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WO2023032027A1 - Liquide de polissage, procédé de polissage, procédé de fabrication de composant semi-conducteur, et procédé de fabrication de corps lié - Google Patents

Liquide de polissage, procédé de polissage, procédé de fabrication de composant semi-conducteur, et procédé de fabrication de corps lié Download PDF

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Publication number
WO2023032027A1
WO2023032027A1 PCT/JP2021/031892 JP2021031892W WO2023032027A1 WO 2023032027 A1 WO2023032027 A1 WO 2023032027A1 JP 2021031892 W JP2021031892 W JP 2021031892W WO 2023032027 A1 WO2023032027 A1 WO 2023032027A1
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WO
WIPO (PCT)
Prior art keywords
mass
less
polishing
polishing liquid
polished
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2021/031892
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English (en)
Japanese (ja)
Inventor
彰吾 荒田
康裕 市毛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Resonac Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Resonac Corp filed Critical Resonac Corp
Priority to PCT/JP2021/031892 priority Critical patent/WO2023032027A1/fr
Priority to EP22864510.7A priority patent/EP4339254A4/fr
Priority to KR1020247002680A priority patent/KR20240024995A/ko
Priority to PCT/JP2022/032453 priority patent/WO2023032930A1/fr
Priority to US18/569,943 priority patent/US20240282581A1/en
Priority to JP2023545570A priority patent/JP7750295B2/ja
Priority to EP22864512.3A priority patent/EP4379780A4/fr
Priority to JP2023545569A priority patent/JP7718493B2/ja
Priority to PCT/JP2022/032451 priority patent/WO2023032928A1/fr
Priority to EP22864511.5A priority patent/EP4379779A4/fr
Priority to US18/686,053 priority patent/US20250187137A1/en
Priority to PCT/JP2022/032452 priority patent/WO2023032929A1/fr
Priority to US18/686,043 priority patent/US20240392162A1/en
Priority to KR1020237043099A priority patent/KR20240006690A/ko
Priority to KR1020247002677A priority patent/KR20240024994A/ko
Priority to JP2023545568A priority patent/JP7729388B2/ja
Priority to TW111132870A priority patent/TW202317733A/zh
Publication of WO2023032027A1 publication Critical patent/WO2023032027A1/fr
Anticipated expiration legal-status Critical
Priority to JP2025132417A priority patent/JP2025159069A/ja
Priority to JP2025145114A priority patent/JP2025174985A/ja
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H10P52/00—

Definitions

  • the present disclosure relates to a polishing liquid, a polishing method, a semiconductor component manufacturing method, a bonded body manufacturing method, and the like.
  • CMP Chemical Mechanical Polishing
  • STI shallow trench isolation
  • premetal insulating material or interlayer It is an essential technology for flattening insulating materials, forming plugs or embedded metal wiring, and the like.
  • a polishing liquid used for CMP a polishing liquid containing abrasive grains containing cerium oxide is known (see, for example, Patent Documents 1 and 2 below).
  • JP-A-10-106994 Japanese Patent Application Laid-Open No. 08-022970
  • polishing liquid that can be used for CMP
  • it is required to remove resin-containing members to be polished quickly by polishing Such a polishing liquid is required to improve the polishing rate of a member to be polished containing a resin.
  • An object of one aspect of the present disclosure is to provide a polishing liquid capable of improving the polishing rate of a member to be polished containing resin. Another aspect of the present disclosure aims to provide a polishing method using the polishing liquid. Another aspect of the present disclosure aims to provide a method for manufacturing a semiconductor component using the polishing method. Another aspect of the present disclosure aims to provide a bonded body manufacturing method using the polishing method or the semiconductor component manufacturing method.
  • One aspect of the present disclosure provides a resin-containing polishing liquid for polishing a member to be polished, which contains abrasive grains containing cerium oxide and an ether compound having a hydroxy group.
  • Another aspect of the present disclosure provides a polishing method for polishing a resin-containing member to be polished using the polishing liquid described above.
  • Another aspect of the present disclosure provides a method for manufacturing a semiconductor component, which obtains a semiconductor component by singulating the member to be polished that has been polished by the above-described polishing method.
  • Another aspect of the present disclosure is a bonding surface of a member to be polished polished by the above-described polishing method, or a bonding surface of a semiconductor component obtained by the above-described method for manufacturing a semiconductor component, and a bonding surface of the object to be bonded.
  • a polishing liquid capable of improving the polishing rate of a member to be polished containing resin.
  • a polishing method using the polishing liquid it is possible to provide a method of manufacturing a semiconductor component using the polishing method.
  • a numerical range indicated using “-” indicates a range that includes the numerical values before and after "-" as the minimum and maximum values, respectively.
  • “A or more” in a numerical range means A and a range exceeding A.
  • “A or less” in a numerical range means A and a range less than A.
  • the upper limit value or lower limit value of the numerical range in one step can be arbitrarily combined with the upper limit value or lower limit of the numerical range in another step.
  • the upper or lower limits of the numerical ranges may be replaced with the values shown in the examples.
  • “A or B” may include either A or B, or may include both.
  • each component in the composition means the total amount of the plurality of substances present in the composition unless otherwise specified when there are multiple substances corresponding to each component in the composition.
  • An “alkyl group” may be linear, branched or cyclic, unless otherwise specified.
  • “Abrasive grain” means an aggregate of a plurality of grains, but for the sake of convenience, one grain that constitutes the abrasive grain may be called an abrasive grain.
  • the polishing liquid according to the present embodiment is a resin-containing member to be polished containing abrasive grains containing cerium oxide and an ether compound having a hydroxy group (hereinafter sometimes referred to as "ether compound A").
  • ether compound A an ether compound having a hydroxy group
  • a polishing liquid for polishing The polishing liquid according to this embodiment can be used as a CMP polishing liquid.
  • the polishing liquid according to the present embodiment it is possible to improve the polishing rate of a member to be polished containing a resin, and the polishing rate exceeds 0.40 ⁇ m/min in the evaluation method described in Examples below.
  • resins include epoxy resins, phenolic resins, acrylic resins, methacrylic resins, novolac resins, polyester resins (e.g., unsaturated polyester resins), polyimide resins, polyamideimide resins, polybenzoxazole (PBO), polyallyl ether resins, heterocyclic resins. Contained resins (excluding the resins exemplified above) and the like can be mentioned.
  • heterocyclic ring-containing resin examples include pyrrole ring-containing resins, pyridine ring-containing resins, imidazole ring-containing resins, and the like.
  • the reason why the polishing rate of the member to be polished containing resin is improved is not necessarily clear, but the present inventor presumes that it is as follows. That is, by using an ether compound having a hydroxy group (ether compound A), the wettability of the surface to be polished on which the resin is present is improved.
  • ether compound A an ether compound having a hydroxy group
  • the abrasive grains containing cerium oxide are relatively soft, the abrasive grains can efficiently enter the inside of the resin without slipping on the resin surface. It is presumed that these improve the polishing rate of the member to be polished containing the resin.
  • the factor for obtaining the effect is not limited to the content.
  • Metals include copper, cobalt, tantalum, aluminum, titanium, tungsten and the like.
