WO2022148033A1 - Multirow dual-energy linear array detector scanning method, system, medium, and device - Google Patents

Abstract

A multirow dual-energy linear array detector scanning method, a system, a medium, and a device. The method comprises the following steps: using multiple monocrystalline silicon multirow dual-energy linear array detectors to collect high-energy image data and low-energy image data; employing an FPGA circuit-based DTDI cumulative workflow to process the high-energy image data and the low-energy image data to produce a high-energy detector output signal strength and a low-energy detector output signal strength; employing a mapping formula to calculate the transparency of each pixel on the basis of the high-energy detector output signal strength and of the low-energy detector output signal strength, converting the transparency into hue, saturation, and brightness; merging, on the basis of a conversion formula, the hue, saturation, and brightness of each pixel to generate an RGB image. The multirow linear array detector scanning method, the system, the medium, and the device implement high spatial resolution when used in a low X-ray dose condition.

Description

Scanning method, system, medium and device for multi-row dual-energy linear array detector technical field

The invention relates to the technical field of linear array detector detection, in particular to a scanning method, system, medium and device of a multi-row dual-energy linear array detector.

Background technique

At present, in the field of food foreign body detection, there are two trends. One is to use multi-energy spectrum to realize the identification of material properties and improve the foreign body recognition rate; , to improve the signal-to-noise ratio to identify finer foreign objects. In the design of conventional X-ray linear array detectors for food foreign object detection, single crystal silicon is used as the photodiode for receiving visible light, because the price and performance requirements are balanced; in addition, the pixel size requirements are generally standardized to 0.4mm. That is, the common types of line scan X-ray detectors are single-row 0.4mm pitch single-crystal silicon linear arrays, which obviously have the following shortcomings:

1. Considering the cost factor, the linear array detectors are basically single-energy form, and foreign objects can only be judged by the change of gray value, and there is a risk of missed judgment and misjudgment.

2. Most of them do not have the ability to identify material properties, which makes it more difficult to identify foreign objects with low density and thin objects.

3. One-dimensional single-row linear array, the pixels are generally standard 0.4mm, the requirements for the radiation source are high, and a large mA exposure under a certain kV is required to achieve a high signal-to-noise ratio, and a high-power radiation source is required. Better radiators and solutions increase system costs and reduce system stability and durability.

4. Due to the limitation of the mechanical structure, the width and height need to be compressed in size, so it is difficult to combine the dual-energy material property identification and multi-row TDI sensor technology into one for subsystem design and development, and to realize the two technologies at the same time, The price is high and the market competitiveness is insufficient.

5. For the detection of bone debris in meat food, single energy is obviously insufficient and cannot be recognized and eliminated at a high level, while dual energy fusion, subtractive contrast enhancement and material identification are more advantageous.

6. The wafers of monocrystalline silicon are mainly 8 inches. In the current food foreign body detection field, FSI (front side irradiation) is basically used, and the design of smaller pixels and more rows cannot be achieved. Under the constraint of 3.2mm rear collimation width, in general FSI process, only 4 rows can be achieved under 0.4mm pitch. Using the BSI process, 8 rows can be achieved under 0.4mm pitch.

Therefore, it is hoped to solve the problem of how to improve the resolution of the linear array detector under the condition of low cost.

SUMMARY OF THE INVENTION

In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a scanning method, system, medium and device for a multi-row dual-energy linear array detector, which are used to solve the problem of improving the The problem of the resolution of the line array detector.

In order to achieve the above object and other related objects, the present invention provides a scanning method for a multi-row dual-energy linear array detector, comprising the following steps: using a plurality of single-crystal silicon multi-row dual-energy linear array detectors to collect high-energy image data and low-energy images Data; the single-crystal silicon multi-row dual-energy linear array detector includes: a single-crystal silicon low-energy PD module with four or more rows, a single-crystal silicon high-energy PD module with four or more rows, a readout chip, a connector, The middle layer is a PCB board embedded with copper filters, the monocrystalline silicon low-energy PD modules with more than or equal to four rows are arranged on one side of the PCB board, and the single-crystal silicon high-energy PD modules with more than or equal to four rows are arranged on the The other side of the PCB board; the monocrystalline silicon low-energy PD modules with four rows or more, the single-crystal silicon high-energy PD modules with four rows or more, readout chips, and connectors are all electrically connected to the PCB board. FPGA circuit-based DTDI accumulation workflow is used to process high-energy image data and low-energy image data to obtain the output signal strength of high-energy detectors and the output signal strength of low-energy detectors; based on the output signal strength of high-energy detectors and the output signal strength of low-energy detectors The transparency of each pixel is calculated by the mapping formula, and the transparency is converted into hue, saturation and brightness; based on the conversion formula, the hue, saturation and brightness of each pixel are fused to generate an RGB image.

