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WO2021097749A1 - 超声换能器、信息采集元件及电子设备 - Google Patents

超声换能器、信息采集元件及电子设备 Download PDF

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Publication number
WO2021097749A1
WO2021097749A1 PCT/CN2019/119922 CN2019119922W WO2021097749A1 WO 2021097749 A1 WO2021097749 A1 WO 2021097749A1 CN 2019119922 W CN2019119922 W CN 2019119922W WO 2021097749 A1 WO2021097749 A1 WO 2021097749A1
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WO
WIPO (PCT)
Prior art keywords
electrode
ultrasonic transducer
piezoelectric layer
layer
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2019/119922
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English (en)
French (fr)
Inventor
纪登鑫
沈健
王红超
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Goodix Technology Co Ltd
Original Assignee
Shenzhen Goodix Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Shenzhen Goodix Technology Co Ltd filed Critical Shenzhen Goodix Technology Co Ltd
Priority to PCT/CN2019/119922 priority Critical patent/WO2021097749A1/zh
Priority to CN201980004334.7A priority patent/CN113165017B/zh
Publication of WO2021097749A1 publication Critical patent/WO2021097749A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers

Definitions

  • the embodiments of the present application relate to the field of electronic information technology, and in particular to ultrasonic transducers, information collection elements, and electronic equipment.
  • Ultrasonic transducer is a device that converts sound energy and electrical energy.
  • the piezoelectric material in the ultrasonic transducer can produce a voltage difference between both ends when deformed; when there is a voltage difference between both ends, the piezoelectric material can deform .
  • the mutual conversion of mechanical vibration and alternating current can be realized.
  • MEMS ultrasonic transducers are large in size and cannot be used on some portable mobile terminals.
  • MEMS ultrasonic transducers based on Micro Electro Mechanical System (MEMS) technology
  • MEMS Ultrasonic Transducer English: MEMS Ultrasonic Transducer, MUT
  • MEMS Ultrasonic Transducer has reduced the volume on the basis of meeting certain performance requirements.
  • MEMS ultrasonic transducer has a smaller volume and has lower sensitivity than traditional ultrasonic transducers.
  • one of the technical problems solved by the embodiments of the present application is to provide an ultrasonic transducer, an information acquisition element, and an electronic device to overcome the defect of low sensitivity of the ultrasonic transducer in the prior art.
  • an ultrasonic transducer including: a first electrode, a second electrode, a piezoelectric layer, and a support layer;
  • the piezoelectric layer is made of piezoelectric material; the first electrode and the second electrode are respectively fixed above and below the piezoelectric layer; the horizontal distance between the first electrode and the second electrode is greater than or equal to the preset distance, and the preset distance is greater than 0 ;
  • the support layer is fixed under the piezoelectric layer, and the support layer is provided with an upward opening, the opening is a blind hole or a through hole, and the piezoelectric layer covers the opening.
  • the piezoelectric layer is in contact with the edge of the opening on the upper surface of the support layer, and the second electrode is disposed between the piezoelectric layer and the support layer.
  • the upper surface of the second electrode is in contact with the lower surface of the piezoelectric layer, and the lower surface of the second electrode is in contact with the upper surface around the opening of the support layer.
  • the first electrode and the second electrode are plate electrodes.
  • the second electrode is a ring-shaped plate electrode; the projection of the first electrode on the second electrode is located within the ring of the second electrode.
  • the opening provided in the support layer is a cylindrical hollow area
  • the second electrode has a circular ring shape
  • the ratio of the radius of the inner ring of the second electrode to the radius of the opening is predetermined. Set within the range.
  • the radius of the inner ring of the second electrode is equal to the radius of the opening.
  • the ultrasonic transducer further includes a third electrode, the third electrode and the second electrode are on the same side of the piezoelectric layer, and the third electrode faces the first electrode.
  • the third electrode and the second electrode are separated from each other.
  • the second electrode is arranged around the third electrode, and the third electrode is arranged at the opening of the support layer.
  • the ultrasonic transducer further includes a diaphragm layer, and the diaphragm layer is fixed between the support layer and the piezoelectric layer.
  • the diaphragm layer is made of an insulating material.
  • an embodiment of the present application provides an information collection element, including the ultrasonic transducer as described in the first aspect or any one of the first aspects.
  • the information acquisition element is a microphone, an ultrasonic radar, an ultrasonic imaging device, an ultrasonic fingerprint acquisition device, or a proximity sensor.
  • an embodiment of the present application provides an electronic device, including the ultrasonic transducer as described in the first aspect or any one of the first aspects.
  • the electronic device includes an ultrasound transducer array, and the ultrasound transducer array is composed of at least two ultrasound transducers as described in the first aspect or any one of the embodiments of the first aspect.
  • An array of transducers is optionally, in an embodiment of the present application.
  • the first electrode and the second electrode are respectively fixed above and below the piezoelectric layer, and the horizontal distance between the first electrode and the second electrode is greater than or equal to The preset distance, because the horizontal distance between the two electrodes is greater than or equal to the preset distance, the capacitance is reduced, the voltage is increased, and the sensitivity is improved when the amount of charge remains unchanged.
  • Fig. 1 is a schematic longitudinal cross-sectional view of an ultrasonic transducer provided by an embodiment of the application;
  • FIG. 2 is a schematic longitudinal cross-sectional view of an ultrasonic transducer provided by an embodiment of the application
  • FIG. 3 is a schematic diagram of the effects of a first electrode and a second electrode provided by an embodiment of the application;
  • FIG. 4a is a schematic diagram of a top view effect of an electrode shape provided by an embodiment of the application.
  • 4b is a schematic diagram of the top view effect of the electrode shape provided by the embodiment of the application.
  • FIG. 4c is a schematic diagram of a top view effect of an electrode shape provided by an embodiment of the application.
  • FIG. 5 is a graph of the mapping relationship between the ratio k and the sensitivity provided by an embodiment of the application.
  • Fig. 6 is a schematic longitudinal cross-sectional view of an ultrasonic transducer provided by an embodiment of the application.
  • Fig. 7 is a schematic longitudinal cross-sectional view of an ultrasonic transducer provided by an embodiment of the application.
  • FIG. 8 is a schematic longitudinal cross-sectional view of an ultrasonic transducer provided by an embodiment of the application.
  • FIG. 9 is a schematic diagram of fingerprint collection provided by an embodiment of the application.
  • FIG. 10 is a schematic longitudinal cross-sectional view of an ultrasonic fingerprint collection provided by an embodiment of this application.
  • FIG. 11 is a schematic longitudinal cross-sectional view of a proximity sensor according to an embodiment of the application.