  • the polishing liquid containing resin and metal is used for polishing a member to be polished containing resin (for example, epoxy resin) and metal (for example, copper). It is possible to improve the polishing rate of the member to be polished.
  • the above-mentioned sealing material contains particles containing a silicon compound (compound containing silicon; may exist.
  • the polishing liquid used for polishing a member to be polished containing a resin (eg, epoxy resin) and a silicon compound (eg, silicon oxide) contains resin and a silicon compound-containing member to be polished can be improved. and metal portions (vias) disposed in the openings extending in the thickness direction of the material portion and containing metal. can be made With such a polishing liquid, it is possible to suitably smoothen the above-mentioned bonding surfaces on which resins, silicon compounds and metals are present.
  • FIG. 1 is a cross-sectional view schematically showing an example of a member to be polished, showing a cross section parallel to the surface to be polished.
  • the member 10 to be polished shown in FIG. contains particles 12b containing However, the size and number of each member (particle 12b, metal portion 14, etc.), the size ratio between members, and the like are not limited to the illustrated contents.
  • Silicon compounds include silicon oxides (eg, SiO 2 ), SiOC, silicon nitrides (eg, SiN), and the like.
  • the diameter of the particles may be 0.01 to 100 ⁇ m, and the ratio of the area occupied by the particles (reference: the entire cross section) is 1 to 99. %.
  • the cross-sectional shape of the metal portion perpendicular to the thickness direction of the substrate portion may be circular, and the diameter of the metal portion may be 1 to 200 ⁇ m.
  • the spacing between adjacent vias may be 1-200 ⁇ m.
  • the polishing liquid according to this embodiment contains abrasive grains containing cerium oxide.
  • abrasive grains containing cerium oxide By using abrasive grains containing cerium oxide, it is possible to improve the polishing speed of a member to be polished containing a resin, and it is easy to improve the polishing speed of a member to be polished containing a resin and a silicon compound.
  • Abrasive grains may comprise one or more types of particles. Inorganic materials such as silica (SiO 2 ), alumina, zirconia, titania, germania, silicon carbide, etc., can be cited as constituent materials of abrasive grains other than cerium oxide.
  • the polishing liquid according to this embodiment may not contain alumina as abrasive grains. The content of alumina is 0.1% by mass or less, less than 0.1% by mass, 0.01% by mass or less, 0.001% by mass or less, or substantially 0% by mass, based on the total mass of the polishing liquid.
  • the content of cerium oxide in the abrasive grains is the entire abrasive grains (whole abrasive grains contained in the polishing liquid, or 90 mass% or more, 93 mass% or more, 95 mass% or more, more than 95 mass%, 98 mass% or more, 99 mass% or more, 99.5 mass% or more, or 99.9% by mass or more.
  • the abrasive grains may be in an aspect in which the abrasive grains are substantially made of cerium oxide (an aspect in which substantially 100 mass % of the abrasive grains are cerium oxide).
  • the average particle diameters D50 and D80 of the abrasive grains may be within the following ranges from the viewpoint of easily improving the polishing speed of the member to be polished containing resin and the polishing speed of metal.
  • the average particle diameters D50 and D80 of the abrasive grains mean the 50% and 80% particle diameters of the volume-based cumulative distribution, and can be measured by, for example, a laser diffraction particle size distribution meter.
  • the average grain size of abrasive grains can be measured, for example, with a laser diffraction grain size distribution meter.
  • the average particle size of the abrasive grains can be adjusted by natural sedimentation, pulverization, dispersion, filtration, etc. For example, the particle size adjustment may be performed after mixing the components of the polishing liquid.
  • the average grain size D50 of the abrasive grains may be 10 nm or more, 50 nm or more, 100 nm or more, 150 nm or more, 200 nm or more, 250 nm or more, 300 nm or more, 320 nm or more, or 340 nm or more.
  • the average grain size D50 of the abrasive grains may be 1000 nm or less, 800 nm or less, 600 nm or less, 500 nm or less, 450 nm or less, 400 nm or less, or 350 nm or less. From these points of view, the average grain size D50 of the abrasive grains may be 10 to 1000 nm.
  • the average grain size D80 of the abrasive grains may be 50 nm or more, 100 nm or more, 200 nm or more, 300 nm or more, 350 nm or more, 400 nm or more, 450 nm or more, 500 nm or more, 550 nm or more, or 600 nm or more.
  • the average grain size D80 of the abrasive grains may be 1200 nm or less, 1100 nm or less, 1000 nm or less, 900 nm or less, 800 nm or less, 750 nm or less, 700 nm or less, or 650 nm or less. From these points of view, the average grain size D80 of the abrasive grains may be 50 to 1200 nm.
  • the content of the abrasive grains may be within the following range based on the total mass of the polishing liquid, from the viewpoint of easily improving the polishing speed of the member to be polished containing resin and the polishing speed of metal.
  • the content of abrasive grains is 0.01% by mass or more, 0.05% by mass or more, 0.1% by mass or more, 0.3% by mass or more, 0.5% by mass or more, 0.7% by mass or more, 0 0.8% by mass or more, 0.9% by mass or more, or 1% by mass or more.
  • the abrasive content may be 10% by mass or less, 8% by mass or less, 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, or 1% by mass or less. From these points of view, the content of abrasive grains may be 0.01 to 10% by mass, 0.1 to 5% by mass, or 0.5 to 2% by mass.
  • the polishing liquid according to this embodiment contains an ether compound (ether compound A) having a hydroxy group.
  • An ether compound having a hydroxy group is a compound having at least one hydroxy group and at least one ether group.
  • the “ether group” in the ether compound A does not include the “—O—” structure in a hydroxy group (hydroxyl group), carboxyl group, carboxylic acid group, ester group, sulfo group and phosphoric acid group. Hydroxy groups do not include OH groups contained in carboxy groups, ester groups, sulfo groups and phosphate groups.
  • the ether compound A may contain a compound having an ether group that bonds carbon atoms, from the viewpoint of easily improving the polishing speed of a member to be polished containing a resin and the polishing speed of a metal.
  • the ether compound A may contain a compound having the number of hydroxy groups within the following range from the viewpoint of easily improving the polishing rate of a member to be polished containing a resin and the polishing rate of a metal.
  • the number of hydroxy groups is 1 or more, and may be 2 or more, 3 or more, 4 or more, 5 or more, 6 or more, 8 or more, 9 or more, 10 or more, 11 or more, or 12 or more.
  • the number of hydroxy groups may be 20 or less, 15 or less, 12 or less, 11 or less, 10 or less, 9 or less, 8 or less, 6 or less, 5 or less, 4 or less, 3 or less, or 2 or less. From these points of view, the number of hydroxy groups may be from 1 to 20.
  • the ether compound A is a combination of a compound having one hydroxy group and a compound having two or more hydroxy groups, from the viewpoint of easily improving the polishing rate of a member to be polished containing a resin and the polishing rate of a metal. may contain.
  • the ether compound A may contain a compound having the number of ether groups within the following range from the viewpoint of easily improving the polishing rate of the member to be polished containing resin and the polishing rate of metal.
  • the number of ether groups is 1 or more, and may be 2 or more, 3 or more, 4 or more, 5 or more, 6 or more, 8 or more, or 9 or more.
