WO2024248360A1 - Method for forming gallium oxynitride layer - Google Patents

Abstract

The present invention provides a method for forming a gallium oxynitride (GaON) layer on a substrate, the method for forming a gallium oxynitride layer comprising the steps of: spraying a source material containing gallium (Ga); forming a gallium nitride layer by spraying a first reactant material containing nitrogen; and spraying a second reactant material containing oxygen onto the gallium nitride layer.

Description

Method for forming a gallium nitride layer

The present invention relates to a method for forming a gallium nitride layer.

Oxide semiconductors have the advantage of high mobility and can exhibit large resistance changes depending on the oxygen content, making it easy to obtain desired properties. In addition, since the oxide constituting the gallium nitride layer can be formed at a relatively low temperature during the manufacturing process of oxide semiconductors, the manufacturing cost is low.

There may be various methods for depositing oxide semiconductors. For example, the oxide semiconductor may be deposited using atomic layer deposition (ALD), chemical vapor deposition (CVD), etc. However, in the process of depositing the oxide semiconductor, if only one method is used, there is a problem that the film quality of the oxide semiconductor is uneven or that it takes a long time to form the oxide semiconductor.

Furthermore, when using, for example, atomic layer deposition (ALD) as a method for depositing an oxide semiconductor, the oxide semiconductor can be formed by depositing a source material and a reactant material. At this time, after completing the step of spraying the source material and the step of spraying the reactant material, unnecessary source material or reactant material may remain in the chamber, which may be a factor that inhibits the film quality of the oxide semiconductor.

The present invention has been designed to overcome the shortcomings of the aforementioned method for forming a gallium oxynitride layer, and aims to provide a method for forming a gallium oxynitride layer capable of forming an excellent film quality of the gallium oxynitride layer while reducing the time required for depositing the gallium oxynitride layer.

The present invention provides a method for forming a gallium nitride (GaON) layer on a substrate, the method comprising the steps of: spraying a source material containing gallium (Ga); spraying a first reactant material containing nitrogen to form a gallium nitride layer; and spraying a second reactant material containing oxygen on the gallium nitride layer.

The present invention provides a method for forming a gallium nitride layer, wherein the source material contains trimethyl gallium (TMGa).

The present invention provides a method for forming a gallium nitride layer, wherein the first reactant material contains either nitrogen (N ₂ ) or ammonia (NH ₃ ).

The present invention provides a method for forming a gallium nitride layer, wherein the second reactant material contains either oxygen (O ₂ ) or nitrous oxide (N ₂ O).

The present invention provides a method for forming a gallium nitride layer, further comprising a step of forming a plasma containing hydrogen (H ₂ ) gas or argon (Ar) gas between the step of injecting the source material and the step of injecting the first reactant material.

The present invention provides a method for forming a gallium nitride layer, which forms a plasma containing oxygen during the step of injecting the first reactant material.

The present invention provides a method for forming a gallium nitride layer, which further includes a step of forming a plasma containing hydrogen (H ₂ ) gas or argon (Ar) gas after the step of injecting the second reactant material.

The present invention provides a method for forming a gallium nitride (GaON) layer on a substrate, the method including the steps of spraying a source material containing gallium (Ga); spraying a first reactant material containing nitrogen; and spraying a second reactant material containing oxygen.

The present invention relates to a method for producing a gallium nitride layer, wherein the first source material contains trimethyl gallium (TMGa), the first reactant material contains one of nitrogen (N ₂ ) and ammonia (NH ₃ ), and the second reactant material contains one of oxygen (O ₂ ) and nitrous oxide (N ₂ O).

The present invention provides a method for forming a gallium nitride layer, which forms a plasma containing oxygen during the steps of injecting the first source material, the first reactant material, and the second reactant material.

The present invention provides a method for forming a gallium nitride layer, further comprising a step of forming a plasma containing hydrogen (H ₂ ) gas or argon (Ar) gas after the step of injecting the first source material, the step of injecting the first reactant material, and the step of injecting the second reactant material.

The present invention provides a method for forming a gallium oxynitride (GaON) layer on a substrate, comprising: forming a first gallium oxynitride layer; and forming a second gallium oxynitride layer on the first gallium oxynitride layer, wherein the step of forming one of the first gallium oxynitride layer and the second gallium oxynitride layer uses one of the gallium oxynitride layer forming methods described above, and the step of forming the other gallium oxynitride layer uses one of the gallium oxynitride layer forming methods described above.

The present invention provides a method for forming a gallium oxynitride layer, wherein the step of forming the first gallium oxynitride layer uses any one of the gallium oxynitride layer forming methods described above, and the step of forming the second gallium oxynitride layer uses any one of the gallium oxynitride layer forming methods described above.

The present invention provides a method for forming a gallium oxynitride layer, comprising the step of forming a third gallium oxynitride layer containing gallium nitride on the second gallium oxynitride layer, wherein the step of forming the third gallium oxynitride layer uses any one of the gallium oxynitride layer forming methods described above.

The present invention provides a method for forming a gallium oxynitride layer, wherein the step of forming the first gallium oxynitride layer uses any one of the gallium oxynitride layer forming methods described above, and the step of forming the second gallium oxynitride layer uses any one of the gallium oxynitride layer forming methods described above.

The present invention provides a method for forming a gallium oxynitride layer, comprising the step of forming a third gallium oxynitride layer containing gallium nitride on the second gallium oxynitride layer, wherein the step of forming the third gallium oxynitride layer uses any one of the gallium oxynitride layer forming methods described above.

According to the present invention with the above configuration, the following effects are achieved.

According to the present invention, the first gallium oxynitride layer is formed by atomic layer deposition (ALD), and the second gallium oxynitride layer is formed by chemical vapor deposition (CVD), so that the film quality of the gallium oxynitride layer including the first gallium oxynitride layer and the second gallium oxynitride layer can be improved, while also increasing the speed at which the gallium oxynitride layer is formed.

According to the present invention, the first gallium oxynitride layer is formed by atomic layer deposition (ALD), the second gallium oxynitride layer is formed by chemical vapor deposition (CVD), and the third gallium oxynitride layer is formed by atomic layer deposition (ALD), thereby making it possible to improve the film quality of the gallium oxynitride layers including the first gallium oxynitride layer to the third gallium oxynitride layer while also increasing the speed at which the gallium oxynitride layer is formed.

According to the present invention, when depositing the first gallium nitride layer using an atomic layer deposition (ALD) method, by applying plasma between the step of spraying the first source material and the step of spraying the first reactant material, and by applying plasma after the step of spraying the second reactant material, it is possible to prevent impurities from being generated by the first source material, the first reactant material, and the second reactant material.

According to the present invention, when depositing the third gallium nitride oxide layer using an atomic layer deposition (ALD) method, by applying plasma between the step of spraying the third source material and the step of spraying the fifth reactant material, and by applying plasma after spraying the sixth reactant material, it is possible to prevent impurities from being generated by the third source material, the fifth reactant material, and the sixth reactant material.

FIG. 1 is a schematic cross-sectional view of a gallium nitride layer according to one embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view of a gallium nitride layer according to another embodiment of the present invention.

FIG. 3 is a schematic flowchart of a method for forming a gallium nitride layer according to one embodiment of the present invention.

FIG. 4 is a schematic flowchart of a method for forming a gallium nitride layer according to another embodiment of the present invention.

FIG. 5 is a schematic flow chart of a method for forming a gallium nitride layer according to another embodiment of the present invention.

FIG. 6 is a schematic flow chart of a method for forming a gallium nitride layer according to another embodiment of the present invention.

FIG. 7 is a schematic cross-sectional view of a gallium nitride layer according to another embodiment of the present invention.

