WO2024203030A1 - Joined body manufacturing method and structure set - Google Patents

Abstract

The present invention addresses the problem of providing: a manufacturing method for a joined body which exhibits excellent joining strength even within a short joining time; and a structure set used for manufacturing the joined body. This manufacturing method for a joined body includes: a step for obtaining a first structure having first conductive nanowires, by providing a plurality of first conductive nanowires in a first conductive region that is on the surface of a first member; a step for obtaining a second structure having second conductive nanowires, by providing a plurality of second conductive nanowires in a second conductive region that is on the surface of a second member; and a joining step for joining the first structure and the second structure by disposing the first conductive nanowires and the second conductive nanowires so as to contact each other. The arithmetic average length of exposed portions of the plurality of first conductive nanowires and the arithmetic average length of exposed portions of the plurality of second conductive nanowires are both 1-40 μm.

Description

Method for manufacturing joined body and structure set

The present invention relates to a method for manufacturing a joint and a structure set.

Currently, various methods are used for electrically connecting electronic components such as semiconductor elements to each other and for electrically connecting electronic components to circuit boards.
As a method for electrically connecting such electronic components, Patent Document 1 discloses a method in which a number of nanowires provided on a first component, which is an electronic component, are brought into contact with a second component, which is also an electronic component, and then heated to bond the first component and the second component via the nanowires (Claim 1, etc.).

Special Publication No. 2021-503185

The inventors used the method described in Patent Document 1 to bond a first structure to a second structure not provided with conductive nanowires via conductive nanowires provided on the first structure, and found that when the bonding time was short, sufficient bonding strength was not obtained, indicating that there was room for improvement.

The present invention aims to provide a method for manufacturing a bonded body that has excellent bonding strength even when the bonding time is short, and a structure set for use in manufacturing the bonded body.

As a result of intensive research to solve the above-mentioned problems, the inventors have discovered that when a first structure having a plurality of first conductive nanowires and a second structure having a plurality of second conductive nanowires are used and the first structure and the second structure are joined by arranging the first conductive nanowires and the second conductive nanowires so that they are in contact with each other, a joined body with excellent joining strength can be obtained even if the joining time is short, so long as the arithmetic mean length of the exposed portions of the plurality of first conductive nanowires and the arithmetic mean length of the exposed portions of the plurality of second conductive nanowires are predetermined values, and thus completed the present invention.
That is, the present inventors have found that the above problems can be solved by the following configuration.

[1]
A method for producing a bonded body obtained by bonding a first structure and a second structure, comprising the steps of:
A step of providing a plurality of first conductive nanowires in a first conductive region of a first member having a surface thereof to obtain the first structure having the first conductive nanowires;
providing a plurality of second conductive nanowires in a second conductive region of a second member having a surface thereof to obtain the second structure having the second conductive nanowires;
a bonding step of bonding the first structure and the second structure by arranging the first conductive nanowire and the second conductive nanowire so as to be in contact with each other,
A method for producing a junction, wherein the arithmetic mean length of the exposed portions of the first conductive nanowires and the arithmetic mean length of the exposed portions of the second conductive nanowires are both 1 to 40 μm.
[2]
The method for producing a junction described in [1], wherein at least one of the following is satisfied: the standard deviation of the length of the exposed portion of the first conductive nanowire is 2 μm or less; and the standard deviation of the length of the exposed portion of the second conductive nanowire is 2 μm or less.
[3]
The method for producing a junction described in [1] or [2], wherein at least one of the following is satisfied: the first conductive nanowire has an average diameter of 45 to 75 nm; and the second conductive nanowire has an average diameter of 45 to 75 nm.
[4]
A method for producing a junction described in any of [1] to [3], which satisfies at least one of the following: the coverage area of the first conductive nanowire is 20 to 50% of the surface area of the first conductive region, and the coverage area of the second conductive nanowire is 20 to 50% of the surface area of the second conductive region.
[5]
The method for producing a junction described in any one of [1] to [4], which satisfies at least one of the following: the first conductive nanowire is erected on a surface of the first conductive region, and the second conductive nanowire is erected on a surface of the second conductive region.
[6]
The method further includes a heating step of heating the first and second conductive nanowires in contact with each other;
The method for producing a bonded body according to any one of [1] to [5], wherein the heating step is performed together with the bonding step, or the heating step is performed after the bonding step.
[7]
The method for producing a bonded body according to [6], wherein the heating temperature in the heating step is 150 to 300° C.
[8]
The method for producing a junction described in any of [1] to [4], which satisfies at least one of the following: the step of obtaining the first structure includes a process of adhering a composition containing the first conductive nanowire to the first conductive region; and the step of obtaining the second structure includes a process of adhering a composition containing the second conductive nanowire to the second conductive region.
[9]
The method for producing a bonded body according to any one of [1] to [8], wherein at least one of the first structure and the second structure includes a semiconductor element.
[10]
a first structure having a first conductive region, the first conductive nanowires being disposed in the first conductive region;
a second structure having a second conductive region, the second conductive nanowires being disposed in the second conductive region;
an arithmetic mean length of the exposed portions of the first conductive nanowires and an arithmetic mean length of the exposed portions of the second conductive nanowires are both 1 to 40 μm;
A set of structures used in manufacturing a joint.

The present invention provides a method for manufacturing a bonded body that has excellent bonding strength even when the bonding time is short, and a structure set for use in manufacturing the bonded body.

FIG. 2 is a schematic cross-sectional view showing an example of a first structure in the structure set of the present invention. FIG. 2 is a schematic cross-sectional view showing an example of a first structure in the structure set of the present invention. FIG. 2 is a schematic cross-sectional view showing an example of a first structure in the structure set of the present invention. FIG. 2 is a schematic cross-sectional view showing an example of a second structure in the structure set of the present invention. 3 is a schematic cross-sectional view showing an example of a step of forming a first structure in the method for producing a bonded body of the present invention. FIG. 3 is a schematic cross-sectional view showing an example of a step of forming a first structure in the method for producing a bonded body of the present invention. FIG. 3 is a schematic cross-sectional view showing an example of a step of forming a first structure in the method for producing a bonded body of the present invention. FIG. 3 is a schematic cross-sectional view showing an example of a step of forming a first structure in the method for producing a bonded body of the present invention. FIG. 3 is a schematic cross-sectional view showing an example of a step of forming a first structure in the method for producing a bonded body of the present invention. FIG. 3 is a schematic cross-sectional view showing an example of a step of forming a first structure in the method for producing a bonded body of the present invention. FIG. 3 is a schematic cross-sectional view showing an example of a step of forming a first structure in the method for producing a bonded body of the present invention. FIG. 3 is a schematic cross-sectional view showing an example of a step of forming a first structure in the method for producing a bonded body of the present invention. FIG. 3 is a schematic cross-sectional view showing an example of a bonding step in the manufacturing method of a bonded body of the present invention. FIG. 3 is a schematic cross-sectional view showing an example of a bonding step in the manufacturing method of a bonded body of the present invention. FIG. 1 is a schematic cross-sectional view showing an example of a bonded body obtained by a method for producing a bonded body of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a method for producing a bonded body according to the present invention and a structure set according to the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.
It should be noted that the drawings described below are illustrative for explaining the present invention, and the present invention is not limited to the drawings shown below.
In the following, the term "to" indicating a range of values includes the values written on both sides. For example, if ε is between α and β, the range of ε includes α and β, and expressed in mathematical notation, α≦ε≦β.
Unless otherwise specified, angles such as "perpendicular" include the generally acceptable error range in the relevant technical field. In addition, unless otherwise specified, the environment represented by temperature, humidity, or air pressure also includes the generally acceptable error range in the relevant technical field.

