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WO2022058014A1 - Ensemble cathode, appareil de dépôt et procédé de dépôt par pulvérisation - Google Patents

Ensemble cathode, appareil de dépôt et procédé de dépôt par pulvérisation Download PDF

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Publication number
WO2022058014A1
WO2022058014A1 PCT/EP2020/075990 EP2020075990W WO2022058014A1 WO 2022058014 A1 WO2022058014 A1 WO 2022058014A1 EP 2020075990 W EP2020075990 W EP 2020075990W WO 2022058014 A1 WO2022058014 A1 WO 2022058014A1
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WO
WIPO (PCT)
Prior art keywords
cathode
rotatable
drive unit
assembly
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2020/075990
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English (en)
Inventor
Reiner Hinterschuster
Anke Hellmich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to PCT/EP2020/075990 priority Critical patent/WO2022058014A1/fr
Publication of WO2022058014A1 publication Critical patent/WO2022058014A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)

Definitions

  • Embodiments described herein relate to layer deposition by sputtering from a target.
  • embodiments of the present disclosure may relate to a cathode assembly and an apparatus for sputter deposition.
  • Some embodiments particularly relate to a cathode assembly for vertical sputter deposition in a vacuum environment, and particularly to a rotatable cathode assembly.
  • the substrates can be coated in one or more chambers of a coating apparatus.
  • the substrates may be coated in a vacuum, using a vapor deposition technique.
  • substrates may be coated by a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process or a plasma enhanced chemical vapor deposition (PECVD) process etc.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • PECVD plasma enhanced chemical vapor deposition
  • the process is performed in a process apparatus or process chamber where the substrate to be coated is located.
  • a deposition material is provided in the apparatus.
  • a plurality of materials, and also oxides, nitrides or carbides thereof, may be used for deposition on a substrate.
  • Coated materials may be used in several applications and in several technical fields.
  • substrates for displays are often coated by a physical vapor deposition (PVD) process.
  • Further applications include insulating panels, organic light emitting diode (OLED) panels, substrates with thin film transistors (TFT), color filters or the like.
  • the deposition material can be present in the solid phase as a target.
  • atoms of the target material i.e. the material to be deposited
  • the atoms of the target material are deposited on the substrate to be coated.
  • the sputter material i.e. the material to be deposited on the substrate
  • the target may be made from the material to be deposited or may have a backing element on which the material to be deposited is fixed.
  • the target including the material to be deposited is supported or fixed in a predefined position in a deposition chamber.
  • Segmented or monolithic targets for example planar or rotatable targets may be used for sputtering. Due to the geometry and design of the cathodes, rotatable targets typically have a higher utilization and an increased operation time than planar ones. The use of rotatable targets may prolong service life and reduces costs.
  • the cathode assemblies include drive units for rotating the cathode and/or targets which are subject to maintenance. Accordingly, it is beneficial to provide an improved arrangement and set-up of the cathode assembly for providing the target material in the deposition process.
  • a cathode assembly for sputter deposition includes a first cathode drive unit configured to rotate a first rotatable cathode, a second cathode drive unit adjacent to the first cathode drive unit configured to rotate a second rotatable cathode, and a connecting element configured to connect the first rotatable cathode and the second rotatable cathode at a side of the cathode assembly opposite the first cathode drive unit and to provide a cantilevered cathode assembly.
  • a deposition apparatus for depositing a material onto a substrate.
  • the apparatus includes a vacuum chamber and a cathode assembly according to embodiments described herein.
  • the first cathode drive unit and the second cathode drive unit of the cathode assembly are arranged outside the vacuum chamber.
  • a method for sputter deposition includes providing a cathode assembly according to embodiments described herein in a vacuum chamber and depositing a material with the cathode assembly onto a substrate.
  • Embodiments are also directed at apparatuses for carrying out the disclosed methods and include apparatus parts for performing each described method aspect. These method aspects may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner.
  • embodiments according to the present disclosure are also directed at methods for operating the described apparatus. It includes method aspects for carrying out every function of the apparatus.
