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WO2024249079A1 - Bague de retenue pour polissage chimico-mécanique - Google Patents

Bague de retenue pour polissage chimico-mécanique Download PDF

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Publication number
WO2024249079A1
WO2024249079A1 PCT/US2024/029445 US2024029445W WO2024249079A1 WO 2024249079 A1 WO2024249079 A1 WO 2024249079A1 US 2024029445 W US2024029445 W US 2024029445W WO 2024249079 A1 WO2024249079 A1 WO 2024249079A1
Authority
WO
WIPO (PCT)
Prior art keywords
retaining ring
wafer
filler
thermally conductive
ring according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/US2024/029445
Other languages
English (en)
Inventor
David Wilkinson
Steven WAMSLEY
Katie HAVENS
Clint Newell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Advanced Materials Inc
Original Assignee
Mitsubishi Chemical Advanced Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Advanced Materials Inc filed Critical Mitsubishi Chemical Advanced Materials Inc
Publication of WO2024249079A1 publication Critical patent/WO2024249079A1/fr
Anticipated expiration legal-status Critical
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B24B37/32—Retaining rings

Definitions

  • the present invention relates to a retaining ring used for chemical mechanical polishing.
  • CMP chemical mechanical polishing
  • VLSI very large scale integrated
  • ULFI ultra large scale integrated circuits
  • CMP chemical mechanical polishing
  • VLSI very large scale integrated
  • ULFI ultra large scale integrated
  • abrasive medium may include slurry solutions containing small abrasive particles, such as silicon dioxide, and chemically reactive substances, such as potassium hydroxide.
  • Typical chemical mechanical polishing processes include a carrier head that holds a wafer against a polishing pad.
  • carrier heads include a retaining ring used to hold the wafer within a given boundary.
  • known retaining rings are formed either completely of a metal construction or a metal backing with a ring portion of polymer or silicon dioxide. The ring portion typically contacts the polishing pad or surface and the semiconductor wafer. This contact, combined with the rotation and abrasives previously mentioned, generates heat and results in an increase in temperature. Over time, this increase in temperature can have adverse effects on the process, retaining ring, pad, and ultimately, the wafer substrate.
  • the elevated temperature of the ring in this localized area inherently softens the thermoplastic polymer and reduces the impact and wear resistance, increasing the likelihood of the inner groove formation.
  • This inner groove formation is detrimental to the CMP process and can cause wafer damage, poor yields and dramatically reduced consumable life.
  • GaAs gallium arsenide
  • SiC silicon carbide
  • one aspect of the present invention is to provide a thermoplastic based retaining ring that is thermally conductive and can transfer heat away from the interface region.
  • the retaining ring utilizes unique filler systems that allow the thermoplastic polymer to conduct the heat away from the surface contact area and transfer it into and away from the ring, thus maintaining a consistently lower temperature at the contact area between the ring and pad.
  • Lower operating temperatures will retard the wear rate of the ring and pad, resulting in better process uniformity, increased consumable life and better process yield.
  • lower temperatures at the wear surface also maintains the original impact strength of the material, which reduces the formation of the inner groove formation, maintaining process consistency and increasing yield.
  • the process life of the retaining ring is also a key performance indicator, since a ring that has increased wear resistance and hence longer life, will dramatically reduce consumable costs, and increase machine uptime, yield rates and process consistency.
  • the forementioned material compositions used to produce the retaining ring was developed to increase wear performance in addition to its thermally conductive characteristics. Wear studies have shown that this novel thermally conductive retaining ring composition also increases the life of the retaining ring by 300-400% under standard CMP operating conditions.
  • FIG. 1 is a schematic of a chemical mechanical polishing system
  • FIG. 2 is a detailed schematic of a chemical mechanical polishing system including an inside edge of a retaining ring before polishing of a wafer;
  • Fig. 3 is a detailed view of the inside edge of a retaining ring after polishing of the wafer.
  • Fig. 4 is a comparison of thickness loss and weight loss of a retaining ring of the present disclosure and alternative retaining rings.
  • a chemical mechanical polishing system 1 includes a platen 2 which holds a polishing pad 3.
  • a polishing slurry is supplied on the polishing pad via a slurry distribution system 4.
  • a carrier head 5 holds a wafer W to be processed by CMP, in which the wafer W is kept in place on a housing 50 of the carrier head 5 by a retaining ring 100.
  • the polishing pad 3 is rotated via the platen 2, the carrier head 5 is rotated, and a pressure is applied to the carrier head 5, so as to process the wafer W by CMP.
  • Fig. 2 shows the inside edge of the retaining ring 100 before CMP processing has begun.
  • Fig. 3 shows the wear of the inside edge of the retaining ring 100 after CMP processing.
  • the retaining ring 100 is made of a polymer, such as unfilled polyetheretherketone (PEEK).
  • a lubricant such as polytetrafluoroethylene (PTFE), carbon, polyimide (PI), and boron nitride, may be incorporated into the polymer.
  • the lubricant incorporated into the conventional polymer is at a low level.
  • One embodiment of the conventional art has boron nitride at l%-2% by weight of the retaining ring 100. Even with the addition of lubricant, the retaining ring 100 of the conventional art is still thermally insulative, resulting in increased temperature at the interface location between the retaining ring 100 and the wafer W during CMP processing.
  • the retaining ring of the present invention is formed of a thermally conductive material that transfers heat away from an interface region between the wafer W and the inside edge of the retaining ring 100.
