WO2024166889A1 - Plasma treatment device and method of controlling plasma treatment device - Google Patents

Abstract

The purpose of the present invention is to provide a plasma treatment device having a simple configuration which makes it possible to fully confirm a state of plasma within a treatment chamber. A plasma treatment device (1, 201) is provided with at least one antenna (71-73), and a plurality of light-receiving units (PD1-PD5) for detecting the light emission intensity of a plasma generation region. The plurality of light-receiving units include a first light-receiving unit (PD1) and a second light-receiving unit (PD2) that are arranged along a first direction in which at least one antenna extends.

Description

PLASMA PROCESSING APPARATUS AND METHOD FOR CONTROLLING PLASMA PROCESSING APPARATUS

The present invention relates to a plasma processing apparatus and a method for controlling the plasma processing apparatus.

Plasma processing apparatuses are known that perform plasma processing of substrates by generating inductively coupled plasma by passing a high-frequency current through an antenna installed in a processing chamber (vacuum vessel). Various methods have been proposed for detecting the plasma state in the processing chamber for such plasma processing apparatuses. For example, Patent Document 1 discloses a plasma processing apparatus that detects the light emission state of the plasma formed in the processing chamber using a plasma light emission state detection unit, and adjusts the characteristics of the antenna circuit based on the detection information from the plasma light emission state detection unit.

Japanese Patent Application Publication No. 2009-147301

The plasma state detection unit in Patent Document 1 is provided at positions corresponding to the center and edge of the substrate, and detects the plasma emission state at the center and edge of the substrate. In this configuration, the plasma state detection unit cannot monitor the plasma emission state in a direction along, for example, one side of the substrate. In other words, Patent Document 1 has the problem that it is not possible to adequately confirm the in-plane distribution of plasma within the processing chamber.

One aspect of the present invention aims to provide a plasma processing apparatus that can adequately check the plasma state in the processing chamber with a simple configuration.

In order to solve the above problems, a plasma processing apparatus according to one embodiment of the present invention includes at least one antenna that generates plasma in a vacuum chamber and a plurality of light receiving units that detect the light emission intensity of the plasma generation region, the plurality of light receiving units including a first light receiving unit and a second light receiving unit that are arranged along a first direction in which the at least one antenna extends.

In order to solve the above problems, a plasma processing apparatus according to one embodiment of the present invention includes a first antenna and a second antenna that generate plasma in a vacuum chamber, and a plurality of light receiving units that detect the light emission intensity of the plasma generation region, and the plurality of light receiving units include a third light receiving unit and a fourth light receiving unit that correspond to the first antenna and the second antenna, respectively, and are arranged along a second direction in which the first antenna and the second antenna are aligned.

In order to solve the above problem, a method for controlling a plasma processing apparatus according to one aspect of the present invention includes at least one antenna for generating plasma in a vacuum chamber, a plurality of light receiving units for detecting the light emission intensity of a plasma generation region, and a ground side impedance adjustment unit having a variable impedance connected to the ground side end of the antenna, the plurality of light receiving units including a first light receiving unit and a second light receiving unit arranged along a first direction in which the antenna extends, the method for controlling a plasma processing apparatus includes a first detection step of detecting a first light emission intensity of the plasma generation region corresponding to the first light receiving unit by the first light receiving unit, a second detection step of detecting a second light emission intensity of the plasma generation region corresponding to the second light receiving unit by the second light receiving unit, and a control step of controlling the impedance of the ground side impedance adjustment unit based on the first light emission intensity and the second light emission intensity.

In order to solve the above problems, a method for controlling a plasma processing apparatus according to one embodiment of the present invention includes a first antenna and a second antenna that generate plasma in a vacuum chamber, and a plurality of light receiving units that detect the light emission intensity of a plasma generation region, the plurality of light receiving units including a third light receiving unit and a fourth light receiving unit that correspond to the first antenna and the second antenna, respectively, and that are arranged along a second direction in which the first antenna and the second antenna are aligned, and includes a third detection step of detecting a third light emission intensity of the plasma generation region corresponding to the third light receiving unit by the third light receiving unit, a fourth detection step of detecting a fourth light emission intensity of the plasma generation region corresponding to the fourth light receiving unit by the fourth light receiving unit, and a control step of controlling the high frequency power supplied to the first antenna and the second antenna, respectively, based on the third light emission intensity and the fourth light emission intensity.

According to one aspect of the present invention, the plasma state within the processing chamber can be adequately confirmed using a simple configuration.

1 is a front cross-sectional view of a plasma processing apparatus according to an embodiment of the present invention; 2 is a side cross-sectional view of the plasma processing apparatus. FIG. 2 is a cross-sectional top view of the plasma processing apparatus. 2 is a functional block diagram showing a configuration of a main part of a monitoring device for the plasma processing apparatus. FIG. 3 is a diagram showing a schematic arrangement of a light receiving unit and an antenna circuit of the plasma processing apparatus. FIG. 4 is a flowchart illustrating an example of a process executed by the monitoring device. 10 is a flowchart showing another example of the process executed by the monitoring device. 10 is a flowchart showing still another example of the process executed by the monitoring device. 13 is a diagram illustrating a schematic arrangement of a light receiving unit and an antenna circuit of a plasma processing apparatus according to another embodiment of the present invention. FIG. 4 is a flowchart illustrating an example of a process executed by the monitoring device.

[Embodiment 1]
FIG. 1 is a front cross-sectional view of the plasma processing apparatus 1 cut along a plane including one antenna 7. FIG. 2 is a side cross-sectional view of the plasma processing apparatus 1 cut along a plane perpendicular to the direction in which the antennas 71 to 73 extend. FIG. 3 is a top cross-sectional view of the plasma processing apparatus 1 cut along a plane including the light receiving unit PD. Note that FIG. 3 also shows hypothetical positions of the stage 6 and the antennas 71 to 73 in the plasma processing apparatus 1 when viewed from above. First, a schematic configuration of the plasma processing apparatus 1 will be described below with reference to FIGS. 1 to 3.

<Configuration of Plasma Processing Apparatus 1>
1, the plasma processing apparatus 1 includes a housing 2, a flange 3, a vacuum cover 4, an antenna cover 5, a stage 6, an antenna 7, a high-frequency power supply 8, a light receiving unit PD, an impedance adjustment unit, and a monitoring device 10. In the plasma processing apparatus 1, a high-frequency voltage is applied from the high-frequency power supply 8 to the antenna 7, causing a high-frequency current to flow through the antenna 7. This generates an induced electric field in the housing 2, generating an inductively coupled plasma. The plasma processing apparatus 1 uses this inductively coupled plasma to perform a predetermined plasma processing on a substrate W placed in the housing 2.

