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WO2025170076A1 - Three-dimensional molded insulator and method for manufacturing three-dimensional molded insulator - Google Patents

Three-dimensional molded insulator and method for manufacturing three-dimensional molded insulator

Info

Publication number
WO2025170076A1
WO2025170076A1 PCT/JP2025/004252 JP2025004252W WO2025170076A1 WO 2025170076 A1 WO2025170076 A1 WO 2025170076A1 JP 2025004252 W JP2025004252 W JP 2025004252W WO 2025170076 A1 WO2025170076 A1 WO 2025170076A1
Authority
WO
WIPO (PCT)
Prior art keywords
molded insulator
dimensionally
resin
insulator
dimensional molded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2025/004252
Other languages
French (fr)
Japanese (ja)
Inventor
裕 大矢
克彰 高橋
良博 庄司
大樹 草野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Publication of WO2025170076A1 publication Critical patent/WO2025170076A1/en
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M50/00Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
    • H01M50/50Current conducting connections for cells or batteries
    • H01M50/572Means for preventing undesired use or discharge
    • H01M50/584Means for preventing undesired use or discharge for preventing incorrect connections inside or outside the batteries
    • H01M50/588Means for preventing undesired use or discharge for preventing incorrect connections inside or outside the batteries outside the batteries, e.g. incorrect connections of terminals or busbars
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M50/00Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
    • H01M50/50Current conducting connections for cells or batteries
    • H01M50/572Means for preventing undesired use or discharge
    • H01M50/584Means for preventing undesired use or discharge for preventing incorrect connections inside or outside the batteries
    • H01M50/59Means for preventing undesired use or discharge for preventing incorrect connections inside or outside the batteries characterised by the protection means
    • H01M50/591Covers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K5/00Casings, cabinets or drawers for electric apparatus
    • H05K5/02Details
    • H05K5/03Covers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00Constructional details common to different types of electric apparatus
    • H05K7/02Arrangements of circuit components or wiring on supporting structure
    • H05K7/06Arrangements of circuit components or wiring on supporting structure on insulating boards, e.g. wiring harnesses

