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WO2020004290A1 - Photopile et son procédé de fabrication - Google Patents

Photopile et son procédé de fabrication Download PDF

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Publication number
WO2020004290A1
WO2020004290A1 PCT/JP2019/024850 JP2019024850W WO2020004290A1 WO 2020004290 A1 WO2020004290 A1 WO 2020004290A1 JP 2019024850 W JP2019024850 W JP 2019024850W WO 2020004290 A1 WO2020004290 A1 WO 2020004290A1
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WO
WIPO (PCT)
Prior art keywords
hole
substrate
solder
aluminum electrode
soldering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2019/024850
Other languages
English (en)
Japanese (ja)
Inventor
傑也 新井
ミエ子 菅原
小林　賢一
秀利 小宮
正五 松井
潤 錦織
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Artbeam Co ltd
Original Assignee
Artbeam Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Artbeam Co ltd filed Critical Artbeam Co ltd
Priority to CN201980042980.2A priority Critical patent/CN112352320A/zh
Priority to JP2020527491A priority patent/JPWO2020004290A1/ja
Priority to KR1020217002095A priority patent/KR20210022108A/ko
Publication of WO2020004290A1 publication Critical patent/WO2020004290A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • H10F77/937—Busbar structures for modules
    • H10W70/24—
    • H10W72/072—
    • H10W72/20—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention is directed to forming an area for generating a high electron concentration when light is irradiated on a substrate, forming an insulating film that transmits light on the area, and taking out electrons from the area on the insulating film.
  • a finger electrode is formed to extract electrons to the outside through the finger electrode, and a lead wire is soldered to a hole formed in the aluminum electrode on the back surface of the substrate, and 0 mm is applied from the edge of the hole to the upper side of the aluminum electrode.
  • the present invention relates to a solar cell and a method of manufacturing a solar cell, which protrude by more than 0.1 mm and solder to increase conversion efficiency and improve fixing strength of a lead wire on a back surface.
  • a nitride film 32 is formed on the surface (upper surface) of a silicon substrate 31, and a paste (containing lead glass) of a finger electrode (silver) 33 is screen-printed and sintered thereon.
  • a finger electrode 33 for extracting electrons from the high electron concentration region to the outside by forming a hole in the nitride film 32 is formed.
  • a bus bar electrode (silver) 34 is screen-printed and sintered in a direction orthogonal to the finger electrode 33 to generate the electrode.
  • a ribbon (lead wire) 35 was soldered on the bus bar electrode (silver) 34 with solder 36 to firmly fix the ribbon 35 to the silicon substrate 31.
  • an aluminum electrode 37 was formed on the back surface (lower surface) of the silicon substrate 31, and a ribbon 39 was soldered and fixed on the aluminum electrode 37.
  • the aluminum electrode 37 is formed on the entire surface and the soldering strength of the ribbon 39 is low, a hole is formed in a part of the aluminum electrode 37 (a hole is formed on the surface corresponding to the bus bar electrode 34).
  • the silver paste is screen-printed and sintered to form a silver portion 371, and the ribbon 39 is fixed to the silver portion 371 with the solder 38 to obtain a necessary fixing strength.
  • the present inventors soldered directly to the aluminum electrode hole on the back surface of the substrate, and slightly protruded from the edge of the hole onto the aluminum electrode, and soldered the ribbon to the substrate with sufficient fixing strength.
  • the structure and method of obtaining a fixed and high conversion efficiency were found by experiments.
  • the present invention forms a region that generates a high electron concentration when light is irradiated onto a substrate, forms an insulating film that transmits light over the region, and extracts electrons from the region over the insulating film.
  • An aluminum electrode is formed on the entire back surface of a substrate in a solar cell in which a finger electrode is formed as an outlet and electrons are taken out through the finger electrode and electrons are introduced from the back surface of the substrate to form a circuit.
  • a hole is formed in a part of the electrode, or an aluminum electrode with a hole is formed in a part of the entire back surface of the board, soldered to the board inside the hole, and the aluminum electrode from the edge of the hole together 0.1 mm or more is soldered to the upper side of the board, and electrons are allowed to flow from the part of the board inside the soldered hole and the part of the aluminum electrode protruding more than 0.1 mm from the edge of the hole, respectively, It was realized a solar cell to increase the conversion efficiency of the cell.
