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WO2020090784A1 - Electromagnetic-wave detecting device and electromagnetic-wave detecting system - Google Patents

Electromagnetic-wave detecting device and electromagnetic-wave detecting system Download PDF

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Publication number
WO2020090784A1
WO2020090784A1 PCT/JP2019/042281 JP2019042281W WO2020090784A1 WO 2020090784 A1 WO2020090784 A1 WO 2020090784A1 JP 2019042281 W JP2019042281 W JP 2019042281W WO 2020090784 A1 WO2020090784 A1 WO 2020090784A1
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Prior art keywords
electromagnetic wave
wave detection
bias voltage
voltage applied
control unit
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Ceased
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PCT/JP2019/042281
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French (fr)
Japanese (ja)
Inventor
田中　博之
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Pioneer Corp
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Pioneer Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode

Definitions

  • the present invention relates to an electromagnetic wave detection device and an electromagnetic wave detection system.
  • Patent Document 1 discloses a wireless transmission device including a terahertz oscillation detection element.
  • Patent Document 1 describes a resonant tunneling diode (Resonant Tunneling Diode, hereinafter referred to as RTD) as an example of a terahertz oscillation detecting element.
  • RTD resonant tunneling diode
  • the detection sensitivity of an electromagnetic wave to a bias voltage varies depending on conditions such as temperature, humidity, and usage time.
  • an electromagnetic wave detection device including a plurality of electromagnetic wave generation elements, shortening the time required for the bias voltage determination operation of all the electromagnetic wave generation elements can be mentioned.
  • the invention according to claim 1 is A plurality of electromagnetic wave detection elements, A plurality of voltage application units that apply a bias voltage to each of the plurality of electromagnetic wave detection elements, A control unit for controlling the plurality of voltage application units, Equipped with The control unit uses the determination result of the bias voltage applied to one electromagnetic wave detection element of the plurality of electromagnetic wave detection elements to determine the bias voltage applied to each of at least one other electromagnetic wave detection element. decide, It is an electromagnetic wave detection device.
  • the invention described in claim 10 is An electromagnetic wave detection device according to any one of claims 1 to 9, An electromagnetic wave generation device for generating an electromagnetic wave detected by the plurality of electromagnetic wave detection elements, It is an electromagnetic wave detection system equipped with.
  • FIG. 7 is a flow chart of a determination operation of a bias voltage applied to all the electromagnetic wave detection elements of the first embodiment. It is a flowchart of step S100 in the flowchart of FIG. It is a flowchart of step S200 in the flowchart of FIG. It is a block diagram of an electromagnetic wave detection device of a 2nd embodiment.
  • FIG. 1 is a schematic diagram of an electromagnetic wave detection system 10 of this embodiment.
  • the electromagnetic wave detection system 10 of the present embodiment includes an electromagnetic wave transmission / reception unit 20, a control unit 30, a bias voltage generation unit 40, a signal amplification unit 50, and a thermometer 60 (an example of a temperature measurement unit).
  • the electromagnetic wave detection system 10 has, for example, a function of irradiating the measurement object MO with electromagnetic waves, detecting the electromagnetic waves reflected by the measurement object MO, and measuring the shape and the like of the measurement object MO.
  • the electromagnetic wave transmission / reception unit 20 includes a generation unit 21 (an example of an electromagnetic wave generation device), a collimator lens 22, a beam splitter 23, an objective lens 24, a condenser lens 25, and a detection unit 26.
  • the generator 21 has an electromagnetic wave generator 21A and a horn antenna 21B.
  • the detection unit 26 has an electromagnetic wave detection unit 26A and a horn antenna 26B.
  • the generating unit 21, the collimating lens 22, and the beam splitter 23 are arranged in a linear arrangement.
  • these arrangement directions are defined as the X direction.
  • the beam splitter 23, the condenser lens 25, and the detection unit 26 are arranged in a state of being linearly arranged along the direction orthogonal to the X direction.
  • these arrangement directions are defined as the Y direction.
  • a direction orthogonal to the X direction and the Y direction is defined as the Z direction.
  • the combination of the detection unit 26, the control unit 30, the bias voltage generation unit 40, and the signal amplification unit 50 is defined as the electromagnetic wave detection device 70 (see FIG. 1).
  • the electromagnetic wave generation unit 21A has, for example, a long substrate (not shown) along the Z direction and a plurality of electromagnetic wave generation elements (not shown).
  • the plurality of electromagnetic wave generation elements are arranged in a state of being arranged from one end side to the other end side of the substrate along the Z direction.
  • the plurality of electromagnetic wave generation elements included in the electromagnetic wave generation unit 21A are, for example, RTDs that generate terahertz waves.
  • terahertz waves are said to be electromagnetic waves having a shorter wavelength than infrared rays and a longer wavelength than millimeter waves.
  • Terahertz waves are electromagnetic waves that have both the properties of light waves and radio waves. For example, they pass through (or easily pass through) cloth, paper, wood, plastic, ceramics, etc., but do not pass through metal, water, etc. (or It is difficult to penetrate).
  • the frequency of the terahertz wave is an electromagnetic wave having a frequency of about 1 THz (wavelength corresponds to about 300 ⁇ m), but its range is not generally defined clearly. Therefore, in this specification, the range of the wavelength of the terahertz wave is defined as a range of 70 GHz or more and 10 THz or less.
  • the plurality of electromagnetic wave generation elements included in the electromagnetic wave generation unit 21A may not be RTDs as long as they are elements that generate terahertz waves.
  • the measurer sets the measurement object MO at the determined measurement position.
  • the control unit 30 follows the control program CP stored in the storage unit 32 in the control unit 30, and the electromagnetic wave transmission / reception unit 20 and the bias. Control of the voltage generator 40 and the signal amplifier 50 is started. After the control is started, the electromagnetic wave detection system 10 operates as follows.
  • the control unit 30 controls the bias voltage generation unit 40 to generate the bias voltage applied to each of the electromagnetic wave generation unit 21A and the electromagnetic wave detection unit 26A.
  • the generation unit 21 (the plurality of electromagnetic wave generation elements included in the electromagnetic wave generation unit 21A) emits an electromagnetic wave (in this case, a terahertz wave) modulated at a constant frequency.
  • the electromagnetic wave emitted from the generator 21 is applied to the measurement object MO via the collimator lens 22, the beam splitter 23, and the objective lens 24.
  • the electromagnetic wave reflected by the measurement object MO enters the detection unit 26 via the objective lens 24, the beam splitter 23, and the condenser lens 25.
  • the electromagnetic wave detection unit 26A of the detection unit 26 detects the electromagnetic wave reflected by the measurement object MO.
  • the electromagnetic wave detection unit 26A outputs a received signal corresponding to the detected electromagnetic wave to the signal amplification unit 50.
  • the signal amplification unit 50 amplifies the reception signal received from the electromagnetic wave detection unit 26A and outputs it to the control unit 30.
  • the control unit 30 generates a mapped image based on the reception signal received from the signal amplification unit 50, and analyzes the shape and the like of the measurement object MO.
  • the shape or the like of the measurement object MO is measured, and the measurement operation by the electromagnetic wave detection system 10 of the present embodiment ends.
  • the electromagnetic wave detection device 70 which is the main part of this embodiment, will be described with reference to the drawings. First, a specific configuration of the electromagnetic wave detection device 70 of this embodiment will be described. Next, the operation of determining the bias voltage in the electromagnetic wave detection device 70 of this embodiment will be described.
  • the electromagnetic wave detection device 70 of the present exemplary embodiment includes a detection unit 26, a control unit 30, a bias voltage generation unit 40, a signal amplification unit 50, and a thermometer 60 (an example of a temperature measurement unit. ) And. Moreover, the electromagnetic wave detection device 70 includes a plurality of bias BTs as shown in FIG.
  • the detection unit 26 has the electromagnetic wave detection unit 26A as described above.
  • the electromagnetic wave detection unit 26A has a substrate 26A1 and a plurality of electromagnetic wave detection elements 26A2.
  • the substrate 26A1 is, for example, long and is arranged with its longitudinal direction along the Z direction and its thickness direction oriented in the Y direction.
  • the board 26A1 is a so-called printed wiring board on which a wiring pattern for mounting the plurality of electromagnetic wave detection elements 26A2 and for connecting an output terminal (not shown) of the bias voltage generation unit 40 is formed.
  • the plurality of electromagnetic wave detection elements 26A2 are mounted in a line on the surface of the substrate 26A1 facing the beam splitter 23 side in a line along the Z direction.
  • the plurality of electromagnetic wave detection elements 26A2 in this embodiment are, for example, RTDs that generate terahertz waves.
  • the number N of the plurality of electromagnetic wave detection elements 26A2 will be described as 25 as an example. Further, among the plurality of electromagnetic wave detecting elements 26A2, one electromagnetic wave detecting element at the center of the row is referred to as "specific element 26C" (an example of one electromagnetic wave detecting element), and other than the specific element 26C is referred to as “non-specific element 26D" ( Another example of at least one electromagnetic wave detection element).
  • the number N is set to 25 for the sake of convenience, but the number N may be 2 or more, that is, 25 if it is plural.
  • the electromagnetic wave element at the center of the row of the plurality of electromagnetic wave detection elements 26A2 does not exist.
  • one of the two electromagnetic wave detection elements 26A2 is used as the specific element 26C.
  • the other is the non-specific element 26D.
  • the specific element 26C is one electromagnetic wave detecting element at the center of the row of the plurality of electromagnetic wave detecting elements 26A2, but the "center” here is defined from one end and the other end in the order of arrangement. It means the same order of counting (13th from one end and the other end in the case of this embodiment). However, it may be at the “center side” instead of the center. The "center side” here means the side closer to the center than both ends of the row.
  • FIG. 3 is a graph showing an example of voltage-current characteristics of each electromagnetic wave detection element 26A2 of the present embodiment.
  • FIG. 4 is a graph showing an example of the relationship between the applied bias voltage and the electromagnetic wave detection sensitivity in each electromagnetic wave detection element 26A2 of the present embodiment.
  • each electromagnetic wave detection element 26A2 of this embodiment is an RTD as an example.
  • the RTD has a differential negative resistance region showing a differential negative resistance characteristic in the current-voltage characteristic of its operation region (see the range from point B to point C in the graph of FIG. 3).
  • the RTD has a non-linear region that exhibits strong non-linear characteristics near the differential negative resistance region (see the range from point A to point B in the graph of FIG. 3). Then, the RTD functions as an electromagnetic wave generation element when a bias voltage corresponding to the differential negative resistance region is applied.
  • the RTD functions as an electromagnetic wave detection element when a bias voltage corresponding to a non-linear region is applied.
  • the non-linear region is a relatively narrow range. Therefore, in order to stably operate the RTD as an electromagnetic wave detection element, it is necessary to control the bias voltage with high accuracy.
  • points A and B in the graph of FIG. 4 correspond to points A and B in the graph of FIG. 3, respectively.
  • the detection sensitivity of the electromagnetic wave by the RTD is higher as the bias voltage is higher in the range from point A to point B.
  • the bias voltage exceeds the voltage corresponding to the point B, that is, the voltage at which the detection sensitivity becomes maximum
  • the RTD detection sensitivity sharply decreases. Therefore, the RTD does not function as an electromagnetic wave detection element capable of detecting a terahertz wave when a bias voltage higher than the voltage corresponding to the point B is applied.
  • the applied bias voltage needs to be in the range from point A to point B (see the detection operation range in the graph of FIG. 4). is there.
  • the bias voltage corresponding to the point B is applied to the RTD, the detection sensitivity of the electromagnetic wave by the RTD as the electromagnetic wave detection element can be maximized.
  • good operation is performed in a range larger than the point A and smaller than the point B and closer to the point B than the point A (see the range from the point D to the point E in the graph of FIG. 4).
  • the range is set, and the median value of the voltage in this range is set as the bias voltage. The reason for doing this is to balance the detection sensitivity of the electromagnetic wave and the stability of the electromagnetic wave detection operation.
  • FIG. 5 is a block diagram of the electromagnetic wave detection device 70 of this embodiment.
  • the bias voltage generation unit 40 is composed of individual generation units of the number corresponding to the number N (25 in this embodiment as an example) of the plurality of electromagnetic wave detection elements 26A2.
  • the plurality of individual generation units are an individual generation unit 40C (an example of one electromagnetic wave detection element) and a plurality (24 in the present embodiment) of individual generation units 40D.
  • the combination of the individual generation unit 40C and the plurality of individual generation units 40D is an example of the plurality of voltage application units.
  • the individual generation unit 40C (an example of a voltage application unit that applies a bias voltage to one electromagnetic wave detection element) has a function of generating a bias voltage applied to the specific element 26C of the plurality of electromagnetic wave detection elements 26A2.
  • each of the plurality of individual generation units 40D has a function of generating a bias voltage applied to each of the plurality of non-specific elements 26D.
  • one bias tee BT among a plurality of (25 in the present embodiment) bias BTs is arranged.
  • the bias voltage generated by the individual generation unit 40C is applied to the specific element 26C via the bias BT.
  • one bias tee BT is arranged between each of the plurality of individual generation units 40D and each of the plurality of non-specific elements 26D.
  • the bias voltage generated by each individual generation unit 40D is applied to each non-specific element 26D via each bias BT.
  • the bias voltage applied to each electromagnetic wave detection element 26A2 is a DC voltage.
  • the reception signal output from each electromagnetic wave detection element 26A2 is an AC signal (AC voltage).
  • each electromagnetic wave detection element 26A2 and each bias BT a direct current component caused by the bias voltage and an alternating current component caused by the received signal are combined.
  • each bias BT only the AC component caused by the received signal is extracted, and the extracted AC component is input to each signal amplification unit 50 as a received signal.
  • the signal amplification section 50 is composed of a plurality of individual amplification sections 50A. Each individual amplification unit 50A is arranged between each bias BT and the control unit 30, and electrically connects each bias BT and the control unit 30.
