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WO2024241699A1 - Procédé et système de traitement de substrat - Google Patents

Procédé et système de traitement de substrat Download PDF

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Publication number
WO2024241699A1
WO2024241699A1 PCT/JP2024/012409 JP2024012409W WO2024241699A1 WO 2024241699 A1 WO2024241699 A1 WO 2024241699A1 JP 2024012409 W JP2024012409 W JP 2024012409W WO 2024241699 A1 WO2024241699 A1 WO 2024241699A1
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WO
WIPO (PCT)
Prior art keywords
peripheral
modified region
substrate
wafer
peripheral modified
Prior art date
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Pending
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PCT/JP2024/012409
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English (en)
Japanese (ja)
Inventor
陽平 山下
康隆 溝本
中尾　淳一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
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Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to CN202480031470.6A priority Critical patent/CN121100394A/zh
Publication of WO2024241699A1 publication Critical patent/WO2024241699A1/fr
Anticipated expiration legal-status Critical
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H10P52/00—

Definitions

  • This disclosure relates to a substrate processing method and a substrate processing system.
  • Patent Documents 1 to 3 discloses a substrate processing system that processes a polymerized substrate in which a first substrate and a second substrate are bonded together.
  • the substrate processing system includes a modified layer forming device that forms a modified layer inside the first substrate, an interface processing device that modifies the interface where the first substrate and the second substrate are bonded together, and an edge removing device that removes the edge of the first substrate.
  • the technology disclosed herein appropriately removes the peripheral portion of the first substrate to be removed in a polymerized substrate in which a first substrate and a second substrate are bonded together.
  • One aspect of the present disclosure is a substrate processing method for processing a laminated substrate in which a first substrate and a second substrate are bonded together, the method comprising the steps of: forming a first peripheral modified region inside the first substrate along the boundary between a peripheral portion and a central portion of the first substrate to be removed; forming a second peripheral modified region radially inside the first substrate at least radially outward from the first peripheral modified region; removing an upper portion of the peripheral portion from the first substrate using the first peripheral modified region and the second peripheral modified region as base points; and forming the second peripheral modified region, such that after the first substrate from which the upper portion of the peripheral portion has been removed is thinned, the first peripheral modified region and the second peripheral modified region intersect at a position where they do not remain inside the first substrate.
  • the peripheral portion of the first substrate to be removed can be appropriately removed.
  • FIG. 2 is an explanatory diagram of a laminated wafer to be processed.
  • 1 is a plan view showing an outline of a configuration of a wafer processing system;
  • FIG. 2 is a plan view showing an outline of the configuration of a laser irradiation device.
  • FIG. 2 is a side view showing an outline of the configuration of a laser irradiation device.
  • 1A to 1C are explanatory views showing main steps of a wafer processing according to a first embodiment.
  • 10A to 10C are explanatory views showing main steps of a wafer processing according to a second embodiment.
  • FIG. 11 is an explanatory diagram of a second peripheral modified region in another embodiment.
  • FIG. 11 is an explanatory diagram of a first peripheral modified region in another embodiment.
  • FIG. 11 is an explanatory diagram of a second peripheral modified region in another embodiment.
  • FIG. 13 is an explanatory diagram of a third peripheral modified region in another embodiment.
  • 13A to 13C are explanatory diagrams of a method for removing the upper peripheral edge according to another embodiment.
  • 13A to 13C are explanatory diagrams of a method for removing the upper peripheral edge according to another embodiment.
  • 13 is an explanatory diagram showing the formation of a first peripheral modified region and a second peripheral modified region in another embodiment.
  • a first wafer which is a semiconductor substrate (hereafter referred to as a "wafer") having a number of electronic circuits and other devices formed on its surface, is bonded to a second wafer to form a laminated wafer, in which the first wafer is thinned.
  • a process known as edge trimming is performed to remove the peripheral portion of the first wafer.
  • the edge trim of the first wafer is performed, for example, in a substrate processing system disclosed in Patent Documents 1 to 3.
  • a laser beam is irradiated along the boundary between the peripheral portion and the central portion of the first wafer to be removed, forming a modified layer inside the first wafer.
  • a laser beam is irradiated to the interface at the peripheral portion where the first wafer and the second wafer are joined, forming a modified surface.
  • the peripheral portion of the first wafer is removed using the modified layer as a base point. At this time, since a modified surface has been formed on the peripheral portion, the bonding force between the first wafer and the second wafer can be reduced and the peripheral portion can be appropriately removed.
