基板21の第1面に平行な方向において発光素子3と隣り合っていてもよい。絶縁膜22は発光素子3の側面および基板21と接していてもよい。この場合、発光素子3が位置する基板部2は、絶縁膜22を含んでいないともいえる。 Alternatively, the first element electrode and the second element electrode may be located on the first surface 3a of the light-emitting element 3. Figure 15 is a cross-sectional view schematically showing a second example of a portion of the configuration of the light-emitting device 1 according to the eighth embodiment. In the example of Figure 15, the light-emitting element 3 is formed on the substrate 21. That is, the second surface 3b of the light-emitting element 3 is in contact with the substrate 21. The insulating film 22 may be formed in the same layer as the light-emitting element 3, or may be adjacent to the light-emitting element 3 in a direction parallel to the first surface of the substrate 21. The insulating film 22 may be in contact with the side surface of the light-emitting element 3 and the substrate 21. In this case, it can be said that the substrate portion 2 on which the light-emitting element 3 is located does not include the insulating film 22.

 導電パターン7は絶縁膜22の上に形成されている。導電パターン7は平面視において発光素子3を避けた領域に位置している。発光素子3の第1面3aの第1素子電極はワイヤ31Aを介して第1導電パターン71の素子電極71aに接続され、発光素子3の第1面3aの第2素子電極はワイヤ31Bを介して第2導電パターン72の素子電極72aに接続される。 The conductive pattern 7 is formed on the insulating film 22. In a plan view, the conductive pattern 7 is located in an area that avoids the light-emitting element 3. The first element electrode on the first surface 3a of the light-emitting element 3 is connected to the element electrode 71a of the first conductive pattern 71 via wire 31A, and the second element electrode on the first surface 3a of the light-emitting element 3 is connected to the element electrode 72a of the second conductive pattern 72 via wire 31B.

 発光素子3は第2面3bからも励起光を出射し得る。このため、基板21は励起光についての反射性を有していてもよい。励起光についての基板21の反射率は、例えば、50%以上であってもよく、60%以上であってもよく、70%以上であってもよく、80%以上であってもよく、90%以上であってもよく、95%以上であってもよい。基板21は照明光についての反射性を有してもよい。照明光についての基板21の反射率(最大値)は、例えば、50%以上であってもよく、60%以上であってもよく、70%以上であってもよく、80%以上であってもよく、90%以上であってもよく、95%以上であってもよい。また、基板21の熱伝導率は波長変換部材4の熱伝導率よりも高くてもよい。基板21には、例えば、アルミニウムによって形成されてもよい。基板21にはMiro(登録商標)材を採用することができる。このように基板21が励起光および照明光の少なくともいずれか一方を反射するので、反射材8は設けられていなくてもよい。 The light-emitting element 3 can also emit excitation light from the second surface 3b. Therefore, the substrate 21 may be reflective to the excitation light. The reflectance of the substrate 21 to the excitation light may be, for example, 50% or more, 60% or more, 70% or more, 80% or more, 90% or more, or 95% or more. The substrate 21 may be reflective to the illumination light. The reflectance (maximum value) of the substrate 21 to the illumination light may be, for example, 50% or more, 60% or more, 70% or more, 80% or more, 90% or more, or 95% or more. The thermal conductivity of the substrate 21 may be higher than that of the wavelength conversion member 4. The substrate 21 may be made of, for example, aluminum. Miro (registered trademark) material can be used for the substrate 21. Because the substrate 21 reflects at least one of the excitation light and the illumination light in this way, the reflective material 8 may not be provided.

 <第9実施形態>
 図16は、第9実施形態にかかる発光装置1の構成の第1例を概略的に示す断面図である。第9の実施形態の第1例にかかる発光装置1は、第1伝熱部材561の有無という点で、第1実施形態から第8実施形態にかかる発光装置1と相違する。図17は、第9実施形態の第1例にかかる間接部材5および第1伝熱部材561の構成の一例を概略的に示す斜視図である。
Ninth Embodiment
Fig. 16 is a cross-sectional view schematically showing a first example of the configuration of the light-emitting device 1 according to the ninth embodiment. The light-emitting device 1 according to the first example of the ninth embodiment differs from the light-emitting devices 1 according to the first to eighth embodiments in the presence or absence of a first heat-transfer member 561. Fig. 17 is a perspective view schematically showing an example of the configuration of the intermediate member 5 and the first heat-transfer member 561 according to the first example of the ninth embodiment.

 第1伝熱部材561は間接部材5に対して波長変換部材4とは逆側に位置しており、間接部材5の第2面5bに接している。間接部材5は例えば透明セラミックによって形成される。透明セラミックには、例えば、YAG(YAl12),Y,Sc,Luおよびサファイアの少なくともいずれか一つを適用できる。これらの透明セラミックの室温での熱伝導率はガラスの室温での熱伝導率(1.1W/m・K程度)よりも10倍以上高い。特に、サファイアの熱伝導率はガラスの熱伝導率の40倍程度と高く、41W/m・K程度である。このため、間接部材5の材料にサファイアを適用すれば、より効果的に波長変換部材4からの熱を伝達させることができる。 The first heat transfer member 561 is located on the opposite side of the intermediate member 5 from the wavelength conversion member 4 and is in contact with the second surface 5b of the intermediate member 5. The intermediate member 5 is formed, for example, from a transparent ceramic. Examples of the transparent ceramic include at least one of YAG (Y3Al5O12), Y2O3 , Sc2O3 , Lu2O3 , and sapphire . The thermal conductivity of these transparent ceramics at room temperature is more than 10 times higher than that of glass at room temperature (approximately 1.1 W/m·K). In particular, the thermal conductivity of sapphire is approximately 41 W/m·K, approximately 40 times higher than that of glass. Therefore, using sapphire as the material for the intermediate member 5 allows for more effective transfer of heat from the wavelength conversion member 4.

 第1伝熱部材561の熱伝導率は波長変換部材4の熱伝導率よりも高く、また、間接部材5の熱伝導率よりも高い。第1伝熱部材561の熱伝導率は間接部材5の熱伝導率の2倍以上であってもよく、5倍以上であってもよい。一方、励起光についての第1伝熱部材561の透過率は、間接部材5の透過率よりも低くてもよい。励起光についての第1伝熱部材561の透過率は例えば10%以下であってもよく、5%以下であってもよく、2%以下であってもよく、1%以下であってもよい。照明光についての第1伝熱部材561の透過率(最大値)も例えば10%以下であってもよく、5%以下であってもよく、2%以下であってもよく、1%以下であってもよい。第1伝熱部材561の透過率は低くてもよいので、第1伝熱部材561の材料の選定自由度を向上させることができる。このため、より熱伝導性の高い材料を第1伝熱部材561に適用することができる。例えば、第1伝熱部材561の材料には、金属が適用され得る。具体的な例として、第1伝熱部材561の材料には、銀、銅、金、アルミニウム、亜鉛、クロム、ニッケルまたは錫、あるいは、これらの少なくとも1つを含む合金が適用され得る。 The thermal conductivity of the first heat transfer member 561 is higher than that of the wavelength conversion member 4 and is also higher than that of the indirect member 5. The thermal conductivity of the first heat transfer member 561 may be more than twice, or even more than five times, that of the indirect member 5. On the other hand, the transmittance of the first heat transfer member 561 for excitation light may be lower than that of the indirect member 5. The transmittance of the first heat transfer member 561 for excitation light may be, for example, 10% or less, 5% or less, 2% or less, or 1% or less. The transmittance (maximum value) of the first heat transfer member 561 for illumination light may also be, for example, 10% or less, 5% or less, 2% or less, or 1% or less. Because the transmittance of the first heat transfer member 561 may be low, the freedom in selecting the material for the first heat transfer member 561 can be improved. Therefore, a material with higher thermal conductivity can be used for the first heat transfer member 561. For example, metal may be used as the material of the first heat transfer member 561. Specific examples of materials that may be used for the first heat transfer member 561 include silver, copper, gold, aluminum, zinc, chromium, nickel, and tin, or an alloy containing at least one of these.

 図16および図17に示されるように、第1伝熱部材561は板状またはシート状の形状を有していてもよい。第1伝熱部材561は、第1部分571と、第2部分572とを含んでいる。第1部分571は、第1伝熱部材561のうち、基板21の厚さ方向において第1放熱部材6と対向している部分である。つまり、第1部分571は平面視において第1放熱部材6と重なり合う部分である。 As shown in Figures 16 and 17, the first heat transfer member 561 may have a plate-like or sheet-like shape. The first heat transfer member 561 includes a first portion 571 and a second portion 572. The first portion 571 is the portion of the first heat transfer member 561 that faces the first heat dissipation member 6 in the thickness direction of the substrate 21. In other words, the first portion 571 is the portion that overlaps with the first heat dissipation member 6 in a planar view.

 第2部分572は、第1伝熱部材561のうち、基板21の厚さ方向において第1放熱部材6と対向していない部分である。つまり、第2部分572は平面視において第1放熱部材6と重なり合わない部分である。第2部分572は第1部分571と接続される。つまり、第2部分572は第1部分571と連続する。第2部分572は平面視において第1放熱部材6から張り出した状態で位置している。図16に示されるように、第2部分572の少なくとも一部は第1放熱部材6よりも第1樹脂部材51側に位置する。 The second portion 572 is a portion of the first heat transfer member 561 that does not face the first heat dissipation member 6 in the thickness direction of the substrate 21. In other words, the second portion 572 is a portion that does not overlap the first heat dissipation member 6 in a planar view. The second portion 572 is connected to the first portion 571. In other words, the second portion 572 is continuous with the first portion 571. The second portion 572 is positioned in a state that protrudes from the first heat dissipation member 6 in a planar view. As shown in FIG. 16 , at least a portion of the second portion 572 is positioned closer to the first resin member 51 than the first heat dissipation member 6.

 図16に示されるように、第1伝熱部材561は放熱部材61および放熱部材62の各々と対向し得る。つまり、第1伝熱部材561は第1部分571として、放熱部材61と対向する部分5711、および、放熱部材62と対向する部分5712を有し得る。第2部分572は部分5711と部分5712との間に位置し得る。 As shown in FIG. 16, the first heat transfer member 561 may face both the heat dissipation member 61 and the heat dissipation member 62. That is, the first heat transfer member 561 may have, as the first portion 571, a portion 5711 facing the heat dissipation member 61 and a portion 5712 facing the heat dissipation member 62. The second portion 572 may be located between portions 5711 and 5712.

 第1伝熱部材561は、基板21の厚さ方向において波長変換部材4の少なくとも一部と対向する領域に、第1開口56aを有している。つまり、第1伝熱部材561は該領域には位置していない。図16および図17に示されるように、第1開口56aは第2部分572に形成されている。第1開口56aは第2部分572によって囲まれてもよい。図17に示されるように、第1開口56aは平面視において円形状を有していてもよい。第1開口56aは第2部分572を貫通する。この第1開口56aは、発光素子3からの励起光を波長変換部材4側に通過させるための開口である。 The first heat transfer member 561 has a first opening 56a in a region facing at least a portion of the wavelength conversion member 4 in the thickness direction of the substrate 21. In other words, the first heat transfer member 561 is not located in this region. As shown in Figures 16 and 17, the first opening 56a is formed in the second portion 572. The first opening 56a may be surrounded by the second portion 572. As shown in Figure 17, the first opening 56a may have a circular shape in a planar view. The first opening 56a passes through the second portion 572. This first opening 56a is an opening that allows excitation light from the light-emitting element 3 to pass through to the wavelength conversion member 4 side.

 第1伝熱部材561は間接部材5の第2面5bのうち第1開口56a以外の全面と接していてもよい。第1伝熱部材561は間接部材5の第2面5bに非接合状態で接していてもよい。例えば第1伝熱部材561は金属板であって、着脱可能な状態で配置されていてもよい。その一方で、第1伝熱部材561は間接部材5の第2面5bに接合していてもよい。第1伝熱部材561の材料に金属が適用される場合、第1伝熱部材561は例えばメッキ、溶射または塗布により、間接部材5の第2面5bに形成されてもよい。第1伝熱部材561は例えば、メッキにより形成される場合、間接部材5を発光装置1に載置する前に、間接部材5のうち第1伝熱部材561を形成する場所以外をマスクして被メッキ部とした状態で、第1伝熱部材561の材料を原料とする真空蒸着、スパッタリング、CVD(化学気相成長法)または無電解メッキ等により、形成することができる。また、その上からさらに電解メッキをしても良い。この場合、第1伝熱部材561を容易に厚く形成でき、より効果的に波長変換部材4からの熱を伝達させることができる。その他の方法として、間接部材5単体の全面に真空蒸着、スパッタリング、CVD(化学気相成長法)または無電解メッキにより、第1伝熱部材561の金属膜を形成した後に、該金属膜のうち、第1開口56aおよび波長変換部材4の形成位置に位置する部分にレーザ光を照射して、該金属膜の一部を除去することでも、第1伝熱部材561を形成可能である。この場合、マスクをせずに第1伝熱部材561が形成可能であり、さらにその上から同様に電解メッキをしても良い。また、レーザ光による除去は電解メッキ後でも良い。この場合、第1伝熱部材561は、間接部材5の第2面5bに形成された伝熱膜であってもよい。 The first heat transfer member 561 may be in contact with the entire second surface 5b of the intermediate member 5 except for the first opening 56a. The first heat transfer member 561 may be in contact with the second surface 5b of the intermediate member 5 in an unbonded state. For example, the first heat transfer member 561 may be a metal plate and arranged in a detachable state. Alternatively, the first heat transfer member 561 may be bonded to the second surface 5b of the intermediate member 5. When the first heat transfer member 561 is made of a metal, the first heat transfer member 561 may be formed on the second surface 5b of the intermediate member 5 by, for example, plating, spraying, or coating. When the first heat transfer member 561 is formed by plating, for example, the first heat transfer member 561 can be formed by vacuum deposition, sputtering, CVD (chemical vapor deposition), electroless plating, or the like using the material of the first heat transfer member 561 as a raw material, with the area of the intermediate member 5 other than the area where the first heat transfer member 561 will be formed masked to form the plated portion before placing the intermediate member 5 on the light emitting device 1. Alternatively, electrolytic plating may be performed on top of the first heat transfer member 561. In this case, the first heat transfer member 561 can be easily formed thicker, allowing for more effective heat transfer from the wavelength conversion member 4. Alternatively, the first heat transfer member 561 can be formed by forming a metal film for the first heat transfer member 561 on the entire surface of the intermediate member 5 alone by vacuum deposition, sputtering, CVD (chemical vapor deposition), or electroless plating, and then irradiating the metal film with laser light at the portions where the first opening 56a and the wavelength conversion member 4 will be formed to remove a portion of the metal film. In this case, the first heat transfer member 561 can be formed without a mask, and electrolytic plating may be performed on top of it in the same manner. Laser removal may also be performed after electrolytic plating. In this case, the first heat transfer member 561 may be a heat transfer film formed on the second surface 5b of the intermediate member 5.

 あるいは、第1伝熱部材561の材料には、エポキシ樹脂などの有機樹脂が適用されてもよい。この場合でも、第1伝熱部材561は非接合状態で間接部材5の第2面5bに接していてもよく、あるいは、間接部材5の第2面5bに接合していてもよい。第1伝熱部材561は例えば塗装により、間接部材5の第2面5bに形成されてもよい。この場合も、第1伝熱部材561は伝熱膜であってもよい。 Alternatively, the material of the first heat transfer member 561 may be an organic resin such as epoxy resin. Even in this case, the first heat transfer member 561 may be in contact with the second surface 5b of the intermediate member 5 in an unbonded state, or may be bonded to the second surface 5b of the intermediate member 5. The first heat transfer member 561 may be formed on the second surface 5b of the intermediate member 5 by, for example, painting. In this case, the first heat transfer member 561 may also be a heat transfer film.

 このような発光装置1において、発光素子3からの励起光は、第1樹脂部材51によって囲まれた領域および第1開口56aを通じて間接部材5に入射する。そして、励起光は間接部材5を透過して波長変換部材4に入射する。波長変換部材4は励起光の少なくとも一部を吸収して、照明光(つまり、蛍光)および熱を発する。 In this light-emitting device 1, excitation light from the light-emitting element 3 enters the indirect member 5 through the area surrounded by the first resin member 51 and the first opening 56a. The excitation light then passes through the indirect member 5 and enters the wavelength conversion member 4. The wavelength conversion member 4 absorbs at least a portion of the excitation light and emits illumination light (i.e., fluorescent light) and heat.

 波長変換部材4で生じた熱の一部は、間接部材5の内部を経由して第1伝熱部材561の第2部分572に伝達される。この熱は第2部分572から第1部分571を経由して、第1放熱部材6に伝達される。第1伝熱部材561の熱伝導率は間接部材5の熱伝導率よりも高いので、波長変換部材4で生じた熱をより効果的に第1放熱部材6に伝達させることができる。つまり、間接部材5のうち第1放熱部材6から離れた部分の熱も、高熱伝導性の第1伝熱部材561を通じて第1放熱部材6に伝達される。例えば間接部材5のうち第1樹脂部材51の近傍部分の熱が第1伝熱部材561を通じて第1放熱部材6に伝達される。このため、発光装置1の放熱性をさらに向上させることができる。したがって、波長変換部材4の温度上昇をさらに緩和することができる。 A portion of the heat generated in the wavelength conversion member 4 is transferred to the second portion 572 of the first heat transfer member 561 via the interior of the intermediate member 5. This heat is transferred from the second portion 572 to the first portion 571 and then to the first heat dissipation member 6. Because the thermal conductivity of the first heat transfer member 561 is higher than that of the intermediate member 5, the heat generated in the wavelength conversion member 4 can be transferred more effectively to the first heat dissipation member 6. In other words, heat from a portion of the intermediate member 5 that is far from the first heat dissipation member 6 is also transferred to the first heat dissipation member 6 via the highly thermally conductive first heat transfer member 561. For example, heat from a portion of the intermediate member 5 near the first resin member 51 is transferred to the first heat dissipation member 6 via the first heat transfer member 561. This further improves the heat dissipation performance of the light emitting device 1. This further mitigates the temperature rise in the wavelength conversion member 4.

