WO2025243995A1 - Ceramic structure - Google Patents
Ceramic structureInfo
- Publication number
- WO2025243995A1 WO2025243995A1 PCT/JP2025/018087 JP2025018087W WO2025243995A1 WO 2025243995 A1 WO2025243995 A1 WO 2025243995A1 JP 2025018087 W JP2025018087 W JP 2025018087W WO 2025243995 A1 WO2025243995 A1 WO 2025243995A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wiring layer
- ceramic structure
- cavity
- substrate
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Definitions
- This disclosure relates to ceramic structures.
- Patent Document 1 discloses a rod-shaped ceramic heater that has a heating resistor inside. These ceramic heaters have connection terminals on the side of the rod-shaped ceramic substrate.
- the ceramic structure disclosed herein comprises a ceramic substrate and a wiring layer located inside the substrate.
- the substrate has a first opening located on its surface, a first cavity connecting the first opening and the wiring layer, and a rod-shaped terminal having a side surface and an end surface, at least a portion of which is located within the first cavity.
- the wiring layer has a first surface, a second surface located opposite the first surface, and a third surface connecting the first surface and the second surface.
- the terminal faces the third surface of the wiring layer within the first cavity, and the longitudinal direction of the terminal is approximately parallel to the first surface within the first cavity.
- the terminal and the wiring layer are electrically connected.
- FIG. 1 is a perspective view of a substrate in a ceramic structure according to a first embodiment.
- FIG. 2 is a cross-sectional view of the substrate in the ceramic structure according to the first embodiment.
- FIG. 3 is a cross-sectional view of the ceramic structure according to the first embodiment.
- FIG. 4 is an enlarged cross-sectional view of a main part of the ceramic structure according to the first embodiment.
- FIG. 5 is an enlarged cross-sectional view of a main part of the ceramic structure according to the first embodiment.
- FIG. 6 is a cross-sectional view of the ceramic structure according to the first embodiment.
- FIG. 7 is a cross-sectional view of the ceramic structure according to the second embodiment.
- FIG. 8 is a cross-sectional view of a ceramic structure according to the third embodiment.
- FIG. 9 is a cross-sectional view of the ceramic structure according to the fourth embodiment.
- FIG. 10 is a cross-sectional view of the ceramic structure according to the fifth embodiment.
- the present disclosure relates to a ceramic structure with improved electrical connection terminal arrangement.
- the ceramic structure 100 according to the first embodiment may have, for example, a rod-shaped substrate 1 as shown in FIGS. 1 to 3. Cross sections taken along the dashed line connecting L1 and L2 shown in FIG. 1 are shown in FIGS. 2 and 3. Cross sections taken along the circular dashed line indicated by L3 in FIG. 1 are shown in FIGS. 4 and 5.
- the substrate 1 may be plate-shaped or cylindrical.
- the substrate 1 may have, for example, a total length of about 10 to 100 mm and a width of about 5 to 50 mm.
- the substrate 1 is made of ceramics.
- the substrate 1 may be made of an alumina sintered body, a zirconia sintered body, a silicon nitride sintered body, or an aluminum nitride sintered body.
- the substrate 1 may have a wiring layer 3 inside.
- the material of the wiring layer 3 may be, for example, copper, silver, tungsten, molybdenum, platinum, or any other metal that has traditionally been used for wiring layers 3.
- the wiring layer 3 may have a linear shape, for example, where the width is greater than the thickness.
- a linear shape may also mean a shape that extends in a certain direction with a length equal to or greater than the width.
- the wiring layer 3 may have, for example, a first surface 3a and a second surface 3b located opposite the first surface 3a.
- the surface connecting the first surface 3a and the second surface 3b is illustrated as the third surface 3c.
- the base 1 has a first opening 9 located on its surface and a first cavity 11 connected to the first opening 9.
- the base 1 may have a first end face 13a and a second end face 13b located opposite the first end face 13a.
- the first opening 9 may be located at the first end face 13a.
- the wiring layer 3 is exposed on the inner wall surface 11a of the first cavity 11.
- at least a portion of the terminal 15 is located in the first cavity 11.
- the terminal 15 may be a rod-shaped member having a side surface and an end face.
- the terminal 15 may have a third end face 15a located inside the first cavity 11, a fourth end face 15b located opposite the third end face 15a, and a side face 15c connecting the third end face 15a and the fourth end face 15b.
- the terminal 15 may be a metal wire or a so-called terminal for attaching a metal wire.
- the base 1 may have a second opening 5a located on the surface and a second cavity 7 connected to the second opening 5a.
- the second opening 5a may be located on the first end surface 13a.
- the second cavity 7 is a through-hole.
- the base 1 may have a third opening 5b located opposite the second opening 5a.
- the third opening 5b may be located on the second end surface 13b.
- the second cavity 7 may be connected to the second opening 5a and the third opening 5b. In this way, the base 1 may have a third opening 5b connected to the second cavity 7.
- this is not limited to this, and the second cavity 7 may have a bottom surface.
- the terminal 15 and the third surface 3c of the wiring layer 3 face each other inside the first cavity 11. Specifically, the side surface 15c of the terminal 15 and the third surface 3c of the wiring layer 3 may face each other inside the first cavity 11.
- the terminal 15 and the wiring layer 3 may be electrically connected, for example, via a brazing material (not shown).
- the terminal 15 and the wiring layer 3 may also be electrically connected, for example, via a conductive adhesive (not shown).
- the wiring layer 3 may have ends that are exposed on the surface of the ceramic structure 100 and are not electrically connected to the terminals 15. If the wiring layer 3 has such ends, the ceramic structure 100 can be used as a wiring member for supplying power.
- the base 1 may have multiple first openings 9 on the first end surface 13a.
- the base 1 may also have a first opening 9 on the second end surface 13b.
- the wiring layer 3 exposed in the two first cavities 11 connected to the two first openings 9 may be electrically connected.
- FIGS. 2 and 3 show an example in which, in a cross section, multiple wiring layers 3 are aligned in the longitudinal direction connecting the first end face 13a and the second end face 13b of the base 1. These wiring layers 3 may be electrically independent. Alternatively, all of the wiring layers 3 may be electrically connected. For example, in the example shown in FIGS. 2 and 3, the wiring layers 3 may be arranged in a spiral shape inside the base 1. In this way, the wiring layers 3 may surround the second cavity 7.
- the wiring layer 3 may be arranged so as to intersect with the longitudinal direction of the base 1.
- the wiring layer 3 is exposed on the inner wall surface of the first cavity 11.
- the wiring layer 3 is not exposed on the bottom surface of the first cavity 11.
- the wiring layer 3 is exposed on both the side and bottom surfaces of the first cavity 11.
- the exposed area of the wiring layer 3 is larger, thereby increasing the connection reliability between the wiring layer 3 and the terminal 15.
- the third surface 3c of the wiring layer 3 faces the third end surface 15a and side surface 15c of the terminal 15, increasing the contact area between the wiring layer 3 and the terminal 15 and improving the connection reliability between them.
- the resistance value in the connection between the wiring layer 3 and the terminal 15 is reduced.
- the wiring layer 3 may be a heating resistor.
- the ceramic structure 100 of the present disclosure may be a heater.
- the wiring layer 3 may have, for example, wiring layers 3 made of two different metals, and the wiring layers 3 made of these different metals may be connected inside the base 1 to function as a so-called thermocouple. In this configuration, it is possible to measure the temperature of a substance located inside the second cavity 7 located inside the base 1.
- the ceramic structure 100 of the present disclosure may be a sensor holder.