FIG. 8 is a schematic cross-sectional view of a gallium nitride layer according to another embodiment of the present invention.

FIG. 9 is a schematic flowchart of a method for forming a gallium nitride layer according to another embodiment of the present invention.

FIG. 10 is a schematic flow chart of a method for forming a gallium nitride layer according to another embodiment of the present invention.

FIG. 11 is a schematic flow chart of a method for forming a gallium nitride layer according to another embodiment of the present invention.

FIG. 12 is a schematic flow chart of a method for forming a gallium nitride layer according to another embodiment of the present invention.

FIG. 13 is a drawing showing a device for manufacturing a gallium nitride layer according to another embodiment of the present invention.

The advantages and features of the present invention, and the methods for achieving them, will become clear with reference to the embodiments described in detail below together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, and these embodiments are provided only to make the disclosure of the present invention complete and to fully inform a person having ordinary skill in the art to which the present invention belongs of the scope of the invention, and the present invention is defined only by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining embodiments of the present invention are exemplary, and therefore the present invention is not limited to the matters illustrated. Like reference numerals refer to like elements throughout the specification. In addition, in describing the present invention, if it is determined that a detailed description of a related known technology may unnecessarily obscure the gist of the present invention, the detailed description will be omitted. When the terms “includes,” “has,” “consists of,” etc. are used in this specification, other parts may be added unless “only” is used. When a component is expressed in the singular, it includes a case where the plural is included unless there is a specifically explicit description.

When interpreting a component, it is interpreted as including the error range even if there is no separate explicit description.

When describing a positional relationship, for example, when the positional relationship between two parts is described as 'on ~', 'upper ~', 'lower ~', 'next to ~', etc., one or more other parts may be located between the two parts, unless 'right' or 'directly' is used.

When describing a temporal relationship, for example, when describing a temporal relationship using phrases such as 'after', 'following', 'next to', or 'before', it can also include cases where there is no continuity, as long as 'right away' or 'directly' is not used.

Although the terms first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from another. Accordingly, a first component referred to below may also be a second component within the technical concept of the present invention.

The individual features of the various embodiments of the present invention may be partially or wholly combined or combined with each other, and may be technically linked and driven in various ways, and each embodiment may be implemented independently of each other or may be implemented together in a related relationship.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a schematic cross-sectional view of a gallium nitride layer according to one embodiment of the present invention.

As can be seen in FIG. 1, the gallium oxynitride layer according to one embodiment of the present invention includes a first gallium oxynitride layer (121) and a second gallium oxynitride layer (122). At this time, the first gallium oxynitride layer may be formed through atomic layer deposition (ALD), and the second gallium oxynitride layer may be formed through chemical vaporization deposition (CVD).

The above first gallium nitride layer (121) is formed on a substrate (100). At this time, the substrate (100) may be a glass or silicon (Si) wafer, but is not limited thereto.

The first gallium oxynitride layer (121) is formed by including an oxide semiconductor, and for example, the first gallium oxynitride layer (121) may be formed by including a GaON (Gallium Oxynitride) series oxide semiconductor containing gallium.

The first gallium oxynitride layer (121) can be formed using an atomic layer deposition (ALD) method. Since the first gallium oxynitride layer (121) is formed using the atomic layer deposition method, the film quality of the first gallium oxynitride layer (121) becomes excellent.

Meanwhile, the first gallium nitride layer (121) may be formed using plasma enhanced atomic layer deposition (PEALD).

The second gallium nitride layer (122) is formed on the first gallium nitride layer (121).

The second gallium oxynitride layer (122) is formed by including an oxide semiconductor, and for example, the second gallium oxynitride layer (122) may be formed by including a GaON (Gallium Oxynitride) series oxide semiconductor containing gallium.

The second gallium oxynitride layer (122) can be formed using a chemical vapor deposition method (CVD). When the second gallium oxynitride layer (122) is formed using the chemical vapor deposition method, the second gallium oxynitride layer (122) can be formed more quickly than when an atomic layer deposition method is used.

Meanwhile, the second gallium nitride layer (122) may be formed using plasma enhanced chemical vaporization deposition (PECVD).

FIG. 2 is a schematic cross-sectional view of a gallium nitride layer according to another embodiment of the present invention.

As can be seen in FIG. 2, the gallium oxynitride layer according to another embodiment of the present invention is composed of a first gallium oxynitride layer (121), a second gallium oxynitride layer (122), and a third gallium oxynitride layer (123). Meanwhile, the gallium oxynitride layer according to the embodiment of FIG. 2 is identical to the gallium oxynitride layer according to the embodiment of FIG. 1, except for the third gallium oxynitride layer (123), and therefore, the following description will focus on the different configurations.

The above first gallium nitride layer (121) is formed using an atomic layer deposition method, and the above second gallium nitride layer (122) is formed using a chemical vapor deposition method.

The third gallium nitride layer (123) is formed on the second gallium nitride layer (122).

The third gallium oxynitride layer (123) is formed by including an oxide semiconductor, and for example, the third gallium oxynitride layer (123) may be formed by including a GaON (Gallium Oxynitride) series oxide semiconductor containing gallium.

The third gallium oxynitride layer (123) can be formed using an atomic layer deposition (ALD) method. Since the third gallium oxynitride layer (123) is formed using the atomic layer deposition method, the film quality of the third gallium oxynitride layer (123) becomes excellent.

Meanwhile, the third gallium nitride layer (123) may be formed using plasma enhanced atomic layer deposition (PEALD).

FIG. 3 is a schematic flowchart of a method for forming a gallium nitride layer according to one embodiment of the present invention.

As can be seen from FIG. 3, a method for forming a gallium nitride layer according to one embodiment of the present invention includes a process of spraying a first source material (S110), a process of spraying a first reactant material (S120), a process of spraying a second reactant material (S130), and a process of spraying a second source material, a third reactant material, and a fourth reactant material (S140).

At this time, the process of spraying the first source material (S110), the process of spraying the first reactant material (S120), and the process of spraying the second reactant material (S130) may use atomic layer deposition (ALD).

Therefore, the process of spraying the first source material (S110), the process of spraying the first reactant material (S120), and the process of spraying the second reactant material (S130) can be performed in a vacuum chamber, and specifically, the substrate (100) is placed on a susceptor provided at the bottom of the vacuum chamber, and the first source material, the first reactant material, and the second reactant material are sprayed through a gas injection port provided at the top of the vacuum chamber to form the first gallium nitride layer (see 121 of FIGS. 1 and 2) on the substrate (100).

When the above atomic layer deposition method is used, the process of spraying the first source material onto the substrate (100), then spraying the first reactant material, and then spraying the second reactant material can be repeated in one cycle.

In the process of spraying the first source material (S110), the first source material may include a material including gallium (Ga). At this time, the material may be a precursor material or a gas material.

The material containing the gallium (Ga) may be, for example, trimethylgallium (TriMethyl Gallium, TMGa). Meanwhile, the material containing the gallium (Ga) is not limited thereto and may vary depending on knowledge in the art.

After the process of spraying the first source material (S110) is performed, the process of spraying the first reactant material (S120) can be performed.

When the first source material includes a material including gallium (Ga), the first reactant material may include either ammonia (NH ₃ ) or nitrogen (N ₂ ).

When the process (S120) of spraying the first reactant material is performed, the first reactant material (S120) can be sprayed with or without forming plasma.

At this time, if plasma is not formed in the process (S120) of spraying the first reactant material, the first gallium oxynitride layer can be formed using atomic layer deposition (ALD), and if plasma is formed in the process (S120) of spraying the first reactant material, the first gallium oxynitride layer can be formed using plasma-enhanced atomic layer deposition (PEALD).

When the process (S120) of injecting the first reactant is formed using the plasma-enhanced atomic layer deposition method, the plasma may include oxygen (O ₂ ).

