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WO2021110405A1 - Gate driver for controlling a power switch - Google Patents

Gate driver for controlling a power switch Download PDF

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Publication number
WO2021110405A1
WO2021110405A1 PCT/EP2020/082334 EP2020082334W WO2021110405A1 WO 2021110405 A1 WO2021110405 A1 WO 2021110405A1 EP 2020082334 W EP2020082334 W EP 2020082334W WO 2021110405 A1 WO2021110405 A1 WO 2021110405A1
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WO
WIPO (PCT)
Prior art keywords
diode
low
switch
gate driver
side switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2020/082334
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German (de)
French (fr)
Inventor
Edwin Eberlein
Peter Sinn
Falko Friese
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Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
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Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of WO2021110405A1 publication Critical patent/WO2021110405A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18Modifications for indicating state of switch
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0027Measuring means of, e.g. currents through or voltages across the switch
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0063High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0072Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081Power supply means, e.g. to the switch driver

Definitions

  • Gate driver for controlling a circuit breaker
  • the invention relates to a gate driver for driving a power switch.
  • pulse inverters are used to control electrical machines, which convert an input DC voltage into a three-phase output voltage system with variable amplitude and / or frequency.
  • the document DE 10 2017 104983 A1 discloses a vehicle comprising an electric machine, an IGBT and a gate driver.
  • the IGBT has a gate, an emitter and a collector and is configured to pass an electrical charge through a phase of the electrical machine.
  • the gate driver is for conducting current to the gate at a first level and, in response to a time integral of a voltage across the phase exceeding a predetermined level, for transitioning from the first level to a second level which is less configured as the first level.
  • a power supply system for vehicles can include a gate driver that is configured to control a traction gate and a generator gate, which correspond to switches of a controllable voltage converter, so that the gates have alternating ON periods of pulse width modulation.
  • the gates can be activated in response to the fact that a throughput value falls below a threshold value.
  • the gate driver may further be configured to drive the gates such that a duty cycle of one of the gates in response to the throughput exceeding the threshold is zero.
  • the present invention provides a gate driver for driving a circuit breaker according to claim 1.
  • the invention relates to a gate driver for controlling a power switch, in particular a bipolar transistor with an insulated gate electrode, IGBT, or a power MOSFET, with a high-side system and a low-side system.
  • a high-side switch and a high-side diode are provided in the high-side system, and a low-side switch and a low-side diode are provided in the low-side system.
  • the high-side switch is connected to the high-side diode, and the low-side switch is connected to the low-side diode.
  • the interconnected high-side switch and high-side diode and the interconnected low-side switch and low-side diode are connected to one Phase connection of the circuit breaker connected.
  • the low-side system has a measuring device which is connected to the anode of at least one intermediate diode, the cathode of which is connected to the Ga te supply voltage of the high-side circuit breaker.
  • the invention it is possible to measure a gate supply voltage related to the high-side system or other voltages related to the high-side system by a measuring device related to the low-side system.
  • a complex voltage regulation carried out on site by a linear regulator or switching regulator for tightly tolerated supply voltages can be saved, or a diagnosis or controllability of the voltage can be achieved using these sensors.
  • a measuring device related to the common ground potential of the 3 lowside systems can often be seen in a conventional gate driver, because it can perform a large number of measuring and / or control tasks in all three phases relatively inexpensively.
  • this is used to implement a simple and inexpensive solution for measuring or monitoring the gate supply voltage of a circuit breaker in the high-side system.
  • a measuring device related to the lowside system can then, according to the invention, measure the gate supply voltage in the highside system at the anode of the intermediate diode during the time in which the lowside switch or the lowside diode is conductive.
  • the at least one intermediate diode is two intermediate diodes, the cathodes of which are connected to the two potentials of the gate supply voltage in the high-side system of the circuit breaker and their anodes to the input outputs of a differential amplifier are connected, and that the output of the differential amplifier is connected to the measuring device.
  • the present measurement of a voltage in the high-side system includes the following falsifications:
  • the forward voltage of the lowside switch and / or the lowside diode falsifies the measurement signal and the forward voltage of the intermediate diode falsifies the measurement signal.
  • the falsifications resulting from this procedure can be compensated as follows:
  • a level shifter is arranged between the cathode of the at least one intermediate diode and the gate connection of the power switch.
  • the high gate supply voltage can be brought back into the measuring range by a level shifter, for example by adding a constant negative voltage, for example by a Zener diode.
  • a level shifter is a circuit that is used to translate signal information from one voltage range to another, thereby enabling compatibility between integrated circuits with different voltage requirements.
  • the differential amplifier has a peak value rectifier which is arranged between the output of the differential amplifier and the measuring device.
  • the two intermediate diodes block. If the remaining wiring in the lowside system ensures that the output of the differential amplifier goes to its minimum value, this period of time can be bridged with a peak value rectifier without an appropriate measuring signal.
  • the high-side switch and the low-side switch are each an IGBT or MOSFET.
  • the anode of the high-side diode is connected to the source connection of the MOSFET as the high-side switch or the emitter connection of the IGBT as the high-side switch, and that the cathode of the high-side diode is connected to the drain connection of the MOSFET as the high-side switch or the collector connection of the IGBT as the high-side switch.
  • the anode of the lowside diode is connected to the source connection of the MOSFET as the lowside switch or the emitter connection of the IGBT as the lowside switch, and that the Ka method of the lowside diode is connected to the drain connection of the MOSFET as the lowside switch or the collector connection of the IGBT as the lowside switch.
  • the high-side diode is a body diode of the high-side switch
  • the low-side diode is a body diode of the low-side switch.
  • the measuring device is an analog-digital converter.
  • a microcontroller is arranged between the output of the differential amplifier and the measuring device, which is set up to sample output signals of the differential amplifier at a time.
  • FIG. 1 shows a schematically illustrated embodiment of the gate driver according to the invention
  • FIG. 2 shows a further schematically illustrated embodiment of the gate driver according to the invention
  • FIG. 3 shows a further schematically illustrated embodiment of the gate driver according to the invention.
  • FIG. 4 shows a further schematically illustrated embodiment of the gate driver according to the invention.
  • FIG. 5 shows an exemplary implementation of the embodiment of the gate driver according to the invention according to FIG. 4;
  • FIG. and 6 shows the behavior of the measuring device in the event of a rise and a subsequent fall in the gate supply voltage.
  • the embodiment of the gate driver 100 according to the invention shown in FIG. 1 has a high-side system 20 and a low-side system 10.
  • a high-side switch 12 and a high-side diode 14 are provided in the high-side system 20, and a low-side switch 22 and a low-side diode 24 are provided in the low-side system 10.
  • the high-side switch 12 is connected to the high-side diode 14, and the low-side switch 22 is connected to the low-side diode 24.
  • the interconnected high-side switch 12 and high-side diode 14 and the interconnected low-side switch 22 and low-side diode 24 are connected to a phase connection 8 of the circuit breaker.
  • the low-side system 10 has an analog-digital converter 4 as a measuring device, which is connected to the anode of an intermediate diode 2, the cathode of the intermediate diode 2 being connected to the gate supply voltage of the circuit breaker 12 is.
  • the gate supply voltage 6 to be measured is low, and the supply voltage 30 is sufficiently high, the intermediate diode 2 becomes conductive.
  • An analog-to-digital converter 4 based on the lowside can then, according to the invention, measure the gate supply voltage 6 at the anode of the intermediate diode 2.
  • the embodiment of the gate driver 100 according to the invention shown in FIG. 2 is an addition to the embodiment of the gate driver according to the invention according to FIG. 1.
  • two intermediate diodes 2 are provided, the cathodes of which are connected to the two potentials of the gate supply voltage
  • the high-side system of the circuit breaker and its anodes are connected to the inputs of a differential amplifier, and that the output of the differential amplifier 16 is connected to the analog-digital converter 4.
  • a doubling of the intermediate diode and the insertion of a differential amplifier makes it possible to significantly reduce the falsification of the measurement signal caused by the transmission characteristic of the lowside switch or the lowside diode. It only needs to be ensured that the input voltages of the differential amplifier remain in the permissible common mode range. If the two intermediate diodes 2 are operated at approximately the same operating point, a large part of the error is compensated for by their forward voltage.
  • the embodiment of the gate driver 100 according to the invention shown in FIG. 3 is an addition to the embodiment of the gate driver according to the invention according to FIG. 2.
  • a level shifter 18 is arranged between the cathode of the upper inter mediate diode 2 and the gate terminal 8 of the Circuit breaker.
  • the high gate supply voltage 6 can be brought back into the measurement range by a level shifter 18, for example by adding a constant negative voltage.
  • the embodiment of the gate driver 100 according to the invention shown in FIG. 4 is a supplement to the embodiment of the gate driver according to the invention according to FIG. 3. According to FIG the analog-to-digital converter 4 is arranged.
  • the two intermediate diodes block 2. If the remaining circuitry in the low-side system 10 ensures that the output of the Differential amplifier 16 passes to its minimum value, this period of time without a valid measured value can be bridged with a peak value rectifier 26.
  • FIG. 5 shows an exemplary implementation of the embodiment of the gate driver according to the invention according to FIG. 4.
  • a Zener diode 32 and a resistor 34 of 1k ohms are provided in order to allow a negative voltage to be added to the input voltages can remain in the common mode area of the differential amplifier.
  • the diode 2a is a decoupling diode for comparison signals of the differential amplifier 16, and the diode 2b is a decoupling diode for measurement signals.
  • the resistance was 36 of 10k ohms and the resistor 38 of 10k ohms, a base current for the diodes 2a, 2b is possible.
  • the arrangement with the resistor 42 of 100 ohms and the resistor 44 of 10k ohms causes a more negative voltage at the non-inverting input for the period in which the low-side is blocked, so that the output of the differential amplifier 16 jumps to the minimum value.
  • the differential amplifier 16 is designed with a peak value rectifier, including a first suggestion for filtering dynamic voltage overshoots between the phase connection and the reference ground of the measuring system (differential amplifier and ADC), which typically occur when the circuit breaker is switched.
  • the upper curve 70 shown in Fig. 6 represents the gate supply voltage to be measured of a circuit breaker and is varied positively and subsequently negatively over a sufficiently large voltage range to demonstrate the functional principle, and the lower curve 80 shown in Fig. 6 represents accordingly represents the voltage measured by the analog-to-digital converter 4.
  • the axis of abscissa is time while the axis of ordinate is voltages. It can be seen from curve 70 that the gate supply voltage to be measured increases from 14 V to 20 V within the first 10 ms and decreases back to 14 V within the following 10 ms.
  • an evaluation of a digital signal is also possible.
  • a microcontroller can also sample the signal at the appropriate point in time.

