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WO2024070267A1 - Dispositif de traitement de substrat et procédé de traitement de substrat - Google Patents

Dispositif de traitement de substrat et procédé de traitement de substrat Download PDF

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Publication number
WO2024070267A1
WO2024070267A1 PCT/JP2023/029148 JP2023029148W WO2024070267A1 WO 2024070267 A1 WO2024070267 A1 WO 2024070267A1 JP 2023029148 W JP2023029148 W JP 2023029148W WO 2024070267 A1 WO2024070267 A1 WO 2024070267A1
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Prior art keywords
cavity
substrate
base
substrate support
pressure
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PCT/JP2023/029148
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English (en)
Japanese (ja)
Inventor
真矢 石川
力 永井
恭平 山本
塁文 津田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H10P50/242—
    • H10P72/70—

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  • Various aspects and embodiments of the present disclosure relate to substrate processing apparatus and substrate processing methods.
  • Patent Document 1 discloses a substrate processing apparatus that uses multiple heaters embedded in the stage on which the substrate is placed to control the temperature of a substrate placed on the stage.
  • the power supplied to each heater is controlled independently, allowing individual temperature control for each area of the stage in which the heater is provided.
  • Pulsed power is supplied to the heaters, and the pulse density is controlled so that the temperature of the area in which the heater is provided becomes a predetermined temperature.
  • the present disclosure provides a substrate processing apparatus and a substrate processing method that can improve the uniformity of the temperature distribution on the substrate.
  • a substrate processing apparatus includes a chamber and a substrate support section disposed within the chamber and supporting a substrate.
  • the substrate support section includes a first base having a substrate support surface that supports a substrate, and a second base disposed below the first base.
  • the first base includes a heater, a first thermal conductive section, and a second thermal conductive section.
  • the heater is embedded within the first base.
  • the first thermal conductive section is provided within the first base farther from the substrate support surface than the heater, at a position corresponding to a first region including a central region on the substrate support surface.
  • the second thermal conductive section is provided within the first base farther from the substrate support surface than the heater, at a position corresponding to a second region around the first region, and has a higher thermal conductivity than the first thermal conductive section.
  • the second base is cooled.
  • Various aspects and embodiments of the present disclosure can improve the uniformity of the temperature distribution of the substrate.
  • FIG. 1 is a schematic cross-sectional view showing an example of a plasma processing apparatus.
  • FIG. 2 is an enlarged cross-sectional view showing an example of a detailed structure of the substrate support portion in the first embodiment.
  • FIG. 3 is a diagram showing an example of the arrangement of zones.
  • FIG. 4 is a diagram showing an example of the arrangement of the first and second cavities.
  • FIG. 5A is a diagram showing an example of power supplied in a pulsed manner.
  • FIG. 5B is a diagram showing an example of a change in temperature of the heater.
  • FIG. 6A is a diagram showing an example of power supplied in a pulsed manner.
  • FIG. 6B is a diagram showing an example of a change in temperature of the heater.
  • FIG. 7 is a flow chart showing an example of a substrate processing method.
  • FIG. 1 is a schematic cross-sectional view showing an example of a plasma processing apparatus.
  • FIG. 2 is an enlarged cross-sectional view showing an example of a detailed structure of the
  • FIG. 8 is an enlarged cross-sectional view showing an example of a detailed structure of a substrate support portion according to the second embodiment.
  • FIG. 9 is an enlarged cross-sectional view showing an example of a detailed structure of a substrate support portion according to the third embodiment.
  • FIG. 10 is an enlarged cross-sectional view showing an example of a detailed structure of a substrate support portion according to the fourth embodiment.
  • FIG. 11 is a diagram showing an example of the arrangement of the first cavities and the second cavities.
  • FIG. 12 is a diagram showing another example of the arrangement of the first cavities.
  • the present disclosure therefore provides technology that can improve the uniformity of the temperature distribution on the substrate.
  • FIG. 1 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus 1.
  • the plasma processing apparatus 1 is a capacitively coupled plasma processing apparatus.
  • the plasma processing apparatus 1 is an example of a substrate processing apparatus.
  • the plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40.
  • the plasma processing apparatus 1 also includes a substrate support unit 11 and a gas introduction unit.
  • the gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10.
  • the gas introduction unit includes a shower head 13.
  • the substrate support unit 11 is disposed in the plasma processing chamber 10.
  • the shower head 13 is disposed above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a part of the ceiling of the plasma processing chamber 10.
  • the plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support unit 11.
  • the plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas into the plasma processing space 10s and at least one gas exhaust port for exhausting gas from the plasma processing space 10s.
  • the plasma processing chamber 10 is grounded.
  • the shower head 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.
  • An opening 10b is formed in the sidewall 10a of the plasma processing chamber 10 for loading and unloading a substrate W into and from the plasma processing chamber 10.
  • the opening 10b is opened and closed by a gate valve G.
  • the substrate support part 11 includes a main body part 111 and a ring assembly 112.