  • the storage unit 32 of the control unit 30 stores in advance data regarding the electrical characteristics of the plurality of electromagnetic wave detection elements 26A2 (the specific element 26C and the plurality of non-specific elements 26D).
  • the said data are data regarding the correlation of the bias voltage applied to each electromagnetic wave detection element 26A2.
  • the data relates to the correlation of the reference value of the bias voltage applied to each of the plurality of electromagnetic wave detection elements 26A2 (the specific element 26C and the plurality of non-specific elements 26D).
  • the reference value of the bias voltage of each electromagnetic wave detection element 26A2 is a bias applied when each electromagnetic wave detection element 26A2 detects an electromagnetic wave under a predetermined condition (for example, the temperature in the main body of the apparatus). It means the value of voltage.
  • the reference values of the respective electromagnetic wave detection elements 26A2 are different due to the reasons described later.
  • each electromagnetic wave detection element 26A2 also vary due to manufacturing variations and the like. Therefore, when a voltage is applied to each electromagnetic wave detection element 26A2 under equivalent conditions (conditions such as temperature), the shapes of the graphs shown in FIGS. 3 and 4 are slightly displaced. That is, when the graphs shown in FIGS. 3 and 4 are created for each electromagnetic wave detection element 26A2, the voltage range that is the non-linear region of the graph of FIG. 3 and the voltage that is the good operating region of the graph of FIG. The ranges are slightly different.
  • thermometer 60 has a function of measuring the temperature inside the device body of the electromagnetic wave detection device 70, in other words, inside the device body of the electromagnetic wave detection system 10.
  • the thermometer 60 can communicate with the control unit 30. Therefore, when the thermometer 60 measures the temperature, information about the temperature is transmitted to the control unit 30.
  • the technical meaning of measuring the temperature inside the apparatus main body by the thermometer 60 will be described in the operation of determining the bias voltage by the electromagnetic wave detection apparatus 70 of the present embodiment.
  • FIG. 6 is a flowchart of the operation of determining the bias voltage applied to all the electromagnetic wave detection elements 26A2 (specific element 26C and all non-specific elements 26D) of the present embodiment.
  • FIG. 7 is a flowchart of step S100 in the flowchart of FIG.
  • FIG. 8 is a flowchart of step S200 in the flowchart of FIG.
  • the determination operation of the bias voltage of the present embodiment is performed, for example, when the thermometer 60 measures a predetermined temperature. Note that this timing is, for example, other than when the electromagnetic wave detection device 70 is operating. Further, the predetermined temperature may be one level of temperature or a plurality of levels of temperature.
  • thermometer 60 measures a predetermined temperature and sends information about the temperature to the control unit 30.
  • the control unit 30 starts the bias voltage determination operation (“start” in the flowchart of FIG. 6).
  • step S100 is a step of determining the bias voltage applied to the specific element 26C (see FIG. 7).
  • step S200 is a step of determining the bias voltage applied to each of all the non-specific elements 26D using the determination result of step S100.
  • Step S100 is executed as in the flow chart shown in FIG.
  • the control unit 30 uses the bias voltage generation unit 40 to apply a bias voltage to the generation unit 21 and cause the generation unit 21 to emit an electromagnetic wave (see FIG. 1).
  • the electromagnetic wave emitted from the generation unit 21 is applied to the measurement object MO via the collimator lens 22, the beam splitter 23, and the objective lens 24.
  • the electromagnetic wave reflected by the measurement object MO enters the detection unit 26 via the objective lens 24, the beam splitter 23, and the condenser lens 25.
  • the generator 21 emits electromagnetic waves until the end of step S100.
  • control unit 30 controls the individual generation unit 40C (see FIG. 5) so as to initialize the bias voltage applied to the specific element 26C (step S101).
  • control unit 30 controls the individual generation unit 40C so as to increase the bias voltage applied to the specific element 26C by the predetermined value ⁇ V1 from the current value (step S102).
  • control unit 30 receives the reception signal output from the specific element 26C via the bias BT and the individual amplification unit 50A, and detects the signal amplitude of the reception signal (step S103).
  • the control unit 30 compares the previously detected signal amplitude with the currently detected signal amplitude and determines whether or not the signal amplitude has decreased (step S104).
  • the signal amplitude corresponds to the detection sensitivity of the specific element 26C.
  • the detection sensitivity is increased until the detection sensitivity exceeds the maximum voltage (voltage at point B). Increases monotonically, and the detection sensitivity sharply decreases when the voltage exceeds the maximum detection sensitivity.
  • step S104 determines that the signal amplitude has decreased
  • step S104 determines that the individual generation unit 40C decreases the bias voltage from the current value by the predetermined value ⁇ V2 (> ⁇ V1). Is controlled (step S105).
  • step S105 determines the voltage obtained in step S105 as the bias voltage applied to the specific element 26C. If the control unit 30 determines that the signal amplitude is not small (No in step S104, that is, negative determination), step S102 is executed again.
  • step S100 the bias voltage of the specific element 26C is determined. From another perspective of step S100, it can be said that step S100 is a step of identifying the relationship between the bias voltage and the electromagnetic wave detection sensitivity in the identifying element 26C.
  • step S200 the control unit 30 determines the bias voltage applied to each of all the non-specific elements 26D by using the determination result of step S100. Specifically, it is as follows.
  • control unit 30 calculates a difference ⁇ V between the determined bias voltage applied to the specific element 24C and the reference value of the bias voltage of the specific element 24C (step S201).
  • the reference value of the bias voltage of the specific element 24C is stored in the storage unit 32.
  • the control unit 30 uses the difference ⁇ V calculated in S201 and the reference value of the bias voltage of all the non-specific elements 26D stored in the storage unit 32 to apply the bias voltage to each of the non-specific elements 26D. To decide. Specifically, the control unit 30 adds the correction value ⁇ X corresponding to the difference ⁇ V to the reference value of each non-specific element 26D according to the magnitude of the difference ⁇ V, and the bias voltage of all the non-specific elements 26D. To decide. In this case, the correction value ⁇ X is a preset value, but ⁇ X may be equal to ⁇ V, or ⁇ X may be uniquely determined by ⁇ V depending on the electrical property of the electromagnetic wave detection element 26A2 used.
  • step S200 the bias voltages of all the electromagnetic wave detection elements 26A2 (specific element 26C and all non-specific elements 26D) are determined, and the bias voltage determination operation of the present embodiment ends.
  • the control unit 30 performs the bias voltage determination operation immediately before the detection operation of the electromagnetic wave reflected by the measurement object MO (an example of the object) irradiated with the electromagnetic wave.
  • the first effect is that the control unit 30 determines the bias voltage applied to each of all the non-specific elements 26D by using the determination result of the bias voltage applied to the specific element 26C.
  • the first effect is that the control unit 30 determines the bias voltage applied to the specific element 26C, and all the non-specific elements 26D are determined from the relationship between the reference value of each bias voltage and the bias voltage of the specific element 26C. Is the effect of determining the bias voltage applied to each of the. For example, if the bias voltages to be applied to all the electromagnetic wave detection elements 26A2 (the specific elements 26C and all the non-specific elements 26D) are determined one by one in order, the operation for determining the bias voltage takes time corresponding to these numbers. Is required.
  • the electromagnetic wave detection device 70 of the present embodiment as shown in the flow chart of the bias voltage determination operation of FIG. 6, first, the bias voltage applied to the specific element 26C is determined. Then, the determination result based on this determination is used to determine the bias voltage applied to each of all the non-specific elements 26D. Therefore, according to the electromagnetic wave detection device 70 of the present embodiment, the time required for the bias voltage determination operation is shortened as compared with the mode in which the bias voltages applied to all the electromagnetic wave detection elements 26A2 are sequentially determined one by one. To do. Along with this, the electromagnetic wave detection system 10 of the present embodiment reduces the time required for the bias voltage determination operation when the command to start the measurement operation of the measurement target MO is issued during the bias voltage determination operation.
  • the measurement operation can be started earlier. Note that this effect is achieved even when the electromagnetic wave detection element does not have electrical characteristics like the RTD (see the graph in FIG. 3), but in particular, as in the case of the present embodiment, the electromagnetic wave detection element 26A2 has the RTD. It can be said to be effective in some cases.
  • the second effect is the effect that the specific element 26C is arranged at the center or on the center side of the line arranged in a line formed by the plurality of electromagnetic wave detection elements 26A2.
  • the plurality of electromagnetic wave detection elements 26A2 detect the electromagnetic waves emitted from the plurality of electromagnetic wave generation elements of the generation unit 21 when detecting the electromagnetic waves. Then, the plurality of electromagnetic waves from the plurality of electromagnetic wave generation elements arrive at the detection unit 26 in a state of being superposed. In this case, the electromagnetic waves reaching the plurality of electromagnetic wave detection elements 26A2 arranged in a line have weaker intensity at both ends than at the center side.
  • the specific element 26C is arranged in the center or on the center side of the line-shaped row composed of the plurality of electromagnetic wave detection elements 26A2 (see FIG. 2). Therefore, in the case of the present embodiment, electromagnetic waves having a stable intensity reach as compared with the form in which the specific element 26C is arranged at one of both ends of the row. Further, the form in which the specific element 26C is arranged in the center of the column is larger than the form in which the specific element 26C is arranged at one of both ends of the column, the non-specific element 26D located farthest from the specific element 26C. The distance between and can be shortened.
  • the electromagnetic wave detection device 70 of the present embodiment can perform the bias voltage determination operation more stably than the configuration in which the specific element 26C is arranged at one of both ends of the row.
  • the electromagnetic wave detection system 10 of the present embodiment can easily set a stable bias voltage, and thus can perform a stable measurement operation. Note that this effect is achieved even when the electromagnetic wave detection element does not have electrical characteristics like the RTD (see the graph in FIG. 3), but in particular, as in the case of the present embodiment, the electromagnetic wave detection element 26A2 has the RTD. It can be said to be effective in some cases.
  • thermometer 60 is provided and the bias voltage determination operation is performed when the thermometer 60 measures a predetermined temperature.
  • the bias voltage determination operation cannot be performed due to the temperature change in the apparatus body.
  • the electromagnetic wave detection device 70 of the present embodiment includes the thermometer 60, and performs the bias voltage determination operation when the thermometer 60 measures a predetermined temperature (see FIG. 1). Therefore, according to the electromagnetic wave detection device 70 of the present embodiment, the bias voltage determination operation can be performed according to the temperature change in the device body.
  • the electromagnetic wave detection system 10 of the present embodiment can perform the measurement operation of the measurement target MO in which the variation in the electromagnetic wave detection accuracy of the electromagnetic wave detection element 26A2 due to the temperature change is reduced. Note that this effect is achieved even when the electromagnetic wave detection element does not have electrical characteristics like the RTD (see the graph in FIG. 3), but in particular, as in the case of the present embodiment, the electromagnetic wave detection element 26A2 has the RTD. It can be said to be effective in some cases.
  • the electromagnetic wave detection device 70A (electromagnetic wave detection system 10A) of this embodiment includes an electromagnetic wave generation element 80 for generating an electromagnetic wave required when the specific element 26C performs a bias voltage determination operation.
  • the specific element 26C is not used during the measurement operation of the measurement object MO by the electromagnetic wave detection system 10A. The above is the difference between the first embodiment and the first embodiment.
  • the present embodiment is effective in that it is not necessary to dispose the measurement object MO at a predetermined measurement position in the bias voltage determination operation (see FIGS. 6 and 7). I can say.
  • the other effects of this embodiment are similar to those of the first embodiment.
  • the present invention has been described by taking the first embodiment and the second embodiment as examples, but the present invention is not limited to these embodiments.
  • the technical scope of the present invention includes, for example, the following forms (modifications).
  • the electromagnetic wave detection system 10 is, as an example, a device that measures the shape or the like of the measurement target MO using electromagnetic waves.
  • the electromagnetic wave detection system may have a shape such as the shape of the measurement object MO. Does not have to be a device for measuring. For example, various sensors, tomography, and other systems may be used.
  • the above modified example can also be applied to the second embodiment.
  • the electromagnetic wave detection device 70 includes the thermometer 60, and the bias voltage determination operation is performed when the thermometer 60 measures a predetermined temperature.
  • a humidity measuring unit (not shown, but refer to FIG. 1) may be used.
  • the control unit 30 may perform the bias voltage determination operation when the humidity measuring unit measures a predetermined humidity.
  • the thermometer 60 is used as the humidity measuring unit, but the electromagnetic wave detection device 70 may include the thermometer 60 and the humidity measuring unit.
  • the bias voltage determination operation can be performed according to the temperature change and the humidity change in the apparatus main body.
  • the bias voltage determination operation is performed according to changes in one or both of temperature and humidity.
  • the start timing of the bias voltage determination operation may not depend on changes in one or both of temperature and humidity.
  • it may be performed when the power of the apparatus main body is turned on.
  • the electromagnetic wave detection device 70 is provided with a clock (timer, not shown, but FIG. 1 is incorporated) arranged in the main body of the device, and the bias voltage determination operation is performed by the clock measuring a predetermined time. You may do it when you do.
  • the specific element 26C is arranged in the center of the row of the plurality of electromagnetic wave detection elements 26A2 arranged in a line.
  • the specific element 26C does not have to be arranged at the center or the center side of the row.
  • the specific element 26C may be arranged at one of both ends of the row. In the case of this modification, it is difficult to achieve the second effect of the first embodiment, but the first effect of the first embodiment is achieved.