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Abstract

The invention relates to a gate driver for controlling a power switch, in particular a bipolar transistor with insulated gate electrode, IGBT, or a power MOSFET, with a high-side system and a low-side system. A high-side switch and a high-side diode are provided in the high-side system, and a low-side switch and a low-side diode are provided in the low-side system. The high-side switch is connected to the high-side diode, and the low-side switch is connected to the low-side diode. The interconnected high-side switch and high-side diode and the interconnected low-side switch and low-side diode are connected to a phase connector of the power switch. For measurement of a voltage the low-side system has a measuring device which is connected to the anode of at least one intermediate diode, the cathode of which is connected to the voltage to be measured in the high-side system of the power switch.

Description

Beschreibung description

Titel title

Gate-Treiber zur Ansteuerung eines Leistungsschalters Gate driver for controlling a circuit breaker

Die Erfindung betrifft einen Gate-Treiber zur Ansteuerung eines Leistungsschal ters. The invention relates to a gate driver for driving a power switch.

Stand der Technik State of the art

Für den Betrieb von Elektro-Antrieben in Hybrid und/oder Elektro- Fahrzeugen werden zur Ansteuerung von elektrischen Maschinen Pulswechselrichter einge setzt, die eine Eingangsgleichspannung in ein dreiphasiges Ausgangsspannung system mit veränderlicher Amplitude und/oder Frequenz umsetzen. For the operation of electric drives in hybrid and / or electric vehicles, pulse inverters are used to control electrical machines, which convert an input DC voltage into a three-phase output voltage system with variable amplitude and / or frequency.

Für die Ansteuerung der entsprechenden Schaltelemente (z.B. IGBT oder Leis- tungs-FETs) sind Versorgungssysteme der Gateansteuerung erforderlich. Die positive Gate-Versorgungsspannung muss relativ eng toleriert werden. Eine zu hohe positive Gatespannung führt z.B. im Kurzschlussfall eines Schaltelementes zu einem nicht mehr beherrschbaren Kurzschlussstrom bzw. zu einer Schädi gung des Gates. Eine zu niedrige positive Gatespannung bewirkt z.B. zu große Durchlassverluste und eine Erhöhung der Schaltverluste. To control the corresponding switching elements (e.g. IGBT or power FETs), supply systems for gate control are required. The positive gate supply voltage must be tolerated relatively closely. If the positive gate voltage is too high, e.g. in the event of a short circuit in a switching element, this will result in a short circuit current that is no longer controllable or in damage to the gate. If the positive gate voltage is too low, the on-state losses are too high and the switching losses increase.