 ひいては、間接部材5の温度上昇も緩和することができ、また、間接部材5の温度分布のばらつきも低減させることもできる。したがって、熱膨張による波長変換部材4と間接部材5との間の剥離の可能性を低減させることもできる。また、間接部材5がサファイアである場合、高温から低温への急激な温度変化によってサファイアにクラックが生じるおそれがある。例えば発光装置1を低温環境下で使用する場合には、発光装置1の温度が急激に低下するおそれがある。クラックは、温度の変化量が大きいほど生じやすい。本実施の形態では、間接部材5の温度上昇も緩和されるので、たとえ温度低下が生じても、その温度の変化量は比較的に小さく、クラックが生じる可能性を低減させることもできる。つまり、発光装置1の信頼性を向上させることもできる。 Finally, this can mitigate the temperature rise of the intermediate member 5 and reduce variations in the temperature distribution of the intermediate member 5. This can reduce the possibility of peeling between the wavelength conversion member 4 and the intermediate member 5 due to thermal expansion. Furthermore, if the intermediate member 5 is made of sapphire, a sudden change in temperature from high to low may cause cracks in the sapphire. For example, when the light emitting device 1 is used in a low-temperature environment, the temperature of the light emitting device 1 may drop suddenly. Cracks are more likely to occur the greater the temperature change. In this embodiment, the temperature rise of the intermediate member 5 is also mitigated, so even if a temperature drop occurs, the temperature change is relatively small, reducing the possibility of cracks occurring. In other words, the reliability of the light emitting device 1 can also be improved.

 ところで、透明セラミックの熱伝導率は、温度が高くなるにしたがって低下する温度依存性を有し得る。図18は、サファイアの熱伝導率の温度依存性の一例を概略的に示すグラフである。図18に示されるように、サファイアの熱伝導率は室温において41W/mK程度であるものの、摂氏200度において20W/mK程度まで低下する。このため、このような温度依存性を有する透明材料を間接部材5に適用すると、波長変換部材4の発光に伴う温度上昇によって、間接部材5の熱伝導性が低下してしまう。しかるに、第9実施形態では、第1伝熱部材561が設けられているので、比較的に温度が高い領域でも、発光装置1の放熱性を十分に向上させることができる。例えば摂氏200度における第1伝熱部材561の熱伝導率は、摂氏25度における間接部材5の熱伝導率よりも高くてもよい。これにより、高温領域での発光装置1の放熱性を十分に向上させることができる。第1伝熱部材561の熱伝導率は、温度上昇に伴って低下する温度依存性を有してもよいものの、その温度の変化量に対する熱伝導率の低下量は、該変化量に対する間接部材5の熱伝導率の低下量よりも小さくてもよい。これによっても、高温領域での発光装置1の放熱性を十分に向上させることができる。 The thermal conductivity of transparent ceramics can have temperature dependence, decreasing as the temperature increases. Figure 18 is a graph schematically illustrating an example of the temperature dependence of the thermal conductivity of sapphire. As shown in Figure 18, the thermal conductivity of sapphire is approximately 41 W/mK at room temperature, but decreases to approximately 20 W/mK at 200 degrees Celsius. Therefore, if a transparent material with such temperature dependence is used for the intermediate member 5, the thermal conductivity of the intermediate member 5 will decrease due to the temperature increase associated with light emission from the wavelength conversion member 4. However, in the ninth embodiment, the first heat transfer member 561 is provided, thereby sufficiently improving the heat dissipation of the light emitting device 1 even in relatively high-temperature regions. For example, the thermal conductivity of the first heat transfer member 561 at 200 degrees Celsius may be higher than the thermal conductivity of the intermediate member 5 at 25 degrees Celsius. This allows the heat dissipation of the light emitting device 1 to be sufficiently improved in high-temperature regions. The thermal conductivity of the first heat transfer member 561 may have temperature dependency, decreasing as the temperature increases, but the decrease in thermal conductivity with respect to the amount of change in temperature may be smaller than the decrease in thermal conductivity of the intermediate member 5 with respect to that amount of change. This also allows the heat dissipation performance of the light emitting device 1 to be sufficiently improved in high-temperature regions.

 また、第1伝熱部材561により発光装置1の放熱性を高めることができるので、間接部材5をより小型化してもよい。例えば間接部材5を薄膜化してもよく、間接部材5の直径を小さくしてもよい。透明セラミック(特にサファイア)は高価であるので、製造コストを低減させることができる。 Furthermore, since the first heat transfer member 561 can improve the heat dissipation performance of the light emitting device 1, the intermediate member 5 can be made even smaller. For example, the intermediate member 5 can be made thinner, or the diameter of the intermediate member 5 can be reduced. Since transparent ceramics (especially sapphire) are expensive, this can reduce manufacturing costs.

 第1伝熱部材561が間接部材5の第2面5bに接合していれば、第1伝熱部材561と間接部材5との間の空隙を低減させることができる。このため、間接部材5と第1伝熱部材561と間の熱抵抗を低減させることができる。したがって、より効果的に熱を間接部材5から第1伝熱部材561に伝達させることができる。第1伝熱部材561が、間接部材5の第2面5bのうち第1開口56a以外の全体と接していれば、さらに効果的に熱を間接部材5から第1放熱部材6に伝達させることができる。 If the first heat transfer member 561 is bonded to the second surface 5b of the intermediate member 5, the gap between the first heat transfer member 561 and the intermediate member 5 can be reduced. This reduces the thermal resistance between the intermediate member 5 and the first heat transfer member 561. Therefore, heat can be more effectively transferred from the intermediate member 5 to the first heat transfer member 561. If the first heat transfer member 561 is in contact with the entire second surface 5b of the intermediate member 5 except for the first opening 56a, heat can be even more effectively transferred from the intermediate member 5 to the first heat dissipation member 6.

 次に、第1伝熱部材561の第1開口56aと第1樹脂部材51との位置関係に一例について述べる。図19は、第1開口56aおよび第1樹脂部材51の位置関係の一例を概略的に示す図である。図19に示されるように、平面視において、第1開口56aの輪郭は第1樹脂部材51の内周縁51aよりも外側に位置してもよい。つまり、第1開口56aの輪郭は第1樹脂部材51の内周縁51aを囲んでいてもよい。第1開口56aの面積は、第1樹脂部材51の内周縁51aで囲まれた面積よりも大きくてもよい。これによれば発光素子3からの励起光をより多く、波長変換部材4に入射させることができる。 Next, an example of the positional relationship between the first opening 56a of the first heat transfer member 561 and the first resin member 51 will be described. Figure 19 is a diagram schematically showing an example of the positional relationship between the first opening 56a and the first resin member 51. As shown in Figure 19, in a plan view, the outline of the first opening 56a may be located outside the inner peripheral edge 51a of the first resin member 51. In other words, the outline of the first opening 56a may surround the inner peripheral edge 51a of the first resin member 51. The area of the first opening 56a may be larger than the area surrounded by the inner peripheral edge 51a of the first resin member 51. This allows more excitation light from the light-emitting element 3 to be incident on the wavelength conversion member 4.

 図19に示されるように、第1開口56aの輪郭は第1樹脂部材51の内周縁51aと外周縁51bとの間に位置していてもよい。この第1開口56aの輪郭は第1伝熱部材561の第2部分572によって形成されるので、第2部分572は平面視において、波長変換部材4の励起光の入射領域の近くに位置することができる。このため、第1伝熱部材561の第2部分572は波長変換部材4の発熱箇所の近傍に位置することができる。したがって、第1伝熱部材561は発熱箇所で生じた熱を効果的に第1放熱部材6に伝達させることができる。 As shown in FIG. 19, the outline of the first opening 56a may be located between the inner peripheral edge 51a and the outer peripheral edge 51b of the first resin member 51. Because the outline of this first opening 56a is formed by the second portion 572 of the first heat transfer member 561, the second portion 572 can be located near the excitation light incidence area of the wavelength conversion member 4 in a planar view. Therefore, the second portion 572 of the first heat transfer member 561 can be located near the heat-generating portion of the wavelength conversion member 4. Therefore, the first heat transfer member 561 can effectively transfer heat generated at the heat-generating portion to the first heat dissipation member 6.

 あるいは、第1開口56aの輪郭は第1樹脂部材51の外周縁51bよりも外側に位置していても構わない。この場合でも、第1伝熱部材561の第2部分572が存在していれば、発光装置1の放熱性を向上させることが可能である。 Alternatively, the outline of the first opening 56a may be located outside the outer peripheral edge 51b of the first resin member 51. Even in this case, the presence of the second portion 572 of the first heat transfer member 561 makes it possible to improve the heat dissipation properties of the light emitting device 1.

 図20は、第9実施形態にかかる発光装置1の構成の第2例を概略的に示す断面図である。第9実施形態の第2例にかかる発光装置1は、第2伝熱部材562の有無という点で、第9実施形態の第1例にかかる発光装置1と相違する。図21は、第9実施形態の第2例にかかる、波長変換部材4、間接部材5、第1伝熱部材561および第2伝熱部材562の構成の一例を概略的に示す斜視図である。 Figure 20 is a cross-sectional view that schematically shows a second example of the configuration of the light-emitting device 1 according to the ninth embodiment. The light-emitting device 1 according to the second example of the ninth embodiment differs from the light-emitting device 1 according to the first example of the ninth embodiment in the presence or absence of the second heat-transfer member 562. Figure 21 is a perspective view that schematically shows an example of the configuration of the wavelength conversion member 4, the intermediate member 5, the first heat-transfer member 561, and the second heat-transfer member 562 according to the second example of the ninth embodiment.

 第2伝熱部材562は第1伝熱部材561とは逆側から間接部材5に接している。つまり、第2伝熱部材562は間接部材5の第1面5aに接している。第2伝熱部材562の熱伝導率は波長変換部材4の熱伝導率よりも高く、また、間接部材5の熱伝導率よりも高い。第2伝熱部材562の熱伝導率は間接部材5の熱伝導率の2倍以上であってもよく、5倍以上であってもよい。 The second heat transfer member 562 contacts the intermediate member 5 from the side opposite to the first heat transfer member 561. In other words, the second heat transfer member 562 contacts the first surface 5a of the intermediate member 5. The thermal conductivity of the second heat transfer member 562 is higher than that of the wavelength conversion member 4, and is also higher than that of the intermediate member 5. The thermal conductivity of the second heat transfer member 562 may be at least twice, or may be at least five times, the thermal conductivity of the intermediate member 5.

 一方、励起光および照明光の少なくともいずれか一方についての第2伝熱部材562の透過率は間接部材5の透過率よりも低くてもよい。励起光および照明光の少なくともいずれか一方についての第2伝熱部材562の透過率は例えば10%以下であってもよく、5%以下であってもよく、2%以下であってもよく、1%以下であってもよい。第2伝熱部材562の透過率が低くてもよいので、第2伝熱部材562の材料の選定自由度を向上させることができる。このため、より熱伝導性の高い材料を第2伝熱部材562に適用することができる。第2伝熱部材562の材料には、第1伝熱部材561の材料として例示された上述の材料のいずれかを適用することができる。第2伝熱部材562は第1伝熱部材561と同じ材料によって形成されてもよい。 On the other hand, the transmittance of the second heat transfer member 562 for at least one of the excitation light and the illumination light may be lower than the transmittance of the intermediate member 5. The transmittance of the second heat transfer member 562 for at least one of the excitation light and the illumination light may be, for example, 10% or less, 5% or less, 2% or less, or 1% or less. Since the transmittance of the second heat transfer member 562 may be low, the degree of freedom in selecting the material of the second heat transfer member 562 can be improved. Therefore, a material with higher thermal conductivity can be used for the second heat transfer member 562. Any of the materials exemplified above as the material of the first heat transfer member 561 can be used as the material of the second heat transfer member 562. The second heat transfer member 562 may be made of the same material as the first heat transfer member 561.

 第2伝熱部材562は平面視において波長変換部材4と隣り合っていてもよい。図20および図21に示されるように、第2伝熱部材562は第2開口56bを有してもよい。第2開口56bの輪郭は波長変換部材4を囲っていてもよい。つまり、第2開口56bの内部には、波長変換部材4が位置してもよい。この場合、第2伝熱部材562のうち第2開口56bを形成する内周面は、波長変換部材4の側面と対向する。これによれば、第2伝熱部材562は波長変換部材4の出射面と対向していないので、波長変換部材4の照明光の出射をほとんど阻害しない。 The second heat transfer member 562 may be adjacent to the wavelength conversion member 4 in a plan view. As shown in Figures 20 and 21, the second heat transfer member 562 may have a second opening 56b. The outline of the second opening 56b may surround the wavelength conversion member 4. In other words, the wavelength conversion member 4 may be located inside the second opening 56b. In this case, the inner surface of the second heat transfer member 562 that forms the second opening 56b faces the side surface of the wavelength conversion member 4. In this way, the second heat transfer member 562 does not face the emission surface of the wavelength conversion member 4, and therefore does not substantially impede the emission of illumination light from the wavelength conversion member 4.

 第2伝熱部材562は板状またはシート状の形状を有していてもよい。第2伝熱部材562の厚さは波長変換部材4の厚さ以下であってもよい。つまり、第2伝熱部材562のうち間接部材5とは逆側の面が、波長変換部材4のうち間接部材5とは逆側の出射面と、面一、もしくは、該出射面よりも間接部材5に近い位置にあってもよい。これによれば、波長変換部材4の出射面から出射された照明光の、第2伝熱部材562への入射を回避することができる。 The second heat transfer member 562 may have a plate or sheet shape. The thickness of the second heat transfer member 562 may be equal to or less than the thickness of the wavelength conversion member 4. In other words, the surface of the second heat transfer member 562 opposite the intermediate member 5 may be flush with the emission surface of the wavelength conversion member 4 opposite the intermediate member 5, or may be located closer to the intermediate member 5 than the emission surface. This makes it possible to prevent illumination light emitted from the emission surface of the wavelength conversion member 4 from entering the second heat transfer member 562.

 以上のように、第9実施形態にかかる第2例では、発光装置1は第2伝熱部材562を含んでいる。第2伝熱部材562は、波長変換部材4で生じた熱を例えば間接部材5を通じて受け取る。第2伝熱部材562は外部に熱を放出することができるので、発光装置1の放熱性をさらに向上させることができる。 As described above, in the second example of the ninth embodiment, the light emitting device 1 includes the second heat transfer member 562. The second heat transfer member 562 receives heat generated in the wavelength conversion member 4, for example, via the intermediate member 5. The second heat transfer member 562 can dissipate heat to the outside, further improving the heat dissipation performance of the light emitting device 1.

 第2伝熱部材562は非接合状態で間接部材5の第1面5aに接していてもよい。あるいは、第2伝熱部材562は間接部材5の第1面5aに接合していてもよい。第2伝熱部材562は例えばメッキ、溶射または塗布により、第1面5aに形成されてもよい。形成方法は第1伝熱部材561と同じであり、第1伝熱部材561と同時に形成されていても良い。この場合、間接部材5の第1伝熱部材561および第2伝熱部材562が接合する部位以外をマスクしてメッキするか、あるいは、間接部材5の全面のメッキ後にレーザ光を金属膜の当該部位に照射して除去すればよい。第2伝熱部材562は、間接部材5の第1面5aに形成された伝熱膜である、ともいえる。第2伝熱部材562が間接部材5の第1面5aに接合していれば、第2伝熱部材562と間接部材5の第1面5aとの間の空隙を低減させることができる。このため、より効果的に熱を間接部材5から第2伝熱部材562に伝達させることができる。 The second heat transfer member 562 may be in contact with the first surface 5a of the indirect member 5 in an unbonded state. Alternatively, the second heat transfer member 562 may be bonded to the first surface 5a of the indirect member 5. The second heat transfer member 562 may be formed on the first surface 5a by, for example, plating, spraying, or coating. The formation method is the same as that of the first heat transfer member 561, and the second heat transfer member 562 may be formed at the same time as the first heat transfer member 561. In this case, plating may be performed while masking areas of the indirect member 5 other than those where the first heat transfer member 561 and the second heat transfer member 562 are bonded, or the entire surface of the indirect member 5 may be plated and then removed by irradiating the relevant areas of the metal film with laser light. The second heat transfer member 562 can also be considered a heat transfer film formed on the first surface 5a of the indirect member 5. If the second heat transfer member 562 is bonded to the first surface 5a of the indirect member 5, the gap between the second heat transfer member 562 and the first surface 5a of the indirect member 5 can be reduced. This allows heat to be transferred more effectively from the intermediate member 5 to the second heat transfer member 562.