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Abstract

The present invention provides an electromagnetic-wave detecting device including: a plurality of electromagnetic-wave detecting elements; a plurality of voltage application units that respectively apply bias voltages to the plurality of electromagnetic-wave detecting elements; and a control unit that controls the plurality of voltage application units, wherein the control unit uses a determination result of the bias voltage to be applied to one electromagnetic-wave detecting element of the plurality of electromagnetic-wave detecting elements, to determine the bias voltage to be applied to at least one of the other electromagnetic-wave detecting elements. Then, said one electromagnetic-wave detecting element is disposed at or near the center of the row of the plurality of electromagnetic-wave detecting elements.

Description

電磁波検出装置及び電磁波検出システムElectromagnetic wave detection device and electromagnetic wave detection system

　本発明は、電磁波検出装置及び電磁波検出システムに関する。 The present invention relates to an electromagnetic wave detection device and an electromagnetic wave detection system.

　例えば特許文献１には、テラヘルツ発振検出素子を備えた無線伝送装置が開示されている。特許文献１には、テラヘルツ発振検出素子の例として共鳴トンネルダイオード（Resonant Tunneling Diode、以下、ＲＴＤという。）が記載されている。 For example, Patent Document 1 discloses a wireless transmission device including a terahertz oscillation detection element. Patent Document 1 describes a resonant tunneling diode (Resonant Tunneling Diode, hereinafter referred to as RTD) as an example of a terahertz oscillation detecting element.

特開２０１３－００５１１５号公報JP, 2013-005115, A

　ＲＴＤのような電磁波検出素子は、例えば、温度、湿度、使用時間等の条件により、バイアス電圧に対する電磁波の検出感度が変動する。これらの条件に関係なく電磁波の検出感度を一定のレベルに保つためには、電磁波検出素子に印加するバイアス電圧を検出感度に応じて決定することが好ましい。そのため、複数の電磁波検出素子を備えた装置の場合には、電磁波検出素子ごとにバイアス電圧を決定することが好ましい。
　しかしながら、複数の電磁波検出素子を備えた装置の各電磁波検出素子に印加するバイアス電圧の決定を１個ずつ順番に行うとすると、この装置のバイアス電圧の決定にはすべての電磁波検出素子の数量分の時間が必要になる。 In an electromagnetic wave detection element such as an RTD, the detection sensitivity of an electromagnetic wave to a bias voltage varies depending on conditions such as temperature, humidity, and usage time. In order to maintain the electromagnetic wave detection sensitivity at a constant level regardless of these conditions, it is preferable to determine the bias voltage applied to the electromagnetic wave detection element according to the detection sensitivity. Therefore, in the case of an apparatus including a plurality of electromagnetic wave detection elements, it is preferable to determine the bias voltage for each electromagnetic wave detection element.
However, if the bias voltage to be applied to each electromagnetic wave detecting element of an apparatus having a plurality of electromagnetic wave detecting elements is determined one by one, the bias voltage of this apparatus is determined by the number of all electromagnetic wave detecting elements. Will need time.

　本発明が解決しようとする課題としては、複数の電磁波発生素子を備えた電磁波検出装置において、すべての電磁波発生素子のバイアス電圧の決定動作に要する時間を短くすることが一例として挙げられる。 As an example of a problem to be solved by the present invention, in an electromagnetic wave detection device including a plurality of electromagnetic wave generation elements, shortening the time required for the bias voltage determination operation of all the electromagnetic wave generation elements can be mentioned.

　請求項１に記載の発明は、
　複数の電磁波検出素子と、
　前記複数の電磁波検出素子のそれぞれにバイアス電圧を印加する複数の電圧印加部と、
　前記複数の電圧印加部を制御する制御部と、
　を備え、
　前記制御部は、前記複数の電磁波検出素子のうちの一の電磁波検出素子に印加される前記バイアス電圧の決定結果を用いて他の少なくとも１つの電磁波検出素子のそれぞれに印加される前記バイアス電圧を決定する、
　電磁波検出装置である。 The invention according to claim 1 is
A plurality of electromagnetic wave detection elements,
A plurality of voltage application units that apply a bias voltage to each of the plurality of electromagnetic wave detection elements,
A control unit for controlling the plurality of voltage application units,
Equipped with
The control unit uses the determination result of the bias voltage applied to one electromagnetic wave detection element of the plurality of electromagnetic wave detection elements to determine the bias voltage applied to each of at least one other electromagnetic wave detection element. decide,
It is an electromagnetic wave detection device.

　請求項１０に記載の発明は、
　請求項１～９のいずれか１項に記載の電磁波検出装置と、
　前記複数の電磁波検出素子が検出する電磁波を発生させる電磁波発生装置と、
　を備える電磁波検出システムである。 The invention described in claim 10 is
An electromagnetic wave detection device according to any one of claims 1 to 9,
An electromagnetic wave generation device for generating an electromagnetic wave detected by the plurality of electromagnetic wave detection elements,
It is an electromagnetic wave detection system equipped with.

　上述した目的、およびその他の目的、特徴および利点は、以下に述べる好適な実施の形態、およびそれに付随する以下の図面によってさらに明らかになる。 The above-described object, other objects, features and advantages will be further clarified by the preferred embodiment described below and the following drawings accompanying it.

第１実施形態の電磁波検出システムの概略図である。It is a schematic diagram of an electromagnetic wave detection system of a 1st embodiment. 第１実施形態の電磁波検出装置を構成する電磁波検出部の斜視図である。It is a perspective view of the electromagnetic wave detection part which comprises the electromagnetic wave detection apparatus of 1st Embodiment. 第１実施形態の電磁波検出素子の電圧電流特性の一例を示すグラフである。It is a graph which shows an example of the voltage-current characteristic of the electromagnetic wave detection element of 1st Embodiment. 第１実施形態の電磁波検出素子における、印加されるバイアス電圧と、電磁波の検出感度との関係の一例を示すグラフである。5 is a graph showing an example of the relationship between the applied bias voltage and the electromagnetic wave detection sensitivity in the electromagnetic wave detection element of the first embodiment. 第１実施形態の電磁波検出装置のブロック図である。It is a block diagram of the electromagnetic wave detection device of the first embodiment. 第１実施形態のすべての電磁波検出素子に印加するバイアス電圧の決定動作のフロー図である。FIG. 7 is a flow chart of a determination operation of a bias voltage applied to all the electromagnetic wave detection elements of the first embodiment. 図６のフロー図におけるステップＳ１００のフロー図である。It is a flowchart of step S100 in the flowchart of FIG. 図６のフロー図におけるステップＳ２００のフロー図である。It is a flowchart of step S200 in the flowchart of FIG. 第２実施形態の電磁波検出装置のブロック図である。It is a block diagram of an electromagnetic wave detection device of a 2nd embodiment.

≪概要≫
　以下、本発明の一例である第１実施形態、第２実施形態及び変形例について図面を参照しながら説明する。なお、参照するすべての図面では同様の機能を有する構成要素に同様の符号を付し、明細書では適宜説明を省略する。 << Overview >>
Hereinafter, a first embodiment, a second embodiment, and a modification which are examples of the present invention will be described with reference to the drawings. In all the referenced drawings, constituent elements having similar functions are designated by the same reference numerals, and the description thereof will not be repeated.

≪第１実施形態≫
　以下、第１実施形態について図面を参照しながら説明する。まず、本実施形態の電磁波検出システム１０（図１参照）の全体構成について説明する。次いで、本実施形態の電磁波検出システム１０による測定動作について説明する。次いで、本実施形態の要部（電磁波検出装置７０（図１及び図５参照））について説明する。次いで、本実施形態の効果について説明する。 «First embodiment»
Hereinafter, the first embodiment will be described with reference to the drawings. First, the overall configuration of the electromagnetic wave detection system 10 (see FIG. 1) of this embodiment will be described. Next, the measurement operation by the electromagnetic wave detection system 10 of this embodiment will be described. Next, a main part (electromagnetic wave detection device 70 (see FIGS. 1 and 5)) of the present embodiment will be described. Next, the effect of this embodiment will be described.

＜第１実施形態の全体構成＞
　図１は、本実施形態の電磁波検出システム１０の概略図である。
　本実施形態の電磁波検出システム１０は、電磁波送受信部２０と、制御部３０と、バイアス電圧生成部４０と、信号増幅部５０と、温度計６０（温度測定部の一例）とを備えている。電磁波検出システム１０は、一例として、測定対象物ＭＯに電磁波を照射し、測定対象物ＭＯを反射した電磁波を検出して、測定対象物ＭＯの形状等を測定する機能を有する。 <Overall configuration of the first embodiment>
FIG. 1 is a schematic diagram of an electromagnetic wave detection system 10 of this embodiment.
The electromagnetic wave detection system 10 of the present embodiment includes an electromagnetic wave transmission / reception unit 20, a control unit 30, a bias voltage generation unit 40, a signal amplification unit 50, and a thermometer 60 (an example of a temperature measurement unit). The electromagnetic wave detection system 10 has, for example, a function of irradiating the measurement object MO with electromagnetic waves, detecting the electromagnetic waves reflected by the measurement object MO, and measuring the shape and the like of the measurement object MO.

　電磁波送受信部２０は、発生部２１（電磁波発生装置の一例）と、コリメートレンズ２２と、ビームスプリッタ２３と、対物レンズ２４と、集光レンズ２５と、検出部２６とを備えている。発生部２１は、電磁波発生部２１Ａと、ホーンアンテナ２１Ｂとを有している。また、検出部２６は、電磁波検出部２６Ａと、ホーンアンテナ２６Ｂとを有している。 The electromagnetic wave transmission / reception unit 20 includes a generation unit 21 (an example of an electromagnetic wave generation device), a collimator lens 22, a beam splitter 23, an objective lens 24, a condenser lens 25, and a detection unit 26. The generator 21 has an electromagnetic wave generator 21A and a horn antenna 21B. Further, the detection unit 26 has an electromagnetic wave detection unit 26A and a horn antenna 26B.

　ここで、図１に示されるように、発生部２１と、コリメートレンズ２２と、ビームスプリッタ２３とは、直線状に並べられた状態で配置されている。本実施形態では、これらの並び方向をＸ方向と定義する。これに対して、ビームスプリッタ２３と、集光レンズ２５と、検出部２６とは、Ｘ方向と直交する方向に沿って直線状に並べられた状態で配置されている。本実施形態では、これらの並び方向をＹ方向と定義する。また、Ｘ方向及びＹ方向に直交する方向をＺ方向と定義する。 Here, as shown in FIG. 1, the generating unit 21, the collimating lens 22, and the beam splitter 23 are arranged in a linear arrangement. In the present embodiment, these arrangement directions are defined as the X direction. On the other hand, the beam splitter 23, the condenser lens 25, and the detection unit 26 are arranged in a state of being linearly arranged along the direction orthogonal to the X direction. In the present embodiment, these arrangement directions are defined as the Y direction. Further, a direction orthogonal to the X direction and the Y direction is defined as the Z direction.

　なお、本実施形態では、検出部２６と、制御部３０と、バイアス電圧生成部４０と、信号増幅部５０とで構成される組合せを、電磁波検出装置７０（図１参照）と定義する。 In the present embodiment, the combination of the detection unit 26, the control unit 30, the bias voltage generation unit 40, and the signal amplification unit 50 is defined as the electromagnetic wave detection device 70 (see FIG. 1).

　電磁波発生部２１Ａは、一例として、Ｚ方向に沿う長尺な基板（図示省略）と、複数の電磁波発生素子（図示省略）とを有している。複数の電磁波発生素子は、Ｚ方向に沿って基板の一端側から他端側に亘って並べられた状態で配置されている。なお、電磁波発生部２１Ａが有する複数の電磁波発生素子は、一例として、テラヘルツ波を発生させるＲＴＤとされている。 The electromagnetic wave generation unit 21A has, for example, a long substrate (not shown) along the Z direction and a plurality of electromagnetic wave generation elements (not shown). The plurality of electromagnetic wave generation elements are arranged in a state of being arranged from one end side to the other end side of the substrate along the Z direction. The plurality of electromagnetic wave generation elements included in the electromagnetic wave generation unit 21A are, for example, RTDs that generate terahertz waves.