Auch für die negative Gatespannung bestehen mit der positiven Gatespannung vergleichbare Beschränkungen. There are also restrictions for the negative gate voltage that are comparable to those for the positive gate voltage.

Bisher sind diese Anforderungen durch entsprechende Spannungsregler erfüllt worden, beispielsweise durch nachgeschaltete Linearregler. So far, these requirements have been met by appropriate voltage regulators, for example by downstream linear regulators.

Die Druckschrift DE 10 2017 104983 Al offenbart ein Fahrzeug umfassend eine Elektromaschine, einen IGBT und einen Gate-Treiber. Der IGBT weist ein Gate, einen Emitter und einen Kollektor auf und ist zum Leiten einer elektrischen La dung durch eine Phase der Elektromaschine konfiguriert. Der Gate-Treiber ist zum Leiten von Strom auf das Gate bei einem ersten Pegel und, als Reaktion da rauf, dass ein Zeitintegral einer Spannung über die Phase einen vorbestimmten Pegel überschreitet, zum Überleiten von dem ersten Pegel zu einem zweiten Pe gel, der geringer als der erste Pegel ist, konfiguriert. The document DE 10 2017 104983 A1 discloses a vehicle comprising an electric machine, an IGBT and a gate driver. The IGBT has a gate, an emitter and a collector and is configured to pass an electrical charge through a phase of the electrical machine. The gate driver is for conducting current to the gate at a first level and, in response to a time integral of a voltage across the phase exceeding a predetermined level, for transitioning from the first level to a second level which is less configured as the first level.

Aus der Druckschrift DE 10 2018 100 460 Al ist ein Stromversorgungssystem für Fahrzeuge bekannt, das einen Gate-Treiber beinhalten kann, der dazu konfigu riert ist, ein Traktions- Gate und ein Generator-Gate anzusteuern, die Schaltern eines regelbaren Spannungswandlers entsprechen, so dass die Gates alternie rende EIN-Perioden der Impulsbreitenmodulation aufweisen. Die Gates können als Reaktion darauf, dass eine Durchsatzgröße einen Schwellenwert unterschrei tet, angesteuert werden. Der Gate-Treiber kann ferner dazu konfiguriert sein, die Gates so anzusteuern, dass ein Tastverhältnis von einem der Gates als Reaktion darauf, dass der Durchsatz den Schwellenwert überschreitet, null ist. From the publication DE 10 2018 100 460 A1 a power supply system for vehicles is known that can include a gate driver that is configured to control a traction gate and a generator gate, which correspond to switches of a controllable voltage converter, so that the gates have alternating ON periods of pulse width modulation. The gates can be activated in response to the fact that a throughput value falls below a threshold value. The gate driver may further be configured to drive the gates such that a duty cycle of one of the gates in response to the throughput exceeding the threshold is zero.

Offenbarung der Erfindung Disclosure of the invention

Die vorliegende Erfindung schafft einen Gate-Treiber zur Ansteuerung eines Leistungsschalters nach Anspruch 1. The present invention provides a gate driver for driving a circuit breaker according to claim 1.

Bevorzugte Weiterbildungen sind Gegenstand der Unteransprüche. Preferred further developments are the subject of the subclaims.

Vorteile der Erfindung Advantages of the invention

Die Erfindung betrifft einen Gate-Treiber zur Ansteuerung eines Leistungsschal ters, insbesondere eines Bipolartransistors mit isolierter Gate- Elektrode, IGBT, oder eines Leistungs-MOSFET, mit einem Highside-System und einem Lowside- System. In dem Highside-System sind ein Highside-Schalter und eine Highside- Diode vorgesehen, und in dem Lowside-System sind ein Lowside-Schalter und eine Lowside-Diode vorgesehen. Der Highside-Schalter ist mit der Highside- Diode verbunden, und der Lowside-Schalter ist mit der Lowside-Diode verbun den. Die miteinander verbundenen Highside-Schalter und Highside-Diode und die miteinander verbundenen Lowside-Schalter und Lowside-Diode sind an einen Phasen-Anschluss des Leistungsschalters angeschlossen. Das Lowside-System weist zur Messung einer Spannung eine Messeinrichtung auf, die an die Anode mindestens einer Zwischen-Diode angeschlossen ist, deren Kathode an die Ga te-Versorgungsspannung des Highside-Leistungsschalters angeschlossen ist. The invention relates to a gate driver for controlling a power switch, in particular a bipolar transistor with an insulated gate electrode, IGBT, or a power MOSFET, with a high-side system and a low-side system. A high-side switch and a high-side diode are provided in the high-side system, and a low-side switch and a low-side diode are provided in the low-side system. The high-side switch is connected to the high-side diode, and the low-side switch is connected to the low-side diode. The interconnected high-side switch and high-side diode and the interconnected low-side switch and low-side diode are connected to one Phase connection of the circuit breaker connected. To measure a voltage, the low-side system has a measuring device which is connected to the anode of at least one intermediate diode, the cathode of which is connected to the Ga te supply voltage of the high-side circuit breaker.

Erfindungsgemäß ist es möglich, eine auf das Highside-System bezogene Gate- Versorgungsspannung bzw. andere auf das Highside-System bezogene Span nungen durch eine auf das Lowside-System bezogene Messeinrichtung zu mes sen. Dadurch kann eine durch z.B. einen Linearregler oder Schaltregler vor Ort vorgenommene aufwändige Spannungsregelung für eng tolerierte Versorgungs spannungen erspart werden bzw. kann durch diese Sensorik eine Diagnose oder eine Regelbarkeit der Spannung erreicht werden. According to the invention, it is possible to measure a gate supply voltage related to the high-side system or other voltages related to the high-side system by a measuring device related to the low-side system. As a result, a complex voltage regulation carried out on site by a linear regulator or switching regulator for tightly tolerated supply voltages can be saved, or a diagnosis or controllability of the voltage can be achieved using these sensors.

Eine auf das gemeinsame Massepotential der 3 Lowside-Systeme bezogene Messeinrichtung ist bei einem herkömmlichen Gate-Treiber oft zu sehen, denn diese kann relativ kostengünstig eine Vielzahl von Mess- und/oder Steueraufga ben aller drei Phasen durchführen. A measuring device related to the common ground potential of the 3 lowside systems can often be seen in a conventional gate driver, because it can perform a large number of measuring and / or control tasks in all three phases relatively inexpensively.

Erfindungsgemäß wird dies ausgenutzt, um eine einfache und kostengünstige Lösung zur Messung bzw. Überwachung der Gate-Versorgungsspannung eines Leistungsschalters im Highside-System zu realisieren. According to the invention, this is used to implement a simple and inexpensive solution for measuring or monitoring the gate supply voltage of a circuit breaker in the high-side system.