 第2伝熱部材562は、間接部材5の第1面5aのうち第2開口56b以外の全体と接していてもよい。これによれば、より効果的に熱を間接部材5から第2伝熱部材562に伝達させることができ、第2伝熱部材562はより効果的に熱を放出することができる。 The second heat transfer member 562 may be in contact with the entire first surface 5a of the intermediate member 5 except for the second opening 56b. This allows heat to be more effectively transferred from the intermediate member 5 to the second heat transfer member 562, and the second heat transfer member 562 can more effectively dissipate heat.

 ところで、波長変換部材4で発した照明光(つまり、蛍光)の一部は間接部材5を透過し、第1伝熱部材561で反射し得る。照明光についての第1伝熱部材561の反射率(最大値)は、例えば、50%以上であってもよく、60%以上であってもよく、70%以上であってもよく、80%以上であってもよく、90%以上であってもよい。そして、反射した照明光が間接部材5を再び透過し、第2伝熱部材562に入射し得る。上述のように、照明光についての第2伝熱部材562の透過率は照明光についての間接部材5の透過率よりも低くてもよい。この場合、照明光は第2伝熱部材562をあまり透過できない。このため、波長変換部材4の出射面以外の領域から照明空間に出射される照明光を低減させることができる。よって、発光装置1はより高精細な照明光を出射することができる。 A portion of the illumination light (i.e., fluorescence) emitted by the wavelength conversion member 4 may pass through the indirect member 5 and be reflected by the first heat transfer member 561. The reflectance (maximum value) of the first heat transfer member 561 for the illumination light may be, for example, 50% or more, 60% or more, 70% or more, 80% or more, or 90% or more. The reflected illumination light may then pass through the indirect member 5 again and be incident on the second heat transfer member 562. As described above, the transmittance of the second heat transfer member 562 for the illumination light may be lower than the transmittance of the indirect member 5 for the illumination light. In this case, the illumination light cannot pass through the second heat transfer member 562 very much. This reduces the illumination light emitted into the illumination space from areas other than the emission surface of the wavelength conversion member 4. This allows the light emitting device 1 to emit higher-definition illumination light.

 波長変換部材4で反射した励起光の一部も第1伝熱部材561で反射し、第2伝熱部材562に入射し得る。励起光についての第2伝熱部材562の透過率は励起光についての間接部材5の透過率よりも低くてもよい。励起光についての第2伝熱部材562の透過率は例えば10%以下であってもよく、5%以下であってもよく、2%以下であってもよく、1%以下であってもよい。この場合には、励起光は第2伝熱部材562をあまり透過できない。このため、波長変換部材4以外の領域から照明空間に出射される励起光を低減させることができる。よって、発光装置1はより高精細な照明光を出射することができる。 A portion of the excitation light reflected by the wavelength conversion member 4 may also be reflected by the first heat transfer member 561 and enter the second heat transfer member 562. The transmittance of the second heat transfer member 562 for excitation light may be lower than the transmittance of the indirect member 5 for excitation light. The transmittance of the second heat transfer member 562 for excitation light may be, for example, 10% or less, 5% or less, 2% or less, or 1% or less. In this case, the excitation light is not able to pass through the second heat transfer member 562 very much. This makes it possible to reduce the excitation light emitted into the illumination space from areas other than the wavelength conversion member 4. This allows the light emitting device 1 to emit illumination light with higher definition.

 図22は、第9実施形態にかかる発光装置1の構成の第3例を概略的に示す断面図である。第9実施形態の第3例にかかる発光装置1は、第3伝熱部材563の有無という点で、第9実施形態の第2例にかかる発光装置1と相違する。 Figure 22 is a cross-sectional view schematically illustrating a third example of the configuration of the light-emitting device 1 according to the ninth embodiment. The light-emitting device 1 according to the third example of the ninth embodiment differs from the light-emitting device 1 according to the second example of the ninth embodiment in the presence or absence of a third heat transfer member 563.

 第3伝熱部材563は第1伝熱部材561の周縁および第2伝熱部材562の周縁を接続している。第3伝熱部材563は第1伝熱部材561の周縁に全周にわたって接続されていてもよく、第2伝熱部材562の周縁に全周にわたって接続されていてもよい。第3伝熱部材563は間接部材5の側面5cに接していてもよく、一例として、間接部材5の側面5cの全周に接していてもよい。 The third heat transfer member 563 connects the periphery of the first heat transfer member 561 and the periphery of the second heat transfer member 562. The third heat transfer member 563 may be connected to the periphery of the first heat transfer member 561 around its entire circumference, or may be connected to the periphery of the second heat transfer member 562 around its entire circumference. The third heat transfer member 563 may be in contact with the side surface 5c of the intermediate member 5, and as an example, may be in contact with the side surface 5c of the intermediate member 5 around its entire circumference.

 第3伝熱部材563の熱伝導率は波長変換部材4の熱伝導率よりも高く、また、間接部材5の熱伝導率よりも高い。第3伝熱部材563の熱伝導率は間接部材5の熱伝導率の2倍以上であってもよく、5倍以上であってもよい。一方、照明光および励起光の少なくともいずれか一方についての第3伝熱部材563の透過率は間接部材5の透過率よりも低くてもよい。照明光および励起光の少なくともいずれか一方についての第3伝熱部材563の透過率は例えば10%以下であってもよく、5%以下であってもよく、2%以下であってもよく、1%以下であってもよい。第3伝熱部材563の透過率が低くてもよいので、第3伝熱部材563の材料の選定自由度を向上させることができる。このため、より熱伝導性の高い材料を第3伝熱部材563に適用することができる。第3伝熱部材563の材料には、第1伝熱部材561の材料として例示された上述の材料のいずれかを適用することができる。第3伝熱部材563は第1伝熱部材561および第2伝熱部材562と同じ材料によって形成されてもよい。 The thermal conductivity of the third heat transfer member 563 is higher than that of the wavelength conversion member 4 and also higher than that of the intermediate member 5. The thermal conductivity of the third heat transfer member 563 may be at least twice, or even five times, that of the intermediate member 5. On the other hand, the transmittance of the third heat transfer member 563 for at least one of the illumination light and the excitation light may be lower than that of the intermediate member 5. The transmittance of the third heat transfer member 563 for at least one of the illumination light and the excitation light may be, for example, 10% or less, 5% or less, 2% or less, or 1% or less. Since the transmittance of the third heat transfer member 563 may be low, the freedom in selecting the material for the third heat transfer member 563 can be improved. Therefore, a material with higher thermal conductivity can be used for the third heat transfer member 563. Any of the materials listed above as examples of the material for the first heat transfer member 561 can be used for the third heat transfer member 563. The third heat transfer member 563 may be made of the same material as the first heat transfer member 561 and the second heat transfer member 562.

 以上のように、第9実施形態にかかる第3例では、発光装置1は第3伝熱部材563を含んでいる。このため、間接部材5から第2伝熱部材562に伝達された熱を、第3伝熱部材563および第1伝熱部材561をこの順に通じて第1放熱部材6に伝達させることができる。したがって、発光装置1の放熱性をさらに向上させることができる。 As described above, in the third example of the ninth embodiment, the light-emitting device 1 includes the third heat-transfer member 563. Therefore, heat transferred from the intermediate member 5 to the second heat-transfer member 562 can be transferred to the first heat-dissipation member 6 via the third heat-transfer member 563 and the first heat-transfer member 561 in this order. This further improves the heat dissipation performance of the light-emitting device 1.

 第3伝熱部材563が間接部材5の側面5cに接していれば、熱が間接部材5の側面5cから第3伝熱部材563および第1伝熱部材561を通じて第1放熱部材6にも伝達される。このため、発光装置1の放熱性をさらに向上させることができる。第3伝熱部材563は非接合状態で間接部材5の側面5cに接してもよい。あるいは、第3伝熱部材563は間接部材5の側面5cに接合していてもよい。これによれば、発光装置1の放熱性をさらに向上させることができる。 If the third heat transfer member 563 is in contact with the side surface 5c of the intermediate member 5, heat is transferred from the side surface 5c of the intermediate member 5 through the third heat transfer member 563 and the first heat transfer member 561 to the first heat dissipation member 6. This further improves the heat dissipation performance of the light emitting device 1. The third heat transfer member 563 may be in contact with the side surface 5c of the intermediate member 5 in an unbonded state. Alternatively, the third heat transfer member 563 may be bonded to the side surface 5c of the intermediate member 5. This further improves the heat dissipation performance of the light emitting device 1.

 第3伝熱部材563が第1伝熱部材561および第2伝熱部材562と同じ材料によって形成されていれば、同一工程で、一体に第1伝熱部材561、第2伝熱部材562および第3伝熱部材563を間接部材5に形成することができる。例えば、メッキ、溶射または塗布により、これらを間接部材5に一体に形成することができる。このため、間接部材5、第1伝熱部材561、第2伝熱部材562および第3伝熱部材563のコストを低減させることができる。この場合、少なくとも間接部材5のうち波長変換部材4が載置される部位および第1開口56aとなる部位をマスクしてメッキするか、あるいは、間接部材5の全面のメッキ後にレーザ光を金属膜の当該部位に照射して除去すればよい。 If the third heat transfer member 563 is made of the same material as the first heat transfer member 561 and the second heat transfer member 562, the first heat transfer member 561, the second heat transfer member 562, and the third heat transfer member 563 can be integrally formed on the indirect member 5 in the same process. For example, these can be formed integrally on the indirect member 5 by plating, spraying, or coating. This reduces the cost of the indirect member 5, the first heat transfer member 561, the second heat transfer member 562, and the third heat transfer member 563. In this case, at least the portion of the indirect member 5 on which the wavelength conversion member 4 is placed and the portion that will become the first opening 56a can be masked and plated, or the entire surface of the indirect member 5 can be plated and then laser light irradiated onto the relevant portions of the metal film to remove them.

 ところで、波長変換部材4で発した照明光(つまり、蛍光)の一部は間接部材5を透過し、第1伝熱部材561で反射し得る。そして、反射した蛍光が間接部材5を再び透過し、第2伝熱部材562で反射し得る。蛍光についての第1伝熱部材561および第2伝熱部材562の各々の反射率(最大値)は、例えば、50%以上であってもよく、60%以上であってもよく、70%以上であってもよく、80%以上であってもよく、90%以上であってもよい。この場合、蛍光は第1伝熱部材561および第2伝熱部材562で反射を繰り返しつつ、間接部材5を側面5cに向かって進む。図23は、蛍光が間接部材5の内部を進む様子の一例を模式的に示す図である。図23の例では、蛍光を模式的に矢印で示している。蛍光は間接部材5の内部を側面5cに向かって進むので、第3伝熱部材563に入射する。 A portion of the illumination light (i.e., fluorescent light) emitted by the wavelength conversion member 4 may pass through the intermediate member 5 and be reflected by the first heat transfer member 561. The reflected fluorescent light may then pass through the intermediate member 5 again and be reflected by the second heat transfer member 562. The reflectance (maximum value) of each of the first heat transfer member 561 and the second heat transfer member 562 for fluorescent light may be, for example, 50% or more, 60% or more, 70% or more, 80% or more, or 90% or more. In this case, the fluorescent light travels through the intermediate member 5 toward the side surface 5c while repeatedly being reflected by the first heat transfer member 561 and the second heat transfer member 562. Figure 23 is a diagram schematically illustrating an example of how fluorescent light travels inside the intermediate member 5. In the example of Figure 23, the fluorescent light is schematically indicated by an arrow. As the fluorescent light travels through the intermediate member 5 toward the side surface 5c, it enters the third heat transfer member 563.

 照明光(つまり、蛍光)についての第3伝熱部材563の透過率(最大値)は、照明光についての間接部材5の透過率(最大値)よりも低くてもよい。照明光についての第3伝熱部材563の透過率は例えば10%以下であってもよく、5%以下であってもよく、2%以下であってもよく、1%以下であってもよい。この場合には、蛍光は第3伝熱部材563をあまり透過できない。このため、間接部材5の側面5cから照明空間に出射される蛍光を低減させることができる。よって、発光装置1はより高精細な照明光を出射することができる。 The transmittance (maximum value) of the third heat transfer member 563 for illumination light (i.e., fluorescent light) may be lower than the transmittance (maximum value) of the indirect member 5 for illumination light. The transmittance of the third heat transfer member 563 for illumination light may be, for example, 10% or less, 5% or less, 2% or less, or 1% or less. In this case, fluorescent light does not pass through the third heat transfer member 563 very well. This makes it possible to reduce the amount of fluorescent light emitted into the illumination space from the side surface 5c of the indirect member 5. This allows the light emitting device 1 to emit illumination light with higher definition.

 蛍光についての第3伝熱部材563の反射率(最大値)は例えば50%以上であってもよく、60%以上であってもよく、70%以上であってもよく、80%以上であってもよく、90%以上であってもよい。この場合、第3伝熱部材563で反射した蛍光の一部は再び波長変換部材4を通じて照明空間に出射され得る。これにより、発光装置1はより高輝度な照明光を出射することができる。 The reflectance (maximum value) of the third heat transfer member 563 for fluorescent light may be, for example, 50% or more, 60% or more, 70% or more, 80% or more, or 90% or more. In this case, a portion of the fluorescent light reflected by the third heat transfer member 563 may be emitted again into the illumination space through the wavelength conversion member 4. This allows the light emitting device 1 to emit illumination light with higher brightness.

 励起光についての第1伝熱部材561および第2伝熱部材562の各々の反射率は、50%以上であってもよく、60%以上であってもよく、70%以上であってもよく、80%以上であってもよく、90%以上であってもよい。この場合、励起光は蛍光と同じく、間接部材5の内部を側面5cに向かって進む。励起光についての第3伝熱部材563の透過率は励起光についての間接部材5の透過率よりも低くてもよい。励起光についての第3伝熱部材563の透過率は例えば10%以下であってもよく、5%以下であってもよく、2%以下であってもよく、1%以下であってもよい。この場合には、励起光は第3伝熱部材563をあまり透過できない。このため、間接部材5の側面5cから照明空間に出射される励起光を低減させることができる。よって、発光装置1はより高精細な照明光を出射することができる。 The reflectance of each of the first heat transfer member 561 and the second heat transfer member 562 for the excitation light may be 50% or more, 60% or more, 70% or more, 80% or more, or 90% or more. In this case, the excitation light, like fluorescent light, travels inside the indirect member 5 toward the side surface 5c. The transmittance of the third heat transfer member 563 for the excitation light may be lower than the transmittance of the indirect member 5 for the excitation light. The transmittance of the third heat transfer member 563 for the excitation light may be, for example, 10% or less, 5% or less, 2% or less, or 1% or less. In this case, the excitation light is not able to pass through the third heat transfer member 563 very much. This makes it possible to reduce the excitation light emitted into the illumination space from the side surface 5c of the indirect member 5. This allows the light-emitting device 1 to emit higher-definition illumination light.

 励起光についての第3伝熱部材563の反射率は例えば50%以上であってもよく、60%以上であってもよく、70%以上であってもよく、80%以上であってもよく、90%以上であってもよい。この場合、第3伝熱部材563で反射した励起光の一部は再び波長変換部材4に入射する。このため、波長変換部材4が発する照明光の輝度を向上させることができる。これにより、発光装置1はより高輝度な照明光を出射することができる。 The reflectivity of the third heat transfer member 563 with respect to the excitation light may be, for example, 50% or more, 60% or more, 70% or more, 80% or more, or 90% or more. In this case, a portion of the excitation light reflected by the third heat transfer member 563 is incident again on the wavelength conversion member 4. This improves the brightness of the illumination light emitted by the wavelength conversion member 4. This allows the light emitting device 1 to emit illumination light with higher brightness.

 ところで上述の例では、発光装置1は第1樹脂部材51を含んでいる。しかしながら、第9実施形態において、発光装置1は第1樹脂部材51を含んでいなくてもよい。図24は、第9実施形態にかかる発光装置1の構成の第4例を概略的に示す断面図である。図24の例では、発光装置1は第1樹脂部材51を含んでいない。第1放熱部材6は平面視において発光素子3と離れていてもよい。第1放熱部材6は導電パターン7とも離れていてもよい。このため、第1放熱部材6が導電性を有していても、第1放熱部材6と発光素子3および導電パターン7の各々との間の絶縁を確保しやすい。その一方で、間接部材5のうち第1放熱部材6と対向しない部分の面積は大きくなる。第9実施形態では、当該部分の少なくとも一部には、第1伝熱部材561の第2部分572が接し、さらに、第2部分572に連続する第1部分571が第1放熱部材6と対向する。このため、間接部材5の当該部分の熱が高熱伝導性の第1伝熱部材561を通じて第1放熱部材6に伝達される。よって、第9実施形態の第4例にかかる発光装置1の放熱性も向上させることができる。 In the above example, the light emitting device 1 includes the first resin member 51. However, in the ninth embodiment, the light emitting device 1 may not include the first resin member 51. Figure 24 is a cross-sectional view schematically showing a fourth example of the configuration of the light emitting device 1 according to the ninth embodiment. In the example of Figure 24, the light emitting device 1 does not include the first resin member 51. The first heat dissipation member 6 may be separated from the light emitting element 3 in a planar view. The first heat dissipation member 6 may also be separated from the conductive pattern 7. Therefore, even if the first heat dissipation member 6 is conductive, it is easy to ensure insulation between the first heat dissipation member 6 and each of the light emitting element 3 and the conductive pattern 7. On the other hand, the area of the portion of the intermediate member 5 that does not face the first heat dissipation member 6 is large. In the ninth embodiment, the second portion 572 of the first heat transfer member 561 contacts at least a portion of this portion, and further, the first portion 571 continuous with the second portion 572 faces the first heat dissipation member 6. As a result, heat from this portion of the intermediate member 5 is transferred to the first heat dissipation member 6 through the highly thermally conductive first heat transfer member 561. This also improves the heat dissipation performance of the light-emitting device 1 according to the fourth example of the ninth embodiment.