　ここで、テラヘルツ波とは、赤外線よりも短波長でミリ波よりも長波長の電磁波と言われている。テラヘルツ波は、光波及び電波の両方の性質を兼ね備えていた電磁波であり、例えば、布、紙、木、プラスチック、陶磁器等を透過し（又は透過し易く）、金属、水等は透過しない（又は透過し難い）という性質を有する。一般的に、テラヘルツ波の周波数は１ＴＨｚ前後（波長は３００μｍ前後に相当）の電磁波とも言われているが、その範囲について一般的に明確な定義はない。そこで、本明細書では、テラヘルツ波の波長の範囲を７０ＧＨｚ以上１０ＴＨｚ以下の範囲と定義する。なお、電磁波発生部２１Ａが有する複数の電磁波発生素子は、テラヘルツ波を発生させる素子であれば、ＲＴＤでなくてもよい。 Here, terahertz waves are said to be electromagnetic waves having a shorter wavelength than infrared rays and a longer wavelength than millimeter waves. Terahertz waves are electromagnetic waves that have both the properties of light waves and radio waves. For example, they pass through (or easily pass through) cloth, paper, wood, plastic, ceramics, etc., but do not pass through metal, water, etc. (or It is difficult to penetrate). It is generally said that the frequency of the terahertz wave is an electromagnetic wave having a frequency of about 1 THz (wavelength corresponds to about 300 μm), but its range is not generally defined clearly. Therefore, in this specification, the range of the wavelength of the terahertz wave is defined as a range of 70 GHz or more and 10 THz or less. Note that the plurality of electromagnetic wave generation elements included in the electromagnetic wave generation unit 21A may not be RTDs as long as they are elements that generate terahertz waves.

　本実施形態の電磁波検出システム１０におけるその他の構成の詳細については、後述する。以上が、本実施形態の全体構成についての説明である。 Details of other configurations in the electromagnetic wave detection system 10 of the present exemplary embodiment will be described later. The above is a description of the overall configuration of the present embodiment.

＜第１実施形態の電磁波検出システムによる測定動作＞
　次に、本実施形態の電磁波検出システム１０による測定対象物ＭＯの測定動作について図１を参照しながら説明する。
　最初に、測定者は、測定対象物ＭＯを定められた測定位置にセットする。次いで、測定者が電磁波検出システム１０の動作スイッチ（図示省略）をオンにすると、制御部３０は、制御部３０内の記憶部３２に記憶されている制御プログラムＣＰに従い、電磁波送受信部２０、バイアス電圧生成部４０及び信号増幅部５０の制御を開始する。そして、制御開始後の電磁波検出システム１０は、以下のように作動する。 <Measurement Operation by Electromagnetic Wave Detection System of First Embodiment>
Next, the measurement operation of the measurement object MO by the electromagnetic wave detection system 10 of the present embodiment will be described with reference to FIG.
First, the measurer sets the measurement object MO at the determined measurement position. Next, when the measurer turns on the operation switch (not shown) of the electromagnetic wave detection system 10, the control unit 30 follows the control program CP stored in the storage unit 32 in the control unit 30, and the electromagnetic wave transmission / reception unit 20 and the bias. Control of the voltage generator 40 and the signal amplifier 50 is started. After the control is started, the electromagnetic wave detection system 10 operates as follows.

　まず、制御部３０は、バイアス電圧生成部４０を制御して、電磁波発生部２１Ａ及び電磁波検出部２６Ａのそれぞれに印加されるバイアス電圧を生成する。その結果、発生部２１（の電磁波発生部２１Ａが有する複数の電磁波発生素子）は、一定の周波数で変調された電磁波（この場合はテラヘルツ波）を出射する。発生部２１から出射された電磁波は、コリメートレンズ２２、ビームスプリッタ２３及び対物レンズ２４を介して、測定対象物ＭＯに照射される。測定対象物ＭＯにより反射された電磁波は、対物レンズ２４、ビームスプリッタ２３及び集光レンズ２５を介して、検出部２６に入射する。その結果、検出部２６の電磁波検出部２６Ａは、測定対象物ＭＯが反射した電磁波を検出する。電磁波検出部２６Ａは、検出した電磁波に応じた受信信号を信号増幅部５０に出力する。信号増幅部５０は、電磁波検出部２６Ａから受信した受信信号を増幅して、制御部３０に出力する。そして、制御部３０は、信号増幅部５０から受信した受信信号に基づいてマッピングした像を生成し、測定対象物ＭＯの形状等を解析する。その結果、測定対象物ＭＯの形状等が測定されて、本実施形態の電磁波検出システム１０による測定動作が終了する。 First, the control unit 30 controls the bias voltage generation unit 40 to generate the bias voltage applied to each of the electromagnetic wave generation unit 21A and the electromagnetic wave detection unit 26A. As a result, the generation unit 21 (the plurality of electromagnetic wave generation elements included in the electromagnetic wave generation unit 21A) emits an electromagnetic wave (in this case, a terahertz wave) modulated at a constant frequency. The electromagnetic wave emitted from the generator 21 is applied to the measurement object MO via the collimator lens 22, the beam splitter 23, and the objective lens 24. The electromagnetic wave reflected by the measurement object MO enters the detection unit 26 via the objective lens 24, the beam splitter 23, and the condenser lens 25. As a result, the electromagnetic wave detection unit 26A of the detection unit 26 detects the electromagnetic wave reflected by the measurement object MO. The electromagnetic wave detection unit 26A outputs a received signal corresponding to the detected electromagnetic wave to the signal amplification unit 50. The signal amplification unit 50 amplifies the reception signal received from the electromagnetic wave detection unit 26A and outputs it to the control unit 30. Then, the control unit 30 generates a mapped image based on the reception signal received from the signal amplification unit 50, and analyzes the shape and the like of the measurement object MO. As a result, the shape or the like of the measurement object MO is measured, and the measurement operation by the electromagnetic wave detection system 10 of the present embodiment ends.

　以上が、本実施形態の電磁波検出システム１０による測定動作についての説明である。 The above is a description of the measurement operation by the electromagnetic wave detection system 10 of the present embodiment.

＜第１実施形態の要部（電磁波検出装置）＞
　次に、本実施形態の要部である電磁波検出装置７０について図面を参照しながら説明する。まず、本実施形態の電磁波検出装置７０の具体的な構成について説明する。次いで、本実施形態の電磁波検出装置７０におけるバイアス電圧の決定動作について説明する。 <Main part of the first embodiment (electromagnetic wave detection device)>
Next, the electromagnetic wave detection device 70, which is the main part of this embodiment, will be described with reference to the drawings. First, a specific configuration of the electromagnetic wave detection device 70 of this embodiment will be described. Next, the operation of determining the bias voltage in the electromagnetic wave detection device 70 of this embodiment will be described.

〔第１実施形態の電磁波検出装置の構成〕
　本実施形態の電磁波検出装置７０は、図１に示されるように、検出部２６と、制御部３０と、バイアス電圧生成部４０と、信号増幅部５０と、温度計６０（温度測定部の一例）とを備えている。また、電磁波検出装置７０は、図５に示されるように、複数のバイアス・ティＢＴを備えている。 [Configuration of Electromagnetic Wave Detection Device of First Embodiment]
As shown in FIG. 1, the electromagnetic wave detection device 70 of the present exemplary embodiment includes a detection unit 26, a control unit 30, a bias voltage generation unit 40, a signal amplification unit 50, and a thermometer 60 (an example of a temperature measurement unit. ) And. Moreover, the electromagnetic wave detection device 70 includes a plurality of bias BTs as shown in FIG.

（検出部）
　検出部２６は、前述のとおり、電磁波検出部２６Ａを有している。電磁波検出部２６Ａは、図２に示されるように、基板２６Ａ１と、複数の電磁波検出素子２６Ａ２とを有している。基板２６Ａ１は、一例として、長尺とされ、その長手方向をＺ方向に沿わせつつその厚み方向をＹ方向に向けた状態で配置されている。基板２６Ａ１は、複数の電磁波検出素子２６Ａ２を実装するため及びバイアス電圧生成部４０の出力端子（図示省略）を接合するための配線パターンが形成された、いわゆるプリント配線基板とされている。複数の電磁波検出素子２６Ａ２は、基板２６Ａ１のビームスプリッタ２３側を向く面に、Ｚ方向に沿うライン状に並べられて列をなした状態で実装されている。
　なお、本実施形態における複数の電磁波検出素子２６Ａ２は、一例として、テラヘルツ波を発生させるＲＴＤとされている。 (Detection unit)
The detection unit 26 has the electromagnetic wave detection unit 26A as described above. As shown in FIG. 2, the electromagnetic wave detection unit 26A has a substrate 26A1 and a plurality of electromagnetic wave detection elements 26A2. The substrate 26A1 is, for example, long and is arranged with its longitudinal direction along the Z direction and its thickness direction oriented in the Y direction. The board 26A1 is a so-called printed wiring board on which a wiring pattern for mounting the plurality of electromagnetic wave detection elements 26A2 and for connecting an output terminal (not shown) of the bias voltage generation unit 40 is formed. The plurality of electromagnetic wave detection elements 26A2 are mounted in a line on the surface of the substrate 26A1 facing the beam splitter 23 side in a line along the Z direction.
The plurality of electromagnetic wave detection elements 26A2 in this embodiment are, for example, RTDs that generate terahertz waves.

　本実施形態の説明では、複数の電磁波検出素子２６Ａ２の数量Ｎを、一例として、２５個として説明する。また、複数の電磁波検出素子２６Ａ２のうちその列の中央の１個の電磁波検出素子を「特定素子２６Ｃ」（一の電磁波検出素子の一例）とし、特定素子２６Ｃ以外を「非特定素子２６Ｄ」（他の少なくとも１つの電磁波検出素子の一例）という。
　なお、本実施形態の説明では、便宜上、数量Ｎを２５個としたが、数量Ｎは２個以上、すなわち複数個であれば２５個でなくてもよい。ここで、数量Ｎが２個の場合、複数の電磁波検出素子２６Ａ２の列の中央の電磁波素子が存在しないことになるが、この場合は２個の電磁波検出素子２６Ａ２のうちの一方を特定素子２６Ｃ、他方を非特定素子２６Ｄとする。また、本実施形態の場合、特定素子２６Ｃは、複数の電磁波検出素子２６Ａ２の列の中央の１個の電磁波検出素子としたが、ここでいう「中央」とは並び順の一端及び他端から数えて同じ順番（本実施形態の場合は一端及び他端から１３番目）を意味する。ただし、中央でなく「中央側」であってもよい。ここでいう「中央側」とは、列の両端よりも中央に近い側を意味する。 In the description of the present embodiment, the number N of the plurality of electromagnetic wave detection elements 26A2 will be described as 25 as an example. Further, among the plurality of electromagnetic wave detecting elements 26A2, one electromagnetic wave detecting element at the center of the row is referred to as "specific element 26C" (an example of one electromagnetic wave detecting element), and other than the specific element 26C is referred to as "non-specific element 26D" ( Another example of at least one electromagnetic wave detection element).
In the description of the present embodiment, the number N is set to 25 for the sake of convenience, but the number N may be 2 or more, that is, 25 if it is plural. Here, when the number N is two, the electromagnetic wave element at the center of the row of the plurality of electromagnetic wave detection elements 26A2 does not exist. In this case, one of the two electromagnetic wave detection elements 26A2 is used as the specific element 26C. , And the other is the non-specific element 26D. Further, in the case of the present embodiment, the specific element 26C is one electromagnetic wave detecting element at the center of the row of the plurality of electromagnetic wave detecting elements 26A2, but the "center" here is defined from one end and the other end in the order of arrangement. It means the same order of counting (13th from one end and the other end in the case of this embodiment). However, it may be at the “center side” instead of the center. The "center side" here means the side closer to the center than both ends of the row.

　次に、電磁波検出素子２６Ａ２の電気的特性について図３及び図４を参照しながら説明する。ここで、図３は、本実施形態の各電磁波検出素子２６Ａ２の電圧電流特性の一例を示すグラフである。また、図４は、本実施形態の各電磁波検出素子２６Ａ２における、印加されるバイアス電圧と、電磁波の検出感度との関係の一例を示すグラフである。 Next, the electrical characteristics of the electromagnetic wave detection element 26A2 will be described with reference to FIGS. 3 and 4. Here, FIG. 3 is a graph showing an example of voltage-current characteristics of each electromagnetic wave detection element 26A2 of the present embodiment. FIG. 4 is a graph showing an example of the relationship between the applied bias voltage and the electromagnetic wave detection sensitivity in each electromagnetic wave detection element 26A2 of the present embodiment.