  • a laminated wafer T which is a laminated substrate formed by bonding a first wafer W as a first substrate and a second wafer S as a second substrate, as shown in FIG. 1.
  • the surface of the first wafer W that is bonded to the second wafer S is referred to as the front surface Wa
  • the surface opposite the front surface Wa is referred to as the back surface Wb.
  • the surface of the second wafer S that is bonded to the first wafer W is referred to as the front surface Sa
  • the surface opposite the front surface Sa is referred to as the back surface Sb.
  • the first wafer W is a semiconductor wafer such as a silicon substrate, and at least one film is laminated on the front surface Wa side.
  • the film formed on the front surface Wa side is referred to as a "laminated film".
  • the laminated film includes a device layer Dw and a bonding film Fw.
  • the device layer Dw includes a plurality of devices.
  • the bonding film Fw for example, an oxide film (THOX film, SiO 2 film, TEOS film), a SiC film, a SiCN film, or an adhesive is used.
  • the first wafer W is bonded to the second wafer S via the bonding film Fw.
  • peripheral portion We of the first wafer W is chamfered, and the cross section of the peripheral portion We becomes thinner toward its tip.
  • the peripheral portion We is a portion to be removed in the edge trim described later, and is, for example, in the range of 0.5 mm to 3 mm in the radial direction from the outer end of the first wafer W.
  • a region of the first wafer W that is radially inward of the peripheral edge portion We to be removed may be referred to as a central portion Wc.
  • the second wafer S has, for example, the same configuration as the first wafer W. That is, a device layer Ds and a bonding film Fs are formed as a laminated film on the surface Sa side, and the peripheral portion is chamfered. Note that the second wafer S does not have to be a device wafer on which a device layer Ds is formed, and may be, for example, a support wafer that supports the first wafer W. In such a case, the second wafer S functions as a protective material that protects the device layer Dw of the first wafer W.
  • FIG. 1 illustrates an example in which a device layer and a bonding film are formed as laminated films on the surfaces of the first wafer W and the second wafer S.
  • the type of laminated film and the number of layers are not limited to this.
  • the wafer processing system 1 has a configuration in which a loading/unloading station 2 and a processing station 3 are integrally connected.
  • a loading/unloading station 2 for example, a cassette C capable of housing multiple polymerized wafers T is loaded and unloaded between the loading/unloading station 2 and the outside.
  • the processing station 3 is equipped with various processing devices that perform the desired processing on the polymerized wafers T.
  • the loading/unloading station 2 is provided with a cassette mounting table 10 on which a cassette C capable of storing multiple overlapping wafers T is mounted.
  • a wafer transport device 20 is provided adjacent to the cassette mounting table 10 on the positive X-axis side of the cassette mounting table 10.
  • the wafer transport device 20 moves on a transport path 21 extending in the Y-axis direction, and is configured to be able to transport overlapping wafers T between the cassette C on the cassette mounting table 10 and a transition device 30 described below.
  • the loading/unloading station 2 is provided with a transition device 30 adjacent to the wafer transport device 20 on the positive X-axis side of the wafer transport device 20 for transferring the laminated wafer T between the processing station 3 and the wafer transport device 20.
  • Processing station 3 is equipped with a wafer transport device 40, a laser irradiation device 50, an upper peripheral edge removal device 60, a lower peripheral edge removal device 70, and a cleaning device 80.
  • the wafer transport device 40 is provided on the positive X-axis side of the transition device 30.
  • the wafer transport device 40 is configured to be freely movable on a transport path 41 extending in the X-axis direction, and is configured to be able to transport the polymerized wafer T to the transition device 30, laser irradiation device 50, upper peripheral edge removal device 60, lower peripheral edge removal device 70, and cleaning device 80 in the loading/unloading station 2.
  • the laser irradiation device 50 irradiates the inside of the first wafer W with a modification laser beam (e.g., a YAG laser or a fiber laser) to form a peripheral modification layer that serves as a base point for peeling off the upper part of the peripheral portion We.
  • a modification laser beam e.g., a YAG laser or a fiber laser
  • the laser irradiation device 50 also has a control device 51, which will be described later.
  • the laser irradiation device 50 has a chuck 100 that holds the overlapped wafer T on its upper surface.
  • the chuck 100 holds the back surface Sb of the second wafer S by suction, with the first wafer W on the upper side and the second wafer S on the lower side.
  • the chuck 100 is supported by a slider table 102 via an air bearing 101.
  • a rotation mechanism 103 is provided on the lower side of the slider table 102.