After the process of spraying the first reactant material (S120) is performed, the process of spraying the second reactant material (S130) can be performed.

When the first source material includes a material including gallium (Ga), the second reactant material may include either oxygen (O ₂ ) or nitrous oxide (N ₂ O), in which case gallium oxynitride (GaON) may be obtained as the first gallium oxynitride layer (see 121 of FIGS. 1 and 2).

When performing the process (S130) of spraying the second reactant material, the second reactant material can be sprayed with or without forming plasma.

At this time, if plasma is not formed in the process (S130) of spraying the second reactant material, the first gallium oxynitride layer can be formed using atomic layer deposition (ALD), and if plasma is formed in the process (S130) of spraying the second reactant material, the first gallium oxynitride layer can be formed using plasma-enhanced atomic layer deposition (PEALD).

When the process of injecting the second reactant (S130) is formed using the plasma-enhanced atomic layer deposition method, the plasma may include oxygen (O ₂ ).

The first gallium nitride layer can be formed by atomic layer deposition (ALD or PEALD) to provide excellent film quality.

After the process of injecting the second reactant material (S130) is performed, the process of injecting the second source material, the third reactant material, and the fourth reactant material (S140) can be performed.

The process (S140) of spraying the second source material, the third reactant material, and the fourth reactant material may utilize a chemical vapor deposition (CVD) method. At this time, in the chamber in which the first gallium oxynitride layer is formed through the process (S110) of spraying the first source material, the process (S120) of spraying the first reactant material, and the process (S130) of spraying the second reactant material, the second source material, the third reactant material, and the fourth reactant material are simultaneously sprayed onto the first gallium oxynitride layer (see 121 of FIGS. 1 and 2) through the gas injection ports, thereby forming the second gallium oxynitride layer (see 122 of FIGS. 1 and 2) on the first gallium oxynitride layer (see 121 of FIGS. 1 and 2) by a chemical vapor deposition method.

The second source material may be a material containing gallium (Ga). In this case, the second source material may include, for example, trimethylgallium (TriMethyl Gallium, TMGa).

The third reactant material may include one of ammonia (NH ₃ ) and nitrogen (N ₂ ), and the fourth reactant material may include one of oxygen (O ₂ ) and nitrous oxide (N ₂ O).

When the second source material includes a material containing gallium (Ga), the third reactant material includes one of ammonia (NH ₃ ) and nitrogen (N ₂ ), and the fourth reactant material includes one of oxygen (O ₂ ) and nitrous oxide (N ₂ O), gallium oxynitride (GaON) can be obtained as the second gallium oxynitride layer (see 121 of FIGS. 1 and 2 ).

When the process (S140) of spraying the second source material, the third reactant material, and the fourth reactant material is performed, the second source material and the second reactant material may be sprayed with or without forming plasma.

At this time, if plasma is not formed in the process (S140) of spraying the second source material, the third reactant material, and the fourth reactant material, the second gallium oxynitride layer (see 121 of FIGS. 1 and 2) is formed using a chemical vapor deposition (CVD) method, and if plasma is formed in the process (S130) of spraying the second source material, the third reactant material, and the fourth reactant material, the second gallium oxynitride layer (see 121 of FIGS. 1 and 2) can be formed using a plasma enhanced chemical vapor deposition (PECVD). At this time, the plasma may include oxygen (O ₂ ).

The above second gallium nitride layer (see 121 in FIGS. 1 and 2) can be formed by chemical vapor deposition (CVD or PECVD), so that the deposition time can be shortened.

Although not illustrated, a process of injecting a purge gas may be added between each of the processes (S110, S120, S130, S140). For example, a process of injecting a purge gas may be added between the process of injecting the first source material (S110) and the process of injecting the first reactant material (S120), a process of injecting a purge gas may be added between the process of injecting the first reactant material (S120) and the process of injecting the second reactant material (S130), and a process of injecting a purge gas may be added between the process of injecting the second reactant material (S130) and the processes of injecting the second source material, the third reactant material, and the fourth reactant material (S140).

FIG. 4 is a schematic flowchart of a method for forming a gallium nitride layer according to another embodiment of the present invention.

As can be seen in FIG. 4, a method for forming a gallium oxynitride layer according to another embodiment of the present invention includes a process of spraying a first source material (S110), a process of spraying a first reactant material (S120), a process of spraying a second reactant material (S130), a process of spraying the second source material, the third reactant material, and the fourth reactant material (S140), a process of spraying the third source material (S150), a process of spraying the fifth reactant material (S160), and a process of spraying the sixth reactant material (S170). At this time, the method for forming a gallium oxynitride layer according to FIG. 4 is the same as the method for forming a gallium oxynitride layer according to FIG. 3 except for the process of spraying the third source material (S150), the process of spraying the fifth reactant material (S160), and the process of spraying the sixth reactant material (S170), and therefore, the following description will focus on different configurations.

The process of spraying the third source material (S150), the process of spraying the fifth reactant material (S160), and the process of spraying the sixth reactant material (S170) may utilize atomic layer deposition (ALD).

Therefore, the process of spraying the third source material (S150), the process of spraying the fifth reactant material (S160), and the process of spraying the sixth reactant material (S170) can be performed in a vacuum chamber, and specifically, the substrate (100) on which the first gallium oxynitride layer and the second gallium oxynitride layer are formed is placed on a susceptor provided at the bottom of the vacuum chamber, and the third source material, the fifth reactant material, and the sixth reactant material are sprayed through a gas injection port provided at the top of the vacuum chamber to form the third gallium oxynitride layer (see 123 of FIG. 2) on the second gallium oxynitride layer.

When the above atomic layer deposition method is used, the process of spraying the third source material on the substrate (100), then spraying the fifth reactant material, and then spraying the sixth reactant material can be repeated in one cycle.

The process (S150) of spraying the third source material may be performed after the process (S130) of spraying the second source material and the second reactant material.

In the process of injecting the third source material (S150), the third source material may include a material including gallium (Ga). At this time, the material may be a precursor material or a gas material.

The material containing the gallium (Ga) may be, for example, trimethylgallium (TriMethyl Gallium, TMGa). Meanwhile, the material containing the gallium (Ga) is not limited thereto and may vary depending on knowledge in the art.

After the process of spraying the third source material (S150) is performed, the process of spraying the fifth reactant material (S160) can be performed.

When the third source material includes a material including gallium (Ga), the fifth reactant material may include either ammonia (NH ₃ ) or nitrogen (N ₂ ).

When the process (S160) of spraying the fifth reactant material is performed, the fifth reactant material (S160) can be sprayed with or without forming plasma.

At this time, if plasma is not formed in the process (S160) of spraying the fifth reactant material, the third gallium oxynitride layer can be formed using atomic layer deposition (ALD), and if plasma is formed in the process (S160) of spraying the fifth reactant material, the third gallium oxynitride layer can be formed using plasma enhanced atomic layer deposition (PEALD).

When the process (S160) of injecting the fifth reactant is formed using the plasma-enhanced atomic layer deposition method, the plasma may include oxygen (O ₂ ).

After the process of spraying the fifth reactant material (S160) is performed, the process of spraying the sixth reactant material (S170) can be performed.

When the third source material includes a material including gallium (Ga), the sixth reactant material may include either oxygen (O ₂ ) or nitrous oxide (N ₂ O), in which case gallium oxynitride (GaON) may be obtained as the third gallium oxynitride layer (see 123 in FIG. 2).

When the process (S170) of spraying the sixth reactant material is performed, the sixth reactant material can be sprayed with or without forming plasma.