  • the thermally conductive material is formed by adding a material filler, which is thermally conductive, to a base material when forming the retaining ring. It is believed that enough material filler is added to the base material so that the particles of the material filler in the retaining touch each other to create a heat path to transfer away the heat generated during the CMP processing, thereby presenting a crosslinked polymer.
  • the thermal conductivity of the retaining ring in a through plane of the retaining ring is between 0.5 W/mk and 20 W/mk. In another embodiment, the thermal conductivity in the through plane of the retaining ring is between 10 W/mk and 20 W/mk. In another embodiment, the thermal conductivity in the through plane of the retaining ring is between 2.0 W/mk and 10 W/mk. In another embodiment, the thermal conductivity in the through plane of the retaining ring is between 1.0 W/mk and 5 W/mk. [0020] In one embodiment, the thermal conductivity in plane, in flow, of the retaining ring is between 2.0 W/mk and 60 W/mk.
  • the thermal conductivity in plane, in flow, of the retaining ring is between 5.0 W/mk and 50 W/mk. In another embodiment, the thermal conductivity in plane, in flow, of the retaining ring is between 2.0 W/mk and 10 W/mk. In another embodiment, the thermal conductivity in plane, in flow, of the retaining ring is between 2.0 W/mk and 30 W/mk.
  • the base material may be a thermoplastic such as PEEK, polyphenylene sulfide (PPS), polyethylene terephthalate (PET), PI, polyamide-imide (PAI), aliphatic polyketone (PK), polyaryle ether ketones (PAEK), PTFE, polyphthalamide (PPA), liquid crystal polymers (LCP), polybutylene terephthalate (PBT), nylons such as PA6, PA66, PA12, thermoplastic polyurethane (TPU), rigid TPU, polyolefins, or similar polymers, and combinations thereof.
  • PEEK polyphenylene sulfide
  • PET polyethylene terephthalate
  • PI polyamide-imide
  • PAI polyamide-imide
  • PK aliphatic polyketone
  • PAEK polyaryle ether ketones
  • PTFE polyphthalamide
  • PPA polyphthalamide
  • LCP liquid crystal polymers
  • PBT polybutylene terephthalate
  • nylons such as
  • the material filler may be carbon, glass, polyimide, PAI, TiO 2 , ceramic, silica, alumina, boron nitride, diamond, aramid, aluminum oxide, aluminum nitride, pitch carbon fiber, polyacrylonitrile (PAN) carbon fiber, pitch graphite fiber, graphite fiber, graphite, and combinations thereof.
  • the material filler is boron nitride. Boron nitride provides good wear properties, is thermally conductive, and electrically insulative.
  • the material filler may be between 5% and 70% by weight of the material of the retaining ring.
  • the material filler may be between 10% and 70% by weight of the material of the retaining ring. In another embodiment, the material filler may be boron nitride which is 20%-40% by weight of the material of the retaining ring. In another embodiment, the material filler may be boron nitride which is 20%-60% by weight of the material of the retaining ring. In another embodiment, the material filler may be boron nitride which is 30%-40% by weight of the material of the retaining ring. In another embodiment, the material filler may be boron nitride which is 25%-50% by weight of the material of the retaining ring.
  • the material filler is a substantial portion of the material of the retaining ring of the present invention, thereby changing the properties of the material.
  • the material composition used to produce the retaining ring 100 was originally developed to increase wear performance, with the unexpected additional benefit of its thermally conductive characteristics.
  • thermoplastic polymer of the retaining ring 100 of the present invention is able to conduct the heat away from the surface contact area and transfer it into and away from the retaining ring, thus maintaining a consistently lower temperature at the contact area between the retaining ring 100 and the polishing pad 3.
  • Lower operating temperatures will retard the wear rate of the retaining ring 100 and the polishing pad 3, resulting in better process uniformity, increased consumable life and better process yield.
  • lower temperatures at the wear surface also maintains the original impact strength of the material, which reduces the formation of the inner groove, maintaining process consistency and increasing yield.
  • the process life of the retaining ring 100 is also a key performance indicator, since a ring that has increased wear resistance and hence longer life, will dramatically reduce consumable costs, and increase machine uptime, yield rates and process consistency.
  • the material composition used to produce the retaining ring 100 was developed to increase wear performance in addition to its thermally conductive characteristics. Wear studies have shown that this novel thermally conductive retaining ring composition, also increases the life of the retaining ring by 300-400% under standard CMP operating conditions.
  • Material 4 reduced thickness loss and reduced weight loss compared to a conventional retaining ring made of PEEK.
  • Material 4 is a thermally conductive material formed by a base material of PEEK and a material filler of boron nitride, in which the boron nitride is 30% by weight of material of the retaining ring.
  • the boron nitride is mechanically compounded into the PEEK polymer, and then molded into a shape and machined.
  • Retaining rings made of other materials are also evaluated compared to the retaining ring of the present invention and a conventional retaining ring made of PEEK.
  • Material 1 is PPS
  • Material 3 is a modified PPS
  • Material 5 is a modified PAI
  • Material 6 is a modified PEEK.
  • the data underlying the graphs in Fig. 4 is shown below.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention concerne une bague de retenue utilisée dans le traitement chimico-mécanique comprenant un matériau thermoconducteur formé par un matériau de base et une charge de matériau. La charge de matériau est comprise entre 10 % et 70 % en poids du matériau de la bague de retenue.
PCT/US2024/029445 2023-05-26 2024-05-15 Bague de retenue pour polissage chimico-mécanique Pending WO2024249079A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202363469304P 2023-05-26 2023-05-26
US63/469,304 2023-05-26

