WO2023245741A1 - Method and apparatus for positioning defect in semiconductor device, and storage medium - Google Patents

Abstract

Provided in the present disclosure are a method and apparatus for positioning a defect in a semiconductor device, and a storage medium. The method comprises: acquiring first parameter information of a defect of a semiconductor device, wherein the first parameter information is described in a defect detection display system, and the first parameter information comprises parameter information of the defect of the semiconductor device described in a first coordinate system of the defect detection display system; converting the first parameter information into second parameter information described in a graphic data system, wherein the second parameter information comprises parameter information of the defect of the semiconductor device described in a second coordinate system of the graphic data system, and the first coordinate system and the second coordinate system have a preset relationship; and determining, in the graphic data system, the position of the defect of the semiconductor device according to the second parameter information.

Description

Method, device and storage medium for locating defects in semiconductor devices

This disclosure is based on a Chinese patent application with application number 202210726444.8 and a filing date of June 24, 2022, titled "Locating Method, Device and Storage Medium for Defects in Semiconductor Devices", and claims the priority of this Chinese patent application. The entire content of this Chinese patent application is hereby incorporated by reference into this disclosure.

Technical field

The present disclosure relates to, but is not limited to, a method, device and storage medium for locating defects in a semiconductor device.

Background technique

In related technologies, during the semiconductor production process, pattern manufacturing units such as photolithography, etching, and cleaning (Wet) will produce defects (Defect) in the wafer die. These defects are captured when passing through pattern defect inspection machines, such as bright field scanning (Bright Field scan) and electron beam scanner (E-beam review). Since the captured defects are often in the range of tens to hundreds of nanometers, it is difficult for engineers to locate pattern defects on the layout map of the wafer (die) or chip (chip), especially when making When bypassing non-repeating graphics structure layers in the Periphery Circuit or Core area, and having experienced engineers determine the location of graphics defects, it takes a lot of manpower and time.

Contents of the invention

The following is an overview of the subject matter described in detail in this disclosure. This summary is not intended to limit the scope of the claims.

The present disclosure provides a method, device and storage medium for locating defects in a semiconductor device.

A first aspect of the present disclosure provides a method for locating defects in a semiconductor device. The locating method includes:

Obtain first parameter information of the defects of the semiconductor device described under the defect detection display system, where the first parameter information includes parameter information of the defects of the semiconductor device described under the first coordinate system of the defect detection display system;

Convert the first parameter information into second parameter information described under the graphics data system; the second parameter information includes parameter information about defects of the semiconductor device described under the second coordinate system of the graphics data system , wherein the first coordinate system and the second coordinate system have a preset relationship;

According to the second parameter information, the location of the defect of the semiconductor device in the graphics data system is determined.

Wherein, the positioning method also includes:

According to the first coordinate system, the second coordinate system of the graphics data system is established according to preset rules.

Wherein, according to the first coordinate system, establishing the second coordinate system of the graphics data system according to preset rules includes:

According to the origin of the first coordinate system and the position of the guide mark of the semiconductor device in the first coordinate system, it is determined that the origin of the second coordinate system and the guide mark of the semiconductor device are at the second coordinate position in the coordinate system and establish the second coordinate system.

Wherein, the second parameter information includes the first initial coordinate of the defect of the semiconductor device in the second coordinate system;

Determining the location of the defect of the semiconductor device in the graphics data system according to the second parameter information includes:

Perform first deviation compensation on the first initial coordinate to obtain the first compensated coordinate;

After scaling the first compensated coordinates according to a first preset scaling ratio, the coordinates of the defects of the semiconductor device in the second coordinate system are obtained.

Wherein, the first deviation compensation is performed on the first initial coordinate to obtain the first compensated coordinate, including:

Based on the size of the alignment object mark, determine the size of the first deviation compensation;

The first offset compensated size is removed from the first initial coordinate to obtain the first compensated coordinate.

Wherein, according to the first coordinate system, establishing the second coordinate system of the graphics data system according to preset rules includes:

According to the origin of the first coordinate system and the position of the guide mark of the semiconductor device in the first coordinate system, it is determined that the origin of the second coordinate system and the guide mark of the semiconductor device are at the second coordinate position in the coordinate system and establish the second coordinate system;

A second preset scaling ratio of the semiconductor device in the second coordinate system is set.

Among them, converting the first parameter information into the second parameter information described under the graphics data system includes:

The first parameter information is converted into second parameter information based on the second preset scaling ratio in the second coordinate system.

Wherein, the second parameter information based on the second preset scaling ratio includes the second initial coordinate of the defect of the semiconductor device in the second coordinate system based on the second preset scaling ratio;

Determining the position of the defect of the semiconductor device in the second coordinate system according to the second parameter information includes:

Perform second deviation compensation on the second initial coordinate to obtain a second compensated coordinate;

The second compensated coordinates are used as the coordinates of the defects of the semiconductor device in the second coordinate system.

Wherein, the second initial coordinate is subjected to second deviation compensation to obtain the second compensated coordinate, including:

Determine the size of the second deviation compensation based on the size of the alignment object mark scaled by the second preset scaling ratio;

The second initial coordinate is removed by the second deviation compensated size to obtain the second compensated coordinate.

Wherein, the first parameter information includes at least one of the following parameter information: an identification of a defect of the semiconductor device, a coordinate of a defect of the semiconductor device, and a size of a defect of the semiconductor device.

A second aspect of the present disclosure provides a device for locating defects in a semiconductor device, the device including:

An acquisition module configured to acquire the first parameter information of the defect of the semiconductor device described under the defect detection display system, where the first parameter information includes the semiconductor device described under the first coordinate system of the defect detection display system. Parameter information of the defect;

A conversion module configured to convert the first parameter information into second parameter information described under a graphics data system; the second parameter information includes a semiconductor described under a second coordinate system of the graphics data system Parameter information of defects of the device, wherein the first coordinate system and the second coordinate system have a preset relationship;

The determining module is configured to determine the location of the defect of the semiconductor device in the graphics data system according to the second parameter information.

Wherein, the positioning device also includes:

The coordinate system conversion module is configured to establish the second coordinate system of the graphics data system according to preset rules according to the first coordinate system.

Wherein, the coordinate system conversion module is configured as:

According to the origin of the first coordinate system and the position of the guide mark of the semiconductor device in the first coordinate system, it is determined that the origin of the second coordinate system and the guide mark of the semiconductor device are at the second coordinate position in the coordinate system and establish the second coordinate system.

Wherein, the second parameter information includes the first initial coordinate of the defect of the semiconductor device in the second coordinate system; the determination module is configured to:

Perform first deviation compensation on the first initial coordinate to obtain the first compensated coordinate;

After scaling the first compensated coordinates according to a first preset scaling ratio, the coordinates of the defects of the semiconductor device in the second coordinate system are obtained.

Wherein, the determination module is configured as:

Based on the size of the alignment object mark, determine the size of the first deviation compensation;

The first offset compensated size is removed from the first initial coordinate to obtain the first compensated coordinate.

Wherein, the coordinate system conversion module is configured as:

According to the origin of the first coordinate system and the position of the guide mark of the semiconductor device in the first coordinate system, it is determined that the origin of the second coordinate system and the guide mark of the semiconductor device are at the second coordinate position in the coordinate system and establish the second coordinate system;

A second preset scaling ratio of the semiconductor device in the second coordinate system is set.