At this time, if plasma is not formed in the process (S170) of spraying the sixth reactant material, the third gallium oxynitride layer (see 123 of FIG. 2) can be formed using atomic layer deposition (ALD), and if plasma is formed in the process (S170) of spraying the sixth reactant material, the third gallium oxynitride layer (see 123 of FIG. 2) can be formed using plasma-enhanced atomic layer deposition (PEALD).

When the process of injecting the sixth reactant (S170) is formed using the plasma-enhanced atomic layer deposition method, the plasma may include oxygen (O ₂ ).

The third gallium nitride oxide layer (see 123 in FIG. 2) can be formed by atomic layer deposition (ALD or PEALD) to improve film quality.

Although not illustrated, a process of injecting purge gas may be added between each of the processes (S110, S120, S130, S140, S150, S160, S170). For example, a process of injecting a purge gas may be added between the process of injecting the first source material (S110) and the process of injecting the first reactant material (S120), a process of injecting a purge gas may be added between the process of injecting the first reactant material (S120) and the process of injecting the second reactant material (S130), a process of injecting a purge gas may be added between the process of injecting the second reactant material (S130) and the process of injecting the second source material, the third reactant material and the fourth reactant material (S140), a process of injecting a purge gas may be added between the process of injecting the second source material, the third reactant material and the fourth reactant material (S140) and the process of injecting the third source material (S150), and a process of injecting a purge gas may be added between the process of injecting the third source material (S150) and the process of injecting the fifth reactant material. A process of injecting a purge gas between the processes (S160) may be added, and a process of injecting a purge gas may be added between the process (S160) of injecting the fifth reactant material and the process (S170) of injecting the sixth reactant material.

FIG. 5 is a schematic flow chart of a method for forming a gallium nitride layer according to another embodiment of the present invention.

As can be seen in FIG. 5, a method for forming a gallium oxynitride layer according to another embodiment of the present invention includes a step of injecting a first source material (S110), a step of applying plasma containing hydrogen gas or argon gas (S115), a step of injecting a first reactant material (S120), a step of injecting a second reactant material (S130), a step of applying plasma containing hydrogen gas or argon gas (S135), and a step of injecting the second source material, the third reactant material, and the fourth reactant material (S140). At this time, the method for forming a gallium oxynitride layer according to FIG. 5 is the same as the method for forming a gallium oxynitride layer according to FIG. 3 except for the steps of applying plasma containing hydrogen gas or argon gas (S115, S135), and therefore, the following description will focus on different configurations.

The process (S115, S135) of applying plasma containing the hydrogen or argon gas may be performed after the process (S110) of injecting the first source material or after the process (S130) of injecting the second reactant material.

In the process of applying plasma containing hydrogen or argon gas (S115, S135), plasma containing hydrogen gas (H ₂ ) or argon (Ar) gas can be applied into the chamber. Specifically, the process of spraying the first source material (S110) can be performed so that plasma containing hydrogen or argon gas can be applied onto the substrate (100) on which the first source material is adsorbed. In this case, impurities remaining on the substrate (100) without being adsorbed can be removed.

Alternatively, a process (S130) of spraying the second reactant material may be performed so that plasma including hydrogen or argon gas is applied on the substrate (100) on which the first source material, the first reactant material, and the second reactant material react to form the first gallium oxynitride layer. In this case, impurities remaining on the substrate (100) without reacting can be removed.

Therefore, when the process of spraying the first source material (S110), the process of spraying the first reactant material (S120), and the process of spraying the second reactant material (S130) are performed using an atomic layer deposition method, the content of impurities on the surface or inside of the first gallium nitride layer formed can be minimized.

Although not illustrated, the method may additionally include a process of applying plasma containing hydrogen gas or argon gas after the process (S140) of injecting the second source material, the third reactant material, and the fourth reactant material.

Although not illustrated, a process of injecting purge gas may be added between each of the processes (S110, S115, S120, S130, S135, S140).

FIG. 6 is a schematic flow chart of a method for forming a gallium nitride layer according to another embodiment of the present invention.

As can be seen in FIG. 6, a method for forming a gallium oxynitride layer according to another embodiment of the present invention includes a process of injecting a first source material (S110), a process of applying plasma containing hydrogen gas or argon gas (S115), a process of injecting a first reactant material (S120), a process of injecting a second reactant material (S130), a process of applying plasma containing hydrogen gas or argon gas (S135), a process of injecting a second source material, a third reactant material, and a fourth reactant material (S140), a process of injecting a third source material (S150), a process of applying plasma containing hydrogen gas or argon gas (S155), a process of injecting a fifth reactant material (S160), a process of injecting a sixth reactant material (S170), and a process of applying plasma containing hydrogen gas or argon gas (S175).

At this time, the method for forming a gallium nitride layer according to FIG. 6 is the same as the method for forming a gallium nitride layer according to FIG. 5 except for the process of spraying the third source material (S150) and the process of applying plasma including hydrogen gas or argon gas (S175), so the following description will focus on different configurations.

The process of spraying the third source material (S150), the process of spraying the fifth reactant material (S160), and the process of spraying the sixth reactant material (S170) are the same as the process of spraying the third source material, the process of spraying the fifth reactant material, and the process of spraying the sixth reactant material according to FIG. 4. Therefore, the process of spraying the third source material (S150), the process of spraying the fifth reactant material (S160), and the process of spraying the sixth reactant material (S170) can use an atomic layer deposition method, and at this time, the third gallium nitride oxide layer can be formed.

The process (S155, S175) of applying plasma containing the hydrogen or argon gas may be performed after the process (S150) of injecting the third source material or after the process (S170) of injecting the sixth reactant material.

In the process of applying plasma containing the hydrogen or argon gas (S155, S175), plasma containing hydrogen gas (H ₂ ) or argon (Ar) gas can be applied into the chamber. Specifically, the process of spraying the third source material (S150) can be performed so that plasma containing the hydrogen or argon gas can be applied onto the second gallium nitride oxide layer on which the third source material is adsorbed. In this case, impurities remaining on the substrate (100) without being adsorbed can be removed.

Alternatively, a process (S170) for spraying the sixth reactant material may be performed so that plasma including hydrogen or argon gas is applied on the substrate (100) on which the third source material, the fifth reactant material, and the sixth reactant material react to form a third gallium oxynitride layer. In this case, impurities remaining on the substrate (100) without reacting can be removed.

Accordingly, when the process of spraying the third source material (S150), the process of spraying the fifth reactant material (S160), and the process of spraying the sixth reactant material (S170) are performed using an atomic layer deposition method, the content of impurities on the surface or inside of the third gallium nitride layer formed can be minimized.

Although not described, a process of applying plasma including hydrogen gas or argon gas may be additionally included between the process (S140) of injecting the second source material, the third reactant material, and the fourth reactant material and the process (S150) of injecting the third source material.

Although not illustrated, a process of injecting purge gas may be added between each of the processes (S110, S115, S120, S130, S135, S140, S150, S155, S160, S170, S175).

FIG. 7 is a schematic cross-sectional view of a gallium nitride layer according to another embodiment of the present invention.

As can be seen in FIG. 7, a gallium oxynitride layer according to another embodiment of the present invention comprises a first gallium oxynitride layer (221) and a second gallium oxynitride layer (222). At this time, the first gallium oxynitride layer may be formed through chemical vapor deposition (CVD), and the second gallium oxynitride layer may be formed through atomic layer deposition (ALD).

The above first gallium nitride layer (221) is formed on a substrate (200). At this time, the substrate (200) may be a glass or silicon (Si) wafer, but is not limited thereto.

The first gallium oxynitride layer (221) is formed by including an oxide semiconductor, and for example, the first gallium oxynitride layer (221) may be formed by including a GaON (Gallium Oxynitride) series oxide semiconductor containing gallium.

