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WO2025102540A1 - 双端型eml coc组件 - Google Patents

双端型eml coc组件 Download PDF

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Publication number
WO2025102540A1
WO2025102540A1 PCT/CN2024/074621 CN2024074621W WO2025102540A1 WO 2025102540 A1 WO2025102540 A1 WO 2025102540A1 CN 2024074621 W CN2024074621 W CN 2024074621W WO 2025102540 A1 WO2025102540 A1 WO 2025102540A1
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WO
WIPO (PCT)
Prior art keywords
signal line
pin pad
frequency
eml
output
Prior art date
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Pending
Application number
PCT/CN2024/074621
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English (en)
French (fr)
Inventor
胡百泉
杨辉
章旭侬
刘海霞
张锐
马子琦
李林科
吴天书
杨现文
张健
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Wuhan Linktel Technologies Co Ltd
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Wuhan Linktel Technologies Co Ltd
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Publication of WO2025102540A1 publication Critical patent/WO2025102540A1/zh
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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H10W20/40—
    • H10W70/60—
    • H10W74/10—

Definitions

  • the present invention relates to the field of optical module technology, and in particular to a double-ended EML COC component.
  • the transmitting device used in optical communication is one of the core components of the optical module
  • the COC (Chip On Carrier) component is one of the core components of the transmitting device.
  • the structure and performance of the COC component play a very critical role in the high-frequency performance and thermal performance of the optical device and optical module.
  • high-speed optical modules and optical modules with long transmission distances such as 400G, 800G and other high-speed optical modules.
  • 400G, 800G and other high-speed optical modules use COC components with EML (Electro-absorption Modulated Laser) lasers as the core.
  • EML laser chips are widely used due to their good spectral characteristics and chirp characteristics.
  • the high-frequency pin pad is electrically interconnected with the high-frequency components in the optical device (such as ceramic substrates, TO bases, BOX ceramic parts) through good conductors such as gold wires, forming a GSG (Ground, Signal, Ground) type high-frequency transmission signal transmission structure, such as patents CN113552674A, CN217718170U, CN202310590348.X, US16555363, etc. This structure is suitable for the transmission of most high-frequency signals.
  • the COC component (including the EML laser chip) is used in combination with the high-frequency driver chip (Driver chip, DSP chip) on the PCBA in the optical module component, such as CN112505855A.
  • the high-frequency driver chip Driver chip, DSP chip
  • the high-frequency performance of this single-ended COC component cannot meet the use of the optical module.
  • the double-ended EML COC component can provide better high-frequency transmission performance and has a better performance match with the high-frequency driver chip.
  • This patent is a double-ended type, but the other end (5015 port) in the structure is too simple, and the factor of equal length of differential signal line transmission distance is not considered, and the signal matching is poor.
  • the main purpose of the present invention is to provide a double-ended EML COC component, aiming to solve the technical problems of the existing COC components such as poor matching with high-frequency driver chips and poor signal matching.
  • the present invention provides a double-ended EML COC component, comprising:
  • a ceramic substrate on which a gold-tin eutectic region, a first common ground region, a second common ground region, a third common ground region, a first signal line, a second signal line, a first matching resistor, a second matching resistor, a high-frequency pin pad, a laser pin pad, a first signal line gap, a second signal line gap, a third signal line gap, an output ground pin plate, a high-frequency signal line output pin plate, a via and a substrate are provided; wherein the first common ground region, the second common ground region and the third common ground region are interconnected regions; the first signal line and the second signal line are designed in parallel, and each signal line includes one high-frequency signal line output pin plate;
  • An EML chip is located directly above the AuSn eutectic region
  • a filter capacitor is located in the first common grounding region, and there is a gap between the filter capacitor and the gold-tin eutectic region.
  • the first signal line and the second signal line are both in a straight line pattern, and the signal paths of the first signal line and the second signal line extend along a first direction;
  • the third common ground area, the second signal line gap, the second signal line, the second matching resistor, the third signal line gap, the second common ground area, the first signal line gap, the first signal line, the first common ground area, the laser pin pad, the first matching resistor and the high-frequency pin pad are arranged in sequence.
  • the EML chip includes a high-frequency pin pad, a laser pad, a first light-emitting surface, and a second light-emitting surface; the EML chip is provided with adjacent EAM regions and DFB regions; wherein,
  • the EAM region and the DFB region are arranged sequentially along the first direction;
  • the high-frequency pin pad and the first light-emitting surface are located in the EAM region, and the laser pad and the second light-emitting surface are located in the DFB region.
  • the output ground pin pad includes a first output GND pin pad, a second output GND pin pad, and a third output GND pin pad;
  • the first output GND pin pad, the second output GND pin pad, the third output GND pin pad, the high-frequency signal line output pin pad and the laser pin pad are all located on the other side of the substrate opposite to the EML chip, serving as electrical input and output interfaces of the double-ended EML COC component.
  • the first common ground region, the second common ground region, and the third common ground region The common grounding area is located in the outer edge area, and surrounds the second signal line gap, the second signal line, the second matching resistor, the third signal line gap, the first signal line gap and the first signal line in a semi-enclosed manner;
  • the gold-tin eutectic region is arranged on the upper surface of the first common grounding region and is higher than the first common grounding region;
  • the first common ground area, the second common ground area, the third common ground area, the first signal line, the second signal line, the first matching resistor, the second matching resistor, the high-frequency pin pad, the laser pin pad, the first signal line gap, the second signal line gap, the third signal line gap, the first output GND pin pad, the second output GND pin pad, the third output GND pin pad and the high-frequency signal line output pin pad are all located in the same plane and are all located on the upper surface of the substrate.
  • the slit width of the second signal line, the slit width of the third signal line, the line width of the second signal line, the thickness and dielectric constant of the substrate, the intermediate reference ground and the common ground constitute a first single-ended coplanar waveguide structure to form a first characteristic impedance, and the first characteristic impedance is 50 ohms;
  • the slit width of the first signal line, the line width of the first signal line, the thickness and dielectric constant of the substrate, the intermediate reference ground and the common ground constitute a second single-ended coplanar waveguide structure to form a second characteristic impedance, and the second characteristic impedance is 50 ohms.
  • the characteristic impedance of the driving chip of the EML chip is 100 ohms
  • the first matching resistor and the second matching resistor respectively use a single-ended impedance of 50 ohms and form a differential of 100 ohms.
  • the output ground pin pad includes a fourth output GND pin pad and a fifth output GND pin pad; wherein,
  • the fourth output GND pin pad, the fifth output GND pin pad, the high-frequency signal line output pin pad and the laser pin pad are all located on the other side of the substrate opposite to the EML chip, serving as electrical input and output interfaces of the double-ended EML COC component.
  • the first common ground region, the second common ground region, and the third common ground region are located in the outer edge region, and surround the second signal line gap, the second signal line, the second matching resistor, the third signal line gap, the first signal line gap, and the first signal line in a semi-enclosed manner;
  • the AuSn eutectic region is disposed on the upper surface of the first common grounding region and is higher than the a first common grounding area;
  • the first common ground area, the second common ground area, the third common ground area, the first signal line, the second signal line, the first matching resistor, the second matching resistor, the high-frequency pin pad, the laser pin pad, the first signal line gap, the second signal line gap, the third signal line gap, the fourth output GND pin pad, the fifth output GND pin pad and the high-frequency signal line output pin pad are all located in the same plane and are all located on the upper surface of the substrate.
  • the fourth output GND pin pad and the fifth output GND pin pad, the high-frequency signal line output pin pad, and the second signal line slot and the third signal line slot together constitute a differential coplanar waveguide structure.
  • the present invention proposes a double-terminal EML COC component, comprising: a ceramic substrate, on which a gold-tin eutectic area, a first common grounding area, a second common grounding area, a third common grounding area, a first signal line, a second signal line, a first matching resistor, a second matching resistor, a high-frequency pin pad, a laser pin pad, a first signal line gap, a second signal line gap, a third signal line gap, an output grounding pin pad, a high-frequency signal line output pin pad, a via and a substrate are provided; wherein the first common grounding area, the second common grounding area and the third common grounding area are interconnected areas; the first signal line and the second signal line are designed in parallel, and each signal line includes one high-frequency signal line output pin pad; an EML chip is located directly above the gold-tin eutectic area; a filter capacitor is located in the first common grounding area, and there is a gap between the filter capacitor and
  • the present invention designs a first signal line and a second signal line in parallel next to the EML chip pins, and each signal line includes a high-frequency signal line output pin plate to form a double-ended differential COC component, thereby improving the high-frequency signal integrity of the EML component, further improving the bandwidth of the EML component, and solving the technical problems of the existing COC component, such as poor matching with the high-frequency driver chip and poor signal matching.
  • FIG1 is a schematic diagram of the structure of a GSGSG double-ended EML COC component according to an embodiment of the present invention
  • FIG2 is a schematic diagram of an EML chip of a double-ended EML COC component according to an embodiment of the present invention
  • FIG3 is a schematic diagram of a GSGSG double-terminal substrate according to an embodiment of the present invention.
  • FIG4 is a schematic diagram of the cross-sectional structure of a substrate of a double-ended EML COC component according to an embodiment of the present invention.
  • FIG. 5 is a schematic diagram of the interconnection between the GSGSG COC component and the external electrical interface according to an embodiment of the present invention
  • FIG6 is a simplified circuit diagram of the interconnection between the GSGSG COC component and the external electrical interface according to an embodiment of the present invention
  • FIG. 7 is a schematic diagram of the interconnection between a COC component with a DC-block capacitor and an external electrical interface according to an embodiment of the present invention
  • FIG8 is a simplified circuit diagram of the interconnection between a COC component with a DC-blcok capacitor and an external electrical interface according to an embodiment of the present invention
  • FIG9 is a schematic diagram of a bandwidth simulation curve of a COC component with GSGSG and an external electrical interface according to an embodiment of the present invention.