Wherein, the conversion module is configured as:

The first parameter information is converted into second parameter information based on the second preset scaling ratio in the second coordinate system.

Wherein, the second parameter information based on the second preset scaling ratio includes the second initial coordinate of the defect of the semiconductor device in the second coordinate system based on the second preset scaling ratio; The above determination module is configured as:

Perform second deviation compensation on the second initial coordinate to obtain a second compensated coordinate;

The second compensated coordinates are used as the coordinates of the defects of the semiconductor device in the second coordinate system.

Wherein, the determination module is configured as:

Determine the size of the second deviation compensation based on the size of the alignment object mark scaled by the second preset scaling ratio;

The second initial coordinate is removed by the second deviation compensated size to obtain the second compensated coordinate.

Wherein, the first parameter information includes at least one of the following parameter information: an identification of a defect of the semiconductor device, a coordinate of a defect of the semiconductor device, and a size of a defect of the semiconductor device.

A third aspect of the present disclosure provides a device for locating defects in a semiconductor device, the device including:

processor;

Memory used to store instructions executable by the processor;

Wherein, the processor is configured to execute the positioning method described in the first aspect.

A fourth aspect of the present disclosure provides a computer-readable storage medium that, when instructions in the computer-readable storage medium are executed by a processor of a positioning device, enables the positioning device to perform the positioning method described in the first aspect. .

The method, device and storage medium for locating defects in a semiconductor device provided by embodiments of the present disclosure convert the parameter information of the defects of the semiconductor device described in the first coordinate system of the defect detection and display system into corresponding data after corresponding processing. The second parameter information described in the graphics data system determines the defects of the semiconductor device based on the parameter information of the defects of the semiconductor device described in the second coordinate system, so as to quickly find and locate the defects of the semiconductor device directly through the second parameter information, thereby Provide accurate positioning information for defect scanning in semiconductor devices to online quality/quality data monitoring.

Other aspects will be apparent after reading and understanding the drawings and detailed description.

Description of the drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and, together with the description, serve to explain principles of the embodiments of the disclosure. In the drawings, similar reference numbers are used to identify similar elements. The drawings in the following description are of some, but not all, embodiments of the disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without exerting creative efforts.

Figure 1 is a flow chart of a method for locating defects in a semiconductor device according to an exemplary embodiment;

FIG. 2 is a layout diagram of a semiconductor device based on a first coordinate system according to an exemplary embodiment;

Figure 3 is a layout diagram of a semiconductor device based on a second coordinate system according to an exemplary embodiment;

Figure 4 is a flow chart of a method for locating defects in a semiconductor device according to an exemplary embodiment;

Figure 5 is a flow chart of a method for locating defects in a semiconductor device according to an exemplary embodiment;

Figure 6 is a flow chart of a method for locating defects in a semiconductor device according to an exemplary embodiment;

Figure 7 is a flow chart of a method for locating defects in a semiconductor device according to an exemplary embodiment;

Figure 8 is a flow chart of a method for locating defects in a semiconductor device according to an exemplary embodiment;

Figure 9 is a structural block diagram of a device for locating defects in a semiconductor device according to an exemplary embodiment;

FIG. 10 is a block diagram of an apparatus for defects in a semiconductor device according to an exemplary embodiment.

Detailed ways

The technical solutions in the disclosed embodiments will be clearly and completely described below with reference to the accompanying drawings in the disclosed embodiments. Obviously, the described embodiments are part of the embodiments of the present disclosure, rather than all of the embodiments. Based on the embodiments in this disclosure, all other embodiments obtained by those skilled in the art without making creative efforts fall within the scope of protection of this disclosure. It should be noted that, as long as there is no conflict, the embodiments and features in the embodiments can be arbitrarily combined with each other.

In the related art, in order to find defects in the layout pattern of semiconductor devices, they are captured when passing through pattern defect detection machines, such as bright field scanning and electron beam scanners. Since captured defects are often in the range of tens to hundreds of nanometers, it is difficult for engineers to locate pattern defects on the wafer or chip layout. The commonly used method currently is for experienced engineers to determine the location of defects on the graphics. This method requires a lot of manpower and time, and it is also difficult for engineers to locate the graphics defects on the wafer or chip layout, especially when doing bypass work. Circuit (Periphery Circuit) or non-repeating graphic structure layer in the core area.

The present disclosure exemplarily provides a method for locating defects in a semiconductor device by converting the first parameter information of defects of the semiconductor device scanned on a defect detection display system (such as a graphics defect detection machine) into a graphics data system. The second parameter information in the system can directly find and locate defects in semiconductor devices directly through the second parameter information, thereby providing accurate positioning information for defect scanning in semiconductor devices to online quality/quality data monitoring.

The present disclosure will be described below with reference to the accompanying drawings and specific embodiments.

Exemplary embodiments of the present disclosure provide a method for locating defects in a semiconductor device.

As shown in FIG. 1 , FIG. 1 is a flow chart of a method for locating defects in a semiconductor device according to an exemplary embodiment. This positioning method includes:

Step S101: Obtain first parameter information of defects of the semiconductor device described under the defect detection display system, where the first parameter information includes parameter information of defects of the semiconductor device described under the first coordinate system of the defect detection display system;

Step S102, convert the first parameter information into second parameter information described under the graphics data system; the second parameter information includes parameter information about defects of the semiconductor device described under the second coordinate system of the graphics data system, the first The coordinate system and the second coordinate system have a preset relationship;

Step S103: Determine the location of the defect of the semiconductor device in the graphics data system based on the second parameter information.

In this exemplary embodiment, considering that finding defects on the layout diagram of a semiconductor device is difficult and requires a lot of manpower and time costs, in order to reduce the difficulty of finding and locating defects in the semiconductor device and improve efficiency, the defects in the semiconductor device The positioning method converts the first parameter information about the semiconductor defect obtained during the defect scanning process of the semiconductor device into the second parameter information of the semiconductor device described in the graphic data system, so as to clearly locate the semiconductor device. defect.

During the semiconductor production process, the semiconductor device is scanned for defects through a semiconductor device defect detection and display system, such as using a bright field scanning machine. In order to describe the location of the defects of the semiconductor device, the defects of the semiconductor device scanned by the semiconductor device defect detection display system are marked on the layout diagram of the semiconductor device in its own coordinate system. The coordinate system corresponding to the defect detection display system is the first coordinate system. Graphics Data System (GDS, Graphic Design System) is an industrial standard file system that stores mask graphic information. Converting the defect-related information of the semiconductor device scanned by the defect detection display system into the corresponding related information illustrated in the graphic data system can more intuitively and accurately represent the location of the defects of the semiconductor device. The coordinate system corresponding to the graphics data system is the second coordinate system.

In the exemplary embodiment of the present disclosure, the relationship between the defects in the semiconductor device in the first coordinate system and the second coordinate system is established, and the defects of the semiconductor device will be described in the first coordinate system of the defect detection display system. After corresponding processing, the parameter information is correspondingly converted into the second parameter information described under the graphics data system, and the defects of the semiconductor device are determined based on the parameter information of the defects of the semiconductor device described under the second coordinate system. In the actual operation process, when the defect detection and display system is used to scan the semiconductor device for defects, the first coordinate system is the coordinate system corresponding to the defect detection and display system. The second coordinate system may include a coordinate system corresponding to the graphics data system. The first coordinate system and the second coordinate system are set in a preset relationship, so that when converting the first parameter information into the second parameter information, the defects of the semiconductor device can be accurately determined through the second parameter information according to the preset relationship. Location.