 発光装置1が第1樹脂部材51を含まない構造では、第1伝熱部材561の第1開口56aが波長変換部材4の入射領域を規定することができる。第1伝熱部材561の厚さは第1放熱部材6の厚さよりも小さくてもよい。第1伝熱部材561が薄いので、第1開口56aを高い形状精度で第1伝熱部材561に形成することができる。このため、発光装置1はより高い精度の出射径で照明光を出射することができる。 In a structure in which the light emitting device 1 does not include the first resin member 51, the first opening 56a of the first heat transfer member 561 can define the incident area of the wavelength conversion member 4. The thickness of the first heat transfer member 561 may be smaller than the thickness of the first heat dissipation member 6. Because the first heat transfer member 561 is thin, the first opening 56a can be formed in the first heat transfer member 561 with high shape precision. This allows the light emitting device 1 to emit illumination light with a more precise emission diameter.

 第1放熱部材6は平面視において、発光素子3を囲む環状形状を有してもよい。充填材53は環状の第1放熱部材6よりも内側の空間に充填されていてもよい。この構造では、第1放熱部材6はダム材としての機能を発揮する。第1放熱部材6は平面視において素子電極71aおよび素子電極72aを囲っていてもよい。配線71cおよび配線72cは、上述の例とは異なって基板部2を貫通してもよい。 The first heat dissipation member 6 may have an annular shape surrounding the light-emitting element 3 in a plan view. The filler 53 may fill the space inside the annular first heat dissipation member 6. In this structure, the first heat dissipation member 6 functions as a dam material. The first heat dissipation member 6 may surround the element electrodes 71a and 72a in a plan view. The wiring 71c and wiring 72c may pass through the substrate portion 2, unlike the example described above.

 <第10実施形態>
 図25は、第10実施形態にかかる発光装置1の構成の第1例を概略的に示す断面図である。図26は、第10実施形態にかかる発光装置1の構成の第1例を概略的に示す平面図である。第10の実施形態の第1例にかかる発光装置1は、押圧部65の有無という点で、第1実施形態から第9実施形態にかかる発光装置1と相違する。発光装置1は、第9実施形態と同じく、第1伝熱部材561、第2伝熱部材562および第3伝熱部材563を含んでもよい。
Tenth Embodiment
Fig. 25 is a cross-sectional view schematically showing a first example of the configuration of the light-emitting device 1 according to the tenth embodiment. Fig. 26 is a plan view schematically showing a first example of the configuration of the light-emitting device 1 according to the tenth embodiment. The light-emitting device 1 according to the first example of the tenth embodiment differs from the light-emitting devices 1 according to the first to ninth embodiments in the presence or absence of a pressing portion 65. The light-emitting device 1 may include a first heat-transfer member 561, a second heat-transfer member 562, and a third heat-transfer member 563, as in the ninth embodiment.

 押圧部65は間接部材5を第1放熱部材6側に押圧する。これにより、間接部材5と第1放熱部材6との間隔を低減することができる。間接部材5と第1放熱部材6との間に間隔が生じる要因については、後に詳述する。第10実施形態では、間接部材5と第1放熱部材6との間隔を低減させるので、間接部材5と第1放熱部材6との間の熱抵抗を低減させることができる。このため、熱をより効果的に間接部材5から第1放熱部材6に伝達させることができる。 The pressing portion 65 presses the indirect member 5 toward the first heat dissipation member 6. This reduces the gap between the indirect member 5 and the first heat dissipation member 6. The factors that cause the gap between the indirect member 5 and the first heat dissipation member 6 will be described in detail later. In the tenth embodiment, the gap between the indirect member 5 and the first heat dissipation member 6 is reduced, thereby reducing the thermal resistance between the indirect member 5 and the first heat dissipation member 6. This allows heat to be transferred more effectively from the indirect member 5 to the first heat dissipation member 6.

 図25および図26に示されるように、押圧部65は、押圧部材66と、締結部材67とを含んでもよい。押圧部材66は第3部分661および第4部分662を含む。第3部分661は間接部材5に対して第1放熱部材6とは逆側に位置している。つまり、第3部分661は間接部材5の第1面5a側に位置している。第3部分661は基板21の厚さ方向において間接部材5と対向している。第3部分661は間接部材5の第1面5aに接していてもよい。あるいは、間接部材5の第1面5aに第2伝熱部材562が位置する場合、第3部分661は第2伝熱部材562に接していてもよい。第4部分662は平面視において間接部材5よりも外側に位置している(図26参照)。第4部分662は基板21の厚さ方向において間接部材5とは対向しておらず、第1放熱部材6と対向している。第4部分662は第3部分661と接続されている。つまり、第4部分662は第3部分661に連続しており、第3部分661から間接部材5の外側に張り出した状態で位置している。第4部分662には、締結用の貫通穴65aが形成されている。貫通穴65aは基板21の厚さ方向において第4部分662を貫通している。 25 and 26, the pressing portion 65 may include a pressing member 66 and a fastening member 67. The pressing member 66 includes a third portion 661 and a fourth portion 662. The third portion 661 is located on the opposite side of the intermediate member 5 from the first heat dissipation member 6. In other words, the third portion 661 is located on the first surface 5a side of the intermediate member 5. The third portion 661 faces the intermediate member 5 in the thickness direction of the substrate 21. The third portion 661 may be in contact with the first surface 5a of the intermediate member 5. Alternatively, when the second heat transfer member 562 is located on the first surface 5a of the intermediate member 5, the third portion 661 may be in contact with the second heat transfer member 562. The fourth portion 662 is located outside the intermediate member 5 in a planar view (see FIG. 26). The fourth portion 662 does not face the intermediate member 5 in the thickness direction of the substrate 21, but faces the first heat dissipation member 6. The fourth portion 662 is connected to the third portion 661. In other words, the fourth portion 662 is continuous with the third portion 661 and is positioned in a state where it protrudes from the third portion 661 to the outside of the intermediate member 5. A fastening through hole 65a is formed in the fourth portion 662. The through hole 65a penetrates the fourth portion 662 in the thickness direction of the substrate 21.

 締結部材67は、第4部分662に形成された貫通穴65aを通じて、押圧部材66を第1放熱部材6に締結する。具体的な一例として、締結部材67はボルトまたはネジを含んでもよい。つまり、締結部材67はネジ頭671およびネジ部672を含んでもよい(図25参照)。締結部材67は第4部分662の貫通穴65aに挿入される。貫通穴65aの内径はネジ部672の径よりも大きい。図25に示されるように、第1放熱部材6には、貫通穴65aと対向する位置にねじ穴が形成されてもよい。ネジ部672がねじ作用により第1放熱部材6と結合することにより、締結部材67のネジ頭671が押圧部材66を第1放熱部材6側に押圧する。押圧部材66が第1放熱部材6側に押圧されることにより、押圧部材66の第3部分661が間接部材5を第1放熱部材6側に押圧する。 The fastening member 67 fastens the pressing member 66 to the first heat dissipation member 6 through a through hole 65a formed in the fourth portion 662. As a specific example, the fastening member 67 may include a bolt or a screw. That is, the fastening member 67 may include a screw head 671 and a threaded portion 672 (see Figure 25). The fastening member 67 is inserted into the through hole 65a of the fourth portion 662. The inner diameter of the through hole 65a is larger than the diameter of the threaded portion 672. As shown in Figure 25, a threaded hole may be formed in the first heat dissipation member 6 at a position opposite the through hole 65a. The threaded portion 672 is coupled to the first heat dissipation member 6 by screw action, and the screw head 671 of the fastening member 67 presses the pressing member 66 toward the first heat dissipation member 6. When the pressing member 66 is pressed toward the first heat dissipation member 6, the third portion 661 of the pressing member 66 presses the intermediate member 5 toward the first heat dissipation member 6.

 図25の例では、第1放熱部材6にネジ穴が形成されているものの、必ずしもこれに限らない。基板21にネジ穴が形成されてもよく、ネジ部672は基板21とねじ作用により結合してもよい。あるいは、締結部材67はナットを含んでいてもよい。締結部材67は共締めにより、押圧部材66を、第1放熱部材6から基板21までの構成に締結してもよい。 In the example of Figure 25, a screw hole is formed in the first heat dissipation member 6, but this is not necessarily limited to this. A screw hole may also be formed in the substrate 21, and the threaded portion 672 may be connected to the substrate 21 by a screw action. Alternatively, the fastening member 67 may include a nut. The fastening member 67 may also fasten the pressing member 66 to the structure from the first heat dissipation member 6 to the substrate 21 by co-tightening.

 図25および図26に示されるように、発光装置1は複数の押圧部65を含んでもよい。具体的な一例として、発光装置1は2つの押圧部65を含んでもよい。以下では、2つの押圧部65をそれぞれ第1押圧部651および第2押圧部652とも呼ぶ。第1押圧部651の押圧部材66は、基板21の厚さ方向において放熱部材61と対向する位置に配置されてもよく、第2押圧部652の押圧部材66は、基板21の厚さ方向において放熱部材62と対向する位置に配置されてもよい。 As shown in Figures 25 and 26, the light emitting device 1 may include multiple pressing portions 65. As a specific example, the light emitting device 1 may include two pressing portions 65. Hereinafter, the two pressing portions 65 will also be referred to as the first pressing portion 651 and the second pressing portion 652, respectively. The pressing member 66 of the first pressing portion 651 may be positioned opposite the heat dissipation member 61 in the thickness direction of the substrate 21, and the pressing member 66 of the second pressing portion 652 may be positioned opposite the heat dissipation member 62 in the thickness direction of the substrate 21.

 第1押圧部651の押圧部材66は基板21の厚さ方向において間接部材5の第1角部551と対向してもよい。第2押圧部652の押圧部材66は、間接部材5の第1角部551と対角をなす第2角部552と基板21の厚さ方向において対向してもよい。間接部材5の第1角部551は基板21の厚さ方向において放熱部材61と対向していてもよく、間接部材5の第2角部552は基板21の厚さ方向において放熱部材62と対向していてもよい。図26に示されるように、各押圧部材66は平面視において三角形状を有してもよい。具体的には、各押圧部材66は直角三角形状を有してもよい。各押圧部材66は、斜辺以外の2辺がそれぞれ間接部材5の各辺に沿う姿勢で位置していてもよい。 The pressing member 66 of the first pressing portion 651 may face the first corner 551 of the intermediate member 5 in the thickness direction of the substrate 21. The pressing member 66 of the second pressing portion 652 may face the second corner 552 diagonally opposite the first corner 551 of the intermediate member 5 in the thickness direction of the substrate 21. The first corner 551 of the intermediate member 5 may face the heat dissipation member 61 in the thickness direction of the substrate 21, and the second corner 552 of the intermediate member 5 may face the heat dissipation member 62 in the thickness direction of the substrate 21. As shown in FIG. 26 , each pressing member 66 may have a triangular shape in a plan view. Specifically, each pressing member 66 may have a right-angled triangular shape. Each pressing member 66 may be positioned such that the two sides other than the hypotenuse are aligned along the respective sides of the intermediate member 5.

 各押圧部材66には、複数の貫通穴65aが形成されていてもよい。具体的な一例として、各押圧部材66に2つの貫通穴65aが形成されていてもよい。第1押圧部651の2つの貫通穴65aの間には、間接部材5の第1角部551が位置していてもよく、第2押圧部652の2つの貫通穴65aの間には、間接部材5の第2角部552が位置していてもよい。図26に示されるように、各貫通穴65aは、押圧部材66のうち鋭角の角部の近傍に位置してもよい。このように2つの貫通穴65aの間に間接部材5の角部が位置する構造によれば、締結部材67の締結により、押圧部材66はより効果的に間接部材5の角部を第1放熱部材6側に押圧することができる。 Each pressing member 66 may have multiple through holes 65a formed therein. As a specific example, each pressing member 66 may have two through holes 65a formed therein. A first corner 551 of the intermediate member 5 may be located between the two through holes 65a of the first pressing portion 651, and a second corner 552 of the intermediate member 5 may be located between the two through holes 65a of the second pressing portion 652. As shown in FIG. 26 , each through hole 65a may be located near an acute corner of the pressing member 66. With this structure in which the corner of the intermediate member 5 is located between two through holes 65a, the pressing member 66 can more effectively press the corner of the intermediate member 5 toward the first heat dissipation member 6 by fastening the fastening member 67.

 以上のように、第10実施形態によれば、押圧部65が間接部材5を第1放熱部材6側に押圧する。このため、間接部材5と第1放熱部材6との間の熱抵抗を低減させることができる。 As described above, according to the tenth embodiment, the pressing portion 65 presses the intermediate member 5 toward the first heat dissipation member 6. This reduces the thermal resistance between the intermediate member 5 and the first heat dissipation member 6.

 図27は、押圧部65が配置されていない発光装置1の構成の第1具体例を概略的に示す断面図である。第1具体例では、充填材53の一部が第1樹脂部材51と間接部材5との間に介在している。これは、充填材53の量が製造クリアランスの範囲内で第1樹脂部材51の内側の空間に比べて大きくなる場合があるからである。このように充填材53を多めに用いることにより、充填材53はより確実に間接部材5に接合することができる。その一方で、間接部材5と第1放熱部材6との間に隙間が生じる可能性がある。図27の例では該隙間を誇張して示しているものの、実際にはより小さい。この構造によれば、間接部材5の端部は自由端として解放されているので、外部から発光装置1に衝撃されたとしても、衝撃を間接部材5から逃がすことができる。また、間接部材5の熱膨張率と第1放熱部材6の熱膨張率との差があったとしても、第1放熱部材6から間接部材5に印加される熱応力をほとんど回避することができる。また、第2樹脂部材52が位置していない場合には、第2樹脂部材52と間接部材5との接合に起因する熱応力も生じない。一方、該隙間は、間接部材5と第1放熱部材6との間の熱抵抗を増加させる要因となる。 27 is a cross-sectional view schematically illustrating a first specific example of the configuration of a light-emitting device 1 in which a pressing portion 65 is not disposed. In this first specific example, a portion of the filler 53 is interposed between the first resin member 51 and the intermediate member 5. This is because the amount of filler 53 may be larger than the space inside the first resin member 51 within the manufacturing clearance range. By using a larger amount of filler 53 in this way, the filler 53 can be more securely bonded to the intermediate member 5. On the other hand, a gap may occur between the intermediate member 5 and the first heat dissipation member 6. Although the gap is exaggerated in the example of FIG. 27, it is actually smaller. With this structure, the end of the intermediate member 5 is open as a free end, so even if the light-emitting device 1 is subjected to an external impact, the impact can be dissipated from the intermediate member 5. Furthermore, even if there is a difference in the thermal expansion coefficient between the intermediate member 5 and the first heat dissipation member 6, thermal stress applied from the first heat dissipation member 6 to the intermediate member 5 can be almost completely avoided. Furthermore, when the second resin member 52 is not present, thermal stress caused by bonding between the second resin member 52 and the intermediate member 5 does not occur. However, this gap increases the thermal resistance between the intermediate member 5 and the first heat dissipation member 6.

 図28は、押圧部65が配置されていない発光装置1の構成の第2具体例を概略的に示す断面図である。第2具体例では、第1樹脂部材51の一部が第1放熱部材6の第1面6aよりも波長変換部材4側に位置している。これは、第1樹脂部材51の量が製造クリアランスの範囲内で、比較的に多く用いられる場合があるからである。この場合も、間接部材5と第1放熱部材6との間に隙間が生じている。図28の例でも、該隙間は誇張して示されている。図28の構造においても、発光装置1は衝撃を間接部材5から逃がすことができ、間接部材5に生じる熱応力を低減させることができる。一方、該隙間は熱抵抗の増加要因となる。 Figure 28 is a cross-sectional view schematically showing a second specific example of the configuration of a light-emitting device 1 in which a pressing portion 65 is not arranged. In this second specific example, a portion of the first resin member 51 is located closer to the wavelength conversion member 4 than the first surface 6a of the first heat dissipation member 6. This is because a relatively large amount of the first resin member 51 may be used within the manufacturing clearance range. In this case, too, a gap is created between the intermediate member 5 and the first heat dissipation member 6. In the example of Figure 28, this gap is also exaggerated. With the structure of Figure 28, the light-emitting device 1 can also dissipate impacts from the intermediate member 5, reducing thermal stress generated in the intermediate member 5. However, this gap increases thermal resistance.