Here, the substrate W is, for example, a substrate for a flat panel display (FPD) such as a liquid crystal display or an organic EL (Electro Luminescence) display, a flexible substrate, etc. Furthermore, the plasma processing performed on the substrate W is, for example, film formation by a plasma CVD (Chemical Vapor Deposition) method, etching, ashing, sputtering, etc.

This plasma processing apparatus 1 is also called a plasma CVD apparatus when film formation is performed by plasma CVD, a plasma etching apparatus when etching is performed, a plasma ashing apparatus when ashing is performed, and a plasma sputtering apparatus when sputtering is performed.

The plasma processing device 1 can also perform a cleaning process using inductively coupled plasma to clean off any substances adhering to the side walls of the housing 2 after plasma processing.

2 and 3, the plasma processing apparatus 1 is provided with a number of antennas 71 to 73 (first antenna 71, second antenna 72, and third antenna 73) arranged side by side. Here, when there is no need to distinguish between the antennas 71 to 73, they are simply referred to as antennas 7. A vacuum cover 4 and an antenna cover 5, which will be described later, are provided for each antenna 7. Hereinafter, in the plasma processing apparatus 1, the side on which the antenna 7 is provided is referred to as the upper side, and the side on which the stage 6 is provided is referred to as the lower side. The direction in which each of the antennas 7 extends is referred to as the left-right direction (first direction), and the direction in which the antennas 7 are arranged is referred to as the front-rear direction (second direction). Note that, in this embodiment, an example is shown in which the plasma processing apparatus 1 is provided with three antennas, the first antenna 71, the second antenna 72, and the third antenna 73, but the number of antennas 7 is not limited to this.

As shown in FIG. 3, the plasma processing apparatus 1 is provided with a number of light receiving units PD1 to PD5 that detect the light emission intensity of the plasma generation area HA. Here, when there is no need to particularly distinguish between the multiple light receiving units PD1 to PD5, they will simply be referred to as light receiving units PD.

<Case 2>
The housing 2 includes a housing main body 2a for forming a processing chamber in which the predetermined plasma processing is performed on the substrate W. The housing main body 2a is a box-shaped member that is open at the top.

A flange 3 having multiple openings is airtightly attached to the opening (housing opening 2b) of the housing main body 2a. The multiple openings of the flange 3 are closed by the vacuum cover 4. In other words, when the flange 3 and vacuum cover 4 are attached to the top side of the housing 2, the housing opening 2b is closed by the flange 3 and vacuum cover 4. In this way, by airtightly attaching the flange 3 and vacuum cover 4 to the housing main body 2a and the flange 3, respectively, the housing 2 forms a vacuum container including the above-mentioned processing chamber.

Furthermore, by attaching an antenna cover 5 (described later) inside the housing opening 2b, the internal space of the housing 2 is defined and a plasma generation area HA is formed inside the housing main body 2a. Inside this plasma generation area HA, a stage 6 and a substrate W supported by the stage 6 are arranged, and the plasma generation area HA essentially constitutes the processing chamber. In other words, in the housing 2, the antenna cover 5 separates the plasma generation area HA from the plasma non-generation area (the antenna accommodating space AK (described later)).

Also, as shown in FIG. 1, in the housing 2, a vacuum pump PO is connected to the housing body 2a. The inside of the plasma generation area HA is brought to a predetermined vacuum level by the vacuum pump PO at least during plasma processing.

The housing 2 may also include a processing gas supply unit (not shown) that introduces a processing gas corresponding to the above-mentioned specified plasma processing into the plasma generation area HA (processing chamber) that has been set to a specified degree of vacuum. The plasma processing is performed in an atmosphere of the processing gas. The processing gas is, for example, argon, hydrogen, nitrogen, silane, methane, oxygen, or nitrogen trifluoride.

<Flange 3>
The flange 3 has, for example, a rectangular frame having two mutually opposing first side portions 3a (FIG. 2) and two mutually opposing second side portions 3b (FIG. 1) that are perpendicular to the first side portions 3a. The flange 3 also has, for example, a third side portion 3c and a fourth side portion 3d that are provided from one second side portion 3b to the other second side portion 3b inside the frame. In other words, both ends of the third side portion 3c and the fourth side portion 3d are formed continuously with the second side portion 3b. The third side portion 3c and the fourth side portion 3d may be formed between the two first side portions 3a so as to be parallel to the first side portion 3a.

Furthermore, the first side portion 3a, the second side portion 3b, the third side portion 3c, and the fourth side portion 3d may each have a protruding portion (described later) that protrudes toward the housing opening portion 2b. Hereinafter, the first side portion 3a, the second side portion 3b, the third side portion 3c, and the fourth side portion 3d are collectively referred to as side portion 3h.

<Vacuum cover 4>
The plasma processing apparatus 1 is also configured such that the vacuum cover 4 that closes the housing opening 2b is detachably attached to the housing opening 2b. Here, the flange 3 may have a protrusion formed to gradually reduce the opening area of the housing opening 2b in a direction from the outside of the processing chamber toward the inside of the processing chamber. For example, each of the first side portion 3a, the third side portion 3c, and the fourth side portion 3d may have a first support portion that protrudes inside the housing opening 2b to engage the peripheral portion of the vacuum cover 4. The first support portion may be a part of the protrusion. The vacuum cover 4 is an example of an outer cover, and is supported by abutting against the upper surface of the second side portion 3b and abutting against the upper surfaces of the first support portions of the first side portion 3a, the third side portion 3c, and the fourth side portion 3d. The vacuum cover 4 is made of, for example, metal.

<Antenna cover 5>
In addition, in the plasma processing apparatus 1, an antenna cover 5 is removably supported on the flange 3 inside the housing opening 2b. Specifically, as shown in Figures 1 and 2, the antenna cover 5 includes an antenna housing portion 5a having a U-shaped cross section, for example. The antenna cover 5 also includes a cover support portion 5b and a cover opening 5c. The antenna cover 5 is made of a dielectric material such as alumina, for example, and constitutes a dielectric inner cover.

The antenna housing section 5a is formed to correspond to the shape of the antenna 7. The antenna housing section 5a is configured in a shape that covers part of the outer peripheral surface of the antenna 7 when the antenna 7 is attached.

The cover support portion 5b is formed continuously from the two ends of the antenna housing portion 5a, which has a U-shaped cross section, and is a flange portion formed to protrude outward from the ends of the antenna housing portion 5a. In other words, the cover support portion 5b has an outward flange shape.