  • the main body part 111 has a substrate support surface 111a, which is a central region for supporting the substrate W, and a ring support surface 111b, which is an annular region for supporting the ring assembly 112.
  • the ring support surface 111b of the main body part 111 surrounds the substrate support surface 111a of the main body part 111 in a plan view.
  • the substrate W is placed on the substrate support surface 111a of the main body part 111, and the ring assembly 112 is placed on the ring support surface 111b of the main body part 111 so as to surround the substrate W on the substrate support surface 111a of the main body part 111.
  • the main body 111 includes a base 1110 and an electrostatic chuck 1111.
  • the base 1110 is an example of a second base, and the electrostatic chuck 1111 is an example of a first base.
  • the base 1110 includes a conductive member.
  • the conductive member of the base 1110 can function as a lower electrode.
  • the electrostatic chuck 1111 is disposed on the base 1110.
  • the electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a.
  • the ceramic member 1111a has a substrate support surface 111a. In one embodiment, the ceramic member 1111a also has a ring support surface 111b.
  • the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member.
  • at least one RF/DC electrode coupled to an RF (Radio Frequency) power source 31 and/or a DC (Direct Current) power source 32 described later may be disposed in the ceramic member 1111a. In this case, the at least one RF/DC electrode functions as a lower electrode.
  • the RF/DC electrode is also called a bias electrode.
  • the conductive member of the base 1110 and the at least one RF/DC electrode may function as multiple lower electrodes.
  • the electrostatic electrode 1111b may function as a lower electrode.
  • the substrate support 11 includes at least one lower electrode.
  • the ring assembly 112 includes one or more annular members.
  • the one or more annular members may include one or more edge rings and at least one cover ring.
  • the edge rings are formed of a conductive or insulating material
  • the cover rings are formed of an insulating material.
  • the substrate support 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate W to a target temperature.
  • the temperature control module includes a heater 1111c, a heat transfer medium, a flow path 1110a, or a combination thereof.
  • the heater 1111c is supplied with power having a pulsed waveform. By controlling the density of the pulses, the power supplied to the heater 1111c is controlled, and the amount of heat generated by the heater 1111c is controlled.
  • a heat transfer fluid such as brine or gas flows through the flow path 1110a.
  • a refrigerant which is a cooling fluid, flows through the flow path 1110a, and the base 1110 is cooled by the refrigerant.
  • the flow path 1110a is formed in the base 1110, and one or more heaters 1111c are disposed in the ceramic member 1111a of the electrostatic chuck 1111. Details of the substrate support 11 will be described later.
  • the substrate support 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas to the gap between the back surface of the substrate W and the substrate support surface 111a.
  • the shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s.
  • the shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c.
  • the processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c.
  • the shower head 13 also includes at least one upper electrode.
  • the gas introduction unit may include, in addition to the shower head 13, one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.
  • SGIs side gas injectors
  • the gas supply 20 may include at least one gas source 21 and at least one flow controller 22.
  • the gas supply 20 is configured to supply at least one process gas from a respective gas source 21 to the showerhead 13 via a respective flow controller 22.
  • Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller.
  • the gas supply 20 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.
  • the power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit.
  • the RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and/or at least one upper electrode. This causes a plasma to be formed from at least one processing gas supplied to the plasma processing space 10s.
  • the RF power supply 31 can function as at least a part of a plasma generating unit configured to generate plasma from one or more processing gases in the plasma processing chamber 10.
  • a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, and ion components in the formed plasma can be attracted to the substrate W.
  • the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b.
  • the first RF generating unit 31a is coupled to at least one lower electrode and/or at least one upper electrode via at least one impedance matching circuit, and is configured to generate a source RF signal (source RF power) for plasma generation.
  • the frequency of the source RF signal is in the range of 10 MHz to 150 MHz.
  • the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and/or at least one upper electrode.
  • the second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power).
  • the frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal.
  • the frequency of the bias RF signal is a frequency lower than the frequency of the source RF signal.
  • the frequency of the bias RF signal is a frequency in the range of 100 kHz to 60 MHz.
  • the second RF generating unit 31b may be configured to generate multiple bias RF signals having different frequencies.
  • the generated one or more bias RF signals are supplied to at least one lower electrode.
  • at least one of the source RF signal and the bias RF signal may be pulsed.
  • the power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10.
  • the DC power supply 32 includes a first DC generator 32a and a second DC generator 32b.
  • the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal.
  • the generated first bias DC signal is applied to the at least one lower electrode.
  • the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal.
  • the generated second DC signal is applied to the at least one upper electrode.
  • At least one of the first DC signal and the second DC signal may be pulsed.
  • a sequence of voltage pulses is applied to at least one lower electrode and/or at least one upper electrode.
  • the voltage pulses may have a rectangular, trapezoidal, triangular or combination thereof pulse waveform.
  • a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode.
  • the first DC generator 32a and the waveform generator constitute a voltage pulse generator.
  • the second DC generator 32b and the waveform generator constitute a voltage pulse generator
  • the voltage pulse generator is connected to at least one upper electrode.