The parameter information of the defect of the semiconductor device described in the first coordinate system of the defect detection display system may include at least one of the following parameter information: the identification of the defect of the semiconductor device, the coordinates of the defect of the semiconductor device, the size. In the process of scanning the defects of the semiconductor device by the defect detection and display system, the identification, coordinates and size of the defects of the semiconductor device described in the first coordinate system are obtained, and correspondingly converted into the description in the second coordinate system of the graphics data system. Parameter information corresponding to defects of the semiconductor device. For example, the coordinates and size of the defect of the semiconductor device described in the first coordinate system can be converted into the coordinates and size of the defect described in the second coordinate system.

In an exemplary embodiment of the present disclosure, in the process of finding and locating defects in the semiconductor device through the defect locating method in the semiconductor device, the first parameter information of the defect of the semiconductor device is obtained after scanning the semiconductor device through the defect detection display system. , convert the obtained first parameter information into the second parameter information described under the graphics data system; according to the preset relationship between the first coordinate system and the second coordinate system, according to the second parameter information, it can be quickly and accurately Determine the location of defects in semiconductor devices. This method of locating defects in semiconductor devices can save engineers more than 90% of their time and improve work efficiency.

In some exemplary embodiments, in order to accurately convert the first parameter information in the first coordinate system of the defect detection display system into the second parameter information in the second coordinate system of the graphics data system, the semiconductor The defect positioning method in the device is based on the first coordinate system and establishes a second coordinate system according to preset rules, so that there is a correlation between the first coordinate system and the second coordinate system. That is, the preset relationship between the first coordinate system and the second coordinate system includes: establishing the second coordinate system of the graphics data system according to the first coordinate system and according to preset rules.

In this exemplary embodiment, in order to facilitate the accurate conversion of the obtained first parameter information described in the first coordinate system of the defect detection display system into the second parameter information in the second coordinate system of the graphics data system, you can Under the preset rules, a second coordinate system of the graphics data system is established according to the first coordinate system, so that the defect location of the semiconductor device itself can be accurately located through the second parameter information in the second coordinate system.

In some exemplary embodiments, considering that the second coordinate system is established according to preset rules to improve the accuracy of defect location results, the origin of the first coordinate system and the guide mark added to the semiconductor device can be used as a reference. to establish the second coordinate system. In this exemplary embodiment, establishing the second coordinate system of the graphics data system according to preset rules based on the first coordinate system may include:

According to the origin of the first coordinate system and the position of the guidance mark (Notch) of the semiconductor device in the first coordinate system, determine the origin of the second coordinate system and the position of the guidance mark (Notch) of the semiconductor device in the second coordinate system, and establish the second Coordinate System.

As shown in FIG. 2 , FIG. 2 is a layout diagram of a semiconductor device based on a first coordinate system of a defect detection display system provided according to an exemplary embodiment of the present disclosure. In Figure 2, the triangle mark is the position of the guide mark, and the position labeled 300 is the origin of the first coordinate system. In this example, in the first coordinate system, the guide mark is located on the left side of the layout diagram of the semiconductor device; in the second coordinate system, that is, in the graphics data system, the origin of the coordinate system is the same as the origin of the first coordinate system Similarly, the guide mark is located on the bottom side of the layout diagram of the semiconductor device. For example, the first coordinate system can be rotated counterclockwise by 90 degrees to form a second coordinate system. As shown in FIG. 3 , FIG. 3 shows a layout diagram of a semiconductor device based on a second coordinate system of a graphics data system provided according to an exemplary embodiment of the present disclosure. As shown in Table 1, Table 1 exemplarily shows the transformation of the coordinates of the defects of the semiconductor device in the first coordinate system of the defect detection display system into the defects of the semiconductor device in the second coordinate system of the graphics data system. A comparison list of coordinates, where the units of the X-axis and Y-axis are both microns um.

Table 1, comparison list of defects of semiconductor devices in the first coordinate system and the second coordinate system

In the exemplary embodiment of the present disclosure, the first coordinate system is rotated 90 degrees counterclockwise as an example for explanation. The first coordinate system can also be processed in other rotation methods, such as translation, rotation or flipping, etc., and its origin It suffices to determine the corresponding preset relationship with the guidance mark, which will not be described again here.

This method of locating defects in a semiconductor device uses the origin of the first coordinate system and the position of the guide mark as a reference to determine the origin of the second coordinate system and the position of the guide mark of the semiconductor device in the second coordinate system, and Establish the second coordinate system of the graphics data system to establish the relationship between the first coordinate system and the second coordinate system based on the coordinate origin and the guidance mark, so as to convert the first parameter information into the second parameter information. Finally, the location of the defect of the semiconductor device is accurately located through the second parameter information. Among them, using the origin of the first coordinate system to determine the origin of the second coordinate system ensures that there is a unified reference position between the two coordinate systems. For example, during the scaling conversion process, it is easy to determine the location of defects in the semiconductor device in the second coordinate system. Location. In addition, the guide mark can be used as a reference for the identification of semiconductor devices to accurately determine the specific location of defects in the semiconductor device. For example, the guide mark (Notch) may be a notch opened on the wafer.

In some exemplary embodiments, the second parameter information includes first initial coordinates of the defect in the semiconductor device in the second coordinate system. Considering that the dicing track size of the wafer die in the semiconductor device will affect the coordinates of the defect position in the second coordinate system, therefore, compensation processing needs to be performed when determining the position of the defect in the semiconductor device in the second coordinate system. As shown in Figure 4, Figure 4 is a flow chart of a method for locating defects in a semiconductor device according to an exemplary embodiment. In this exemplary embodiment, according to the second parameter information, it is determined that the defect of the semiconductor device is in the pattern. Location in the data system, including:

Step S401, perform first deviation compensation on the first initial coordinate to obtain the first compensated coordinate;

Step S402: After scaling the first compensated coordinates according to the first preset scaling ratio, the coordinates of the defects of the semiconductor device in the second coordinate system are obtained.

In this exemplary embodiment, since during the defect scanning process of the semiconductor device, the coordinate information of the defect calculates, for example, the dicing track size, for example, to accurately identify the defects of the semiconductor device, the first initial coordinate needs to be compensated for the deviation. After performing the first deviation compensation on the first initial coordinate, the first compensated coordinate is obtained. In order to make the measurement of the position of the corresponding defect of the semiconductor device and the corresponding coordinate information in the second coordinate system in the graphics data system correspond to the position and coordinate information of the defect of the semiconductor device described in the first coordinate system, it is necessary The first post-compensation coordinates are adjusted by a first preset scaling ratio to obtain the coordinates of the defects of the semiconductor device in the second coordinate system. The first preset scaling ratio can be set according to actual needs, for example, if the first initial coordinate of the defect of the semiconductor device included in the second parameter information in the second coordinate system corresponds to the defect of the semiconductor device in the first coordinate system If the coordinate information matches, the first preset scaling ratio can be set to 1.

The positioning method in this exemplary embodiment also considers that during the defect scanning process of the semiconductor device, for example, the size of the cutting track is also calculated. Therefore, the first initial coordinates in converting the first parameter information into the second parameter information are The information is compensated to ensure the accuracy of the coordinates of the defects of the semiconductor device in the second coordinate system, thereby improving the accuracy of the defect positioning method in the semiconductor device.