  • the rotation mechanism 103 has a built-in motor as a drive source.
  • the chuck 100 is configured to be rotatable around a vertical axis by the rotation mechanism 103 via the air bearing 101.
  • the slider table 102 is configured to be movable on a rail 106 that is provided on a base 105 and extends in the Y-axis direction via a moving mechanism 104 provided on the lower side.
  • the drive source of the moving mechanism 104 is not particularly limited, but a linear motor is used, for example.
  • a laser head 110 is provided above the chuck 100.
  • the laser head 110 has a lens 111.
  • the lens 111 is a cylindrical member provided on the underside of the laser head 110, and irradiates laser light into the inside of the laminated wafer T held by the chuck 100, more specifically, into the inside of the first wafer W.
  • the laser head 110 is supported by a support member 112.
  • the laser head 110 is configured to be freely raised and lowered by a lifting mechanism 114 along a rail 113 extending in the vertical direction.
  • the laser head 110 is also configured to be freely moved in the Y-axis direction by a moving mechanism 115.
  • the lifting mechanism 114 and the moving mechanism 115 are each supported by a support column 116.
  • an imaging mechanism 120 is provided above the chuck 100, on the Y-axis positive side of the laser head 110.
  • the imaging mechanism 120 has at least one camera. The image captured by the camera is output to the control device 51 or the control device 90 described below.
  • the laser irradiation device 50 determines the position of the overlapped wafer T on the chuck 100 based on the image obtained by the imaging mechanism 120, and based on this, aligns the overlapped wafer T and determines the irradiation position of the laser light.
  • the imaging mechanism 120 is configured to be freely raised and lowered by a lifting mechanism 121, and is further configured to be freely moved in the Y-axis direction by a moving mechanism 122.
  • the moving mechanism 122 is supported by a support column 116.
  • the chuck 100 is configured to rotate relative to the laser head 110 and move horizontally by the rotation mechanism 103 and the movement mechanism 104, but the laser head 110 may be configured to rotate relative to the chuck 100 and move horizontally. Also, both the chuck 100 and the laser head 110 may be configured to rotate relative to each other and move horizontally.
  • the upper peripheral edge removal device 60 shown in FIG. 2 removes the upper part of the peripheral edge We of the first wafer W (hereinafter referred to as the "upper peripheral edge Wea"; see FIG. 5 described below) using the peripheral modification layer formed by the laser irradiation device 50 as a base point.
  • the method for removing the upper peripheral edge Wea can be selected arbitrarily.
  • the upper peripheral edge removal device 60 may insert a wedge-shaped blade between the first wafer W and the second wafer S.
  • the lower peripheral edge removal device 70 irradiates the lower part of the peripheral edge We (hereinafter referred to as the "lower peripheral edge Web"; see FIG. 5 described below) of the first wafer W with a removal laser beam (e.g., a UV femtosecond laser) and removes the lower peripheral edge Web by laser ablation.
  • the lower peripheral edge removal device 70 also has a control device 71 described below.
  • the lower peripheral edge removal device 70 has a configuration similar to that of the laser irradiation device 50, for example. That is, the lower peripheral edge removal device 70 can include a chuck that holds the polymerized wafer T, a laser head provided above the chuck, and an imaging mechanism.
  • the chuck is configured to be freely movable in the horizontal direction and rotatable about a vertical axis.
  • the laser head is configured to be freely movable in the horizontal direction and movable up and down.
  • the laser head is configured to be able to irradiate the above-mentioned removal laser light that is irradiated to the lower peripheral edge Web instead of the modification laser light in the laser irradiation device 50.
  • the upper peripheral edge removal device 60 removes the upper peripheral edge Wea
  • the lower peripheral edge removal device 70 removes the lower peripheral edge Web, thereby removing the entire peripheral edge Wea, i.e., performing edge trimming.
  • the cleaning device 80 performs a cleaning process on the first wafer W and the second wafer S after the edges have been trimmed by the upper edge removal device 60 and the lower edge removal device 70, and removes particles from these wafers.
  • the cleaning method can be selected arbitrarily.
  • the above-described wafer processing system 1 is provided with a control device 51, a control device 71, and at least one control device 90.
  • the control device 51 individually controls the operation of the laser irradiation devices 50.
  • the control device 71 individually controls the operation of the lower peripheral edge removal devices 70.
  • the control device 90 is responsible for overall control of a series of wafer processes in the wafer processing system 1.
  • Controller 51, controller 71 and controller 90 each process computer executable instructions that cause laser irradiation apparatus 50, lower edge removal apparatus 70 and wafer processing system 1 to perform the various steps described in this disclosure.