[Structure set]
The structure set of the present invention (hereinafter also referred to as "the present structure set") comprises a first structure having a first conductive region and a plurality of first conductive nanowires provided in the first conductive region, and a second structure having a second conductive region and a plurality of second conductive nanowires provided in the second conductive region, wherein the arithmetic mean length of the exposed portions of the plurality of first conductive nanowires and the arithmetic mean length of the exposed portions of the plurality of second conductive nanowires are both 1 to 40 μm, and is used for manufacturing a junction.
By using this structure set, a bonded body having excellent bonding strength can be obtained even if the bonding time is short. Although the details of the reason for this are not clear, it is generally assumed as follows.
In other words, since the arithmetic mean length of the exposed portions of the first conductive nanowires of the first structure and the arithmetic mean length of the exposed portions of the second conductive nanowires of the second structure are both predetermined values, the first conductive nanowires and the second conductive nanowires are sufficiently entangled even though the bonding process is short, and it is presumed that this results in excellent bonding strength of the bonded structure.

This structure set is used to manufacture a bonded body. Specifically, this structure set is used to manufacture a bonded body obtained by bonding a first structure and a second structure, and is preferably used in the bonding step in the manufacturing method of the bonded body of the present invention described below.

[First structure]
FIG. 1 is a schematic cross-sectional view showing an example of a first structure included in a structure set of the present invention.
The first structure 10 shown in FIG. 1 includes a first member 20 having a first conductive region 20a on its surface, and a plurality of first conductive nanowires 14 provided in a portion of the first conductive region 20a.

The first member 20 is a member having a first conductive region 20a on at least a portion of its surface, and examples thereof include a semiconductor element and a substrate having an electrode (for example, a wiring board and an interposer).
For example, when the first structure 10 includes the first member 20 that is a semiconductor element, the first structure 10 can be said to include a semiconductor element.

The first conductive region 20 a is a region made of a conductive material, and may be formed on at least a portion of the surface of the first member 20 .
The conductive material is not particularly limited, and may be a metal. Specific examples of the metal include gold (Au), silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), and nickel (Ni). From the viewpoint of electrical conductivity, copper, gold, aluminum, and nickel are preferred, copper and gold are more preferred, and copper is even more preferred.
In addition to metals, oxide conductive materials can be used. Examples of oxide conductive materials include indium-doped tin oxide (ITO). However, metals have superior ductility and other properties compared to oxide conductors, and are easily deformed, and are also easily deformed by compression during bonding, so it is preferable to use metal.
The conductor may also be made of a conductive resin containing nanoparticles of Cu or Ag, for example.

1, the first conductive nanowires 14 are erected on the surface of the first conductive region 20a. Specifically, the first conductive nanowires 14 extend in a direction intersecting the surface of the first conductive region 20a (i.e., in a direction along the thickness direction Dt of the first structure 10).
One end of each of the first conductive nanowires 14 is in contact with the first conductive region 20a.

The first conductive nanowire 14 has electrical conductivity. The first conductive nanowire 14 is made of a conductive material, and specific examples and preferred aspects of the conductive material are the same as the conductive material that makes up the first conductive region 20a.

The arithmetic mean length ha of the exposed portions of the first conductive nanowires 14 is 1 to 40 μm.
The arithmetic mean length ha of the exposed portions of the plurality of first conductive nanowires 14 is preferably 3 μm or more, and more preferably 5 μm or more, in terms of achieving better effects of the present invention.
The arithmetic mean length ha of the exposed portion of the first conductive nanowires 14 is preferably 20 μm or less, more preferably 10 μm or less. When the arithmetic mean length ha is 20 μm or less (particularly 10 μm or less), there is an advantage that there is less area (void portion) where no conductive nanowire exists when a bonded body is formed, so there is no need to fill the void with a resin or the like. In addition, there is an advantage that the formation time of the conductive nanowires can be shortened, and the removal time when removing the anodic oxide film described later can be shortened.

When the first conductive nanowires 14 are erected on the surface of the first conductive region 20a (see Figure 1), the arithmetic mean length ha can be determined by cutting the first structure 10 in the thickness direction Dt, obtaining a cross-sectional image of the cut surface using a field emission scanning electron microscope (FE-SEM), measuring the lengths of the exposed portions of 100 first conductive nanowires based on the cross-sectional image, and calculating the arithmetic mean value of these lengths as the length of the exposed portions of the first conductive nanowires 14 (i.e., the arithmetic mean length).
On the other hand, when the first conductive nanowires 14 are not erected in the first conductive region 20a (see Figure 3 described below), the arithmetic mean length ha can be determined by obtaining a surface image of the first conductive region 20a using a field emission scanning electron microscope (FE-SEM), measuring the lengths of the exposed portions of 100 first conductive nanowires based on the surface image, and calculating the arithmetic mean value of these lengths as the length of the exposed portions of the first conductive nanowires 14 (i.e., the arithmetic mean length).

In terms of obtaining superior effects of the present invention, the standard deviation of the length of the exposed portion of the first conductive nanowires 14 is preferably 2 μm or less, more preferably 1.5 μm or less, and even more preferably 1 μm or less.
The lower limit of the standard deviation of the length of the exposed portion of the first conductive nanowires 14 is 0.01 μm.
The standard deviation of the length of the exposed portion of the first conductive nanowire can be obtained by a method such as calculating from the length of the exposed portion of 100 first conductive nanowires that were used to measure the arithmetic mean length ha of the exposed portion of the first conductive nanowire 14.

The average diameter d of the first conductive nanowires 14 is preferably 45 to 75 nm, more preferably 45 to 60 nm, and even more preferably 50 to 60 nm. When the average diameter d is 45 nm or more, the strength of the conductive nanowires is superior. When the average diameter d is 75 nm or less, the nanowires are sufficiently entangled when bonded, resulting in superior bonding strength.
When the first conductive nanowires 14 are erected on the surface of the first conductive region 20a, the average diameter of the first conductive nanowires 14 can be determined by a method such as obtaining a surface image of the first conductive region 20a using a field emission scanning electron microscope (FE-SEM), measuring the diameters (equivalent circle diameters) of 100 first conductive nanowires based on the surface image, and calculating the arithmetic mean value of these diameters as the average diameter of the first conductive nanowires 14.
When the first conductive nanowires 14 are not erected in the first conductive region 20a, the average diameter of the first conductive nanowires 14 can be determined by cutting the first structure 10 in the thickness direction Dt, obtaining a cross-sectional image of the cut surface using a field emission scanning electron microscope (FE-SEM), measuring the diameters (circle equivalent diameters) of 100 first conductive nanowires based on the cross-sectional image, and calculating the arithmetic mean value of these diameters as the average diameter of the first conductive nanowires 14.

The coverage area of the first conductive nanowire 14 relative to the surface area of the first conductive region 20a is preferably 10 to 60%, and from the viewpoint of better effects of the present invention, it is more preferably 20 to 50%, even more preferably 30 to 50%, and particularly preferably 30 to 40%.
The coverage area of the first conductive nanowires 14 is determined by a method such as obtaining surface images of 10 different locations in the first conductive region 20a using a field emission scanning electron microscope (FE-SEM), calculating the coverage area (%) of the first conductive nanowires 14 relative to the surface area of the first conductive region 20a for each surface image, and taking the arithmetic mean value of these as the coverage area (%) of the first conductive nanowires 14 relative to the surface area of the first conductive region 20a.