- the ceramic structure 100 may have a sensor 16 mounted on the surface of the base 1.
- the sensor 16 may be located, for example, on the second end surface 13b of the base 1.
- the sensor 16 may be, for example, a temperature sensor.
- the end of the wiring layer 3 may be exposed on the second end surface 13b of the base 1. In such a case, the end of the wiring layer 3 and the electrode portion of the sensor 16 can be electrically connected. This allows the wiring layer 3 to serve as a power supply for the sensor 16.
- the wiring layer 3 can be protected by the ceramic substrate 1. This makes it less likely for short circuits to occur in the wiring layer 3. Furthermore, by protecting the wiring layer 3 from liquids and atmospheric gases, deterioration of the wiring layer 3 can be reduced.
- the ceramic structure of the present disclosure can be produced, for example, by the method described below.
- the ceramic molded body may contain, for example, alumina powder and a binder.
- a ceramic molded body can be produced using a conventionally known extrusion molding method.
- This sheet-shaped ceramic compact may also contain alumina powder and a binder. Then, for example, a commercially available metal conductor paste is printed on one surface of this sheet-shaped ceramic compact to form a wiring pattern that will become the wiring layer after firing.
- the sheet-like ceramic molded body with the wiring pattern formed on it is wrapped around the surface of the cylindrical ceramic molded body. At this time, it is preferable to wrap it so that the wiring pattern is in contact with the surface of the cylindrical ceramic molded body.
- holes are drilled into the end surface of the cylindrical ceramic molded body to expose the wiring pattern.
- the resulting substrate is subjected to a first cavity formed in the end surface.
- a brazing filler metal and a rod-shaped terminal are inserted into the cavity, and the substrate is heated to a temperature at which the brazing filler metal melts, thereby producing the ceramic structure of the present disclosure.
- FIG. 7 is a cross-sectional view of the ceramic structure 100 according to the second embodiment.
- the first opening 9 was located on the first end surface 13 a of the base 1.
- the first opening 9 may be located on the side surface 13 c of the base 1.
- the side surface 13 c here refers to a surface of the base 1 that connects the first end surface 13 a and the second end surface 13 b.
- the position of the first opening 9 on the side surface 13 c is not particularly limited. However, for example, if the first opening 9 is located on the side surface 13 c on the first end surface 13 a side of the base 1, it is easy to attach a terminal 15 to the ceramic structure 100.
- the base 1 may have a wiring layer 3 arranged along the longitudinal direction connecting the first end face 13a and the second end face 13b, and a wiring layer 3 arranged so as to intersect with the longitudinal direction of the base 1.
- the wiring layer 3 arranged along the longitudinal direction of the base 1 may surround the second cavity 7.
- the wiring layer 3 arranged so as to intersect with the longitudinal direction of the base 1 may be exposed on the inner wall surface of the first cavity 11.
- the base 1 according to the second embodiment may be manufactured using injection molding as follows. First, a substantially cylindrical ceramic molded body having, for example, a T-shape in side view is produced using injection molding. Next, the desired wiring pattern is injection molded onto the surface of the ceramic molded body. Next, a ceramic portion that covers the wiring pattern is injection molded. The structure thus obtained is subjected to a degreasing process and a firing process, and holes are formed in the surface to expose the wiring pattern, thereby producing the base 1.
- Fig. 8 is a cross-sectional view of the ceramic structure 100 according to the third embodiment.
- the substrate 1 may have a main body portion 17 and a flange portion 19 protruding from the main body portion 17.
- the main body portion 17 may have a cylindrical shape extending from the first end face 13a toward the second end face 13b.
- the main body portion 17 may be a cylindrical portion of the base 1 extending from the first end face 13a toward the second end face 13b.
- the flange portion 19 may protrude radially outward from the outer periphery of the main body portion 17.
- the base 1 according to the third embodiment may be made from a single ceramic molded body.
- the ceramics constituting the main body portion 17 and the flange portion 19 may have the same composition.
- the base 1 having the flange portion 19 may be manufactured by injection molding, similar to the base 1 according to the second embodiment. Specifically, after a ceramic molded body having a flange is injection molded, the ceramic body may be degreased and fired.
- the ceramic structure 100 can be easily attached to another member. Specifically, by fitting the flange 19 into a recess or the like provided in the other member, the ceramic structure 100 can be easily attached to the other member.
- the flange 19 may protrude from the end of the main body 17. Specifically, the flange 19 may protrude, for example, from the end of the main body 17 on the first end surface 13a side. With this configuration, when another component is located on the first end surface 13a side of the base 1, the flange 19 can be easily fitted into a recess or the like of the other component. This can further improve the attachability of the ceramic structure 100 to the other component.
- the first opening 9 may open on the surface of the flange 19.
- the first opening 9 may open on the first end face 13a of the flange 19.
- the first opening 9 may open on the end face of the flange 19 located opposite the first end face 13a.
- the first opening 9 may open on the side face 13c of the flange 19.
- Fig. 9 is a cross-sectional view of the ceramic structure 100 according to the fourth embodiment.
- the ceramic structure 100 according to the fourth embodiment may have a low-resistance member 21 located on the surface of a base 1 and having a resistance value lower than that of the base 1.
- the resistance value of the base 1 may be, for example, 1 x 10 12 ⁇ or more.
- the resistance value of the low-resistance member 21 may be, for example, 1 x 10 9 ⁇ or less.
- the low-resistance member 21 may be positioned so as to cover the side surface 13c of the base 1.
- the low-resistance member 21 may be positioned so as to cover the first end surface 13a, the second end surface 13b, and the side surface 13c of the base 1.
- the low-resistance member 21 may be a metal plating film.
- the metal may be, for example, Ni (nickel), gold (Au), etc.
- Such a plating film may be formed by electroless plating.
- a metal plating film may also be formed on the inner wall surfaces of the first cavity 11 and the second cavity 7.
- the base 1 has a flange portion 19, but this configuration is not limited thereto.
- a flange made of metal may be attached to a base 1 having a simple cylindrical shape.
- the low-resistance member 21 made of metal may form the flange portion.
- the low-resistance member 21 and the base 1 may be bonded with an adhesive.
- FIG. 10 is a cross-sectional view of the ceramic structure 100 according to the fifth embodiment.
- the base 1 having the main body portion 17 and the flange portion 19 was produced from a single ceramic molded body.
- the main body portion 17 and the flange portion 19 of the base 1 may be produced from separate ceramic molded bodies.
- the ceramics constituting the main body portion 17 and the ceramics constituting the flange portion 19 may have different compositions.
- the flange 19 may be made of a ceramic having a lower resistance than the main body 17.
- the resistance of the main body 17 may be, for example, 1 ⁇ 10 12 ⁇ or more.
- the resistance of the flange 19 may be, for example, 1 ⁇ 10 9 ⁇ or less.
- the flange 19 may be made of a ceramic containing, for example, iron oxide or titanium oxide as a conductive component.
- the main body 17 may be made of a ceramic not containing iron oxide or titanium oxide. In this way, if the flange 19 is made of, for example, a ceramic containing iron oxide, static electricity in the base 1 can be discharged to the outside from the flange 19.
- the main body 17 according to the fifth embodiment is an example of an insulating portion in the base 1.
- the flange 19 according to the fifth embodiment is an example of a low-resistance portion in the base 1.
- a ceramic molded body is made of ceramics that do not contain iron oxide, and will become the main body 17 after firing.
- the structure obtained in this way is degreased and fired to obtain the base 1.
- main component means a component that is 50% by mass or more.