  • Fig. 1 shows a schematic front view of a deposition apparatus according to embodiments described herein;
  • Fig. 2 shows a schematic view of a connecting element according to embodiments described herein;
  • Figs. 3 A and 3B show a schematic side view of a deposition apparatus according to embodiments described herein;
  • Fig. 4 shows a flow diagram of a method according to embodiments described herein.
  • sputtering can be undertaken as diode sputtering or as magnetron sputtering.
  • Magnetron sputtering is particularly advantageous in that the deposition rates are rather high.
  • the magnet assembly or magnetron behind the sputter material of the cathode or sputter target in order to trap the free electrons within the magnetic field, which is generated in the direct vicinity of the target surface, these electrons are forced to move within the magnetic field and cannot escape. This enhances the probability of ionizing the gas molecules typically by several orders of magnitude. This, in turn, increases the deposition rate substantially.
  • the magnet assembly can be positioned inside the rotatable cathode or sputter target.
  • sputtering may also be utilized when depositing a material onto a sensitive substrate, e.g. a substrate that has previously been processed. Accordingly, sputtering, and in particular magnetron sputtering can be used as a kind of finishing process to further process the already processed substrate differently.
  • a sensitive substrate e.g. a substrate including OLED layers
  • several adaptations can be made to the sputtering process, e.g. the position of the rotatable sputtering cathodes, i.e. the arrangement and/or orientation of the magnet assemblies of the cathode assembly, can be adapted such that low energy spray coating occurs towards the sensitive substrate.
  • deposition may include sputtering of a transparent conductive oxide film.
  • Deposition may include sputtering of materials like ITO, IZO, IGZO or MoN. Further, deposition may include sputtering of silver (Ag), Ag alloys and/or magnesium (Mg). Further exemplarily, deposition may include sputtering of metallic material.
  • sputtering may be utilized for the deposition of electrodes, particularly transparent electrodes in displays, particularly OLED displays, liquid crystal displays, and touchscreens. Further, sputtering may be utilized for the deposition of electrodes, particularly transparent electrodes in thin film solar cells, photodiodes, and smart or switchable glass.
  • the term “magnet assembly” as used herein may refer to a unit capable of generating a magnetic field.
  • the magnet assembly may consist of a permanent magnet. This permanent magnet may be arranged within the cathode or sputter target such that charged particles can be trapped within the generated magnetic field, e.g. in an area above the sputter target.
  • the magnet assembly includes a magnet yoke.
  • the substrate can be continuously moved during coating past the cathode assembly (“dynamic coating”), or the substrate may rest essentially at a constant position during coating (“static coating”). Further, also substrate sweeping or substrate wobbling may be possible.
  • dynamic coating coating past the cathode assembly
  • static coating coating
  • substrate sweeping or substrate wobbling may be possible.
  • the embodiments described in the present disclosure relate to both dynamic coating and static coating processes.
  • a large area substrate can be GEN 4.5, which corresponds to about 0.67 m 2 substrates (0.73x0.92m), GEN 5, which corresponds to about 1.4 m 2 substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m 2 substrates (1.95 m x 2.2 m), GEN 8, which corresponds to about 5.3m 2 substrates (2.16 m x 2.46 m), or even GEN 10, which corresponds to about 9.0 m 2 substrates (2.88 m x 3.13 m). Even larger generations such as GEN 11, GEN 12 and/or corresponding substrate areas can similarly be implemented.
  • a deposition apparatus according to embodiments described herein may be configured for deposition on large area substrates.
  • substrate as used herein shall particularly embrace inflexible substrates, e.g., glass plates.
  • substrate may also embrace flexible substrates such as a web or a foil. Further, also a sensitive substrate may be included.
  • coating and the term “depositing” are used synonymously herein.
  • the coating or deposition process used in embodiments described herein is sputtering, particularly PVD sputtering.
  • a deposition apparatus for depositing a material onto a substrate is provided.
  • Fig. 1 exemplarily shows a front view of a deposition apparatus 100 for depositing a material onto a substrate employing a cathode assembly 110 according to embodiments described herein.
  • the deposition apparatus 100 as exemplarily shown in Fig. 1 includes a vacuum chamber 105.
  • the vacuum chamber may include a top wall 106 and a bottom wall 107.