  • the number of ether groups may be 20 or less, 15 or less, 12 or less, 11 or less, 10 or less, 9 or less, 8 or less, 6 or less, 5 or less, 4 or less, 3 or less, or 2 or less. From these points of view, the number of ether groups may be from 1 to 20.
  • the ether compound A is a compound having one ether group and a compound having two or more ether groups, from the viewpoint of easily improving the polishing rate of a member to be polished containing a resin and the polishing rate of a metal. may contain.
  • the ether compound A may contain an alkoxy alcohol from the viewpoint of easily improving the polishing speed of the member to be polished containing resin and the polishing speed of metal.
  • Alkoxy alcohols include 2-methoxyethanol, 2-ethoxyethanol, 2-(2-methoxy)ethoxyethanol, 2-(2-butoxyethoxy)ethanol, 2-propoxyethanol, 2-butoxyethanol, 3-methoxy-3 -methyl-1-butanol, 2-(methoxymethoxy)ethanol, 2-isopropoxyethanol, 2-butoxyethanol, 2-isopentyloxyethanol, 1-propoxy-2-propanol, 3-methoxy-3-methyl-1 -butanol, 3-methoxy-1-butanol, 3-methoxy-3-methylbutanol, 1-methoxy-2-butanol, glycol monoether and the like.
  • the alkoxy alcohol has 1 to 5, 1 to 4, 1 to 3, 1 to 2, or 2 carbon atoms from the viewpoint of easily improving the polishing speed of the member to be polished containing resin and the polishing speed of metal. It may include compounds with ⁇ 3 alkoxy groups. Alkoxy alcohols may include 1-propoxy-2-propanol, 3-methoxy-3-methyl-1- May contain butanol.
  • the ether compound A may contain a polyether, and may contain an alkoxy alcohol and a polyether, from the viewpoint of easily improving the polishing speed of a member to be polished containing a resin and the polishing speed of a metal.
  • Polyethers include polyglycerin, polysaccharides, polyalkylene glycol, polyoxypropylene polyglyceryl ether, polyoxyethylene polyglyceryl ether, 1,4-di(2-hydroxyethoxy)benzene, 2,2-bis(4-polyoxy ethyleneoxyphenyl)propane, 2,2-bis(4-polyoxypropyleneoxyphenyl)propane, ethylene glycol monophenyl ether, diethylene glycol monophenyl ether, polyoxyalkylene monophenyl ether, propylene glycol monophenyl ether, polyoxypropylene monomethyl Phenyl ether, polyethylene glycol monomethyl ether, pentaerythritol polyoxyethylene ether, ethylene glycol monoally
  • the ether compound A may contain polyglycerin having an average degree of polymerization of glycerin in the following range from the viewpoint of easily improving the polishing rate of the member to be polished containing resin and the polishing rate of metal.
  • the average degree of polymerization may be 3 or more, 4 or more, 5 or more, 8 or more, or 10 or more.
  • the average degree of polymerization may be 100 or less, 50 or less, 30 or less, 20 or less, 15 or less, 12 or less, or 10 or less. From these points of view, the average degree of polymerization may be 3-100.
  • the ether compound A may contain polyglycerin having a hydroxyl value in the following range from the viewpoint of easily improving the polishing speed of a member to be polished containing resin and the polishing speed of metal.
  • the hydroxyl value may be 100 or higher, 200 or higher, 300 or higher, 400 or higher, 500 or higher, 600 or higher, 700 or higher, 800 or higher, 850 or higher, or 870 or higher.
  • the hydroxyl value may be 2000 or less, 1500 or less, 1200 or less, 1100 or less, 1000 or less, 950 or less, 930 or less, or 910 or less. From these points of view, the hydroxyl value may range from 100 to 2,000.
  • the ether compound A may contain a compound having one hydroxy group and one ether group from the viewpoint of easily improving the polishing rate of the member to be polished containing resin and the polishing rate of metal.
  • the ether compound A bonds an alkyl group having a hydroxy group as a substituent and an unsubstituted alkyl group from the viewpoint of easily improving the polishing rate of a member to be polished containing a resin and the polishing rate of a metal. It may include compounds with ether groups, which may be compounds with one hydroxy group and one ether group.
  • the ether compound A may contain compounds having the following molecular weights, from the viewpoint of easily improving the polishing speed of the member to be polished containing resin and the polishing speed of metal.
  • the molecular weight may be 50 or greater, 80 or greater, 100 or greater, 110 or greater, 115 or greater, 118 or greater, 120 or greater, 150 or greater, 200 or greater, 200 or greater, 300 or greater, 500 or greater, 700 or greater, or 750 or greater.
  • the molecular weight may be 3000 or less, 2000 or less, 1500 or less, 1200 or less, 1000 or less, 800 or less, 750 or less, 700 or less, 500 or less, 300 or less, 200 or less, less than 200, 150 or less, or 120 or less. . From these points of view, the molecular weight may be 50-3000.
  • Ether compounds A may include, for example, alkoxy alcohols with a molecular weight of less than 200.
  • the weight average molecular weight may be used as the above molecular weight.
  • the weight average molecular weight can be measured under the following conditions using, for example, gel permeation chromatography (GPC: Gel Permeation Chromatography).
  • the content of alkoxy alcohol is the total mass of ether compounds (total mass of ether compounds contained in the polishing liquid), or , the total mass of the ether compound A (total mass of the ether compound A contained in the polishing liquid) as a reference, it may be in the following range.
  • the content of the alkoxy alcohol is 5% by mass or more, 8% by mass or more, 10% by mass or more, 12% by mass or more, 15% by mass or more, 18% by mass or more, 20% by mass or more, or 23% by mass or more. you can
  • the content of alkoxy alcohol may be 25% by mass or more, 30% by mass or more, 35% by mass or more, or 40% by mass or more.
  • the content of alkoxy alcohol is 95% by mass or less, 90% by mass or less, 85% by mass or less, 80% by mass or less, 75% by mass or less, 70% by mass or less, 65% by mass or less, 60% by mass or less, 55% by mass. 50% by mass or less, 45% by mass or less, 40% by mass or less, 35% by mass or less, 30% by mass or less, or 25% by mass or less. From these points of view, the content of alkoxy alcohol may be 5 to 95% by mass.
  • Content A as the content of polyether or the content of polyglycerin is the total mass of ether compounds (the total mass of ether compounds contained in the polishing liquid) or the total mass of ether compounds A (the total mass of ether compounds contained in the polishing liquid).
  • the total mass of compound A) may be in the following ranges.
  • the content A is 5% by mass or more, 10% by mass or more, 15% by mass or more, 20% by mass or more, 25% by mass or more, from the viewpoint of easily improving the polishing rate of the member to be polished containing resin and the polishing rate of metal.
  • the content A is 95% by mass or less, 92% by mass or less, 90% by mass or less, 88% by mass or less, 85% by mass or less, from the viewpoint of easily improving the polishing rate of the member to be polished containing resin and the polishing rate of metal. % by mass or less, 82% by mass or less, 80% by mass or less, or 77% by mass or less.
  • the content A may be 75% by mass or less, 70% by mass or less, 65% by mass or less, or 60% by mass or less. From these points of view, the content A may be 5 to 95% by mass.
  • the content of the ether compound A may be within the following range based on the total mass of the polishing liquid.