In the example of FIG. 1, an embodiment in which all of the side surfaces of the plurality of first conductive nanowires 14 are exposed is shown, but the present invention is not limited to such an embodiment.
For example, as shown in FIG. 2, part of the side surface of the plurality of first conductive nanowires 14 may be covered with an insulating film or the like.
2, the first structure 10 further includes an insulating film 12 having electrical insulation properties, and the first conductive nanowires 14 penetrate the insulating film 12 in the thickness direction. In this case, one end of each of the first conductive nanowires 14 is in contact with the first conductive region 20a. The other end of each of the first conductive nanowires 14 protrudes from the surface 12a of the insulating film 12, and a portion of each of the first conductive nanowires 14 is exposed from the insulating film 12.

2, the insulating film 12 has a plurality of pores 13 penetrating in the thickness direction Dt. In the plurality of pores 13, first conductive nanowires 14 are provided.
The insulating film 12 is made of, for example, an inorganic material and has an electrical resistivity of, for example, about 10 ¹⁴ Ω·cm.
The term "made of an inorganic material" is used to distinguish it from a polymeric material, and is not limited to an insulating base material made of only inorganic materials, but is a specification that the insulating base material is mainly composed of inorganic materials (50 mass % or more). The insulating film 12 is made of, for example, an anodic oxide film.
The insulating film 12 may also be made of, for example, a metal oxide, a metal nitride, glass, ceramics such as silicon carbide or silicon nitride, a carbon base material such as diamond-like carbon, polyimide, a composite material thereof, etc. In addition to the above, the insulating film 12 may be, for example, a film formed on an organic material having through holes from an inorganic material containing 50 mass % or more of a ceramic material or a carbon material.

In the example of FIG. 1, a mode in which a plurality of first conductive nanowires 14 are erected on the surface of the first conductive region 20a is shown, but the present invention is not limited to such a mode.
For example, as shown in Figure 3, the multiple first conductive nanowires 14 may not be erected in the first conductive region 20a, but may be arranged along the in-plane direction of the first conductive region 20a (i.e., a direction intersecting the thickness direction Dt of the first structure 10).

[Second structure]
Fig. 4 is a schematic cross-sectional view showing an example of a second structure included in the structure set of the present invention. In Fig. 4, the same components as those shown in Fig. 1 are given the same reference numerals and their description will be omitted.
The second structure 100 shown in FIG. 4 has a second member 20 having a second conductive region 20a on its surface, and a plurality of second conductive nanowires 14 provided in a portion of the second conductive region 20a.
In the example of FIG. 4, a mode in which the second structure 100 does not have the insulating film 12 is shown, but the second structure 100 may have the insulating film 12 as in the example of FIG.

The arithmetic mean length ha of the exposed portions of the second conductive nanowires 14 is 1 to 40 μm. The preferred embodiment and method of measuring the arithmetic mean length ha of the exposed portions of the second conductive nanowires 14 are similar to the arithmetic mean length ha of the exposed portions of the first conductive nanowires 14, and therefore the description thereof is omitted.

The preferred embodiment and calculation method for the standard deviation of the length of the exposed portion of the second conductive nanowire 14 are similar to the standard deviation of the length of the exposed portion of the first conductive nanowire 14, so the explanation is omitted.

The preferred embodiment and method of measuring the average diameter d of the second conductive nanowires 14 are similar to those of the average diameter d of the first conductive nanowires 14, and therefore will not be described here.

The preferred embodiment and method of measuring the coverage area of the second conductive nanowires 14 relative to the surface area of the second conductive region 20a is similar to the coverage area of the first conductive nanowires 14 relative to the surface area of the first conductive region 20a, so a description thereof will be omitted.

In the example of FIG. 4, a plurality of second conductive nanowires 14 are erected on the surface of the second conductive region 20a, but similar to the embodiment shown in FIG. 3, the second conductive nanowires 14 may not be erected on the second conductive region 20a, but may be arranged along the in-plane direction of the second conductive region 20a.

[Preferred embodiment of structure set]
In terms of obtaining better effects of the present invention, it is preferable that the structure set has an aspect in which both of the first structure and the second structure have the structure shown in FIG. 1 (FIG. 4), or one of the first structure and the second structure has the structure shown in FIG. 1 (FIG. 4) and the other has the structure shown in FIG. 3, and it is more preferable that both have the structure shown in FIG. 1 (FIG. 4).

[Method of manufacturing the bonded body]
The method for producing a bonded body of the present invention (hereinafter also referred to as “the present production method”) is a method for producing a bonded body obtained by bonding a first structure and a second structure, the method comprising the steps of:
A step of providing a plurality of first conductive nanowires in a first conductive region of a first member having a surface thereof to obtain the first structure having the first conductive nanowires (hereinafter also referred to as a "first structure forming step");
A step of providing a plurality of second conductive nanowires in a second conductive region of a second member having a surface thereof to obtain the second structure having the second conductive nanowires (hereinafter also referred to as a "second structure forming step");
a bonding step of bonding the first structure and the second structure by arranging the first conductive nanowire and the second conductive nanowire so as to be in contact with each other,
The arithmetic mean length of the exposed portions of the first conductive nanowires and the arithmetic mean length of the exposed portions of the second conductive nanowires are both 1 to 40 μm.

According to the present manufacturing method, a bonded body having excellent bonding strength can be obtained even if the bonding time is short. Although the details of the reason for this are not clear, it is generally assumed as follows.
In other words, since the arithmetic mean length of the exposed portions of the first conductive nanowires of the first structure and the arithmetic mean length of the exposed portions of the second conductive nanowires of the second structure are both predetermined values, it is presumed that the first conductive nanowires and the second conductive nanowires are sufficiently entangled even if the bonding process is short, thereby resulting in excellent bonding strength of the bonded structure.

Below, an example of this manufacturing method is explained step by step with reference to the drawings.

[First structure formation step]

5 to 12 are schematic cross-sectional views showing an example of a first structure forming step in the present manufacturing method in the order of steps.
In one example of a method for manufacturing the first structure, a method for forming conductive nanowires using an anodized aluminum film will be described. In order to form the anodized aluminum film, an aluminum substrate is used. Therefore, in one example of a method for manufacturing the first structure, an aluminum substrate 30 is first prepared as shown in FIG.
The size and thickness of the aluminum substrate 30 are appropriately determined depending on the arithmetic mean length ha of the exposed portion of the first conductive nanowires 14 of the finally obtained structure 10 (see FIG. 1 ), the processing device, etc. The aluminum substrate 30 is, for example, a rectangular plate material. Note that the aluminum substrate 30 is not limited to an aluminum substrate, and any metal substrate capable of forming an electrically insulating insulating film 12 can be used.

The aluminum constituting the aluminum substrate 20 is not particularly limited, and specific examples thereof include pure aluminum and aluminum alloys containing aluminum as a main component and trace amounts of other elements.
The aluminum purity of the aluminum is preferably 99.5% by mass or more, more preferably 99.9% by mass or more, and even more preferably 99.99% by mass or more. When the aluminum purity is in the above range, the through-hole arrangement has sufficient regularity.

When forming an anodized film on the aluminum substrate 20, it is preferable that the surface to be anodized is previously subjected to a heat treatment, a degreasing treatment, and a mirror finish treatment.
Here, the heat treatment, degreasing treatment and mirror finish treatment can be the same as those described in paragraphs [0044] to [0054] of JP-A-2008-270158.

Next, one surface 30a (see FIG. 5) of the aluminum substrate 30 is anodized. As a result, one surface 30a (see FIG. 5) of the aluminum substrate 30 is anodized to form an insulating film 12 having a plurality of pores 13 extending in the thickness direction Dt of the aluminum substrate 30, i.e., an anodized film 15, as shown in FIG. 6. A barrier layer 31 exists at the bottom of each pore 13. The above-mentioned anodization process is called an anodization process.