  • the voltage pulses may have a positive polarity or a negative polarity.
  • the sequence of voltage pulses may also include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses within one period.
  • the first DC generating unit 32a and the second DC generating unit 32b may be provided in addition to the RF power source 31, or the first DC generating unit 32a may be provided in place of the second RF generating unit 31b.
  • the exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10.
  • the exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve.
  • the vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.
  • the control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various steps described in this disclosure.
  • the control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing apparatus 1.
  • the control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3.
  • the control unit 2 is realized, for example, by a computer 2a.
  • the processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary.
  • the acquired program is stored in the storage unit 2a2 and is read from the storage unit 2a2 by the processing unit 2a1 and executed.
  • the medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3.
  • the processing unit 2a1 may be a CPU (Central Processing Unit).
  • the memory unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination of these.
  • the communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).
  • [Configuration of substrate support portion 11] 2 is an enlarged cross-sectional view showing an example of a detailed structure of the substrate support part 11 in the first embodiment.
  • the electrostatic chuck 1111 is fixed to the upper surface of the base 1110 by an adhesive 1110b.
  • the ring assembly 112 is fixed to the ring support surface 111b of the electrostatic chuck 1111 by an adhesive 112a.
  • the ring assembly 112 and the electrostatic chuck 1111 may be fixed by other methods.
  • the electrostatic chuck 1111 includes an electrostatic electrode 1111b and multiple heaters 1111c, as shown in FIG. 2 for example.
  • the substrate support surface 111a of the electrostatic chuck 1111 is divided into multiple zones 1111f, as shown in FIG. 3 for example, and one heater 1111c is embedded in the electrostatic chuck 1111 corresponding to one zone 1111f. Note that multiple heaters 1111c may be embedded in one zone 1111f.
  • the electrostatic chuck 1111 also has a first cavity 1111d and a second cavity 1111e.
  • the first cavity 1111d and the second cavity 1111e are formed inside the electrostatic chuck 1111 farther from the substrate support surface 111a than the heater 1111c.
  • the first cavity 1111d is provided at a position corresponding to a first region 111a1 including a central region on the substrate support surface 111a, as shown in FIG. 4, for example.
  • the second cavity 1111e is provided at a position corresponding to a second region 111a2 around the first region 111a1, as shown in FIG. 4, for example.
  • first cavity 1111d and the second cavity 1111e each include a single cavity, but in other embodiments, the first cavity 1111d and the second cavity 1111e each may include multiple cavities.
  • pressure adjustment valve 53a is connected to first cavity 1111d via piping, and one end of pressure adjustment valve 53b is connected to second cavity 1111e via piping.
  • the other ends of pressure adjustment valve 53a and pressure adjustment valve 53b are connected to gas supply source 50 via valve 52a.
  • the other ends of pressure adjustment valve 53a and pressure adjustment valve 53b are connected to vacuum pump 51 via valve 52b.
  • Pressure adjustment valve 53a and pressure adjustment valve 53b are an example of a pressure control unit.
  • Gas supply source 50 is a source of heat transfer gas.
  • the heat transfer gas is, for example, helium gas.
  • valve 52a open and valve 52b closed
  • the pressure of the heat transfer gas in first cavity 1111d and second cavity 1111e is controlled by pressure adjustment valve 53a and pressure adjustment valve 53b. This makes it possible to control the thermal conductivity in first cavity 1111d and second cavity 1111e, and to control the amount of heat conducted from heater 1111c to base 1110.
  • the pressure of the heat transfer gas supplied into first cavity 1111d and the pressure of the heat transfer gas supplied into second cavity 1111e can be controlled independently.
  • the heat transfer gas supplied into the first cavity 1111d is an example of a first heat conduction part
  • the heat transfer gas supplied into the second cavity 1111e is an example of a second heat conduction part.
  • the fluid supplied into the first cavity 1111d and the second cavity 1111e is a gas, but in another embodiment, the fluid supplied into the first cavity 1111d and the second cavity 1111e may be a liquid.
  • the pressure of the heat transfer gas in the first cavity 1111d is controlled to a first pressure by the pressure regulating valve 53a and the pressure of the heat transfer gas in the second cavity 1111e is controlled to a second pressure by the pressure regulating valve 53a and the pressure regulating valve 53b.
  • the pressure of the heat transfer gas in the first cavity 1111d and the second cavity 1111e is controlled to a third pressure higher than the first pressure and the second pressure by the pressure regulating valve 53a and the pressure regulating valve 53b.
  • the amount of heat conduction from the heater 1111c to the base 1110 is kept low, thereby reducing the power supplied to the heater 1111c.
  • the amount of heat conduction from the heater 1111c to the base 1110 is increased, thereby making it possible to quickly lower the temperature of the substrate W. This allows the substrate W to be removed from the plasma processing chamber 10 more quickly after processing of the substrate W is completed, improving processing throughput.
  • the valve 52a is closed and the valve 52b is opened. This reduces the pressure of the heat transfer gas in the first cavity 1111d and the second cavity 1111e.
