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WO2025183329A1 - Thermal interface material for mobile application processor chip, and thermal interface sheet comprising same - Google Patents

Thermal interface material for mobile application processor chip, and thermal interface sheet comprising same

Info

Publication number
WO2025183329A1
WO2025183329A1 PCT/KR2024/021557 KR2024021557W WO2025183329A1 WO 2025183329 A1 WO2025183329 A1 WO 2025183329A1 KR 2024021557 W KR2024021557 W KR 2024021557W WO 2025183329 A1 WO2025183329 A1 WO 2025183329A1
Authority
WO
WIPO (PCT)
Prior art keywords
thermal interface
filler
application processor
mobile application
processor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/KR2024/021557
Other languages
French (fr)
Korean (ko)
Inventor
양혜윤
이진형
우봉식
김진명
최재권
정혜린
김보미
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tech On Co ltd
Original Assignee
Tech On Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020240029609A external-priority patent/KR102752508B1/en
Priority claimed from KR1020240029603A external-priority patent/KR102727676B1/en
Priority claimed from KR1020240029606A external-priority patent/KR102752509B1/en
Application filed by Tech On Co ltd filed Critical Tech On Co ltd
Publication of WO2025183329A1 publication Critical patent/WO2025183329A1/en
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013—Fillers, pigments or reinforcing additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/28—Nitrogen-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/38—Boron-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L53/00—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L91/00—Compositions of oils, fats or waxes; Compositions of derivatives thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L91/00—Compositions of oils, fats or waxes; Compositions of derivatives thereof
    • C08L91/06—Waxes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
    • C09K5/08—Materials not undergoing a change of physical state when used
    • C09K5/14—Solid materials, e.g. powdery or granular
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating

Definitions

  • the present invention relates to a thermal interface material for a mobile application processor chip and a thermal interface sheet including the same, and more particularly, to a thermal interface material for a mobile application processor chip having excellent thermal resistance and capable of quickly dissipating heat generated in the mobile application processor chip to the outside, as well as excellent reworkability, compressibility, and tackiness, and a thermal interface sheet including the same.
  • thermal interface materials enhance heat transfer efficiency by bonding the two surfaces of an adherend or filling in microscopic surface imperfections.
  • existing thermally conductive materials have low thermal conductivity, which hinders heat transfer and causes product deformation, making them difficult to use in electronic products.
  • PCBs printed circuit boards
  • TIMs thermal interface materials
  • an application processor (AP) chip one type of printed circuit board (PCB)
  • PCB printed circuit board
  • IP intellectual properties
  • mobile AP chips integrate the functions of a computer's CPU, memory, and GPU. Consequently, mobile AP chips not only generate more heat than typical PCBs, but also have varying levels due to the numerous auxiliary materials formed on the base substrate.
  • the present invention has been devised to solve the above problems, and the purpose of the present invention is to provide a thermal interface material for a mobile application processor chip, which has excellent thermal resistance and can quickly release heat generated from a mobile application processor chip to the outside, and also has excellent reworkability, compressibility, and tackiness, and a thermal interface sheet including the same.
  • the thermal interface material for a mobile application processor chip of the present invention includes a base material.
  • the base material may include a filler and a binder resin.
  • the filler may include a first filler, a second filler, and a third filler.
  • the filler can satisfy the following condition (1).
  • A represents the average particle diameter of the first filler
  • B represents the average particle diameter of the second filler
  • C represents the average particle diameter of the third filler
  • the filler may include at least one selected from aluminum oxide (Al 2 O 3 ), zinc oxide (ZnO), boron nitride (BN), aluminum nitride (AlN), and magnesium oxide (MgO).
  • Al 2 O 3 aluminum oxide
  • ZnO zinc oxide
  • BN boron nitride
  • AlN aluminum nitride
  • MgO magnesium oxide
  • the first filler may have an average particle diameter of 90 to 150 ⁇ m.
  • the second filler may have an average particle diameter of 11 to 45 ⁇ m.
  • the third filler may have an average particle diameter of 0.5 to 10 ⁇ m.
  • the filler can satisfy the following condition (2).
  • D represents the weight % of the first filler included in the filler of the present invention
  • E represents the weight % of the second filler included in the filler of the present invention
  • F represents the weight % of the third filler included in the filler of the present invention.
  • the filler can satisfy the following condition (3).
  • D represents the weight % of the first filler included in the filler of the present invention
  • E represents the weight % of the second filler included in the filler of the present invention
  • F represents the weight % of the third filler included in the filler of the present invention.
  • the filler may include 46.9 to 87.1 wt% of the first filler, 16.8 to 31.2 wt% of the second filler, and 6.3 to 11.7 wt% of the third filler, based on the total weight.
  • the thermal interface material for a mobile application processor chip of the present invention may further include a functional additive.
  • the thermal interface material for a mobile application processor chip of the present invention may include 0.1 to 10 parts by weight of an additive per 100 parts by weight of the base material.
  • the thermal interface sheet for the mobile application processor chip of the present invention may include the thermal interface material for the mobile application processor chip of the present invention.
  • the thermal interface sheet for the mobile application processor chip of the present invention can be manufactured by curing the thermal interface material for the mobile application processor chip of the present invention.
  • the thermal interface sheet for the mobile application processor chip of the present invention may have a thickness of 200 to 800 ⁇ m.
  • the thermal interface material for a mobile application processor chip of the present invention and the thermal interface sheet including the same, have excellent thermal resistance and can quickly release heat generated from the mobile application processor chip to the outside, and also have excellent reworkability, compressibility, and tackiness.
  • a thermal interface material for a mobile application processor chip of the present invention comprises a base material.
  • the base material of the present invention may include a filler and a binder resin.
  • the base material of the present invention may contain 83.65 to 93.65 wt% of filler, preferably 85.65 to 91.65 wt%, more preferably 87.65 to 89.65 wt%, and 6.35 to 16.35 wt%, preferably 8.35 to 14.35 wt%, more preferably 10.35 to 12.35 wt% of binder resin, based on the total wt%. If the filler is contained in an amount less than 83.65 wt%, there may be a problem with heat dissipation characteristics, and if it is contained in an amount exceeding 93.65 wt%, there may be a problem in forming the thermal interface material for the mobile application processor chip of the present invention.
  • the filler of the present invention may include at least one selected from aluminum oxide (Al 2 O 3 ), zinc oxide (ZnO), boron nitride (BN), aluminum nitride (AlN), and magnesium oxide (MgO), and preferably may include aluminum oxide (Al 2 O 3 ).
  • the filler of the present invention may include a first filler, a second filler, and a third filler.
  • the filler of the present invention may satisfy the following condition (1).
  • A represents the average particle diameter of the first filler
  • B represents the average particle diameter of the second filler
  • C represents the average particle diameter of the third filler. If condition (1) is not satisfied, the interface between filler particles increases, which may cause a problem of increased thermal resistance and decreased thermal conductivity.
  • the first filler may have an average particle diameter of 90 to 150 ⁇ m, preferably 100 to 140 ⁇ m, more preferably 110 to 130 ⁇ m
  • the second filler may have an average particle diameter of 11 to 45 ⁇ m, preferably 13 to 35 ⁇ m, more preferably 15 to 25 ⁇ m
  • the third filler may have an average particle diameter of 0.5 to 10 ⁇ m, preferably 1 to 8 ⁇ m, more preferably 1.5 to 5 ⁇ m.
  • the filler of the present invention can further satisfy the following condition (2).
  • D represents the weight % of the first filler included in the filler of the present invention
  • E represents the weight % of the second filler included in the filler of the present invention
  • F represents the weight % of the third filler included in the filler of the present invention.
  • the filler of the present invention can further satisfy the following condition (3).
  • D represents the weight % of the first filler included in the filler of the present invention
  • E represents the weight % of the second filler included in the filler of the present invention
  • F represents the weight % of the third filler included in the filler of the present invention.
  • the filler of the present invention may include, based on the total weight%, a first filler of 46.9 to 87.1 wt%, preferably 53.6 to 80.4 wt%, more preferably 60.3 to 73.7 wt%, a second filler of 16.8 to 31.2 wt%, preferably 19.2 to 28.8 wt%, more preferably 21.6 to 26.4 wt%, and a third filler of 6.3 to 11.7 wt%, preferably 7.2 to 10.8 wt%, more preferably 8.1 to 9.9 wt%.
  • the first filler is included in an amount less than 46.9 wt%, there may be a problem of increased thermal resistance, and if it is included in an amount exceeding 87.1 wt%, there may be a problem of decreased thermal conductivity due to a decreased filling ratio.
  • the binder resin of the present invention may include a styrenic thermoplastic elastomer.
  • the binder resin of the present invention may contain 42 to 78 wt%, preferably 48 to 72 wt%, and more preferably 54 to 66 wt% of a styrenic thermoplastic elastomer based on the total wt%. If the styrenic thermoplastic elastomer is contained in an amount less than 42 wt%, flexibility may increase excessively, which may cause problems with reworkability. If the styrenic thermoplastic elastomer is contained in an amount exceeding 78 wt%, surface hardness may increase, which may cause problems with increased thermal resistance.
  • the styrenic thermoplastic elastomer of the present invention may include at least one selected from a styrene-ethylene/butylene-styrene block copolymer (STYRENE-ETHYLENE/BUTYLENE-STYRENE BLOCK COPOLYMER), a styrene-butadiene-styrene block copolymer (SBS), a styrene-isobutylene-styrene block copolymer (SIBS), and a styrene-isoprene-styrene block copolymer (SIS), and preferably may include a styrene-ethylene/butylene-styrene block copolymer.
  • STYRENE-ETHYLENE/BUTYLENE-STYRENE BLOCK COPOLYMER a styrene-butadiene-styrene block copolymer
  • SIBS s
  • the styrenic thermoplastic elastomer of the present invention may be a styrene-ethylene/butylene-styrene block copolymer having a weight average molecular weight of 80,000 to 200,000, preferably 90,000 to 170,000, and more preferably 110,000 to 140,000. If the weight average molecular weight is less than 80,000, the hardness increases, which may cause problems in using it as a material for a thermal interface material for a mobile application processor chip of the present invention, and if it exceeds 200,000, the phase change time may increase excessively, which may cause problems in not exhibiting the properties of the styrene-ethylene/butylene-styrene block copolymer.
  • the styrenic thermoplastic elastomer of the present invention may be a styrene-ethylene/butylene-styrene block copolymer having a styrene content of 8 to 16 wt%, preferably 10 to 14 wt%, and more preferably 11 to 13 wt%. If the styrene content is less than 8 wt%, flexibility may increase excessively, which may cause problems with reworkability and handling, and if it exceeds 16 wt%, hardness may increase excessively, which may cause problems with increased heat resistance.
  • the styrenic thermoplastic elastomer of the present invention may be a styrene-ethylene/butylene-styrene block copolymer having a shore A hardness of 42 to 52, preferably 44 to 50, and more preferably 46 to 48.
  • the binder resin of the present invention may further include a fluidizing agent.
  • the binder resin of the present invention may include 28 to 52 wt% of the fluidizing agent, preferably 32 to 48 wt%, and more preferably 36 to 44 wt%, based on the total wt%. If the fluidizing agent is included in an amount less than 28 wt%, the phase change temperature may become excessively high, making it difficult to use as a heat-radiating material. If the fluidizing agent is included in an amount exceeding 52 wt%, the phase change temperature may become excessively low, making it difficult to store at room temperature.
  • the fluidizing agent of the present invention may include a liquid fluidizing agent and a solid fluidizing agent, and thus, the present invention may have advantages such as reworkability and/or room temperature storage by including both a liquid fluidizing agent and a solid fluidizing agent.
  • the binder resin of the present invention may include 21 to 39 wt%, preferably 24 to 36 wt%, and more preferably 27 to 33 wt%, of a liquid fluidizing agent, and 7 to 13 wt%, preferably 8 to 12 wt%, and more preferably 9 to 11 wt%, of a solid fluidizing agent, based on the total weight%.
  • the phase change temperature may be excessively high, which may cause difficulties in use as a heat-radiating material, and if the liquid fluidizing agent is included in an amount of more than 39 wt%, the phase change temperature may be excessively low, which may cause difficulties in storage at room temperature.
  • the solid fluidizing agent is included in an amount of less than 7 wt%, the phase change temperature may become excessively high, making it difficult to use as a heat-radiating material. If the solid fluidizing agent is included in an amount exceeding 13 wt%, the phase change temperature may become excessively low, making it difficult to store at room temperature.
  • the liquid type fluidizing agent may include at least one selected from paraffin oil, naphthalene oil, isoparaffin oil, and aromatic oil, and preferably may include paraffin oil.
  • the paraffin oil of the present invention may have a pour point of -20 to -10°C, preferably -17 to -13°C, a specific gravity of 0.61 to 1.14, preferably 0.69 to 1.05, more preferably 0.78 to 0.97, and a flash point of 200 to 280°C, preferably 220 to 260°C.
  • the solid fluidizing agent may preferably include paraffin wax, and may preferably include paraffin wax.
  • the paraffin wax of the present invention may have a melting point of 29 to 55°C, preferably 33 to 50°C, more preferably 37 to 46°C, and a viscosity of 3.08 to 5.72 (60°C), preferably 3.52 to 5.28 (60°C), more preferably 3.96 to 4.84 (60°C).
  • the thermal interface material for a mobile application processor chip of the present invention may further include a functional additive.
  • the functional additive may include various possible additives commonly used in the art, and preferably may include at least one selected from a defoaming agent, a coupling agent, a leveling agent, and a dispersing agent, and more preferably may include a dispersing agent and a defoaming agent.
  • the dispersing agent may include various dispersing agents commonly used in the art, and preferably may include a hydrophobic silica-containing organo-modified polysiloxane.
  • the defoaming agent may include various defoaming agents commonly used in the art, and preferably may include a hydrophobic silica-containing organo-modified polysiloxane.
  • the thermal interface material for a mobile application processor chip of the present invention may contain 0.1 to 10 parts by weight, preferably 0.5 to 5 parts by weight, and more preferably 1.0 to 3.0 parts by weight, of an additive, based on 100 parts by weight of the base material. If the additive is contained in an amount less than 0.1 parts by weight, there may be a problem that the additive does not perform its function, and if it exceeds 10 parts by weight, the content of the filler that may be included in the thermal interface material for a mobile application processor chip of the present invention may be lowered, resulting in a problem that thermal conductivity may be lowered.
  • the thermal interface material for a mobile application processor chip of the present invention may contain 0.05 to 5 parts by weight, preferably 0.5 to 1.5 parts by weight, of a dispersant, and 0.05 to 5 parts by weight, and preferably 0.2 to 1.0 parts by weight, of an antifoaming agent, based on 100 parts by weight of the base material.
  • the thermal interface sheet for a mobile application processor chip of the present invention may include the thermal interface material for a mobile application processor chip of the present invention.
  • the thermal interface sheet for a mobile application processor chip of the present invention may be manufactured by curing the thermal interface material for a mobile application processor chip of the present invention.
  • the thermal interface sheet for a mobile application processor chip of the present invention may have a thickness of 200 to 800 ⁇ m, preferably 400 to 700 ⁇ m, and more preferably 500 to 650 ⁇ m.
  • the thickness is less than 200 ⁇ m, there may be a problem in that it cannot cover all the steps formed on one side of the adherend, and if it exceeds 800 ⁇ m, there may be a problem in that it is difficult to apply it to a mobile application processor chip.
  • Example 1 Fabrication of a thermal interface material for a mobile application processor chip.
  • a thermal interface material for a mobile application processor chip was prepared by mixing 0.9 parts by weight of a dispersant (Rhodafac, RS-610) and 0.45 parts by weight of an antifoaming agent (TEGO, Airex 900) with respect to 100 parts by weight of a base material.
  • the base material used was a mixture of 88.65 wt% of filler and 11.35 wt% of binder resin based on the total weight%.
  • the filler was used in a mixture of 67 wt% of the first filler, 24 wt% of the second filler, and 9 wt% of the third filler, based on the total weight%.
  • aluminum oxide (Al 2 O 3 ) having an average particle size of 120 ⁇ m was used as the first filler
  • aluminum oxide (Al 2 O 3 ) having an average particle size of 20 ⁇ m was used as the second filler
  • 9 wt% of aluminum oxide (Al 2 O 3 ) having an average particle size of 3 ⁇ m was used as the third filler.
  • the binder resin was used as a mixture of 60 wt% of styrene-based thermoplastic elastomer, 30 wt% of liquid-type fluidizing agent, and 10 wt% of solid-type fluidizing agent, based on the total weight%.
  • styrene-ethylene/butylene-styrene block copolymer (styrene content: 12 wt%, weight average molecular weight: 126,010, shore A hardness: 47) was used as a styrenic thermoplastic elastomer, paraffin oil (pour point: -15°C, specific gravity: 0.873, flash point: 240°C) was used as a liquid fluidizing agent, and paraffin wax (melting point: 41.6°C, viscosity: 4.4 (60°C), white) was used as a solid fluidizing agent.
  • paraffin oil pour point: -15°C, specific gravity: 0.873, flash point: 240°C
  • paraffin wax melting point: 41.6°C, viscosity: 4.4 (60°C), white
  • Example 2 Fabrication of a thermal interface material for a mobile application processor chip.
  • a thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, a mixture of 45 wt% of the first filler, 38 wt% of the second filler, and 17 wt% of the third filler was used based on the total weight percentage, thereby finally manufacturing a thermal interface material for a mobile application processor chip.
  • a thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, a mixture of 9 wt% of the first filler, 24 wt% of the second filler, and 67 wt% of the third filler was used based on the total weight percentage, thereby finally manufacturing a thermal interface material for a mobile application processor chip.
  • a thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, a mixture of 24 wt% of the first filler, 67 wt% of the second filler, and 9 wt% of the third filler was used based on the total weight percentage, thereby finally manufacturing a thermal interface material for a mobile application processor chip.
  • a thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, a mixture of 79 wt% of the first filler, 15 wt% of the second filler, and 6 wt% of the third filler was used based on the total weight percentage, thereby finally manufacturing a thermal interface material for a mobile application processor chip.
  • Example 6 Fabrication of a thermal interface material for a mobile application processor chip.
  • a thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, a mixture of 55 wt% of the first filler, 33 wt% of the second filler, and 12 wt% of the third filler was used based on the total weight percentage, thereby finally manufacturing a thermal interface material for a mobile application processor chip.
  • a thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, aluminum oxide (Al 2 O 3 ) having an average particle diameter of 160 ⁇ m was used as the first filler instead of aluminum oxide (Al 2 O 3 ) having an average particle diameter of 120 ⁇ m, thereby finally manufacturing a thermal interface material for a mobile application processor chip.
  • a thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, aluminum oxide (Al 2 O 3 ) having an average particle diameter of 80 ⁇ m was used as the first filler instead of aluminum oxide (Al 2 O 3 ) having an average particle diameter of 120 ⁇ m, thereby finally manufacturing a thermal interface material for a mobile application processor chip.
  • a thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, a base material containing 84.65 wt% of filler and 15.35 wt% of binder resin was used, based on the total weight, to ultimately manufacture a thermal interface material for a mobile application processor chip.
  • Example 10 Fabrication of a thermal interface material for a mobile application processor chip.
  • a thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, the base material was mixed with 92.65 wt% of filler and 7.35 wt% of binder resin based on the total weight%, thereby finally manufacturing a thermal interface material for a mobile application processor chip.
  • Example 11 Fabrication of a thermal interface material for a mobile application processor chip.
  • a thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, a base material containing 81.65 wt% of filler and 18.35 wt% of binder resin was used, based on the total weight%, to ultimately manufacture a thermal interface material for a mobile application processor chip.
  • Example 12 Fabrication of a thermal interface material for a mobile application processor chip.
  • a thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, the base material was mixed with 95.65 wt% of filler and 4.35 wt% of binder resin based on the total weight%, thereby finally manufacturing a thermal interface material for a mobile application processor chip.
  • Example 13 Fabrication of a thermal interface material for a mobile application processor chip.
  • a thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, a styrene-butadiene-styrene block copolymer (kraton, D111) was used instead of a styrene-ethylene/butylene-styrene block copolymer, ultimately manufacturing a thermal interface material for a mobile application processor chip.
  • a styrene-butadiene-styrene block copolymer (kraton, D111) was used instead of a styrene-ethylene/butylene-styrene block copolymer, ultimately manufacturing a thermal interface material for a mobile application processor chip.
  • Example 14 Fabrication of a thermal interface material for a mobile application processor chip.
  • a thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, a styrene-isoprene-styrene block copolymer (Kraton, 14424) was used instead of a styrene-ethylene/butylene-styrene block copolymer, ultimately manufacturing the thermal interface material for a mobile application processor chip.
  • a styrene-isoprene-styrene block copolymer Kraton, 14424
  • Example 15 Fabrication of a thermal interface material for a mobile application processor chip.
  • a thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, styrene butadiene rubber (SBR) was used instead of a styrene-based thermoplastic elastomer to ultimately manufacture the thermal interface material for a mobile application processor chip.
  • SBR styrene butadiene rubber
  • a thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, only the first filler was used as a filler, and a final thermal interface material for a mobile application processor chip was manufactured.
  • a thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, only the second filler was used as a filler, and a thermal interface material for a mobile application processor chip was finally manufactured.
  • a thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, only the third filler was used as a filler, and a thermal interface material for a mobile application processor chip was finally manufactured.
  • a thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, a mixture of 67 wt% of the first filler and 36 wt% of the second filler was used based on the total weight percentage, thereby finally manufacturing a thermal interface material for a mobile application processor chip.
  • Manufacturing Examples 1 to 15 and Comparative Manufacturing Examples 1 to 4 Manufacturing of thermal interface sheets for mobile application processor chips
  • the thermal interface materials for mobile application processor chips manufactured in Examples 1 to 15 and Comparative Examples 1 to 4 were each cured with hot air at a temperature of 80°C for 10 minutes to manufacture a thermal interface sheet for mobile application processor chips having a thickness of 600 ⁇ m.
  • the thermal interface sheet for a mobile application processor chip manufactured by curing the thermal interface material for a mobile application processor chip manufactured in Example 1 is manufactured as Manufacturing Example 1
  • the thermal interface sheet for a mobile application processor chip manufactured by curing the thermal interface material for a mobile application processor chip manufactured in Example 2 is manufactured as Manufacturing Example 2
  • the thermal interface sheet for a mobile application processor chip manufactured by curing the thermal interface material for a mobile application processor chip manufactured in Example 3 is manufactured as Manufacturing Example 3
  • the thermal interface sheet for a mobile application processor chip manufactured by curing the thermal interface material for a mobile application processor chip manufactured in Example 4 is manufactured as Manufacturing Example 4
  • the thermal interface sheet for a mobile application processor chip manufactured by curing the thermal interface material for a mobile application processor chip manufactured in Example 5 is manufactured as Manufacturing Example 5, the thermal
  • thermal resistance of the thermal interface sheets manufactured in Manufacturing Examples 1 to 15 and Comparative Manufacturing Examples 1 to 4 was measured using the ASTM D5470 method, and the results are shown in Tables 1 to 4 below.
  • the compressibility of the thermal interface sheets manufactured in Manufacturing Examples 1 to 15 and Comparative Manufacturing Examples 1 to 4 was measured using the ASTM D3574 method, and is shown in Tables 1 to 4 below.
  • a printed circuit board having various steps due to the auxiliary materials formed on the base substrate was prepared, and the thermal interface materials for mobile application processor chips manufactured in Examples 1 to 15 and Comparative Examples 1 to 4 were respectively applied to one surface of the printed circuit board having the steps formed, and cured with hot air at a temperature of 80°C for 10 minutes to form a thermal interface sheet for mobile application processor chips having a thickness of 600 ⁇ m.
  • the tackiness was evaluated as A, if even a little residue of the thermal interface sheet remained on the printed circuit board, the tackiness was evaluated as B, and if the thermal interface sheet was torn, the tackiness was evaluated as C, which are shown in Tables 1 to 4 below.
  • the reworkability was determined by checking the state of the thermal interface sheet removed from the printed circuit board to determine whether it could be reused. If it was reusable, it was evaluated as ⁇ , and if it was not reusable, it was evaluated as X, which are shown in Tables 1 to 4 below.
  • the surface roughness of the thermal interface sheets manufactured in Manufacturing Examples 1 to 15 and Comparative Manufacturing Examples 1 to 4 was measured using the ASTM D4417 method, and is shown in Tables 1 to 4 below. At this time, the surface roughness was judged as good if no irregularities were observed with the naked eye on the surface of the thermal interface sheet, and as bad if irregularities were observed with the naked eye on the surface of the thermal interface sheet.
  • a first glass substrate, thermal interface materials for mobile application processor chips manufactured in each of Examples 1 to 15 and Comparative Examples 1 to 4, and a second glass substrate were sequentially laminated, and the thermal interface materials for mobile application processor chips manufactured in each of Examples 1 to 15 and Comparative Examples 1 to 4 were cured at a temperature of 80°C for 10 minutes. Whether pores were formed on the surface of the cured thermal interface materials for mobile application processor chips manufactured in each of Examples 1 to 15 and Comparative Examples 1 to 4 was visually determined, and the results are shown in Tables 1 to 4 below.
  • the thermal interface sheet manufactured using the thermal interface material manufactured in Example 1 not only had excellent reworkability, but also had low thermal resistance and a compression ratio that was above a certain level.
  • Example 2 Compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 2 not only had an increased thermal resistance but also a decreased compressibility.
  • Example 3 Compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 3 not only had an increased thermal resistance, but also had a decreased compressibility and worsened tackiness and reworkability.
  • Example 4 Compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 4 not only had an increased thermal resistance, but also a decreased compressibility, a worse tackiness, and poor surface roughness.
  • Example 5 Compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 5 not only had an increased thermal resistance but also a decreased compressibility.
  • Example 6 Compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 6 not only had increased thermal resistance, but also had decreased compressibility and poor surface roughness.
  • Example 1 Compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Comparative Example 1 not only had an increased thermal resistance, but also a decreased compressibility and poor surface roughness.
  • Example 2 Compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Comparative Example 2 not only had increased thermal resistance, but also had decreased compressibility, poor reworkability, and poor surface roughness.
  • Example 3 Compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Comparative Example 3 not only had an increased thermal resistance, but also had a decreased compressibility and worsened tackiness and reworkability.
  • the thermal interface sheet manufactured using the thermal interface material manufactured in Example 1 not only had excellent reworkability, but also had low thermal resistance and a compression ratio that was high above a certain level.
  • Example 7 Compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 7 not only had increased thermal resistance but also had poor surface roughness.
  • Example 8 In addition, compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 8 had an increased thermal resistance.
  • thermal interface sheet manufactured using the thermal interface material manufactured in Example 1 not only had excellent reworkability, but also had low thermal resistance and a compressibility that was high above a certain level. However, compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 9 had a significantly increased thermal resistance.
  • Example 10 Compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 10 not only had a lower compressibility, but also had poor tackiness and reworkability, poor surface roughness, and formed pores.
  • Example 11 Compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 11 not only had a significantly increased thermal resistance, but also had poor reworkability and formed pores.
  • Example 12 Compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 12 not only had a significantly lower compressibility, but also had poor tackiness and reworkability, poor surface roughness, and formed pores.
  • the thermal interface sheet manufactured using the thermal interface material manufactured in Example 1 not only had excellent reworkability, but also had low thermal resistance and a compression ratio that was high above a certain level.
  • Example 13 Compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 13 not only had an increased thermal resistance, but also a decreased compressibility and a worse tackiness.
  • Example 14 Compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 14 not only had an increased thermal resistance, but also a decreased compressibility and a worse reworkability.
  • Example 15 Compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 15 not only had an increased thermal resistance, but also had a decreased compressibility, deteriorated tackiness and reworkability, and formed pores.