In order to achieve the above object, the present invention also provides a scanning system for a multi-row dual-energy linear array detector, comprising: an acquisition module, an accumulation module, a calculation module and a generation module;

The acquisition module is used to collect high-energy image data and low-energy image data by using a plurality of single-crystal silicon multi-row dual-energy linear array detectors; the single-crystal silicon multi-row dual-energy linear array detectors include: Crystalline silicon low-energy PD modules, single-crystal silicon high-energy PD modules with four or more rows, readout chips, connectors, and the middle layer are PCB boards embedded with copper filters, and the single-crystal silicon low-energy PD modules with four or more rows are The group is arranged on one side of the PCB board, and the monocrystalline silicon high-energy PD modules with four or more rows are arranged on the other side of the PCB board; the single-crystal silicon low-energy PD modules with more than or equal to four rows, more than The monocrystalline silicon high-energy PD modules, readout chips, and connectors that are equal to four rows are all electrically connected on the PCB; The low-energy image data is processed to obtain the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector; the calculation module is used to calculate the transparency of each pixel point by using a mapping formula based on the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector, Transparency is converted into hue, saturation and brightness; the generating module is used for generating an RGB image by fusing the hue, saturation and brightness of each pixel point based on the conversion formula.

In order to achieve the above object, the present invention also provides a computer-readable storage medium on which a computer program is stored, and when the computer program is executed by a processor, implements any of the above-mentioned scanning methods for a multi-row linear array detector.

In order to achieve the above object, the present invention also provides a multi-row linear array detector scanning device, comprising: a processor and a memory; the memory is used to store a computer program; the processor is connected to the memory and is used to execute the A computer program stored in the memory, so that the multi-row linear array detector scanning device executes any of the above-mentioned multi-row linear array detector scanning methods.

Finally, the present invention also provides a multi-row linear array detector scanning system, including a multi-row linear array detector scanning device and an FPGA circuit; the multi-row linear array detector scanning device includes: four or more rows of monocrystalline silicon The low-energy PD module, the single-crystal silicon high-energy PD module with four or more rows, the readout chip, the connector, and the PCB board with the filter layer in the middle layer, the single-crystal silicon low-energy PD module with more than or equal to four rows is arranged in the On one side of the PCB board, the monocrystalline silicon high-energy PD modules with four or more rows are arranged on the other side of the PCB board; The single crystal silicon high-energy PD module, readout chip, and connector are all electrically connected to the PCB board; the FPGA circuit is used to realize the splicing, packaging, and uploading of high-energy image data and low-energy image data to the host computer.

As described above, the scanning method, system, medium and device of a multi-row linear array detector of the present invention have the following beneficial effects: it is used to achieve high spatial resolution under the condition of low X-ray dose.

Description of drawings

FIG. 1a is a flowchart of a scanning method for a multi-row dual-energy linear array detector according to an embodiment of the present invention;

FIG. 1b is a flowchart of a scanning method for a multi-row dual-energy linear array detector in yet another embodiment of the present invention;

FIG. 1c is a flowchart of a scanning method for a multi-row dual-energy linear array detector in yet another embodiment of the present invention;

FIG. 2 is a schematic structural diagram of a multi-row dual-energy linear array detector scanning system in an embodiment of the present invention;

3 is a schematic structural diagram of a scanning device for multi-row dual-energy linear array detectors in an embodiment of the present invention;

4a is a schematic structural diagram of a scanning device for a multi-row dual-energy linear array detector in yet another embodiment of the multi-row dual-energy linear array detector scanning system of the present invention;

4b is a side view showing the structure of a scanning device for a multi-row dual-energy linear array detector in yet another embodiment of the multi-row dual-energy linear array detector scanning system of the present invention;

4c is a schematic structural diagram of a multi-row dual-energy linear array detector scanning system in yet another embodiment of the present invention;

FIG. 4d is a schematic flow chart of the scanning system of the multi-row dual-energy linear array detector in yet another embodiment of the present invention.

Component label description

21 Acquisition module

22 Accumulation module

23 Computing Modules

24 Generate modules

31 processors

32 memory

4 Double row PD module

41 Monocrystalline silicon low energy PD module

42 Monocrystalline silicon high-energy PD module

43 Read out the chip

44 Connectors

45 The middle layer is the PCB board with embedded copper filter

5 FPGA circuit

Detailed ways

The embodiments of the present invention are described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the following embodiments and features in the embodiments may be combined with each other under the condition of no conflict.

It should be noted that the drawings provided in the following embodiments are only for illustrating the basic concept of the present invention in a schematic way, so the drawings only show the components related to the present invention rather than the number, shape and number of components in actual implementation. For dimension drawing, the type, quantity and proportion of each component can be changed at will in actual implementation, and the component layout may also be more complicated.

The multi-row dual-energy linear array detector scanning method, system, medium and device of the present invention are used to achieve high spatial resolution under the condition of low X-ray dose.

As shown in FIG. 1a, in one embodiment, the scanning method for a multi-row dual-energy linear array detector of the present invention includes the following steps:

Step S11 , using a plurality of single-crystal silicon multi-row dual-energy linear array detectors to collect high-energy image data and low-energy image data; the single-crystal silicon multi-row dual-energy linear array detectors include: four or more rows of single-crystal silicon low-energy linear array detectors The PD module, the single-crystal silicon high-energy PD module with four or more rows, the readout chip, the connector, and the middle layer are PCB boards embedded with copper filters, and the single-crystal silicon low-energy PD modules with four or more rows are arranged in On one side of the PCB board, the monocrystalline silicon high-energy PD modules with four or more rows are arranged on the other side of the PCB board; The single crystal silicon high-energy PD module, readout chip, and connector are all electrically connected on the PCB board.