  • each zone 1111f becomes smaller, and the heater 1111c disposed inside the electrostatic chuck 1111 corresponding to the zone 1111f also becomes smaller.
  • the heater 1111c becomes smaller, the resistance value of the heater 1111c becomes smaller, and the amount of heat generated by the heater 1111c pulsates in response to the power supplied in pulses. This causes the temperature of the zone 1111f in which the heater 1111c is provided to pulsate.
  • heater 1111c if the amount of heat conduction from heater 1111c to base 1110 is large, it is necessary to supply a large amount of power to heater 1111c in order to maintain the temperature of zone 1111f in which heater 1111c is provided at a predetermined temperature. Therefore, a high-density pulse of power is supplied to heater 1111c, for example, as shown in FIG. 5A. In this case, the amplitude of the temperature pulsation in zone 1111f in which heater 1111c is provided is small, for example, as shown in FIG. 5B.
  • zone 1111f pulsates with a large amplitude, the temperature of that zone 1111f will not stabilize. Furthermore, when feedback control of the power supplied to the corresponding heater 1111c is performed based on the temperature of that zone 1111f, if the temperature change in zone 1111f is large, the temperature change in that zone 1111f may become even greater. This reduces the uniformity of the temperature distribution of the substrate W.
  • the zone 1111f near the edge of the substrate W has fewer paths for heat conduction from the heater 1111c to the base 1110 compared to the zone 1111f near the center of the substrate W. Therefore, the amount of heat conducted from the heater 1111c to the base 1110 is smaller in the zone 1111f near the edge of the substrate W than in the zone 1111f near the center of the substrate W, resulting in greater temperature fluctuations.
  • the gas pressure in the second cavity 1111e formed below the zone 1111f near the edge of the substrate W is set to a pressure higher than the gas pressure in the main body portion 111d formed below the zone 1111f near the center of the substrate W. This makes it possible to increase the amount of heat conduction in the zone 1111f near the edge of the substrate W and reduce the range of temperature fluctuation in the zone 1111f. This makes it possible to improve the uniformity of the temperature distribution of the substrate W.
  • the first cavity 1111d and the second cavity 1111e are disposed between the heater 1111c and the adhesive 1110b.
  • FIG. 7 is a flow chart showing an example of a substrate processing method. The process shown in Fig. 7 is realized by the processing unit 2a1 of the control unit 2 reading a program from the storage unit 2a2, executing the read program, and controlling each part of the plasma processing apparatus 1 via the communication interface 2a3.
  • a substrate W is loaded into the plasma processing chamber 10 (S10).
  • the gate valve G is opened, and the substrate W is loaded into the plasma processing chamber 10 through the opening 10b by a transfer device (not shown), and the substrate W is placed on the substrate support 11. Then, the transfer device is withdrawn from the plasma processing chamber 10, and the gate valve G is closed.
  • Step S11 is an example of process a).
  • valve 52a, pressure adjustment valve 53a, and pressure adjustment valve 53b are opened, valve 52b is closed, and heat transfer gas is supplied into the first cavity 1111d and the second cavity 1111e.
  • the pressure adjustment valve 53a and the pressure adjustment valve 53b control the pressure of the heat transfer gas supplied into the first cavity 1111d to be lower than the pressure of the heat transfer gas supplied into the second cavity 1111e.
  • step S12 the temperature of the coolant supplied to the flow path 1110a of the base 1110 and the power supplied to the heater 1111c provided below each zone 1111f are adjusted so that the temperature of each zone 1111f becomes a predetermined temperature.
  • step S13 the gas in the plasma processing chamber 10 is exhausted by the exhaust system 40, and the processing gas is supplied from the gas supply unit 20 into the plasma processing chamber 10.
  • a source RF signal is supplied from the RF power supply 31 to the conductive member of the substrate support unit 11, the conductive member of the shower head 13, or both, thereby generating plasma from the processing gas in the plasma processing chamber 10.
  • a bias RF signal is supplied from the RF power supply 31 to the conductive member of the substrate support unit 11, the conductive member of the shower head 13, or both. This generates a bias potential on the substrate W, attracts ion components in the plasma into the substrate W, and performs an etching process on the substrate W.
  • Step S14 is an example of process b).
  • the pressure in the first cavity 1111d and the second cavity 1111e is controlled to be higher than the pressure in the first cavity 1111d and the second cavity 1111e while the processing of the substrate W is being performed. This allows the temperature of the substrate W to be reduced quickly.
  • step S15 the gate valve G is opened, and the substrate W is removed from the plasma processing chamber 10 through the opening 10b by a transport device (not shown). Then, the valve 52a is closed and the valve 52b is opened, and the pressure of the heat transfer gas in the first cavity 1111d and the second cavity 1111e is reduced. Then, the substrate processing method shown in this flowchart is completed.
  • the plasma processing apparatus 1 in this embodiment includes a plasma processing chamber 10 and a substrate support portion 11 disposed in the plasma processing chamber 10 and supporting the substrate W.