The anodizing process can use a conventional method, but from the viewpoint of increasing the regularity of the arrangement of the through holes or the arrangement of the recesses, it is preferable to use a self-ordering method or a constant voltage treatment. Here, the self-ordering method and constant voltage treatment of the anodizing process can be the same as the respective treatments described in paragraphs [0056] to [0108] and FIG. 3 of JP2008-270158A.

In the insulating film 12 having a plurality of pores 13, as described above, the barrier layer 31 is present at the bottom of each of the pores 13, but the barrier layer 31 shown in Fig. 6 is removed. As a result, an insulating film 12 having a plurality of pores 13 without the barrier layer 31 (see Fig. 7) is obtained. The step of removing the barrier layer 31 described above is referred to as a barrier layer removal step.
In the barrier layer removal step, an alkaline aqueous solution containing ions of a metal M1 having a higher hydrogen overvoltage than aluminum is used to remove the barrier layer 31 of the insulating film 12, and at the same time, a metal layer 35a (see FIG. 7) made of a metal (metal M1) is formed on a surface 32d (see FIG. 7) of a bottom 32c (see FIG. 7) of the pore 13. As a result, the aluminum substrate 30 exposed in the pore 13 is covered with the metal layer 35a. As a result, when the pore 13 is filled with metal by plating, plating is facilitated, and the pore is prevented from being insufficiently filled with metal, and the pore is prevented from being unfilled with metal, thereby preventing defective formation of the first conductive nanowire 14.
The alkaline aqueous solution containing the ions of the metal M1 may further contain an aluminum ion-containing compound (sodium aluminate, aluminum hydroxide, aluminum oxide, etc.). The content of the aluminum ion-containing compound is preferably 0.1 to 20 g/L, more preferably 0.3 to 12 g/L, and even more preferably 0.5 to 6 g/L, calculated as the amount of aluminum ions.

In the barrier layer removal process, a metal layer 35a made of a metal (metal M1) is formed at the bottom of the pore 13, but this is not limited to this. For example, only the barrier layer 31 may be removed to expose the aluminum substrate 30 at the bottom of the pore 13, and the aluminum substrate 30 may be used as an electrode for electrolytic plating in the exposed state.

The barrier layer removal step may be performed by dry etching using a gas species such as Cl ₂ /Ar mixed gas.

Next, plating is performed from the surface 12a of the insulating film 12 having a plurality of pores 13 extending in the thickness direction Dt. In this case, the metal layer 35a can be used as an electrode for electrolytic plating. The plating uses a metal 35b, and the plating proceeds starting from the metal layer 35a formed on the surface 32d (see FIG. 7) of the bottom 32c (see FIG. 7) of the pore 13. As a result, as shown in FIG. 8, the inside of the pore 13 of the insulating film 12 is filled with the metal 35b constituting the first conductive nanowire 14. The first conductive nanowire 14 having conductivity is formed by filling the inside of the pore 13 with the metal 35b. The metal layer 35a and the metal 35b are collectively referred to as the filled metal 35.
The process of filling the pores 13 of the insulating film 12 with the metal 35b is called the metal filling process. As described above, the first conductive nanowires 14 are not limited to being made of metal, and any conductive material can be used. For example, electrolytic plating is used for the metal filling process. Note that the surface 12a of the insulating film 12 corresponds to one side of the insulating film 12.

The metal filling process is not limited to plating, and may be performed by using an inkjet method, a transfer method, a spray method, a screen printing method, or the like to fill the inside of the pores 13 with a conductive material.

9, after the metal filling step, the surface 12a of the insulating film 12 on the side where the aluminum substrate 30 is not provided is partially removed in the thickness direction Dt, and the metal 35 filled in the metal filling step is made to protrude from the surface 12a of the insulating film 12. That is, the first conductive nanowires 14 are made to protrude from the surface 12a of the insulating film 12. The step of making the first conductive nanowires 14 protrude from the surface 12a of the insulating film 12 is called a surface metal protrusion step.
By the surface metal protrusion step, the arithmetic mean length ha of the exposed portions of the plurality of first conductive nanowires 14 can be set within the above-mentioned range.

After the surface metal protruding step, the aluminum substrate 30 is removed as shown in Fig. 10. The step of removing the aluminum substrate 30 is called a substrate removing step.
In this embodiment, an example has been shown in which the substrate removing step is performed after the surface metal protruding step, but the present invention is not limited to this, and the substrate removing step may be performed before the surface metal protruding step.

After the substrate removal process, one surface 12a of the insulating film 12 and the surface of the first conductive region 20a of the first member 20 are arranged to face each other, and as shown in FIG. 11, the ends of the first conductive nanowires 14 protruding from the surface 12a of the insulating film 12 are connected to the first conductive region 20a. The process of connecting the first conductive nanowires 14 to the first conductive region 20a is called the member connection process.

In the member connecting step, the connection between the first conductive nanowires 14 and the first conductive region 20a is preferably performed by applying pressure.
The pressure conditions are not particularly limited, but are preferably 50 MPa or less, more preferably 30 MPa or less, and even more preferably 10 MPa or less. The lower limit of the pressure during pressing is preferably 1 MPa or more.
The pressing time is not particularly limited, but is preferably from 1 second to 60 minutes, and more preferably from 5 seconds to 10 minutes.

In the member bonding step, the connection between the first conductive nanowires 14 and the first conductive region 20a in the member connecting step is preferably performed under heating.
The heating temperature is preferably from 150 to 300° C., more preferably from 170 to 300° C., and even more preferably from 200 to 300° C. Heating may be performed so that the heating temperature is increased stepwise.
The heating time is not particularly limited, but is preferably from 1 second to 60 minutes, and more preferably from 5 seconds to 10 minutes.
The heating in the member bonding step is preferably carried out together with the above-mentioned pressure application.

After the member connecting step, the insulating film 12 is removed (see FIG. 12), thereby obtaining the first structure 10. The step of removing the insulating film 12 is called an insulating film removing step.
The method for removing the insulating film 12 is not particularly limited, but for example, the insulating film 12 can be dissolved and removed by etching. For the etching, a treatment liquid that dissolves the insulating film 12 but does not dissolve the first conductive nanowires 14 is used. When the insulating film 12 is made of aluminum oxide and the first conductive nanowires 14 are made of copper, for example, NaOH (sodium hydroxide) is used as the treatment liquid.
The method for removing the insulating film 12 is not limited to etching, and is not particularly limited as long as the insulating film 12 can be removed without damaging the first conductive nanowires 14 .

<Another embodiment of the first structure forming step>
The examples of Figures 5 to 12 show a method of obtaining a first structure 10 in which multiple first conductive nanowires 14 are erected on the surface of the first conductive region 20a, but the manufacturing method of the first structure 10 is not limited to this.
The first structure 10 in which multiple first conductive nanowires 14 are arranged along the in-plane direction of the first conductive region 20a, as shown in Figure 3, can be manufactured, for example, by a method of adhering a conductive composition containing the first conductive nanowires 14 to the surface of the first conductive region 20a in the first member 20.

(Conductive Composition)
The conductive composition includes first conductive nanowires 14 .
The content of the first conductive nanowires 14 is preferably 50 to 95 mass %, more preferably 70 to 95 mass %, and even more preferably 80 to 95 mass %, based on the total mass of the conductive composition.

The first conductive nanowires contained in the conductive composition can be obtained, for example, by removing all of the insulating film 12 during the surface metal protrusion process and then performing a substrate removal process.