Step S12 , using the DTDI accumulation workflow based on the FPGA circuit to process the high-energy image data and the low-energy image data to obtain the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector.

Specifically, the use of the FPGA circuit-based DTDI (digital time delay integration) accumulation workflow to process the high-energy image data and the low-energy image data to obtain the output signal strength of the high-energy detector and the output signal strength of the low-energy detector includes: the FPGA circuit opens a plurality of The buffer space stores the data of the monocrystalline silicon low-energy PD modules and monocrystalline silicon high-energy PD modules in each row respectively; through the adder, the signal accumulation of the same target information is realized. When the accumulation of the preset level is completed, a Frame high energy detector output signal strength or low energy detector output signal strength. As shown in FIG. 1b, high-energy image data and low-energy image data are collected by using a plurality of single-crystal silicon multi-row dual-energy linear array detectors; the single-crystal silicon multi-row dual-energy linear array detectors include: eight rows of single-crystal silicon Low-energy PD modules, eight-row monocrystalline silicon high-energy PD modules. The FPGA circuit opens up multiple buffer spaces to store the data of the monocrystalline silicon low-energy PD module and monocrystalline silicon high-energy PD module in each row respectively; through the adder, the signal accumulation of the same target information is realized. When the preset eight levels are completed After the accumulation of , output a frame of high-energy detector output signal intensity or low-energy detector output signal intensity. 8A is output first in Figure 1b. Taking the FPGA circuit as the operation core, DTDI (Digital Integration Delay) is realized: the FPGA circuit opens up multiple buffer spaces to store each row of data; through the adder, the signal accumulation of the same target information is realized; when the 8-level accumulation is completed, One frame (one line) of data is output; since the calculation is done inside the FPGA circuit, it takes very little time, and the high-speed characteristics of a single-row line array can still be achieved; the data after DTDI can improve the signal-to-noise ratio and enhance the contrast. It is easier to observe foreign objects or abnormal gaps.

Step S13 , using a mapping formula to calculate the transparency of each pixel point based on the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector, and convert the transparency into hue, saturation, and brightness.

Specifically, calculating the transparency of each pixel channel based on the output signal strength of the high-energy detector and the output signal strength of the low-energy detector using a mapping formula, and converting the transparency into hue, saturation, and brightness includes: The output signal intensity of the no-load high-energy detector and the no-load low-energy detector of the crystalline silicon multi-row dual-energy linear array detector; the high-energy detector output signals of the two critical substances of the first atomic number and the second atomic number are collected. intensity and low-energy detector output signal intensity, respectively calculate the high and low-energy transparency of the two critical substances of the first atomic number and the second atomic number, based on the high and low energy transparency of the two critical substances of the first atomic number and the second atomic number , and low-energy transparency to fit the boundary curve; collect the output signal intensity of the high-energy detector and the low-energy detector output signal intensity of the object to be inspected, and calculate the corresponding high and low energy transparency; according to the high and low energy transparency corresponding to each pixel point in The position in the coordinate system of the boundary curve, and the hue, saturation, and brightness of each pixel are calculated using the hue, saturation, and brightness calculation methods.

Specifically, the no-load high-energy detector output signal intensity and the no-load low-energy detector output signal intensity of a plurality of single-crystal silicon multi-row dual-energy linear array detectors during no-load are collected.

The output signal strength of the no-load high-energy detector is I _0H and the output signal strength of the no-load low-energy detector is I _0L . Wherein: I _H and I _L are the output signal strength of the high-energy detector and the output signal strength of the low-energy detector respectively; I _0H and I _0L are the output signal strength of the no-load high-energy detector and the output signal strength of the no-load low-energy detector, respectively; μ _{( E, Z)} is the linear attenuation coefficient of the inspected object; Z is the atomic number of the inspected object; t is the thickness of the inspected object along the ray direction; E _H , E _L are the X-rays received by the high and low energy detectors respectively energy of.

Collect the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector of the two critical substances of the first atomic number and the second atomic number, and calculate the high and low energy of the two critical substances of the first atomic number and the second atomic number respectively. Transparency, a boundary curve is fitted based on the high and low energy transparency of the two critical substances of the first atomic number and the second atomic number. Specifically, the first atomic number is 10, and the second atomic number is 18. Calculate the output signal intensity of high energy detector and low energy detector output signal intensity of two critical substances with atomic numbers Z=10 and Z=18, calculate their high and low energy transparency respectively, and use polynomial to fit the boundary curve. _TH is high energy transparency and _TL is low energy transparency. The high and low energy transparency of the first atomic number 10 and the different thicknesses of the detected first atomic number 10 substance use polynomials to fit the boundary curve of the first atomic number 10 substance, and the second atomic number 18. The high and low energy transparency and the different thicknesses of the detected second atomic number 18 substance use a polynomial to fit the boundary curve of the second atomic number 18 substance. The boundary curve can be obtained by fitting the different thicknesses of the detected first atomic number 10 substance as the x-axis, and the ratio of the high-energy transparency to the low-energy transparency of the detected first atomic number 10 substance as the y-axis. , the boundary curve of the substance with the first atomic number 10 is obtained. The boundary curve can be obtained by fitting the different thicknesses of the detected second atomic number 18 substance as the x-axis, and the ratio of the high-energy transparency to the low-energy transparency of the detected second atomic number 18 substance as the y-axis. , to obtain the boundary curve of the substance with the second atomic number 18. The two boundary curves are superimposed to obtain the boundary curves of the two critical substances.