Publications (1)

Publication Number Publication Date
WO2024249079A1 true WO2024249079A1 (fr) 2024-12-05

Family

ID=93566024

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2024/029445 Pending WO2024249079A1 (fr) 2023-05-26 2024-05-15 Bague de retenue pour polissage chimico-mécanique

Country Status (3)

Country Link
US (1) US20240391051A1 (fr)
TW (1) TW202513227A (fr)
WO (1) WO2024249079A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6419567B1 (en) * 2000-08-14 2002-07-16 Semiconductor 300 Gmbh & Co. Kg Retaining ring for chemical-mechanical polishing (CMP) head, polishing apparatus, slurry cycle system, and method
US20050215181A1 (en) * 2004-03-19 2005-09-29 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring, apparatuses and methods incorporating same
WO2015006742A1 (fr) * 2013-07-11 2015-01-15 Entegris, Inc. Anneau de retenue revêtu pour polissage mécano-chimique
WO2016061544A1 (fr) * 2014-10-17 2016-04-21 Applied Materials, Inc. Tampons de polissage produits par un procédé de fabrication d'additifs

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6419567B1 (en) * 2000-08-14 2002-07-16 Semiconductor 300 Gmbh & Co. Kg Retaining ring for chemical-mechanical polishing (CMP) head, polishing apparatus, slurry cycle system, and method
US20050215181A1 (en) * 2004-03-19 2005-09-29 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring, apparatuses and methods incorporating same
WO2015006742A1 (fr) * 2013-07-11 2015-01-15 Entegris, Inc. Anneau de retenue revêtu pour polissage mécano-chimique
WO2016061544A1 (fr) * 2014-10-17 2016-04-21 Applied Materials, Inc. Tampons de polissage produits par un procédé de fabrication d'additifs

Also Published As

Publication number Publication date
US20240391051A1 (en) 2024-11-28
TW202513227A (zh) 2025-04-01

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