In some exemplary embodiments, when solving the impact of the cutting track size on the first initial coordinate determined by the defect location in the second coordinate system, the set alignment object mark can be used to determine the first initial coordinate Make compensation adjustments. For example, half the size of the cutting lane can be used as the size of the alignment mark. As shown in Figure 5, Figure 5 is a flow chart of a method for locating defects in a semiconductor device according to an exemplary embodiment. In this exemplary embodiment, the first initial coordinate is compensated for the first deviation to obtain the first One coordinate after compensation, including:

Step S501, determine the size of the first deviation compensation based on the size of the alignment object mark;

Step S502: Remove the first deviation compensated size from the first initial coordinate to obtain the first compensated coordinate.

In this exemplary embodiment, in order to accurately determine the location of the defect of the semiconductor device, half the size of the cutting track, that is, the size of the alignment mark, can be used as the size of the deviation compensation. After removing the first initial coordinates from the alignment The coordinates of the size of the object mark are used as the first compensation coordinates.

In an exemplary embodiment of the present disclosure, as shown in FIG. 2 , FIG. 2 is a layout diagram of a semiconductor device based on a first coordinate system of a defect detection display system provided according to an exemplary embodiment of the present disclosure. In Figure 2, the triangle mark is the position of the guide mark, and the position labeled 300 is the origin of the first coordinate system. In this example, in the first coordinate system, the guide mark is located on the left side of the layout diagram of the semiconductor device; in the second coordinate system, that is, in the graphics data system, the origin of the coordinate system is the same as the origin of the first coordinate system Similarly, the guide mark is located on the bottom side of the layout diagram of the semiconductor device. For example, the first coordinate system can be rotated counterclockwise by 90 degrees to form a second coordinate system. As shown in FIG. 3 , FIG. 3 shows a layout diagram of a semiconductor device based on a second coordinate system provided according to an exemplary embodiment of the present disclosure. As shown in Table 2, Table 2 is a comparison of the coordinates of the defects of the semiconductor device in the second coordinate system before and after compensation and before and after scaling according to the first preset scaling ratio (SF) shown in the exemplary embodiment of the present disclosure. List where the X and Y axes are in microns and the size of the alignment mark is half the size of the scribe line (SL).

Table 2. Comparison list of coordinates of semiconductor device defects before and after compensation in the second coordinate system and before and after scaling according to the first preset scaling ratio

As can be seen from Table 2, in this embodiment, since the origins of the first coordinate system and the second coordinate system are the same, and the second coordinate system is formed by rotating the first coordinate system 90 degrees counterclockwise, therefore, the defects of the semiconductor device The coordinate values of the X-axis and the Y-axis in the first coordinate system are interchangeable with the coordinate values of the X-axis and Y-axis of the defects of the semiconductor device in the second coordinate system, and due to the second The coordinate system is formed by rotating the first coordinate system counterclockwise by 90 degrees, so that the coordinate value of the X-axis of the defect of the semiconductor device in the second coordinate system is a negative number.

In order to remove the influence of the dicing line on the coordinates of the defects of the semiconductor device, the size of the alignment mark is used as the first deviation compensation size, that is, half the size of the dicing line (SL) is used as the first deviation compensation size. In the example given in Table 2, the third row lists the first compensated coordinates after the first initial coordinate undergoes the first deviation compensation. The coordinate values of the X-axis and the Y-axis are respectively (-y +SL/2) microns and (x-SL/2) microns, where SL represents the size of the cutting track, that is, the size of the cutting track along the X-axis direction and the Y-axis direction.

In order to make the measurement of the position of the corresponding defect of the semiconductor device and the corresponding coordinate information in the second coordinate system in the graphics data system correspond to the position and coordinate information of the defect of the semiconductor device described in the first coordinate system, it is necessary The first post-compensation coordinates are adjusted by a first preset scaling ratio to obtain the coordinates of the defects of the semiconductor device in the second coordinate system. In the example given in Table 2, the fourth row lists the coordinates of the defects of the semiconductor device in the second coordinate system obtained after the first compensated coordinates are scaled by the first preset scaling ratio, and the coordinate value of the X-axis The coordinate values of the and Y-axes are ((-y+SL/2)/SF) micrometers and ((x-SL/2)/SF) micrometers respectively, where SF represents the first preset scaling ratio.

In the examples provided in the disclosure, for example, Table 3 shows the coordinates of the defects of the semiconductor device in the second coordinate system provided by the exemplary embodiments of the present disclosure before and after compensation and according to the first preset. Comparison list before and after scaling.

Table 3. Comparison list of coordinates of semiconductor device defects before and after compensation in the second coordinate system and before and after scaling according to the first preset scaling ratio

As can be seen from Table 3, in this embodiment, since the origins of the first coordinate system and the second coordinate system are the same, and the second coordinate system is formed by rotating the first coordinate system 90 degrees counterclockwise, therefore, the defects of the semiconductor device The coordinate values of the X-axis and the Y-axis in the first coordinate system are interchangeable with the coordinate values of the X-axis and Y-axis of the defects of the semiconductor device in the second coordinate system, and due to the second The coordinate system is formed by rotating the first coordinate system counterclockwise by 90 degrees, so that the coordinate value of the X-axis of the defect of the semiconductor device in the second coordinate system is a negative number. In the example given in Table 3, the X-axis coordinate value and Y-axis coordinate value of the defect of the semiconductor device in the first coordinate system are 7483.2 microns and 655.3 microns respectively. The X-axis coordinate value and the Y-axis coordinate value of the first initial coordinate of the defect of the semiconductor device in the second coordinate system are -655.3 microns and 7483.2 microns respectively.

In order to remove the influence of the dicing line on the coordinates of the defects of the semiconductor device, the size of the alignment mark is used as the first deviation compensation size, that is, half the size of the dicing line (SL) is used as the first deviation compensation size. In the example given in Table 3, the third row lists the first compensated coordinates after the first initial coordinate has undergone the first deviation compensation. The coordinate values of the X-axis and the Y-axis are -610.3 microns respectively. and 7438.2 microns. It can be seen that the size of the scribe line (SL) is 90 microns along the X-axis direction and 90 microns along the Y-axis direction.

In order to make the measurement of the position of the corresponding defect of the semiconductor device and the corresponding coordinate information in the second coordinate system in the graphics data system correspond to the position and coordinate information of the defect of the semiconductor device described in the first coordinate system, it is necessary The first post-compensation coordinates are adjusted by a first preset scaling ratio to obtain the coordinates of the defects of the semiconductor device in the second coordinate system. In the example given in Table 3, the fourth row lists the coordinates of the defects of the semiconductor device in the second coordinate system obtained after the first compensated coordinates are scaled by the first preset scaling ratio, and the coordinate value of the X-axis The coordinate values of the and Y-axis are -1695.3 microns and 20661.7 microns respectively. It can be seen from this that the first preset scaling ratio is 0.36.