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Abstract

The present invention relates to a thermal interface material for a mobile application processor chip and a thermal interface sheet comprising same and, more specifically, to a thermal interface material for a mobile application processor chip and a thermal interface sheet comprising same, the thermal interface material not only having excellent reworkability but also having excellent thermal resistance, an excellent compression rate, and also excellent tackiness.

Description

모바일 어플리케이션 프로세서 칩용 열 계면 물질, 이를 포함하는 열 계면 시트Thermal interface material for mobile application processor chip, thermal interface sheet comprising same

본 발명은 모바일 어플리케이션 프로세서 칩용 열 계면 물질, 이를 포함하는 열 계면 시트에 관한 것으로써, 보다 상세하게는 열저항이 우수하여 모바일 어플리케이션 프로세서 칩에서 발생하는 열을 외부로 빠르게 방출시킬 수 있을 뿐만 아니라, 리워크성이 우수하고, 압축율 및 택키성 또한 우수한 모바일 어플리케이션 프로세서 칩용 열 계면 물질, 이를 포함하는 열 계면 시트에 관한 것이다.The present invention relates to a thermal interface material for a mobile application processor chip and a thermal interface sheet including the same, and more particularly, to a thermal interface material for a mobile application processor chip having excellent thermal resistance and capable of quickly dissipating heat generated in the mobile application processor chip to the outside, as well as excellent reworkability, compressibility, and tackiness, and a thermal interface sheet including the same.

최근 전자 소자의 소형화 및 고집적화로 인해 열 밀도가 급격히 증가하여 전자부품의 수명과 신뢰성에 큰 영향을 미치고 있다. 일반적인 열 계면 물질(Thermal interface material, TIM)은 피부착물과 부착물의 두 면을 접합하거나 미세한 표면결함을 메꾸어 열전달 효율을 높이는 것으로, 기존에 개발된 열전도성 물질의 경우 낮은 열전도성을 가지고 있고, 낮은 열전도성으로 인해 열 전달을 방해하여 제품의 변형이 생겨 전자제품에 사용되기에는 어려움이 있다.The recent miniaturization and high integration of electronic devices has led to a rapid increase in thermal density, significantly impacting the lifespan and reliability of electronic components. Conventional thermal interface materials (TIMs) enhance heat transfer efficiency by bonding the two surfaces of an adherend or filling in microscopic surface imperfections. However, existing thermally conductive materials have low thermal conductivity, which hinders heat transfer and causes product deformation, making them difficult to use in electronic products.

특히, 전자기기에 포함되는 인쇄 회로 기판(Printed Circuit Board)은 소형화, 복잡화 및 집적화되면서 인쇄 회로 기판의 발열 성능이 점차 중요시되고 있다. 인쇄 회로 기판의 발열량을 감소시키기 위해서는 인쇄 회로 기판에서 발생하는 열을 빠르게 외부로 방출시켜야 하기 때문에, 인쇄 회로 기판에는 열 계면 물질(TIM : thermal interface material)이 필수적으로 사용되고 있는 실정이다.In particular, as printed circuit boards (PCBs) used in electronic devices become increasingly miniaturized, complex, and integrated, their heat dissipation performance is becoming increasingly important. To reduce the heat generated by PCBs, the heat generated must be rapidly dissipated to the outside environment. Consequently, thermal interface materials (TIMs) are essential for PCBs.

한편, 인쇄 회로 기판 중 하나인 어플리케이션 프로세서(AP ; application processor) 칩은 전자 시스템의 다수의 구성 요소들 또는 다수의 IP(intellectual property)가 집적된 집적 회로이다. 특히, 모바일 어플리케이션 프로세서 칩은 컴퓨터의 CPU, 메모리, GPU 등의 기능을 한꺼번에 가지고 있다. 이로 인해 모바일 어플리케이션 프로세서 칩은 일반적인 인쇄 회로 기판 보다 높은 발열량을 가질 뿐만 아니라, 베이스 기판 상에 형성된 수많은 부자재들로 인해 다양한 단차를 가지고 있다.Meanwhile, an application processor (AP) chip, one type of printed circuit board (PCB), is an integrated circuit that integrates multiple components or intellectual properties (IP) of an electronic system. In particular, mobile AP chips integrate the functions of a computer's CPU, memory, and GPU. Consequently, mobile AP chips not only generate more heat than typical PCBs, but also have varying levels due to the numerous auxiliary materials formed on the base substrate.

따라서, 이와 같은 어플리케이션 프로세서 칩에 최적화된 열 계면 물질의 개발이 필요한 실정이다.Therefore, there is a need to develop a thermal interface material optimized for such application processor chips.

본 발명은 상기와 같은 문제점을 해결하기 위하여 안출된 것으로, 열저항이 우수하여 모바일 어플리케이션 프로세서 칩에서 발생하는 열을 외부로 빠르게 방출시킬 수 있을 뿐만 아니라, 리워크성이 우수하고, 압축율 및 택키성 또한 우수한 모바일 어플리케이션 프로세서 칩용 열 계면 물질, 이를 포함하는 열 계면 시트를 제공하는데 목적이 있다.The present invention has been devised to solve the above problems, and the purpose of the present invention is to provide a thermal interface material for a mobile application processor chip, which has excellent thermal resistance and can quickly release heat generated from a mobile application processor chip to the outside, and also has excellent reworkability, compressibility, and tackiness, and a thermal interface sheet including the same.

상술한 과제를 해결하기 위하여, 본 발명의 모바일 어플리케이션 프로세서 칩용 열 계면 물질은 베이스 물질을 포함한다.In order to solve the above-described problem, the thermal interface material for a mobile application processor chip of the present invention includes a base material.

본 발명의 바람직한 일 실시예에 있어서, 베이스 물질은 필러(filler) 및 바인더 수지를 포함할 수 있다.In a preferred embodiment of the present invention, the base material may include a filler and a binder resin.

본 발명의 바람직한 일 실시예에 있어서, 필러는 제1필러, 제2필러 및 제3필러를 포함할 수 있다.In a preferred embodiment of the present invention, the filler may include a first filler, a second filler, and a third filler.

본 발명의 바람직한 일 실시예에 있어서, 필러는 하기 조건 (1)을 만족할 수 있다.In a preferred embodiment of the present invention, the filler can satisfy the following condition (1).

(1) A > B > C(1) A > B > C

상기 조건 (1)에 있어서, A는 제1필러의 평균입경을 나타내고, B는 제2필러의 평균입경을 나타내며, C는 제3필러의 평균입경을 나타낸다.In the above condition (1), A represents the average particle diameter of the first filler, B represents the average particle diameter of the second filler, and C represents the average particle diameter of the third filler.

본 발명의 바람직한 일 실시예에 있어서, 필러는 산화알루미늄(Al2O3), 산화아연(ZnO), 질화붕소(BN), 질화알루미늄(AlN) 및 산화마그네슘(MgO) 중에서 선택된 1종 이상을 포함할 수 있다.In a preferred embodiment of the present invention, the filler may include at least one selected from aluminum oxide (Al 2 O 3 ), zinc oxide (ZnO), boron nitride (BN), aluminum nitride (AlN), and magnesium oxide (MgO).

본 발명의 바람직한 일 실시예에 있어서, 제1필러는 평균입경이 90 ~ 150㎛일 수 있다.In a preferred embodiment of the present invention, the first filler may have an average particle diameter of 90 to 150 μm.

본 발명의 바람직한 일 실시예에 있어서, 제2필러는 평균입경이 11 ~ 45㎛일 수 있다.In a preferred embodiment of the present invention, the second filler may have an average particle diameter of 11 to 45 μm.

본 발명의 바람직한 일 실시예에 있어서, 제3필러는 평균입경이 0.5 ~ 10㎛일 수 있다.In a preferred embodiment of the present invention, the third filler may have an average particle diameter of 0.5 to 10 μm.

본 발명의 바람직한 일 실시예에 있어서, 필러는 하기 조건 (2)를 만족할 수 있다.In a preferred embodiment of the present invention, the filler can satisfy the following condition (2).

(2) D > E + F(2) D > E + F

상기 조건 (2)에 있어서, D는 본 발명의 필러에 포함된 제1필러의 중량%을 나타내고, E는 본 발명의 필러에 포함된 제2필러의 중량%을 나타내며, F는 본 발명의 필러에 포함된 제3필러의 중량%를 나타낸다In the above condition (2), D represents the weight % of the first filler included in the filler of the present invention, E represents the weight % of the second filler included in the filler of the present invention, and F represents the weight % of the third filler included in the filler of the present invention.

본 발명의 바람직한 일 실시예에 있어서, 필러는 하기 조건 (3)을 만족할 수 있다.In a preferred embodiment of the present invention, the filler can satisfy the following condition (3).

(3) 2.2 ≤ ≤ 4.2,(3) 2.2 ≤ ≤ 4.2,

상기 조건 (3)에 있어서, D는 본 발명의 필러에 포함된 제1필러의 중량%을 나타내고, E는 본 발명의 필러에 포함된 제2필러의 중량%을 나타내며, F는 본 발명의 필러에 포함된 제3필러의 중량%을 나타낸다.In the above condition (3), D represents the weight % of the first filler included in the filler of the present invention, E represents the weight % of the second filler included in the filler of the present invention, and F represents the weight % of the third filler included in the filler of the present invention.

본 발명의 바람직한 일 실시예에 있어서, 필러는 전체 중량%에 대하여, 제1필러 46.9 ~ 87.1 중량%, 제2필러 16.8 ~ 31.2 중량% 및 제3필러 6.3 ~ 11.7 중량%로 포함할 수 있다.In a preferred embodiment of the present invention, the filler may include 46.9 to 87.1 wt% of the first filler, 16.8 to 31.2 wt% of the second filler, and 6.3 to 11.7 wt% of the third filler, based on the total weight.

본 발명의 바람직한 일 실시예에 있어서, 본 발명의 모바일 어플리케이션 프로세서 칩용 열 계면 물질은 기능성 첨가제를 더 포함할 수 있다.In a preferred embodiment of the present invention, the thermal interface material for a mobile application processor chip of the present invention may further include a functional additive.

본 발명의 바람직한 일 실시예에 있어서, 본 발명의 모바일 어플리케이션 프로세서 칩용 열 계면 물질은 베이스 물질 100 중량부에 대하여, 첨가제 0.1 ~ 10 중량부를 포함할 수 있다.In a preferred embodiment of the present invention, the thermal interface material for a mobile application processor chip of the present invention may include 0.1 to 10 parts by weight of an additive per 100 parts by weight of the base material.

한편, 본 발명의 모바일 어플리케이션 프로세서 칩용 열 계면 시트는 본 발명의 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 포함할 수 있다.Meanwhile, the thermal interface sheet for the mobile application processor chip of the present invention may include the thermal interface material for the mobile application processor chip of the present invention.

구체적으로, 본 발명의 모바일 어플리케이션 프로세서 칩용 열 계면 시트는 본 발명의 모바일 어플리케이션 프로세서 칩용 열 계면 물질이 경화되어 제조될 수 있다.Specifically, the thermal interface sheet for the mobile application processor chip of the present invention can be manufactured by curing the thermal interface material for the mobile application processor chip of the present invention.

본 발명의 바람직한 일 실시예에 있어서, 본 발명의 모바일 어플리케이션 프로세서 칩용 열 계면 시트는 200 ~ 800㎛의 두께를 가질 수 있다.In a preferred embodiment of the present invention, the thermal interface sheet for the mobile application processor chip of the present invention may have a thickness of 200 to 800 μm.

본 발명의 모바일 어플리케이션 프로세서 칩용 열 계면 물질, 이를 포함하는 열 계면 시트는 열저항이 우수하여 모바일 어플리케이션 프로세서 칩에서 발생하는 열을 외부로 빠르게 방출시킬 수 있을 뿐만 아니라, 리워크성이 우수하고, 압축율 및 택키성 또한 우수하다.The thermal interface material for a mobile application processor chip of the present invention, and the thermal interface sheet including the same, have excellent thermal resistance and can quickly release heat generated from the mobile application processor chip to the outside, and also have excellent reworkability, compressibility, and tackiness.

이하, 첨부한 도면을 참고로 하여 본 발명의 실시예에 대하여 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 용이하게 실시할 수 있도록 상세히 설명한다. 본 발명은 여러 가지 상이한 형태로 구현될 수 있으며 여기에서 설명하는 실시예에 한정되지 않는다. 도면에서 본 발명을 명확하게 설명하기 위해서 설명과 관계없는 부분은 생략하였으며, 명세서 전체를 통하여 동일 또는 유사한 구성요소에 대해서는 동일한 참조부호를 부가한다.Hereinafter, with reference to the attached drawings, embodiments of the present invention will be described in detail so that those skilled in the art can easily implement the present invention. The present invention may be implemented in various different forms and is not limited to the embodiments described herein. In the drawings, parts irrelevant to the description have been omitted for clarity of description, and the same reference numerals are assigned to identical or similar components throughout the specification.

본 발명의 모바일 어플리케이션 프로세서 칩용 열 계면 물질은 베이스 물질을 포함한다.A thermal interface material for a mobile application processor chip of the present invention comprises a base material.

본 발명의 베이스 물질은 필러(filler) 및 바인더 수지를 포함할 수 있다.The base material of the present invention may include a filler and a binder resin.

구체적으로, 본 발명의 베이스 물질은 전체 중량%에 대하여, 필러(filler) 83.65 ~ 93.65 중량%, 바람직하게는 85.65 ~ 91.65 중량%, 더욱 바람직하게는 87.65 ~ 89.65 중량% 및 바인더 수지 6.35 ~ 16.35 중량%, 바람직하게는 8.35 ~ 14.35 중량%, 더욱 바람직하게는 10.35 ~ 12.35 중량%로 포함할 수 있으며, 만일 필러가 83.65 중량% 미만으로 포함하면 방열특성의 문제가 있을 수 있고, 93.65 중량%를 초과하여 포함하면 본 발명의 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 형성하는데 문제가 있을 수 있다.Specifically, the base material of the present invention may contain 83.65 to 93.65 wt% of filler, preferably 85.65 to 91.65 wt%, more preferably 87.65 to 89.65 wt%, and 6.35 to 16.35 wt%, preferably 8.35 to 14.35 wt%, more preferably 10.35 to 12.35 wt% of binder resin, based on the total wt%. If the filler is contained in an amount less than 83.65 wt%, there may be a problem with heat dissipation characteristics, and if it is contained in an amount exceeding 93.65 wt%, there may be a problem in forming the thermal interface material for the mobile application processor chip of the present invention.