Definitions

  • a three-dimensionally shaped insulator that is placed over a component to which voltage is applied, The container is molded into a shape having a recess including a bottom and a wall portion provided at an end of the bottom, A three-dimensionally molded insulator characterized in that the component is inserted into the recess when used.
  • CTI comparative tracking index
  • thermoforming is vacuum forming or vacuum-pressure forming.
  • a three-dimensionally molded insulator can be obtained that can reduce the dead space that occurs around voltage application components and enable effective use of the space in which the voltage application components are housed. Furthermore, according to the present invention, it is possible to manufacture a three-dimensionally molded insulator with high shape accuracy.
  • FIG. 7 is a cross-sectional view showing a three-dimensionally shaped insulator according to a modified example.
  • FIG. 8 is a cross-sectional view showing a control device in which the three-dimensionally molded insulator and the circuit board according to the embodiment are housed in a case.
  • FIG. 9 is a cross-sectional view showing a modification of the control device of FIG.
  • the base end side of the arrow is referred to as the negative side of each axis
  • the tip end side is referred to as the positive side of each axis.
  • the positive side of the Z-axis is referred to as "upper,” and the negative side of the Z-axis is referred to as "lower.”
  • the three-dimensional molded insulator 1 is used, for example, by covering a circuit board 9.
  • the circuit board 9 includes a wiring board 90 having wiring (not shown), a power semiconductor element 91, a bus bar 92, a signal connector 93, and a fixing screw 94.
  • the power semiconductor element 91, the bus bar 92, the signal connector 93, and the fixing screw 94 each protrude upward from the top surface of the wiring board 90.
  • the power semiconductor element 91 and the bus bar 92 are used under a relatively high voltage.
  • the applied voltage is, for example, 50 V or more, and preferably 71 V or more and 10 kV or less.
  • the three-dimensionally molded insulator 1 is three-dimensionally molded into a shape having a recess 12, more specifically, a shape having a flat portion 11 and a recess 12.
  • Three-dimensional molding refers to molding a sheet-like member into a shape having a recess that is deeper than the thickness of the member.
  • the insulating sheet 1 has an outer size and shape that overlaps with the wiring board 90.
  • the flat portion 11 is a portion having a flat surface 110 that is parallel to the upper surface of the wiring board 90.
  • the flat surface 110 is the lower surface of the flat portion 11 that faces the upper surface of the wiring board 90.
  • the power semiconductor element 91, bus bar 92, and signal connector 93 are inserted into the recess 12. This allows the top and side surfaces of these components that protrude from the top surface of the wiring board 90 to be covered with the three-dimensional molded insulator 1. As a result, only a minimal gap is created between the circuit board 9 and the three-dimensional molded insulator 1, reducing dead space compared to conventional methods. In other words, the dead space around components to which voltage is applied, such as the power semiconductor element 91, bus bar 92, and signal connector 93, can be reduced. This makes it possible to effectively utilize the space that houses the circuit board 9.
  • the orientation of the three-dimensionally molded insulator 1 when in use is not limited to the above.
  • the orientation of the three-dimensionally molded insulator 1 when in use is not limited to the above.
  • the above-mentioned wiring board 90 faces downward, the three-dimensionally molded insulator 1 will be placed over the wiring board 90 from below.
  • the above-mentioned recess 12 will be a portion that is recessed downward from the flat surface 110.
  • circuit board 9 Prior to describing the three-dimensionally shaped insulator 1, a detailed description will be given of the circuit board 9.
  • the circuit board 9 is not particularly limited as long as it has a configuration including a substrate and components that protrude from the surface of the substrate and to which a voltage is applied.
  • the circuit board 9 shown in FIG. 1 includes the wiring board 90, the power semiconductor element 91, the bus bar 92, the signal connector 93, and the fixing screw 94.
  • FIG. 2 is a cross-sectional view of the circuit board 9 shown in FIG. 1 taken along line AA.
  • the bus bar 92 is a conductor that connects the circuit board 9 and the power supply.
  • the bus bar 92 is made of, for example, a metal plate or rod.
  • the bus bar 92 shown in FIG. 2 protrudes upward from the top surface of the wiring board 90 and is bent sideways (towards the negative X-axis) midway.
  • the bus bar 92 is electrically connected to the wiring board 90 via through-wires 903.
  • the bus bar 92 shown in FIG. 1 includes bus bars 921 and 922, which have currents flowing in opposite directions.
  • the signal connector 93 is a connector into which a signal line is inserted.
  • the signal line is used, for example, to send and receive signals between the circuit board 9 and an external control device.
  • the signal connector 93 protrudes upward from the top surface of the wiring board 90.
  • the fixing screws 94 penetrate the four corners of the wiring board 90 in the thickness direction.
  • the fixing screws 94 secure the wiring board 90 to a housing or the like (not shown).
  • the heads of the fixing screws 94 protrude upward from the top surface of the wiring board 90.
  • components to which voltage is applied are not limited to those listed above, and may be any component to which voltage is applied. Specific examples other than those listed above include batteries, capacitors, diodes, coils, resistors, relays, transformers, switches, connectors, terminals, etc.
  • components that are in contact with a component to which the voltage is directly applied may also be subject to the unintentional application of voltage, and are therefore considered to be included in the "components to which voltage is applied.”
  • components include heat sinks, heat spreaders, and heat pipes.
  • the three-dimensionally molded insulator 1 shown in Fig. 1 has a plurality of recesses 12 that correspond to components protruding from the upper surface of the wiring board 90.
  • the recesses 12 are open downward.
  • the three-dimensionally molded insulator 1 is used with each component inserted through the openings.
  • Such recess 12 includes recess 121 into which power semiconductor element 91 is inserted, recess 122 into which bus bar 92 is inserted, and recess 123 into which signal connector 93 is inserted.
  • Recesses 121, 122, and 123 are each molded to match the external size and shape of the inserted component. This minimizes the gap between each component and recess 121, 122, and 123, thereby reducing dead space. In other words, because the area of recesses 121, 122, and 123 in plan view can be minimized, the area of flat portion 11 can be maximized accordingly. This allows for more effective use of the space above flat portion 11 (the space around the component to which voltage is applied) than when using a conventional flat insulating sheet.
  • the recesses 12 cover not only the top surfaces of each component but also the side surfaces. This prevents dust and other foreign matter from adhering to the side surfaces of each component, and prevents moisture and other substances from being adsorbed.
  • terminals and the like may be exposed on the side of each component.
  • the recess 12 also effectively insulates such terminals.
  • the provision of the recess 12 makes it possible to shorten the spatial distance L1 required for insulation between the bus bar 92 and the power semiconductor element 91 shown in Figure 2 (the spatial distance required for insulation between components). This makes it possible to reduce the size of the circuit board 9.
  • FIG. 3 is a cross-sectional view showing only the three-dimensionally shaped insulator 1 of FIG.
  • the recess 12 shown in Fig. 3 includes a bottom 12a and wall portions 12b.
  • the bottom 12a is a portion that covers the upper surfaces of the power semiconductor elements 91 and the bus bars 92.
  • the wall portions 12b are portions that rise down from the end of the bottom 12a and cover the side surfaces of the power semiconductor elements 91 and the bus bars 92.
  • the shapes of the bottom 12a and the wall portions 12 are not limited to the shapes shown in Fig. 3.
  • the connection portion between the bottom 12a and the wall portions 12b may be rounded or chamfered.
  • the separation distance S2 between the inner surface of the recess 12 and components such as the power semiconductor element 91, as shown in Figure 2 can be made sufficiently close. This makes it possible to more effectively reduce dead space and effectively protect the side surfaces of each component.
  • the separation distance S2 is not particularly limited, but is preferably 10 mm or less, more preferably 7 mm or less, and even more preferably 5 mm or less. This allows dead space to be sufficiently reduced and each component to be protected more effectively. As will be described later, the three-dimensional molded insulator 1 has good tracking resistance. Therefore, even if the separation distance S2 is within the above range, tracking is unlikely to occur. On the other hand, when taking into consideration the efficiency of heat dissipation from the components, stress on the components, ease of assembly, etc., the separation distance S2 is preferably 0.5 mm or more, and more preferably 1 mm or more.
  • the distance between the ceiling surface of the recess 12 and components such as the power semiconductor element 91 is the same as the above-mentioned distance S2.
  • the separation distance S1 between the flat surface 110 of the flat portion 11 and the wiring board 90, as shown in Figure 2 can be made sufficiently close. Furthermore, by reducing the separation distance S1, it becomes easier to prevent foreign matter such as dust from adhering to the upper surface of the wiring board 90, and moisture from being adsorbed. This also makes it easier to prevent creeping discharge and subsequent tracking that occurs between the bus bar 92 and the power semiconductor element 91.
  • the separation distance S1 is not particularly limited, but is preferably 15 mm or less, more preferably 10 mm or less, and even more preferably 5 mm or less. This allows the dead space to be sufficiently reduced. Furthermore, in the example shown in Figure 2, by keeping the separation distance S1 within the above range, the probability of the three-dimensional molded insulator 1 being interposed between the power semiconductor element 91 and the bus bar 921 increases, and the three-dimensional molded insulator 1 can be brought sufficiently close to the wiring board 90 between them. This makes it possible to suppress creeping discharge and tracking that occur between them, and to sufficiently shorten the spatial distance L1 required between them.
  • the recess 12 includes recesses 121 into which the power semiconductor elements 91 are inserted one by one. This allows each power semiconductor element 91 to be protected individually. It also reduces the distance required for insulation between the power semiconductor elements 91. Note that the recess 121 may be configured to accommodate the insertion of two or more power semiconductor elements 91 (components).
  • the recess 12 includes recesses 122 into which the bus bars 921, 922 are inserted one by one. This allows the bus bars 921, 922 to be protected individually. It also reduces the distance required for insulation between the bus bars 921, 922. Note that the recess 122 may be configured to accommodate the insertion of two or more bus bars 92 (components).
  • bus bars 921 and 922 are aligned along the Y axis.
  • the bus bars 921 and 922 may be configured to partially overlap along the Z axis.
  • FIG. 4 is a cross-sectional view showing a modification of the circuit board 9 of FIG.
  • bus bar 921 and bus bar 922 partially overlap along the Z axis. In this portion, positive and negative currents flow closely together. As a result, magnetic fluxes generated by the currents cancel each other out, reducing the inductance component. Therefore, the configuration shown in FIG. 4 can achieve a circuit board 9 with a reduced inductance component in bus bar 92. This can reduce surge voltages on circuit board 9.
  • busbar 921 and busbar 922 are interposed between busbar 921 and busbar 922. This prevents dielectric breakdown and other problems even when busbars 921 and 922 are placed sufficiently close to each other. As a result, the inductance component can be reduced more effectively.
  • bus bar 921 on the positive side of the X axis and the side surfaces on the positive and negative sides of the Y axis are covered by the inner surface of recess 122. Therefore, even if bus bars 921 and 922 are brought sufficiently close to each other, creeping discharge can be effectively suppressed.
  • Figure 5 is a top view showing a three-dimensionally molded insulator 1 according to a modified embodiment.
  • Figure 6 is a cross-sectional view of the busbar 92 and three-dimensionally molded insulator 1 shown in Figure 5.
  • the three-dimensionally molded insulator 1 shown in Figure 5 is a modified example of the three-dimensionally molded insulator 1 shown in Figure 3, and is provided, for example, at a position away from the circuit board 9.
  • the bus bars 921, 922 shown in Figure 4 may protrude from the wiring board 90 and extend toward the negative X-axis side.
  • the three-dimensionally molded insulator 1 shown in Figure 5 is preferably used in the extended portions of the bus bars 921, 922.
  • the bus bars 921 and 922 shown in Figure 5 correspond to the extensions described above. In the extensions, the bus bars 921 and 922 overlap each other along the Z axis. In the overlapping portion, the bottom 12a of the three-dimensionally shaped insulator 1 is positioned between the bus bars 921 and 922. In addition, the wall 12b of the three-dimensionally shaped insulator 1 shown in Figure 5 rises from the end of the bottom 12a toward the positive side of the Z axis, as shown in Figure 6. As a result, the side surface of the bus bar 922 is covered by the wall 12b.
  • the three-dimensionally molded insulator 1 shown in Figures 5 and 6 can reduce the dead space around the bus bar 922.
  • the wall portion 12b by providing the wall portion 12b, the insulating spatial distance on the sides of the bus bar 922 can be reduced, making it possible to place any component on the side of the bus bar 922. This makes it possible to reduce the space that would previously have been dead space.
  • the three-dimensionally molded insulator 1 shown in Figure 5 is used with the bus bar 922 inserted into the recess 12, misalignment between the bus bar 922 and the three-dimensionally molded insulator 1 is suppressed. Therefore, even if vibrations or the like are applied, the three-dimensionally molded insulator 1 can be prevented from falling off or the like.
  • the three-dimensionally molded insulator 1 shown in Figure 1 also has a through hole 13 that penetrates the flat portion 11 in the thickness direction.
  • the through hole 13 is provided to match the position of the fixing screw 94.
  • the fixing screw 94 can be rotated even when the three-dimensionally molded insulator 1 is placed over the circuit board 9. This makes it possible to screw the circuit board 9 to a case or the like with the three-dimensionally molded insulator 1 placed over the circuit board 9, improving assembly workability.
  • it is preferable that the inner diameter of the through hole 13 is equal to or greater than the outer diameter of the head of the fixing screw 94. This makes it easier to rotate the fixing screw 94.
  • the head of the fixing screw 94 may be positioned above the three-dimensionally shaped insulator 1. This allows the fixing screw 94 to fix the three-dimensionally shaped insulator 1 together with the circuit board 9. In this case, it is preferable that the inner diameter of the through hole 13 is smaller than the outer diameter of the head of the fixing screw 94.
  • planar shape of the through hole 13 is not limited to a closed shape, but may also be a shape with a portion open outward.
  • the thickness t11 of the flat portion 11 of the three-dimensionally molded insulator 1 is not particularly limited, but is preferably 0.05 mm or more and 1.00 mm or less, more preferably 0.10 mm or more and 0.90 mm or less, and even more preferably 0.20 mm or more and 0.80 mm or less. This results in a three-dimensionally molded insulator 1 that is excellent in flame retardancy, tracking resistance, and insulation, and is relatively easy to manufacture. Note that if the thickness t11 of the flat portion 11 is below the lower limit, there is a risk of reduced flame retardancy, tracking resistance, and insulation.
  • the thickness t11 of the flat portion 11 may exceed the upper limit, but in that case, the three-dimensionally molded insulator 1 may be too thick, reducing flexibility and making handling difficult, reducing heat dissipation and shape accuracy, and increasing the difficulty of manufacturing.
  • the thickness t12b of the wall portion 12b is preferably 20% to 95% of the thickness t11 of the flat portion 11, more preferably 30% to 90%, and even more preferably 50% to 90%. If the thickness t12b of the wall portion 12b is within this range, it will have sufficient rigidity to support the shape of the recess 12 and will further reduce the dead space on the sides of the recess 12.
  • the thickness t12b of the wall portion 12b is below the lower limit, the rigidity of the wall portion 12b may be insufficient. On the other hand, if the thickness t12b of the wall portion 12b exceeds the upper limit, the effect of reducing the dead space on the sides of the recess 12 may be reduced.
  • the external shape of the three-dimensional molded insulator 1 shown in Figure 1 is, as an example, a shape that overlaps the entire circuit board 9, but it may be smaller or larger than this.
  • the recess 12, like recess 121 cover the entire side surface of the component protruding from the top surface of the wiring board 90, but it may also cover only part of the side surface of the component, like recesses 122 and 123, for example.
  • the depth of the recess 12 is set according to the height of the component, so is not particularly limited, but may be between 0.5 mm and 100 mm, or between 1 mm and 50 mm. Within these ranges, a three-dimensional molded insulator 1 can be realized that is easy to manufacture and has recesses 12 into which various components can be inserted with almost no height restrictions.
  • the three-dimensionally molded insulator 1 contains, for example, a resin material.
  • the proportion of resin material in the constituent materials of the three-dimensionally molded insulator 1 is preferably 60% by mass or more, more preferably 70% by mass or more, and even more preferably 80% by mass or more. This results in a three-dimensionally molded insulator 1 that has excellent insulating properties and formability, and is easily lightweight.
  • resin materials include various thermoplastic resins such as polyolefin resin, polyamide resin, polyester resin, aromatic polycarbonate resin, aliphatic polycarbonate resin, polyarylate resin, polyethylene terephthalate resin, polybutylene terephthalate resin, polylactic acid, styrene copolymer, polyacetal resin, polyphenylene ether resin, polyphenylene sulfide resin, polymethyl methacrylate resin, and cellulose ester resin, as well as various thermosetting resins such as polyimide, polyurethane, epoxy resin, and phenolic resin.
  • the first resin and the second resin may be a combination of one or more of these resins.
  • the three-dimensionally molded insulator 1 be primarily made of thermoplastic resin.
  • "Main material” refers to the above-mentioned proportions. Sheets primarily made of thermoplastic resin are capable of plastic deformation due to heat, and have excellent secondary processability. For this reason, a three-dimensionally molded insulator 1 can be produced by thermoforming, resulting in a product that is easy to manufacture.
  • polyolefin resins polyamide resins, aromatic polycarbonate resins, and aliphatic polycarbonate resins are preferably used as thermoplastic resins.
  • Tracking resistance refers to resistance to the phenomenon in which a conductive path (tracking) is formed due to discharge that occurs on the surface of an insulator.
  • Such tracking resistance can be quantified, for example, by the comparative tracking index (CTI), which is an indicator of tracking resistance measured in accordance with ASTM D3638.
  • CTI comparative tracking index
  • the comparative tracking index CTI of the resin material is preferably 400 V or higher, and more preferably 600 V or higher. This results in a three-dimensional molded insulator 1 with particularly good tracking resistance.
  • the glass transition temperature Tg of the resin material is preferably 125°C or higher, and more preferably 130°C or higher but lower than 200°C. This gives the resin material heat resistance, making it easier to suppress discoloration due to carbonization, even if creeping discharge occurs in the three-dimensional molded insulator 1. As a result, the occurrence of poor appearance in the three-dimensional molded insulator 1 and the deterioration of insulation properties due to carbonization can be suppressed.
  • the glass transition temperature Tg of the resin material is measured using a differential scanning calorimeter (DSC) method. The heating rate in the DSC method is 10°C/min.
  • the melt volume rate (MVR) of the resin material at 300°C and a load of 1.2 kg is preferably 5 cm 3 /10 min or more and 30 cm 3 /10 min or less, and more preferably 8 cm 3 /10 min or more and 20 cm 3 /10 min or less. This improves the moldability of the three-dimensionally molded insulator 1 during secondary processing, particularly the ability to prevent defects such as distortion during vacuum molding. If the melt volume rate is below the lower limit, the fluidity may be insufficient and moldability may be reduced. On the other hand, if the melt volume rate is above the upper limit, the impact resistance of the molded body may be reduced. The melt volume rate is measured in accordance with the test method specified in JIS K 7210:2014.
  • polyolefin resins examples include high-density polyethylene resin, polypropylene resin, polybutene resin, ethylene-(meth)acrylic acid copolymer, ethylene-methyl (meth)acrylate copolymer, ethylene-ethyl (meth)acrylate copolymer, ethylene-vinyl acetate copolymer, maleic anhydride-modified polyethylene, carboxylic acid-modified polyethylene, ethylene-propylene copolymer, and ethylene-propylene-diene copolymer.
  • Polyolefin resins have excellent chemical resistance to a variety of chemicals. Furthermore, polyolefin resins have good tracking resistance due to their hydrocarbon chain structure. Therefore, polyolefin resins contribute to improving the chemical resistance and tracking resistance of the three-dimensional molded insulator 1.
  • polypropylene resin is preferably used.
  • Polypropylene resin particularly improves the chemical resistance and tracking resistance of the three-dimensional molded insulator 1.
  • polyamide resins examples include polycaproamide (polyamide 6), polytetramethylene adipamide (polyamide 46), polyhexamethylene adipamide (polyamide 66), polyhexamethylene sebacamide (polyamide 610), polyhexamethylene dodecamide (polyamide 612), polyundecamethylene adipamide (polyamide 116), polyundecaneamide (polyamide 11), polydodecanamide (polyamide 12), polytrimethylhexamethylene terephthalamide (polyamide TMHT), polyhexamethylene terephthalamide (polyamide 6T), polyhexamethylene isophthalamide (polyamide 6I), and polyhexamethylene sebacamide (polyamide 610).
  • polyisopropylamine examples include ethylene terephthalic/isophthalamide (polyamide 6T/6I), polybis(4-aminocyclohexyl)methanedodecamide (polyamide PACM12), polybis(3-methyl-4-aminocyclohexyl)methanedodecamide (polyamide dimethyl PACM12), polymetaxylylene adipamide (polyamide MXD6), polynonamethylene terephthalamide (polyamide 9T), polydecamethylene terephthalamide (polyamide 10T), polyundecamethylene terephthalamide (polyamide 11T), and polyundecamethylene hexahydroterephthalamide (polyamide 11T(H)), and copolymers or mixtures thereof may also be used.
  • polyamide 6T/6I polybis(4-aminocyclohexyl)methanedodecamide
  • PACM12 polybis(3-methyl-4-aminocycl
  • Polyamide resin can be obtained by polymerizing or copolymerizing nylon salts, which are made from diamines and dicarboxylic acids, using known methods such as melt polymerization, solution polymerization, and solid-state polymerization. Using polyamide resins as the first and second resins can further improve the tracking resistance of the three-dimensionally molded insulator 1.
  • the diamine may be an aliphatic diamine, but alicyclic diamines or aromatic diamines are preferably used, with alicyclic diamines being more preferred.
  • polyamide resins having a cyclic structure such as an aromatic ring structure or an alicyclic structure.
  • Such polyamide resins contribute to improving the heat resistance of the three-dimensionally molded insulator 1.
  • alicyclic diamines in particular contribute to improving the tracking resistance of the three-dimensionally molded insulator 1.
  • alicyclic diamines examples include 1,3-cyclohexanediamine, 1,4-cyclohexanediamine, 1,3-cyclohexanedimethylamine, 1,4-cyclohexanedimethylamine, bis(4-aminocyclohexyl)methane, bis(4-aminocyclohexyl)propane, bis(3-methyl-4-aminocyclohexyl)methane, bis(3-methyl-4-aminocyclohexyl)propane, 5-amino-2,2,4-trimethyl-1-cyclopentanemethylamine, 5-amino-1,3,3-trimethylcyclohexanemethylamine (isophoronediamine), bis(aminopropyl)piperazine, bis(aminoethyl)piperazine, norbornanedimethylamine, and tricyclodecanedimethylamine, and one or more of these may be used.
  • aromatic diamines examples include m-xylylenediamine and p-xylylenediamine.
  • the dicarboxylic acid may be an alicyclic dicarboxylic acid or an aromatic dicarboxylic acid, but an aliphatic dicarboxylic acid is preferably used. This allows the preparation of a polyamide resin with a hydrocarbon chain structure. Such a polyamide resin contributes to improving the tracking resistance of the three-dimensionally molded insulator 1.
  • Dicarboxylic acids include, for example, aliphatic dicarboxylic acids such as adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid, dodecanedioic acid, tridecanedioic acid, tetradecanedioic acid, pentadecanedioic acid, hexadecanedioic acid, octadecanedioic acid, and eicosanedioic acid; alicyclic dicarboxylic acids such as 1,3-cyclohexanedicarboxylic acid, 1,4-cyclohexanedicarboxylic acid, dicyclohexanemethane-4,4'-dicarboxylic acid, and norbornanedicarboxylic acid; and aromatic dicarboxylic acids such as isophthalic acid, terephthalic acid, 1,4-naphthalenedicar
  • the polyamide resin preferably used is polyamide 6T, polyamide PACM12, polyamide dimethyl PACM12, polyamide MXD6, polyamide 9T, polyamide 10T, polyamide 11T, or polyamide 11T(H), and more preferably polyamide PACM12 or polyamide dimethyl PACM12. These have both a cyclic structure such as an aromatic ring structure or an alicyclic structure, and a structure derived from an aliphatic monomer, and therefore contribute to improving both the heat resistance and tracking resistance of the three-dimensionally molded insulator 1.
  • Polyamide PACM12 contains a structural unit represented by the following formula (2).
  • the polyamide PACM12 is synthesized from bis(4-aminocyclohexyl)methane (PACM) and dodecanedioic acid.
  • Polyamide dimethyl PACM12 contains a structural unit represented by the following formula (3).
  • polyamide dimethyl PACM12 is synthesized using bis(3-methyl-4-aminocyclohexyl)methane (MACM) and dodecanedioic acid as raw materials.
  • aliphatic polycarbonate resins include resins containing aliphatic carbonate units having 2 to 12 carbon atoms. Specific examples include polyethylene carbonate, polypropylene carbonate, polytrimethylene carbonate, polytetramethylene carbonate, polypentamethylene carbonate, polyhexamethylene carbonate, polyheptamethylene carbonate, polyoctamethylene carbonate, polynonamemethylene carbonate, polydecamethylene carbonate, polyoxydiethylene carbonate, poly-3,6-dioxyoctane carbonate, poly-3,6,9-trioxyundecane carbonate, polyoxydipropylene carbonate, polycyclopentene carbonate, and polycyclohexene carbonate.
  • the aliphatic polycarbonate resin may also be a resin containing aliphatic carbonate units containing a diol residue represented by the following formula (4):
  • R 5 to R 8 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, or an aryl group.
  • Aliphatic polycarbonate resins preferably contain 30 mol% to 100 mol% of aliphatic carbonate units containing a diol residue represented by formula (4) above, and more preferably 50 mol% to 90 mol% of all structural units.
  • the diol residue represented by the above formula (4) has a structure in which two tetrahydrofuran rings are fused together.
  • the glass transition temperature Tg of the aliphatic polycarbonate resin can be increased.
  • a three-dimensional molded insulator 1 with excellent heat resistance and tracking resistance can be obtained.
  • Aromatic Polycarbonate resins can be obtained by methods such as the phosgene process in which various dihydroxydiaryl compounds are reacted with phosgene, the transesterification process in which a dihydroxydiaryl compound is reacted with a carbonate ester such as diphenyl carbonate, the ring-opening polymerization of a cyclic carbonate compound, or the interfacial polycondensation process.
  • Such aromatic polycarbonate resins impart excellent heat resistance and flame retardancy to the three-dimensionally molded insulator 1 due to their aromatic ring structure.
  • dihydroxydiaryl compounds include bis(hydroxyaryl)alkanes such as bis(4-hydroxyphenyl)methane, 1,1-bis(4-hydroxyphenyl)ethane, 2,2-bis(4-hydroxyphenyl)butane, 2,2-bis(4-hydroxyphenyl)octane, bis(4-hydroxyphenyl)phenylmethane, 2,2-bis(4-hydroxyphenyl-3-methylphenyl)propane, and 1,1-bis(4-hydroxy-3-tert-butylphenyl)propane, and bis(hydroxyaryl)cycloalkanes such as 1,1-bis(4-hydroxyphenyl)cyclopentane and 1,1-bis(4-hydroxyphenyl)cyclohexane.
  • bis(hydroxyaryl)alkanes such as bis(4-hydroxyphenyl)methane, 1,1-bis(4-hydroxyphenyl)ethane, 2,2-bis(4-hydroxyphenyl)butane, 2,
  • Examples include ketones, dihydroxydiaryl ethers such as 4,4'-dihydroxydiphenyl ether and 4,4'-dihydroxy-3,3'-dimethyldiphenyl ether, dihydroxydiaryl sulfides such as 4,4'-dihydroxydiphenyl sulfide and 4,4'-dihydroxy-3,3'-dimethyldiphenyl sulfide, dihydroxydiaryl sulfoxides such as 4,4'-dihydroxydiphenyl sulfoxide and 4,4'-dihydroxy-3,3'-dimethyldiphenyl sulfoxide, and dihydroxydiaryl sulfones such as 4,4'-dihydroxydiphenyl sulfone and 4,4'-dihydroxy-3,3'-dimethyldiphenyl sulfone. These may be used alone or in combination of two or more.
  • Aromatic polycarbonate resins include, in particular, resins having structural units represented by the following formula (1):
  • R1 and R2 independently represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 5 to 7 carbon atoms, an aryl group having 6 to 12 carbon atoms, or a halogen atom.
  • m and n independently represent an integer of 0 to 4.
  • X represents a direct bond, O, S, SO, SO2 , CR3R4 ( R3 and R4 independently represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 12 carbon atoms, and may be the same or different), an alkylene group having 2 to 10 carbon atoms, a polydimethylsiloxane group, or C( CF3 ) 2 .)
  • Aromatic polycarbonate resins having structural units represented by the above formula (1) impart particularly excellent heat resistance and flame retardancy to the three-dimensionally molded insulator 1.
  • the proportion of structural units represented by the above formula (1) is preferably 55 mol% or more, more preferably 70 mol% or more, and even more preferably 80 mol% or more.
  • R 1 and R 2 are each a hydrogen atom
  • X is CR 3 R 4
  • R 3 and R 4 are each a methyl group or a hydrogen atom.
  • the aromatic polycarbonate resin is preferably a polycarbonate resin having structural units derived from bisphenol A (2,2-bis(4-hydroxyphenyl)propane). This further enhances the flame retardancy and heat resistance of the three-dimensional molded insulator 1.
  • the viscosity average molecular weight (M) of the aromatic polycarbonate resin is not particularly limited, but is preferably 5,000 or more and 100,000 or less, more preferably 12,000 or more and 35,000 or less, even more preferably 15,000 or more and 30,000 or less, and particularly preferably 18,000 or more and 28,000 or less.
  • the viscosity is measured using an Ubbelohde viscometer at 20°C.
  • the aromatic polycarbonate resin may be a blend of a resin with a high viscosity average molecular weight (high viscosity resin) and a resin with a low viscosity average molecular weight (low viscosity resin). This allows for the production of a three-dimensional molded insulator 1 with excellent moldability without compromising the heat resistance and flame retardancy inherent to the aromatic polycarbonate resin.
  • the blending ratio M1/M2 is preferably 0.5 or more and 8.0 or less by mass, more preferably 0.8 or more and 6.0 or less, and even more preferably 0.9 or more and 5.0 or less. This results in a three-dimensional molded insulator 1 with particularly good moldability.
  • the glass transition temperature Tg of the aromatic polycarbonate resin is preferably 130°C or higher and lower than 160°C, and more preferably 140°C or higher and 155°C or lower. If the glass transition temperature Tg of the aromatic polycarbonate resin is within this range, the heat resistance and flame retardancy of the three-dimensional molded insulator 1 can be sufficiently improved.
  • the glass transition temperature Tg of the aromatic polycarbonate resin is measured by DSC (differential scanning calorimetry). The heating rate in the DSC method is 10°C/min.
  • the content of aromatic polycarbonate resin in the three-dimensional molded insulator 1 is not particularly limited, but is preferably 70% by mass or more, and more preferably 80% by mass or more.
  • the melt volume rate (MVR) of the aromatic polycarbonate resin at 300°C and a load of 1.2 kg is preferably 5 cm 3 /10 min or more and 20 cm 3 /10 min or less, and more preferably 8 cm 3 /10 min or more and 15 cm 3 /10 min or less. This improves the moldability of the three-dimensionally molded insulator 1 during secondary processing, particularly the ability to prevent defects such as distortion during vacuum molding. If the melt volume rate is below the lower limit, the fluidity may be insufficient and moldability may be reduced. On the other hand, if the melt volume rate is above the upper limit, the impact resistance of the molded body may be reduced. The melt volume rate is measured in accordance with the test method specified in JIS K 7210:2014.
  • the aromatic polycarbonate resin may be a resin containing carbonate units (bisphenolisophorone carbonate units) represented by the following formula (5). Such aromatic polycarbonate resins have higher heat resistance than aromatic polycarbonate resins containing carbonate units represented by the above formula (1).
  • polycarbonate resins containing bisphenolisophorone carbonate units may be referred to as "heat-resistant polycarbonate resins.”
  • R a and R b each independently represent an alkyl group having 1 to 12 carbon atoms
  • R g each independently represent an alkyl group having 1 to 12 carbon atoms
  • p and q each independently represent an integer of 0 to 4
  • t represents an integer of 0 to 10.
  • At least one of R a and R b is located meta to the cyclohexylidene bridging group.
  • a specific example of such a heat-resistant polycarbonate resin is a resin containing carbonate units (bisphenol A carbonate units) derived from bisphenol A (2,2-bis(4-hydroxyphenyl)propane) and carbonate units (bisphenol isophorone carbonate units) represented by formula (5).
  • carbonate units bisphenol A carbonate units
  • p and q in the bisphenol isophorone carbonate units are each 0, each R g is a methyl group, and t is 3.
  • the bisphenol isophorone carbonate units are particularly carbonate units containing a structure derived from bisphenol TMC (1,1-bis-(4-hydroxyphenyl)-3,3,5-trimethylcyclohexane).
  • Such bisphenol isophorone carbonate units contain both aromatic ring structures and alicyclic structures. Therefore, the bisphenol isophorone carbonate units contribute particularly to improving both the heat resistance (flame retardancy) and tracking resistance of the three-dimensional molded insulator 1.
  • the proportion of bisphenol isophorone carbonate units is preferably 30% by mass or more, more preferably 35% to 60% by mass, and even more preferably 40% to 50% by mass. This contributes to improving both the heat resistance (flame retardancy) and tracking resistance of the three-dimensional molded insulator 1. It also improves the moldability of the heat-resistant polycarbonate resin.
  • the proportion of bisphenol isophorone carbonate units falls below the lower limit, at least one of the heat resistance (flame retardancy) and tracking resistance of the three-dimensionally molded insulator 1 may decrease.
  • the proportion of bisphenol isophorone carbonate units exceeds the upper limit, the moldability of the heat-resistant polycarbonate resin may decrease, and the dimensional accuracy of the three-dimensionally molded insulator 1 may decrease.
  • the glass transition temperature Tg of the heat-resistant polycarbonate resin is preferably 160°C or higher and 230°C or lower, and more preferably 165°C or higher and 220°C or lower. If the glass transition temperature Tg of the heat-resistant polycarbonate resin is within this range, the heat resistance of the three-dimensional molded insulator 1 can be particularly improved. As a result, even if creeping discharge occurs in the three-dimensional molded insulator 1, discoloration due to carbonization can be particularly suppressed, thereby particularly suppressing the occurrence of poor appearance and the deterioration of insulation properties due to carbonization.
  • the glass transition temperature Tg is below the lower limit, there is a risk that poor appearance and carbonization due to creeping discharge may occur. On the other hand, if the glass transition temperature Tg is above the upper limit, the molding temperature of the heat-resistant polycarbonate resin may become too high, making molding defects more likely to occur. Furthermore, when heat-resistant polycarbonate resin is alloyed with a compatible resin, there is a risk that thermal degradation of the compatible resin may occur, depending on the heat resistance of the compatible resin.
  • the compatible resins used are the aforementioned polyolefin resins, polyamide resins, aliphatic polycarbonate resins, and aromatic polycarbonate resins (heat-resistant polycarbonate resins) containing carbonate units represented by formula (5) above.
  • the aromatic polycarbonate resin alloyed with these compatible resins is preferably a resin having a structural unit represented by formula (1) above.
  • the tracking resistance (comparative tracking index CTI) of the compatible resin is higher than that of the aromatic polycarbonate resin having a structural unit represented by formula (1) above. This results in a three-dimensional molded insulator 1 that combines heat resistance and tracking resistance.
  • the proportion of the compatible resin in the polymer alloy is not particularly limited, but is preferably 5% by mass or more and 80% by mass or less, more preferably 10% by mass or more and 75% by mass or less, even more preferably 20% by mass or more and 70% by mass or less, and particularly preferably 40% by mass or more and 65% by mass or less.
  • This configuration makes it possible to achieve a polymer alloy that has a good balance between the properties of the compatible resin, such as heat resistance and flame retardancy, of the aromatic polycarbonate resin having the structural unit represented by formula (1) above.
  • the comparative tracking index CTI of the compatible resin is preferably 400 V or higher, and more preferably 600 V or higher. This results in a three-dimensional molded insulator 1 with particularly good tracking resistance.
  • the comparative tracking index CTI of the compatible resin is preferably at least 50 V higher than the comparative tracking index CTI of the aromatic polycarbonate resin, and more preferably at least 100 V higher. This results in a three-dimensional molded insulator 1 that better combines flame retardancy and tracking resistance.
  • the glass transition temperature Tg of the compatible resin is preferably 125°C or higher, and more preferably 130°C or higher and 230°C or lower. This gives the compatible resin heat resistance, making it easier to suppress discoloration due to carbonization, even if creeping discharge occurs in the three-dimensional molded insulator 1. As a result, it is possible to suppress the occurrence of poor appearance in the three-dimensional molded insulator 1 and the deterioration of insulation properties due to carbonization.
  • the compatible resin preferably has an aromatic monomer molar fraction of 90% or less, more preferably 70% or less, and even more preferably 50% or less of the total monomer components.
  • aromatic monomer refers to a monomer (aromatic compound) that contains an aromatic ring structure.
  • the polymer alloy may also contain resins other than the above components.
  • the polymer alloy may be an alloy of three or more resins.
  • the raw materials are premixed, then melted and kneaded using a batch kneader or twin-screw extruder. This mechanically stirs the raw materials, resulting in a kneaded product containing a polymer alloy.
  • the kneading and melting conditions are set appropriately depending on the type and blending ratio of the raw materials, but examples include a temperature of 200-250°C, a screw rotation speed of 300-1000 rpm, and a kneading time of approximately 3-20 minutes.
  • the kneaded product is pelletized as necessary.
  • a compatibilizer may be added to the raw materials as needed. By adding a compatibilizer, the compatibility of the resins being alloyed can be further improved.
  • the amount of compatibilizer added is preferably 2 to 30 parts by mass, and more preferably 5 to 20 parts by mass, per 100 parts by mass of resin.
  • the three-dimensionally molded insulator 1 may contain any additive.
  • additives include flame retardants, colorants, stabilizers, lubricants, processing aids, antistatic agents, antioxidants, neutralizing agents, UV absorbers, dispersants, thickeners, mold release agents, fillers, flow improvers, plasticizers, and antibacterial agents. Note that one type of additive may be contained, or two or more types may be contained in any combination.
  • the flame retardant enhances the flame retardancy of the three-dimensionally molded insulator 1 .
  • the flame retardant include inorganic phosphorus-based flame retardants such as halogen-based flame retardants, red phosphorus and polyphosphate-based flame retardants such as ammonium polyphosphate, organic phosphorus-based flame retardants such as triaryl phosphate ester compounds, metal hydroxide-based compounds, antimony oxide-based compounds, nitrogen-containing compounds, etc.
  • the flame retardant may be a combination of two or more of these.
  • phosphorus-based flame retardants or nitrogen-containing compounds are preferably used as flame retardants, with nitrogen-containing compounds being more preferred.
  • the flame retardant contains a nitrogen-containing compound, the flame retardancy of the three-dimensional molded insulator 1 can be further improved.
  • nitrogen-containing compounds do not contain halogen atoms, a so-called halogen-free, fluorine-free three-dimensional molded insulator 1 can be realized.
  • Examples of the nitrogen-containing compound include compounds having a triazine skeleton.
  • Examples of compounds having a triazine skeleton include melamine; melamine derivatives such as butyl melamine, trimethylol melamine, hexamethylol melamine, hexamethoxymethyl melamine, and melamine phosphate; cyanuric acid; cyanuric acid derivatives such as methyl cyanurate, diethyl cyanurate, trimethyl cyanurate, and triethyl cyanurate; isocyanuric acid; isocyanuric acid derivatives such as methyl isocyanurate, N,N'-diethyl isocyanurate, trismethyl isocyanurate, trisethyl isocyanurate, bis(2-carboxyethyl)isocyanurate, 1,3,5-tris(2-carboxyethyl)isocyanurate, and tris(2,3-epoxypropy
  • the compound having a triazine skeleton is preferably one or more melamine-based compounds selected from the group consisting of melamine, melamine cyanurate, melamine isocyanurate, and derivatives thereof, with melamine cyanurate being more preferred. This can particularly enhance the flame retardancy of the three-dimensional molded insulator 1.
  • the amount of flame retardant added is preferably 0.1 to 30 parts by mass, more preferably 1 to 20 parts by mass, and even more preferably 3 to 10 parts by mass, per 100 parts by mass of resin.
  • the flame retardant is, for example, in particulate form.
  • the average particle size of the flame retardant is preferably 0.01 ⁇ m or more and 10 ⁇ m or less, more preferably 0.05 ⁇ m or more and 5 ⁇ m or less, and even more preferably 0.2 ⁇ m or more and 2 ⁇ m or less.
  • the average particle size of the flame retardant is the particle size at which the cumulative total from the small diameter side in the volume-based particle size distribution is 50% as measured using a laser diffraction particle size distribution analyzer.
  • the total amount of additives added is preferably 0.1 to 10 parts by mass, more preferably 0.3 to 5 parts by mass, and even more preferably 0.5 to 3 parts by mass, per 100 parts by mass of resin.
  • FIG. 7 is a cross-sectional view showing a three-dimensionally shaped insulator 1 according to a modified example.
  • the three-dimensionally molded insulator 1 shown in Figure 7 is similar to the three-dimensionally molded insulator 1 shown in Figure 1, except that it has a multi-layer structure.
  • the three-dimensional molded insulator 1 shown in Figure 7 has a first layer 101, an intermediate layer 103, and a second layer 102, which are layered from bottom to top.
  • the intermediate layer 103 has a lower surface (first surface) and an upper surface (second surface) that are opposite each other, and preferably contains an aromatic polycarbonate resin and a flame retardant.
  • the first layer 101 is layered on the lower surface (first surface) of the intermediate layer 103 and contains a first resin.
  • the second layer 102 is layered on the upper surface (second surface) of the intermediate layer 103 and contains a second resin.
  • the first resin and the second resin are preferably materials with higher tracking resistance than the aromatic polycarbonate resin contained in the intermediate layer 103.
  • the aromatic polycarbonate resin is a polycarbonate resin containing an aromatic ring structure in the main chain, and the high proportion of aromatic ring structures provides the intermediate layer 103 with good heat resistance.
  • the intermediate layer 103 also contains a flame retardant. These factors act to provide the intermediate layer 103 with good flame retardancy.
  • the intermediate layer 103 is sandwiched between the first layer 101 and the second layer 102. Therefore, if a creeping discharge occurs in the three-dimensionally molded insulator 1, the intermediate layer 103 is prevented from being directly exposed to arc discharge, etc.
  • the three-dimensionally molded insulator 1 is endowed with good tracking resistance. Therefore, a three-dimensionally molded insulator 1 with excellent flame retardancy and tracking resistance is obtained.
  • pinhole resistance further enhances the insulation properties, flame retardancy, and tracking resistance of the three-dimensional molded insulator 1.
  • the comparative tracking index CTI of each of the first resin and second resin is preferably 400 V or higher, and more preferably 600 V or higher. This results in a first resin and second resin with particularly good tracking resistance.
  • the comparative tracking index CTI of each of the first resin and the second resin is preferably at least 50 V higher than the comparative tracking index CTI of the aromatic polycarbonate resin, and more preferably at least 100 V higher. This results in a three-dimensional molded insulator 1 that better balances flame retardancy and tracking resistance.
  • the glass transition temperature Tg of each of the first resin and the second resin is preferably 125°C or higher, and more preferably 130°C or higher and lower than 200°C. This provides heat resistance to the first resin and the second resin, making it easier to suppress coloration due to carbonization even if creeping discharge occurs in the first layer 101 and the second layer 102, for example. As a result, the occurrence of poor appearance in the first layer 101 and the second layer 102 and the deterioration of insulation due to carbonization can be suppressed.
  • the glass transition temperature Tg of each of the first resin and the second resin is measured using a differential scanning calorimeter (DSC) method. The heating rate in the DSC method is 10°C/min.
  • the melt volume rate (MVR) of each of the first resin and the second resin at 300°C and a load of 1.2 kg is preferably 5 cm 3 /10 min or more and 30 cm 3 /10 min or less, and more preferably 8 cm 3 /10 min or more and 20 cm 3 /10 min or less. This improves the moldability of the three-dimensionally molded insulator 1 during secondary processing, particularly the ability to prevent defects such as distortion during vacuum molding. If the melt volume rate is below the lower limit, the fluidity may be insufficient and moldability may be reduced. On the other hand, if the melt volume rate is above the upper limit, the impact resistance of the molded body may be reduced.
  • the melt volume rate is measured in accordance with the test method specified in JIS K 7210:2014.
  • first resin and second resin preferably have an aromatic monomer molar fraction of 90% or less, more preferably 70% or less, and even more preferably 50% or less, of the total monomer components.
  • aromatic monomer refers to a monomer (aromatic compound) containing an aromatic ring structure.
  • the content of the first resin in the first layer 101 and the content of the second resin in the second layer 102 are preferably 70% by mass or more, and more preferably 80% by mass or more.
  • the first resin and the second resin may be the resin materials described above.
  • the tracking resistance and glass transition temperature Tg of resins (compounds) that can be used for the three-dimensionally molded insulator 1 according to this embodiment are exemplified.
  • Table 1 below lists the CTI value, which indicates tracking resistance, and the glass transition temperature Tg for various resins that can be used as the resin materials (including the first resin and second resin) mentioned above, and for the aromatic polycarbonate resin mentioned above.
  • the viscosity average molecular weight is also listed.
  • aromatic polycarbonate resins tend to have slightly lower tracking resistance than other resins. For this reason, using these resins in combination with aromatic polycarbonate resins is useful from the perspective of achieving the best possible properties of both resins.
  • Methods for manufacturing the three-dimensional molded insulator 1 shown in Figure 7 include, for example, co-extrusion, dry lamination, extrusion lamination, and hot melt.
  • the tracking resistance of the three-dimensionally shaped insulator 1 according to the embodiment can be quantified by the comparative tracking index CTI, which is an index of tracking resistance measured in accordance with ASTM D3638.
  • the comparative tracking index CTI (CTI value) of the three-dimensionally molded insulator 1 according to the embodiment is preferably 600 V or higher. If the CTI value is within the above range, the rank PLC, which indicates tracking resistance, will be the highest rank of 0. Therefore, it can be said that a three-dimensionally molded insulator 1 with a CTI value within the above range has particularly good tracking resistance.
  • the test specimen used is a three-dimensionally molded insulator 1 with a thickness of 3 mm or more.
  • the test specimen may also be constructed by stacking multiple three-dimensionally molded insulators 1.
  • test specimens used are sheets of these resins obtained by extrusion molding, each having a thickness of 3 mm or more.
  • the flame retardancy of the three-dimensionally molded insulator 1 according to the embodiment can be quantified by the flame retardancy rank determined in accordance with the UL94 standard (rank determined by the UL94V test or UL94VTM test).
  • the flame retardancy of the three-dimensional molded insulator 1 according to the embodiment is preferably such that the UL94V test results in a V-0 rating for test specimens with a thickness of 0.4 mm or more, or the UL94VTM test results in a VTM-0 rating for test specimens with a thickness of 0.4 mm or more.
  • Three-dimensional molded insulators 1 that meet these evaluation ranks achieve the highest rank in each test, and therefore can be said to have particularly good flame retardancy.
  • UL94V test a vertical combustion test is conducted using test specimens measuring 125 ⁇ 5mm x 13.0 ⁇ 0.5mm and with a thickness of 0.4mm or more and less than 13mm.
  • the UL94VTM test is also performed when the test specimen is too thin to perform the UL94V test.
  • the UL94VTM test involves a vertical flame test using a test specimen measuring 200mm x 50mm and with a thickness of 0.4mm to 0.25mm.
  • the breakdown voltage of the three-dimensionally shaped insulator 1 according to the embodiment is a breakdown voltage measured in accordance with the method for measuring breakdown strength (AC test) specified in JIS C 2318:2020.
  • the breakdown voltage of the three-dimensionally molded insulator 1 according to the embodiment is preferably 5 kV or higher, more preferably 7 kV to 60 kV, and even more preferably 10 kV to 50 kV.
  • a three-dimensionally molded insulator 1 that satisfies this breakdown voltage contributes to ensuring sufficient insulation even when the insulation clearance is short. Note that the breakdown voltage may exceed the upper limit, but is preferably below the upper limit when considering minimizing individual differences.
  • thermoplastic insulating sheet is produced using raw materials containing the above-mentioned resin material by methods such as calendaring, extrusion, pressing, or casting.
  • Thermoplastic insulating sheets with a multilayer structure are produced using the methods described above.
  • thermoforming Next, the thermoplastic insulating sheet is subjected to secondary processing, including thermoforming, to form the recesses 12.
  • Thermoforming methods include vacuum forming, pressure forming, and vacuum pressure forming. This type of thermoforming results in a three-dimensionally formed insulator 1 with little variation in thickness due to shape and high shape precision. Furthermore, vacuum forming and vacuum pressure forming can achieve particularly high shape precision.
  • the heating temperature during thermoforming is not particularly limited, but is preferably between 130°C and 260°C, and more preferably between 140°C and 240°C. This results in a three-dimensionally molded insulator 1 with particularly little variation in thickness and particularly high shape precision.
  • thermoforming examples include folding, punching, etc.
  • Figure 8 is a cross-sectional view showing a control device 8 in which a three-dimensional molded insulator 1 and a circuit board 9 according to the embodiment are housed within a case 80.
  • the control device 8 shown in Figure 8 comprises a circuit board 9, a three-dimensional molded insulator 1, and a case 80 that houses these.
  • the device that comprises the circuit board 9 is not limited to the control device 8, and may be a device with any function.
  • the case 80 is box-shaped with a bottom and includes a housing 81 that is open at the top, a lid 82 that covers the opening of the housing 81, and a heat dissipation sheet 85.
  • the housing 81 has a bottom that extends along the X-Y plane and a wall that rises upward from the outer edge of the bottom.
  • a circuit board 9 is housed inside the housing 81.
  • the circuit board 9 is fixed to the housing 81 with fixing screws 94 (not shown in Figure 8).
  • the circuit board 9 is also fixed in contact with the heat dissipation sheet 85.
  • the lid 82 only needs to cover the opening of the housing 81, but it is preferable that it be liquid-tight or airtight. This ensures stable protection of the circuit board 9 from the external environment.
  • the materials that make up the housing 81 and the lid 82 include, for example, metal materials, ceramic materials, and resin materials. They may also be composite materials made up of two or more of these. Of these, metal materials are preferred. Metal materials have excellent thermal conductivity and mechanical properties, making them useful as materials for making up the housing 81 and the lid 82. Furthermore, metal materials often have excellent electrical conductivity and magnetic permeability, making it possible to use the housing 81 and the lid 82 as electromagnetic shields or magnetic field shields.
  • Short circuits are particularly likely to occur between the components protruding from the top surface of the wiring board 90 and the lid portion 82, so conventionally, it would be necessary to ensure a necessary spatial distance between these two.
  • this spatial distance can be shortened.
  • the distance S3 between the power semiconductor element 91 and the lid portion 82, and the distance S4 between the bus bar 92 and the lid portion 82 can both be shortened. This makes it possible to make the control device 8 thinner and more compact.
  • the separation distances S3 and S4 vary depending on factors such as the voltage applied to the components, but as an example, they are preferably 10 mm or less, and more preferably 5 mm or less. This allows the control device 8 to be made even thinner and more compact.
  • the three-dimensional molded insulator 1 By using the three-dimensional molded insulator 1, sufficient space SP can be secured between the flat portion 11 of the three-dimensional molded insulator 1 and the lid portion 82. This space SP ensures insulation from the power semiconductor element 91 and bus bar 92, so even if it is used to house another object, for example, the occurrence of short circuits can be suppressed.
  • FIG. 9 is a cross-sectional view showing a modification of the control device 8 of FIG.
  • the case 80 shown in FIG. 9 is similar to the case 80 shown in FIG. 8 except that a partition wall 83 is added.
  • the partition wall 83 is installed inside the housing 81 and separates the interior space of the housing 81 into upper and lower sections.
  • a circuit board 9 and a three-dimensionally molded insulator 1 are accommodated in the space below the partition wall 83.
  • a circuit board 7 separate from the circuit board 9 is accommodated in the space above the partition wall 83.
  • the circuit board 7 includes a wiring board 71 and a semiconductor element 72.
  • FIG. 9 Another flat insulating sheet 2 is provided on the underside of the lid portion 82 shown in Figure 9.
  • This flat insulating sheet 2 has a flat plate shape.
  • the three-dimensionally molded insulator 1 is preferably molded into a shape that has a recess 12 and a flat portion 11 connected to the recess 12.
  • the three-dimensionally molded insulator 1 has a through hole 13 that penetrates the flat portion 11 in the thickness direction.
  • the thickness t12b of the wall portion 12b be 20% or more and 95% or less of the thickness t11 of the flat portion 11.
  • the wall portion 12b has sufficient rigidity to support the shape of the recess 12 and can contribute to further reducing the dead space on the sides of the recess 12.
  • the thickness t11 of the flat portion 11 be 0.05 mm or more and 1.00 mm or less.
  • This configuration results in a three-dimensional molded insulator 1 that is excellent in flame retardancy, tracking resistance, and insulation, and is relatively easy to manufacture.
  • the three-dimensionally molded insulator 1 according to the embodiment may also contain a flame retardant. With this configuration, a three-dimensional molded insulator 1 having excellent flame retardancy can be obtained.
  • the three-dimensional molded insulator 1 according to the above embodiment is primarily made of thermoplastic resin.
  • the thermoplastic resin may also contain an aromatic polycarbonate resin. With this configuration, the three-dimensional molded insulator 1 can be obtained, which has excellent heat resistance and flame retardancy due to the aromatic ring structure.
  • the three-dimensionally molded insulator 1 according to the above embodiment preferably has a comparative tracking index (CTI), which is an index of tracking resistance measured in accordance with ASTM D3638, of 600 V or more.
  • CTI comparative tracking index
  • This configuration results in a three-dimensional molded insulator 1 with particularly good tracking resistance.
  • the three-dimensionally molded insulator 1 preferably has a flame retardancy rank determined in accordance with the UL94 standard of V-0 or VTM-0 for test specimens with a thickness of 0.4 mm or more. With this configuration, a three-dimensional molded insulator 1 having particularly good flame retardancy can be obtained.
  • the manufacturing method of the three-dimensional molded insulator according to the above embodiment is a manufacturing method of the three-dimensional molded insulator 1, in which a flat thermoplastic insulating sheet is subjected to secondary processing including thermoforming to form the recess 12. With this configuration, it is possible to manufacture a three-dimensionally molded insulator with high shape accuracy.
  • thermoforming is preferably vacuum forming or vacuum/pressure forming. With this configuration, it is possible to manufacture a three-dimensionally molded insulator with particularly high shape accuracy.
  • the three-dimensionally molded insulator of the present invention may contain additives other than those described in the above embodiment.
  • the three-dimensionally molded insulator of the present invention may have layers with any desired function added to the layer structure described in the above embodiment, such as an adhesive layer, bonding layer, protective layer, or release layer.
  • the method for manufacturing a three-dimensionally molded insulator of the present invention may include any additional steps for any purpose added to the above embodiment.
  • the present invention provides a three-dimensionally molded insulator that can reduce the dead space that occurs around voltage-applied components and enable effective use of the space in which the voltage-applied components are housed. Furthermore, the present invention makes it possible to manufacture three-dimensionally molded insulators with high shape accuracy. Therefore, the present invention has industrial applicability.