The following formulas are high and low energy transparency calculation formulas:

Collect the output signal intensity of the high-energy detector and the low-energy detector output signal intensity of the object to be inspected, and calculate the corresponding high and low energy transparency. Calculate the high-energy detector output signal intensity I _H and the low-energy detector output signal intensity _IL of the object to be inspected based on the following formula.

The corresponding _TH high energy transparency and _TL low energy transparency were calculated based on the following formulas.

According to the position of the high and low energy transparency corresponding to each pixel in the coordinate system of the boundary curve, the hue, saturation and brightness of each pixel are calculated by using the calculation method of hue, saturation and brightness. The position of the high and low energy transparency corresponding to each pixel point in the boundary curve coordinate system refers to the position of the high and low energy transparency obtained by the same fitting method in the boundary curve coordinate system. For example, the boundary curve can be obtained by fitting the different thicknesses of the detected first atomic number 10 substance as the x-axis, and the ratio of the high-energy transparency to the low-energy transparency of the detected first atomic number 10 substance as the y-axis. to obtain the boundary curve of the substance with the first atomic number of 10. Then, according to the position in the boundary curve coordinate system of the ratio of the corresponding high and low energy transparency of the object to be inspected at this time. The hue, saturation, and brightness of each pixel are calculated using the hue, saturation, and brightness calculation methods.

Hue calculation: first define a different hue range for each area, the hue range of the organic area is R ₁ -R ₂ , the mixture is G ₁ -G ₂ , and the inorganic substance is B1-B2; In the mixture area, for example,

Then the formula for calculating hue H is:

Similarly, the formula for calculating the hue H of organic matter is:

Similarly, the formula for calculating the hue H of inorganic substances is:

Saturation calculation

S=S ₀ +(1-S ₀ )(T _H +T _L )/2

Among them, S ₀ is the saturation reference value, the purpose is to prevent the low-gray pixels from graying out the image because the saturation is too low.

Brightness calculation

Step S14 , fuse the hue, saturation and brightness of each pixel point based on the conversion formula to generate an RGB image.

Specifically, the image rendering algorithm based on the HSB color mode fuses the hue, saturation and brightness of each pixel to generate an RGB image. The conversion formula is an existing conversion formula.

Specifically, the principle of contrast enhancement is shown in Fig. 1c. The ray source is still a single source, and the narrow fan beam is sent to multiple single-crystal silicon multi-row dual-energy linear array detectors through the collimation slit. Image data and low-energy image data; then, the two images are processed with on-line algorithm computing technology to extract objects of interest and identify foreign objects. The principle of the algorithm is that due to the different X-ray transmission efficiencies of different materials, the intensity performance of high-energy images and low-energy images will be different; according to the ratio between them, adjust the intensity level, and then subtract unnecessary parts to extract the target material. information. Through the contrast change algorithm, dual-energy subtraction is realized, non-interesting background information is subtracted, and the contrast of the target area is improved, so as to identify more subtle foreign objects; through the calculation and conversion of dual-energy data, X-ray fluoroscopy technology and dual After the energy technology is fused, the equivalent atomic number of the substance at any position can be obtained, and color coding is provided according to different atomic numbers of the substance: First, the R value can be calculated according to the high and low energy data of the dual-energy transmission image of the known substance. Then, the mathematical model of converting grayscale data to HSB color space is established, and based on the HSB to RGB formula, the HSB space is converted to RGB space; finally, the dual energy is used to solve the problem of low density and small objects. If it is difficult to identify the problem, it can be accurately grasped and identified by the difference in color.

As shown in FIG. 2 , in one embodiment, the scanning system for a multi-row dual-energy linear array detector of the present invention includes an acquisition module 21 , an accumulation module 22 , a calculation module 23 and a generation module 24 ; the acquisition module is used for using A plurality of single-crystal silicon multi-row dual-energy linear array detectors collect high-energy image data and low-energy image data; the single-crystal silicon multi-row dual-energy linear array detectors include: single-crystal silicon low-energy PD modules with four or more rows, The single-crystal silicon high-energy PD modules with four or more rows, readout chips, connectors, and intermediate layers are PCB boards embedded with copper filters, and the single-crystal silicon low-energy PD modules with four or more rows are arranged on the PCB board. On one side of the PCB, the monocrystalline silicon high-energy PD modules with four or more rows are arranged on the other side of the PCB; The high-energy PD module, the readout chip, and the connector are all electrically connected on the PCB board; the accumulation module is used to process the high-energy image data and the low-energy image data by using the DTDI accumulation workflow based on the FPGA circuit to obtain high-energy detection. The output signal intensity of the detector and the output signal intensity of the low-energy detector; the calculation module is used to calculate the transparency of each pixel point by using a mapping formula based on the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector, and convert the transparency into hue, saturation degree and brightness; the generation module is used to generate an RGB image by fusing the hue, saturation and brightness of each pixel point based on the conversion formula.