  • FIG. 12 is a structural diagram of an electronic device provided by an embodiment of this application.
  • Fig. 1 is a schematic longitudinal cross-sectional view of an ultrasonic transducer provided by an embodiment of the application; as shown in Fig. 1, the ultrasonic transducer 10 includes: a first electrode 101, a second electrode 102, a piezoelectric layer 103, and a support Layer 104;
  • the piezoelectric layer 103 is made of piezoelectric material; the first electrode 101 and the second electrode 102 are respectively fixed above and below the piezoelectric layer 103; the horizontal distance between the first electrode 101 and the second electrode 102 is greater than or equal to a preset distance , The preset distance is greater than 0;
  • the support layer 104 is fixed under the piezoelectric layer 103, and the support layer is provided with an upwardly directed opening, the opening is a blind hole or a through hole, and the piezoelectric layer covers the opening.
  • FIG. 1 illustrates that the opening 1041 is a blind hole as an example, which does not mean that the application is limited to this.
  • FIG. 2 is a schematic longitudinal sectional view of an ultrasonic transducer provided by an embodiment of the application, and FIG. 2 shows a case where the opening 1041 is a through hole.
  • the support layer 104 is provided with an opening 1041, so that the piezoelectric layer 103 can vibrate, thereby achieving acoustic-electric conversion.
  • the support layer 104 functions as an edge support for the piezoelectric layer 103.
  • the piezoelectric layer 103 is in contact with the edge of the opening 1041 on the upper surface of the support layer 104.
  • the second electrode 102 is disposed between the piezoelectric layer 103 and the support layer 104. Further optionally, the upper surface of the second electrode 102 is in contact with the lower surface of the piezoelectric layer 103, and the lower surface of the second electrode 102 is in contact with the upper surface around the opening 1041 of the support layer 104.
  • the side of the piezoelectric layer 103 close to the support layer 104 can be defined as the lower surface of the piezoelectric layer 103, the other side as the upper surface of the piezoelectric layer 103, and the upper surface side as Above, the lower surface side is regarded as the lower side, the direction perpendicular to the upper and lower surfaces of the piezoelectric layer 103 is regarded as the vertical direction, and the plane parallel to the upper and lower surfaces of the piezoelectric layer 103 is regarded as the horizontal plane.
  • the upper surface, lower surface, vertical direction and horizontal plane defined here are all definitions made to illustrate the technology of this solution, and do not represent any limitation.
  • the piezoelectric layer The side of 103 close to the support layer 104 is defined as the upper surface of the piezoelectric layer 103, and the support layer 104 is fixed above the piezoelectric layer 103, which is not limited in the present application.
  • the horizontal distance between the first electrode 101 and the second electrode 102 refers to the shortest distance between the edges of the first electrode 101 and the second electrode 102, regardless of the vertical distance between the first electrode 101 and the second electrode 102 .
  • the horizontal distance between the first electrode 101 and the second electrode 102 is the distance between the first electrode 101 and the second electrode 102 in the top view. If the up and down direction is the reference direction, the horizontal direction is the direction perpendicular to the reference direction, and the horizontal distance refers to the distance between the two electrodes after they are projected on the same horizontal plane.
  • FIG. 3 is a schematic diagram of the effects of a first electrode and a second electrode provided by an embodiment of the application. Because the first electrode 101 and the second electrode 102 are fixed above and below the piezoelectric layer 103, respectively, Therefore, the two electrodes can be equivalent to one capacitor. In order for the ultrasonic transducer 10 to be mounted on a portable electronic device 110 (such as a smart phone, a tablet computer and other terminal devices), the volume of the piezoelectric layer 103 needs to be reduced as much as possible. Therefore, the thickness of the piezoelectric layer 103 is small, the vertical distance between the first electrode 101 and the second electrode 102 is small, and the capacitance based on the vertical distance between the first electrode 101 and the second electrode 102 is relatively large.
  • a portable electronic device 110 such as a smart phone, a tablet computer and other terminal devices
  • Q represents the amount of charge
  • C represents the capacitance
  • V represents the voltage.
  • the amount of charge of the two electrodes does not change.
  • the voltage generated by the vertical distance between the one electrode 101 and the second electrode 102 is very small.
  • the horizontal distance between the first electrode 101 and the second electrode 102 is greater than or equal to the preset distance, the horizontal distance between the first electrode 101 and the second electrode 102 increases, and the capacitance based on the horizontal distance between the first electrode 101 and the second electrode 102 becomes If it is smaller, the voltage will be larger.
  • the voltage generated based on the horizontal distance between the first electrode 101 and the second electrode 102 will be It is relatively large, easy to detect, and has higher sensitivity.
  • the first electrode 101 and the second electrode 102 are plate electrodes.
  • the plate electrodes are planar electrodes.
  • the first electrode 101 and the second electrode 102 may be wafer-shaped electrodes.
  • the second electrode 102 is a ring-shaped plate electrode; the projection of the first electrode 101 on the second electrode 102 is located within the ring of the second electrode 102.
  • the shapes of the first electrode 101 and the second electrode 102 are described in detail, referring to Figures 4a, 4b, and 4c.
  • Figures 4a-4c are schematic diagrams of the top view effect of the electrode shapes provided by the embodiments of the application. 4a-FIG. 4c show the shapes of three groups of electrodes. In FIG.
  • the first electrode 101 is circular
  • the second electrode 102 is a circular ring surrounding the first electrode 101
  • the inner ring and outer ring of the second electrode 102 are both 4b
  • the first electrode 101 is a hexagon
  • the second electrode 102 is a ring surrounding the first electrode 101
  • the inner ring and the outer ring of the second electrode 102 are both hexagons
  • the first electrode 101 is square
  • the second electrode 102 is a ring surrounding the first electrode 101
  • the inner ring and outer ring of the second electrode 102 are both square.
  • the second electrode 102 surrounding the first electrode 101 means that the projection of the first electrode 101 on the second electrode 102 is surrounded by the second electrode 102, or the projection of the second electrode 102 on the first electrode 101 is surrounded by
  • the first electrode 101 refers to that the second electrode 102 surrounds the first electrode 101 in a top view.
  • the opening 1041 of the support layer 104 is a cylindrical hollow area
  • the second electrode 102 has a circular ring shape
  • the radius of the inner ring of the second electrode 102 is equal to the radius of the opening 1041.
  • the ratio of is within the preset range.
  • the radius of the inner ring of the second electrode 102 may be equal to the radius of the opening 1041.