  • FIG10 is a schematic diagram of a GSSG double-ended EML COC assembly according to an embodiment of the present invention.
  • FIG12 is a schematic diagram of the interconnection between the GSSG COC component and the external electrical interface according to an embodiment of the present invention.
  • Figure 13 is a simplified circuit diagram of the interconnection between the GSSG COC component and the external electrical interface involved in an embodiment of the present invention.
  • the present invention proposes a double-ended EML COC component.
  • FIG. 1 is a structural schematic diagram of a double-ended EML COC component involved in an embodiment of the present invention.
  • the double-ended EML COC component comprises:
  • a ceramic substrate 102 on which a gold-tin eutectic region 301, a first common grounding region 302-1, a second common grounding region 302-2, a third common grounding region 302-3, a first signal line, a second signal line, a first matching resistor, a second matching resistor, a high-frequency pin pad, a laser pin pad, a first signal line gap, a second signal line gap, a third signal line gap, an output grounding pin plate, a high-frequency signal line output pin plate, a via and a substrate are provided; wherein the first common grounding region, the second common grounding region and the third common grounding region are interconnected regions; the first signal line and the second signal line are designed in parallel, and each signal line includes one high-frequency signal line output pin plate;
  • the EML chip 101 is located directly above the AuSn eutectic region 301;
  • the filter capacitor 103 is located in the first common grounding region, and there is a gap between the filter capacitor and the gold-tin eutectic region.
  • the present embodiment provides a double-ended EML (Electro-absorption Modulated Laser) COC (Chip On Carrier) component, also known as a differential EML COC component.
  • the EML is arranged on a ceramic carrier, and a high-frequency trace is arranged on the upper surface of the ceramic carrier.
  • the high-frequency trace adopts a pin distribution method such as GSGSG (Ground, Signal, Ground, Signal, Ground), GSSG (Ground, Signal, Signal, Ground), and a pin pad is arranged at the end of the ceramic carrier to form a double-ended distributed high-frequency signal line structure, which has the advantages of high bandwidth, excellent high-frequency signal integrity, low cost, simple structure, high reliability, etc.
  • This embodiment is described by taking the first signal line 303 as a high-frequency positive signal line and the second signal line as a high-frequency negative signal line as an example.
  • the high-frequency routing adopts the pin distribution method of GSGSG, GSSG, etc., and the GSGSG type COC component and the GSSG type COC component are specifically described below.
  • Embodiment 1 GSGSG type COC assembly:
  • the filter capacitor 103 is provided on the upper surface of the first common ground region 302-1 (common GND) and the area directly below as shown in FIG1 , and is spaced a certain distance from the gold-tin eutectic region 301, and the filter capacitor 103 is fixed by gold-tin eutectic welding or conductive adhesive bonding.
  • an MPD backlight chip (not shown in the figure) is arranged on the right side of the rear light-emitting surface 204 of the EML chip 101 and on the upper surface of the first common ground area 302-1 (common GND), and the MPD backlight chip is fixed by gold-tin eutectic soldering or conductive adhesive bonding.
  • the EML chip 101 includes a high-frequency pin pad, a laser pad, a first light-emitting surface, and a second light-emitting surface; the EML chip is provided with adjacent EAM regions and DFB regions; wherein,
  • the EAM region and the DFB region are arranged sequentially along the first direction;
  • the high-frequency pin pad and the first light-emitting surface are located in the EAM region, and the laser pad and the second light-emitting surface are located in the DFB region.
  • the EML chip 101 is a rectangular parallelepiped, including a high-frequency pin plate 201, a laser pad 202, a first light-emitting surface, i.e., a front light-emitting surface 203, and a second light-emitting surface, i.e., a rear light-emitting surface 204.
  • the EML chip includes an electroabsorption modulator (EAM) region and a distributed feedback laser (DFB) region.
  • EAM electroabsorption modulator
  • DFB distributed feedback laser
  • the dotted line 205 is used as a dividing line, with the EAM region on the left and the DFB region on the right.
  • the ceramic substrate 102 includes a gold-tin eutectic region 301, a common GND, namely a first common grounding region 302-1, a second common grounding region 302-2, a third common grounding region 302-3, a high-frequency positive signal line 303, a high-frequency negative signal line 304, a first matching resistor 305, a second matching resistor 306, a high-frequency pin pad (307, 308), a laser pin pad 309, and a signal line seam.
  • a gold-tin eutectic region 301 namely a first common grounding region 302-1, a second common grounding region 302-2, a third common grounding region 302-3, a high-frequency positive signal line 303, a high-frequency negative signal line 304, a first matching resistor 305, a second matching resistor 306, a high-frequency pin pad (307, 308), a laser pin pad 309, and a signal line seam.
  • the gaps are the first signal line gap 310, the second signal line gap 311-1 and the third signal line gap 311-2, the output ground pin pads are the output GND pin pads (312-1, 312-2, 312-3), the high-frequency signal line output pin pads (313, 314), the via 315 and the substrate 316.
  • the common GND namely the first common grounding area 302-1, the second common grounding area 302-2, and the third common grounding area 302-3, are interconnected areas.
  • the output ground pin pad includes a first output GND pin pad, a second output GND pin pad, and a third output GND pin pad;
  • the first signal line and the second signal line both adopt a straight line pattern, and the signal paths of the first signal line and the second signal line extend along a first direction;
  • the third common ground area, the second signal line gap, the second signal line, the second matching resistor, the third signal line gap, the second common ground area, the first signal line gap, the first signal line, the first common ground area, the laser pin pad, the first matching resistor and the high-frequency pin pad are arranged in sequence.
  • the X direction in Figure 3 is the first direction
  • the Y direction is the second direction.
  • they are, in sequence, the third common grounding area 302-3 (common GND), the second signal line gap 311-1, the second signal line, i.e., the high-frequency negative signal line 304 and the second matching resistor 306, the third signal line gap 311-2, the second common grounding area 302-2 (common GND), the first signal line gap 310, the first signal line, i.e., the high-frequency positive signal line 303, the first common grounding area 302-1 (common GND), the laser pin pad 309, the first matching resistor 305 and the high-frequency pin pad 307.
  • the common GND (302-1, 302-2, 302-3) is located in the outer edge area, and is in a semi-enclosed manner, surrounding the second signal line gap 311-1, the high-frequency negative signal line 304 and the second matching resistor 306, the third signal line gap 311-2, the first signal line gap 310 and the high-frequency positive signal line 303.
  • the gold-tin eutectic region 301 is set on the upper surface of the first common grounding region 302-1 (common GND) and is higher than the first common grounding region 302-1 (common GND).
  • the high-frequency positive signal line 303, the high-frequency negative signal line 304, the first matching resistor 305, the second matching resistor 306, the high-frequency pin pads 307, 308, the laser pin pad 309, the signal line gaps (310, 311-1, 311-2), the output GND pin pads (312-1, 312-2, 312-3) and the high-frequency signal line output pin pads (313, 314) are all located in the same plane, and are all located on the upper surface of the substrate 316, and can all use the same film material, such as Ti/pt/Au, with a thickness of micrometer level, and the only difference is the pattern size.
  • the via 315 is filled with conductive material, and the filling material includes but is not limited to copper, silver, tungsten and other materials, which are used to connect the common GND (302-1, 302-2, 302-3) and the intermediate reference GND401, and penetrate the first layer of ceramic 316-1 of the substrate (as shown in Figure 4).
  • the gold-tin eutectic region 301 is pre-set on the upper surface of the first common grounding region 302-1 (common GND) by electroplating, evaporation or sputtering, and is a thin film material with a thickness of micrometer level, about 2 to 10um.
  • the first matching resistor 305 and the second matching resistor 306 can be thin film resistors made of the same material and the same process, and are predetermined on the upper surface of the substrate 316, wherein the first matching resistor 305 connects the high-frequency pin pad 307 and the first common grounding region 302-1 (common GND), and the second matching resistor 306 connects the high-frequency negative signal line 304 and the third common grounding region 302-3 (common GND).
  • the high-frequency positive signal line 303 and the high-frequency negative signal line 304 both adopt a straight line pattern.
  • the high-frequency positive signal line 303 includes a high-frequency pin pad 308, a straight waveguide and a high-frequency signal line output pin pad 313, wherein the high-frequency pin pad 308 is close to the gold-tin eutectic region 301 and is located on the left side;
  • the high-frequency negative signal line 304 includes a straight waveguide and a high-frequency signal line output pin pad 314, and a second matching resistor 306 is set on the left side of the high-frequency negative signal line 304.
  • the second common grounding area 302-2 and the third common grounding area 302-3 are the second signal line gap 311-1, the third signal line gap 311-2, the high-frequency negative signal line 304 and the second matching resistor 306, wherein the second signal line gap 311-1 and the third signal line gap 311-2 surround the high-frequency negative signal line 304 and the second matching resistor 306.
  • the output GND pin pads (312-1, 312-2, 312-3), the high-frequency signal line output pin pads (313, 314) and the laser pin pads 309 are all located on the right side of the substrate, serving as the electrical input and output interfaces of the COC component.
  • the width of the output GND pin pads (312-1, 312-2, 312-3) and the high-frequency signal line output pin pads (313, 314) is greater than 150um, which can meet the bonding requirements of 2 gold wires.
  • the width W1 of the second signal line gap 311-1 and the third signal line gap 311-2, the line width W2 of the high frequency negative signal line 304, the thickness T and dielectric constant of the substrate, the intermediate reference GND401 and the common GND (302-1, 302-2, 302-3) together form a single-ended coplanar waveguide structure, forming the required characteristic impedance, usually 50 ohms.