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Abstract

The present invention provides a three-dimensional molded insulator that enables reduction of dead space between a circuit board and the three-dimensional molded insulator, thereby enabling effective use of a space in which the circuit board is accommodated, and a method for manufacturing a three-dimensional molded insulator, the method enabling the manufacture of a three-dimensional molded insulator having high shape accuracy. This three-dimensional molded insulator covers a component to which a voltage is applied and is characterized by: being formed into a shape with a recess portion including a bottom portion and a wall portion provided at an end of the bottom portion; and being used in a state in which a component is inserted into the recess portion.

Description

三次元成形絶縁体および三次元成形絶縁体の製造方法Three-dimensionally formed insulator and method for manufacturing the same

 本発明は、三次元成形絶縁体および三次元成形絶縁体の製造方法に関する。 The present invention relates to three-dimensionally formed insulators and methods for manufacturing three-dimensionally formed insulators.

 電子機器内には、基板と、基板上に設けられた様々な電圧印加部品と、を備える回路基板が収納される。このような回路基板の周囲では、電気的な短絡を防ぐため、所定の絶縁距離が確保される。 Electronic devices house circuit boards that include a substrate and various voltage-applied components mounted on the substrate. A certain insulation distance is maintained around such circuit boards to prevent electrical short circuits.

 例えば、特許文献1には、ポリカーボネート樹脂と、リン酸エステル化合物と、繊維状物質と、を配合してなる難燃性樹脂組成物が開示されている。また、この難燃性樹脂組成物をシート成形してなる絶縁シートが開示されている。絶縁シートは、電子機器内の狭い隙間に収納できる点で有用である。絶縁シートを、例えば回路基板の周囲に存在する導体との間に配置することにより、絶縁空間距離の短縮が可能になる。 For example, Patent Document 1 discloses a flame-retardant resin composition made by blending polycarbonate resin, a phosphate ester compound, and a fibrous material. It also discloses an insulating sheet made by molding this flame-retardant resin composition into a sheet. Insulating sheets are useful because they can be stored in narrow gaps within electronic devices. By placing an insulating sheet between a conductor present around a circuit board, for example, it is possible to shorten the insulation spatial distance.

特開2002-030209号公報Japanese Patent Application Laid-Open No. 2002-030209

 しかしながら、電圧印加部品の背の高さ(厚さ)は一定ではないことから、それに応じて回路基板の厚さは部分的に異なっている。従来の絶縁シートは、平板状をなしているため、最も背が高い電圧印加部品に合わせて配置される。そうすると、基板と絶縁シートとの間(電圧印加部品の周囲)には、大きなデッドスペースが生じるという課題がある。このデッドスペースは、電子機器の小型化を阻む一因となっている。 However, because the height (thickness) of voltage-applied components is not uniform, the thickness of the circuit board varies accordingly. Conventional insulating sheets are flat, so they are positioned to fit the tallest voltage-applied component. This creates the problem of large dead spaces between the board and the insulating sheet (around the voltage-applied component). This dead space is one of the factors that hinder the miniaturization of electronic devices.

 また、回路基板に限らず、電圧印加部品の周囲において絶縁空間距離を短縮することは、電子機器の小型化に貢献できる。 Furthermore, shortening the insulating spatial distance around voltage-applied components, not just circuit boards, can contribute to the miniaturization of electronic devices.

 本発明の目的は、電圧印加部品の周囲に生じるデッドスペースを縮小でき、電圧印加部品が収容される空間の有効利用を可能にする三次元成形絶縁体、および形状精度の高い三次元成形絶縁体を製造可能な三次元成形絶縁体の製造方法を提供することにある。 The object of the present invention is to provide a three-dimensional molded insulator that can reduce the dead space that occurs around voltage-applied components and enable effective use of the space in which the voltage-applied components are housed, as well as a method for manufacturing three-dimensional molded insulators that can produce three-dimensional molded insulators with high shape accuracy.

 このような目的は、下記(1)~(12)に記載の本発明により達成される。
 (1) 電圧が印加される部品に被せられる三次元成形絶縁体であって、
 底部、および、前記底部の端部に設けられている壁部、を含む凹部を有する形状に成形されており、
 前記凹部内に前記部品が挿入された状態で用いられることを特徴とする三次元成形絶縁体。
These objects can be achieved by the present invention described in (1) to (12) below.
(1) A three-dimensionally shaped insulator that is placed over a component to which voltage is applied,
The container is molded into a shape having a recess including a bottom and a wall portion provided at an end of the bottom,
A three-dimensionally molded insulator characterized in that the component is inserted into the recess when used.

 (2) 前記部品と、前記部品が搭載されている基板と、を備える回路基板に被せて用いられ、
 前記凹部と、前記凹部に接続されている平坦部と、を有する形状に成形されている上記(1)に記載の三次元成形絶縁体。
(2) The device is used by covering a circuit board including the component and a board on which the component is mounted,
The three-dimensionally molded insulator according to (1) above, which is molded into a shape having the recess and a flat portion connected to the recess.

 (3) 前記平坦部を厚さ方向に貫通する貫通孔を有する上記(2)に記載の三次元成形絶縁体。 (3) A three-dimensionally molded insulator as described in (2) above, having a through hole penetrating the flat portion in the thickness direction.

 (4) 前記壁部の厚さは、前記平坦部の厚さの20%以上95%以下である上記(3)に記載の三次元成形絶縁体。 (4) A three-dimensionally molded insulator as described in (3) above, wherein the thickness of the wall portion is 20% or more and 95% or less of the thickness of the flat portion.

 (5) 前記平坦部の厚さは、0.05mm以上1.00mm以下である上記(3)または(4)に記載の三次元成形絶縁体。
 (6) 難燃剤を含む上記(1)ないし(4)のいずれかに記載の三次元成形絶縁体。
(5) The three-dimensionally molded insulator according to (3) or (4) above, wherein the thickness of the flat portion is 0.05 mm or more and 1.00 mm or less.
(6) The three-dimensionally molded insulator according to any one of (1) to (4) above, which contains a flame retardant.

 (7) 熱可塑性樹脂を主材料とする上記(1)ないし(4)のいずれかに記載の三次元成形絶縁体。 (7) A three-dimensionally molded insulator according to any one of (1) to (4) above, whose main material is a thermoplastic resin.

 (8) 前記熱可塑性樹脂は、芳香族ポリカーボネート樹脂を含む上記(7)に記載の三次元成形絶縁体。 (8) A three-dimensionally molded insulator according to (7) above, wherein the thermoplastic resin includes an aromatic polycarbonate resin.

 (9) ASTM D3638に準拠して測定された耐トラッキング性の指標となる比較トラッキング指数CTIが、600V以上である上記(1)ないし(4)のいずれかに記載の三次元成形絶縁体。 (9) A three-dimensionally molded insulator according to any one of (1) to (4) above, having a comparative tracking index (CTI), an index of tracking resistance measured in accordance with ASTM D3638, of 600 V or more.

 (10) UL94規格に準拠して測定された難燃性が、試験片厚み0.4mm以上においてV-0またはVTM-0である上記(1)ないし(4)のいずれかに記載の三次元成形絶縁体。 (10) A three-dimensionally molded insulator according to any one of (1) to (4) above, whose flame retardancy measured in accordance with the UL94 standard is V-0 or VTM-0 for a test specimen with a thickness of 0.4 mm or more.

 (11) 上記(1)ないし(4)のいずれかに記載の三次元成形絶縁体の製造方法であって、
 平坦な形状をなす熱可塑性絶縁シートに対し、熱成形を含む二次加工を行い、前記凹部を形成することを特徴とする三次元成形絶縁体の製造方法。
(11) A method for producing the three-dimensionally molded insulator according to any one of (1) to (4) above,
A method for manufacturing a three-dimensional molded insulator, characterized in that a flat thermoplastic insulating sheet is subjected to secondary processing including thermoforming to form the recesses.

 (12) 前記熱成形は、真空成形または真空圧空成形である上記(11)に記載の三次元成形絶縁体の製造方法。 (12) A method for producing a three-dimensionally molded insulator as described in (11) above, in which the thermoforming is vacuum forming or vacuum-pressure forming.

 本発明によれば、電圧印加部品の周囲に生じるデッドスペースを縮小でき、電圧印加部品が収容される空間の有効利用を可能にする三次元成形絶縁体が得られる。
 また、本発明によれば、形状精度の高い三次元成形絶縁体を製造することができる。
According to the present invention, a three-dimensionally molded insulator can be obtained that can reduce the dead space that occurs around voltage application components and enable effective use of the space in which the voltage application components are housed.
Furthermore, according to the present invention, it is possible to manufacture a three-dimensionally molded insulator with high shape accuracy.

図1は、実施形態に係る三次元成形絶縁体および三次元成形絶縁体が被せられる回路基板を示す斜視図である。FIG. 1 is a perspective view showing a three-dimensionally shaped insulator according to an embodiment and a circuit board on which the three-dimensionally shaped insulator is to be placed. 図2は、図1に示す回路基板のA-A線断面図である。FIG. 2 is a cross-sectional view of the circuit board shown in FIG. 1 taken along line AA. 図3は、図2の三次元成形絶縁体のみを示す断面図である。FIG. 3 is a cross-sectional view showing only the three-dimensionally shaped insulator of FIG. 図4は、図2の回路基板の変形例を示す断面図である。FIG. 4 is a cross-sectional view showing a modification of the circuit board of FIG. 図5は、実施形態の変形例に係る三次元成形絶縁体を示す上面図である。FIG. 5 is a top view showing a three-dimensionally shaped insulator according to a modified embodiment. 図6は、図5に示すバスバーおよび三次元成形絶縁体の断面図である。FIG. 6 is a cross-sectional view of the busbar and three-dimensionally shaped insulator shown in FIG. 図7は、変形例に係る三次元成形絶縁体を示す断面図である。FIG. 7 is a cross-sectional view showing a three-dimensionally shaped insulator according to a modified example. 図8は、実施形態に係る三次元成形絶縁体および回路基板がケース内に収容されてなる制御装置を示す断面図である。FIG. 8 is a cross-sectional view showing a control device in which the three-dimensionally molded insulator and the circuit board according to the embodiment are housed in a case. 図9は、図8の制御装置の変形例を示す断面図である。FIG. 9 is a cross-sectional view showing a modification of the control device of FIG.

 以下、本発明に係る三次元成形絶縁体および三次元成形絶縁体の製造方法について添付図面に示す好適な実施形態に基づいて詳細に説明する。 The three-dimensionally molded insulator and the method for manufacturing the three-dimensionally molded insulator according to the present invention will be described in detail below based on preferred embodiments shown in the accompanying drawings.

1.三次元成形絶縁体の概要
 図1は、実施形態に係る三次元成形絶縁体1および三次元成形絶縁体1が被せられる回路基板9を示す斜視図である。なお、図1では、三次元成形絶縁体1が回路基板9に被せられる前の状態を図示している。また、本願の各図では、互いに直交する3つの軸として、X軸、Y軸およびZ軸を設定しており、各軸を矢印で示している。また、矢印の基端側を各軸のマイナス側といい、先端側を各軸のプラス側という。さらに、Z軸プラス側を「上」、Z軸マイナス側を「下」ともいう。
1. Overview of Three-Dimensional Molded Insulator FIG. 1 is a perspective view showing a three-dimensionally shaped insulator 1 according to an embodiment and a circuit board 9 on which the three-dimensionally shaped insulator 1 is to be placed. Note that FIG. 1 illustrates the state before the three-dimensionally shaped insulator 1 is placed on the circuit board 9. In addition, in each drawing of the present application, three mutually orthogonal axes are set as an X-axis, a Y-axis, and a Z-axis, and each axis is indicated by an arrow. Furthermore, the base end side of the arrow is referred to as the negative side of each axis, and the tip end side is referred to as the positive side of each axis. Furthermore, the positive side of the Z-axis is referred to as "upper," and the negative side of the Z-axis is referred to as "lower."

 三次元成形絶縁体1は、図1に示すように、例えば、回路基板9に被せた状態で使用される。回路基板9は、図示しない配線を有する配線基板90と、パワー半導体素子91およびバスバー92と、信号用コネクター93と、固定ビス94と、を備える。このうち、パワー半導体素子91、バスバー92、信号用コネクター93および固定ビス94は、それぞれ、配線基板90の上面から上方に突出している。また、パワー半導体素子91およびバスバー92は、比較的高い電圧が印加された状態で使用される。印加される電圧は、例えば50V以上であり、好ましくは71V以上10kV以下である。このような回路基板9の上方から三次元成形絶縁体1を被せることにより、回路基板9とその上方に配置される図示しない他の物体との絶縁性を高めることができる。これにより、回路基板9と他の物体との絶縁に必要な空間距離を縮めることができる。 As shown in FIG. 1, the three-dimensional molded insulator 1 is used, for example, by covering a circuit board 9. The circuit board 9 includes a wiring board 90 having wiring (not shown), a power semiconductor element 91, a bus bar 92, a signal connector 93, and a fixing screw 94. Of these, the power semiconductor element 91, the bus bar 92, the signal connector 93, and the fixing screw 94 each protrude upward from the top surface of the wiring board 90. The power semiconductor element 91 and the bus bar 92 are used under a relatively high voltage. The applied voltage is, for example, 50 V or more, and preferably 71 V or more and 10 kV or less. By covering the circuit board 9 with the three-dimensional molded insulator 1 from above, the insulation between the circuit board 9 and other objects (not shown) placed above it can be improved. This reduces the spatial distance required for insulation between the circuit board 9 and other objects.

 また、三次元成形絶縁体1は、図1に示すように、凹部12を有する形状、より具体的には、平坦部11と凹部12とを有する形状に三次元成形されている。三次元成形とは、シート状の部材を、その部材の厚さよりも深い凹部を有する形状に成形することをいう。Z軸上から平面視したとき、絶縁シート1は、配線基板90と重なる外形サイズおよび外形形状を有する。平坦部11は、配線基板90の上面と平行な平坦面110を有する部位である。平坦面110とは、配線基板90の上面と対向する、平坦部11の下面である。なお、平行には、10度以下の角度ずれが許容される。凹部12は、平坦面110から上方に向かって凹んでいる部位である。平面視における凹部12の位置は、配線基板90に配置されているパワー半導体素子91、バスバー92および信号用コネクター93の位置に合わせてある。 Furthermore, as shown in FIG. 1, the three-dimensionally molded insulator 1 is three-dimensionally molded into a shape having a recess 12, more specifically, a shape having a flat portion 11 and a recess 12. Three-dimensional molding refers to molding a sheet-like member into a shape having a recess that is deeper than the thickness of the member. When viewed in a plan view from the Z axis, the insulating sheet 1 has an outer size and shape that overlaps with the wiring board 90. The flat portion 11 is a portion having a flat surface 110 that is parallel to the upper surface of the wiring board 90. The flat surface 110 is the lower surface of the flat portion 11 that faces the upper surface of the wiring board 90. Note that an angular deviation of 10 degrees or less is allowed in this parallelism. The recess 12 is a portion that is recessed upward from the flat surface 110. The position of the recess 12 in a plan view is aligned with the positions of the power semiconductor element 91, bus bar 92, and signal connector 93 arranged on the wiring board 90.

 回路基板9の上方から三次元成形絶縁体1を被せると、凹部12内にパワー半導体素子91、バスバー92および信号用コネクター93が挿入される。これにより、配線基板90の上面から突出するこれらの部品の上面および側面を三次元成形絶縁体1で覆うことができる。その結果、回路基板9と三次元成形絶縁体1との間には、最小限の隙間が生じるのみであり、従来よりもデッドスペースを縮小できる。つまり、パワー半導体素子91、バスバー92および信号用コネクター93のような電圧が印加される部品の周囲のデッドスペースを縮小できる。これにより、回路基板9が収容される空間を有効利用することが可能になる。 When the three-dimensional molded insulator 1 is placed over the circuit board 9, the power semiconductor element 91, bus bar 92, and signal connector 93 are inserted into the recess 12. This allows the top and side surfaces of these components that protrude from the top surface of the wiring board 90 to be covered with the three-dimensional molded insulator 1. As a result, only a minimal gap is created between the circuit board 9 and the three-dimensional molded insulator 1, reducing dead space compared to conventional methods. In other words, the dead space around components to which voltage is applied, such as the power semiconductor element 91, bus bar 92, and signal connector 93, can be reduced. This makes it possible to effectively utilize the space that houses the circuit board 9.

 したがって、三次元成形絶縁体1を用いることで、回路基板9を搭載する機器の小型化を図ることができる。なお、三次元成形絶縁体1の使用時の姿勢(鉛直上方に対する向き)は、上記に限定されない。例えば、上述した配線基板90の上面が下方を向いている場合には、三次元成形絶縁体1は、配線基板90の下方から被せられることになる。その場合、上記の凹部12は、平坦面110から下方に向かって凹んでいる部位となる。 Therefore, by using the three-dimensionally molded insulator 1, it is possible to miniaturize the equipment on which the circuit board 9 is mounted. Note that the orientation of the three-dimensionally molded insulator 1 when in use (its orientation relative to the vertically upward direction) is not limited to the above. For example, if the upper surface of the above-mentioned wiring board 90 faces downward, the three-dimensionally molded insulator 1 will be placed over the wiring board 90 from below. In this case, the above-mentioned recess 12 will be a portion that is recessed downward from the flat surface 110.

2.回路基板
 三次元成形絶縁体1の説明に先立ち、回路基板9について詳述する。回路基板9は、基板と、その表面から突出し、電圧が印加される部品と、を備える構成であれば、特に限定されない。
2. Circuit Board Prior to describing the three-dimensionally shaped insulator 1, a detailed description will be given of the circuit board 9. The circuit board 9 is not particularly limited as long as it has a configuration including a substrate and components that protrude from the surface of the substrate and to which a voltage is applied.

 図1に示す回路基板9は、前述したように、配線基板90と、パワー半導体素子91と、バスバー92と、信号用コネクター93と、固定ビス94と、を備える。
 図2は、図1に示す回路基板9のA-A線断面図である。
As described above, the circuit board 9 shown in FIG. 1 includes the wiring board 90, the power semiconductor element 91, the bus bar 92, the signal connector 93, and the fixing screw 94.
FIG. 2 is a cross-sectional view of the circuit board 9 shown in FIG. 1 taken along line AA.

 配線基板90は、図2に示すように、絶縁層901と、配線層902と、貫通配線903と、サーマルビア904と、を有する。 As shown in Figure 2, the wiring substrate 90 has an insulating layer 901, a wiring layer 902, through-hole wiring 903, and thermal vias 904.

 パワー半導体素子91は、大電力のスイッチング等を行う半導体素子である。パワー半導体素子91としては、例えば、IGBT(絶縁ゲート型バイポーラートランジスター)、パワーMOSFET(金属酸化膜半導体電界効果トランジスター)等が挙げられる。図1には、6つのパワー半導体素子91が図示されており、それぞれ、配線基板90の上面から上方に突出している。各パワー半導体素子91は、サーマルビア904に接触して放熱可能になっている。 The power semiconductor elements 91 are semiconductor elements that perform high-power switching and the like. Examples of power semiconductor elements 91 include IGBTs (insulated gate bipolar transistors) and power MOSFETs (metal-oxide semiconductor field-effect transistors). Figure 1 shows six power semiconductor elements 91, each protruding upward from the top surface of the wiring board 90. Each power semiconductor element 91 is in contact with a thermal via 904, allowing heat dissipation.

 バスバー92は、回路基板9と電源とを接続する導体である。バスバー92は、例えば金属製の板や棒で構成される。図2に示すバスバー92は、配線基板90の上面から上方に突出するとともに、途中で側方(X軸マイナス側)に屈曲している。バスバー92は、貫通配線903を介して配線基板90と電気的に接続されている。なお、図1に示すバスバー92は、流れる電流の向きが互いに異なるバスバー921、922を含んでいる。 The bus bar 92 is a conductor that connects the circuit board 9 and the power supply. The bus bar 92 is made of, for example, a metal plate or rod. The bus bar 92 shown in FIG. 2 protrudes upward from the top surface of the wiring board 90 and is bent sideways (towards the negative X-axis) midway. The bus bar 92 is electrically connected to the wiring board 90 via through-wires 903. The bus bar 92 shown in FIG. 1 includes bus bars 921 and 922, which have currents flowing in opposite directions.