  • the sensitivity reaches the maximum, that is, the inner ring radius of the second electrode 102
  • the sensitivity is maximum, which further improves the sensitivity of the ultrasonic transducer 10.
  • sensitivity can be expressed by voltage, and the greater the voltage, the higher the sensitivity.
  • the piezoelectric layer 103 vibrates under the influence of mechanical waves.
  • the mechanical wave can be ultrasonic.
  • the deformation caused by the vibration of the piezoelectric layer 103 makes the first electrodes 101 on the upper and lower surfaces of the piezoelectric layer 103 and A voltage difference is generated between the second electrodes 102, and the horizontal distance between the first electrode 101 and the second electrode 102 of the present application is greater than or equal to the preset distance, so that the voltage difference is larger, easy to detect, and the ultrasonic transducer 10 has higher sensitivity .
  • the voltage difference between the two electrodes on the upper and lower surfaces of the piezoelectric layer 103 can cause the piezoelectric layer 103 to deform, cause vibration, and generate mechanical waves, for example, ultrasonic waves.
  • Fig. 6 is a schematic longitudinal cross-sectional view of an ultrasonic transducer provided by an embodiment of the application.
  • the ultrasonic transducer 10 further includes a third electrode 105, and the third electrode 105 and The second electrode 102 is on the same side of the piezoelectric layer 103, and the third electrode 105 faces the first electrode 101.
  • the third electrode 105 and the first electrode 101 are directly opposite, that is, the third electrode 105 and the first electrode 101 overlap in the top view, which can enhance the vibration amplitude of the piezoelectric layer 103 and improve the emission efficiency. It should be noted that the size of the third electrode 105 and the first electrode 101 may be the same or different.
  • the third electrode 105 and the second electrode 102 are separated from each other.
  • the second electrode 102 is arranged around the third electrode 105, and the third electrode 105 is arranged at the opening of the support layer 104.
  • FIG. 7 is a schematic longitudinal cross-sectional view of an ultrasonic transducer provided by an embodiment of the application.
  • the ultrasonic transducer 10 further includes a diaphragm layer 106, and the diaphragm layer 106 is fixed. Between the support layer 104 and the piezoelectric layer 103. Fixing the diaphragm layer 106 under the piezoelectric layer 103 can increase the thickness of the entire stack (including the first electrode 101, the second electrode 102, the piezoelectric layer 103 and the diaphragm layer 106), the vibration is more stable, and it also improves The service life of the piezoelectric layer 103.
  • the laminate can be a flat film or pre-curved.
  • the diaphragm layer 106 is made of a dielectric material.
  • the diaphragm layer 106 can improve the mechanical strength of the laminate, increase the service life of the device, adjust the stiffness of the laminate, enhance the transmission/reception performance, and adjust the thickness of the laminate and the neutral plane. Position to adjust the vibration frequency and vibration mode.
  • the diaphragm layer 106 is made of an insulating material.
  • the diaphragm layer 106 may be composed of silicon, silicon dioxide, or silicon nitride, or may be formed by superimposing several materials, which is not limited in this application.
  • a diaphragm layer 106 and/or a protective layer may also be added above the piezoelectric layer 103.
  • the diaphragm layer 106 and the piezoelectric layer 103 may be continuous thin film layers or patterned thin film layers.
  • the ultrasonic transducer 10 includes: a first electrode 101, a second electrode 102, a piezoelectric layer 103, a support layer 104,
  • the third electrode 105 and the diaphragm layer 106, the first electrode 101 and the third electrode 105 are two circular plate electrodes facing each other, the first electrode 101 and the third electrode 105 are respectively above and below the piezoelectric layer 103,
  • the second electrode 102 is a circular plate electrode.
  • the second electrode 102 is located between the piezoelectric layer 103 and the diaphragm layer 106.
  • the support layer is located below the piezoelectric layer.
  • the diaphragm layer 106 is located between the piezoelectric layer 103 and the support layer 104. Meanwhile, the radius of the inner ring of the second electrode 102 is greater than the radius of the first electrode 101, the support layer 104 is provided with a cylindrical opening 1041, and the radius of the opening 1041 is equal to the radius of the inner ring of the second electrode 102.
  • the first electrode and the second electrode are respectively fixed above and below the piezoelectric layer, and the horizontal distance between the first electrode and the second electrode is greater than or equal to the preset distance, because the two The horizontal distance of the electrodes is greater than or equal to the preset distance. Under the condition that the amount of charge remains unchanged, the capacitance is reduced, the voltage is increased, and the sensitivity is improved.
  • an embodiment of the present application provides an information collection element, which includes the ultrasonic transducer 10 as described in the first embodiment.
  • the information collection element is a microphone, an ultrasound radar, an ultrasound imaging device, an ultrasound fingerprint collection device, or a proximity sensor 100.
  • the information collection element is an ultrasonic fingerprint collection device, as shown in FIG. 9, which is a schematic diagram of a fingerprint collection provided by an embodiment of the application.
  • the ultrasound fingerprint collection device can be installed on an electronic device, for example
  • the electronic device may be a smart terminal with a fingerprint collection function, and the fingerprint detection area is in a specific area of the panel of the electronic device.
  • the fingerprint detection area can be placed in a specific area of the display screen, or it can be placed in a special fingerprint detection area (such as the Home button).
  • FIG. 10 is a schematic longitudinal cross-sectional view of an ultrasonic fingerprint collection provided by an embodiment of this application.
  • the ultrasonic fingerprint acquisition device includes an ultrasonic propagation medium 1001 and an ultrasonic transducer array 1002.
  • the ultrasonic transducer array 1002 is composed of at least two ultrasonic transducers 10 as described in the first embodiment.
  • the ultrasonic propagation medium 1001 can transmit the ultrasonic signal generated by the ultrasonic transducer array 1002 to the finger via the panel of the electronic device. Ultrasound is reflected on the interface of the panel, air or glass, and skin. Because the acoustic impedance of air and skin is very different, the intensity of the reflected ultrasonic signal is different, so fingerprints can be imaged.
  • the information collection element is a proximity sensor 110, as shown in FIG. 11, which is a schematic longitudinal cross-sectional view of a proximity sensor provided by an embodiment of the application.
  • the proximity sensor 110 includes an ultrasonic transducer 10 and a substrate. 1101, integrated circuit 1102 and cover 1103.
  • the ultrasonic transducer 10 is the ultrasonic transducer 10 described in the first embodiment.
  • the support layer 104 of the ultrasonic transducer 10 is provided with a cylindrical opening 1041, and the opening 1041 is a circle.
  • a sound hole 11011 is provided on the substrate 1101.