  • the substrate support portion 11 includes an electrostatic chuck 1111 having a substrate support surface 111a that supports the substrate W, and a base 1110 disposed below the electrostatic chuck 1111.
  • the electrostatic chuck 1111 includes a heater 1111c, a first thermal conductive portion, and a second thermal conductive portion.
  • the heater 1111c is embedded inside the electrostatic chuck 1111.
  • the first thermal conductive portion is provided inside the electrostatic chuck 1111 farther from the substrate support surface 111a than the heater 1111c, at a position corresponding to a first region 111a1 including a central region on the substrate support surface 111a.
  • the second thermally conductive portion is provided inside the electrostatic chuck 1111 farther from the substrate support surface 111a than the heater 1111c, at a position corresponding to the second region 111a2 around the first region 111a1, and has a higher thermal conductivity than the first thermally conductive portion.
  • the base 1110 is cooled. This can improve the uniformity of the temperature distribution of the substrate W.
  • the first thermally conductive portion is a fluid supplied into a first cavity 1111d formed inside the electrostatic chuck 1111 at a position corresponding to the first region 111a1 on the substrate support surface 111a, the fluid being located further from the substrate support surface 111a than the heater 1111c.
  • the second thermally conductive portion is a fluid supplied into a second cavity 1111e formed inside the electrostatic chuck 1111 at a position corresponding to the second region 111a2 on the substrate support surface 111a, the fluid being located further from the substrate support surface 111a than the heater 1111c.
  • the above embodiment further includes pressure adjustment valves 53a and 53b that control the pressure of the fluid supplied into the first cavity 1111d to be lower than the pressure of the fluid supplied into the second cavity 1111e. This makes it easy to adjust the thermal conductivity of the first heat conduction section and the second heat conduction section.
  • the pressure regulating valve 53a and the pressure regulating valve 53b control the pressure in the first cavity 1111d and the second cavity 1111e when the processing of the substrate W is completed in the plasma processing chamber 10 so that it is higher than the pressure in the first cavity 1111d and the second cavity 1111e while the processing of the substrate W is being performed. This allows the temperature of the substrate W after processing to be reduced quickly, and allows the substrate W to be removed from the plasma processing chamber 10 more quickly after the processing of the substrate W is completed.
  • the fluid is helium gas. This makes it easy to adjust the thermal conductivity of the first thermal conductive portion and the second thermal conductive portion.
  • the base 1110 and the electrostatic chuck 1111 are bonded with the adhesive 1110b, but the first cavity 1111d and the second cavity 1111e are disposed between the heater 1111c and the adhesive 1110b within the electrostatic chuck 1111.
  • an electrostatic electrode 1111b is provided inside the electrostatic chuck 1111 to attract the substrate W to the substrate support surface 111a by electrostatic force. This makes it possible to easily hold the substrate W on the substrate support surface 111a.
  • the substrate processing method in the above embodiment is performed in the above plasma processing apparatus 1 and includes steps a) and b).
  • step a) when the substrate W is processed in the plasma processing chamber 10, the pressure of the fluid supplied into the first cavity 1111d is controlled by the pressure regulating valve 53a and the pressure regulating valve 53b to be lower than the pressure of the fluid supplied into the second cavity 1111e.
  • step b) when the substrate W is processed in the plasma processing chamber 10, the pressure in the first cavity 1111d and the second cavity 1111e is controlled by the pressure regulating valve 53a and the pressure regulating valve 53b to be higher than the pressure in the first cavity 1111d and the second cavity 1111e while the substrate W is being processed. This allows the temperature of the substrate W after processing to be quickly reduced, and the substrate W can be more quickly removed from the plasma processing chamber 10 after the substrate W processing is completed.
  • the width of the first cavity 1111d and the width of the second cavity 1111e are substantially the same in the thickness direction of the electrostatic chuck 1111.
  • the width of the first cavity 1111d in the thickness direction of the electrostatic chuck 1111 is wider than the width of the second cavity 1111e, which is different from the first embodiment. The following description will focus on the differences from the first embodiment.
  • FIG. 8 is an enlarged cross-sectional view showing an example of a detailed structure of the substrate support portion 11 in the second embodiment.
  • the width of the first cavity 1111d in the thickness direction of the electrostatic chuck 1111 is wider than the width of the second cavity 1111e, for example, as shown in FIG. 8.
  • a gas supply source 50 is connected to the first cavity 1111d and the second cavity 1111e via a pressure adjustment valve 53c.
  • a vacuum pump 51 is connected to the first cavity 1111d and the second cavity 1111e via a valve 52b.
  • the pressure of the heat transfer gas supplied from the gas supply source 50 to each of the first cavity 1111d and the second cavity 1111e is controlled by the pressure adjustment valve 53c so that the pressures are approximately the same.
  • the width of the first cavity 1111d in the thickness direction of the electrostatic chuck 1111 is wider than the width of the second cavity 1111e. Therefore, even if the pressures of the heat transfer gas in the first cavity 1111d and the second cavity 1111e are approximately the same, the amount of heat transferred to the base 1110 via the second cavity 1111e can be made greater than the amount of heat transferred to the base 1110 via the first cavity 1111d. This eliminates the need to provide pressure adjustment valves 53a and 53b corresponding to the first cavity 1111d and the second cavity 1111e, respectively, thereby simplifying the device.