The conductive composition may further include a polymeric material.
The polymeric material contained in the resin layer is not particularly limited, but is preferably a thermosetting resin because it can efficiently fill the gap between the structure and the object to be joined, such as a semiconductor chip or semiconductor wafer, and thereby improve adhesion between the structure and the semiconductor chip or semiconductor wafer.
Specific examples of the thermosetting resin include acrylonitrile resin, epoxy resin, phenol resin, polyimide resin, polyester resin, polyurethane resin, bismaleimide resin, melamine resin, and isocyanate resin.
Among these, it is preferable to use at least one of polyimide resin and epoxy resin, because this has improved insulation reliability and excellent chemical resistance.

When the conductive composition contains a polymeric material, the content of the polymeric material is preferably 5 to 50 mass %, more preferably 5 to 30 mass %, and even more preferably 5 to 20 mass %, relative to the total mass of the conductive composition.

The conductive composition may further include an antioxidant.
Specific examples of the antioxidant include 1,2,3,4-tetrazole, 5-amino-1,2,3,4-tetrazole, 5-methyl-1,2,3,4-tetrazole, 1H-tetrazole-5-acetic acid, 1H-tetrazole-5-succinic acid, 1,2,3-triazole, 4-amino-1,2,3-triazole, 4,5-diamino-1,2,3-triazole, 4-carboxy-1H-1,2,3-triazole, 4,5-dicarboxy-1H-1,2,3-triazole, 1H-1,2,3-triazole-4-acetic acid, 4-carboxy-5-carboxymethyl-1H-1,2,3-triazole, and 1,2,4-triazole. Examples of the benzotriazole include 1,2,4-triazole, 3-amino-1,2,4-triazole, 3,5-diamino-1,2,4-triazole, 3-carboxy-1,2,4-triazole, 3,5-dicarboxy-1,2,4-triazole, 1,2,4-triazole-3-acetic acid, 1H-benzotriazole, 1H-benzotriazole-5-carboxylic acid, benzofuroxan, 2,1,3-benzothiazole, o-phenylenediamine, m-phenylenediamine, catechol, o-aminophenol, 2-mercaptobenzothiazole, 2-mercaptobenzimidazole, 2-mercaptobenzoxazole, melamine, and derivatives thereof.
Of these, benzotriazole and its derivatives are preferred.
Benzotriazole derivatives include substituted benzotriazoles having a hydroxyl group, an alkoxy group (e.g., a methoxy group, an ethoxy group, etc.), an amino group, a nitro group, an alkyl group (e.g., a methyl group, an ethyl group, a butyl group, etc.), a halogen atom (e.g., a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, etc.) on the benzene ring of benzotriazole. In addition, naphthalenetriazole, naphthalenebistriazole, and similarly substituted naphthalenetriazoles and substituted naphthalenebistriazoles can also be mentioned.

Other examples of antioxidant materials contained in the resin layer include common antioxidants such as higher fatty acids, higher fatty acid copper salts, phenolic compounds, alkanolamines, hydroquinones, copper chelating agents, organic amines, and organic ammonium salts.

When the conductive composition contains an antioxidant material, the content of the antioxidant material is preferably 0.0001 mass% or more, and more preferably 0.001 mass% or more, based on the total mass of the conductive composition. In addition, in order to obtain an appropriate electrical resistance in this joining process, the content is preferably 5.0 mass% or less, and more preferably 2.5 mass% or less.

The conductive composition may further contain a migration inhibitor. The migration inhibitor can further improve insulation reliability by trapping metal ions, halogen ions, and metal ions originating from semiconductor chips and semiconductor wafers.

As a specific example of the migration prevention material, an ion exchanger, specifically a mixture of a cation exchanger and an anion exchanger, or a cation exchanger alone can be used.
The cation exchanger and the anion exchanger can be appropriately selected from, for example, inorganic ion exchangers and organic ion exchangers, respectively, which will be described later.

Examples of inorganic ion exchangers include hydrous oxides of metals, such as hydrous zirconium oxide.
Known types of metals include, for example, zirconium, iron, aluminum, tin, titanium, antimony, magnesium, beryllium, indium, chromium, and bismuth.
Among these, zirconium-based materials have the ability to exchange the cations Cu2 ⁺ and Al3 ⁺ .Furthermore, iron-based materials have the ability to exchange Ag ⁺ and Cu2 ⁺ .Similarly, tin-based, titanium-based, and antimony-based materials are cation exchangers.
On the other hand, bismuth-based materials have an exchange ability for the anion Cl ⁻ .
Zirconium-based materials also exhibit anion exchange capacity depending on the manufacturing conditions, as do aluminum-based and tin-based materials.
Other known inorganic ion exchangers include acid salts of polyvalent metals such as zirconium phosphate, heteropolyacid salts such as ammonium molybdophosphate, and synthetic products such as insoluble ferrocyanides.
Some of these inorganic ion exchangers are already commercially available. For example, various grades of IXE, a product name of Toagosei Co., Ltd., are known.
In addition to synthetic products, powders of inorganic ion exchangers such as natural zeolite or montmorillonite can also be used.

The organic ion exchanger includes crosslinked polystyrene having sulfonic acid groups as a cation exchanger, as well as those having carboxylic acid groups, phosphonic acid groups or phosphinic acid groups.
Examples of anion exchangers include crosslinked polystyrene having quaternary ammonium groups, quaternary phosphonium groups, or tertiary sulfonium groups.

These inorganic and organic ion exchangers may be appropriately selected in consideration of the types of cations and anions to be captured and the exchange capacity for those ions. Of course, inorganic and organic ion exchangers may be used in combination.
Since the manufacturing process of electronic devices includes a heating process, inorganic ion exchangers are preferred.

When the conductive composition contains a migration inhibitor, the content of the migration inhibitor is preferably 0.0001 mass% or more, more preferably 0.001 mass% or more, and even more preferably 0.001 mass% or more, based on the total mass of the conductive composition. The content of the migration inhibitor is preferably 3 mass% or less, more preferably 1 mass% or less, and even more preferably 0.5 mass% or less, based on the total mass of the conductive composition.

Furthermore, the mixing ratio of the ion exchanger to the above-mentioned polymer material is, for example, preferably 10 mass% or less of the ion exchanger from the viewpoint of mechanical strength, more preferably 5 mass% or less of the ion exchanger, and even more preferably 2.5 mass% or less of the ion exchanger. Furthermore, from the viewpoint of suppressing migration when the semiconductor chip or semiconductor wafer is bonded to the structure, it is preferable that the ion exchanger is 0.01 mass% or more.

The resin layer may further contain a curing agent.
When a hardener is included, from the viewpoint of suppressing poor bonding with the surface shape of the semiconductor chip or semiconductor wafer to be connected, it is more preferable to use a hardener that is liquid at room temperature rather than a hardener that is solid at room temperature.
Here, "solid at room temperature" refers to a substance that is solid at 25°C, for example, a substance whose melting point is higher than 25°C.

Specific examples of hardeners include aromatic amines such as diaminodiphenylmethane and diaminodiphenylsulfone, aliphatic amines, imidazole derivatives such as 4-methylimidazole, dicyandiamide, tetramethylguanidine, thiourea adduct amines, carboxylic acid anhydrides such as methylhexahydrophthalic anhydride, carboxylic acid hydrazides, carboxylic acid amides, polyphenol compounds, novolac resins, polymercaptans, etc., and from these hardeners, those that are liquid at 25°C can be appropriately selected and used. Note that the hardeners may be used alone or in combination of two or more types.