- the low resistance portion of the base 1 was the flange portion 19, but the configuration of the base 1 is not limited to this.
- the low resistance portion may be provided on the surface layer of the base 1.
- the surface layer of the base 1 may be made of ceramics containing iron oxide or titanium oxide. In this way, the location where the low resistance portion is formed on the base 1 is not particularly limited.
- the present technology can be configured as follows: (1) a ceramic substrate; a wiring layer located inside the substrate; and
- the substrate is a first opening located on the surface of the base body, and a first cavity portion connected to the first opening and the wiring layer; a rod-shaped terminal having a side surface and an end surface at least a portion of which is located within the first cavity; and the wiring layer has a first surface, a second surface located opposite to the first surface, and a third surface connecting the first surface and the second surface; the terminal faces the third surface of the wiring layer in the first cavity; a longitudinal direction of the terminal is substantially parallel to the first surface within the first cavity; The terminal and the wiring layer are electrically connected.
- Ceramic structure is a first opening located on the surface of the base body, and a first cavity portion connected to the first opening and the wiring layer;
- a rod-shaped terminal having a side surface and an end surface at least a portion of which is located within the first cavity;
- the wiring layer has a first surface, a second surface located opposite to the first surface
Landscapes
- Structure Of Printed Boards (AREA)
Abstract
Description
本開示は、セラミック構造体に関する。 This disclosure relates to ceramic structures.
従来から、セラミックスからなる基体と、この基体の内部に位置する配線層とを構成要素として有する種々のセラミック構造体が利用されている。例えば、特許文献1には、内部に発熱抵抗体を有する棒状のセラミックヒータが開示されている。これらのセラミックヒータには、棒状のセラミック基体の側面に接続端子が設けられている。 Conventionally, various ceramic structures have been used that have as their constituent elements a ceramic substrate and a wiring layer located inside this substrate. For example, Patent Document 1 discloses a rod-shaped ceramic heater that has a heating resistor inside. These ceramic heaters have connection terminals on the side of the rod-shaped ceramic substrate.
本開示のセラミック構造体は、セラミックスからなる基体と、基体内の内部に位置する配線層と、を有する。基体は、表面に位置する第1開口と、第1開口と配線層とにつながる第1空洞部と、第1空洞部内に少なくとも一部が位置する側面と端面とを有する棒状の端子と、を有する。配線層は、第1面と、第1面の逆に位置する第2面と、第1面と第2面とをつなぐ第3面と、を有する。端子は、第1空洞部内で配線層の第3面と対向しており、端子の長さ方向は、第1空洞部内において第1面と略平行である。端子と、配線層とは、電気的に接続している。 The ceramic structure disclosed herein comprises a ceramic substrate and a wiring layer located inside the substrate. The substrate has a first opening located on its surface, a first cavity connecting the first opening and the wiring layer, and a rod-shaped terminal having a side surface and an end surface, at least a portion of which is located within the first cavity. The wiring layer has a first surface, a second surface located opposite the first surface, and a third surface connecting the first surface and the second surface. The terminal faces the third surface of the wiring layer within the first cavity, and the longitudinal direction of the terminal is approximately parallel to the first surface within the first cavity. The terminal and the wiring layer are electrically connected.
以下に、本開示によるセラミック構造体を実施するための形態(以下、「実施形態」と記載する)について図面を参照しつつ詳細に説明する。なお、この実施形態により本開示が限定されるものではない。また、各実施形態は、処理内容を矛盾させない範囲で適宜組み合わせることが可能である。また、以下の各実施形態において同一の部位には同一の符号を付し、重複する説明は省略される。 Below, modes for implementing the ceramic structure according to the present disclosure (hereinafter referred to as "embodiments") will be described in detail with reference to the drawings. Note that the present disclosure is not limited to these embodiments. Furthermore, the embodiments can be combined as appropriate to the extent that the processing content is not contradictory. Furthermore, the same parts in the following embodiments will be given the same reference numerals, and duplicate explanations will be omitted.
また、以下に示す実施形態では、「一定」、「直交」、「垂直」あるいは「平行」といった表現が用いられる場合があるが、これらの表現は、厳密に「一定」、「直交」、「垂直」あるいは「平行」であることを要しない。すなわち、上記した各表現は、例えば製造精度、設置精度などのずれを許容するものとする。 Furthermore, in the embodiments described below, expressions such as "constant," "orthogonal," "perpendicular," or "parallel" may be used, but these expressions do not necessarily mean "constant," "orthogonal," "perpendicular," or "parallel" in the strict sense. In other words, the above expressions allow for deviations due to, for example, manufacturing precision, installation precision, etc.
本開示は、電気接続端子の配置が改善されたセラミック構造体に関する。 The present disclosure relates to a ceramic structure with improved electrical connection terminal arrangement.
(第1実施形態)
第1実施形態に係るセラミック構造体100は、例えば、図1~図3に示すように棒状の基体1を有していてもよい。図1に示す、L1とL2とを結ぶ破線に沿った断面を図2および図3に示している。また、図1に示すL3で示した円状の破線に沿った断面を図4および図5に示している。基体1は、板状であってもよく、円柱状であってもよい。基体1は、たとえば、全長が10~100mm、幅が5~50mm程度であってもよい。
(First embodiment)
The ceramic structure 100 according to the first embodiment may have, for example, a rod-shaped substrate 1 as shown in FIGS. 1 to 3. Cross sections taken along the dashed line connecting L1 and L2 shown in FIG. 1 are shown in FIGS. 2 and 3. Cross sections taken along the circular dashed line indicated by L3 in FIG. 1 are shown in FIGS. 4 and 5. The substrate 1 may be plate-shaped or cylindrical. The substrate 1 may have, for example, a total length of about 10 to 100 mm and a width of about 5 to 50 mm.
基体1は、セラミックスからなる。例えば、基体1は、アルミナ質焼結体、ジルコニア質焼結体、窒化珪素質焼結体または窒化アルミニウム質焼結体からなるものであってもよい。図2に示すように、基体1は、内部に配線層3を有していてもよい。配線層3の材質は、例えば、銅や銀、タングステン、モリブデン、白金などの従来、配線層3として用いられているものであってもよい。 The substrate 1 is made of ceramics. For example, the substrate 1 may be made of an alumina sintered body, a zirconia sintered body, a silicon nitride sintered body, or an aluminum nitride sintered body. As shown in Figure 2, the substrate 1 may have a wiring layer 3 inside. The material of the wiring layer 3 may be, for example, copper, silver, tungsten, molybdenum, platinum, or any other metal that has traditionally been used for wiring layers 3.
配線層3は、例えば、幅が厚みよりも広い、線状の形態を有していてもよい。線状とは、ある方向に幅以上の長さで伸びている形態であってもよい。図2に示すように、配線層3は、例えば、第1面3aと、第1面3aと逆に位置する第2面3bとを有していてもよい。図2においては、第1面3aと第2面3bとをつなぐ面は第3面3cとして例示されている。 The wiring layer 3 may have a linear shape, for example, where the width is greater than the thickness. A linear shape may also mean a shape that extends in a certain direction with a length equal to or greater than the width. As shown in Figure 2, the wiring layer 3 may have, for example, a first surface 3a and a second surface 3b located opposite the first surface 3a. In Figure 2, the surface connecting the first surface 3a and the second surface 3b is illustrated as the third surface 3c.