The first gallium oxynitride layer (221) can be formed using a chemical vapor deposition method (CVD). When the first gallium oxynitride layer (221) is formed using the chemical vapor deposition method, the first gallium oxynitride layer (221) can be formed more quickly than when an atomic layer deposition method is used.

Meanwhile, the first gallium nitride layer (221) may be formed using plasma enhanced chemical vaporization deposition (PECVD).

The second gallium nitride layer (222) is formed on the first gallium nitride layer (221).

The second gallium oxynitride layer (222) is formed by including an oxide semiconductor, and for example, the second gallium oxynitride layer (222) may be formed by including a GaON (Gallium Oxynitride) series oxide semiconductor containing gallium.

The second gallium oxynitride layer (222) can be formed using atomic layer deposition (ALD). Since the second gallium oxynitride layer (222) is formed using the atomic layer deposition method, the film quality of the second gallium oxynitride layer (222) becomes excellent.

Meanwhile, the second gallium nitride layer (222) may be formed using plasma enhanced atomic layer deposition (PEALD).

FIG. 8 is a schematic cross-sectional view of a gallium nitride layer according to another embodiment of the present invention.

As can be seen in FIG. 8, the gallium oxynitride layer according to another embodiment of the present invention is composed of a first gallium oxynitride layer (221), a second gallium oxynitride layer (222), and a third gallium oxynitride layer (223). Meanwhile, the gallium oxynitride layer according to the embodiment of FIG. 8 is identical to the gallium oxynitride layer according to the embodiment of FIG. 7, except for the third gallium oxynitride layer (223), and therefore, the following description will focus on the different configurations.

The above first gallium nitride layer (221) is formed using a chemical vapor deposition method, and the above second gallium nitride layer (222) is formed using an atomic layer deposition method.

The third gallium nitride layer (223) is formed on the second gallium nitride layer (222).

The third gallium oxynitride layer (223) is formed by including an oxide semiconductor, and for example, the third gallium oxynitride layer (223) may be formed by including a GaON (Gallium Oxynitride) series oxide semiconductor containing gallium.

The third gallium oxynitride layer (223) can be formed using a chemical vapor deposition method (CVD). When the third gallium oxynitride layer (223) is formed using the chemical vapor deposition method, the third gallium oxynitride layer (223) can be formed more quickly than when the atomic layer deposition method is used.

Meanwhile, the third gallium nitride layer (223) may be formed using plasma enhanced atomic layer deposition (PEALD).

FIG. 9 is a schematic flowchart of a method for forming a gallium nitride layer according to another embodiment of the present invention.

As can be seen from FIG. 9, a method for forming a gallium nitride layer according to one embodiment of the present invention includes a process of spraying a first source material, a first reactant material, and a second reactant material (S210), a process of spraying a second source material (S220), a process of spraying a third reactant material (S230), and a process of spraying a fourth reactant material (S240).

The process (S210) of spraying the first source material, the first reactant material, and the second reactant material may utilize a chemical vapor deposition (CVD) method. The process (S210) of spraying the first source material, the first reactant material, and the second reactant material may be performed in a vacuum chamber, and specifically, the substrate (200) is placed on a susceptor provided at the bottom of the vacuum chamber, and the first source material, the first reactant material, and the second reactant material are simultaneously sprayed onto the substrate (200) through a gas injection port provided at the top of the vacuum chamber, thereby forming a first gallium nitride layer (see 221 of FIGS. 7 and 8) on the substrate (200) by a chemical vapor deposition method.

The first source material may be a material including gallium (Ga). In this case, the first source material may include, for example, trimethylgallium (TriMethyl Gallium, TMGa).

The first reactant may include one of ammonia (NH ₃ ) and nitrogen (N ₂ ), and the second reactant may include one of oxygen (O ₂ ) and nitrous oxide (N ₂ O).

When the first source material includes a material including gallium (Ga), the first reactant material includes one of ammonia (NH ₃ ) and nitrogen (N ₂ ), and the second reactant material includes one of oxygen (O ₂ ) and nitrous oxide (N ₂ O), gallium oxynitride (GaON) can be obtained as the first gallium oxynitride layer (see 221 of FIGS. 7 and 8 ).

When the process (S210) of spraying the first source material, the first reactant material, and the second reactant material is performed, the first source material, the first reactant material, and the second reactant material can be sprayed with or without forming plasma.

At this time, if plasma is not formed in the process (S210) of spraying the first source material, the first reactant material, and the second reactant material, the first gallium oxynitride layer (see 221 of FIGS. 7 and 8) is formed using a chemical vapor deposition (CVD) method, and if plasma is formed in the process (S210) of spraying the first source material, the first reactant material, and the second reactant material, the first gallium oxynitride layer (see 221 of FIGS. 7 and 8) can be formed using a plasma enhanced chemical vapor deposition (PECVD). At this time, the plasma may include oxygen (O ₂ ).

The first gallium nitride layer (see 221 in FIGS. 7 and 8) can be formed by a chemical vapor deposition method, so that the deposition time can be shortened.

After the process (S210) of spraying the first source material, the first reactant material, and the second reactant material is performed, the process (S220) of spraying the second source material, the process (S230) of spraying the third reactant material, and the process (S240) of spraying the fourth reactant material may be performed.

The process of spraying the second source material (S220), the process of spraying the third reactant material (S230), and the process of spraying the fourth reactant material (S240) can utilize atomic layer deposition (ALD).

In the chamber where the first gallium oxynitride layer is formed through the process (S210) of spraying the first source material, the first reactant material, and the second reactant material, the second source material, the third reactant material, and the fourth reactant material are sprayed onto the first gallium oxynitride layer (see 221 of FIGS. 7 and 8) through the gas injection port, thereby forming the second gallium oxynitride layer (see 222 of FIGS. 7 and 8) on the first gallium oxynitride layer (see 221 of FIGS. 7 and 8) by atomic layer deposition.

When the above-described atomic layer deposition method is used, the process of spraying the second source material on the first gallium nitride layer (see 221 of FIGS. 7 and 8), then spraying the third reactant material, and then spraying the fourth reactant material can be repeated in one cycle.

In the process of spraying the second source material (S210), the second source material may include a material including gallium (Ga). At this time, the material may be a precursor material or a gas material.

The material containing the gallium (Ga) may be, for example, trimethylgallium (TriMethyl Gallium, TMGa). Meanwhile, the material containing the gallium (Ga) is not limited thereto and may vary depending on knowledge in the art.

After the process of spraying the second source material (S220) is performed, the process of spraying the third reactant material (S230) can be performed.

When the second source material includes a material including gallium (Ga), the third reactant material may include either ammonia (NH ₃ ) or nitrogen (N ₂ ).

When the process (S230) of spraying the third reactant material is performed, the third reactant material (S230) can be sprayed with or without forming plasma.

At this time, if plasma is not formed in the process (S230) of spraying the third reactant material, the second gallium oxynitride layer can be formed using atomic layer deposition (ALD), and if plasma is formed in the process (S230) of spraying the third reactant material, the second gallium oxynitride layer can be formed using plasma enhanced atomic layer deposition (PEALD).

When the process of injecting the third reactant (S230) is formed using the plasma-enhanced atomic layer deposition method, the plasma may include oxygen (O ₂ ).

After the process of spraying the third reactant material (S230) is performed, the process of spraying the fourth reactant material (S240) can be performed.

When the second source material includes a material including gallium (Ga), the fourth reactant material may include either oxygen (O ₂ ) or nitrous oxide (N ₂ O), in which case gallium oxynitride (GaON) may be obtained as the second gallium oxynitride layer (see 222 of FIGS. 7 and 8).

When performing the process (S240) of spraying the fourth reactant material, the fourth reactant material can be sprayed with or without forming plasma.