When the conductive composition contains a hardener, the content of the hardener is preferably 0.0001 mass% or more, and more preferably 0.001 mass% or more, relative to the total mass of the conductive composition. The content of the hardener is preferably 3 mass% or less, and more preferably 1 mass% or less, and even more preferably 0.5 mass% or less, relative to the total mass of the conductive composition.

The conductive composition may contain various additives, such as dispersants, buffers, viscosity adjusters, inorganic fillers, monomer components (e.g., bisallylphenol, etc.), and polymerization initiators (e.g., maleimide compounds, etc.), which are commonly added to the resin insulating films of semiconductor packages, to the extent that the properties of the conductive composition are not impaired.

(Attachment method)
Methods for applying a conductive composition to the surface of the first conductive region 20a of the first member 20 include, for example, inkjet printing, screen printing, jet printing, a dispenser, a jet dispenser, a comma coater, a slit coater, a die coater, a gravure coater, a slit coat, letterpress printing, intaglio printing, gravure printing, stencil printing, a bar coat, an applicator, a spray coater, and electrocoating.

The amount of conductive composition to be applied is not particularly limited, but for example, the conductive composition can be applied in an amount that results in a thickness of 1 to 100 μm.

After the conductive composition is applied to the surface of the first conductive region 20a, a step of drying the conductive composition may be included.
The drying method may be drying at room temperature, drying by heating, or drying under reduced pressure. For drying by heating or drying under reduced pressure, a hot plate, a hot air dryer, a hot air heating furnace, a nitrogen dryer, an infrared dryer, an infrared heating furnace, a far-infrared heating furnace, a microwave heating device, a laser heating device, an electromagnetic heating device, a heater heating device, a steam heating furnace, a hot plate press device, or the like may be used. It is preferable to adjust the drying temperature and time appropriately according to the type and amount of the dispersion medium used, and for example, it is preferable to dry at 50 to 300° C. for 1 to 180 minutes.
From the viewpoint of suppressing oxidation of the metal, drying may be performed in a non-oxidizing atmosphere or a reducing atmosphere, for example, by substitution or blowing with a non-oxidizing gas such as argon, nitrogen, or water vapor, or with hydrogen or formic acid.

[Second structure formation process]
A specific example of a method for producing the second structure 100 (second structure forming step) is the same as the above-mentioned first structure forming step, and therefore a description thereof will be omitted.

[Joining process]
13 to 15 are schematic cross-sectional views showing an example of a bonding step in the present manufacturing method in the order of steps.
In the bonding process, first, the surface of the first conductive region 20a on which the first conductive nanowire 14 is formed and the surface of the second conductive region 20a on which the second conductive nanowire 14 is formed are positioned to face each other (see Figure 13).

Next, the first structure 10 and the second structure 100 are brought close to each other and arranged so that the first conductive nanowires 14 and the second conductive nanowires 14 are in contact with each other, and bonding is started (see FIG. 14). In this case, it is preferable to apply pressure to the first structure 10 and the second structure 100 to bond them together.
The pressure conditions are not particularly limited, but are preferably 50 MPa or less, more preferably 30 MPa or less, and particularly preferably 10 MPa or less. The lower limit of the pressure during pressing is preferably 1 MPa or more.
The time for the bonding step is not particularly limited, but is preferably 1 second to 60 minutes, and more preferably 5 seconds to 10 minutes. When pressure is applied in the bonding step, the time for the bonding step corresponds to the pressure application time.

The atmosphere during bonding may be air, an inert gas such as nitrogen or argon, a reducing gas such as hydrogen or a carboxylic acid, or a mixture of these inert gases and reducing gases. The atmosphere during bonding may also be a reduced pressure atmosphere, including a vacuum atmosphere. Any of the above atmospheres can be achieved by known methods.

By carrying out each of the above steps, the first structure 10 and the second structure 100 are bonded together to obtain a bonded body 200 (see Figure 15).

[Heating process]
It is preferable that this manufacturing method further includes a heating step of heating the first conductive nanowire 14 and the second conductive nanowire 14 that are in contact with each other.
It is preferable that the heating step is performed simultaneously with the bonding step and/or after the bonding step.

The heating temperature is preferably from 150 to 300° C., more preferably from 170 to 300° C., and even more preferably from 200 to 300° C. The heating step may be carried out so that the heating temperature is changed stepwise.
The heating time is not particularly limited, but is preferably from 1 second to 60 minutes, and more preferably from 5 seconds to 10 minutes.

The bonding strength of the bonded body 200 obtained by this manufacturing method is preferably 5 MPa or more, more preferably 20 MPa or more, and even more preferably 30 MPa or more.
The bonding strength can be measured according to the method described in the Examples below.

The present invention is basically configured as described above. The structure set of the present invention and the manufacturing method of the bonded body of the present invention have been described in detail above, but the present invention is not limited to the above-mentioned embodiment, and various improvements and modifications may be made without departing from the spirit of the present invention.

The features of the present invention are explained in more detail below with reference to examples. The materials, reagents, amounts and proportions of substances, and operations shown in the following examples can be modified as appropriate without departing from the spirit of the present invention. Therefore, the scope of the present invention is not limited to the following examples.

[Example 1]
The bonded body of Example 1 was produced as follows.
[Step of forming first structure A]
<Preparation of Aluminum Substrate>
A molten metal was prepared using an aluminum alloy containing 0.06 mass% Si, 0.30 mass% Fe, 0.005 mass% Cu, 0.001 mass% Mn, 0.001 mass% Mg, 0.001 mass% Zn, 0.001 mass% Ti, and the remainder being Al and unavoidable impurities. The molten metal was treated and filtered, and an ingot having a thickness of 500 mm and a width of 1,200 mm was produced by DC (Direct Chill) casting.
Next, the surface was scraped off by an average thickness of 10 mm using a facing machine, and then the plate was soaked at 550°C for about 5 hours. When the temperature was lowered to 400°C, the plate was rolled into a 2.7 mm thick plate using a hot rolling machine.
Further, the sheet was heat-treated at 500° C. using a continuous annealing machine, and then cold-rolled to a thickness of 1.0 mm to obtain an aluminum substrate of JIS 1050 material.
This aluminum substrate was cut to a width of 1,030 mm and then subjected to the following treatments.

<Electrolytic polishing treatment>
The above-mentioned aluminum substrate was subjected to electrolytic polishing treatment using an electrolytic polishing solution having the following composition under conditions of a voltage of 25 V, a solution temperature of 65° C., and a solution flow rate of 3.0 m/min.
The cathode was a carbon electrode, and the power source was GP0110-30R (manufactured by Takasago Manufacturing Co., Ltd.) The flow rate of the electrolyte was measured using a vortex flow monitor FLM22-10PCW (manufactured by AS ONE Corporation).

(Electrolytic polishing solution composition)
85% by weight phosphoric acid (reagent manufactured by Wako Pure Chemical Industries, Ltd.) 660 mL
・160mL of purified water
・150mL sulfuric acid
・30mL ethylene glycol

<Anodizing process>
Next, the aluminum substrate after the electrolytic polishing treatment was subjected to anodizing treatment by a self-ordering method according to the procedure described in JP-A-2007-204802.
The aluminum substrate after electrolytic polishing was subjected to a pre-anodizing treatment for 5 hours in an electrolytic solution of 0.50 mol/L oxalic acid under conditions of a voltage of 40 V, a solution temperature of 16° C., and a solution flow rate of 3.0 m/min.
Thereafter, the aluminum substrate after the pre-anodizing treatment was subjected to a film removing treatment by immersing it in a mixed aqueous solution of 0.2 mol/L chromic anhydride and 0.6 mol/L phosphoric acid (liquid temperature: 50° C.) for 12 hours.
Thereafter, re-anodization was performed for 3 hours and 45 minutes in an electrolyte of 0.50 mol/L oxalic acid under conditions of a voltage of 40 V, a liquid temperature of 16° C., and a liquid flow rate of 3.0 m/min, to obtain an anodized film with a thickness of 30 μm.
In both the pre-anodizing treatment and the re-anodizing treatment, a stainless steel electrode was used as the cathode, and a GP0110-30R (manufactured by Takasago Manufacturing Co., Ltd.) was used as the power source. A NeoCool BD36 (manufactured by Yamato Scientific Co., Ltd.) was used as the cooling device, and a Pair Stirrer PS-100 (manufactured by EYELA Tokyo Rikakikai Co., Ltd.) was used as the stirring and heating device. Furthermore, the flow rate of the electrolyte was measured using a vortex flow monitor FLM22-10PCW (manufactured by AS ONE Corporation).