基体1は、表面に位置する第1開口9と、第1開口9につながる第1空洞部11とを有する。図2に示すように、基体1は、第1端面13aと、第1端面13aとは逆に位置する第2端面13bとを有していてもよい。第1実施形態において、第1開口9は、第1端面13aに位置していてもよい。第1空洞部11の内壁面11aには、配線層3が露出している。図3に示すように、第1空洞部11には、端子15の少なくとも一部が位置している。端子15は、側面と端面とを有する棒状の部材であってもよい。具体的には、端子15は、第1空洞部11の内部に位置する第3端面15aと、第3端面15aの反対側に位置する第4端面15bと、第3端面15aと第4端面15bとをつなぐ側面15cとを有していてもよい。端子15は、金属線であってもよく、金属線を取り付けるためのいわゆる端子であってもよい。 The base 1 has a first opening 9 located on its surface and a first cavity 11 connected to the first opening 9. As shown in FIG. 2, the base 1 may have a first end face 13a and a second end face 13b located opposite the first end face 13a. In the first embodiment, the first opening 9 may be located at the first end face 13a. The wiring layer 3 is exposed on the inner wall surface 11a of the first cavity 11. As shown in FIG. 3, at least a portion of the terminal 15 is located in the first cavity 11. The terminal 15 may be a rod-shaped member having a side surface and an end face. Specifically, the terminal 15 may have a third end face 15a located inside the first cavity 11, a fourth end face 15b located opposite the third end face 15a, and a side face 15c connecting the third end face 15a and the fourth end face 15b. The terminal 15 may be a metal wire or a so-called terminal for attaching a metal wire.
基体1は、表面に位置する第2開口5aと、第2開口5aにつながる第2空洞部7とを有していてもよい。第1実施形態において、第2開口5aは、第1端面13aに位置していてもよい。図1~図3の例では、第2空洞部7は、貫通孔となっている。具体的には、基体1は、第2開口5aの逆に位置する第3開口5bを有していてもよい。第3開口5bは、第2端面13bに位置していてもよい。第2空洞部7は、第2開口5aと第3開口5bとにつながっていてもよい。このように、基体1は、第2空洞部7につながる第3開口5bを有していてもよい。これに限らず、第2空洞部7は、底面を有する形態であってもよい。 The base 1 may have a second opening 5a located on the surface and a second cavity 7 connected to the second opening 5a. In the first embodiment, the second opening 5a may be located on the first end surface 13a. In the examples of Figures 1 to 3, the second cavity 7 is a through-hole. Specifically, the base 1 may have a third opening 5b located opposite the second opening 5a. The third opening 5b may be located on the second end surface 13b. The second cavity 7 may be connected to the second opening 5a and the third opening 5b. In this way, the base 1 may have a third opening 5b connected to the second cavity 7. However, this is not limited to this, and the second cavity 7 may have a bottom surface.
端子15と配線層3の第3面3cとは、第1空洞部11の内部で対向している。具体的には、端子15の側面15cと配線層3の第3面3cとが、第1空洞部11の内部で対向していてもよい。端子15と配線層3とは、例えば、図示しないろう材を介して電気的に接続されていてもよい。また、端子15と配線層3とは、例えば、図示しない導電性接着剤を介して電気的に接続されていてもよい。 The terminal 15 and the third surface 3c of the wiring layer 3 face each other inside the first cavity 11. Specifically, the side surface 15c of the terminal 15 and the third surface 3c of the wiring layer 3 may face each other inside the first cavity 11. The terminal 15 and the wiring layer 3 may be electrically connected, for example, via a brazing material (not shown). The terminal 15 and the wiring layer 3 may also be electrically connected, for example, via a conductive adhesive (not shown).
なお、配線層3は、セラミック構造体100の表面に露出し、端子15と電気的に接続されていない端部を有していてもよい。配線層3がこのような端部を有するならば、セラミック構造体100を電力供給のための配線部材として利用することが可能である。 In addition, the wiring layer 3 may have ends that are exposed on the surface of the ceramic structure 100 and are not electrically connected to the terminals 15. If the wiring layer 3 has such ends, the ceramic structure 100 can be used as a wiring member for supplying power.
基体1は、第1端面13aに複数の第1開口9を有していてもよい。また、基体1は、第2端面13bにも第1開口9を有していてもよい。例えば、2つの第1開口9を有する場合には、2つの第1開口9にそれぞれつながる2つの第1空洞部11に露出する配線層3は、電気的に接続されていてもよい。 The base 1 may have multiple first openings 9 on the first end surface 13a. The base 1 may also have a first opening 9 on the second end surface 13b. For example, if the base 1 has two first openings 9, the wiring layer 3 exposed in the two first cavities 11 connected to the two first openings 9 may be electrically connected.
図2および図3には、断面において、基体1の第1端面13aと第2端面13bとを結ぶ長さ方向に複数の配線層3が整列している例が示されている。これらの配線層3は、電気的に独立していてもよい。また、全ての配線層3が電気的に接続されていてもよい。例えば、図2および図3に示す例では、配線層3が基体1の内部で螺旋状に配置されていてもよい。このように、配線層3は、第2空洞部7を取り囲んでいてもよい。 FIGS. 2 and 3 show an example in which, in a cross section, multiple wiring layers 3 are aligned in the longitudinal direction connecting the first end face 13a and the second end face 13b of the base 1. These wiring layers 3 may be electrically independent. Alternatively, all of the wiring layers 3 may be electrically connected. For example, in the example shown in FIGS. 2 and 3, the wiring layers 3 may be arranged in a spiral shape inside the base 1. In this way, the wiring layers 3 may surround the second cavity 7.
図4および図5に示すように、配線層3は基体1の長さ方向と交わるように配置されていてもよい。図4に示す例では、第1空洞部11の内壁面に配線層3が露出している。図4の例では、第1空洞部11の底面には配線層3が露出していない。これに対し、図5の例では、第1空洞部11の側面および底面の両方に配線層3が露出している。図5に示す例のように、第1空洞部11の側面および底面の両方に配線層3が露出している場合には、配線層3の露出面積がより大きくなるため、配線層3と端子15との接続信頼性が高い。具体的には、かかる場合、配線層3の第3面3cと端子15の第3端面15aおよび側面15cとが対向するため、配線層3と端子15との接触面積が大きくなり、両者の接続信頼性が向上する。また、配線層3と端子15との接続における抵抗値は小さくなる。 As shown in Figures 4 and 5, the wiring layer 3 may be arranged so as to intersect with the longitudinal direction of the base 1. In the example shown in Figure 4, the wiring layer 3 is exposed on the inner wall surface of the first cavity 11. In the example shown in Figure 4, the wiring layer 3 is not exposed on the bottom surface of the first cavity 11. In contrast, in the example shown in Figure 5, the wiring layer 3 is exposed on both the side and bottom surfaces of the first cavity 11. When the wiring layer 3 is exposed on both the side and bottom surfaces of the first cavity 11, as in the example shown in Figure 5, the exposed area of the wiring layer 3 is larger, thereby increasing the connection reliability between the wiring layer 3 and the terminal 15. Specifically, in this case, the third surface 3c of the wiring layer 3 faces the third end surface 15a and side surface 15c of the terminal 15, increasing the contact area between the wiring layer 3 and the terminal 15 and improving the connection reliability between them. In addition, the resistance value in the connection between the wiring layer 3 and the terminal 15 is reduced.