 信号用コネクター93は、信号線が挿入されるコネクターである。信号線は、例えば、回路基板9と外部の制御装置との間で信号の送受信に用いられる。信号用コネクター93は、配線基板90の上面から上方に突出している。 The signal connector 93 is a connector into which a signal line is inserted. The signal line is used, for example, to send and receive signals between the circuit board 9 and an external control device. The signal connector 93 protrudes upward from the top surface of the wiring board 90.

 固定ビス94は、配線基板90の四隅を厚さ方向に貫通している。固定ビス94は、配線基板90を図示しないハウジング等に固定する。固定ビス94の頭部は、配線基板90の上面から上方に突出している。 The fixing screws 94 penetrate the four corners of the wiring board 90 in the thickness direction. The fixing screws 94 secure the wiring board 90 to a housing or the like (not shown). The heads of the fixing screws 94 protrude upward from the top surface of the wiring board 90.

 上記のような回路基板9では、パワー半導体素子91、バスバー92および信号用コネクター93に電圧が印加される。特にパワー半導体素子91やバスバー92には、高電圧が印加されるため、三次元成形絶縁体1による絶縁が有効である。 In the circuit board 9 described above, voltage is applied to the power semiconductor elements 91, bus bars 92, and signal connectors 93. Since high voltages are applied to the power semiconductor elements 91 and bus bars 92 in particular, insulation using the three-dimensional molded insulator 1 is effective.

 なお、電圧が印加される部品は、上記に限定されず、電圧が印加される部品であれば、いかなる部品であってもよい。上記以外の具体例としては、電池(バッテリー)、コンデンサー、ダイオード、コイル、抵抗、リレー、トランス、スイッチ、コネクター、端子等が挙げられる。 Note that the components to which voltage is applied are not limited to those listed above, and may be any component to which voltage is applied. Specific examples other than those listed above include batteries, capacitors, diodes, coils, resistors, relays, transformers, switches, connectors, terminals, etc.

 また、電圧が直接は印加されないものの、直接印加される部品と接触している部品も、意図せず電圧が印加される場合があるため、「電圧が印加される部品」に含まれるものとする。このような部品の具体例としては、ヒートシンク、ヒートスプレッダー、ヒートパイプ等が挙げられる。 In addition, even if a voltage is not directly applied to a component, components that are in contact with a component to which the voltage is directly applied may also be subject to the unintentional application of voltage, and are therefore considered to be included in the "components to which voltage is applied." Examples of such components include heat sinks, heat spreaders, and heat pipes.

3.三次元成形絶縁体の構成
 次に、三次元成形絶縁体1の構成について説明する。
3. Configuration of Three-Dimensional Molded Insulator Next, the configuration of the three-dimensionally molded insulator 1 will be described.

 3.1.三次元成形絶縁体の形状
 図1に示す三次元成形絶縁体1は、前述したように、配線基板90の上面から突出している部品に合わせて、複数の凹部12を有している。凹部12は、下方が開口している。三次元成形絶縁体1は、この開口部から各部品を挿入した状態で使用される。
3.1 Shape of the Three-Dimensional Molded Insulator As described above, the three-dimensionally molded insulator 1 shown in Fig. 1 has a plurality of recesses 12 that correspond to components protruding from the upper surface of the wiring board 90. The recesses 12 are open downward. The three-dimensionally molded insulator 1 is used with each component inserted through the openings.

 このような凹部12は、パワー半導体素子91が挿入される凹部121と、バスバー92が挿入される凹部122と、信号用コネクター93が挿入される凹部123と、を含む。凹部121、122、123は、それぞれ、挿入される部品の外形サイズ、外形形状に合わせて成形されている。このため、各部品と凹部121、122、123との隙間を最小化できる。これにより、デッドスペースの縮小を図ることができる。つまり、平面視における凹部121、122、123の面積を最小化できるため、その分、平坦部11の面積を最大化できる。これにより、従来の平板状の絶縁シートを用いる場合に比べて、平坦部11の上方のスペース(電圧が印加される部品の周囲のスペース)を有効利用できることになる。 Such recess 12 includes recess 121 into which power semiconductor element 91 is inserted, recess 122 into which bus bar 92 is inserted, and recess 123 into which signal connector 93 is inserted. Recesses 121, 122, and 123 are each molded to match the external size and shape of the inserted component. This minimizes the gap between each component and recess 121, 122, and 123, thereby reducing dead space. In other words, because the area of recesses 121, 122, and 123 in plan view can be minimized, the area of flat portion 11 can be maximized accordingly. This allows for more effective use of the space above flat portion 11 (the space around the component to which voltage is applied) than when using a conventional flat insulating sheet.

 また、凹部12は、各部品の上面だけでなく、側面も覆うことになる。これにより、各部品の側面に埃等の異物が付着したり、水分等が吸着したりするのを抑制できる。 Furthermore, the recesses 12 cover not only the top surfaces of each component but also the side surfaces. This prevents dust and other foreign matter from adhering to the side surfaces of each component, and prevents moisture and other substances from being adsorbed.

 さらに、各部品の側面には、端子等が露出している場合がある。凹部12は、このような端子等の絶縁にも有効に作用する。例えば、凹部12が設けられることにより、図2に示すバスバー92とパワー半導体素子91との絶縁に必要な空間距離L1(部品間の絶縁に必要な空間距離)の短縮が可能になる。これにより、回路基板9の小型化が可能になる。 Furthermore, terminals and the like may be exposed on the side of each component. The recess 12 also effectively insulates such terminals. For example, the provision of the recess 12 makes it possible to shorten the spatial distance L1 required for insulation between the bus bar 92 and the power semiconductor element 91 shown in Figure 2 (the spatial distance required for insulation between components). This makes it possible to reduce the size of the circuit board 9.

 図3は、図2の三次元成形絶縁体1のみを示す断面図である。
 図3に示す凹部12は、底部12aおよび壁部12bを含む。底部12aは、パワー半導体素子91やバスバー92の各上面を覆う部位である。壁部12bは、底部12aの端部から立ち下がる部位であって、パワー半導体素子91やバスバー92の各側面を覆う部位である。なお、底部12aおよび壁部12の各形状は、図3に示す形状に限定されない。また、底部12aと壁部12bとの接続部には、丸み(アール)が付けられていたり、面取りが施されていたりしてもよい。
FIG. 3 is a cross-sectional view showing only the three-dimensionally shaped insulator 1 of FIG.
The recess 12 shown in Fig. 3 includes a bottom 12a and wall portions 12b. The bottom 12a is a portion that covers the upper surfaces of the power semiconductor elements 91 and the bus bars 92. The wall portions 12b are portions that rise down from the end of the bottom 12a and cover the side surfaces of the power semiconductor elements 91 and the bus bars 92. The shapes of the bottom 12a and the wall portions 12 are not limited to the shapes shown in Fig. 3. The connection portion between the bottom 12a and the wall portions 12b may be rounded or chamfered.

 また、凹部12を適切なサイズや形状で成形することにより、図2に示す、凹部12の内側面とパワー半導体素子91等の部品との離間距離S2を十分に近づけることができる。これにより、デッドスペースをより効果的に縮小すること、および、各部品の側面を効果的に保護すること、が可能になる。 Furthermore, by molding the recess 12 to an appropriate size and shape, the separation distance S2 between the inner surface of the recess 12 and components such as the power semiconductor element 91, as shown in Figure 2, can be made sufficiently close. This makes it possible to more effectively reduce dead space and effectively protect the side surfaces of each component.

 離間距離S2は、特に限定されないが、10mm以下であることが好ましく、7mm以下であることより好ましく、5mm以下であることがさらに好ましい。これにより、デッドスペースを十分に縮小することができ、かつ、各部品をより効果的に保護できる。なお、三次元成形絶縁体1は、後述するように、耐トラッキング性が良好である。このため、離間距離S2が前記範囲内であっても、トラッキングが発生しにくい。一方、部品からの放熱効率や部品等へのストレス、組み立て容易性等を考慮した場合、離間距離S2は、0.5mm以上であることが好ましく、1mm以上であることがより好ましい。 The separation distance S2 is not particularly limited, but is preferably 10 mm or less, more preferably 7 mm or less, and even more preferably 5 mm or less. This allows dead space to be sufficiently reduced and each component to be protected more effectively. As will be described later, the three-dimensional molded insulator 1 has good tracking resistance. Therefore, even if the separation distance S2 is within the above range, tracking is unlikely to occur. On the other hand, when taking into consideration the efficiency of heat dissipation from the components, stress on the components, ease of assembly, etc., the separation distance S2 is preferably 0.5 mm or more, and more preferably 1 mm or more.

 また、図示しないが、凹部12の天井面とパワー半導体素子91等の部品との離間距離についても、上記の離間距離S2と同様である。 Furthermore, although not shown, the distance between the ceiling surface of the recess 12 and components such as the power semiconductor element 91 is the same as the above-mentioned distance S2.

 一方、凹部12を適切なサイズや形状で成形することにより、図2に示す、平坦部11の平坦面110と配線基板90との離間距離S1を十分に近づけることができる。また、離間距離S1が近くなることで、配線基板90の上面に埃等の異物が付着したり、水分等が吸着したりするのを抑制しやすくなる。これにより、バスバー92とパワー半導体素子91との間で生じる沿面放電やそれに続くトラッキングについても抑制しやすくなる。 On the other hand, by forming the recess 12 to an appropriate size and shape, the separation distance S1 between the flat surface 110 of the flat portion 11 and the wiring board 90, as shown in Figure 2, can be made sufficiently close. Furthermore, by reducing the separation distance S1, it becomes easier to prevent foreign matter such as dust from adhering to the upper surface of the wiring board 90, and moisture from being adsorbed. This also makes it easier to prevent creeping discharge and subsequent tracking that occurs between the bus bar 92 and the power semiconductor element 91.

 離間距離S1は、特に限定されないが、15mm以下であることが好ましく、10mm以下であることより好ましく、5mm以下であることがさらに好ましい。これにより、デッドスペースを十分に縮小できる。また、図2に示す例の場合、離間距離S1を前記範囲内にすることで、パワー半導体素子91とバスバー921との間に三次元成形絶縁体1が介在する確率が高くなるとともに、これらの間の配線基板90に対して三次元成形絶縁体1を十分に接近させることができる。これにより、これらの間で発生する沿面放電やトラッキングを抑制することができ、これらの間に必要とされる空間距離L1を十分に短縮することができる。 The separation distance S1 is not particularly limited, but is preferably 15 mm or less, more preferably 10 mm or less, and even more preferably 5 mm or less. This allows the dead space to be sufficiently reduced. Furthermore, in the example shown in Figure 2, by keeping the separation distance S1 within the above range, the probability of the three-dimensional molded insulator 1 being interposed between the power semiconductor element 91 and the bus bar 921 increases, and the three-dimensional molded insulator 1 can be brought sufficiently close to the wiring board 90 between them. This makes it possible to suppress creeping discharge and tracking that occur between them, and to sufficiently shorten the spatial distance L1 required between them.

 凹部12は、パワー半導体素子91が1つずつ挿入される凹部121を含む。このため、各パワー半導体素子91を個別に保護することができる。また、パワー半導体素子91同士の絶縁に必要な距離を短縮することができる。なお、凹部121には、2つ以上のパワー半導体素子91(部品)が挿入されるようになっていてもよい。 The recess 12 includes recesses 121 into which the power semiconductor elements 91 are inserted one by one. This allows each power semiconductor element 91 to be protected individually. It also reduces the distance required for insulation between the power semiconductor elements 91. Note that the recess 121 may be configured to accommodate the insertion of two or more power semiconductor elements 91 (components).

 凹部12は、バスバー921、922が1つずつ挿入される凹部122を含む。このため、バスバー921、922を個別に保護することができる。また、バスバー921、922同士の絶縁に必要な距離を短縮することができる。なお、凹部122には、2つ以上のバスバー92(部品)が挿入されるようになっていてもよい。 The recess 12 includes recesses 122 into which the bus bars 921, 922 are inserted one by one. This allows the bus bars 921, 922 to be protected individually. It also reduces the distance required for insulation between the bus bars 921, 922. Note that the recess 122 may be configured to accommodate the insertion of two or more bus bars 92 (components).

 また、図1に示す回路基板9では、バスバー921とバスバー922とがY軸に沿って並んでいる。これに対し、バスバー921、922が部分的にZ軸に沿って重なるように構成されていてもよい。 Furthermore, in the circuit board 9 shown in FIG. 1, the bus bars 921 and 922 are aligned along the Y axis. However, the bus bars 921 and 922 may be configured to partially overlap along the Z axis.

 図4は、図2の回路基板9の変形例を示す断面図である。
 図4では、バスバー921およびバスバー922が、部分的にZ軸に沿って重なっている。この部分では、プラス側の電流とマイナス側の電流が近接して流れることになる。このため、電流によって生じる磁束が互いに打ち消し合い、インダクタンス成分を低減させることができる。したがって、図4に示す構成では、バスバー92におけるインダクタンス成分の低減が図られた回路基板9を実現できる。これにより、回路基板9におけるサージ電圧の低減を図ることができる。
FIG. 4 is a cross-sectional view showing a modification of the circuit board 9 of FIG.
In FIG. 4 , bus bar 921 and bus bar 922 partially overlap along the Z axis. In this portion, positive and negative currents flow closely together. As a result, magnetic fluxes generated by the currents cancel each other out, reducing the inductance component. Therefore, the configuration shown in FIG. 4 can achieve a circuit board 9 with a reduced inductance component in bus bar 92. This can reduce surge voltages on circuit board 9.

 また、バスバー921とバスバー922との間には、三次元成形絶縁体1が介在している。これにより、バスバー921、922間を十分に近づけても、絶縁破壊等を防止できる。その結果、インダクタンス成分をより効果的に低減できる。 Furthermore, a three-dimensional molded insulator 1 is interposed between busbar 921 and busbar 922. This prevents dielectric breakdown and other problems even when busbars 921 and 922 are placed sufficiently close to each other. As a result, the inductance component can be reduced more effectively.

 さらに、図4の例では、バスバー921のX軸プラス側の側面と、図4には図示されていないY軸プラス側およびY軸マイナス側の各側面が、凹部122の内側面に覆われている。このため、バスバー921、922間を十分に近づけても、沿面放電を効果的に抑制できる。 Furthermore, in the example of Figure 4, the side surface of bus bar 921 on the positive side of the X axis and the side surfaces on the positive and negative sides of the Y axis (not shown in Figure 4) are covered by the inner surface of recess 122. Therefore, even if bus bars 921 and 922 are brought sufficiently close to each other, creeping discharge can be effectively suppressed.

 図5は、実施形態の変形例に係る三次元成形絶縁体1を示す上面図である。図6は、図5に示すバスバー92および三次元成形絶縁体1の断面図である。 Figure 5 is a top view showing a three-dimensionally molded insulator 1 according to a modified embodiment. Figure 6 is a cross-sectional view of the busbar 92 and three-dimensionally molded insulator 1 shown in Figure 5.

 図5に示す三次元成形絶縁体1は、図3に示す三次元成形絶縁体1の変形例であり、例えば、回路基板9から離れた位置に設けられる。具体的には、図4に示すバスバー921、922は、配線基板90からはみ出して、X軸マイナス側に延長されている場合がある。図5に示す三次元成形絶縁体1は、バスバー921、922の延長部において好適に用いられる。 The three-dimensionally molded insulator 1 shown in Figure 5 is a modified example of the three-dimensionally molded insulator 1 shown in Figure 3, and is provided, for example, at a position away from the circuit board 9. Specifically, the bus bars 921, 922 shown in Figure 4 may protrude from the wiring board 90 and extend toward the negative X-axis side. The three-dimensionally molded insulator 1 shown in Figure 5 is preferably used in the extended portions of the bus bars 921, 922.

 図5に示すバスバー921、922は、上記の延長部に相当する。延長部において、バスバー921、922は、Z軸に沿って互いに重なっている。そして、重なっている部分には、バスバー921とバスバー922との間に三次元成形絶縁体1の底部12aが配置されている。また、図5に示す三次元成形絶縁体1の壁部12bは、図6に示すように、底部12aの端部からZ軸プラス側に向かって立ち上がっている。これにより、バスバー922の側面が壁部12bで覆われる。 The bus bars 921 and 922 shown in Figure 5 correspond to the extensions described above. In the extensions, the bus bars 921 and 922 overlap each other along the Z axis. In the overlapping portion, the bottom 12a of the three-dimensionally shaped insulator 1 is positioned between the bus bars 921 and 922. In addition, the wall 12b of the three-dimensionally shaped insulator 1 shown in Figure 5 rises from the end of the bottom 12a toward the positive side of the Z axis, as shown in Figure 6. As a result, the side surface of the bus bar 922 is covered by the wall 12b.

 このような構成によれば、図5および図6に示す三次元成形絶縁体1によって、バスバー922の周囲のデッドスペースを縮小できる。つまり、壁部12bが設けられることにより、バスバー922の側方における絶縁空間距離を縮めることができるため、バスバー922の側方に任意の部材を配置することを許容できるようになる。これにより、従来であればデッドスペースになっていた空間を縮小することができる。 With this configuration, the three-dimensionally molded insulator 1 shown in Figures 5 and 6 can reduce the dead space around the bus bar 922. In other words, by providing the wall portion 12b, the insulating spatial distance on the sides of the bus bar 922 can be reduced, making it possible to place any component on the side of the bus bar 922. This makes it possible to reduce the space that would previously have been dead space.

 また、図5に示す三次元成形絶縁体1は、凹部12内にバスバー922が挿入された状態で用いられているため、バスバー922と三次元成形絶縁体1との位置ずれが抑制される。このため、振動等が加わっても、三次元成形絶縁体1の脱落等が発生するのを抑制できる。 Furthermore, because the three-dimensionally molded insulator 1 shown in Figure 5 is used with the bus bar 922 inserted into the recess 12, misalignment between the bus bar 922 and the three-dimensionally molded insulator 1 is suppressed. Therefore, even if vibrations or the like are applied, the three-dimensionally molded insulator 1 can be prevented from falling off or the like.

 また、図1に示す三次元成形絶縁体1は、平坦部11を厚さ方向に貫通する貫通孔13を有する。貫通孔13は、固定ビス94の位置に合わせて設けられている。貫通孔13を設けることにより、三次元成形絶縁体1を回路基板9に被せた状態でも、固定ビス94の回転操作が可能になる。このため、三次元成形絶縁体1を回路基板9に被せた状態で、回路基板9をケース等にビス止めすることが可能になり、組立作業性が向上する。なお、この場合、貫通孔13の内径は、固定ビス94の頭部の外径以上であることが好ましい。これにより、固定ビス94の回転操作が容易になる。 The three-dimensionally molded insulator 1 shown in Figure 1 also has a through hole 13 that penetrates the flat portion 11 in the thickness direction. The through hole 13 is provided to match the position of the fixing screw 94. By providing the through hole 13, the fixing screw 94 can be rotated even when the three-dimensionally molded insulator 1 is placed over the circuit board 9. This makes it possible to screw the circuit board 9 to a case or the like with the three-dimensionally molded insulator 1 placed over the circuit board 9, improving assembly workability. In this case, it is preferable that the inner diameter of the through hole 13 is equal to or greater than the outer diameter of the head of the fixing screw 94. This makes it easier to rotate the fixing screw 94.

 なお、固定ビス94を回路基板9に対して締めたとき、固定ビス94の頭部が三次元成形絶縁体1よりも上方に位置していてもよい。これにより、固定ビス94により、回路基板9とともに三次元成形絶縁体1を固定することができる。なお、この場合、貫通孔13の内径は、固定ビス94の頭部の外径未満であることが好ましい。 In addition, when the fixing screw 94 is tightened against the circuit board 9, the head of the fixing screw 94 may be positioned above the three-dimensionally shaped insulator 1. This allows the fixing screw 94 to fix the three-dimensionally shaped insulator 1 together with the circuit board 9. In this case, it is preferable that the inner diameter of the through hole 13 is smaller than the outer diameter of the head of the fixing screw 94.

 また、貫通孔13の平面視形状は、閉じた形状に限定されず、一部が外側に開いた形状であってもよい。 Furthermore, the planar shape of the through hole 13 is not limited to a closed shape, but may also be a shape with a portion open outward.

 三次元成形絶縁体1の平坦部11の厚さt11は、特に限定されないが、好ましくは0.05mm以上1.00mm以下とされ、より好ましくは0.10mm以上0.90mm以下とされ、さらに好ましくは0.20mm以上0.80mm以下とされる。これにより、難燃性、耐トラッキング性および絶縁性に優れるとともに、比較的製造しやすい三次元成形絶縁体1が得られる。なお、平坦部11の厚さt11が前記下限値を下回ると、難燃性、耐トラッキング性および絶縁性が低下するおそれがある。一方、平坦部11の厚さt11が前記上限値を上回ってもよいが、その場合、三次元成形絶縁体1が厚すぎて柔軟性が低下し、取り扱いが難しくなったり、放熱性や形状精度が低下したり、製造難易度が高くなったりするおそれがある。 The thickness t11 of the flat portion 11 of the three-dimensionally molded insulator 1 is not particularly limited, but is preferably 0.05 mm or more and 1.00 mm or less, more preferably 0.10 mm or more and 0.90 mm or less, and even more preferably 0.20 mm or more and 0.80 mm or less. This results in a three-dimensionally molded insulator 1 that is excellent in flame retardancy, tracking resistance, and insulation, and is relatively easy to manufacture. Note that if the thickness t11 of the flat portion 11 is below the lower limit, there is a risk of reduced flame retardancy, tracking resistance, and insulation. On the other hand, the thickness t11 of the flat portion 11 may exceed the upper limit, but in that case, the three-dimensionally molded insulator 1 may be too thick, reducing flexibility and making handling difficult, reducing heat dissipation and shape accuracy, and increasing the difficulty of manufacturing.

 また、壁部12bの厚さt12bは、平坦部11の厚さt11の20%以上95%以下であることが好ましく、30%以上90%以下であることがより好ましく、50%以上90%以下であることがさらに好ましい。壁部12bの厚さt12bが前記範囲内であれば、凹部12の形状を支えるのに十分な剛性を有するとともに、凹部12の側方においてデッドスペースをさらに縮小できる。 Furthermore, the thickness t12b of the wall portion 12b is preferably 20% to 95% of the thickness t11 of the flat portion 11, more preferably 30% to 90%, and even more preferably 50% to 90%. If the thickness t12b of the wall portion 12b is within this range, it will have sufficient rigidity to support the shape of the recess 12 and will further reduce the dead space on the sides of the recess 12.

 なお、壁部12bの厚さt12bが前記下限値を下回ると、壁部12bの剛性が不十分になるおそれがある。一方、壁部12bの厚さt12bが前記上限値を上回ると、凹部12の側方におけるデッドスペースの縮小効果が小さくなるおそれがある。 If the thickness t12b of the wall portion 12b is below the lower limit, the rigidity of the wall portion 12b may be insufficient. On the other hand, if the thickness t12b of the wall portion 12b exceeds the upper limit, the effect of reducing the dead space on the sides of the recess 12 may be reduced.

 なお、図1に示す三次元成形絶縁体1の外形形状は、一例として回路基板9全体と重なる形状であるが、これより小さくても大きくてもよい。 Note that the external shape of the three-dimensional molded insulator 1 shown in Figure 1 is, as an example, a shape that overlaps the entire circuit board 9, but it may be smaller or larger than this.

 また、凹部12は、例えば凹部121のように、配線基板90の上面から突出している部品の側面全体を覆うことが好ましいが、例えば凹部122、123のように部品の側面の一部を覆っていてもよい。 Furthermore, it is preferable that the recess 12, like recess 121, cover the entire side surface of the component protruding from the top surface of the wiring board 90, but it may also cover only part of the side surface of the component, like recesses 122 and 123, for example.

 凹部12の深さは、部品の高さに応じて設定されるため、特に限定されないが、0.5mm以上100mm以下であってもよく、1mm以上50mm以下であってもよい。このような範囲内であれば、製造容易性に優れ、かつ、高さの制限をほとんど伴うことなく様々な部品を挿入可能な凹部12を備える三次元成形絶縁体1を実現できる。 The depth of the recess 12 is set according to the height of the component, so is not particularly limited, but may be between 0.5 mm and 100 mm, or between 1 mm and 50 mm. Within these ranges, a three-dimensional molded insulator 1 can be realized that is easy to manufacture and has recesses 12 into which various components can be inserted with almost no height restrictions.

 3.2.三次元成形絶縁体の構成材料
 次に、三次元成形絶縁体1の構成材料について説明する。
3.2. Materials for Constituting the Three-Dimensional Molded Insulator Next, the materials for constituting the three-dimensionally molded insulator 1 will be described.

 三次元成形絶縁体1は、例えば樹脂材料を含む。三次元成形絶縁体1の構成材料における樹脂材料の割合は、60質量%以上であることが好ましく、70質量%以上であることがより好ましく、80質量%以上であることがさらに好ましい。これにより、絶縁性および成形性に優れ、かつ、軽量化が容易な三次元成形絶縁体1が得られる。 The three-dimensionally molded insulator 1 contains, for example, a resin material. The proportion of resin material in the constituent materials of the three-dimensionally molded insulator 1 is preferably 60% by mass or more, more preferably 70% by mass or more, and even more preferably 80% by mass or more. This results in a three-dimensionally molded insulator 1 that has excellent insulating properties and formability, and is easily lightweight.

 樹脂材料としては、例えば、ポリオレフィン樹脂、ポリアミド樹脂、ポリエステル樹脂、芳香族ポリカーボネート樹脂、脂肪族ポリカーボネート樹脂、ポリアリレート樹脂、ポリエチレンテレフタレート樹脂、ポリブチレンテレフタレート樹脂、ポリ乳酸、スチレン系共重合体、ポリアセタール樹脂、ポリフェニレンエーテル樹脂、ポリフェニレンスルフィド樹脂、ポリメタクリル酸メチル樹脂、セルロースエステル樹脂等の各種熱可塑性樹脂、ポリイミド、ポリウレタン、エポキシ樹脂、フェノール樹脂等の各種熱硬化性樹脂等が挙げられる。第1樹脂および第2樹脂には、これらの樹脂の1種または2種以上が組み合わされて用いられていてもよい。 Examples of resin materials include various thermoplastic resins such as polyolefin resin, polyamide resin, polyester resin, aromatic polycarbonate resin, aliphatic polycarbonate resin, polyarylate resin, polyethylene terephthalate resin, polybutylene terephthalate resin, polylactic acid, styrene copolymer, polyacetal resin, polyphenylene ether resin, polyphenylene sulfide resin, polymethyl methacrylate resin, and cellulose ester resin, as well as various thermosetting resins such as polyimide, polyurethane, epoxy resin, and phenolic resin. The first resin and the second resin may be a combination of one or more of these resins.