Here, for example, the side portion 3h of the flange 3 may have a second support portion that protrudes inside the housing opening 2b so as to engage the peripheral portion of the antenna cover 5. The second support portion is part of the above-mentioned protrusion, and protrudes further inside the housing opening 2b than the above-mentioned first support portion (has a longer protrusion length). When the antenna cover 5 is supported inside the housing opening 2b, the cover support portion 5b is supported by the side portion 3h of the flange 3 (the above-mentioned second support portion).

The cover opening 5c is an opening that is surrounded by the antenna housing section 5a. The cover opening 5c is provided so that it opens onto the vacuum cover 4 side.

The housing 2 also has an antenna housing space AK surrounded by at least the vacuum cover 4 and the antenna cover 5. This antenna housing space AK is an example of an enclosed space, and houses an antenna 7 for generating inductively coupled plasma. However, the size of this antenna housing space AK is set to a size that is not sufficient to sustain plasma generated by the antenna 7, and therefore it functions as a non-plasma generation area.

<Antenna 7>
1, the antenna 7 has a long straight portion and bent portions that are bent upward at both ends of the straight portion. The antenna 7 is, for example, cylindrical and made of a metal material such as copper. One end and the other end of the antenna 7 are provided in an electrically insulated state to the vacuum cover 4 via antenna insulating portions 41a and 41b, respectively, and are airtightly extended to the outside of the housing 2.

One end of the antenna 7 receives high-frequency power supplied from the high-frequency power source 8. The other end of the antenna 7 is electrically grounded. Hereinafter, the one end and the other end of the antenna 7 are referred to as the power supply side end 7a (high-frequency power source side end) and the ground side end 7b, respectively. A matching circuit 9 and a power supply side variable capacitor VCa (power supply side impedance adjustment section) are connected to the power supply side end 7a of the antenna 7. A ground side variable capacitor VCb (ground side impedance adjustment section) is connected to the ground side end 7b of the antenna 7. Hereinafter, the power supply side variable capacitor VCa and the ground side variable capacitor VCb are collectively referred to as the variable capacitor VC. Note that the power supply side variable capacitor VCa does not have to be connected to one of the multiple antennas 71 to 73. That is, in this embodiment, it is sufficient that the power supply side variable capacitor VCa is connected to at least two of the three antennas 71 to 73. Additionally, the variable capacitor VC is an example of an impedance adjustment unit whose impedance is variable, and is not limited to this.

The high frequency power supply 8 supplies high frequency power of, for example, 13.56 MHz to the power supply side end 7a via the matching circuit 9 and the power supply side variable capacitor VCa. The monitoring device 10 also controls the supply of high frequency power to the antenna 7 efficiently by changing the capacitance of the ground side variable capacitor VCb.

<Light receiving unit PD>
1, the light receiving unit PD is disposed on the side surface of the housing body 2a at a height position where the light emission intensity of the plasma generation region HA can be detected. The light receiving unit PD includes an imaging element such as a charge coupled device (CCD) or a complementary metal oxide semiconductor (CMOS). The light receiving unit PD detects the light emission intensity of the plasma generation region HA by receiving light emitted from the plasma in the plasma generation region HA through a viewport (through hole) formed on the side surface of the housing body 2a with the imaging element.

As shown in FIG. 3, the light receiving unit PD has a plurality of light receiving units arranged along the left-right direction (the direction in which the plurality of antennas 71-73 extend). In this embodiment, the plurality of light receiving units are two light receiving units, namely, the first light receiving unit PD1 and the second light receiving unit PD2. The first light receiving unit PD1 and the second light receiving unit PD2 are provided on the front and rear side surfaces of the housing body 2a. For example, the first light receiving unit PD1 and the second light receiving unit PD2 may be provided at positions corresponding to the left and right ends of the plurality of antennas 71-73 on the front and rear side surfaces of the housing body 2a. In this case, the first light receiving unit PD1 and the second light receiving unit PD2 each detect the emission intensity of the plasma generation area HA including positions corresponding to the left and right ends of the plurality of antennas 71-73 when viewed from above. In addition, the first light receiving unit PD1 and the second light receiving unit PD2 may be provided on the front and rear side surfaces of the housing body 2a so as to be equidistant from the center positions in the left-right direction of the plurality of antennas 71-73.

The light receiving unit PD may also include multiple light receiving units corresponding to the multiple antennas arranged in the front-rear direction (the direction in which the multiple antennas 71-73 are arranged). In this embodiment, the multiple light receiving units are three light receiving units corresponding to the multiple antennas 71-73, respectively, namely the third light receiving unit PD3, the fourth light receiving unit PD4, and the fifth light receiving unit PD5. The third light receiving unit PD3, the fourth light receiving unit PD4, and the fifth light receiving unit PD5 are provided on the left and right side surfaces of the housing main body 2a. For example, the third light receiving unit PD3, the fourth light receiving unit PD4, and the fifth light receiving unit PD5 may be provided at positions corresponding to extensions of the first antenna 71, the second antenna 72, and the third antenna 73 on the left and right side surfaces of the housing main body 2a, respectively. In this case, the third light receiving portion PD3, the fourth light receiving portion PD4, and the fifth light receiving portion PD5 each detect the emission intensity of the plasma generation region HA, which includes positions along the first antenna 71, the second antenna 72, and the third antenna 73 when viewed from above.

With the above configuration, the light receiving unit PD can detect the in-plane distribution of plasma in the plasma generation area HA.

In particular, by providing the first light receiving unit PD1 and the second light receiving unit PD2, the light receiving unit PD can detect the distribution of plasma in the left-right direction in which the multiple antennas 71-73 each extend (hereinafter referred to as the plasma left-right distribution). As described below, the plasma left-right distribution can be controlled by adjusting the impedance of the ground side impedance adjustment unit. In other words, the light receiving unit PD can detect the plasma left-right distribution as information for controlling the plasma in-plane distribution. Therefore, the plasma processing apparatus can adequately check the plasma state in the processing chamber with a simple configuration in which multiple light receiving units are provided along the left-right direction.

Furthermore, by providing the third light receiving unit PD3, the fourth light receiving unit PD4, and the fifth light receiving unit PD5, the light receiving unit PD can detect the distribution of plasma in the front-to-back direction in which the multiple antennas 71-73 are lined up (hereinafter referred to as the plasma front-to-back distribution). As described below, the plasma front-to-back distribution can be controlled by adjusting the impedance of the power supply side impedance adjustment unit. In other words, the light receiving unit PD can detect the plasma front-to-back distribution as information for controlling the plasma in-plane distribution. Therefore, the plasma processing apparatus can adequately check the plasma state in the processing chamber with a simple configuration in which multiple light receiving units are provided along the front-to-back direction.