 図29は、押圧部65が配置されていない発光装置1の構成の第3具体例を概略的に示す断面図である。第3具体例では、第2樹脂部材52の一部が間接部材5と第1放熱部材6の間に介在している。これは、第2樹脂部材52の量が製造クリアランスの範囲内で、比較的に多く用いられる場合があるからである。このように第2樹脂部材52を多めに用いることにより、第2樹脂部材52はより確実に間接部材5に接合することができる。その一方、第1放熱部材6よりも熱伝導率が低い第2樹脂部材52の一部が間接部材5と第1放熱部材6との間に介在するので、間接部材5と第1放熱部材6との間の熱抵抗は比較的に大きくなる。図29の例では、第2樹脂部材52は間接部材5と第1放熱部材6との間の一部に介在するので、間接部材5と第1放熱部材6との間には隙間も生じている。図29の例でも、該隙間は誇張して示されている。この構造によれば、間接部材5からの第1放熱部材6へ至る経路における熱抵抗を低減させることができるので、図27および図28の構造に比べて光学発光装置1の放熱性を高めることができる。しかも、間接部材5が剥離しにくい。一方、該隙間は熱抵抗の増加要因となる。 29 is a cross-sectional view schematically illustrating a third specific example of the configuration of a light-emitting device 1 in which a pressing portion 65 is not disposed. In the third specific example, a portion of the second resin member 52 is interposed between the intermediate member 5 and the first heat dissipation member 6. This is because a relatively large amount of the second resin member 52 may be used within the manufacturing clearance range. By using a larger amount of the second resin member 52 in this manner, the second resin member 52 can be more securely bonded to the intermediate member 5. On the other hand, since a portion of the second resin member 52, which has a lower thermal conductivity than the first heat dissipation member 6, is interposed between the intermediate member 5 and the first heat dissipation member 6, the thermal resistance between the intermediate member 5 and the first heat dissipation member 6 becomes relatively large. In the example of FIG. 29, the second resin member 52 is interposed between the intermediate member 5 and the first heat dissipation member 6, resulting in a gap between the intermediate member 5 and the first heat dissipation member 6. In the example of FIG. 29, the gap is also exaggerated. This structure reduces the thermal resistance in the path from the intermediate member 5 to the first heat dissipation member 6, thereby improving the heat dissipation performance of the optical light-emitting device 1 compared to the structures shown in Figures 27 and 28. Furthermore, the intermediate member 5 is less likely to peel off. However, this gap increases the thermal resistance.

 これに対して、第10実施形態では、押圧部65が間接部材5を第1放熱部材6側に押圧する。これにより、例えば間接部材5と第1放熱部材6との隙間を低減させることができる。あるいは、間接部材5と第1放熱部材6との間の第2樹脂部材52の厚さを低減させることができる。したがって、間接部材5と第1放熱部材6との間の熱抵抗を低減させることができる。 In contrast, in the tenth embodiment, the pressing portion 65 presses the indirect member 5 toward the first heat dissipation member 6. This makes it possible to reduce the gap between the indirect member 5 and the first heat dissipation member 6, for example. Alternatively, it is possible to reduce the thickness of the second resin member 52 between the indirect member 5 and the first heat dissipation member 6. Therefore, it is possible to reduce the thermal resistance between the indirect member 5 and the first heat dissipation member 6.

 押圧部65は、発光装置1の製造時において、次に説明するタイミングで第1放熱部材6に取り付けられてもよい。まず、固化前の充填材53である充填液を固化後の第1樹脂部材51の内側の空間に塗布した後に、波長変換部材4が取り付けられた間接部材5を、第1樹脂部材51および第1放熱部材6の上に配置する。次に、押圧部65を間接部材5および第1放熱部材6に対して取り付ける。これにより、間接部材5が第1放熱部材6側に押圧され、間接部材5と第1放熱部材6との間隔が低減する。このとき、充填液も間接部材5によって押圧され得る。この押圧により、充填液は第1樹脂部材51の内側の空間内で広がる。このため、該空間内の空隙が低減する。また、充填材が間接部材5と第1樹脂部材51との間にはみ出し得る。次に、押圧部65が取り付けられた状態で、充填液を固化させる。つまり、間接部材5と第1放熱部材6との間隔が低減された状態で、充填液が固化されて充填材53が形成される。 The pressing portion 65 may be attached to the first heat dissipation member 6 at the timing described below during the manufacture of the light emitting device 1. First, the filling liquid, which is the filler material 53 before solidification, is applied to the space inside the solidified first resin member 51, and then the intermediate member 5 with the wavelength conversion member 4 attached is placed on top of the first resin member 51 and the first heat dissipation member 6. Next, the pressing portion 65 is attached to the intermediate member 5 and the first heat dissipation member 6. This presses the intermediate member 5 toward the first heat dissipation member 6, reducing the gap between the intermediate member 5 and the first heat dissipation member 6. At this time, the filling liquid may also be pressed by the intermediate member 5. This pressure causes the filling liquid to spread within the space inside the first resin member 51. This reduces the void within the space. Furthermore, the filling material may overflow between the intermediate member 5 and the first resin member 51. Next, with the pressing portion 65 attached, the filling liquid is solidified. In other words, the filling liquid solidifies and forms the filler material 53 while the gap between the intermediate member 5 and the first heat dissipation member 6 is reduced.

 以上のように、間接部材5を充填材53により確実に接合させつつ、間接部材5と第1放熱部材6との間隔を低減させることができる。よって、間接部材5と第1放熱部材6との間の熱抵抗を低減させることができる。 As described above, the intermediate member 5 can be reliably joined by the filler 53 while reducing the gap between the intermediate member 5 and the first heat dissipation member 6. This reduces the thermal resistance between the intermediate member 5 and the first heat dissipation member 6.

 発光装置1が第2樹脂部材52を含む場合には、次に説明するタイミングで押圧部65を取り付けてもよい。まず、固化前の充填材53である充填液を固化後の第1樹脂部材51の内側の空間に塗布し、固化前の第2樹脂部材52である樹脂液を固化後の第1樹脂部材51と第1放熱部材6との間に塗布する。次に、波長変換部材4が取り付けられた間接部材5を、第1樹脂部材51および第1放熱部材6の上に配置する。次に、押圧部65を間接部材5および第1放熱部材6に対して取り付ける。これにより、間接部材5が第1放熱部材6側に押圧される。このとき、充填液は間接部材5によって押圧されてもよく、間接部材5と第1樹脂部材51との間にはみ出てもよい。同様に、樹脂液は間接部材5によって押圧されてもよく、間接部材5と第1放熱部材6との間にはみ出てもよい。間接部材5は第1放熱部材6側に押圧されているので、間接部材5と第1放熱部材6との間隔は低減される。このため、樹脂液は間接部材5と第1放熱部材6との間で薄く広がる。次に、押圧部65が取り付けられた状態で、充填液および樹脂液を固化させる。 If the light emitting device 1 includes the second resin member 52, the pressing portion 65 may be attached at the timing described below. First, a filling liquid, which is the filler material 53 before solidification, is applied to the space inside the solidified first resin member 51, and a resin liquid, which is the second resin member 52 before solidification, is applied between the solidified first resin member 51 and the first heat dissipation member 6. Next, the indirect member 5 with the wavelength conversion member 4 attached is placed on top of the first resin member 51 and the first heat dissipation member 6. Next, the pressing portion 65 is attached to the indirect member 5 and the first heat dissipation member 6. This presses the indirect member 5 toward the first heat dissipation member 6. At this time, the filling liquid may be pressed by the indirect member 5 or may spill out between the indirect member 5 and the first resin member 51. Similarly, the resin liquid may be pressed by the indirect member 5 or may spill out between the indirect member 5 and the first heat dissipation member 6. Because the intermediate member 5 is pressed toward the first heat dissipation member 6, the gap between the intermediate member 5 and the first heat dissipation member 6 is reduced. As a result, the resin liquid spreads thinly between the intermediate member 5 and the first heat dissipation member 6. Next, with the pressing portion 65 attached, the filling liquid and resin liquid are solidified.

 以上のように、間接部材5を充填材53および第2樹脂部材52により確実に接合させつつ、間接部材5と第1放熱部材6との間隔を低減させることができる。つまり、第2樹脂部材52の厚さを低減させることができる。しかも、樹脂液は間接部材5と第1放熱部材6との間で薄く広がるので、間接部材5と第1放熱部材6との間の隙間をより確実に低減させることができる。したがって、間接部材5と第1放熱部材6との間の熱抵抗をより確実に低減させることができる。 As described above, the intermediate member 5 can be reliably bonded by the filler 53 and the second resin member 52, while the gap between the intermediate member 5 and the first heat dissipation member 6 can be reduced. In other words, the thickness of the second resin member 52 can be reduced. Furthermore, because the resin liquid spreads thinly between the intermediate member 5 and the first heat dissipation member 6, the gap between the intermediate member 5 and the first heat dissipation member 6 can be more reliably reduced. Therefore, the thermal resistance between the intermediate member 5 and the first heat dissipation member 6 can be more reliably reduced.

 また、上述の例では、押圧部65は押圧部材66および締結部材67を含んでいる。これによれば、より簡易な構造で、押圧部材66を第1放熱部材6に取り付けつつ、押圧部材66で間接部材5を第1放熱部材6側に押圧することができる。 Furthermore, in the above example, the pressing portion 65 includes a pressing member 66 and a fastening member 67. This allows the pressing member 66 to be attached to the first heat dissipation member 6 with a simpler structure, while pressing the indirect member 5 toward the first heat dissipation member 6.

 次に、押圧部65の伝熱性について述べる。押圧部65の押圧部材66の熱伝導率は波長変換部材4の熱伝導率よりも高くてもよく、また、間接部材5の熱伝導率よりも高くてもよい。例えば、押圧部材66は、金属およびセラミックの少なくともいずれか一つによって形成される。金属には、例えば、銀、銅、金、アルミニウム、亜鉛、クロム、ニッケルまたは錫、あるいは、これらの少なくとも1つを含む合金が適用され得る。セラミックには、例えば、炭化珪素または窒化アルミニウムが適用される。 Next, the thermal conductivity of the pressing portion 65 will be described. The thermal conductivity of the pressing member 66 of the pressing portion 65 may be higher than that of the wavelength conversion member 4, and may also be higher than that of the intermediate member 5. For example, the pressing member 66 is formed from at least one of a metal and a ceramic. Examples of metals that can be used include silver, copper, gold, aluminum, zinc, chromium, nickel, or tin, or an alloy containing at least one of these. Examples of ceramics that can be used include silicon carbide or aluminum nitride.

 締結部材67の熱伝導率は、波長変換部材4の熱伝導率よりも高くてもよく、また、間接部材5の熱伝導率よりも高くてもよい。例えば、締結部材67は、金属およびセラミックの少なくともいずれか一つによって形成される。金属には、鉄、銀、銅、金、アルミニウム、亜鉛、クロム、ニッケルまたは錫、あるいは、これらの少なくとも1つ以上を含む合金(例えばステンレス鋼)が適用され得る。セラミックには、例えば、炭化珪素または窒化アルミニウムが適用される。 The thermal conductivity of the fastening member 67 may be higher than that of the wavelength conversion member 4, and may also be higher than that of the intermediate member 5. For example, the fastening member 67 is made of at least one of a metal and a ceramic. Examples of metals that can be used include iron, silver, copper, gold, aluminum, zinc, chromium, nickel, and tin, as well as alloys containing at least one of these (e.g., stainless steel). Examples of ceramics that can be used include silicon carbide and aluminum nitride.

 以上のように、押圧部材66の熱伝導率が高い場合には、押圧部材66は間接部材5から受け取った熱をより効果的に外部に放出することができる。また、押圧部材66から第1放熱部材6に熱を伝達させることもできる。例えば、押圧部材66から締結部材67を通じて第1放熱部材6に熱を伝達させることもできる。このため、発光装置1の放熱性をさらに向上させることができる。 As described above, when the thermal conductivity of the pressing member 66 is high, the pressing member 66 can more effectively dissipate the heat received from the intermediate member 5 to the outside. It is also possible to transfer heat from the pressing member 66 to the first heat dissipation member 6. For example, it is also possible to transfer heat from the pressing member 66 to the first heat dissipation member 6 via the fastening member 67. This further improves the heat dissipation performance of the light emitting device 1.

 次に、第4部分662の形状について述べる。図25に示されるように、押圧部材66の第4部分662の一部は、第3部分661よりも第1放熱部材6側に位置していてもよい。つまり、第4部分662は第3部分661よりも第1放熱部材6側に突出した状態で位置している。第4部分662の第3部分661からの突出量は間接部材5の厚さ以下である。これによれば、第4部分662の当該一部は、基板21の第1面に平行な方向において、間接部材5の側面5cの少なくとも一部と対向する。第4部分662は、間接部材5の側面5cの少なくとも一部を覆っていてもよい。つまり、第4部分662は、間接部材5の側面5cを外側から部分的に覆っていてもよい。間接部材5の側面5cは、一部が第4部分662に覆われていてもよいし、一部が露出していてもよい。例えば間接部材5が角板状の部材であるとき、第4部分662は間接部材5の角部の側面を覆っていてもよいし、第4部分662は間接部材5の各角部以外を覆っていてもよい。 Next, the shape of the fourth portion 662 will be described. As shown in FIG. 25, a portion of the fourth portion 662 of the pressing member 66 may be located closer to the first heat dissipation member 6 than the third portion 661. In other words, the fourth portion 662 is located in a state where it protrudes closer to the first heat dissipation member 6 than the third portion 661. The amount by which the fourth portion 662 protrudes from the third portion 661 is equal to or less than the thickness of the intermediate member 5. As a result, the portion of the fourth portion 662 faces at least a portion of the side surface 5c of the intermediate member 5 in a direction parallel to the first surface of the substrate 21. The fourth portion 662 may cover at least a portion of the side surface 5c of the intermediate member 5. In other words, the fourth portion 662 may partially cover the side surface 5c of the intermediate member 5 from the outside. The side surface 5c of the intermediate member 5 may be partially covered by the fourth portion 662, or may be partially exposed. For example, when the intermediate member 5 is a rectangular plate-shaped member, the fourth portion 662 may cover the side surface of the corner of the intermediate member 5, or the fourth portion 662 may cover the entire intermediate member 5 other than the corners.

 この構造によれば、押圧部材66の第4部分662と第1放熱部材6との間隔を低減させることができる。このため、押圧部材66と第1放熱部材6との間の熱抵抗を低減させることができる。したがって、間接部材5からの熱を、押圧部材66を通じて、より効果的に第1放熱部材6に伝達させることができる。なお、締結部材67が取り付けられた状態において、第4部分662は第1放熱部材6の第1面6aに接していてもよい。 This structure allows the distance between the fourth portion 662 of the pressing member 66 and the first heat dissipation member 6 to be reduced. This reduces the thermal resistance between the pressing member 66 and the first heat dissipation member 6. This allows heat from the intermediate member 5 to be more effectively transferred to the first heat dissipation member 6 through the pressing member 66. Note that when the fastening member 67 is attached, the fourth portion 662 may be in contact with the first surface 6a of the first heat dissipation member 6.

 以下では、第4部分662のうち間接部材5の側面5cと対向する面を、対向面とも呼ぶ。 Hereinafter, the surface of the fourth portion 662 that faces the side surface 5c of the indirect member 5 will also be referred to as the "facing surface."

 間接部材5の側面5cから出射された蛍光および励起光は第4部分662の対向面に入射する。蛍光および励起光の少なくともいずれか一方についての第4部分662の透過率は、間接部材5の透過率よりも低くてもよい。例えば、蛍光および励起光の少なくともいずれか一方についての第4部分662の透過率は10%以下であってもよく、5%以下であってもよく、2%以下であってもよく、1%以下であってもよい。これによれば、蛍光および励起光の少なくともいずれか一方は押圧部材66の第4部分662をあまり透過できない。このため、間接部材5の側面5cから照明空間へ出射される蛍光または励起光を低減させることができる。このため、発光装置1はより高精細な照明光を出射することができる。 The fluorescence and excitation light emitted from the side surface 5c of the intermediate member 5 are incident on the opposing surface of the fourth portion 662. The transmittance of the fourth portion 662 for at least one of the fluorescence and excitation light may be lower than the transmittance of the intermediate member 5. For example, the transmittance of the fourth portion 662 for at least one of the fluorescence and excitation light may be 10% or less, 5% or less, 2% or less, or 1% or less. This prevents at least one of the fluorescence and excitation light from passing through the fourth portion 662 of the pressing member 66 to a large extent. This reduces the amount of fluorescence or excitation light emitted from the side surface 5c of the intermediate member 5 into the illumination space. This allows the light-emitting device 1 to emit illumination light with higher definition.

 蛍光および励起光の少なくともいずれか一方は第4部分662に吸収されてもよい。例えば、第4部分662が黒色の炭化珪素によって形成されてもよい。あるいは、蛍光および励起光の少なくともいずれか一方は第4部分662で反射してもよい。例えば、蛍光および励起光の少なくともいずれか一方についての第4部分662の反射率は、50%以上であってもよく、60%以上であってもよく、70%以上であってもよく、80%以上であってもよく、90%以上であってもよい。押圧部材66の材料として例示された上述の素材は、蛍光および励起光についての高い反射率を有する。押圧部材66としてアルミニウムが適用される場合、第4部分662にアルマイト処理が行われてもよい。第4部分662の対向面で反射した蛍光および励起光の少なくともいずれか一方は、間接部材5を通じて再び波長変換部材4に入射し得る。このため、発光装置1はより高輝度な照明光を出射することができる。 At least one of the fluorescence and the excitation light may be absorbed by the fourth portion 662. For example, the fourth portion 662 may be formed of black silicon carbide. Alternatively, at least one of the fluorescence and the excitation light may be reflected by the fourth portion 662. For example, the reflectance of the fourth portion 662 for at least one of the fluorescence and the excitation light may be 50% or more, 60% or more, 70% or more, 80% or more, or 90% or more. The above-mentioned materials exemplified as materials for the pressing member 66 have high reflectance for the fluorescence and the excitation light. When aluminum is used for the pressing member 66, the fourth portion 662 may be anodized. At least one of the fluorescence and the excitation light reflected by the opposing surface of the fourth portion 662 may be incident on the wavelength conversion member 4 again through the indirect member 5. This allows the light emitting device 1 to emit illumination light with higher brightness.