  • the characteristic impedance of the driving chip of the EML laser chip is 100 ohms.
  • the first matching resistor 305 and the second matching resistor 306 respectively use a single-ended impedance of 50 ohms and form a differential impedance of 100 ohms.
  • the output GND pin plates (312-1, 312-2, 312-3) and the high-frequency signal line output pin plates (313, 314) also meet the requirements of characteristic impedance. Since the output GND pin plates (312-1, 312-2, 312-3) and the high-frequency signal line output pin plates (313, 314) need to be made wider due to gold wire bonding, the gaps of the second and third signal line gaps (311-1, 311-2) are adjusted accordingly. In order to reduce reflection, a trapezoidal structure with a gradually changing width is provided between the straight waveguide area of the high-frequency positive signal line 303 and the high-frequency negative signal line 304 and the high-frequency signal line output pin plates (313, 314) for transition.
  • the lengths of the high-frequency positive signal line 303 and the high-frequency negative signal line 304 are substantially equal.
  • the size of the high-frequency pin pad 308 is increased to form an equivalent capacitor, and the equivalent inductance and equivalent resistance of the gold wire of the EML chip are added to form an RLC circuit to reduce the loss of high-frequency signals.
  • the laser pin pad 309 is located at the lower right corner of the substrate (as shown in FIG3 ), and is disconnected from the common GND ( 302 - 1 , 302 - 2 , 302 - 3 ) by a gap.
  • a narrow blank area is reserved around the outer edge of the upper surface of the substrate 316 .
  • the material of the substrate 316 includes, but is not limited to, AlN ceramics and high-resistance silicon.
  • the substrate 316 adopts a double-layer or multi-layer structure. This embodiment is described by taking a double-layer ceramic structure as an example. As shown in FIG4 , it includes a first layer of ceramic 316-1, a second layer of ceramic 316-2, an intermediate reference GND 401, a bottom reference GND 402, and a via 315.
  • the vias 315 are distributed in the area of the common GND (302-1, 302-2, 302-3), and include multiple independent individuals.
  • the via diameter is not limited, preferably 0.1 mm in diameter, and the number of vias is not limited.
  • the number of vias is 18, and all 18 vias penetrate the first layer of ceramic 316-1 and conduct and connect the common GND (302-1, 302-2, 302-3) and the intermediate reference GND 401.
  • the upper surface common GND 302 - 1 , 302 - 2 , 302 - 3
  • the first layer of ceramic 316 - 1 the middle reference GND 401
  • the second layer of ceramic 316 - 2 the second layer of ceramic 316 - 2
  • the bottom layer reference GND 402 the second ceramic layer 316 - 2 may also be provided with vias to conduct the middle reference GND 401 and the bottom reference GND 402 .
  • the COC component is electrically interconnected with the electrical interface pins in the PCBA or BOX shell of the optical module, as shown in Figure 5.
  • An external electrical interface pin plate (501-506) is set on the right side of the EML COC component, and the input and output pins 309, 312, 313 and 314 of the COC are electrically interconnected with the electrical interface pin plate (501-506) through gold wires (507-512), one-to-one correspondence, and the corresponding relationship is: the output GND pin plate 312-1, the gold wire 507 and the electrical interface GND pin plate 501 are a group; the high-frequency signal line output pin plate 314, the gold wire 507 and the electrical interface GND pin plate 501 are a group; 8 and the electrical interface differential negative pin plate 502 are a group; the output GND pin plate 312-2, the gold wire 509 and the electrical interface GND pin plate 503 are a group; the high-frequency signal line output pin plate 313, the gold wire 510 and the electrical interface differential positive pin plate 504 are a
  • the COC component itself also has gold wire interconnection.
  • the high-frequency pin plate 201 of the EML chip 101 is interconnected with the high-frequency pin pad 308 through the gold wire 513
  • the high-frequency pin plate 201 is interconnected with the high-frequency pin pad 307 through the gold wire 514
  • the laser pad 202 is interconnected with the filter capacitor 103 through the gold wire 515
  • the filter capacitor 103 is interconnected with the laser pin pad 309 through the gold wire 516.
  • the gold wires 513-516 are all single wires, and the gold wire 513 can be doubled if necessary.
  • the EML chip 101 is equivalent to an EAM 601 and a DFB 602, the EAM 601 and the DFB 602 are connected to GND, the EAM 601 is connected in parallel with the first matching resistor 305, the high-frequency positive signal line 304 and the common GND 302-3 are connected in series with the second matching resistor 306, and the DFB 602 is connected in parallel with the filter capacitor 103.
  • the size of the high-frequency pin pad 307 is enlarged, for example, the length is more than 0.45 mm, and the first matching resistor 305 is moved to the right, and a DC-block capacitor 701 is surface mounted on the high-frequency pin pad 307. As shown in Figures 7 and 8, the DC-block capacitor 701 is connected in series with the first matching resistor 305. The DC-block capacitor 701 and the first matching resistor 305 form an RC circuit to match the high-frequency impedance.
  • the bandwidth simulation curve of the GSGSG COC component and the external electrical interface shows that the 3dB bandwidth is 49GHz, which is about 49GHz when matched with the EML chip of a certain manufacturer in the industry, and is fully sufficient for the application of 100G PMA4.
  • Embodiment 2 GSSG type COC assembly:
  • the output ground pin pad includes a fourth output GND pin pad 1002-1 and a fifth output GND pin pad 1002-2; wherein,
  • the fourth output GND pin pad 1002-1, the fifth output GND pin pad 1002-2, the high-frequency signal line output pin pad and the laser pin pad are all located on the other side of the substrate opposite to the EML chip, serving as electrical input and output interfaces of the double-ended EML COC component.
  • the electrical interface pins of the COC adopt the GSSG structure in order to maintain synchronization.
  • the GSSG type COC component is similar to the GSGSG type component, the difference is that the middle GND pin plate 312-2 is reduced in the input and output pin plate of the COC component, but the common GND (the second common ground area 302-2) is still retained inside the COC component body. Due to the reduction of the GND pin plate 312-2, the signal line gaps (310, 311-1, 311-2) and the high-frequency signal line output pin plates (313, 314) are adjusted accordingly to meet the requirements of characteristic impedance.
  • FIG10 it includes an EML chip 101, a ceramic substrate 901 and a filter capacitor 103.
  • the parts of the same structure of the two COC components are coded with the same number.
  • a gold-tin eutectic region 301 and a common GND 1001-1 are set on the upper surface of the ceramic substrate 901.
  • the EML chip 101 is set directly above the gold-tin eutectic region 301 and fixed by gold-tin eutectic welding, and the front light-emitting surface 203 of the EML chip 101 faces the left side of the ceramic substrate 102.
  • the filter capacitor 103 is set on the upper surface of the common GND 1001-1 and the area directly below as shown in FIG10 , and there is a certain interval with the gold-tin eutectic region 301.
  • the filter capacitor 103 is fixed by gold-tin eutectic welding or conductive adhesive bonding.
  • an MPD backlight chip (not shown) is arranged on the right side of the rear light emitting surface 204 of the EML chip 101 and on the upper surface of the common GND 1001 - 1 and fixed by gold-tin eutectic soldering or conductive adhesive bonding.
  • the ceramic substrate 901 includes a gold-tin eutectic region 301, a common GND (1001-1, 1001-2, 1001-3), a high-frequency positive signal line 303, a high-frequency negative signal line 304, a first matching resistor 305, a second matching resistor 306, high-frequency pin pads 307, 308, a laser pin pad 309, signal line gaps 310, 311-1, 311-2, output GND pin pads (1002-1, 1002-2), high-frequency signal line output pin pads 1003, 1004, a via 315, and a substrate 316.
  • the common GND 1001-1, the common GND 1001-2, and the common GND 1001-3 are interconnected areas.
  • the X direction in FIG. 11 is the first direction
  • the Y direction is the second direction.
  • the common GND 1001-3, the second signal line gap 311-1, the high-frequency negative signal line 304 and the second matching resistor 306 the third signal line gap 311-2, the common GND 1001-2, the first signal line gap 310, the high-frequency positive signal line 303, the common GND 1001-1, the laser pin pad 309 and the first matching resistor 305, and the high-frequency pin pad 307 are arranged in sequence.
  • the common GND 1001 is located in the outer edge area, and surrounds the signal line gap 311-1, the high-frequency negative signal line 304, the second matching resistor 306, the signal line gap 311-2, the signal line gap 310, and the high-frequency positive signal line 303 in a semi-enclosed manner.
  • the gold-tin eutectic region 301 is disposed on the upper surface of the common GND 1001-1 and is higher than the common GND 1001-1.
  • the common GND (1001-1, 1001-2, 1001-3), the high-frequency positive signal line 303, the high-frequency negative signal line 304, the first matching resistor 305, the second matching resistor 306, the high-frequency pin pads (307, 308), the laser pin pad 309, the signal line gaps (310, 311-1, 311-2), the output GND pin pads (1002-1, 1002-2) and the high-frequency signal line output pin pads (1003, 1004) are all located in the same plane, and are all located on the upper surface of the substrate 316, and are all made of the same film material, such as Ti/pt/Au, with a thickness of micrometers, and the only difference is the pattern size.
  • the via 315 is filled with conductive material, including but not limited to copper, silver, tungsten and other materials, which are used to connect the common GND 1001 and the intermediate reference GND 401, and penetrate the first layer of ceramic 316-1 of the substrate (as shown in Figure 4).
  • conductive material including but not limited to copper, silver, tungsten and other materials, which are used to connect the common GND 1001 and the intermediate reference GND 401, and penetrate the first layer of ceramic 316-1 of the substrate (as shown in Figure 4).
  • both the high-frequency positive signal line 303 and the high-frequency negative signal line 304 adopt a straight line pattern.