  • Controller 51, controller 71 and controller 90 can each be configured to control elements of laser irradiation apparatus 50, lower edge removal apparatus 70 and wafer processing system 1 to perform the various steps described herein.
  • part or all of controller 51 may be included in laser irradiation apparatus 50
  • part or all of controller 71 may be included in lower edge removal apparatus 70
  • part or all of controller 90 may be included in wafer processing system 1.
  • the control device 51, the control device 71, and the control device 90 may each include a processing unit, a storage unit, and a communication interface.
  • the control device 51, the control device 71, and the control device 90 are each realized, for example, by a computer.
  • the processing unit may be configured to read a program that provides logic or routines that enable various control operations to be performed from the storage unit, and to perform various control operations by executing the read program.
  • This program may be stored in the storage unit in advance, or may be acquired via a medium when necessary.
  • the acquired program is stored in the storage unit, and is read from the storage unit by the processing unit and executed.
  • the medium may be various storage media that can be read by a computer, or may be a communication line connected to the communication interface.
  • the storage medium may be temporary or non-temporary.
  • the processing unit may be a CPU (Central Processing Unit), or may be one or more circuits.
  • the storage unit may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), a SSD (Solid State Drive), or a combination thereof.
  • the communication interface may communicate between the laser irradiation device 50, the lower peripheral edge removal device 70, and the wafer processing system 1 via a communication line such as a LAN (Local Area Network).
  • LAN Local Area Network
  • control device 51 and the control device 71 are installed separately for the laser irradiation device 50 and the lower peripheral edge removal device 70, respectively, but these control devices 51 and 71 may be configured integrally with the control device 90. In other words, the operation of the laser irradiation device 50 and the lower peripheral edge removal device 70 may be controlled by the control device 90.
  • the wafer processing involves edge trimming to remove the peripheral portion We of the first wafer W.
  • the peripheral portion We is removed in stages by dividing it into an upper peripheral portion Wea and a lower peripheral portion Web.
  • the first wafer W and the second wafer S are bonded together outside the wafer processing system 1 before being processed in the wafer processing system 1, and a laminated wafer T is formed in advance.
  • FIG. 5 is an explanatory diagram showing the main steps of wafer processing, and the explanatory diagram shows a thinned surface G (surface to be thinned) when thinning the central portion Wc of the first wafer W.
  • a thinning device for thinning the central portion Wc of the first wafer W such as a grinding device (not shown), may be provided outside the wafer processing system 1 as in this embodiment, or may be provided in the wafer processing system 1.
  • a cassette C containing multiple overlapping wafers T is placed on the cassette placement table 10 of the loading/unloading station 2.
  • the overlapping wafers T in the cassette C are removed by the wafer transfer device 20 and transferred to the laser irradiation device 50 via the transition device 30 and the wafer transfer device 40.
  • a modification laser beam L1 is irradiated to the inside of the first wafer W to form a first peripheral modification layer M1 and a second peripheral modification layer M2.
  • first peripheral modified layer M1 When forming the first peripheral modified layer M1, laser light L1 is irradiated into the first wafer W along the boundary between the peripheral portion We and the central portion Wc of the first wafer W.
  • the boundary between the peripheral portion We and the central portion Wc is, for example, a boundary that extends in the thickness direction of the first wafer W.
  • a first crack C1 extends from the first peripheral modified layer M1 along the boundary between the peripheral portion We and the central portion Wc.
  • a first peripheral modified region N1 including the first peripheral modified layer M1 and the first crack C1 is formed.
  • the first peripheral modified region N1 extends between the back surface Wb of the first wafer W and a second peripheral modified region N2 described later.
  • the second peripheral modified layer M2 When forming the second peripheral modified layer M2, laser light L1 is irradiated in the surface direction (radial direction) inside the first wafer W at least radially outward from the first peripheral modified region N1 (first peripheral modified layer M1 and first crack C1) and above the thinned surface G of the first wafer W.
  • the second peripheral modified layer M2 When the second peripheral modified layer M2 is formed above the thinned surface G by this laser light L1, the second crack C2 extends from the second peripheral modified layer M2 in the surface direction of the first wafer W.
  • the second peripheral modified region N2 including the second peripheral modified layer M2 and the second crack C2 is formed.
  • the second peripheral modified region N2 is formed so that at least the point Q where the first peripheral modified region N1 and the second peripheral modified region N2 intersect (hereinafter referred to as the "intersection Q") is located above the thinned surface G.