한편, 본 발명의 필러는 산화알루미늄(Al2O3), 산화아연(ZnO), 질화붕소(BN), 질화알루미늄(AlN) 및 산화마그네슘(MgO) 중에서 선택된 1종 이상을 포함할 수 있고, 바람직하게는 산화알루미늄(Al2O3)을 포함할 수 있다.Meanwhile, the filler of the present invention may include at least one selected from aluminum oxide (Al 2 O 3 ), zinc oxide (ZnO), boron nitride (BN), aluminum nitride (AlN), and magnesium oxide (MgO), and preferably may include aluminum oxide (Al 2 O 3 ).

구체적으로, 본 발명의 필러는 제1필러, 제2필러 및 제3필러를 포함할 수 있다. 이 때, 본 발명의 필러는 하기 조건 (1)을 만족할 수 있다.Specifically, the filler of the present invention may include a first filler, a second filler, and a third filler. In this case, the filler of the present invention may satisfy the following condition (1).

(1) A > B > C(1) A > B > C

상기 조건 (1)에 있어서, A는 제1필러의 평균입경을 나타내고, B는 제2필러의 평균입경을 나타내며, C는 제3필러의 평균입경을 나타낸다. 만일 조건 (1)을 만족하지 않는다면 필러 입자간의 계면이 증가하게 되고, 이로 인해 열저항이 증가되어 열전도도가 낮아지는 문제가 있을 수 있다.In the above condition (1), A represents the average particle diameter of the first filler, B represents the average particle diameter of the second filler, and C represents the average particle diameter of the third filler. If condition (1) is not satisfied, the interface between filler particles increases, which may cause a problem of increased thermal resistance and decreased thermal conductivity.

또한, 제1필러는 평균입경이 90 ~ 150㎛, 바람직하게는 100 ~ 140㎛, 더욱 바람직하게는 110 ~ 130㎛일 수 있고, 제2필러는 평균입경이 11 ~ 45㎛, 바람직하게는 13 ~ 35㎛, 더욱 바람직하게는 15 ~ 25㎛일 수 있으며, 제3필러는 평균입경이 0.5 ~ 10㎛, 바람직하게는 1 ~ 8㎛, 더욱 바람직하게는 1.5 ~ 5㎛일 수 있다.In addition, the first filler may have an average particle diameter of 90 to 150 μm, preferably 100 to 140 μm, more preferably 110 to 130 μm, the second filler may have an average particle diameter of 11 to 45 μm, preferably 13 to 35 μm, more preferably 15 to 25 μm, and the third filler may have an average particle diameter of 0.5 to 10 μm, preferably 1 to 8 μm, more preferably 1.5 to 5 μm.

한편, 본 발명의 필러는 하기 조건 (2)을 더 만족할 수 있다.Meanwhile, the filler of the present invention can further satisfy the following condition (2).

(2) D > E + F(2) D > E + F

상기 조건 (2)에 있어서, D는 본 발명의 필러에 포함된 제1필러의 중량%을 나타내고, E는 본 발명의 필러에 포함된 제2필러의 중량%을 나타내며, F는 본 발명의 필러에 포함된 제3필러의 중량%를 나타낸다. 만일 조건 (2)를 만족하지 않는다면 충진율이 낮아져 본 발명의 모바일 어플리케이션 프로세서 칩용 열 계면 물질의 가공이 어렵거나, 열전도도가 낮아지는 문제가 있을 수 있다. In the above condition (2), D represents the weight % of the first filler included in the filler of the present invention, E represents the weight % of the second filler included in the filler of the present invention, and F represents the weight % of the third filler included in the filler of the present invention. If condition (2) is not satisfied, the filling ratio may be low, making it difficult to process the thermal interface material for the mobile application processor chip of the present invention, or there may be a problem of low thermal conductivity.

또한, 본 발명의 필러는 하기 조건 (3)을 더 만족할 수 있다.In addition, the filler of the present invention can further satisfy the following condition (3).

(3) 2.2 ≤ ≤ 4.2, 바람직하게는 2.5 ≤ ≤ 3.8, 더욱 바람직하게는 2.8 ≤ ≤ 3.5(3) 2.2 ≤ ≤ 4.2, preferably ≤ 2.5 ≤ 3.8, more preferably ≤ 2.8 ≤ 3.5

상기 조건 (3)에 있어서, D는 본 발명의 필러에 포함된 제1필러의 중량%을 나타내고, E는 본 발명의 필러에 포함된 제2필러의 중량%을 나타내며, F는 본 발명의 필러에 포함된 제3필러의 중량%을 나타낸다. 만일 조건 (3)에 있어서, 가 2.2 미만이면 필러 입자간의 계면이 증가하게 되고, 이로 인해 열저항이 증가되어 열전도도가 낮아지는 문제가 있을 수 있고, 4.2를 초과하면 필러 입자간의 공극이 많아지는 문제가 있을 수 있다.In the above condition (3), D represents the weight % of the first filler included in the filler of the present invention, E represents the weight % of the second filler included in the filler of the present invention, and F represents the weight % of the third filler included in the filler of the present invention. If in condition (3), If it is less than 2.2, the interface between filler particles increases, which may cause an increase in thermal resistance and a decrease in thermal conductivity. If it exceeds 4.2, there may be an increase in the number of voids between filler particles.

가장 바람직하게는, 본 발명의 필러는 전체 중량%에 대하여, 제1필러 46.9 ~ 87.1 중량%, 바람직하게는 53.6 ~ 80.4 중량%, 더욱 바람직하게는 60.3 ~ 73.7 중량%, 제2필러 16.8 ~ 31.2 중량%, 바람직하게는 19.2 ~ 28.8 중량%, 더욱 바람직하게는 21.6 ~ 26.4 중량%, 제3필러 6.3 ~ 11.7 중량%, 바람직하게는 7.2 ~ 10.8 중량%, 더욱 바람직하게는 8.1 ~ 9.9 중량%로 포함할 수 있다. 만일 제1필러를 46.9 중량% 미만으로 포함하면 열저항이 증가하는 문제가 있을 수 있고, 87.1 중량%를 초과하여 포함하면 충진율이 감소하여 열전도도가 감소하는 문제가 있을 수 있다. Most preferably, the filler of the present invention may include, based on the total weight%, a first filler of 46.9 to 87.1 wt%, preferably 53.6 to 80.4 wt%, more preferably 60.3 to 73.7 wt%, a second filler of 16.8 to 31.2 wt%, preferably 19.2 to 28.8 wt%, more preferably 21.6 to 26.4 wt%, and a third filler of 6.3 to 11.7 wt%, preferably 7.2 to 10.8 wt%, more preferably 8.1 to 9.9 wt%. If the first filler is included in an amount less than 46.9 wt%, there may be a problem of increased thermal resistance, and if it is included in an amount exceeding 87.1 wt%, there may be a problem of decreased thermal conductivity due to a decreased filling ratio.

나아가, 본 발명의 바인더 수지는 스티렌계 열가소성 엘라스토머를 포함할 수 있다.Furthermore, the binder resin of the present invention may include a styrenic thermoplastic elastomer.

구체적으로, 본 발명의 바인더 수지는 전체 중량%에 대하여, 스티렌계 열가소성 엘라스토머 42 ~ 78 중량%, 바람직하게는 48 ~ 72 중량%, 더욱 바람직하게는 54 ~ 66 중량%를 포함할 수 있으며, 만일 스티렌계 열가소성 엘라스토머를 42 중량% 미만으로 포함하면 유연성이 과도하게 증가하여 재작업성(=리워크성)의 문제가 있을 수 있고, 78 중량%를 초과하여 포함하면 표면 경도가 높아져 열저항이 증가하는 문제가 있을 수 있다.Specifically, the binder resin of the present invention may contain 42 to 78 wt%, preferably 48 to 72 wt%, and more preferably 54 to 66 wt% of a styrenic thermoplastic elastomer based on the total wt%. If the styrenic thermoplastic elastomer is contained in an amount less than 42 wt%, flexibility may increase excessively, which may cause problems with reworkability. If the styrenic thermoplastic elastomer is contained in an amount exceeding 78 wt%, surface hardness may increase, which may cause problems with increased thermal resistance.

또한, 본 발명의 스티렌계 열가소성 엘라스토머는 스티렌-에틸렌/부틸렌-스티렌 블록 코폴리머(STYRENE-ETHYLENE/BUTYLENE-STYRENE BLOCK COPOLYMER), 스티렌- 부타디엔-스티렌 블록 코폴리머(SBS), 스티렌-이소부틸렌-스티렌 블록 코폴리머(SIBS) 및 스티렌-이소프렌-스티렌 블록 코폴리머(SIS) 중에서 선택된 1종 이상을 포함할 수 있고, 바람직하게는 스티렌-에틸렌/부틸렌-스티렌 블록 코폴리머를 포함할 수 있다.In addition, the styrenic thermoplastic elastomer of the present invention may include at least one selected from a styrene-ethylene/butylene-styrene block copolymer (STYRENE-ETHYLENE/BUTYLENE-STYRENE BLOCK COPOLYMER), a styrene-butadiene-styrene block copolymer (SBS), a styrene-isobutylene-styrene block copolymer (SIBS), and a styrene-isoprene-styrene block copolymer (SIS), and preferably may include a styrene-ethylene/butylene-styrene block copolymer.

가장 바람직하게, 본 발명의 스티렌계 열가소성 엘라스토머는 중량평균분자량이 80,000 ~ 200,000, 바람직하게는 90,000 ~ 170,000, 더욱 바람직하게는 110,000 ~ 140,000인 스티렌-에틸렌/부틸렌-스티렌 블록 코폴리머일 수 있다. 만일 중량평균분자량이 80,000 미만이면 경도가 증가하여, 본 발명의 모바일 어플리케이션 프로세서 칩용 열 계면 물질의 소재로 사용하는데 문제가 있을 수 있고, 200,000를 초과하면 상변화 시간이 과도하게 증가하여, 스티렌-에틸렌/부틸렌-스티렌 블록 코폴리머가 가지는 특성을 발휘하지 못하는 문제가 있을 수 있다. 또한, 본 발명의 스티렌계 열가소성 엘라스토머는 스티렌 함량이 8 ~ 16 중량%, 바람직하게는 10 ~ 14 중량%, 더욱 바람직하게는 11 ~ 13 중량%인 스티렌-에틸렌/부틸렌-스티렌 블록 코폴리머일 수 있다. 만일 스티렌 함량이 8 중량% 미만이면 유연성이 과도하게 증가하여 재작업성(=리워크성)의 문제가 있을 뿐만 아니라, 취급성의 문제가 있을 수 있고, 16 중량%를 초과하면 경도가 과도하게 증가하여 열저항이 증가하는 문제가 있을 수 있다. 또한, 본 발명의 스티렌계 열가소성 엘라스토머는 shore A 경도가 42 ~ 52, 바람직하게는 44 ~ 50, 더욱 바람직하게는 46 ~ 48인 스티렌-에틸렌/부틸렌-스티렌 블록 코폴리머일 수 있다. Most preferably, the styrenic thermoplastic elastomer of the present invention may be a styrene-ethylene/butylene-styrene block copolymer having a weight average molecular weight of 80,000 to 200,000, preferably 90,000 to 170,000, and more preferably 110,000 to 140,000. If the weight average molecular weight is less than 80,000, the hardness increases, which may cause problems in using it as a material for a thermal interface material for a mobile application processor chip of the present invention, and if it exceeds 200,000, the phase change time may increase excessively, which may cause problems in not exhibiting the properties of the styrene-ethylene/butylene-styrene block copolymer. In addition, the styrenic thermoplastic elastomer of the present invention may be a styrene-ethylene/butylene-styrene block copolymer having a styrene content of 8 to 16 wt%, preferably 10 to 14 wt%, and more preferably 11 to 13 wt%. If the styrene content is less than 8 wt%, flexibility may increase excessively, which may cause problems with reworkability and handling, and if it exceeds 16 wt%, hardness may increase excessively, which may cause problems with increased heat resistance. In addition, the styrenic thermoplastic elastomer of the present invention may be a styrene-ethylene/butylene-styrene block copolymer having a shore A hardness of 42 to 52, preferably 44 to 50, and more preferably 46 to 48.

또한, 본 발명의 바인더 수지는 유동화제를 더 포함할 수 있다. 구체적으로, 본 발명의 바인더 수지는 전체 중량%에 대하여, 유동화제 28 ~ 52 중량%, 바람직하게는 32 ~ 48 중량%, 더욱 바람직하게는 36 ~ 44 중량%를 포함할 수 있으며, 만일 유동화제를 28 중량% 미만으로 포함하면 상변화 온도가 과도하게 높아져 방열소재로의 사용이 어려운 문제가 있을 수 있고, 52 중량%를 초과하여 포함하면 상변화 온도가 과도하게 낮아져 상온에서의 보관이 어려운 문제가 있을 수 있다.In addition, the binder resin of the present invention may further include a fluidizing agent. Specifically, the binder resin of the present invention may include 28 to 52 wt% of the fluidizing agent, preferably 32 to 48 wt%, and more preferably 36 to 44 wt%, based on the total wt%. If the fluidizing agent is included in an amount less than 28 wt%, the phase change temperature may become excessively high, making it difficult to use as a heat-radiating material. If the fluidizing agent is included in an amount exceeding 52 wt%, the phase change temperature may become excessively low, making it difficult to store at room temperature.