  • the high-frequency positive signal line 303 includes a high-frequency pin pad 308, a straight waveguide and a high-frequency signal line output pin pad 1004, wherein the high-frequency pin pad 308 is close to the gold-tin eutectic region 301 and is located on the left side;
  • the high-frequency negative signal line 304 includes a straight waveguide and a high-frequency signal line output pin pad 1003, and a second matching resistor 306 is set on the left side of the high-frequency negative signal line 304.
  • the signal line gap 310 and the high-frequency positive signal line 303 Between the common GND 1001-1 and the common GND 1001-2 are the signal line gap 310 and the high-frequency positive signal line 303.
  • the output GND pin pads (1002-1, 1002-2), the high-frequency signal line output pin pads (1003, 1004) and the laser pin pads 309 are all located on the right side of the substrate, serving as the electrical input and output interfaces of the COC assembly.
  • the width of the output GND pin pads (1002-1, 1002-2) and the high-frequency signal line output pin pads (1003, 1004) is greater than 150um, which can meet the bonding requirements of 2 gold wires.
  • the width W1 of the signal line slots 311-1 and 311-2, the line width W2 of the high-frequency negative signal line 304, the thickness T and dielectric constant of the substrate, the intermediate reference GND and the common GND together constitute a single-ended coplanar waveguide structure to form the required characteristic impedance, which is usually 50 ohms.
  • the width W3 of the signal line slot 310, the line width W2 of the high-frequency positive signal line 303, the thickness T and dielectric constant of the substrate, the intermediate reference GND and the common GND together constitute a single-ended coplanar waveguide structure to form the required characteristic impedance, which is usually 50 ohms.
  • the characteristic impedance of the driver chip of the EML laser chip is 100 ohms, and to match it, the first matching resistor 305 and the second matching resistor 306 respectively use a single-ended impedance of 50 ohms, and form a differential of 100 ohms.
  • the output GND pin plate 1002 and the high-frequency signal line output pin plate (1003, 1004) also meet the characteristic impedance requirements. Since the output GND pin plate 1002 and the high-frequency signal line output pin plate (1003, 1004) need to be made wider due to gold wire bonding, the gap of the signal line gap 311 is adjusted accordingly.
  • a trapezoidal structure with a gradually changing width is provided between the straight waveguide area of the high-frequency positive signal line 303 and the high-frequency negative signal line 304 and the high-frequency signal line output pin pad (1003, 1004) for transition.
  • the output GND pin pad 1002, the high-frequency signal line output pin pad (1003, 1004) and the signal line gap 311 together constitute a differential coplanar waveguide structure.
  • the lengths of the high-frequency positive signal line 303 and the high-frequency negative signal line 304 are substantially equal.
  • the size of the high-frequency pin pad 308 is increased to form an equivalent capacitor, and the equivalent inductance and equivalent resistance of the gold wire of the EML chip are added to form an RLC circuit to reduce the loss of high-frequency signals.
  • the COC component is electrically interconnected with the electrical interface pins in the PCBA or BOX shell of the optical module, as shown in FIG. 12 .
  • an external electrical interface pin disk 1101-1105 is set, and the input and output pins 309, 1002-1, 1002-2, 1003 and 1004 of the COC are electrically interconnected with the electrical interface pin disks 1101-1105 through gold wires 1106-1110, and the corresponding relationship is as follows: the output GND pin disk 1002-1, the gold wire 1106 and the electrical interface GND pin disk 1101 are a group; the high-frequency signal line output pin disk 1003, the gold wire 1107 and the electrical interface differential negative pin disk 1102 are a group; the high-frequency signal line output pin disk 1004, the gold wire 1108 and the electrical interface differential positive pin disk 1103 are a group; the output GND pin disk 1002-2, the gold wire 1109 and the electrical interface GND pin disk 1104 are The laser pin pad 309, the gold wire 1110 and the electrical interface
  • COC component itself has gold wire interconnections, which is the same as the above-mentioned GSGSG type (Example 1) and will not be repeated here.
  • FIG13 The equivalent circuit of FIG12 is shown in FIG13.
  • the EML chip 101 is equivalent to an EAM 601 and a DFB 602
  • the EAM 601 and the DFB 602 are connected to GND
  • the EAM 601 is connected in parallel with the first matching resistor 305
  • the high-frequency positive signal line 304 is connected in series with the common GND1001-3