 また、三次元成形絶縁体1は、熱可塑性樹脂を主材料とすることが好ましい。主材料とは、上記割合であることをいう。熱可塑性樹脂を主材料とするシートは、熱による塑性変形が可能であり、二次加工性に優れる。このため、熱成形で製造可能であり、製造容易性に優れる三次元成形絶縁体1が得られる。 Furthermore, it is preferable that the three-dimensionally molded insulator 1 be primarily made of thermoplastic resin. "Main material" refers to the above-mentioned proportions. Sheets primarily made of thermoplastic resin are capable of plastic deformation due to heat, and have excellent secondary processability. For this reason, a three-dimensionally molded insulator 1 can be produced by thermoforming, resulting in a product that is easy to manufacture.

 熱可塑性樹脂としては、このうち、ポリオレフィン樹脂、ポリアミド樹脂、芳香族ポリカーボネート樹脂または脂肪族ポリカーボネート樹脂が好ましく用いられる。 Among these, polyolefin resins, polyamide resins, aromatic polycarbonate resins, and aliphatic polycarbonate resins are preferably used as thermoplastic resins.

 また、樹脂材料には、耐トラッキング性が高い材料が好ましく用いられる。耐トラッキング性は、絶縁物の表面で起きる放電により導電路(トラッキング)が形成される現象に対する耐性を指す。このような耐トラッキング性は、例えば、ASTM D3638に準拠して測定された耐トラッキング性の指標となる比較トラッキング指数CTIによって定量化できる。 Furthermore, resin materials with high tracking resistance are preferably used. Tracking resistance refers to resistance to the phenomenon in which a conductive path (tracking) is formed due to discharge that occurs on the surface of an insulator. Such tracking resistance can be quantified, for example, by the comparative tracking index (CTI), which is an indicator of tracking resistance measured in accordance with ASTM D3638.

 樹脂材料の比較トラッキング指数CTIは、400V以上であることが好ましく、600V以上であることがより好ましい。これにより、耐トラッキング性が特に良好な三次元成形絶縁体1が得られる。 The comparative tracking index CTI of the resin material is preferably 400 V or higher, and more preferably 600 V or higher. This results in a three-dimensional molded insulator 1 with particularly good tracking resistance.

 樹脂材料のガラス転移温度Tgは、125℃以上であることが好ましく、130℃以上200℃未満であることがより好ましい。これにより、樹脂材料に耐熱性が付与されるため、例えば三次元成形絶縁体1において沿面放電が生じた場合でも、炭化による着色を抑制しやすくなる。その結果、三次元成形絶縁体1における外観不良の発生や炭化に伴う絶縁性の低下を抑制できる。なお、樹脂材料のガラス転移温度Tgは、DSC(示差走査熱量計)法により測定される。DSC法における加熱速度は、10℃/分とする。 The glass transition temperature Tg of the resin material is preferably 125°C or higher, and more preferably 130°C or higher but lower than 200°C. This gives the resin material heat resistance, making it easier to suppress discoloration due to carbonization, even if creeping discharge occurs in the three-dimensional molded insulator 1. As a result, the occurrence of poor appearance in the three-dimensional molded insulator 1 and the deterioration of insulation properties due to carbonization can be suppressed. The glass transition temperature Tg of the resin material is measured using a differential scanning calorimeter (DSC) method. The heating rate in the DSC method is 10°C/min.

 樹脂材料の300℃、1.2kg荷重における各メルトボリュームレイト(MVR)は、5[cm/10min]以上30[cm/10min]以下であることが好ましく、8[cm/10min]以上20[cm/10min]以下であることがより好ましい。これにより、三次元成形絶縁体1の二次加工における成形性、特に真空成形において歪み等の不良を生じない特性を高めることができる。なお、メルトボリュームレイトが前記下限値を下回ると、流動性が不足し、成形性が低下するおそれがある。一方、メルトボリュームレイトが前記上限値を上回ると、成形体の耐衝撃性等が低下するおそれがある。なお、メルトボリュームレイトは、JIS K 7210:2014に規定の試験方法に準じて測定される。 The melt volume rate (MVR) of the resin material at 300°C and a load of 1.2 kg is preferably 5 cm 3 /10 min or more and 30 cm 3 /10 min or less, and more preferably 8 cm 3 /10 min or more and 20 cm 3 /10 min or less. This improves the moldability of the three-dimensionally molded insulator 1 during secondary processing, particularly the ability to prevent defects such as distortion during vacuum molding. If the melt volume rate is below the lower limit, the fluidity may be insufficient and moldability may be reduced. On the other hand, if the melt volume rate is above the upper limit, the impact resistance of the molded body may be reduced. The melt volume rate is measured in accordance with the test method specified in JIS K 7210:2014.

  3.2.1.ポリオレフィン樹脂
 ポリオレフィン樹脂としては、高密度ポリエチレン樹脂、ポリプロピレン樹脂、ポリブテン樹脂、エチレン-(メタ)アクリル酸共重合体、エチレン-(メタ)アクリル酸メチル共重合体、エチレン-(メタ)アクリル酸エチル共重合体、エチレン-酢酸ビニル共重合体、無水マレイン酸変性ポリエチレン、カルボン酸変性ポリエチレン、エチレン-プロピレン共重合体、エチレン-プロピレン-ジエン共重合体等が挙げられる。
3.2.1 Polyolefin Resin Examples of polyolefin resins include high-density polyethylene resin, polypropylene resin, polybutene resin, ethylene-(meth)acrylic acid copolymer, ethylene-methyl (meth)acrylate copolymer, ethylene-ethyl (meth)acrylate copolymer, ethylene-vinyl acetate copolymer, maleic anhydride-modified polyethylene, carboxylic acid-modified polyethylene, ethylene-propylene copolymer, and ethylene-propylene-diene copolymer.

 ポリオレフィン樹脂は、様々な薬品に対する耐薬品性に優れる。また、ポリオレフィン樹脂は、炭化水素の鎖状構造に基づく良好な耐トラッキング性を有する。このため、ポリオレフィン樹脂は、三次元成形絶縁体1の耐薬品性および耐トラッキング性の向上に寄与する。 Polyolefin resins have excellent chemical resistance to a variety of chemicals. Furthermore, polyolefin resins have good tracking resistance due to their hydrocarbon chain structure. Therefore, polyolefin resins contribute to improving the chemical resistance and tracking resistance of the three-dimensional molded insulator 1.

 このうち、ポリプロピレン樹脂が好ましく用いられる。ポリプロピレン樹脂は、三次元成形絶縁体1の耐薬品性および耐トラッキング性を特に向上させる。 Among these, polypropylene resin is preferably used. Polypropylene resin particularly improves the chemical resistance and tracking resistance of the three-dimensional molded insulator 1.

  3.2.2.ポリアミド樹脂
 ポリアミド樹脂としては、例えば、ポリカプロアミド(ポリアミド6)、ポリテトラメチレンアジパミド(ポリアミド46)、ポリヘキサメチレンアジパミド(ポリアミド66)、ポリヘキサメチレンセバカミド(ポリアミド610)、ポリヘキサメチレンドデカミド(ポリアミド612)、ポリウンデカメチレンアジパミド(ポリアミド116)、ポリウンデカンアミド(ポリアミド11)、ポリドデカンアミド(ポリアミド12)、ポリトリメチルヘキサメチレンテレフタルアミド(ポリアミドTMHT)、ポリヘキサメチレンテレフタルアミド(ポリアミド6T)、ポリヘキサメチレンイソフタルアミド(ポリアミド6I)、ポリヘキサメチレンテレフタル/イソフタルアミド(ポリアミド6T/6I)、ポリビス(4-アミノシクロヘキシル)メタンドデカミド(ポリアミドPACM12)、ポリビス(3-メチル-4-アミノシクロヘキシル)メタンドデカミド(ポリアミドジメチルPACM12)、ポリメタキシリレンアジパミド(ポリアミドMXD6)、ポリノナメチレンテレフタルアミド(ポリアミド9T)、ポリデカメチレンテレフタルアミド(ポリアミド10T)、ポリウンデカメチレンテレフタルアミド(ポリアミド11T)、ポリウンデカメチレンヘキサヒドロテレフタルアミド(ポリアミド11T(H))が挙げられ、これらの共重合体や混合物であってもよい。
3.2.2. Polyamide Resin Examples of polyamide resins include polycaproamide (polyamide 6), polytetramethylene adipamide (polyamide 46), polyhexamethylene adipamide (polyamide 66), polyhexamethylene sebacamide (polyamide 610), polyhexamethylene dodecamide (polyamide 612), polyundecamethylene adipamide (polyamide 116), polyundecaneamide (polyamide 11), polydodecanamide (polyamide 12), polytrimethylhexamethylene terephthalamide (polyamide TMHT), polyhexamethylene terephthalamide (polyamide 6T), polyhexamethylene isophthalamide (polyamide 6I), and polyhexamethylene sebacamide (polyamide 610). Examples of the polyisopropylamine include ethylene terephthalic/isophthalamide (polyamide 6T/6I), polybis(4-aminocyclohexyl)methanedodecamide (polyamide PACM12), polybis(3-methyl-4-aminocyclohexyl)methanedodecamide (polyamide dimethyl PACM12), polymetaxylylene adipamide (polyamide MXD6), polynonamethylene terephthalamide (polyamide 9T), polydecamethylene terephthalamide (polyamide 10T), polyundecamethylene terephthalamide (polyamide 11T), and polyundecamethylene hexahydroterephthalamide (polyamide 11T(H)), and copolymers or mixtures thereof may also be used.

 ポリアミド樹脂は、例えば、ジアミンとジカルボン酸とからなるナイロン塩を原料として、溶融重合、溶液重合、固相重合等の公知の方法で重合または共重合することにより得られる。第1樹脂および第2樹脂としてポリアミド樹脂を用いることにより、三次元成形絶縁体1の耐トラッキング性をより高めることができる。 Polyamide resin can be obtained by polymerizing or copolymerizing nylon salts, which are made from diamines and dicarboxylic acids, using known methods such as melt polymerization, solution polymerization, and solid-state polymerization. Using polyamide resins as the first and second resins can further improve the tracking resistance of the three-dimensionally molded insulator 1.

 ジアミンとしては、脂肪族ジアミンであってもよいが、脂環式ジアミンまたは芳香族ジアミンが好ましく用いられ、脂環式ジアミンがより好ましく用いられる。これらを用いることにより、芳香環構造や脂環構造のような環状構造を有するポリアミド樹脂を調製することができる。このようなポリアミド樹脂は、三次元成形絶縁体1の耐熱性を向上させることに寄与する。また、特に脂環式ジアミンは、三次元成形絶縁体1の耐トラッキング性を向上させることに寄与する。 The diamine may be an aliphatic diamine, but alicyclic diamines or aromatic diamines are preferably used, with alicyclic diamines being more preferred. By using these, it is possible to prepare polyamide resins having a cyclic structure such as an aromatic ring structure or an alicyclic structure. Such polyamide resins contribute to improving the heat resistance of the three-dimensionally molded insulator 1. Furthermore, alicyclic diamines in particular contribute to improving the tracking resistance of the three-dimensionally molded insulator 1.

 脂環式ジアミンとしては、例えば、1,3-シクロヘキサンジアミン、1,4-シクロヘキサンジアミン、1,3-シクロヘキサンジメチルアミン、1,4-シクロヘキサンジメチルアミン、ビス(4-アミノシクロヘキシル)メタン、ビス(4-アミノシクロヘキシル)プロパン、ビス(3-メチル-4-アミノシクロヘキシル)メタン、ビス(3-メチル-4-アミノシクロヘキシル)プロパン、5-アミノ-2,2,4-トリメチル-1-シクロペンタンメチルアミン、5-アミノ-1,3,3-トリメチルシクロヘキサンメチルアミン(イソホロンジアミン)、ビス(アミノプロピル)ピペラジン、ビス(アミノエチル)ピペラジン、ノルボルナンジメチルアミン、トリシクロデカンジメチルアミン等が挙げられ、これらのうちの1種または2種以上が用いられる。 Examples of alicyclic diamines include 1,3-cyclohexanediamine, 1,4-cyclohexanediamine, 1,3-cyclohexanedimethylamine, 1,4-cyclohexanedimethylamine, bis(4-aminocyclohexyl)methane, bis(4-aminocyclohexyl)propane, bis(3-methyl-4-aminocyclohexyl)methane, bis(3-methyl-4-aminocyclohexyl)propane, 5-amino-2,2,4-trimethyl-1-cyclopentanemethylamine, 5-amino-1,3,3-trimethylcyclohexanemethylamine (isophoronediamine), bis(aminopropyl)piperazine, bis(aminoethyl)piperazine, norbornanedimethylamine, and tricyclodecanedimethylamine, and one or more of these may be used.

 芳香族ジアミンとしては、例えば、m-キシリレンジアミン、p-キシリレンジアミン等が挙げられる。 Examples of aromatic diamines include m-xylylenediamine and p-xylylenediamine.

 ジカルボン酸としては、脂環式ジカルボン酸または芳香族ジカルボン酸であってもよいが、脂肪族ジカルボン酸が好ましく用いられる。これにより、炭化水素の鎖状構造を有するポリアミド樹脂を調製することができる。このようなポリアミド樹脂は、三次元成形絶縁体1の耐トラッキング性を向上させることに寄与する。 The dicarboxylic acid may be an alicyclic dicarboxylic acid or an aromatic dicarboxylic acid, but an aliphatic dicarboxylic acid is preferably used. This allows the preparation of a polyamide resin with a hydrocarbon chain structure. Such a polyamide resin contributes to improving the tracking resistance of the three-dimensionally molded insulator 1.

 ジカルボン酸としては、例えば、アジピン酸、ピメリン酸、スベリン酸、アゼライン酸、セバシン酸、ウンデカン二酸、ドデカン二酸、トリデカン二酸、テトラデカン二酸、ペンタデカン二酸、ヘキサデカン二酸、オクタデカン二酸、エイコサン二酸のような脂肪族ジカルボン酸;1,3-シクロヘキサンジカルボン酸、1,4-シクロヘキサンジカルボン酸、ジシクロヘキサンメタン-4,4’-ジカルボン酸、ノルボルナンジカルボン酸のような脂環式ジカルボン酸;イソフタル酸、テレフタル酸、1,4-ナフタレンジカルボン酸、2,6-ナフタレンジカルボン酸、2,7-ナフタレンジカルボン酸のような芳香族ジカルボン酸等が挙げられ、これらのうちの1種または2種以上が用いられる。 Dicarboxylic acids include, for example, aliphatic dicarboxylic acids such as adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid, dodecanedioic acid, tridecanedioic acid, tetradecanedioic acid, pentadecanedioic acid, hexadecanedioic acid, octadecanedioic acid, and eicosanedioic acid; alicyclic dicarboxylic acids such as 1,3-cyclohexanedicarboxylic acid, 1,4-cyclohexanedicarboxylic acid, dicyclohexanemethane-4,4'-dicarboxylic acid, and norbornanedicarboxylic acid; and aromatic dicarboxylic acids such as isophthalic acid, terephthalic acid, 1,4-naphthalenedicarboxylic acid, 2,6-naphthalenedicarboxylic acid, and 2,7-naphthalenedicarboxylic acid. One or more of these may be used.

 ポリアミド樹脂には、ポリアミド6T、ポリアミドPACM12、ポリアミドジメチルPACM12、ポリアミドMXD6、ポリアミド9T、ポリアミド10T、ポリアミド11T、または、ポリアミド11T(H)が好ましく用いられ、ポリアミドPACM12、または、ポリアミドジメチルPACM12がより好ましく用いられる。これらは、芳香環構造や脂環構造のような環状構造、および、脂肪族モノマーに由来する構造、の双方を有することから、三次元成形絶縁体1の耐熱性および耐トラッキング性の双方を向上させることに寄与する。
 ポリアミドPACM12は、下記式(2)で表される構造単位を含む。
The polyamide resin preferably used is polyamide 6T, polyamide PACM12, polyamide dimethyl PACM12, polyamide MXD6, polyamide 9T, polyamide 10T, polyamide 11T, or polyamide 11T(H), and more preferably polyamide PACM12 or polyamide dimethyl PACM12. These have both a cyclic structure such as an aromatic ring structure or an alicyclic structure, and a structure derived from an aliphatic monomer, and therefore contribute to improving both the heat resistance and tracking resistance of the three-dimensionally molded insulator 1.
Polyamide PACM12 contains a structural unit represented by the following formula (2).

 上記のポリアミドPACM12は、ビス(4-アミノシクロヘキシル)メタン(PACM)およびドデカン二酸を原料として合成される。
 ポリアミドジメチルPACM12は、下記式(3)で表される構造単位を含む。
The polyamide PACM12 is synthesized from bis(4-aminocyclohexyl)methane (PACM) and dodecanedioic acid.
Polyamide dimethyl PACM12 contains a structural unit represented by the following formula (3).

 上記のポリアミドジメチルPACM12は、ビス(3-メチル-4-アミノシクロヘキシル)メタン(MACM)およびドデカン二酸を原料として合成される。 The above-mentioned polyamide dimethyl PACM12 is synthesized using bis(3-methyl-4-aminocyclohexyl)methane (MACM) and dodecanedioic acid as raw materials.

  3.2.3.脂肪族ポリカーボネート樹脂
 脂肪族ポリカーボネート樹脂としては、例えば、炭素数が2~12の脂肪族カーボネート単位を含む樹脂が挙げられる。具体的には、例えば、ポリエチレンカーボネート、ポリプロピレンカーボネート、ポリトリメチレンカーボネート、ポリテトラメチレンカーボネート、ポリペンタメチレンカーボネート、ポリヘキサメチレンカーボネート、ポリヘプタメチレンカーボネート、ポリオクタメチレンカーボネート、ポリノナメチレンカーボネート、ポリデカメチレンカーボネート、ポリオキシジエチレンカーボネート、ポリ-3,6-ジオキシオクタンカーボネート、ポリ-3,6,9-トリオキシウンデカンカーボネート、ポリオキシジプロピレンカーボネート、ポリシクロペンテンカーボネート、ポリシクロヘキセンカーボネート等が挙げられる。
3.2.3 Aliphatic Polycarbonate Resins Examples of aliphatic polycarbonate resins include resins containing aliphatic carbonate units having 2 to 12 carbon atoms. Specific examples include polyethylene carbonate, polypropylene carbonate, polytrimethylene carbonate, polytetramethylene carbonate, polypentamethylene carbonate, polyhexamethylene carbonate, polyheptamethylene carbonate, polyoctamethylene carbonate, polynonamemethylene carbonate, polydecamethylene carbonate, polyoxydiethylene carbonate, poly-3,6-dioxyoctane carbonate, poly-3,6,9-trioxyundecane carbonate, polyoxydipropylene carbonate, polycyclopentene carbonate, and polycyclohexene carbonate.

 また、脂肪族ポリカーボネート樹脂は、下記式(4)で表されるジオール残基を含有する脂肪族カーボネート単位を含む樹脂であってもよい。 The aliphatic polycarbonate resin may also be a resin containing aliphatic carbonate units containing a diol residue represented by the following formula (4):

(式(4)中、R~Rは、それぞれ独立して、水素原子、アルキル基、シクロアルキル基またはアリール基である。) (In formula (4), R 5 to R 8 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, or an aryl group.)

 脂肪族ポリカーボネート樹脂は、全構造単位中、上記式(4)で表されるジオール残基を含有する脂肪族カーボネート単位を30モル%以上100モル%以下含むことが好ましく、50モル%以上90モル%以下含むことがより好ましい。 Aliphatic polycarbonate resins preferably contain 30 mol% to 100 mol% of aliphatic carbonate units containing a diol residue represented by formula (4) above, and more preferably 50 mol% to 90 mol% of all structural units.

 上記式(4)で表されるジオール残基は、2つのテトラヒドロフラン環が縮環した構造を持っている。このような構造を構造単位中に含むことで、脂肪族ポリカーボネート樹脂のガラス転移温度Tgを高めることができる。その結果、耐熱性および耐トラッキング性に優れる三次元成形絶縁体1が得られる。 The diol residue represented by the above formula (4) has a structure in which two tetrahydrofuran rings are fused together. By including such a structure in the structural unit, the glass transition temperature Tg of the aliphatic polycarbonate resin can be increased. As a result, a three-dimensional molded insulator 1 with excellent heat resistance and tracking resistance can be obtained.

 上記式(4)で表されるジオール残基を構成するジオールとしては、例えば、イソソルビド、イソマンニド、イソイディッド等が挙げられる。これら糖質由来のジオールは、自然界のバイオマスからも得られる物質であるという点で有用である。 Examples of diols that constitute the diol residue represented by formula (4) above include isosorbide, isomannide, and isoidide. These carbohydrate-derived diols are useful in that they can also be obtained from natural biomass.

  3.2.4.芳香族ポリカーボネート樹脂
 芳香族ポリカーボネート樹脂は、種々のジヒドロキシジアリール化合物とホスゲンとを反応させるホスゲン法、ジヒドロキシジアリール化合物とジフェニルカーボネートのような炭酸エステルとを反応させるエステル交換法、環状カーボネート化合物の開環重合法、界面重縮合法等により得られる。このような芳香族ポリカーボネート樹脂は、芳香環構造に由来する優れた耐熱性および難燃性を三次元成形絶縁体1に付与する。
3.2.4 Aromatic Polycarbonate Resin Aromatic polycarbonate resins can be obtained by methods such as the phosgene process in which various dihydroxydiaryl compounds are reacted with phosgene, the transesterification process in which a dihydroxydiaryl compound is reacted with a carbonate ester such as diphenyl carbonate, the ring-opening polymerization of a cyclic carbonate compound, or the interfacial polycondensation process. Such aromatic polycarbonate resins impart excellent heat resistance and flame retardancy to the three-dimensionally molded insulator 1 due to their aromatic ring structure.

 ジヒドロキシジアリール化合物としては、ビスフェノールAの他に、ビス(4-ヒドロキシフェニル)メタン、1,1-ビス(4-ヒドロキシフェニル)エタン、2,2-ビス(4-ヒドロキシフェニル)ブタン、2,2-ビス(4-ヒドロキシフェニル)オクタン、ビス(4-ヒドロキシフェニル)フェニルメタン、2,2-ビス(4-ヒドロキシフェニル-3-メチルフェニル)プロパン、1,1-ビス(4-ヒドロキシ-3-第三ブチルフェニル)プロパンのようなビス(ヒドロキシアリール)アルカン類、1,1-ビス(4-ヒドロキシフェニル)シクロペンタン、1,1-ビス(4-ヒドロキシフェニル)シクロヘキサンのようなビス(ヒドロキシアリール)シクロアルカン類、4,4’-ジヒドロキシジフェニルエーテル、4,4’-ジヒドロキシ-3,3’-ジメチルジフェニルエーテルのようなジヒドロキシジアリールエーテル類、4,4’-ジヒドロキシジフェニルスルフィド、4,4’-ジヒドロキシ-3,3’-ジメチルジフェニルスルフィドのようなジヒドロキシジアリールスルフィド類、4,4’-ジヒドロキシジフェニルスルホキシド、4,4’-ジヒドロキシ-3,3’-ジメチルジフェニルスルホキシドのようなジヒドロキシジアリールスルホキシド類、4,4’-ジヒドロキシジフェニルスルホン、4,4’-ジヒドロキシ-3,3’-ジメチルジフェニルスルホンのようなジヒドロキシジアリールスルホン類等が挙げられる。これらは単独だけでなく2種以上を混合して使用されてもよい。 In addition to bisphenol A, dihydroxydiaryl compounds include bis(hydroxyaryl)alkanes such as bis(4-hydroxyphenyl)methane, 1,1-bis(4-hydroxyphenyl)ethane, 2,2-bis(4-hydroxyphenyl)butane, 2,2-bis(4-hydroxyphenyl)octane, bis(4-hydroxyphenyl)phenylmethane, 2,2-bis(4-hydroxyphenyl-3-methylphenyl)propane, and 1,1-bis(4-hydroxy-3-tert-butylphenyl)propane, and bis(hydroxyaryl)cycloalkanes such as 1,1-bis(4-hydroxyphenyl)cyclopentane and 1,1-bis(4-hydroxyphenyl)cyclohexane. Examples include ketones, dihydroxydiaryl ethers such as 4,4'-dihydroxydiphenyl ether and 4,4'-dihydroxy-3,3'-dimethyldiphenyl ether, dihydroxydiaryl sulfides such as 4,4'-dihydroxydiphenyl sulfide and 4,4'-dihydroxy-3,3'-dimethyldiphenyl sulfide, dihydroxydiaryl sulfoxides such as 4,4'-dihydroxydiphenyl sulfoxide and 4,4'-dihydroxy-3,3'-dimethyldiphenyl sulfoxide, and dihydroxydiaryl sulfones such as 4,4'-dihydroxydiphenyl sulfone and 4,4'-dihydroxy-3,3'-dimethyldiphenyl sulfone. These may be used alone or in combination of two or more.