  • the sound hole 11011 may be located under the circular through hole of the support layer 104, and the central axis of the sound hole 11011 and the circular through hole are coincident and aligned.
  • the diameter and length dimensions of the circular through hole and the sound hole 11011 can be designed so that the circular through hole and the sound hole 11011 form an acoustic resonant cavity to enhance the ultrasonic performance of the sensor.
  • the proximity sensor 110 After the sound wave enters the proximity sensor 110 through the sound hole 11011, it causes the air in the circular through hole to vibrate, which in turn causes the piezoelectric layer 103 of the ultrasonic transducer 10 to vibrate.
  • the integrated circuit 1102 transmits electrical signals.
  • the first electrode and the second electrode are respectively fixed above and below the piezoelectric layer, and the horizontal distance between the first electrode and the second electrode is greater than or equal to the preset distance, because the two electrodes The horizontal distance is greater than or equal to the preset distance. Under the condition of the same amount of charge, the capacitance is reduced, the voltage is increased, and the sensitivity is improved.
  • an embodiment of the present application provides an electronic device 120, as shown in FIG. 12, which is a structural diagram of an electronic device provided by an embodiment of the present application.
  • the device 120 includes the ultrasonic transducer 10 as described in the first embodiment.
  • the electronic device 120 includes an ultrasonic transducer array, and the ultrasonic transducer array is an array composed of at least two ultrasonic transducers 10 as described in the first embodiment.
  • the electronic device 120 includes a processor 1201, a memory 1202, and a bus 1203, and the processor 1201, the memory 1202, and the ultrasonic transducer 10 communicate with each other through the bus 1203.
  • the processor 1201 may be a central processing unit 1201 CPU, or an Application Specific Integrated Circuit 1102 (ASIC), or one or more integrated circuits 1102 configured to implement the embodiments of the present invention.
  • the electronic device 120 includes one or more processors 1201, which may be the same type of processor 1201, such as one or more CPUs; or different types of processors 1201, such as one or more CPUs and one or more CPUs. ASIC.
  • the memory 1202 is used to store programs.
  • the memory 1202 may include a high-speed RAM memory 1202, and may also include a non-volatile memory 1202 (non-volatile memory), for example, at least one magnetic disk memory 1202.
  • the first electrode and the second electrode are respectively fixed above and below the piezoelectric layer, and the horizontal distance between the first electrode and the second electrode is greater than or equal to the preset distance, because the two electrodes are The horizontal distance is greater than or equal to the preset distance.
  • the electronic devices of the embodiments of the present application exist in various forms, including but not limited to:
  • Mobile communication equipment This type of equipment is characterized by mobile communication functions, and its main goal is to provide voice and data communications.
  • Such terminals include: smart phones (such as iPhone), multimedia phones, functional phones, and low-end phones.
  • Ultra-mobile personal computer equipment This type of equipment belongs to the category of personal computers, has calculation and processing functions, and generally also has mobile Internet features.
  • Such terminals include: PDA, MID and UMPC devices, such as iPad.
  • Portable entertainment equipment This type of equipment can display and play multimedia content.
  • Such devices include: audio, video players (such as iPod), handheld game consoles, e-books, as well as smart toys and portable car navigation devices.
  • Server A device that provides computing services.
  • the structure of a server includes a processor 810, hard disk, memory, system bus, etc.
  • the server is similar to a general computer architecture, but because it needs to provide highly reliable services, it is High requirements in terms of performance, reliability, security, scalability, and manageability.
  • the improvement of a technology can be clearly distinguished between hardware improvements (for example, improvements in circuit structures such as diodes, transistors, switches, etc.) or software improvements (improvements in method flow).
  • hardware improvements for example, improvements in circuit structures such as diodes, transistors, switches, etc.
  • software improvements improvements in method flow.
  • the improvement of many methods and processes of today can be regarded as a direct improvement of the hardware circuit structure.
  • Designers almost always get the corresponding hardware circuit structure by programming the improved method flow into the hardware circuit. Therefore, it cannot be said that the improvement of a method flow cannot be realized by the hardware entity module.
  • a programmable logic device for example, a Field Programmable Gate Array (Field Programmable Gate Array, FPGA)
  • PLD Programmable Logic Device
  • FPGA Field Programmable Gate Array
  • HDL Hardware Description Language
  • ABEL Advanced Boolean Expression Language
  • AHDL Altera Hardware Description Language
  • HDCal JHDL
  • Lava Lava
  • Lola MyHDL
  • PALASM RHDL
  • VHDL Very-High-Speed Integrated Circuit Hardware Description Language
  • Verilog Verilog
  • the controller can be implemented in any suitable manner.
  • the controller can take the form of, for example, a microprocessor or a processor and a computer-readable medium storing computer-readable program codes (such as software or firmware) executable by the (micro)processor. , Logic gates, switches, application specific integrated circuits (ASICs), programmable logic controllers and embedded microcontrollers. Examples of controllers include but are not limited to the following microcontrollers: ARC625D, Atmel AT91SAM, Microchip PIC18F26K20 and Silicon Labs C8051F320, the memory controller can also be implemented as part of the memory control logic.
  • controllers in addition to implementing the controller in a purely computer-readable program code manner, it is entirely possible to program the method steps to make the controller use logic gates, switches, application-specific integrated circuits, programmable logic controllers, and embedded logic.
  • the same function can be realized in the form of a microcontroller or the like. Therefore, such a controller can be regarded as a hardware component, and the devices included in it for realizing various functions can also be regarded as a structure within the hardware component. Or even, the device for realizing various functions can be regarded as both a software module for realizing the method and a structure within a hardware component.