In this embodiment, an example is shown in which the light receiving unit PD includes the first light receiving unit PD1 to the fifth light receiving unit PD5, but the configuration of the light receiving unit PD is not limited to this. For example, the light receiving unit PD may only include multiple light receiving units arranged along the left-right direction. Also, the light receiving unit PD may only include multiple light receiving units arranged along the front-rear direction. Also, in this embodiment, the number of multiple light receiving units arranged along the left-right direction is two, but this is not limited to this. Also, in this embodiment, the number of multiple light receiving units arranged along the front-rear direction is three, depending on the number of antennas 7, but this is not limited to this.

<Monitoring device 10>
Fig. 4 is a block diagram showing the main configuration of the monitoring device 10. As shown in Fig. 4, the monitoring device 10 includes an acquisition unit 11, a storage unit 12, and a control unit 13. The control unit 13 includes a calculation unit 131, a determination unit 132, and an adjustment control unit 133.

The acquisition unit 11 acquires spectral data (spectroscopic data) of the light received by the light receiving unit PD, including the emission spectrum of the plasma being monitored. The acquisition unit 11 outputs the acquired spectral data to the calculation unit 131 of the control unit 13. The storage unit 12 stores various data used by the monitoring device 10.

The calculation unit 131 calculates the peak value of the wavelength spectrum in a specified wavelength band (i.e., the emission spectrum of the plasma being monitored) from the spectral data, or the integral value near the peak, as the emission intensity of the plasma. Here, the emission intensities of the plasma being monitored calculated by the calculation unit 131 based on the spectral data acquired from the first light receiving unit PD1 to the fifth light receiving unit PD5 are referred to as the first emission intensity I1 to the fifth emission intensity I5 detected by the first light receiving unit PD1 to the fifth light receiving unit PD5, respectively.

When the plasma processing apparatus 1 performs the above-mentioned plasma processing, the emission spectrum of the plasma to be monitored becomes a wavelength spectrum corresponding to the material of the above-mentioned plasma processing. For example, when forming an amorphous silicon film on the substrate W, the calculation unit 131 calculates a peak value near a wavelength of 252 nm corresponding to silicon in a plasma state, or an integral value near the peak.

When the plasma processing apparatus 1 performs the above cleaning process, the emission spectrum of the plasma to be monitored becomes a wavelength spectrum corresponding to the gas resulting from the material adhering to the processing chamber. For example, when silicon is adhering to the wall surface of the processing chamber, nitrogen trifluoride is supplied to the processing chamber. The nitrogen trifluoride supplied to the processing chamber becomes a plasma state due to the induced electric field from the antenna 7, and the nitrogen trifluoride in the plasma state reacts with the silicon adhering to the wall surface. As a result, silicon fluoride gas in a plasma state is generated as the gas resulting from the material adhering to the processing chamber. The calculation unit 131 calculates a peak value near a wavelength of 441 nm corresponding to silicon fluoride in a plasma state, or an integral value near the peak.

The determination unit 132 determines whether the plasma in-plane distribution is appropriate or not based on the first emission intensity I1 to the fifth emission intensity I5 detected by the first light receiving unit PD1 to the fifth light receiving unit PD5. When the plasma processing device 1 performs the above-mentioned plasma processing, the determination unit 132 determines whether the plasma in-plane distribution (generated plasma density) is uniform or not. When the plasma processing device 1 performs the above-mentioned cleaning processing, the determination unit 132 determines the light receiving unit PD that detected a higher plasma emission intensity. The specific determination method used by the determination unit 132 will be described later with reference to Figures 5 to 10.

The adjustment control unit 133 controls the capacitance of the variable capacitor VC based on the judgment result of the judgment unit 132. Specifically, the adjustment control unit 133 controls the capacitance of the ground side variable capacitor VCb (the impedance of the ground side impedance adjustment unit) based on the light emission intensity detected by each of the multiple light receiving units arranged along the left-right direction. In this embodiment, the adjustment control unit 133 controls the capacitance of the ground side variable capacitor VCb based on the first light emission intensity I1 detected by the first light receiving unit PD1 and the second light emission intensity I2 detected by the second light receiving unit PD2. Here, it is known that by adjusting the capacitance of the ground side variable capacitor VCb, the distribution in the length direction (left-right direction) of the high-frequency current flowing through the antenna 7 can be controlled. Therefore, the plasma processing device 1 can control at least the left-right distribution of plasma by changing the capacitance of the ground side variable capacitor VCb.

The adjustment control unit 133 also controls the capacitance of the power supply side variable capacitor VCa (the impedance of the power supply side impedance adjustment unit) based on the emission intensity detected by each of the multiple light receiving units arranged along the front-rear direction. In this embodiment, the adjustment control unit 133 controls the capacitance of the power supply side variable capacitor VCa based on the third emission intensity I3 detected by the third light receiving unit PD3, the fourth emission intensity I4 detected by the fourth light receiving unit PD4, and the fifth emission intensity I5 detected by the fifth light receiving unit PD5. By adjusting the capacitance of the power supply side variable capacitor VCa connected to at least one antenna 7 (i.e., in this embodiment, at least two antennas out of the three antennas 71 to 73), the high frequency current flowing through each antenna 7 can be relatively controlled. The actual multiple antennas 7 may have individual differences. Therefore, even if there is a difference in the plasma density generated when the same magnitude of high frequency current is passed through each antenna 7, the plasma processing device 1 can control the plasma front-rear distribution by adjusting the capacitance of the power supply side variable capacitor VCa. In this embodiment, we will explain a case where the capacitance of the power supply side variable capacitor VCa connected to the three antennas 71 to 73 is controlled based on the third light emission intensity I3 to the fifth light emission intensity I5 detected by the third light receiving unit PD3 to the fifth light receiving unit PD5.

When the plasma processing apparatus 1 performs the above-mentioned plasma processing, the adjustment control unit 133 may control the plasma processing apparatus 1 so as to reduce the variation in plasma density in the plasma generation region. A specific control method in this case will be described later with reference to Figures 5 to 10.

Furthermore, when the plasma processing device 1 performs the above-mentioned cleaning process, the adjustment control unit 133 may control the plasma density to be higher in the plasma generation region corresponding to the light receiving unit PD that detected the higher plasma emission intensity. For example, the emission intensity detected by a light receiving unit PDa among the multiple light receiving units PD1 to PD5 is higher than the emission intensity detected by another light receiving unit PDb among the multiple light receiving units PD1 to PD5. In this case, the adjustment control unit 133 controls the variable capacitor VC to increase the plasma density generated in the plasma generation region corresponding to a certain light receiving unit PDa, so that the plasma density becomes higher than the plasma density generated in the plasma generation region corresponding to the other light receiving unit PDb.