Specifically, the accumulation module is used to process the high-energy image data and the low-energy image data by using the DTDI accumulation workflow based on the FPGA circuit to obtain the output signal strength of the high-energy detector and the output signal strength of the low-energy detector. The FPGA circuit opens up multiple buffer spaces. , respectively store the data of the monocrystalline silicon low-energy PD module and monocrystalline silicon high-energy PD module in each row; through the adder, the signal accumulation of the same target information is realized, and after the accumulation of the preset level is completed, a frame of high energy is output. Detector output signal strength or low energy detector output signal strength.

Specifically, the calculation module is used to calculate the transparency of each pixel point based on the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector using a mapping formula, and converting the transparency into hue, saturation and brightness includes: The output signal intensity of the no-load high-energy detector and the no-load low-energy detector output signal intensity of multiple single-crystal silicon multi-row dual-energy linear array detectors; collect the high energy of the two critical substances of the first atomic number and the second atomic number. The output signal intensity of the detector and the output signal intensity of the low-energy detector are used to calculate the high and low energy transparency of the two critical substances of the first atomic number and the second atomic number, respectively, based on the two kinds of the first atomic number and the second atomic number. The high and low energy transparency of the critical substance is fitted to the boundary curve; the output signal intensity of the high-energy detector and the low-energy detector output signal intensity of the object to be inspected are collected, and the corresponding high and low energy transparency are calculated; , the position of the low-energy transparency in the boundary curve coordinate system, and the hue, saturation, and brightness of each pixel are calculated using the hue, saturation, and brightness calculation methods.

It should be noted that the structures and principles of the acquisition module 21 , the accumulation module 22 , the calculation module 23 and the generation module 24 are in one-to-one correspondence with the steps in the scanning method of the multi-row linear array detector, so they are not repeated here.

It should be noted that it should be understood that the division of each module of the above system is only a division of logical functions, and may be fully or partially integrated into a physical entity in actual implementation, or may be physically separated. And these modules can all be implemented in the form of software calling through processing elements; they can also all be implemented in hardware; some modules can also be implemented in the form of calling software through processing elements, and some modules can be implemented in hardware. For example, the x module may be a separately established processing element, or it may be integrated into a certain chip of the above-mentioned device to be implemented, in addition, it may also be stored in the memory of the above-mentioned device in the form of program code, and a certain processing element of the above-mentioned device Calls and executes the functions of the above x module. The implementation of other modules is similar. In addition, all or part of these modules can be integrated together, and can also be implemented independently. The processing element described here may be an integrated circuit with signal processing capability. In the implementation process, each step of the above-mentioned method or each of the above-mentioned modules can be completed by an integrated logic circuit of hardware in the processor element or an instruction in the form of software.

For example, the above modules may be one or more integrated circuits configured to implement the above methods, such as: one or more specific integrated circuits (Application Specific Integrated Circuit, ASIC for short), or one or more microprocessors ( Micro Processor Uint, referred to as MPU), or, one or more Field Programmable Gate Array (Field Programmable Gate Array, referred to as FPGA circuit) and so on. For another example, when one of the above modules is implemented in the form of a processing element scheduler code, the processing element may be a general-purpose processor, such as a central processing unit (Central Processing Unit, CPU for short) or other processors that can call program codes. For another example, these modules can be integrated together and implemented in the form of a system-on-a-chip (SOC for short).

In an embodiment of the present invention, the present invention further includes a computer-readable storage medium, on which a computer program is stored, and when the program is executed by a processor, implements any of the above-mentioned scanning methods for a multi-row dual-energy linear array detector. .

Those of ordinary skill in the art can understand that all or part of the steps of implementing the above method embodiments may be completed by hardware related to computer programs. The aforementioned computer program may be stored in a computer-readable storage medium. When the program is executed, the steps including the above method embodiments are executed; and the foregoing storage medium includes: ROM, RAM, magnetic disk or optical disk and other media that can store program codes.

As shown in FIG. 3 , in an embodiment, the scanning device for a multi-row dual-energy line array detector of the present invention includes: a processor 31 and a memory 32; the memory 32 is used to store a computer program; the processor 31 and the The memory 32 is connected to execute a computer program stored in the memory 32, so that the scanning device for a multi-row dual-energy linear array detector executes any one of the scanning methods for a multi-row linear array detector.

Specifically, the memory 32 includes various media that can store program codes, such as ROM, RAM, magnetic disk, U disk, memory card, or optical disk.

Preferably, the processor 31 may be a general-purpose processor, including a central processing unit (Central Processing Unit, CPU for short), a network processor (Network Processor, NP for short), etc.; it may also be a digital signal processor (Digital Signal Processor). , referred to as DSP), application specific integrated circuit (Application Specific Integrated Circuit, referred to as ASIC), Field Programmable Gate Array (Field Programmable Gate Array, referred to as FPGA circuit) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components .