In some exemplary embodiments, in order to accurately convert the first parameter information in the first coordinate system into the second parameter information in the second coordinate system, the defect positioning method in the semiconductor device adopts a method based on the first coordinate system. A coordinate system, according to preset rules, establishes a second coordinate system to make the first coordinate system and the second coordinate system relevant, and performs parameter information described in the second coordinate system according to the second preset scaling ratio. Zoom to accurately and quickly find the location of defects in semiconductor devices. As shown in Figure 6, Figure 6 is a flow chart of a method for locating defects in a semiconductor device according to an exemplary embodiment. According to the first coordinate system, a second coordinate system of the graphics data system is established according to preset rules, including :

Step S601: Determine the origin of the second coordinate system and the position of the guide mark of the semiconductor device in the second coordinate system based on the origin of the first coordinate system and the position of the guide mark of the semiconductor device in the first coordinate system, and establish a second coordinate system. Coordinate System;

Step S602: Set a second preset scaling ratio of the semiconductor device in the second coordinate system.

In this exemplary embodiment, the method for locating defects in a semiconductor device obtains the first parameter information of the defect of the semiconductor device, based on the origin of the first coordinate system in the first parameter information and the orientation of the semiconductor device in the first coordinate system. The position of the mark, determine the origin of the second coordinate system and the position of the guidance mark of the semiconductor device in the second coordinate system, establish the second coordinate system, and set the second preset scaling ratio of the semiconductor device in the second coordinate system ; Based on the second coordinate system in which the second preset scaling ratio is set, the first parameter information can be converted into the second parameter information that is scaled according to the second preset scaling ratio described under the graphics data system, according to the second The second parameter information scaled by two preset scaling ratios can quickly and accurately determine the position of the defect of the semiconductor device in the second coordinate system.

In an exemplary embodiment of the present disclosure, as shown in FIG. 2 , FIG. 2 is a layout diagram of a semiconductor device based on a first coordinate system provided according to an exemplary embodiment of the present disclosure. In Figure 2, the triangle mark is the position of the guide mark, and the position labeled 300 is the origin of the first coordinate system. In this example, in the first coordinate system, the guide mark is located on the left side of the layout diagram of the semiconductor device; in the second coordinate system, that is, in the graphics data system, the origin of the coordinate system is the same as the origin of the first coordinate system Similarly, the guide mark is located on the bottom side of the layout diagram of the semiconductor device. For example, the first coordinate system can be rotated counterclockwise by 90 degrees to form a second coordinate system. As shown in FIG. 3 , FIG. 3 shows a layout diagram of a semiconductor device based on a second coordinate system provided according to an exemplary embodiment of the present disclosure. As shown in Table 4, Table 4 is a comparison list before and after scaling of the coordinates of the defects of the semiconductor device in the second coordinate system shown in the exemplary embodiment of the present disclosure, where the units of the X-axis and the Y-axis are both microns. Um.

Table 4: Comparison list of coordinates of semiconductor device defects before and after scaling in the second coordinate system

As can be seen from Table 4, in this embodiment, since the origins of the first coordinate system and the second coordinate system are the same, and the second coordinate system is formed by rotating the first coordinate system 90 degrees counterclockwise, therefore, the defects of the semiconductor device The coordinate values of the X-axis and the Y-axis in the first coordinate system are interchangeable with the coordinate values of the X-axis and Y-axis of the defects of the semiconductor device in the second coordinate system, and due to the second The coordinate system is formed by rotating the first coordinate system counterclockwise by 90 degrees, so that the coordinate value of the X-axis of the defect of the semiconductor device in the second coordinate system is a negative number.

In order to make the measurement of the position of the corresponding defect of the semiconductor device and the corresponding coordinate information in the second coordinate system in the graphics data system correspond to the position and coordinate information of the defect of the semiconductor device described in the first coordinate system, it is necessary The second initial coordinates are adjusted to a second preset scaling ratio to obtain the coordinates of the defects of the semiconductor device in the second coordinate system. In the example given in Table 4, the third row lists the coordinates of the defects of the semiconductor device in the second coordinate system obtained after the first initial coordinate is scaled by the second preset scaling ratio. The coordinate values of the X-axis and The coordinate values of the Y-axis are (-y/SF') microns and (x/SF') microns respectively, where SF' represents the second preset scaling ratio.

In some exemplary embodiments, converting the first parameter information into second parameter information described under the graphics data system includes: converting the first parameter information into the second parameter information based on the second coordinate system. 2. The second parameter information of the preset scaling ratio.

In some exemplary embodiments, the second parameter information based on the second preset scaling ratio includes second initial coordinates of the defect of the semiconductor device in the second coordinate system based on the second preset scaling ratio. Considering that the dicing track size of the wafer die in the semiconductor device will affect the coordinates of the defect position in the second coordinate system, therefore, compensation processing needs to be performed when determining the position of the defect in the semiconductor device in the second coordinate system. As shown in Figure 7, Figure 7 is a flow chart of a method for locating defects in a semiconductor device according to an exemplary embodiment. In this exemplary embodiment, according to the second parameter information, it is determined that the defect of the semiconductor device is in the first The position in the second coordinate system includes:

Step S701, perform second deviation compensation on the second initial coordinate to obtain the second compensated coordinate;

Step S702: Use the second compensated coordinates as the coordinates of the defects of the semiconductor device in the second coordinate system.

In this exemplary embodiment, after performing a second deviation compensation process on the second initial coordinate, a second compensated coordinate is obtained, and the second compensated coordinate can more accurately describe the defect location of the semiconductor device.

In some exemplary embodiments, when solving the impact of the cutting track size on the second initial coordinate determined in the second coordinate system of the defect location, the second initial coordinate may be determined in combination with the set size of the alignment mark. The initial coordinates are compensated and adjusted, for example, half the size of the cutting lane can be used as the size of the alignment mark. As shown in Figure 8, Figure 8 is a flow chart of a method for locating defects in a semiconductor device according to an exemplary embodiment. In this exemplary embodiment, the second initial coordinate is subjected to a second deviation compensation to obtain the second deviation. 2. Coordinates after compensation, including:

Step S801, determine the size of the second deviation compensation based on the size of the alignment object mark scaled by the second preset scaling ratio;

Step S802: Remove the second deviation compensated size from the second initial coordinate to obtain the second compensated coordinate.

In this exemplary embodiment, when converting the first parameter information into the second parameter information in the second coordinate system, in order to make the position of the corresponding defect of the semiconductor device in the second coordinate system in the graphics data system The measured and corresponding coordinate information corresponds to the position and coordinate information of the defect of the semiconductor device described in the first coordinate system, and the second initial coordinates are adjusted with a second preset scaling ratio to obtain the defect of the semiconductor device in the second coordinate system. coordinates in the coordinate system. Therefore, when performing deviation compensation, the size of the alignment object mark also needs to be scaled according to the second preset scaling ratio to determine the size of the second deviation compensation. After removing the size of the second deviation compensation from the second initial coordinate adjusted by the second preset scaling ratio, a second compensated coordinate is obtained.

In some exemplary embodiments, the first parameter information includes at least one of the following parameter information: an identification of a defect of the semiconductor device, a coordinate of the defect of the semiconductor device, and/or a size of the defect of the semiconductor device.

In an exemplary embodiment of the present disclosure, as shown in FIG. 2 , FIG. 2 is a layout diagram of a semiconductor device based on a first coordinate system provided according to an exemplary embodiment of the present disclosure. In Figure 2, the triangle mark is the position of the guide mark, and the position labeled 300 is the origin of the first coordinate system. In this example, in the first coordinate system, the guide mark is located on the left side of the layout diagram of the semiconductor device; in the second coordinate system, that is, in the graphics data system, the origin of the coordinate system is the same as the origin of the first coordinate system Similarly, the guide mark is located on the bottom side of the layout diagram of the semiconductor device. For example, the first coordinate system can be rotated counterclockwise by 90 degrees to form a second coordinate system. As shown in Figure 3, Figure 3 shows a layout diagram of a semiconductor device based on a second coordinate system provided according to an exemplary embodiment of the present disclosure. As shown in Table 5, Table 5 is a comparison list of the defect coordinates of the semiconductor device in the second coordinate system before and after scaling according to the second preset scaling ratio and before and after compensation according to an exemplary embodiment of the present disclosure, where the X-axis The units of the and Y-axis are microns um.