Bei einer kleinen Durchlassspannung des Lowside-Schalters, einer ausreichend kleinen zu messender Gateversorgungsspannung im Highside-System und einer ausreichend hohen Versorgungsspannung im Lowside-System wird die Zwi schen-Diode leitend. Eine auf das Lowside System bezogene Messeinrichtung kann erfindungsgemäß dann, während der Zeit, in der der Lowside-Schalter oder die Lowside-Diode leitend ist, die Gateversorgungsspannung im Highside- System an der Anode der Zwischen-Diode messen. With a low forward voltage of the lowside switch, a sufficiently low gate supply voltage to be measured in the highside system and a sufficiently high supply voltage in the lowside system, the intermediate diode becomes conductive. A measuring device related to the lowside system can then, according to the invention, measure the gate supply voltage in the highside system at the anode of the intermediate diode during the time in which the lowside switch or the lowside diode is conductive.

In einer bevorzugten Ausführungsform des erfindungsgemäßen Gate-Treibers ist es vorgesehen, dass die mindestens eine Zwischen-Diode zwei Zwischen- Dioden ist, deren Kathoden an die beiden Potentiale der Gateversorgungsspan nung im Highside-System des Leistungsschalters und deren Anoden an die Ein- gänge eines Differenzverstärkers angeschlossen sind, und dass der Ausgang des Differenzverstärkers an die Messeinrichtung angeschlossen ist. In a preferred embodiment of the gate driver according to the invention, it is provided that the at least one intermediate diode is two intermediate diodes, the cathodes of which are connected to the two potentials of the gate supply voltage in the high-side system of the circuit breaker and their anodes to the input outputs of a differential amplifier are connected, and that the output of the differential amplifier is connected to the measuring device.

Bei der vorliegenden Messung einer Spannung im Highside-System bestehen unter anderem folgende Verfälschungen: Die Durchlassspannung des Lowside- Schalters und/oder der Lowside-Diode verfälscht das Messsignal und die Durch- lasspannung der Zwischen-Diode verfälscht das Messsignal. Die sich durch die se Vorgehensweise ergebenden Verfälschungen können wie folgt kompensiert werden: The present measurement of a voltage in the high-side system includes the following falsifications: The forward voltage of the lowside switch and / or the lowside diode falsifies the measurement signal and the forward voltage of the intermediate diode falsifies the measurement signal. The falsifications resulting from this procedure can be compensated as follows:

Eine Dopplung der Zwischen-Diode und die Einfügung eines Differenzverstärkers ermöglicht, diese Verfälschungen wesentlich zu reduzieren. Es muss nur noch sichergestellt werden, dass die Eingangsspannungen des Differenzverstärkers im zulässigen Common Mode Bereich verbleiben. A doubling of the intermediate diode and the insertion of a differential amplifier make it possible to significantly reduce these falsifications. It only needs to be ensured that the input voltages of the differential amplifier remain in the permissible common mode range.

Werden die beiden Zwischen-Dioden näherungsweise im gleichen Arbeitspunkt betrieben, kompensiert sich ein Großteil des Fehlers durch die Kennlinientole ranz der Durchlassspannung der Zwischen-Dioden. If the two intermediate diodes are operated at approximately the same operating point, a large part of the error is compensated for by the characteristic tolerance of the forward voltage of the intermediate diodes.

In einer weiteren bevorzugten Ausführungsform des erfindungsgemäßen Gate- Treibers ist es vorgesehen, dass zwischen der Kathode der mindestens einen Zwischen-Diode und dem Gate-Anschluss des Leistungsschalters ein Levelshif- ter angeordnet ist. In a further preferred embodiment of the gate driver according to the invention, it is provided that a level shifter is arranged between the cathode of the at least one intermediate diode and the gate connection of the power switch.

Bei der Messung der Gateversorgungsspannung besteht zudem die Problematik, dass bei einer hohen Gateversorgungsspannung im Highside-System keine Messung mehr erfolgen kann. Um dies zu vermeiden, kann die hohe Gatever sorgungsspannung durch einen Levelshifter, beispielweise durch Addition einer konstanten negativen Spannung beispielsweise durch eine Zenerdiode, wieder in den Messbereich gebracht werden. Ein Levelshifter ist eine Schaltung, die ver wendet wird, um Signalinformationen von einem Spannungsbereich in einen an deren zu übersetzen, wodurch die Kompatibilität zwischen integrierten Schaltun gen mit unterschiedlichen Spannungsanforderungen ermöglicht wird. In einer weiteren bevorzugten Ausführungsform des erfindungsgemäßen Gate- Treibers ist es vorgesehen, dass der Differenzverstärker einen Spitzenwert gleichrichter aufweist, der zwischen dem Ausgang des Differenzverstärkers und der Messeinrichtung angeordnet ist. When measuring the gate supply voltage, there is also the problem that when the gate supply voltage is high in the high-side system, measurements can no longer be made. To avoid this, the high gate supply voltage can be brought back into the measuring range by a level shifter, for example by adding a constant negative voltage, for example by a Zener diode. A level shifter is a circuit that is used to translate signal information from one voltage range to another, thereby enabling compatibility between integrated circuits with different voltage requirements. In a further preferred embodiment of the gate driver according to the invention it is provided that the differential amplifier has a peak value rectifier which is arranged between the output of the differential amplifier and the measuring device.

Bei der vorliegenden Messung der Gateversorgungsspannung besteht außerdem die Problematik, dass nur während der Zeit, in der der Lowside-Schalter oder die Lowside- Diode leitend ist, das Messsignal zutreffend ist. In the present measurement of the gate supply voltage, there is also the problem that the measurement signal is correct only during the time in which the lowside switch or the lowside diode is conductive.

In der Zeitphase, in der der Highside-Schalter oder die Highside-Diode leitend ist, sperren die beiden Zwischen-Dioden. Wenn durch die verbleibende Beschaltung im Lowside-System gewährleistet wird, dass der Ausgang des Differenzverstär kers auf seinen Minimalwert übergeht, kann mit einem Spitzenwertgleichrichter diese Zeitdauer ohne zutreffendes Messsignal überbrückt werden. In the time phase in which the high-side switch or the high-side diode is conductive, the two intermediate diodes block. If the remaining wiring in the lowside system ensures that the output of the differential amplifier goes to its minimum value, this period of time can be bridged with a peak value rectifier without an appropriate measuring signal.

In einer weiteren bevorzugten Ausführungsform des erfindungsgemäßen Gate- Treibers ist es vorgesehen, dass der Highside-Schalter und der Lowside-Schalter jeweils ein IGBT oder MOSFET ist. In a further preferred embodiment of the gate driver according to the invention, it is provided that the high-side switch and the low-side switch are each an IGBT or MOSFET.