  • the first peripheral modified region N1 and the second peripheral modified region N2 serve as the base point when removing the upper peripheral portion Wea.
  • the order of forming the first peripheral modified region N1 and the second peripheral modified region N2 is arbitrary, but it is preferable to form the first peripheral modified region N1 after forming the second peripheral modified region N2.
  • the extension of the first crack C1 in the first peripheral modified region N1 connects to the second peripheral modified region N2, preventing the first crack C1 from extending to the device layer Dw, and as a result, preventing damage to the device layer Dw.
  • the laminated wafer T in which the first peripheral modified region N1 and the second peripheral modified region N2 have been formed inside the first wafer W, is then transported by the wafer transport device 40 to the upper peripheral removal device 60.
  • the upper peripheral removal device 60 a blade B is inserted between the first wafer W and the second wafer S as shown in FIG. 5(b), and the upper peripheral portion Wea is removed from the first wafer W.
  • the upper peripheral portion Wea is peeled off and removed from the central portion Wc of the first wafer W, using the first peripheral modified region N1 and the second peripheral modified region N2 as base points.
  • the lower peripheral portion Web remains on the peripheral portion We of the first wafer W.
  • the laminated wafer T from which the upper peripheral edge Wea of the first wafer W has been removed is then transported by the wafer transport device 40 to the lower peripheral edge removal device 70.
  • the lower peripheral edge Web is irradiated with removal laser light L2 as shown in FIG. 5(c).
  • the lower peripheral edge Web irradiated with this laser light L2 is removed by laser ablation.
  • the laminated wafer T from which the lower peripheral edge Web of the first wafer W has been removed is then transported by the wafer transport device 40 to the cleaning device 80.
  • the cleaning device 80 the first wafer W and/or the second wafer S from which the peripheral edge We has been removed are cleaned.
  • the laminated wafer T which has been subjected to all the processes, is transferred by the wafer transfer device 20 to the cassette C on the cassette mounting table 10 via the transition device 30. This completes the series of wafer processing steps in the wafer processing system 1.
  • the main difference between the second embodiment and the first embodiment is the modification processing of the first wafer W in the laser irradiation device 50.
  • a modification laser beam L1 is irradiated to the inside of the first wafer W to form a first peripheral modified layer M1, a second peripheral modified layer M2, and a third peripheral modified layer M3.
  • the method of forming the first peripheral modified layer M1 and the second peripheral modified layer M2 is the same as the method of forming the first peripheral modified layer M1 and the second peripheral modified layer M2 in the first embodiment, respectively. Then, a first peripheral modified region N1 including the first peripheral modified layer M1 and the first crack C1, and a second peripheral modified region N2 including the second peripheral modified layer M2 and the second crack C2 are formed.
  • the third peripheral modified layer M3 When forming the third peripheral modified layer M3, laser light L1 is irradiated from the radial outside of the second peripheral modified region N2 (second peripheral modified layer M2 and second crack C2) toward the second wafer S, for example in the thickness direction of the first wafer W.
  • the third peripheral modified layer M3 is formed by this laser light L1
  • the third crack C3 extends from the third peripheral modified layer M3 in the thickness direction of the first wafer W.
  • a third peripheral modified region N3 including the third peripheral modified layer M3 and the third crack C3 is formed.
  • the third peripheral modified region N3 extends between the second peripheral modified region N2 and the surface Wa of the first wafer W.
  • the first peripheral modified region N1, the second peripheral modified region N2, and the third peripheral modified region N3 serve as the base point when removing the upper peripheral portion Wea.
  • the order of forming the first peripheral modified region N1, the second peripheral modified region N2, and the third peripheral modified region N3 is arbitrary, but as in the first embodiment, it is preferable to form the first peripheral modified region N1 after forming the second peripheral modified region N2.
  • a blade B is inserted between the first wafer W and the second wafer S, and the upper peripheral edge Wea is removed from the first wafer W.
  • the upper peripheral edge Wea is peeled off and removed from the center Wc of the first wafer W, using the first peripheral modified region N1, the second peripheral modified region N2, and the third peripheral modified region N3 as base points.
  • the lower peripheral edge Web is irradiated with removal laser light L2.
  • the lower peripheral edge Web irradiated with this laser light L2 is removed by laser ablation.
  • the upper peripheral portion Wea can be removed based on the peripheral modified region including at least the first peripheral modified region N1 and the second peripheral modified region N2.