Table 5, comparison list of defect coordinates of semiconductor devices in the second coordinate system before and after scaling according to the second preset scaling ratio and before and after compensation

As can be seen from Table 5, in this embodiment, since the origin of the first coordinate system and the second coordinate system are the same, and the second coordinate system is formed by rotating the first coordinate system 90 degrees counterclockwise, therefore, the defects of the semiconductor device The coordinate values of the X-axis and the Y-axis in the first coordinate system are interchangeable with the coordinate values of the X-axis and Y-axis of the defects of the semiconductor device in the second coordinate system, and due to the second The coordinate system is formed by rotating the first coordinate system counterclockwise by 90 degrees, so that the coordinate value of the X-axis of the defect of the semiconductor device in the second coordinate system is a negative number.

In order to make the measurement of the position of the corresponding defect of the semiconductor device and the corresponding coordinate information in the second coordinate system in the graphics data system correspond to the position and coordinate information of the defect of the semiconductor device described in the first coordinate system, it is necessary The second initial coordinates are adjusted to a second preset scaling ratio to obtain the coordinates of the defects of the semiconductor device in the second coordinate system. In the example given in Table 5, the third row lists the coordinates of the defects of the semiconductor device in the second coordinate system obtained after scaling by the second preset scaling ratio, the coordinate values of the X-axis and the coordinates of the Y-axis. The values are (-y/SF') microns and (x/SF') microns respectively, where SF' represents the second preset scaling ratio.

In order to remove the influence of the cutting lane on the coordinates of the defects of the semiconductor device, the size of the alignment mark scaled according to the second preset scaling ratio is used as the second deviation compensation size, that is, the size of the alignment mark scaled according to the second preset scaling ratio can be Half of the cutting track size is used as the second deviation compensation. In the example given in Table 5, what is listed in the fourth row is the second compensated coordinate obtained after the second deviation compensation is performed on the second initial coordinate scaled according to the second preset scaling ratio. The coordinate value of the X-axis and The coordinate values of the Y-axis are (-y/SF'+SL'/2) microns and (x/SF'-SL'/2) microns respectively, where SL' represents the cutting after scaling according to the second preset scaling ratio The size of the track, that is, the size of the cutting track along the X-axis direction and the Y-axis direction after being scaled according to the second preset scaling ratio.

In the examples provided in the disclosure, for example, as shown in Table 6, Table 6 shows the coordinates of the defects of the semiconductor device in the second coordinate system before and after scaling according to the second preset scaling ratio according to the exemplary embodiment of the present disclosure. and a comparison list before and after compensation.

Table 6: Comparison list of coordinates of semiconductor device defects before and after compensation in the second coordinate system and before and after scaling according to the second preset scaling ratio

As can be seen from Table 6, in this embodiment, since the origins of the first coordinate system and the second coordinate system are the same, and the second coordinate system is formed by rotating the first coordinate system 90 degrees counterclockwise, therefore, the defects of the semiconductor device The coordinate values of the X-axis and the Y-axis in the first coordinate system are interchangeable with the coordinate values of the X-axis and Y-axis of the defects of the semiconductor device in the second coordinate system, and due to the second The coordinate system is formed by rotating the first coordinate system counterclockwise by 90 degrees, so that the coordinate value of the X-axis of the defect of the semiconductor device in the second coordinate system is a negative number. In the example given in Table 3, the X-axis coordinate value and Y-axis coordinate value of the defect of the semiconductor device in the first coordinate system are 7483.2 microns and 655.3 microns respectively. The X-axis coordinate value and the Y-axis coordinate value of the first initial coordinate of the defect of the semiconductor device in the second coordinate system are -655.3 microns and 7483.2 microns respectively.

In order to make the measurement of the position of the corresponding defect of the semiconductor device and the corresponding coordinate information in the second coordinate system in the graphics data system correspond to the position and coordinate information of the defect of the semiconductor device described in the first coordinate system, it is necessary The second post-compensation coordinates are adjusted to a second preset scaling ratio to obtain the coordinates of the defects of the semiconductor device in the second coordinate system. In the example given in Table 6, the third row lists the coordinates of the defects of the semiconductor device in the second coordinate system obtained after scaling by the second preset scaling ratio, the coordinate values of the X-axis and the coordinates of the Y-axis. The values are -1820.3 microns and 20786.7 microns respectively. It can be seen that the second preset scaling ratio is 0.36.

In order to remove the influence of the cutting lane on the coordinates of the defects of the semiconductor device, the size of the alignment mark scaled according to the second preset scaling ratio is used as the second deviation compensation size. In the example given in Table 6, the fourth row lists the second compensated coordinates after the second initial coordinate has undergone the second deviation compensation. The coordinate values of the X-axis and the Y-axis are -1695.3 microns respectively. and 20661.7 microns. It can be seen from this that since the second initial coordinates are first scaled by the second preset scaling ratio and then compensated, the size of the alignment object mark is also scaled by the second preset scale during compensation. Proportional scaling. The size of the alignment mark is half the size of the cutting lane (SL). The size of the cutting lane can be scaled by a second preset scaling ratio to obtain a second compensation deviation compensation size. The second compensated coordinate is compensated by 125 microns on the X-axis ((-1695.3)-(-1820.3)), the second compensated coordinate is compensated by 125 microns on the Y-axis (20786.7-20661.1), and the scaling ratio is 0.36 . It can be seen that the size of the scribe line (SL) is 90 microns along the X-axis direction and 90 microns along the Y-axis direction.

Exemplary embodiments of the present disclosure provide a device for locating defects in a semiconductor device. As shown in Figure 9, Figure 9 is a structural block diagram of a device for locating defects in a semiconductor device according to an exemplary embodiment. In this exemplary embodiment, the positioning device 900 includes:

The acquisition module 901 is configured to acquire the first parameter information of the defects of the semiconductor device described under the defect detection display system, where the first parameter information includes the parameter information of the defects of the semiconductor device described under the first coordinate system of the defect detection display system. ;

The conversion module 903 is configured to convert the first parameter information into second parameter information described under the graphics data system; the second parameter information includes parameter information about defects of the semiconductor device described under the second coordinate system of the graphics data system. , where the first coordinate system and the second coordinate system have a preset relationship;

The determining module 904 is configured to determine the location of the defect of the semiconductor device in the graphics data system according to the second parameter information.

In some exemplary embodiments, the positioning device further includes:

The coordinate system conversion module 902 is configured to establish a second coordinate system of the graphics data system according to the first coordinate system and according to preset rules.

In some exemplary embodiments, the coordinate system transformation module 902 is configured to:

According to the origin of the first coordinate system and the position of the guide mark of the semiconductor device in the first coordinate system, the origin of the second coordinate system and the position of the guide mark of the semiconductor device in the second coordinate system are determined, and the second coordinate system is established.