In einer weiteren bevorzugten Ausführungsform des erfindungsgemäßen Gate- Treibers ist es vorgesehen, dass die Anode der Highside-Diode mit dem Source- Anschluss des MOSFETs als des Highside-Schalters bzw. dem Emitter- Anschluss des IGBT als des Highside-Schalters verbunden ist, und dass die Ka thode der Highside-Diode mit dem Drain-Anschluss des MOSFETs als des Highside-Schalters bzw. dem Kollektor-Anschluss des IGBT als des Highside- Schalters verbunden ist. In a further preferred embodiment of the gate driver according to the invention it is provided that the anode of the high-side diode is connected to the source connection of the MOSFET as the high-side switch or the emitter connection of the IGBT as the high-side switch, and that the cathode of the high-side diode is connected to the drain connection of the MOSFET as the high-side switch or the collector connection of the IGBT as the high-side switch.

In einer weiteren bevorzugten Ausführungsform des erfindungsgemäßen Gate- Treibers ist es vorgesehen, dass die Anode der Lowside-Diode mit dem Source- Anschluss des MOSFETs als des Lowside-Schalters bzw. dem Emitter- Anschluss des IGBT als des Lowside-Schalters verbunden ist, und dass die Ka thode der Lowside-Diode mit dem Drain-Anschluss des MOSFETs als des Lowside-Schalters bzw. dem Kollektor-Anschluss des IGBT als des Lowside- Schalters verbunden ist. In einer weiteren bevorzugten Ausführungsform des erfindungsgemäßen Gate- Treibers ist es vorgesehen, dass die Highside-Diode eine Body-Diode des Highside-Schalters ist, und wobei die Lowside-Diode eine Body-Diode des Lowside-Schalters ist. In a further preferred embodiment of the gate driver according to the invention it is provided that the anode of the lowside diode is connected to the source connection of the MOSFET as the lowside switch or the emitter connection of the IGBT as the lowside switch, and that the Ka method of the lowside diode is connected to the drain connection of the MOSFET as the lowside switch or the collector connection of the IGBT as the lowside switch. In a further preferred embodiment of the gate driver according to the invention, it is provided that the high-side diode is a body diode of the high-side switch, and the low-side diode is a body diode of the low-side switch.

In einer weiteren bevorzugten Ausführungsform des erfindungsgemäßen Gate- Treibers ist es vorgesehen, dass die Messeinrichtung ein Analog-Digital-Wandler ist. In a further preferred embodiment of the gate driver according to the invention, it is provided that the measuring device is an analog-digital converter.

In einer weiteren bevorzugten Ausführungsform des erfindungsgemäßen Gate- Treibers ist es vorgesehen, dass zwischen dem Ausgang des Differenzverstär kers und der Messeinrichtung ein Mikrocontroller angeordnet ist, der so einge richtet ist, Ausgangssignale des Differenzverstärkers zu einem Zeitpunkt abzu tasten. In a further preferred embodiment of the gate driver according to the invention it is provided that a microcontroller is arranged between the output of the differential amplifier and the measuring device, which is set up to sample output signals of the differential amplifier at a time.

Kurze Beschreibung der Zeichnungen Brief description of the drawings

Die vorliegende Erfindung wird nachfolgend anhand der in den schematischen Figuren angegebenen Ausführungsbeispiele näher erläutert. Es zeigen: The present invention is explained in more detail below with reference to the exemplary embodiments specified in the schematic figures. Show it:

Fig. 1 eine schematisch dargestellte Ausführungsform des erfindungsge mäßen Gate-Treibers; 1 shows a schematically illustrated embodiment of the gate driver according to the invention;

Fig. 2 eine weitere schematisch dargestellte Ausführungsform des erfin dungsgemäßen Gate-Treibers; 2 shows a further schematically illustrated embodiment of the gate driver according to the invention;

Fig. 3 eine weitere schematisch dargestellte Ausführungsform des erfin dungsgemäßen Gate-Treibers; 3 shows a further schematically illustrated embodiment of the gate driver according to the invention;

Fig. 4 eine weitere schematisch dargestellte Ausführungsform des erfin dungsgemäßen Gate-Treibers; 4 shows a further schematically illustrated embodiment of the gate driver according to the invention;

Fig. 5 eine exemplarische Umsetzungsmöglichkeit der Ausführungsform des erfindungsgemäßen Gate-Treibers nach Fig. 4; und Fig. 6 das Verhalten der Messeinrichtung bei einem Anstieg und einem da rauf folgenden Abfall der Gateversorgungsspannung. FIG. 5 shows an exemplary implementation of the embodiment of the gate driver according to the invention according to FIG. 4; FIG. and 6 shows the behavior of the measuring device in the event of a rise and a subsequent fall in the gate supply voltage.

Ausführungsformen der Erfindung Embodiments of the invention

In den Figuren bezeichnen gleiche Bezugszeichen gleiche bzw. funktionsgleiche Elemente. In the figures, identical reference symbols denote identical or functionally identical elements.

Die in Fig. 1 dargestellte Ausführungsform des erfindungsgemäßen Gate- Treibers 100 weist ein Highside-System 20 und ein Lowside-System 10 auf. In dem Highside-System 20 sind ein Highside-Schalter 12 und eine Highside-Diode 14 vorgesehen, und in dem Lowside-System 10 sind ein Lowside-Schalter 22 und eine Lowside-Diode 24 vorgesehen. Der Highside-Schalter 12 ist mit der Highside-Diode 14 verbunden, und der Lowside-Schalter 22 ist mit der Lowside- Diode 24 verbunden. Die miteinander verbundenen Highside-Schalter 12 und Highside-Diode 14 und die miteinander verbundenen Lowside-Schalter 22 und Lowside-Diode 24 sind an einen Phasen-Anschluss 8 des Leistungsschalters an geschlossen. Das Lowside-System 10 weist zur Messung einer Spannung einen Analog-Digital-Wandler 4 als Messeinrichtung auf, der an die Anode einer Zwi- schen-Diode 2 angeschlossen ist, wobei die Kathode der Zwischen-Diode 2 an der Gateversorgungsspannung des Leistungsschalters 12 angeschlossen ist. The embodiment of the gate driver 100 according to the invention shown in FIG. 1 has a high-side system 20 and a low-side system 10. A high-side switch 12 and a high-side diode 14 are provided in the high-side system 20, and a low-side switch 22 and a low-side diode 24 are provided in the low-side system 10. The high-side switch 12 is connected to the high-side diode 14, and the low-side switch 22 is connected to the low-side diode 24. The interconnected high-side switch 12 and high-side diode 14 and the interconnected low-side switch 22 and low-side diode 24 are connected to a phase connection 8 of the circuit breaker. To measure a voltage, the low-side system 10 has an analog-digital converter 4 as a measuring device, which is connected to the anode of an intermediate diode 2, the cathode of the intermediate diode 2 being connected to the gate supply voltage of the circuit breaker 12 is.