<Barrier Layer Removal Step>
Next, after the anodizing treatment step, an etching treatment was performed by immersing the aluminum substrate in an alkaline aqueous solution prepared by dissolving zinc oxide in an aqueous sodium hydroxide solution (50 g/l) to a concentration of 2000 ppm at 30° C. for 150 seconds, thereby removing the barrier layer at the bottom of the micropores (fine pores) of the anodized film and simultaneously depositing zinc on the exposed surface of the aluminum substrate.
The average thickness of the anodic oxide film after the barrier layer removal step was 10 μm.

<Metal filling process>
Next, electrolytic plating was carried out by using the aluminum substrate as the cathode and platinum as the anode.
Specifically, a metal-filled microstructure in which nickel was filled into the micropores was fabricated by constant current electrolysis using a copper plating solution having the composition shown below. Here, constant current electrolysis was performed using a plating device manufactured by Yamamoto Plating Tester Co., Ltd. and a power source (HZ-3000) manufactured by Hokuto Denko Corporation. After confirming the deposition potential by performing cyclic voltammetry in the plating solution, the treatment was performed under the conditions shown below.
(Copper plating solution composition and conditions)
・Copper sulfate 100g/L
Sulfuric acid 50g/L
Hydrochloric acid 15g/L
Temperature: 25℃
・Current density 10A/dm ²

The surface of the anodized film after the micropores were filled with metal was observed using a field emission scanning electron microscope (FE-SEM) to check whether 1,000 micropores were sealed with metal. The sealing rate (number of sealed micropores/1,000) was calculated to be 98%.
In addition, after filling the micropores with metal, the anodized film was cut in the thickness direction using a focused ion beam (FIB), and the cross section was photographed (magnification 50,000x) using a field emission scanning electron microscope (FE-SEM) to check the inside of the micropores. It was found that the inside of the sealed micropores was completely filled with metal.

<Substrate Removal Process>
The aluminum substrate was then dissolved and removed by immersion in a mixed solution of copper chloride/hydrochloric acid to produce a metal-filled microstructure having an average thickness of 10 μm.

<Surface metal protrusion process>
The metal-filled microstructure after the substrate removal step was immersed in an aqueous solution of sodium hydroxide (concentration: 5% by mass, liquid temperature: 20° C.) and the immersion time was adjusted to selectively dissolve the surface of the anodized film. Then, it was washed with water and dried, so that one end of the conductive nanowire was protruding from the anodized film.

<Component connection process>
The conductive nanowires of the metal-filled microstructure (i.e., the ends of the conductive nanowires protruding from the anodized film) were connected to the conductive region of the semiconductor element under pressure and heat to obtain a laminate (see FIG. 11). Note that the heating and pressing were performed under the conditions of a pressure of 30 MPa and a temperature of 250° C. for 10 minutes.

<Insulating film removal process>
The obtained laminate was immersed in an aqueous sodium hydroxide solution (concentration: 5 mass %, liquid temperature: 20° C.) to remove the anodized film from the laminate, thereby obtaining a first structure A in Example 1 (see FIGS. 1 and 12).
The arithmetic mean length ha of the exposed portion, the standard deviation of the length of the exposed portion, and the mean diameter d of the multiple conductive nanowires were determined according to the above-mentioned method. The coverage area of the conductive nanowires relative to the surface area of the first conductive region was also determined according to the above-mentioned method. These results are shown in Tables 1 and 2.

[Step of forming second structure A]
The second structure A in Example 1 was obtained in the same manner as in the formation of the first structure A in Example 1.

[Joining process]
First, a laminate obtained by laminating the first structure A and the second structure A was placed in the chamber of a wafer bonder (Bondtech WB-1000) so that the conductive nanowires in the first structure A and the conductive nanowires in the second structure A were in contact with each other. The inside of the chamber was once evacuated to 10 ⁻³ Pa, and then nitrogen gas containing 5% hydrogen was introduced into the chamber, and the pressure in the chamber was stabilized at 5 KPa. Thereafter, the laminate was pressurized and heated under conditions of a temperature of 200° C. and a pressure of 10 MPa, and this heated and pressurized state was maintained for 5 minutes. In this manner, a bonded body 1 of Example 1 was obtained.

[Example 2]
A first structure B was obtained in the same manner as the formation process of the first structure A in Example 1, except that the conditions of the anodization process were adjusted to change the nanopore diameter so that the coverage area and average diameter d were the values shown in the table.
Further, a second structure B was obtained in the same manner as in the formation process of the first structure B.
A bonded body 2 of Example 2 was obtained in the same manner as in Example 1, except that the obtained first structure B and second structure B were used.

[Example 3]
A bonded body 3 of Example 3 was obtained in the same manner as in Example 1, except that heating was not performed in the bonding step.

[Example 4]
A bonded body 4 of Example 4 was obtained in the same manner as in Example 1, except that the heating temperature in the bonding step was changed to 130°C.

[Example 5]
A bonded body 5 of Example 5 was obtained in the same manner as in Example 1, except that a second structure X prepared as described below was used instead of the second structure A, and heating was not performed in the bonding step.

[Step of forming second structure X]
Up to the substrate removal step, the steps of forming the first structure A in Example 1 were followed as a reference to obtain a metal-filled microstructure having an average thickness of 20 μm.
Next, the obtained metal-filled microstructure was immersed in an aqueous sodium hydroxide solution (concentration: 5% by mass, liquid temperature: 20° C.) to remove the anodized film, thus obtaining a conductive nanowire.
The obtained conductive nanowires (90 parts by mass), methyl ethyl ketone (5 parts by mass), ethyl acrylate-acrylonitrile copolymer (1.6 parts by mass), maleimide compound (2.2 parts by mass), and bisallylphenol (1.2 parts by mass) were mixed to obtain a paste-like conductive composition 1.
Next, the conductive composition 1 was applied to the conductive region of the semiconductor element so that the thickness of the conductive composition 1 was 10 μm, and then heated at 250° C. for 10 minutes to obtain a second structure X (see FIG. 3).

[Example 6]
A first structure C was obtained in the same manner as in the formation process of the first structure A in Example 1, except that the film thickness of the anodized film was adjusted so that the arithmetic mean length ha of the exposed portions of the multiple conductive nanowires became the value shown in the table.
Further, a second structure C was obtained in the same manner as in the formation process of the first structure C.
A bonded body 6 of Example 6 was obtained in the same manner as in Example 1, except that the obtained first structure C and second structure C were used.

[Example 7]
A first structure D was obtained in the same manner as the formation process of the first structure A in Example 1, except that the conditions of the anodization process were adjusted to change the nanopore diameter so that the coverage area and average diameter d were the values shown in the table.
Further, a second structure D was obtained in the same manner as in the formation process of the first structure D.
A bonded body 7 of Example 7 was obtained in the same manner as in Example 1, except that the obtained first structure D and second structure D were used.