  • the apparatus 100 further includes a cathode assembly 110.
  • the cathode assembly includes a first cathode drive unit 113 configured to rotate a first rotatable cathode 111.
  • the cathode assembly includes a second cathode drive unit 114 adjacent to the first cathode drive unit 113 configured to rotate a second rotatable cathode 112.
  • the cathode assembly 110 i.e. the first rotatable cathode 111 and the second rotatable cathode 112, may include the first rotatable target and the second rotatable target.
  • the first cathode drive unit 113 and the second cathode drive unit 114 may be arranged outside the vacuum chamber. Accordingly, the first cathode drive unit 113 and the second cathode drive unit 114 may extend through the chamber wall. Accordingly, the first and second cathode drive units may be detachably connected to the first rotatable cathode 111 and the second rotatable cathode 112 inside the vacuum chamber, respectively. Additionally or alternatively, the first cathode drive unit 113 and the second cathode drive unit 114 may be arranged inside the vacuum chamber.
  • the first cathode drive unit and the second cathode drive unit may be provided at the top wall 106 and/or at the bottom wall 107 of the vacuum chamber i.e. the first cathode drive unit and the second cathode drive unit may be provided at the top wall 106 and/or at the bottom wall 107 inside and/or outside the vacuum chamber.
  • the first and second drive units may extend through the top wall 106 and/or the bottom wall 107 of the vacuum chamber for being connected to the first and second rotatable cathode, respectively.
  • the first cathode drive unit 113 and the second cathode drive unit 114 may each include a bearing for allowing a rotational movement of the driven first and/or second rotatable cathodes.
  • the cathode assembly may be oriented substantially vertically in the vacuum chamber.
  • the cathode assembly may be oriented substantially horizontally in the vacuum chamber.
  • the first and second rotatable cathodes may be arranged substantially vertically or substantially horizontally in the vacuum chamber i.e. the first rotatable cathode and the second rotatable cathode may extend from the top of the vacuum chamber towards the bottom of the vacuum chamber or vice versa or from a side wall of the vacuum chamber to another side wall of the vacuum chamber.
  • substantially vertically or “substantially horizontally” may include cathode assemblies which are arranged at a small deviation from exact verticality or horizontality, e.g. an angle of up to 10° or even 15° may exist between the cathode assembly and the exact vertical or exact horizontal direction.
  • the apparatus according to embodiments described herein may be configured for deposition on substantially vertically oriented substrates.
  • the first cathode drive unit and the second cathode drive unit may be configured for providing a rotational movement to the first and second rotatable cathode.
  • the first and second drive unit may include mechanical, electrical and/or magnetic drive units for rotating the first and second rotatable cathodes.
  • the first drive unit and the second drive unit may include electrical motors, particularly each including at least one drive belt for transferring energy to the first and second rotatable cathodes, e.g. for transferring energy to a first and a second shaft to which the first and second rotatable cathodes may be connected to provide for a rotational movement of the first and second cathodes.
  • first and second drive unit may be arranged outside the vacuum chamber, i.e. under atmospheric pressure conditions.
  • the first and second drive unit may extend through a chamber wall of the vacuum chamber.
  • the first and second cathode may extend through the chamber wall and may be detachably connected to the first and second drive unit outside the vacuum chamber.
  • vacuum-tight sealings may be provided, e.g. sealings configured to allow for a rotational movement and/or sealings configured for static sealing.
  • the first and second drive unit each may further include a bearing to allow for a rotational movement of the first and second rotatable cathode, respectively.
  • the first cathode drive unit 113 and the second drive unit 114 may be configured for rotating the first rotatable cathode and the second rotatable cathode, respectively.
  • the first and second cathode may be rotated in the same direction or in different directions.
  • the first rotatable cathode 111 may be rotated clockwise and the second rotatable cathode 112 may be rotated anticlockwise or vice versa.
  • the first cathode drive unit 113 may induce a rotation of the first rotatable cathode in a direction and the second cathode drive unit 114 may induce a rotation of the second rotatable cathode in a direction different from the direction induced by the first cathode drive unit.