 芳香族ポリカーボネート樹脂としては、特に、下記式(1)で表される構造単位を有する樹脂が挙げられる。 Aromatic polycarbonate resins include, in particular, resins having structural units represented by the following formula (1):

(式(1)中、RおよびRは、独立して、水素原子、炭素数1~6のアルキル基、炭素数5~7のシクロアルキル基、炭素数6~12のアリール基、または、ハロゲン原子を表す。mおよびnは、独立して、0~4の整数を表す。Xは、直接結合、O、S、SO、SO、CR(RおよびRは、独立して、水素原子、炭素数1~6のアルキル基または炭素数6~12のアリール基を表し、互いに同一でも異なっていてもよい。)、炭素数2~10のアルキレン基、ポリジメチルシロキサン基、または、C(CFを表す。) (In formula (1), R1 and R2 independently represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 5 to 7 carbon atoms, an aryl group having 6 to 12 carbon atoms, or a halogen atom. m and n independently represent an integer of 0 to 4. X represents a direct bond, O, S, SO, SO2 , CR3R4 ( R3 and R4 independently represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 12 carbon atoms, and may be the same or different), an alkylene group having 2 to 10 carbon atoms, a polydimethylsiloxane group, or C( CF3 ) 2 .)

 上記式(1)で表される構造単位を有する芳香族ポリカーボネート樹脂は、特に優れた耐熱性および難燃性を三次元成形絶縁体1に付与する。 Aromatic polycarbonate resins having structural units represented by the above formula (1) impart particularly excellent heat resistance and flame retardancy to the three-dimensionally molded insulator 1.

 芳香族ポリカーボネート樹脂を構成する全構造単位のうち、上記式(1)で表される構造単位の割合は、55モル%以上であることが好ましく、70モル%以上であることがより好ましく、80モル%以上であることがさらに好ましい。 Among all the structural units constituting the aromatic polycarbonate resin, the proportion of structural units represented by the above formula (1) is preferably 55 mol% or more, more preferably 70 mol% or more, and even more preferably 80 mol% or more.

 また、入手の容易さ、コスト等の観点から、RおよびRが、それぞれ水素原子であることが好ましく、Xが、CRであり、かつ、RおよびRがそれぞれメチル基または水素原子であることが好ましい。 From the viewpoints of availability, cost, etc., it is preferable that R 1 and R 2 are each a hydrogen atom, X is CR 3 R 4 , and R 3 and R 4 are each a methyl group or a hydrogen atom.

 芳香族ポリカーボネート樹脂は、ビスフェノールA(2,2-ビス(4-ヒドロキシフェニル)プロパン)から誘導される構造単位を有するポリカーボネート樹脂であることが好ましい。これにより、三次元成形絶縁体1の難燃性および耐熱性をさらに高めることができる。 The aromatic polycarbonate resin is preferably a polycarbonate resin having structural units derived from bisphenol A (2,2-bis(4-hydroxyphenyl)propane). This further enhances the flame retardancy and heat resistance of the three-dimensional molded insulator 1.

 芳香族ポリカーボネート樹脂の粘度平均分子量(M)は、特に限定されないが、好ましくは5000以上100000以下とされ、より好ましくは12000以上35000以下とされ、さらに好ましくは15000以上30000以下とされ、特に好ましくは18000以上28000以下とされる。 The viscosity average molecular weight (M) of the aromatic polycarbonate resin is not particularly limited, but is preferably 5,000 or more and 100,000 or less, more preferably 12,000 or more and 35,000 or less, even more preferably 15,000 or more and 30,000 or less, and particularly preferably 18,000 or more and 28,000 or less.

 粘度平均分子量(M)は、樹脂のメチレンクロライド溶液の粘度(η)から、η=kMαの式を利用して算出される。kおよびαは、高分子に固有の定数である。粘度の測定には、ウベローデ粘度計が用いられ、20℃で測定される。 The viscosity average molecular weight (M) is calculated from the viscosity (η) of a methylene chloride solution of the resin using the formula η = kM α , where k and α are constants specific to the polymer. The viscosity is measured using an Ubbelohde viscometer at 20°C.

 また、芳香族ポリカーボネート樹脂は、粘度平均分子量が高い樹脂(高粘度樹脂)と、粘度平均分子量が低い樹脂(低粘度樹脂)と、のブレンド体であってもよい。これにより、芳香族ポリカーボネート樹脂が持つ耐熱性や難燃性を損なうことなく、成形性に優れる三次元成形絶縁体1が得られる。 Furthermore, the aromatic polycarbonate resin may be a blend of a resin with a high viscosity average molecular weight (high viscosity resin) and a resin with a low viscosity average molecular weight (low viscosity resin). This allows for the production of a three-dimensional molded insulator 1 with excellent moldability without compromising the heat resistance and flame retardancy inherent to the aromatic polycarbonate resin.

 高粘度樹脂の粘度平均分子量と、低粘度樹脂の粘度平均分子量と、の差は、特に限定されないが、3000以上20000以下であることが好ましく、5000以上10000以下であることがより好ましい。これにより、成形性が特に良好な三次元成形絶縁体1が得られる。 The difference between the viscosity average molecular weight of the high-viscosity resin and the viscosity average molecular weight of the low-viscosity resin is not particularly limited, but is preferably between 3,000 and 20,000, and more preferably between 5,000 and 10,000. This results in a three-dimensional molded insulator 1 with particularly good moldability.

 高粘度樹脂の配合量をM1とし、低粘度樹脂の配合量をM2とするとき、配合比M1/M2は、質量比で0.5以上8.0以下であることが好ましく、0.8以上6.0以下であることがより好ましく、0.9以上5.0以下であることがさらに好ましい。これにより、成形性が特に良好な三次元成形絶縁体1が得られる。 When the blending amount of high-viscosity resin is M1 and the blending amount of low-viscosity resin is M2, the blending ratio M1/M2 is preferably 0.5 or more and 8.0 or less by mass, more preferably 0.8 or more and 6.0 or less, and even more preferably 0.9 or more and 5.0 or less. This results in a three-dimensional molded insulator 1 with particularly good moldability.

 芳香族ポリカーボネート樹脂のガラス転移温度Tgは、130℃以上160℃未満であることが好ましく、140℃以上155℃以下であることがより好ましい。芳香族ポリカーボネート樹脂のガラス転移温度Tgが前記範囲内であれば、三次元成形絶縁体1の耐熱性および難燃性を十分に高められる。なお、芳香族ポリカーボネート樹脂のガラス転移温度Tgは、DSC(示差走査熱量計)法により測定される。DSC法における加熱速度は、10℃/分とする。 The glass transition temperature Tg of the aromatic polycarbonate resin is preferably 130°C or higher and lower than 160°C, and more preferably 140°C or higher and 155°C or lower. If the glass transition temperature Tg of the aromatic polycarbonate resin is within this range, the heat resistance and flame retardancy of the three-dimensional molded insulator 1 can be sufficiently improved. The glass transition temperature Tg of the aromatic polycarbonate resin is measured by DSC (differential scanning calorimetry). The heating rate in the DSC method is 10°C/min.

 三次元成形絶縁体1における芳香族ポリカーボネート樹脂の含有率は、特に限定されないが、70質量%以上であることが好ましく、80質量%以上であることがより好ましい。 The content of aromatic polycarbonate resin in the three-dimensional molded insulator 1 is not particularly limited, but is preferably 70% by mass or more, and more preferably 80% by mass or more.

 芳香族ポリカーボネート樹脂の300℃、1.2kg荷重におけるメルトボリュームレイト(MVR)は、5[cm/10min]以上20[cm/10min]以下であることが好ましく、8[cm/10min]以上15[cm/10min]以下であることがより好ましい。これにより、三次元成形絶縁体1の二次加工における成形性、特に真空成形において歪み等の不良を生じない特性を高めることができる。なお、メルトボリュームレイトが前記下限値を下回ると、流動性が不足し、成形性が低下するおそれがある。一方、メルトボリュームレイトが前記上限値を上回ると、成形体の耐衝撃性等が低下するおそれがある。なお、メルトボリュームレイトは、JIS K 7210:2014に規定の試験方法に準じて測定される。 The melt volume rate (MVR) of the aromatic polycarbonate resin at 300°C and a load of 1.2 kg is preferably 5 cm 3 /10 min or more and 20 cm 3 /10 min or less, and more preferably 8 cm 3 /10 min or more and 15 cm 3 /10 min or less. This improves the moldability of the three-dimensionally molded insulator 1 during secondary processing, particularly the ability to prevent defects such as distortion during vacuum molding. If the melt volume rate is below the lower limit, the fluidity may be insufficient and moldability may be reduced. On the other hand, if the melt volume rate is above the upper limit, the impact resistance of the molded body may be reduced. The melt volume rate is measured in accordance with the test method specified in JIS K 7210:2014.

 芳香族ポリカーボネート樹脂は、下記式(5)で表されるカーボネート単位(ビスフェノールイソホロンカーボネート単位)を含む樹脂であってもよい。このような芳香族ポリカーボネート樹脂は、上記式(1)で表されるカーボネート単位を含む芳香族ポリカーボネート樹脂よりも耐熱性が高い。以下、ビスフェノールイソホロンカーボネート単位を含むポリカーボネート樹脂を「耐熱ポリカーボネート樹脂」ということがある。 The aromatic polycarbonate resin may be a resin containing carbonate units (bisphenolisophorone carbonate units) represented by the following formula (5). Such aromatic polycarbonate resins have higher heat resistance than aromatic polycarbonate resins containing carbonate units represented by the above formula (1). Hereinafter, polycarbonate resins containing bisphenolisophorone carbonate units may be referred to as "heat-resistant polycarbonate resins."

 式(5)中、RおよびRは、それぞれ独立して炭素数1~12のアルキル基であり、Rは、炭素数1~12のアルキル基であり、pおよびqは、それぞれ独立して0~4であり、tは、0~10である。 In formula (5), R a and R b each independently represent an alkyl group having 1 to 12 carbon atoms, R g each independently represent an alkyl group having 1 to 12 carbon atoms, p and q each independently represent an integer of 0 to 4, and t represents an integer of 0 to 10.

 なお、各RおよびRの少なくとも1つは、シクロヘキシリデン架橋基に対してメタ位に配置されることが好ましい。 It is preferred that at least one of R a and R b is located meta to the cyclohexylidene bridging group.

 また、RおよびRは、それぞれ独立して炭素数1~4のアルキル基であり、Rは、炭素数1~4のアルキル基であり、pおよびqは、それぞれ0または1であり、tは、0~5であってもよい。 Furthermore, R a and R b are each independently an alkyl group having 1 to 4 carbon atoms, R g is an alkyl group having 1 to 4 carbon atoms, p and q are each 0 or 1, and t may be 0 to 5.

 さらに、R、R、およびRは、それぞれメチル基であり、pおよびq、はそれぞれ0または1であり、tは、0または3であり、好ましくは0である。 Furthermore, R a , R b , and R g are each a methyl group, p and q are each 0 or 1, and t is 0 or 3, preferably 0.

 このような耐熱ポリカーボネート樹脂の具体例としては、ビスフェノールA(2,2-ビス(4-ヒドロキシフェニル)プロパン)から誘導されるカーボネート単位(ビスフェノールAカーボネート単位)と、式(5)で表されるカーボネート単位(ビスフェノールイソホロンカーボネート単位)と、を含む樹脂が挙げられる。この場合、ビスフェノールイソホロンカーボネート単位における、pおよびqはそれぞれ0であり、各Rはメチル基であり、tは3であることが好ましい。この場合、ビスフェノールイソホロンカーボネート単位は、特に、ビスフェノールTMC(1,1-ビス-(4-ヒドロキシフェニル)-3,3,5-トリメチルシクロヘキサン)に由来する構造を含むカーボネート単位となる。 A specific example of such a heat-resistant polycarbonate resin is a resin containing carbonate units (bisphenol A carbonate units) derived from bisphenol A (2,2-bis(4-hydroxyphenyl)propane) and carbonate units (bisphenol isophorone carbonate units) represented by formula (5). In this case, it is preferable that p and q in the bisphenol isophorone carbonate units are each 0, each R g is a methyl group, and t is 3. In this case, the bisphenol isophorone carbonate units are particularly carbonate units containing a structure derived from bisphenol TMC (1,1-bis-(4-hydroxyphenyl)-3,3,5-trimethylcyclohexane).

 このようなビスフェノールイソホロンカーボネート単位は、芳香環構造と脂環構造の双方を含んでいる。このため、ビスフェノールイソホロンカーボネート単位は、三次元成形絶縁体1の耐熱性(難燃性)および耐トラッキング性の双方を特に向上させることに寄与する。 Such bisphenol isophorone carbonate units contain both aromatic ring structures and alicyclic structures. Therefore, the bisphenol isophorone carbonate units contribute particularly to improving both the heat resistance (flame retardancy) and tracking resistance of the three-dimensional molded insulator 1.

 耐熱ポリカーボネート樹脂を構成する全構造単位のうち、ビスフェノールイソホロンカーボネート単位の割合は、30質量%以上であることが好ましく、35質量%以上60質量%以下であることがより好ましく、40質量%以上50質量%以下であることがさらに好ましい。これにより、三次元成形絶縁体1の耐熱性(難燃性)および耐トラッキング性の双方を向上させることに寄与する。また、耐熱ポリカーボネート樹脂の成形性を高められる。 Among all the structural units constituting the heat-resistant polycarbonate resin, the proportion of bisphenol isophorone carbonate units is preferably 30% by mass or more, more preferably 35% to 60% by mass, and even more preferably 40% to 50% by mass. This contributes to improving both the heat resistance (flame retardancy) and tracking resistance of the three-dimensional molded insulator 1. It also improves the moldability of the heat-resistant polycarbonate resin.

 なお、ビスフェノールイソホロンカーボネート単位の割合が前記下限値を下回ると、三次元成形絶縁体1の耐熱性(難燃性)および耐トラッキング性の少なくとも一方が低下するおそれがある。一方、ビスフェノールイソホロンカーボネート単位の割合が前記上限値を上回ると、耐熱ポリカーボネート樹脂の成形性が低下し、三次元成形絶縁体1の寸法精度が低下するおそれがある。 If the proportion of bisphenol isophorone carbonate units falls below the lower limit, at least one of the heat resistance (flame retardancy) and tracking resistance of the three-dimensionally molded insulator 1 may decrease. On the other hand, if the proportion of bisphenol isophorone carbonate units exceeds the upper limit, the moldability of the heat-resistant polycarbonate resin may decrease, and the dimensional accuracy of the three-dimensionally molded insulator 1 may decrease.

 耐熱ポリカーボネート樹脂のガラス転移温度Tgは、160℃以上230℃以下であることが好ましく、165℃以上220℃以下であることがより好ましい。耐熱ポリカーボネート樹脂のガラス転移温度Tgが前記範囲内であれば、三次元成形絶縁体1の耐熱性を特に高めることができる。これにより、例えば三次元成形絶縁体1において沿面放電が生じた場合でも、炭化による着色を特に抑制できるため、外観不良の発生や炭化に伴う絶縁性の低下を特に抑制できる。 The glass transition temperature Tg of the heat-resistant polycarbonate resin is preferably 160°C or higher and 230°C or lower, and more preferably 165°C or higher and 220°C or lower. If the glass transition temperature Tg of the heat-resistant polycarbonate resin is within this range, the heat resistance of the three-dimensional molded insulator 1 can be particularly improved. As a result, even if creeping discharge occurs in the three-dimensional molded insulator 1, discoloration due to carbonization can be particularly suppressed, thereby particularly suppressing the occurrence of poor appearance and the deterioration of insulation properties due to carbonization.

 なお、ガラス転移温度Tgが前記下限値を下回ると、沿面放電に伴う外観不良や炭化が発生しやすくなるおそれがある。一方、ガラス転移温度Tgが前記上限値を上回ると、耐熱ポリカーボネート樹脂の成形温度が高くなりすぎて、成形不良が生じやすくなるおそれがある。また、耐熱ポリカーボネート樹脂と相溶性樹脂とをアロイ化した場合には、相溶性樹脂の耐熱性によっては、相溶性樹脂の熱劣化を招くおそれがある。 If the glass transition temperature Tg is below the lower limit, there is a risk that poor appearance and carbonization due to creeping discharge may occur. On the other hand, if the glass transition temperature Tg is above the upper limit, the molding temperature of the heat-resistant polycarbonate resin may become too high, making molding defects more likely to occur. Furthermore, when heat-resistant polycarbonate resin is alloyed with a compatible resin, there is a risk that thermal degradation of the compatible resin may occur, depending on the heat resistance of the compatible resin.

  3.2.5.ポリマーアロイ
 三次元成形絶縁体1の構成材料は、芳香族ポリカーボネート樹脂と相溶性樹脂とをアロイ化してなるポリマーアロイを含んでいてもよい。ポリマーアロイは、複数種のポリマーが混合されてなる、単一相の材料または安定した多相の材料を指し、好ましくは単一相の材料を指す。本明細書において「アロイ化」とは、複数種のポリマーを含む原材料に混練等が行われて、このような単一相または多相の材料が調製されることをいう。特に、芳香族ポリカーボネート樹脂と相溶性樹脂とをアロイ化することにより、芳香族ポリカーボネート樹脂に由来する耐熱性と、相溶性樹脂に由来する別の特性と、を併せ持つ三次元成形絶縁体1が得られる。
3.2.5. Polymer Alloy The constituent material of the three-dimensionally molded insulator 1 may include a polymer alloy formed by alloying an aromatic polycarbonate resin with a compatible resin. A polymer alloy refers to a single-phase material or a stable multi-phase material formed by mixing multiple polymers, preferably a single-phase material. As used herein, "alloying" refers to the preparation of such a single-phase or multi-phase material by kneading or otherwise mixing raw materials containing multiple polymers. In particular, alloying an aromatic polycarbonate resin with a compatible resin provides a three-dimensionally molded insulator 1 that combines the heat resistance inherent in the aromatic polycarbonate resin with other properties inherent in the compatible resin.

 相溶性樹脂には、前述した、ポリオレフィン樹脂、ポリアミド樹脂、脂肪族ポリカーボネート樹脂、上記式(5)で表されるカーボネート単位を含む芳香族ポリカーボネート樹脂(耐熱ポリカーボネート樹脂)等が好ましく用いられる。この場合、これらの相溶性樹脂とアロイ化される芳香族ポリカーボネート樹脂には、上記式(1)で表される構造単位を有する樹脂が好ましく用いられる。このような組み合わせでは、上記式(1)で表される構造単位を有する芳香族ポリカーボネート樹脂に比べて、相溶性樹脂の耐トラッキング性(比較トラッキング指数CTI)が高い。これにより、耐熱性と耐トラッキング性とを併せ持つ三次元成形絶縁体1が得られる。 Preferably, the compatible resins used are the aforementioned polyolefin resins, polyamide resins, aliphatic polycarbonate resins, and aromatic polycarbonate resins (heat-resistant polycarbonate resins) containing carbonate units represented by formula (5) above. In this case, the aromatic polycarbonate resin alloyed with these compatible resins is preferably a resin having a structural unit represented by formula (1) above. In such a combination, the tracking resistance (comparative tracking index CTI) of the compatible resin is higher than that of the aromatic polycarbonate resin having a structural unit represented by formula (1) above. This results in a three-dimensional molded insulator 1 that combines heat resistance and tracking resistance.

 ポリマーアロイにおける相溶性樹脂の比率は、特に限定されないが、5質量%以上80質量%以下であることが好ましく、10質量%以上75質量%以下であることがより好ましく、20質量%以上70質量%以下であることがさらに好ましく、40質量%以上65質量%以下であることが特に好ましい。このような構成によれば、上記式(1)で表される構造単位を有する芳香族ポリカーボネート樹脂が持つ耐熱性や難燃性等の特性と、相溶性樹脂が持つ特性と、をバランスよく有するポリマーアロイを実現できる。 The proportion of the compatible resin in the polymer alloy is not particularly limited, but is preferably 5% by mass or more and 80% by mass or less, more preferably 10% by mass or more and 75% by mass or less, even more preferably 20% by mass or more and 70% by mass or less, and particularly preferably 40% by mass or more and 65% by mass or less. This configuration makes it possible to achieve a polymer alloy that has a good balance between the properties of the compatible resin, such as heat resistance and flame retardancy, of the aromatic polycarbonate resin having the structural unit represented by formula (1) above.

 相溶性樹脂の比較トラッキング指数CTIは、400V以上であることが好ましく、600V以上であることがより好ましい。これにより、耐トラッキング性が特に良好な三次元成形絶縁体1が得られる。 The comparative tracking index CTI of the compatible resin is preferably 400 V or higher, and more preferably 600 V or higher. This results in a three-dimensional molded insulator 1 with particularly good tracking resistance.

 また、相溶性樹脂の比較トラッキング指数CTIは、芳香族ポリカーボネート樹脂の比較トラッキング指数CTIよりも50V以上高いことが好ましく、100V以上高いことがより好ましい。これにより、難燃性と耐トラッキング性をより良好に両立させた三次元成形絶縁体1が得られる。 Furthermore, the comparative tracking index CTI of the compatible resin is preferably at least 50 V higher than the comparative tracking index CTI of the aromatic polycarbonate resin, and more preferably at least 100 V higher. This results in a three-dimensional molded insulator 1 that better combines flame retardancy and tracking resistance.

 相溶性樹脂のガラス転移温度Tgは、125℃以上であることが好ましく、130℃以上230℃以下であることがより好ましい。これにより、相溶性樹脂に耐熱性が付与されるため、例えば三次元成形絶縁体1において沿面放電が生じた場合でも、炭化による着色を抑制しやすくなる。その結果、三次元成形絶縁体1における外観不良の発生や炭化に伴う絶縁性の低下を抑制できる。 The glass transition temperature Tg of the compatible resin is preferably 125°C or higher, and more preferably 130°C or higher and 230°C or lower. This gives the compatible resin heat resistance, making it easier to suppress discoloration due to carbonization, even if creeping discharge occurs in the three-dimensional molded insulator 1. As a result, it is possible to suppress the occurrence of poor appearance in the three-dimensional molded insulator 1 and the deterioration of insulation properties due to carbonization.

 また、相溶性樹脂は、全モノマー成分における芳香族モノマーのモル分率が90%以下であることが好ましく、70%以下であることがより好ましく、50%以下であることがさらに好ましい。このような相溶性樹脂は、相対的に脂肪族モノマーに由来する構造の比率が高くなる。このため、三次元成形絶縁体1に対し、良好な耐トラッキング性を付与できる。これにより、難燃性と耐トラッキング性の双方においてより良好な三次元成形絶縁体1が得られる。また、例えば三次元成形絶縁体1において沿面放電が生じた場合でも、炭化による着色を抑制しやすくなる。その結果、三次元成形絶縁体1における外観不良の発生や炭化に伴う絶縁性の低下を抑制できる。なお、芳香族モノマーは、芳香環構造を含むモノマー(芳香族化合物)を指す。 Furthermore, the compatible resin preferably has an aromatic monomer molar fraction of 90% or less, more preferably 70% or less, and even more preferably 50% or less of the total monomer components. Such a compatible resin has a relatively high proportion of structures derived from aliphatic monomers. This allows the three-dimensionally molded insulator 1 to have good tracking resistance. This results in a three-dimensionally molded insulator 1 that is better in both flame retardancy and tracking resistance. Furthermore, even if creeping discharge occurs in the three-dimensionally molded insulator 1, discoloration due to carbonization can be more easily suppressed. As a result, the occurrence of poor appearance in the three-dimensionally molded insulator 1 and a decrease in insulating properties due to carbonization can be suppressed. Note that aromatic monomer refers to a monomer (aromatic compound) that contains an aromatic ring structure.

 なお、ポリマーアロイには、上記成分以外の樹脂が含まれていてもよい。つまり、ポリマーアロイは、3種以上の樹脂がアロイ化していてもよい。 The polymer alloy may also contain resins other than the above components. In other words, the polymer alloy may be an alloy of three or more resins.

 ポリマーアロイの調製方法の一例について説明する。まず、原材料を予備混合し、バッチ式混練機や二軸スクリュー押出機等で溶融、混練する。これにより、原材料に機械的撹拌操作が加えられ、ポリマーアロイを含む混練物が得られる。混練溶融条件は、原材料の種類や配合比等に応じて適宜設定されるが、一例として、温度200~250℃、スクリュー回転数300~1000rpm、混練時間3~20分程度、が挙げられる。次に、必要に応じて、混練物をペレット化する。 An example of a method for preparing a polymer alloy is described below. First, the raw materials are premixed, then melted and kneaded using a batch kneader or twin-screw extruder. This mechanically stirs the raw materials, resulting in a kneaded product containing a polymer alloy. The kneading and melting conditions are set appropriately depending on the type and blending ratio of the raw materials, but examples include a temperature of 200-250°C, a screw rotation speed of 300-1000 rpm, and a kneading time of approximately 3-20 minutes. Next, the kneaded product is pelletized as necessary.

 また、原材料には、必要に応じて、相溶化剤を添加するようにしてもよい。相溶化剤を添加することにより、アロイ化される樹脂の相溶性をより高めることができる。 Furthermore, a compatibilizer may be added to the raw materials as needed. By adding a compatibilizer, the compatibility of the resins being alloyed can be further improved.

 相溶化剤の添加量は、樹脂100質量部に対し、2質量部以上30質量部以下であることが好ましく、5質量部以上20質量部以下であることがより好ましい。 The amount of compatibilizer added is preferably 2 to 30 parts by mass, and more preferably 5 to 20 parts by mass, per 100 parts by mass of resin.

  3.2.6.添加剤
 三次元成形絶縁体1は、任意の添加剤を含有していてもよい。添加剤としては、例えば、難燃剤、色材、安定剤、滑剤、加工助剤、帯電防止剤、酸化防止剤、中和剤、紫外線吸収剤、分散剤、増粘剤、離型剤、充填材、流動性改良剤、可塑剤、抗菌剤等が挙げられる。なお、添加剤は、1種が含有されていてもよく、2種以上が任意の組み合わせで含有されていてもよい。
3.2.6 Additives The three-dimensionally molded insulator 1 may contain any additive. Examples of additives include flame retardants, colorants, stabilizers, lubricants, processing aids, antistatic agents, antioxidants, neutralizing agents, UV absorbers, dispersants, thickeners, mold release agents, fillers, flow improvers, plasticizers, and antibacterial agents. Note that one type of additive may be contained, or two or more types may be contained in any combination.