Specifically, as shown in FIGS. 4a-4b, the single-crystal silicon multi-row dual-energy linear array detector (double-row PD module 4) includes: a single-crystal silicon low-energy PD module 41 (L- PDM), more than or equal to four rows of monocrystalline silicon high-energy PD module 42 (H-PDM), readout chip 43 (readout integrated circuit, ROIC), connector 44 (connector), the middle layer is a PCB board with embedded copper filters 45. The single-crystal silicon low-energy PD modules 41 with four or more rows are arranged on one side of the PCB board, and the single-crystal silicon high-energy PD modules 42 with four or more rows are arranged on the other side of the PCB board. One side; the single-crystal silicon low-energy PD module 41 with four rows or more, the single-crystal silicon high-energy PD module 42 with four rows or more, the readout chip 43 and the connector 44 are all electrically connected on the PCB board . For example, the monocrystalline silicon low-energy PD module 41 with four rows or more can be: a four-row monocrystalline silicon low-energy PD module, a six-row monocrystalline silicon low-energy PD module, or an eight-row monocrystalline silicon low-energy PD module . The low energy PD module is low energy photodiode module (L-PDM), and the high energy PD module is high energy photodiode module (H-PDM). The intermediate layer is copper sheet 451 . The monocrystalline silicon low-energy PD module 41 with four or more rows and the single-crystal silicon high-energy PD module 42 with four rows or more are used to transmit information to the readout chip 43, and the readout chip transmits information to the connector 44, so that the connector 44 forwards the information to the FPGA circuit 5, and the FPGA circuit 5 opens a plurality of buffer spaces, respectively storing the data of the monocrystalline silicon low-energy PD module and the monocrystalline silicon high-energy PD module 42 in each row; Through the adder, the signal accumulation of the same target information is realized, and after the accumulation of the preset level is completed, a frame of the output signal strength of the high-energy detector or the output signal strength of the low-energy detector is output.

Two-way PD sensor design: monocrystalline silicon low-energy PD module 41 (L-PDM) with four or more rows, single-crystalline silicon high-energy PD module 42 (H-PDM) with four or more rows, can sense two kinds of X- Ray energy spectrum (soft rays and hard rays), based on the entire system, the rear collimator slit size is between 0.3 and 0.5mm. In principle, the pitch=0.4mm, the PD mode of the 8-row monocrystalline silicon PD scheme is designed Group, 0.4mm is the standard pixel size for food foreign object detection. PD (photodiode) senses visible light information and converts it into corresponding electrical signals. The two-way PD modules do not directly convert X-ray signals. Therefore, through the different selection of the two scintillator materials (based on the different absorption conversion characteristics of X-ray), the conversion of X-ray to visible light of the two energy spectra is achieved. The upper-layer monocrystalline silicon low-energy PD module does not completely absorb and convert the soft X-ray, and pass through a certain thickness of filter copper (the thickness is generally between 0.1 and 0.6mm) to further isolate the low-energy level X-ray and ensure high energy. The PD module absorbs and converts high-level X-rays, thereby improving the calculation of the equivalent atomic number of material properties by the dual-energy algorithm, and achieving accurate material property identification (organic, inorganic or mixture). ROIC (readout chip 43) is in the form of 256 channels, which can receive analog information input (2*128channels) of every two rows of pixels, realize signal acquisition, integral amplification and A/D conversion, and at the same time transmit digital signals to the signal through the connector Further processing of the image is done on the processing circuit. All pixel channels are independent, and the signals are collected and converted at the same time, which realizes high-speed and parallel processing, and prevents the detection of moving objects from distortion, dislocation and delay, thereby ensuring the accuracy and effectiveness of the calculation.

As shown in FIG. 4 c , the scanning system for a multi-row dual-energy linear array detector includes: a plurality of single-crystal silicon multi-row dual-energy linear array detectors (a dual-row PD module 4 ) and an FPGA circuit 5 . The FPGA circuit 5 realizes the splicing, packaging, and uploading of high-energy image data and low-energy image data to the host computer software, and the FPGA circuit 5 is used to open multiple cache spaces, respectively storing the monocrystalline silicon low-energy PD modules of each row. 41 and the data of the monocrystalline silicon high-energy PD module 42; through the adder, the signal accumulation of the same target information is realized. When the accumulation of the preset level is completed, a frame of high-energy detector output signal intensity or low-energy detector output signal intensity is output. . Output high-energy detector output signal strength or low-energy detector output signal strength to the PC terminal (host computer).

The electronic circuit of the scanning system of the multi-row dual-energy linear array detector involved in the present invention is shown in 4c. The core of the innovative hardware design lies in the modularization of each processing unit, and the command signals and data signals between each other go through LVDS to ensure stability and high speed. PD sensor board, which integrates PD module and ROIC, ensures that the signals of all channels are collected at the same time, integrated and amplified at the same time, and A/D converted at the same time; through the connector interface, using FPC, the read board can control the PD sensor board. The big function, one is to control the ROIC work through instructions, the other is to realize the parallel transmission of multi-channel digital signals through LVDS technology; after the data splicing is realized on the read board, the LVDS data transmission technology is used to transmit multiple channels in parallel. The board completes the packaging and uploading work; the Core board provides a power supply solution to ensure the working voltage of each module; PD sensor board (single crystal silicon multi-row dual-energy linear array detector), readboard (reading and publishing) and core board (core board) modules The FPGA circuit 5 includes: read board (reading and publishing) and core board (core board). It is not only conducive to system stability, reducing power consumption, but also realizing the application of different detection sizes through the combination of different numbers, that is, the concept of platform.