配線層3は、発熱抵抗体であってもよい。言い換えると、本開示のセラミック構造体100は、ヒータであってもよい。このような場合であると、基体1の内部に位置する第2空洞部7の内部に位置する流体を加熱することができる。また、基体1の外部も加熱することもできる。また、配線層3は、例えば、2種の異なる金属からなる配線層3を有していてもよく、その異なる金属からなる配線層3同士が基体1の内部で接続して、いわゆる熱電対の機能を有していてもよい。このような形態であると、基体1の内部に位置する第2空洞部7の内部に位置する物質の温度を測定することができる。 The wiring layer 3 may be a heating resistor. In other words, the ceramic structure 100 of the present disclosure may be a heater. In such a case, it is possible to heat the fluid located inside the second cavity 7 located inside the base 1. It is also possible to heat the outside of the base 1. Furthermore, the wiring layer 3 may have, for example, wiring layers 3 made of two different metals, and the wiring layers 3 made of these different metals may be connected inside the base 1 to function as a so-called thermocouple. In this configuration, it is possible to measure the temperature of a substance located inside the second cavity 7 located inside the base 1.
本開示のセラミック構造体100は、センサ保持体であってもよい。例えば、図6に示すように、セラミック構造体100は、基体1の表面にセンサ16を搭載していてもよい。具体的には、センサ16は、例えば基体1の第2端面13bに位置していてもよい。センサ16は、例えば温度センサ等であってもよい。また、図6の例では、基体1の第2端面13bに配線層3の端部が露出していてもよい。このような場合、配線層3の端部とセンサ16の電極部とを電気的に接続することができる。これにより、配線層3をセンサ16に対する電力供給部とすることができる。 The ceramic structure 100 of the present disclosure may be a sensor holder. For example, as shown in FIG. 6, the ceramic structure 100 may have a sensor 16 mounted on the surface of the base 1. Specifically, the sensor 16 may be located, for example, on the second end surface 13b of the base 1. The sensor 16 may be, for example, a temperature sensor. In the example of FIG. 6, the end of the wiring layer 3 may be exposed on the second end surface 13b of the base 1. In such a case, the end of the wiring layer 3 and the electrode portion of the sensor 16 can be electrically connected. This allows the wiring layer 3 to serve as a power supply for the sensor 16.
本開示のセラミック構造体100では、セラミックスからなる基体1により配線層3を保護することができる。このため、配線層3において短絡が生じにくい。また、配線層3を液体や雰囲気ガスから保護することで、配線層3の劣化を低減することができる。 In the ceramic structure 100 disclosed herein, the wiring layer 3 can be protected by the ceramic substrate 1. This makes it less likely for short circuits to occur in the wiring layer 3. Furthermore, by protecting the wiring layer 3 from liquids and atmospheric gases, deterioration of the wiring layer 3 can be reduced.
(製造方法)
本開示のセラミック構造体は、例えば、以下に示す方法で製造することができる。
(Manufacturing method)
The ceramic structure of the present disclosure can be produced, for example, by the method described below.
まず、円筒状のセラミック成形体を準備する。セラミック成形体は、例えば、アルミナ粉末とバインダーを含有していてもよい。このようなセラミック成形体は、従来周知の押し出し成形方法などを利用して作製することができる。 First, a cylindrical ceramic molded body is prepared. The ceramic molded body may contain, for example, alumina powder and a binder. Such a ceramic molded body can be produced using a conventionally known extrusion molding method.
次に、シート状のセラミック成形体を準備する。このシート状のセラミック成形体もアルミナ粉末とバインダーを含有していてもよい。そして、このシート状のセラミック成形体の一方の表面に、例えば、市販の金属導体ペーストを印刷して、焼成後に配線層となる配線パターンを形成する。 Next, a sheet-shaped ceramic compact is prepared. This sheet-shaped ceramic compact may also contain alumina powder and a binder. Then, for example, a commercially available metal conductor paste is printed on one surface of this sheet-shaped ceramic compact to form a wiring pattern that will become the wiring layer after firing.
そして、円筒状のセラミック成形体の表面に、配線パターンが形成されたシート状のセラミック成形体を巻き付ける。この時、配線パターンが円筒状のセラミック成形体の表面と接するように巻き付けるとよい。 Then, the sheet-like ceramic molded body with the wiring pattern formed on it is wrapped around the surface of the cylindrical ceramic molded body. At this time, it is preferable to wrap it so that the wiring pattern is in contact with the surface of the cylindrical ceramic molded body.
次に、円筒状のセラミック成形体の端面に穴を設け、配線パターンを露出させる。そして、脱脂、焼成工程を経て、得られた基体の端面に形成された第1空洞部に、ろう材と、棒状の端子を挿入し、ろう材が溶融する温度まで加熱することで、本開示のセラミック構造体を作製することができる。 Next, holes are drilled into the end surface of the cylindrical ceramic molded body to expose the wiring pattern. After degreasing and firing, the resulting substrate is subjected to a first cavity formed in the end surface. A brazing filler metal and a rod-shaped terminal are inserted into the cavity, and the substrate is heated to a temperature at which the brazing filler metal melts, thereby producing the ceramic structure of the present disclosure.
(第2実施形態)
次に、第2実施形態に係るセラミック構造体100の構成について、図7を参照して説明する。図7は、第2実施形態に係るセラミック構造体100の断面図である。ところで、第1実施形態では、第1開口9が基体1の第1端面13aに位置する場合の例を説明した。一方、第2実施形態では、図7に示すように、第1開口9が基体1の側面13cに位置していてもよい。ここで言う側面13cとは、基体1において第1端面13aと第2端面13bとをつなぐ面である。なお、側面13cにおける第1開口9の位置は特に限定されないが、例えば、第1開口9が基体1の第1端面13a側の側面13cに位置するならば、セラミック構造体100に対して端子15を取り付けやすい。
Second Embodiment
Next, the configuration of a ceramic structure 100 according to a second embodiment will be described with reference to FIG. 7 . FIG. 7 is a cross-sectional view of the ceramic structure 100 according to the second embodiment. In the first embodiment, an example was described in which the first opening 9 was located on the first end surface 13 a of the base 1. On the other hand, in the second embodiment, as shown in FIG. 7 , the first opening 9 may be located on the side surface 13 c of the base 1. The side surface 13 c here refers to a surface of the base 1 that connects the first end surface 13 a and the second end surface 13 b. The position of the first opening 9 on the side surface 13 c is not particularly limited. However, for example, if the first opening 9 is located on the side surface 13 c on the first end surface 13 a side of the base 1, it is easy to attach a terminal 15 to the ceramic structure 100.
第2実施形態において、基体1は、第1端面13aと第2端面13bとを結ぶ長さ方向に沿って配置された配線層3と、基体1の長さ方向と交わるように配置された配線層3とを有していてもよい。かかる場合、基体1の長さ方向に沿って配置された配線層3は、第2空洞部7を取り囲んでいてもよい。また、基体1の長さ方向と交わるように配置された配線層3は、第1空洞部11の内壁面に露出していてもよい。 In the second embodiment, the base 1 may have a wiring layer 3 arranged along the longitudinal direction connecting the first end face 13a and the second end face 13b, and a wiring layer 3 arranged so as to intersect with the longitudinal direction of the base 1. In such a case, the wiring layer 3 arranged along the longitudinal direction of the base 1 may surround the second cavity 7. Furthermore, the wiring layer 3 arranged so as to intersect with the longitudinal direction of the base 1 may be exposed on the inner wall surface of the first cavity 11.