  • the pressure of the heat transfer gas in the first cavity 1111d and the pressure of the heat transfer gas in the second cavity 1111e may be controlled independently of each other, for example to be different pressures. This makes it possible to finely adjust the amount of heat transferred to the base 1110 via the first cavity 1111d and the amount of heat transferred to the base 1110 via the second cavity 1111e in response to changes over time in the substrate support 11 and changes in processing conditions, etc.
  • the width of the first cavities 1111d in the thickness direction of the electrostatic chuck 1111 is wider than the width of the second cavities 1111e.
  • the width of the first cavities 1111d and the width of the second cavities 1111e in the thickness direction of the electrostatic chuck 1111 are substantially the same.
  • the present embodiment differs from the second embodiment in that the number of the first cavities 1111d in the thickness direction of the electrostatic chuck 1111 is greater than the number of the second cavities 1111e in the thickness direction of the electrostatic chuck 1111. The following description will focus on the differences from the second embodiment.
  • FIG. 9 is an enlarged cross-sectional view showing an example of a detailed structure of the substrate support portion 11 in the third embodiment.
  • the electrostatic chuck 1111 in this embodiment as shown in FIG. 9, a plurality of first cavities 1111d1 and 1111d2, and one second cavity 1111e are formed.
  • the first cavities 1111d1 and 1111d2 are arranged in the thickness direction of the electrostatic chuck 1111.
  • a gas supply source 50 is connected to the first cavity 1111d1, the first cavity 1111d2, and the second cavity 1111e via a pressure adjustment valve 53c.
  • a vacuum pump 51 is connected to the first cavity 1111d1, the first cavity 1111d2, and the second cavity 1111e via a valve 52b.
  • the pressure of the heat transfer gas supplied from the gas supply source 50 to each of the first cavity 1111d1, the first cavity 1111d2, and the second cavity 1111e is controlled by the pressure adjustment valve 53c so that the pressures are approximately the same.
  • the number of first cavities in the thickness direction of the electrostatic chuck 1111 is greater than the number of second cavities in the thickness direction of the electrostatic chuck 1111. Therefore, even if the pressures of the heat transfer gas in the first cavity 1111d1, the first cavity 1111d2, and the second cavity 1111e are approximately the same, the following can be realized. That is, the amount of heat transferred to the base 1110 via the second cavity 1111e can be made greater than the amount of heat transferred to the base 1110 via the first cavity 1111d1 and the first cavity 1111d2.
  • the pressure of the heat transfer gas in the first cavity 1111d1, the pressure of the heat transfer gas in the first cavity 1111d2, and the pressure of the heat transfer gas in the second cavity 1111e may be controlled independently of each other, for example to different pressures. This makes it possible to finely adjust the amount of heat transferred to the base 1110 via the first cavity 1111d1 and the first cavity 1111d2, and the amount of heat transferred to the base 1110 via the second cavity 1111e, depending on the change over time of the substrate support 11 and the change in the processing conditions, etc.
  • first cavities 1111d1 and 1111d2 and one second cavity 1111e are formed in the electrostatic chuck 1111 in the thickness direction of the electrostatic chuck 1111.
  • the disclosed technology is not limited to this, and it is sufficient that a plurality of first cavities 1111d and one or more second cavities 1111e are formed in the electrostatic chuck 1111 in the thickness direction of the electrostatic chuck 1111.
  • the number of first cavities 1111d formed in the electrostatic chuck 1111 may be three or more, and the number of second cavities 1111e formed in the electrostatic chuck 1111 may be two or more.
  • a support may be provided in the cavity to maintain the mechanical strength of the electrostatic chuck 1111.
  • the thermal conductivity of the support is higher than that of the cavity. Therefore, the temperature of the zone 1111f corresponding to the position where the support is provided may decrease. Therefore, in this embodiment, when viewed from the substrate support surface 111a, a further cavity is formed below the region including the position where the support is provided. This makes it possible to suppress the decrease in temperature of the zone 1111f corresponding to the position where the support is provided, and improve the uniformity of the temperature distribution of the substrate W. Below, the differences from the first embodiment will be mainly described.
  • FIG. 10 is an enlarged cross-sectional view showing an example of a detailed structure of the substrate support portion 11 in the fourth embodiment.
  • FIG. 11 is a diagram showing an example of an arrangement of the first cavity 1111d1, the first cavity 1111d2, and the second cavity 1111e.
  • a plurality of pillars 1111g are provided in the first cavity 1111d1, as shown in FIGS. 10 and 11, for example.
  • a first cavity 1111d2 is further formed below the region including the position where the pillars 1111g are provided, as shown in FIGS. 10 and 11, for example.
  • a pressure adjustment valve 53a is connected to the first cavity 1111d1 and the first cavity 1111d2 via piping, and one end of a pressure adjustment valve 53b is connected to the second cavity 1111e via piping.