At this time, if plasma is not formed in the process (S240) of spraying the fourth reactant material, the second gallium oxynitride layer (see 222 of FIGS. 7 and 8) is formed using atomic layer deposition (ALD), and if plasma is formed in the process (S240) of spraying the fourth reactant material, the second gallium oxynitride layer can be formed using plasma enhanced atomic layer deposition (PEALD).

When the process (S240) of injecting the fourth reactant is formed using the plasma-enhanced atomic layer deposition method, the plasma may include oxygen (O ₂ ).

The above second gallium nitride layer (see 222 of FIGS. 7 and 8) can be formed by atomic layer deposition (ALD or PEALD) to provide excellent film quality.

Although not illustrated, a process of injecting purge gas may be added between each of the processes (S210, S220, S230, S240).

FIG. 10 is a schematic flow chart of a method for forming a gallium nitride layer according to another embodiment of the present invention.

As can be seen in FIG. 10, a method for forming a gallium oxynitride layer according to another embodiment of the present invention includes a process (S210) for spraying a first source material, a first reactant material, and a second reactant material, a process (S220) for spraying a second source material, a process (S230) for spraying a third reactant material, a process (S240) for spraying a fourth reactant material, and a process (S250) for spraying the third source material, the fifth reactant material, and the sixth reactant material. At this time, the method for forming a gallium oxynitride layer according to FIG. 10 is the same as the method for forming a gallium oxynitride layer according to FIG. 9 except for the process (S250) for spraying the third source material, the fifth reactant material, and the sixth reactant material, and therefore, a description will be made mainly of different configurations below.

The process (S250) of spraying the third source material, the fifth reactant material, and the sixth reactant material may utilize a chemical vaporization deposition (CVD) method.

Therefore, the process (S250) of spraying the third source material, the fifth reactant material, and the sixth reactant material can be performed in a vacuum chamber, and specifically, the substrate (200) on which the first gallium oxynitride layer and the second gallium oxynitride layer are formed is placed on a susceptor provided at the bottom of the vacuum chamber, and the third source material, the fifth reactant material, and the sixth reactant material are simultaneously sprayed through a gas injection port provided at the top of the vacuum chamber to form the third gallium oxynitride layer (see 223 of FIG. 8) on the second gallium oxynitride layer.

The process (S250) of injecting the third source material, the fifth reactant material, and the sixth reactant material may be performed after the process (S240) of injecting the fourth reactant material.

The third source material may be a material including gallium (Ga). In this case, the third source material may include, for example, trimethylgallium (TriMethyl Gallium, TMGa).

The fifth reactant material may include one of ammonia (NH ₃ ) and nitrogen (N ₂ ), and the sixth reactant material may include one of oxygen (O ₂ ) and nitrous oxide (N ₂ O).

When the third source material includes a material including gallium (Ga), the fifth reactant material includes one of ammonia (NH ₃ ) and nitrogen (N ₂ ), and the sixth reactant material includes one of oxygen (O ₂ ) and nitrous oxide (N ₂ O), gallium oxynitride (GaON) can be obtained as the third gallium oxynitride layer.

In the case of the process (S250) of spraying the third source material, the fifth reactant material, and the sixth reactant material, the third source material, the fifth reactant material, and the sixth reactant material can be sprayed with or without forming plasma.

At this time, if plasma is not formed in the process (S250) of spraying the third source material, the fifth reactant material, and the sixth reactant material, the third gallium oxynitride layer (see 223 of FIG. 8) is formed using a chemical vapor deposition (CVD) method, and if plasma is formed in the process (S250) of spraying the third source material, the fifth reactant material, and the sixth reactant material, the third gallium oxynitride layer (see 223 of FIG. 8) can be formed using a plasma-enhanced chemical vapor deposition (PECVD) method. At this time, the plasma may include oxygen (O ₂ ).

The third gallium nitride oxide layer (see 223 in FIG. 8) can be formed by chemical vapor deposition (CVD or PECVD), so that the deposition time can be shortened.

Although not illustrated, a process of injecting purge gas may be added between each of the processes (S210, S220, S230, S240, S250).

FIG. 11 is a schematic flow chart of a method for forming a gallium nitride layer according to another embodiment of the present invention.

As can be seen in FIG. 11, a method for forming a gallium oxynitride layer according to another embodiment of the present invention includes a step (S210) of injecting a first source material, a first reactant material, and a second reactant material, a step (S215) of applying plasma containing hydrogen gas or argon gas, a step (S220) of injecting a second source material, a step (S230) of injecting a third reactant material, and a step (S240) of injecting a fourth reactant material. At this time, the method for forming a gallium oxynitride layer according to FIG. 11 is the same as the method for forming a gallium oxynitride layer according to FIG. 9 except for the step (S215) of applying plasma containing hydrogen gas or argon gas, and therefore, the following description will focus on different configurations.

The process (S215) of applying plasma containing the hydrogen or argon gas may be performed after the process (S210) of injecting the first source material, the first reactant material, and the second reactant material.

In the process of applying plasma containing hydrogen or argon gas (S215), plasma containing hydrogen gas (H ₂ ) or argon (Ar) gas can be applied into the chamber. Specifically, the process of spraying the first source material, the first reactant material, and the second reactant material (S210) can be performed so that the plasma containing hydrogen or argon gas can be applied on the substrate (200) on which the first source material, the first reactant material, and the second reactant material react and form the first gallium oxynitride layer. In this case, impurities remaining on the substrate (200) without reacting can be removed.

Accordingly, the content of impurities on the surface or inside of the first gallium nitride layer formed through the process (S210) of spraying the first source material, the first reactant material, and the second reactant material can be minimized.

Although not illustrated, the method may further include a process of applying plasma containing hydrogen gas or argon gas between the process of injecting the second source material (S220) and the process of injecting the third reactant material (S230). In addition, the method may further include a process of applying plasma containing hydrogen gas or argon gas after the process of injecting the fourth reactant material (S240).

Although not illustrated, a process of injecting purge gas may be added between each of the processes (S210, S215, S220, S230, S240).

FIG. 12 is a schematic flow chart of a method for forming a gallium nitride layer according to another embodiment of the present invention.

As can be seen from FIG. 12, a method for forming a gallium nitride layer according to another embodiment of the present invention includes a process of injecting a first source material, a first reactant material, and a second reactant material (S210), a process of applying plasma containing hydrogen gas or argon gas (S215), a process of injecting a second source material (S220), a process of injecting a third reactant material (S230), a process of injecting a fourth reactant material (S240), a process of injecting the third source material, a fifth reactant material, and a sixth reactant material (S250), and a process of applying plasma containing hydrogen gas or argon gas (S255).

At this time, the method for forming a gallium nitride layer according to FIG. 12 is the same as the method for forming a gallium nitride layer according to FIG. 11 except for the process (S250) of spraying the third source material, the fifth reactant material, and the sixth reactant material and the process (S255) of applying plasma including hydrogen gas or argon gas, so the following description will focus on different configurations.

The process (S250) of spraying the third source material, the fifth reactant material, and the sixth reactant material is the same as the process of spraying the third source material, the fifth reactant material, and the sixth reactant material according to Fig. 10. Therefore, the process (S250) of spraying the third source material, the fifth reactant material, and the sixth reactant material can use a chemical vapor deposition method, and at this time, the third gallium nitride oxide layer can be formed.

The process (S255) of applying plasma containing the hydrogen or argon gas may be performed after the process (S250) of injecting the third source material, the fifth reactant material, and the sixth reactant material.

In the process of applying plasma containing the hydrogen or argon gas (S255), plasma containing hydrogen gas (H ₂ ) or argon (Ar) gas may be applied into the chamber. Specifically, the plasma containing the hydrogen or argon gas may be applied on the third gallium nitride oxide layer formed after the process of spraying the third source material, the fifth reactant material, and the sixth reactant material (S250) is performed.