  • the portion where the hole of the aluminum electrode is formed is a portion corresponding to the outgoing line on the surface.
  • soldering is performed by soldering only solder, or solder and a lead wire, or a pre-soldered lead wire.
  • soldering is performed in a state where the temperature of the portion to be soldered is lower than the temperature at which the solder melts and preheated to room temperature or higher.
  • the solder contains at least one of zinc, aluminum, and silicon in tin.
  • the solder does not contain Pb, Ag, and Cu.
  • soldering is performed by protruding 0.1 mm or more from the edge of the hole to the upper side of the aluminum electrode, and protruding 0.1 mm to 3.0 mm or less from the upper side of the aluminum electrode.
  • the present invention solders directly to the aluminum electrode hole on the back surface of the substrate and slightly protrudes from the edge of the hole onto the aluminum electrode, and solders the extraction wire with sufficient fixing strength.
  • a configuration and a method for fixing to a substrate and obtaining high conversion efficiency have been realized.
  • the aluminum electrode protruding from the edge of the hole of the substrate by 0.1 mm or more is soldered, and electrons are supplied to the substrate from the protruded and soldered aluminum electrode and the aluminum electrode connected thereto, and the Experiments confirmed that the conversion efficiency was improved (see FIGS. 4 and 5).
  • FIG. 1 shows a configuration diagram of an embodiment of the present invention.
  • FIG. 1 shows a side view of the whole
  • (b) of FIG. 1 shows an enlarged view of a main part of (a) of FIG.
  • a substrate (silicon substrate) 1 is a silicon substrate (single crystal or polycrystal) on which a solar cell is to be formed.
  • the back surface (Al) 2 of the substrate is the back surface of the substrate 1. After forming an aluminum electrode on the entire back surface, a hole is partially formed or an aluminum electrode having a hole is formed on the entire back surface of the substrate 1. Or something.
  • the substrate heating heater 3 is a heating element for preheating the substrate 1 and, when soldering to the substrate 1, is heated to a temperature lower than a temperature at which the solder melts and to a temperature higher than a room temperature, and has an automatic temperature adjusting mechanism. Things.
  • the ABS solder 11 is a long solder material having a shape convenient for supplying solder such as a thread or a ribbon to be soldered to the back surface (aluminum electrode) 2 of the substrate.
  • the solder material is made of a material containing at least one of zinc (Zn), aluminum (Al), and silicon (Si) in tin (Sn) and not containing lead (Pb), silver (Ag), and copper (Cu). Alloy (referred to as ABS solder 11).
  • the melting point of the ABS solder 11 which depends on these solder materials is usually in the range of about 150 ° C. to 350 ° C. and is determined by the compounding ratio of the material.
  • a preheating temperature (a temperature not lower than room temperature at which the ABS solder 11 does not melt) is determined, and the soldering tip 22 is heated and melted when an ultrasonic wave is applied.
  • the appropriate temperature for soldering on top is determined experimentally. As a result, ultrasonic soldering as shown in the photos of FIGS. 9A, 9B, and 9C described later becomes possible, the tensile strength when the ribbon 22 is soldered is high, and the conversion of the solar cell is performed. The efficiency could be further increased.
  • the composition of the solder material of the ABS solder 11 is such that tin (Sn) is 20 to 95 wt%, zinc (Zn) is 3 to 60 wt%, and additives such as aluminum (Al) and silicon (Si) are added in appropriate amounts. These mixing ratios are determined optimally by experiments depending on the melting temperature and the target of ABS soldering such as a substrate or a ribbon.
  • the ABS solder material supply mechanism 12 is a mechanism for supplying the ABS solder 11 to the iron tip 12 at a predetermined speed (a predetermined amount of solder, which will be described later) in accordance with the moving speed of the iron tip 22 with respect to the substrate 1.
  • the ribbon 13 is soldered to a portion of the substrate 1 where holes are formed in the back surface (aluminum electrode) 2 or to a pre-soldered portion to take out current from the substrate 1 to the outside.
  • the ABS solder 11 is supplied as shown in FIG. 1A