한편, 본 발명의 유동화제는 액상형 유동화제 및 고상형 유동화제를 포함할 수 있으며, 이처럼, 본 발명은 액상형 유동화제 및 고상형 유동화제를 모두 포함함으로서 재작업성(=리워크성) 및/또는 상온 보관성 등의 장점이 있을 수 있다. 구체적으로, 본 발명의 바인더 수지는 전체 중량%에 대하여, 액상형 유동화제 21 ~ 39 중량%, 바람직하게는 24 ~ 36 중량%, 더욱 바람직하게는 27 ~ 33 중량%, 고상형 유동화제 7 ~ 13 중량%, 바람직하게는 8 ~ 12 중량%, 더욱 바람직하게는 9 ~ 11 중량%를 포함할 수 있으며, 만일 액상형 유동화제를 21 중량% 미만으로 포함하면 상변화 온도가 과도하게 높아져 방열소재로의 사용이 어려운 문제가 있을 수 있고, 39 중량%를 초과하여 포함하면 상변화 온도가 과도하게 낮아져 상온에서의 보관이 어려운 문제가 있을 수 있다. 또한, 고상형 유동화제를 7 중량% 미만으로 포함하면 상변화 온도가 과도하게 높아져 방열소재로의 사용이 어려운 문제가 있을 수 있고, 13 중량%를 초과하여 포함하면 상변화 온도가 과도하게 낮아져 상온에서의 보관이 어려운 문제가 있을 수 있다. Meanwhile, the fluidizing agent of the present invention may include a liquid fluidizing agent and a solid fluidizing agent, and thus, the present invention may have advantages such as reworkability and/or room temperature storage by including both a liquid fluidizing agent and a solid fluidizing agent. Specifically, the binder resin of the present invention may include 21 to 39 wt%, preferably 24 to 36 wt%, and more preferably 27 to 33 wt%, of a liquid fluidizing agent, and 7 to 13 wt%, preferably 8 to 12 wt%, and more preferably 9 to 11 wt%, of a solid fluidizing agent, based on the total weight%. If the liquid fluidizing agent is included in an amount of less than 21 wt%, the phase change temperature may be excessively high, which may cause difficulties in use as a heat-radiating material, and if the liquid fluidizing agent is included in an amount of more than 39 wt%, the phase change temperature may be excessively low, which may cause difficulties in storage at room temperature. In addition, if the solid fluidizing agent is included in an amount of less than 7 wt%, the phase change temperature may become excessively high, making it difficult to use as a heat-radiating material. If the solid fluidizing agent is included in an amount exceeding 13 wt%, the phase change temperature may become excessively low, making it difficult to store at room temperature.

또한, 액상형 유동화제는 파라핀 오일(paraffin oil), 나프탈렌계 오일, 이소파라핀 오일 및 아로마틱계 오일 중에서 선택된 1종 이상을 포함할 수 있고, 바람직하게는 파라핀 오일을 포함할 수 있다.In addition, the liquid type fluidizing agent may include at least one selected from paraffin oil, naphthalene oil, isoparaffin oil, and aromatic oil, and preferably may include paraffin oil.

가장 바람직하게, 본 발명의 파라핀 오일은 유동점 -20 ~ -10℃, 바람직하게는 -17 ~ -13℃, 비중 0.61 ~ 1.14, 바람직하게는 0.69 ~ 1.05, 더욱 바람직하게는 0.78 ~ 0.97, 인화점 200 ~ 280℃, 바람직하게는 220 ~ 260℃일 수 있다.Most preferably, the paraffin oil of the present invention may have a pour point of -20 to -10°C, preferably -17 to -13°C, a specific gravity of 0.61 to 1.14, preferably 0.69 to 1.05, more preferably 0.78 to 0.97, and a flash point of 200 to 280°C, preferably 220 to 260°C.

또한, 고상형 유동화제는 바람직하게 파라핀 왁스(paraffin wax)를 포함할 수 있고, 바람직하게는 파라핀 왁스 포함할 수 있다.Additionally, the solid fluidizing agent may preferably include paraffin wax, and may preferably include paraffin wax.

가장 바람직하게, 본 발명의 파라핀 왁스는 녹는점 29 ~ 55℃, 바람직하게는 33 ~ 50℃, 더욱 바람직하게는 37 ~ 46℃, 점도 3.08 ~ 5.72(60℃), 바람직하게는 3.52 ~ 5.28(60℃), 더욱 바람직하게는 3.96 ~ 4.84(60℃)일 수 있다.Most preferably, the paraffin wax of the present invention may have a melting point of 29 to 55°C, preferably 33 to 50°C, more preferably 37 to 46°C, and a viscosity of 3.08 to 5.72 (60°C), preferably 3.52 to 5.28 (60°C), more preferably 3.96 to 4.84 (60°C).

나아가, 본 발명의 모바일 어플리케이션 프로세서 칩용 열 계면 물질은 기능성 첨가제를 더 포함할 수 있다. 이 때, 기능성 첨가제는 당업계에서 일반적으로 사용하는 다양한 가능성 첨가제를 포함할 수 있으며, 바람직하게는 소포제, 커플링제, 레벨링제 및 분산제 중에서 선택된 1종 이상을 포함할 수 있고, 더욱 바람직하게는 분산제 및 소포제를 포함할 수 있다. 또한, 분산제는 당업계에서 일반적으로 사용하는 다양한 분산제를 포함할 수 있으며, 바람직하게는 소수성 실리카 함유 유기변성 폴리실록산을 포함할 수 있다. 또한, 소포제는 당업계에서 일반적으로 사용하는 다양한 소포제를 포함할 수 있으며, 바람직하게는 소수성 실리카 함유 유기변성 폴리실록산을 포함할 수 있다. Furthermore, the thermal interface material for a mobile application processor chip of the present invention may further include a functional additive. At this time, the functional additive may include various possible additives commonly used in the art, and preferably may include at least one selected from a defoaming agent, a coupling agent, a leveling agent, and a dispersing agent, and more preferably may include a dispersing agent and a defoaming agent. In addition, the dispersing agent may include various dispersing agents commonly used in the art, and preferably may include a hydrophobic silica-containing organo-modified polysiloxane. In addition, the defoaming agent may include various defoaming agents commonly used in the art, and preferably may include a hydrophobic silica-containing organo-modified polysiloxane.

또한, 본 발명의 모바일 어플리케이션 프로세서 칩용 열 계면 물질은 베이스 물질 100 중량부에 대하여, 첨가제 0.1 ~ 10 중량부, 바람직하게는 0.5 ~ 5 중량부, 더욱 바람직하게는 1.0 ~ 3.0 중량부를 포함할 수 있다. 만일, 첨가제를 0.1 중량부 미만으로 포함하면 첨가제의 기능을 발휘하지 못하는 문제가 있을 수 있고, 10 중량부를 초과하면 본 발명의 모바일 어플리케이션 프로세서 칩용 열 계면 물질에 포함될 수 있는 필러의 함량이 낮아져 열전도도가 낮아지는 문제가 있을 수 있다. 구체적으로, 본 발명의 모바일 어플리케이션 프로세서 칩용 열 계면 물질은 베이스 물질 100 중량부에 대하여, 분산제 0.05 ~ 5 중량부, 바람직하게는 0.5 ~ 1.5 중량부 및 소포제 0.05 ~ 5 중량부, 바람직하게는 0.2 ~ 1.0 중량부를 포함할 수 있다.In addition, the thermal interface material for a mobile application processor chip of the present invention may contain 0.1 to 10 parts by weight, preferably 0.5 to 5 parts by weight, and more preferably 1.0 to 3.0 parts by weight, of an additive, based on 100 parts by weight of the base material. If the additive is contained in an amount less than 0.1 parts by weight, there may be a problem that the additive does not perform its function, and if it exceeds 10 parts by weight, the content of the filler that may be included in the thermal interface material for a mobile application processor chip of the present invention may be lowered, resulting in a problem that thermal conductivity may be lowered. Specifically, the thermal interface material for a mobile application processor chip of the present invention may contain 0.05 to 5 parts by weight, preferably 0.5 to 1.5 parts by weight, of a dispersant, and 0.05 to 5 parts by weight, and preferably 0.2 to 1.0 parts by weight, of an antifoaming agent, based on 100 parts by weight of the base material.

한편, 본 발명의 모바일 어플리케이션 프로세서 칩용 열 계면 시트는 본 발명의 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 포함할 수 있다. 구체적으로 본 발명의 모바일 어플리케이션 프로세서 칩용 열 계면 시트는 본 발명의 모바일 어플리케이션 프로세서 칩용 열 계면 물질이 경화되어 제조된 것일 수 있다. 또한, 본 발명의 모바일 어플리케이션 프로세서 칩용 열 계면 시트는 200 ~ 800㎛, 바람직하게는 400 ~ 700㎛, 더욱 바람직하게는 500 ~ 650㎛의 두께를 가질 수 있으며, 만일 두께가 200㎛ 미만이면 피착제 일면에 형성된 단차를 모두 커버하지 못하는 문제가 있을 수 있고, 800㎛를 초과하면 모바일 어플리케이션 프로세서 칩에 적용하게 어려운 문제가 있을 수 있다.Meanwhile, the thermal interface sheet for a mobile application processor chip of the present invention may include the thermal interface material for a mobile application processor chip of the present invention. Specifically, the thermal interface sheet for a mobile application processor chip of the present invention may be manufactured by curing the thermal interface material for a mobile application processor chip of the present invention. In addition, the thermal interface sheet for a mobile application processor chip of the present invention may have a thickness of 200 to 800 μm, preferably 400 to 700 μm, and more preferably 500 to 650 μm. If the thickness is less than 200 μm, there may be a problem in that it cannot cover all the steps formed on one side of the adherend, and if it exceeds 800 μm, there may be a problem in that it is difficult to apply it to a mobile application processor chip.

이상에서 본 발명에 대하여 구현예를 중심으로 설명하였으나 이는 단지 예시일 뿐 본 발명의 구현예를 한정하는 것이 아니며, 본 발명의 실시예가 속하는 분야의 통상의 지식을 가진 자라면 본 발명의 본질적인 특성을 벗어나지 않는 범위에서 이상에 예시되지 않은 여러 가지의 변형과 응용이 가능함을 알 수 있을 것이다. 예를 들어, 본 발명의 구현예에 구체적으로 나타난 각 구성 요소는 변형하여 실시할 수 있는 것이다. 그리고 이러한 변형과 응용에 관계된 차이점들은 첨부된 청구 범위에서 규정하는 본 발명의 범위에 포함되는 것으로 해석되어야 할 것이다. Although the present invention has been described above with reference to embodiments, these are merely examples and are not intended to limit the present invention to the embodiments. Those skilled in the art to which the present invention pertains will appreciate that various modifications and applications not exemplified above are possible without departing from the essential characteristics of the present invention. For example, each component specifically shown in the embodiments of the present invention can be modified and implemented. In addition, differences related to such modifications and applications should be interpreted as being included within the scope of the present invention defined in the appended claims.

실시예 1 : 모바일 어플리케이션 프로세서 칩용 열 계면 물질의 제조 Example 1: Fabrication of a thermal interface material for a mobile application processor chip.

베이스 물질 100 중량부에 대하여, 분산제(Rhodafac, RS-610) 0.9 중량부 및 소포제(TEGO, Airex 900) 0.45 중량부를 혼합하여 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다. A thermal interface material for a mobile application processor chip was prepared by mixing 0.9 parts by weight of a dispersant (Rhodafac, RS-610) and 0.45 parts by weight of an antifoaming agent (TEGO, Airex 900) with respect to 100 parts by weight of a base material.

이 때, 베이스 물질은 전체 중량%에 대하여, 필러(filler) 88.65 중량% 및 바인더 수지 11.35 중량%가 혼합된 것을 사용하였다. At this time, the base material used was a mixture of 88.65 wt% of filler and 11.35 wt% of binder resin based on the total weight%.

또한, 필러는 전체 중량%에 대하여, 제1필러 67 중량%, 제2필러 24 중량% 및 제3필러 9 중량%가 혼합된 것을 사용하였다. 또한, 제1필러로서 평균입경이 120㎛인 산화알루미늄(Al2O3)을 사용하였고, 제2필러로서 평균입경이 20㎛인 산화알루미늄(Al2O3)을 사용하였으며, 제3필러로서 평균입경이 3㎛인 산화알루미늄(Al2O3) 9 중량%가 혼합된 것을 사용하였다. In addition, the filler was used in a mixture of 67 wt% of the first filler, 24 wt% of the second filler, and 9 wt% of the third filler, based on the total weight%. In addition, aluminum oxide (Al 2 O 3 ) having an average particle size of 120 μm was used as the first filler, aluminum oxide (Al 2 O 3 ) having an average particle size of 20 μm was used as the second filler, and 9 wt% of aluminum oxide (Al 2 O 3 ) having an average particle size of 3 μm was used as the third filler.

또한, 바인더 수지는 전체 중량%에 대하여, 스티렌계 열가소성 엘라스토머 60 중량%, 액상형 유동화제 30 중량% 및 고상형 유동화제 10 중량%가 혼합된 것을 사용하였다. In addition, the binder resin was used as a mixture of 60 wt% of styrene-based thermoplastic elastomer, 30 wt% of liquid-type fluidizing agent, and 10 wt% of solid-type fluidizing agent, based on the total weight%.

또한, 스티렌계 열가소성 엘라스토머로 스티렌-에틸렌/부틸렌-스티렌 블록 코폴리머(스티렌 함량 : 12 중량%, 중량평균분자량 : 126,010, shore A 경도 : 47)를 사용하였고, 액상형 유동화제로 파라핀 오일(paraffin oil, 유동점 : -15℃, 비중 : 0.873, 인화점 : 240℃)를 사용하였으며, 고상형 유동화제로 파라핀 왁스(paraffin wax, 녹는점 : 41.6℃, 점도 : 4.4(60℃), 백색)를 사용하였다.In addition, styrene-ethylene/butylene-styrene block copolymer (styrene content: 12 wt%, weight average molecular weight: 126,010, shore A hardness: 47) was used as a styrenic thermoplastic elastomer, paraffin oil (pour point: -15°C, specific gravity: 0.873, flash point: 240°C) was used as a liquid fluidizing agent, and paraffin wax (melting point: 41.6°C, viscosity: 4.4 (60°C), white) was used as a solid fluidizing agent.