  • the content of the ether compound A is 0.1% by mass or more, 0.3% by mass or more, and 0.5% by mass or more, from the viewpoint of easily improving the polishing rate of a member to be polished containing a resin and the polishing rate of a metal. % or more, 0.8 mass % or more, 1 mass % or more, 1 mass % or more, 1.1 mass % or more, 1.2 mass % or more, or 1.3 mass % or more.
  • the content of the ether compound A may be 1.4% by mass or more, 1.5% by mass or more, or 1.6% by mass or more.
  • the content of the ether compound A is 10% by mass or less, 8% by mass or less, 5% by mass or less, and 3% by mass, from the viewpoint of easily improving the polishing rate of a member to be polished containing a resin and the polishing rate of a metal. 2% by mass or less, 1.8% by mass or less, 1.7% by mass or less, 1.6% by mass or less, 1.5% by mass or less, or 1.4% by mass or less. From these viewpoints, the content of the ether compound A may be 0.1 to 10% by mass, 0.5 to 5% by mass, or 1 to 3% by mass.
  • the content of alkoxy alcohol may be within the following range based on the total mass of the polishing liquid.
  • the content of the alkoxy alcohol is 0.01% by mass or more, 0.03% by mass or more, and 0.05% by mass, from the viewpoint of easily improving the polishing rate of the member to be polished containing the resin and the polishing rate of the metal. 0.08% by mass or more, 0.1% by mass or more, 0.15% by mass or more, 0.2% by mass or more, 0.25% by mass or more, or 0.3% by mass or more.
  • the content of the alkoxy alcohol is 0.35% by mass or more, 0.4% by mass or more, 0.45% by mass or more, 0.5% by mass or more, 0.55% by mass or more, 0.6% by mass or more, or , 0.65% by mass or more.
  • the content of the alkoxy alcohol is 5% by mass or less, 3% by mass or less, 1% by mass or less, and 0.8% by mass, from the viewpoint of easily improving the polishing rate of the member to be polished containing resin and the polishing rate of metal.
  • the content of alkoxy alcohol may be 0.01 to 5% by mass, 0.1 to 1% by mass, or 0.2 to 0.8% by mass.
  • the content B as the content of polyether or the content of polyglycerin is the following based on the total mass of the polishing liquid, from the viewpoint of easily improving the polishing rate of the member to be polished containing resin and the polishing rate of metal.
  • may be in the range of Content B is 0.01% by mass or more, 0.05% by mass or more, 0.1% by mass or more, 0.3% by mass or more, 0.5% by mass or more, 0.6% by mass or more, 0.8 % by mass or more, 0.9% by mass or more, or 1% by mass or more.
  • Content B is 10% by mass or less, 8% by mass or less, 7% by mass or less, 6% by mass or less, 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, 1.5% by mass or less, or 1% by mass or less. From these points of view, the content B may be 0.01 to 10% by mass, 0.1 to 5% by mass, or 0.5 to 3% by mass.
  • the content of the ether compound A may be within the following range with respect to 100 parts by mass of the abrasive grains.
  • the content of the ether compound A is 10 parts by mass or more, 30 parts by mass or more, 50 parts by mass or more, and 80 parts by mass from the viewpoint of easily improving the polishing rate of the member to be polished containing resin and the polishing rate of metal. Above, it may be 100 parts by mass or more, more than 100 parts by mass, 110 parts by mass or more, 120 parts by mass or more, or 130 parts by mass or more.
  • the content of the ether compound A may be 140 parts by mass or more, 150 parts by mass or more, or 160 parts by mass or more.
  • the content of the ether compound A is 1000 parts by mass or less, 800 parts by mass or less, 500 parts by mass or less, and 300 parts by mass from the viewpoint of easily improving the polishing rate of the member to be polished containing resin and the polishing rate of metal. 200 parts by mass or less, 180 parts by mass or less, 170 parts by mass or less, 160 parts by mass or less, 150 parts by mass or less, or 140 parts by mass or less. From these points of view, the content of the ether compound A may be 10 to 1000 parts by mass.
  • the content of alkoxy alcohol may be within the following range with respect to 100 parts by mass of abrasive grains.
  • the content of the alkoxy alcohol is 1 part by mass or more, 3 parts by mass or more, 5 parts by mass or more, or 8 parts by mass or more from the viewpoint of easily improving the polishing rate of the member to be polished containing resin and the polishing rate of metal. , 10 parts by mass or more, 15 parts by mass or more, 20 parts by mass or more, 25 parts by mass or more, or 30 parts by mass or more.
  • the content of the alkoxy alcohol may be 35 parts by mass or more, 40 parts by mass or more, 45 parts by mass or more, 50 parts by mass or more, 55 parts by mass or more, 60 parts by mass or more, or 65 parts by mass or more.
  • the content of the alkoxy alcohol is 500 parts by mass or less, 300 parts by mass or less, 100 parts by mass or less, or 80 parts by mass or less from the viewpoint of easily improving the polishing rate of the member to be polished containing resin and the polishing rate of metal. , 70 parts by mass or less, 65 parts by mass or less, 60 parts by mass or less, 55 parts by mass or less, 50 parts by mass or less, 45 parts by mass or less, 40 parts by mass or less, or 35 parts by mass or less. From these points of view, the content of alkoxy alcohol may be 1 to 500 parts by mass.
  • the content C as the content of polyether or the content of polyglycerin is as follows with respect to 100 parts by mass of abrasive grains, from the viewpoint of easily improving the polishing speed of a member to be polished containing resin and the polishing speed of metal. may be in the range of Content C is 1 part by mass or more, 5 parts by mass or more, 10 parts by mass or more, 30 parts by mass or more, 50 parts by mass or more, 60 parts by mass or more, 80 parts by mass or more, 90 parts by mass or more, or 100 parts by mass or more.
  • the content C is 1000 parts by mass or less, 800 parts by mass or less, 700 parts by mass or less, 600 parts by mass or less, 500 parts by mass or less, 400 parts by mass or less, 300 parts by mass or less, 200 parts by mass or less, 150 parts by mass or less, Alternatively, it may be 100 parts by mass or less. From these points of view, the content C may be 1 to 1000 parts by mass.
  • the content of the alkoxy alcohol may be within the following range with respect to 100 parts by mass of polyether or 100 parts by mass of polyglycerin.
  • the content of the alkoxy alcohol is 1 part by mass or more, 3 parts by mass or more, 5 parts by mass or more, or 8 parts by mass or more from the viewpoint of easily improving the polishing rate of the member to be polished containing resin and the polishing rate of metal. , 10 parts by mass or more, 15 parts by mass or more, 20 parts by mass or more, 25 parts by mass or more, or 30 parts by mass or more.
  • the content of the alkoxy alcohol may be 35 parts by mass or more, 40 parts by mass or more, 45 parts by mass or more, 50 parts by mass or more, 55 parts by mass or more, 60 parts by mass or more, or 65 parts by mass or more.
  • the content of the alkoxy alcohol is 1000 parts by mass or less, 800 parts by mass or less, 700 parts by mass or less, or 600 parts by mass or less from the viewpoint of easily improving the polishing rate of the member to be polished containing resin and the polishing rate of metal.
  • the content of the alkoxy alcohol may be 1 to 1000 parts by mass.