  • the first rotatable cathode may be rotated around a first axis Al and the second rotatable cathode may be rotated around a second axis A2.
  • a magnet assembly may be arranged in a cathode i.e. in the first and/or second rotatable cathode or cathode assembly.
  • a magnet assembly may be surrounded by a target material.
  • Each of the first and second cathodes may include a magnet assembly.
  • Each of the magnet assemblies may be surrounded by a different target material or the same target material.
  • a magnet assembly may be arranged so that the target material sputtered by the cathode assembly is sputtered towards a substrate or towards the remaining cathode i.e. the target material may be sputtered from one cathode in the direction of the other cathode and vice versa.
  • a magnet assembly may generate a magnetic field.
  • the magnetic field may cause one or more plasma regions to be formed near the magnetic field during a sputter deposition process.
  • the position of the magnet assembly within a cathode assembly affects the direction in which target material is sputtered away from or towards the cathode assembly during a sputter deposition process.
  • the magnet assembly can confine the plasma during sputtering.
  • An improved sputtering process can be provided with the magnet assembly.
  • the magnet assembly can be moved within the cathode or the target, respectively.
  • the first rotatable cathode 111 and the second rotatable cathode 112 or the targets, respectively may each rotate around an axis, i.e. the first rotatable cathode may rotate around the axis Al and the second rotatable cathode may rotate around the axis A2.
  • the magnet assembly can be provided at various angular coordinates relative to the axes.
  • a movement of the magnet assembly for example, a movement by an angle, can result in an adjustable deposition direction of the sputtering cathode.
  • one or more magnet assemblies can be movable, for example, to determine a beneficial magnet position.
  • the magnet assemblies in the event of a predetermined magnet position, the magnet assemblies may be fixed.
  • the magnet positions between different pairs of cathodes may vary, i.e. a first cathode pair may have first magnet assembly positions and a second pair of cathodes may have second cathode assembly positions different from the first magnet assembly position.
  • the deposition apparatus may include an even number of cathodes, i.e. the cathodes may be arranged in cathode pairs.
  • the deposition apparatus may include an odd number of cathodes.
  • sputtering at least a material, e.g. one first material, from a first rotary target with a first magnet assembly and from a second rotary target, also providing the one first material, with a second magnet assembly can be provided.
  • the first magnet assembly can be disposed within the first rotary target providing a first plasma confinement in a first direction facing towards the second rotary target.
  • the second magnet assembly can be disposed within the second rotary target providing a second plasma confinement in a second direction facing towards the first rotary target.
  • plasma confinement of the first rotary target facing the second target and the plasma confinement of the second rotary target facing the first target may have the advantage that a soft deposition is achieved.
  • bombardment of the substrate with high energy particles may be reduced. Damage to the substrate, particularly to a coating on the substrate, may be mitigated.
  • the above described magnet position may be utilized to adapt the process to result in a compromise between a low energy deposition, particularly for generating an initial layer or seed layer, and a deposition rate which is increased as compared to low energy deposition particularly after an initial layer or seed layer has been deposited on a substrate, more particularly wherein the initial layer or layer portion protects the substrate or layers on a substrate from particles with higher energies.
  • Embodiments of the present disclosure can reduce displacement of targets, which may be caused by interaction of magnet assemblies in neighboring targets, particularly for magnet assemblies facing each other.
  • the first rotatable cathode i.e. a first magnet assembly of the first rotatable cathode may provide a first plasma confinement in a first direction facing towards the second rotatable cathode i.e. a second magnet assembly of the second rotatable cathode.
  • the second magnet assembly within the second rotatable cathode may provide a second plasma confinement in a second direction facing towards the first rotatable cathode or first magnet assembly.
  • the apparatus may be configured such that the first direction and the second direction deviate from being parallel to a substrate plane by an angle of less than 90°, e.g.
  • the “substrate plane” particularly refers to a plane of the substrate whereupon the material is deposited.
  • the first and the second direction may deviate from being parallel to the substrate plane by an angle of for example less than 90°, 50°, 30°, 20° or 10°.
  • the cathode assembly 110 further includes a connecting element 120.