第2実施形態に係る基体1は、射出成型法を利用して、以下のように製造されてもよい。まず、射出成型法により、例えば側面視T字形状を有する略円筒状のセラミック成形体を作製する。つづいて、上記セラミック成形体の表面に所望の配線パターンを射出成型する。つづいて、上記配線パターンを覆うセラミック部を射出成型する。このようにして得られた構造体に脱脂処理および焼成処理を行い、表面に穴を設けて配線パターンを露出させることで、基体1を作製することができる。 The base 1 according to the second embodiment may be manufactured using injection molding as follows. First, a substantially cylindrical ceramic molded body having, for example, a T-shape in side view is produced using injection molding. Next, the desired wiring pattern is injection molded onto the surface of the ceramic molded body. Next, a ceramic portion that covers the wiring pattern is injection molded. The structure thus obtained is subjected to a degreasing process and a firing process, and holes are formed in the surface to expose the wiring pattern, thereby producing the base 1.
(第3実施形態)
次に、第3実施形態に係るセラミック構造体100の構成について、図8を参照して説明する。図8は、第3実施形態に係るセラミック構造体100の断面図である。図8に示すように、第3実施形態において、基体1は、本体部17と、本体部17から突出する鍔部19とを有していてもよい。
(Third embodiment)
Next, the configuration of a ceramic structure 100 according to a third embodiment will be described with reference to Fig. 8. Fig. 8 is a cross-sectional view of the ceramic structure 100 according to the third embodiment. As shown in Fig. 8, in the third embodiment, the substrate 1 may have a main body portion 17 and a flange portion 19 protruding from the main body portion 17.
本体部17は、第1端面13a側から第2端面13b側に向かって延びた円筒形状を有していてもよい。言い換えれば、本体部17とは、基体1のうち第1端面13aから第2端面13bに向かって延びる円筒状の部位であってよい。鍔部19は、本体部17の外周から径方向外側へ向かって突出していてもよい。第3実施形態に係る基体1は、1つのセラミック成形体から作製されてもよい。言い換えれば、第3実施形態において、本体部17および鍔部19を構成するセラミックスの組成は同一であってもよい。鍔部19を有する基体1は、第2実施形態に係る基体1と同様に、射出成型法により製造されてもよい。
具体的には、鍔部を有するセラミック成形体を射出成型した後、かかるセラミック体を脱脂および焼成すればよい。
The main body portion 17 may have a cylindrical shape extending from the first end face 13a toward the second end face 13b. In other words, the main body portion 17 may be a cylindrical portion of the base 1 extending from the first end face 13a toward the second end face 13b. The flange portion 19 may protrude radially outward from the outer periphery of the main body portion 17. The base 1 according to the third embodiment may be made from a single ceramic molded body. In other words, in the third embodiment, the ceramics constituting the main body portion 17 and the flange portion 19 may have the same composition. The base 1 having the flange portion 19 may be manufactured by injection molding, similar to the base 1 according to the second embodiment.
Specifically, after a ceramic molded body having a flange is injection molded, the ceramic body may be degreased and fired.
基体1が鍔部19を有するならば、セラミック構造体100を他部材に対して容易に取り付けることができる。具体的には、他部材に設けられた凹部等に鍔部19を嵌合することで、セラミック構造体100を他部材に対して容易に取り付けることができる。 If the base 1 has a flange 19, the ceramic structure 100 can be easily attached to another member. Specifically, by fitting the flange 19 into a recess or the like provided in the other member, the ceramic structure 100 can be easily attached to the other member.
鍔部19は、本体部17の端部から突出していてもよい。具体的には、鍔部19は、例えば、本体部17の第1端面13a側の端部から突出していてもよい。かかる構成とすることで、基体1の第1端面13a側に他部材が位置する場合において、鍔部19を他部材の凹部等に嵌合しやすくすることができる。したがって、他部材に対するセラミック構造体100の取り付け性をより高めることができる。 The flange 19 may protrude from the end of the main body 17. Specifically, the flange 19 may protrude, for example, from the end of the main body 17 on the first end surface 13a side. With this configuration, when another component is located on the first end surface 13a side of the base 1, the flange 19 can be easily fitted into a recess or the like of the other component. This can further improve the attachability of the ceramic structure 100 to the other component.
なお、基体1が鍔部19を有する場合、第1開口9は、鍔部19の表面に開口してもよい。例えば、第1開口9は、鍔部19における第1端面13aに開口していてもよい。または、第1開口9は、鍔部19において第1端面13aと反対側に位置する端面に開口していてもよい。または、第1開口9は、鍔部19における側面13cに開口していてもよい。 If the base 1 has a flange 19, the first opening 9 may open on the surface of the flange 19. For example, the first opening 9 may open on the first end face 13a of the flange 19. Alternatively, the first opening 9 may open on the end face of the flange 19 located opposite the first end face 13a. Alternatively, the first opening 9 may open on the side face 13c of the flange 19.
(第4実施形態)
次に、第4実施形態に係るセラミック構造体100の構成について、図9を参照して説明する。図9は、第4実施形態に係るセラミック構造体100の断面図である。第4実施形態に係るセラミック構造体100は、基体1の表面に位置し、抵抗値が基体1よりも小さい低抵抗部材21を有していてもよい。具体的には、基体1の抵抗値は、例えば1×1012Ω以上であってもよい。低抵抗部材21の抵抗値は、例えば1×109Ω以下であってもよい。
(Fourth embodiment)
Next, the configuration of a ceramic structure 100 according to a fourth embodiment will be described with reference to Fig. 9. Fig. 9 is a cross-sectional view of the ceramic structure 100 according to the fourth embodiment. The ceramic structure 100 according to the fourth embodiment may have a low-resistance member 21 located on the surface of a base 1 and having a resistance value lower than that of the base 1. Specifically, the resistance value of the base 1 may be, for example, 1 x 10 12 Ω or more. The resistance value of the low-resistance member 21 may be, for example, 1 x 10 9 Ω or less.
図9に示すように、低抵抗部材21は、基体1の側面13cを覆うように位置していてもよい。または、低抵抗部材21は、基体1の第1端面13a、第2端面13bおよび側面13cを覆うように位置していてもよい。 As shown in FIG. 9, the low-resistance member 21 may be positioned so as to cover the side surface 13c of the base 1. Alternatively, the low-resistance member 21 may be positioned so as to cover the first end surface 13a, the second end surface 13b, and the side surface 13c of the base 1.
低抵抗部材21は、金属のメッキ膜であってもよい。金属は、例えば、Ni(ニッケル)、金(Au)等であってもよい。かかるメッキ膜は、無電解メッキによって形成されてもよい。セラミック構造体100が低抵抗部材21を有する構成によれば、基体1が静電気を帯びた場合に、かかる静電気を基体1の外部へ放電させることができる。 The low-resistance member 21 may be a metal plating film. The metal may be, for example, Ni (nickel), gold (Au), etc. Such a plating film may be formed by electroless plating. When the ceramic structure 100 is configured to include the low-resistance member 21, if the base body 1 becomes charged with static electricity, the static electricity can be discharged to the outside of the base body 1.
なお、第1空洞部11および第2空洞部7の内壁面にも金属のメッキ膜を形成してよい。かかる構成によれば、基体1の静電気を第1空洞部11および第2空洞部7の内壁面からも放電させることができるため、より好適に基体1の静電気を基体1の外部へと放電させることができる。 In addition, a metal plating film may also be formed on the inner wall surfaces of the first cavity 11 and the second cavity 7. With this configuration, static electricity from the base 1 can be discharged from the inner wall surfaces of the first cavity 11 and the second cavity 7 as well, so that static electricity from the base 1 can be more effectively discharged to the outside of the base 1.