  • the polishing liquid according to this embodiment may contain water. Water may be contained as the remainder after removing other constituents from the polishing liquid.
  • the content of water may be within the following ranges based on the total mass of the polishing liquid.
  • the water content is 90% by mass or more, 91% by mass or more, 92% by mass or more, 93% by mass or more, 94% by mass or more, 94.5% by mass or more, 95% by mass or more, 95.5% by mass or more, Alternatively, it may be 96% by mass or more.
  • the water content may be less than 100 wt%, 99 wt% or less, 98 wt% or less, 97 wt% or less, 96 wt% or less, or 95.5 wt% or less. From these points of view, the content of water may be 90% by mass or more and less than 100% by mass.
  • the polishing liquid according to this embodiment may contain components other than abrasive grains, ether compound A, and water.
  • examples of such components include ether compounds having no hydroxy group, acid components, ammonia, anticorrosive agents, basic hydroxides, surfactants, antifoaming agents, and the like.
  • the polishing liquid according to this embodiment may not contain at least one of these components.
  • the polishing liquid according to this embodiment may contain an acid component. It is presumed that the acid component forms a complex with the metal, the acid component dissolves the metal, and the like, thereby increasing the polishing rate of the metal.
  • the polishing liquid according to the present embodiment may contain an organic acid component or an inorganic acid component as the acid component.
  • Organic acid components include organic acids (excluding amino acids), organic acid esters, organic acid salts, amino acids, and the like.
  • Organic acids include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, 2-methylbutyric acid, n-hexanoic acid, 3,3-dimethylbutyric acid, 2-ethylbutyric acid, 4-methylpentanoic acid, n-heptanoic acid, 2-methylhexanoic acid, n-octanoic acid, 2-ethylhexanoic acid, benzoic acid, glycolic acid, salicylic acid, glyceric acid, oxalic acid, malonic acid, succinic acid, 3-methylphthalic acid, 4-methylphthalic acid, 3-aminophthalic acid acid, 4-aminophthalic acid, 3-nitrophthalic acid, 4-nitrophthalic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, phthalic acid, isophthalic acid
  • organic acid esters include esters of the above-described organic acids.
  • organic acid salts include ammonium salts, alkali metal salts, alkaline earth metal salts and halides of the above organic acids.
  • Amino acids include alanine, arginine, asparagine, aspartic acid, cysteine, glutamine, glutamic acid, glycine, histidine, isoleucine, leucine, lysine, methionine, phenylalanine, proline, serine, threonine, tryptophan, tyrosine, valine, and the like.
  • inorganic acid components include inorganic acids, ammonium salts of inorganic acids, and chromic acid.
  • inorganic acids include hydrochloric acid, sulfuric acid, nitric acid and the like.
  • ammonium salts of inorganic acids include ammonium salts of monovalent inorganic acids such as ammonium nitrate, ammonium chloride and ammonium bromide; ammonium salts of divalent inorganic acids such as ammonium carbonate, ammonium sulfate and ammonium persulfate; ammonium salts of trivalent inorganic acids such as ammonium acid;
  • the organic acid component may contain at least one selected from the group consisting of organic acids different from amino acids and amino acids, and is selected from the group consisting of malic acid and glycine, from the viewpoint of further improving the polishing rate of metals. At least one kind may be included.
  • the inorganic acid component may contain at least one selected from the group consisting of ammonium carbonate and ammonium persulfate from the viewpoint of further improving the polishing rate of metal.
  • the content of the acid component may be within the following ranges based on the total mass of the polishing liquid.
  • the content of the acid component is 0.01% by mass or more, 0.05% by mass or more, 0.1% by mass or more, 0.2% by mass or more, and 0.3% by mass from the viewpoint of easily improving the polishing rate of the metal. % or more, 0.4% by mass or more, 0.5% by mass or more, 0.6% by mass or more, 0.7% by mass or more, 0.8% by mass or more, 0.9% by mass or more, 1% by mass or more, It may be 1.1% by mass or more, 1.2% by mass or more, 1.3% by mass or more, 1.4% by mass or more, 1.5% by mass or more, or 1.6% by mass or more.
  • the content of the acid component is 5% by mass or less, 4.5% by mass or less, 4% by mass or less, 3.5% by mass or less, 3% by mass or less, 2.5% by mass or less, from the viewpoint of easily improving the polishing rate of the metal. % by mass or less, 2% by mass or less, 1.9% by mass or less, 1.8% by mass or less, or 1.7% by mass or less.
  • the content of the acid component may be 1.6% by mass or less, 1.5% by mass or less, 1.4% by mass or less, or 1.3% by mass or less. From these points of view, the content of the acid component may be 0.01 to 5% by mass.
  • the content of the organic acid component may be within the following range based on the total mass of the polishing liquid, from the viewpoint of easily improving the polishing rate of metal.
  • the content of the organic acid component is 0.01% by mass or more, 0.05% by mass or more, 0.1% by mass or more, 0.15% by mass or more, 0.2% by mass or more, 0.25% by mass or more, It may be 0.3% by mass or more, 0.35% by mass or more, 0.4% by mass or more, or 0.41% by mass or more.
  • the content of the organic acid component is 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, 1% by mass or less, 0.8% by mass or less, 0.6% by mass or less, and 0.5% by mass. % by mass or less, 0.45 mass % or less, or 0.41 mass % or less. From these points of view, the content of the organic acid component may be 0.01 to 5% by mass.
  • the content of the inorganic acid component may be within the following ranges based on the total mass of the polishing liquid.
  • the content of the inorganic acid component is 0.01% by mass or more, 0.05% by mass or more, 0.1% by mass or more, 0.2% by mass or more, and 0.3% by mass or more, from the viewpoint of easily improving the polishing rate of the metal. % by mass or more, 0.4% by mass or more, 0.5% by mass or more, 0.6% by mass or more, 0.7% by mass or more, 0.8% by mass or more, 0.9% by mass or more, 1% by mass or more , 1.1% by mass or more, or 1.2% by mass or more.
  • the content of the inorganic acid component is 5% by mass or less, 4.5% by mass or less, 4% by mass or less, 3.5% by mass or less, 3% by mass or less, from the viewpoint of easily improving the metal polishing rate. 5% by mass or less, 2% by mass or less, 1.8% by mass or less, 1.6% by mass or less, 1.5% by mass or less, 1.4% by mass or less, or 1.3% by mass or less .
  • the content of the inorganic acid component may be 1.2% by mass or less, 1.1% by mass or less, 1% by mass or less, 0.9% by mass or less, or 0.8% by mass or less. From these points of view, the content of the inorganic acid component may be 0.01 to 5% by mass.
  • the polishing liquid according to this embodiment may contain ammonia. It is presumed that ammonia forms a complex with the metal, and the polishing rate of the metal is likely to be improved.
  • the polishing liquid according to the present embodiment may contain at least one selected from the group consisting of ammonium cations and ammonia from the viewpoint of further improving the polishing rate of metals, and may contain an ammonium salt (for example, ammonium of the inorganic acid described above). salt) and at least one selected from the group consisting of ammonia.
  • the content of ammonia may be within the following range based on the total mass of the polishing liquid, from the viewpoint of easily improving the polishing rate of metal.