When the plasma containing the hydrogen or argon gas is applied, impurities generated after the process (S250) of spraying the third source material, the fifth reactant material, and the sixth reactant material can be removed. Therefore, when the process (S250) of spraying the third source material, the fifth reactant material, and the sixth reactant material is performed using a chemical vapor deposition method, the content of impurities on the surface or inside of the third gallium nitride layer formed can be minimized.

Although not illustrated, the method may further include a process of applying plasma containing hydrogen gas or argon gas between the process of injecting the second source material (S220) and the process of injecting the third reactant material (S230). In addition, the method may further include a process of applying plasma containing hydrogen gas or argon gas between the process of injecting the fourth reactant material (S240) and the process of injecting the third source material, the fifth reactant material, and the sixth reactant material (S250).

Although not illustrated, a process of injecting purge gas may be added between each of the processes (S210, S215, S220, S230, S240, S250, S255).

FIG. 13 is a drawing showing a device for manufacturing a gallium nitride layer according to another embodiment of the present invention.

Referring to FIG. 13, a gallium nitride layer manufacturing device according to an embodiment of the present invention is a device for depositing a gallium nitride layer, and has an upper dome (352) and a lower dome (358). Process gases, that is, a source material and a reactant material, can be injected into the upper dome (352), respectively, and the process gases, that is, the source material and the reactant material, can be exhausted from the upper dome (352). The source material and the reactant material can be injected through a gas injection unit. The gas injection unit has one or more injectors, and can inject a process gas into a process space by one or more injectors. A process space can be located below the upper dome (352). By supplying a purge gas to the lower dome (358) and supplying a process gas to the upper dome (352), the process gas can be prevented from flowing into the lower dome (358), thereby suppressing deposition of an abnormal layer on the lower dome (358). In addition, by forming a uniform plasma, a uniform layer can be formed without rotating the substrate (374).

Additionally, the gallium oxide (GaON) of this process can also be formed using a plasma enhanced ALD (PEALD) device employing an inductively coupled plasma source.

The device for manufacturing a gallium nitride layer having the upper dome (352) and the lower dome (358) has a liner (354, 356) to prevent deposition of an unnecessary layer on the inner wall of the chamber (360). The liner (354, 356) can be periodically replaced or cleaned.

The lamp heater (366) positioned at the bottom of the lower dome (358) is a ring-shaped lamp heater, and a plurality of lamp heaters may be provided. The plurality of lamp heaters (366) can independently control power to uniformly heat the substrate (374).

A high vacuum pump (390) consisting of a turbo molecular pump (TMP) connected to the exhaust of the chamber (360) maintains a base vacuum inside the chamber (360), thereby forming a stable plasma at a pressure of several Torr or less even during the process.

The device for manufacturing a gallium nitride layer of the present invention can form a uniform layer on the substrate (374) at high speed by providing infrared rays reflected from an electromagnetic shielding housing (330) back to the substrate (374) while reducing performance degradation caused by infrared heating of an antenna (310) forming an inductively coupled plasma disposed on the upper dome (352).

Referring to FIG. 13, a gallium nitride layer manufacturing device (300) according to one embodiment of the present invention includes: a chamber (360) having a side wall; a substrate support member (372) provided inside the chamber and supporting a substrate; an upper dome (352) formed of a transparent dielectric material and covering an upper surface of the chamber (360); an antenna (310) disposed on an upper portion of the upper dome (352) and forming an inductively coupled plasma; and an electromagnetic shielding housing (330) disposed to surround the antenna (310). The electromagnetic shielding housing (330) can be heated by a heater.

The above antenna (310) includes two one-turn unit antennas, and the two one-turn unit antennas can be connected in parallel to an RF power source (340).

The plasma of the step of generating hydrogen plasma performed after the step of injecting the reactant material and the step of generating plasma performed between the step of injecting the source material and the step of injecting the reactant material can be formed by the antenna (310).

The source material and the reactant material can be injected into the process space within the upper dome (352) and the lower dome (358) by an injector (not shown). The source material and the reactant material can be injected into the chamber (360) by the injector in the direction of the upper dome (352) or in the horizontal direction.

The chamber (360) is formed of a conductor, the internal space of the chamber (360) has a cylindrical shape, and the external shape of the chamber (360) may have a rectangular parallelepiped shape. The chamber (360) may be cooled by cooling water. The chamber (360), the upper dome (352), and the lower dome (358) are combined to provide a sealed space.

A substrate entrance (360a) may be provided on one side of the chamber (360), and an exhaust port (360b) may be provided on the other side of the chamber (360) facing the substrate entrance (360a). The exhaust port (360b) may be connected to a high vacuum pump (390). The high vacuum pump (390) may be a turbo molecular pump. The high vacuum pump (390) maintains a low base pressure and may maintain a pressure of several torr or less even during the process. An upper surface of the exhaust port (360b) may be equal to or lower than an upper surface of the substrate entrance (360a).

The upper dome (352) may be made of a transparent dielectric such as quartz, sapphire, or ceramic. The upper dome (352) may be made of a ceramic material. Ceramic materials have better corrosion resistance and corrosion resistance than quartz.

The upper dome (352) can be inserted into a protrusion formed on the upper surface of the chamber (360) and combined with the chamber (360). The combined portion of the upper dome (352) combined with the chamber (360) for vacuum sealing may have a washer shape. The upper dome (352) may be arc-shaped or oval-shaped. The upper dome (352) can transmit infrared rays incident from below.

Infrared rays reflected from the electromagnetic shielding housing (330) can penetrate the upper dome (352) and enter the substrate (374).

The lower dome (358) may be made of quartz or sapphire as a transparent dielectric. The lower dome (358) may include a washer-shaped joining portion that joins to a ledge formed on a lower surface of the chamber (360), a funnel-shaped lower dome body that extends downward from the joining portion, and a cylindrical pipe that extends downward from the center of the lower dome body. The lower dome (358) may be inserted into the ledge formed on the lower surface of the chamber (360) and joined to the chamber (360). The joining portion of the lower dome (358) that joins to the chamber (360) for vacuum sealing may be washer-shaped.

The driving shaft of the first lifter (384) and the driving shaft of the second lifter (382) may be inserted and placed within the cylindrical pipe of the lower dome (358). The purge gas supplied through the lower dome (358) may be supplied through a path. The path may be the cylindrical pipe of the lower dome (358). The purge gas may be an inert gas such as argon.

The upper liner (354) may be made of a transparent dielectric material. For example, the upper liner (354) may be made of quartz, alumina, sapphire, or aluminum nitride. The upper liner (354) may be made of a material that inhibits deposition of the above layer.

The insulation (362) is arranged between the lower surface of the chamber (360) and the reflector (361) and may have a ring shape. The insulation (362) may reduce heat transfer from the heated reflector (361) to the chamber (360). The insulation (362) may be made of a ceramic material. The upper surface of the insulation (362) may have a ledge. The ledge of the insulation (362) and the ledge of the lower surface of the chamber (360) may receive and vacuum-seal the washer-shaped joining portion of the lower dome (358).

The concentric ring-shaped lamp heater (366) may include a plurality of concentric ring-shaped lamp heaters and may be connected to a power source (364). The concentric ring-shaped lamp heaters (366) are arranged at regular intervals along the inclined surface of the lower dome (358), and the concentric ring-shaped lamp heaters (366) may be divided into three groups and may be supplied with power independently of each other. The concentric ring-shaped lamp heaters (366) may be inserted and aligned into a ring-shaped groove formed on the inclined surface of the reflector (361).