실시예 2 : 모바일 어플리케이션 프로세서 칩용 열 계면 물질의 제조 Example 2: Fabrication of a thermal interface material for a mobile application processor chip.

실시예 1과 동일한 방법으로, 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다. 다만, 실시예 1과 달리 필러로서 전체 중량%에 대하여, 제1필러 45 중량%, 제2필러 38 중량% 및 제3필러 17 중량%가 혼합된 것을 사용하여, 최종적으로 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다.A thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, a mixture of 45 wt% of the first filler, 38 wt% of the second filler, and 17 wt% of the third filler was used based on the total weight percentage, thereby finally manufacturing a thermal interface material for a mobile application processor chip.

실시예 3 : 모바일 어플리케이션 프로세서 칩용 열 계면 물질의 제조 Example 3: Fabrication of thermal interface material for mobile application processor chip

실시예 1과 동일한 방법으로, 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다. 다만, 실시예 1과 달리 필러로서 전체 중량%에 대하여, 제1필러 9 중량%, 제2필러 24 중량% 및 제3필러 67 중량%가 혼합된 것을 사용하여, 최종적으로 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다.A thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, a mixture of 9 wt% of the first filler, 24 wt% of the second filler, and 67 wt% of the third filler was used based on the total weight percentage, thereby finally manufacturing a thermal interface material for a mobile application processor chip.

실시예 4 : 모바일 어플리케이션 프로세서 칩용 열 계면 물질의 제조 Example 4: Fabrication of thermal interface material for mobile application processor chip

실시예 1과 동일한 방법으로, 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다. 다만, 실시예 1과 달리 필러로서 전체 중량%에 대하여, 제1필러 24 중량%, 제2필러 67 중량% 및 제3필러 9 중량%가 혼합된 것을 사용하여, 최종적으로 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다.A thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, a mixture of 24 wt% of the first filler, 67 wt% of the second filler, and 9 wt% of the third filler was used based on the total weight percentage, thereby finally manufacturing a thermal interface material for a mobile application processor chip.

실시예 5 : 모바일 어플리케이션 프로세서 칩용 열 계면 물질의 제조 Example 5: Fabrication of thermal interface material for mobile application processor chip

실시예 1과 동일한 방법으로, 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다. 다만, 실시예 1과 달리 필러로서 전체 중량%에 대하여, 제1필러 79 중량%, 제2필러 15 중량% 및 제3필러 6 중량%가 혼합된 것을 사용하여, 최종적으로 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다.A thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, a mixture of 79 wt% of the first filler, 15 wt% of the second filler, and 6 wt% of the third filler was used based on the total weight percentage, thereby finally manufacturing a thermal interface material for a mobile application processor chip.

실시예 6 : 모바일 어플리케이션 프로세서 칩용 열 계면 물질의 제조 Example 6: Fabrication of a thermal interface material for a mobile application processor chip.

실시예 1과 동일한 방법으로, 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다. 다만, 실시예 1과 달리 필러로서 전체 중량%에 대하여, 제1필러 55 중량%, 제2필러 33 중량% 및 제3필러 12 중량%가 혼합된 것을 사용하여, 최종적으로 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다.A thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, a mixture of 55 wt% of the first filler, 33 wt% of the second filler, and 12 wt% of the third filler was used based on the total weight percentage, thereby finally manufacturing a thermal interface material for a mobile application processor chip.

실시예 7 : 모바일 어플리케이션 프로세서 칩용 열 계면 물질의 제조 Example 7: Fabrication of thermal interface material for mobile application processor chip

실시예 1과 동일한 방법으로, 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다. 다만, 실시예 1과 달리 제1필러로서 평균입경이 120㎛인 산화알루미늄(Al2O3)이 아닌 평균입경이 160㎛인 산화알루미늄(Al2O3)을 사용하여, 최종적으로 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다.A thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, aluminum oxide (Al 2 O 3 ) having an average particle diameter of 160 μm was used as the first filler instead of aluminum oxide (Al 2 O 3 ) having an average particle diameter of 120 μm, thereby finally manufacturing a thermal interface material for a mobile application processor chip.

실시예 8 : 모바일 어플리케이션 프로세서 칩용 열 계면 물질의 제조 Example 8: Fabrication of thermal interface material for mobile application processor chip

실시예 1과 동일한 방법으로, 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다. 다만, 실시예 1과 달리 제1필러로서 평균입경이 120㎛인 산화알루미늄(Al2O3)이 아닌 평균입경이 80㎛인 산화알루미늄(Al2O3)을 사용하여, 최종적으로 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다.A thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, aluminum oxide (Al 2 O 3 ) having an average particle diameter of 80 μm was used as the first filler instead of aluminum oxide (Al 2 O 3 ) having an average particle diameter of 120 μm, thereby finally manufacturing a thermal interface material for a mobile application processor chip.

실시예 9 : 모바일 어플리케이션 프로세서 칩용 열 계면 물질의 제조 Example 9: Fabrication of thermal interface material for mobile application processor chip

실시예 1과 동일한 방법으로, 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다. 다만, 실시예 1과 달리 베이스 물질은 전체 중량%에 대하여, 필러(filler) 84.65 중량% 및 바인더 수지 15.35 중량%가 혼합된 것을 사용하여, 최종적으로 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다.A thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, a base material containing 84.65 wt% of filler and 15.35 wt% of binder resin was used, based on the total weight, to ultimately manufacture a thermal interface material for a mobile application processor chip.

실시예 10 : 모바일 어플리케이션 프로세서 칩용 열 계면 물질의 제조 Example 10: Fabrication of a thermal interface material for a mobile application processor chip.

실시예 1과 동일한 방법으로, 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다. 다만, 실시예 1과 달리 베이스 물질은 전체 중량%에 대하여, 필러(filler) 92.65 중량% 및 바인더 수지 7.35 중량%가 혼합된 것을 사용하여, 최종적으로 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다.A thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, the base material was mixed with 92.65 wt% of filler and 7.35 wt% of binder resin based on the total weight%, thereby finally manufacturing a thermal interface material for a mobile application processor chip.

실시예 11 : 모바일 어플리케이션 프로세서 칩용 열 계면 물질의 제조 Example 11: Fabrication of a thermal interface material for a mobile application processor chip.

실시예 1과 동일한 방법으로, 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다. 다만, 실시예 1과 달리 베이스 물질은 전체 중량%에 대하여, 필러(filler) 81.65 중량% 및 바인더 수지 18.35 중량%가 혼합된 것을 사용하여, 최종적으로 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다.A thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, a base material containing 81.65 wt% of filler and 18.35 wt% of binder resin was used, based on the total weight%, to ultimately manufacture a thermal interface material for a mobile application processor chip.

실시예 12 : 모바일 어플리케이션 프로세서 칩용 열 계면 물질의 제조 Example 12: Fabrication of a thermal interface material for a mobile application processor chip.

실시예 1과 동일한 방법으로, 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다. 다만, 실시예 1과 달리 베이스 물질은 전체 중량%에 대하여, 필러(filler) 95.65 중량% 및 바인더 수지 4.35 중량%가 혼합된 것을 사용하여, 최종적으로 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다.A thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, the base material was mixed with 95.65 wt% of filler and 4.35 wt% of binder resin based on the total weight%, thereby finally manufacturing a thermal interface material for a mobile application processor chip.

실시예 13 : 모바일 어플리케이션 프로세서 칩용 열 계면 물질의 제조 Example 13: Fabrication of a thermal interface material for a mobile application processor chip.

실시예 1과 동일한 방법으로, 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다. 다만, 실시예 1과 달리 스티렌-에틸렌/부틸렌-스티렌 블록 코폴리머가 아닌 스티렌-부타디엔-스티렌 블록 코폴리머(kraton, D111)를 사용하여, 최종적으로 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다.A thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, a styrene-butadiene-styrene block copolymer (kraton, D111) was used instead of a styrene-ethylene/butylene-styrene block copolymer, ultimately manufacturing a thermal interface material for a mobile application processor chip.

실시예 14 : 모바일 어플리케이션 프로세서 칩용 열 계면 물질의 제조 Example 14: Fabrication of a thermal interface material for a mobile application processor chip.

실시예 1과 동일한 방법으로, 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다. 다만, 실시예 1과 달리 스티렌-에틸렌/부틸렌-스티렌 블록 코폴리머가 아닌 스티렌-이소프렌-스티렌 블록 코폴리머(Kraton, 14424)를 사용하여, 최종적으로 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다.A thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, a styrene-isoprene-styrene block copolymer (Kraton, 14424) was used instead of a styrene-ethylene/butylene-styrene block copolymer, ultimately manufacturing the thermal interface material for a mobile application processor chip.

실시예 15 : 모바일 어플리케이션 프로세서 칩용 열 계면 물질의 제조 Example 15: Fabrication of a thermal interface material for a mobile application processor chip.

실시예 1과 동일한 방법으로, 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다. 다만, 실시예 1과 달리 스티렌계 열가소성 엘라스토머가 아닌 스티렌 부타디엔 고무(SBR ; Styrene Butadiene Rubber)를 사용하여, 최종적으로 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다.A thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, styrene butadiene rubber (SBR) was used instead of a styrene-based thermoplastic elastomer to ultimately manufacture the thermal interface material for a mobile application processor chip.

비교예 1 : 모바일 어플리케이션 프로세서 칩용 열 계면 물질의 제조 Comparative Example 1: Fabrication of Thermal Interface Material for Mobile Application Processor Chip

실시예 1과 동일한 방법으로, 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다. 다만, 실시예 1과 달리 필러로서 제1필러만 사용하여, 최종적으로 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다.A thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, only the first filler was used as a filler, and a final thermal interface material for a mobile application processor chip was manufactured.

비교예 2 : 모바일 어플리케이션 프로세서 칩용 열 계면 물질의 제조 Comparative Example 2: Fabrication of Thermal Interface Material for Mobile Application Processor Chip

실시예 1과 동일한 방법으로, 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다. 다만, 실시예 1과 달리 필러로서 제2필러만 사용하여, 최종적으로 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다.A thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, only the second filler was used as a filler, and a thermal interface material for a mobile application processor chip was finally manufactured.

비교예 3 : 모바일 어플리케이션 프로세서 칩용 열 계면 물질의 제조 Comparative Example 3: Fabrication of Thermal Interface Material for Mobile Application Processor Chip

실시예 1과 동일한 방법으로, 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다. 다만, 실시예 1과 달리 필러로서 제3필러만 사용하여, 최종적으로 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다.A thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, only the third filler was used as a filler, and a thermal interface material for a mobile application processor chip was finally manufactured.

비교예 4 : 모바일 어플리케이션 프로세서 칩용 열 계면 물질의 제조 Comparative Example 4: Fabrication of Thermal Interface Material for Mobile Application Processor Chip

실시예 1과 동일한 방법으로, 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다. 다만, 실시예 1과 달리 필러로서 전체 중량%에 대하여, 제1필러 67 중량% 및 제2필러 36 중량%가 혼합된 것을 사용하여, 최종적으로 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 제조하였다.A thermal interface material for a mobile application processor chip was manufactured using the same method as in Example 1. However, unlike Example 1, a mixture of 67 wt% of the first filler and 36 wt% of the second filler was used based on the total weight percentage, thereby finally manufacturing a thermal interface material for a mobile application processor chip.

제조예 1 ~ 15 및 비교제조예 1 ~ 4 : 모바일 어플리케이션 프로세서 칩용 열 계면 시트의 제조 Manufacturing Examples 1 to 15 and Comparative Manufacturing Examples 1 to 4: Manufacturing of thermal interface sheets for mobile application processor chips