 このうち、難燃剤は、三次元成形絶縁体1の難燃性を高める。
 難燃剤としては、例えば、ハロゲン系難燃剤、赤リン、ポリリン酸アンモニウムのようなポリリン酸系難燃剤等の無機リン系難燃剤、トリアリールリン酸エステル化合物のような有機リン系難燃剤、金属水酸化物系化合物、酸化アンチモン系化合物、窒素含有化合物等が挙げられる。また、難燃剤には、これらのうちの2種以上が組み合わされて用いられていてもよい。
Of these, the flame retardant enhances the flame retardancy of the three-dimensionally molded insulator 1 .
Examples of the flame retardant include inorganic phosphorus-based flame retardants such as halogen-based flame retardants, red phosphorus and polyphosphate-based flame retardants such as ammonium polyphosphate, organic phosphorus-based flame retardants such as triaryl phosphate ester compounds, metal hydroxide-based compounds, antimony oxide-based compounds, nitrogen-containing compounds, etc. Furthermore, the flame retardant may be a combination of two or more of these.

 このうち、難燃剤には、リン系難燃剤または窒素含有化合物が好ましく用いられ、窒素含有化合物がより好ましく用いられる。難燃剤が窒素含有化合物を含むことにより、三次元成形絶縁体1の難燃性をより高めることができる。また、窒素含有化合物には、ハロゲン原子が含まれないため、いわゆるハロゲンフリー、フッ素フリーの三次元成形絶縁体1を実現できる。 Among these, phosphorus-based flame retardants or nitrogen-containing compounds are preferably used as flame retardants, with nitrogen-containing compounds being more preferred. When the flame retardant contains a nitrogen-containing compound, the flame retardancy of the three-dimensional molded insulator 1 can be further improved. Furthermore, because nitrogen-containing compounds do not contain halogen atoms, a so-called halogen-free, fluorine-free three-dimensional molded insulator 1 can be realized.

 窒素含有化合物としては、例えば、トリアジン骨格を有する化合物が挙げられる。
 トリアジン骨格を有する化合物としては、メラミン;ブチルメラミン、トリメチロールメラミン、ヘキサメチロールメラミン、ヘキサメトキシメチルメラミン、リン酸メラミンのようなメラミン誘導体;シアヌル酸;メチルシアヌレート、ジエチルシアヌレート、トリメチルシアヌレート、トリエチルシアヌレートのようなシアヌル酸誘導体;イソシアヌル酸;メチルイソシアヌレート、N,N’-ジエチルイソシアヌレート、トリスメチルイソシアヌレート、トリスエチルイソシアヌレート、ビス(2-カルボキシエチル)イソシアヌレート、1,3,5-トリス(2-カルボキシエチル)イソシアヌレート、トリス(2,3-エポキシプロピル)イソシアヌレートのようなイソシアヌル酸誘導体;メラミンシアヌレート;メラミンイソシアヌレート等が挙げられる。これらの化合物は、1種または2種以上を組み合わせて用いることができる。
Examples of the nitrogen-containing compound include compounds having a triazine skeleton.
Examples of compounds having a triazine skeleton include melamine; melamine derivatives such as butyl melamine, trimethylol melamine, hexamethylol melamine, hexamethoxymethyl melamine, and melamine phosphate; cyanuric acid; cyanuric acid derivatives such as methyl cyanurate, diethyl cyanurate, trimethyl cyanurate, and triethyl cyanurate; isocyanuric acid; isocyanuric acid derivatives such as methyl isocyanurate, N,N'-diethyl isocyanurate, trismethyl isocyanurate, trisethyl isocyanurate, bis(2-carboxyethyl)isocyanurate, 1,3,5-tris(2-carboxyethyl)isocyanurate, and tris(2,3-epoxypropyl)isocyanurate; melamine cyanurate; and melamine isocyanurate. These compounds can be used alone or in combination of two or more.

 このうち、トリアジン骨格を有する化合物は、メラミン、メラミンシアヌレート、メラミンイソシアヌレートおよびこれらの誘導体よりなる群から選択される1種以上のメラミン系化合物が好ましく用いられ、メラミンシアヌレートがより好ましく用いられる。これにより、三次元成形絶縁体1の難燃性を特に高めることができる。 Among these, the compound having a triazine skeleton is preferably one or more melamine-based compounds selected from the group consisting of melamine, melamine cyanurate, melamine isocyanurate, and derivatives thereof, with melamine cyanurate being more preferred. This can particularly enhance the flame retardancy of the three-dimensional molded insulator 1.

 難燃剤の添加量は、樹脂100質量部に対して、好ましくは0.1質量部以上30質量部以下とされ、より好ましくは1質量部以上20質量部以下とされ、さらに好ましくは3質量部以上10質量部以下とされる。難燃剤の添加量を前記範囲内とすることにより、難燃性を高める効果が十分に発現するとともに、難燃剤の余剰に伴う機械的特性の低下といった副作用を抑制できる。 The amount of flame retardant added is preferably 0.1 to 30 parts by mass, more preferably 1 to 20 parts by mass, and even more preferably 3 to 10 parts by mass, per 100 parts by mass of resin. By keeping the amount of flame retardant added within this range, the effect of enhancing flame retardancy is fully realized, while side effects such as reduced mechanical properties due to excess flame retardant can be suppressed.

 難燃剤は、例えば、粒子状をなしている。この場合、難燃剤の平均粒径は、好ましくは0.01μm以上10μm以下とされ、より好ましくは0.05μm以上5μm以下とされ、さらに好ましくは0.2μm以上2μm以下とされる。難燃剤の平均粒径が前記範囲内であることにより、難燃剤の分散性が特に良好になるため、三次元成形絶縁体1の難燃性を特に高めることができる。なお、難燃剤の平均粒径は、レーザー回折式粒度分布測定装置を用い、体積基準の粒度分布における小径側からの累積が50%のときの粒径である。 The flame retardant is, for example, in particulate form. In this case, the average particle size of the flame retardant is preferably 0.01 μm or more and 10 μm or less, more preferably 0.05 μm or more and 5 μm or less, and even more preferably 0.2 μm or more and 2 μm or less. When the average particle size of the flame retardant is within the above range, the dispersibility of the flame retardant is particularly good, thereby particularly enhancing the flame retardancy of the three-dimensional molded insulator 1. The average particle size of the flame retardant is the particle size at which the cumulative total from the small diameter side in the volume-based particle size distribution is 50% as measured using a laser diffraction particle size distribution analyzer.

 また、添加剤の合計の添加量は、樹脂100質量部に対して、好ましくは0.1質量部以上10質量部以下とされ、より好ましくは0.3質量部以上5質量部以下とされ、さらに好ましくは0.5質量部以上3質量部以下とされる。 Furthermore, the total amount of additives added is preferably 0.1 to 10 parts by mass, more preferably 0.3 to 5 parts by mass, and even more preferably 0.5 to 3 parts by mass, per 100 parts by mass of resin.

 3.3.多層構造
 次に、変形例に係る三次元成形絶縁体1について説明する。
 図7は、変形例に係る三次元成形絶縁体1を示す断面図である。
3.3 Multilayer Structure Next, a three-dimensionally shaped insulator 1 according to a modified example will be described.
FIG. 7 is a cross-sectional view showing a three-dimensionally shaped insulator 1 according to a modified example.

 以下、変形例に係る三次元成形絶縁体1について説明するが、以下の説明では、図1に示す三次元成形絶縁体1との相違点を中心に説明し、同様の事項についてはその説明を省略する。 The following describes a modified three-dimensionally molded insulator 1. However, the following explanation focuses on the differences from the three-dimensionally molded insulator 1 shown in Figure 1, and similar points will not be explained again.

 図7に示す三次元成形絶縁体1は、多層構造になっていること以外、図1に示す三次元成形絶縁体1と同様である。 The three-dimensionally molded insulator 1 shown in Figure 7 is similar to the three-dimensionally molded insulator 1 shown in Figure 1, except that it has a multi-layer structure.

 図7に示す三次元成形絶縁体1は、下方から順に積層されている第1層101、中間層103および第2層102を有する。中間層103は、互いに表裏の関係を有する下面(第1面)および上面(第2面)を有し、芳香族ポリカーボネート樹脂および難燃剤を含むことが好ましい。第1層101は、中間層103の下面(第1面)に積層され、第1樹脂を含む。第2層102は、中間層103の上面(第2面)に積層され、第2樹脂を含む。そして、第1樹脂および第2樹脂は、中間層103が含む芳香族ポリカーボネート樹脂よりも耐トラッキング性が高い材料であることが好ましい。 The three-dimensional molded insulator 1 shown in Figure 7 has a first layer 101, an intermediate layer 103, and a second layer 102, which are layered from bottom to top. The intermediate layer 103 has a lower surface (first surface) and an upper surface (second surface) that are opposite each other, and preferably contains an aromatic polycarbonate resin and a flame retardant. The first layer 101 is layered on the lower surface (first surface) of the intermediate layer 103 and contains a first resin. The second layer 102 is layered on the upper surface (second surface) of the intermediate layer 103 and contains a second resin. The first resin and the second resin are preferably materials with higher tracking resistance than the aromatic polycarbonate resin contained in the intermediate layer 103.

 このような構成によれば、芳香族ポリカーボネート樹脂が、主鎖に芳香環構造を含むポリカーボネート樹脂であり、芳香環構造の比率が高いことから、中間層103に良好な耐熱性が付与される。また、中間層103は、難燃剤を含む。これらが作用することで、中間層103は、良好な難燃性を有する。 With this configuration, the aromatic polycarbonate resin is a polycarbonate resin containing an aromatic ring structure in the main chain, and the high proportion of aromatic ring structures provides the intermediate layer 103 with good heat resistance. The intermediate layer 103 also contains a flame retardant. These factors act to provide the intermediate layer 103 with good flame retardancy.

 また、中間層103は、第1層101および第2層102に挟まれている。このため、三次元成形絶縁体1に沿面放電が生じた場合、中間層103がアーク放電等に直接曝されることが防止される。第1層101および第2層102が含む樹脂として、芳香族ポリカーボネート樹脂よりも耐トラッキング性が高い材料を用いることにより、三次元成形絶縁体1には、良好な耐トラッキング性が付与される。したがって、難燃性と耐トラッキング性の双方に優れる三次元成形絶縁体1が得られる。 Furthermore, the intermediate layer 103 is sandwiched between the first layer 101 and the second layer 102. Therefore, if a creeping discharge occurs in the three-dimensionally molded insulator 1, the intermediate layer 103 is prevented from being directly exposed to arc discharge, etc. By using a material with higher tracking resistance than aromatic polycarbonate resin as the resin contained in the first layer 101 and the second layer 102, the three-dimensionally molded insulator 1 is endowed with good tracking resistance. Therefore, a three-dimensionally molded insulator 1 with excellent flame retardancy and tracking resistance is obtained.

 また、このような構成によれば、多層構造による効果の1つとして、耐ピンホール性の向上が図られる。耐ピンホール性が向上することにより、三次元成形絶縁体1の絶縁性、難燃性および耐トラッキング性をさらに高めることができる。 Furthermore, with this configuration, one of the effects of the multi-layer structure is improved pinhole resistance. Improved pinhole resistance further enhances the insulation properties, flame retardancy, and tracking resistance of the three-dimensional molded insulator 1.

 第1樹脂および第2樹脂の各比較トラッキング指数CTIは、400V以上であることが好ましく、600V以上であることがより好ましい。これにより、耐トラッキング性が特に良好な第1樹脂および第2樹脂が得られる。 The comparative tracking index CTI of each of the first resin and second resin is preferably 400 V or higher, and more preferably 600 V or higher. This results in a first resin and second resin with particularly good tracking resistance.

 また、第1樹脂および第2樹脂の各比較トラッキング指数CTIは、芳香族ポリカーボネート樹脂の比較トラッキング指数CTIよりも50V以上高いことが好ましく、100V以上高いことがより好ましい。これにより、難燃性と耐トラッキング性をより良好に両立させた三次元成形絶縁体1が得られる。 Furthermore, the comparative tracking index CTI of each of the first resin and the second resin is preferably at least 50 V higher than the comparative tracking index CTI of the aromatic polycarbonate resin, and more preferably at least 100 V higher. This results in a three-dimensional molded insulator 1 that better balances flame retardancy and tracking resistance.

 第1樹脂および第2樹脂の各ガラス転移温度Tgは、125℃以上であることが好ましく、130℃以上200℃未満であることがより好ましい。これにより、第1樹脂および第2樹脂に耐熱性が付与されるため、例えば第1層101および第2層102において沿面放電が生じた場合でも、炭化による着色を抑制しやすくなる。その結果、第1層101および第2層102における外観不良の発生や炭化に伴う絶縁性の低下を抑制できる。なお、第1樹脂および第2樹脂の各ガラス転移温度Tgは、DSC(示差走査熱量計)法により測定される。DSC法における加熱速度は、10℃/分とする。 The glass transition temperature Tg of each of the first resin and the second resin is preferably 125°C or higher, and more preferably 130°C or higher and lower than 200°C. This provides heat resistance to the first resin and the second resin, making it easier to suppress coloration due to carbonization even if creeping discharge occurs in the first layer 101 and the second layer 102, for example. As a result, the occurrence of poor appearance in the first layer 101 and the second layer 102 and the deterioration of insulation due to carbonization can be suppressed. The glass transition temperature Tg of each of the first resin and the second resin is measured using a differential scanning calorimeter (DSC) method. The heating rate in the DSC method is 10°C/min.

 第1樹脂および第2樹脂の300℃、1.2kg荷重における各メルトボリュームレイト(MVR)は、5[cm/10min]以上30[cm/10min]以下であることが好ましく、8[cm/10min]以上20[cm/10min]以下であることがより好ましい。これにより、三次元成形絶縁体1の二次加工における成形性、特に真空成形において歪み等の不良を生じない特性を高めることができる。なお、メルトボリュームレイトが前記下限値を下回ると、流動性が不足し、成形性が低下するおそれがある。一方、メルトボリュームレイトが前記上限値を上回ると、成形体の耐衝撃性等が低下するおそれがある。なお、メルトボリュームレイトは、JIS K 7210:2014に規定の試験方法に準じて測定される。 The melt volume rate (MVR) of each of the first resin and the second resin at 300°C and a load of 1.2 kg is preferably 5 cm 3 /10 min or more and 30 cm 3 /10 min or less, and more preferably 8 cm 3 /10 min or more and 20 cm 3 /10 min or less. This improves the moldability of the three-dimensionally molded insulator 1 during secondary processing, particularly the ability to prevent defects such as distortion during vacuum molding. If the melt volume rate is below the lower limit, the fluidity may be insufficient and moldability may be reduced. On the other hand, if the melt volume rate is above the upper limit, the impact resistance of the molded body may be reduced. The melt volume rate is measured in accordance with the test method specified in JIS K 7210:2014.

 また、第1樹脂および第2樹脂は、全モノマー成分における芳香族モノマーのモル分率が90%以下であることが好ましく、70%以下であることがより好ましく、50%以下であることがさらに好ましい。このような第1樹脂および第2樹脂は、相対的に脂肪族モノマーに由来する構造の比率が高くなる。このため、第1樹脂および第2樹脂に対し、良好な耐トラッキング性を付与できる。これにより、難燃性と耐トラッキング性の双方においてより良好な第1樹脂および第2樹脂が得られる。また、例えば三次元成形絶縁体1において沿面放電が生じた場合でも、炭化による着色を抑制しやすくなる。その結果、三次元成形絶縁体1における外観不良の発生や炭化に伴う絶縁性の低下を抑制できる。なお、芳香族モノマーは、芳香環構造を含むモノマー(芳香族化合物)を指す。 Furthermore, the first resin and second resin preferably have an aromatic monomer molar fraction of 90% or less, more preferably 70% or less, and even more preferably 50% or less, of the total monomer components. Such first resins and second resins have a relatively high proportion of structures derived from aliphatic monomers. This provides the first resin and second resin with good tracking resistance. This results in first resins and second resins with better flame retardancy and tracking resistance. Furthermore, even if creeping discharge occurs in the three-dimensionally molded insulator 1, discoloration due to carbonization can be more easily suppressed. As a result, the occurrence of poor appearance in the three-dimensionally molded insulator 1 and the deterioration of insulating properties due to carbonization can be suppressed. Note that aromatic monomer refers to a monomer (aromatic compound) containing an aromatic ring structure.

 第1層101における第1樹脂の含有率、および、第2層102における第2樹脂の含有率は、70質量%以上であることが好ましく、80質量%以上であることがより好ましい。
 第1樹脂および第2樹脂としては、前述した樹脂材料が挙げられる。
The content of the first resin in the first layer 101 and the content of the second resin in the second layer 102 are preferably 70% by mass or more, and more preferably 80% by mass or more.
The first resin and the second resin may be the resin materials described above.

 ここで、本実施形態に係る三次元成形絶縁体1に使用可能な樹脂(化合物)について、耐トラッキング性およびガラス転移温度Tgを例示する。下記の表1は、前述した樹脂材料(第1樹脂および第2樹脂を含む)として使用可能な各種樹脂、および、前述した芳香族ポリカーボネート樹脂について、耐トラッキング性を表すCTI値およびガラス転移温度Tgを列挙した表である。また、芳香族ポリカーボネート樹脂については、粘度平均分子量も記載している。 Here, the tracking resistance and glass transition temperature Tg of resins (compounds) that can be used for the three-dimensionally molded insulator 1 according to this embodiment are exemplified. Table 1 below lists the CTI value, which indicates tracking resistance, and the glass transition temperature Tg for various resins that can be used as the resin materials (including the first resin and second resin) mentioned above, and for the aromatic polycarbonate resin mentioned above. For aromatic polycarbonate resins, the viscosity average molecular weight is also listed.

 表1に示すように、芳香族ポリカーボネート樹脂は、他の樹脂に比べて耐トラッキング性がやや低い傾向がある。このため、芳香族ポリカーボネート樹脂とこれらの樹脂を併用することは、双方の樹脂が持つ特性を両立させるという観点において有用である。 As shown in Table 1, aromatic polycarbonate resins tend to have slightly lower tracking resistance than other resins. For this reason, using these resins in combination with aromatic polycarbonate resins is useful from the perspective of achieving the best possible properties of both resins.

 図7に示す三次元成形絶縁体1の製造方法としては、例えば、共押し出し法、乾式ラミネート法、押し出しラミネート法、ホットメルト法等が挙げられる。 Methods for manufacturing the three-dimensional molded insulator 1 shown in Figure 7 include, for example, co-extrusion, dry lamination, extrusion lamination, and hot melt.

 3.4.三次元成形絶縁体の特性
 次に、実施形態に係る三次元成形絶縁体1の特性について説明する。
3.4. Characteristics of the Three-Dimensional Molded Insulator Next, the characteristics of the three-dimensionally molded insulator 1 according to the embodiment will be described.

  3.4.1.耐トラッキング性
 実施形態に係る三次元成形絶縁体1の耐トラッキング性は、ASTM D3638に準拠して測定された耐トラッキング性の指標となる比較トラッキング指数CTIによって定量化できる。
3.4.1. Tracking Resistance The tracking resistance of the three-dimensionally shaped insulator 1 according to the embodiment can be quantified by the comparative tracking index CTI, which is an index of tracking resistance measured in accordance with ASTM D3638.

 実施形態に係る三次元成形絶縁体1の比較トラッキング指数CTI(CTI値)は、600V以上であることが好ましい。CTI値が前記範囲内であれば、耐トラッキング性を表すランクPLCは、最高ランクの0となる。このため、CTI値が前記範囲内である三次元成形絶縁体1は、耐トラッキング性が特に良好であるといえる。 The comparative tracking index CTI (CTI value) of the three-dimensionally molded insulator 1 according to the embodiment is preferably 600 V or higher. If the CTI value is within the above range, the rank PLC, which indicates tracking resistance, will be the highest rank of 0. Therefore, it can be said that a three-dimensionally molded insulator 1 with a CTI value within the above range has particularly good tracking resistance.

 IEC60112第3版に規定される測定方法では、0.1質量%の塩化アンモニウム水溶液と白金電極を用いてCTI値を測定する。より詳細には、この塩化アンモニウム水溶液を規定の滴下数(50滴)滴下し、試験片(n=5)の全てが破壊しない電圧を求め、これをCTI値とする。 The measurement method specified in IEC 60112, 3rd Edition, measures the CTI value using a 0.1% by mass aqueous solution of ammonium chloride and a platinum electrode. More specifically, the specified number of drops (50 drops) of this ammonium chloride aqueous solution are added, and the voltage at which none of the test pieces (n=5) breaks down is determined, and this is taken as the CTI value.

 なお、試験片には、厚さ3mm以上の三次元成形絶縁体1を用いる。試験片は、複数枚の三次元成形絶縁体1を重ねた構成であってもよい。 The test specimen used is a three-dimensionally molded insulator 1 with a thickness of 3 mm or more. The test specimen may also be constructed by stacking multiple three-dimensionally molded insulators 1.

 また、第1樹脂および第2樹脂の比較トラッキング指数CTI、ならびに、芳香族ポリカーボネート樹脂の比較トラッキング指数CTIの各測定方法も、上記と同様である。この場合、試験片には、これらの樹脂を押出成形して得られる、厚さ3mm以上のシートを用いる。 The methods for measuring the comparative tracking index CTI of the first resin and second resin, and the comparative tracking index CTI of the aromatic polycarbonate resin, are also the same as those described above. In this case, the test specimens used are sheets of these resins obtained by extrusion molding, each having a thickness of 3 mm or more.

  3.4.2.難燃性
 実施形態に係る三次元成形絶縁体1の難燃性は、UL94規格に準拠して判定された難燃性のランク(UL94V試験またはUL94VTM試験で判定されたランク)によって定量化できる。
3.4.2. Flame Retardancy The flame retardancy of the three-dimensionally molded insulator 1 according to the embodiment can be quantified by the flame retardancy rank determined in accordance with the UL94 standard (rank determined by the UL94V test or UL94VTM test).

 実施形態に係る三次元成形絶縁体1の難燃性は、UL94V試験による判定ランクが、試験片厚さ0.4mm以上においてV-0であるか、または、UL94VTM試験による判定ランクが、試験片厚さ0.4mm以上においてVTM-0であることが好ましい。 The flame retardancy of the three-dimensional molded insulator 1 according to the embodiment is preferably such that the UL94V test results in a V-0 rating for test specimens with a thickness of 0.4 mm or more, or the UL94VTM test results in a VTM-0 rating for test specimens with a thickness of 0.4 mm or more.

 このような判定ランクを満たす三次元成形絶縁体1は、各試験において最高ランクを満たしているため、難燃性が特に良好であるといえる。 Three-dimensional molded insulators 1 that meet these evaluation ranks achieve the highest rank in each test, and therefore can be said to have particularly good flame retardancy.

 なお、UL94V試験では、サイズが125±5mm×13.0±0.5mm、厚さが0.4mm以上13mm未満の試験片を用いた、垂直燃焼試験を行う。 In the UL94V test, a vertical combustion test is conducted using test specimens measuring 125±5mm x 13.0±0.5mm and with a thickness of 0.4mm or more and less than 13mm.

 また、UL94VTM試験は、試験片が薄くてUL94V試験を行えない場合に行う。UL94VTM試験では、サイズが200mm×50mm、厚さが0.4mm以上0.25mm以下の試験片を用いた、垂直燃焼試験を行う。 The UL94VTM test is also performed when the test specimen is too thin to perform the UL94V test. The UL94VTM test involves a vertical flame test using a test specimen measuring 200mm x 50mm and with a thickness of 0.4mm to 0.25mm.

  3.4.3.絶縁破壊電圧
 実施形態に係る三次元成形絶縁体1の絶縁破壊電圧は、JIS C 2318:2020に規定されている絶縁破壊の強さの測定方法(交流試験)に準じて測定された絶縁破壊電圧である。
3.4.3. Breakdown Voltage The breakdown voltage of the three-dimensionally shaped insulator 1 according to the embodiment is a breakdown voltage measured in accordance with the method for measuring breakdown strength (AC test) specified in JIS C 2318:2020.

 実施形態に係る三次元成形絶縁体1の絶縁破壊電圧は、5kV以上であることが好ましく、7kV以上60kV以下であることがより好ましく、10kV以上50kV以下であることがさらに好ましい。このような絶縁破壊電圧を満たす三次元成形絶縁体1は、絶縁空間距離が短くても十分な絶縁性を確保することに寄与する。なお、絶縁破壊電圧は、前記上限値を上回ってもよいが、個体差を抑えることを考慮した場合、前記上限値以下であることが好ましい。 The breakdown voltage of the three-dimensionally molded insulator 1 according to the embodiment is preferably 5 kV or higher, more preferably 7 kV to 60 kV, and even more preferably 10 kV to 50 kV. A three-dimensionally molded insulator 1 that satisfies this breakdown voltage contributes to ensuring sufficient insulation even when the insulation clearance is short. Note that the breakdown voltage may exceed the upper limit, but is preferably below the upper limit when considering minimizing individual differences.

4.三次元成形絶縁体の製造方法
 次に、三次元成形絶縁体1を製造する方法(実施形態に係る三次元成形絶縁体の製造方法)について説明する。
4. Manufacturing Method of Three-Dimensional Molded Insulator Next, a method of manufacturing the three-dimensionally molded insulator 1 (a method of manufacturing a three-dimensionally molded insulator according to the embodiment) will be described.

 まず、上記の樹脂材料を含む原材料を用い、カレンダリング法、押出法、プレス法、キャスト法等の方法で平坦な形状をなす熱可塑性絶縁シートを作製する。多層構造を有する熱可塑性絶縁シートの場合、前述した方法により作製する。 First, a flat thermoplastic insulating sheet is produced using raw materials containing the above-mentioned resin material by methods such as calendaring, extrusion, pressing, or casting. Thermoplastic insulating sheets with a multilayer structure are produced using the methods described above.