  • the lower peripheral portion Web can be removed by laser ablation. Therefore, the peripheral portion We of the first wafer W can be appropriately removed to perform edge trimming appropriately.
  • the peripheral portion We will be removed and a portion of the second peripheral modified region N2 will remain inside the first wafer W after further thinning.
  • the second peripheral modified region N2 is formed inside the first wafer W such that at least the intersection Q of the first peripheral modified region N1 and the second peripheral modified region N2 is located above the thinned surface G of the first wafer W. In this case, even if the second peripheral modified region N2 is formed radially inward from the first peripheral modified region N1, the second peripheral modified region N2 can be removed when the central portion Wc of the first wafer W is thinned.
  • the thickness of the lower peripheral web remaining after removing the upper peripheral web is smaller than the thickness of the lower peripheral web in the second embodiment.
  • the second embodiment can reduce the amount of laser light L2 applied when removing the lower peripheral web with the lower peripheral web removal device 70 compared to the first embodiment.
  • the second peripheral modified layer M2 when forming the second peripheral modified region N2, it is preferable to form the second peripheral modified layer M2 from the radial outside to the inside.
  • the stress acting by the laser light L1 accumulates inside the first wafer W, and the second peripheral modified layer M2 may be formed in an unexpected direction.
  • the stress acting by the laser light L1 can be released from the radial inside to the outside, making it easier to appropriately control the formation position of the second peripheral modified layer M2.
  • the extension of the first crack C1 in the first peripheral modified region N1 connects to the second peripheral modified region N2.
  • the second peripheral modified region N2 may extend radially inward from the first peripheral modified region N1.
  • the portion of the second peripheral modified region N2 that extends radially inward from the first peripheral modified region N1 is referred to as the overstroke P.
  • laser light L1 may be irradiated radially inward from the first peripheral modified region N1 to form a second peripheral modified layer M2, and a second crack C2 may be extended from the second peripheral modified layer M2 radially outward from the first peripheral modified region N1.
  • the laser beam L1 may be irradiated to the radially inner side of the first peripheral modified region N1, and the laser beam L1 may also be irradiated to the radially outer side of the first peripheral modified region N1, so that the second crack C2 extends from the second peripheral modified layer M2 to the radially outer side of the first peripheral modified region N1, forming an overstroke P including the second peripheral modified layer M2 and the second crack C2.
  • the second peripheral modified region N2 is formed as described above, and then the first peripheral modified region N1 is formed.
  • the second peripheral modified region N2 extends radially inward from the first peripheral modified region N1
  • the extension of the first crack C1 in the first peripheral modified region N1 can be reliably connected by the second peripheral modified region N2.
  • the first crack C1 can be reliably prevented from extending to the device layer Dw, and damage to the device layer Dw can be prevented.
  • an unexpected crack may occur from the radially inner tip of the second peripheral modified region N2, and this crack may extend to the surface Wa of the first wafer W and cause peeling.
  • the intersection of the first peripheral modified region N1 and the second peripheral modified region N2, which serves as the fulcrum when removing the upper peripheral edge Wea, and the radially inner tip of the second peripheral modified region N2, which serves as the peeling fulcrum, can be shifted.
  • the first peripheral modified region N1 is formed in the thickness direction of the first wafer W, but the direction in which the first peripheral modified region N1 is formed is not limited to this.
  • the first peripheral modified region N1 may be formed in an oblique direction along the crystal orientation of silicon in the first wafer W.
  • the 111 crystal orientation of silicon is in a direction of about 70 degrees from the vertical direction, and the first peripheral modified region N1 is formed along this 111 crystal orientation.
  • the upper peripheral Wea can be easily removed in the first peripheral modified region N1.
  • the insertion force and insertion amount of the blade B when removing the upper peripheral Wea can be reduced, thereby suppressing unexpected cracks and peeling at the radially inner tip of the second peripheral modified region N2 described above.
  • the second peripheral modified region N2 is formed in the surface direction of the first wafer W, but the direction in which the second peripheral modified region N2 is formed is not limited to this.
  • the second peripheral modified region N2 may be formed in an oblique direction relative to the surface direction of the first wafer W. It is preferable to form this second peripheral modified region N2 in an oblique direction that rises from the radially outer side toward the inner side. In such a case, it is possible to prevent the second peripheral modified region N2 from extending to a position lower than the thinned surface G of the first wafer W in the central portion Wc of the first wafer W.
  • the third peripheral modified region N3 is formed in the thickness direction of the first wafer W, but the direction in which the third peripheral modified region N3 is formed is not limited to this.