For example, the concentric lamp heaters (366) may be halogen lamp heaters, and may be eight in number. The three lamp heaters at the bottom may form a first group, the two lamp heaters in the middle may form a second group, and the three lamp heaters at the top may form a third group. The first group may be connected to a first power source (364a), the second group may be connected to a second power source (364b), and the third group may be connected to a third power source (364c). The first to third power sources (364a to 364c) may be independently controlled to uniformly heat the substrate.

The RF power source (340) can supply RF power to the antenna (310) through an impedance matching box (342) and a power supply line (343). The antenna (310) through which RF current flows must secure a sufficient cross-sectional area for high current, and it is preferable to form a closed loop to form sufficient magnetic flux. The antenna (310) can use a vertically erected strip line to minimize resistance increase due to heating by absorbing infrared rays incident from above or below. The antenna (310) provides high transmittance to infrared rays.

In addition, the antenna (310) may be coated with gold (Au) or silver (Ag) to increase infrared reflection. In addition, a two-layer antenna (310) may be used to secure sufficient magnetic flux. The circular unit antenna may be arranged at the upper surface where RF power is supplied, thereby reducing power loss due to capacitive coupling.

The lower dome (358) covers the lower surface of the chamber (360) and may be formed of a transparent dielectric material and have the same curvature as the upper dome (352). The lamp heater (366) may be placed on the lower surface of the lower dome (358). The reflector (361) may be placed on the lower surface of the lamp heater (366).

In addition, a control unit (not shown) for controlling the RF power source (340) may be further included. Here, for example, a source material supply path (not shown) for supplying a raw material gas and a reactant material supply path (not shown) may be formed separately.

Meanwhile, a substrate may be placed into the chamber (360) on the substrate support member (372) for a layer forming process. The substrate (374) may include various substrates for forming a gallium nitride (GaON) layer.

The substrate support member (372) may be provided with, for example, an electrostatic chuck or the like so that the substrate (374) can be secured and supported, and the substrate (374) may be held in place by electrostatic force, or the substrate (374) may be supported by vacuum suction or mechanical force.

The clamp (350) may be arranged to cover the edge of the upper dome (352). The clamp (350) may be formed of a conductor and may be cooled by cooling water. The lower surface of the clamp (350) may have a protrusion to be coupled with a washer-shaped coupling portion of the upper dome (352) and may include a curved portion (150a) to cover a portion of the curved portion of the upper dome (352). The curved portion (150a) of the clamp (350) may be gold-plated to reflect infrared rays. The inner diameter of the clamp (350) may be substantially the same as the inner diameter of the upper liner (354). In addition, the inner diameter of the clamp (350) may be the same as the diameter of the antenna housing (330).

The chamber housing (332) can be placed on the clamp (350) and arranged to cover the antenna housing (330).

Meanwhile, it may be configured to supply a gas containing gallium (Ga) as a source material, and may supply a gas containing oxygen (O) as a reactant material. Here, the gas containing the source material, for example, gallium, may include trimethyl gallium (TMGa) gas, and the gas containing the reactant material, for example, oxygen, may include oxygen (O ₂ ) gas or nitrous oxide (N ₂ O) gas.

Although the embodiments of the present invention have been described in more detail with reference to the attached drawings, the present invention is not necessarily limited to these embodiments, and various modifications may be made without departing from the technical idea of the present invention. Accordingly, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention, but to explain it, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are exemplary in all aspects and not restrictive. The protection scope of the present invention should be interpreted by the claims, and all technical ideas within a scope equivalent thereto should be interpreted as being included in the scope of the rights of the present invention.

Claims (18)

A method for forming a gallium nitride (GaON) layer on a substrate, A step of spraying a source material containing gallium; A step of forming a gallium nitride layer by spraying a first reactant material containing nitrogen; and A method for forming a gallium nitride layer, comprising the step of forming a gallium nitride layer by spraying a second reactant material containing oxygen on the gallium nitride layer. In the first paragraph, The above first source material is a method for forming a gallium nitride layer containing trimethyl gallium (TMGa). In the first paragraph, A method for forming a gallium nitride layer, wherein the first reactant material contains either nitrogen (N ₂ ) or ammonia (NH ₃ ). In the first paragraph, A method for forming a gallium nitride layer, wherein the second reactant material contains either oxygen (O ₂ ) or nitrous oxide (N ₂ O). In the first paragraph, A method for forming a gallium nitride layer, the method further comprising a step of forming a plasma containing hydrogen (H ₂ ) gas or argon (Ar) gas between the step of injecting the source material and the step of injecting the first reactant material. In the first paragraph, A method for forming a gallium nitride layer, wherein the step of injecting the first reactant material includes a step of forming a plasma containing oxygen. In the first paragraph, A method for forming a gallium nitride layer, further comprising a step of forming a plasma containing hydrogen (H ₂ ) gas or argon (Ar) gas after the step of injecting the second reactant material. A method for forming a gallium nitride (GaON) layer on a substrate, A step of forming a first gallium nitride layer on the substrate; and Comprising a step of forming a second gallium nitride layer on the first gallium nitride layer, A method for forming a gallium oxynitride layer, wherein the step of forming one of the first gallium oxynitride layer and the second gallium oxynitride layer uses atomic layer deposition (ALD), and the step of forming the other gallium oxynitride layer uses chemical vapor deposition (CVD). In Article 8, A method for forming a gallium nitride layer, wherein the step of forming the first gallium nitride layer uses atomic layer deposition (ALD), and the step of forming the second gallium nitride layer uses chemical vapor deposition (CVD). In Article 9, Comprising a step of forming a third gallium nitride layer on the second gallium nitride layer, The step of forming the third gallium nitride layer is a method for forming a gallium nitride layer using an atomic layer deposition (ALD) method. In Article 8, A method for forming a gallium nitride layer, wherein the step of forming the first gallium nitride layer uses a chemical vapor deposition method (CVD), and the step of forming the second gallium nitride layer uses an atomic layer deposition method (ALD). In Article 11, Comprising a step of forming a third gallium nitride layer on the second gallium nitride layer, The step of forming the third gallium nitride layer is a method for forming a gallium nitride layer using a chemical vapor deposition method (CVD). In Article 8, A method for forming a gallium oxynitride layer, the step of forming one of the first gallium oxynitride layer and the second gallium oxynitride layer using the atomic layer deposition (ALD) method, using the gallium oxynitride layer forming method of any one of claims 1 to 7. In Article 8, A method for forming a gallium oxynitride layer, the step of forming the other of the first gallium oxynitride layer and the second gallium oxynitride layer using the chemical vapor deposition (CVD) method including the step of separating a source material containing gallium (Ga), a first reactant material containing nitrogen, and a second reactant material containing oxygen. In Article 14, The above first source material contains trimethyl gallium (TMGa), The above first reactant material contains either nitrogen (N2) or ammonia (NH3), A method for forming a gallium nitride layer, wherein the second reactant material contains either oxygen (O2) or nitrous oxide (N2O). In Article 14, A method for forming a gallium nitride layer, the method further comprising a step of forming a plasma containing hydrogen (H2) gas or argon (Ar) gas after the step of injecting the first source material, the first reactant material, and the second reactant material. In Article 14, A method for forming a gallium nitride layer, wherein the step of injecting the first source material, the first reactant material, and the second reactant material further includes the step of forming a plasma containing oxygen. A method for forming a gallium nitride layer in a chamber including an upper dome, a lower dome, and a heater, A step of spraying a source material containing gallium (Ga) onto a substrate provided in the chamber; A step of forming a gallium nitride layer by spraying a first reactant material containing nitrogen; and A method for forming a gallium nitride layer, comprising the step of forming a gallium nitride layer by spraying a second reactant material containing oxygen on the gallium nitride layer.

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