In the FPGA circuit, the signal is superimposed based on the configured M series parameters. The superposition method is carried out according to the Row superposition and the Row shift rule. The same information points are accumulated M times for output; when the running direction of the transmission belt changes, the TDI's The starting point is also different, it needs to be flipped and accumulated, and the stitching direction must be consistent with the Scan direction; once N exposures are performed in one job, the final image will form an image height of N+M-1, as shown in Figure 4d below 8 exposures 8 Class TDI example is shown.

The invention is based on the single-crystal silicon sensor technology and uses the BSI packaging process to realize the application of multiple rows of small pixel sizes, and can fully cover various small-sized foreign objects and low-density detection. Based on DTDI technology, the delay accumulation of ray energy is realized, which improves the signal-to-noise ratio, not only reduces the performance energy of the tube (reduces the heat dissipation and power consumption requirements of the whole machine), but also reduces the protection level. The device is more stable, has better durability, and makes the image clearer, reducing the false positive rate of foreign object rejection by the algorithm. Simultaneously, the high and low sensors are used to absorb and convert the ray energy spectrum at two energy levels, and at the same time, dual-energy data is collected, and the target image is colored to realize real-time identification of material properties, and expand the depth and depth of foreign object property identification. width. The integration of sensor technology and electronic technology of dual-energy and TDI discrimination technologies is realized synchronously in a subsystem, which ensures the accuracy of data, real-time and high-efficiency discrimination, and greatly reduces the cost of products and improves the Value for money.

To sum up: it is suitable for foreign object detection or defect detection of various categories, especially for high frame rate detection. A product can basically cover all, such as dual-energy technology, only one of them can be used according to the needs of use, and customers can choose flexibly. The realization of the signal detection of the two technical principles not only improves the recognition ability, but also enhances the contrast map of the image (the image signal-to-noise ratio is better). Two technical means, hardware integration, good system stability, in line with the detector's "small and delicate" characteristics, not only can cover food foreign body detection, but also can cover industrial non-destructive detection, as well as the quality of industrial products such as daily necessities and bedding. Judging by the level, the overall application is wider and wider, and the goal of one machine for multiple purposes is achieved. On the hardware circuit, a combined and modular design is adopted. When a module is abnormal, it can be replaced with spare parts, which reduces the maintenance time and cost, and does not require on-site support from maintenance engineers.

The invention solves the pain points of some application scenarios that cannot be automatically identified and eliminated in the current food foreign body detection field, and the function can be turned on or off through software settings, and the detection target is more clear.

To sum up, the scanning method, system, medium and device of a multi-row dual-energy linear array detector of the present invention are used to achieve high spatial resolution under the condition of low X-ray dose. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

The above-mentioned embodiments merely illustrate the principles and effects of the present invention, but are not intended to limit the present invention. Anyone skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed in the present invention should still be covered by the claims of the present invention.

Claims (10)