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Abstract

一种超声换能器、信息采集元件及电子设备，超声换能器（10）包括：第一电极（101）、第二电极（102）、压电层（103）和支撑层（104）；压电层（103）由压电材料制成；第一电极（101）和第二电极（102）分别固定于压电层（103）的上方和下方；第一电极（101）和第二电极（102）的水平距离大于或等于预设距离；支撑层（104）固定于压电层（103）的下方，支撑层（104）设置有方向朝上的开孔（1041），开孔（1041）为盲孔或通孔，压电层（103）覆盖在开孔上，可提高超声换能器（10）的灵敏度。

Description

超声换能器、信息采集元件及电子设备 技术领域
本申请实施例涉及电子信息技术领域，尤其涉及超声换能器、信息采集元件及电子设备。
背景技术
超声换能器是将声能和电能互相转换的器件，超声换能器中的压电材料，在发生形变时两端可以产生电压差；在两端有电压差时，压电材料可以发生形变。利用压电材料的这种特性，可以实现机械振动和交流电的互相转换。
但是，传统的超声换能器体积较大，不能在一些便携式的移动终端上使用，随着微制造技术的发展，基于微机电系统(英文：Micro Electro Mechanical System，MEMS)技术的MEMS超声换能器(英文：MEMS Ultrasonic Transducer，MUT)在满足一定性能要求的基础上，减小了体积，但是，MEMS超声换能器因为体积变小，与传统超声换能器相比，灵敏度较低。
发明内容
有鉴于此，本申请实施例所解决的技术问题之一在于提供一种超声换能器、信息采集元件及电子设备，用以克服现有技术中超声换能器灵敏度较低的缺陷。
第一方面，本申请实施例提供了一种超声换能器，包括：第一电极、第二电极、压电层和支撑层；
压电层由压电材料制成；第一电极和第二电极分别固定于压电层的上方和下方；第一电极和第二电极的水平距离大于或等于预设距离，预设距离大于0；
支撑层固定于压电层的下方，支撑层设置有方向朝上的开孔，开孔为盲孔或通孔，压电层覆盖在开孔上。
可选地，在本申请的一个实施例中，压电层与支撑层上表面的开孔边缘接触，第二电极设置于压电层和支撑层之间。
可选地，在本申请的一个实施例中，第二电极的上表面与压电层的下表面接触，第二电极的下表面与支撑层的开孔周围的上表面接触。
可选地，在本申请的一个实施例中，第一电极和第二电极为平板电极。
可选地，在本申请的一个实施例中，第二电极为环形的平板电极；第一电极在第二电极上的投影位于第二电极的环形之内。
可选地，在本申请的一个实施例中，支撑层设置的开孔为圆柱形的中空区域，第二电极为圆环形，第二电极的内环半径与开孔的半径的比值在预设范围内。
可选地，在本申请的一个实施例中，第二电极的内环半径等于开孔的半径。
可选地，在本申请的一个实施例中，超声换能器还包括第三电极，第三电极与第二电极在压电层的同一侧，第三电极正对第一电极。
可选地，在本申请的一个实施例中，第三电极与第二电极相互分离。
可选地，在本申请的一个实施例中，第二电极环绕第三电极设置，第三电极设置于支撑层的开孔处。
可选地，在本申请的一个实施例中，超声换能器还包括振膜层，振膜层固定于支撑层和压电层之间。
可选地，在本申请的一个实施例中，振膜层由绝缘材料制成。
第二方面，本申请实施例提供一种信息采集元件，包括如第一方面或第一方面的任意一个实施例中所描述的超声换能器。
可选地，在本申请的一个实施例中，信息采集元件为麦克风、超声雷达、超声成像装置、超声指纹采集装置或接近传感器。
第三方面，本申请实施例提供一种电子设备，包括如第一方面或第一方面的任意一个实施例中所描述的超声换能器。
可选地，在本申请的一个实施例中，电子设备包括超声换能器阵列，超声换能器阵列是由至少两个如第一方面或第一方面的任意一个实施例中所描述的超声换能器组成的阵列。
本申请实施例提供的超声换能器、信息采集元件及电子设备，第一电极和第二电极分别固定于压电层的上方和下方，且第一电极和第二电极的水平距离大于或等于预设距离，因为两个电极的水平距离大于或等于预设距离，在电荷量不变的情况下，减小了电容大小，增加了电压，提高了灵敏度。
附图说明
后文将参照附图以示例性而非限制性的方式详细描述本申请实施例的一些具体实施例。附图中相同的附图标记标示了相同或类似的部件或部分。本领域技术人员应该理解，这些附图未必是按比例绘制的。附图中：
图1为本申请实施例提供的一种超声换能器的纵截面示意图；
图2为本申请实施例提供的一种超声换能器的纵截面示意图；
图3为本申请实施例提供的一种第一电极和第二电极的效果示意图；
图4a为本申请实施例提供的电极形状俯视效果示意图；
图4b为本申请实施例提供的电极形状俯视效果示意图；
图4c为本申请实施例提供的电极形状俯视效果示意图；
图5为本申请实施例提供的比值k与灵敏度映射关系的曲线图；
图6为本申请实施例提供的一种超声换能器的纵截面示意图；
图7为本申请实施例提供的一种超声换能器的纵截面示意图；
图8为本申请实施例提供的一种超声换能器的纵截面示意图；
图9为本申请实施例提供的一种指纹采集示意图；
图10为本申请实施例提供的一种超声指纹采集的纵截面示意图；
图11为本申请实施例提供的一种接近传感器的纵截面示意图；
图12为本申请实施例提供的一种电子设备的结构图。
具体实施方式
实施本申请实施例的任一技术方案必不一定需要同时达到以上的所有优点。
为了使本领域的人员更好地理解本申请实施例中的技术方案，下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本申请实施例一部分实施例，而不是全部的实施例。基于本申请实施例中的实施例，本领域普通技术人员所获得的所有其他实施例，都应当属于本申请实施例保护的范围。
下面结合本申请实施例附图进一步说明本申请实施例具体实现。
实施例一、
图1为本申请实施例提供的一种超声换能器的纵截面示意图；如图1所示，该超声换能器10包括：第一电极101、第二电极102、压电层103和支撑层104；
压电层103由压电材料制成；第一电极101和第二电极102分别固定于压电层103的上方和下方；第一电极101和第二电极102的水平距离大于或等于预设距离，预设距离大于0；
支撑层104固定于压电层103的下方，支撑层设置有方向朝上的开孔，开孔为盲孔或通孔，压电层覆盖在开孔上。
图1以开孔1041是盲孔为例进行示意，并不代表本申请局限于此。如图2所示，图2为本申请实施例提供的一种超声换能器的纵截面示意图，图2示出了开孔1041为通孔的情况。支撑层104设置有开孔1041，使得压电层103可以进行振动，从而实现声电转换。
支撑层104对压电层103起边缘支撑的作用。可选地，在本申请的一个实施例中，压电层103与支撑层104上表面的开孔1041边缘接触。