실시예 1 ~ 15 및 비교예 1 ~ 4에서 제조한 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 각각 80℃의 온도로 10분동안 열풍 경화시켜 600㎛의 두께를 가지는 모바일 어플리케이션 프로세서 칩용 열 계면 시트를 제조하였다. 이 때, 실시예 1에서 제조한 모바일 어플리케이션 프로세서 칩용 열 계면 물질이 경화되어 제조된 모바일 어플리케이션 프로세서 칩용 열 계면 시트는 제조예 1로, 실시예 2에서 제조한 모바일 어플리케이션 프로세서 칩용 열 계면 물질이 경화되어 제조된 모바일 어플리케이션 프로세서 칩용 열 계면 시트는 제조예 2로, 실시예 3에서 제조한 모바일 어플리케이션 프로세서 칩용 열 계면 물질이 경화되어 제조된 모바일 어플리케이션 프로세서 칩용 열 계면 시트는 제조예 3으로, 실시예 4에서 제조한 모바일 어플리케이션 프로세서 칩용 열 계면 물질이 경화되어 제조된 모바일 어플리케이션 프로세서 칩용 열 계면 시트는 제조예 4로, 실시예 5에서 제조한 모바일 어플리케이션 프로세서 칩용 열 계면 물질이 경화되어 제조된 모바일 어플리케이션 프로세서 칩용 열 계면 시트는 제조예 5로, 실시예 6에서 제조한 모바일 어플리케이션 프로세서 칩용 열 계면 물질이 경화되어 제조된 모바일 어플리케이션 프로세서 칩용 열 계면 시트는 제조예 6으로, 실시예 7에서 제조한 모바일 어플리케이션 프로세서 칩용 열 계면 물질이 경화되어 제조된 모바일 어플리케이션 프로세서 칩용 열 계면 시트는 제조예 7로, 실시예 8에서 제조한 모바일 어플리케이션 프로세서 칩용 열 계면 물질이 경화되어 제조된 모바일 어플리케이션 프로세서 칩용 열 계면 시트는 제조예 8로, 실시예 9에서 제조한 모바일 어플리케이션 프로세서 칩용 열 계면 물질이 경화되어 제조된 모바일 어플리케이션 프로세서 칩용 열 계면 시트는 제조예 9로, 실시예 10에서 제조한 모바일 어플리케이션 프로세서 칩용 열 계면 물질이 경화되어 제조된 모바일 어플리케이션 프로세서 칩용 열 계면 시트는 제조예 10으로, 실시예 11에서 제조한 모바일 어플리케이션 프로세서 칩용 열 계면 물질이 경화되어 제조된 모바일 어플리케이션 프로세서 칩용 열 계면 시트는 제조예 11로, 실시예 12에서 제조한 모바일 어플리케이션 프로세서 칩용 열 계면 물질이 경화되어 제조된 모바일 어플리케이션 프로세서 칩용 열 계면 시트는 제조예 12로, 실시예 13에서 제조한 모바일 어플리케이션 프로세서 칩용 열 계면 물질이 경화되어 제조된 모바일 어플리케이션 프로세서 칩용 열 계면 시트는 제조예 13으로, 실시예 14에서 제조한 모바일 어플리케이션 프로세서 칩용 열 계면 물질이 경화되어 제조된 모바일 어플리케이션 프로세서 칩용 열 계면 시트는 제조예 14로, 실시예 15에서 제조한 모바일 어플리케이션 프로세서 칩용 열 계면 물질이 경화되어 제조된 모바일 어플리케이션 프로세서 칩용 열 계면 시트는 제조예 15로, 비교예 1에서 제조한 모바일 어플리케이션 프로세서 칩용 열 계면 물질이 경화되어 제조된 모바일 어플리케이션 프로세서 칩용 열 계면 시트는 비교제조예 1로, 비교예 2에서 제조한 모바일 어플리케이션 프로세서 칩용 열 계면 물질이 경화되어 제조된 모바일 어플리케이션 프로세서 칩용 열 계면 시트는 비교제조예 2로, 비교예 3에서 제조한 모바일 어플리케이션 프로세서 칩용 열 계면 물질이 경화되어 제조된 모바일 어플리케이션 프로세서 칩용 열 계면 시트는 비교제조예 3로, 비교예 4에서 제조한 모바일 어플리케이션 프로세서 칩용 열 계면 물질이 경화되어 제조된 모바일 어플리케이션 프로세서 칩용 열 계면 시트는 비교제조예 4로 표기하였으며, 하기 표 1 내지 표 4에서는 제조예 및 비교제조예에 대한 실험값일지라도, 실시예 및 비교예로 표기하였다.The thermal interface materials for mobile application processor chips manufactured in Examples 1 to 15 and Comparative Examples 1 to 4 were each cured with hot air at a temperature of 80°C for 10 minutes to manufacture a thermal interface sheet for mobile application processor chips having a thickness of 600 μm. At this time, the thermal interface sheet for a mobile application processor chip manufactured by curing the thermal interface material for a mobile application processor chip manufactured in Example 1 is manufactured as Manufacturing Example 1, the thermal interface sheet for a mobile application processor chip manufactured by curing the thermal interface material for a mobile application processor chip manufactured in Example 2 is manufactured as Manufacturing Example 2, the thermal interface sheet for a mobile application processor chip manufactured by curing the thermal interface material for a mobile application processor chip manufactured in Example 3 is manufactured as Manufacturing Example 3, the thermal interface sheet for a mobile application processor chip manufactured by curing the thermal interface material for a mobile application processor chip manufactured in Example 4 is manufactured as Manufacturing Example 4, the thermal interface sheet for a mobile application processor chip manufactured by curing the thermal interface material for a mobile application processor chip manufactured in Example 5 is manufactured as Manufacturing Example 5, the thermal interface sheet for a mobile application processor chip manufactured by curing the thermal interface material for a mobile application processor chip manufactured in Example 6 is manufactured as Manufacturing Example 6, and the mobile application processor manufactured by curing the thermal interface material for a mobile application processor chip manufactured in Example 7 is manufactured as A thermal interface sheet for a chip is manufactured by Manufacturing Example 7, a thermal interface sheet for a mobile application processor chip manufactured by curing the thermal interface material for a mobile application processor chip manufactured in Example 8 is manufactured by Manufacturing Example 8, a thermal interface sheet for a mobile application processor chip manufactured by curing the thermal interface material for a mobile application processor chip manufactured in Example 9 is manufactured by Manufacturing Example 9, a thermal interface sheet for a mobile application processor chip manufactured by curing the thermal interface material for a mobile application processor chip manufactured in Example 10 is manufactured by Manufacturing Example 10, a thermal interface sheet for a mobile application processor chip manufactured by curing the thermal interface material for a mobile application processor chip manufactured in Example 11 is manufactured by Manufacturing Example 11, a thermal interface sheet for a mobile application processor chip manufactured by curing the thermal interface material for a mobile application processor chip manufactured in Example 12 is manufactured by Manufacturing Example 12, a thermal interface sheet for a mobile application processor chip manufactured by curing the thermal interface material for a mobile application processor chip manufactured in Example 13 is manufactured by Manufacturing Example 13, and a mobile application processor chip manufactured in Example 14 is manufactured by The thermal interface sheet for a mobile application processor chip manufactured by curing the thermal interface material for a processor chip is referred to as Manufacturing Example 14, the thermal interface sheet for a mobile application processor chip manufactured by curing the thermal interface material for a mobile application processor chip manufactured in Example 15 is referred to as Manufacturing Example 15, the thermal interface sheet for a mobile application processor chip manufactured by curing the thermal interface material for a mobile application processor chip manufactured in Comparative Example 1 is referred to as Comparative Manufacturing Example 1, the thermal interface sheet for a mobile application processor chip manufactured by curing the thermal interface material for a mobile application processor chip manufactured in Comparative Example 2 is referred to as Comparative Manufacturing Example 2, the thermal interface sheet for a mobile application processor chip manufactured by curing the thermal interface material for a mobile application processor chip manufactured in Comparative Example 3 is referred to as Comparative Manufacturing Example 3, and the thermal interface sheet for a mobile application processor chip manufactured by curing the thermal interface material for a mobile application processor chip manufactured in Comparative Example 4 is referred to as Comparative Manufacturing Example 4, and Tables 1 to 4 below show the manufacturing examples and comparative manufacturing examples. Even if it is an experimental value, it is indicated as an example and comparative example.

실험예 1 : 열저항(Thermal Resistance) 측정 Experimental Example 1: Thermal Resistance Measurement

ASTM D5470 방법으로, 제조예 1 ~ 15 및 비교제조예 1 ~ 4에서 제조한 열 계면 시트의 열저항을 각각 측정하여 하기 표 1 내지 표 4에 나타내었다.The thermal resistance of the thermal interface sheets manufactured in Manufacturing Examples 1 to 15 and Comparative Manufacturing Examples 1 to 4 was measured using the ASTM D5470 method, and the results are shown in Tables 1 to 4 below.

실험예 2 : 압축율 측정 Experimental Example 2: Compression ratio measurement

ASTM D3574 방법으로, 제조예 1 ~ 15 및 비교제조예 1 ~ 4에서 제조한 열 계면 시트의 압축율을 각각 측정하여 하기 표 1 내지 표 4에 나타내었다.The compressibility of the thermal interface sheets manufactured in Manufacturing Examples 1 to 15 and Comparative Manufacturing Examples 1 to 4 was measured using the ASTM D3574 method, and is shown in Tables 1 to 4 below.

실험예 3 : 택키(Tacky)성 및 리워크(rework)성 측정Experimental Example 3: Measurement of Tackiness and Reworkability

베이스 기판 상에 형성된 부자재들로 인해 다양한 단차를 가지는 인쇄 회로 기판을 준비하고, 단차가 형성되어 있는 인쇄 회로 기판 일면에 실시예 1 ~ 15 및 비교예 1 ~ 4에서 제조한 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 각각 도포하고, 80℃의 온도로 10분동안 열풍 경화시켜 600㎛의 두께를 가지는 모바일 어플리케이션 프로세서 칩용 열 계면 시트를 형성하였다. 그 후, 상기 인쇄 회로 기판에 형성된 상기 열 계면 시트를 제거시, 인쇄 회로 기판에 열 계면 시트의 잔류물이 남아있지 않으면 택키성은 A, 인쇄 회로 기판에 열 계면 시트의 잔류물이 조금이라도 남아 있으면 택키성은 B, 열 계면 시트가 찢어지면 택키성은 C로 평가하여 하기 표 1 내지 표 4에 나타내었다. 또한, 리워크성은 인쇄 회로 기판에서 제거된 열 계면 시트의 상태를 확인하여 재사용 가능여부로 판단하였으며, 재사용이 가능한 상태이면 ○, 재사용 불가능한 상태이면 Ⅹ로 판단하여 하기 표 1 내지 표 4에 나타내었다.A printed circuit board having various steps due to the auxiliary materials formed on the base substrate was prepared, and the thermal interface materials for mobile application processor chips manufactured in Examples 1 to 15 and Comparative Examples 1 to 4 were respectively applied to one surface of the printed circuit board having the steps formed, and cured with hot air at a temperature of 80°C for 10 minutes to form a thermal interface sheet for mobile application processor chips having a thickness of 600 μm. Thereafter, when the thermal interface sheet formed on the printed circuit board was removed, if no residue of the thermal interface sheet remained on the printed circuit board, the tackiness was evaluated as A, if even a little residue of the thermal interface sheet remained on the printed circuit board, the tackiness was evaluated as B, and if the thermal interface sheet was torn, the tackiness was evaluated as C, which are shown in Tables 1 to 4 below. In addition, the reworkability was determined by checking the state of the thermal interface sheet removed from the printed circuit board to determine whether it could be reused. If it was reusable, it was evaluated as ○, and if it was not reusable, it was evaluated as X, which are shown in Tables 1 to 4 below.

실험예 4 : 표면조도 측정 Experimental Example 4: Surface Roughness Measurement

ASTM D4417 방법으로, 제조예 1 ~ 15 및 비교제조예 1 ~ 4에서 제조한 열 계면 시트의 표면조도를 측정하여 하기 표 1 내지 표 4에 나타내었다. 이 때, 표면조도의 판단은 열 계면 시트의 표면에 요철이 육안으로 관찰되지 않으면 양호, 열 계면 시트의 표면에 요철이 육안으로 관찰되면 불량으로 판단하였다.The surface roughness of the thermal interface sheets manufactured in Manufacturing Examples 1 to 15 and Comparative Manufacturing Examples 1 to 4 was measured using the ASTM D4417 method, and is shown in Tables 1 to 4 below. At this time, the surface roughness was judged as good if no irregularities were observed with the naked eye on the surface of the thermal interface sheet, and as bad if irregularities were observed with the naked eye on the surface of the thermal interface sheet.

실험예 5 : 기공여부 평가 Experimental Example 5: Evaluation of Porosity

제1유리기판, 각각의 실시예 1 ~ 15 및 비교예 1 ~ 4에서 제조한 모바일 어플리케이션 프로세서 칩용 열 계면 물질 및 제2유리기판을 순차적으로 적층시키고, 80℃의 온도로 10분동안 각각의 실시예 1 ~ 15 및 비교예 1 ~ 4에서 제조한 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 경화시켰다. 경화된 각각의 실시예 1 ~ 15 및 비교예 1 ~ 4에서 제조한 모바일 어플리케이션 프로세서 칩용 열 계면 물질의 표면에 기공이 형성되었는지 육안으로 판별하여 그 결과를 하기 표 1 내지 표 4에 나타내었다.A first glass substrate, thermal interface materials for mobile application processor chips manufactured in each of Examples 1 to 15 and Comparative Examples 1 to 4, and a second glass substrate were sequentially laminated, and the thermal interface materials for mobile application processor chips manufactured in each of Examples 1 to 15 and Comparative Examples 1 to 4 were cured at a temperature of 80°C for 10 minutes. Whether pores were formed on the surface of the cured thermal interface materials for mobile application processor chips manufactured in each of Examples 1 to 15 and Comparative Examples 1 to 4 was visually determined, and the results are shown in Tables 1 to 4 below.

표 1에서 확인할 수 있듯이, 실시예 1에서 제조한 열 계면 물질을 이용하여 제조된 열 계면 시트는 리워크성이 우수할 뿐만 아니라, 열저항이 낮고, 압축율이 일정 수준이상 높은 값을 가지는 것을 확인할 수 있었다.As can be seen in Table 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 1 not only had excellent reworkability, but also had low thermal resistance and a compression ratio that was above a certain level.

하지만, 실시예 1과 비교하여, 실시예 2에서 제조한 열 계면 물질을 이용하여 제조된 열 계면 시트는 열저항이 상승할 뿐만 아니라, 압축율은 저하되는 것을 확인할 수 있었다.However, compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 2 not only had an increased thermal resistance but also a decreased compressibility.

또한, 실시예 1과 비교하여, 실시예 3에서 제조한 열 계면 물질을 이용하여 제조된 열 계면 시트는 열저항이 상승할 뿐만 아니라, 압축율은 저하되고, 택키성 및 리워크성이 나빠지는 것을 확인할 수 있었다.In addition, compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 3 not only had an increased thermal resistance, but also had a decreased compressibility and worsened tackiness and reworkability.

또한, 실시예 1과 비교하여, 실시예 4에서 제조한 열 계면 물질을 이용하여 제조된 열 계면 시트는 열저항이 상승할 뿐만 아니라, 압축율은 저하되고, 택키성이 나빠질 뿐만 아니라, 표면조도가 불량임을 확인할 수 있었다.In addition, compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 4 not only had an increased thermal resistance, but also a decreased compressibility, a worse tackiness, and poor surface roughness.

또한, 실시예 1과 비교하여, 실시예 5에서 제조한 열 계면 물질을 이용하여 제조된 열 계면 시트는 열저항이 상승할 뿐만 아니라, 압축율은 저하되는 것을 확인할 수 있었다.In addition, compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 5 not only had an increased thermal resistance but also a decreased compressibility.