  • the content of ammonia is 0.01% by mass or more, 0.03% by mass or more, 0.05% by mass or more, 0.08% by mass or more, 0.1% by mass or more, 0.12% by mass or more, or It may be 0.15% by mass or more.
  • the content of ammonia is 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, 1% by mass or less, 0.8% by mass or less, 0.5% by mass or less, and 0.3% by mass. Below, it may be 0.2 mass % or less, or 0.15 mass % or less. From these points of view, the content of ammonia may be 0.01 to 5% by mass.
  • the polishing liquid according to the present embodiment may contain an anticorrosive agent (anticorrosive agent for metal) as a compound having an anticorrosive action on metal.
  • an anticorrosive agent antioxidant for metal
  • the anticorrosive suppresses the etching of the metal and tends to reduce the roughness of the surface to be polished.
  • the anticorrosive agent may contain at least one selected from the group consisting of triazole compounds, pyridine compounds, pyrazole compounds, pyrimidine compounds, imidazole compounds, guanidine compounds, thiazole compounds, tetrazole compounds, triazine compounds and hexamethylenetetramine.
  • a "compound” is a general term for compounds having the skeleton thereof, and for example, a "triazole compound” means a compound having a triazole skeleton.
  • the anticorrosion agent may contain a triazole compound from the viewpoint of easily obtaining a suitable anticorrosion action.
  • Triazole compounds include 1,2,3-triazole, 1,2,4-triazole, 3-amino-1H-1,2,4-triazole, benzotriazole, 1-hydroxybenzotriazole, and 1-dihydroxypropylbenzotriazole.
  • 2,3-dicarboxypropylbenzotriazole 4-hydroxybenzotriazole, 4-carboxy-1H-benzotriazole, 4-carboxy-1H-benzotriazole methyl ester (methyl 1H-benzotriazole-4-carboxylate), 4 -Carboxy-1H-benzotriazole butyl ester (1H-benzotriazole-4-carboxylate butyl), 4-carboxy-1H-benzotriazole octyl ester (1H-benzotriazole-4-carboxylate octyl), 5-hexylbenzotriazole , [1,2,3-benzotriazolyl-1-methyl][1,2,4-triazolyl-1-methyl][2-ethylhexyl]amine, tolyltriazole, naphthotriazole, bis[(1-benzotriazole solyl)methyl]phosphonic acid, 3H-1,2,3-triazolo[4,5-b]pyr
  • a compound having a triazole skeleton and other skeletons in one molecule is classified as a triazole compound.
  • the polishing liquid according to the present embodiment may contain a triazole compound having a hydroxy group, and may contain 1-hydroxybenzotriazole, from the viewpoint of easily obtaining a suitable anticorrosion action.
  • the content of the anticorrosive agent may be within the following range based on the total mass of the polishing liquid, from the viewpoint of easily obtaining a suitable anticorrosive action.
  • the content of the anticorrosive agent is 0.001% by mass or more, 0.003% by mass or more, 0.005% by mass or more, 0.008% by mass or more, 0.01% by mass or more, 0.02% by mass or more, 0 0.025% by mass or more, or 0.03% by mass or more.
  • the content of the anticorrosive agent is 1% by mass or less, 0.5% by mass or less, 0.3% by mass or less, 0.1% by mass or less, 0.08% by mass or less, 0.05% by mass or less, and 0.04% by mass. % by mass or less, 0.03% by mass or less, or 0.025% by mass or less. From these points of view, the content of the anticorrosive agent may be 0.001 to 1% by mass.
  • the polishing liquid according to this embodiment may contain a basic hydroxide.
  • a basic hydroxide By using a basic hydroxide, the metal polishing rate is likely to be improved.
  • Basic hydroxides include alkali metal hydroxides such as sodium hydroxide and potassium hydroxide; alkaline earth metal hydroxides; tetramethylammonium hydroxide (TMAH) and the like.
  • the content of the basic hydroxide may be within the following range based on the total mass of the polishing liquid, from the viewpoint of easily improving the polishing rate of metal.
  • the content of basic hydroxide is 0.01% by mass or more, 0.05% by mass or more, 0.1% by mass or more, 0.15% by mass or more, 0.2% by mass or more, 0.25% by mass Above, it may be 0.3% by mass or more, 0.35% by mass or more, 0.4% by mass or more, 0.45% by mass or more, or 0.48% by mass or more.
  • the content of the basic hydroxide is 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, 1% by mass or less, 0.8% by mass or less, 0.6% by mass or less, 0 0.5% by mass or less, or 0.48% by mass or less. From these points of view, the basic hydroxide content may be 0.01 to 5% by mass.
  • the polishing liquid according to this embodiment does not have to contain peroxide.
  • peroxide including the above-mentioned ammonium salts, ammonium persulfate, potassium persulfate, hydrogen peroxide, ferric nitrate, cerium diammonium nitrate, iron sulfate, ozone, hypochlorous acid, hypochlorous acid salts, potassium periodate, peracetic acid and the like.
  • the polishing liquid according to this embodiment does not have to contain hydrogen peroxide.
  • Peroxide content or hydrogen peroxide content is 0.1% by mass or less, less than 0.1% by mass, 0.01% by mass or less, or 0.001% by mass, based on the total mass of the polishing liquid. less than or substantially 0% by mass.
  • the pH of the polishing liquid according to this embodiment may be within the following range.
  • the pH of the polishing liquid is 3.00 or more, 4.00 or more, more than 4.00, 5.00 or more, from the viewpoint of easily improving the polishing rate of the member to be polished containing the resin and the polishing rate of the metal. 6.00 or more, 7.00 or more, more than 7.00, 7.50 or more, 8.00 or more, more than 8.00, 8.50 or more, 9.00 or more, or 9.30 or more .
  • the pH of the polishing liquid may be 9.40 or higher, or 9.50 or higher.
  • the pH of the polishing liquid is 13.00 or less, 12.00 or less, 11.50 or less, 11.00 or less, from the viewpoint of easily improving the polishing rate of the member to be polished containing resin and the polishing rate of metal. It may be 10.50 or less, 10.00 or less, 9.80 or less, 9.60 or less, 9.50 or less, or 9.40 or less. From these points of view, the pH of the polishing liquid may be 3.00 to 13.00, 7.00 to 12.00, or 9.00 to 11.00.
  • the pH of the polishing liquid can be adjusted with the above acid component, ammonia, basic hydroxide, and the like.
  • the pH of the polishing liquid according to this embodiment can be measured with a pH meter (for example, model number: PHL-40 manufactured by Toa DKK Co., Ltd.).
  • a pH meter for example, model number: PHL-40 manufactured by Toa DKK Co., Ltd.
  • the electrode is placed in the polishing solution and the value is measured after the electrode has stabilized for two minutes or longer. At this time, the temperature of both the standard buffer solution and the polishing solution is set to 25°C.
  • the polishing liquid according to the present embodiment may be stored as a polishing liquid storage liquid with the amount of water reduced compared to when it is used.
  • the polishing liquid storage liquid is a storage liquid for obtaining the polishing liquid, and the polishing liquid can be obtained by diluting the polishing liquid storage liquid with water before or during use.
  • the dilution ratio is, for example, 1.5 times or more.