なお、第4実施形態では、基体1が鍔部19を有する場合の例を示しているが、かかる構成に限らず、例えば、単純な円筒形状を有する基体1に金属からなる鍔を取り付けてもよい。言い換えれば、セラミック構造体100において、金属からなる低抵抗部材21が鍔部を形成していてもよい。かかる場合、低抵抗部材21と基体1とは、接着材により接着されてもよい。 In the fourth embodiment, an example is shown in which the base 1 has a flange portion 19, but this configuration is not limited thereto. For example, a flange made of metal may be attached to a base 1 having a simple cylindrical shape. In other words, in the ceramic structure 100, the low-resistance member 21 made of metal may form the flange portion. In such a case, the low-resistance member 21 and the base 1 may be bonded with an adhesive.
(第5実施形態)
次に、第5実施形態に係るセラミック構造体100の構成について、図10を参照して説明する。図10は、第5実施形態に係るセラミック構造体100の断面図である。ところで、第3実施形態および第4実施形態では、本体部17および鍔部19を有する基体1が、1つのセラミック成形体から作製される場合の例を説明した。一方、第5実施形態では、基体1の本体部17と鍔部19とが別体のセラミック成形体から作製されてもよい。言い換えれば、第5実施形態においては、本体部17を構成するセラミックスの組成と鍔部19を構成するセラミックスの組成とが異なっていてもよい。
Fifth Embodiment
Next, the configuration of a ceramic structure 100 according to a fifth embodiment will be described with reference to FIG. 10 . FIG. 10 is a cross-sectional view of the ceramic structure 100 according to the fifth embodiment. In the third and fourth embodiments, an example was described in which the base 1 having the main body portion 17 and the flange portion 19 was produced from a single ceramic molded body. On the other hand, in the fifth embodiment, the main body portion 17 and the flange portion 19 of the base 1 may be produced from separate ceramic molded bodies. In other words, in the fifth embodiment, the ceramics constituting the main body portion 17 and the ceramics constituting the flange portion 19 may have different compositions.
第5実施形態において、鍔部19は、本体部17よりも抵抗値が小さいセラミックスで構成されてもよい。具体的には、第5実施形態において、本体部17の抵抗値は、例えば1×1012Ω以上であってもよい。また、鍔部19の抵抗値は、例えば1×109Ω以下であってもよい。鍔部19は、例えば導電性成分として酸化鉄や酸化チタンを含むセラミックスで構成されてもよい。かかる場合、本体部17は、酸化鉄や酸化チタンを含まないセラミックスで構成されてよい。このように、鍔部19が例えば酸化鉄を含むセラミックスで構成されるならば、基体1の静電気を鍔部19から外部へと放電することができる。なお、第5実施形態に係る本体部17は、基体1における絶縁部の一例である。また、第5実施形態に係る鍔部19は、基体1における低抵抗部の一例である。 In the fifth embodiment, the flange 19 may be made of a ceramic having a lower resistance than the main body 17. Specifically, in the fifth embodiment, the resistance of the main body 17 may be, for example, 1×10 12 Ω or more. Furthermore, the resistance of the flange 19 may be, for example, 1×10 9 Ω or less. The flange 19 may be made of a ceramic containing, for example, iron oxide or titanium oxide as a conductive component. In such a case, the main body 17 may be made of a ceramic not containing iron oxide or titanium oxide. In this way, if the flange 19 is made of, for example, a ceramic containing iron oxide, static electricity in the base 1 can be discharged to the outside from the flange 19. The main body 17 according to the fifth embodiment is an example of an insulating portion in the base 1. The flange 19 according to the fifth embodiment is an example of a low-resistance portion in the base 1.
上記構成を有する基体1を作製するには、まず、酸化鉄を含まないセラミックスからなり、焼成後に本体部17となるセラミック成形体を作製する。つづいて、かかるセラミック成形体の表面に対して、酸化鉄や酸化チタンを含むセラミックスからなり、焼成後に鍔部19となるセラミック成形部を射出成型する。このようにして得られた構造体を脱脂および焼成すれば、基体1を得ることができる。なお、本体部17と鍔部19が同じ主成分であるならば、焼成時に一体化することが容易となる。ここで、主成分とは、50質量%以上の成分を意味する。 To produce the base 1 having the above configuration, first, a ceramic molded body is made of ceramics that do not contain iron oxide, and will become the main body 17 after firing. Next, a ceramic molded part made of ceramics that contain iron oxide or titanium oxide, and will become the flange 19 after firing, is injection molded onto the surface of this ceramic molded body. The structure obtained in this way is degreased and fired to obtain the base 1. Note that if the main body 17 and flange 19 have the same main component, they can be easily integrated during firing. Here, main component means a component that is 50% by mass or more.
なお、第5実施形態では、基体1における低抵抗部が鍔部19である場合の例を説明したが、基体1の構成はこれに限定されない。例えば、基体1の表層に低抵抗部を設けてもよい。かかる場合、基体1の表層を酸化鉄や酸化チタンを含むセラミックスにより構成してもよい。このように、基体1において低抵抗部が形成される箇所は、特に限定されない。 In the fifth embodiment, an example was described in which the low resistance portion of the base 1 was the flange portion 19, but the configuration of the base 1 is not limited to this. For example, the low resistance portion may be provided on the surface layer of the base 1. In such a case, the surface layer of the base 1 may be made of ceramics containing iron oxide or titanium oxide. In this way, the location where the low resistance portion is formed on the base 1 is not particularly limited.
さらなる効果や別の実施形態は、当業者によって容易に導き出すことができる。このため、本発明のより広範な態様は、以上のように表しかつ記述した特定の詳細および代表的な実施形態に限定されるものではない。したがって、添付の請求の範囲およびその均等物によって定義される総括的な発明の概念の精神又は範囲から逸脱することなく、様々な変更が可能である。 Further advantages and alternative embodiments may readily occur to those skilled in the art. Therefore, the invention in its broader aspects is not limited to the specific details and representative embodiments shown and described above. Accordingly, various modifications may be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.
なお、本技術は以下のような構成を取ることができる。
(1)
セラミックスからなる基体と、
該基体内の内部に位置する配線層と、
を有し、
前記基体は、
前記基体の表面に位置する第1開口と、該第1開口と前記配線層とにつながる第1空洞部と、
該第1空洞部内に少なくとも一部が位置する側面と端面とを有する棒状の端子と、
を有し、
前記配線層は、第1面と、該第1面の逆に位置する第2面と、前記第1面と前記第2面とをつなぐ第3面と、を有し、
前記端子は、前記第1空洞部内で前記配線層の前記第3面と対向しており、
前記端子の長さ方向は、前記第1空洞部内において前記第1面と略平行であり、
前記端子と、前記配線層とは、電気的に接続している、
セラミック構造体。
(2)
前記端子は、前記端面が、前記第1空洞部内で前記配線層の前記第3面と対向している、前記(1)に記載のセラミック構造体。
(3)
前記基体は、前記基体の表面に位置する第2開口と、該第2開口につながる第2空洞部とをさらに有する、前記(1)または(2)に記載のセラミック構造体。
(4)
前記配線層は、前記第2空洞部を取り囲んでいる、前記(3)に記載のセラミック構造体。
(5)
前記基体は、前記第2空洞部につながる第3開口を有する、前記(3)または(4)に記載のセラミック構造体。
(6)
前記基体は、本体部と、該本体部から突出する鍔部とを有する、前記(1)~(5)のいずれか一つに記載のセラミック構造体。
(7)
前記鍔部は、前記本体部の端部から突出している、前記(6)に記載のセラミック構造体。
(8)
前記基体は、絶縁部と、前記絶縁部よりも抵抗値が小さい低抵抗部とを有する、前記(1)~(7)のいずれか一つに記載のセラミック構造体。
(9)
前記基体の表面に位置する低抵抗部材を有し、
前記低抵抗部材の抵抗値は、前記基体の抵抗値よりも小さい、前記(1)~(7)のいずれか一つに記載のセラミック構造体。
(10)
前記セラミック構造体は、ヒータであり、
前記配線層は、発熱抵抗体である、前記(1)~(9)のいずれか一つに記載のセラミック構造体。
(11)
前記セラミック構造体は、センサを搭載するセンサ保持体であり、
前記配線層は、前記センサに電気的に接続される、前記(1)~(9)のいずれか一つに記載のセラミック構造体。
The present technology can be configured as follows:
(1)
a ceramic substrate;
a wiring layer located inside the substrate;
and
The substrate is
a first opening located on the surface of the base body, and a first cavity portion connected to the first opening and the wiring layer;
a rod-shaped terminal having a side surface and an end surface at least a portion of which is located within the first cavity;
and
the wiring layer has a first surface, a second surface located opposite to the first surface, and a third surface connecting the first surface and the second surface;
the terminal faces the third surface of the wiring layer in the first cavity;
a longitudinal direction of the terminal is substantially parallel to the first surface within the first cavity;
The terminal and the wiring layer are electrically connected.