　前述のとおり、本実施形態の各電磁波検出素子２６Ａ２は一例としてＲＴＤとされている。ここで、ＲＴＤは、その動作領域の電流電圧特性に、微分負性抵抗特性を示す微分負性抵抗領域を有する（図３のグラフにおける点Ｂから点Ｃまでの範囲参照）。さらに、ＲＴＤは、微分負性抵抗領域付近で強い非線形特性を示す非線形領域を有する（図３のグラフにおける点Ａから点Ｂまでの範囲参照）。
　そして、ＲＴＤは、微分負性抵抗領域に相当するバイアス電圧が印加されている場合に、電磁波発生素子として機能する。これに対して、ＲＴＤは、非線形領域に相当するバイアス電圧が印加されている場合に、電磁波検出素子として機能する。 As described above, each electromagnetic wave detection element 26A2 of this embodiment is an RTD as an example. Here, the RTD has a differential negative resistance region showing a differential negative resistance characteristic in the current-voltage characteristic of its operation region (see the range from point B to point C in the graph of FIG. 3). Furthermore, the RTD has a non-linear region that exhibits strong non-linear characteristics near the differential negative resistance region (see the range from point A to point B in the graph of FIG. 3).
Then, the RTD functions as an electromagnetic wave generation element when a bias voltage corresponding to the differential negative resistance region is applied. On the other hand, the RTD functions as an electromagnetic wave detection element when a bias voltage corresponding to a non-linear region is applied.

　図３のグラフに示されるように、非線形領域は、比較的狭い範囲である。そのため、ＲＴＤを電磁波検出素子として安定して動作させるためには、高精度にバイアス電圧を制御する必要がある。 As shown in the graph of Fig. 3, the non-linear region is a relatively narrow range. Therefore, in order to stably operate the RTD as an electromagnetic wave detection element, it is necessary to control the bias voltage with high accuracy.

　次に、ＲＴＤを電磁波検出素子として機能させる場合の電磁波の検出感度について、図４を参照しながら説明する。ここで、図４のグラフにおける点Ａ及び点Ｂは、それぞれ、図３のグラフにおける点Ａ及び点Ｂに対応する。 Next, the detection sensitivity of electromagnetic waves when the RTD functions as an electromagnetic wave detection element will be described with reference to FIG. Here, points A and B in the graph of FIG. 4 correspond to points A and B in the graph of FIG. 3, respectively.

　図４のグラフに示されるように、ＲＴＤによる電磁波の検出感度は、点Ａから点Ｂまでの範囲において、バイアス電圧が大きいほど高い。しかしながら、バイアス電圧が、点Ｂに相当する電圧、すなわち、検出感度が最大となる電圧を超えると、ＲＴＤの検出感度は急激に低くなる。そのため、ＲＴＤは、点Ｂに相当する電圧よりも大きいバイアス電圧が印加されている状態では、テラヘルツ波を検出可能な電磁波検出素子として機能しない。 As shown in the graph of FIG. 4, the detection sensitivity of the electromagnetic wave by the RTD is higher as the bias voltage is higher in the range from point A to point B. However, when the bias voltage exceeds the voltage corresponding to the point B, that is, the voltage at which the detection sensitivity becomes maximum, the RTD detection sensitivity sharply decreases. Therefore, the RTD does not function as an electromagnetic wave detection element capable of detecting a terahertz wave when a bias voltage higher than the voltage corresponding to the point B is applied.

　以上のとおりであるから、ＲＴＤを電磁波検出素子として機能させるためには、印加されるバイアス電圧を点Ａから点Ｂまでの範囲（図４のグラフにおける、検出動作範囲を参照）とする必要がある。この場合、点Ｂに相当するバイアス電圧をＲＴＤに印加すれば、電磁波検出素子としてのＲＴＤによる電磁波の検出感度を最大感度にすることができる。ただし、本実施形態では、点Ａよりも大きく且つ点Ｂよりも小さい範囲であって点Ａよりも点Ｂに近い範囲（図４のグラフにおける点Ｄから点Ｅまでの範囲参照）を良好動作範囲とし、この範囲の電圧の中央値がバイアス電圧に設定される。このようにした理由は、電磁波の検出感度と、電磁波の検出動作の安定性とのバランスを図るためである。 As described above, in order for the RTD to function as an electromagnetic wave detection element, the applied bias voltage needs to be in the range from point A to point B (see the detection operation range in the graph of FIG. 4). is there. In this case, if the bias voltage corresponding to the point B is applied to the RTD, the detection sensitivity of the electromagnetic wave by the RTD as the electromagnetic wave detection element can be maximized. However, in the present embodiment, good operation is performed in a range larger than the point A and smaller than the point B and closer to the point B than the point A (see the range from the point D to the point E in the graph of FIG. 4). The range is set, and the median value of the voltage in this range is set as the bias voltage. The reason for doing this is to balance the detection sensitivity of the electromagnetic wave and the stability of the electromagnetic wave detection operation.

　以上が、電磁波検出素子２６Ａ２の電気的特性についての説明である。 The above is a description of the electrical characteristics of the electromagnetic wave detection element 26A2.

（制御部、バイアス電圧生成部、バイアス・ティ部及び信号増幅部）
　次に、制御部３０、バイアス電圧生成部４０及び信号増幅部５０の具体的な構成について特に図５を参照しながら説明する。図５は、本実施形態の電磁波検出装置７０のブロック図である。 (Control unit, bias voltage generation unit, bias tee unit and signal amplification unit)
Next, specific configurations of the control unit 30, the bias voltage generation unit 40, and the signal amplification unit 50 will be described with particular reference to FIG. FIG. 5 is a block diagram of the electromagnetic wave detection device 70 of this embodiment.

　図５に示されるように、バイアス電圧生成部４０は、複数の電磁波検出素子２６Ａ２の数量Ｎ（本実施形態では一例として２５個）に相当する数量の個別生成部で構成されている。ここで、複数の個別生成部を、個別生成部４０Ｃ（一の電磁波検出素子の一例）と、複数（本実施形態の場合は２４個）の個別生成部４０Ｄとする。ここで、個別生成部４０Ｃ及び複数の個別生成部４０Ｄの組合せは、複数の電圧印加部の一例である。個別生成部４０Ｃ（一の電磁波検出素子にバイアス電圧を印加する電圧印加部の一例）は、複数の電磁波検出素子２６Ａ２のうち特定素子２６Ｃに印加するバイアス電圧を生成する機能を有する。これに対して、複数の個別生成部４０Ｄは、それぞれ、複数の非特定素子２６Ｄに印加するバイアス電圧を生成する機能を有する。 As shown in FIG. 5, the bias voltage generation unit 40 is composed of individual generation units of the number corresponding to the number N (25 in this embodiment as an example) of the plurality of electromagnetic wave detection elements 26A2. Here, the plurality of individual generation units are an individual generation unit 40C (an example of one electromagnetic wave detection element) and a plurality (24 in the present embodiment) of individual generation units 40D. Here, the combination of the individual generation unit 40C and the plurality of individual generation units 40D is an example of the plurality of voltage application units. The individual generation unit 40C (an example of a voltage application unit that applies a bias voltage to one electromagnetic wave detection element) has a function of generating a bias voltage applied to the specific element 26C of the plurality of electromagnetic wave detection elements 26A2. On the other hand, each of the plurality of individual generation units 40D has a function of generating a bias voltage applied to each of the plurality of non-specific elements 26D.

　個別生成部４０Ｃと特定素子２６Ｃとの間には、複数（本実施形態の場合は２５個）のバイアス・ティＢＴのうちの１つのバイアス・ティＢＴが配置されている。そして、個別生成部４０Ｃが生成したバイアス電圧は、このバイアス・ティＢＴを介して特定素子２６Ｃに印加されるようになっている。また、複数の個別生成部４０Ｄと複数の非特定素子２６Ｄとの間には、それぞれ、１個のバイアス・ティＢＴが配置されている。各個別生成部４０Ｄが生成したバイアス電圧は、各バイアス・ティＢＴを介して各非特定素子２６Ｄに印加されるようになっている。
　ここで、各電磁波検出素子２６Ａ２に印加されるバイアス電圧は直流電圧とされている。これに対して、各電磁波検出素子２６Ａ２から出力される受信信号は交流信号（交流電圧）とされている。そして、各電磁波検出素子２６Ａ２と各バイアス・ティＢＴとの間では、バイアス電圧に起因する直流成分と、受信信号に起因する交流成分とが合成されるようになっている。なお、各バイアス・ティＢＴでは、受信信号に起因する交流成分のみが抜き出され、この抜き出された交流成分は受信信号として各信号増幅部５０に入力されるようになっている。 Between the individual generation unit 40C and the specific element 26C, one bias tee BT among a plurality of (25 in the present embodiment) bias BTs is arranged. The bias voltage generated by the individual generation unit 40C is applied to the specific element 26C via the bias BT. Further, one bias tee BT is arranged between each of the plurality of individual generation units 40D and each of the plurality of non-specific elements 26D. The bias voltage generated by each individual generation unit 40D is applied to each non-specific element 26D via each bias BT.
Here, the bias voltage applied to each electromagnetic wave detection element 26A2 is a DC voltage. On the other hand, the reception signal output from each electromagnetic wave detection element 26A2 is an AC signal (AC voltage). Then, between each electromagnetic wave detection element 26A2 and each bias BT, a direct current component caused by the bias voltage and an alternating current component caused by the received signal are combined. In each bias BT, only the AC component caused by the received signal is extracted, and the extracted AC component is input to each signal amplification unit 50 as a received signal.

　信号増幅部５０は、複数の個別増幅部５０Ａで構成されている。各個別増幅部５０Ａは、各バイアス・ティＢＴと制御部３０との間に配置され、各バイアス・ティＢＴと制御部３０とを電気的に接続させている。 The signal amplification section 50 is composed of a plurality of individual amplification sections 50A. Each individual amplification unit 50A is arranged between each bias BT and the control unit 30, and electrically connects each bias BT and the control unit 30.

　制御部３０の記憶部３２には、複数の電磁波検出素子２６Ａ２（特定素子２６Ｃ及び複数の非特定素子２６Ｄ）の電気的特性に関するデータが予め記憶されている。ここで、当該データとは、各電磁波検出素子２６Ａ２に印加されるバイアス電圧の相関関係に関するデータである。具体的には、当該データは、複数の電磁波検出素子２６Ａ２（特定素子２６Ｃ及び複数の非特定素子２６Ｄ）のそれぞれに印加されるバイアス電圧の基準値の相関関係に関する。ここで、各電磁波検出素子２６Ａ２のバイアス電圧の基準値とは、定められた条件（例えば装置本体内の温度等）のもと、各電磁波検出素子２６Ａ２が電磁波を検出する際に印加されるバイアス電圧の値を意味する。そして、後述する理由により、各電磁波検出素子２６Ａ２の基準値は、それぞれ異なる。 The storage unit 32 of the control unit 30 stores in advance data regarding the electrical characteristics of the plurality of electromagnetic wave detection elements 26A2 (the specific element 26C and the plurality of non-specific elements 26D). Here, the said data are data regarding the correlation of the bias voltage applied to each electromagnetic wave detection element 26A2. Specifically, the data relates to the correlation of the reference value of the bias voltage applied to each of the plurality of electromagnetic wave detection elements 26A2 (the specific element 26C and the plurality of non-specific elements 26D). Here, the reference value of the bias voltage of each electromagnetic wave detection element 26A2 is a bias applied when each electromagnetic wave detection element 26A2 detects an electromagnetic wave under a predetermined condition (for example, the temperature in the main body of the apparatus). It means the value of voltage. The reference values of the respective electromagnetic wave detection elements 26A2 are different due to the reasons described later.

　ところで、各電磁波検出素子２６Ａ２は、それぞれ、製造ばらつき等により電気的特性もばらついてしまう。そのため、各電磁波検出素子２６Ａ２に対して同等の条件（温度等等の条件）下で電圧を印加した場合、図３及び図４に示される各グラフの形状が若干ずれる。すなわち、各電磁波検出素子２６Ａ２に対して図３及び図４に示される各グラフを作成すると、図３のグラフの非線形領域となる電圧の範囲、及び、図４のグラフの良好動作領域となる電圧の範囲がそれぞれ微妙に異なる。 By the way, the electric characteristics of each electromagnetic wave detection element 26A2 also vary due to manufacturing variations and the like. Therefore, when a voltage is applied to each electromagnetic wave detection element 26A2 under equivalent conditions (conditions such as temperature), the shapes of the graphs shown in FIGS. 3 and 4 are slightly displaced. That is, when the graphs shown in FIGS. 3 and 4 are created for each electromagnetic wave detection element 26A2, the voltage range that is the non-linear region of the graph of FIG. 3 and the voltage that is the good operating region of the graph of FIG. The ranges are slightly different.