Furthermore, when the plasma processing device 1 performs the above-mentioned cleaning process, the adjustment control unit 133 may control the plasma density generated in the plasma generation region corresponding to the light receiving unit PD that detected the lower plasma emission intensity to be lower. For example, the emission intensity detected by a light receiving unit PDa among the multiple light receiving units PD1 to PD5 is lower than the emission intensity detected by another light receiving unit PDb among the multiple light receiving units PD1 to PD5. In this case, the adjustment control unit 133 controls the variable capacitor VC to reduce the plasma density generated in the plasma generation region corresponding to a certain light receiving unit PDa, so that the plasma density becomes lower than the plasma density generated in the plasma generation region corresponding to the other light receiving unit PDb.

The above configuration allows the distribution of generated plasma to be controlled based on the distribution of adhesion in the processing chamber. Specifically, the plasma density can be increased in areas of the processing chamber where adhesion is high and high-intensity plasma is emitted. Similarly, the plasma density can be decreased in areas of the processing chamber where adhesion is low and low-intensity plasma is emitted. Therefore, the plasma processing apparatus 1 can efficiently perform cleaning processing. In addition, damage caused by plasma to the inner walls of the processing chamber after cleaning has been completed can be suppressed.

Note that among the components of the monitoring device 10 shown in FIG. 4, the control unit 13 is not an essential element. The monitoring device 10 only needs to have the function of at least monitoring the plasma generated inside the housing 2 (i.e., acquiring the spectrum data detected by the light receiving unit PD). In this case, for example, the user may adjust the impedance of the impedance adjustment unit based on the spectrum data acquired by the monitoring device 10.

In addition, if the emission spectrum of the plasma being monitored is dominant over the spectral data of the light detected by the light receiving unit PD, the acquisition unit 11 does not need to acquire spectral data obtained by dispersing the light emitted from the plasma. In this case, the acquisition unit 11 acquires the emission intensity of the light detected by the light receiving unit PD as the emission intensity of the plasma.

<Operation Example of Plasma Processing Apparatus 1>
An example of an operation of the plasma processing apparatus 1 of the present embodiment 1 will be specifically described below with reference to Figures 5 and 6. Figure 5 is a diagram showing a schematic diagram of the positional relationship between the light receiving unit PD and the antenna circuit of the plasma processing apparatus 1. Various operation examples performed by the monitoring device 10 in the plasma processing apparatus 1 as shown in Figure 5 will be described below with reference to Figures 6 to 8. Note that the following description will be given of the case where the plasma processing apparatus 1 performs the above-mentioned plasma processing.

As shown in FIG. 5, the kth power supply side variable capacitor VCak and the kth ground side variable capacitor VCbk are connected to the power supply side end 7a and the ground side end 7b of the kth antenna, respectively (k=1, 2, 3). The first light receiving unit PD1 and the second light receiving unit PD2 are provided at positions corresponding to the left and right ends of the multiple antennas 71 to 73, respectively. The third light receiving unit PD3, the fourth light receiving unit PD4, and the fifth light receiving unit PD5 are provided at positions corresponding to the extensions of the first antenna 71, the second antenna 72, and the third antenna 73, respectively.

When plasma processing begins, the plasma processing apparatus 1 applies a high-frequency voltage from the high-frequency power supply 8 to the antenna 7 and passes a high-frequency current through the antenna 7. This generates an induced electric field in the processing chamber, generating an inductively coupled plasma. The monitoring device 10 monitors the first emission intensity I1 to the fifth emission intensity I5 of the plasma detected by the multiple light receiving units PD1 to PD5, respectively. The monitoring device 10 controls the impedance of the ground side impedance adjustment unit (the capacitance of the ground side variable capacitor VCb) based on the first emission intensity I1 and the second emission intensity I2. The monitoring device 10 also controls the high-frequency power supplied to the first antenna 71 to the third antenna 73, respectively, based on the third emission intensity I3 to the fifth emission intensity I5. In this embodiment, the monitoring device 10 controls the impedance of the power supply side impedance adjustment unit (the capacitance of the power supply side variable capacitor VCa) to control the high-frequency power.

Fig. 6 is a flowchart showing an example of processing executed by the monitoring device 10. As shown in Fig. 6, in S1, the determination unit 132 determines whether or not the following first condition is satisfied based on the detection result of the light receiving unit PD.
First condition: Max {I3/Ave (I3, I4, I5), I4/Ave (I3, I4, I5), I5/Ave (I3, I4, I5)}>Max {I1/Ave (I1, I2), I2/Ave (I1, I2)}
When the first condition is satisfied (YES in S1), the process proceeds to S2. When the first condition is not satisfied (NO in S1), the process proceeds to S3. Here, "I3/Ave (I3, I4, I5)" in the first condition is a value obtained by normalizing the third emission intensity I3 by the average value of the third emission intensity I3 to the fifth emission intensity I5. Note that the third emission intensity I3 may be normalized by, for example, a reference emission intensity stored in the memory unit 12. The same applies to the other emission intensities.

In S2 (control step), the adjustment control unit 133 controls the power supply side variable capacitor VCa so that Max(I3, I4, I5) decreases. For example, when Max(I3, I4, I5)=I3 (i.e., when the third light emission intensity I3 is the largest among the third light emission intensity I3 to the fifth light emission intensity I5), the adjustment control unit 133 adjusts the capacitance of the first power supply side variable capacitor VCa1.

In S3 (control step), the adjustment control unit 133 controls the ground side variable capacitor VCb so that Max(I1, I2) decreases. For example, when Max(I3, I4, I5)=I3, the adjustment control unit 133 adjusts the capacitance of the first ground side variable capacitor VCb1.

同様に、上記第２条件におけるσ_１，２は、第１発光強度Ｉ１、第２発光強度Ｉ２のばらつきを示す値であり、例えば以下の式で定義される。

After the adjustment control unit 133 controls the variable capacitor VC, in S4, the determination unit 132 determines whether or not the following second condition is satisfied.
Second condition: σ _{3, 4,} 5 < 5% and σ _{1, 2} < 5%
When the second condition is satisfied (YES in S4), the judgment unit 132 considers that the plasma in-plane distribution has become uniform, and the process ends. When the second condition is not satisfied (NO in S4), the process returns to S1. That is, the monitoring device 10 controls the variable capacitor VC until the second condition is satisfied. Here, σ _{3, 4, 5} in the second condition are values indicating the variations in the third emission intensity I3 to the fifth emission intensity I5, and are defined, for example, by the following formula. Note that the values indicating the variations in the third emission intensity I3 to the fifth emission intensity I5 are not limited to these, and may be, for example, the standard deviations of the third emission intensity I3 to the fifth emission intensity I5.

Similarly, σ _1,2 in the second condition is a value indicating the variation of the first emission intensity I1 and the second emission intensity I2, and is defined by, for example, the following formula.