또한, 실시예 1과 비교하여, 실시예 6에서 제조한 열 계면 물질을 이용하여 제조된 열 계면 시트는 열저항이 상승할 뿐만 아니라, 압축율은 저하되고, 표면조도가 불량임을 확인할 수 있었다.In addition, compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 6 not only had increased thermal resistance, but also had decreased compressibility and poor surface roughness.

또한, 실시예 1과 비교하여, 비교예 1에서 제조한 열 계면 물질을 이용하여 제조된 열 계면 시트는 열저항이 상승할 뿐만 아니라, 압축율은 저하되고, 표면조도가 불량임을 확인할 수 있었다.In addition, compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Comparative Example 1 not only had an increased thermal resistance, but also a decreased compressibility and poor surface roughness.

또한, 실시예 1과 비교하여, 비교예 2에서 제조한 열 계면 물질을 이용하여 제조된 열 계면 시트는 열저항이 상승할 뿐만 아니라, 압축율은 저하되고, 리워크성이 나빠지며, 표면조도가 불량임을 확인할 수 있었다.In addition, compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Comparative Example 2 not only had increased thermal resistance, but also had decreased compressibility, poor reworkability, and poor surface roughness.

또한, 실시예 1과 비교하여, 비교예 3에서 제조한 열 계면 물질을 이용하여 제조된 열 계면 시트는 열저항이 상승할 뿐만 아니라, 압축율은 저하되고, 택키성 및 리워크성이 나빠지는 것을 확인할 수 있었다.In addition, compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Comparative Example 3 not only had an increased thermal resistance, but also had a decreased compressibility and worsened tackiness and reworkability.

또한, 실시예 1과 비교하여, 비교예 4에서 제조한 열 계면 물질을 이용하여 제조된 열 계면 시트는 열저항이 상승할 뿐만 아니라, 압축율은 저하되는 것을 확인할 수 있었다.In addition, compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Comparative Example 4 not only had an increased thermal resistance but also a decreased compressibility.

표 2에서 확인할 수 있듯이, 실시예 1에서 제조한 열 계면 물질을 이용하여 제조된 열 계면 시트는 리워크성이 우수할 뿐만 아니라, 열저항이 낮고, 압축율이 일정 수준이상 높은 값을 가지는 것을 확인할 수 있었다.As can be seen in Table 2, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 1 not only had excellent reworkability, but also had low thermal resistance and a compression ratio that was high above a certain level.

하지만, 실시예 1과 비교하여, 실시예 7에서 제조한 열 계면 물질을 이용하여 제조된 열 계면 시트는 열저항이 상승할 뿐만 아니라, 표면조도가 불량임을 확인할 수 있었다.However, compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 7 not only had increased thermal resistance but also had poor surface roughness.

또한, 실시예 1과 비교하여, 실시예 8에서 제조한 열 계면 물질을 이용하여 제조된 열 계면 시트는 열저항이 상승하는 것을 확인할 수 있었다.In addition, compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 8 had an increased thermal resistance.

표 3에서 확인할 수 있듯이, 실시예 1에서 제조한 열 계면 물질을 이용하여 제조된 열 계면 시트는 리워크성이 우수할 뿐만 아니라, 열저항이 낮고, 압축율이 일정 수준이상 높은 값을 가지는 것을 확인할 수 있었다.하지만, 실시예 1과 비교하여, 실시예 9에서 제조한 열 계면 물질을 이용하여 제조된 열 계면 시트는 열저항이 현저히 상승하는 것을 확인할 수 있었다.As can be seen in Table 3, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 1 not only had excellent reworkability, but also had low thermal resistance and a compressibility that was high above a certain level. However, compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 9 had a significantly increased thermal resistance.

또한, 실시예 1과 비교하여, 실시예 10에서 제조한 열 계면 물질을 이용하여 제조된 열 계면 시트는 압축율이 저하될 뿐만 아니라, 택키성 및 리워크성이 나빠지고, 표면조도가 불량하며, 기공이 형성되는 것을 확인할 수 있었다.In addition, compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 10 not only had a lower compressibility, but also had poor tackiness and reworkability, poor surface roughness, and formed pores.

또한, 실시예 1과 비교하여, 실시예 11에서 제조한 열 계면 물질을 이용하여 제조된 열 계면 시트는 열저항이 현저히 상승할 뿐만 아니라, 리워크성이 나빠지고, 기공이 형성되는 것을 확인할 수 있었다.In addition, compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 11 not only had a significantly increased thermal resistance, but also had poor reworkability and formed pores.

또한, 실시예 1과 비교하여, 실시예 12에서 제조한 열 계면 물질을 이용하여 제조된 열 계면 시트는 압축율이 현저히 저하될 뿐만 아니라, 택키성 및 리워크성이 나빠지고, 표면조도가 불량하며, 기공이 형성되는 것을 확인할 수 있었다.In addition, compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 12 not only had a significantly lower compressibility, but also had poor tackiness and reworkability, poor surface roughness, and formed pores.

표 4에서 확인할 수 있듯이, 실시예 1에서 제조한 열 계면 물질을 이용하여 제조된 열 계면 시트는 리워크성이 우수할 뿐만 아니라, 열저항이 낮고, 압축율이 일정 수준이상 높은 값을 가지는 것을 확인할 수 있었다.As can be seen in Table 4, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 1 not only had excellent reworkability, but also had low thermal resistance and a compression ratio that was high above a certain level.

하지만, 실시예 1과 비교하여, 실시예 13에서 제조한 열 계면 물질을 이용하여 제조된 열 계면 시트는 열저항이 상승할 뿐만 아니라, 압축율은 저하되고, 택키성이 나빠지는 것을 확인할 수 있었다.However, compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 13 not only had an increased thermal resistance, but also a decreased compressibility and a worse tackiness.

또한, 실시예 1과 비교하여, 실시예 14에서 제조한 열 계면 물질을 이용하여 제조된 열 계면 시트는 열저항이 상승할 뿐만 아니라, 압축율은 저하되고, 리워크성이 나빠지는 것을 확인할 수 있었다.In addition, compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 14 not only had an increased thermal resistance, but also a decreased compressibility and a worse reworkability.

또한, 실시예 1과 비교하여, 실시예 15에서 제조한 열 계면 물질을 이용하여 제조된 열 계면 시트는 열저항이 상승할 뿐만 아니라, 압축율은 저하되고, 택키성 및 리워크성이 나빠지며, 기공이 형성되는 것을 확인할 수 있었다.In addition, compared to Example 1, it was confirmed that the thermal interface sheet manufactured using the thermal interface material manufactured in Example 15 not only had an increased thermal resistance, but also had a decreased compressibility, deteriorated tackiness and reworkability, and formed pores.

본 발명의 단순한 변형이나 변경은 이 분야의 통상의 지식을 가진 자에 의해서 용이하게 실시될 수 있으며, 이러한 변형이나 변경은 모두 본 발명의 영역에 포함되는 것으로 볼 수 있다.Simple modifications or changes of the present invention can be easily implemented by a person having ordinary skill in the art, and all such modifications or changes can be considered to be included in the scope of the present invention.

Claims (10)

베이스 물질; 을 포함하고,base material; including, 상기 베이스 물질은 필러(filler) 및 바인더 수지를 포함하며,The above base material includes a filler and a binder resin, 상기 필러는 제1필러, 제2필러 및 제3필러를 포함하고, 하기 조건 (1)을 만족하는 것을 특징으로 하는 모바일 어플리케이션 프로세서 칩용 열 계면 물질.A thermal interface material for a mobile application processor chip, characterized in that the filler comprises a first filler, a second filler, and a third filler, and satisfies the following condition (1). (1) A > B > C(1) A > B > C 상기 조건 (1)에 있어서, A는 제1필러의 평균입경을 나타내고, B는 제2필러의 평균입경을 나타내며, C는 제3필러의 평균입경을 나타낸다.In the above condition (1), A represents the average particle diameter of the first filler, B represents the average particle diameter of the second filler, and C represents the average particle diameter of the third filler. 제1항에 있어서,In the first paragraph, 상기 필러는 산화알루미늄(Al2O3), 산화아연(ZnO), 질화붕소(BN), 질화알루미늄(AlN) 및 산화마그네슘(MgO) 중에서 선택된 1종 이상을 포함하는 것을 특징으로 하는 모바일 어플리케이션 프로세서 칩용 열 계면 물질.A thermal interface material for a mobile application processor chip, characterized in that the filler comprises at least one selected from aluminum oxide (Al 2 O 3 ), zinc oxide (ZnO), boron nitride (BN), aluminum nitride (AlN), and magnesium oxide (MgO). 제1항에 있어서,In the first paragraph, 상기 제1필러는 평균입경이 90 ~ 150㎛이고, The above first filler has an average particle diameter of 90 to 150㎛, 상기 제2필러는 평균입경이 11 ~ 45㎛이며, The above second filler has an average particle diameter of 11 to 45㎛, 상기 제3필러는 평균입경이 0.5 ~ 10㎛인 것을 특징으로 하는 모바일 어플리케이션 프로세서 칩용 열 계면 물질.A thermal interface material for a mobile application processor chip, characterized in that the third filler has an average particle diameter of 0.5 to 10㎛. 제1항에 있어서,In the first paragraph, 상기 필러는 하기 조건 (2)를 더 만족하는 것을 특징으로 하는 모바일 어플리케이션 프로세서 칩용 열 계면 물질.A thermal interface material for a mobile application processor chip, characterized in that the above filler further satisfies the following condition (2). (2) D > E + F(2) D > E + F 상기 조건 (2)에 있어서, D는 본 발명의 필러에 포함된 제1필러의 중량%을 나타내고, E는 본 발명의 필러에 포함된 제2필러의 중량%을 나타내며, F는 본 발명의 필러에 포함된 제3필러의 중량%를 나타낸다. In the above condition (2), D represents the weight % of the first filler included in the filler of the present invention, E represents the weight % of the second filler included in the filler of the present invention, and F represents the weight % of the third filler included in the filler of the present invention. 제4항에 있어서,In paragraph 4, 상기 필러는 하기 조건 (3)을 만족하는 것을 특징으로 하는 모바일 어플리케이션 프로세서 칩용 열 계면 물질.A thermal interface material for a mobile application processor chip, characterized in that the above filler satisfies the following condition (3). (3) 2.2 ≤ ≤ 4.2(3) 2.2 ≤ ≤ 4.2 상기 조건 (3)에 있어서, D는 본 발명의 필러에 포함된 제1필러의 중량%을 나타내고, E는 본 발명의 필러에 포함된 제2필러의 중량%을 나타내며, F는 본 발명의 필러에 포함된 제3필러의 중량%을 나타낸다.In the above condition (3), D represents the weight % of the first filler included in the filler of the present invention, E represents the weight % of the second filler included in the filler of the present invention, and F represents the weight % of the third filler included in the filler of the present invention. 제1항에 있어서,In the first paragraph, 상기 필러는 전체 중량%에 대하여, 제1필러 46.9 ~ 87.1 중량%, 제2필러 16.8 ~ 31.2 중량% 및 제3필러 6.3 ~ 11.7 중량%로 포함하는 것을 특징으로 하는 모바일 어플리케이션 프로세서 칩용 열 계면 물질.A thermal interface material for a mobile application processor chip, characterized in that the filler comprises 46.9 to 87.1 wt% of the first filler, 16.8 to 31.2 wt% of the second filler, and 6.3 to 11.7 wt% of the third filler, based on the total weight%. 제1항에 있어서,In the first paragraph, 상기 열 계면 물질은 기능성 첨가제를 더 포함하는 것을 특징으로 하는 모바일 어플리케이션 프로세서 칩용 열 계면 물질.A thermal interface material for a mobile application processor chip, characterized in that the thermal interface material further comprises a functional additive. 제7항에 있어서,In paragraph 7, 상기 열 계면 물질은 베이스 물질 100 중량부에 대하여, 첨가제 0.1 ~ 10 중량부를 포함하는 것을 특징으로 하는 모바일 어플리케이션 프로세서 칩용 열 계면 물질.A thermal interface material for a mobile application processor chip, characterized in that the thermal interface material comprises 0.1 to 10 parts by weight of an additive per 100 parts by weight of a base material. 제1항의 모바일 어플리케이션 프로세서 칩용 열 계면 물질을 포함하는 모바일 어플리케이션 프로세서 칩용 열 계면 시트.A thermal interface sheet for a mobile application processor chip comprising a thermal interface material for a mobile application processor chip of claim 1. 제9항에 있어서,In paragraph 9, 상기 열 계면 시트는 200 ~ 800㎛의 두께를 가지는 것을 특징으로 하는 모바일 어플리케이션 프로세서 칩용 열 계면 시트.A thermal interface sheet for a mobile application processor chip, characterized in that the thermal interface sheet has a thickness of 200 to 800 μm.
PCT/KR2024/021557 2024-02-29 2024-12-31 Thermal interface material for mobile application processor chip, and thermal interface sheet comprising same Pending WO2025183329A1 (en)

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KR10-2024-0029609 2024-02-29
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KR1020240029606A KR102752509B1 (en) 2024-02-29 2024-02-29 thermal interface material for mobile application processor chip and thermal interface seat containing the same
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JP2013053211A (en) * 2011-09-02 2013-03-21 Mitsubishi Chemicals Corp Thermoplastic elastomer composition
KR20160070661A (en) * 2014-12-10 2016-06-20 현대자동차주식회사 The thermal interface material and production method thereof
KR101759129B1 (en) * 2010-03-29 2017-07-18 아론카세이 가부시키가이샤 Heat-conductive elastomer composition
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KR101759129B1 (en) * 2010-03-29 2017-07-18 아론카세이 가부시키가이샤 Heat-conductive elastomer composition
JP2013053211A (en) * 2011-09-02 2013-03-21 Mitsubishi Chemicals Corp Thermoplastic elastomer composition
KR20220043233A (en) * 2014-12-05 2022-04-05 허니웰 인터내셔널 인코포레이티드 High performance thermal interface materials with low thermal impedance
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