  • preliminary soldering (ultrasonic soldering) is performed on the substrate 1 in the hole portion on the back surface 2 of the substrate, as shown in FIG. 1B.
  • the ribbon 13 is supplied while being superposed on the ABS solder 11, the ribbon 13 is soldered (ultrasonic soldering) to the substrate 1 in the hole portion on the back surface 2 of the substrate.
  • the ribbon is normally soldered (soldering without ultrasonic waves) to the pre-soldered portion in a later step.
  • a ribbon with solder in which the ABS solder 11 is soldered to the ribbon 13 in advance may be used.
  • the soldered ribbon needs to be soldered sufficiently to the ribbon 13 in advance so that the solder of about 0.1 mm or more protrudes from the edge of the hole onto the back surface (aluminum electrode) 2 of the substrate. is there.
  • the soldering iron 21 heats the iron tip 22 to a predetermined temperature and supplies ultrasonic waves.
  • the soldering iron tip 22 is attached to the tip of the soldering iron 21, applies ultrasonic waves to a portion to be soldered (a hole portion on the back surface 2 of the substrate, etc.), and supplies the melted ABS solder 11. It is to be soldered.
  • the soldering iron heating power supply 23 supplies power so that the ironing tip 22 has a predetermined temperature, and has an automatic temperature adjustment mechanism by detecting the temperature of the ironing tip 22 portion.
  • the soldering iron ultrasonic power generation mechanism 24 supplies an ultrasonic wave from the ironing tip 22 to a portion to be soldered (a hole or the like on the back surface 2 of the substrate).
  • the ultrasonic power may be about 1 to 10 W. If it is too weak, the ultrasonic soldering becomes defective. If it is too strong, the film (such as an aluminum electrode film) is destroyed by the ultrasonic wave, or conversely, the soldering is performed. Since it may be defective, the optimum power is determined by experiments. Usually, it is performed at 1 to several watts.
  • the moving mechanism 25 is a mechanism for automatically moving the soldering iron 21 at a predetermined speed, here, moving the soldering iron 21 rightward at a predetermined speed.
  • the predetermined speed is interlocked with the ABS solder material supply mechanism 12 that automatically supplies the ABS solder 11, and the ABS solder 11 is about 0.1 mm or more from the edge of the hole of the substrate back surface 2, and usually has an aluminum thickness of less than 3 mm.
  • the adjustment is performed so that the ABS solder 11 is soldered to the extent that it protrudes above the electrodes (adjusted by experiment, see FIG. 4 and its description).
  • the substrate (a rectangular substrate of about 150 mm) 1 is placed on a stand (not shown) having the preliminary heater 3 and adjusted to a temperature slightly lower than the melting of the ABS solder 11 (experimentally adjusting the temperature). Decide).
  • the soldering iron heating power supply 23 supplies power to heat the ironing tip 22 to a predetermined temperature, and the soldering iron ultrasonic power generation mechanism 24 generates ultrasonic waves to supply ultrasonic waves to the ironing tip 22 ( Since the heating temperature and the ultrasonic power vary depending on the material of the ABS solder 11, it is determined by experiment for each material).
  • the ultrasonic wave is supplied to the substrate 1 in the hole portion of the substrate back surface (aluminum electrode) 2 while melting the ABS solder 11 with the iron tip 22 (lightly pressed).
  • the moving mechanism 25 moves the iron tip 22 rightward in the drawing.
  • the ABS solder material supply mechanism 12 supplies the ABS solder 11 at a predetermined speed, and the melted ABS solder 11 protrudes from the edge of the hole on the substrate back surface 2 onto the substrate back surface (aluminum electrode) 2 by about 0.1 mm or more.
  • the moving speed of the iron tip 22 and the supply amount of the ABS solder 11 are experimentally determined so as to satisfy these relationships.
  • the heating temperature and the ultrasonic power are also adjusted. Do).
  • ABS solder 11 is soldered by protruding from the edge of the hole of the substrate 1 at the hole portion of the substrate back surface (aluminum electrode) 2 to the substrate back surface (aluminum electrode) 2 by about 0.1 mm to 3 mm.
  • the preliminary soldering of the ABS solder 11 or the soldering of the ribbon 13 with the ABS solder 11 is directly performed on the substrate 1 in the portion of the hole of the substrate back surface (aluminum electrode) 2 as described later.
  • the efficiency of the solar cell can be improved, and the ribbon can be firmly fixed to the substrate 1 by being directly soldered to the substrate 1 through the hole of the rear substrate 2 with the ABS solder 11. Become.