In some exemplary embodiments, the second parameter information includes the first initial coordinate of the defect of the semiconductor device in the second coordinate system; the determination module 904 is configured to:

Perform first deviation compensation on the first initial coordinate to obtain the first compensated coordinate;

After scaling the first compensated coordinates according to the first preset scaling ratio, the coordinates of the defects of the semiconductor device in the second coordinate system are obtained.

In some exemplary embodiments, determination module 904 is configured to:

Based on the size of the alignment object mark, determine the size of the first deviation compensation;

The first initial coordinate is removed by the size of the first deviation compensation to obtain the first compensated coordinate.

In some exemplary embodiments, the coordinate system transformation module 902 is configured to:

Determine the origin of the second coordinate system and the position of the guide mark of the semiconductor device in the second coordinate system based on the origin of the first coordinate system and the position of the guide mark of the semiconductor device in the first coordinate system, and establish the second coordinate system;

Set a second preset scaling ratio of the semiconductor device in the second coordinate system.

In some exemplary embodiments, conversion module 903 is configured to:

Convert the first parameter information into second parameter information based on the second preset scaling ratio in the second coordinate system.

In some exemplary embodiments, the second parameter information based on the second preset scaling ratio includes the second initial coordinate of the defect of the semiconductor device in the second coordinate system based on the second preset scaling ratio; the determining module 904 is Configured as:

Perform second deviation compensation on the second initial coordinate to obtain the second compensated coordinate;

The second compensated coordinates are used as the coordinates of the defects of the semiconductor device in the second coordinate system.

In some exemplary embodiments, determination module 904 is configured to:

Determine the size of the second deviation compensation based on the size of the alignment object mark scaled by the second preset scaling ratio;

The second initial coordinate is removed by the size of the second deviation compensation to obtain the second compensated coordinate.

In some exemplary embodiments, the first parameter information includes at least one of the following parameter information: an identification of a defect of the semiconductor device, a coordinate of the defect of the semiconductor device, and a size of the defect of the semiconductor device.

In this exemplary embodiment, considering that finding defects on the layout diagram of a semiconductor device is difficult and requires a lot of manpower and time costs, in order to reduce the difficulty of finding and locating defects in the semiconductor device and improve efficiency, the defects in the semiconductor device The positioning device can obtain the first parameter information of the defect of the semiconductor device described under the defect detection display system through the acquisition module 901. The first parameter information includes the parameters of the defect of the semiconductor device described under the first coordinate system of the defect detection display system. Information; the coordinate system conversion module 902 establishes the second coordinate system of the graphics data system according to the first coordinate system and preset rules; the conversion module 903 converts the first parameter information into the second parameter information described under the graphics data system; The second parameter information includes parameter information of defects of the semiconductor device described in the second coordinate system of the graphics data system, where the first coordinate system and the second coordinate system have a preset relationship; the determination module 904 determines the semiconductor device according to the second parameter information. The location of the device's defects in the graphics data system can clearly locate the defects in the semiconductor device.

During the semiconductor production process, the positioning device scans the semiconductor device for defects through a defect detection and display system of the semiconductor device, for example, using a bright field scanning machine. In order to describe the location of the defects of the semiconductor device, the defects of the semiconductor device scanned by the semiconductor device defect detection display system are marked on the layout diagram of the semiconductor device in its own coordinate system. The coordinate system corresponding to the defect detection display system is the first coordinate system. The coordinate system corresponding to the graphics data system is the second coordinate system.

In this exemplary embodiment, the positioning device is used to establish the relationship between the first coordinate system and the second coordinate system of the defects in the semiconductor device. The defects of the semiconductor device will be described in the first coordinate system of the defect detection display system. The parameter information is correspondingly converted into the second parameter information described under the graphics data system after corresponding processing, and the defect of the semiconductor device is determined according to the parameter information of the defect of the semiconductor device described under the second coordinate system. In the actual operation process, when the defect detection and display system is used to scan the semiconductor device for defects, the first coordinate system is the coordinate system corresponding to the defect detection and display system. The second coordinate system may include a coordinate system corresponding to the graphics data system. The first coordinate system and the second coordinate system are set in a preset relationship, so that when converting the first parameter information into the second parameter information, the defects of the semiconductor device can be accurately determined through the second parameter information according to the preset relationship. Location.

In this exemplary embodiment, when the device for locating defects in a semiconductor device searches for and locates defects in the semiconductor device, the first parameter information of the defect of the semiconductor device is obtained after scanning the semiconductor device through the defect detection display system, and the obtained first parameter information is The first parameter information is converted into the second parameter information described under the graphics data system; according to the preset relationship between the first coordinate system and the second coordinate system, according to the second parameter information, the semiconductor device can be quickly and accurately determined The location of the defect. This device for locating defects in semiconductor devices can save engineers more than 90% of their time and improve work efficiency. Regarding the devices in the above embodiments, the specific manner in which each module performs operations has been described in detail in the embodiments related to the method, and will not be described in detail here.

FIG. 10 is a block diagram of a device for locating defects in a semiconductor device, that is, a computer device 1000 according to an exemplary embodiment. For example, computer device 1000 may be provided as a positioning device. Referring to Figure 10, a computer device 1000 includes a processor 1001, and the number of processors can be set to one or more as needed. Computer device 1000 also includes memory 1002 for storing instructions, such as application programs, executable by processor 1001 . The number of memories can be set to one or more as needed. The stored applications can be one or more. The processor 1001 is configured to execute instructions to perform the above method.

It should be understood by those skilled in the art that embodiments of the present disclosure may be provided as methods, apparatuses (devices), or computer program products. Accordingly, the present disclosure may take the form of an entirely hardware embodiment, an entirely software embodiment, or an embodiment that combines software and hardware aspects. Furthermore, the present disclosure may take the form of a computer program product embodied on one or more computer-usable storage media having computer-usable program code embodied therein. Computer storage media includes volatile and nonvolatile, removable and non-removable media implemented in any method or technology for storage of information such as computer readable instructions, data structures, program modules or other data , including but not limited to RAM, ROM, EEPROM, flash memory or other memory technology, CD-ROM, Digital Versatile Disk (DVD) or other optical disk storage, magnetic cassettes, tapes, magnetic disk storage or other magnetic storage devices, or may be used Any other medium that stores the desired information and can be accessed by the computer, etc. Furthermore, it is known to those of skill in the art that communication media typically embodies computer readable instructions, data structures, program modules or other data in a modulated data signal such as a carrier wave or other transport mechanism and may include any information delivery media.

In an exemplary embodiment, a computer-readable storage medium, such as a non-transitory computer-readable storage medium, such as a memory 1002 including instructions, executable by the processor 1001 of the device 1000 to complete the above is provided. method. For example, the non-transitory computer-readable storage medium may be ROM, random access memory (RAM), CD-ROM, magnetic tape, floppy disk, optical data storage device, etc.

In an exemplary embodiment of the present disclosure, a non-transitory computer-readable storage medium is provided so that a positioning device can perform the method for locating defects in a semiconductor device provided by the exemplary embodiment of the present disclosure.

The disclosure is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (apparatus) and computer program products according to embodiments of the disclosure. It will be understood that each process and/or block in the flowchart illustrations and/or block diagrams, and combinations of processes and/or blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing device to produce a machine, such that the instructions executed by the processor of the computer or other programmable data processing device produce a use A device for realizing the functions specified in one process or multiple processes of the flowchart and/or one block or multiple blocks of the block diagram.