Bei einer kleinen Durchlassspannung des Lowside-Schalters 22, einer kleinen zu messender Gateversorgungsspannung 6 und einer ausreichend hohen Versor gungsspannung 30 wird die Zwischen-Diode 2 leitend. Ein auf das Lowside be zogener Analog-Digital-Wandler 4 kann erfindungsgemäß dann die Gateversor gungsspannung 6 an der Anode der Zwischen-Diode 2 messen. If the forward voltage of the low-side switch 22 is low, the gate supply voltage 6 to be measured is low, and the supply voltage 30 is sufficiently high, the intermediate diode 2 becomes conductive. An analog-to-digital converter 4 based on the lowside can then, according to the invention, measure the gate supply voltage 6 at the anode of the intermediate diode 2.

Die in Fig. 2 dargestellte Ausführungsform des erfindungsgemäßen Gate- Treibers 100 ist eine Ergänzung zur Ausführungsform des erfindungsgemäßen Gate-Treibers nach Fig. 1. Nach Fig. 2 sind zwei Zwischen-Dioden 2 vorgese hen, deren Kathoden an die beiden Potentiale der Gateversorgungsspannung im Highside-System des Leistungsschalters und deren Anoden an die Eingänge ei nes Differenzverstärkers angeschlossen sind, und dass der Ausgang des Diffe renzverstärkers 16 an den Analog-Digital-Wandler 4 angeschlossen ist. Eine Dopplung der Zwischen-Diode und die Einfügung eines Differenzverstärkers ermöglicht, die Verfälschung des Messsignales durch die Durchlasskennlinie des Lowside-Schalters bzw. der Lowside-Diode wesentlich zu reduzieren. Es muss nur noch sichergestellt werden, dass die Eingangsspannungen des Differenzver stärkers im zulässigen Common Mode Bereich verbleiben. Werden die beiden Zwischen-Dioden 2 näherungsweise im gleichen Arbeitspunkt betrieben, kom pensiert sich ein Großteil des Fehlers durch ihre Durchlassspannung. The embodiment of the gate driver 100 according to the invention shown in FIG. 2 is an addition to the embodiment of the gate driver according to the invention according to FIG. 1. According to FIG. 2, two intermediate diodes 2 are provided, the cathodes of which are connected to the two potentials of the gate supply voltage The high-side system of the circuit breaker and its anodes are connected to the inputs of a differential amplifier, and that the output of the differential amplifier 16 is connected to the analog-digital converter 4. A doubling of the intermediate diode and the insertion of a differential amplifier makes it possible to significantly reduce the falsification of the measurement signal caused by the transmission characteristic of the lowside switch or the lowside diode. It only needs to be ensured that the input voltages of the differential amplifier remain in the permissible common mode range. If the two intermediate diodes 2 are operated at approximately the same operating point, a large part of the error is compensated for by their forward voltage.

Die in Fig. 3 dargestellte Ausführungsform des erfindungsgemäßen Gate- Treibers 100 ist eine Ergänzung zur Ausführungsform des erfindungsgemäßen Gate-Treibers nach Fig. 2. Nach Fig. 3 ist zwischen der Kathode der oberen Zwi schen-Diode 2 und dem Gate-Anschluss 8 des Leistungsschalters ein Levelshif- ter 18 angeordnet. The embodiment of the gate driver 100 according to the invention shown in FIG. 3 is an addition to the embodiment of the gate driver according to the invention according to FIG. 2. According to FIG. 3, between the cathode of the upper inter mediate diode 2 and the gate terminal 8 of the Circuit breaker a level shifter 18 is arranged.

Bei der Messung der Gateversorgungsspannung 6 besteht zudem die Problema tik, dass bei einer hohen Gateversorgungsspannung im Highside-System keine Messung mehr erfolgen kann When measuring the gate supply voltage 6, there is also the problem that when the gate supply voltage is high in the high-side system, no further measurements can be made

Um dies zu vermeiden, kann die hohe Gateversorgungsspannung 6 durch einen Levelshifter 18, beispielweise durch Addition einer konstanten negativen Span nung, wieder in den Messbereich gebracht werden. To avoid this, the high gate supply voltage 6 can be brought back into the measurement range by a level shifter 18, for example by adding a constant negative voltage.

Die in Fig. 4 dargestellte Ausführungsform des erfindungsgemäßen Gate- Treibers 100 ist eine Ergänzung zur Ausführungsform des erfindungsgemäßen Gate-Treibers nach Fig. 3. Nach Fig. 4 weist der Differenzverstärker 16 einen Spitzenwertgleichrichter 26 auf, der zwischen dem Ausgang des Differenzver stärkers 16 und dem Analog-Digital-Wandler 4 angeordnet ist. The embodiment of the gate driver 100 according to the invention shown in FIG. 4 is a supplement to the embodiment of the gate driver according to the invention according to FIG. 3. According to FIG the analog-to-digital converter 4 is arranged.

Bei der vorliegenden Messung der Gateversorgungsspannung besteht außerdem die Problematik, dass nur während der Zeit, in der der Lowside-Schalter oder die Lowside-Diode leitend ist, das Messsignal zutreffend ist. In the present measurement of the gate supply voltage, there is also the problem that the measurement signal is correct only during the time in which the lowside switch or the lowside diode is conductive.

In der Zeitphase, in der der Highside-Schalter 12 oder die Highside-Diode 14 lei tend ist, sperren die beiden Zwischen-Dioden 2. Wenn durch die verbleibende Beschaltung im Lowside-System 10 gewährleistet wird, dass der Ausgang des Differenzverstärkers 16 auf seinen Minimalwert übergeht, kann mit einem Spit zenwertgleichrichter 26 diese Zeitdauer ohne gültigen Messwert überbrückt wer den. In the time phase in which the high-side switch 12 or the high-side diode 14 is conductive, the two intermediate diodes block 2. If the remaining circuitry in the low-side system 10 ensures that the output of the Differential amplifier 16 passes to its minimum value, this period of time without a valid measured value can be bridged with a peak value rectifier 26.