 図30は、第10実施形態にかかる発光装置1の構成の第2例を概略的に示す平面図である。第10実施形態の第2例にかかる発光装置1は、押圧部65の押圧部材66の構成という点で、第10実施形態の第1例にかかる発光装置1と相違する。図30に示されるように、押圧部材66は平面視において環状形状を有していてもよい。押圧部材66は平面視において波長変換部材4を囲んでいてもよい。つまり、押圧部材66の内周面が波長変換部材4の側面を囲んでいてもよい。押圧部材66は円環形状を有していてもよく、波長変換部材4は円板形状を有していてもよい。押圧部材66の内径(直径)は波長変換部材4の直径以上であってもよい。 Figure 30 is a plan view schematically showing a second example of the configuration of the light emitting device 1 according to the tenth embodiment. The light emitting device 1 according to the second example of the tenth embodiment differs from the light emitting device 1 according to the first example of the tenth embodiment in the configuration of the pressing member 66 of the pressing portion 65. As shown in Figure 30, the pressing member 66 may have an annular shape in plan view. The pressing member 66 may surround the wavelength conversion member 4 in plan view. In other words, the inner surface of the pressing member 66 may surround the side surface of the wavelength conversion member 4. The pressing member 66 may have an annular shape, and the wavelength conversion member 4 may have a disk shape. The inner diameter (diameter) of the pressing member 66 may be equal to or greater than the diameter of the wavelength conversion member 4.

 押圧部材66は第3部分661および第4部分662を含んでいる。第3部分661は間接部材5と対向しており、第4部分662は間接部材5の外側において第1放熱部材6と対向している。図30に示されるように、第3部分661は環状形状を有していてもよい。つまり、第3部分661は、波長変換部材4のまわりの全周にわたって、間接部材5と対向していてもよい。例えば、押圧部材66の内径(直径)は間接部材5の一辺よりも短く、押圧部材66の外径(直径)は間接部材5の一辺よりも長くてもよい。この場合、第3部分661は環状形状を有する。一方で、第4部分662は複数に分離される。図30の例では、4つの第4部分662が間接部材5の外側に位置している。各第4部分662は平面視において弓形形状を有していてもよい。 The pressing member 66 includes a third portion 661 and a fourth portion 662. The third portion 661 faces the intermediate member 5, and the fourth portion 662 faces the first heat dissipation member 6 outside the intermediate member 5. As shown in FIG. 30, the third portion 661 may have an annular shape. That is, the third portion 661 may face the intermediate member 5 over the entire circumference of the wavelength conversion member 4. For example, the inner diameter (diameter) of the pressing member 66 may be shorter than one side of the intermediate member 5, and the outer diameter (diameter) of the pressing member 66 may be longer than one side of the intermediate member 5. In this case, the third portion 661 has an annular shape. On the other hand, the fourth portion 662 is separated into multiple portions. In the example of FIG. 30, four fourth portions 662 are located outside the intermediate member 5. Each fourth portion 662 may have an arch-shaped shape in a plan view.

 一方、図30とは相違するものの、押圧部材66の内径は間接部材5の一辺よりも長くてもよく、かつ、間接部材5の対角線よりも短くてもよい。この場合、複数の第3部分661が間接部材5の複数の角部とそれぞれ対向する。これによれば、押圧部材66の内径が比較的に大きいので、波長変換部材4の直径を大きくすることができる。押圧部材66の外径は間接部材5の対角線よりも長くてもよい。この場合、第4部分662は環状形状を有する。つまり、第4部分662は間接部材5のまわりで全周にわたって、間接部材5の外側に位置する。 On the other hand, although different from Figure 30, the inner diameter of the pressing member 66 may be longer than one side of the indirect member 5 and shorter than the diagonal of the indirect member 5. In this case, the multiple third portions 661 face the multiple corners of the indirect member 5, respectively. As a result, the inner diameter of the pressing member 66 is relatively large, and the diameter of the wavelength conversion member 4 can be made large. The outer diameter of the pressing member 66 may be longer than the diagonal of the indirect member 5. In this case, the fourth portion 662 has an annular shape. In other words, the fourth portion 662 is located outside the indirect member 5 all around the circumference.

 図30に示されるように、締結部材67が間接部材5の辺に対して一対一で取り付けられてもよい。締結部材67は平面視において間接部材5の各辺の中央部と隣り合う位置に取り付けられてもよい。これによれば、締結部材67の締結により、押圧部材66がより均等に間接部材5を第1放熱部材6側に押圧することができる。 As shown in FIG. 30, the fastening members 67 may be attached one-to-one to the sides of the indirect member 5. The fastening members 67 may be attached to positions adjacent to the center of each side of the indirect member 5 in a plan view. In this way, by fastening the fastening members 67, the pressing member 66 can press the indirect member 5 more evenly toward the first heat dissipation member 6.

 第10実施形態の第2例によれば、押圧部材66の第3部分661はより大きな面積で間接部材5に接している。例えば、押圧部材66は間接部材5の全ての角部を押圧することができる。このため、間接部材5からの熱を、押圧部材66を通じて外部または第1放熱部材6により効果的に伝達させることができる。したがって、発光装置1の放熱性をさらに向上させることができる。 According to the second example of the tenth embodiment, the third portion 661 of the pressing member 66 is in contact with the intermediate member 5 over a larger area. For example, the pressing member 66 can press all corners of the intermediate member 5. This allows heat from the intermediate member 5 to be effectively transferred to the outside or to the first heat dissipation member 6 through the pressing member 66. This further improves the heat dissipation performance of the light-emitting device 1.

 なお、押圧部材66の第3部分661の厚さは波長変換部材4の厚さよりも小さくてもよいものの、大きくてもよい。第3部分661が波長変換部材4よりも厚い場合には、押圧部材66は熱を外部により効果的に放出することができる。第3部分661は第1放熱部材6よりも厚くてもよく、基板21よりも厚くてもよい。 The thickness of the third portion 661 of the pressing member 66 may be smaller than the thickness of the wavelength conversion member 4, but may also be larger. If the third portion 661 is thicker than the wavelength conversion member 4, the pressing member 66 can more effectively release heat to the outside. The third portion 661 may be thicker than the first heat dissipation member 6 and may also be thicker than the substrate 21.

 <第11実施形態>
 図31は、第11実施形態にかかる照明装置10の構成の第1例を概略的に示す斜視図である。第11実施形態の第1例にかかる照明装置10は、押圧部65の有無という点で、第3実施形態にかかる照明装置10と相違する。また、第11実施形態では、発光装置1は間接部材5を含んでいる。
Eleventh Embodiment
31 is a perspective view schematically illustrating a first example of the configuration of the lighting device 10 according to the eleventh embodiment. The lighting device 10 according to the first example of the eleventh embodiment differs from the lighting device 10 according to the third embodiment in the presence or absence of a pressing portion 65. In the eleventh embodiment, the light-emitting device 1 includes an indirect member 5.

 第11実施形態では、第2放熱部材91は押圧部65としても機能する。具体的には、第2放熱部材91は押圧部材66を有している。図31に示されるように、第2放熱部材91の一部は基板21の厚さ方向において間接部材5の一部と対向しており、押圧部材66の第3部分661として機能する。第2放熱部材91は、第10実施形態の第1例と同じく、複数の第3部分661を含んでもよい。具体的な一例として、第1放熱部材6は2つの第3部分661を含んでもよい。一つの第3部分661は間接部材5の第1角部551と対向してもよく、もう一つの第3部分661は間接部材5の第2角部552と対向してもよい。 In the eleventh embodiment, the second heat dissipation member 91 also functions as a pressing portion 65. Specifically, the second heat dissipation member 91 has a pressing member 66. As shown in FIG. 31 , a portion of the second heat dissipation member 91 faces a portion of the intermediate member 5 in the thickness direction of the substrate 21, and functions as a third portion 661 of the pressing member 66. As in the first example of the tenth embodiment, the second heat dissipation member 91 may include multiple third portions 661. As a specific example, the first heat dissipation member 6 may include two third portions 661. One third portion 661 may face the first corner portion 551 of the intermediate member 5, and the other third portion 661 may face the second corner portion 552 of the intermediate member 5.

 図31に示されるように、第3部分661は第2放熱部材91の開口91aの輪郭の一部を形成してもよい。第2放熱部材91の開口91aは、間接部材5の第3角部553および第4角部554を結ぶ対角線に沿って延びた形状を有してもよい。開口91aは、該対角線に沿う方向に長い長穴であってもよい。第2放熱部材91は、基板21の厚さ方向において間接部材5の第3角部553および第4角部554には対向していなくてもよい。つまり、平面視において、間接部材5の第3角部553および第4角部554は開口91aの内部に位置していてもよい。 As shown in FIG. 31 , the third portion 661 may form part of the outline of the opening 91a of the second heat dissipation member 91. The opening 91a of the second heat dissipation member 91 may have a shape that extends along a diagonal line connecting the third corner 553 and the fourth corner 554 of the intermediate member 5. The opening 91a may be an elongated hole that is long in the direction along the diagonal line. The second heat dissipation member 91 does not have to face the third corner 553 and the fourth corner 554 of the intermediate member 5 in the thickness direction of the board 21. In other words, in a plan view, the third corner 553 and the fourth corner 554 of the intermediate member 5 may be located inside the opening 91a.

 図31から理解できるように、第2放熱部材91の一部は間接部材5の外側で、基板21の厚さ方向において第1放熱部材6と対向しており、押圧部材66の第4部分662として機能する。第10実施形態の第1例と同じく、第2放熱部材91は複数の第4部分662を含んでいてもよい。具体的な一例として、第2放熱部材91は2つの第4部分662を含んでいてもよい。一つの第4部分662は放熱部材61と対向してもよく、もう一つの第4部分662は放熱部材62と対向してもよい。 As can be seen from FIG. 31, a portion of the second heat dissipation member 91 faces the first heat dissipation member 6 outside the intermediate member 5 in the thickness direction of the substrate 21, and functions as the fourth portion 662 of the pressing member 66. As with the first example of the tenth embodiment, the second heat dissipation member 91 may include multiple fourth portions 662. As a specific example, the second heat dissipation member 91 may include two fourth portions 662. One fourth portion 662 may face the heat dissipation member 61, and the other fourth portion 662 may face the heat dissipation member 62.

 第2放熱部材91の第4部分662には、締結部材67によって貫通される貫通穴65aが形成されている。第10実施形態の第1例と同じく、各第4部分662には複数の貫通穴65aが形成されてもよい。具体的な一例として、各第4部分662には2つの貫通穴65aが形成されてもよい。第10実施形態の第1例と同じく、各第4部分662において、2つの貫通穴65aの間に間接部材5の各角部が位置してもよい。 A through hole 65a is formed in the fourth portion 662 of the second heat dissipation member 91, and is penetrated by a fastening member 67. As in the first example of the tenth embodiment, multiple through holes 65a may be formed in each fourth portion 662. As a specific example, two through holes 65a may be formed in each fourth portion 662. As in the first example of the tenth embodiment, each corner of the intermediate member 5 may be located between two through holes 65a in each fourth portion 662.

 締結部材67の締結により、第2放熱部材91が第1放熱部材6側に押圧されるので、第2放熱部材91の第3部分661が間接部材5を第1放熱部材6側に押圧する。このため、間接部材5と第1放熱部材6との間の熱抵抗を低減させることができる。また、第2放熱部材91の第4部分662と第1放熱部材6との熱抵抗も低減させることができる。また、押圧により、第2放熱部材91の第3部分661と間接部材5との熱抵抗も低減させることもできる。したがって、熱をより効果的に間接部材5から第1放熱部材6および第2放熱部材91の各々に伝達させることができる。 By fastening the fastening member 67, the second heat dissipation member 91 is pressed toward the first heat dissipation member 6, and the third portion 661 of the second heat dissipation member 91 presses the intermediate member 5 toward the first heat dissipation member 6. This reduces the thermal resistance between the intermediate member 5 and the first heat dissipation member 6. This also reduces the thermal resistance between the fourth portion 662 of the second heat dissipation member 91 and the first heat dissipation member 6. This pressure also reduces the thermal resistance between the third portion 661 of the second heat dissipation member 91 and the intermediate member 5. This allows heat to be more effectively transferred from the intermediate member 5 to each of the first heat dissipation member 6 and the second heat dissipation member 91.

 第3実施形態と同じく、第2放熱部材91の部分91cはヒートシンク92とも対向してもよい。部分91cはヒートシンク92の第1面92aに接してもよく、部分91cとヒートシンク92との間には、放熱グリスなどの高熱伝導性樹脂が位置していてもよい。この構造によれば、間接部材5から、直接または第1放熱部材6を経由して、第2放熱部材91に伝達された熱を、ヒートシンク92に伝達させることができる。 As in the third embodiment, portion 91c of the second heat dissipation member 91 may also face the heat sink 92. Portion 91c may be in contact with the first surface 92a of the heat sink 92, and a highly thermally conductive resin such as thermal grease may be positioned between portion 91c and the heat sink 92. With this structure, heat transferred from the intermediate member 5 to the second heat dissipation member 91, either directly or via the first heat dissipation member 6, can be transferred to the heat sink 92.

 締結部材67の締結により、第2放熱部材91の部分91cがヒートシンク92側に押圧されてもよい。この場合には、第2放熱部材91の部分91cとヒートシンク92との間の熱抵抗を低減させることができる。このため、熱をより効果的に第2放熱部材91からヒートシンク92に伝達させることができる。 By fastening the fastening member 67, the portion 91c of the second heat dissipation member 91 may be pressed toward the heat sink 92. In this case, the thermal resistance between the portion 91c of the second heat dissipation member 91 and the heat sink 92 can be reduced. This allows heat to be transferred more effectively from the second heat dissipation member 91 to the heat sink 92.

 第3実施形態と同じく、第2放熱部材91は筒状体93の内周面に接してもよい。例えば第2放熱部材91の部分91cは筒状体93の内周面に接していてもよい。これによれば、間接部材5からの熱を、第2放熱部材91を通じて筒状体93にも伝達させることができる。このため、照明装置10の放熱性をさらに向上させることができる。 As in the third embodiment, the second heat dissipation member 91 may be in contact with the inner circumferential surface of the cylindrical body 93. For example, portion 91c of the second heat dissipation member 91 may be in contact with the inner circumferential surface of the cylindrical body 93. This allows heat from the intermediate member 5 to be transferred to the cylindrical body 93 via the second heat dissipation member 91. This further improves the heat dissipation performance of the lighting device 10.

 第10実施形態と同じく、第2放熱部材91の第4部分662の一部は、基板21の第1面と平行な方向において、間接部材5の側面5cの少なくとも一部と対面していてもよい。これにより、間接部材5の側面5cの少なくとも一部から蛍光および励起光が出射されたとしても、蛍光および励起光が照明空間に出射される可能性を低減させることができる。 As in the tenth embodiment, a portion of the fourth portion 662 of the second heat dissipation member 91 may face at least a portion of the side surface 5c of the intermediate member 5 in a direction parallel to the first surface of the substrate 21. This reduces the possibility that fluorescence and excitation light will be emitted into the illumination space, even if fluorescence and excitation light are emitted from at least a portion of the side surface 5c of the intermediate member 5.

 図32は、第11実施形態にかかる照明装置10の構成の第2例を概略的に示す斜視図である。第11実施形態の第2例にかかる照明装置10は、第2放熱部材91の構成という点で、第11実施形態の第1例にかかる照明装置10と相違する。 Figure 32 is a perspective view that schematically illustrates a second example of the configuration of the lighting device 10 according to the 11th embodiment. The lighting device 10 according to the second example of the 11th embodiment differs from the lighting device 10 according to the first example of the 11th embodiment in the configuration of the second heat dissipation member 91.

 図32の例でも、第2放熱部材91は押圧部材66としても機能する。図32に示されるように、開口91aは平面視において円形状を有してもよく、第2放熱部材91(具体的には第3部分661)は間接部材5の第1角部551から第4角部554の各々と対向していてもよい。つまり、第2放熱部材91は間接部材5の全ての角部と対向していてもよい。図32に示されるように、第2放熱部材91の第3部分661は開口91aの輪郭の全体を形成していてもよい。 In the example of Figure 32, the second heat dissipation member 91 also functions as the pressing member 66. As shown in Figure 32, the opening 91a may have a circular shape in a plan view, and the second heat dissipation member 91 (specifically, the third portion 661) may face each of the first corner 551 to the fourth corner 554 of the intermediate member 5. In other words, the second heat dissipation member 91 may face all of the corners of the intermediate member 5. As shown in Figure 32, the third portion 661 of the second heat dissipation member 91 may form the entire outline of the opening 91a.

 第11実施形態の第2例によれば、第2放熱部材91の第3部分661はより大きな面積で間接部材5に接している。このため、締結部材67の締結により、第2放熱部材91は間接部材5をより均等に第1放熱部材6側に押圧することができる。このため、間接部材5からの熱を、第2放熱部材91を通じてヒートシンク92または筒状体93により効果的に伝達させることができる。したがって、照明装置10の放熱性をさらに向上させることができる。 According to the second example of the eleventh embodiment, the third portion 661 of the second heat dissipation member 91 contacts the intermediate member 5 over a larger area. Therefore, by fastening the fastening member 67, the second heat dissipation member 91 can press the intermediate member 5 more evenly toward the first heat dissipation member 6. This allows heat from the intermediate member 5 to be more effectively transferred to the heat sink 92 or the cylindrical body 93 via the second heat dissipation member 91. This further improves the heat dissipation performance of the lighting device 10.