  • the third peripheral modified region N3 may be formed in an oblique direction relative to the thickness direction of the first wafer W.
  • the upper peripheral edge removal device 60 inserts the blade B in the surface direction between the first wafer W and the second wafer S to remove the upper peripheral edge Wea, but the method of removing the upper peripheral edge Wea is not limited to this.
  • a pressure unit 200 may be used to pressurize the upper peripheral edge Wea from above, thereby applying stress downward along the first peripheral modified region N1.
  • the pressure unit 200 may come into contact with the upper peripheral edge Wea and physically press it, or the pressure unit 200 may apply an impact to the upper peripheral edge Wea by spraying an air blow or water jet toward the upper peripheral edge Wea.
  • the first peripheral modified region N1 is formed in an oblique direction, and in such a case, the upper peripheral edge Wea can be removed more easily.
  • the upper peripheral edge removal device 60 may use a clamping unit 210 to clamp the upper peripheral edge Wea from above as shown in FIG. 12, and apply stress downward along the first peripheral modified region N1.
  • the clamping unit 210 has an upper clamping member 211 and a lower clamping member 212.
  • the upper clamping member 211 abuts against the upper peripheral edge Wea
  • the lower clamping member 212 abuts against a chuck 213 that holds the second wafer S, and clamps the overlapped wafer T.
  • the first peripheral modified region N1 is also formed in an oblique direction, and in this case, the upper peripheral edge Wea can be removed more easily.
  • the blade B shown in FIG. 5(b) may be inserted between the first wafer W and the second wafer S, and the blade B may be moved upward to apply upward stress along the first peripheral modification region N1.
  • the first peripheral modified layer M1 (first peripheral modified region N1) and the second peripheral modified layer M2 (second peripheral modified region N2) were formed in the laser irradiation device 50, but these peripheral modified layers M1 and M2 may be formed in a different laser irradiation device.
  • the first peripheral modified layer M1 (first peripheral modified region N1), the second peripheral modified layer M2 (second peripheral modified region N2), and the third peripheral modified layer M3 (third peripheral modified region N3) were formed, but these peripheral modified layers M1, M2, and M3 may be formed in a different laser irradiation device.
  • the second peripheral modified region N2 was formed so that the intersection point Q was located above the thinned surface G of the first wafer W. In this regard, if the second peripheral modified region N2 is not formed radially inward from the first peripheral modified region N1, the second peripheral modified region N2 may be formed so that the intersection point Q is located below the thinned surface G.
  • the first peripheral modified region N1 may first be formed below the thinned surface G as shown in FIG. 13(a), and then the second peripheral modified region N2 may be formed to be located below the thinned surface G as shown in FIG. 13(b). In such a case, a crack that occurs between the first peripheral modified layer M1 of the first peripheral modified region N1 and the second peripheral modified region N2 is connected.
  • the second crack C2 extending from the second peripheral modified layer M2 formed later is connected to the first peripheral modified layer M1 formed earlier and located below the thinned surface G, so that the second crack C2 is not formed radially inward from the first peripheral modified region N1. In other words, the second crack C2 does not remain inside the first wafer W after thinning.
  • the first peripheral modified region N1 may be formed after the second peripheral modified region N2 is formed.
  • a crack that occurs between the second peripheral modified layer M2 and the first peripheral modified region N1 is connected.
  • the second peripheral modified layer M2 that is formed later may be connected to the first crack C1 that extends from the first peripheral modified layer M1 that is formed earlier, so that the second peripheral modified region N2 is not formed radially inward (toward the device layer Dw) of the first peripheral modified region N1.
  • the timing for connecting the first peripheral modified region N1 and the second peripheral modified region N2, i.e., the timing for connecting the cracks may be the timing for inserting the blade B between the first wafer W and the second wafer S when removing the upper peripheral portion Wea.
  • the thickness of the lower peripheral web can be reduced, thereby reducing the amount of the lower peripheral web that needs to be removed. This makes it possible to shorten the time required to remove the lower peripheral web. In addition, the total amount of energy of the laser light L2 when removing the lower peripheral web can also be reduced.
  • the first peripheral modified region N1 may be formed to extend from the back surface Wb (upper) to the front surface Wa (lower) of the first wafer W, slanting from the radially inner side to the radially outer side of the first wafer W.
  • the angle of the top Wep of the peripheral upper part Wea formed by the first peripheral modified region N1 and the second peripheral modified region N2 becomes an obtuse angle (90 degrees or more).
  • the load on the top Wep of the peripheral upper part Wea is smaller than when the angle is a right angle.