（温度計）
　温度計６０は、電磁波検出装置７０の装置本体内、別言すれば、電磁波検出システム１０の装置本体内の温度を測定する機能を有する。温度計６０は、制御部３０と通信可能とされている。そのため、温度計６０が温度を測定すると、その温度に関する情報は制御部３０に送信されるようになっている。温度計６０による装置本体内の温度の測定の技術的意味については、本実施形態の電磁波検出装置７０によるバイアス電圧の決定動作の中で説明する。 (thermometer)
The thermometer 60 has a function of measuring the temperature inside the device body of the electromagnetic wave detection device 70, in other words, inside the device body of the electromagnetic wave detection system 10. The thermometer 60 can communicate with the control unit 30. Therefore, when the thermometer 60 measures the temperature, information about the temperature is transmitted to the control unit 30. The technical meaning of measuring the temperature inside the apparatus main body by the thermometer 60 will be described in the operation of determining the bias voltage by the electromagnetic wave detection apparatus 70 of the present embodiment.

　以上が、本実施形態の電磁波検出装置７０の具体的な構成についての説明である。 The above is the description of the specific configuration of the electromagnetic wave detection device 70 of the present embodiment.

〔第１実施形態の電磁波検出装置によるバイアス電圧の決定動作〕
　次に、本実施形態の電磁波検出装置７０によるバイアス電圧の決定動作について、主に図６、図７及び図８を参照しながら説明する。ここで、図６は、本実施形態のすべての電磁波検出素子２６Ａ２（特定素子２６Ｃ及びすべての非特定素子２６Ｄ）に印加するバイアス電圧の決定動作のフロー図である。図７は、図６のフロー図におけるステップＳ１００のフロー図である。図８は、図６のフロー図におけるステップＳ２００のフロー図である。 [Bias Voltage Determining Operation by Electromagnetic Wave Detector of First Embodiment]
Next, the operation of determining the bias voltage by the electromagnetic wave detection device 70 of the present embodiment will be described mainly with reference to FIGS. 6, 7 and 8. Here, FIG. 6 is a flowchart of the operation of determining the bias voltage applied to all the electromagnetic wave detection elements 26A2 (specific element 26C and all non-specific elements 26D) of the present embodiment. FIG. 7 is a flowchart of step S100 in the flowchart of FIG. FIG. 8 is a flowchart of step S200 in the flowchart of FIG.

　本実施形態のバイアス電圧の決定動作は、一例として、温度計６０が予め定められた温度を測定した時に行われる。なお、このタイミングは、一例として、電磁波検出装置７０の動作時以外とされている。また、予め定められた温度は、１つの水準の温度でも複数の水準の温度でもよい。 The determination operation of the bias voltage of the present embodiment is performed, for example, when the thermometer 60 measures a predetermined temperature. Note that this timing is, for example, other than when the electromagnetic wave detection device 70 is operating. Further, the predetermined temperature may be one level of temperature or a plurality of levels of temperature.

　まず、温度計６０が予め定められた温度を測定し、その温度に関する情報を制御部３０に送信する。その結果、制御部３０は、バイアス電圧の決定動作を開始する（図６のフロー図における「スタート」）。 First, the thermometer 60 measures a predetermined temperature and sends information about the temperature to the control unit 30. As a result, the control unit 30 starts the bias voltage determination operation (“start” in the flowchart of FIG. 6).

　次いで、制御部３０は、図６に示されるように、制御部３０以外の電磁波検出装置７０にステップＳ１００及びステップＳ２００をこれらの記載順で実行させる。ここで、ステップＳ１００は、特定素子２６Ｃに印加されるバイアス電圧を決定するステップとされている（図７参照）。これに対して、ステップＳ２００は、ステップＳ１００の決定結果を用いて、すべての非特定素子２６Ｄのそれぞれに印加されるバイアス電圧を決定するステップとされている。 Next, as shown in FIG. 6, the control unit 30 causes the electromagnetic wave detection devices 70 other than the control unit 30 to execute steps S100 and S200 in the order described. Here, step S100 is a step of determining the bias voltage applied to the specific element 26C (see FIG. 7). On the other hand, step S200 is a step of determining the bias voltage applied to each of all the non-specific elements 26D using the determination result of step S100.

　ステップＳ１００は、図７に示されるフロー図のように実行される。以下の説明では、前提として、測定対象物ＭＯが前述の定められた測定位置（図１参照）にセットされているものとする。
　まず、制御部３０は、バイアス電圧生成部４０を用いて、発生部２１にバイアス電圧を印加させ、発生部２１から電磁波を出射させる（図１参照）。これに伴い、発生部２１から出射した電磁波は、コリメートレンズ２２、ビームスプリッタ２３及び対物レンズ２４を介して、測定対象物ＭＯに照射される。さらに、測定対象物ＭＯにより反射された電磁波は、対物レンズ２４、ビームスプリッタ２３及び集光レンズ２５を介して、検出部２６に入射する。以下の説明では、ステップＳ１００の終了まで、発生部２１から電磁波が出射されているものとする。 Step S100 is executed as in the flow chart shown in FIG. In the following description, as a premise, it is assumed that the measurement object MO is set at the above-mentioned determined measurement position (see FIG. 1).
First, the control unit 30 uses the bias voltage generation unit 40 to apply a bias voltage to the generation unit 21 and cause the generation unit 21 to emit an electromagnetic wave (see FIG. 1). Along with this, the electromagnetic wave emitted from the generation unit 21 is applied to the measurement object MO via the collimator lens 22, the beam splitter 23, and the objective lens 24. Further, the electromagnetic wave reflected by the measurement object MO enters the detection unit 26 via the objective lens 24, the beam splitter 23, and the condenser lens 25. In the following description, it is assumed that the generator 21 emits electromagnetic waves until the end of step S100.

　次いで、制御部３０は、特定素子２６Ｃに印加されるバイアス電圧を初期化するように、個別生成部４０Ｃ（図５参照）を制御する（ステップＳ１０１）。 Next, the control unit 30 controls the individual generation unit 40C (see FIG. 5) so as to initialize the bias voltage applied to the specific element 26C (step S101).

　次いで、制御部３０は、特定素子２６Ｃに印加されるバイアス電圧を、現在値から所定値ΔＶ１だけ増加するように、個別生成部４０Ｃを制御する（ステップＳ１０２）。この場合、制御部３０は、特定素子２６Ｃから出力された受信信号を、バイアス・ティＢＴ及び個別増幅部５０Ａを介して受信し、受信信号の信号振幅を検出する（ステップＳ１０３）。 Next, the control unit 30 controls the individual generation unit 40C so as to increase the bias voltage applied to the specific element 26C by the predetermined value ΔV1 from the current value (step S102). In this case, the control unit 30 receives the reception signal output from the specific element 26C via the bias BT and the individual amplification unit 50A, and detects the signal amplitude of the reception signal (step S103).

　次いで、制御部３０は、前回検出された信号振幅と今回検出された信号振幅とを比較して、信号振幅が小さくなったか否かを判定する（ステップＳ１０４）。信号振幅は、特定素子２６Ｃの検出感度に相当する。ここで、図４のグラフに示されるように、バイアス電圧を、低電圧側から高電圧側へ変化させた場合、検出感度が最大となる電圧（点Ｂでの電圧）を超えるまでは検出感度は単調に増加し、検出感度が最大となる電圧を超えると検出感度は急激に減少する。 Next, the control unit 30 compares the previously detected signal amplitude with the currently detected signal amplitude and determines whether or not the signal amplitude has decreased (step S104). The signal amplitude corresponds to the detection sensitivity of the specific element 26C. Here, as shown in the graph of FIG. 4, when the bias voltage is changed from the low voltage side to the high voltage side, the detection sensitivity is increased until the detection sensitivity exceeds the maximum voltage (voltage at point B). Increases monotonically, and the detection sensitivity sharply decreases when the voltage exceeds the maximum detection sensitivity.

　次いで、制御部３０は、信号振幅が小さくなったと判定した場合（ステップＳ１０４のＹｅｓ、すなわち肯定判断）、バイアス電圧が現在値から所定値ΔＶ２（＞ΔＶ１）分小さくなるように、個別生成部４０Ｃを制御する（ステップＳ１０５）。その結果、制御部３０は、ステップＳ１０５で求めた電圧を、特定素子２６Ｃに印加されるバイアス電圧として決定する。なお、制御部３０が信号振幅が小さくなっていないと判定した場合（ステップＳ１０４のＮｏ、すなわち否定判断）は、再度ステップＳ１０２が実行される。
　以上のようにして、ステップＳ１００では、特定素子２６Ｃのバイアス電圧が決定される。なお、ステップＳ１００について別の見方をすると、ステップＳ１００では、特定素子２６Ｃにおける、バイアス電圧と、電磁波検出感度との関係を特定するステップともいえる。 Next, when the control unit 30 determines that the signal amplitude has decreased (Yes in step S104, that is, a positive determination), the individual generation unit 40C decreases the bias voltage from the current value by the predetermined value ΔV2 (> ΔV1). Is controlled (step S105). As a result, the control unit 30 determines the voltage obtained in step S105 as the bias voltage applied to the specific element 26C. If the control unit 30 determines that the signal amplitude is not small (No in step S104, that is, negative determination), step S102 is executed again.
As described above, in step S100, the bias voltage of the specific element 26C is determined. From another perspective of step S100, it can be said that step S100 is a step of identifying the relationship between the bias voltage and the electromagnetic wave detection sensitivity in the identifying element 26C.

　次に、ステップＳ２００について図８のフロー図を参照しながら説明する。制御部３０は、ステップＳ２００において、ステップＳ１００の決定結果を用いて、すべての非特定素子２６Ｄのそれぞれに印加されるバイアス電圧を決定する。具体的には、以下のとおりである。 Next, step S200 will be described with reference to the flowchart of FIG. In step S200, the control unit 30 determines the bias voltage applied to each of all the non-specific elements 26D by using the determination result of step S100. Specifically, it is as follows.

　まず、制御部３０は、決定された特定素子２４Ｃに印加されるバイアス電圧と特定素子２４Ｃのバイアス電圧の基準値との差ΔＶを算出する（ステップＳ２０１）。特定素子２４Ｃのバイアス電圧の基準値は、記憶部３２に記憶されている。 First, the control unit 30 calculates a difference ΔV between the determined bias voltage applied to the specific element 24C and the reference value of the bias voltage of the specific element 24C (step S201). The reference value of the bias voltage of the specific element 24C is stored in the storage unit 32.

　次いで、制御部３０は、Ｓ２０１で算出した差ΔＶ及び記憶部３２に記憶されているすべての非特定素子２６Ｄのバイアス電圧の基準値から、すべての非特定素子２６Ｄのそれぞれに印加されるバイアス電圧を決定する。具体的には、制御部３０は、差ΔＶの大きさに応じて、各非特定素子２６Ｄの基準値に差ΔＶに応じた補正値ΔＸを加算して、すべての非特定素子２６Ｄのバイアス電圧を決定する。この場合、補正値ΔＸは予め設定された値であるが、例えば、使用する電磁波検出素子２６Ａ２の電気的性質によっては、ΔＸがΔＶと同等であってもよいし、ΔＸがΔＶによって一義的に定まる関数の関係（ΔＸ＝ｆ（ΔＶ））を有していてもよい。また、関数の関係において、温度もパラメータとした関係（ΔＸ＝ｆ（ΔＶ、Ｔ）；Ｔは温度）としてもよい。本実施形態の場合は、温度もパラメータとしている。 Next, the control unit 30 uses the difference ΔV calculated in S201 and the reference value of the bias voltage of all the non-specific elements 26D stored in the storage unit 32 to apply the bias voltage to each of the non-specific elements 26D. To decide. Specifically, the control unit 30 adds the correction value ΔX corresponding to the difference ΔV to the reference value of each non-specific element 26D according to the magnitude of the difference ΔV, and the bias voltage of all the non-specific elements 26D. To decide. In this case, the correction value ΔX is a preset value, but ΔX may be equal to ΔV, or ΔX may be uniquely determined by ΔV depending on the electrical property of the electromagnetic wave detection element 26A2 used. It may have a function relationship (ΔX = f (ΔV)) that is determined. Further, in the function relation, the temperature may be a parameter (ΔX = f (ΔV, T); T is temperature). In the case of this embodiment, the temperature is also used as a parameter.

　そして、ステップＳ２００が終了するとすべての電磁波検出素子２６Ａ２（特定素子２６Ｃ及びすべての非特定素子２６Ｄ）のバイアス電圧が決定されて、本実施形態のバイアス電圧の決定動作が終了する。なお、当該決定動作の終了後に電磁波検出システム１０による測定対象物ＭＯの測定動作が行われる場合、各電磁波検出素子２６Ａ２には前述のバイアス電圧の決定動作により決定された各バイアス電圧が印加されて、測定動作が行われる。すなわち、本実施形態では、制御部３０は、バイアス電圧の決定動作を、電磁波が照射される測定対象物ＭＯ（対象物の一例）により反射される電磁波の検出動作の直前に行う。 Then, when step S200 ends, the bias voltages of all the electromagnetic wave detection elements 26A2 (specific element 26C and all non-specific elements 26D) are determined, and the bias voltage determination operation of the present embodiment ends. When the measurement operation of the measuring object MO by the electromagnetic wave detection system 10 is performed after the determination operation is completed, each bias voltage determined by the above-described bias voltage determination operation is applied to each electromagnetic wave detection element 26A2. , Measurement operation is performed. That is, in the present embodiment, the control unit 30 performs the bias voltage determination operation immediately before the detection operation of the electromagnetic wave reflected by the measurement object MO (an example of the object) irradiated with the electromagnetic wave.