  • the connecting element 120 is configured to connect the first rotatable cathode 111 and the second rotatable cathode 112 at a side of the cathode assembly opposite the first cathode drive unit 113 and to provide a cantilevered cathode assembly.
  • the connecting element may be configured to allow a distant mutual support of the first cathode drive unit and the second cathode drive unit.
  • the connecting element may connect the first rotatable cathode and the second rotatable cathode such that the first and second cathodes mutually support each other. Further, the connecting element 120 may stabilize the cathode assembly in a free space of the vacuum chamber.
  • the term “cantilevered” as used herein may be understood as one end of the cathode assembly being arranged freely in a space.
  • the free space may be the chamber, e.g. vacuum chamber, in which the cathode assembly may be arranged.
  • One end of the cathode assembly i.e. the free ends of the first and second cathode being connected to the connecting element, may thus be free of contact with respect to other components of the deposition apparatus, like e.g. the chamber walls, chamber doors and the like.
  • a weight of the cathode assembly may be carried solely by the vacuum chamber, i.e. the chamber walls (top or bottom) and/or the cathode drive units, respectively.
  • the connecting element may include one or more pins 122 for connecting the connecting element to the first rotatable cathode and the second rotatable cathode.
  • the one or more pins may be partially inserted into an end of the first cathode and the second cathode.
  • the one or more pins may extend from the connecting element in a substantially perpendicular direction with respect to a base portion 124 of the connecting element.
  • the connecting element may include two pins, i.e. one pin for being connected to the first rotatable cathode 111 and one pin for being connected with the second rotatable cathode 112.
  • each of the two pins may be configured to be connected i.e. to be at least partially inserted into one of the first rotatable cathode and the second rotatable cathode. Further, the two pins may be rotatable with the first rotatable cathode and the second rotatable cathode. Accordingly, the connecting element may connect cathodes pairwise.
  • the connecting element may include as many pins as cathodes are provided. Accordingly, the one or more pins may be configured to provide a connection between the connecting element and the cathodes. Accordingly, more than two cathodes may be connected with the connecting element.
  • the one or more pins, in particular the two pins, for connecting the first rotatable cathode and the second rotatable cathode may elongate the cathodes such that a rotatable connection of the cathodes and the connecting element may be allowed.
  • the connecting element may include i.e. may be made of a vacuum-stable material, particularly a material selected from the group of stainless steel and alumina.
  • the material of the connecting element may be vacuum-resistant, i.e. a material may be chosen that may not be susceptible to outgassing effects.
  • Fig. 2 shows a schematic view of a connecting element 120 according to embodiments that can be combined with any other embodiment described herein.
  • the connecting element 120 may include one or more pins 122 and a base portion 124.
  • the connecting element 120 may include at least one first bearing 126 adjacent to the first rotatable cathode 111 and at least one second bearing 128 adjacent to the second rotatable cathode 112.
  • the at least one first bearing 126 and the at least one second bearing 128 may be configured to allow for a rotational movement of the one or more pins.
  • the at least one first bearing and the at least one second bearing are arranged with the one or more pins.
  • the at least one first bearing may be arranged adjacent to one pin of the one or more pins, i.e. the at least one first bearing may enable rotation of the pin around axis Al (seen in Fig. 1) and the at least one second bearing may be arranged adjacent to another pin of the one or more pins i.e. the at least one second bearing may enable rotation of the another pin around axis A2 (seen in Fig. 1).
  • the at least one first bearing and the at least one second bearing may be rotation bearings or slide bearings.
  • a rotational movement of the one or more pins may be allowed.
  • the rotation bearing may be a roller bearing, more particularly a ball bearing. Such bearings may be used under vacuum conditions while being robust and dimensionally scalable.
  • the connecting element may include two pins for being connected to the first and the second rotatable cathode. Adjacent to each of the two pins, two bearings, particularly ball bearings may be arranged to allow for a rotational movement of the two pins; i.e., two first bearings may be arranged adjacent to the pin connected to the first rotatable cathode and two second bearings may be arranged adjacent to the pin connected to the second rotatable cathode.
  • two first bearings may be arranged adjacent to the pin connected to the first rotatable cathode
  • two second bearings may be arranged adjacent to the pin connected to the second rotatable cathode.