Ceramic structure.
(2)
The ceramic structure according to (1), wherein the end surface of the terminal faces the third surface of the wiring layer within the first cavity.
(3)
The ceramic structure according to (1) or (2), wherein the substrate further has a second opening located on the surface of the substrate and a second cavity portion communicating with the second opening.
(4)
The ceramic structure according to (3), wherein the wiring layer surrounds the second cavity.
(5)
The ceramic structure according to (3) or (4), wherein the substrate has a third opening communicating with the second cavity.
(6)
The ceramic structure according to any one of (1) to (5), wherein the substrate has a main body and a flange protruding from the main body.
(7)
The ceramic structure according to (6), wherein the flange portion protrudes from an end portion of the main body portion.
(8)
The ceramic structure according to any one of (1) to (7), wherein the substrate has an insulating portion and a low-resistance portion having a resistance value lower than that of the insulating portion.
(9)
a low resistance member located on the surface of the substrate;
The ceramic structure according to any one of (1) to (7), wherein the resistance value of the low resistance member is smaller than the resistance value of the base.
(10)
the ceramic structure is a heater,
The ceramic structure according to any one of (1) to (9), wherein the wiring layer is a heating resistor.
(11)
the ceramic structure is a sensor holder on which a sensor is mounted,
The ceramic structure according to any one of (1) to (9), wherein the wiring layer is electrically connected to the sensor.
1 基体
3 配線層
5a 第2開口
5b 第3開口
7 第2空洞部
9 第1開口
11 第1空洞部
11a 第1空洞部の内壁面
13a 第1端面
13b 第2端面
13c 側面
15 端子
15a 第3端面
15b 第4端面
15c 側面
16 センサ
17 本体部
19 鍔部
21 低抵抗部材
100 セラミック構造体、ヒータ
1 Base 3 Wiring layer 5a Second opening 5b Third opening 7 Second cavity 9 First opening 11 First cavity 11a Inner wall surface 13a of first cavity First end surface 13b Second end surface 13c Side surface 15 Terminal 15a Third end surface 15b Fourth end surface 15c Side surface 16 Sensor 17 Main body 19 Flange 21 Low resistance member 100 Ceramic structure, heater
Claims (11)
該基体内の内部に位置する配線層と、
を有し、
前記基体は、
前記基体の表面に位置する第1開口と、該第1開口と前記配線層とにつながる第1空洞部と、
該第1空洞部内に少なくとも一部が位置する側面と端面とを有する棒状の端子と、
を有し、
前記配線層は、第1面と、該第1面の逆に位置する第2面と、前記第1面と前記第2面とをつなぐ第3面と、を有し、
前記端子は、前記第1空洞部内で前記配線層の前記第3面と対向しており、
前記端子の長さ方向は、前記第1空洞部内において前記第1面と略平行であり、
前記端子と、前記配線層とは、電気的に接続している、
セラミック構造体。 a ceramic substrate;
a wiring layer located inside the substrate;
and
The substrate is
a first opening located on the surface of the base body, and a first cavity portion connected to the first opening and the wiring layer;
a rod-shaped terminal having a side surface and an end surface at least a portion of which is located within the first cavity;
and
the wiring layer has a first surface, a second surface located opposite to the first surface, and a third surface connecting the first surface and the second surface;
the terminal faces the third surface of the wiring layer in the first cavity;
a longitudinal direction of the terminal is substantially parallel to the first surface within the first cavity;
The terminal and the wiring layer are electrically connected.
Ceramic structure.
前記低抵抗部材の抵抗値は、前記基体の抵抗値よりも小さい、請求項1~7のいずれか一つに記載のセラミック構造体。 a low resistance member located on the surface of the substrate;
8. The ceramic structure according to claim 1, wherein the resistance value of said low resistance member is lower than the resistance value of said base body.
前記配線層は、発熱抵抗体である、請求項1~9のいずれか一つに記載のセラミック構造体。 the ceramic structure is a heater,
10. The ceramic structure according to claim 1, wherein the wiring layer is a heating resistor.
前記配線層は、前記センサに電気的に接続される、請求項1~9のいずれか一つに記載のセラミック構造体。 the ceramic structure is a sensor holder on which a sensor is mounted,
10. The ceramic structure according to claim 1, wherein the wiring layer is electrically connected to the sensor.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024-082133 | 2024-05-20 | ||
| JP2024082133 | 2024-05-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2025243995A1 true WO2025243995A1 (en) | 2025-11-27 |
Family
ID=97795481
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2025/018087 Pending WO2025243995A1 (en) | 2024-05-20 | 2025-05-19 | Ceramic structure |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2025243995A1 (en) |
-
2025
- 2025-05-19 WO PCT/JP2025/018087 patent/WO2025243995A1/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100497016B1 (en) | A heating apparatus | |
| US6241146B1 (en) | Process for manufacturing a sensor arrangement for temperature measurement | |
| KR102029225B1 (en) | Ceramic heater for electronic cigarette and manufacturing method for the same | |
| CN104797914B (en) | Temperature sensor system and method for manufacturing a temperature sensor system | |
| JP7525569B2 (en) | Heat exchange unit and cleaning device equipped with same | |
| US4401065A (en) | Glow plugs for use in diesel engines | |
| US4929813A (en) | Glow plug for diesel engine | |
| WO2025243995A1 (en) | Ceramic structure | |
| JP3886699B2 (en) | Glow plug and manufacturing method thereof | |
| KR100840796B1 (en) | Terminal for Ceramic Heating Element | |
| EP3064834B1 (en) | Heater and glow plug | |
| US4068205A (en) | Resistance element for a resistance thermometer | |
| JP2752649B2 (en) | Ceramic heater | |
| JP4641006B2 (en) | Ceramic joined body and ceramic heater | |
| GB2068126A (en) | Oxygen sensor mounting | |
| JPH09245946A (en) | Ceramic heater | |
| JP2018018671A (en) | heater | |
| EP3432681B1 (en) | Ceramic heater | |
| CN112314051B (en) | Heater and glow plug provided with same | |
| JP4487825B2 (en) | Temperature detection element | |
| JPS59230285A (en) | Ceramic heater rod | |
| CN114175851B (en) | Ceramic heater with shaft | |
| JP2000030844A (en) | Ceramic heater | |
| WO2000026995A1 (en) | Connection structure of electric lead-in terminal | |
| JPH10312903A (en) | Temperature sensor |