　以上が、本実施形態の電磁波検出装置７０によるバイアス電圧の決定動作についての説明である。 The above is the description of the operation of determining the bias voltage by the electromagnetic wave detection device 70 of the present embodiment.

＜第１実施形態の効果＞
　次に、本実施形態の効果（第１～第３の効果）について図面を参照しながら説明する。 <Effects of First Embodiment>
Next, the effects (first to third effects) of the present embodiment will be described with reference to the drawings.

〔第１の効果〕
　第１の効果は、制御部３０が特定素子２６Ｃに印加されるバイアス電圧の決定結果を用いてすべての非特定素子２６Ｄのそれぞれに印加されるバイアス電圧を決定することの効果である。別言すると、第１の効果は、制御部３０が特定素子２６Ｃに印加されるバイアス電圧を決定し、各バイアス電圧の基準値と特定素子２６Ｃのバイアス電圧との関係からすべての非特定素子２６Ｄのそれぞれに印加されるバイアス電圧を決定することの効果である。
　例えば、すべての電磁波検出素子２６Ａ２（特定素子２６Ｃ及びすべての非特定素子２６Ｄ）に印加するバイアス電圧の決定をそれぞれ１個ずつ順番に行うと、バイアス電圧の決定動作にはこれらの数量分の時間が必要となる。
　これに対して、本実施形態の電磁波検出装置７０の場合、図６のバイアス電圧の決定動作のフロー図に示されるように、まず、特定素子２６Ｃに印加されるバイアス電圧を決定される。次いで、この決定に基づく決定結果を用いて、すべての非特定素子２６Ｄのそれぞれに印加されるバイアス電圧が決定される。
　したがって、本実施形態の電磁波検出装置７０によれば、すべての電磁波検出素子２６Ａ２に印加するバイアス電圧の決定をそれぞれ１個ずつ順番に行う形態に比べて、バイアス電圧の決定動作に要する時間を短くする。これに伴い、本実施形態の電磁波検出システム１０は、バイアス電圧の決定動作に要する時間が短くなった分、バイアス電圧の決定動作中に測定対象物ＭＯの測定動作を開始指令がなされた場合に、測定動作を早く開始することができる。
　なお、本効果は、電磁波検出素子がＲＴＤのような電気的特性（図３のグラフ参照）を有しない場合でも奏するが、特に、本実施形態の場合のように、電磁波検出素子２６Ａ２がＲＴＤの場合に有効といえる。 [First effect]
The first effect is that the control unit 30 determines the bias voltage applied to each of all the non-specific elements 26D by using the determination result of the bias voltage applied to the specific element 26C. In other words, the first effect is that the control unit 30 determines the bias voltage applied to the specific element 26C, and all the non-specific elements 26D are determined from the relationship between the reference value of each bias voltage and the bias voltage of the specific element 26C. Is the effect of determining the bias voltage applied to each of the.
For example, if the bias voltages to be applied to all the electromagnetic wave detection elements 26A2 (the specific elements 26C and all the non-specific elements 26D) are determined one by one in order, the operation for determining the bias voltage takes time corresponding to these numbers. Is required.
On the other hand, in the case of the electromagnetic wave detection device 70 of the present embodiment, as shown in the flow chart of the bias voltage determination operation of FIG. 6, first, the bias voltage applied to the specific element 26C is determined. Then, the determination result based on this determination is used to determine the bias voltage applied to each of all the non-specific elements 26D.
Therefore, according to the electromagnetic wave detection device 70 of the present embodiment, the time required for the bias voltage determination operation is shortened as compared with the mode in which the bias voltages applied to all the electromagnetic wave detection elements 26A2 are sequentially determined one by one. To do. Along with this, the electromagnetic wave detection system 10 of the present embodiment reduces the time required for the bias voltage determination operation when the command to start the measurement operation of the measurement target MO is issued during the bias voltage determination operation. , The measurement operation can be started earlier.
Note that this effect is achieved even when the electromagnetic wave detection element does not have electrical characteristics like the RTD (see the graph in FIG. 3), but in particular, as in the case of the present embodiment, the electromagnetic wave detection element 26A2 has the RTD. It can be said to be effective in some cases.

〔第２の効果〕
　第２の効果は、特定素子２６Ｃが複数の電磁波検出素子２６Ａ２で構成されるライン状に並べられている列の中央又は中央側に配置されていることの効果である。
　複数の電磁波検出素子２６Ａ２は、電磁波を検出する場合に、発生部２１の複数の電磁波発生素子から出射された電磁波を検出する。そして、検出部２６には複数の電磁波発生素子からの複数本の電磁波が重ね合わさった状態で到達することになる。この場合、ライン状に並べられている複数の電磁波検出素子２６Ａ２に到達する電磁波は、両端での強度が中央側よりも弱い。
　本実施形態の場合、特定素子２６Ｃが複数の電磁波検出素子２６Ａ２で構成されるライン状に並べられている列の中央又は中央側に配置されている（図２参照）。そのため、本実施形態の場合、特定素子２６Ｃが列の両端の一方に配置されている形態に比べて、強度の安定した電磁波が到達する。
　さらに、特定素子２６Ｃが列の中央に配置されている形態は、特定素子２６Ｃが列の両端の一方に配置されている形態に比べて、特定素子２６Ｃから最も離れた位置にある非特定素子２６Ｄとの距離を短くすることができる。特定素子２６Ｃと非特定素子２６Ｄの周囲温度は、互いに近い位置にあるほど差異を生じないので、特定素子２６Ｃと非特定素子２６Ｄの温度条件を最も近づけることができる。
　したがって、本実施形態の電磁波検出装置７０は、特定素子２６Ｃが列の両端の一方に配置されている形態に比べて、安定してバイアス電圧の決定動作を行うことができる。これに伴い、本実施形態の電磁波検出システム１０は、安定したバイアス電圧が設定され易いため、安定した測定動作を行うことができる。
　なお、本効果は、電磁波検出素子がＲＴＤのような電気的特性（図３のグラフ参照）を有しない場合でも奏するが、特に、本実施形態の場合のように、電磁波検出素子２６Ａ２がＲＴＤの場合に有効といえる。 [Second effect]
The second effect is the effect that the specific element 26C is arranged at the center or on the center side of the line arranged in a line formed by the plurality of electromagnetic wave detection elements 26A2.
The plurality of electromagnetic wave detection elements 26A2 detect the electromagnetic waves emitted from the plurality of electromagnetic wave generation elements of the generation unit 21 when detecting the electromagnetic waves. Then, the plurality of electromagnetic waves from the plurality of electromagnetic wave generation elements arrive at the detection unit 26 in a state of being superposed. In this case, the electromagnetic waves reaching the plurality of electromagnetic wave detection elements 26A2 arranged in a line have weaker intensity at both ends than at the center side.
In the case of the present embodiment, the specific element 26C is arranged in the center or on the center side of the line-shaped row composed of the plurality of electromagnetic wave detection elements 26A2 (see FIG. 2). Therefore, in the case of the present embodiment, electromagnetic waves having a stable intensity reach as compared with the form in which the specific element 26C is arranged at one of both ends of the row.
Further, the form in which the specific element 26C is arranged in the center of the column is larger than the form in which the specific element 26C is arranged at one of both ends of the column, the non-specific element 26D located farthest from the specific element 26C. The distance between and can be shortened. The ambient temperatures of the specific element 26C and the non-specific element 26D are not so different from each other that they are closer to each other, so that the temperature conditions of the specific element 26C and the non-specific element 26D can be closest to each other.
Therefore, the electromagnetic wave detection device 70 of the present embodiment can perform the bias voltage determination operation more stably than the configuration in which the specific element 26C is arranged at one of both ends of the row. Along with this, the electromagnetic wave detection system 10 of the present embodiment can easily set a stable bias voltage, and thus can perform a stable measurement operation.
Note that this effect is achieved even when the electromagnetic wave detection element does not have electrical characteristics like the RTD (see the graph in FIG. 3), but in particular, as in the case of the present embodiment, the electromagnetic wave detection element 26A2 has the RTD. It can be said to be effective in some cases.

〔第３の効果〕
　第３の効果は、温度計６０を備え、温度計６０が予め定められた温度を測定した場合にバイアス電圧の決定動作が行われることの効果である。
　例えば、温度計６０を備えていない形態の場合、装置本体内の温度変化によってバイアス電圧の決定動作を行うことができない。
　これに対して、本実施形態の電磁波検出装置７０は、温度計６０を備えており、温度計６０が予め定められた温度を測定した場合にバイアス電圧の決定動作を行う（図１参照）。
　したがって、本実施形態の電磁波検出装置７０によれば、装置本体内の温度変化に応じてバイアス電圧の決定動作を行うことができる。これに伴い、本実施形態の電磁波検出システム１０は、温度変化による電磁波検出素子２６Ａ２の電磁波検出精度のばらつきを低減させた測定対象物ＭＯの測定動作を行うことができる。
　なお、本効果は、電磁波検出素子がＲＴＤのような電気的特性（図３のグラフ参照）を有しない場合でも奏するが、特に、本実施形態の場合のように、電磁波検出素子２６Ａ２がＲＴＤの場合に有効といえる。 [Third effect]
A third effect is that the thermometer 60 is provided and the bias voltage determination operation is performed when the thermometer 60 measures a predetermined temperature.
For example, in the case where the thermometer 60 is not provided, the bias voltage determination operation cannot be performed due to the temperature change in the apparatus body.
On the other hand, the electromagnetic wave detection device 70 of the present embodiment includes the thermometer 60, and performs the bias voltage determination operation when the thermometer 60 measures a predetermined temperature (see FIG. 1).
Therefore, according to the electromagnetic wave detection device 70 of the present embodiment, the bias voltage determination operation can be performed according to the temperature change in the device body. Along with this, the electromagnetic wave detection system 10 of the present embodiment can perform the measurement operation of the measurement target MO in which the variation in the electromagnetic wave detection accuracy of the electromagnetic wave detection element 26A2 due to the temperature change is reduced.
Note that this effect is achieved even when the electromagnetic wave detection element does not have electrical characteristics like the RTD (see the graph in FIG. 3), but in particular, as in the case of the present embodiment, the electromagnetic wave detection element 26A2 has the RTD. It can be said to be effective in some cases.

　以上が、第１実施形態の効果についての説明である。そして、以上が、第１実施形態についての説明である。 The above is a description of the effects of the first embodiment. The above is the description of the first embodiment.

≪第２実施形態≫
　次に、第２実施形態について図９を参照しながら説明する。本実施形態については、第１実施形態と異なる部分についてのみ説明する。なお、本実施形態の説明において、第１実施形態と同じ構成要素等については同じ名称、符号等を用いることにする。 «Second embodiment»
Next, a second embodiment will be described with reference to FIG. In the present embodiment, only parts different from the first embodiment will be described. In the description of this embodiment, the same names and reference numerals will be used for the same components and the like as in the first embodiment.

　本実施形態の電磁波検出装置７０Ａ（電磁波検出システム１０Ａ）は、特定素子２６Ｃがバイアス電圧の決定動作を行う場合に必要な電磁波を発生させるための電磁波発生素子８０を備えている。本実施形態の場合、特定素子２６Ｃは、電磁波検出システム１０Ａによる測定対象物ＭＯの測定動作時には使用されない。以上が、本実施形態における第１実施形態と異なる点である。 The electromagnetic wave detection device 70A (electromagnetic wave detection system 10A) of this embodiment includes an electromagnetic wave generation element 80 for generating an electromagnetic wave required when the specific element 26C performs a bias voltage determination operation. In the case of the present embodiment, the specific element 26C is not used during the measurement operation of the measurement object MO by the electromagnetic wave detection system 10A. The above is the difference between the first embodiment and the first embodiment.

　本実施形態の場合、第１実施形態の場合と異なり、バイアス電圧の決定動作（図６及び図７参照）において、測定対象物ＭＯを定められた測定位置に配置する必要がない点で有効といえる。本実施形態のその他の効果は、第１実施形態の場合と同様である。 Unlike the case of the first embodiment, the present embodiment is effective in that it is not necessary to dispose the measurement object MO at a predetermined measurement position in the bias voltage determination operation (see FIGS. 6 and 7). I can say. The other effects of this embodiment are similar to those of the first embodiment.

　以上が、第２実施形態についての説明である。 The above is the description of the second embodiment.

　以上のとおり、本発明について第１実施形態及び第２実施形態を一例として説明したが、本発明はこれらの実施形態に限定されるものではない。本発明の技術的範囲には、例えば、下記のような形態（変形例）も含まれる。 As described above, the present invention has been described by taking the first embodiment and the second embodiment as examples, but the present invention is not limited to these embodiments. The technical scope of the present invention includes, for example, the following forms (modifications).