 なお、第2放熱部材91は同一材料で一体に形成されてもよく、複数の部材が組み合わされて構成されてもよい。これらの複数の部材は互いに接していてもよく、あるいは、部材どうしの間に高熱伝導性樹脂が位置していてもよい。複数の部材のうち少なくとも2つは異なる材料で形成されてもよい。ここで、同一材料とは主成分が同じであればよく、異なる成分を含んでいてもよい。 The second heat dissipation member 91 may be integrally formed from the same material, or may be composed of a combination of multiple members. These multiple members may be in contact with each other, or a highly thermally conductive resin may be positioned between the members. At least two of the multiple members may be formed from different materials. Here, the same material means that the main components are the same, and may contain different components.

 <第12実施形態および第13実施形態>
 第12実施形態として、図33に示す通り、発光装置1は第1樹脂部材51を含まず、第1放熱部材6の上部に波長変換部材4が載置されていてもよい。また、第13実施形態として、図34に示す通り、発光装置1は第1樹脂部材51を含まず、第1放熱部材6の上部に間接部材5を介して波長変換部材4が載置されていてもよい。いずれの実施形態においても、熱源となり得る発光素子3と波長変換部材4とが基板21の厚さ方向に離れて位置しているため、お互いに熱の影響を受けにくくすることができる。
<Twelfth and Thirteenth Embodiments>
As a twelfth embodiment, as shown in Fig. 33 , the light emitting device 1 may not include the first resin member 51, and the wavelength conversion member 4 may be placed on top of the first heat dissipation member 6. Furthermore, as a thirteenth embodiment, as shown in Fig. 34 , the light emitting device 1 may not include the first resin member 51, and the wavelength conversion member 4 may be placed on top of the first heat dissipation member 6 via an intermediate member 5. In any of the embodiments, the light emitting element 3 and the wavelength conversion member 4, which can be heat sources, are located apart in the thickness direction of the substrate 21, and therefore can be less susceptible to the thermal influence of each other.

 第12実施形態および第13実施形態のいずれの実施形態においても、波長変換部材4の周縁部の一部は基板21の厚さ方向において第1放熱部材6と対向していてもよい。つまり、平面視において、波長変換部材4の一部が第1放熱部材6と重なり合っていてもよい。波長変換部材4のうちの一部が放熱部材61と重なり合い、波長変換部材4のうちの他の一部が放熱部材62と重なり合っていてもよい。第13実施形態においては、間接部材5の周縁部の一部は基板21の厚さ方向において第1放熱部材6と対向していてもよい。つまり、平面視において、間接部材5の一部が、第1放熱部材6と重なり合っていてもよい。間接部材5のうちの一部が放熱部材61と重なり合い、間接部材5のうちの他の一部が放熱部材62と重なり合っていてもよい。 In both the twelfth and thirteenth embodiments, a portion of the peripheral edge of the wavelength conversion member 4 may face the first heat dissipation member 6 in the thickness direction of the substrate 21. That is, in a plan view, a portion of the wavelength conversion member 4 may overlap the first heat dissipation member 6. A portion of the wavelength conversion member 4 may overlap the heat dissipation member 61, and another portion of the wavelength conversion member 4 may overlap the heat dissipation member 62. In the thirteenth embodiment, a portion of the peripheral edge of the intermediate member 5 may face the first heat dissipation member 6 in the thickness direction of the substrate 21. That is, in a plan view, a portion of the intermediate member 5 may overlap the first heat dissipation member 6. A portion of the intermediate member 5 may overlap the heat dissipation member 61, and another portion of the intermediate member 5 may overlap the heat dissipation member 62.

 また、第1放熱部材6によって囲まれた領域には、充填材53が位置していてもよい。充填材53は、第1樹脂部材51に囲まれていること以外は、第1実施形態と同じ特徴を有していてもよい。充填材53は、第1放熱部材6によって囲まれた領域のうち少なくとも発光素子3を覆う部分に位置していてもよい。 Furthermore, a filler 53 may be located in the area surrounded by the first heat dissipation member 6. The filler 53 may have the same characteristics as in the first embodiment, except that it is surrounded by the first resin member 51. The filler 53 may be located in at least the portion of the area surrounded by the first heat dissipation member 6 that covers the light-emitting element 3.

 以上のように、発光装置1および照明装置10は詳細に説明されたが、上記した説明は、全ての局面において例示であって、この開示がそれに限定されるものではない。また、上述した各種例は、相互に矛盾しない限り組み合わせて適用可能である。そして、例示されていない無数の例が、この開示の範囲から外れることなく想定され得るものと解される。 As mentioned above, the light-emitting device 1 and the lighting device 10 have been described in detail, but the above description is illustrative in all respects and this disclosure is not limited thereto. Furthermore, the various examples described above can be applied in combination as long as they are not mutually contradictory. It is understood that countless examples not illustrated can be envisioned without departing from the scope of this disclosure.

 本開示には以下の内容が含まれる。 This disclosure includes the following:

 一実施形態において、(1)発光装置は、基板部と、励起光に基づいて照明光を発する波長変換部材と、前記基板部と前記波長変換部材との間に位置し、前記励起光を発する第1発光素子と、前記基板部と前記波長変換部材との間において前記第1発光素子から離れて位置し、かつ、前記波長変換部材の熱伝導率よりも高い熱伝導率を有する第1放熱部材とを備えることができる。 In one embodiment, (1) the light-emitting device may include a substrate, a wavelength conversion member that emits illumination light based on excitation light, a first light-emitting element that is located between the substrate and the wavelength conversion member and emits the excitation light, and a first heat dissipation member that is located between the substrate and the wavelength conversion member and away from the first light-emitting element, and that has a thermal conductivity higher than that of the wavelength conversion member.

 (2)上記(1)の発光装置であって、前記基板部と前記波長変換部材との間に位置し、平面視において前記第1発光素子を囲む第1樹脂部材を更に備えることができ、前記第1放熱部材は、前記第1樹脂部材の外側において、前記第1樹脂部材と間隔を隔てて隣り合うことができる。 (2) The light-emitting device of (1) above may further include a first resin member located between the substrate portion and the wavelength conversion member and surrounding the first light-emitting element in a planar view, and the first heat dissipation member may be adjacent to the first resin member on the outside of the first resin member with a gap therebetween.

 (3)上記(1)または上記(2)の発光装置であって、平面視において、前記波長変換部材の周縁は前記第1樹脂部材の内周縁より外側に位置することができる。 (3) In the light-emitting device of (1) or (2) above, the peripheral edge of the wavelength conversion member can be positioned outside the inner peripheral edge of the first resin member in a plan view.

 (4)上記(1)から上記(3)のいずれか一つの発光装置であって、第1面および第2面を有し、前記励起光についての透光性を有しており、かつ、前記波長変換部材の熱伝導率よりも高い熱伝導率を有する間接部材をさらに備えることができ、前記間接部材の前記第2面の周縁部は前記第1放熱部材の一部と対向することができ、前記波長変換部材は前記間接部材の前記第1面の上に位置することができる。 (4) Any one of the light-emitting devices (1) to (3) above may further include an intermediate member having a first surface and a second surface, being translucent to the excitation light, and having a thermal conductivity higher than that of the wavelength conversion member, wherein the peripheral edge of the second surface of the intermediate member may face a portion of the first heat dissipation member, and the wavelength conversion member may be positioned on the first surface of the intermediate member.

 (5)上記(4)の発光装置であって、前記波長変換部材は、複数の蛍光体粒子と、前記複数の蛍光体粒子を接合しているバインダー層とを含むことができ、前記波長変換部材は前記間接部材に接合されることができる。 (5) In the light-emitting device of (4) above, the wavelength conversion member can include a plurality of phosphor particles and a binder layer bonding the plurality of phosphor particles together, and the wavelength conversion member can be bonded to the intermediate member.

 (6)上記(4)または上記(5)の発光装置であって、前記間接部材の破壊強度は前記波長変換部材の破壊強度よりも高くてもよい。 (6) In the light-emitting device of (4) or (5) above, the fracture strength of the intermediate member may be higher than the fracture strength of the wavelength conversion member.

 (7)上記(4)から上記(6)のいずれか一つの発光装置であって、前記間接部材の前記第2面に接しており、前記間接部材の熱伝導率よりも高い熱伝導率を有する第1伝熱部材をさらに備えることができ、前記第1伝熱部材は、前記第1放熱部材と対向している第1部分と、前記第1部分に接続されており、平面視において、前記第1放熱部材よりも前記第1樹脂部材側に位置している第2部分とを含むことができ、前記波長変換部材の少なくとも一部と対向する領域において、前記第1発光素子からの前記励起光を通過させる第1開口を有することができる。 (7) Any one of the light-emitting devices described in (4) to (6) above may further include a first heat transfer member that is in contact with the second surface of the intermediate member and has a thermal conductivity higher than that of the intermediate member, and the first heat transfer member may include a first portion that faces the first heat dissipation member and a second portion that is connected to the first portion and is located closer to the first resin member than the first heat dissipation member in a planar view, and may have a first opening that passes the excitation light from the first light-emitting element in a region that faces at least a portion of the wavelength conversion member.

 (8)上記(7)の発光装置であって、前記第1開口の輪郭は前記第1樹脂部材の内周縁よりも外側に位置することができる。 (8) In the light-emitting device of (7) above, the outline of the first opening can be positioned outside the inner peripheral edge of the first resin member.

 (9)上記(7)または上記(8)の発光装置であって、前記第1伝熱部材は前記間接部材に接合することができる。 (9) In the light-emitting device of (7) or (8) above, the first heat transfer member can be joined to the intermediate member.

 (10)上記(7)から上記(9)のいずれか一つの発光装置であって、第2伝熱部材をさらに含むことができ、前記第2伝熱部材は、前記間接部材の熱伝導率よりも高い熱伝導率を有しており、前記間接部材の前記第1面に接することができる。 (10) The light-emitting device according to any one of (7) to (9) above may further include a second heat transfer member, the second heat transfer member having a thermal conductivity higher than that of the intermediate member, and being in contact with the first surface of the intermediate member.

 (11)上記(10)の発光装置であって、前記第2伝熱部材は第2開口を有することができ、前記第2開口の輪郭は前記波長変換部材を囲むことができる。 (11) In the light-emitting device of (10) above, the second heat transfer member may have a second opening, and the outline of the second opening may surround the wavelength conversion member.

 (12)上記(10)または上記(11)の発光装置であって、第3伝熱部材をさらに含むことができ、前記第3伝熱部材は、前記間接部材の熱伝導率よりも高い熱伝導率を有しており、前記間接部材の側面に接した状態で、前記第1伝熱部材および前記第2伝熱部材を接続することができる。 (12) The light-emitting device of (10) or (11) above may further include a third heat transfer member, the third heat transfer member having a thermal conductivity higher than that of the intermediate member, and the first heat transfer member and the second heat transfer member may be connected in contact with the side surface of the intermediate member.

 (13)上記(12)の発光装置であって、前記照明光についての前記第3伝熱部材の透過率は、前記照明光についての前記間接部材の透過率よりも低くてもよい。 (13) In the light-emitting device of (12) above, the transmittance of the third heat transfer member for the illumination light may be lower than the transmittance of the indirect member for the illumination light.

 (14)上記(13)の発光装置であって、前記第1伝熱部材、前記第2伝熱部材および前記第3伝熱部材は同一材料で形成されることができる。 (14) In the light-emitting device of (13) above, the first heat transfer member, the second heat transfer member, and the third heat transfer member can be formed from the same material.

 (15)上記(7)から上記(14)のいずれか一つの発光装置であって、前記間接部材を前記第1放熱部材側に押圧する押圧部をさらに備えることができる。 (15) Any one of the light-emitting devices (7) to (14) above may further include a pressing portion that presses the intermediate member toward the first heat dissipation member.

 (16)上記(15)の発光装置であって、前記押圧部の熱伝導率は前記波長変換部材の熱伝導率よりも高くてもよい。 (16) In the light-emitting device of (15) above, the thermal conductivity of the pressing portion may be higher than the thermal conductivity of the wavelength conversion member.

 (17)上記(15)または上記(16)の発光装置であって、前記押圧部は押圧部材および締結部材を含むことができ、前記押圧部材は、前記間接部材の前記第1面側に位置する第3部分と、前記第3部分と接続されており、前記間接部材よりも外側に位置する第4部分とを含むことができ、前記締結部材は、前記第4部分に形成された貫通穴を通じて、前記押圧部材を前記第1放熱部材に締結することができる。 (17) In the light-emitting device of (15) or (16) above, the pressing portion may include a pressing member and a fastening member, the pressing member may include a third portion located on the first surface side of the intermediate member and a fourth portion connected to the third portion and located outside the intermediate member, and the fastening member may fasten the pressing member to the first heat dissipation member through a through hole formed in the fourth portion.

 (18)上記(17)の発光装置であって、前記第4部分は、前記間接部材の側面を外側から部分的に覆う部位を含む。 (18) In the light-emitting device of (17) above, the fourth portion includes a portion that partially covers the side surface of the connecting member from the outside.

 (19)上記(1)から上記(18)のいずれか一つの発光装置であって、前記第1樹脂部材と、前記第1放熱部材との間に位置しており、空気よりも熱伝導率が高い第2樹脂部材をさらに備えることができる。 (19) Any one of the light-emitting devices (1) to (18) above may further include a second resin member positioned between the first resin member and the first heat dissipation member and having a thermal conductivity higher than that of air.

 (20)上記(1)から上記(19)のいずれか一つの発光装置であって、前記第1樹脂部材と前記第1放熱部材との間に位置している電子部品をさらに備えることができる。 (20) The light-emitting device according to any one of (1) to (19) above may further include an electronic component located between the first resin member and the first heat dissipation member.

 (21)上記(20)の発光装置であって、前記電子部品は、前記第1発光素子を保護する保護素子を含むことができる。 (21) In the light-emitting device of (20) above, the electronic component may include a protective element that protects the first light-emitting element.

 (22)上記(1)から上記(21)のいずれか一つの発光装置であって、前記第1発光素子の前記励起光の波長と異なる波長を有する光を発する第2発光素子をさらに備えることができる。 (22) Any one of the light-emitting devices (1) to (21) above may further include a second light-emitting element that emits light having a wavelength different from the wavelength of the excitation light of the first light-emitting element.

 (23)上記(22)の発光装置であって、前記第1発光素子に接続された第1電極と、前記第2発光素子に接続され、前記第1電極に印加される電圧とは異なる電圧が印加される第2電極とを備えることができる。 (23) The light-emitting device of (22) above may include a first electrode connected to the first light-emitting element, and a second electrode connected to the second light-emitting element and to which a voltage different from the voltage applied to the first electrode is applied.

 (24)上記(23)の発光装置であって、前記波長変換部材は、前記励起光に基づいて第1蛍光を発する第1蛍光体と、前記励起光に基づいて第2蛍光を発する第2蛍光体とを含むことができ、前記励起光についての前記第2蛍光体の吸収率の波長依存性は、前記励起光についての第1蛍光体の吸収率の波長依存性よりも大きくてもよく、前記第2発光素子は、前記第1蛍光よりも前記第2蛍光の波長に近い波長を有する光を発することができる。 (24) In the light-emitting device of (23) above, the wavelength conversion member may include a first phosphor that emits a first fluorescence based on the excitation light and a second phosphor that emits a second fluorescence based on the excitation light, and the wavelength dependence of the absorption rate of the second phosphor for the excitation light may be greater than the wavelength dependence of the absorption rate of the first phosphor for the excitation light, and the second light-emitting element may emit light having a wavelength closer to the wavelength of the second fluorescence than to the wavelength of the first fluorescence.

 (25)上記(1)から上記(24)のいずれか一つの発光装置であって、前記第1発光素子と接続された第1電極を備えることができ、平面視において、前記第1樹脂部材の少なくとも一部は、前記第1電極の少なくとも一部と重なる位置にあってもよく、前記第1放熱部材は導電性を有してもよく、平面視において前記第1電極を避けた領域に位置することができる。 (25) Any one of the light-emitting devices (1) to (24) above may include a first electrode connected to the first light-emitting element, and in a planar view, at least a portion of the first resin member may be positioned to overlap at least a portion of the first electrode, and the first heat dissipation member may be conductive and may be positioned in a region that avoids the first electrode in a planar view.

 (26)上記(1)から上記(25)のいずれか一つの発光装置であって、前記励起光についての反射性を有する反射材をさらに備えることができ、前記基板部は、基板と、前記基板上の絶縁膜と、前記絶縁膜上に位置している第1電極とを含むことができ、前記第1発光素子は前記第1電極の上に位置して前記第1電極に接続されることができ、前記反射材は、前記第1発光素子との隣り合う位置で前記絶縁膜上に位置することができる。 (26) Any one of the light-emitting devices (1) to (25) above may further include a reflector that is reflective to the excitation light, and the substrate portion may include a substrate, an insulating film on the substrate, and a first electrode located on the insulating film, the first light-emitting element may be located on the first electrode and connected to the first electrode, and the reflector may be located on the insulating film at a position adjacent to the first light-emitting element.