  • the DFB 602 is connected in parallel with the filter capacitor 103.
  • the size of the high-frequency pin pad 307 is enlarged, for example, the length is more than 0.45 mm, and the first matching resistor 305 is moved to the right, and a DC-block capacitor is surface mounted on the high-frequency pin pad 307.
  • This structure is the same as FIG. 7 in the first embodiment, and will not be repeated here.
  • the technical solution of the present invention in essence, or the part that contributes to the prior art, can be embodied in the form of a software product.
  • the computer software product is stored in a storage medium (such as a read-only memory (ROM)/RAM, a magnetic disk, or an optical disk), and includes a number of instructions for a terminal device (which can be a mobile phone, a computer, a server, or a network device, etc.) to execute the methods described in the various embodiments of the present invention.
  • a storage medium such as a read-only memory (ROM)/RAM, a magnetic disk, or an optical disk
  • a terminal device which can be a mobile phone, a computer, a server, or a network device, etc.

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Abstract

一种双端型EML COC组件，包括陶瓷基板（102），设有金锡共晶区域（301）、第一至第三公共接地区域（302-1，302-2，302-3）、高频正极信号线（303）、高频负极信号线（304）、第一和第二匹配电阻（305，306）、高频引脚焊盘（307，308）、激光器引脚焊盘（309）、第一至第三信号线缝隙（310，311-1，311-2）、输出接地引脚盘（312-1，312-2，312-3）、高频信号线输出引脚盘（313，314）、过孔（305）及基板（316）；其中，第一至第三公共接地区域（302-1，302-2，302-3）为相互连通的区域；EML芯片（101），位于金锡共晶区域（301）的正上方；滤波电容（103），位于第一公共接地区域（302-1），且滤波电容（103）与金锡共晶区域（302-1）之间存在间隔。在EML芯片引脚旁并列设计高频正极信号线（303）、和高频负极信号线（304），每一信号线均包含一个高频信号线输出引脚盘（313，314），形成双端差分型COC组件，从而提高EML组件高频信号完整性，以提高EML组件的带宽。

Description

双端型EML COC组件 技术领域
本发明涉及光模块技术领域，尤其涉及一种双端型EML COC组件。
背景技术
光通信用的发射器件是光模块的核心元件之一，而COC(Chip On Carrier)组件是发射器件的核心组件之一。COC组件的结构、性能对光器件以及光模块的高频性能、热性能起到非常关键的作用。特别是对于高速率光模块以及长传输距离的光模块，例如400G、800G等高速光模块。400G、800G等高速光模块采用以EML(Electro-absorption Modulated Laser)激光器为核心的COC组件。EML激光器芯片因光谱特性、啁啾特性良好而得到广泛应用。对于EML激光器的COC组件，由于EML激光器芯片只有一个高频引脚盘作为输出端口，该高频引脚盘通过金丝等良导体与光器件中的高频元件(例如陶瓷基板、TO底座、BOX陶瓷件)进行电互连，形成了GSG(Ground、Signal、Ground)型的高频传输的信号传输结构，如专利CN113552674A、CN217718170U、CN202310590348.X、US16555363等，这种结构适用于大多数高频信号的传输。
然而，COC组件(包含EML激光器芯片)是与光模块组件中PCBA上的高频驱动芯片(Driver芯片、DSP芯片)匹配使用的，如CN112505855A，当COC组件与高频驱动芯片的匹配性不佳时，这种单端型COC组件的高频性能不能满足光模块的使用。
双端型EML COC组件可以提供更优良的高频传输性能，与高频驱动芯片具有更良好的性能匹配。现阶段市场上双端型方案很少，比如CN217693343U，该专利是一种双端型，但是该结构中另一端(5015端口)过于简单，没有考虑差分信号线传输距离等长的因素，信号的匹配不佳。
发明内容
本发明的主要目的在于提供一种双端型EML COC组件，旨在解决现有COC组件存在与高频驱动芯片的匹配性不佳、信号匹配不佳等技术问题。
为实现上述目的，本发明提供了一种双端型EML COC组件，包括：
陶瓷基板，所述陶瓷基板上设有金锡共晶区域、第一公共接地区域、第二公共接地区域、第三公共接地区域、第一信号线、第二信号线、第一匹配电阻、第二匹配电阻、高频引脚焊盘、激光器引脚焊盘、第一信号线缝隙、第二信号线缝隙、第三信号线缝隙、输出接地引脚盘、高频信号线输出引脚盘、过孔以及基板；其中，所述第一公共接地区域、第二公共接地区域和第三公共接地区域为相互连通的区域；所述第一信号线和第二信号线并列设计，每一信号线均包含一个所述高频信号线输出引脚盘；
EML芯片，位于所述金锡共晶区域的正上方；
滤波电容，位于所述第一公共接地区域，且所述滤波电容与所述金锡共晶区域之间存在间隔。
在一些实施例中，所述第一信号线和所述第二信号线均采用直线型图案，所述第一信号线和所述第二信号线的信号路径沿第一方向延伸；
沿垂直于所述第一方向的第二方向，依次排布有所述第三公共接地区域、第二信号线缝隙、第二信号线、第二匹配电阻、第三信号线缝隙、第二公共接地区域、第一信号线缝隙、第一信号线、第一公共接地区域、激光器引脚焊盘、第一匹配电阻以及高频引脚焊盘。
在一些实施例中，所述EML芯片，包括高频引脚盘、激光器焊盘、第一出光面以及第二出光面；所述EML芯片设有相邻的EAM区域以及DFB区域；其中，
所述EAM区域和所述DFB区域沿所述第一方向依次排布；
所述高频引脚盘和所述第一出光面位于所述EAM区域，所述激光器焊盘和所述第二出光面位于所述DFB区域。
在一些实施例中，所述输出接地引脚盘，包括第一输出GND引脚盘、第二输出GND引脚盘以及第三输出GND引脚盘；其中，
所述第一输出GND引脚盘、第二输出GND引脚盘、第三输出GND引脚盘、所述高频信号线输出引脚盘以及所述激光器引脚焊盘均位于所述基板的与所述EML芯片相对的另一侧，作为所述双端型EML COC组件的电输入输出接口。
在一些实施例中，所述第一公共接地区域、第二公共接地区域以及第三 公共接地区域位于外沿区域，呈半包围的方式包围所述第二信号线缝隙、第二信号线、第二匹配电阻、第三信号线缝隙、第一信号线缝隙以及第一信号线；
所述金锡共晶区域设置在所述第一公共接地区域的上表面，且高于所述第一公共接地区域；
所述第一公共接地区域、第二公共接地区域、第三公共接地区域、第一信号线、第二信号线、第一匹配电阻、第二匹配电阻、高频引脚焊盘、激光器引脚焊盘、第一信号线缝隙、第二信号线缝隙、第三信号线缝隙、第一输出GND引脚盘、第二输出GND引脚盘、第三输出GND引脚盘以及高频信号线输出引脚盘均位于同一平面内，且均位于所述基板的上表面。
在一些实施例中，所述第二信号线缝隙的缝宽、第三信号线缝隙的缝宽、所述第二信号线的线宽、基材的厚度和介电常数、中间参考接地以及公共接地组成第一单端共面波导结构，形成第一特征阻抗，所述第一特征阻抗为50欧姆；
所述第一信号线缝隙的缝宽、所述第一信号线的线宽、基材的厚度和介电常数、中间参考接地以及公共接地组成第二单端共面波导结构，形成第二特征阻抗，所述第二特征阻抗为50欧姆。
在一些实施例中，所述EML芯片的驱动芯片的特征阻抗为100欧姆，所述第一匹配电阻和所述第二匹配电阻分别采用50欧姆的单端阻抗，并形成差分100欧姆。
在一些实施例中，所述输出接地引脚盘，包括第四输出GND引脚盘和第五输出GND引脚盘；其中，
所述第四输出GND引脚盘、第五输出GND引脚盘、所述高频信号线输出引脚盘以及所述激光器引脚焊盘均位于所述基板的与所述EML芯片相对的另一侧，作为所述双端型EML COC组件的电输入输出接口。
在一些实施例中，所述第一公共接地区域、第二公共接地区域以及第三公共接地区域位于外沿区域，呈半包围的方式包围所述第二信号线缝隙、第二信号线、第二匹配电阻、第三信号线缝隙、第一信号线缝隙以及第一信号线；
所述金锡共晶区域设置在所述第一公共接地区域的上表面，且高于所述 第一公共接地区域；
所述第一公共接地区域、第二公共接地区域、第三公共接地区域、第一信号线、第二信号线、第一匹配电阻、第二匹配电阻、高频引脚焊盘、激光器引脚焊盘、第一信号线缝隙、第二信号线缝隙、第三信号线缝隙、第四输出GND引脚盘、第五输出GND引脚盘以及高频信号线输出引脚盘均位于同一平面内，且均位于所述基板的上表面。
在一些实施例中，所述第四输出GND引脚盘和第五输出GND引脚盘、所述高频信号线输出引脚盘以及所述第二信号线缝隙和第三信号线缝隙共同组成差分共面波导结构。
本发明提出一种双端型EML COC组件，包括：陶瓷基板，所述陶瓷基板上设有金锡共晶区域、第一公共接地区域、第二公共接地区域、第三公共接地区域、第一信号线、第二信号线、第一匹配电阻、第二匹配电阻、高频引脚焊盘、激光器引脚焊盘、第一信号线缝隙、第二信号线缝隙、第三信号线缝隙、输出接地引脚盘、高频信号线输出引脚盘、过孔以及基板；其中，所述第一公共接地区域、第二公共接地区域和第三公共接地区域为相互连通的区域；所述第一信号线和第二信号线并列设计，每一信号线均包含一个所述高频信号线输出引脚盘；EML芯片，位于所述金锡共晶区域的正上方；滤波电容，位于所述第一公共接地区域，且所述滤波电容与所述金锡共晶区域之间存在间隔。本发明，在EML芯片引脚的旁边，并列设计第一信号线、第二信号线，每一信号线均包含一个高频信号线输出引脚盘，以形成双端差分型COC组件，从而可以提高EML组件的高频信号完整性，进一步提高EML组件的带宽，解决了现有COC组件存在与高频驱动芯片的匹配性不佳、信号匹配不佳等技术问题。
附图说明
图1为本发明实施例涉及GSGSG双端型EML COC组件的结构示意图；
图2为本发明实施例涉及双端型EML COC组件的EML芯片示意图；
图3为本发明实施例涉及GSGSG双端型基板示意图；
图4为本发明实施例涉及双端型EML COC组件的基板的剖面结构示意图；