  • the other ends of the pressure adjustment valves 53a and 53b are connected to the gas supply source 50 via valve 52a.
  • the other ends of the pressure adjustment valves 53a and 53b are connected to the vacuum pump 51 via valve 52b.
  • the pressure of the heat transfer gas supplied into the second cavity 1111e is higher than the pressure of the heat transfer gas supplied into the first cavity 1111d1 and the first cavity 1111d2. This allows the amount of heat transferred from the heater 1111c to the base 1110 via the second cavity 1111e to be greater than the amount of heat transferred from the heater 1111c to the base 1110 via the first cavity 1111d1 and the first cavity 1111d2.
  • the first cavity 1111d2 when viewed from the substrate support surface 111a, the first cavity 1111d2 is further formed below the area including the position where the support pillar 1111g is provided. This makes it possible to suppress a decrease in temperature in the zone 1111f corresponding to the position where the support pillar 1111g is provided, and improves the uniformity of the temperature distribution of the substrate W.
  • the first cavity 1111d2 is formed below the area including the position where the support 1111g is provided, but the disclosed technology is not limited to this. In another embodiment, the first cavity 1111d2 may be formed above the area including the position where the support 1111g is provided.
  • the first cavity 1111d may be formed in a shape that follows the flow path 1110a formed in the base 1110, as shown in FIG. 12, for example.
  • the amount of heat dissipated is large due to the coolant flowing through the flow path 1110a.
  • the amount of heat dissipated is relatively small compared to the vicinity of the flow path 1110a. Therefore, by arranging the first cavity 1111d along the flow path 1110a and in the vicinity of the flow path 1110a, it is possible to suppress bias in the amount of heat dissipated from the electrostatic chuck 1111 throughout the base 1110. This makes it possible to improve the uniformity of the temperature distribution of the substrate W.
  • the pressure of the heat transfer gas in the first cavity 1111d and the second cavity 1111e is almost constant during processing of the substrate W, but the disclosed technology is not limited to this.
  • the pressure of the heat transfer gas in the first cavity 1111d and the second cavity 1111e may be increased when the power supply is stopped.
  • the pressure of the heat transfer gas in the first cavity 1111d and the second cavity 1111e may be decreased when the power supply is stopped. This makes it possible to suppress the range of temperature fluctuation in each zone 1111f, and further reduce the amplitude of the temperature pulsation of the substrate W.
  • the first cavity 1111d and the second cavity 1111e are formed below the substrate support surface 111a inside the electrostatic chuck 1111, but the disclosed technology is not limited to this.
  • a cavity may be further provided inside the electrostatic chuck 1111 below the ring support surface 111b on which the ring assembly 112 is disposed, and the pressure of the heat transfer gas supplied into the cavity may be controlled.
  • the plasma processing apparatus 1 has been described as an example of a substrate processing apparatus, but the disclosed technology is not limited to this. In other words, the disclosed technology can be applied to other substrate processing apparatuses that do not use plasma, so long as the substrate processing apparatus is equipped with a substrate support part 11 that has the function of controlling the temperature of the substrate W.
  • the plasma processing apparatus 1 is described as performing processing using a capacitively coupled plasma (CCP) as an example of a plasma source, but the plasma source is not limited to this.
  • plasma sources other than capacitively coupled plasma include inductively coupled plasma (ICP), microwave excited surface wave plasma (SWP), electron cyclotron resonance plasma (ECP), and helicon wave excited plasma (HWP).
  • the substrate support includes: a first base having a substrate support surface for supporting the substrate; a second base disposed below the first base,
  • the first base includes: a heater embedded inside the first base; a first thermal conductive portion provided inside the first base farther from the substrate support surface than the heater is, at a position corresponding to a first region including a central region of the substrate support surface; a second thermal conductive portion provided inside the first base farther from the substrate support surface than the heater, at a position corresponding to a second region around the first region, the second thermal conductive portion having a thermal conductivity higher than that of the first thermal conductive portion;
  • the second base is a cooled substrate processing apparatus.
  • the first thermal conductive portion is a fluid supplied into a first cavity formed inside the first base at a position corresponding to the first region in the substrate support surface, the first cavity being located further away from the substrate support surface than the heater;
  • the second thermal conductive portion is 2.
  • (Appendix 3) 3.
  • the substrate processing apparatus according to claim 2 wherein a width of the first cavity in a thickness direction of the first base is wider than a width of the second cavity in the thickness direction of the first base.
  • a plurality of first cavities are formed in the first base corresponding to the first region in a thickness direction of the first base, One or more second cavities are formed in the first base corresponding to the second region in a thickness direction of the first base, 4.
  • a support pillar is provided in some of the first cavities among the plurality of first cavities, Another part of the first cavities among the plurality of first cavities 5.
  • (Appendix 6) The substrate processing apparatus according to claim 2, further comprising a pressure control unit that controls a pressure of the fluid supplied into the first cavity to be lower than a pressure of the fluid supplied into the second cavity.