Fig. 5 zeigt eine exemplarische Umsetzungsmöglichkeit der Ausführungsform des erfindungsgemäßen Gate-Treibers nach Fig. 4. Gemäß Fig. 5 sind eine Z- Diode 32 und ein Widerstand 34 von lk Ohm vorgesehen, um eine Addition einer negative Spannung zu ermöglichen, damit die Eingangsspannungen in den Common-Mode-Bereich des Differenzverstärkers verbleiben können. Die Diode 2a ist eine Entkopplungsdiode für Vergleichssignale des Differenzverstärkers 16, und die Diode 2b ist eine Entkopplungsdiode für Messsignale. Durch den Wider stand 36 von 10k Ohm und den Widerstand 38 von 10k Ohm ist ein Basis-Strom für die Dioden 2a, 2b möglich. Die Anordnung mit dem Widerstand 42 von 100 Ohm und dem Widerstand 44 von 10k Ohm bewirkt eine negativere Spannung am nichtinvertierenden Eingang für die Zeitdauer, in der der Low-Side gesperrt ist, so dass der Ausgang des Differenzverstärkers 16 auf den Minimalwert springt. FIG. 5 shows an exemplary implementation of the embodiment of the gate driver according to the invention according to FIG. 4. According to FIG. 5, a Zener diode 32 and a resistor 34 of 1k ohms are provided in order to allow a negative voltage to be added to the input voltages can remain in the common mode area of the differential amplifier. The diode 2a is a decoupling diode for comparison signals of the differential amplifier 16, and the diode 2b is a decoupling diode for measurement signals. The resistance was 36 of 10k ohms and the resistor 38 of 10k ohms, a base current for the diodes 2a, 2b is possible. The arrangement with the resistor 42 of 100 ohms and the resistor 44 of 10k ohms causes a more negative voltage at the non-inverting input for the period in which the low-side is blocked, so that the output of the differential amplifier 16 jumps to the minimum value.

Mit dem Widerstand 46 von 2k Ohm, dem Widerstand 48 von 2k Ohm, dem Wi derstand 52 von 20k Ohm, dem Widerstand 54 von 20k Ohm, dem Widerstand 56 von 22k Ohm und dem Widerstand 66 von 10k Ohm, sowie LM2902 als Diffe renzverstärker, der Diode 62 und dem Kondensator 64 von 1 nF ist der Diffe renzverstärker 16 mit einem Spitzenwertgleichrichter ausgebildet, incl. einem ers ten Vorschlag zur Filterung dynamischer Spannungsüberschwinger zwischen Phasenanschluss und Bezugsmasse des Messsystems (Differenzverstärker und ADC), die typischerweise beim Schalten des Leistungsschalters auftreten. With resistor 46 of 2k ohms, resistor 48 of 2k ohms, resistor 52 of 20k ohms, resistor 54 of 20k ohms, resistor 56 of 22k ohms and resistor 66 of 10k ohms, as well as LM2902 as a differential amplifier, the diode 62 and the capacitor 64 of 1 nF, the differential amplifier 16 is designed with a peak value rectifier, including a first suggestion for filtering dynamic voltage overshoots between the phase connection and the reference ground of the measuring system (differential amplifier and ADC), which typically occur when the circuit breaker is switched.

Die in Fig. 6 gezeigte obere Kurve 70 stellt die zu messende Gateversorgungs spannung eines Leistungsschalters dar und wird zum Nachweis des Funktions prinzips über einen ausreichend großen Spannungsbereich positiv und darauf folgend negativ variiert, und die in Fig. 6 gezeigte untere Kurve 80 stellt dement sprechend die durch den Analog-Digital-Wandler 4 gemessene Spannung dar.The upper curve 70 shown in Fig. 6 represents the gate supply voltage to be measured of a circuit breaker and is varied positively and subsequently negatively over a sufficiently large voltage range to demonstrate the functional principle, and the lower curve 80 shown in Fig. 6 represents accordingly represents the voltage measured by the analog-to-digital converter 4.

Die Abszissenachse ist die Zeit, während die Ordinatenachse die Spannungen ist. Aus der Kurve 70 ist ersichtlich, dass sich die zu messende Gateversorgungs spannung innerhalb der ersten 10 ms von 14 V auf 20 V erhöht und innerhalb der darauf folgenden 10 ms zurück auf 14 V verringert. The axis of abscissa is time while the axis of ordinate is voltages. It can be seen from curve 70 that the gate supply voltage to be measured increases from 14 V to 20 V within the first 10 ms and decreases back to 14 V within the following 10 ms.

Aus der Kurve 80 ist klar, dass der Anstieg der zu messenden Gateversorgungs spannung um 6 V durch den Analog-Digital-Wandler 4 auf dem Lowside-System korrekt ausgewertet wird, und dass beim Abfall sich durch die Spitzenwertgleich richtung eine geringe Verzögerung ergibt. Jedoch ist bei der hier zu erwartenden zeitlichen Variation der Gateversorgungsspannung diese Verzögerung nicht rele vant. It is clear from curve 80 that the increase in the gate supply voltage to be measured by 6 V is correctly evaluated by the analog-to-digital converter 4 on the low-side system, and that there is a slight delay in the decrease due to the peak value rectification. However, this delay is not relevant in the case of the temporal variation of the gate supply voltage to be expected here.

In einer nicht dargestellten Ausführungsform ist es vorgesehen, die Auswertung auf einem Highside-System zu platzieren und eine Hilfsspannung auf dem Lowside-System zu überwachen. In an embodiment that is not shown, provision is made for the evaluation to be placed on a high-side system and for an auxiliary voltage to be monitored on the low-side system.

In einer weiteren nicht dargestellten Ausführungsform ist eine Auswertung eines digitalen Signales auch möglich. In a further embodiment, not shown, an evaluation of a digital signal is also possible.

In einer weiteren nicht dargestellten Ausführungsform kann anstelle der Spitzen wert-Erfassung auch ein Mikrocontroller das Signal zum geeigneten Zeitpunkt abtasten. In a further embodiment not shown, instead of the peak value detection, a microcontroller can also sample the signal at the appropriate point in time.

Obwohl die vorliegende Erfindung anhand bevorzugter Ausführungsbeispiele vorstehend vollständig beschrieben wurde, ist sie darauf nicht beschränkt, son dern auf vielfältige Art und Weise modifizierbar. Although the present invention has been fully described above on the basis of preferred exemplary embodiments, it is not restricted thereto, but can be modified in many different ways.