  • the rotational movement of the two pins may be synchronous with the respective rotation of the first and second rotatable cathode.
  • the connecting element provides support to the cathode assembly. Further, the connecting element ensures the rotational movement of the cathodes while supporting the cathodes in a free space.
  • the cathode assembly is stabilized without the ends of the cathodes being attached to further rigid elements of the deposition apparatus e.g. the vacuum chamber walls, chamber doors and the like.
  • the transmission of forces from other elements of the deposition apparatus towards the cathode assembly e.g. vibrations, thermal expansion forces and/or other deformation forces is effectively prevented or avoided. Therefore, especially the cathode drive unit i.e. the first and the second cathode drive unit can be effectively protected and the lifetime of the drive units can be prolonged.
  • the other forces may be kept away from the drive units to ensure accurate function of the drive units.
  • the arrangement and/or orientation of the magnetic assemblies within the rotatable cathodes to allow for low energy coating may result in magnetic forces acting on the cathodes as attracting and/or repulsing forces. Vibrations and deformations of the cathodes may be reduced.
  • the connecting element may avoid or prevent excessive vibrations and deformations of the cathodes by stabilizing the cantilevered cathode assembly.
  • Figs. 3 A and 3B show a schematic side view of a deposition apparatus 300, 300’ according to embodiments described herein.
  • the deposition apparatus includes a cathode assembly according to any of the embodiments described herein, the first cathode drive unit and the second cathode drive unit being arranged outside the vacuum chamber.
  • the first cathode drive unit and the second cathode drive unit may be arranged at an outer top or outer bottom wall or an outer side wall of the vacuum chamber.
  • the first and second drive units may extend through the respective wall for being detachably connected to a first rotatable cathode and a second rotatable cathode inside the vacuum chamber.
  • the first and second drive unit may be drive units according to embodiments described herein.
  • Fig. 3A schematically depicts a side view of a deposition apparatus 300 where the drive unit, i.e. the first cathode drive unit 113 and the second cathode drive unit 114, may be arranged at a top wall 106 of the vacuum chamber 105.
  • the connecting element 120 may be arranged below the cathode assembly 110 i.e. the first rotatable cathode and the second rotatable cathode may hang from the top wall 106 of the vacuum chamber 105 into the free space of the vacuum chamber.
  • the cathode assembly may be arranged substantially vertically from the top towards the bottom of the vacuum chamber. Accordingly, the connecting element 120 may provide support to the cathode assembly at a bottom side of the cathode assembly.
  • Fig. 3B schematically depicts a side view of a deposition apparatus 300’ where the drive unit, i.e. the first cathode drive unit 113 and the second cathode drive unit 114, may be arranged at abottom wall 107 ofthe vacuum chamber 105.
  • the connecting element 120 may be arranged above the cathode assembly 110 i.e. the first rotatable cathode and the second rotatable cathode may extend from the bottom wall 107 of the vacuum chamber 105 into the free space of the vacuum chamber. Accordingly, the connecting element 120 may provide support to the cathode assembly at a top side of the cathode assembly.
  • the deposition apparatus may include a transport system 340.
  • the transport system 340 may be configured to transport a substrate 10 through the deposition apparatus in a transport direction parallel to the cathode assembly, i.e. parallel to a plane in which the first and second cathodes may be arranged.
  • the transport system may be a mechanical transport system, a magnetic levitation system or a combination thereof.
  • the deposition apparatus may be configured for dynamic coating or static coating.
  • the substrate 10 may be continuously transported during deposition, i.e. the substrate may be transported past the cathode assembly during deposition.
  • the substrate may be transported to the cathode assembly, stopped in front of the cathode assembly, and may be transported away from the cathode assembly after deposition has taken place.
  • the deposition apparatus may be configured for processing large area substrates.
  • the deposition apparatus may include a plurality of cathodes. For example, four or more, such as six or more or even 10 or more cathodes may be provided.
  • the plurality of cathodes may be connected by the connecting element, i.e. the connecting element may include as many pins of the one or more pins as cathodes are provided.
  • two of the plurality of cathodes may be connected with one connecting element.