图5为本发明实施例涉及GSGSG COC组件与外接电接口互连示意图；
图6为本发明实施例涉及GSGSG COC组件与外接电接口互连简化电路图；
图7为本发明实施例涉及带DC-blcok电容的COC组件与外接电接口互连示意图；
图8为本发明实施例涉及带DC-blcok电容的COC组件与外接电接口互连简化电路图；
图9为本发明实施例涉及带GSGSG COC组件与外接电接口带宽仿真曲线示意图；
图10为本发明实施例涉及GSSG双端型EML COC组件示意图；
图11为本发明实施例涉及GSSG双端型EML COC组件的基板示意图；
图12为本发明实施例涉及GSSG COC组件与外接电接口互连示意图；
图13为本发明实施例涉及GSSG COC组件与外接电接口互连简化电路图。
本发明目的的实现、功能特点及优点将结合实施例，参照附图做进一步说明。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
需要说明，本发明实施例中所有方向性指示(诸如上、下、左、右、前、后……)仅用于解释在某一特定姿态(如附图所示)下各部件之间的相对位置关系、运动情况等，如果该特定姿态发生改变时，则该方向性指示也相应地随之改变。
另外，在本发明中涉及“第一”、“第二”等的描述仅用于描述目的，而不能理解为指示或暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。另外，各个实施例之间的技术方案可以相互结合，但是必须是以本领域普通技术人员能够实现为基础，当技术方案的结合出现相互矛盾或无法实现时应当认为这种技术方案的结合不存在，也不在本发明要求的保护 范围之内。应当理解，此处所描述的具体实施例仅用以解释本发明，并不用于限定本发明。
本发明提出一种双端型EML COC组件。
参照图1，图1为本发明实施例方案涉及双端型EML COC组件的结构示意图。
如图1所示，所述双端型EML COC组件，包括：
陶瓷基板102，所述陶瓷基板102上设有金锡共晶区域301、第一公共接地区域302-1、第二公共接地区域302-2、第三公共接地区域302-3、第一信号线、第二信号线、第一匹配电阻、第二匹配电阻、高频引脚焊盘、激光器引脚焊盘、第一信号线缝隙、第二信号线缝隙、第三信号线缝隙、输出接地引脚盘、高频信号线输出引脚盘、过孔以及基板；其中，所述第一公共接地区域、第二公共接地区域和第三公共接地区域为相互连通的区域；所述第一信号线和第二信号线并列设计，每一信号线均包含一个所述高频信号线输出引脚盘；
EML芯片101，位于所述金锡共晶区域301的正上方；
滤波电容103，位于所述第一公共接地区域，且所述滤波电容与所述金锡共晶区域之间存在间隔。
需要说明的是，本实施例提供了一种双端型EML(Electro-absorption Modulated Laser)COC(Chip On Carrier)组件，又称为差分EML COC组件。EML设置在一块陶瓷载体上，陶瓷载体上表面设置有高频走线，高频走线采用GSGSG(Ground、Signal、Ground、Signal、Ground)、GSSG(Ground、Signal、Signal、Ground)等引脚分布的方式，并且在陶瓷载体的端部设置引脚焊盘，以形成双端型分布的高频信号线结构，具有高带宽、高频信号完整性优良、较低成本、结构简单、可靠性高等优点，可以应用于光通信领域的光器件及模块，广泛应用于众多EML激光器场景，如CWDM、LWDM波长，可封装于QSFP DD、QSFP56、QSFP112、OSFP等模块中。
本实施例以第一信号线303为高频正极信号线，第二信号线为高频负极信号线为例进行说明。本实施例中，高频走线采用GSGSG、GSSG等引脚分布的方式，以下分别对GSGSG型COC组件和GSSG型COC组件进行具体说明。
实施例一、GSGSG型COC组件：
具体地，双端型EML COC组件如图1所示，包括EML芯片101、陶瓷基板102以及滤波电容103。结合图1和图2，在陶瓷基板102的上表面设置金锡共晶区域301、第一公共接地区域302-1(公共GND)，EML芯片101设置在金锡共晶区域301的正上方，可以通过金锡共晶焊的方式固定，并且EML芯片101的前出光面203朝向陶瓷基板102的左侧方向。滤波电容103设置在第一公共接地区域302-1(公共GND)的上表面、图1所示的正下方区域，并且与金锡共晶区域301存在一定的间隔，滤波电容103通过金锡共晶焊的方式或者导电胶粘接的方式固定。
可以理解的是，在实际应用中必要时，双端型EML COC组件，在EML芯片101的后出光面204的右侧、第一公共接地区域302-1(公共GND)的上表面设置MPD背光芯片(图中未示出)，MPD背光芯片通过金锡共晶焊的方式或者导电胶粘接的方式固定。
参考图2，在一些实施例中，所述EML芯片101，包括高频引脚盘、激光器焊盘、第一出光面以及第二出光面；所述EML芯片设有相邻的EAM区域以及DFB区域；其中，
所述EAM区域和所述DFB区域沿所述第一方向依次排布；
所述高频引脚盘和所述第一出光面位于所述EAM区域，所述激光器焊盘和所述第二出光面位于所述DFB区域。
具体地，如图2所示，EML芯片101为长方体，包含高频引脚盘201、激光器焊盘202、第一出光面即前出光面203、第二出光面即后出光面204。从功能上划分，EML芯片包含电吸收调制器(ElectroAbsorption Modulator，EAM)区域以及分布式反馈激光器(Distributed FeedBack Laser，DFB)区域，图2中以虚线205为分界线，左侧为EAM区域，右侧为DFB区域，其中，高频引脚盘201和第一出光面即前出光面203位于EAM区域，激光器焊盘202和第二出光面即后出光面204位于DFB区域。
具体地，如图3所示，陶瓷基板102包括金锡共晶区域301、公共GND即第一公共接地区域302-1、第二公共接地区域302-2、第三公共接地区域302-3、高频正极信号线303、高频负极信号线304、第一匹配电阻305、第二匹配电阻306、高频引脚焊盘(307、308)、激光器引脚焊盘309、信号线缝 隙即第一信号线缝隙310、第二信号线缝隙311-1以及第三信号线缝隙311-2、输出接地引脚盘即输出GND引脚盘(312-1、312-2、312-3)、高频信号线输出引脚盘(313、314)、过孔315以及基板316。其中，公共GND即第一公共接地区域302-1、第二公共接地区域302-2、第三公共接地区域302-3是相互连通的区域。
在一些实施例中，对于GSGSG型COC组件：所述输出接地引脚盘，包括第一输出GND引脚盘、第二输出GND引脚盘以及第三输出GND引脚盘；其中，
所述第一输出GND引脚盘、第二输出GND引脚盘、第三输出GND引脚盘、所述高频信号线输出引脚盘以及所述激光器引脚焊盘均位于所述基板的与所述EML芯片相对的另一侧，作为所述双端型EML COC组件的电输入输出接口。
在一些实施例中，参考图3，所述第一信号线和所述第二信号线均采用直线型图案，所述第一信号线和所述第二信号线的信号路径沿第一方向延伸；
沿垂直于所述第一方向的第二方向，依次排布有所述第三公共接地区域、第二信号线缝隙、第二信号线、第二匹配电阻、第三信号线缝隙、第二公共接地区域、第一信号线缝隙、第一信号线、第一公共接地区域、激光器引脚焊盘、第一匹配电阻以及高频引脚焊盘。
具体地，如图3所示，图3中X方向为第一方向、Y方向为第二方向，沿第二方向从上向下观察，依次是第三公共接地区域302-3(公共GND)、第二信号线缝隙311-1、第二信号线即高频负极信号线304和第二匹配电阻306、第三信号线缝隙311-2、第二公共接地区域302-2(公共GND)、第一信号线缝隙310、第一信号线即高频正极信号线303、第一公共接地区域302-1(公共GND)、激光器引脚焊盘309、第一匹配电阻305以及高频引脚焊盘307。
公共GND(302-1、302-2、302-3)位于外沿区域，呈半包围的方式，将第二信号线缝隙311-1、高频负极信号线304和第二匹配电阻306、第三信号线缝隙311-2、第一信号线缝隙310和高频正极信号线303包围起来。金锡共晶区域301设置在第一公共接地区域302-1(公共GND)的上表面，并高于第一公共接地区域302-1(公共GND)。公共GND(302-1、302-2、302-3)、 高频正极信号线303、高频负极信号线304、第一匹配电阻305、第二匹配电阻306、高频引脚焊盘307、308、激光器引脚焊盘309、信号线缝隙(310、311-1、311-2)、输出GND引脚盘(312-1、312-2、312-3)以及高频信号线输出引脚盘(313、314)均位于同一平面内，并且均位于基板316的上表面，并且均可以采用相同的膜系材料，比如Ti/pt/Au，厚度为微米级，区别仅在于图案尺寸不同。过孔315内填充导电材料，填充材料包括但不限于铜、银、钨等材料，用于连接公共GND(302-1、302-2、302-3)以及中间参考GND401，贯穿基板的第一层陶瓷316-1(如图4所示)。
具体地，金锡共晶区域301通过电镀、蒸镀或溅射等工艺预置在第一公共接地区域302-1(公共GND)的上表面，是一层微米级厚度的薄膜材料，厚度约为2至10um。第一匹配电阻305和第二匹配电阻306可以为相同材料、相同工艺制备的薄膜电阻，预定在基板316的上表面，其中第一匹配电阻305连通高频引脚焊盘307和第一公共接地区域302-1(公共GND)，第二匹配电阻306连通高频负极信号线304和第三公共接地区域302-3(公共GND)。
具体地，高频正极信号线303和高频负极信号线304均采用直线型图案。其中，高频正极信号线303包含高频引脚焊盘308、一段直线型波导和高频信号线输出引脚盘313，其中高频引脚焊盘308靠近金锡共晶区域301区域，位于左侧；高频负极信号线304包含一段直线型波导和高频信号线输出引脚盘314，在高频负极信号线304的左侧设置第二匹配电阻306。在第二公共接地区域302-2、第三公共接地区域302-3之间为第二信号线缝隙311-1、第三信号线缝隙311-2、高频负极信号线304以及第二匹配电阻306，其中第二信号线缝隙311-1和第三信号线缝隙311-2又包围高频负极信号线304和第二匹配电阻306。在第一公共接地区域302-1、第二公共接地区域302-2之间为第一信号线缝隙310和高频正极信号线303。输出GND引脚盘(312-1、312-2、312-3)、高频信号线输出引脚盘(313、314)和激光器引脚焊盘309均位于基板的右侧，作为COC组件的电输入输出接口。输出GND引脚盘(312-1、312-2、312-3)和高频信号线输出引脚盘(313、314)的宽度大于150um，可满足2根金丝的键合要求。
针对高频特征阻抗，第二信号线缝隙311-1和第三信号线缝311-2的缝宽W1、高频负极信号线304的线宽W2、基材的厚度T和介电常数、中间参考 GND401以及公共GND(302-1、302-2、302-3)共同组成了单端共面波导结构，形成所需要的特征阻抗，通常是50欧姆。同样的，第一信号线缝隙310的缝宽W3、高频正极信号线303的线宽W2、基材的厚度T和介电常数、中间参考GND401以及公共GND(302-1、302-2、302-3)共同组成了单端共面波导结构，形成所需要的特征阻抗，通常是50欧姆。
通常，EML激光器芯片的驱动芯片的特征阻抗是100欧姆，与之匹配的，第一匹配电阻305和第二匹配电阻306分别采用50欧姆的单端阻抗，并形成差分100欧姆。