Claims

Patentansprüche: Patent claims: 1. Gate-Treiber (100) zur Ansteuerung eines Leistungsschalters, insbe sondere eines Bipolartransistors mit isolierter Gate- Elektrode, IGBT, oder eines Leistungs-MOSFET, mit einem Highside-System (20) und einem Lowside- System (10), wobei in dem Highside-System (20) ein Highside-Schalter (12), eine Highside- Diode (14) und in dem Lowside-System (10) ein Lowside-Schalter (22), eine Lowside-Diode (24) vorgesehen sind, wobei der Highside-Schalter (12) mit der Highside-Diode (14) und der Lowside- Schalter (22) mit der Lowside-Diode (24) verbunden ist, wobei die miteinander verbundenen Highside-Schalter (12) und Highside-Diode (14) und die miteinander verbundenen Lowside-Schalter (22) und Lowside-Diode (24) an einen Phasen-Anschluss (8) des Leistungsschalters angeschlossen sind, und wobei das Lowside-System (10) zur Messung einer Spannung eine Messeinrich tung (4) aufweist, die an die Anode mindestens einer Zwischen-Diode (2) ange schlossen ist, deren Kathode auch an der Gateversorgungspannung (6) des Highside-Leistungsschalters angeschlossen ist. 1. Gate driver (100) for controlling a power switch, in particular a special bipolar transistor with an insulated gate electrode, IGBT, or a power MOSFET, with a high-side system (20) and a low-side system (10), wherein in the high-side system (20) a high-side switch (12), a high-side diode (14) and a low-side switch (22), a low-side diode (24) are provided in the low-side system (10), wherein the high-side switch (12) is connected to the high-side diode (14) and the low-side switch (22) is connected to the low-side diode (24), the high-side switch (12) and high-side diode (14 ) and the interconnected lowside switch (22) and lowside diode (24) are connected to a phase connection (8) of the circuit breaker, and wherein the lowside system (10) has a measuring device (4) for measuring a voltage has, which is connected to the anode at least one intermediate diode (2), the cathode of which is also connected to the gate supply voltage ung (6) of the high-side circuit breaker is connected. 2. Gate-Treiber nach Anspruch 1, wobei die mindestens eine Zwischen- Diode (2) zwei Zwischen-Dioden (2, 2a, 2b) sind, deren Kathoden an die beiden Potentiale der Gateversorgungsspannung im Highside-System des Leistungs schalters und deren Anoden an die Eingänge eines Differenzverstärkers ange schlossen sind, und dass der Ausgang des Differenz Verstärkers an die Messein richtung angeschlossen ist. 2. Gate driver according to claim 1, wherein the at least one intermediate diode (2) are two intermediate diodes (2, 2a, 2b), the cathodes of which are connected to the two potentials of the gate supply voltage in the high-side system of the power switch and their anodes are connected to the inputs of a differential amplifier, and that the output of the differential amplifier is connected to the measuring device. 3. Gate-Treiber nach Anspruch 1 oder 2, wobei zwischen der Kathode der mindestens einen Zwischen-Diode (2) und der zu messenden Spannung im HighSide System (6) ein Level-shifter (18) angeordnet ist. 3. Gate driver according to claim 1 or 2, wherein a level shifter (18) is arranged between the cathode of the at least one intermediate diode (2) and the voltage to be measured in the high-side system (6). 4. Gate-Treiber nach einem der vorhergehenden Ansprüche, wobei der Dif ferenzverstärker (16) einen Spitzenwertgleichrichter (26) aufweist, der zwischen dem Ausgang des Differenzverstärkers (16) und der Messeinrichtung (4) ange ordnet ist. 4. Gate driver according to one of the preceding claims, wherein the differential amplifier (16) has a peak value rectifier (26) which is arranged between the output of the differential amplifier (16) and the measuring device (4). 5. Gate-Treiber nach einem der vorhergehenden Ansprüche, wobei der Highside-Schalter (12) und der Lowside-Schalter (22) jeweils ein IGBT oder MOSFET ist. 5. Gate driver according to one of the preceding claims, wherein the high-side switch (12) and the low-side switch (22) are each an IGBT or MOSFET. 6. Gate-Treiber nach Anspruch 5, wobei die Anode der Highside-Diode (14) mit dem Source- Anschluss des MOSFETs als des Highside-Schalters (12) bzw. dem Emitter-Anschluss des IGBT als des Highside-Schalters (12) verbun den ist, und wobei die Kathode der Highside-Diode (14) mit dem Drain-Anschluss des MOSFETs als des Highside-Schalters (12) bzw. dem Kollektor- Anschluss des IGBT als des Highside-Schalters (12) verbunden ist. 6. Gate driver according to claim 5, wherein the anode of the high-side diode (14) with the source connection of the MOSFET as the high-side switch (12) or the emitter connection of the IGBT as the high-side switch (12) verbun is the, and the cathode of the high-side diode (14) is connected to the drain connection of the MOSFET as the high-side switch (12) or the collector connection of the IGBT as the high-side switch (12). 7. Gate-Treiber nach Anspruch 5 oder 6, wobei die Anode der Lowside- Diode (24) mit dem Source-Anschluss des MOSFETs als des Lowside-Schalters (22) bzw. dem Emitter-Anschluss des IGBT als des Lowside-Schalters (22) ver bunden ist, und wobei die Kathode der Lowside-Diode (24) mit dem Drain- Anschluss des MOSFETs als des Lowside-Schalters (22) bzw. dem Kollektor- Anschluss des IGBT als des Lowside-Schalters (22) verbunden ist. 7. Gate driver according to claim 5 or 6, wherein the anode of the lowside diode (24) with the source connection of the MOSFET as the low side switch (22) or the emitter connection of the IGBT as the low side switch ( 22) is connected, and the cathode of the lowside diode (24) is connected to the drain terminal of the MOSFET as the lowside switch (22) or the collector terminal of the IGBT as the lowside switch (22) . 8. Gate-Treiber nach einem der vorhergehenden Ansprüche, wobei die Highside-Diode (14) eine Body-Diode des Highside-Schalters (12) ist, und wobei die Lowside-Diode (24) eine Body-Diode des Lowside-Schalters (22) ist. 8. Gate driver according to one of the preceding claims, wherein the high-side diode (14) is a body diode of the high-side switch (12), and wherein the low-side diode (24) is a body-diode of the low-side switch ( 22) is. 9. Gate-Treiber nach einem der vorhergehenden Ansprüche, wobei die Messeinrichtung (4) ein Analog-Digital-Wandler ist. 9. Gate driver according to one of the preceding claims, wherein the measuring device (4) is an analog-digital converter. 10. Gate-Treiber nach einem der Ansprüche 1 bis 3 und 5 bis 9, wobei zwi schen dem Ausgang des Differenzverstärkers (16) und der Messeinrichtung (4) ein Mikrocontroller angeordnet ist, der so eingerichtet ist, Ausgangssignale des Differenzverstärkers (16) zu einem Zeitpunkt abzutasten. 10. Gate driver according to one of claims 1 to 3 and 5 to 9, wherein between tween the output of the differential amplifier (16) and the measuring device (4), a microcontroller is arranged, which is set up to output signals of the differential amplifier (16) to be sampled at a point in time.
PCT/EP2020/082334 2019-12-06 2020-11-17 Gate driver for controlling a power switch Ceased WO2021110405A1 (en)

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