A multi-row dual-energy linear array detector scanning method, characterized in that it comprises the following steps: High-energy image data and low-energy image data are collected by using a plurality of single-crystal silicon multi-row dual-energy linear array detectors; the single-crystal silicon multi-row dual-energy linear array detectors include: single-crystal silicon low-energy PD modules with more than or equal to four rows , The single-crystal silicon high-energy PD module with more than or equal to four rows, the readout chip, the connector, and the middle layer are the PCB board embedded with copper filter, and the single-crystal silicon low-energy PD module with more than or equal to four rows is arranged on the PCB On one side of the board, the single-crystal silicon high-energy PD modules with four or more rows are arranged on the other side of the PCB board; Silicon high-energy PD modules, readout chips, and connectors are all electrically connected on the PCB board; Using the DTDI accumulation workflow based on FPGA circuit to process the high-energy image data and low-energy image data to obtain the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector; Based on the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector, the transparency of each pixel is calculated by the mapping formula, and the transparency is converted into hue, saturation and brightness; Based on the conversion formula, the hue, saturation and brightness of each pixel are fused to generate an RGB image. The scanning method for a multi-row dual-energy linear array detector according to claim 1, wherein the high-energy image data and the low-energy image data are processed by using a DTDI accumulation workflow based on an FPGA circuit to obtain the high-energy detector output signal intensity and Low energy detector output signal strength includes: The FPGA circuit opens up multiple cache spaces to store the data of the monocrystalline silicon low-energy PD module and monocrystalline silicon high-energy PD module in each row respectively; through the adder, the signal accumulation of the same target information is realized. After accumulation, output a frame of high-energy detector output signal intensity or low-energy detector output signal intensity. The scanning method for multi-row dual-energy linear array detectors according to claim 1, wherein the transparency of each pixel channel is calculated based on the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector by using a mapping formula, Transparency converted to Hue, Saturation and Lightness includes: Collect the no-load high-energy detector output signal intensity and no-load low-energy detector output signal intensity of multiple single-crystal silicon multi-row dual-energy linear array detectors at no-load; Collect the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector of the two critical substances of the first atomic number and the second atomic number, and calculate the high and low energy of the two critical substances of the first atomic number and the second atomic number respectively. Transparency, a boundary curve is fitted based on the high and low energy transparency of the two critical substances of the first atomic number and the second atomic number; Collect the output signal intensity of the high-energy detector and the low-energy detector output signal intensity of the object to be inspected, and calculate the corresponding high and low energy transparency; According to the position of the high and low energy transparency corresponding to each pixel in the coordinate system of the boundary curve, the hue, saturation and brightness of each pixel are calculated by using the calculation method of hue, saturation and brightness. The scanning method for a multi-row dual-energy linear array detector according to claim 1, wherein the first atomic number is 10, and the second atomic number is 18. A multi-row dual-energy linear array detector scanning system, characterized in that it comprises: an acquisition module, an accumulation module, a calculation module and a generation module; The acquisition module is used to collect high-energy image data and low-energy image data by using a plurality of single-crystal silicon multi-row dual-energy linear array detectors; the single-crystal silicon multi-row dual-energy linear array detectors include: Crystalline silicon low-energy PD modules, single-crystal silicon high-energy PD modules with four or more rows, readout chips, connectors, and the middle layer are PCB boards embedded with copper filters, and the single-crystal silicon low-energy PD modules with four or more rows are The group is arranged on one side of the PCB board, and the monocrystalline silicon high-energy PD modules with four or more rows are arranged on the other side of the PCB board; the single-crystal silicon low-energy PD modules with more than or equal to four rows, more than Equivalent to four rows of monocrystalline silicon high-energy PD modules, readout chips, and connectors are electrically connected on the PCB board; The accumulation module is used to process the high-energy image data and the low-energy image data by adopting the DTDI accumulation workflow based on the FPGA circuit to obtain the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector; The calculation module is used to calculate the transparency of each pixel point based on the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector using a mapping formula, and convert the transparency into hue, saturation and brightness; The generating module is used for generating an RGB image by fusing the hue, saturation and brightness of each pixel point based on the conversion formula. The scanning system for multi-row dual-energy linear array detectors according to claim 5, wherein the accumulation module is used to process high-energy image data and low-energy image data to obtain a high-energy detector using a DTDI accumulation workflow based on an FPGA circuit Output signal strength and low energy detector output signal strength include: The FPGA circuit opens up multiple cache spaces to store the data of the monocrystalline silicon low-energy PD module and monocrystalline silicon high-energy PD module in each row respectively; through the adder, the signal accumulation of the same target information is realized. After accumulation, output a frame of high-energy detector output signal intensity or low-energy detector output signal intensity. The multi-row dual-energy linear array detector scanning system according to claim 5, wherein the calculation module is configured to calculate each pixel point by using a mapping formula based on the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector Transparency, which converts transparency to hue, saturation, and lightness includes: Collect the no-load high-energy detector output signal intensity and no-load low-energy detector output signal intensity of multiple single-crystal silicon multi-row dual-energy linear array detectors at no-load; Collect the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector of the two critical substances of the first atomic number and the second atomic number, and calculate the high and low energy of the two critical substances of the first atomic number and the second atomic number respectively. Transparency, a boundary curve is fitted based on the high and low energy transparency of the two critical substances of the first atomic number and the second atomic number; Collect the output signal intensity of the high-energy detector and the low-energy detector output signal intensity of the object to be inspected, and calculate the corresponding high and low energy transparency; According to the position of the high and low energy transparency corresponding to each pixel in the coordinate system of the boundary curve, the hue, saturation and brightness of each pixel are calculated by using the calculation method of hue, saturation and brightness. A computer-readable storage medium on which a computer program is stored, wherein the computer program is executed by a processor to realize the scanning of the multi-row dual-energy linear array detector according to any one of claims 1 to 4 method. A multi-row dual-energy linear array detector scanning device, characterized in that it comprises: a processor and a memory; the memory is used to store computer programs; The processor is connected to the memory for executing a computer program stored in the memory, so that the multi-row linear array detector scanning device executes the multi-row linear array of any one of claims 1 to 4 Detector scanning method. A multi-row dual-energy linear array detector scanning system, characterized in that it comprises a multi-row dual-energy linear array detector scanning device and an FPGA circuit; The multi-row dual-energy linear array detector scanning device includes: a single-crystal silicon low-energy PD module with four or more rows, a single-crystal silicon high-energy PD module with four or more rows, a readout chip, a connector, and an intermediate layer. A PCB board embedded with copper filtration, the monocrystalline silicon low-energy PD modules with four or more rows are arranged on one side of the PCB board, and the single-crystal silicon high-energy PD modules with four or more rows are arranged on the PCB The other side of the board; the single-crystal silicon low-energy PD modules with four or more rows, the single-crystal silicon high-energy PD modules with four or more rows, readout chips, and connectors are all electrically connected on the PCB board; The FPGA circuit is used for splicing, packaging, and uploading high-energy image data and low-energy image data to upper computer software for image post-processing.

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