  • the polishing liquid according to the present embodiment may be stored as a one-component polishing liquid containing at least abrasive grains and an ether compound A, and a slurry (first liquid) and an additive liquid (second liquid) are It may be stored as a multi-liquid polishing liquid.
  • the constituent components of the polishing liquid are divided into a slurry and an additive liquid so that the slurry and the additive liquid are mixed to form a polishing liquid.
  • the slurry contains at least abrasive grains and water, for example.
  • the additive liquid contains, for example, at least the ether compound A and water.
  • Components other than the abrasive grains, the ether compound A, and water may be contained in the additive liquid of the slurry and the additive liquid.
  • the components of the polishing liquid may be divided into three or more liquids and stored.
  • the polishing liquid may be prepared by mixing the slurry and the additive liquid immediately before or during polishing.
  • the slurry and the additive liquid in the multi-liquid polishing liquid may be separately supplied onto the polishing platen, and the slurry and the additive liquid may be mixed on the polishing platen to prepare the polishing liquid.
  • the polishing method according to this embodiment includes a polishing step of polishing a resin-containing member to be polished using the polishing liquid according to this embodiment.
  • the surface to be polished of the member to be polished can be polished, and the surface to be polished on which resin is present can be polished.
  • the member to be polished may contain a resin and a silicon compound (eg, silicon oxide), and may contain particles containing a resin and a silicon compound.
  • the surface to be polished on which the resin and the silicon compound are present can be polished.
  • the member to be polished may contain resin and metal (eg, copper).
  • the surface to be polished on which resin and metal are present can be polished.
  • the member to be polished may contain a resin, a silicon compound (eg, silicon oxide) and a metal (eg, copper), and may contain particles containing the resin, the silicon compound, and the metal.
  • the surface to be polished on which resin, silicon compound and metal are present can be polished.
  • Metals include copper, cobalt, tantalum, aluminum, titanium, tungsten and the like.
  • Silicon compounds include silicon oxides (eg, SiO 2 ), SiOC, silicon nitrides (eg, SiN), and the like.
  • the resin may contain epoxy resin, and the member to be polished may contain particles containing resin and silicon oxide.
  • the component manufacturing method according to the present embodiment includes a singulation step of singulating the member to be polished (substrate) that has been polished by the polishing method according to the present embodiment.
  • the singulation step may be, for example, a step of obtaining chips (eg, semiconductor chips) by dicing a wafer (eg, semiconductor wafer) polished by the polishing method according to the present embodiment.
  • the method for manufacturing a semiconductor component according to the present embodiment comprises dividing the member to be polished by the polishing method according to the present embodiment into individual semiconductor components ( For example, a step of obtaining a semiconductor chip).
  • the component manufacturing method according to the present embodiment may include a polishing step of polishing the member to be polished by the polishing method according to the present embodiment before the singulation step.
  • the component according to this embodiment is a component obtained by the method for manufacturing a component according to this embodiment, and may be a semiconductor component, a chip (for example, a semiconductor chip), or the like.
  • the method for manufacturing a joined body according to this embodiment includes the bonding surface of a member to be polished polished by the polishing method according to this embodiment, or the bonding surface of a component obtained by the method for manufacturing a component according to this embodiment ( For example, a bonding step of bonding a bonding surface of a semiconductor component obtained by the method for manufacturing a semiconductor component according to the present embodiment and a bonding surface of an object to be bonded.
  • the joint surface of the member to be polished or the joint surface of the part may be the surface to be polished by the polishing method according to the present embodiment.
  • the object to be bonded to the member or part to be polished may be a member to be polished polished by the polishing method according to the present embodiment, or a part obtained by the method for manufacturing a part according to the present embodiment.
  • the object to be joined may be different from these members and parts to be polished.
  • the bonding step when the bonding surface of the member or component to be polished has a metal portion and the bonding surface of the object to be bonded has a metal portion, the metal portions may be brought into contact with each other.
  • the metal portion may contain copper.
  • a joined body according to the present embodiment is a joined body obtained by the method for manufacturing a joined body according to the present embodiment.
  • An electronic device includes at least one selected from the group consisting of a member to be polished by the polishing method according to the present embodiment, the component according to the present embodiment, and the joined body according to the present embodiment. .
  • Example 1 Cerium oxide particles (abrasive grains, manufactured by Showa Denko Materials Co., Ltd., trade name: HS-8005), 1-propoxy-2-propanol (ether compound A), polyglycerin (ether compound A, glycerin decamer, Sakamoto Yakuhin Kogyo Co., Ltd.
  • PGL750 weight average molecular weight: 750, hydroxyl value: 870 to 910), malic acid, glycine, ammonium persulfate, ammonia, 1-hydroxybenzotriazole, potassium hydroxide, and by mixing distilled water , Cerium oxide particles 1% by mass, 1-propoxy-2-propanol 0.67% by mass, polyglycerin 1% by mass, malic acid 0.01% by mass, glycine 0.4% by mass, ammonium persulfate 0.8% by mass , 0.15% by weight of ammonia, 0.03% by weight of 1-hydroxybenzotriazole, and 0.48% by weight of potassium hydroxide.
  • Example 2 Cerium oxide particles (abrasive grains, same as in Example 1), 3-methoxy-3-methyl-1-butanol (ether compound A), polyglycerin (ether compound A, same as in Example 1), malic acid, glycine , ammonium carbonate, ammonium persulfate, 1-hydroxybenzotriazole, potassium hydroxide, and distilled water to obtain 1% by mass of cerium oxide particles and 0.305% by mass of 3-methoxy-3-methyl-1-butanol.
  • Example 1 ⁇ Average particle diameter of abrasive grains> Using "Microtrac MT3300EXII” manufactured by Microtrac Bell Co., Ltd., the average particle size of abrasive grains in the polishing liquid was determined.
  • Example 2 and Comparative Example 1 the average particle size D50 was 341 nm and the average particle size D80 was 609 nm.
  • the pH of the polishing liquid was measured using a pH meter (manufactured by Toa DKK Co., Ltd., model number: PHL-40). After two-point calibration of the pH meter using phthalate pH buffer (pH: 4.01) and neutral phosphate pH buffer (pH: 6.86) as standard buffers, the electrode of the pH meter was It was placed in the polishing liquid and after two minutes or more had passed, the value was measured.
  • the pH of Example 1 was 9.53
  • the pH of Example 2 was 9.33
  • the pH of Comparative Example 1 was 9.97.
  • a substrate portion containing particles containing epoxy resin and silicon oxide, and openings formed in the substrate portion ( a via located in the through-thickness opening) and containing copper As substrates for evaluating the polishing rate of the resin-containing member to be polished, a substrate portion containing particles containing epoxy resin and silicon oxide, and openings formed in the substrate portion ( a via located in the through-thickness opening) and containing copper. A plurality of vias with a diameter of 200 ⁇ m or less were arranged in an array. The cross-sectional shape of the via perpendicular to the thickness direction of the base material portion was circular. The substrate had a polished surface on which epoxy resin, silicon oxide and copper were present.
  • a substrate for evaluating the polishing rate of copper a substrate having a copper film formed on a ⁇ 300 mm silicon wafer was prepared.
  • the substrate was attached to a substrate attachment holder to which a suction pad was attached.