可选地，第二电极102设置于压电层103和支撑层104之间。进一步可选地，第二电极102的上表面与压电层103的下表面接触，第二电极102的下表面与支撑层104的开孔1041周围的上表面接触。
需要说明的是，在本申请中，可以将压电层103靠近支撑层104的一面定义为压电层103的下表面，将另一面作为压电层103的上表面，将上表面一侧作为上方，将下表面一侧作为下方，将垂直于压电层103上表面和下表面的方向作为垂直方向，将平行于压电层103上表面和下表面的平面作为水平面。此处所定义的上表面、下表面、垂直方向和水平面，都是为了说明本方案的技术所做的定义，并不代表任何限定，也可以通过其他方式进行定义和描述，例如，将压电层103靠近支撑层104的一面定义为压电层103的上表面，则支撑层104固定于压电层103的上方，本申请对此不做限制。
第一电极101和第二电极102的水平距离指的是不考虑第一电极101和第二电极102垂直方向上的距离，所得到的第一电极101和第二电极102边缘之间的最短距离。将从压电层103上表面向下表面看的视角作为俯视，则第一电极101和第二电极102的水平距离即为俯视图中第一电极101和第二电极102之间的距离。如果以上下方向为参考方向，水平方向则是与参考方向垂直的方向，水平距离指的是两个电极在同一个水平面上投影后两者相距的距离。
结合图3所示，图3为本申请实施例提供的一种第一电极和第二电极的效果示意图，第一电极101和第二电极102因为分别固定于压电层103的上方和下方，因此，两个电极可以等效为一个电容，为了超声换能器10能够安装在 便携式的电子设备110上(例如智能手机、平板电脑等终端设备)，需要尽可能减小压电层103的体积，因此，压电层103的厚度较小，第一电极101和第二电极102的垂直距离很小，基于第一电极101和第二电极102的垂直距离的电容就比较大，根据电荷量、电容及电压之间的关系，如公式Q＝C×V，Q表示电荷量，C表示电容，V表示电压，两个电极的电荷量不变，电容越大，电压就越小，所以基于第一电极101和第二电极102的垂直距离产生的电压很小。在第一电极101和第二电极102的水平距离大于或等于预设距离时，第一电极101和第二电极102水平距离增加，基于第一电极101和第二电极102的水平距离的电容就比较小，电压就会较大，因此，在第一电极101和第二电极102的水平距离大于或等于预设距离时，基于第一电极101和第二电极102的水平距离产生的电压就会比较大，易于检测，灵敏度更高。
可选地，在本申请的一个实施例中，第一电极101和第二电极102为平板电极。平板电极即为平面电极，例如，第一电极101和第二电极102可以是圆片状的电极，当然，此处只是示例性说明。
可选地，在本申请的一个实施例中，第二电极102为环形的平板电极；第一电极101在第二电极102上的投影位于第二电极102的环形之内。此处，对第一电极101和第二电极102的形状进行详细说明，参照图4a、图4b和图4c所示，图4a-图4c为本申请实施例提供的电极形状俯视效果示意图，图4a-图4c示出了三组电极形状，图4a中，第一电极101是圆形，第二电极102是环绕第一电极101的圆环形，第二电极102的内环和外环均为圆形；图4b中，第一电极101是六边形，第二电极102是环绕第一电极101的环形，第二电极102的内环和外环均为六边形；图4c中，第一电极101是正方形，第二电极102是环绕第一电极101的环形，第二电极102的内环和外环均为正方形。在本申请中，第二电极102环绕第一电极101指的是第一电极101在第二电极102上的投影被第二电极102环绕，或者第二电极102在第一电极101上的投影环绕第一电极101，指的是在俯视图中第二电极102环绕第一电极101。
进一步可选地，在本申请的一个实施例中，支撑层104的开孔1041为圆柱形中空区域，第二电极102为圆环形，第二电极102的内环半径与开孔1041的半径的比值在预设范围内。可选地，第二电极102的内环半径可以等于开孔1041的半径。
用Rp表示第二电极102的内环半径，用Ri表示开孔1041的半径，比 值k＝Rp/Ri，参照图5所示，图5为本申请实施例提供的比值k与灵敏度映射关系的曲线图，可选地，图5的曲线中，以第一电极101的半径Re与开孔1041的半径Ri满足Re＝0.4Ri进行仿真，从图5中可以观察到，比值k小于1时，灵敏度随着比值k的增大而增大，比值k大于1时，灵敏度随着比值k的增大而减小，在比值k等于1时，灵敏度达到最大，即第二电极102的内环半径等于开孔1041的半径的比值时，灵敏度最大，进一步提高了超声换能器10的灵敏度。本申请中，灵敏度可以用电压来表示，电压越大，表示灵敏度越高。
在机械振动的能量转换为电能的过程中，压电层103在机械波的影响下振动，机械波可以是超声波，压电层103振动所产生的形变使得压电层103上下表面的第一电极101和第二电极102之间产生电压差，本申请的第一电极101和第二电极102的水平距离大于或等于预设距离，使得电压差更大，易于检测，超声换能器10的灵敏度更高。同理，在电能转换为机械振动的能量时，压电层103上下表面的两个电极之间的电压差可以使得压电层103发生形变，引起振动，从而产生机械波，例如，可以产生超声波。
图6为本申请实施例提供的一种超声换能器的纵截面示意图，可选地，在本申请的一个实施例中，超声换能器10还包括第三电极105，第三电极105与第二电极102在压电层103的同一侧，第三电极105正对第一电极101。
第三电极105和第一电极101正对，即第三电极105和第一电极101在俯视图中重合，可以增强压电层103的振动幅度，提高发射效率。需要说明的是，第三电极105和第一电极101的大小可以相同，也可以大小不同。
可选地，在本申请的一个实施例中，第三电极105与第二电极102相互分离。
可选地，在本申请的一个实施例中，第二电极102环绕第三电极105设置，第三电极105设置于支撑层104的开孔处。
图7为本申请实施例提供的一种超声换能器的纵截面示意图，可选地，在本申请的一个实施例中，超声换能器10还包括振膜层106，振膜层106固定于支撑层104和压电层103之间。在压电层103下方固定振膜层106，可以提高整个叠层(包括第一电极101、第二电极102、压电层103和振膜层106)的厚度，振动更稳定，而且也提高了压电层103的使用寿命。可选地，叠层可以为平面薄膜，也可以有预弯曲。
振膜层106由介质材料制成，振膜层106可以提高叠层的机械强度，增 加器件使用寿命，还可以调整叠层刚度，增强发射/接收性能，还可以调整叠层厚度和中性平面位置，以调节振动频率和振动模式。可选地，在本申请的一个实施例中，振膜层106由绝缘材料制成。例如，振膜层106可以由硅、二氧化硅或氮化硅组成，也可以由几个材料叠加形成，本申请对此不做限制。
可选地，在压电层103上方也可以增加振膜层106和/或保护层。振膜层106和压电层103可以为连续薄膜层，也可以为图形化薄膜层。