需要说明的是，输出GND引脚盘(312-1、312-2、312-3)和高频信号线输出引脚盘(313、314)同样满足特征阻抗的要求，由于输出GND引脚盘(312-1、312-2、312-3)和高频信号线输出引脚盘(313、314)因金丝键合的原因需要制作更宽的尺寸，相应的，第二和第三信号线缝隙(311-1、311-2)的缝隙做相应的调整。为了减少反射，高频正极信号线303、高频负极信号线304的直波导区域与高频信号线输出引脚盘(313、314)之间设置有宽度渐变的梯形结构进行过渡。另外，为了确保差分高频信号传输距离相近，高频正极信号线303和高频负极信号线304的长度基本相等。为了获得良好的高频特性，将高频引脚焊盘308的尺寸加大，形成等效电容，再加上EML芯片的金丝的等效电感和等效电阻，形成RLC电路，用于减少高频信号的损耗。
示例性地，激光器引脚焊盘309位于基板的右下角(如图3所示)，通过一个间隙与公共GND(302-1、302-2、302-3)断开。另外，出于工艺考虑，在基板316的上表面的四周外沿预留一圈窄的空白区域。
具体地，基板316的材质包括但不限于AlN陶瓷、高阻硅。基板316采用双层或者多层结构，本实施例以双层陶瓷结构为例进行说明，如图4所示，包含第一层陶瓷316-1、第二层陶瓷316-2、中间参考GND401、底层参考GND402以及过孔315。过孔315分布在公共GND(302-1、302-2、302-3)的区域，包含多个独立的个体，过孔直径不限制，优选0.1mm直径，过孔数量不限制，如图3所示的过孔数量为18个，18个过孔全部贯穿第一层陶瓷316-1并导通连接公共GND(302-1、302-2、302-3)和中间参考GND401。如图4所示，从上至下依次是上表面公共GND(302-1、302-2、302-3)、第一层陶瓷316-1、中间参考GND401、第二层陶瓷316-2、底层参考GND402。 必要时，第二层陶瓷316-2也可以设置过孔，以导通中间参考GND401和底层参考GND402。
相应的，COC组件与光模块的PCBA或者BOX管壳中电接口引脚进行电互连，如图5所示。在EML COC组件的右侧设置外接的电接口引脚盘(501-506)，COC的输入输出引脚309、312、313和314通过金丝(507-512)与电接口引脚盘(501-506)进行电互连，一一对应，其对应关系为：输出GND引脚盘312-1、金丝507和电接口GND引脚盘501为一组；高频信号线输出引脚盘314、金丝508和电接口差分负极引脚盘502为一组；输出GND引脚盘312-2、金丝509和电接口GND引脚盘503为一组；高频信号线输出引脚盘313、金丝510和电接口差分正极引脚盘504为一组；输出GND引脚盘312-3、金丝511和电接口GND引脚盘505为一组；激光器引脚焊盘309、金丝512和电接口激光器引脚盘506为一组。特别的，金丝(507-511)均为双线，金丝512为单线。
可以理解的是，COC组件本身也存在金丝互连。EML芯片101的高频引脚盘201通过金丝513与高频引脚焊盘308互连，高频引脚盘201通过金丝514与高频引脚焊盘307互连，激光器焊盘202通过金丝515与滤波电容103互连，滤波电容103通过金丝516与激光器引脚焊盘309互连。金丝513-516均为单线，必要时金丝513可以打双线。
需要说明的是，图5的等效电路如图6所示。EML芯片101等效为一个EAM 601和一个DFB 602，EAM 601和DFB 602共同连接GND，EAM 601并联第一匹配电阻305，高频正极信号线304与公共GND302-3之间串联第二匹配电阻306，DFB 602并联滤波电容103。
类似的，存在一个变形结构：将高频引脚焊盘307的尺寸扩大，比如长度达0.45mm以上，同时将第一匹配电阻305右移，在高频引脚焊盘307上表面贴装DC-block电容701。如图7和图8所示，DC-block电容701与第一匹配电阻305串联。DC-block电容701与第一匹配电阻305形成RC电路，以匹配高频阻抗。
如图9所示，带GSGSG COC组件与外接电接口(PCBA)的带宽仿真的曲线，3dB带宽49GHz，与业内某一厂商的EML芯片匹配使用的带宽约49GHz，完全足够100G PMA4的应用。
实施例二、GSSG型COC组件：
具体地，对于GSSG型COC组件，在一些实施例中，输出接地引脚盘，包括第四输出GND引脚盘1002-1和第五输出GND引脚盘1002-2；其中，
所述第四输出GND引脚盘1002-1、第五输出GND引脚盘1002-2、所述高频信号线输出引脚盘以及所述激光器引脚焊盘均位于所述基板的与所述EML芯片相对的另一侧，作为所述双端型EML COC组件的电输入输出接口。
需要说明的是，当外接的PCBA或BOX管壳的电接口采用GSSG结构时，COC的电接口引脚为了保持同步，采用GSSG结构。GSSG型COC组件与GSGSG型组件相似，区别在于COC组件的输入输出引脚盘中减少中间的一个GND引脚盘312-2，但是在COC组件主体内部仍保留公共GND(第二公共接地区域302-2)。由于GND引脚盘312-2的减少，相应的，信号线缝隙(310、311-1、311-2)、高频信号线输出引脚盘(313、314)做调整，以满足特征阻抗的要求。
如图10所示，包括EML芯片101、陶瓷基板901以及滤波电容103。为了方便与GSGSG型(实施例一)做对比，两款COC组件相同结构的部分采用相同的号码编码。在陶瓷基板901的上表面设置金锡共晶区域301、公共GND1001-1，EML芯片101设置在金锡共晶区域301的正上方，通过金锡共晶焊的方式固定，并且EML芯片101的前出光面203朝向陶瓷基板102的左侧方向。滤波电容103设置在公共GND1001-1的上表面、图10所示的正下方区域，并且与金锡共晶区域301存在一定的间隔，滤波电容103通过金锡共晶焊的方式或者导电胶粘接的方式固定。必要时，在EML芯片101的后出光面204的右侧、公共GND1001-1的上表面设置MPD背光芯片(图中未示出)，通过金锡共晶焊的方式或者导电胶粘接的方式固定。
如图11所示，陶瓷基板901包括金锡共晶区域301、公共GND(1001-1、1001-2、1001-3)、高频正极信号线303、高频负极信号线304、第一匹配电阻305、第二匹配电阻306、高频引脚焊盘307、308、激光器引脚焊盘309、信号线缝隙310、311-1、311-2、输出GND引脚盘(1002-1、1002-2)、高频信号线输出引脚盘1003、1004、过孔315以及基板316。其中公共GND 1001-1、公共GND 1001-2和公共GND 1001-3是相互连通的区域。
如图11所示，图11中X方向为第一方向、Y方向为第二方向，沿第二方向从上向下观察，依次是公共GND 1001-3、第二信号线缝隙311-1、高频负极信号线304和第二匹配电阻306、第三信号线缝隙311-2、公共GND1001-2、第一信号线缝隙310、高频正极信号线303、公共GND 1001-1、激光器引脚焊盘309和第一匹配电阻305以及高频引脚焊盘307。公共GND 1001位于外沿区域，呈半包围的方式，将信号线缝隙311-1、高频负极信号线304、第二匹配电阻306、信号线缝隙311-2、信号线缝隙310和高频正极信号线303包围起来。金锡共晶区域301设置在公共GND 1001-1的上表面，并高于公共GND 1001-1。
具体地，公共GND(1001-1、1001-2、1001-3)、高频正极信号线303、高频负极信号线304、第一匹配电阻305、第二匹配电阻306、高频引脚焊盘(307、308)、激光器引脚焊盘309、信号线缝隙(310、311-1、311-2)、输出GND引脚盘(1002-1、1002-2)以及高频信号线输出引脚盘(1003、1004)均位于同一平面内，并且均位于基板316的上表面，并且均采用相同的膜系材料，比如Ti/pt/Au，厚度是微米级，区别仅在于图案尺寸不同。过孔315内填充导电材料，填充材料包括但不限于铜、银、钨等材料，用于连接公共GND1001以及中间参考GND 401，贯穿基板的第一层陶瓷316-1(如图4所示)。
示例性地，高频正极信号线303和高频负极信号线304均采用直线型图案。其中，高频正极信号线303包含高频引脚焊盘308、一段直线型波导和高频信号线输出引脚盘1004，其中高频引脚焊盘308靠近金锡共晶区域301区域，位于左侧；高频负极信号线304包含一段直线型波导和高频信号线输出引脚盘1003，在高频负极信号线304的左侧设置第二匹配电阻306。在公共GND1001-2和公共GND1001-3之间是信号线缝隙(311-1、311-2)、高频负极信号线304和第二匹配电阻306，其中信号线缝隙(311-1、311-2)又包围高频负极信号线304和第二匹配电阻306。在公共GND1001-1和公共GND1001-2之间是信号线缝隙310和高频正极信号线303。输出GND引脚盘(1002-1、1002-2)、高频信号线输出引脚盘(1003、1004)和激光器引脚焊盘309均位于基板的右侧，作为COC组件的电输入输出接口。输出GND引脚盘(1002-1、1002-2)和高频信号线输出引脚盘(1003、1004)的宽度大于150um，可满足2根金丝的键合要求。
需要说明的是，针对高频特征阻抗，信号线缝隙311-1和信号线缝隙311-2的缝宽W1、高频负极信号线304的线宽W2、基材的厚度T和介电常数、中间参考GND以及公共GND共同组成了单端共面波导结构，形成所需要的特征阻抗，通常是50欧姆。同样的，信号线缝隙310的缝宽W3、高频正极信号线303的线宽W2、基材的厚度T和介电常数、中间参考GND以及公共GND共同组成了单端共面波导结构，形成所需要的特征阻抗，通常是50欧姆。
EML激光器芯片的驱动芯片的特征阻抗是100欧姆，与之匹配的，第一匹配电阻305和第二匹配电阻306分别采用50欧姆的单端阻抗，并形成差分100欧姆。特别的，输出GND引脚盘1002和高频信号线输出引脚盘(1003、1004)同样满足特征阻抗的要求，由于输出GND引脚盘1002和高频信号线输出引脚盘(1003、1004)因金丝键合的原因需要制作更宽的尺寸，相应的，信号线缝隙311的缝隙做相应的调整。
为了减少反射，高频正极信号线303、高频负极信号线304的直波导区域与高频信号线输出引脚盘(1003、1004)之间设置有宽度渐变的梯形结构进行过渡。输出GND引脚盘1002和高频信号线输出引脚盘(1003、1004)和信号线缝隙311共同组成了差分共面波导结构。另外，为了确保差分高频信号传输距离相近，高频正极信号线303和高频负极信号线304的长度基本相等。特殊的，为了获得良好的高频特性，将高频引脚焊盘308的尺寸加大，形成等效电容，再加上EML芯片的金丝的等效电感和等效电阻，形成RLC电路，用于减少高频信号的损耗。
相应的，COC组件与光模块的PCBA或者BOX管壳中电接口引脚进行电互连，如图12所示。在EML COC组件的右侧设置外接的电接口引脚盘1101-1105，COC的输入输出引脚309、1002-1、1002-2、1003和1004通过金丝1106-1110与电接口引脚盘1101-1105进行电互连，一一对应，其对应关系为：输出GND引脚盘1002-1、金丝1106和电接口GND引脚盘1101为一组；高频信号线输出引脚盘1003、金丝1107和电接口差分负极引脚盘1102为一组；高频信号线输出引脚盘1004、金丝1108和电接口差分正极引脚盘1103为一组；输出GND引脚盘1002-2、金丝1109和电接口GND引脚盘1104为 一组；激光器引脚焊盘309、金丝1110和电接口激光器引脚盘1105为一组。特别的，金丝1106-1109均为双线，金丝1110为单线。