  • the substrate heating temperature (preliminary heating) was set at 180 ° C as standard, and at least the upper limit temperature was 200 ° C or less (below the temperature at which the ABS solder does not melt). Anything above this board was damaged.
  • the soldering iron temperature in this case is 400 ° C. It is about 500 °C at most. This is adjusted by the moving speed of the iron tip and the supply speed of the solder material. The higher the speed, the higher the temperature.
  • the ultrasonic output is less than 6 watts for the back side and less than 3 watts for the front side.
  • the above conditions are for a solder material with a melting point of about 217 ° C, which is mainly made of an alloy of tin and zinc.
  • FIG. 2 shows a flowchart (overall) for explaining the operation of the present invention.
  • S1 prepares a Si substrate.
  • step S2 a surface treatment is performed.
  • a nitride film is formed on the silicon substrate (for example, N-type) prepared in S1, and patterns such as finger electrodes and bus bar electrodes are formed.
  • a nitride film 32 is formed on the front side of a silicon substrate 31 and patterns such as a finger electrode 33 and a bus bar electrode 34 are formed in the same manner as in the conventional FIG.
  • step S3 a back surface process is performed.
  • an aluminum pattern is formed on the back surface of a silicon substrate, for example, an aluminum electrode having holes on the entire back surface of the silicon substrate is screen-printed with an aluminum paste. Then, the present invention proceeds to S5.
  • S5 is sintered.
  • the patterns formed by the surface treatment in S2 and the back surface treatment in S3 are sintered together.
  • finger electrodes, bus bar electrodes, and aluminum electrodes with holes on the back side were formed on the front side of the substrate in S1 to S3, S5.
  • step S6 measurement (1) is performed. This measures the electrical characteristics of the solar cell before ABS soldering using a probe before ABS soldering in S7 (see data before soldering in FIG. 5).
  • step S7 ABS soldering is performed.
  • the ABS solder is directly soldered to the portion of the Si substrate where the aluminum electrode has a hole, and the solder is protruded from the edge of the hole onto the aluminum electrode by about 0.1 mm or more.
  • the ribbons 13 may be soldered together (see FIG. 1B).
  • measurement (2) is performed. This measures the electrical characteristics of the solar cell after the ABS soldering in S7 (see data after soldering in FIG. 5).
  • a nitride film is formed on the surface of the Si substrate, patterns such as finger electrodes and bus bar electrodes are formed, and a pattern of an aluminum electrode having a hole on the back surface of the Si substrate is formed, and then sintered together.
  • a pattern can be formed.
  • a silver paste is further applied on the Si substrate.
  • a silver paste is screen-printed on a portion of the aluminum electrode having a hole formed by the back surface treatment in S3 to form a silver pattern on the Si substrate inside the hole of the aluminum electrode.
  • a nitride film is formed on the surface of the Si substrate, patterns such as finger electrodes and bus bar electrodes are formed, and a pattern of an aluminum electrode having a hole on the back surface of the Si substrate is formed.
  • FIG. 3 is a flowchart illustrating the detailed operation of the present invention. This is a detailed flowchart of the ABS soldering in S7 of FIG.
  • S11 preheats the substrate.
  • the substrate 1 is preheated by the substrate heater 3 with the substrate 1 of FIG. 1 placed on a stand (not shown), and heated to a temperature slightly lower than the temperature at which the ABS solder 11 melts.
  • step S12 the iron tip is heated and ultrasonic waves are applied. This is because power is supplied from the soldering iron heating power supply 23 of FIG. 1 to the soldering iron 21 to heat the ironing tip 22 to a predetermined temperature, and the soldering iron ultrasonic power generation mechanism 24 generates ultrasonic waves of a predetermined output. It is supplied to the iron tip 22.
  • Step S13 supplies ABS solder. This is because the ABS solder material supply mechanism 12 in FIG. 1 supplies the thread or ribbon-shaped ABS solder 11 at a predetermined speed between the iron tip 21 and a portion to be soldered. The supply amount of the ABS solder 11 is supplied so as to protrude by about 0.1 mm or more from the edge of the hole of the substrate back surface 2 and the edge of the hole onto the substrate back surface (aluminum electrode) 2 (see FIG. The supply amount is decided). When the ribbon 13 is to be soldered as shown in FIG. 1B, the ribbon 13 may be supplied over the ABS solder 11.