 次に、熱可塑性絶縁シートに対し、熱成形を含む二次加工行う。これにより、凹部12を形成する。熱成形には、真空成形、圧空成形、真空圧空成形等がある。このような熱成形によれば、形状による厚さのバラつきが少なく、かつ、形状精度の高い三次元成形絶縁体1が得られる。また、真空成形および真空圧空成形によれば、特に高い形状精度が得られる。 Next, the thermoplastic insulating sheet is subjected to secondary processing, including thermoforming, to form the recesses 12. Thermoforming methods include vacuum forming, pressure forming, and vacuum pressure forming. This type of thermoforming results in a three-dimensionally formed insulator 1 with little variation in thickness due to shape and high shape precision. Furthermore, vacuum forming and vacuum pressure forming can achieve particularly high shape precision.

 熱成形時の加熱温度は、特に限定されないが、130℃以上260℃以下であることが好ましく、140℃以上240℃以下であることがより好ましい。これにより、厚さのバラつきが特に少なく、かつ、形状精度が特に高い三次元成形絶縁体1が得られる。 The heating temperature during thermoforming is not particularly limited, but is preferably between 130°C and 260°C, and more preferably between 140°C and 240°C. This results in a three-dimensionally molded insulator 1 with particularly little variation in thickness and particularly high shape precision.

 また、熱成形の前または熱成形の後に、別の二次加工が追加されていてもよい。別の二次加工としては、例えば、折り曲げ加工、打ち抜き加工等が挙げられる。 Furthermore, other secondary processes may be added before or after thermoforming. Examples of other secondary processes include folding, punching, etc.

5.三次元成形絶縁体の使用方法
 次に、三次元成形絶縁体1の使用例について説明する。
5. Method of Using the Three-Dimensional Molded Insulator Next, an example of using the three-dimensionally molded insulator 1 will be described.

 図8は、実施形態に係る三次元成形絶縁体1および回路基板9がケース80内に収容されてなる制御装置8を示す断面図である。 Figure 8 is a cross-sectional view showing a control device 8 in which a three-dimensional molded insulator 1 and a circuit board 9 according to the embodiment are housed within a case 80.

 図8に示す制御装置8は、回路基板9および三次元成形絶縁体1と、これらを内部に収容するケース80と、を備える。なお、回路基板9を備える装置は、制御装置8に限定されず、いかなる機能を持つ装置であってもよい。 The control device 8 shown in Figure 8 comprises a circuit board 9, a three-dimensional molded insulator 1, and a case 80 that houses these. Note that the device that comprises the circuit board 9 is not limited to the control device 8, and may be a device with any function.

 ケース80は、有底の箱状をなし、上面が開口しているハウジング81と、ハウジング81の開口部を塞ぐ蓋部82と、放熱シート85と、を有する。 The case 80 is box-shaped with a bottom and includes a housing 81 that is open at the top, a lid 82 that covers the opening of the housing 81, and a heat dissipation sheet 85.

 ハウジング81は、X-Y面に沿って広がる底部と、底部の外端から上方に向かって立ち上がる壁部と、を有する。ハウジング81の内部には、回路基板9が収容されている。回路基板9は、図8には図示しない固定ビス94により、ハウジング81に固定されている。また、回路基板9は、放熱シート85と接触した状態で固定される。 The housing 81 has a bottom that extends along the X-Y plane and a wall that rises upward from the outer edge of the bottom. A circuit board 9 is housed inside the housing 81. The circuit board 9 is fixed to the housing 81 with fixing screws 94 (not shown in Figure 8). The circuit board 9 is also fixed in contact with the heat dissipation sheet 85.

 蓋部82は、ハウジング81の開口部を塞いでいればよいが、液密的または気密的に封止することが好ましい。これにより、回路基板9を外部環境から安定して保護できる。 The lid 82 only needs to cover the opening of the housing 81, but it is preferable that it be liquid-tight or airtight. This ensures stable protection of the circuit board 9 from the external environment.

 ハウジング81および蓋部82の各構成材料としては、例えば、金属材料、セラミック材料、樹脂材料等が挙げられる。また、これらの2種以上を用いた複合材料であってもよい。このうち、金属材料が好ましく用いられる。金属材料は、熱伝導性および機械的特性に優れるため、ハウジング81および蓋部82の各構成材料として有用である。また、金属材料は、導電性および透磁率に優れることが多いので、ハウジング81および蓋部82を電磁シールドや磁場シールドとして用いることが可能になる。 The materials that make up the housing 81 and the lid 82 include, for example, metal materials, ceramic materials, and resin materials. They may also be composite materials made up of two or more of these. Of these, metal materials are preferred. Metal materials have excellent thermal conductivity and mechanical properties, making them useful as materials for making up the housing 81 and the lid 82. Furthermore, metal materials often have excellent electrical conductivity and magnetic permeability, making it possible to use the housing 81 and the lid 82 as electromagnetic shields or magnetic field shields.

 また、金属材料を用いた場合、回路基板9と金属材料との短絡が懸念される。特に、配線基板90の上面から突出している部品と蓋部82との間で短絡が起きやすいため、従来であれば、これらの間に必要な空間距離を確保する必要がある。 Furthermore, when a metal material is used, there is a concern that a short circuit may occur between the circuit board 9 and the metal material. Short circuits are particularly likely to occur between the components protruding from the top surface of the wiring board 90 and the lid portion 82, so conventionally, it would be necessary to ensure a necessary spatial distance between these two.

 これに対し、三次元成形絶縁体1を用いることで、この空間距離を短縮できる。例えば、図8に示す、パワー半導体素子91と蓋部82との離間距離S3、および、バスバー92と蓋部82との離間距離S4を、それぞれ短縮することができる。これにより、制御装置8の薄型化および小型化が可能になる。 In contrast, by using the three-dimensional molded insulator 1, this spatial distance can be shortened. For example, as shown in Figure 8, the distance S3 between the power semiconductor element 91 and the lid portion 82, and the distance S4 between the bus bar 92 and the lid portion 82 can both be shortened. This makes it possible to make the control device 8 thinner and more compact.

 離間距離S3、S4は、部品に印加される電圧等に応じて異なるが、一例として、10mm以下であることが好ましく、5mm以下であることがより好ましい。これにより、制御装置8のさらなる薄型化および小型化が可能になる。 The separation distances S3 and S4 vary depending on factors such as the voltage applied to the components, but as an example, they are preferably 10 mm or less, and more preferably 5 mm or less. This allows the control device 8 to be made even thinner and more compact.

 また、三次元成形絶縁体1を用いることで、三次元成形絶縁体1の平坦部11と蓋部82との間に、十分なスペースSPを確保できる。このスペースSPは、パワー半導体素子91やバスバー92との絶縁が確保されているため、例えば、別の物体の収容等に利用した場合でも、短絡等の発生を抑制できる。 Furthermore, by using the three-dimensional molded insulator 1, sufficient space SP can be secured between the flat portion 11 of the three-dimensional molded insulator 1 and the lid portion 82. This space SP ensures insulation from the power semiconductor element 91 and bus bar 92, so even if it is used to house another object, for example, the occurrence of short circuits can be suppressed.

 図9は、図8の制御装置8の変形例を示す断面図である。
 図9に示すケース80は、隔壁83が追加されていること以外、図8に示すケース80と同様である。隔壁83は、ハウジング81の内部に設置され、ハウジング81の内部空間を上下に分離している。隔壁83の下方の空間には、回路基板9および三次元成形絶縁体1が収容されている。隔壁83の上方の空間には、回路基板9とは別の回路基板7が収容されている。回路基板7は、配線基板71と、半導体素子72と、を備える。このような回路基板7を回路基板9と同空間に収容することで、ケース80の高さを最小限に抑えつつ、制御装置8の高機能化を図ることができる。
FIG. 9 is a cross-sectional view showing a modification of the control device 8 of FIG.
The case 80 shown in FIG. 9 is similar to the case 80 shown in FIG. 8 except that a partition wall 83 is added. The partition wall 83 is installed inside the housing 81 and separates the interior space of the housing 81 into upper and lower sections. A circuit board 9 and a three-dimensionally molded insulator 1 are accommodated in the space below the partition wall 83. A circuit board 7 separate from the circuit board 9 is accommodated in the space above the partition wall 83. The circuit board 7 includes a wiring board 71 and a semiconductor element 72. By accommodating such a circuit board 7 in the same space as the circuit board 9, the height of the case 80 can be minimized while enhancing the functionality of the control device 8.

 なお、図9に示す蓋部82の下面には、別の平板状絶縁シート2が設けられている。この平板状絶縁シート2は、平板状をなしている。このような平板状絶縁シート2を設けることにより、回路基板7と蓋部82との間に必要な空間距離の短縮を図ることができる。これにより、ケース80の高さをさらに抑えることができる。 In addition, another flat insulating sheet 2 is provided on the underside of the lid portion 82 shown in Figure 9. This flat insulating sheet 2 has a flat plate shape. By providing such a flat insulating sheet 2, the required spatial distance between the circuit board 7 and the lid portion 82 can be shortened. This allows the height of the case 80 to be further reduced.

 以上のように、三次元成形絶縁体1および平板状絶縁シート2を併用することで、制御装置8の高機能化と小型化とを両立させることができる。 As described above, by using the three-dimensional molded insulator 1 and the flat insulating sheet 2 together, it is possible to achieve both high functionality and compactness in the control device 8.

6.前記実施形態が奏する効果
 前記実施形態に係る三次元成形絶縁体1は、電圧が印加される部品に被せられる三次元成形絶縁体である。このような三次元成形絶縁体1は、凹部12を有する形状に成形されている。凹部12は、底部12a、および、底部12aの端部に設けられている壁部12b、を含む。そして、三次元成形絶縁体1は、凹部12内に部品が挿入された状態で用いられる。
6. Advantages of the Present Embodiment The three-dimensionally shaped insulator 1 according to the present embodiment is a three-dimensionally shaped insulator that is placed over a component to which voltage is applied. Such a three-dimensionally shaped insulator 1 is molded into a shape having a recess 12. The recess 12 includes a bottom 12a and a wall 12b provided at an end of the bottom 12a. The three-dimensionally shaped insulator 1 is used with a component inserted into the recess 12.

 このような構成によれば、電圧が印加される部品に合わせて凹部12を設けることにより、部品の周囲に生じるデッドスペースを縮小できる。これにより、部品が収容される空間の有効利用が可能になる。その結果、部品を搭載する機器の小型化を図ることができる。 With this configuration, by providing recesses 12 that align with the components to which voltage is applied, it is possible to reduce the dead space that occurs around the components. This allows for more efficient use of the space in which the components are housed. As a result, it is possible to miniaturize the equipment in which the components are mounted.

 また、部品と、部品が搭載されている配線基板90(基板)と、を備える回路基板9に被せて用いられてもよい。この場合、三次元成形絶縁体1は、凹部12と、凹部12に接続されている平坦部11と、を有する形状に成形されていることが好ましい。 It may also be used by placing it over a circuit board 9 that includes components and a wiring board 90 (substrate) on which the components are mounted. In this case, the three-dimensionally molded insulator 1 is preferably molded into a shape that has a recess 12 and a flat portion 11 connected to the recess 12.

 このような構成によれば、配線基板90に搭載されている部品に合わせて凹部12を設けることにより、回路基板9と三次元成形絶縁体1との間(部品の周囲)に生じるデッドスペースを縮小できる。これにより、回路基板9が収容される空間の有効利用が可能になる。その結果、回路基板9を搭載する機器の小型化を図ることができる。 With this configuration, by providing recesses 12 that fit the components mounted on the wiring board 90, it is possible to reduce the dead space that occurs between the circuit board 9 and the three-dimensionally molded insulator 1 (around the components). This allows for more effective use of the space in which the circuit board 9 is housed. As a result, it is possible to reduce the size of the device in which the circuit board 9 is mounted.

 また、前記実施形態に係る三次元成形絶縁体1は、平坦部11を厚さ方向に貫通する貫通孔13を有する。 Furthermore, the three-dimensionally molded insulator 1 according to the embodiment has a through hole 13 that penetrates the flat portion 11 in the thickness direction.

 このような構成によれば、貫通孔13に合わせて固定ビス94等を設けた場合、三次元成形絶縁体1を回路基板9に被せた状態でも、固定ビス94の回転操作が可能になる。このため、三次元成形絶縁体1を回路基板9に被せた状態で、回路基板9をケース等にビス止めすることが可能になり、組立作業性が向上する。 With this configuration, when a fixing screw 94 or the like is provided in line with the through hole 13, the fixing screw 94 can be rotated even when the three-dimensional molded insulator 1 is placed over the circuit board 9. This makes it possible to screw the circuit board 9 to a case or the like with the three-dimensional molded insulator 1 placed over the circuit board 9, improving assembly workability.

 また、壁部12bの厚さt12bは、平坦部11の厚さt11の20%以上95%以下であることが好ましい。 Furthermore, it is preferable that the thickness t12b of the wall portion 12b be 20% or more and 95% or less of the thickness t11 of the flat portion 11.

 このような構成によれば、壁部12bは、凹部12の形状を支えるのに十分な剛性を有するとともに、凹部12の側方におけるデッドスペースのさらなる縮小に寄与できる。 With this configuration, the wall portion 12b has sufficient rigidity to support the shape of the recess 12 and can contribute to further reducing the dead space on the sides of the recess 12.

 また、平坦部11の厚さt11は、0.05mm以上1.00mm以下であることが好ましい。 Furthermore, it is preferable that the thickness t11 of the flat portion 11 be 0.05 mm or more and 1.00 mm or less.

 このような構成によれば、難燃性、耐トラッキング性および絶縁性に優れるとともに、比較的製造しやすい三次元成形絶縁体1が得られる。 This configuration results in a three-dimensional molded insulator 1 that is excellent in flame retardancy, tracking resistance, and insulation, and is relatively easy to manufacture.

 また、前記実施形態に係る三次元成形絶縁体1は、難燃剤を含んでいてもよい。
 このような構成によれば、難燃性に優れる三次元成形絶縁体1が得られる。
The three-dimensionally molded insulator 1 according to the embodiment may also contain a flame retardant.
With this configuration, a three-dimensional molded insulator 1 having excellent flame retardancy can be obtained.

 また、前記実施形態に係る三次元成形絶縁体1は、熱可塑性樹脂を主材料とすることが好ましい。 Furthermore, it is preferable that the three-dimensional molded insulator 1 according to the above embodiment is primarily made of thermoplastic resin.

 熱可塑性樹脂を主材料とするシートは、熱による塑性変形が可能であり、二次加工性に優れる。このため、熱成形で製造可能であり、製造容易性に優れる三次元成形絶縁体1が得られる。 Sheets made primarily of thermoplastic resin are capable of plastic deformation due to heat, making them suitable for secondary processing. This allows them to be manufactured by thermoforming, resulting in a three-dimensionally molded insulator 1 that is easy to manufacture.

 また、熱可塑性樹脂は、芳香族ポリカーボネート樹脂を含んでいてもよい。
 このような構成によれば、芳香環構造に由来する優れた耐熱性および難燃性を有する三次元成形絶縁体1が得られる。
The thermoplastic resin may also contain an aromatic polycarbonate resin.
With this configuration, the three-dimensional molded insulator 1 can be obtained, which has excellent heat resistance and flame retardancy due to the aromatic ring structure.

 また、前記実施形態に係る三次元成形絶縁体1は、ASTM D3638に準拠して測定された耐トラッキング性の指標となる比較トラッキング指数CTIが、600V以上であることが好ましい。 Furthermore, the three-dimensionally molded insulator 1 according to the above embodiment preferably has a comparative tracking index (CTI), which is an index of tracking resistance measured in accordance with ASTM D3638, of 600 V or more.

 このような構成によれば、耐トラッキング性が特に良好な三次元成形絶縁体1が得られる。 This configuration results in a three-dimensional molded insulator 1 with particularly good tracking resistance.

 また、前記実施形態に係る三次元成形絶縁体1は、UL94規格に準拠して判定された難燃性のランクが、試験片厚み0.4mm以上においてV-0またはVTM-0であることが好ましい。
 このような構成によれば、難燃性が特に良好な三次元成形絶縁体1が得られる。
Furthermore, the three-dimensionally molded insulator 1 according to the embodiment preferably has a flame retardancy rank determined in accordance with the UL94 standard of V-0 or VTM-0 for test specimens with a thickness of 0.4 mm or more.
With this configuration, a three-dimensional molded insulator 1 having particularly good flame retardancy can be obtained.

 また、前記実施形態に係る三次元成形絶縁体の製造方法は、三次元成形絶縁体1の製造方法であって、平坦な形状をなす熱可塑性絶縁シートに対し、熱成形を含む二次加工を行い、凹部12を形成する。
 このような構成によれば、形状精度が高い三次元成形絶縁体を製造することができる。
Furthermore, the manufacturing method of the three-dimensional molded insulator according to the above embodiment is a manufacturing method of the three-dimensional molded insulator 1, in which a flat thermoplastic insulating sheet is subjected to secondary processing including thermoforming to form the recess 12.
With this configuration, it is possible to manufacture a three-dimensionally molded insulator with high shape accuracy.

 また、熱成形は、真空成形または真空圧空成形であることが好ましい。
 このような構成によれば、形状精度が特に高い三次元成形絶縁体を製造することができる。
The thermoforming is preferably vacuum forming or vacuum/pressure forming.
With this configuration, it is possible to manufacture a three-dimensionally molded insulator with particularly high shape accuracy.

 以上、本発明の三次元成形絶縁体および三次元成形絶縁体の製造方法について説明したが、本発明は、前記実施形態に限定されない。 The above describes the three-dimensionally molded insulator and the method for manufacturing the three-dimensionally molded insulator of the present invention, but the present invention is not limited to the above-described embodiment.

 例えば、本発明の三次元成形絶縁体には、前記実施形態に記載の添加物とは別の添加物が添加されていてもよい。 For example, the three-dimensionally molded insulator of the present invention may contain additives other than those described in the above embodiment.

 また、本発明の三次元成形絶縁体は、前記実施形態に記載の層構成に対し、任意の機能を有する層、例えば、粘着層、接着層、保護層、離型層等が追加されてもよい。 Furthermore, the three-dimensionally molded insulator of the present invention may have layers with any desired function added to the layer structure described in the above embodiment, such as an adhesive layer, bonding layer, protective layer, or release layer.

 さらに、本発明の三次元成形絶縁体の製造方法は、前記実施形態に任意の目的の工程が付加されてもよい。 Furthermore, the method for manufacturing a three-dimensionally molded insulator of the present invention may include any additional steps for any purpose added to the above embodiment.

 本発明によれば、電圧印加部品の周囲に生じるデッドスペースを縮小でき、電圧印加部品が収容される空間の有効利用を可能にする三次元成形絶縁体が得られる。また、本発明によれば、形状精度の高い三次元成形絶縁体を製造することができる。したがって、本発明は、産業上の利用可能性を有する。 The present invention provides a three-dimensionally molded insulator that can reduce the dead space that occurs around voltage-applied components and enable effective use of the space in which the voltage-applied components are housed. Furthermore, the present invention makes it possible to manufacture three-dimensionally molded insulators with high shape accuracy. Therefore, the present invention has industrial applicability.

1      三次元成形絶縁体
2      平板状絶縁シート
7      回路基板
8      制御装置
9      回路基板
11     平坦部
12     凹部
13     貫通孔
71     配線基板
72     半導体素子
80     ケース
81     ハウジング
82     蓋部
83     隔壁
85     放熱シート
90     配線基板
91     パワー半導体素子
92     バスバー
93     信号用コネクター
94     固定ビス
101    第1層
102    第2層
103    中間層
110    平坦面
121    凹部
122    凹部
123    凹部
901    絶縁層
902    配線層
903    貫通配線
904    サーマルビア
921    バスバー
922    バスバー
L1     空間距離
S1     離間距離
S2     離間距離
S3     離間距離
S4     離間距離
SP     スペース
1 Three-dimensionally molded insulator 2 Flat insulating sheet 7 Circuit board 8 Control device 9 Circuit board 11 Flat portion 12 Recess 13 Through hole 71 Wiring board 72 Semiconductor element 80 Case 81 Housing 82 Lid portion 83 Partition wall 85 Heat dissipation sheet 90 Wiring board 91 Power semiconductor element 92 Bus bar 93 Signal connector 94 Fixing screw 101 First layer 102 Second layer 103 Intermediate layer 110 Flat surface 121 Recess 122 Recess 123 Recess 901 Insulating layer 902 Wiring layer 903 Through wiring 904 Thermal via 921 Bus bar 922 Bus bar L1 Spatial distance S1 Separation distance S2 Separation distance S3 Separation distance S4 Separation distance SP Space

Claims (12)

 電圧が印加される部品に被せられる三次元成形絶縁体であって、
 底部、および、前記底部の端部に設けられている壁部、を含む凹部を有する形状に成形されており、
 前記凹部内に前記部品が挿入された状態で用いられることを特徴とする三次元成形絶縁体。
A three-dimensionally shaped insulator that is placed over a component to which voltage is applied,
The container is molded into a shape having a recess including a bottom and a wall portion provided at an end of the bottom,
A three-dimensionally molded insulator characterized in that the component is inserted into the recess when used.
 前記部品と、前記部品が搭載されている基板と、を備える回路基板に被せて用いられ、
 前記凹部と、前記凹部に接続されている平坦部と、を有する形状に成形されている請求項1に記載の三次元成形絶縁体。
The component is used by being placed over a circuit board including the component and a board on which the component is mounted,
The three-dimensionally molded insulator according to claim 1 , which is molded into a shape having the recess and a flat portion connected to the recess.
 前記平坦部を厚さ方向に貫通する貫通孔を有する請求項2に記載の三次元成形絶縁体。 The three-dimensionally molded insulator according to claim 2, having a through hole penetrating the flat portion in the thickness direction.  前記壁部の厚さは、前記平坦部の厚さの20%以上95%以下である請求項3に記載の三次元成形絶縁体。 The three-dimensionally molded insulator described in claim 3, wherein the thickness of the wall portion is 20% or more and 95% or less of the thickness of the flat portion.  前記平坦部の厚さは、0.05mm以上1.00mm以下である請求項3または4に記載の三次元成形絶縁体。 The three-dimensionally molded insulator according to claim 3 or 4, wherein the thickness of the flat portion is 0.05 mm or more and 1.00 mm or less.  難燃剤を含む請求項1ないし4のいずれか1項に記載の三次元成形絶縁体。 A three-dimensionally molded insulator according to any one of claims 1 to 4, which contains a flame retardant.  熱可塑性樹脂を主材料とする請求項1ないし4のいずれか1項に記載の三次元成形絶縁体。 A three-dimensional molded insulator according to any one of claims 1 to 4, whose main material is a thermoplastic resin.  前記熱可塑性樹脂は、芳香族ポリカーボネート樹脂を含む請求項7に記載の三次元成形絶縁体。 The three-dimensionally molded insulator according to claim 7, wherein the thermoplastic resin includes an aromatic polycarbonate resin.  ASTM D3638に準拠して測定された耐トラッキング性の指標となる比較トラッキング指数CTIが、600V以上である請求項1ないし4のいずれか1項に記載の三次元成形絶縁体。 A three-dimensionally molded insulator according to any one of claims 1 to 4, having a comparative tracking index (CTI), an indicator of tracking resistance, measured in accordance with ASTM D3638, of 600 V or more.  UL94規格に準拠して測定された難燃性が、試験片厚み0.4mm以上においてV-0またはVTM-0である請求項1ないし4のいずれか1項に記載の三次元成形絶縁体。 A three-dimensionally molded insulator according to any one of claims 1 to 4, whose flame retardancy measured in accordance with the UL94 standard is V-0 or VTM-0 for test specimens with a thickness of 0.4 mm or more.  請求項1ないし4のいずれか1項に記載の三次元成形絶縁体の製造方法であって、
 平坦な形状をなす熱可塑性絶縁シートに対し、熱成形を含む二次加工を行い、前記凹部を形成することを特徴とする三次元成形絶縁体の製造方法。
A method for manufacturing the three-dimensionally shaped insulator according to any one of claims 1 to 4, comprising the steps of:
A method for manufacturing a three-dimensional molded insulator, characterized in that a flat thermoplastic insulating sheet is subjected to secondary processing including thermoforming to form the recesses.
 前記熱成形は、真空成形または真空圧空成形である請求項11に記載の三次元成形絶縁体の製造方法。 The method for manufacturing a three-dimensionally formed insulator described in claim 11, wherein the thermoforming is vacuum forming or vacuum-pressure forming.
PCT/JP2025/004252 2024-02-08 2025-02-07 Three-dimensional molded insulator and method for manufacturing three-dimensional molded insulator Pending WO2025170076A1 (en)

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PCT/JP2025/004252 Pending WO2025170076A1 (en) 2024-02-08 2025-02-07 Three-dimensional molded insulator and method for manufacturing three-dimensional molded insulator

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JP (1) JP7704232B1 (en)
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002030209A (en) * 2000-07-14 2002-01-31 Sumitomo Bakelite Co Ltd Flame-retardant resin composition
US7008240B1 (en) * 2004-04-16 2006-03-07 Super Talent Electronics, Inc. PC card assembly
JP2008033559A (en) * 2006-07-27 2008-02-14 Denso Corp Electronic equipment
JP2014057040A (en) * 2012-08-16 2014-03-27 Sumitomo Bakelite Co Ltd Film for electromagnetic wave shield and method for coating electronic component
JP2016006808A (en) * 2014-05-26 2016-01-14 住友ベークライト株式会社 Electromagnetic wave shielding film and electronic component mounting board

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002030209A (en) * 2000-07-14 2002-01-31 Sumitomo Bakelite Co Ltd Flame-retardant resin composition
US7008240B1 (en) * 2004-04-16 2006-03-07 Super Talent Electronics, Inc. PC card assembly
JP2008033559A (en) * 2006-07-27 2008-02-14 Denso Corp Electronic equipment
JP2014057040A (en) * 2012-08-16 2014-03-27 Sumitomo Bakelite Co Ltd Film for electromagnetic wave shield and method for coating electronic component
JP2016006808A (en) * 2014-05-26 2016-01-14 住友ベークライト株式会社 Electromagnetic wave shielding film and electronic component mounting board

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