Fig. 7 is a flowchart showing another example of the process executed by the monitoring device 10. As shown in Fig. 7, in S11, the calculation unit 131 stores the emission intensity variations _σ3,4,5 , _σ1,2 , and the maximum emission intensity _IMax , which are calculated based on the detection result of the light receiving unit PD, in the storage unit 12. Note that the maximum emission intensity _IMax is the larger of Max{I3/Ave(I3,I4,I5), I4/Ave(I3,I4,I5), I5/Ave(I3,I4,I5)} and Max{I1/Ave(I1,I2), I2/Ave(I1,I2)}.

In S12 (control step), the adjustment control unit 133 changes the capacitance or reactance of the six variable capacitors VCa1, VCa2, VCa3, VCb1, VCb2, and VCb3 by a predetermined increase/decrease width individually. For example, for the power supply side variable capacitor VCa, the predetermined increase/decrease width is ±σ _3,4,5 /2% of the maximum capacity or reactance at maximum capacity of the power supply side variable capacitor VCa. For example, for the ground side variable capacitor VCb, the predetermined increase/decrease width is ±σ _1,2 /2% of the maximum capacity or reactance at maximum capacity of the ground side variable capacitor VCb. At this time, the adjustment control unit 133 specifies the variable capacitor VC that has the largest decrease in the maximum emission intensity I _Max . The predetermined increase/decrease width may be a fixed value.

For example, when σ _1,2 =10%, the predetermined increase/decrease width is ±σ _1,2 /2% = ±5%. Therefore, if the pre-change capacitances of VCb1, VCb2, and VCb3 are 500 pF, 600 pF, and 700 pF, respectively, the adjustment control unit 133 changes the capacitance value of VCb1 to 475 pF and 525 pF, the capacitance value of VCb2 to 570 pF and 630 pF, and the capacitance value of VCb3 to 665 pF and 735 pF. Let us assume that the amount of decrease in I _Max was the largest when the capacitance value of VCb2 was changed to 570 pF (while the capacitance values of the other variable capacitors were maintained) (i.e., the adjustment control unit 133 specified VCb2 in S12). In this case, in S13, the adjustment control unit 133 changes the capacitance value of VCb2 to 570 pF, and maintains the capacitance values of the other variable capacitors.

In S13, the adjustment control unit 133 changes the capacitance or reactance of the identified variable capacitor VC by the above-mentioned increase/decrease amount.

In S14, after changing the capacitance or reactance of the variable capacitor VC, the emission intensity variations σ _{3, 4, 5} and σ _{1, 2} are updated. That is, the calculation unit 131 calculates σ _{3, 4, 5} and σ _{1, 2} based on the detection result of the light receiving unit PD after changing the capacitance or reactance of the variable capacitor VC.

In S15, the determination unit 132 determines whether the second condition is satisfied for the updated σ _{3, 4, 5} and σ _{1, 2.} If the second condition is satisfied (YES in S13), the process ends. If the second condition is not satisfied (NO in S13), the process returns to S11. That is, the monitoring device 10 controls the variable capacitor VC until the second condition is satisfied.

Fig. 8 is a flowchart showing yet another example of the process executed by the monitoring device 10. As shown in Fig. 8, in S21, the determination unit 132 determines whether or not the following third condition is satisfied.
Third condition: σ _{3, 4,} 5 < 5%
When the third condition is satisfied (YES in S21), the process proceeds to S23. When the third condition is not satisfied (NO in S21), the process proceeds to S23 via S22.

In S22 (control step), similar to S2 in FIG. 6, the adjustment control unit 133 controls the power supply side variable capacitor VCa so that Max (I3, I4, I5) decreases.

After the adjustment control unit 133 controls the power supply side variable capacitor VCa, in S23, the determination unit 132 determines whether or not the following fourth condition is satisfied.
Fourth condition: σ _{1, 2} < 5%
When the fourth condition is satisfied (YES in S23), the process proceeds to S25. When the third condition is not satisfied (NO in S23), the process proceeds to S25 via S24.

In S24 (control step), similar to S3 in FIG. 6, the adjustment control unit 133 controls the ground side variable capacitor VCb so that Max(I1, I2) decreases.

After the adjustment control unit 133 controls the ground side variable capacitor VCb, in S25, the judgment unit 132 again judges whether or not the third condition is satisfied. If the third condition is satisfied (YES in S25), the process ends. If the third condition is not satisfied (NO in S25), the process returns to S21. In other words, the monitoring device 10 controls the variable capacitor VC until both the third condition and the fourth condition are satisfied (i.e., until the second condition is satisfied).

As described above, the monitoring device 10 controls the variable capacitor VC until the second condition is satisfied. In this way, the monitoring device 10 can reduce the variation in plasma density within the processing chamber by adjusting the high-frequency current flowing through each of the multiple antennas 71-73 and the longitudinal current distribution in each antenna 7. In other words, the plasma in-plane distribution within the processing chamber can be made closer to a uniform state.

In addition, the monitoring device 10 directly monitors the light emitted from the plasma using the light receiving unit PD. Therefore, the monitoring device 10 can accurately monitor the plasma state in the processing chamber.

In addition, in this embodiment, even if the number of antennas 7 is increased, there is no need to increase the number of light receiving units PD that detect the left and right distribution of plasma. Therefore, in this embodiment, it is possible to suppress an increase in the required number of light receiving units PD (detection units) due to an increase in the number of antennas.

[Embodiment 2]
Other embodiments of the present invention will be described below. For ease of explanation, the same reference numerals are given to members having the same functions as those described in the above embodiment, and the description thereof will not be repeated.

FIG. 9 is a diagram showing a schematic arrangement of the light receiving unit PD and the antenna circuit of a plasma processing apparatus 201 according to embodiment 2. The plasma processing apparatus 201 according to embodiment 2 differs from the plasma processing apparatus 1 according to embodiment 1 in that a plurality of high frequency power sources (first high frequency power source 81, second high frequency power source 82, and third high frequency power source 83) are connected to supply high frequency power to the first antenna 71, second antenna 72, and third antenna 73, respectively. Furthermore, the power supply variable capacitor VCa may not be required in the plasma processing apparatus 201 according to embodiment 2.

The adjustment control unit 133 according to the second embodiment controls the high frequency power supplied by the multiple high frequency power sources based on the light emission intensities detected by the multiple light receiving units arranged along the front-rear direction. In this embodiment, the adjustment control unit 133 controls the high frequency power supplied by the first high frequency power source 81 to the third high frequency power source 83 based on the third light emission intensity I3 to the fifth light emission intensity I5.