  • the first peripheral modified region N1 may be formed to have a curved shape that is convex downward in side view.
  • the angle of the apex Wep of the peripheral upper portion Wea formed by the first peripheral modified region N1 and the second peripheral modified region N2 can be made an obtuse angle, while preventing the first peripheral modified region N1 from extending radially inward. As a result, the radial distance of the first peripheral modified region N1 can be reduced.
  • the first peripheral modified region N1 When the first peripheral modified region N1 is formed to be inclined or curved as shown in FIG. 13, it is preferable to form it from the bottom up.
  • the first crack C1 can be caused to extend upward from the first peripheral modified layer M1 at the lower end of the first peripheral modified region N1; in other words, the first crack C1 can be prevented from extending in an unexpected direction, for example, toward the device layer Dw. As a result, damage to the device layer Dw can be prevented, and product yield can be improved.
  • the laser irradiation device 50 forms at least the first peripheral modified region N1 and the second peripheral modified region N2, but it is also possible to form a plurality of divided modified regions that serve as base points for dividing the upper peripheral region Wea into small pieces.
  • Each divided modified region extends in the thickness direction of the first wafer W radially outside the first peripheral modified region N1.
  • a divided modified layer is formed by irradiating the laser light L1 in the thickness direction of the first wafer W, and a crack is further extended from the divided modified layer in the thickness direction of the first wafer W to form a divided modified region including these divided modified layers and cracks.
  • a line of divided modified regions extending radially outward from the first peripheral modified region N1 is formed, and a plurality of lines of one line of divided modified regions are further formed in the circumferential direction.
  • the upper peripheral edge removal device 60 weaves the upper peripheral edge, it is divided into multiple pieces based on the multiple lines of divided modified areas.

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  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
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  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un procédé de traitement de substrat selon lequel un substrat à empilement dans lequel un premier et un second substrat sont liés, est traité. Le procédé de l'invention inclut : une étape au cours de laquelle une première région modification de bord périphérique est formée dans une partie interne dudit premier substrat, suivant une interface entre une partie bord périphérique et une partie centrale d'un objet cible de retrait au niveau dudit premier substrat ; une étape au cours de laquelle une seconde région modification de bord périphérique est formée dans une direction radiale dans la partie interne dudit premier substrat au moins côté externe de la direction radiale à partir de ladite première région modification de bord périphérique ; et une étape au cours de laquelle la partie supérieure de ladite partie bord périphérique est retirée dudit premier substrat avec lesdites première et seconde régions modification de bord périphérique pour points de référence. En raison de la formation de ladite seconde région modification de bord périphérique, et après amincissement dudit premier substrat auquel la partie supérieure de ladite partie bord périphérique est retirée, lesdites première et seconde régions modification de bord périphérique sont sécantes en une position qui ne reste pas dans la partie interne dudit premier substrat.
PCT/JP2024/012409 2023-05-23 2024-03-27 Procédé et système de traitement de substrat Pending WO2024241699A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019208359A1 (fr) * 2018-04-27 2019-10-31 東京エレクトロン株式会社 Système de traitement de substrat et procédé de traitement de substrat
JP2020136442A (ja) * 2019-02-18 2020-08-31 東京エレクトロン株式会社 レーザー加工装置の設定方法、レーザー加工方法、レーザー加工装置、薄化システム、および基板処理方法
WO2021215145A1 (fr) * 2020-04-20 2021-10-28 東京エレクトロン株式会社 Dispositif et procédé de traitement de substrat
JP2022136755A (ja) * 2021-03-08 2022-09-21 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
JP2023069018A (ja) * 2021-11-04 2023-05-18 浜松ホトニクス株式会社 レーザ加工装置、及び、レーザ加工方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019208359A1 (fr) * 2018-04-27 2019-10-31 東京エレクトロン株式会社 Système de traitement de substrat et procédé de traitement de substrat
JP2020136442A (ja) * 2019-02-18 2020-08-31 東京エレクトロン株式会社 レーザー加工装置の設定方法、レーザー加工方法、レーザー加工装置、薄化システム、および基板処理方法
WO2021215145A1 (fr) * 2020-04-20 2021-10-28 東京エレクトロン株式会社 Dispositif et procédé de traitement de substrat
JP2022136755A (ja) * 2021-03-08 2022-09-21 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
JP2023069018A (ja) * 2021-11-04 2023-05-18 浜松ホトニクス株式会社 レーザ加工装置、及び、レーザ加工方法

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