[Example 8]
A first structure E was obtained in the same manner as the formation process of the first structure A in Example 1, except that the conditions of the anodization process were adjusted to change the nanopore diameter so that the coverage area and average diameter d were the values shown in the table.
Further, a second structure E was obtained in the same manner as in the formation process of the first structure E.
A bonded body 8 of Example 8 was obtained in the same manner as in Example 1, except that the obtained first structure E and second structure E were used.

[Examples 9 to 11]
Bonded bodies 9 to 11 of Examples 9 to 11 were obtained in the same manner as in Example 1, except that the heating temperature in the bonding step was changed as shown in the table.

[Example 12]
A bonded body 12 of Example 12 was obtained in the same manner as in Example 5, except that the heating temperature in the bonding step was changed as shown in the table.

[Example 13]
First structure F was obtained in the same manner as the formation process of first structure A in Example 1, except that the copper plating current density was adjusted in the metal filling process so that the standard deviation of the length of the exposed portion of the conductive nanowire became the value shown in the table.
A bonded body 13 of Example 13 was obtained in the same manner as in Example 1, except that the obtained first structure F and second structure A were used.

[Example 14]
First structure G was obtained in the same manner as the formation process of first structure A in Example 1, except that the copper plating current density was adjusted in the metal filling process so that the standard deviation of the length of the exposed portion of the conductive nanowire became the value shown in the table.
A bonded body 14 of Example 14 was obtained in the same manner as in Example 1, except that the obtained first structure G and second structure A were used.

[Example 15]
First structure H was obtained in the same manner as the formation process of first structure A in Example 1, except that the copper plating current density was adjusted in the metal filling process so that the standard deviation of the length of the exposed portion of the conductive nanowire became the value shown in the table.
A bonded body 15 of Example 15 was obtained in the same manner as in Example 1, except that the obtained first structure H and second structure A were used.

[Example 16]
A bonded body 16 of Example 16 was obtained in the same manner as in Example 1, except that the first structure A and the second structure C were used.

[Example 17]
The first structure I was obtained in the same manner as the formation process of the first structure A in Example 1, except that the conditions of the anodization process were adjusted to change the nanopore diameter so that the coverage area and average diameter d were the values shown in the table.
Further, a second structure I was obtained in the same manner as in the formation process of the first structure I.
A bonded body 17 of Example 17 was obtained in the same manner as in Example 1, except that the obtained first structure I and second structure I were used.

[Comparative Example 1]
A bonded body H1 of Comparative Example 1 was obtained in the same manner as in Example 1, except that a semiconductor element not provided with conductive nanowires was used instead of the second structure A.

[Comparative Example 2]
The first structure J was obtained in the same manner as in the formation process of the first structure A in Example 1, except that the film thickness of the anodized film was adjusted so that the arithmetic mean length ha of the exposed portions of the multiple conductive nanowires became the value shown in the table.
Further, a second structure J was obtained in the same manner as in the formation process of the first structure J.
A joined body H2 of Comparative Example 2 was obtained in the same manner as in Example 1, except that the obtained first structure J and second structure J were used.

[Comparative Example 3]
A bonded body H3 of Comparative Example 3 was obtained in the same manner as in Comparative Example 2, except that the second structure X was used instead of the second structure J.

[Evaluation test]
<Bonding strength>
The bond strength of each bonded body in the examples and comparative examples was evaluated by measuring the shear strength using a universal bond tester Dage-4000 (manufactured by Nordson Advanced Technology Co., Ltd.). The bond strength was calculated as the bond strength value per area of the semiconductor element from the obtained breaking load. The results are shown in Tables 1 and 2.

As shown in Tables 1 and 2, when the first structure and the second structure used are conductive nanowires in which the arithmetic mean length ha of the exposed portion satisfies a predetermined value, it has been shown that a bonded body having excellent bonding strength can be obtained even when the bonding time is short (Examples).
In contrast, when one of the first structure and the second structure did not have conductive nanowires, the bonding strength of the bonded structure was insufficient when the bonding time was short (Comparative Example 1).
Furthermore, when the first structure and the second structure used were those in which the arithmetic mean length ha of the exposed portion of the conductive nanowire did not satisfy a specified value, the bonding strength of the bonded body was insufficient when the bonding time was shortened (Comparative Examples 2 to 3).

10: First structure 12: Insulating film 12a: Surface 13: Pore 14: First conductive nanowire (second conductive nanowire)
15 Anodic oxide film 20 First member (second member)
20a First conductive region (second conductive region)
30 Aluminum substrate 31 Barrier layer 30a Surface 32c Bottom 32d Surface 35 Metal 35a Metal layer 35b Metal 100 Second structure 200 Bonded body Dt Thickness direction d Average diameter ha Arithmetic mean length

Claims (10)

A method for producing a bonded body obtained by bonding a first structure and a second structure, comprising the steps of:
A step of providing a plurality of first conductive nanowires in a first conductive region of a first member having a surface thereof to obtain the first structure having the first conductive nanowires;
providing a plurality of second conductive nanowires in a second conductive region of a second member having a surface thereof to obtain the second structure having the second conductive nanowires;
a bonding step of bonding the first structure and the second structure by arranging the first conductive nanowire and the second conductive nanowire so as to be in contact with each other,
A method for producing a junction, wherein the arithmetic mean length of the exposed portions of the first conductive nanowires and the arithmetic mean length of the exposed portions of the second conductive nanowires are both 1 to 40 μm. The method for manufacturing a junction according to claim 1, which satisfies at least one of the following: the standard deviation of the length of the exposed portion of the first conductive nanowire is 2 μm or less, and the standard deviation of the length of the exposed portion of the second conductive nanowire is 2 μm or less. The method for manufacturing a junction according to claim 1 or 2, wherein at least one of the following is satisfied: the first conductive nanowire has an average diameter of 45 to 75 nm, and the second conductive nanowire has an average diameter of 45 to 75 nm. The method for manufacturing a junction according to claim 1 or 2, which satisfies at least one of the following: the coverage area of the first conductive nanowire is 20 to 50% of the surface area of the first conductive region, and the coverage area of the second conductive nanowire is 20 to 50% of the surface area of the second conductive region. The method for manufacturing a junction according to claim 1 or 2, which satisfies at least one of the following: the first conductive nanowire is erected on the surface of the first conductive region, and the second conductive nanowire is erected on the surface of the second conductive region. The method further includes a heating step of heating the first conductive nanowire and the second conductive nanowire that are in contact with each other;
The method for producing a bonded body according to claim 1 , wherein at least one of the heating step is performed simultaneously with the bonding step and the heating step is performed after the bonding step. The method for manufacturing a joint body according to claim 6, wherein the heating temperature in the heating step is 150 to 300°C. The method for producing a junction according to claim 1 or 2, which satisfies at least one of the following: the step of obtaining the first structure includes a process of attaching a composition containing the first conductive nanowire to the first conductive region, and the step of obtaining the second structure includes a process of attaching a composition containing the second conductive nanowire to the second conductive region. The method for manufacturing a bonded body according to claim 1 or 2, wherein at least one of the first structure and the second structure includes a semiconductor element. a first structure having a first conductive region, the first conductive nanowires being disposed in the first conductive region;
a second structure having a second conductive region, the second structure having a plurality of second conductive nanowires disposed in the second conductive region;
an arithmetic mean length of the exposed portions of the first conductive nanowires and an arithmetic mean length of the exposed portions of the second conductive nanowires are both 1 to 40 μm;
A set of structures used in manufacturing a joint.

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