FIG. 10 is a flow chart showing an example of a process executed by the monitoring device 10 according to the second embodiment. Below, an example of an operation executed by the monitoring device 10 in the plasma processing device 201 shown in FIG. 9 will be described with reference to FIG. 10. Note that the following description will be given of a case where the plasma processing device 201 performs the above-mentioned plasma processing.

As shown in FIG. 10, in S31, similar to S1 in FIG. 6, the determination unit 132 determines whether or not the first condition is met based on the detection result of the light receiving unit PD. If the first condition is met (YES in S31), the process proceeds to S32. If the first condition is not met (NO in S31), the process proceeds to S33.

In S32 (control step), the adjustment control unit 133 controls the first high frequency power supply 81 to the third high frequency power supply 83 so that Max (I3, I4, I5) is reduced. For example, when Max (I3, I4, I5)=I3, the adjustment control unit 133 can reduce the high frequency power supplied by the first high frequency power supply 81.

In S33 (control step), similar to S3 in FIG. 6, the adjustment control unit 133 controls the ground side variable capacitor VCb so that Max(I1, I2) decreases.

After the adjustment control unit 133 controls the first high frequency power supply 81 to the third high frequency power supply 83 or the ground side variable capacitor VCb, in S34 the judgment unit 132 judges whether or not the second condition is satisfied. If the second condition is satisfied (YES in S34), the processing ends. If the second condition is not satisfied (NO in S34), the processing returns to S1. In other words, the monitoring device 10 controls the first high frequency power supply 81 to the third high frequency power supply 83 or the ground side variable capacitor VCb until the second condition is satisfied.

With the above configuration, the plasma processing device 201 of embodiment 2 achieves the same effects as that of embodiment 1.

[Software implementation example]
The functions of the monitoring device 10 (hereinafter referred to as the "device") can be realized by a program for causing a computer to function as the device, and a program for causing a computer to function as each control block of the device (particularly each part included in the acquisition unit 11 and the control unit 13).

In this case, the device includes a computer having at least one control device (e.g., a processor) and at least one storage device (e.g., a memory) as hardware for executing the program. The functions described in each of the above embodiments are realized by executing the program using this control device and storage device.

The above program may be recorded on one or more non-transitory computer-readable recording media. The recording media may or may not be included in the device. In the latter case, the above program may be supplied to the device via any wired or wireless transmission medium.

Furthermore, some or all of the functions of each of the above control blocks can be realized by a logic circuit. For example, an integrated circuit in which a logic circuit that functions as each of the above control blocks is formed is also included in the scope of the present invention. In addition, it is also possible to realize the functions of each of the above control blocks by, for example, a quantum computer.

Furthermore, each process described in each of the above embodiments may be executed by AI (Artificial Intelligence). In this case, the AI may run on the control device, or may run on another device (such as an edge computer or a cloud server).

(summary)
In order to solve the above problems, a plasma processing apparatus according to aspect 1 of the present invention comprises at least one antenna for generating plasma in a vacuum vessel and a plurality of light receiving units for detecting the light emission intensity of a plasma generation region, the plurality of light receiving units comprising a first light receiving unit and a second light receiving unit arranged along a first direction in which the at least one antenna extends.

The plasma processing apparatus according to aspect 2 of the present invention may further include, in the above aspect 1, a ground-side impedance adjustment unit having a variable impedance connected to the ground-side end of the at least one antenna, and a control unit that controls the impedance of the ground-side impedance adjustment unit based on the first emission intensity detected by the first light receiving unit and the second emission intensity detected by the second light receiving unit.

In the plasma processing apparatus according to aspect 3 of the present invention, in the above aspect 1 or 2, the at least one antenna may include a first antenna and a second antenna, and the multiple light receiving units may further include a third light receiving unit and a fourth light receiving unit corresponding to the first antenna and the second antenna, respectively, arranged along a second direction in which the first antenna and the second antenna are aligned.

The plasma processing apparatus according to aspect 4 of the present invention may further include, in the above aspect 3, a high-frequency power supply that supplies high-frequency power to the first antenna and the second antenna, a plurality of ground-side impedance adjustment units that are connected to the ground-side ends of the first antenna and the second antenna, respectively, and a power supply-side impedance adjustment unit that is connected to the high-frequency power supply-side end of the first antenna or the second antenna, and a control unit that (i) controls the impedance of the plurality of ground-side impedance adjustment units based on the first emission intensity detected by the first light receiving unit and the second emission intensity detected by the second light receiving unit, and (ii) controls the impedance of the power supply-side impedance adjustment units based on the third emission intensity detected by the third light receiving unit and the fourth emission intensity detected by the fourth light receiving unit.

The plasma processing apparatus according to aspect 5 of the present invention may further include, in the above aspect 3, a first high frequency power supply and a second high frequency power supply that supply high frequency power to the first antenna and the second antenna, respectively, a plurality of ground side impedance adjustment units with variable impedances that are connected to the ground side ends of the first antenna and the second antenna, respectively, and a control unit that (i) controls the impedance of the plurality of ground side impedance adjustment units based on the first emission intensity detected by the first light receiving unit and the second emission intensity detected by the second light receiving unit, and (ii) controls the high frequency power supplied by the first high frequency power supply or the second high frequency power supply based on the third emission intensity detected by the third light receiving unit and the fourth emission intensity detected by the fourth light receiving unit.

In the plasma processing apparatus according to aspect 6 of the present invention, in any one of aspects 2, 4, and 5 above, the multiple light receiving parts detect the light emission intensity of the gas resulting from a substance adhering to the vacuum vessel as the light emission intensity of the plasma generation region, and the control part may control the plasma density generated in the plasma generation region corresponding to the certain light receiving part to be higher than the plasma density generated in the plasma generation region corresponding to the other light receiving part when the light emission intensity detected by one of the multiple light receiving parts is higher than the light emission intensity detected by another of the multiple light receiving parts.

In order to solve the above problem, the plasma processing apparatus according to aspect 7 of the present invention comprises a first antenna and a second antenna for generating plasma in a vacuum chamber, and a plurality of light receiving sections for detecting the light emission intensity of the plasma generation region, the plurality of light receiving sections comprising a third light receiving section and a fourth light receiving section corresponding to the first antenna and the second antenna, respectively, arranged along a second direction in which the first antenna and the second antenna are aligned.

In order to solve the above problem, the control method for a plasma processing apparatus according to aspect 8 of the present invention includes at least one antenna that generates plasma in a vacuum chamber, a plurality of light receiving units that detect the light emission intensity of a plasma generation region, and a ground side impedance adjustment unit with variable impedance connected to the ground side end of the antenna, the plurality of light receiving units including a first light receiving unit and a second light receiving unit arranged along a first direction in which the antenna extends, and includes a first detection step of detecting a first light emission intensity of the plasma generation region corresponding to the first light receiving unit by the first light receiving unit, a second detection step of detecting a second light emission intensity of the plasma generation region corresponding to the second light receiving unit by the second light receiving unit, and a control step of controlling the impedance of the ground side impedance adjustment unit based on the first light emission intensity and the second light emission intensity.