These computer program instructions may also be stored in a computer-readable memory that causes a computer or other programmable data processing apparatus to operate in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including the instruction means, the instructions The device implements the functions specified in a process or processes of the flowchart and/or a block or blocks of the block diagram.

These computer program instructions may also be loaded onto a computer or other programmable data processing device, causing a series of operating steps to be performed on the computer or other programmable device to produce computer-implemented processing, thereby executing on the computer or other programmable device. Instructions provide steps for implementing the functions specified in a process or processes of a flowchart diagram and/or a block or blocks of a block diagram.

Each embodiment or implementation mode in this specification is described in a progressive manner. Each embodiment focuses on its differences from other embodiments. The same and similar parts between various embodiments can be referred to each other.

In the description of this specification, reference to the description of the terms "embodiments," "exemplary embodiments," "some embodiments," "illustrative embodiments," "examples," etc. is intended to be described in connection with the embodiments or examples. A specific feature, structure, material, or characteristic is included in at least one embodiment or example of the present disclosure.

In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

In the description of the present disclosure, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present disclosure and simplifying the description. It does not indicate or imply that the indicated device or element must have a specific orientation or a specific orientation. construction and operation, and therefore should not be construed as limitations on the present disclosure.

It will be understood that the terms "first", "second", etc. used in this disclosure may be used to describe various structures in this disclosure, but these structures are not limited by these terms. These terms are used only to distinguish one structure from another.

In one or more of the figures, identical elements are designated with similar reference numbers. For the sake of clarity, various parts of the figures are not drawn to scale. Additionally, some well-known parts may not be shown. For the sake of simplicity, the structure obtained after several steps can be described in one figure. Many specific details of the present disclosure are described below, such as device structures, materials, dimensions, processing processes and techniques, to provide a clearer understanding of the present disclosure. However, as one skilled in the art will appreciate, the present disclosure may be practiced without these specific details.

Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present disclosure, but not to limit it; although the present disclosure has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that it can still be used Modifications are made to the technical solutions described in the foregoing embodiments, or equivalent substitutions are made to some or all of the technical features; however, these modifications or substitutions do not cause the essence of the corresponding technical solutions to depart from the scope of the technical solutions of the embodiments of the present disclosure.

Industrial applicability

The method, device and storage medium for locating defects in a semiconductor device provided by embodiments of the present disclosure convert the parameter information of the defects of the semiconductor device described in the first coordinate system of the defect detection and display system into corresponding data after corresponding processing. The second parameter information described in the graphics data system determines the defects of the semiconductor device based on the parameter information of the defects of the semiconductor device described in the second coordinate system, so as to quickly find and locate the defects of the semiconductor device directly through the second parameter information, thereby Provide accurate positioning information for defect scanning in semiconductor devices to online quality/quality data monitoring.

Claims (13)

A method for locating defects in semiconductor devices, the locating method includes: Obtain first parameter information of the defects of the semiconductor device described under the defect detection display system, where the first parameter information includes parameter information of the defects of the semiconductor device described under the first coordinate system of the defect detection display system; Convert the first parameter information into second parameter information described under the graphics data system; the second parameter information includes parameter information about defects of the semiconductor device described under the second coordinate system of the graphics data system , wherein the first coordinate system and the second coordinate system have a preset relationship; According to the second parameter information, the location of the defect of the semiconductor device in the graphics data system is determined. The method for locating defects in a semiconductor device according to claim 1, further comprising: According to the first coordinate system, the second coordinate system of the graphics data system is established according to preset rules. The method of locating defects in a semiconductor device according to claim 2, wherein, according to the first coordinate system, establishing the second coordinate system of the graphics data system according to preset rules includes: According to the origin of the first coordinate system and the position of the guide mark of the semiconductor device in the first coordinate system, it is determined that the origin of the second coordinate system and the guide mark of the semiconductor device are at the second coordinate position in the coordinate system and establish the second coordinate system. The method for locating defects in a semiconductor device according to any one of claims 1 to 3, wherein the second parameter information includes the first initial coordinate of the defect of the semiconductor device in the second coordinate system; Determining the location of the defect of the semiconductor device in the graphics data system according to the second parameter information includes: Perform first deviation compensation on the first initial coordinate to obtain the first compensated coordinate; After scaling the first compensated coordinates according to a first preset scaling ratio, the coordinates of the defects of the semiconductor device in the second coordinate system are obtained. The method of locating defects in a semiconductor device according to claim 4, wherein the first deviation compensation is performed on the first initial coordinate to obtain the first compensated coordinate, including: Based on the size of the alignment object mark, determine the size of the first deviation compensation; The first offset compensated size is removed from the first initial coordinate to obtain the first compensated coordinate. The method for locating defects in a semiconductor device according to claim 2 or 3, wherein, according to the first coordinate system, establishing the second coordinate system of the graphics data system according to preset rules includes: According to the origin of the first coordinate system and the position of the guide mark of the semiconductor device in the first coordinate system, it is determined that the origin of the second coordinate system and the guide mark of the semiconductor device are at the second coordinate position in the coordinate system and establish the second coordinate system; A second preset scaling ratio of the semiconductor device in the second coordinate system is set. The method of locating defects in a semiconductor device according to claim 6, wherein converting the first parameter information into second parameter information described under a graphics data system includes: The first parameter information is converted into second parameter information based on the second preset scaling ratio in the second coordinate system. The method of locating defects in a semiconductor device according to claim 7, wherein the second parameter information based on the second preset scaling ratio includes the defect position of the semiconductor device based on the second coordinate system. the second initial coordinates of the second preset scaling ratio; Determining the location of the defect of the semiconductor device in the graphics data system according to the second parameter information includes: Perform second deviation compensation on the second initial coordinate to obtain a second compensated coordinate; The second compensated coordinates are used as the coordinates of the defects of the semiconductor device in the second coordinate system. The method for locating defects in a semiconductor device according to claim 8, wherein the second deviation compensation is performed on the second initial coordinate to obtain the second compensated coordinate, including: Determine the size of the second deviation compensation based on the size of the alignment object mark scaled by the second preset scaling ratio; The second offset compensated size is removed from the second initial coordinate to obtain the second compensated coordinate. The method for locating defects in a semiconductor device according to any one of claims 1 to 9, wherein the first parameter information includes at least one of the following parameter information: an identification of a defect of the semiconductor device, a semiconductor device The coordinates of the defect, the size of the defect in the semiconductor device. A defect locating device in a semiconductor device, the locating device includes: An acquisition module configured to acquire the first parameter information of the defect of the semiconductor device described under the defect detection display system, where the first parameter information includes the semiconductor device described under the first coordinate system of the defect detection display system. Parameter information of the defect; A conversion module configured to convert the first parameter information into second parameter information described under a graphics data system; the second parameter information includes a semiconductor described under a second coordinate system of the graphics data system Parameter information of defects of the device, wherein the first coordinate system and the second coordinate system have a preset relationship; The determining module is configured to determine the location of the defect of the semiconductor device in the graphics data system according to the second parameter information. A defect positioning device in a semiconductor device, the positioning device includes: processor; Memory used to store instructions executable by the processor; Wherein, the processor is configured to perform the method of locating defects in a semiconductor device according to any one of claims 1-10. A computer-readable storage medium that, when instructions in the computer-readable storage medium are executed by a processor of a positioning device, enables the positioning device to perform the detection of defects in the semiconductor device according to any one of claims 1-10. Positioning method.

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