图8为本申请实施例提供的一种超声换能器的纵截面示意图，可选地，超声换能器10包括：第一电极101、第二电极102、压电层103、支撑层104、第三电极105和振膜层106，第一电极101和第三电极105为相互正对的两个圆形平板电极，第一电极101和第三电极105分别在压电层103上方和下方，第二电极102为圆环形平板电极，第二电极102位于压电层103和振膜层106之间，支撑层位于压电层下方，振膜层106位于压电层103和支撑层104之间，第二电极102的内环半径大于第一电极101的半径，支撑层104设置有圆柱形的开孔1041，开孔1041的半径等于第二电极102的内环半径。
本申请实施例提供的超声换能器，第一电极和第二电极分别固定于压电层的上方和下方，且第一电极和第二电极的水平距离大于或等于预设距离，因为两个电极的水平距离大于或等于预设距离，在电荷量不变的情况下，减小了电容大小，增加了电压，提高了灵敏度。
实施例二、
基于上述实施例一所描述的超声换能器10，本申请实施例提供一种信息采集元件，该信息采集元件包括如实施例一中所描述的超声换能器10。
可选地，在本申请的一个实施例中，信息采集元件为麦克风、超声雷达、超声成像装置、超声指纹采集装置或接近传感器100。
此处，列举两个具体示例对信息采集元件进行说明，当然，此处只是示例性说明，并不代表本申请局限于此：
在第一个示例中，信息采集元件为超声指纹采集装置，如图9所示，图9为本申请实施例提供的一种指纹采集示意图，超声指纹采集装置可以安装在一个电子设备上，例如，该电子设备可以是带有指纹采集功能的智能终端，指纹检测区域在该电子设备的面板的特定区域，以智能手机的指纹解锁功能为例，在需要对智能手机进行解锁的时候，使用者只需要将手指按压在指纹检测区域，便可以完成指纹识别。其中指纹检测区域可以安置在显示屏特定区域，也可以 放置在专门的指纹检测区域(比如Home键)。
图10为本申请实施例提供的一种超声指纹采集的纵截面示意图。超声指纹采集装置包括，超声传播媒介1001和超声换能器阵列1002，超声换能器阵列1002是由至少两个如实施例一所描述的超声换能器10组成的。超声传播媒介1001能够将超声换能器阵列1002产生的超声信号经由电子设备的面板传递到手指。超声波在面板、空气或玻璃、皮肤界面发生反射，由于空气和皮肤的声阻抗有很大差别，导致反射的超声信号的强度不同，故可以对指纹成像。
在第二个示例中，信息采集元件为接近传感器110，如图11所示，图11为本申请实施例提供的一种接近传感器的纵截面示意图，接近传感器110包括超声换能器10、基板1101、集成电路1102和封盖1103。其中，超声换能器10为实施例一中所描述的超声换能器10，在本示例中，超声换能器10的支撑层104设置有圆柱形的开孔1041，该开孔1041为圆形通孔，基板1101上设置有声孔11011，声孔11011可以位于支撑层104的圆形通孔下方，声孔11011和圆形通孔的中心轴重合对齐。
可以通过设计圆形通孔和声孔11011的直径及长度尺寸，以使得圆形通孔和声孔11011形成声学谐振腔，增强传感器的超声性能。对于给定的工作频率f，当声学谐振腔有效长度L等于1/4波长的奇数倍时，可以满足谐振条件，即L＝nλ/4，其中n＝1,3,5…，λ＝c/f，λ表示波长，c为声速，f为频率。
在声波通过声孔11011进入接近传感器110后，引起圆形通孔内的空气振动，进而引起超声换能器10的压电层103振动，压电层103两侧的电极产生电压差，并向集成电路1102传输电信号。
本申请实施例提供的信息采集元件，第一电极和第二电极分别固定于压电层的上方和下方，且第一电极和第二电极的水平距离大于或等于预设距离，因为两个电极的水平距离大于或等于预设距离，在电荷量不变的情况下，减小了电容大小，增加了电压，提高了灵敏度。
实施例三、
基于上述实施例一所描述的超声换能器10，本申请实施例提供一种电子设备120，如图12所示，图12为本申请实施例提供的一种电子设备的结构图，该电子设备120包括如实施例一所描述的超声换能器10。
可选地，在本申请的一个实施例中，电子设备120包括超声换能器阵列，超声换能器阵列是由至少两个如实施例一所描述的超声换能器10组成的阵列。
可选地，如图11所示，该电子设备120包括处理器1201、存储器1202和总线1203，处理器1201、存储器1202和超声换能器10通过总线1203相互通信。
处理器1201可能是中央处理器1201CPU，或者是特定集成电路1102ASIC(Application Specific Integrated Circuit)，或者是被配置成实施本发明实施例的一个或多个集成电路1102。电子设备120包括的一个或多个处理器1201，可以是同一类型的处理器1201，如一个或多个CPU；也可以是不同类型的处理器1201，如一个或多个CPU以及一个或多个ASIC。
存储器1202，用于存放程序。存储器1202可能包含高速RAM存储器1202，也可能还包括非易失性存储器1202(non-volatile memory)，例如至少一个磁盘存储器1202。
本申请实施例提供的电子设备，第一电极和第二电极分别固定于压电层的上方和下方，且第一电极和第二电极的水平距离大于或等于预设距离，因为两个电极的水平距离大于或等于预设距离，在电荷量不变的情况下，减小了电容大小，增加了电压，提高了灵敏度。
本申请实施例的电子设备以多种形式存在，包括但不限于:
(1)移动通信设备:这类设备的特点是具备移动通信功能，并且以提供话音、数据通信为主要目标。这类终端包括:智能手机(例如iPhone)、多媒体手机、功能性手机，以及低端手机等。
(2)超移动个人计算机设备:这类设备属于个人计算机的范畴，有计算和处理功能，一般也具备移动上网特性。这类终端包括:PDA、MID和UMPC设备等，例如iPad。
(3)便携式娱乐设备:这类设备可以显示和播放多媒体内容。该类设备包括:音频、视频播放器(例如iPod)，掌上游戏机，电子书，以及智能玩具和便携式车载导航设备。
(4)服务器:提供计算服务的设备，服务器的构成包括处理器810、硬盘、内存、系统总线等，服务器和通用的计算机架构类似，但是由于需要提供高可靠的服务，因此在处理能力、稳定性、可靠性、安全性、可扩展性、可管理性等方面要求较高。
(5)其他具有数据交互功能的电子装置。
至此，已经对本主题的特定实施例进行了描述。其它实施例在所附权利 要求书的范围内。在一些情况下，在权利要求书中记载的动作可以按照不同的顺序来执行并且仍然可以实现期望的结果。另外，在附图中描绘的过程不一定要求示出的特定顺序或者连续顺序，以实现期望的结果。在某些实施方式中，多任务处理和并行处理可以是有利的。