In order to solve the above problem, the control method for a plasma processing apparatus according to aspect 9 of the present invention is a method for controlling a plasma processing apparatus comprising a first antenna and a second antenna for generating plasma in a vacuum vessel, and a plurality of light receiving units for detecting the light emission intensity of a plasma generation region, the plurality of light receiving units comprising a third light receiving unit and a fourth light receiving unit corresponding to the first antenna and the second antenna, respectively, arranged along a second direction in which the first antenna and the second antenna are aligned, the method comprising a third detection step of detecting a third light emission intensity of the plasma generation region corresponding to the third light receiving unit by the third light receiving unit, a fourth detection step of detecting a fourth light emission intensity of the plasma generation region corresponding to the fourth light receiving unit by the fourth light receiving unit, and a control step of controlling the high frequency power supplied to the first antenna and the second antenna, respectively, based on the third light emission intensity and the fourth light emission intensity.

The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope of the claims. The technical scope of the present invention also includes embodiments obtained by appropriately combining the technical means disclosed in the different embodiments.

1, 201 Plasma processing device 7 Antenna 7a Power supply side end (high frequency power supply side end)
7b Ground side end portion 8 High frequency power source 10 Monitoring device 13 Control unit 71 First antenna 72 Second antenna 81 First high frequency power source 82 Second high frequency power source PD Light receiving unit PD1 First light receiving unit PD2 Second light receiving unit PD3 Third light receiving unit PD4 Fourth light receiving unit VCa Power supply side variable capacitor (power supply side impedance adjustment unit)
VCb: Variable capacitor on the ground side (impedance adjustment part on the ground side)

Claims (9)

at least one antenna for generating a plasma within the vacuum vessel;
a plurality of light receiving units for detecting the emission intensity of the plasma generation region;
The plasma processing apparatus, wherein the plurality of light receiving sections include a first light receiving section and a second light receiving section arranged along a first direction in which the at least one antenna extends. a ground-side impedance adjustment unit having a variable impedance, the ground-side impedance adjustment unit being connected to a ground-side end of the at least one antenna;
2. The plasma processing apparatus according to claim 1, further comprising: a control unit that controls an impedance of the ground side impedance adjustment unit based on a first emission intensity detected by the first light receiving unit and a second emission intensity detected by the second light receiving unit. the at least one antenna comprises a first antenna and a second antenna;
2. The plasma processing apparatus of claim 1, wherein the plurality of light receiving sections further include a third light receiving section and a fourth light receiving section corresponding to the first antenna and the second antenna, respectively, arranged along a second direction in which the first antenna and the second antenna are aligned. a high frequency power source for supplying high frequency power to the first antenna and the second antenna;
a plurality of ground-side impedance adjustment units each having a variable impedance and each connected to a ground-side end of the first antenna and the second antenna;
a power supply side impedance adjustment unit having a variable impedance connected to a high frequency power supply side end of the first antenna or the second antenna;
4. The plasma processing apparatus of claim 3, further comprising: (i) a control unit that controls impedances of the plurality of ground side impedance adjustment units based on a first emission intensity detected by the first light receiving unit and a second emission intensity detected by the second light receiving unit; and (ii) a control unit that controls impedances of the power supply side impedance adjustment units based on a third emission intensity detected by the third light receiving unit and a fourth emission intensity detected by the fourth light receiving unit. a first high frequency power supply and a second high frequency power supply which supply high frequency power to the first antenna and the second antenna, respectively;
a plurality of ground-side impedance adjustment units each having a variable impedance and each connected to a ground-side end of the first antenna and the second antenna;
4. The plasma processing apparatus of claim 3, further comprising: (i) a control unit that controls impedance of the plurality of ground side impedance adjustment units based on a first emission intensity detected by the first light receiving unit and a second emission intensity detected by the second light receiving unit; and (ii) a control unit that controls high frequency power supplied by the first high frequency power supply or the second high frequency power supply based on a third emission intensity detected by the third light receiving unit and a fourth emission intensity detected by the fourth light receiving unit. the plurality of light receiving units detect, as the emission intensity of the plasma generation region, an emission intensity of a gas resulting from a substance adhering to the vacuum vessel;
6. The plasma processing apparatus according to claim 2, wherein when the emission intensity detected by one of the plurality of light receiving parts is higher than the emission intensity detected by another of the plurality of light receiving parts, the control unit controls the plasma density generated in the plasma generation region corresponding to the one light receiving part to be higher than the plasma density generated in the plasma generation region corresponding to the other light receiving part. a first antenna and a second antenna for generating plasma within a vacuum vessel;
a plurality of light receiving units for detecting the emission intensity of the plasma generation region;
The plasma processing apparatus, wherein the plurality of light receiving sections include a third light receiving section and a fourth light receiving section corresponding to the first antenna and the second antenna, respectively, arranged along a second direction in which the first antenna and the second antenna are aligned. at least one antenna for generating a plasma within the vacuum vessel;
A plurality of light receiving units for detecting the emission intensity of the plasma generation region;
A ground side impedance adjustment unit having a variable impedance connected to a ground side end of the antenna,
The plurality of light receiving units include a first light receiving unit and a second light receiving unit arranged along a first direction in which the antenna extends,
a first detection step of detecting a first emission intensity of a plasma generation region corresponding to the first light receiving unit by the first light receiving unit;
a second detection step of detecting a second emission intensity of a plasma generation region corresponding to the second light receiving unit by the second light receiving unit;
and a control step of controlling the impedance of the ground side impedance adjustment unit based on the first emission intensity and the second emission intensity. a first antenna and a second antenna for generating plasma within a vacuum vessel;
a plurality of light receiving units for detecting the emission intensity of the plasma generation region;
a control method for a plasma processing apparatus, the plurality of light receiving units including a third light receiving unit and a fourth light receiving unit corresponding to the first antenna and the second antenna, respectively, arranged along a second direction in which the first antenna and the second antenna are arranged, the method comprising:
a third detection step of detecting a third emission intensity of a plasma generation region corresponding to the third light receiving unit by the third light receiving unit;
a fourth detection step of detecting a fourth emission intensity of a plasma generation region corresponding to the fourth light receiving unit by the fourth light receiving unit;
and a control step of controlling high frequency power supplied to the first antenna and the second antenna based on the third emission intensity and the fourth emission intensity.

Images