  • a holder was placed on a surface plate on which a pad made of porous urethane resin was adhered so that the surface to be polished (the region where the two types of vias described above were arranged) faced the pad.
  • the substrate was pressed against the pad with a polishing load of 4 psi while supplying the aforementioned polishing liquid onto the pad at a supply rate of 350 mL/min.
  • the surface plate was rotated at 147 min ⁇ 1 and the holder at 153 min ⁇ 1 for 5 minutes for polishing.
  • the polished substrate was thoroughly washed with pure water and then dried.
  • a change in thickness of the substrate before and after polishing was measured using a stylus profilometer to determine the polishing rate of the resin-containing member to be polished.
  • a change in thickness of the substrate before and after polishing was measured using an optical interference type film thickness measuring device to determine the copper polishing rate.
  • the average value of the amount of change in thickness was measured at a total of 5 points at 4 points in the central part of the substrate and in the outer peripheral part of the substrate (4 points located at the center of the substrate at equal intervals).
  • the polishing rate of the member to be polished containing resin was 0.52 ⁇ m/min in Example 1, 0.55 ⁇ m/min in Example 2, and 0.40 ⁇ m/min in Comparative Example 1. In Examples 1 and 2, it is confirmed that an excellent polishing rate for a member to be polished containing resin can be obtained.
  • the polishing rate of copper was 1.19 ⁇ m/min in Example 1, 1.32 ⁇ m/min in Example 2, and 1.22 ⁇ m/min in Comparative Example 1.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

L'invention concerne un liquide de polissage pour polissage d'un élément à polir comprenant une résine, lequel liquide de polissage comprend des grains abrasifs contenant un oxyde de cérium, et un composé éther possédant un groupe hydroxy. L'invention concerne également un procédé de polissage selon lequel l'élément à polir comprenant une résine est poli à l'aide dudit liquide de polissage. En outre, l'invention concerne un procédé de fabrication de composant semi-conducteur selon lequel un composant semi-conducteur est obtenu par division de l'élément à polir poli selon ledit procédé de polissage. Enfin, l'invention concerne un procédé de fabrication de corps lié selon lequel une face liaison de l'élément à polir poli selon ledit procédé de polissage, ou une face liaison du composant semi-conducteur obtenu par ledit procédé de fabrication de composant semi-conducteur, et une face liaison d'un corps à lier, sont liées.
PCT/JP2021/031892 2021-08-31 2021-08-31 Liquide de polissage, procédé de polissage, procédé de fabrication de composant semi-conducteur, et procédé de fabrication de corps lié Ceased WO2023032027A1 (fr)

Priority Applications (19)

Application Number Priority Date Filing Date Title
PCT/JP2021/031892 WO2023032027A1 (fr) 2021-08-31 2021-08-31 Liquide de polissage, procédé de polissage, procédé de fabrication de composant semi-conducteur, et procédé de fabrication de corps lié
EP22864511.5A EP4379779A4 (fr) 2021-08-31 2022-08-29 Liquide de polissage, procédé de polissage, procédé de fabrication de composant, et procédé de fabrication de composant semi-conducteur
US18/686,043 US20240392162A1 (en) 2021-08-31 2022-08-29 Polishing liquid, polishing method, component manufacturing method, and semiconductor component manufacturing method
PCT/JP2022/032453 WO2023032930A1 (fr) 2021-08-31 2022-08-29 Liquide de polissage, procédé de polissage, procédé de fabrication de composant, et procédé de fabrication de composant semi-conducteur
US18/569,943 US20240282581A1 (en) 2021-08-31 2022-08-29 Polishing liquid, polishing method, component manufacturing method, and semiconductor component manufacturing method
JP2023545570A JP7750295B2 (ja) 2021-08-31 2022-08-29 研磨液、研磨方法、部品の製造方法、及び、半導体部品の製造方法
EP22864512.3A EP4379780A4 (fr) 2021-08-31 2022-08-29 Liquide de polissage, procédé de polissage, procédé de fabrication de composant, et procédé de fabrication de composant semi-conducteur
JP2023545569A JP7718493B2 (ja) 2021-08-31 2022-08-29 研磨液、研磨方法、部品の製造方法、及び、半導体部品の製造方法
PCT/JP2022/032451 WO2023032928A1 (fr) 2021-08-31 2022-08-29 Liquide de polissage, procédé de polissage, procédé de fabrication de composant, et procédé de fabrication de composant semi-conducteur
EP22864510.7A EP4339254A4 (fr) 2021-08-31 2022-08-29 Liquide de polissage, procédé de polissage, procédé de fabrication de composant, et procédé de fabrication de composant semi-conducteur
US18/686,053 US20250187137A1 (en) 2021-08-31 2022-08-29 Polishing solution, polishing method, component manufacturing method, and semiconductor component manufacturing method
PCT/JP2022/032452 WO2023032929A1 (fr) 2021-08-31 2022-08-29 Liquide de polissage, procédé de polissage, procédé de fabrication de composant, et procédé de fabrication de composant semi-conducteur
KR1020247002680A KR20240024995A (ko) 2021-08-31 2022-08-29 연마액, 연마 방법, 부품의 제조 방법, 및, 반도체 부품의 제조 방법
KR1020237043099A KR20240006690A (ko) 2021-08-31 2022-08-29 연마액, 연마 방법, 부품의 제조 방법, 및, 반도체 부품의 제조 방법
KR1020247002677A KR20240024994A (ko) 2021-08-31 2022-08-29 연마액, 연마 방법, 부품의 제조 방법, 및, 반도체 부품의 제조 방법
JP2023545568A JP7729388B2 (ja) 2021-08-31 2022-08-29 研磨液、研磨方法、部品の製造方法、及び、半導体部品の製造方法
TW111132870A TW202317733A (zh) 2021-08-31 2022-08-31 研磨液、研磨方法、組件之製造方法及半導體組件之製造方法
JP2025132417A JP2025159069A (ja) 2021-08-31 2025-08-07 研磨液、研磨方法、部品の製造方法、及び、半導体部品の製造方法
JP2025145114A JP2025174985A (ja) 2021-08-31 2025-09-02 研磨液、研磨方法、部品の製造方法、及び、半導体部品の製造方法

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4161394A (en) * 1978-06-19 1979-07-17 Regan Glen B Polishing slurry of xanthan gum and a dispersing agent
JP2007318072A (ja) * 2006-04-27 2007-12-06 Kao Corp 研磨液組成物
CN106701020A (zh) * 2016-12-30 2017-05-24 东莞市淦宏信息科技有限公司 一种树脂镜片研磨液
CN111315836A (zh) * 2017-11-10 2020-06-19 三星Sdi株式会社 有机膜cmp浆料组合物和使用其的抛光方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4161394A (en) * 1978-06-19 1979-07-17 Regan Glen B Polishing slurry of xanthan gum and a dispersing agent
JP2007318072A (ja) * 2006-04-27 2007-12-06 Kao Corp 研磨液組成物
CN106701020A (zh) * 2016-12-30 2017-05-24 东莞市淦宏信息科技有限公司 一种树脂镜片研磨液
CN111315836A (zh) * 2017-11-10 2020-06-19 三星Sdi株式会社 有机膜cmp浆料组合物和使用其的抛光方法

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