　例えば、第１実施形態の説明では、電磁波検出システム１０が、一例として、電磁波を用いて測定対象物ＭＯの形状等を測定する装置であるとした。しかしながら、特定素子２６Ｃに印加されるバイアス電圧の決定結果を用いてすべての非特定素子２６Ｄのそれぞれに印加されるバイアス電圧を決定する形態であれば、電磁波検出システムは測定対象物ＭＯの形状等を測定する装置でなくてもよい。例えば、各種センサー、トモグラフィその他のシステムであってもよい。以上の変形例は、第２実施形態にも適用できる。 For example, in the description of the first embodiment, the electromagnetic wave detection system 10 is, as an example, a device that measures the shape or the like of the measurement target MO using electromagnetic waves. However, if the bias voltage applied to each of all the non-specific elements 26D is determined by using the result of the determination of the bias voltage applied to the specific element 26C, the electromagnetic wave detection system may have a shape such as the shape of the measurement object MO. Does not have to be a device for measuring. For example, various sensors, tomography, and other systems may be used. The above modified example can also be applied to the second embodiment.

　例えば、第１実施形態の説明では、電磁波検出装置７０が温度計６０を備えており、温度計６０が予め定められた温度を測定した場合にバイアス電圧の決定動作が行われるとした。しかしながら、温度計６０に換えて湿度測定部（図示省略、ただし図１を援用）としてもよい。この場合、制御部３０は、湿度測定部が予め定められた湿度を測定した場合にバイアス電圧の決定動作を行うようにしてもよい。この変形例の場合、装置本体内の湿度変化に応じてバイアス電圧の決定動作を行うことができるという効果を奏する。
　なお、本変形例では、温度計６０に換えて湿度測定部とするとしたが、電磁波検出装置７０は、温度計６０を備えつつ湿度測定部を備えるようにしてもよい。この変形例の場合、装置本体内の温度変化及び湿度変化に応じてバイアス電圧の決定動作を行うことができるという効果を奏する。 For example, in the description of the first embodiment, the electromagnetic wave detection device 70 includes the thermometer 60, and the bias voltage determination operation is performed when the thermometer 60 measures a predetermined temperature. However, instead of the thermometer 60, a humidity measuring unit (not shown, but refer to FIG. 1) may be used. In this case, the control unit 30 may perform the bias voltage determination operation when the humidity measuring unit measures a predetermined humidity. In the case of this modified example, there is an effect that the operation of determining the bias voltage can be performed according to the humidity change in the apparatus main body.
In this modification, the thermometer 60 is used as the humidity measuring unit, but the electromagnetic wave detection device 70 may include the thermometer 60 and the humidity measuring unit. In the case of this modification, there is an effect that the bias voltage determination operation can be performed according to the temperature change and the humidity change in the apparatus main body.

　また、第１実施形態及び前述の変形例の場合、温度及び湿度の一方又は両方の変化に応じてバイアス電圧の決定動作を行うとした。しかしながら、バイアス電圧の決定動作の開始タイミングは、温度及び湿度の一方又は両方の変化によらなくてもよい。例えば、装置本体の電源投入時に行うようにしてもよい。また、例えば、電磁波検出装置７０が装置本体内に配置されている時計（計時部、図示省略、ただし図１を援用）を備え、バイアス電圧の決定動作を、時計が予め定められた時間を計測した時に行うようにしてもよい。 In addition, in the case of the first embodiment and the above-described modified example, the bias voltage determination operation is performed according to changes in one or both of temperature and humidity. However, the start timing of the bias voltage determination operation may not depend on changes in one or both of temperature and humidity. For example, it may be performed when the power of the apparatus main body is turned on. In addition, for example, the electromagnetic wave detection device 70 is provided with a clock (timer, not shown, but FIG. 1 is incorporated) arranged in the main body of the device, and the bias voltage determination operation is performed by the clock measuring a predetermined time. You may do it when you do.

　また、第１実施形態の説明では、特定素子２６Ｃは、ライン状に並べられている複数の電磁波検出素子２６Ａ２の列の中央に配置されているとした。しかしながら、特定素子２６Ｃは、列の中央又は中央側に配置されていなくてもよい。例えば、特定素子２６Ｃは列の両端の一方に配置されていてもよい。この変形例の場合、第１実施形態における第２の効果を奏することが困難となるが、第１実施形態における第１の効果を奏する。 In addition, in the description of the first embodiment, the specific element 26C is arranged in the center of the row of the plurality of electromagnetic wave detection elements 26A2 arranged in a line. However, the specific element 26C does not have to be arranged at the center or the center side of the row. For example, the specific element 26C may be arranged at one of both ends of the row. In the case of this modification, it is difficult to achieve the second effect of the first embodiment, but the first effect of the first embodiment is achieved.

　この出願は、２０１８年１０月３０日に出願された日本出願特願２０１８－２０３５９６号を基礎とする優先権を主張し、その開示の全てをここに取り込む。 This application claims priority based on Japanese Patent Application No. 2018-203596 filed on October 30, 2018, and incorporates all of the disclosure thereof.

１０  電磁波検出システム
１０Ａ  電磁波検出システム
２０  電磁波送受信部 
２１  発生部
２１Ａ  電磁波発生部
２１Ｂ  ホーンアンテナ
２２  コリメートレンズ
２３  ビームスプリッタ
２４  対物レンズ
２４Ｃ  特定素子
２５  集光レンズ
２６  検出部
２６Ａ  電磁波検出部
２６Ａ２ 電磁波検出素子
２６Ｂ  ホーンアンテナ 
２６Ｃ  特定素子（一の電磁波検出素子の一例）
２６Ｄ  非特定素子（少なくとも１つの電磁波検出素子の一例）
３０  制御部
３２  記憶部
４０  バイアス電圧生成部（電圧印加部の一例）
４０Ｃ  個別生成部
４０Ｄ  個別生成部
５０  信号増幅部
５０Ａ  個別増幅部
６０  温度計（温度測定部の一例）
７０  電磁波検出装置
７０Ａ  電磁波検出装置
８０  電磁波発生素子 
ＢＴ  バイアス・ティ
ＭＯ  測定対象物 10 Electromagnetic wave detection system 10A Electromagnetic wave detection system 20 Electromagnetic wave transmission / reception unit
21 generator 21A electromagnetic wave generator 21B horn antenna 22 collimator lens 23 beam splitter 24 objective lens 24C specific element 25 condensing lens 26 detector 26A electromagnetic wave detector 26A2 electromagnetic wave detector 26B horn antenna
26C specific element (an example of one electromagnetic wave detection element)
26D Non-specific element (an example of at least one electromagnetic wave detection element)
30 control section 32 storage section 40 bias voltage generation section (an example of voltage application section)
40C Individual generation unit 40D Individual generation unit 50 Signal amplification unit 50A Individual amplification unit 60 Thermometer (an example of temperature measurement unit)
70 Electromagnetic Wave Detection Device 70A Electromagnetic Wave Detection Device 80 Electromagnetic Wave Generation Element
BT Bias / Ty MO Measuring object

Claims (10)

　複数の電磁波検出素子と、
　前記複数の電磁波検出素子のそれぞれにバイアス電圧を印加する複数の電圧印加部と、
　前記複数の電圧印加部を制御する制御部と、
　を備え、
　前記制御部は、前記複数の電磁波検出素子のうちの一の電磁波検出素子に印加される前記バイアス電圧の決定結果を用いて他の少なくとも１つの電磁波検出素子のそれぞれに印加される前記バイアス電圧を決定する、
　電磁波検出装置。 A plurality of electromagnetic wave detection elements,
A plurality of voltage application units that apply a bias voltage to each of the plurality of electromagnetic wave detection elements,
A control unit for controlling the plurality of voltage application units,
Equipped with
The control unit uses the determination result of the bias voltage applied to one electromagnetic wave detection element of the plurality of electromagnetic wave detection elements to determine the bias voltage applied to each of at least one other electromagnetic wave detection element. decide,
Electromagnetic wave detection device. 　前記複数の電磁波検出素子のそれぞれに印加される前記バイアス電圧の基準値が予め記憶されている記憶部を備え、
　前記制御部は、
　　前記一の電磁波検出素子及び前記一の電磁波検出素子に前記バイアス電圧を印加する前記電圧印加部を用いて、前記バイアス電圧と電磁波検出感度との関係を特定し、
　　特定した前記関係から前記一の電磁波検出素子に印加される前記バイアス電圧を決定し、
　　決定された前記バイアス電圧と前記一の電磁波検出素子に印加される前記バイアス電圧の基準値との差、及び、前記他の少なくとも１つの電磁波検出素子のそれぞれに印加される前記バイアス電圧の基準値から、前記他の少なくとも１つの電磁波検出素子のそれぞれに印加される前記バイアス電圧を決定する、
　請求項１に記載の電磁波検出装置。 A storage unit in which a reference value of the bias voltage applied to each of the plurality of electromagnetic wave detection elements is stored in advance;
The control unit is
Using the voltage applying section that applies the bias voltage to the one electromagnetic wave detection element and the one electromagnetic wave detection element, the relationship between the bias voltage and the electromagnetic wave detection sensitivity is specified,
Determining the bias voltage applied to the one electromagnetic wave detection element from the specified relationship,
A difference between the determined bias voltage and a reference value of the bias voltage applied to the one electromagnetic wave detection element, and a reference value of the bias voltage applied to each of the at least one other electromagnetic wave detection element. To determine the bias voltage applied to each of the at least one other electromagnetic wave detection element,
The electromagnetic wave detection device according to claim 1. 　前記複数の電磁波検出素子は、ライン状に並べられて列をなし、
　前記一の電磁波検出素子は、前記列の中央又は中央側に配置されている、
　請求項１又は２に記載の電磁波検出装置。 The plurality of electromagnetic wave detection elements are arranged in a line to form a row,
The one electromagnetic wave detection element is arranged at the center or the center side of the row,
The electromagnetic wave detection device according to claim 1. 　前記制御部は、前記複数の電磁波検出素子のそれぞれに印加される前記バイアス電圧の決定動作を、電磁波が照射される対象物により反射される電磁波の検出動作の直前に行う、
　請求項１～３のいずれか１項に記載の電磁波検出装置。 The control unit performs an operation of determining the bias voltage applied to each of the plurality of electromagnetic wave detection elements immediately before an operation of detecting an electromagnetic wave reflected by an object irradiated with the electromagnetic wave,
The electromagnetic wave detection device according to any one of claims 1 to 3. 　前記制御部は、前記複数の電磁波検出素子のそれぞれに印加される前記バイアス電圧の決定動作を、装置本体の電源投入時に行う、
　請求項１～４のいずれか１項に記載の電磁波検出装置。 The control unit performs the operation of determining the bias voltage applied to each of the plurality of electromagnetic wave detection elements when the apparatus body is powered on.
The electromagnetic wave detection device according to any one of claims 1 to 4. 　時間を計測する計時部を備え、
　前記制御部は、前記複数の電磁波検出素子のそれぞれに印加される前記バイアス電圧の決定動作を、前記計時部が予め定められた時間を計測した時に行う、
　請求項１～５に記載の電磁波検出装置。 Equipped with a timekeeping unit that measures time,
The control unit performs the operation of determining the bias voltage applied to each of the plurality of electromagnetic wave detection elements when the time counting unit measures a predetermined time,
The electromagnetic wave detection device according to claim 1. 　装置本体内の温度を測定する温度測定部を備え、
　前記制御部は、前記複数の電磁波検出素子のそれぞれに印加される前記バイアス電圧の決定動作を、前記温度測定部が予め定められた温度を測定した時に行う、
　請求項１～６に記載の電磁波検出装置。 Equipped with a temperature measurement unit that measures the temperature inside the device body,
The control unit performs the operation of determining the bias voltage applied to each of the plurality of electromagnetic wave detection elements when the temperature measurement unit measures a predetermined temperature,
The electromagnetic wave detection device according to any one of claims 1 to 6. 　装置本体内の湿度を測定する湿度測定部を備え、
　前記制御部は、前記複数の電磁波検出素子のそれぞれに印加される前記バイアス電圧の決定動作を、前記湿度測定部が予め定められた湿度を測定した時に行う、
　請求項１～７に記載の電磁波検出装置。 Equipped with a humidity measurement unit that measures the humidity inside the device body,
The control unit performs the operation of determining the bias voltage applied to each of the plurality of electromagnetic wave detection elements, when the humidity measuring unit measures a predetermined humidity,
The electromagnetic wave detection device according to any one of claims 1 to 7. 　前記複数の電磁波検出素子は、共鳴トンネルダイオードとされている、
　請求項１～８のいずれか１項に記載の電磁波検出装置。 The plurality of electromagnetic wave detection elements is a resonant tunnel diode,
The electromagnetic wave detection device according to any one of claims 1 to 8. 　請求項１～９のいずれか１項に記載の電磁波検出装置と、
　前記複数の電磁波検出素子が検出する電磁波を発生させる電磁波発生装置と、
　を備える電磁波検出システム。 An electromagnetic wave detection device according to any one of claims 1 to 9,
An electromagnetic wave generation device for generating an electromagnetic wave detected by the plurality of electromagnetic wave detection elements,
An electromagnetic wave detection system including.
PCT/JP2019/042281 2018-10-30 2019-10-29 Electromagnetic-wave detecting device and electromagnetic-wave detecting system Ceased WO2020090784A1 (en)

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