 (27)上記(1)から上記(26)のいずれか一つの発光装置であって、前記基板部は、前記励起光についての反射性を有する基板を含むことができ、前記発光装置は、前記第1発光素子と隣り合う位置で前記基板上に位置する絶縁膜と、前記絶縁膜上に位置し、ワイヤにより前記第1発光素子と電気的に接続される第1電極とを備えることができる。 (27) In any one of the light-emitting devices (1) to (26) above, the substrate portion may include a substrate that is reflective to the excitation light, and the light-emitting device may include an insulating film located on the substrate at a position adjacent to the first light-emitting element, and a first electrode located on the insulating film and electrically connected to the first light-emitting element by a wire.

 (28)照明装置は、上記(1)から上記(27)のいずれか一つの発光装置と、前記発光装置を収納する筒状体と、前記第1放熱部材および前記筒状体の内周面に接する第2放熱部材とを備えることができる。 (28) The lighting device may include any one of the light-emitting devices (1) to (27) above, a cylindrical body that houses the light-emitting device, and a second heat-dissipating member that contacts the first heat-dissipating member and the inner surface of the cylindrical body.

 (29)照明装置は、上記(17)または上記(18)の発光装置と、前記発光装置を収納する筒状体と、前記第1放熱部材および前記筒状体の内周面に接する第2放熱部材とを備えることができ、前記第2放熱部材は前記押圧部材を有することができる。 (29) The lighting device may include the light-emitting device of (17) or (18) above, a cylindrical body that houses the light-emitting device, and a second heat-dissipating member that contacts the first heat-dissipating member and the inner surface of the cylindrical body, and the second heat-dissipating member may have the pressing member.

 1 発光装置
 10 照明装置
 2 基板部
 21 基板
 22 絶縁膜
 3 第1発光素子(発光素子)
 35 電子部品
 3A,3D 第2発光素子(発光素子)
 3B,3C 第1発光素子(発光素子)
 4 波長変換部材
 41 蛍光体粒子
 41a 第1蛍光体
 41b 第2蛍光体
 42 バインダー層
 5 間接部材
 5a 第1面
 5b 第2面
 5c 側面
 51 第1樹脂部材
 52 第2樹脂部材
 561 第1伝熱部材
 562 第2伝熱部材
 563 第3伝熱部材
 56a 第1開口
 56b 第2開口
 571 第1部分
 572 第2部分
 6 第1放熱部材
 65 押圧部
 65a 貫通穴
 66 押圧部材
 661 第3部分
 662 第4部分
 67 締結部材
 71a 第1電極(素子電極)
 77a 第2電極(素子電極)
 8 反射材
 91 第2放熱部材
 93 筒状体
REFERENCE SIGNS LIST 1 Light emitting device 10 Lighting device 2 Substrate portion 21 Substrate 22 Insulating film 3 First light emitting element (light emitting element)
35 Electronic component 3A, 3D Second light-emitting element (light-emitting element)
3B, 3C First light-emitting element (light-emitting element)
4 Wavelength conversion member 41 Phosphor particles 41a First phosphor 41b Second phosphor 42 Binder layer 5 Intermediate member 5a First surface 5b Second surface 5c Side surface 51 First resin member 52 Second resin member 561 First heat transfer member 562 Second heat transfer member 563 Third heat transfer member 56a First opening 56b Second opening 571 First portion 572 Second portion 6 First heat dissipation member 65 Pressing portion 65a Through hole 66 Pressing member 661 Third portion 662 Fourth portion 67 Fastening member 71a First electrode (element electrode)
77a Second electrode (element electrode)
8 Reflector 91 Second heat dissipation member 93 Cylindrical body

Claims (29)

 基板部と、
 励起光に基づいて照明光を発する波長変換部材と、
 前記基板部と前記波長変換部材との間に位置し、前記励起光を発する第1発光素子と、
 前記基板部と前記波長変換部材との間において前記第1発光素子から離れて位置し、かつ、前記波長変換部材の熱伝導率よりも高い熱伝導率を有する第1放熱部材と
を備える、発光装置。
A substrate portion;
a wavelength conversion member that emits illumination light based on the excitation light;
a first light-emitting element located between the substrate portion and the wavelength converting member and emitting the excitation light;
a first heat dissipation member positioned between the substrate portion and the wavelength conversion member and spaced apart from the first light emitting element, the first heat dissipation member having a thermal conductivity higher than that of the wavelength conversion member.
 請求項1に記載の発光装置であって、
 前記基板部と前記波長変換部材との間に位置し、平面視において前記第1発光素子を囲む第1樹脂部材を更に備え、
 前記第1放熱部材は、前記第1樹脂部材の外側において、前記第1樹脂部材と間隔を隔てて隣り合う、発光装置。
2. The light emitting device according to claim 1,
a first resin member positioned between the substrate portion and the wavelength conversion member and surrounding the first light emitting element in a plan view;
the first heat dissipation member is adjacent to the first resin member at an interval outside the first resin member.
 請求項2に記載の発光装置であって、
 平面視において、前記波長変換部材の周縁は前記第1樹脂部材の内周縁より外側に位置している、発光装置。
3. The light emitting device according to claim 2,
In a plan view, a peripheral edge of the wavelength conversion member is located outside an inner peripheral edge of the first resin member.
 請求項1から請求項3のいずれか一つに記載の発光装置であって、
 第1面および第2面を有し、前記励起光についての透光性を有しており、かつ、前記波長変換部材の熱伝導率よりも高い熱伝導率を有する間接部材をさらに備え、
 前記間接部材の前記第2面の周縁部は前記第1放熱部材の一部と対向しており、
 前記波長変換部材は前記間接部材の前記第1面の上に位置している、発光装置。
4. The light emitting device according to claim 1,
an intermediate member having a first surface and a second surface, being translucent to the excitation light, and having a thermal conductivity higher than that of the wavelength conversion member;
a peripheral portion of the second surface of the intermediate member faces a part of the first heat dissipation member,
The wavelength conversion member is located on the first surface of the supporting member.
 請求項4に記載の発光装置であって、
 前記波長変換部材は、複数の蛍光体粒子と、前記複数の蛍光体粒子を接合しているバインダー層とを含み、
 前記波長変換部材は前記間接部材に接合されている、発光装置。
5. The light emitting device according to claim 4,
the wavelength conversion member includes a plurality of phosphor particles and a binder layer that bonds the plurality of phosphor particles together,
The wavelength conversion member is joined to the intermediate member.
 請求項4または請求項5に記載の発光装置であって、
 前記間接部材の破壊強度は前記波長変換部材の破壊強度よりも高い、発光装置。
6. The light emitting device according to claim 4 or claim 5,
The light emitting device, wherein the fracture strength of the intermediate member is higher than the fracture strength of the wavelength conversion member.
 請求項4から請求項6のいずれか一つに記載の発光装置であって、
 前記間接部材の前記第2面に接しており、前記間接部材の熱伝導率よりも高い熱伝導率を有する第1伝熱部材をさらに備え、
 前記第1伝熱部材は、
 前記第1放熱部材と対向している第1部分と、
 前記第1部分に接続されており、平面視において、前記第1放熱部材よりも前記第1樹脂部材側に位置している第2部分と
を含み、前記波長変換部材の少なくとも一部と対向する領域において、前記第1発光素子からの前記励起光を通過させる第1開口を有する、発光装置。
7. The light emitting device according to claim 4,
a first heat transfer member in contact with the second surface of the intermediate member and having a thermal conductivity higher than that of the intermediate member;
The first heat transfer member is
a first portion facing the first heat dissipation member;
a second portion connected to the first portion and positioned closer to the first resin member than the first heat dissipation member in a planar view, and having a first opening in an area facing at least a portion of the wavelength conversion member that allows the excitation light from the first light-emitting element to pass through.
 請求項7に記載の発光装置であって、
 前記第1開口の輪郭は前記第1樹脂部材の内周縁よりも外側に位置する、発光装置。
8. The light emitting device according to claim 7,
a contour of the first opening positioned outside an inner periphery of the first resin member;
 請求項7または請求項8に記載の発光装置であって、
 前記第1伝熱部材は前記間接部材に接合している、発光装置。
9. The light emitting device according to claim 7 or claim 8,
The light emitting device, wherein the first heat transfer member is joined to the intermediate member.
 請求項7から請求項9のいずれか一つに記載の発光装置であって、
 第2伝熱部材をさらに含み、
 前記第2伝熱部材は、前記間接部材の熱伝導率よりも高い熱伝導率を有しており、前記間接部材の前記第1面に接している、発光装置。
10. The light emitting device according to claim 7,
Further comprising a second heat transfer member;
The second heat transfer member has a thermal conductivity higher than that of the intermediate member and is in contact with the first surface of the intermediate member.
 請求項10に記載の発光装置であって、
 前記第2伝熱部材は第2開口を有しており、
 前記第2開口の輪郭は前記波長変換部材を囲んでいる、発光装置。
11. The light emitting device according to claim 10,
the second heat transfer member has a second opening;
The outline of the second opening surrounds the wavelength converting member.
 請求項10または請求項11に記載の発光装置であって、
 第3伝熱部材をさらに含み、
 前記第3伝熱部材は、前記間接部材の熱伝導率よりも高い熱伝導率を有しており、前記間接部材の側面に接した状態で、前記第1伝熱部材および前記第2伝熱部材を接続している、発光装置。
12. The light emitting device according to claim 10 or 11,
further comprising a third heat transfer member;
A light emitting device, wherein the third heat transfer member has a thermal conductivity higher than that of the intermediate member, and connects the first heat transfer member and the second heat transfer member while being in contact with a side surface of the intermediate member.
 請求項12に記載の発光装置であって、
 前記照明光についての前記第3伝熱部材の透過率は、前記照明光についての前記間接部材の透過率よりも低い、発光装置。
13. The light emitting device according to claim 12,
a transmittance of the third heat transfer member for the illumination light being lower than a transmittance of the intermediate member for the illumination light;
 請求項13に記載の発光装置であって、
 前記第1伝熱部材、前記第2伝熱部材および前記第3伝熱部材は同一材料で形成されている、発光装置。
14. The light emitting device according to claim 13,
The light emitting device, wherein the first heat transfer member, the second heat transfer member, and the third heat transfer member are formed of the same material.
 請求項7から請求項14のいずれか一つに記載の発光装置であって、
 前記間接部材を前記第1放熱部材側に押圧する押圧部をさらに備える、発光装置。
15. The light emitting device according to claim 7,
The light emitting device further includes a pressing portion that presses the intermediate member toward the first heat dissipation member.
 請求項15に記載の発光装置であって、
 前記押圧部の熱伝導率は前記波長変換部材の熱伝導率よりも高い、発光装置。
16. The light emitting device according to claim 15,
The light emitting device, wherein the pressing portion has a thermal conductivity higher than that of the wavelength conversion member.
 請求項15または請求項16に記載の発光装置であって、
 前記押圧部は押圧部材および締結部材を含み、
 前記押圧部材は、
 前記間接部材の第1面側に位置する第3部分と、
 前記第3部分と接続されており、前記間接部材よりも外側に位置する第4部分と
を含み、
 前記締結部材は、前記第4部分に形成された貫通穴を通じて、前記押圧部材を前記第1放熱部材に締結する、発光装置。
17. The light emitting device according to claim 15 or claim 16,
the pressing portion includes a pressing member and a fastening member,
The pressing member is
a third portion located on the first surface side of the intermediate member;
a fourth portion connected to the third portion and positioned outside the intermediate member,
The fastening member fastens the pressing member to the first heat dissipation member through a through hole formed in the fourth portion.
 請求項17に記載の発光装置であって、
 前記第4部分は、前記間接部材の側面を外側から部分的に覆う部位を含む、発光装置。
18. The light emitting device according to claim 17,
The fourth portion includes a portion that partially covers a side surface of the connecting member from the outside.
 請求項1から請求項18のいずれか一つに記載の発光装置であって、
 前記第1樹脂部材と、前記第1放熱部材との間に位置しており、空気よりも熱伝導率が高い第2樹脂部材をさらに備える、発光装置。
19. The light emitting device according to claim 1,
The light emitting device further comprises a second resin member positioned between the first resin member and the first heat dissipation member, the second resin member having a thermal conductivity higher than that of air.
 請求項1から請求項19のいずれか一つに記載の発光装置であって、
 前記第1樹脂部材と前記第1放熱部材との間に位置している電子部品をさらに備える、発光装置。
20. The light emitting device according to claim 1,
The light emitting device further comprises an electronic component located between the first resin member and the first heat dissipation member.
 請求項20に記載の発光装置であって、
 前記電子部品は、前記第1発光素子を保護する保護素子を含む、発光装置。
21. The light emitting device according to claim 20,
The electronic component includes a protection element that protects the first light-emitting element.
 請求項1から請求項21のいずれか一つに記載の発光装置であって、
 前記第1発光素子の前記励起光の波長と異なる波長を有する光を発する第2発光素子をさらに備える、発光装置。
22. The light emitting device according to claim 1,
The light emitting device further comprises a second light emitting element that emits light having a wavelength different from the wavelength of the excitation light of the first light emitting element.
 請求項22に記載の発光装置であって、
 前記第1発光素子に接続された第1電極と、
 前記第2発光素子に接続され、前記第1電極に印加される電圧とは異なる電圧が印加される第2電極と
を備える、発光装置。
23. The light emitting device according to claim 22,
a first electrode connected to the first light emitting element;
a second electrode connected to the second light-emitting element and applied with a voltage different from the voltage applied to the first electrode;
 請求項23に記載の発光装置であって、
 前記波長変換部材は、
 前記励起光に基づいて第1蛍光を発する第1蛍光体と、
 前記励起光に基づいて第2蛍光を発する第2蛍光体と
を含み、
 前記励起光についての前記第2蛍光体の吸収率の波長依存性は、前記励起光についての第1蛍光体の吸収率の波長依存性よりも大きく、
 前記第2発光素子は、前記第1蛍光よりも前記第2蛍光の波長に近い波長を有する光を発する、発光装置。
24. The light emitting device according to claim 23,
The wavelength conversion member is
a first fluorescent material that emits a first fluorescent light in response to the excitation light;
a second fluorescent material that emits a second fluorescent light based on the excitation light,
the wavelength dependence of the absorptance of the second phosphor with respect to the excitation light is greater than the wavelength dependence of the absorptance of the first phosphor with respect to the excitation light;
The second light-emitting element emits light having a wavelength closer to the wavelength of the second fluorescent light than to the wavelength of the first fluorescent light.
 請求項1から請求項24のいずれか一つに記載の発光装置であって、
 前記第1発光素子と接続された第1電極を備え、
 平面視において、前記第1樹脂部材の少なくとも一部は、前記第1電極の少なくとも一部と重なる位置にあり、
 前記第1放熱部材は導電性を有しており、平面視において前記第1電極を避けた領域に位置している、発光装置。
25. The light emitting device according to claim 1,
a first electrode connected to the first light-emitting element;
In a plan view, at least a portion of the first resin member is located at a position overlapping at least a portion of the first electrode,
The light emitting device, wherein the first heat dissipation member is electrically conductive and is located in a region that avoids the first electrode in a plan view.
 請求項1から請求項25のいずれか一つに記載の発光装置であって、
 前記励起光についての反射性を有する反射材をさらに備え、
 前記基板部は、
 基板と、
 前記基板上の絶縁膜と、
 前記絶縁膜上に位置している第1電極と
を含み、
 前記第1発光素子は前記第1電極の上に位置して前記第1電極に接続されおり、
 前記反射材は、前記第1発光素子との隣り合う位置で前記絶縁膜上に位置している、発光装置。
26. The light emitting device according to claim 1,
further comprising a reflector having reflectivity for the excitation light,
The substrate portion is
A substrate;
an insulating film on the substrate;
a first electrode located on the insulating film;
the first light emitting element is located on the first electrode and connected to the first electrode;
The light-emitting device, wherein the reflector is located on the insulating film at a position adjacent to the first light-emitting element.
 請求項1から請求項26のいずれか一つに記載の発光装置であって、
 前記基板部は、前記励起光についての反射性を有する基板を含み、
 前記発光装置は、
 前記第1発光素子と隣り合う位置で前記基板上に位置する絶縁膜と、
 前記絶縁膜上に位置し、ワイヤにより前記第1発光素子と電気的に接続される第1電極と
を備える、発光装置。
27. The light emitting device according to claim 1,
the substrate unit includes a substrate that is reflective to the excitation light,
The light emitting device comprises:
an insulating film located on the substrate at a position adjacent to the first light emitting element;
a first electrode located on the insulating film and electrically connected to the first light-emitting element by a wire;
 請求項1から請求項27のいずれか一つに記載の発光装置と、
 前記発光装置を収納する筒状体と、
 前記第1放熱部材および前記筒状体の内周面に接する第2放熱部材と
を備える、照明装置。
a light emitting device according to any one of claims 1 to 27;
a cylindrical body that houses the light emitting device;
a second heat dissipation member in contact with the inner circumferential surface of the cylindrical body;
 請求項17または請求項18に記載の発光装置と、
 前記発光装置を収納する筒状体と、
 前記第1放熱部材および前記筒状体の内周面に接する第2放熱部材と
を備え、
 前記第2放熱部材は前記押圧部材を有する、照明装置。
a light-emitting device according to claim 17 or 18;
a cylindrical body that houses the light emitting device;
a second heat dissipation member in contact with the first heat dissipation member and an inner circumferential surface of the cylindrical body,
The second heat dissipation member includes the pressing member.
PCT/JP2025/018417 2024-05-24 2025-05-21 Light-emitting device and illumination device Pending WO2025244063A1 (en)

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