  • the pressure control unit is A substrate processing apparatus as described in Appendix 6, wherein when processing of the substrate is completed in the chamber, the pressure in the first cavity and the second cavity is controlled to be higher than the pressure in the first cavity and the second cavity while processing of the substrate is being performed.
  • Appendix 8) 8.
  • the substrate processing apparatus according to claim 2, wherein the fluid is a gas.
  • (Appendix 9) 9.
  • the substrate processing apparatus wherein the first base and the second base are bonded to each other with an adhesive.
  • Appendix 11 11.
  • an electrode is provided inside the first base for attracting the substrate to the substrate support surface by electrostatic force.
  • the substrate support includes: a first base having a substrate support surface for supporting the substrate; a second base disposed below the first base,
  • the first base includes: a heater embedded inside the first base; a first cavity provided inside the first base farther from the substrate support surface than the heater is, the first cavity being provided at a position corresponding to a first region including a central region of the substrate support surface; a second cavity provided inside the first base at a position farther from the substrate support surface than the heater and corresponding to a second region around the first region; a pressure control unit that controls a pressure of a fluid supplied into the first cavity and a pressure of a fluid supplied into the second cavity;
  • the second base is implemented in a cooled substrate processing apparatus; a) controlling, by the pressure control unit, a pressure of a fluid supplied into the first cavity to be lower than a pressure of a fluid supplied into the second cavity when the substrate is processed in the chamber; b) when processing of the substrate is
  • Substrate 1 Plasma processing apparatus 10 Plasma processing chamber 10a Side wall 10b Opening 10e Gas exhaust port 10s Plasma processing space 11 Substrate support 111 Main body 1110 Base 1110a Flow path 1110b Adhesive 1111 Electrostatic chuck 1111a Ceramic member 1111b Electrostatic electrode 1111c Heater 1111d First cavity 1111e Second cavity 1111f Zone 1111g Support 111a Substrate support surface 111a1 First region 111a2 Second region 111b Ring support surface 112 Ring assembly 112a Adhesive 13 shower head 13a Gas supply port 13b Gas diffusion chamber 13c Gas inlet 20 Gas supply unit 21 Gas source 22 Flow rate controller 30 Power source 31 RF power source 32 DC power source 40 Exhaust system 50 Gas supply source 51 Vacuum pump 52 Valve 53 Pressure adjustment valve 2 Control unit 2a Computer 2a1 Processing unit 2a2 Memory unit 2a3 Communication interface

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  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

L'invention concerne un dispositif de traitement de substrat comprenant : une chambre ; et une partie de support de substrat qui est disposée dans la chambre et qui supporte un substrat. La partie de support de substrat comprend : une première base ayant une surface de support de substrat qui supporte le substrat ; et une deuxième base disposée au-dessous de la première base. La première base comprend un dispositif de chauffage, une première partie de transfert de chaleur et une deuxième partie de transfert de chaleur Le dispositif de chauffage est intégré à l'intérieur de la première base. La première partie de transfert de chaleur est disposée à l'intérieur de la première base, qui est espacée plus loin de la surface de support de substrat que le dispositif de chauffage et dans une position correspondant à une première région, qui comprend une région centrale, de la surface de support de substrat. La deuxième partie de transfert de chaleur est disposée à l'intérieur de la première base, qui est espacée plus loin de la surface de support de substrat que le dispositif de chauffage et dans une position correspondant à une deuxième région entourant la première région, et possède une conductivité thermique supérieure à celle de la première partie de transfert de chaleur En outre, la deuxième base est refroidie.
PCT/JP2023/029148 2022-09-29 2023-08-09 Dispositif de traitement de substrat et procédé de traitement de substrat Ceased WO2024070267A1 (fr)

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JP2022156783 2022-09-29

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006049468A (ja) * 2004-08-03 2006-02-16 Toppan Printing Co Ltd ドライエッチング方法及びドライエッチング装置
JP2006526289A (ja) * 2003-03-28 2006-11-16 東京エレクトロン株式会社 基板の温度コントロールのための方法とシステム
JP2009534824A (ja) * 2006-04-21 2009-09-24 アイクストロン、アーゲー プロセスチャンバ内の基板表面温度制御装置及び方法
JP2013149977A (ja) * 2006-09-25 2013-08-01 Tokyo Electron Ltd 基板処理システム用の不均一な断熱層を有する温度制御された基板ホルダ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006526289A (ja) * 2003-03-28 2006-11-16 東京エレクトロン株式会社 基板の温度コントロールのための方法とシステム
JP2006049468A (ja) * 2004-08-03 2006-02-16 Toppan Printing Co Ltd ドライエッチング方法及びドライエッチング装置
JP2009534824A (ja) * 2006-04-21 2009-09-24 アイクストロン、アーゲー プロセスチャンバ内の基板表面温度制御装置及び方法
JP2013149977A (ja) * 2006-09-25 2013-08-01 Tokyo Electron Ltd 基板処理システム用の不均一な断熱層を有する温度制御された基板ホルダ

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