  • $ S14 moves the iron tip. This moves the iron tip 22 of FIG. 1 by the moving mechanism 25, and moves to the right in FIG.
  • the iron tip 22 is moved and ultrasonically soldered so that the ABS solder 11 protrudes from the edge of the hole on the substrate back surface 2 by approximately 0.1 mm or more from the edge of the hole on the substrate rear surface 2. It becomes possible.
  • FIG. 4 shows a sample photograph example of the present invention.
  • FIG. 4A shows a sample photograph having a contact width of about 0.1 mm
  • FIG. 4B shows a sample photograph having a contact width of about 0.5 mm
  • FIG. A sample photograph of 0 mm is shown.
  • the ABS solder 11 is so arranged that the horizontal strip in each photograph covers just above the strip-shaped hole of the back substrate 2 (protruding amount: about 0.1 mm, 0.5 mm, 1.0 mm).
  • protruding amount about 0.1 mm, 0.5 mm, 1.0 mm.
  • FIG. 4 are schematic side views of (a), (b), and (c) of FIG. 4, respectively.
  • the contact width is the amount of protrusion from the edge of the hole onto the substrate back surface (Al) 2, and shows examples of about 0.1 mm, 0.5 mm, and 1.0 mm.
  • a band-shaped hole is provided in the back substrate (aluminum electrode) 2 formed on the substrate (Si) 1, and the ABS solder 11 is ultrasonically soldered to the band-shaped hole (see FIG. a)), or by superimposing the ribbon 13 on the ABS solder 11 and performing ultrasonic soldering (see FIG. 1B), and adjusting the supply amount of the ABS solder 11 or the movement amount of the iron tip 22.
  • Ultrasonic soldering is performed so as to protrude from the edge of the hole on the back substrate (aluminum electrode) 2 by about 0.1 mm, 0.5 mm, and 1.0 mm.
  • FIG. 5 shows a measurement example of the present invention. This is a measurement example of the electric characteristics of the solar cell before (before soldering) and after (after soldering) the ABS soldering of FIGS. 4A, 4B, and 4C described above. Show. Each measurement example shows an average value of ten measurement examples. The measurement was performed at the center of a band-shaped hole on the back surface (aluminum electrode) 2 of the substrate in FIG. 4 (before soldering, the portion of the substrate 1 at the center of the hole, and after soldering, at the center of the soldered hole. The contact terminal was brought into contact with the contact portion to measure the electrical characteristics.
  • one, two, and three times of the measurement examples correspond to (a) contact width of about 0.1 mm, (b) contact width of about 0.5 mm, and (c) contact width of about 1.0 mm in FIG.
  • Isc indicates the short-circuit current of the solar cell
  • Voc indicates the open-circuit voltage of the solar cell
  • EFF indicates the maximum efficiency of the solar cell
  • FF indicates the maximum efficiency of the solar cell / (VocxIsc).
  • Before soldering indicates a value before soldering the ABS solder
  • "After soldering” indicates a value after soldering the ABS solder
  • “Change amount” indicates a change amount from before soldering to after soldering.
  • the maximum efficiency (EFF) is ⁇
  • the change amount is -0.40 for "one time” (contact width: about 0.1 mm).
  • "2 times” contact width about 0.5 mm
  • has a change of -0.18 "3 times” contact width about 1.0mm
  • the amount of change in the maximum efficiency from “before soldering” to “after soldering” decreases, that is, the ABS solder 11 is moved from the edge of the hole of the aluminum electrode (back surface of the substrate) 2 to the aluminum electrode 2. It was found for the first time in the present experiment that the change in the maximum efficiency from "before soldering” to “after soldering” became smaller as the protrusion amount increased to about 0.1 mm, 0.5 mm, and 1.0 mm.
  • the ABS solder 11 protrudes from the edge of the hole of the aluminum electrode (substrate back surface) 2 by increasing the amount of protrusion from the edge of the hole to the aluminum electrode 2 to about 0.1 mm, 0.5 mm, and 1.0 mm.
  • a path in which electrons are emitted from the portion of the ABS solder 11 (0.1 mm, 0.5 mm, 1.0 mm) to the substrate 1 through the aluminum electrode is added (increased), and the maximum efficiency is improved by that amount. It is.
  • FIG. 1 is a configuration diagram of one embodiment of the present invention.
  • 5 is a flowchart (overall) illustrating the operation of the present invention.
  • 4 is a detailed operation explanatory flowchart of the present invention. It is a sample photograph example of the present invention. It is a measurement example of the present invention. It is explanatory drawing of a prior art.