需要说明的是，COC组件本身存在金丝互连，与上述GSGSG型(实施例一)相同，此处不再赘述。
图12的等效电路如图13所示。参考图13，EML芯片101等效为一个EAM 601和一个DFB 602，EAM 601和DFB 602共同连接GND，EAM 601并联第一匹配电阻305，高频正极信号线304与公共GND1001-3之间串联第二匹配电阻306，DFB 602并联滤波电容103。
类似的，存在一个变形结构：将高频引脚焊盘307的尺寸扩大，比如长度达0.45mm以上，同时将第一匹配电阻305右移，在高频引脚焊盘307上表面贴装DC-block电容。该结构与实施例一中图7相同，此处不再赘述。
可以理解的是，带GSSG COC组件与外接电接口(PCBA)的带宽仿真的曲线，与实施例一中图9相近，此处不再赘述。
另外，未在本GSSG型COC组件实施例中详尽描述的技术细节，可参见本发明实施例所提供的应用于如上文所述的GSGSG型COC组件，此处不再赘述。
应当理解的是，以上仅为举例说明，对本发明的技术方案并不构成任何限定，在具体应用中，本领域的技术人员可以根据需要进行设置，本发明对此不做限制。
需要说明的是，以上所描述的工作流程仅仅是示意性的，并不对本发明的保护范围构成限定，在实际应用中，本领域的技术人员可以根据实际的需要选择其中的部分或者全部来实现本实施例方案的目的，此处不做限制。
此外，需要说明的是，在本文中，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者系统不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者系统所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括该要素的过程、方法、物品或者系统中还存在另外的相同要素。
上述本发明实施例序号仅仅为了描述，不代表实施例的优劣。
通过以上的实施方式的描述，本领域的技术人员可以清楚地了解到上述实施例方法可借助软件加必需的通用硬件平台的方式来实现，当然也可以通过硬件，但很多情况下前者是更佳的实施方式。基于这样的理解，本发明的技术方案本质上或者说对现有技术做出贡献的部分可以以软件产品的形式体现出来，该计算机软件产品存储在一个存储介质(如只读存储器(Read Only Memory，ROM)/RAM、磁碟、光盘)中，包括若干指令用以使得一台终端设备(可以是手机，计算机，服务器，或者网络设备等)执行本发明各个实施例所述的方法。
以上仅为本发明的优选实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (10)

  1. 一种双端型EML COC组件，其特征在于，所述双端型EML COC组件，包括：
    陶瓷基板，所述陶瓷基板上设有金锡共晶区域、第一公共接地区域、第二公共接地区域、第三公共接地区域、第一信号线、第二信号线、第一匹配电阻、第二匹配电阻、高频引脚焊盘、激光器引脚焊盘、第一信号线缝隙、第二信号线缝隙、第三信号线缝隙、输出接地引脚盘、高频信号线输出引脚盘、过孔以及基板；其中，所述第一公共接地区域、第二公共接地区域和第三公共接地区域为相互连通的区域；所述第一信号线和第二信号线并列设计，每一信号线均包含一个所述高频信号线输出引脚盘；
    EML芯片，位于所述金锡共晶区域的正上方；
    滤波电容，位于所述第一公共接地区域，且所述滤波电容与所述金锡共晶区域之间存在间隔。
  2. 如权利要求1所述的双端型EML COC组件，其特征在于，所述第一信号线和所述第二信号线均采用直线型图案，所述第一信号线和所述第二信号线的信号路径沿第一方向延伸；
    沿垂直于所述第一方向的第二方向，依次排布有所述第三公共接地区域、第二信号线缝隙、第二信号线、第二匹配电阻、第三信号线缝隙、第二公共接地区域、第一信号线缝隙、第一信号线、第一公共接地区域、激光器引脚焊盘、第一匹配电阻以及高频引脚焊盘。
  3. 如权利要求2所述的双端型EML COC组件，其特征在于，所述EML芯片，包括高频引脚盘、激光器焊盘、第一出光面以及第二出光面；所述EML芯片设有相邻的EAM区域以及DFB区域；其中，
    所述EAM区域和所述DFB区域沿所述第一方向依次排布；
    所述高频引脚盘和所述第一出光面位于所述EAM区域，所述激光器焊盘和所述第二出光面位于所述DFB区域。
  4. 如权利要求1所述的双端型EML COC组件，其特征在于，所述输出接地引脚盘，包括第一输出GND引脚盘、第二输出GND引脚盘以及第三输出GND引脚盘；其中，
    所述第一输出GND引脚盘、第二输出GND引脚盘、第三输出GND引 脚盘、所述高频信号线输出引脚盘以及所述激光器引脚焊盘均位于所述基板的与所述EML芯片相对的另一侧，作为所述双端型EML COC组件的电输入输出接口。
  5. 如权利要求4所述的双端型EML COC组件，其特征在于，所述第一公共接地区域、第二公共接地区域以及第三公共接地区域位于外沿区域，呈半包围的方式包围所述第二信号线缝隙、第二信号线、第二匹配电阻、第三信号线缝隙、第一信号线缝隙以及第一信号线；
    所述金锡共晶区域设置在所述第一公共接地区域的上表面，且高于所述第一公共接地区域；
    所述第一公共接地区域、第二公共接地区域、第三公共接地区域、第一信号线、第二信号线、第一匹配电阻、第二匹配电阻、高频引脚焊盘、激光器引脚焊盘、第一信号线缝隙、第二信号线缝隙、第三信号线缝隙、第一输出GND引脚盘、第二输出GND引脚盘、第三输出GND引脚盘以及高频信号线输出引脚盘均位于同一平面内，且均位于所述基板的上表面。
  6. 如权利要求5所述的双端型EML COC组件，其特征在于，所述第二信号线缝隙的缝宽、第三信号线缝隙的缝宽、所述第二信号线的线宽、基材的厚度和介电常数、中间参考接地以及公共接地组成第一单端共面波导结构，形成第一特征阻抗，所述第一特征阻抗为50欧姆；
    所述第一信号线缝隙的缝宽、所述第一信号线的线宽、基材的厚度和介电常数、中间参考接地以及公共接地组成第二单端共面波导结构，形成第二特征阻抗，所述第二特征阻抗为50欧姆。
  7. 如权利要求6所述的双端型EML COC组件，其特征在于，所述EML芯片的驱动芯片的特征阻抗为100欧姆，所述第一匹配电阻和所述第二匹配电阻分别采用50欧姆的单端阻抗，并形成差分100欧姆。
  8. 如权利要求1所述的双端型EML COC组件，其特征在于，所述输出接地引脚盘，包括第四输出GND引脚盘和第五输出GND引脚盘；其中，
    所述第四输出GND引脚盘、第五输出GND引脚盘、所述高频信号线输出引脚盘以及所述激光器引脚焊盘均位于所述基板的与所述EML芯片相对的另一侧，作为所述双端型EML COC组件的电输入输出接口。
  9. 如权利要求8所述的双端型EML COC组件，其特征在于，所述第一 公共接地区域、第二公共接地区域以及第三公共接地区域位于外沿区域，呈半包围的方式包围所述第二信号线缝隙、第二信号线、第二匹配电阻、第三信号线缝隙、第一信号线缝隙以及第一信号线；
    所述金锡共晶区域设置在所述第一公共接地区域的上表面，且高于所述第一公共接地区域；
    所述第一公共接地区域、第二公共接地区域、第三公共接地区域、第一信号线、第二信号线、第一匹配电阻、第二匹配电阻、高频引脚焊盘、激光器引脚焊盘、第一信号线缝隙、第二信号线缝隙、第三信号线缝隙、第四输出GND引脚盘、第五输出GND引脚盘以及高频信号线输出引脚盘均位于同一平面内，且均位于所述基板的上表面。
  10. 如权利要求9所述的双端型EML COC组件，其特征在于，所述第四输出GND引脚盘和第五输出GND引脚盘、所述高频信号线输出引脚盘以及所述第二信号线缝隙和第三信号线缝隙共同组成差分共面波导结构。
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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030034854A1 (en) * 2001-08-16 2003-02-20 Tzeng Liang D. Differential transmission line for high bandwidth signals
CN1722551A (zh) * 2004-07-12 2006-01-18 日本光进株式会社 光模块
US20190237934A1 (en) * 2018-01-31 2019-08-01 Oclaro Japan, Inc. Transmitter optical subassembly and optical module
CN112436375A (zh) * 2019-08-06 2021-03-02 朗美通日本株式会社 半导体光学设备
CN113659441A (zh) * 2021-08-16 2021-11-16 青岛海信宽带多媒体技术有限公司 一种激光器组件及光模块
CN114465084A (zh) * 2022-03-14 2022-05-10 成都新易盛通信技术股份有限公司 一种低成本高带宽的封装基板结构及光模块
CN217639660U (zh) * 2022-06-20 2022-10-21 成都旭创科技有限公司 光学组件及光发射器件
CN115220160A (zh) * 2022-06-30 2022-10-21 青岛海信宽带多媒体技术有限公司 一种光模块
CN117727732A (zh) * 2023-11-13 2024-03-19 武汉联特科技股份有限公司 双端型eml coc组件

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030034854A1 (en) * 2001-08-16 2003-02-20 Tzeng Liang D. Differential transmission line for high bandwidth signals
CN1722551A (zh) * 2004-07-12 2006-01-18 日本光进株式会社 光模块
US20190237934A1 (en) * 2018-01-31 2019-08-01 Oclaro Japan, Inc. Transmitter optical subassembly and optical module
CN112436375A (zh) * 2019-08-06 2021-03-02 朗美通日本株式会社 半导体光学设备
CN113659441A (zh) * 2021-08-16 2021-11-16 青岛海信宽带多媒体技术有限公司 一种激光器组件及光模块
CN114465084A (zh) * 2022-03-14 2022-05-10 成都新易盛通信技术股份有限公司 一种低成本高带宽的封装基板结构及光模块
CN217639660U (zh) * 2022-06-20 2022-10-21 成都旭创科技有限公司 光学组件及光发射器件
CN115220160A (zh) * 2022-06-30 2022-10-21 青岛海信宽带多媒体技术有限公司 一种光模块
CN117727732A (zh) * 2023-11-13 2024-03-19 武汉联特科技股份有限公司 双端型eml coc组件

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