  • the deposition apparatus may include half the number of connecting elements compared to the number of cathodes.
  • Fig. 4 shows a flow diagram of a method for sputter deposition according to embodiments described herein.
  • the method 400 includes providing a cathode assembly according to any of the embodiments described herein in a vacuum chamber (exemplarily indicated by box 460) and depositing a material with the cathode assembly onto a substrate (exemplarily indicated by box 470).
  • the cathode assembly may be provided substantially vertically in the vacuum chamber.
  • deposition may occur towards a substrate being oriented or arranged substantially vertically in the vacuum chamber.
  • the cathode assembly may be arranged in a plane and the substrate may be arranged in another plane substantially parallel to the plane in which the substrate may be arranged.
  • the cathode assembly i.e. the first and second rotatable cathodes may include magnet assemblies.
  • the magnet assemblies may be oriented such that the sputter material may be directed towards the respective other cathode. Accordingly, when the cathodes are rotating, every turn of a cathode may lead to the deposition of material on the respective other cathode of the cathode assembly. Accordingly, a plasma associated with the sputter deposition may be trapped between the first and the second rotatable cathodes and spray deposition may occur towards the substrate.
  • a low energy sputter deposition in the direction of a substrate being arranged in front of the cathode assembly.
  • the low energy sputter deposition or low energy stray coating may reach the substrate at a deposition angle of less than 90°.
  • a deposition direction may deviate from being parallel to a substrate plane by an angle of less than 90°, e.g. less than 45° or less than 40°, for example 0°.
  • the plane in which the substrate may be arranged i.e. the substrate plane, may be substantially parallel to a plane of the cathode assembly, i.e. the plane in which the first and second rotatable cathodes are arranged side by side.
  • the low energy stray coating may allow for deposition of material onto sensitive substrates, e.g. substrates that already have been processed in a different process.
  • finishing treatments of the substrate e.g. a substrate including OLED layers, can be carried out particularly carefully and gently without unnecessarily damaging the processed substrate.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention concerne un ensemble cathode (110) destiné à un dépôt par pulvérisation. L'ensemble cathode comprend une première unité d'entraînement de cathode (113) conçue pour faire tourner une première cathode rotative (111), une seconde unité d'entraînement de cathode (114) adjacente à la première unité d'entraînement de cathode conçue pour faire tourner une seconde cathode rotative (112), et un élément de connexion (120) conçu pour connecter la première cathode rotative et la seconde cathode rotative au niveau d'un côté de l'ensemble cathode opposé à la première unité d'entraînement de cathode et pour fournir un ensemble cathode en porte-à-faux.
PCT/EP2020/075990 2020-09-17 2020-09-17 Ensemble cathode, appareil de dépôt et procédé de dépôt par pulvérisation Ceased WO2022058014A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/EP2020/075990 WO2022058014A1 (fr) 2020-09-17 2020-09-17 Ensemble cathode, appareil de dépôt et procédé de dépôt par pulvérisation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2020/075990 WO2022058014A1 (fr) 2020-09-17 2020-09-17 Ensemble cathode, appareil de dépôt et procédé de dépôt par pulvérisation

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WO2022058014A1 true WO2022058014A1 (fr) 2022-03-24

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2387063A1 (fr) * 2010-05-11 2011-11-16 Applied Materials, Inc. Chambre pour dépôt physique en phase vapeur
WO2013178252A1 (fr) * 2012-05-29 2013-12-05 Applied Materials, Inc. Procédé permettant de recouvrir un substrat et dispositif d'enrobage
DE102014109265A1 (de) * 2014-07-02 2016-01-07 Von Ardenne Gmbh Vakuumbehandlungsanlage

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2387063A1 (fr) * 2010-05-11 2011-11-16 Applied Materials, Inc. Chambre pour dépôt physique en phase vapeur
WO2013178252A1 (fr) * 2012-05-29 2013-12-05 Applied Materials, Inc. Procédé permettant de recouvrir un substrat et dispositif d'enrobage
DE102014109265A1 (de) * 2014-07-02 2016-01-07 Von Ardenne Gmbh Vakuumbehandlungsanlage

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