在20世纪90年代，对于一个技术的改进可以很明显地区分是硬件上的改进(例如，对二极管、晶体管、开关等电路结构的改进)还是软件上的改进(对于方法流程的改进)。然而，随着技术的发展，当今的很多方法流程的改进已经可以视为硬件电路结构的直接改进。设计人员几乎都通过将改进的方法流程编程到硬件电路中来得到相应的硬件电路结构。因此，不能说一个方法流程的改进就不能用硬件实体模块来实现。例如，可编程逻辑器件(Programmable Logic Device,PLD)(例如现场可编程门阵列(Field Programmable Gate Array，FPGA))就是这样一种集成电路，其逻辑功能由用户对器件编程来确定。由设计人员自行编程来把一个数字系统“集成”在一片PLD上，而不需要请芯片制造厂商来设计和制作专用的集成电路芯片。而且，如今，取代手工地制作集成电路芯片，这种编程也多半改用“逻辑编译器(logic compiler)”软件来实现，它与程序开发撰写时所用的软件编译器相类似，而要编译之前的原始代码也得用特定的编程语言来撰写，此称之为硬件描述语言(Hardware Description Language，HDL)，而HDL也并非仅有一种，而是有许多种，如ABEL(Advanced Boolean Expression Language)、AHDL(Altera Hardware Description Language)、Confluence、CUPL(Cornell University Programming Language)、HDCal、JHDL(Java Hardware Description Language)、Lava、Lola、MyHDL、PALASM、RHDL(Ruby Hardware Description Language)等，目前最普遍使用的是VHDL(Very-High-Speed Integrated Circuit Hardware Description Language)与Verilog。本领域技术人员也应该清楚，只需要将方法流程用上述几种硬件描述语言稍作逻辑编程并编程到集成电路中，就可以很容易得到实现该逻辑方法流程的硬件电路。
控制器可以按任何适当的方式实现，例如，控制器可以采取例如微处理器或处理器以及存储可由该(微)处理器执行的计算机可读程序代码(例如软件或固件)的计算机可读介质、逻辑门、开关、专用集成电路(Application Specific Integrated Circuit，ASIC)、可编程逻辑控制器和嵌入微控制器的形式，控制器的例子包括但不限于以下微控制器：ARC 625D、Atmel AT91SAM、Microchip  PIC18F26K20以及Silicone Labs C8051F320，存储器控制器还可以被实现为存储器的控制逻辑的一部分。本领域技术人员也知道，除了以纯计算机可读程序代码方式实现控制器以外，完全可以通过将方法步骤进行逻辑编程来使得控制器以逻辑门、开关、专用集成电路、可编程逻辑控制器和嵌入微控制器等的形式来实现相同功能。因此这种控制器可以被认为是一种硬件部件，而对其内包括的用于实现各种功能的装置也可以视为硬件部件内的结构。或者甚至，可以将用于实现各种功能的装置视为既可以是实现方法的软件模块又可以是硬件部件内的结构。
还需要说明的是，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、商品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、商品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、商品或者设备中还存在另外的相同要素。
本说明书中的各个实施例均采用递进的方式描述，各个实施例之间相同相似的部分互相参见即可，每个实施例重点说明的都是与其他实施例的不同之处。尤其，对于系统实施例而言，由于其基本相似于方法实施例，所以描述的比较简单，相关之处参见方法实施例的部分说明即可。
以上所述仅为本申请的实施例而已，并不用于限制本申请。对于本领域技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原理之内所作的任何修改、等同替换、改进等，均应包含在本申请的权利要求范围之内。

Claims (16)

  1. 一种超声换能器，其特征在于，包括：第一电极、第二电极、压电层和支撑层；
    所述压电层由压电材料制成；所述第一电极和所述第二电极分别固定于所述压电层的上方和下方；所述第一电极和所述第二电极的水平距离大于或等于预设距离，所述预设距离大于0；
    所述支撑层固定于所述压电层的下方，所述支撑层设置有方向朝上的开孔，所述开孔为盲孔或通孔，所述压电层覆盖在所述开孔上。
  2. 根据权利要求1所述的超声换能器，其特征在于，
    所述压电层与所述支撑层上表面的开孔边缘接触，所述第二电极设置于所述压电层和所述支撑层之间。
  3. 根据权利要求2所述的超声换能器，其特征在于，所述第二电极的上表面与所述压电层的下表面接触，所述第二电极的下表面与所述支撑层的开孔周围的上表面接触。
  4. 根据权利要求1所述的超声换能器，其特征在于，所述第一电极和所述第二电极为平板电极。
  5. 根据权利要求4所述的超声换能器，其特征在于，所述第二电极为环形的平板电极；所述第一电极在所述第二电极上的投影位于所述第二电极的环形之内。
  6. 根据权利要求5所述的超声换能器，其特征在于，所述支撑层的开孔为圆柱形的中空区域，所述第二电极为圆环形，所述第二电极的内环半径与所述开孔的半径的比值在预设范围内。
  7. 根据权利要求6所述的超声换能器，其特征在于，所述第二电极的内环半径等于所述开孔的半径。
  8. 根据权利要求1所述的超声换能器，其特征在于，所述超声换能器还包括第三电极，所述第三电极与所述第二电极在所述压电层的同一侧，所述第三电极正对所述第一电极。
  9. 根据权利要求8所述的超声换能器，其特征在于，所述第三电极与所述第二电极相互分离。
  10. 根据权利要求9所述的超声换能器，其特征在于，所述第二电极环绕所述第三电极设置，所述第三电极设置于所述支撑层的开孔处。
  11. 根据权利要求1-10任一项所述的超声换能器，其特征在于，所述超声 换能器还包括振膜层，所述振膜层固定于所述支撑层和所述压电层之间。
  12. 根据权利要求11所述的超声换能器，其特征在于，所述振膜层由绝缘材料制成。
  13. 一种信息采集元件，其特征在于，包括如权利要求1-12任一项所述的超声换能器。
  14. 根据权利要求13所述的信息采集元件，其特征在于，所述信息采集元件为麦克风、超声雷达、超声成像装置、超声指纹采集装置或接近传感器。
  15. 一种电子设备，其特征在于，包括如权利要求1-12任一项所述的超声换能器。
  16. 根据权利要求15所述的电子设备，其特征在于，所述电子设备包括超声换能器阵列，所述超声换能器阵列是由至少两个如权利要求1-12任一项所述的超声换能器组成的阵列。
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