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  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)

Abstract

La présente invention porte sur une photopile et sur son procédé de fabrication, et vise à permettre : de souder directement une partie d'un trou dans une électrode en aluminium (2) de la surface arrière d'un substrat (1), et de réaliser une soudure s'étendant 0,1 mm ou plus au-dessus de l'électrode en aluminium (2) ; d'augmenter l'efficacité de conversion ; et d'obtenir une résistance de fixation suffisante. À cet effet, soit un trou est ménagé sur une partie de l'électrode en aluminium (2) après formation de l'électrode sur l'ensemble de la surface arrière du substrat (1), soit l'électrode en aluminium (2) est formée avec un trou ménagé dans une partie de l'ensemble de la surface arrière du substrat (1). Le substrat (1) dans le trou est soudé, et le soudage est également effectué de manière à s'étendre à au moins 0,1 mm sur le côté supérieur de l'électrode en aluminium (2) par rapport au bord du trou. Des électrons sont individuellement amenés à circuler depuis la partie du substrat (1) dans le trou soudé et la partie de l'électrode en aluminium (2) faisant saillie à 0,1 mm ou plus du bord du trou de façon à augmenter l'efficacité de conversion de la photopile.
PCT/JP2019/024850 2018-06-26 2019-06-22 Photopile et son procédé de fabrication Ceased WO2020004290A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201980042980.2A CN112352320A (zh) 2018-06-26 2019-06-22 太阳能电池及太阳能电池的制造方法
JP2020527491A JPWO2020004290A1 (ja) 2018-06-26 2019-06-22 太陽電池および太陽電池の製造方法
KR1020217002095A KR20210022108A (ko) 2018-06-26 2019-06-22 태양전지 및 태양전지의 제조방법

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Application Number Priority Date Filing Date Title
JP2018120722 2018-06-26
JP2018-120722 2018-06-26

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WO2020004290A1 true WO2020004290A1 (fr) 2020-01-02

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KR (1) KR20210022108A (fr)
CN (1) CN112352320A (fr)
TW (1) TWI714127B (fr)
WO (1) WO2020004290A1 (fr)

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JP7576805B2 (ja) * 2020-10-01 2024-11-01 アートビーム株式会社 低温半田、低温半田の製造方法、および低温半田被覆リード線

Citations (7)

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JP2005243790A (ja) * 2004-02-25 2005-09-08 Kyocera Corp 太陽電池装置
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